Broadband microwave band wave absorber

Abstract

The invention discloses a broadband microwave band wave absorber, and relates to the technical field of wave absorbers, the broadband microwave band wave absorber comprises a microstructure unit layer, the microstructure unit layer comprises a basic structure, the periphery of the basic structure comprises a plurality of first triangular structures, the two sides of each first triangular structure extend outwards to form second triangular structures, and the second triangular structures extend outwards to form second triangular structures; a digging hole is formed in the middle of the foundation structure, a plurality of first triangular holes are formed in the periphery of the digging hole, second triangular holes are formed in the two side edges of each first triangular hole in an outward extending mode, and third triangular holes are formed in the two side edges of each second triangular hole in an outward extending mode. The two side edges of the first triangular hole extend outwards to form a fourth triangular hole and a fifth triangular hole, and the fourth triangular hole and the fifth triangular hole are located on the two sides of the second triangular hole respectively. Through the design of the microstructure unit layer, the wave absorber applying the microstructure unit layer has the broadband absorption characteristic and is high in absorption rate.

Description

Technical Field

[0001] The present invention relates to the technical field of absorbers, and in particular to a broadband microwave band absorber. Background Art

[0002] Electromagnetic waves in the microwave band (gigahertz band) have some special properties, which make them widely used and developed in the fields of communication and wireless technology, radar systems, radio astronomy, and medical imaging technology; the frequency range of the microwave band in the electromagnetic spectrum is usually 1 microwave to 30 microwaves, and the corresponding wavelength range is about 10 cm to 1 cm. In order to effectively control and utilize electromagnetic waves, metamaterial absorbers have become an important technical means.

[0003] Metamaterial absorbers utilize special structures and materials to convert the electromagnetic wave energy incident on their surfaces into other forms of energy and dissipate them, thereby achieving absorption and attenuation of electromagnetic waves. Currently, metamaterial absorbers known to the applicant often have multiple absorption peaks, but there are certain limitations on the absorption and attenuation of electromagnetic waves in a wide frequency band.

[0004] Therefore, people are in urgent need of a broadband microwave absorber with broadband absorption characteristics and high absorptivity. Summary of the invention

[0005] The object of the present invention is to provide a broadband microwave band absorber to solve the problems existing in the above-mentioned prior art. By designing the microstructure unit layer, the absorber has broadband absorption characteristics and high absorption rate.

[0006] To achieve the above-mentioned purpose, the present invention provides the following scheme: The present invention provides a broadband microwave band absorber, comprising a plurality of absorbing units, wherein the absorbing units include a microstructure unit layer that performs ohmic loss on electromagnetic waves, wherein the microstructure unit layer includes a base structure, wherein the periphery of the base structure includes a plurality of first triangular structures, and second triangular structures are provided on both sides of the first triangular structures extending outward, a hole is provided in the middle of the base structure, and the periphery of the hole includes a plurality of first triangular holes, and second triangular holes are provided on both sides of the first triangular holes extending outward, and third triangular holes are provided on both sides of the second triangular holes extending outward, and fourth triangular holes and fifth triangular holes are provided on both sides of the first triangular holes extending outward, and the fourth triangular holes and the fifth triangular holes are respectively located on both sides of the second triangular holes.

[0007] Preferably, the base structure is made of indium tin oxide.

[0008] Preferably, an octagonal structure is connected inside the hole.

[0009] Preferably, the thickness of the microstructure unit layer is 0.01 mm.

[0010] Preferably, the wave absorbing unit further comprises a dielectric layer for performing dielectric loss on electromagnetic waves, and the dielectric layer is bonded to the microstructure unit layer.

[0011] Preferably, the dielectric layer is made of quartz.

[0012] Preferably, the thickness of the dielectric layer is 3-5 mm.

[0013] Preferably, the wave absorbing unit further comprises a conductive reflective layer for reflecting electromagnetic waves, and the conductive reflective layer is laminated on a side of the dielectric layer away from the microstructure unit layer.

[0014] Preferably, the conductive reflective layer is made of copper.

[0015] Preferably, the thickness of the conductive reflective layer is 0.1-0.2 mm.

[0016] Compared with the prior art, the present invention mainly achieves the following technical effects:

[0017] By setting the peripheral shape of the basic structure of the microstructure unit layer and designing the internal holes, the absorber using it can maintain a high absorption rate in a wide-band microwave band, that is, the absorber using it has a wide-band absorption characteristic and a high absorption rate, and is suitable for applications in the fields of electromagnetic wave interference, shielding and isolation.

[0018] Compared with the prior art, other solutions of the present invention have achieved the following technical effects:

[0019] The method of digging holes and incorporating octagonal structures can improve absorption performance, increase duty cycle, and improve bandwidth. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0021] Figure 1 Schematic diagram of the structure of the microstructure unit layer of the broadband microwave absorber in an embodiment of the present invention;

[0022] Figure 2 Schematic diagram of arrangement of multiple absorbing units of a broadband microwave absorber in an embodiment of the present invention;

[0023] Figure 3A schematic diagram of the structure of a first triangular hole, a second triangular hole, a third triangular hole, a fourth triangular hole and a fifth triangular hole in an embodiment of the present invention;

[0024] Figure 4 is an absorption characteristic curve diagram of the broadband microwave band absorber in the microwave band in an embodiment of the present invention;

[0025] Among them, 1. absorbing unit; 2. microstructure unit layer; 3. basic structure; 4. first triangular structure; 5. second triangular structure; 6. digging holes; 7. first triangular holes; 8. second triangular holes; 9. third triangular holes; 10. fourth triangular holes; 11. fifth triangular holes; 12. octagonal structure; 13. dielectric layer. DETAILED DESCRIPTION

[0026] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0027] The purpose of the present invention is to provide a broadband microwave band absorber to solve the problems existing in the prior art. By designing the microstructure unit layer, the absorber has broadband absorption characteristics and high absorption rate.

[0028] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0029] like Figures 1 to 4As shown, a broadband microwave band absorber is provided, comprising a plurality of absorbing units 1, the plurality of absorbing units 1 are arranged in an array, the absorbing unit 1 comprises a microstructure unit layer 2 for performing ohmic loss on electromagnetic waves, the microstructure unit layer 2 comprises a base structure 3, the periphery of the base structure 3 comprises a plurality of first triangular structures 4, both sides of the first triangular structures 4 are provided with second triangular structures 5 extending outward, a hole 6 is provided in the middle of the base structure 3, the periphery of the hole 6 comprises a plurality of first triangular holes 7, both sides of the first triangular holes 7 are provided with second triangular holes 8 extending outward, and the second triangular holes 8 A third triangular hole 9 is extended outward on both sides of the first triangular hole 7, a fourth triangular hole 10 and a fifth triangular hole 11 are extended outward on both sides of the first triangular hole 7, and the fourth triangular hole 10 and the fifth triangular hole 11 are respectively located on both sides of the second triangular hole 8. By setting the peripheral shape of the basic structure 3 of the microstructure unit layer 2 and designing the internal holes 6, the absorber using it can maintain a high absorption rate in a wide-band microwave band, that is, the absorber using it has a wide-band absorption characteristic and a high absorption rate, and is suitable for applications in the fields of electromagnetic wave interference, shielding and isolation.

[0030] In this embodiment, the number of the first triangular structures 4 and the number of the first triangular holes 7 are both 6, and they are evenly arranged along the circumference.

[0031] In this embodiment, the sharp corners of adjacent first triangular structures 4 that are close to each other are overlapped, and the sharp corners of adjacent first triangular holes 7 that are close to each other are overlapped.

[0032] In this embodiment, the material of the basic structure 3 is indium tin oxide (ITO), specifically ITO with a resistivity of 100 ohms, and the period of the periodic structure is 10; in other embodiments, the material of the basic structure 3 can be other materials that can achieve ohmic loss of electromagnetic waves, such as copper.

[0033] The hole 6 is inscribed with an octagonal structure 12, which can improve the absorption performance, increase the duty cycle, and improve the bandwidth. In this embodiment, the inscribed structure is a regular octagonal structure.

[0034] The thickness of the microstructure unit layer 2 is 0.005-0.015 mm, and the specific value selected in this embodiment is 0.01 mm.

[0035] The wave absorbing unit 1 further includes a dielectric layer 13 for performing dielectric loss on electromagnetic waves, and the dielectric layer 13 is bonded to the microstructure unit layer 2 .

[0036] In this embodiment, the material of the dielectric layer 13 is quartz, specifically quartz with a dielectric constant of 3.5; in other embodiments, the material of the dielectric layer 13 can be other materials that can achieve dielectric loss of electromagnetic waves, such as polyimide.

[0037] The thickness of the dielectric layer 13 is 3-5 mm, and the specific value selected in this embodiment is 3.3583 mm.

[0038] The wave absorbing unit 1 further includes a conductive reflective layer for reflecting electromagnetic waves. The conductive reflective layer is laminated on a side of the dielectric layer 13 away from the microstructure unit layer 2 to improve the absorption rate of electromagnetic waves by reflecting electromagnetic waves.

[0039] In this embodiment, the conductive reflective layer is made of copper. In other embodiments, other materials that can conduct electricity and reflect electromagnetic waves, such as nickel, may also be used.

[0040] The thickness of the conductive reflective layer is 0.1-0.2 mm, and the specific value selected in this embodiment is 0.16 mm.

[0041] In this embodiment, a plurality of absorbing units 1 share a dielectric layer 13 and a conductive reflective layer.

[0042] The broadband microwave band absorber in this embodiment was simulated and tested using CST Microwave Studio. The results showed that within the microwave band range of 7.6-14.75, the absorber can achieve an absorption rate of more than 90%, which indicates that the absorber exhibits good absorption performance in a wide frequency range and is suitable for microwave band applications.

[0043] Adaptive changes made according to actual needs are all within the protection scope of the present invention.

[0044] It should be noted that it is obvious to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the present invention can be implemented in other specific forms without departing from the spirit or essential features of the present invention. Therefore, the embodiments should be regarded as exemplary and non-restrictive from any point of view, and the scope of the present invention is defined by the appended claims rather than the above description, and it is intended that all changes falling within the meaning and scope of the equivalent elements of the claims are included in the present invention. Any reference numerals in the claims should not be regarded as limiting the claims involved.

[0045] The present invention uses specific examples to illustrate the principles and implementation methods of the present invention. The above examples are only used to help understand the method and core ideas of the present invention. At the same time, for those skilled in the art, according to the ideas of the present invention, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as limiting the present invention.

Claims

1. A broadband microwave absorber, characterized in that: The invention comprises a plurality of wave absorbing units, wherein the wave absorbing units comprise a microstructure unit layer for performing ohmic loss on electromagnetic waves, wherein the microstructure unit layer comprises a basic structure, wherein the periphery of the basic structure comprises a plurality of first triangular structures, and second triangular structures are arranged on both sides of the first triangular structures extending outward, a hole is arranged in the middle of the basic structure, and the periphery of the hole comprises a plurality of first triangular holes, second triangular holes are arranged on both sides of the first triangular holes extending outward, third triangular holes are arranged on both sides of the second triangular holes extending outward, fourth triangular holes and fifth triangular holes are arranged on both sides of the first triangular holes extending outward, and the fourth triangular holes and the fifth triangular holes are respectively arranged on both sides of the second triangular holes.

2. The broadband microwave absorber according to claim 1, characterized in that: The material of the basic structure is indium tin oxide.

3. The broadband microwave absorber according to claim 1, characterized in that: An octagonal structure is connected inside the excavated hole.

4. The broadband microwave absorber according to claim 1, characterized in that: The thickness of the microstructure unit layer is 0.01 mm.

5. The broadband microwave absorber according to claim 1, characterized in that: The wave absorbing unit also includes a dielectric layer that performs dielectric loss on electromagnetic waves, and the dielectric layer is bonded to the microstructure unit layer.

6. The broadband microwave absorber according to claim 5, characterized in that: The material of the dielectric layer is quartz.

7. The broadband microwave absorber according to claim 5, characterized in that: The thickness of the dielectric layer is 3-5 mm.

8. The broadband microwave absorber according to claim 5, characterized in that: The wave absorbing unit further comprises a conductive reflecting layer for reflecting electromagnetic waves, and the conductive reflecting layer is laminated and arranged on a side of the dielectric layer away from the microstructure unit layer.

9. The broadband microwave absorber according to claim 8, characterized in that: The conductive reflective layer is made of copper.

10. The broadband microwave absorber according to claim 8, characterized in that: The thickness of the conductive reflective layer is 0.1-0.2 mm.

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