Ceramic substrate, light source device, method for manufacturing ceramic substrate, and method for manufacturing light source device

Abstract

Provided are a ceramic substrate capable of improving heat dissipation, a light source device, a method for manufacturing the ceramic substrate, and a method for manufacturing the light source device. This ceramic substrate is provided with: a base material which has a first surface and a second surface opposite the first surface, and which has a through-hole in which a first opening diameter in the first surface is larger than a second opening diameter in the second surface; one or more solid particles disposed in the through hole; and a conductive member disposed in the through-hole, the thermal conductivity of the solid particles being greater than the thermal conductivity of the conductive member, and the conductive member being continuous between the first surface and the second surface.

Description

Technical Field

[0001] The present disclosure relates to a ceramic substrate, a light source device, a method for manufacturing the ceramic substrate, and a method for manufacturing the light source device. Background Art

[0002] Conventionally, there is disclosed a component package including a ceramic substrate having a through hole and a wiring substrate including a conductive member provided with the through hole, and the conductive member and the component are electrically connected.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2003-115658 Summary of the invention

[0006] Problems to be solved by the invention

[0007] In a ceramic substrate, part of the heat generated is released through the conductive member, and therefore, further improvement in heat dissipation properties of the ceramic substrate is required.

[0008] An object of the present disclosure is to provide a ceramic substrate, a light source device, a method for manufacturing a ceramic substrate, and a method for manufacturing a light source device that can improve heat dissipation.

[0009] Methods for solving problems

[0010] According to one method of the disclosed technology, a ceramic substrate comprises: a base material having a first surface and a second surface opposite to the first surface, and having a through hole having a first opening diameter on the first surface larger than a second opening diameter on the second surface, one or more solid particles arranged in the through hole, and a conductive component arranged in the through hole, wherein the thermal conductivity of the solid particles is larger than the thermal conductivity of the conductive component, and the conductive component is continuous between the first surface and the second surface.

[0011] According to one mode of the disclosed technology, a method for manufacturing a ceramic substrate has the following steps: a step of preparing a substrate having a first surface and a second surface opposite to the above-mentioned first surface, and having a through hole having a first opening diameter on the above-mentioned first surface larger than a second opening diameter on the above-mentioned second surface, a step of disposing one or more solid particles in the above-mentioned through hole from the above-mentioned first surface side, a step of disposing a conductive paste in the above-mentioned through hole after the step of disposing the above-mentioned solid particles, and a step of sintering the above-mentioned conductive paste to form a conductive component continuous between the above-mentioned first surface and the above-mentioned second surface, wherein the thermal conductivity of the above-mentioned solid particles is larger than the thermal conductivity of the above-mentioned conductive component.

[0012] Effects of the Invention

[0013] According to the present disclosure, it is possible to provide a ceramic substrate capable of improving heat dissipation, a light source device, a method for manufacturing a ceramic substrate, and a method for manufacturing a light source device. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a top view showing the ceramic substrate according to the first embodiment.

[0015] Figure 2A It is a cross-sectional view taken along line IIa-IIa of the ceramic substrate according to the first embodiment.

[0016] Figure 2B It is a cross-sectional view taken along line IIb-IIb showing the ceramic substrate according to the first embodiment.

[0017] Figure 3A It is a cross-sectional view showing an example of solid particles.

[0018] Figure 3B It is a cross-sectional view showing an example of solid particles.

[0019] Figure 3C It is a cross-sectional view showing an example of solid particles.

[0020] Figure 4A It is a plan view showing an example of a planar shape of an inner side surface that defines a through hole.

[0021] Figure 4B It is a plan view showing an example of a planar shape of an inner side surface that defines a through hole.

[0022] Figure 4C It is a plan view showing an example of a planar shape of an inner side surface that defines a through hole.

[0023] Figure 4D It is a plan view showing an example of a planar shape of an inner side surface that defines a through hole.

[0024] Figure 4E It is a plan view showing an example of a planar shape of an inner side surface that defines a through hole.

[0025] Figure 5A It is a cross-sectional view showing an example of arrangement of solid particles in a through-hole.

[0026] Figure 5B It is a cross-sectional view showing an example of arrangement of solid particles in a through-hole.

[0027] Figure 5C It is a cross-sectional view showing an example of arrangement of solid particles in a through-hole.

[0028] Figure 6 It is a cross-sectional view showing the method for manufacturing the ceramic substrate according to the first embodiment.

[0029] Figure 7 It is a cross-sectional view showing the method for manufacturing the ceramic substrate according to the first embodiment.

[0030] Figure 8 It is a cross-sectional view showing the method for manufacturing the ceramic substrate according to the first embodiment.

[0031] Fig. 9 It is a cross-sectional view showing the method for manufacturing the ceramic substrate according to the first embodiment.

[0032] Fig.10 It is a cross-sectional view showing the method for manufacturing the ceramic substrate according to the first embodiment.

[0033] Fig.11 It is a cross-sectional view showing the method for manufacturing the ceramic substrate according to the first embodiment.

[0034] Fig.12 It is a cross-sectional view showing the method for manufacturing the ceramic substrate according to the first embodiment.

[0035] Fig.13 It is a cross-sectional view showing an example of a method of disposing solid particles in a through hole.

[0036] Fig.14 This is a cross-sectional view showing an example of a method of disposing the conductive paste.

[0037] Fig.15 It is a cross-sectional view showing a ceramic substrate according to the second embodiment.

[0038] Fig.16 It is a cross-sectional view showing a method for manufacturing a ceramic substrate according to the second embodiment.

[0039] Fig.17 It is a cross-sectional view showing a method for manufacturing a ceramic substrate according to the second embodiment.

[0040] Fig.18 It is a cross-sectional view showing a method for manufacturing a ceramic substrate according to the second embodiment.

[0041] Fig.19 It is a cross-sectional view showing a method for manufacturing a ceramic substrate according to the second embodiment.

[0042] Fig. 20 It is a cross-sectional view showing a method for manufacturing a ceramic substrate according to the second embodiment.

[0043] Fig.21 It is a cross-sectional view showing a light source device according to a third embodiment.

[0044] Explanation of symbols

[0045] 1, 2: Ceramic substrate

[0046] 10.10A: Base material

[0047] 11, 11A: Page 1

[0048] 12, 12A: Side 2

[0049] 13: The first film

[0050] 13X: 1st opening

[0051] 14: The 2nd film

[0052] 14X: 2nd opening

[0053] 15: Laser

[0054] 19: Substrate with film

[0055] 20: Through hole

[0056] 21: Inside side

[0057] 30: Solid particles

[0058] 31: Diamond particles

[0059] 32: Nickel plating

[0060] 33: Copper plating

[0061] 36, 37: Composite particles

[0062] 40: Conductive components

[0063] 41: Conductive paste

[0064] 60: Light source device

[0065] 70: Light-emitting element

[0066] 71: Component body

[0067] 72: Component electrode DETAILED DESCRIPTION

[0068] Hereinafter, embodiments for implementing the present disclosure will be described with reference to the accompanying drawings. In the following description, in order to embody the technical idea of ​​the present disclosure, the present disclosure is not limited to the following description unless otherwise specified.

[0069] In each of the drawings, the same symbol is sometimes attached to components having the same function. Considering the ease of description or understanding of the key points, for convenience, they are sometimes shown separately in the embodiment, and replacement or combination of the components shown in different embodiments and examples becomes possible. In the embodiment shown below, matters that are different from the previously shown embodiment are mainly described, and for matters that are common to the previously shown embodiment, repeated descriptions are sometimes omitted. The size, positional relationship, etc. of the components shown in each of the drawings are sometimes exaggerated to make the description clear. As a cross-sectional view, an end view that only shows a cut section is sometimes used.

[0070] In this specification, observing an object from the first surface side or the second surface side of the base material of the ceramic substrate is sometimes referred to as a top view, the surface of the object observed from the first surface side of the base material of the ceramic substrate is sometimes referred to as an upper surface, and the surface opposite to the upper surface is sometimes referred to as a lower surface.

[0071] (First embodiment)

[0072] A first embodiment will be described. The first embodiment relates to a ceramic substrate. Figure 1 It is a top view showing the ceramic substrate according to the first embodiment. Figure 2A and Figure 2B It is a cross-sectional view showing the ceramic substrate according to the first embodiment. Figure 2A for Figure 1 Cross-sectional view along line IIa-IIa in FIG. Figure 2B for Figure 1 Cross-sectional view along line IIb-IIb in FIG.

[0073] Figure 1 , Figure 2A and Figure 2B As shown, the ceramic substrate 1 according to the first embodiment includes a base material 10 , solid particles 30 , and a conductive member 40 .

[0074] The substrate 10 is an insulating substrate having a first surface 11 and a second surface 12 opposite to the first surface 11. The substrate 10 is, for example, ceramic. For example, when the material of the substrate 10 is silicon nitride (Si3N4), the thickness t of the substrate 10 is greater than 100 μm and less than 320 μm, and when the material of the substrate 10 is aluminum nitride (AlN), the thickness t of the substrate 10 is greater than 100 μm and less than 1000 μm. The substrate 10 is formed with at least one through hole 20 that passes through the first surface 11 and the second surface 12. For example, the shape of the through hole 20 in a plan view is a square. In addition, the shape of the cross section perpendicular to the direction along the center of the through hole 20 in a plan view (hereinafter sometimes referred to as "the plan view shape of the inner side surface of the predetermined through hole 20") is also a square. The through hole 20 has a continuous inner side surface 21 from the first surface 11 to the second surface 12. The first opening diameter X1 in the first surface 11 of the through hole 20 is larger than the second opening diameter X2 in the second surface 12. The first opening diameter X1 is equivalent to the diameter of the largest imaginary circle contained in the interior of the figure formed by the contour in the first surface 11 of the through hole 20. The second opening diameter X2 is equivalent to the diameter of the largest imaginary circle contained in the interior of the figure formed by the contour in the second surface 12 of the through hole 20. The opening diameter of the through hole 20 increases continuously from the second surface 12 to the first surface 11. For example, the inner surface 21 is inclined at an angle θ of 80° to 89° relative to the second surface 12, preferably at an angle θ of 83° to 86°. When the thickness t of the substrate 10 is 100 μm to 320 μm, for example, the first opening diameter X1 is 85 μm to 290 μm, and the second opening diameter X2 is 65 μm to 250 μm.

[0075] A conductive member 40 is disposed in the through hole 20, and the conductive member 40 is continuous between the first surface 11 and the second surface 12. Solid particles 30 are buried in the conductive member 40. The solid particles 30 are buried in the conductive member 40, which means that the entire surface of the solid particles 30 is covered by the conductive member 40. The conductive member 40 is in contact with the solid particles 30. The conductive member 40 is in contact with the solid particles 30, thereby forming a heat transfer path as described later. The thermal conductivity of the solid particles 30 is greater than the thermal conductivity of the conductive member 40. For example, the conductive member 40 contains sintered copper or sintered silver. The conductive member 40 may contain a titanium compound. In addition, in the through hole 20, the conductive member 40 may not necessarily contribute to the conduction of electricity. That is, the conductive member 40 may act as a heat dissipation member.

[0076] The solid particles 30 are arranged in the through hole 20. In the first embodiment, one solid particle 30 is arranged in one through hole 20. The solid particle 30, for example, comprises at least one selected from diamond, silicon carbide (SiC), boron nitride (BN), nanocarbon, copper (Cu) and silver (Ag). For example, diamond and nanocarbon have high thermal conductivity, so they are preferred. In the present embodiment, the solid particle 30 is diamond. The solid particle 30 can be an artificially manufactured industrial diamond. Diamond has a high hardness and a small thermal expansion coefficient (CTE) compared with the metal used for the substrate. In addition, the thermal expansion coefficient of diamond is close to that of ceramics compared with the thermal expansion coefficient of metals such as copper and silver. Therefore, by configuring diamond as a solid particle 30 in the conductive member 40, the occurrence of shrinkage, cracks, and cracks in ceramics of the conductive member 40 caused by heat can be reduced. In addition, the thermal conductivity of diamond is greater than that of metal, and it is isotropic in the heat conduction direction. Therefore, by configuring diamond in the conductive member 40, the heat dissipation of the substrate 10 can be improved. The shape of the solid particle 30 is, for example, a sphere or a polyhedron, and can be a polyhedron close to a sphere. For example, the spherical equivalent diameter D (in other words, the particle diameter D) of the solid particle 30 is larger than the second opening diameter X2, smaller than the first opening diameter X1, and smaller than the thickness t of the substrate 10. For example, the spherical equivalent diameter D of the solid particle 30 is greater than 50 μm and less than 500 μm. The diameter of the largest imaginary sphere contained in the solid particle 30 is preferably larger than the second opening diameter X2, and the diameter of the smallest imaginary sphere surrounding the solid particle 30 is preferably smaller than the first opening diameter X1. In addition, in this specification, "spherical equivalent diameter (particle diameter)" refers to the diameter of the sphere when the smallest sphere circumscribed with the diamond D is assumed.

[0077] Here, the structure of the solid particles 30 will be described. Figure 3A to Figure 3C It is a cross-sectional view showing an example of the solid particle 30 . Figure 3A In the example shown, the solid particle 30 is a diamond particle 31. The shape of the diamond particle 31 is, for example, a polyhedron having cleavage planes. The solid particle 30 may be a composite particle having the diamond particle 31 and a plating layer covering the diamond particle 31. For example, Figure 3B As shown in FIG. 1 , the solid particle 30 may be a composite particle 36 including a diamond particle 31 and a nickel (Ni) plating layer 32 covering the diamond particle 31. Figure 3CAs shown in the figure, the solid particle 30 can be a composite particle 37 having a diamond particle 31, a nickel (Ni) plating layer 32 covering the diamond particle 31, and a copper (Cu) plating layer 33 covering the nickel plating layer. In particular, the solid particle 30 can obtain excellent thermal conductivity by including the diamond particle 31. In addition, in the case where the solid particle 30 is a composite particle having a plating layer on the surface, the thickness of the plating layer is very small relative to the volume of the diamond particle 31, so the thickness of the plating layer is ignored.

[0078] The particle size D of the solid particles 30 is determined by image analysis of cross-sectional observation photographs or selection using a sieve. For example, in a scanning electron microscope energy dispersive X-ray segment optical method (SEM-EDX. Hereinafter, sometimes referred to as EDX), the diamond particles 31 are observed as black compared to the copper and silver contained in the conductive member 40. The area displayed in black is extracted from the image, and the size is measured to obtain the particle size D of the solid particles 30. Alternatively, the metal contained in the conductive member 40 is dissolved using an acidic solution, so that the solid particles 30 can be taken out. The taken out solid particles 30 are observed, for example, using an optical microscope, a scanning electron microscope (SEM) or SEM-EDX, and their size is measured to obtain the particle size D of the solid particles 30. The taken out solid particles 30 can be sieved using a sieve. The solid particles 30 are sieved sequentially from a sieve with a fine mesh to a sieve with a coarse mesh. The particle size D of the solid particles 30 can be estimated by the size of the mesh when the solid particles 30 pass through the sieve.

[0079] The volume of the solid particles 30 is preferably 25% or more of the volume of the through hole 20, more preferably 30% or more, and further preferably 35% or more. The higher the proportion of the solid particles 30 in the through hole 20, the better the heat dissipation can be obtained. The proportion of the solid particles 30 in the through hole 20 is preferably determined in consideration of heat dissipation and conductivity.

[0080] In the ceramic substrate 1, the conductive member 40 and the solid particles 30 are arranged in the through hole 20. The thermal conductivity of the solid particles 30 is greater than that of the conductive member 40. Therefore, the thermal conductivity can be improved compared with the case where the solid particles 30 are not arranged in the through hole 20. That is, according to the ceramic substrate 1, the heat dissipation can be improved.

[0081] Furthermore, since the conductive member 40 is continuous between the first surface 11 and the second surface 12 , conductivity can be ensured between the surface of the conductive member 40 on the first surface 11 side and the surface on the second surface 12 side.

[0082] The following describes the planar shape of the inner side surface defining the through hole 20. The planar shape of the inner side surface defining the through hole 20 is not limited to a square shape. Figure 4A to Figure 4E This is a diagram showing the through hole 20 of the ceramic substrate 1 as viewed from the first surface 11 side of the base 10 . Figure 4A As shown in FIG. 1 , the top view shape of the inner side surface of the through hole 20 may be a rectangle (rectangle other than a square) having long sides and short sides. In this case, the length of the short side in the first surface 11 is the first opening diameter X1, and the length of the short side in the second surface 12 is the second opening diameter X2. The length of the long side is not less than 1.5 times and not more than 2.0 times the length of the short side.

[0083] Figure 4B As shown in FIG. 1 , the top view shape of the inner side surface of the through hole 20 may be a cross shape. Specifically, the top view shape of the inner side surface of the through hole 20 is a shape in which the long sides of one rectangle overlap with the long sides of the other rectangle in two rectangles in a manner that they intersect each other. The angle of intersection at this time is, for example, 90°. In this case, the distance between the two most distant intersections of the four intersections of the two overlapping rectangles in each of the first face 11 and the second face 12 is the first opening diameter X1 and the second opening diameter X2. The length of the long side of each rectangle is not less than 1.5 times and not more than 2.0 times the length of the short side.

[0084] Figure 4C As shown in FIG. 1 , the top view shape of the inner side surface of the through hole 20 may be circular. In this case, the diameter of the through hole 20 in the first surface 11 is the first opening diameter X1, and the diameter of the through hole 20 in the second surface 12 is the second opening diameter X2. In addition, when the top view shape of the inner side surface of the through hole 20 is circular, it is preferred that the shape of the solid particles 30 is not spherical, but a shape with gaps formed between the inner side surfaces 21 of a polyhedron or the like. This is because it is easy to make the conductive paste 41 flow closer to the second surface 12 than the solid particles 30.

[0085] Figure 4D As shown, the plan view shape of the inner side surface defining the through hole 20 may be an ellipse. Figure 4D In the example shown, the length of the minor axis of the through hole 20 in the first surface 11 is the first opening diameter X1, and the length of the minor axis of the through hole 20 in the second surface 12 is the second opening diameter X2. The length of the major axis is 1.5 to 2.0 times the length of the minor axis.

[0086] Figure 4E As shown in FIG. 1 , the top view shape of the inner side surface of the through hole 20 can be a shape in which the major axis of one of the two ellipses overlaps with the major axis of the other ellipse. The angle of intersection at this time is, for example, 90°. In this case, the distance between the two most distant intersections of the four intersections of the two ellipses overlapping in each of the first surface 11 and the second surface 12 is the first opening diameter X1 and the second opening diameter X2. The length of the major axis of each ellipse is not less than 1.5 times and not more than 2.0 times the length of the minor axis.

[0087] In comparing the sizes of the first opening diameter X1 and the second opening diameter X2, the equivalent circular diameter of the opening shape in the first surface 11 of the through hole 20 can be used as the first opening diameter X1, and the equivalent circular diameter of the opening shape in the second surface 12 of the through hole 20 can be used as the second opening diameter X2.

[0088] The thickness t of the substrate 10, the first opening diameter X1, the second opening diameter X2, and the spherical equivalent diameter D of the solid particles 30 are not particularly limited. Table 1 shows examples of the thickness t of the substrate 10, the first opening diameter X1, the second opening diameter X2, and the spherical equivalent diameter D of the solid particles 30 when the top view shape of the inner side surface of the through hole 20 is defined as a square or a circle.

[0089] [Table 1]

[0090]

[0091] When the dimensions shown in Table 1 are used, the angle θ of the inclination of the inner side surface 21 with respect to the second surface 12 is preferably not less than 83° and not more than 86°.

[0092] A plurality of solid particles 30 may be arranged in one through-hole 20 . Figure 5A As shown, two solid particles 30 may be arranged in one through hole 20 . Figure 5B As shown, three solid particles 30 can be arranged in one through hole 20. In the case where a plurality of solid particles 30 are arranged in one through hole 20, the plurality of solid particles 30 can be in direct contact with each other, and there can be a conductive member 40 between them. Table 2 shows an example of the thickness t of the substrate 10 and the spherical equivalent diameter D of the solid particles 30 when two solid particles 30 are arranged in one through hole 20, and Table 3 shows an example of the thickness t of the substrate 10 and the spherical equivalent diameter D of the solid particles 30 when three solid particles 30 are arranged in one through hole 20. However, the spherical equivalent diameter D of the solid particles 30 in Tables 2 and 3 is not limited to the values ​​described in Tables 2 and 3.

[0093] [Table 2]

[0094]

[0095] [Table 3]

[0096]

[0097] Figure 5A or Figure 5B In the example shown, the plurality of solid particles 30 overlap in the depth direction of the through hole 20. Figure 5C As shown in the figure, the through holes 20 may be arranged in a vertical direction in the depth direction without overlapping each other. Figure 5C As shown in FIG. 1 , a portion of the solid particles 30 may not be covered by the conductive member 40 and may be exposed from the conductive member 40 on at least one of the first surface 11 and the second surface 12 . Figure 5A to Figure 5C In the example shown, the plan view shape of the inner side surface of the through hole 20 is defined as a square or a circle.

[0098] Next, a method for manufacturing the ceramic substrate 1 according to the first embodiment will be described. Figure 6 to Figure 12 It is a cross-sectional view showing the method for manufacturing the ceramic substrate 1 according to the first embodiment.

[0099] The manufacturing method of the ceramic substrate 1 involved in the first embodiment includes: a step of preparing a substrate having a through hole; a step of configuring one or more solid particles in the through hole; a step of configuring a conductive paste in the through hole after the step of configuring the solid particles; and a step of sintering the conductive paste to form a conductive component.

[0100] The step of preparing a substrate having a through hole is to prepare a substrate 10 having a first surface 11 and a second surface 12 opposite to the first surface 11 , and having a through hole 20 having a first opening diameter X1 in the first surface 11 larger than a second opening diameter X2 in the second surface 12 .

[0101] In detail, Figure 6 As shown in FIG. 1 , a ceramic substrate 10A is prepared as the substrate 10. The ceramic is, for example, silicon nitride (Si3N4) or aluminum nitride (AlN). The substrate 10A has a first surface 11A as the first surface 11 and a second surface 12A as the second surface 12. When the conductive paste described later shrinks by curing, Figure 6 As shown in FIG. 1 , it is preferred that the first film 13 is attached to the first surface 11A, and the second film 14 is attached to the second surface 12A.

[0102] then, Figure 7As shown, by irradiating the laser 15 from the first film 13 side, the first opening 13X is formed in the first film 13, the through hole 20 whose first opening diameter X1 is larger than the second opening diameter X2 is formed in the substrate 10A, and the second opening 14X is formed in the second film 14. The laser 15 is, for example, a CO2 laser or a YAG laser. In this embodiment, the through hole 20 is formed by irradiating a CO2 laser with a wavelength of 9.4 μm and a maximum output of 715 W. As a result, the first opening 13X of the first film 13 attached to the first surface 11A is set at a position overlapping with the through hole 20, and the second opening 14X of the second film 14 attached to the second surface 12A is set at a position overlapping with the through hole 20. Thus, the laminate of the first film 13, the substrate 10 and the second film 14 is prepared as a substrate 19 with a film. And the substrate 10A has a first surface 11 and a second surface 12, and is made into a substrate 10 with a through hole 20.

[0103] The process of disposing one or more solid particles in the through hole is as follows: Figure 8 As shown, one or more solid particles 30 are arranged in the through hole 20 from the first surface 11 side. When the second opening diameter X2 is smaller than the spherical equivalent diameter D of the solid particle 30, the solid particle 30 is clamped by the inner side surface 21 and cannot pass through the through hole 20, and is retained in the through hole 20. When the diameter of the largest imaginary sphere contained in the interior of the solid particle 30 is larger than the second opening diameter X2, the solid particle 30 is particularly likely to be retained in the through hole 20.

[0104] After the step of disposing the solid particles, the step of disposing the conductive paste in the through hole is as follows. Fig. 9 As shown, an adsorption paper 42 is arranged in contact with the second film 14, and a conductive paste 41 is arranged in the through hole 20 using a scraper 43 while suction is performed from the second film 14 side. The adsorption paper 42 is a member with coarse spacing between paper fibers and easy conduction of air, such as metal laminated paper. By suctioning in the direction of arrow 49 (hereinafter, sometimes referred to as suction 49), the solid particles 30 can be efficiently arranged in the through hole 20. The conductive paste 41 is, for example, a copper paste or a silver paste. The copper paste or the silver paste may contain an activated metal. The conductive paste 41 is preferably continuous between the first surface 11 and the second surface 12 in the through hole 20, and the through hole 20 in which the solid particles 30 are arranged can be filled with the conductive paste 41. In this way, the conductive paste 41 is arranged in the through hole 20. The conductive paste 41 can also be arranged in the first opening 13X and the second opening 14X.

[0105] Before forming the above-mentioned conductive member, Fig.10As shown, there may be a step of peeling the first film 13 and the second film 14 from the substrate 10. When the first film 13 and the second film 14 are peeled from the substrate 10, a conductive paste 41 is obtained in which the first surface 11 and the second surface 12 protrude from the thickness of the first film 13 and the second film 14 and a portion of the side surface is exposed.

[0106] Step of sintering the conductive paste to form a conductive member The conductive paste 41 is sintered at a temperature of 150° C. to 900° C. for 0.5 to 3 hours to form a conductive member 40 continuous between the first surface 11 and the second surface 12 .

[0107] In this manner, the ceramic substrate 1 according to the first embodiment can be manufactured.

[0108] After the formation of the conductive member 40, Fig.11 As shown in FIG. 1 , a grinding process or a polishing process is performed to remove the portion protruding from the first surface 11 of the conductive member 40. In addition, a grinding process or a polishing process is performed to remove the portion protruding from the second surface 12 of the conductive member 40. In addition, Fig.12 As shown, the conductive member 40 exposed on the first surface 11 and the second surface 12 may be subjected to surface treatment such as plating to form a metal layer. Fig.12 In the example shown, a metal layer is arranged as a first connection pad 51 on the surface of the conductive member 40 on the first surface 11 side, and a metal layer is arranged as a second connection pad 52 on the surface of the conductive member 40 on the second surface 12 side. The first connection pad 51 and the second connection pad 52 include, for example, nickel, palladium, titanium, ruthenium, gold, or the like.

[0109] When the conductive paste 41 is arranged, the conductive paste 41 is arranged in a larger amount than the volume of the through hole 20, and therefore, before sintering, the conductive paste 41 overflows from the first surface 11 and the second surface 12. Therefore, as the volume of the conductive member 40 becomes smaller than the volume of the conductive paste 41 during sintering, it is difficult to form a recessed portion that is recessed from the first surface 11 or the second surface 12 on the surface of the conductive member 40.

[0110] In the step of disposing one or two or more solid particles in the through-hole, a metal mask may be used when disposing the solid particles 30 in the through-hole 20 . Fig.13 It is a cross-sectional view showing an example of a method of disposing the solid particles 30 in the through-hole 20 .

[0111] In this example, Fig.13As shown, a metal mask 16 having an opening 16X is disposed on the first surface 11 of the substrate 10. The opening 16X of the metal mask 16 has an opening diameter larger than the first opening diameter X1 of the first surface 11, and when viewed from above perpendicular to the first surface 11, the through hole 20 and the second opening 14X are located inside the opening 16X.

[0112] Next, a scraper 17 is used to arrange one solid particle 30 in the through hole 20. In the present embodiment, by reciprocating the scraper 17 on the metal mask 16, the solid particle 30 is arranged in the through hole 20 in the forward path, and the remaining solid particles 30 in and around the through hole 20 are removed in the backward path. Then, the metal mask 16 can be removed from the first surface 11 of the substrate 10.

[0113] In addition, a liquid in which a plurality of solid particles 30 are dispersed can be applied from the metal mask 16 side by, for example, spraying, and the solid particles 30 can be arranged in the through-hole 20 from the liquid. The liquid is used to sinter the conductive paste and volatilize in the process of forming the conductive member. In addition, a large number of solid particles 30 can be sprayed toward the metal mask 16 using a gas such as air, and the solid particles 30 can be arranged in the through-hole 20.

[0114] By this method, solid particles 30 can be arranged in through-holes 20. By using metal mask 16 when arranging solid particles 30 in through-holes 20, solid particles 30 can be prevented from colliding with first surface 11 of substrate 10, thereby preventing substrate 10 from being cracked, chipped, or damaged.

[0115] In the step of disposing the conductive paste in the through-holes after the step of disposing the solid particles, when disposing the conductive paste 41 in the through-holes 20 , the metal mask 16 and the adsorption paper 42 may be used as described above. Fig.14 It is a cross-sectional view showing another example of the method of arranging the conductive paste 41 .

[0116] In this example, the adsorbent paper 42 is arranged on the second film 14 so as to overlap with the through-hole 20 and the second opening 14X in a plan view.

[0117] Next, while performing suction 49 from the second film 14 side, the conductive paste 41 is arranged in the through hole 20 and the second opening 14X using a scraper 43. By performing suction 49, the solid particles 30 are introduced into the through hole 20, thereby enabling the solid particles 30 to be efficiently arranged in the through hole 20. In addition, the conductive paste 41 can be prevented from leaking out of the through hole 20 and the second opening 14X by the adsorption paper 42. In this example, the conductive paste 41 can be filled in the opening 16X of the metal mask 16. Next, the metal mask 16 and the second film 14 are peeled off from the substrate 10.

[0118] When the first film 13, the second film 14, and the metal mask 16 are peeled off from the substrate 10, the conductive paste 41 disposed in the through hole 20 is preferably not attached to the peeled first film 13, the second film 14, and the metal mask 16 as much as possible. For example, the first film 13 is preferably peeled off slowly at an angle close to the horizontal relative to the first surface 11 of the substrate 10. In addition, for example, the second film 14 is preferably peeled off slowly at an angle close to the horizontal relative to the second surface 12 of the substrate 10.

[0119] By using such a method, conductive paste 41 can be arranged in through-hole 20 .

[0120] (Second embodiment)

[0121] The second embodiment will be described. Fig.15 2 is a cross-sectional view showing a ceramic substrate according to the second embodiment. The second embodiment is different from the first embodiment in that the conductive member 40 protrudes from the first surface 11 and the second surface 12 of the base material 10 .

[0122] Fig.15 As shown, the ceramic substrate 2 according to the second embodiment includes a first connection pad 51 and a second connection pad 52 on the surface of the conductive member 40 protruding from the first surface 11 and the second surface 12 of the substrate 10. The conductive member 40 is composed of a sintered body 45, and the sintered body 45 includes a portion on the first surface 11 side of the substrate 10 and a portion on the second surface 12 side of the substrate 10.

[0123] The first connection pad 51 is provided on the first surface 11, in contact with the conductive member 40, and electrically connected to the conductive member 40. The second connection pad 52 is provided on the second surface 12, in contact with the conductive member 40, and electrically connected to the conductive member 40. The first connection pad 51 and the second connection pad 52 are electrically connected to each other via the conductive member 40. The first connection pad 51 and the second connection pad 52 include, for example, nickel, palladium, titanium, ruthenium, gold, or the like.

[0124] Next, a method for manufacturing the ceramic substrate 2 according to the second embodiment will be described. Figures 16 to 20 It is a cross-sectional view showing a method for manufacturing the ceramic substrate 2 according to the second embodiment.

[0125] first, Fig.16As shown in the figure, a substrate 10A is prepared as the substrate 10. The substrate 10A has a first surface 11A as the first surface 11 and a second surface 12A as the second surface 12. Next, by irradiating the laser 15 from the first surface 11A side without pasting the first film 13 and the second film 14, the first surface 11A and the second surface 12A of the substrate 10A are penetrated, and a through hole 20 having a first opening diameter X1 on the first surface 11 and a second opening diameter X2 on the second surface 12 is formed. The first opening diameter X1 on the first surface 11 of the through hole 20 is larger than the second opening diameter X2 on the second surface 12. As a result, a substrate 10 having a first surface 11 and a second surface 12 is prepared from the substrate 10A. Such a substrate 10 can be purchased.

[0126] then, Fig.17 As shown, one solid particle 30 is arranged in the through hole 20 from the first surface 11 side.

[0127] then, Fig.18 As shown in the figure, while the conductive paste 41 is arranged on the through hole 20, the conductive paste 41 is also arranged on the first surface 11 and the second surface 12. In the present embodiment, the conductive paste 41 is printed on the first surface 11, the substrate 10 is turned over, and the conductive paste 41 is printed on the second surface 12. In detail, before the conductive paste 41 is arranged on the through hole 20 and the first surface 11, the first adsorbent paper is arranged on the second surface 12. Furthermore, the conductive paste 41 is printed from the first surface 11 side, and the conductive paste 41 is arranged on the through hole 20 and the first surface 11. The second adsorbent paper is arranged on the conductive paste 41 from the first surface 11 side, and the substrate 10 is turned over. Next, the first adsorbent paper is peeled off from the second surface 12, the conductive paste 41 is printed from the second surface 12 side, and the conductive paste 41 is arranged on the through hole 20 and the second surface 12. Then, the second adsorption paper is peeled off from the conductive paste 41 on the first surface 11. Alternatively, as described above, the first adsorption paper and the second adsorption paper may be used, and after printing the conductive paste 41 on the first surface 11, the conductive paste 41 may be semi-dried at a temperature of 80° C. to 100° C. for 1 minute to 3 minutes before inverting the substrate 10. In this case, the second adsorption paper may not be used.

[0128] Thus, when the substrate 10 is inverted, the solid particles 30 disposed in the through-hole 20 can be prevented from falling out of the through-hole 20 or from moving in the through-hole 20 and changing position.

[0129] then, Fig.19 As shown in FIG. 1 , the conductive paste 41 is sintered at a temperature of 150° to 900° for 0.5 to 3 hours to obtain a sintered body 45 including the conductive member 40. Then, Fig. 20As shown, at least one of the surfaces of the sintered body 45 on the first surface 11 side or the sintered body 45 on the second surface 12 side of the substrate 10 is processed by laser and etched, etc., to remove at least a portion of the sintered body 45, and pattern formation is performed in a manner to form a desired wiring. In etching, wet etching is preferably used from the viewpoint of processing efficiency and accuracy. In addition, the sintered body 45 covering the surface of the first surface 11 and the surface of the second surface 12 can be removed by grinding, wrapping, etc.

[0130] Next, first connection pads 51 and second connection pads 52 are disposed on at least a portion of the surface of the conductive member 40 protruding from the first surface 11 and the second surface 12 of the substrate 10. The first connection pads 51 and the second connection pads 52 are metal layers containing, for example, nickel, palladium, titanium, ruthenium, gold, etc., and can be formed by plating.

[0131] This operation can produce Fig.15 A ceramic substrate 2 according to the second embodiment is shown.

[0132] The second embodiment can also obtain the same effects as those of the first embodiment.

[0133] (Third embodiment)

[0134] A third embodiment will be described. The third embodiment relates to a light source device. Fig.21 It is a cross-sectional view showing a light source device according to a third embodiment.

[0135] Fig.21 As shown, the light source device 60 according to the third embodiment includes the ceramic substrate 1 according to the first embodiment and a light emitting element 70 .

[0136] The light emitting element 70 is arranged on the second surface 12. The light emitting element 70 has an element body 71 including a semiconductor and at least a positive and negative pair of element electrodes 72. The element electrode 72 is provided on the lower surface of the element body 71. In the light emitting element 70, the surface of the element body 71 on which the element electrode 72 is provided (i.e., the lower surface of the element body 71) is mounted on the second connection pad 52 of the ceramic substrate 1 in a manner facing the second surface 12. One element electrode 72 of the light emitting element 70 is preferably arranged on one second connection pad 52 of the ceramic substrate 1. Moreover, the conductive member 40 of the ceramic substrate 1 is electrically connected to the element electrode 72.

[0137] In the light emitting element 70, the semiconductor included in the element main body 71 preferably includes various semiconductors such as a III-V compound semiconductor and a II-VI compound semiconductor. As the semiconductor, In X Al Y Ga 1-X-YN (0≤X, 0≤Y, X+Y≤1) and other nitride semiconductors, InN, AlN, GaN, InGaN, AlGaN, InGaAlN and the like can also be used. The light emitting element 70 is, for example, an LED (Light Emitting Diode) or an LD (Laser Diode). The peak wavelength of the light emitting element 70 is preferably 400 nm to 530 nm, more preferably 420 nm to 490 nm, and more preferably 450 nm to 475 nm, from the viewpoints of luminous efficiency, and the excitation of the wavelength conversion material described later and the color mixing relationship with the light emitted therefrom.

[0138] In the light source device 60, part of the heat generated in the light emitting element 70 is conducted to the surface on the second surface 12 side of the conductive member 40, and is conducted to the surface on the first surface 11 side of the conductive member 40 through the conductive member 40 and the solid particles 30. Moreover, the heat is released to the outside from the surface on the first surface 11 side of the conductive member 40. In this embodiment, the further away from the light emitting element 70 in the thickness direction of the substrate 10 is, the larger the cross-sectional area of ​​the conductive member 40 is. Therefore, by arranging the light emitting element 70 on the second surface 12 side of the through hole 20 having the second opening diameter X2, the heat generated in the light emitting element 70 is diffused toward the end on the first surface 11 side having the first opening diameter X1 larger than the second opening diameter X2. That is, the path of the heat generated in the light emitting element 70 and released to the outside through the conductive member 40 and the solid particles 30 in the through hole 20 is widened, so that the heat dissipation can be improved.

[0139] In addition, the light emitting element 70 may be disposed on the first surface 11. Even if the light emitting element 70 is disposed on either the first surface 11 or the second surface 12, heat dissipation can be improved by, for example, adjusting the sizes of the first opening diameter X1 and the second opening diameter X2 of the through hole 20, or appropriately selecting the material of the conductive member 40, the type and number of the solid particles 30, and the like.

[0140] In the light source device 60, a translucent member can be arranged on the light emitting element 70. The translucent member is, for example, a roughly rectangular member in the top view, and is arranged in a manner covering the top of the light emitting element 70. The translucent member can be formed using translucent resin materials, ceramics, glass and other inorganic substances. As the resin material, thermosetting resins such as silicone resins, silicone modified resins, epoxy resins, epoxy modified resins, and phenol resins can be used. In particular, silicone resins or modified resins thereof with excellent light resistance and heat resistance are suitable. In addition, the light transmittance here is preferably more than 60% of the light from the light emitting element 70. In addition, thermoplastic resins such as polycarbonate resins, acrylic resins, methylpentene resins, and polynorbornene resins can be used for the translucent member. Furthermore, the translucent member can contain a wavelength conversion substance that converts the wavelength of at least a portion of the light from the light diffusing substance and the light emitting element 70. For example, the translucent member contains a wavelength conversion substance in a resin material, ceramics, glass, etc., and can be a sintered body of the wavelength conversion substance. Furthermore, the light-transmitting member may be a multilayer member in which a resin layer containing a wavelength converting substance and a light diffusing substance is disposed on at least one of the upper surface or the lower surface of a molded body of resin, ceramic, glass or the like.

[0141] As the wavelength conversion material contained in the light-transmitting member, for example, a yttrium-aluminum-garnet-based phosphor (for example, (Y, Gd) 3 (Al, Ga) 5 O 12 :Ce), lutetium-aluminum-garnet phosphors (e.g., Lu3(Al,Ga)5O 12 :Ce), terbium-aluminum-garnet phosphor (for example, Tb3(Al,Ga)5O 12 :Ce), CCA series phosphors (e.g., Ca 10 (PO4)6Cl2:Eu), SAE-based phosphors (e.g., Sr4Al 14 O 25 :Eu), chlorosilicate phosphors (e.g., Ca8MgSi4O 16 Cl2:Eu), silicate phosphors (e.g., (Ba, Sr, Ca, Mg)2SiO4:Eu), β-Sialon phosphors (e.g., (Si, Al)3(O, N)4:Eu) or α-Sialon phosphors (e.g., Ca(Si, Al) 12 (O, N) 16 :Eu) and other oxynitride phosphors, LSN phosphors (e.g., (La, Y)3Si6N 11:Ce), BSESN phosphors (e.g., (Ba, Sr)2Si5N8:Eu), SLA phosphors (e.g., SrLiAl3N4:Eu), CASN phosphors (e.g., CaAlSiN3:Eu) or SCASN phosphors (e.g., (Sr, Ca)AlSiN3:Eu), etc., nitride phosphors, KSF phosphors (e.g., K2SiF6:Mn), KSAF phosphors (e.g., K2(Si 1-x Al x )F 6-x :Mn (here, x satisfies 0<x<1.)) or MGF series phosphors (for example, 3.5MgO·0.5MgF2·GeO2:Mn) and other fluoride-based phosphors, quantum dots with perovskite structure (for example, (Cs, FA, MA)(Pb, Sn)(F, Cl, Br, I)3 (here, FA and MA represent formamidine and methylammonium, respectively.)), II-VI group quantum dots (for example, CdSe), III-V group quantum dots (for example, InP), or quantum dots with chalcopyrite structure (for example, (Ag, Cu)(In, Ga)(S, Se)2), etc. The above-mentioned phosphors are particles. In addition, one of these wavelength conversion substances can be used as a monomer, or two or more of these wavelength conversion substances can be used in combination.

[0142] The sides of the light-emitting element 70 and the translucent member may be covered by a covering member. The covering member directly or indirectly covers the sides of the light-emitting element 70 and the translucent member. The top of the translucent member is exposed from the covering member. In order to improve the light extraction efficiency, the covering member is preferably composed of a member with high light reflectivity. For example, a resin material containing a light-reflective substance such as a white pigment can be used for the covering member.

[0143] As the light reflective material, titanium oxide, zinc oxide, magnesium oxide, magnesium carbonate, magnesium hydroxide, calcium carbonate, calcium hydroxide, calcium silicate, magnesium silicate, barium titanate, barium sulfate, aluminum hydroxide, aluminum oxide, zirconium oxide, silicon oxide, etc. can be cited, and it is preferred to use one of these alone or to use two or more of these in combination. In addition, as the resin material, it is preferred that the resin material having a thermosetting resin such as epoxy resin, epoxy modified resin, silicone resin, silicone modified resin, phenol resin as the main component is set as the matrix.

[0144] Next, a method for manufacturing the light source device 60 according to the third embodiment is described. First, a ceramic substrate 1 is prepared. The ceramic substrate 1 can be manufactured by the above method. After the ceramic substrate 1 is prepared, a light emitting element 70 having an element body 71 and an element electrode 72 is arranged on the ceramic substrate 1. At this time, the conductive member 40 is electrically connected to the element electrode 72 using solder or the like in such a manner that the element electrode 72 is opposed to the second surface 12.

[0145] In this manner, the light source device 60 according to the third embodiment can be manufactured.

[0146] In the third embodiment, the ceramic substrate 2 according to the second embodiment may be used instead of the ceramic substrate 1 according to the first embodiment.

[0147] As mentioned above, although the preferred embodiment etc. were described in detail, it is not limited to the said embodiment etc., Various deformation|transformation and substitution can be added to the said embodiment etc. without departing from the scope described in a claim.

[0148] This specification includes the following embodiments.

[0149] 1. A ceramic substrate, comprising:

[0150] A substrate having a first surface and a second surface opposite to the first surface, and having a through hole having a first opening diameter on the first surface larger than a second opening diameter on the second surface,

[0151] One or more solid particles disposed in the through hole, and

[0152] The conductive member disposed in the through hole,

[0153] The thermal conductivity of the solid particles is greater than the thermal conductivity of the conductive member.

[0154] The conductive member is continuous between the first surface and the second surface.

[0155] 2. The ceramic substrate according to 1 above,

[0156] The second opening diameter is smaller than the spherical equivalent diameter of the solid particles.

[0157] 3. The ceramic substrate according to 1 or 2 above,

[0158] The above solid particles are polyhedrons.

[0159] 4. The ceramic substrate according to any one of 1 to 3 above,

[0160] The volume of the solid particles is 25% or more of the volume of the through-holes.

[0161] 5. The ceramic substrate according to any one of 1 to 4 above,

[0162] The through hole has an inner side surface that is continuous from the first surface to the second surface, and the inner side surface is inclined at an angle of not less than 80° and not more than 89° with respect to the second surface.

[0163] 6. The ceramic substrate according to any one of 1 to 5 above,

[0164] The spherical equivalent diameter of the solid particles is smaller than the thickness of the substrate.

[0165] 7. The ceramic substrate according to any one of 1 to 6 above,

[0166] The solid particles are embedded in the conductive member.

[0167] 8. The ceramic substrate according to any one of 1 to 7 above,

[0168] The solid particles include at least one selected from the group consisting of diamond, silicon carbide, boron nitride, nanocarbon, copper and silver.

[0169] 9. The ceramic substrate according to any one of 1 to 8 above,

[0170] The above solid particles are:

[0171] Diamond particles, or

[0172] Composite particles comprising diamond particles and a plating layer covering the diamond particles.

[0173] 10. The ceramic substrate according to any one of 1 to 9 above,

[0174] The conductive member includes sintered copper or sintered silver.

[0175] 11. A light source device comprising:

[0176] The ceramic substrate according to any one of 1 to 10 above, and

[0177] A light emitting element having an element electrode,

[0178] The conductive member of the ceramic substrate and the element electrode are electrically connected.

[0179] 12. The light source device according to 11 above,

[0180] The light emitting element is disposed on the second surface.

[0181] 13. A method for manufacturing a ceramic substrate, comprising the following steps:

[0182] a step of preparing a substrate having a first surface and a second surface opposite to the first surface, wherein the substrate has a through hole having a first opening diameter on the first surface larger than a second opening diameter on the second surface,

[0183] a step of disposing one or more solid particles in the through hole from the first surface side,

[0184] After the step of disposing the solid particles, a step of disposing a conductive paste in the through holes, and

[0185] a step of sintering the conductive paste to form a conductive member continuous between the first surface and the second surface;

[0186] The thermal conductivity of the solid particles is greater than the thermal conductivity of the conductive member.

[0187] 14. The method for manufacturing a ceramic substrate according to 13 above,

[0188] The second opening diameter is smaller than the spherical equivalent diameter of the solid particles.

[0189] 15. The method for manufacturing a ceramic substrate according to 13 or 14 above,

[0190] The step of preparing the substrate is a step of preparing a substrate with a film, wherein the substrate with a film comprises: a first film attached to the first surface and having a first opening at a position overlapping the through hole, and a second film attached to the second surface and having a second opening at a position overlapping the through hole.

[0191] The step of disposing the conductive paste includes: disposing the conductive paste also in the first opening and the second opening;

[0192] Prior to the step of forming the conductive member, there is a step of peeling off the first film and the second film.

[0193] 16. A method for manufacturing a light source device, comprising the following steps:

[0194] a step of preparing a ceramic substrate manufactured by the method for manufacturing a ceramic substrate according to any one of 13 to 15 above, and

[0195] a step of disposing a light emitting element having element electrodes on the ceramic substrate;

[0196] In the step of arranging the light emitting element, the conductive member is electrically connected to the element electrode.

Claims

1. A ceramic substrate, comprising: A substrate having a first surface and a second surface opposite to the first surface, and having a through hole having a first opening diameter on the first surface larger than a second opening diameter on the second surface, One or more solid particles disposed in the through hole, and The conductive member disposed in the through hole, The thermal conductivity of the solid particles is greater than the thermal conductivity of the conductive member, The conductive member is continuous between the first surface and the second surface.

2. The ceramic substrate according to claim 1, The second opening diameter is smaller than the spherical equivalent diameter of the solid particle.

3. The ceramic substrate according to claim 1 or 2, The solid particles are polyhedrons.

4. The ceramic substrate according to any one of claims 1 to 3, The volume of the solid particles is greater than or equal to 25% of the volume of the through holes.

5. The ceramic substrate according to any one of claims 1 to 4, The through hole has an inner side surface that is continuous from the first surface to the second surface, and the inner side surface is inclined at an angle of 80° to 89° with respect to the second surface.

6. The ceramic substrate according to any one of claims 1 to 5, The spherical diameter of the solid particles is smaller than the thickness of the substrate.

7. The ceramic substrate according to any one of claims 1 to 6, The solid particles are embedded in the conductive member.

8. The ceramic substrate according to any one of claims 1 to 7, The solid particles include at least one selected from the group consisting of diamond, silicon carbide, boron nitride, nanocarbon, copper and silver.

9. The ceramic substrate according to any one of claims 1 to 8, The solid particles are: Diamond particles, or Composite particles comprising diamond particles and a plating layer covering the diamond particles.

10. The ceramic substrate according to any one of claims 1 to 9, The conductive member includes sintered copper or sintered silver.

11. A light source device comprising: The ceramic substrate according to any one of claims 1 to 10, and A light emitting element having an element electrode, The conductive member of the ceramic substrate and the element electrode are electrically connected.

12. The light source device according to claim 11, The light emitting element is disposed on the second surface.

13. A method for manufacturing a ceramic substrate, comprising the following steps: a step of preparing a substrate having a first surface and a second surface opposite to the first surface, wherein the substrate has a through hole having a first opening diameter on the first surface larger than a second opening diameter on the second surface, a step of disposing one or more solid particles in the through hole from the first surface side, After the step of disposing the solid particles, a step of disposing a conductive paste in the through hole, and a step of sintering the conductive paste to form a conductive member continuous between the first surface and the second surface; The thermal conductivity of the solid particles is greater than the thermal conductivity of the conductive member.

14. The method for manufacturing a ceramic substrate according to claim 13, The second opening diameter is smaller than the spherical equivalent diameter of the solid particle.

15. The method for manufacturing a ceramic substrate according to claim 13 or 14, The step of preparing the substrate is a step of preparing a substrate with a film, wherein the substrate with a film comprises: a first film attached to the first surface and having a first opening at a position overlapping with the through hole, and a second film attached to the second surface and having a second opening at a position overlapping with the through hole. The process of preparing the conductive paste includes: a step of also disposing the conductive paste in the first opening and the second opening, Prior to the step of forming the conductive member, there is a step of peeling off the first film and the second film.

16. A method for manufacturing a light source device, comprising the following steps: A step of preparing a ceramic substrate manufactured by the method for manufacturing a ceramic substrate according to any one of claims 13 to 15, and a step of disposing a light emitting element having element electrodes on the ceramic substrate, In the step of arranging the light emitting element, the conductive member and the element electrode are electrically connected.

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