Device and method for sensor-based measurement of chemical and / or physical properties of an adhesive layer and / or medium contact with an adhesive layer, and method for producing corresponding device and method for sensor-

Abstract

A device (200) for sensor-based measurement of chemical and / or physical properties of an adhesive layer (203) in a device (100) for semiconductor technology, comprising: a first element (201) to be bonded, a second element (202) to be bonded, an adhesive layer (203), and a second element (202) to be bonded, the adhesive layer (203) integrally connects a first element (201) to be bonded and a second element (202) to be bonded by means of a first boundary surface (204) and by means of a second boundary surface (220), respectively, and a first sensor unit (205), characterized in that the first sensor unit (205) is arranged at least partially in or on the adhesive layer (203), the result is that all regions of one sensor unit (205) for measuring the chemical and / or physical properties of the adhesive layer (203) have at least one boundary surface (222), which is formed to the adhesive layer (203) in a mutually adhesively bonded manner.

Description

Technical Field

[0001] The present invention relates to a device for sensor-based measurement of chemical and / or physical properties of an adhesive layer and / or a medium in contact with the adhesive layer. The present invention also relates to a method for manufacturing a corresponding device. The present invention also relates to a method for measuring such properties of an adhesive layer and / or a medium in contact with the adhesive layer, in particular in a unit of an apparatus for semiconductor technology. The present invention also relates to a unit of an apparatus for semiconductor technology having a device according to the present invention. The present invention also relates to an apparatus for semiconductor technology, in particular a projection exposure apparatus for EUV semiconductor lithography, a projection exposure apparatus for DUV semiconductor lithography, a mask inspection apparatus, or a wafer inspection apparatus, in which an apparatus and method for sensor-based measurement of chemical and / or physical properties of an adhesive layer and / or a medium in contact with the adhesive layer are used. Background Art

[0002] In semiconductor technology, various microlithography methods are used, in particular, to produce microstructured and nanostructured elements as integrated circuits, wherein the structured properties are defined by irradiating a substrate with light. By way of example, projection exposure devices, which comprise, in particular, a radiation source, an illumination system, a photomask (referred to as a reticle) and a projection system, are used as devices for semiconductor technology. Such partial systems of devices for semiconductor technology, in particular projection exposure devices, are each composed of a separate optical unit which, starting from the radiation source, first transmits the light for lithography via the illumination system to the photomask and from there generates a corresponding image of the photomask on a photosensitive layer of the substrate by means of the projection system. The photosensitive layer can be a photoresist and the substrate can be a silicon wafer.

[0003] In order to be able to produce the smallest possible structures on a substrate in a projection exposure apparatus by microlithography, radiation sources with short-wavelength light from the so-called deep ultraviolet (DUV) wavelength range with a wavelength of 400 nm to 100 nm, in particular light with 365 nm, 248 nm and 193 nm, have been used for quite some time. Lenses and mirrors are used as optical components in the individual units of such projection exposure apparatuses in order to image the light from the radiation source onto the substrate. Furthermore, in order to produce even smaller structures, apparatuses have been used for several years which use particularly short-wavelength light from the so-called extreme ultraviolet (EUV) wavelength range with a wavelength between 0.1 nm and 30 nm, but which use in particular light of 13.5 nm. For such radiation, it is not possible to use transmissive optical units in the beam path of a projection exposure apparatus consisting of a plurality of units due to the intrinsic absorption of solids in this wavelength range. Therefore, reflective optical units are used exclusively in the case of EUV light. Similar optical units are also used in other devices for semiconductor technology, for example in mask inspection devices for EUV lithography or in wafer inspection devices for EUV lithography.

[0004] Such a unit for a device for semiconductor technology may include a plurality of individual components, in particular optical components as individual components, such as reflectors and lenses as described at the beginning, for imaging or irradiation masks, and also mechanical or electromechanical mountings for the optical components. Such optical components used, for example, in a unit for a device for semiconductor technology are held by mechanical or electromechanical elements in the form of mountings connected by an integral connection, and / or other types of elements are connected to the optical elements. In the case of an integral connection, the connection partners are held together by physical and / or chemical forces, for example by forming chemical bonds. An integral connection is a connection that cannot be easily released and can essentially only be separated by at least partial destruction of the connecting member and / or the connection partner. Adhesive bonding is an option for forming an integral connection. In addition to connecting the optical elements to the corresponding mountings in the device for semiconductor technology, other components in such a device are also interconnected by means of an integral connection.

[0005] Changes in the chemical and / or physical properties of the adhesive caused by changes in the chemical and / or physical properties of the medium surrounding the adhesive may lead to signs of aging of the corresponding adhesive layer, for example by oxidation, reduction or hydration of chemical components contained in the adhesive or mechanical damage in the adhesive layer, such as cracks. Such effects may lead to an impairment of the bonding effect of the adhesive. In the worst case, this may lead to at least partial detachment of the adhesive element, for example from the optical element or from a mount holding the optical element, and thus to a reduction in the performance of the unit, or even to a functional failure of the entire unit.

[0006] In addition, changes in the chemical and / or physical properties of the adhesive layer at the unit in the device for semiconductor technology may result in forces being exerted on the optical component, resulting in possible destructive deformations on the substrate and on the reflective surface of the optical component, or changes in the absolute position and / or orientation of the optical component in the beam path of the device for semiconductor technology.

[0007] With regard to adhesives for fixing optical components in mountings in devices for semiconductor technology, epoxy resins are often used, which expand or contract, for example by absorbing or emitting water from the surroundings and entering the surroundings, resulting in mechanical stresses on the adhesive layer, which can be transferred to the optical element held by the adhesive layer, or lead to an impairment of the adhesive effect of the adhesive layer. Changes in the ambient temperature of the adhesive, for example due to the operation of the device for semiconductor technology, due to accidents, maintenance, cleaning or renovation processes of the unit, can also lead to chemically or physically induced changes in the adhesive layer and can impair its chemical and / or physical properties. Likewise, mechanical stresses can be generated in the adhesive layer by the application and subsequent curing of the adhesive.

[0008] In order to ensure the reliability and performance of equipment for semiconductor technology, it is necessary to obtain information over the most comprehensive possible time period about the chemical and / or physical properties of the adhesive and / or media in contact with the adhesive layer, as well as information about the accompanying conditions within equipment for semiconductor technology, in particular within units of projection exposure equipment for EUV semiconductor lithography, in order to draw conclusions therefrom about the performance of the units and / or the equipment.

[0009] Different types of sensors are usually used to detect conditions prevailing in units of devices used in semiconductor technology by means of measurements and to draw conclusions therefrom about chemical and / or physical properties of the elements or individual components.

[0010] The prior art already discloses the practice of sensor-based monitoring of local changes of optical elements within a projection exposure apparatus, for example [DE 10 2018 219 782 A1 and DE 10 2018 208 653 A1]. In this way, common influencing parameters of the ambient medium, such as temperature and its temporal fluctuations, can be reliably monitored. Such methods often do not allow the determination of changes at points of the projection exposure apparatus that are physically difficult to access or are limited in terms of the applicability of sensor-based measurement methods. Furthermore, it becomes more difficult to apply such methods to units outside the projection exposure apparatus, with the result that, for example, renovation processes, maintenance or assembly processes cannot be directly monitored.

[0011] The prior art also discloses the use of sensors on optical elements, for example for monitoring mechanical stresses [DE 10 2020 2017 24 A1]. For example, in optical elements, this allows the targeted monitoring of mechanical stresses introduced by piezoelectric deformations. However, purely monitoring local parameters and / or properties of the isolation substrate does not allow any direct conclusions to be drawn, for example about the behavior, stability or service life of the adhesive layer on the element under changing corresponding environmental conditions. In addition, precise monitoring of the behavior of the adhesive layer under changing chemical and physical environmental conditions requires simultaneous direct and overall monitoring of the adhesive layer itself and the surrounding environment.

[0012] The solutions known from the prior art therefore do not adequately meet the increasingly stringent requirements, in particular with regard to monitoring the stability of adhesive layers in devices used in semiconductor technology. Summary of the invention

[0013] Purpose of the Invention

[0014] The object of the present invention is to provide a device that eliminates the above-mentioned disadvantages of the prior art. In particular, the object of the present invention is to provide a device for sensor-based measurement of chemical and / or physical properties of an adhesive layer and / or a medium in contact with the adhesive layer in a unit of an apparatus for semiconductor technology. Another object of the present invention is to specify a method for manufacturing such an apparatus. In addition, another object of the present invention is to specify a method for operating the proposed apparatus. The object of the present invention is also to specify a unit of an apparatus for semiconductor technology, in which a device for measuring the chemical and / or physical properties of an adhesive layer and / or a medium in contact with the adhesive layer according to the present invention is used. The object of the present invention is also to specify an apparatus for semiconductor technology, which comprises at least one device for sensor-based measurement of chemical and / or physical properties of an adhesive layer and / or a medium in contact with the adhesive layer. The apparatus for semiconductor technology may be a projection exposure apparatus for EUV semiconductor lithography, a projection exposure apparatus for DUV semiconductor lithography, a mask inspection apparatus or a wafer inspection apparatus.

[0015] Subject matter of the invention

[0016] The object on which the invention is based is achieved by a device and a method for providing the device, as well as a method for using the device for measurement purposes, each having the features of the independent claims, as well as a unit for a device for semiconductor technology having the device according to the invention, and finally a device for semiconductor technology having the device according to the invention. Further advantageous configurations of the invention are the subject matter of the dependent claims and of the exemplary embodiments of the invention described below.

[0017] In the explanation below (including the description of the drawings and the claims), a number such as "one" does not necessarily refer to a limitation to an exact one element, one component, one method, etc. On the contrary, multiple elements, components, processes or methods may also be provided, such as two, three or more. Any other number used here should not be interpreted as having an effect of limiting the existence of a limitation to the exact number of elements. On the contrary, unless otherwise stated, upward and downward numerical deviations are possible.

[0018] Other possible implementations of the present invention also include the above or below about the features described in the exemplary embodiment or the combination not explicitly mentioned of the embodiment. In this case, those skilled in the art will also add separate aspects as improvements or supplements to the corresponding basic forms of the present invention.

[0019] According to the device based on sensor measurement of the chemical and / or physical properties of the medium for adhesive layer and / or contact with the adhesive layer of the present invention, it is in the unit of the equipment for semiconductor technology, and the difference is that the device includes a first element to be bonded, a second element to be bonded, an adhesive layer of the first element to be bonded and the second element to be bonded integrally connected by corresponding boundary surfaces, and a first sensor unit. The feature of this device according to the present invention is that a first sensor unit is at least partially arranged in or on the adhesive layer, and as a result, all regions of a sensor unit for measuring the chemical and / or physical properties of the adhesive layer have at least one boundary surface, and the boundary surface is formed to the adhesive layer in a reciprocal adhesively connecting fashion. This is advantageous because the change of the chemical and / or physical properties of the adhesive layer can be directly measured at the point of action of the changed properties. In this case, the point of action can relate to an embodiment with any desired configuration, including a physically inaccessible position in the unit of the equipment for semiconductor technology, wherein the geometry of the elements used and the materials used do not constitute a restriction on the use of the device. By combining at least two such first sensor units and / or second sensor units at different locations, for example in the adhesive layer, spatially resolved conclusions about property changes in the adhesive layer can be obtained.

[0020] In a further embodiment of the device according to the invention, the first element to be bonded and the second element to be bonded are each, independently of one another, optical, mechanical, electromechanical, electrical or electronic elements. In particular, at least one of the elements to be bonded is made of a metallic material or of a ceramic material. As a result of the sensor-based measurement of chemical and / or physical properties at different locations within a unit of a device for semiconductor technology having different functions according to the invention, spatially resolved information about the changes is obtained, wherein corresponding conclusions about local loads and stability are obtained based on the local functions of the bonded elements.

[0021] In another embodiment of the device according to the invention, a first element to be bonded and / or a second element to be bonded is implemented as a reflector, a lens or an electromechanical reflector array. In addition, a first element to be bonded and / or a second element to be bonded is implemented as a mounting for a reflector, for a lens or for an electromechanical reflector array. In this case, the reflector has an optically effective surface, in particular a reflector surface, and a back side facing away from the optically effective surface, and at least one side, to which a first sensor unit and / or a second sensor unit and / or an adhesive layer are attached. In the case of a transmissive optical component, the adhesive layer and a first sensor unit and / or a second sensor unit are preferably located in the edge region of the optically transmissive material, directly adjacent to the mounting for the transmissive optical component. In this way, the influence on the operation of the device for semiconductor technology can be directly described.

[0022] In the case of at least two adhesive layers integrally connecting a first element to be bonded and a second element to be bonded, according to another embodiment of the present invention, the adhesive layers are separated by cavities. Therefore, the adhesive layers segmented in this way are not continuously extended, and each adhesive layer is spaced apart from each other in the same or different ways. In particular, the surface array of adhesive layers of different shapes is formed between the first element to be bonded and the second element to be bonded, and the surface array is designed with different forms and structures in a quasi-two-dimensional, grid-shaped or pattern-shaped manner. In this article, each adhesive layer has the same or different shape and thickness. By combining the measurement based on local sensors of the chemical and / or physical properties of the medium contacted with the structured adhesive layer and the adhesive layer and / or the adhesive layer, there is the advantage of direct local decoupling of sensor signals.

[0023] In addition, an adhesive layer can be in the form of a multi-component epoxy resin layer with two components. The adhesive layer in the form of a multi-component epoxy resin layer can also contain additional components in the form of a ceramic reinforcement component. In this case, the various parts of the additional ceramic reinforcement component can exist in a multi-faceted and different form and property distribution, such as the size distribution of ceramic particles. Mixtures of different ceramic compounds can also be used as ceramic reinforcement components.

[0024] Furthermore, a first sensor unit and / or a second sensor unit may each comprise at least one sensor, which contains all areas required to measure the chemical and / or physical property sought and all areas required to satisfy the measuring principle of the sensor. In particular, the sensor may comprise one of the following sensor types:

[0025] - force sensors, which are used to determine the effect of forces,

[0026] - Temperature sensor,

[0027] - pH sensor,

[0028] - Conductivity sensor,

[0029] - Capacitive sensors,

[0030] - Humidity sensor,

[0031] - Light sensor,

[0032] - and sensor types for combinations of at least two of the above signal types.

[0033] In general, however, this may involve any desired type of sensor for determining chemical and / or physical properties of the adhesive layer and / or the gaseous, liquid or solid medium. All available sensors are embodied such that they are employed as given in the apparatus for semiconductor technology with respect to the customary prevailing conditions of the adhesive layer in contact with the sensor and / or the medium in contact with the sensor, in particular with respect to temperature, ambient pressure and the use of customary inert gases or purge gases.

[0034] In another embodiment, the device according to the invention comprises a second sensor unit, wherein all areas of a second sensor unit for measuring the chemical and / or physical properties of a medium in contact with the adhesive layer have a boundary surface to the medium in contact with the adhesive layer. In this case, the medium surrounding a second sensor unit can have a liquid and / or gaseous embodiment. This can also be an aerosol. According to the invention, by using a first sensor unit and a second sensor unit installed directly adjacent to each other to measure the chemical and / or physical properties of the adhesive layer and / or other media surrounding a first sensor unit and a second sensor unit, it is possible to draw conclusions about the state of the respective media in contact and about the influence of the adhesive layer and / or the media on each other and their development over time.

[0035] According to another embodiment of the present invention, the one first sensor unit is connected to a first transmission unit and / or the one second sensor unit is connected to a second transmission unit.

[0036] According to another embodiment of the present invention, the one first transmission unit and / or the one second transmission unit respectively comprise a signal transmission element for transmitting an electrical signal and / or an electromagnetic signal and / or an optical signal, for example, a cable or an optical waveguide.

[0037] According to a further embodiment of the invention, the one first transmission unit and / or the one second transmission unit each contain an amplification element for amplifying the electrical and / or electromagnetic and / or optical signals. In this way, for example, even very weak signals can be reliably measured, transmitted and evaluated.

[0038] According to another embodiment, the one first transmission unit and / or the one second transmission unit respectively comprises a power transmission element for power transmission of the power required for operating the one first sensor unit and / or the one second sensor unit and all elements of the one first transmission unit and / or the one second transmission unit. For example, the power transmission element is a cable suitable for power transmission by means of direct current and / or alternating current.

[0039] In another embodiment of the present invention, the one first transmission unit is connected to a first transmission interface unit and / or the one second transmission unit is connected to a second transmission interface unit, and the one first transmission interface unit and / or the one second transmission interface unit each comprise a transmission interface for signal transmission and / or power transmission, for transmitting a measurement signal and / or power from a first sensor unit and / or a second sensor unit via the one first transmission unit and / or the one second transmission unit or transmitting the measurement signal and / or power to a first sensor unit and / or a second sensor unit. The transmission interface for transmitting signals from the one first transmission interface unit and from the one second transmission interface unit is advantageously implemented as a physical interface, for example by a plug, a socket, a clamp, an optical coupling element or any other conventional embodiment of a connection link for the signals used respectively. The transmission interface can also be implemented as a virtual interface by a transmitter / receiver unit for wireless signal transmission. In particular, this can involve signal transmission by means of electromagnetic radiation, and further in particular radio frequency transmission.

[0040] In an extension of the invention, a first transmission interface unit and / or a second transmission interface unit respectively comprise power storage and / or power supply elements. For example, this relates to power storage devices such as batteries, rechargeable batteries or similar elements. As power storage and power supply elements, a first transmission interface unit and / or a second transmission interface unit may also comprise elements for collecting the power required for the operation of the sensor unit and the transmission unit from an environmental area adjacent to a first transmission interface unit and / or a second transmission interface unit. In particular, this may be a device from the field of energy collection in order to ensure the autonomous function of the device. In the event of an interruption in the external power supply, the power storage and power supply elements may also be integrated as additional elements of the protection unit.

[0041] The method for manufacturing a device according to the invention basically comprises the following steps: 1) providing all elements according to the invention, 2) applying an adhesive layer to one of the provided elements, 3) embedding a first sensor unit in the adhesive layer, 4) integrally connecting the provided elements in a manner according to the invention.

[0042] Furthermore, the method for manufacturing the device according to the present invention comprises 5) providing and assembling a second sensor unit in the medium in contact with the adhesive layer.

[0043] Furthermore, the method comprises: 6) connecting the provided sensor unit to the provided transmission unit in a signal and power transmission manner, and 7) connecting the provided transmission unit to a provided first transmission interface unit and a provided second transmission interface unit in a signal and power transmission manner.

[0044] In a preferred variant of the method according to the invention, for the purpose of manufacturing a device as described above, a first element to be bonded, a second element to be bonded, a first sensor unit having an area of ​​a sensor suitable for measuring chemical and / or physical properties, and a suitable adhesive material for manufacturing an adhesive layer are first provided. In addition, an adhesive layer is applied to a first element to be bonded and / or a second element to be bonded. And, the first sensor unit is embedded in the adhesive layer. Embedding is either achieved at the boundary surface of a first element to be bonded to the adhesive layer, or at the boundary surface of a second element to be bonded to the adhesive layer, so that an adhesive layer fixes a first sensor unit, and the sensor of a first sensor unit contacts the adhesive layer, so that at least all areas of the sensor required to meet the measurement principle of the sensor form a boundary surface, which is formed to the adhesive layer in a manner integrally connected to each other. In this case, a first sensor unit protrudes from the adhesive layer, so that a first sensor unit can be connected to a first transmission unit in a signal and power transmission manner. Subsequently, the adhesive layer applied to a first member to be bonded or applied to at least one second member to be bonded and fixing a first sensor unit is integrally connected to a second member to be bonded via a boundary surface between the second member to be bonded and the adhesive layer, or integrally connected to a first member to be bonded via a boundary surface between the first member to be bonded and the adhesive layer. The adhesive layer is then cured.

[0045] In a variant of the method, in addition to or separately from the above method, an adhesive layer may be applied to a first sensor unit, still as an alternative to the above method, in order to improve adhesion of a first sensor unit in the adhesive layer and / or embed it in the adhesive layer.

[0046] For example, manual methods and any desired automatic or semi-automatic printing techniques serve as suitable methods for applying the adhesive layer, in particular screen printing, inkjet printing, micro-dosing of liquids or other customary alternatives.

[0047] In addition, other methods for forming an integral connection between a first element to be bonded and a second element to be bonded can be applied, for example welding, ceramic bonding or non-multi-component adhesives can be used to connect individual elements of a unit for a device for semiconductor technology. Likewise, different types of adhesive layers and methods for producing an integral connection can be used at different locations to bond two elements to each other.

[0048] In another embodiment of the method according to the invention, a first sensor unit and a second sensor unit are assembled in a unit for a device for semiconductor technology. In a first variant of this method, a first sensor unit is integrated in an adhesive layer in the unit in a manner according to the method of the preceding paragraph. In addition, at least one second sensor unit is provided and assembled in the same unit, so that the one second sensor unit is installed so that all areas of the one second sensor unit for measuring chemical and / or physical properties and fully satisfying the measurement principle form a boundary surface of the medium in contact with the adhesive layer, wherein the adhesive layer fixes the one first sensor unit. In this case, the assembly of at least one second sensor unit can be realized at positions and elements of the unit for a device for semiconductor technology that are suitable for the purpose and can be freely selected, so that the function of the unit is not impaired. As already mentioned above, the medium to be measured by a second sensor unit can refer to different types of ambient media.

[0049] In a further advantageous configuration of the method according to the invention, a first sensor unit and a second sensor unit, each of which is individually implemented according to the method described above, are connected in a signal- and power-transmitting manner to a first transmission unit and a second transmission unit, respectively. Furthermore, a first transmission unit and a second transmission unit produced according to the method described above are connected in a signal- and power-transmitting manner to at least one first transmission interface unit and a second transmission interface unit, respectively, in order to ensure signal transmission to an external data evaluation unit, which is not part of the invention.

[0050] The order in which a first sensor unit and a second sensor unit are provided and assembled is not necessarily relevant for the implementation of the method according to the invention and can be selected as desired.

[0051] As described above, connecting a first transmission interface unit to a first transmission unit and connecting a first transmission unit to a first sensor unit can be implemented in any order before, during or after assembling a first sensor unit in a unit of an apparatus for semiconductor technology, so as to increase the flexibility of assembly and the applicability of the sensor system during assembly. The same applies to the assembly of the one second transmission interface unit, the one second transmission unit and the one second sensor unit.

[0052] In another variant of the method, the signal and / or power transmission connection between the sensor unit and the transmission unit is established primarily for the application or embedding of the sensor unit on / in a first or second element. This allows increased flexibility when assembling the elements and the sensor and still applying the sensor during the assembly method step.

[0053] The first method for measuring the chemical and / or physical properties of an adhesive layer and / or a medium in contact with the adhesive layer with the aid of the above-mentioned device according to the present invention is distinguished in that, within a unit of an apparatus for semiconductor technology, information about the chemical and / or physical properties of the adhesive layer is measured at a boundary surface with the aid of a measurement signal generated by a first sensor unit, wherein the boundary surface is formed between all areas required to satisfy the measurement principle of the sensor of the sensor unit and the corresponding adhesive layer, and in that information about the chemical and / or physical properties of the medium is measured at a boundary surface with the aid of a measurement signal generated by a second sensor unit, wherein the boundary surface is formed between all areas required to satisfy the measurement principle of the sensor of the second sensor unit and the medium in contact with the adhesive layer, wherein the adhesive layer fixes the first sensor unit.

[0054] Another method for sensor-based measurement of chemical and / or physical properties of an adhesive layer and / or a medium in contact with the adhesive layer in a unit of a device for semiconductor technology according to the present invention is distinguished in that at least one first sensor unit and at least one second sensor unit generate a measurement signal that can be used to form any desired arithmetic combination of measurement signals from a first sensor unit and / or from a second sensor unit. In this case, the signals of at least one first sensor unit and at least one second sensor unit can also be evaluated on an individual basis. It is provided that the measurement signals from any first sensor unit embedded in the adhesive layer can be combined arithmetically. It is further provided that the measurement signals from the second sensor unit located outside the adhesive layer can be combined arithmetically. Similarly, the measurement signals from the sensor units within the adhesive layer can be combined arithmetically with the measurement signals from the sensor units outside the adhesive layer.

[0055] In a further embodiment of the method for sensor-based measurement of chemical and / or physical properties of at least one adhesive layer and / or a medium in contact with the adhesive layer in a unit of an apparatus for semiconductor technology, different forms of measurement signals, such as static measurement signals, dynamic measurement signals and / or any combination of static and dynamic measurement signals, are generated by a first sensor unit and a second sensor unit. Furthermore, the measurement signals can be detected in the form of triggers, both externally and internally of the unit of the apparatus for semiconductor technology.

[0056] According to another embodiment of the sensor-based measurement method of the chemical and / or physical properties of the adhesive layer in the unit of the device for semiconductor technology and / or the medium in contact with the adhesive layer, the measurement signal is always measured in the unit located outside the device for semiconductor technology. As a result, changes in the properties of the adhesive layer in the unit and / or the medium in contact with the adhesive layer can be determined, which changes are caused, for example, by cleaning work, maintenance work, assembly work on all optical and mechanical parts of the unit, or assembly work on the adhesive layer of at least one part of the unit during all other above-mentioned method steps. The naming of the working steps specified above should only be understood as exemplary in this case. In principle, the device according to the present invention can be used during all known work in the unit of the device for semiconductor technology or on the unit.

[0057] Another aspect of the invention relates to a unit for an apparatus for semiconductor technology, characterised in that the unit comprises a device according to the invention. The unit according to the invention can be composed of a plurality of elements, wherein the element can be a unit of optical elements, such as a reflector, a lens, a reflector array or a diffractive optical element. Another element of the unit can be a mechanical element, such as a mounting or a frame. Another element of the unit can be an electromechanical element and / or an electronic element. Furthermore, the unit can be composed of any combination of optical elements, mechanical elements and electromechanical and / or electronic elements.

[0058] A further aspect of the invention relates to a device for semiconductor technology, characterized in that the device for semiconductor technology comprises the apparatus according to the invention.

[0059] According to a first embodiment, the apparatus for semiconductor technology is a projection exposure apparatus for semiconductor lithography, in particular for EUV semiconductor lithography, further in particular for DUV semiconductor lithography.

[0060] According to another embodiment, the component is part of a wafer inspection apparatus for semiconductor lithography.

[0061] According to another embodiment, the component is part of a mask inspection apparatus for semiconductor lithography. BRIEF DESCRIPTION OF THE DRAWINGS

[0062] Exemplary embodiments and variants of the present invention will be explained in more detail below with reference to the accompanying drawings, in which:

[0063] Figure 1 A schematic meridional cross section showing a projection exposure apparatus for EUV microlithography, including source unit, illumination system, projection optics unit and individual mirror modules,

[0064] Figure 2 shows a schematic representation of a device according to the invention,

[0065] Figure 3 shows a schematic representation of another embodiment of the device according to the invention,

[0066] Figure 4 shows a schematic representation of another embodiment of the device according to the invention,

[0067] Figure 5 a schematic illustration showing a detailed view of a transmission unit in a further embodiment of the device according to the invention,

[0068] Figure 6 a schematic illustration showing a detailed view of a transmission interface unit in a further embodiment of the device according to the invention, and

[0069] Figure 7 A schematic block diagram of an exemplary embodiment of a method for producing a device according to the invention is shown. DETAILED DESCRIPTION

[0070] In the schematic diagram, Figure 1 The projection exposure device 100 for EUV semiconductor lithography is shown in an exemplary manner as an apparatus for semiconductor technology. The apparatus for semiconductor technology can also be a projection exposure apparatus for DUV semiconductor lithography. In addition, the apparatus for semiconductor technology can be a wafer inspection apparatus. The apparatus for semiconductor technology can also be a mask inspection apparatus.

[0071] The basic components of the projection exposure apparatus 100 for EUV semiconductor lithography are first referred to below. Figure 1 Described in an exemplary manner.

[0072] The embodiment of the illumination system 101 of the projection exposure apparatus 100 has, in addition to the radiation source 102, an illumination optical unit 103 for illuminating an object field 104 in an object plane 105. In an alternative embodiment, the light source 102 can also be provided as a module separate from the rest of the illumination system. In this case, the illumination system does not comprise the light source 102.

[0073] A reticle 106 arranged in the object field 104 is illuminated. The reticle 106 is held by a reticle holder 107. The reticle holder 107 is displaceable by means of a reticle displacement drive 108, in particular in at least one scanning direction.

[0074] For the purpose of explanation, Figure 1 The Cartesian xyz coordinate system is shown in FIG. The x direction extends perpendicular to the plane of the drawing. The y direction extends horizontally and the z direction extends vertically. The scanning direction is Figure 1 The z direction extends perpendicular to the object plane 105.

[0075] The projection exposure apparatus 100 further comprises a projection optical unit 109. The projection optical unit 109 serves to image the object field 104 into an image field 110 in an image plane 111. The image plane 111 extends parallel to the object plane 105. Alternatively, angles between the object plane 105 and the image plane 111 other than 0° are also possible.

[0076] The structures located on the reticle 106 are imaged onto a photosensitive layer of a substrate 112 arranged in the region of an image field 110 in an image plane 111. Typically, the substrate 112 is a wafer. The wafer 112 is held by a wafer holder 113. The wafer holder 113 can be displaced in at least one spatial direction, in particular longitudinally with respect to the y-direction, by means of a wafer displacement drive 114. The displacement of the reticle 106, firstly by means of the reticle displacement drive 108, and secondly by means of the wafer displacement drive 114, can be realized synchronously with one another.

[0077] The radiation source 102 is an EUV radiation source. In particular, the radiation source 102 emits EUV radiation 115, which is also referred to as used radiation, illumination radiation or illumination light in the following. In particular, the used radiation has a wavelength in the range between 5 nm and 30 nm. The radiation source 102 may be a plasma source, such as an LPP (laser produced plasma) source or a GDPP (gas discharge produced plasma) source. It may also be a synchrotron-based radiation source. The radiation source 102 may be a free electron laser (FEL).

[0078] The illumination radiation 115 emitted from the radiation source 102 is focused by the light collector 116. The light collector 116 may be a light collector having one or more elliptical and / or hyperbolic reflective surfaces. The illumination radiation 115 may be incident on at least one reflective surface of the light collector 116 at grazing incidence (GI) (that is, at an angle of incidence greater than 45° relative to the direction of the normal to the reflector surface) or at normal incidence (NI) (that is, at an angle of incidence less than 45°). The light collector 116 may be structured and / or coated, firstly to optimize its reflectivity for the radiation used and secondly to suppress extraneous light.

[0079] Downstream of the light collector 116, the illumination radiation 115 propagates through an intermediate focus in an intermediate focal plane 117. The intermediate focal plane 117 may represent a separation between a radiation source module having the radiation source 102 and the light collector 116 and the illumination optics unit 103.

[0080] The illumination optical unit 103 comprises a deflection mirror 118 and a first facet mirror 119 downstream of the deflection mirror 118 in the beam path. The deflection mirror 118 can be a plane deflection mirror or, alternatively, a mirror having a beam influencing effect that goes beyond a pure deflection effect. As an alternative or in addition, the deflection mirror 118 can be in the form of a spectral filter, which separates the used light wavelengths of the illumination radiation 115 from stray light of wavelengths deviating therefrom. If the first facet mirror 119 is arranged in a plane of the illumination optical unit 103 which is optically conjugate to the object plane 105 as a field plane, it is also referred to as a field facet mirror. The first facet mirror 119 comprises a plurality of individual first facets 120, which are also referred to as field facets in the following text. In Figure 1 Only a few of these facets 120 are shown in an exemplary manner.

[0081] The first facet 120 can be implemented in the form of a macro facet, in particular in the form of a rectangular facet or in the form of a facet having an arc-shaped peripheral contour or a peripheral contour of a part of a circle. The first facet 120 can be implemented as a plane facet, or alternatively as a convexly or concavely curved facet.

[0082] As known, for example, from [DE 10 2008 009 600 A1], the first facets 120 themselves can also each consist of a plurality of individual mirrors, in particular a plurality of micromirrors. The first facet mirrors 119 can in particular be in the form of a microelectromechanical system (MEMS system). For details, reference is made to [DE 10 2008 009600 A1].

[0083] The illuminating radiation 115 travels horizontally, that is to say in the y-direction, between the light collector 116 and the deflection mirror 118 .

[0084] In the beam path of the illumination optical unit 103, the second facet reflector 121 is arranged downstream of the first facet reflector 119. Provided that the second facet reflector 121 is arranged in the pupil plane of the illumination optical unit 103, it is also referred to as a pupil facet reflector. The second facet reflector 121 can also be arranged at a distance from the pupil plane of the illumination optical unit 103. In this case, the combination of the first facet reflector 119 and the second facet reflector 121 is also referred to as a specular reflector. Specular reflectors are known from [US 2006 / 0132747 A1], [EP 1 614 008 B1] and [US 6,573,978].

[0085] The second facet mirror 121 comprises a plurality of second facets 122. In the case of a pupil facet mirror, the second facets 122 are also referred to as pupil facets.

[0086] The second facets 122 can likewise be macroscopic facets, which can have, for example, a circular, rectangular or hexagonal circumference, or can alternatively be facets consisting of micromirrors. In this respect, reference is likewise made to [DE 10 2008 009 600 A1].

[0087] The second facet 122 may have a planar reflective surface, or alternatively a reflective surface with a convex or concave curvature.

[0088] The illumination optical unit 103 thus forms a two-facet system. This basic principle is also known as a fly's eye condenser (fly's eye integrator).

[0089] It may be advantageous to arrange the second facet mirror 121 not exactly in a plane optically conjugate to the pupil plane of the projection optical unit 109. In particular, the pupil facet mirror 121 may be arranged tilted relative to the pupil plane of the projection optical unit 109, as described, for example, in [DE 10 2017 220 586 A1].

[0090] The individual first facets 120 are imaged into the object field 104 using a second facet mirror 121. The second facet mirror 121 is the last beam-shaping mirror in the beam path upstream of the object field 104 or actually the last mirror for the illumination radiation 115.

[0091] In a further, not shown, embodiment of the illumination optical unit 103, a transfer optical unit may be arranged in the beam path between the second facet mirror 121 and the object field 104, which transfer optical unit in particular contributes to the imaging of the first facet 120 into the object field 104. The transfer optical unit may comprise exactly one mirror, or alternatively two or more mirrors, which are arranged consecutively in the beam path of the illumination optical unit 103. The transfer optical unit may in particular comprise one or two normal incidence mirrors (NI mirrors) and / or one or two grazing incidence mirrors (GI mirrors).

[0092] The projection exposure apparatus 100 comprises a plurality of mirrors Mi which are numbered consecutively according to their arrangement in the beam path of the projection exposure apparatus 100 .

[0093] exist Figure 1 In the embodiment shown, the illumination optics unit 103 comprises exactly three mirrors downstream of the collector 116 (M1 ), specifically a deflection mirror 118 (M2), a field facet mirror 119 (M3) and a pupil facet mirror 121 (M4).

[0094] In another embodiment of the illumination optical unit 103 , the deflection mirror 118 can also be omitted, and the illumination optical unit 103 can therefore then have exactly two mirrors downstream of the light collector 116 , in particular a first facet mirror 119 and a second facet mirror 121 .

[0095] The imaging of the first facet 120 into the object plane 105 by the second facet 122 or using the second facet 122 and the transfer optics is usually only an approximate imaging.

[0096] exist Figure 1 In the example shown, the projection optical unit 109 comprises six mirrors M6 to M11. Alternative solutions with four, eight, ten, twelve or any other number of mirrors Mi are also possible. The penultimate mirror M10 and the last mirror M11 each have a passage opening for the illumination radiation 115. The projection optical unit 109 is a secondary shielding optical unit. The projection optical unit 109 has an image side numerical aperture, which is greater than 0.5 and can also be greater than 0.6 and can be, for example, 0.7 or 0.75.

[0097] The reflective surface of the reflector Mi can be in the form of a free-form surface without an axis of rotational symmetry. Alternatively, the reflective surface of the reflector Mi can be designed as an aspherical surface with exactly one axis of rotational symmetry of the reflective surface shape. Just like the reflectors of the illumination optical unit 103, the reflector Mi can have a highly reflective coating for the illumination radiation 115. These coatings can be designed as multilayer coatings, in particular with alternating layers of molybdenum and silicon.

[0098] The projection optical unit 109 has a large object-image offset in the y direction between the y coordinate of the center of the object field 104 and the y coordinate of the center of the image field 110. In the y direction, this object-image offset can have approximately the same magnitude as the z distance between the object plane 105 and the image plane 111.

[0099] The projection optical unit 109 may in particular have a deformed form. In particular, it has different imaging ratios βx, βy in the x-direction and the y-direction. The two imaging ratios βx, βy of the projection optical unit 109 are preferably (βx, βy) = (+ / -0.25, + / -0.125). A positive imaging ratio β means imaging without image inversion. A negative sign of the imaging ratio β means imaging with image inversion.

[0100] The projection optical unit 109 thus results in a reduction in size in the x-direction (ie in a direction perpendicular to the scanning direction) by a ratio of 4:1.

[0101] The projection optical unit 109 results in a size reduction of 8:1 in the y direction, that is to say in the scanning direction.

[0102] Other imaging ratios are likewise possible. Imaging ratios with the same sign and the same absolute value in the x-direction and the y-direction are also possible, for example with an absolute value of 0.125 or 0.25.

[0103] The number of intermediate image planes in the x-direction and in the y-direction in the beam path between the object field 104 and the image field 110 may be the same or may differ depending on the embodiment of the projection optical unit 109. Examples of projection optical units with a different number of such intermediate images in the x- and y-direction are known from [US 2018 / 0074203A1].

[0104] In each case, one of the pupil facets 122 is assigned to exactly one of the field facets 120 to form a corresponding illumination channel for illuminating the object field 104. In particular, this can result in The far field is decomposed into a plurality of object fields 104 by means of field facets 120. The field facets 120 generate a plurality of images of the intermediate focus on the pupil facets 122 respectively assigned thereto.

[0105] By means of the assigned pupil facets 122, the field facets 120 are imaged onto the reticle 106 in each case in a manner overlapping one another for the purpose of illuminating the object field 104. The illumination of the object field 104 is in particular as homogeneous as possible. It preferably has a homogeneity error of less than 2%. Field homogeneity can be achieved by overlapping the different illumination channels.

[0106] The illumination of the entrance pupil of the projection optical unit 109 can be geometrically defined by the arrangement of pupil facets. The intensity distribution in the entrance pupil of the projection optical unit 109 can be set by selecting the illumination channels (particularly subsets of pupil facets) through which the light is guided. This intensity distribution is also called an illumination setting.

[0107] An equally preferred pupil homogeneity in the region of a segment of the illumination pupil of the illumination optical unit 103 which is illuminated in a defined manner can be achieved by redistribution of the illumination channels.

[0108] Further aspects and details of the illumination of the object field 104 and in particular the entrance pupil of the projection optical unit 109 are described below.

[0109] The projection optical unit 109 may in particular have a concentric entrance pupil. The latter may be accessible. It may also be inaccessible.

[0110] The entrance pupil of the projection optical unit 109 cannot generally be accurately illuminated by the pupil facet mirror 121. When the projection optical unit 109 is imaged, the aperture rays generally do not intersect at a single point, and the projection optical unit 109 images the center of the pupil facet mirror 121 telecentrically onto the wafer 112. However, a surface region can be found where the spacing of the aperture rays determined in pairs is minimal. This surface region represents the entrance pupil or a region in real space conjugate therewith. In particular, this surface region has a finite curvature.

[0111] The projection optical unit 109 may have different positions of the entrance pupil for the tangential beam path and for the sagittal beam path. In this case, an imaging element, in particular an optical component of the transfer optical unit, should be provided between the second facet mirror 121 and the reticle 106. With the aid of this optical element, different attitudes of the tangential entrance pupil and the sagittal entrance pupil can be taken into account.

[0112] exist Figure 1 In the arrangement of components of the illumination optical unit 103 shown, the pupil facet mirror 121 is arranged in a region conjugate to the entrance pupil of the projection optical unit 109. The field facet mirror 119 is tilted relative to the object plane 105. The first facet mirror 119 is tilted relative to the arrangement plane defined by the deflection mirror 118.

[0113] The first facet mirror 119 is inclined relative to an arrangement plane defined by the second facet mirror 121 .

[0114] Figure 2 A first exemplary embodiment of a device 200 for sensor-based measurement of chemical and / or physical properties of adhesive layers within devices for semiconductor technology is shown. In the embodiment shown, two elements 201 and 202 are connected to one another at respective boundary surfaces 204 and 220 via an adhesive layer 203. The elements 201 and 202 can in each case independently of one another be optical, mechanical, electromechanical or electronic elements.

[0115] In a particular embodiment, one of the elements 201 and 202 to be bonded is an optical element, and the respective other element is a mechanical element, such as a mounting. In an alternative embodiment, the elements 201 and 202 to be bonded can also be of the same type. In principle, there are no restrictions on the applicability of the device according to the invention for the choice of the type of elements 201 and 202 to be bonded. This applies to all embodiments shown below that contain elements 201 and 202 to be bonded.

[0116] The first sensor unit 205 is embedded in the adhesive layer 203 so that all areas relevant for satisfying the measurement principle of one first sensor unit 205 form the boundary surface of the adhesive layer 203. Thus, one first sensor unit 205 is partially surrounded by the adhesive layer 203 and is installed between the boundaries 204 and 220. In the embodiment shown, one first sensor unit 205 is suitable for measuring a measurement signal related to the chemical and / or physical properties of the adhesive layer 203, which is arranged between the elements 201 and 202 to be bonded and integrally connects the elements 201 and 202 to be bonded to each other. If the chemical and / or physical properties of the adhesive layer 203 change, conclusions about the properties of the adhesive layer 203 can be drawn, for example in order to evaluate the stability of the adhesive layer 203.

[0117] In further embodiments, a plurality of sensor units 205 may be integrated in the adhesive layer 203 , such that the determined sensor signal allows chemical and / or physical properties of the adhesive layer 203 to be spatially resolved.

[0118] In, for example, cells M1-M11, the adhesive layer 203 is at least partially in contact with a medium 209. The medium 209 may have different chemical and / or physical properties, conditions and compositions. For example, the medium 209 may contain gaseous and liquid components or aerosols and may have a temperature in a wide temperature range relative to standard conditions. The temperature is preferably measured in the range of 173K-500K, in particular 250K-400K. In particular, the medium 209 may consist entirely or partially of a gaseous medium such as nitrogen, carbon dioxide, a noble gas and water or hydrogen. The medium 209 may also contain components of organic compounds, for example solvents from the adhesive layer 203 or from a cleaning process. Alternatively, the medium may be a medium to which a variable negative or positive pressure compared to standard conditions may be applied, compared to the cell medium surrounding the cells M1-M11. Preferably, 10 -6 mbar to 2 bar, especially 10 -4 mbar to 2 bar, further in particular 10 -2 Pressures from mbar to 2 bar.

[0119] The first sensor unit 205 is connected in a signal and power transmission manner via the first transmission unit 207 to a first transmission interface unit 208. Furthermore, the device 200 comprises a first transmission interface unit 208 for transmitting a signal measured by a first sensor unit 205 to a suitable transmission element outside the units M1-M11.

[0120] Figure 3 Another exemplary embodiment of the apparatus 200 is shown, Figure 2Compared to the variant depicted in FIG. 2 , the device 200 includes a first sensor unit 205 and a second sensor unit 217. In this case, the first sensor unit 205 is in contact with the adhesive layer 203, while a second sensor unit 217 is in contact with the medium 209. In this case, a first sensor unit 205 is similar to Figure 2 The embodiment of the present invention is configured in a manner as described above and thus measures the chemical and / or physical properties of an adhesive layer 203, which is partially located between a first element 201 to be bonded and a second element 202 to be bonded. In contrast, a second sensor unit 217 is positioned within the unit M1-M11 in such a way that all areas of a second sensor unit 217 required to fulfill the measurement principle of a first sensor unit 205 are in contact with the medium 209.

[0121] A second sensor unit 217 is likewise connected via a second transmission unit 218 and furthermore via a second transmission interface unit 219 , so that signals from a second sensor unit 217 can be transmitted to regions of the units M1 - M11 located outside in a signal and power transmission manner.

[0122] In a particular embodiment, a second sensor unit 217 is mounted in such a way that the medium 209 surrounding the second sensor unit 217 is arranged in the direct vicinity of the adhesive layer 203 including the first sensor unit 205. In this embodiment, the measurements obtained from a first sensor unit 205 and a second sensor unit 217 thus allow a direct comparison and correlation between chemical and / or physical properties measured within the adhesive layer 203 and outside the medium 209 in contact with the adhesive layer.

[0123] In this case, one first sensor unit 205 and one second sensor unit 217 can measure every possible combination of static and / or dynamic measurement signals, with the result that the development of chemical and / or physical properties over time can be tracked. In another specific variant of the illustrated embodiment, a different number and spatial arrangement of one first sensor unit 205 and one second sensor unit 217 are used in order to obtain a spatial resolution of the chemical and / or physical properties of both the adhesive layer 203 and the medium 209 surrounding the adhesive layer 203.

[0124] Figure 4Another exemplary embodiment of a device 200 is shown, wherein for the sake of clarity, a first transmission unit 207 and a first transmission interface unit 208 are not shown. In the illustrated embodiment, a first element 201 to be bonded and a second element 202 to be bonded are connected by a plurality of adhesive layers 203, in each case by a boundary surface 204 and a boundary surface 220. In this case, a first adhesive layer 203 contains a first sensor unit 205 with a sensor 206 shown in an exemplary manner, which is surrounded by the adhesive layer 203 in all areas of a first sensor unit 205 required to meet the measuring principle of the sensor 206. A first sensor unit 205 may include a plurality of such sensors 206, which can be in contact with different spatial regions of the adhesive layer 203 and can have a freely selectable spacing and orientation relative to each other. As described above, a plurality of such sensor units 205 can also be used in the same adhesive layer 203 or in freely selectable different adhesive layers 203. The individual adhesive layers 203 are spaced apart from each other, wherein the spacing between two corresponding individual adhesive layers 203 does not necessarily need to be the same. A cavity 216, which is usually filled with a gaseous medium, is formed between the adhesive layers 203. However, a liquid and / or gaseous medium and / or an aerosol may also be present in the cavity 216 at least at some time. This applies in particular to applications known from the prior art involving work on and with devices for semiconductor technology and / or individual components thereof, which include cleaning work, refurbishment work, assembly work, maintenance work or different types of events. For example, refurbishment work on elements of a projection exposure device is described in [NL2010626A1, US11340532].

[0125] Depending on the precise shape of the elements 201 and 202 to be bonded, the corresponding layer thickness of the adhesive layer 203 does not need to be the same. In the wide embodiment of the cross-sectional view shown, a quasi-two-dimensional array of adhesive layers 203 is formed, which connects the elements 201 and 202 to be bonded. In this case, separate adhesive layers 203 can exist isolated from each other. In alternative embodiments, adhesive layers 203 can be connected to each other at least in part. In special limiting cases, separate adhesive layers 203 can contact each other in a manner to form a continuous adhesive layer 203. The shape, structured degree and local thickness of adhesive layer 203 can vary, and usually depend at least in part on the application of the adhesive layer 203 described at the beginning, and can be set by the latter.

[0126] Figure 5Another exemplary embodiment of a part of a device 200 is shown, in which a first sensor unit 205 is connected to a transmission interface unit 208 via a first transmission unit 207. In this case, the first transmission unit 207 is composed of a plurality of signal transmission elements 210 and power transmission elements 212. The signal transmission elements 210 can be used to transmit electrical signals and / or electromagnetic signals and / or optical signals. The signal transmission elements 210 can be cables or optical waveguides. The signal transmission elements 210 transmit signals detected by a first sensor unit 205 to a first transmission interface unit 208. The signal transmission elements 210 can also be used to trigger functions of the first sensor unit 205, for example by transmitting an externally provided trigger pulse to a first sensor unit 205 via a first transmission interface unit 208 and a first signal transmission element 210 and processing the trigger pulse there.

[0127] In the embodiment shown, a first transmission unit 207 further comprises an amplifying element 211. In this case, the amplifying element 211 records the signal of a first sensor unit 205 via the signal transmission element 211 and transmits the signal in an amplified form via the signal transmission element 210 to a first transmission interface unit 208. In this case, the power required to operate the amplifying element 211 is provided by the power transmission element 212.

[0128] Figure 6 Another exemplary embodiment of a part of the device 200 is shown, in which a first transmission interface unit 208 includes additional elements. A first transmission interface unit 208 may include at least one transmission interface 213 for signal transmission and / or at least one transmission interface 214 for power transmission. In this case, the transmission interface 213 for signal transmission and / or the transmission interface 214 for power transmission may have the physical or virtual characteristics of the configuration described above. In addition, a first transmission interface unit 208 may have a power storage and power supply element 221. The power storage and power supply element 221 may provide the power required to operate a first sensor unit 205 and / or a second sensor unit 217 and a first transmission unit 207. In a variant, this is a physical transmission interface 214 for power transmission to a power source located outside the unit M1-M11. In another variant, the power source may be a power storage unit in the form of a battery or a rechargeable battery. In another specific variation, the power source may be an energy harvesting element that receives energy in various raw energy forms, such as heat, vibration, light, or flow energy, from the medium 215 and converts the energy into electrical energy.

[0129] Figure 7A schematic block diagram of an embodiment of a method according to the invention is shown for manufacturing an apparatus 200 for measuring chemical and / or physical properties of an adhesive layer 203 and / or a medium 209 in contact with the adhesive layer as explained above in a unit of a projection exposure apparatus for semiconductor lithography.

[0130] In the first embodiment, firstly, a first sensor unit 205, a first element 201 to be bonded, a second element 202 to be bonded and an adhesive material are provided (S1). Subsequently, an adhesive layer 203 is applied to the elements 201 and / or 202 to be bonded by means of a suitable method (S2), and a first sensor unit 205 is embedded in the adhesive layer 203 (S3), so that the adhesive layer 203 fixes the first sensor unit 205, and the sensor 206 of the first sensor unit 205 is in contact with the adhesive layer 203, so that the region of the sensor 206 suitable for measuring chemical and / or physical properties has a boundary surface formed to the adhesive layer 203 in a reciprocal integral connection manner, the first sensor unit 205 at least partially protrudes from the adhesive layer 203, and a subsequent connection link to the first transmission unit 207 is made possible. Subsequently, the elements 201 and 202 to be bonded are integrally connected by the adhesive layer 203, and the adhesive layer is cured (S4).

[0131] In another embodiment of the method, at least one first sensor unit 205 and at least one second sensor unit 217 are used within the unit M1-M11 in order to measure the chemical and / or physical properties of at least one adhesive layer 203 and / or the medium 209. In this context, a first sensor unit 205 is assembled by means of the method (S1-S4) described at the beginning. In contrast, a second sensor unit 217 is initially provided and assembled outside the adhesive layer 203 (S5), so that all areas of a second sensor unit 217 for measuring chemical and / or physical properties and fully satisfying the measuring principle form the boundary surface of the medium 209 in contact with the adhesive layer 203, wherein the adhesive layer 203 fixes a first sensor unit 205. In this case, the assembly of at least one second sensor unit 217 can be realized at positions and elements of the unit M1-M11 of the device for semiconductor technology that are suitable for the purpose and can be freely selected, so that the function of the unit M1-M11 is not impaired. As already mentioned above, the medium 209 to be measured by a second sensor unit 219 can refer to different types of ambient media.

[0132] Finally, a first transmission unit 209 and a second transmission unit 216 (S6) and a first transmission interface unit 208 and a second transmission interface unit 219 (S7) are connected to a first sensor unit 205 and a second sensor unit 217 bonded thereto in a signal and power transmission manner, respectively.

[0133] This method can be used to manufacture a device 200 each having a plurality of first sensor units 205 in the same adhesive layer 203 , or to manufacture a plurality of devices 200 each having a first sensor unit 205 in an adhesive layer 203 .

[0134] Reference numerals list

[0135] 100 Projection exposure equipment

[0136] 101 Lighting System

[0137] 102 Radiation Source

[0138] 103 Illumination optical unit

[0139] 104 Material Field

[0140] 105 Object Plane

[0141] 106 Mask Master

[0142] 107 Reticle Master Holder

[0143] 108 Mask Master Displacement Driver

[0144] 109 Projection Optics Unit

[0145] 110 Image Field

[0146] 111 Image plane

[0147] 112 Chip

[0148] 113 Wafer Holder

[0149] 114 Chip Displacement Driver

[0150] 115 EUV Radiation

[0151] 116 light collector

[0152] 117 Intermediate focal plane

[0153] 118 Deflecting mirror

[0154] 119 Faceted Mirror

[0155] 120 facets

[0156] 121 Faceted Mirror

[0157] 122 Facets

[0158] 200 Installations

[0159] 201 First component to be bonded

[0160] 202 Second component to be bonded

[0161] 203 Adhesive layer

[0162] 204 First boundary surface

[0163] 205 First sensor unit

[0164] 206 Sensors

[0165] 207 First Transmission Unit

[0166] 208 first transmission interface unit

[0167] 209 Medium

[0168] 210 Signal transmission element

[0169] 211 Amplifier

[0170] 212 Power transmission components

[0171] 213 Transmission interface for signal transmission

[0172] 214 Transmission interface for power transmission

[0173] 215 Medium

[0174] 216 cavity

[0175] 217 Second sensor unit

[0176] 218 Second transmission unit

[0177] 219 Second transmission interface unit

[0178] 220 Second boundary surface

[0179] 221 Power storage and power supply components

[0180] 222 Boundary Surface

[0181] 223 Boundary Surface

[0182] S1-S7 Method Steps

[0183] Units of the M1-M11 projection exposure system

Claims

1. Device 200 for sensor-based measurement of chemical and / or physical properties of an adhesive layer 203 in a device 100 for semiconductor technology, include A first component 201 to be bonded, a second component 202 to be bonded, an adhesive layer 203 integrally connecting the first element 201 to be bonded and the second element 202 to be bonded via the first boundary surface 204 and via the second boundary surface 220, respectively, and a first sensor unit 205, It is characterized in that The one first sensor unit 205 is at least partially arranged in or on the adhesive layer 203, with the result that all areas of the one sensor unit 205 for measuring the chemical and / or physical properties of the adhesive layer 203 have at least one boundary surface 222, which is formed to the adhesive layer 203 in a mutually adhesively connected manner.

2. The device 200 according to claim 1, It is characterized in that The one first element 201 to be bonded and / or the one second element 202 to be bonded are each independently configured as an optical element, a mechanical element, an electromechanical element, an electrical element or an electronic element.

3. The device 200 according to any one of the preceding claims, It is characterized in that The first element 201 to be bonded and / or the second element 202 to be bonded are implemented as a mirror, a lens or an electromechanical mirror array, and / or The one first element 201 to be bonded and / or the one second element 202 to be bonded is embodied as a mounting for a mirror, for a lens or for an electromechanical mirror array.

4. The device 200 according to any one of the preceding claims, It is characterized in that In case there are at least two adhesive layers 203 integrally connecting the one first element 201 and the one second element 202 , the adhesive layers 203 are separated by cavities 216 .

5. The device 200 according to any one of the preceding claims, It is characterized in that The device 200 comprises a second sensor unit 217 , wherein the entire area of ​​the second sensor unit 217 is used to measure chemical and / or physical properties of a medium 209 in contact with the adhesive layer 203 , and has a boundary surface 223 with respect to the medium 209 in contact with the adhesive layer 203 .

6. The device 200 according to any one of the preceding claims, It is characterized in that - said one first sensor unit 205 is connected to a first transmission unit 207, and / or The one second sensor section 217 is connected to one second transmission unit 218 .

7. The device 200 according to claim 6, It is characterized in that The one first transmission unit 207 and / or the one second transmission unit 218 each include a signal transmission element 210 for transmitting an electrical signal and / or an electromagnetic signal and / or an optical signal.

8. The device 200 according to claim 6 or 7, It is characterized in that The one first transmission unit 207 and / or the one second transmission unit 218 each include an amplifier element 211 for amplifying electrical signals and / or electromagnetic signals and / or optical signals.

9. The device 200 according to any one of claims 6 to 8, It is characterized in that The one first transmission unit 207 and / or the one second transmission unit 218 each include a power transmission element 212, which is used to transmit the power required to operate the one first sensor unit 205 and / or the one second sensor unit 217 and all elements of the one first transmission unit 207 and / or the one second transmission unit 218.

10. The device 200 according to any one of claims 6 to 9, It is characterized in that - the first transmission unit 207 is connected to a first transmission interface unit 208, and / or - said one second transmission unit 218 is connected to a second transmission interface unit 219, The first transmission interface unit 208 and / or the second transmission interface unit 219 each include: a transmission interface unit 213 for signal transmission and / or a transmission interface unit 214 for power transmission, for transmitting a measurement signal and / or power from or to the one first sensor unit 205 via the one first transmission unit 207 and / or from or to the one second sensor unit 217 via the one second transmission unit 218, and / or - Power storage and / or power supply element 221 .

11. A method for manufacturing a device 200 according to any one of claims 1 to 10, comprising: (S1) providing a first sensor unit 205 having an area of ​​a first sensor 206 suitable for measuring chemical and / or physical properties, and providing a first element 201 to be bonded, providing a second element 202 to be bonded, and providing an adhesive material to produce an adhesive layer 203, - (S2) applying an adhesive layer 203 to a first element 201 to be bonded and / or a second element 202 to be bonded, - (S3) embedding the one first sensor unit 205 in the adhesive layer 203, so that the adhesive layer 203 fixes the one first sensor unit 205, and the sensor 206 of the one first sensor unit 205 is in contact with the adhesive layer 203, so that the area of ​​the sensor 206 suitable for measuring chemical and / or physical properties has a boundary surface, which is formed to the adhesive layer 203 in a manner integrally connected to each other, and the one first sensor unit 205 at least partially protrudes from the adhesive layer 203, - (S4) integrally connecting the adhesive layer 203 holding the one first sensor unit 205, a. on a first element 201, which is bonded to a second element 202 via a second boundary surface 220 of the second element 202 to be bonded to the adhesive layer 203, and curing the adhesive layer 203 to be bonded to a second element 202 to be bonded, or b. On a second member 202 , it is bonded to a first member 201 to be bonded via a first boundary surface 204 of a first member 201 to be bonded to an adhesive layer 203 , and curing the adhesive layer 203 .

12. A method for manufacturing the device 200 according to claim 11, comprising: -Providing and assembling a second sensor unit 217 (S5) so that the second sensor unit 217 is implemented so that all areas of the second sensor unit 217 for measuring chemical and / or physical properties form a boundary surface of an environmental medium 209, and the environmental medium 209 contains an adhesive layer 203 that fixes the first sensor unit 205.

13. A method for manufacturing the device 200 according to claim 11 or 12, comprising: - (S6) connecting the one first sensor unit 205 to the one first transmission unit 207 and / or connecting the one second sensor unit 217 to the one second transmission unit 118 in a signal and power transmission manner, -(S7) connecting the one first transmission unit 207 to the one first transmission interface unit 208 and / or connecting the one second transmission unit 218 to the one second transmission interface unit 219 in a signal and power transmission manner.

14. A method for sensor-based measurement of chemical and / or physical properties of an adhesive layer 203 and / or a medium 209 in contact with the adhesive layer 203 in a device 100 for semiconductor technology by means of a device 200 according to any one of claims 1 to 10.

15. The method according to claim 14, characterized in that The two first sensor units 205 or the two second sensor units 217 or respectively one first sensor unit 205 and one second sensor unit 217 generate measurement signals which are used to form any desired arithmetic combination of measurement signals.

16. The method according to claim 14 or 15, It is characterized in that A first sensor unit 205 and / or a second sensor unit 217 generates measurement signals of the following type: - static measurement signal, - Dynamic measurement signals, - Any desired combination of static and dynamic measurement signals.

17. The method according to any one of claims 14 to 16, It is characterized in that The chemical and / or physical properties of the adhesive layer 203 and / or the medium 209 in contact with the adhesive layer 203 within the units M1-M11 of the device 100 for semiconductor technology can be measured at any time in the units M1-M11 located outside the device 100 for semiconductor technology for monitoring and controlling the following operations: - cleaning work and / or renovation processes, -Maintenance work - assembly work of all the optical and mechanical components of the units M1-M11, - Assembly work carried out on the adhesive layer 203 of the components of the units M1 - M11 during all the method steps described in claims 11 to 13 .

18. A unit M1-M11 of a device 100 for semiconductor technology, It is characterized in that One of the units M1 - M11 comprises a device 200 according to any one of claims 1 to 10 .

19. A semiconductor technology device 100, It is characterized in that A device 100 for semiconductor technology comprises a device 200 according to any one of claims 1 to 10 .

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