Semiconductor light emitting device package and display apparatus

Abstract

The semiconductor light emitting device package includes a common connection electrode having a first region and a second region; a first semiconductor light emitting device on the first region of the common connection electrode; a pair of assembly wirings on the second region of the common connection electrode; and a second semiconductor light emitting device on the pair of assembly wirings.

Description

Technical Field

[0001] The embodiments relate to a semiconductor light emitting device package and a display device. Background Art

[0002] Large-area displays include liquid crystal displays (LCD), OLED displays, and micro-LED displays (Micro-LED displays).

[0003] The micro LED display is a display using a semiconductor light emitting device, ie, micro LED, having a diameter or a cross-sectional area of ​​100 μm or less as a display device.

[0004] Micro LED displays use micro LEDs, which are semiconductor light-emitting devices, as display devices, so they have excellent performance in many characteristics such as light-to-dark ratio, response speed, color reproduction rate, viewing angle, brightness, resolution, lifespan, luminous efficiency or brightness.

[0005] In particular, the micro-LED display can separate and combine screens in a modular manner, thereby having the advantages of free adjustment of size or resolution and the ability to achieve a flexible display.

[0006] However, a large-scale micro-LED display requires more than several million micro-LEDs, and thus there is a technical problem that it is difficult to quickly and accurately transfer the micro-LEDs to the display panel.

[0007] Recently developed transfer technologies include pick and place process, laser lift-off method or self-assembly method.

[0008] Among them, the self-assembly method, as a method for semiconductor light-emitting devices to find assembly positions in a fluid by themselves, is a method that is conducive to realizing large-screen display devices.

[0009] However, research on the technology of manufacturing displays through self-assembly of micro-LEDs is still incomplete.

[0010] In particular, in the prior art, when rapidly transferring millions of semiconductor light-emitting devices to a large display, although the transfer speed can be increased, the transfer error rate may increase, thereby causing a technical problem of lowering the transfer yield.

[0011] In the related art, although a transfer process using a self-assembly method of dielectrophoresis (DEP) has been attempted, there is a problem of low self-assembly rate due to the non-uniformity of the dielectrophoresis force (DEP force).

[0012] On the other hand, in the self-assembly method, the red light-emitting device, the green light-emitting device, and the blue light-emitting device are individually subjected to the placement process, the assembly process, and the recycling process, so there is a problem that the process time is very long. In addition, when the light-emitting device that has not been recycled in the previous process is assembled with other light-emitting devices, the light-emitting devices emitting light of other colors are assembled into a specific color area, resulting in color mixing, and it is difficult to achieve full color.

[0013] On the other hand, since red, green, and blue light-emitting devices need to be arranged on pixels of a display substrate, it is difficult to reduce the size of the pixels, thereby causing a problem of difficulty in achieving ultra-high resolution. Summary of the invention

[0014] Problems to be solved by the invention

[0015] Embodiments are directed to solving the aforementioned problems and other problems.

[0016] Another object of the embodiment is to provide a light emitting device package and a display device capable of improving assembly speed.

[0017] In addition, another object of the embodiment is to provide a light emitting device package and a display device capable of preventing poor color mixing.

[0018] In addition, another object of the embodiment is to provide a light emitting device package and a display device capable of achieving ultra-high resolution.

[0019] The technical problems of the embodiments are not limited to the technical problems described in the summary of the invention, but also include technical problems that can be understood through specific implementation.

[0020] Technical solutions to the problem

[0021] In order to achieve the above or other purposes, according to one aspect of an embodiment, a semiconductor light-emitting device package includes: a common connection electrode having a first area and a second area; a first semiconductor light-emitting device located on the first area of ​​the common connection electrode; a pair of first assembly wirings located on the second area of ​​the common connection electrode; and a second semiconductor light-emitting device located on the pair of first assembly wirings.

[0022] The semiconductor light emitting device package may include a third semiconductor light emitting device on the pair of first assembly wirings.

[0023] The common connection electrode may have a third region; the second region may be located between the first region and the third region. In this case, the semiconductor light emitting device package may include: a fourth semiconductor light emitting device located on the third region of the common connection electrode; and a fifth semiconductor light emitting device and a sixth semiconductor light emitting device located on the pair of first assembly wirings.

[0024] The first semiconductor light emitting device and the fourth semiconductor light emitting device may be red semiconductor light emitting devices; the second semiconductor light emitting device and the fifth semiconductor light emitting device may be green semiconductor light emitting devices; the third semiconductor light emitting device and the sixth semiconductor light emitting device may be blue semiconductor light emitting devices.

[0025] The first semiconductor light emitting device, the second semiconductor light emitting device, and the third semiconductor light emitting device may constitute a first pixel; and the fourth semiconductor light emitting device, the fifth semiconductor light emitting device, and the sixth semiconductor light emitting device may constitute a second pixel.

[0026] The first semiconductor light emitting device, the second semiconductor light emitting device, and the third semiconductor light emitting device may constitute a pixel; and the fourth semiconductor light emitting device, the fifth semiconductor light emitting device, and the sixth semiconductor light emitting device may constitute a virtual pixel.

[0027] The second semiconductor light emitting device, the third semiconductor light emitting device, the fifth semiconductor light emitting device, and the sixth semiconductor light emitting device may be disposed between the first semiconductor light emitting device and the fourth semiconductor light emitting device.

[0028] The third semiconductor light emitting device and the sixth semiconductor light emitting device may be disposed between the second semiconductor light emitting device and the fifth semiconductor light emitting device.

[0029] The common connection electrode can be connected to the lower side of each of the first semiconductor light emitting device and the fourth semiconductor light emitting device; the common connection electrode can be connected to the lower side of each of the second semiconductor light emitting device, the third semiconductor light emitting device, the fifth semiconductor light emitting device and the sixth semiconductor light emitting device between the pair of first assembly wirings.

[0030] The common connection electrode may be connected to the lower side of each of the pair of first assembled wirings.

[0031] The semiconductor light emitting device package may include: a first common pad located at one side of the first semiconductor light emitting device; and a second common pad located at one side of the fourth semiconductor light emitting device.

[0032] The first common pad may be connected to a first built-up wiring in the pair of first built-up wirings; and the second common pad may be connected to a second built-up wiring in the pair of first built-up wirings.

[0033] The first common pad and the second common pad may be located on a diagonal line.

[0034] The first semiconductor light emitting device and the fourth semiconductor light emitting device may include GaAs-based semiconductor materials; each of the second semiconductor light emitting device, the third semiconductor light emitting device, the fifth semiconductor light emitting device and the sixth semiconductor light emitting device may include GaN-based semiconductor materials.

[0035] Each of the second, third, fifth, and sixth semiconductor light emitting devices may include a magnetic layer.

[0036] The common connection electrode may include a reflective layer.

[0037] The common connection electrode may have a third region; the first region may be located between the second region and the third region. In this case, the semiconductor light emitting device package may include: a pair of second assembly wirings located on the third region of the common connection electrode; and a third semiconductor light emitting device located on the pair of second assembly wirings.

[0038] At least one of the common connection electrode, the pair of first built-up wirings, and the pair of second built-up wirings may include a magnetic layer.

[0039] According to another aspect of the embodiment, a display device includes: a panel substrate including a plurality of pixels; a pair of first assembly wirings corresponding to each of the plurality of pixels; a partition wall including an assembly hole located on the pair of first assembly wirings; and a semiconductor light emitting device package located in the assembly hole. The semiconductor light emitting device package includes: a common connection electrode having a first region and a second region; a first semiconductor light emitting device located on the first region of the common connection electrode; a pair of second assembly wirings located on the second region of the common connection electrode; and a second semiconductor light emitting device and a third semiconductor light emitting device located on the pair of second assembly wirings.

[0040] Effects of the Invention

[0041] likeFigure 9a As shown, a semiconductor light emitting device package 350 including a plurality of semiconductor light emitting devices 421 to 426 capable of displaying images is assembled onto a display substrate 310 in a self-assembly manner, thereby preventing assembly defects caused by individually assembling a plurality of semiconductor light emitting devices and significantly improving assembly speed.

[0042] Furthermore, since the semiconductor light emitting device package 350 including the plurality of semiconductor light emitting devices 421 to 426 is assembled, process speed may be significantly improved compared to assembling the plurality of semiconductor light emitting devices individually.

[0043] On the other hand, when a plurality of semiconductor light emitting devices are assembled separately, color mixing occurs when the semiconductor light emitting devices are assembled into other assembly holes. However, as described in the embodiment, since the semiconductor light emitting device package 350 including the plurality of semiconductor light emitting devices 421, 422, 423 is assembled, color mixing can be prevented.

[0044] In the case of assembling a plurality of semiconductor light emitting devices separately, a plurality of assembly holes for assembling these semiconductor light emitting devices are located on the display substrate. In this case, a minimum spacing distance between the plurality of assembly holes is required, making it difficult to achieve high resolution. However, as described in the embodiment, a semiconductor light emitting device package 350 including a plurality of semiconductor light emitting devices 421 to 426 is manufactured using a semiconductor process, so that the spacing distance between the semiconductor light emitting devices 421 to 426 can be reduced. As described above, a display device ( Figure 7 and Figure 8 300), thus enabling ultra-high resolution.

[0045] On the other hand, a magnetic layer is included in each of the plurality of semiconductor light emitting devices 421 to 426 and / or a pair of assembly wirings in the semiconductor light emitting device package 350, so that during self-assembly, the semiconductor light emitting device package 350 is more easily moved due to the magnet, and thus the assembly speed can be increased by improving the mobility of the semiconductor light emitting device package 350. In addition, since the semiconductor light emitting device package 350 including the plurality of semiconductor light emitting devices 421 to 426 becomes larger, it is more affected by the dielectrophoretic force (DEP force) formed on the display substrate 310, so that the semiconductor light emitting device package 350 is assembled to the assembly hole 340H more quickly and stably, so that the assembly speed is increased and assembly failure can be prevented.

[0046] On the other hand, Fig.13As shown, the semiconductor light emitting device package 350 of the embodiment includes a plurality of semiconductor light emitting devices 421 to 426 to constitute two pixels PX1 and PX2, thereby being able to further improve the resolution.

[0047] In addition, if Fig.14 As shown, the semiconductor light emitting device package 350 of the embodiment includes a plurality of semiconductor light emitting devices 421 to 426 to constitute a pixel PX and a virtual pixel PX_D, so that even if the semiconductor light emitting devices 421 to 423 in the pixel PX fail, they can be replaced by the semiconductor light emitting devices 424 to 426 in the virtual pixel PX_D, thereby significantly improving the yield rate.

[0048] On the other hand, the common connection electrode 450 may include a reflective layer. Figures 10a to 10d As shown, the reflective layer of the common connection electrode 450 can reflect light traveling downward from the first semiconductor light emitting device 421 or the fourth semiconductor light emitting device 424 toward the upper side. The reflective layer of the common connection electrode 450 can reflect light traveling downward from each of the second semiconductor light emitting device 422 and the third semiconductor light emitting device 423 or the fifth semiconductor light emitting device 425 and the sixth semiconductor light emitting device 426 through the recess 430 between the pair of assembly wirings 441 and 442 toward the upper side. Therefore, by using the reflective layer of the common connection electrode 450, light efficiency or light output in the forward direction can be improved, thereby improving brightness.

[0049] The additional scope to which the embodiment can be applied can become more clear through the following detailed description. However, those skilled in the art can clearly understand the various changes and modifications within the thought and scope of the embodiment, so it should be understood that the detailed description and specific embodiments such as the preferred embodiment are only exemplary. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] Figure 1 A living room of a house in which a display device is installed according to the embodiment is shown.

[0051] Figure 2 This is a block diagram schematically showing a display device according to the embodiment.

[0052] Figure 3 It is shown Figure 2 A circuit diagram of an example of a pixel.

[0053] Figure 4 yes Figure 1 An enlarged view of the first panel area in the display device.

[0054] Figure 5 yes Figure 4 Magnified view of the A2 area.

[0055] Figure 6 It is a diagram showing an example of assembling a light-emitting device on a substrate by a self-assembly method according to an embodiment.

[0056] Figure 7 It is a diagram showing a display device according to an embodiment.

[0057] Figure 8 It is a cross-sectional view schematically showing a display device according to the embodiment.

[0058] Figure 9a is a top view showing the semiconductor light emitting device package of the first embodiment.

[0059] Figure 9b is a bottom view showing the semiconductor light emitting device package of the first embodiment.

[0060] Fig.10a is along Figure 9a FIG. 5 is a cross-sectional view taken along line D1 - D2 of the semiconductor light emitting device package according to the first embodiment.

[0061] Fig.10b is along Figure 9a FIG. 1 is a cross-sectional view taken along line E1 - E2 of the semiconductor light emitting device package according to the first embodiment.

[0062] Fig.10c is along Figure 9a FIG. 5 is a cross-sectional view taken along line F1 - F2 of the semiconductor light emitting device package according to the first embodiment.

[0063] Fig.10d is along Figure 9a FIG. 5 is a cross-sectional view taken along line G1 - G2 of the semiconductor light emitting device package according to the first embodiment.

[0064] Fig.11a is a cross-sectional view showing a second semiconductor light emitting device.

[0065] Fig.11b is a cross-sectional view showing a third semiconductor light emitting device.

[0066] Fig.12 A plurality of semiconductor light emitting device packages manufactured on a wafer are shown.

[0067] Fig.13 Two pixels constituted by the first to sixth semiconductor light emitting devices are shown.

[0068] Fig.14 One pixel constituted by the first to sixth semiconductor light emitting devices and one dummy pixel are shown.

[0069] Figure 15 to Figure 2 8 shows a manufacturing process of the semiconductor light emitting device package of the first embodiment.

[0070] Fig.29 FIG. 1 is a top view showing a plurality of semiconductor light emitting device packages of the second embodiment manufactured on a wafer.

[0071] The dimensions, shapes, values, etc. of the components shown in the drawings may be different from the actual ones. In addition, even if the same components are shown in different dimensions, shapes, quantities, etc. between the drawings, this is only an example on the drawings, and the same components may have the same dimensions, shapes, values, etc. between the drawings. DETAILED DESCRIPTION

[0072] Below, the embodiments disclosed in this specification will be described in detail with reference to the accompanying drawings. Regardless of the figure numbers, the same or similar constituent elements are given the same figure numbers and their descriptions are omitted. The suffixes "module" and "unit" of the constituent elements used in the following description are given or mixed for the sake of easy writing of the specification, and they themselves do not have meanings or functions that distinguish each other. In addition, the accompanying drawings are used to make the embodiments disclosed in this specification easy to understand, and the technical ideas disclosed in this specification are not limited by the accompanying drawings. In addition, when it is mentioned that an element such as a layer, a region or a substrate exists "on" another constituent element, it should be understood that it can exist directly on another element, or there can be other intermediate elements between them.

[0073] The display device described in this specification may include a TV, a sign, a mobile phone, a smartphone, a head-up display (HUD) for a vehicle, a backlight unit for a laptop computer, a display for VR or AR, etc. However, even in the form of a new product developed later, the configuration of the embodiments described in this specification may be applied to a device capable of displaying.

[0074] Hereinafter, a light emitting device according to an embodiment and a display device including the same will be described.

[0075] Figure 1 A living room of a house in which a display device is installed according to the embodiment is shown.

[0076] Reference Figure 1 The display device 100 of the embodiment can display the status of various electronic products such as a washing machine 101, a sweeping robot 102, and an air purifier 103, can communicate with each electronic product based on IOT, and can also control each electronic product based on user setting data.

[0077] The display device 100 of the embodiment may include a flexible display manufactured on a thin and soft substrate. The flexible display maintains the characteristics of an existing flat panel display and can be bent or rolled like paper.

[0078] In a flexible display, visual information can be realized by independently controlling the light emission of unit pixels configured in a matrix form. A unit pixel refers to the smallest unit for realizing a color. The unit pixel of a flexible display can be realized by a light-emitting device. In an embodiment, the light-emitting device can be a Micro-LED or a Nano-LED, but is not limited thereto.

[0079] Figure 2 is a block diagram schematically showing a display device of an embodiment, Figure 3 It is shown Figure 2 A circuit diagram of an example of a pixel.

[0080] Reference Figure 2 and Figure 3 The display device of the embodiment may include a display panel 10 , a driving circuit 20 , a scan driving unit 30 , and a power supply circuit 50 .

[0081] The display device 100 of the embodiment may drive the light emitting devices in an active matrix (AM) manner or a passive matrix (PM) manner.

[0082] The driving circuit 20 may include a data driving section 21 and a timing control section 22 .

[0083] The display panel 10 may be formed in a rectangular shape, but is not limited thereto. That is, the display panel 10 may be formed in a circular or oval shape. At least one side of the display panel 10 may be formed to be curved with a prescribed curvature.

[0084] The display panel 10 can be divided into a display area DA and a non-display area NDA arranged around the display area DA. The display area DA is an area for displaying an image by forming a plurality of pixels PX. The display panel 10 may include a plurality of data lines D1 to Dm (m is an integer greater than 2), a plurality of scan lines S1 to Sn (n is an integer greater than 2) intersecting the plurality of data lines D1 to Dm, a high potential voltage line VDDL supplying a high potential voltage, a low potential voltage line VSSL supplying a low potential voltage, and a plurality of pixels PX connected to the plurality of data lines D1 to Dm and the plurality of scan lines S1 to Sn.

[0085] Each of the plurality of pixels PX may include a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3. The first sub-pixel PX1 may emit a first color light of a first main wavelength, the second sub-pixel PX2 may emit a second color light of a second main wavelength, and the third sub-pixel PX3 may emit a third color light of a third main wavelength. The first color light may be red light, the second color light may be green light, and the third color light may be blue light, but are not limited thereto. In addition, Figure 2 exemplarily, each of the plurality of pixels PX includes three sub-pixels, but the present invention is not limited thereto. That is, each of the plurality of pixels PX may include more than four sub-pixels.

[0086] The first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 may be respectively connected to at least one of the plurality of data lines D1-Dm, at least one of the plurality of scan lines S1-Sn, and the high potential voltage line VDDL. Figure 3 As shown, the first subpixel PX1 may include a plurality of light emitting devices LD, a plurality of transistors for supplying current to the plurality of light emitting devices LD, and at least one capacitor Cst.

[0087] Although not shown, each of the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 may include only one light emitting device LD and at least one capacitor Cst.

[0088] Each of the plurality of light emitting devices LD may be a semiconductor light emitting diode including a first electrode, a plurality of conductive semiconductor layers and a second electrode. Here, the first electrode may be an anode electrode and the second electrode may be a cathode electrode, but is not limited thereto.

[0089] The light emitting device LD may be one of a horizontal type light emitting device, a flip-chip type light emitting device, and a vertical type light emitting device.

[0090] like Figure 3 As shown, the plurality of transistors may include: a driving transistor DT, supplying current to the plurality of light emitting devices LD; and a scanning transistor ST, supplying a data voltage to the gate electrode of the driving transistor DT. The driving transistor DT may include: a gate electrode connected to the source electrode of the scanning transistor ST; a source electrode connected to a high potential voltage line VDDL to which a high potential voltage is applied; and a drain electrode connected to the plurality of first electrodes of the plurality of light emitting devices LD. The scanning transistor ST may include a gate electrode connected to the scanning line Sk (k is an integer satisfying 1≤k≤n), a source electrode connected to the gate electrode of the driving transistor DT, and a drain electrode connected to the data line Dj (j is an integer satisfying 1≤j≤m).

[0091] The capacitor Cst is formed between the gate electrode and the source electrode of the driving transistor DT. The storage capacitor Cst charges a difference between the gate voltage and the source voltage of the driving transistor DT.

[0092] The driving transistor DT and the scanning transistor ST may be formed by thin film transistors. Figure 3 In the embodiment, the driving transistor DT and the scanning transistor ST are described with the case where the driving transistor DT and the scanning transistor ST are formed by P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor), but the present invention is not limited thereto. The driving transistor DT and the scanning transistor ST may also be formed by N-type MOSFET. In this case, the positions of the source electrode and the drain electrode of each of the driving transistor DT and the scanning transistor ST may be changed.

[0093] In addition, Figure 3 In the embodiment, each of the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 is illustrated as including a 2T1C (2Transistor-1capacitor: two transistors and one capacitor) having a driving transistor DT, a scanning transistor ST, and a capacitor Cst, but the present invention is not limited thereto. Each of the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 may include a plurality of scanning transistors ST and a plurality of capacitors Cst.

[0094] The second sub-pixel PX2 and the third sub-pixel PX3 may be represented by substantially the same circuit diagram as the first sub-pixel PX1 , and thus detailed description thereof will be omitted.

[0095] The driving circuit 20 outputs a plurality of signals and a plurality of voltages for driving the display panel 10. To this end, the driving circuit 20 may include a data driving part 21 and a timing control part 22.

[0096] The timing control unit 22 receives digital video data DATA and a plurality of timing signals from a host system. The plurality of timing signals may include a vertical sync signal, a horizontal sync signal, a data enable signal, and a dot clock. The host system may be an application processor of a smartphone or a tablet PC, a monitor, a system on a chip of a TV, etc.

[0097] The timing control unit 22 generates a plurality of control signals for controlling the operation time of the data driving unit 21 and the scan driving unit 30. The plurality of control signals may include a source control signal DCS for controlling the operation time of the data driving unit 21 and a scan control signal SCS for controlling the operation time of the scan driving unit 30.

[0098] The scan driving unit 30 receives a scan control signal SCS from the timing control unit 22. The scan driving unit 30 generates a plurality of scan signals according to the scan control signal SCS and supplies the scan signals to the plurality of scan lines S1 to Sn of the display panel 10. The scan driving unit 30 includes a plurality of transistors and may be formed in the non-display area NDA of the display panel 10. Alternatively, the scan driving unit 30 may be formed by an integrated circuit, in which case, it may be mounted on a gate flexible film attached to the other side of the display panel 10.

[0099] The data driving part 21 receives the digital video data DATA and the source control signal DCS from the timing control part 22. The data driving part 21 converts the digital video data DATA into analog data voltages according to the source control signal DCS and supplies the analog data voltages to the plurality of data lines D1Dm of the display panel 10.

[0100] The power supply circuit 50 can generate a plurality of voltages required for driving the display panel 10 from the main power applied from the system board and supply them to the display panel 10. For example, the power supply circuit 50 can generate a high potential voltage VDD and a low potential voltage VSS for driving a plurality of light emitting devices LD of the display panel 10 from the main power, and supply them to a high potential voltage line VDDL and a low potential voltage line VSSL of the display panel 10. In addition, the power supply circuit 50 can generate a driving voltage for driving the driving circuit 20 and the scanning driving part 30 from the main power, and supply them.

[0101] Figure 4 yes Figure 3 An enlarged view of the first panel area in the display device.

[0102] Reference Figure 4 The display device 100 of the embodiment can be manufactured by mechanically and electrically connecting a plurality of panel areas such as the first panel area A1 through tiling.

[0103] Alternatively, a single display panel may be formed by integrating a plurality of panel regions.

[0104] Figure 5 yes Figure 4 Magnified view of the A2 area.

[0105] Reference Figure 5The display device 100 of the embodiment may include a substrate 200, wiring harnesses 201 and 202, an insulating layer 206, and a plurality of semiconductor light emitting devices 150. More components may be included.

[0106] The assembly wiring may include a first assembly wiring 201 and a second assembly wiring 202 that are separated from each other. The first assembly wiring 201 and the second assembly wiring 202 may generate a dielectrophoretic force (DEP force) for assembling the semiconductor light emitting device 150. For example, the semiconductor light emitting device 150 may be one of a horizontal semiconductor light emitting device, a flip-chip semiconductor light emitting device, and a vertical semiconductor light emitting device.

[0107] In order to realize each unit pixel (sub-pixel), the semiconductor light emitting device 150 may include a red semiconductor light emitting device 150, a green semiconductor light emitting device 150G and a blue semiconductor light emitting device 150B0, but is not limited thereto and may also have a red phosphor and a green phosphor, etc., to realize red and green respectively.

[0108] The substrate 200 may be a supporting member that supports components disposed on the substrate 200 or a protecting member that protects the components.

[0109] The substrate 200 may be a rigid substrate or a flexible substrate. The substrate 200 may be formed of sapphire, glass, silicon or polyimide. In addition, the substrate 200 may include a flexible material such as PEN (Polyethylene Naphthalate) and PET (Polyethylene Terephthalate). In addition, the substrate 200 may be a transparent material, but is not limited thereto. The substrate 200 may function as a supporting substrate in a display panel, and may also function as an assembly substrate during self-assembly of a light-emitting device.

[0110] The substrate 200 may be Figure 2 and Figure 3 The sub-pixels PX1 , PX2 , and PX3 shown in the figure have a backplane of circuits such as transistors ST, DT, capacitor Cst, signal wiring, etc., but the present invention is not limited thereto.

[0111] The insulating layer 206 may include an organic material having insulation and flexibility such as polyimide, PAC, PEN, PET, polymer, or an inorganic material such as silicon oxide (SiO2) or silicon nitride series (SiNx), and may also be formed integrally with the substrate 200 to form a single substrate.

[0112] The insulating layer 206 may be a conductive adhesive layer having adhesiveness and conductivity, and the conductive adhesive layer is flexible, thereby realizing the flexible function of the display device. For example, the insulating layer 206 may be a conductive adhesive layer such as an anisotropic conductive film (ACF) or an anisotropic conductive medium, a solution containing conductive particles, etc. The conductive adhesive layer may be a layer having conductivity in a direction perpendicular to the thickness and electrical insulation in a direction horizontal to the thickness.

[0113] The insulating layer 206 may include an assembly hole 203 for inserting the semiconductor light emitting device 150. Therefore, during self-assembly, the semiconductor light emitting device 150 may be easily inserted into the assembly hole 203 of the insulating layer 206. The assembly hole 203 may be referred to as an insertion hole, a fixing hole, an alignment hole, etc. The assembly hole 203 may also be referred to as a hole.

[0114] The assembly hole 203 may be referred to as a hole, a slot, a groove, a recess, a pocket, or the like.

[0115] The assembly hole 203 may be different according to the shape of the semiconductor light emitting device 150. For example, the red semiconductor light emitting device, the green semiconductor light emitting device, and the blue semiconductor light emitting device may have different shapes, respectively, and may include an assembly hole 203 having a shape corresponding to the shape of each of these semiconductor light emitting devices. For example, the assembly hole 203 may include a first assembly hole for assembling a red semiconductor light emitting device, a second assembly hole for assembling a green semiconductor light emitting device, and a third assembly hole for assembling a blue semiconductor light emitting device. For example, the red semiconductor light emitting device may have a circular shape, the green semiconductor light emitting device may have a first elliptical shape including a first short axis and a second long axis, and the blue semiconductor light emitting device may have a second elliptical shape including a second short axis and a second long axis, but is not limited thereto. The second long axis of the ellipse of the blue semiconductor light emitting device may be greater than the second long axis of the ellipse of the green semiconductor light emitting device, and the second short axis of the ellipse of the blue semiconductor light emitting device may be smaller than the first short axis of the ellipse of the green semiconductor light emitting device.

[0116] On the other hand, the semiconductor light emitting device 150 can be mounted on the substrate 200 by, for example, a self-assembly method ( Figure 6 ) and transfer methods, etc.

[0117] Figure 6 It is a diagram showing an example of assembling a light-emitting device on a substrate by a self-assembly method according to an embodiment.

[0118] by Figure 6 Based on this, an example of assembling the semiconductor light emitting device of the embodiment to a display panel by a self-assembly method utilizing an electromagnetic field is described.

[0119] The assembly substrate 200 described later may also function as a display substrate 200 a in a display device after assembling the light emitting device, but the embodiment is not limited thereto.

[0120] Reference Figure 6 , the semiconductor light emitting device 150 can be put into the chamber 1300 filled with the fluid 1200, and the semiconductor light emitting device 150 can be moved to the assembly substrate 200 by using the magnetic field generated by the assembly device 1100. At this time, the light emitting device 150 adjacent to the assembly hole 207H of the assembly substrate 200 can be assembled to the assembly hole 207H by using the dielectrophoresis force (DEP force) generated by the electric field of the plurality of assembly wirings. The fluid 1200 can be water such as ultrapure water, but is not limited thereto. The chamber can be called a water tank, a trough, a container, etc.

[0121] After the semiconductor light emitting device 150 is introduced into the chamber 1300, the assembly substrate 200 may be disposed on the chamber 1300. According to an embodiment, the assembly substrate 200 may also be introduced into the chamber 1300.

[0122] The semiconductor light emitting device 150 may be a horizontal type semiconductor light emitting device, a vertical type semiconductor light emitting device, and a flip chip type semiconductor light emitting device.

[0123] The semiconductor light emitting device 150 may include a magnetic layer (not shown) having a magnetic body. The magnetic layer may include a magnetic metal such as nickel (Ni). The semiconductor light emitting device 150 put into the fluid includes a magnetic layer, and thus can be moved to the assembly substrate 200 by using the magnetic field generated by the assembly device 1100. The magnetic layer may be arranged on the upper side, the lower side, or both sides of the light emitting device.

[0124] The semiconductor light emitting device 150 may include a passivation layer 156 surrounding the top surface and the side surface. The passivation layer 156 may be formed of an inorganic insulator such as silicon dioxide or aluminum oxide by PECVD, LPCVD, or sputtering deposition. In addition, the passivation layer 156 may be formed by spin coating an organic material such as a photoresist or a polymer.

[0125] The semiconductor light emitting device 150 may include a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. The first conductive semiconductor layer may be an n-type semiconductor layer, and the second conductive semiconductor layer may be a p-type semiconductor layer, but is not limited thereto. The first conductive semiconductor layer, the second conductive semiconductor layer, and the active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer may constitute a light emitting portion. The light emitting portion may be referred to as a light emitting layer, a light emitting region, etc.

[0126] The first electrode (layer) may be disposed below the first conductive semiconductor layer, and the second electrode (layer) may be disposed on the second conductive semiconductor layer. For this purpose, a portion of the first conductive semiconductor layer or the second conductive semiconductor layer may be exposed to the outside. Thus, after the semiconductor light emitting device 150 is assembled to the assembly substrate 200, a portion of the passivation layer may be etched during the manufacturing process of the display device.

[0127] The first electrode may include at least one layer. For example, the first electrode may include an ohmic layer, a reflective layer, a magnetic layer, a conductive layer, an anti-oxidation layer, an adhesive layer, etc. The ohmic layer may include Au, AuBe, etc. The reflective layer may include Al, Ag, etc. The magnetic layer may include Ni, Co, etc. The conductive layer may include Cu, etc. The anti-oxidation layer may include Mo, etc. The adhesive layer may include Cr, Ti, etc.

[0128] The second electrode may include a transparent conductive layer. For example, the second electrode may include ITO, IZO, etc.

[0129] The assembly substrate 200 may include a first assembly wiring 201 and a second assembly wiring 202, respectively corresponding to the semiconductor light emitting device 150 to be assembled. Each of the first assembly wiring 201 and the second assembly wiring 202 may be formed by multi-layer stacking of a single metal or metal alloy, metal oxide, etc. For example, each of the first assembly wiring 201 and the second assembly wiring 202 may be formed by including at least one of Cu, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, but is not limited thereto.

[0130] The first assembly wiring 201 and the second assembly wiring 202 form an electric field as an AC voltage is applied, and the semiconductor light emitting device 150 inserted into the assembly hole 207H can be fixed due to the dielectrophoretic force generated by the electric field. The interval between the first assembly wiring 201 and the second assembly wiring 202 can be smaller than the width of the semiconductor light emitting device 150 and the width of the assembly hole 207H, and the assembly position of the semiconductor light emitting device 150 using the electric field can be fixed more accurately.

[0131] An insulating layer 215 is formed on the first assembled wiring 201 and the second assembled wiring 202, thereby protecting the first assembled wiring 201 and the second assembled wiring 202 from the influence of the fluid 1200 and preventing leakage of the current flowing in the first assembled wiring 201 and the second assembled wiring 202. For example, the insulating layer 215 can be formed of an inorganic insulator such as silicon dioxide, aluminum oxide, or an organic insulator in a single layer or multiple layers. The insulating layer 215 can have a minimum thickness for preventing the first assembled wiring 201 and the second assembled wiring 202 from being damaged when assembling the semiconductor light-emitting device 150, and can have a maximum thickness for stably assembling the semiconductor light-emitting device 150.

[0132] A partition wall 207 may be formed on the upper portion of the insulating layer 215 . A portion of the partition wall 207 may be located on the upper portion of the first and second assembly wirings 201 and 202 , and the remaining portion may be located on the upper portion of the assembly substrate 200 .

[0133] On the other hand, when manufacturing the assembly substrate 200 , a portion of the partition wall formed on the upper portion of the insulating layer 215 is removed, thereby forming assembly holes 207H in which the plurality of semiconductor light emitting devices 150 are respectively coupled and assembled to the assembly substrate 200 .

[0134] The assembly substrate 200 is provided with an assembly hole 207H for combining a plurality of semiconductor light emitting devices 150, and the surface where the assembly hole 207H is formed may contact the fluid 1200. The assembly hole 207H may guide the accurate assembly position of the semiconductor light emitting device 150.

[0135] On the other hand, the assembly hole 207H may have a shape and size corresponding to the shape of the semiconductor light emitting device 150 to be assembled at the corresponding position. Thus, it is possible to prevent other semiconductor light emitting devices or a plurality of semiconductor light emitting devices from being assembled in the assembly hole 207H.

[0136] Refer again Figure 6 After the assembly substrate 200 is disposed in the chamber, the assembly device 1100 applying a magnetic field may move along the assembly substrate 200. The assembly device 1100 may be a permanent magnet or an electromagnet.

[0137] In order to maximize the area affected by the magnetic field in the fluid 1200, the assembly device 1100 may move in contact with the assembly substrate 200. According to an embodiment, the assembly device 1100 may include a plurality of magnetic bodies, or may also include a magnetic body having a size corresponding to the assembly substrate 200. In this case, the moving distance of the assembly device 1100 may also be limited within a specified range.

[0138] The semiconductor light emitting device 150 within the chamber 1300 may move toward the assembling apparatus 1100 and the assembling substrate 200 by the magnetic field generated by the assembling apparatus 1100 .

[0139] The semiconductor light emitting device 150 may enter and be fixed to the assembly hole 207H by a dielectrophoretic force formed by an electric field between the assembly wirings 201 , 202 during the process of moving toward the assembly apparatus 1100 .

[0140] Specifically, the first assembly wiring 201 and the second assembly wiring 202 can form an electric field by an AC power supply, and due to the electric field, a dielectrophoretic force can be formed between the assembly wirings 201 and 202. Due to the dielectrophoretic force, the semiconductor light emitting device 150 can be fixed to the assembly hole 207H on the assembly substrate 200.

[0141] At this time, a predetermined solder layer (not shown) is formed between the light emitting device 150 mounted on the mounting hole 207H of the mounting substrate 200 and the mounting wirings 201 and 202 , thereby improving the bonding strength of the light emitting device 150 .

[0142] In addition, after assembly, a molding layer (not shown) may be formed in the assembly hole 207H of the assembly substrate 200. The molding layer may be a transparent resin or a resin containing a reflective material or a scattering material.

[0143] By utilizing the above-mentioned electromagnetic field self-assembly method, the time required to assemble a plurality of semiconductor light-emitting devices to a substrate can be greatly shortened, thereby realizing a large-area high-pixel display more quickly and economically.

[0144] Below, refer to Figures 7 to 29 , various embodiments for solving the above problems are described. The following omitted description can be seen by Figures 1 to 6 It can be easily understood by referring to the above description related to the accompanying drawings.

[0145] Figure 7 It is a diagram showing a display device according to an embodiment. Figure 8 It is a cross-sectional view schematically showing a display device according to the embodiment.

[0146] Reference Figure 7 and Figure 8 The display device 300 of the embodiment may include a display substrate 310 , a plurality of semiconductor light emitting device packages 350 , and a first signal line group 361 .

[0147] The display substrate 310 may function as a supporting member that supports various components of the display device 300 .

[0148] A plurality of assembly holes 340H may be provided on the display substrate 310. For example, a partition wall 340 may be disposed on the display substrate 310, and a plurality of assembly holes 340H may be formed on the partition wall 340.

[0149] A plurality of pixels PX may be defined on the display substrate 310. For example, at least one assembly hole 340H may be provided in one pixel PX. The semiconductor light emitting device package 350 may be disposed in the assembly hole 340H of the partition wall 340. Therefore, at least one semiconductor light emitting device package 350 may be provided in one pixel PX.

[0150] The semiconductor light emitting device package 350 of the first embodiment can be assembled to the assembly hole 340H by a self-assembly method. The self-assembly method has been described in detail above. Figure 6 Since it has been described in detail, the detailed description is omitted.

[0151] In the first embodiment, a plurality of semiconductor light emitting device packages 350 can be assembled to a plurality of assembly holes 340H by a self-assembly method. To this end, a first assembly wiring 321 and a second assembly wiring 322 are arranged in the assembly hole 340H of the display substrate 310. In order to insulate the first assembly wiring 321 and the second assembly wiring 322, an insulating layer 330 (hereinafter referred to as a first insulating layer) can be arranged on the first assembly wiring 321 and the second assembly wiring 322. In this case, the bottom of the assembly hole 340H can be a part of the top surface of the first insulating layer 330. That is, a part of the top surface of the first insulating layer 330 can be exposed through the assembly hole 340H.

[0152] For example, the shape of the assembly hole 340H may correspond to the shape of the semiconductor light emitting device package 350. In the first embodiment, the semiconductor light emitting device package 350 has a quadrilateral shape when viewed from above, and thus the assembly hole 340H may also have a quadrilateral shape. For example, the size of the assembly hole 340H may be larger than the size of the semiconductor light emitting device package 350. That is, when the semiconductor light emitting device package 350 is inserted into the assembly hole 340H, the outer side surface of the semiconductor light emitting device package 350 may be spaced apart from the inner side surface of the assembly hole 340H.

[0153] According to the first embodiment, the semiconductor light emitting device package 350 and the assembly hole 340H have a quadrilateral, so when the semiconductor light emitting device package 350 is assembled to the assembly hole 340H, due to the quadrilateral of the assembly hole 340H, the semiconductor light emitting device package 350 can maintain the current assembly state without rotating, thereby strengthening the fixing force of the semiconductor light emitting device package 350.

[0154] After the semiconductor light emitting device package 350 is assembled to the assembly hole 340H, an insulating layer 360 (hereinafter referred to as a second insulating layer) may be formed on the semiconductor light emitting device package 350 and the partition wall 340. Although not shown, a black matrix may be disposed between the pixels PX in order to distinguish between the pixels PX. The black matrix may be disposed on the partition wall 340 between the partition wall 340 and the second insulating layer 360 except for the assembly hole 340H, but is not limited thereto.

[0155] On the other hand, the semiconductor light emitting device package 350 can generate a plurality of different color lights. A color image can be displayed by the plurality of color lights. The plurality of semiconductor light emitting device packages 350 can be respectively arranged in a plurality of pixels PX.

[0156] like Figure 9a As shown in Figure 9b, the semiconductor light emitting device package 350 of the first embodiment may include a first semiconductor light emitting device 421, a second semiconductor light emitting device 422, and a third semiconductor light emitting device 423. The first semiconductor light emitting device 421, the second semiconductor light emitting device 422, and the third semiconductor light emitting device 423 may emit light of different colors from each other in order to display an image. For example, the first semiconductor light emitting device 421 may be a red semiconductor light emitting device, the second semiconductor light emitting device 422 may be a green semiconductor light emitting device, and the third semiconductor light emitting device 423 may be a blue semiconductor light emitting device, but this is not limited.

[0157] On the other hand, the first signal line group 361 is arranged on one side of each assembly hole in the plurality of assembly holes 340H, and may include a plurality of signal lines VDD_1, VDD_2, VDD_3, and VSS. Although not shown in the figure, a driving transistor ( Figure 3 DT).

[0158] The plurality of signal lines VDD_1, VDD_2, VDD_3, and VSS may be connected to each of the plurality of pixels PX. The plurality of pixels PX may each include at least one semiconductor light emitting device package 350. In this case, each of the plurality of signal lines VDD_1, VDD_2, VDD_3, and VSS may be connected to the plurality of semiconductor light emitting devices 421 to 423 of the semiconductor light emitting device package 350.

[0159] For example, the plurality of signal lines VDD_1 , VDD_2 , VDD_3 , VSS may include a first signal line VDD_1 , a second signal line VDD_2 , a third signal line VDD_3 , and a fourth signal line VSS.

[0160] For example, the first signal line VDD_1, the second signal line VDD_2, and the signal line VDD_3 may be arranged in parallel with each other along the second direction Y. For example, the fourth signal line VSS may intersect the first signal line VDD_1, the second signal line VDD_2, and the signal line VDD_3 and be arranged along the first direction X. In this case, the pixel PX may be defined by the intersection of the first signal line VDD_1, the second signal line VDD_2, the third signal line VDD_3, and the fourth signal line VSS. Therefore, the pixel PX may be defined at each intersection area of ​​the first signal line VDD_1, the second signal line VDD_2, the third signal line VDD_3, and the fourth signal line VSS.

[0161] The first signal line VDD_1 , the second signal line VDD_2 , the third signal line VDD_3 , and the fourth signal line VSS may be connected to the plurality of semiconductor light emitting devices 421 to 423 of the semiconductor light emitting device package 350 of each pixel PX through the plurality of connection lines 370 - 1 to 370 - 4 .

[0162] The plurality of connection lines 370 - 1 to 370 - 4 may be formed after the semiconductor light emitting device package 350 is assembled to the assembly hole 340H on the display substrate 310 .

[0163] For example, the first signal line VDD_1 can be connected to the first side of the first semiconductor light emitting device 421 through the first connection line 370-1, the second signal line VDD_2 can be connected to the first side of the second semiconductor light emitting device 422 through the second connection line 370-2, and the third signal line VDD_3 can be connected to the first side of the third semiconductor light emitting device 423 through the third connection line 370-3.

[0164] For example, the fourth signal line VSS may be connected to the second sides of the first, second and third semiconductor light emitting devices 421, 422 and 423 through the fourth connection line 370-4.

[0165] The fourth signal line VSS may be connected to the first common pad 443 , and the first common pad 443 may be commonly connected to the first semiconductor light emitting device 421 , the second semiconductor light emitting device 422 , and the third semiconductor light emitting device 423 .

[0166] For example, the first common pad 443 may extend horizontally from the second side of the first semiconductor light emitting device 421 onto the pair of assembly wirings 441, 442 and be connected to the pair of assembly wirings 441, 442. The pair of assembly wirings 441, 442 may be connected to the second semiconductor light emitting device 422 and the third semiconductor light emitting device 423 through the common connection electrode 450.

[0167] For example, the common connection electrode 450 may be connected to the lower side of each of the second semiconductor light emitting device 422 and the third semiconductor light emitting device 423. For example, the common connection electrode 450 may be connected to the bottom surface of each of the second semiconductor light emitting device 422 and the third semiconductor light emitting device 423. Specifically, the common connection electrode 450 may be connected to the bottom surface of each of the magnetic layers 422-1, 423-1 of the second semiconductor light emitting device 422 and the third semiconductor light emitting device 423.

[0168] On the other hand, the first common pad 443 and the connection lines 370-1 to 37-4 are arranged on the upper side of each of the plurality of semiconductor light emitting devices 421 to 423, and thus may hinder the travel of light of each of the plurality of semiconductor light emitting devices 421 to 423. Thus, the first common pad 443 and the connection lines 370-1 to 37-4 may be formed of a conductive material having excellent light transmittance. For example, the first common pad 443 and the connection lines 370-1 to 37-4 may include ITO or IZO, etc., but this is not limited.

[0169] According to the first embodiment, when the first common pad 443 and the connecting lines 370-1 to 37-4 are formed of a transparent conductive material, the travel of light emitted from each of the plurality of semiconductor light emitting devices 421 to 423 is not hindered, so the light is easily emitted, thereby preventing the light efficiency from being reduced.

[0170] On the other hand, the display device 300 of the embodiment may include a second signal line group 362 .

[0171] The second signal line group 362 is disposed on the other side of each of the plurality of assembly holes 340H, and may include a plurality of signal lines VDD_1', VDD_2', and VDD_3'. Although not shown, a driving transistor ( Figure 3 DT).

[0172] The plurality of signal lines VDD_1', VDD_2', and VDD_3' of the second signal line group 362 may also be connected to the pixel PX. Figure 9a and Figure 9b As shown, the semiconductor light emitting device package 350 may include a fourth semiconductor light emitting device 424 , a fifth semiconductor light emitting device 425 , and a sixth semiconductor light emitting device 426 .

[0173] The fourth semiconductor light emitting device 424, the fifth semiconductor light emitting device 425, and the sixth semiconductor light emitting device 426 may emit light of different colors to display an image. For example, the fourth semiconductor light emitting device 424 may be a red semiconductor light emitting device, the fifth semiconductor light emitting device 425 may be a green semiconductor light emitting device, and the sixth semiconductor light emitting device 426 may be a blue semiconductor light emitting device, but this is not limited.

[0174] For example, each of the first semiconductor light emitting device 421 and the fourth semiconductor light emitting device 424 may include a semiconductor material based on GaAs (gallium arsenide), and each of the second semiconductor light emitting device 422, the third semiconductor light emitting device 423, the fifth semiconductor light emitting device 425 and the sixth semiconductor light emitting device 426 may include a semiconductor material based on GaN (gallium nitride), but this is not limited to this.

[0175] For example, the fifth signal line VDD_1' can be connected to the first side of the fourth semiconductor light emitting device 424 through the fifth connection line 371-1, the sixth signal line VDD_2' can be connected to the first side of the fifth semiconductor light emitting device 425 through the sixth connection line 371-2, and the seventh signal line VDD_3' can be connected to the first side of the sixth semiconductor light emitting device 426 through the seventh connection line 371-3.

[0176] For example, the fourth signal line VSS may be connected to the second sides of the fourth, fifth and sixth semiconductor light emitting devices 424, 425 and 426 through the fourth connection line 370-4.

[0177] Specifically, if Figure 7 , Figure 9a and Figure 9b As shown, the fourth signal line VSS may be connected to the second common pad 444 , and the second common pad 444 may be commonly connected to the fourth semiconductor light emitting device 424 , the fifth semiconductor light emitting device 425 , and the sixth semiconductor light emitting device 426 .

[0178] For example, the second common pad 444 may extend horizontally from the second side of the fourth semiconductor light emitting device 424 to the pair of assembly wirings 441, 442 and be connected to the pair of assembly wirings 441, 442. The pair of assembly wirings 441, 442 may be connected to the fifth semiconductor light emitting device 425 and the sixth semiconductor light emitting device 426 through the common connection electrode 450.

[0179] For example, the common connection electrode 450 may be connected to the lower side of each of the fifth semiconductor light emitting device 425 and the sixth semiconductor light emitting device 426. For example, the common connection electrode 450 may be in contact with the bottom surface of each of the fifth semiconductor light emitting device 425 and the sixth semiconductor light emitting device 426. Specifically, the common connection electrode 450 may be in contact with the bottom surface of the magnetic layer 425-1, 426-1 of each of the fifth semiconductor light emitting device 425 and the sixth semiconductor light emitting device 426.

[0180] The first common pad 443 and the second common pad 444 may be provided or only one of them may be provided. In addition, three or more common pads may be provided.

[0181] It will be explained later that after the second semiconductor light emitting device 422, the third semiconductor light emitting device 423, the fifth semiconductor light emitting device 425 and the sixth semiconductor light emitting device 426 are assembled onto a pair of assembly wirings 441 and 442, the first common pad 443 and the second common pad 444 can be electrically connected to a portion of the upper side of a pair of assembly wirings 441 and 442, and the common connection electrode 450 can be electrically connected to the lower side of a pair of assembly wirings 441 and 442.

[0182] On the other hand, the second semiconductor light emitting device 422 , the third semiconductor light emitting device 423 , the fifth semiconductor light emitting device 425 , and the sixth semiconductor light emitting device 426 disposed on the pair of assembly wirings 441 , 442 may be electrically connected to the pair of assembly wirings 441 , 442 .

[0183] For example, the second semiconductor light emitting device 422 may be electrically connected to the common connection electrode 450 through the recess 430 between the pair of assembly wirings 441 and 442. For example, the third semiconductor light emitting device 423 may be electrically connected to the common connection electrode 450 through the recess 430 between the pair of assembly wirings 441 and 442. For example, the fifth semiconductor light emitting device 425 may be electrically connected to the common connection electrode 450 through the recess 430 between the pair of assembly wirings 441 and 442. For example, the sixth semiconductor light emitting device 426 may be electrically connected to the common connection electrode 450 through the recess 430 between the pair of assembly wirings 441 and 442.

[0184] In addition, the first semiconductor light emitting device 421 and the sixth semiconductor light emitting device 426 may be electrically connected to the common connection electrode 450. For example, the bottom surfaces of the first semiconductor light emitting device 421 and the sixth semiconductor light emitting device 426 may be in contact with the common connection electrode 450.

[0185] For example, the common connection electrode 450 can be connected to the bottom surface of the first semiconductor light-emitting device 421, and then connected to the bottom surfaces of the second semiconductor light-emitting device 422, the third semiconductor light-emitting device 423, the fifth semiconductor light-emitting device 425 and the sixth semiconductor light-emitting device 426 arranged on the pair of assembly wirings 441 and 442 through the recess 430 between the pair of assembly wirings 441 and 442.

[0186] For example, the common connection electrode 450 can be connected to the bottom surface of the fourth semiconductor light-emitting device 424, and then connected to the bottom surfaces of the second semiconductor light-emitting device 422, the third semiconductor light-emitting device 423, the fifth semiconductor light-emitting device 425 and the sixth semiconductor light-emitting device 426 arranged on the pair of assembly wirings 441 and 442 through the recess 430 between the pair of assembly wirings 441 and 442.

[0187] The bottom surfaces of the second semiconductor light emitting device 422 , the third semiconductor light emitting device 423 , the fifth semiconductor light emitting device 425 , and the sixth semiconductor light emitting device 426 , which expose the space between the pair of assembly wirings 441 and 442 , may be in contact with the common connection electrode 450 .

[0188] For example, the size of the common connection electrode 450 may be the same as that of the semiconductor light emitting device package 350 , but is not limited thereto.

[0189] In an embodiment, each of the second, third, fifth, and sixth semiconductor light emitting devices 422, 423, 425, and 426 may be a vertical type semiconductor light emitting device capable of being electrically connected at upper and lower sides.

[0190] On the other hand, the second common pad 444 and the connection lines 371-1 to 371-3 are arranged on the upper side of each of the plurality of semiconductor light emitting devices 424 to 426, and thus may hinder the travel of light of each of the plurality of semiconductor light emitting devices 424 to 426. Therefore, the second common pad 444 and the connection lines 371-1 to 371-3 may be formed of a conductive material having excellent light transmittance. For example, the second common pad 444 and the connection lines 371-1 to 371-3 may include ITO or IZO, etc., but this is not limited.

[0191] According to the first embodiment, when the second common pad 444 and the connecting lines 371-1 to 371-3 are formed of a transparent conductive substance, the travel of light emitted from each of the plurality of semiconductor light emitting devices 424 to 426 is not hindered, so the light is easily emitted, thereby preventing the light efficiency from being reduced.

[0192] On the other hand, the plurality of semiconductor light emitting devices 421 to 426 included in the semiconductor light emitting device package 350 of the first embodiment may be composed of two pixels or composed of one pixel and one dummy pixel.

[0193] like Fig.13 As shown, in the semiconductor light emitting device package 350 of the first embodiment, the first to third semiconductor light emitting devices 421 to 423 may constitute a first pixel PX1, and the fourth to sixth semiconductor light emitting devices 424 to 426 may constitute a second pixel PX2. Fig.13 The semiconductor light emitting device package 350 is configured in Figure 7 In the case of the assembly hole 340H, each pixel PX includes two pixels PX1 and PX2, and the number of pixels is doubled, so an ultra-high resolution display can be achieved.

[0194] That is, by applying the red data signal, green data signal, and blue data signal to the first signal line VDD_1 to the third signal line VDD_3 included in the first signal line group 361, red light, green light, and blue light may be emitted from the first semiconductor light emitting device 421 to the third semiconductor light emitting device 423 constituting the first pixel PX1, respectively, so that an image for the first pixel PX1 may be displayed. Due to the red data signal, green data signal, and blue data signal applied to the first signal line VDD_1' to the third signal line VDD_3' included in the second signal line group 362, red light, green light, and blue light may be emitted from the fourth semiconductor light emitting device 424 to the sixth semiconductor light emitting device 426 constituting the second pixel PX2, respectively, so that an image for the second pixel PX2 may be displayed.

[0195] like Fig.14 As shown, in the semiconductor light emitting device package 350 of the first embodiment, the first to third semiconductor light emitting devices 421 to 423 may constitute one pixel PX, and the fourth to sixth semiconductor light emitting devices 424 to 426 may constitute a virtual pixel PX_D. Fig.14 The semiconductor light emitting device package 350 is configured in Figure 7 In the case of the assembly hole 340H shown, the pixel PX displays an image, while the dummy pixel PX_D does not display an image.

[0196] By applying the red data signal, green data signal, and blue data signal to the first signal line VDD_1 to the third signal line VDD_3 included in the first signal line group 361, red light, green light, and blue light may be emitted from the first semiconductor light emitting device 421 to the third semiconductor light emitting device 423 constituting the pixel PX1, respectively, so that an image for the pixel PX1 may be displayed. The fourth semiconductor light emitting device 424 to the sixth semiconductor light emitting device 426 included in the dummy pixel PX_D may not emit light. That is, the red data signal, the green data signal, and the blue data signal are not supplied to the fourth semiconductor light emitting device 424 to the sixth semiconductor light emitting device 426 included in the dummy pixel PX_D, respectively.

[0197] In the event that at least one of the first to third semiconductor light emitting devices 421 to 423 constituting the pixel PX1 fails and does not emit light, at least one of the fourth to sixth semiconductor light emitting devices 424 to 426 constituting the virtual pixel PX_D may be used to replace the failed semiconductor light emitting device.

[0198] For example, in the case where the second semiconductor light emitting device 422 constituting the pixel PX1 fails, the fifth semiconductor light emitting device 425 emitting the same color light as the second semiconductor light emitting device 422, i.e., green light, can be used instead of the second semiconductor light emitting device 422. To this end, a green data signal is supplied to the fifth signal line VDD_2' instead of the second signal line VDD_2, so that the green data signal is not supplied to the second semiconductor light emitting device 422, but is supplied to the fifth semiconductor light emitting device 425 instead, so that green light can be emitted from the fifth semiconductor light emitting device 425.

[0199] Below, refer to Figure 9a , Figure 9b and Figures 10a to 10d , illustrating the semiconductor light emitting device package 350 of the first embodiment.

[0200] [First embodiment]

[0201] Figure 9a is a top view showing the semiconductor light emitting device package of the first embodiment. Figure 9b is a bottom view showing the semiconductor light emitting device package of the first embodiment. Fig.10a is along Figure 9a FIG. 5 is a cross-sectional view taken along line D1 - D2 of the semiconductor light emitting device package according to the first embodiment. Fig.10b is along Figure 9a FIG. 1 is a cross-sectional view taken along line E1 - E2 of the semiconductor light emitting device package according to the first embodiment. Fig.10c is along Figure 9aFIG. 5 is a cross-sectional view taken along line F1 - F2 of the semiconductor light emitting device package according to the first embodiment. Fig.10d is along Figure 9a FIG. 5 is a cross-sectional view taken along line G1 - G2 of the semiconductor light emitting device package according to the first embodiment.

[0202] Reference Figures 9a to 10d The semiconductor light emitting device package 350 of the first embodiment may include a common connection electrode 450 , a first semiconductor light emitting device 421 , a pair of assembly wirings 441 , 442 , a second semiconductor light emitting device 422 , and a third semiconductor light emitting device 423 .

[0203] The common connection electrode 450 may play a role in supporting the first semiconductor light emitting device 421 , the pair of assembly wirings 441 , 442 , the second semiconductor light emitting device 422 , and the third semiconductor light emitting device 423 .

[0204] The common connection electrode 450 may have a first region 411 and a second region 412. For example, the first region 411 and the second region 412 may meet each other in a horizontal direction.

[0205] The first semiconductor light emitting device 421 may be arranged on the first region 411 of the common connection electrode 450, and the pair of assembly wirings 441 and 442 may be arranged on the second region 412 of the common connection electrode 450. Therefore, the pair of assembly wirings 441 and 442 and the first semiconductor light emitting device 421 may be arranged horizontally to each other. That is, the pair of assembly wirings 441 and 442 and the first semiconductor light emitting device 421 may not overlap in the vertical direction.

[0206] On the other hand, the common connection electrode 450 can function as a supporting substrate or a supporting structure. That is, the common connection electrode 450 can support various components arranged thereon, namely, a pair of assembly wirings 441, 442, a plurality of semiconductor light emitting devices 421 to 426, and a plurality of common pads 443, 444.

[0207] On the other hand, the common connection electrode 450 may include a reflective layer. The reflective layer may reflect light traveling from the first semiconductor light emitting device 421 or the fourth semiconductor light emitting device 424 to the lower side toward the upper side. The reflective layer may reflect light traveling from each of the second semiconductor light emitting device 422 and the third semiconductor light emitting device 423 or the fifth semiconductor light emitting device 425 and the sixth semiconductor light emitting device 426 to the lower side through the recess 430 between the pair of assembly wirings 441 and 442 toward the upper side. Therefore, the light efficiency or light output in the forward direction can be improved by using the reflective layer, so that the brightness can be improved.

[0208] The first semiconductor light emitting device 421 may include a first conductive semiconductor layer 421a, an active layer 421b, and a second conductive semiconductor layer 421c. For example, the first conductive semiconductor layer 421a may be an n-type semiconductor layer, and the second conductive semiconductor layer 421c may be a p-type semiconductor layer, but this is not limited. When a voltage is applied to the first semiconductor light emitting device 421, a plurality of electrons may be generated in the first conductive semiconductor layer 421a and supplied to the active layer 421b, and holes may be generated in the second conductive semiconductor layer 421c and supplied to the active layer 421b. The electrons and holes are recombined in the active layer 421b, thereby generating color light of a wavelength corresponding to the energy band gap of the semiconductor material of the active layer 421b. For example, the active layer 421b of the first semiconductor light emitting device 421 may be composed of a semiconductor material that emits blue light.

[0209] On the other hand, the common connection electrode 450 may share the first conductive type semiconductor layer 421a of the first semiconductor light emitting device 421. That is, the first conductive type semiconductor layer 421a of the first semiconductor light emitting device 421 may be used as the common connection electrode 450. Therefore, both the first region 411 and the second region 412 of the common connection electrode 450 may be the first conductive type semiconductor layer 421a of the first semiconductor light emitting device 421.

[0210] In this case, an active layer 421b and a second conductive semiconductor layer 421c are formed on one side region of the first conductive semiconductor layer 421a, i.e., the first region 411 of the common connection electrode 450, so that the first semiconductor light emitting device 421 including the first conductive semiconductor layer 421a, the active layer 421b and the second conductive semiconductor layer 421c can be arranged on the first region 411 of the common connection electrode 450. In addition, a pair of assembly wirings 441 and 442 can be arranged on the other region of the first conductive semiconductor layer 421a, i.e., the second region 412 of the common connection electrode 450.

[0211] The pair of assembly wirings 441 and 442 can assemble the second semiconductor light emitting device 422 and the third semiconductor light emitting device 423 onto the second region 412 of the common connection electrode 450 by a self-assembly method.

[0212] For example, the dielectrophoretic force is generated by the AC voltage applied to the pair of assembly wirings 441 and 442, and the second semiconductor light emitting device 422 and the third semiconductor light emitting device 423 can be assembled to the pair of assembly wirings 441 and 442 due to the dielectrophoretic force. Although not shown in the figure, a plurality of assembly holes ( Fig.15 1021 to 1024) of the partition wall ( Fig.16e The partition wall 1030 is formed to easily assemble the second semiconductor light emitting device 422 and the third semiconductor light emitting device 423. The partition wall 1030 may be removed after the second semiconductor light emitting device 422 and the third semiconductor light emitting device 423 are assembled, but this is not limited.

[0213] On the other hand, the semiconductor light emitting device package 350 of the first embodiment may include a fourth semiconductor light emitting device 424 , a fifth semiconductor light emitting device 425 , and a sixth semiconductor light emitting device 426 .

[0214] The common connection electrode 450 may have a third region 413. At this time, the second region 412 may be disposed between the first region 411 and the third region 413. Therefore, the first region 411, the second region 412, and the third region 413 may be positioned sequentially along the horizontal direction.

[0215] The fourth semiconductor light emitting device 424 may be disposed on the third region 413 of the common connection electrode 450. The fifth semiconductor light emitting device 425 and the sixth semiconductor light emitting device 426 may be disposed on a pair of assembly wirings 441,442.

[0216] During the self-assembly process, due to the dielectric electrophoretic force formed on a pair of assembly wirings 441 and 442, not only the second semiconductor light emitting device 422 and the third semiconductor light emitting device 423 can be assembled onto the pair of assembly wirings 441 and 442, but also the fifth semiconductor light emitting device 425 and the sixth semiconductor light emitting device 426 can be assembled onto the pair of assembly wirings 441 and 442.

[0217] During the self-assembly process, the second semiconductor light emitting device 422, the third semiconductor light emitting device 423, the fifth semiconductor light emitting device 425, and the sixth semiconductor light emitting device 426 may move with the magnet. In this case, in order to enhance the mobility of each of the second semiconductor light emitting device 422, the third semiconductor light emitting device 423, the fifth semiconductor light emitting device 425, and the sixth semiconductor light emitting device 426, the second semiconductor light emitting device 422, the third semiconductor light emitting device 423, the fifth semiconductor light emitting device 425, and the sixth semiconductor light emitting device 426 may include magnetic layers 422-1, 423-1, 425-1, and 426-1, respectively. The magnetic layers 422-1, 423-1, 425-1, and 426-1 may include nickel, cobalt, etc., but are not limited thereto. For example, the magnetic layers 422 - 1 , 423 - 1 , 425 - 1 , and 426 - 1 may be disposed under the second, third, fifth, and sixth semiconductor light emitting devices 422 , 423 , 425 , and 426 , respectively, but this is not limited thereto.

[0218] Although not shown, a plurality of assembly holes ( 424 ) corresponding to each of the fifth semiconductor light emitting device 425 and the sixth semiconductor light emitting device 426 may be formed. Fig.15 The partition wall 1030 of the semiconductor light emitting device 1021 to 1024 is formed to easily assemble the fifth semiconductor light emitting device 425 and the sixth semiconductor light emitting device 426. The partition wall 1030 may be removed after the fifth semiconductor light emitting device 425 and the sixth semiconductor light emitting device 426 are assembled, but this is not limited.

[0219] On the other hand, the fourth semiconductor light emitting device 424 may include a first conductive semiconductor layer 424a, an active layer 424b and a second conductive semiconductor layer 424c. The first conductive semiconductor layer 424a may be an n-type semiconductor layer, and the second conductive semiconductor layer 424c may be a p-type semiconductor layer, but this is not limited.

[0220] The first conductive type semiconductor layer 424a of the fourth semiconductor light emitting device 424 may be connected to the first conductive type semiconductor layer 421a of the first semiconductor light emitting device 421. That is, the first conductive type semiconductor layer 424a of the fourth semiconductor light emitting device 424 and the first conductive type semiconductor layer 421a of the first semiconductor light emitting device 421 may be integrally formed. Therefore, the first conductive type semiconductor layer 421a of the first semiconductor light emitting device 421 or the first conductive type semiconductor layer 424a of the fourth semiconductor light emitting device 424 may be used as the first region 411, the second region 412, and the third region 413 of the common connection electrode 450.

[0221] For example, the active layer 421b and the second conductive type semiconductor layer 421c of the first semiconductor light emitting device 421 or the active layer 424b and the second conductive type semiconductor layer 424c of the fourth semiconductor light emitting device 424 are not disposed on the second region 412 of the common connection electrode 450. Therefore, a concave portion ( Fig.16c or Fig.16d of 1010).

[0222] For example, the second semiconductor light emitting device 422, the third semiconductor light emitting device 423, the fifth semiconductor light emitting device 425, and the sixth semiconductor light emitting device 426 may be disposed between the first semiconductor light emitting device 421 and the fourth semiconductor light emitting device 424. For example, the third semiconductor light emitting device 423 and the sixth semiconductor light emitting device 426 may be disposed between the second semiconductor light emitting device 422 and the fifth semiconductor light emitting device 425.

[0223] The first semiconductor light emitting device 421 and the fourth semiconductor light emitting device 424 may be symmetrical to each other with respect to the center of the semiconductor light emitting device package 350. The second semiconductor light emitting device 422 and the fifth semiconductor light emitting device 425 may be symmetrical to each other with respect to the center of the semiconductor light emitting device package 350. The third semiconductor light emitting device 423 and the sixth semiconductor light emitting device 426 may be symmetrical to each other with respect to the center of the semiconductor light emitting device package 350.

[0224] The second semiconductor light emitting device 422, the third semiconductor light emitting device 423, the fifth semiconductor light emitting device 425, and the sixth semiconductor light emitting device 426 may be arranged on the pair of assembly wirings 441, 442. For example, due to the dielectrophoretic force formed on the pair of assembly wirings 441, 442, the second semiconductor light emitting device 422, the third semiconductor light emitting device 423, the fifth semiconductor light emitting device 425, and the sixth semiconductor light emitting device 426 may be self-assembled on the pair of assembly wirings 441, 442 at the same time.

[0225] For example, the third semiconductor light emitting device 423 and the sixth semiconductor light emitting device 426 may be disposed between the second semiconductor light emitting device 422 and the fifth semiconductor light emitting device 425. Thus, the second semiconductor light emitting device 422, the third semiconductor light emitting device 423, the sixth semiconductor light emitting device 426 and the fifth semiconductor light emitting device 425 may be sequentially disposed along the length direction of the pair of assembly wirings 441 and 442, i.e., the Y direction.

[0226] On the other hand, the unexplained reference numerals 461 to 468 may be contact holes, and the plurality of connection wires 370 - 1 to 370 - 4 , 371 - 1 to 371 - 3 may be connected to the plurality of semiconductor light emitting devices 421 to 426 of the semiconductor light emitting device package 350 through these contact holes 461 to 468 .

[0227] On the other hand, Fig.11a and Fig.11b As shown, the second semiconductor light emitting device 422 and the third semiconductor light emitting device 423 may be prefabricated semiconductor light emitting devices, i.e., chips. Although not shown, the fifth semiconductor light emitting device 425 and the sixth semiconductor light emitting device 426 may also be prefabricated chips. The second semiconductor light emitting device 422, the third semiconductor light emitting device 423, the fifth semiconductor light emitting device 425, and the sixth semiconductor light emitting device 426 may be self-assembled onto the pair of assembly wirings 441, 442 by the dielectrophoretic force formed by the pair of assembly wirings 441, 442.

[0228] The second semiconductor light emitting device 422 may include a first conductive semiconductor layer 422a, an active layer 422b, and a second conductive semiconductor layer 422c. The third semiconductor light emitting device 423 may include a first conductive semiconductor layer 423a, an active layer 423b, and a second conductive semiconductor layer 423c. The second semiconductor light emitting device 422 may include a magnetic layer 422-1 below the first conductive semiconductor layer 422a and a passivation layer 422-2 surrounding the first conductive semiconductor layer 422a, the active layer 422b, and the second conductive semiconductor layer 422c. Similarly, the second semiconductor light emitting device 423 may include a magnetic layer 423-1 below the first conductive semiconductor layer 423a and a passivation layer 423-2 surrounding the first conductive semiconductor layer 423a, the active layer 423b, and the second conductive semiconductor layer 423c.

[0229] In addition, the second semiconductor light emitting device 422 and the third semiconductor light emitting device 423 may include magnetic layers 422-1 and 423-1, respectively. The magnetic layer 422-1 may be disposed below the first conductive type semiconductor layer 422a of the second semiconductor light emitting device 422, and the magnetic layer 423-1 may be disposed below the first conductive type semiconductor layer 423a of the third semiconductor light emitting device 423. During self-assembly, the magnetic layers 422-1 and 423-1 of the second semiconductor light emitting device 422 and the third semiconductor light emitting device 423 are magnetized by the magnet, so that the second semiconductor light emitting device 422 and the third semiconductor light emitting device 423 can be easily moved as the magnet moves, thereby being able to increase the assembly speed of the second semiconductor light emitting device 422 and the third semiconductor light emitting device 423.

[0230] Likewise, each of the fifth and sixth semiconductor light emitting devices 425 and 426 may include a magnetic layer (not shown).

[0231] On the other hand, the semiconductor light emitting device package 350 of the first embodiment may include a first common pad 443 and a second common pad 444. The first common pad 443 and the second common pad 444 are disposed on the first semiconductor light emitting device 421 to the sixth semiconductor light emitting device 426, and thus may be formed of a transparent conductive material so as not to hinder the forward travel of the corresponding light.

[0232] For example, the first common pad 443 can be commonly connected to the first sides of the first semiconductor light emitting device 421, the second semiconductor light emitting device 422 and the third semiconductor light emitting device 423, and the second common pad 444 can be commonly connected to the first sides of the fourth semiconductor light emitting device 424, the fifth semiconductor light emitting device 425 and the sixth semiconductor light emitting device 426.

[0233] The current of each of the first semiconductor light emitting device 421, the second semiconductor light emitting device 422, and the third semiconductor light emitting device 423 may flow to the fourth signal line VSS through the first common pad 443. The current of each of the fourth semiconductor light emitting device 424, the fifth semiconductor light emitting device 425, and the sixth semiconductor light emitting device 426 may flow to the fourth signal line VSS through the second common pad 444.

[0234] The first common pad 443 may extend from the third semiconductor light emitting device 423 to the first semiconductor light emitting device 421 via the second semiconductor light emitting device 422. The second common pad 444 may extend from the sixth semiconductor light emitting device 426 to the fourth semiconductor light emitting device 424 via the fifth semiconductor light emitting device 425.

[0235] The first common pad 443 and the second common pad 444 may be located on a diagonal line with the center of the semiconductor light emitting device package 350 as a reference.

[0236] On the other hand, the semiconductor light emitting device package 350 of the first embodiment may include an insulating layer 431 .

[0237] The insulating layer 431 can insulate various components disposed on the common connection electrode 450. The insulating layer 431 can be composed of a plurality of layers, but this is not limited. The plurality of layers can be formed of the same insulating material, but this is not limited.

[0238] The insulating layer 431 may be formed at the periphery of each of the second semiconductor light emitting device 422, the third semiconductor light emitting device 423, the fifth semiconductor light emitting device 425, and the sixth semiconductor light emitting device 426. The insulating layer 431 may firmly fix each of the second semiconductor light emitting device 422, the third semiconductor light emitting device 423, the fifth semiconductor light emitting device 425, and the sixth semiconductor light emitting device 426 to the common connection electrode 450.

[0239] The insulating layer 431 may be formed on the first to sixth semiconductor light emitting devices 421 to 426. The insulating layer 431 may protect the first to sixth semiconductor light emitting devices 421 to 426 from external impact or electrical short circuit caused by external foreign matter.

[0240] On the other hand, in the semiconductor light emitting device package 350 of the first embodiment, the plurality of semiconductor light emitting devices 422, 423, 425, 426 can be assembled into Figure 7 and Figure 8 Assembly hole 340H is shown.

[0241] The semiconductor light emitting device package 350 of the first embodiment has a plurality of semiconductor light emitting devices 421 to 426 , and thus the semiconductor light emitting device package 350 may not be easily moved by the magnet during a self-assembly process.

[0242] Therefore, in order to enhance the mobility of the semiconductor light emitting device package 350, the pair of assembly wirings 441, 442 and / or the common connection electrode 450 of the semiconductor light emitting device package 350 may include at least two or more metal layers including a magnetic layer. The magnetization characteristics may increase as the area of ​​the magnetic layer becomes larger. To this end, the overall width W1 of the pair of assembly wirings 441, 442 may be greater than the width W2 of the first semiconductor light emitting device 421 or the fourth semiconductor light emitting device 424. In addition, the size of the common connection electrode 450 may be the same as that of the semiconductor light emitting device package 350 of the first embodiment.

[0243] On the other hand, the semiconductor light emitting device package 350 of the first embodiment may be Fig.12 The wafer 1000 is shown as being fabricated.

[0244] That is, an epitaxial layer ( Figures 16a to 16e 1005), the upper side of the epitaxial layer 1005 can be etched to form a recess 1010. A pair of assembly wirings 441 and 442 can be formed in the recess 1010, and the second semiconductor light emitting device 422, the third semiconductor light emitting device 423, the fifth semiconductor light emitting device 425, and the sixth semiconductor light emitting device 426 can be assembled by using a self-assembly process. Then, through a series of post-processes, the first semiconductor light emitting device 421 and the fourth semiconductor light emitting device 424 formed on the epitaxial layer 1005 can be manufactured, and the second semiconductor light emitting device 422, the third semiconductor light emitting device 423, the fifth semiconductor light emitting device 425, and the sixth semiconductor light emitting device 426 can be formed on the recess 1010. Then, a plurality of packaging regions corresponding to each of the plurality of semiconductor light emitting device packages 350 can be separated, and the plurality of packaging regions can be separated from the wafer 1000 by a separation process, and then a common connection electrode is formed on the back surface of each of the plurality of packaging regions, thereby manufacturing a plurality of semiconductor light emitting device packages 350.

[0245] [Manufacturing process of semiconductor light emitting device package]

[0246] Figure 15 to Figure 2 8 shows a manufacturing process of the semiconductor light emitting device package of the first embodiment.

[0247] Reference Fig.15First, a plurality of holes 1021 to 1024 may be formed along a second direction Y on the wafer 1000 .

[0248] Specifically, if Fig.16a As shown, an epitaxial layer 1005 may be formed on a wafer 1000. The epitaxial layer 1005 may include a plurality of semiconductor layers 1005a, 1005b, and 1005c. The plurality of semiconductor layers may include a first semiconductor layer 1005a, a second semiconductor layer 1005b, and a third semiconductor layer 1005c. Each of the first semiconductor layer 1005a, the second semiconductor layer 1005b, and the third semiconductor layer 1005c may include a plurality of layers.

[0249] For example, the wafer 1000 is a member that supports the epitaxial layer 1005 and facilitates the deposition of the epitaxial layer 1005 , and may be, for example, a sapphire substrate, a semiconductor substrate, or a ceramic substrate.

[0250] For example, the first semiconductor layer 1005a, as a first conductive type semiconductor layer, may include a first conductive type dopant. For example, the second semiconductor layer 1005b, as an active layer, may generate light. Light having a wavelength corresponding to the energy band gap of the semiconductor material of the active layer 1005b may be generated. For example, the third semiconductor layer 1005c, as a second conductive type semiconductor layer, may include a second conductive type dopant. The first conductive type dopant may be an n-type dopant, and the second conductive type dopant may be a p-type dopant, but this is not limited.

[0251] A first semiconductor layer 1005 a , a second semiconductor layer 1005 b , and a third semiconductor layer 1005 c may be sequentially deposited on the wafer 1000 by using a deposition device, such as an MOCVD deposition device.

[0252] On the other hand, the recessed portion 1010 may be formed by etching concavely from the top surface of the epitaxial layer 1005 toward the inside along the second direction Y. That is, the third semiconductor layer 1005c and the second semiconductor layer 1005b of the epitaxial layer 1005 are removed and a portion of the top surface of the first semiconductor layer 1005a is removed, thereby forming the recessed portion 1010. Therefore, the depth of the recessed portion 1010 may be the sum of the thickness of the third semiconductor layer 1005c, the thickness of the second semiconductor layer 1005b, and the thickness of the portion of the top surface of the first semiconductor layer 1005a that is removed.

[0253] Even if the recess 1010 is formed, the epitaxial layers 1005 may be connected to each other through below the recess 1010. That is, since the bottom of the recess 1010 is the first semiconductor layer 1005a of the epitaxial layer 1005, the first semiconductor layers 1005a of the epitaxial layer 1005 corresponding to the left and right sides of the recess 1010, respectively, may be connected to each other through the first semiconductor layer 1005a below the recess 1010. The first semiconductor layer 1005a of the epitaxial layer 1005 on the left side of the recess 1010 may be defined as a first region 411, the first semiconductor layer 1005a of the epitaxial layer 1005 below the recess 1010 may be defined as a second region 412, and the first semiconductor layer 1005a of the epitaxial layer 1005 on the right side of the recess 1010 may be defined as a third region 413.

[0254] like Fig.16b As shown, an insulating layer 431a may be formed on the epitaxial layer 1005. The epitaxial layer 1005 includes dopants, so in order to insulate the epitaxial layer 1005, the insulating layer 431a may be formed.

[0255] like Fig.16c As shown, a pair of assembly wirings 441 and 442 may be formed in the recess 1010. For example, a metal film may be deposited on the insulating layer 431a and then patterned, so that a pair of assembly wirings 441 and 442 may be formed in the recess 1010. The pair of assembly wirings 441 and 442 may be formed long along the second direction Y. The pair of assembly wirings 441 and 442 may be formed of a metal having excellent conductivity. The pair of assembly wirings 441 and 442 may each include a magnetic layer that can be easily magnetized by a magnet.

[0256] like Fig.16d As shown, another insulating layer 431b may be formed on the pair of assembly wirings 441, 442 and the insulating layer 431a. The insulating layer 431a and the another insulating layer 431b may be formed of the same insulating material. Thus, the insulating layer 431 may be formed by the insulating layer 431a and the another insulating layer 431b. Therefore, the insulating layer 431 may prevent an electrical short circuit between the pair of assembly wirings 441, 442 and the epitaxial layer 1005, and protect the epitaxial layer 1005 from external foreign matter.

[0257] like Fig.16e As shown, a partition wall 1030 may be formed on the insulating layer 431. The partition wall 1030 is formed to be relatively thick, and thus may be formed of an organic material, but this is not limited.

[0258] like Fig.15As shown, the partition wall 1030 may include a plurality of assembly holes 1021 to 1024. The plurality of assembly holes 1021 to 1024 may be located on a pair of assembly wirings 441, 442 within the recess 1010.

[0259] On the other hand, referring to Fig.17a and Fig.17b , a plurality of semiconductor light emitting devices 422 , 423 , 425 , and 426 can be assembled on a pair of assembly wirings 441 , 442 by self-assembly.

[0260] Specifically, for self-assembly, after the wafer 1000 is mounted in a chamber filled with a fluid (not shown), a dielectrophoretic force may be formed by an AC voltage applied to a pair of assembly wirings 441, 442. As the magnet moves, the plurality of semiconductor light emitting devices 422, 423, 425, 426 in the fluid may move. The plurality of semiconductor light emitting devices 422, 423, 425, 426 may move in the fluid and be assembled to the plurality of assembly holes 1021 to 1024 on the wafer 1000. That is, the dielectrophoretic force formed by the pair of assembly wirings 441, 442 is formed in each of the plurality of assembly holes 1021 to 1024, so that under the action of the dielectrophoretic force, the plurality of semiconductor light emitting devices 422, 423, 425, 426 in motion may be assembled to the plurality of assembly holes 1021 to 1024, respectively.

[0261] The figure shows that the plurality of semiconductor light emitting devices 422 , 423 , 425 , and 426 have the same shape, but this is not a limitation.

[0262] For example, the plurality of semiconductor light emitting devices 422, 423, 425, 426 may have shapes different from each other. For example, the second semiconductor light emitting device 422 and the fifth semiconductor light emitting device 425 emitting green light may have a quadrilateral shape, and the third semiconductor light emitting device 423 and the sixth semiconductor light emitting device 426 emitting blue light may have a circular shape. For example, the second semiconductor light emitting device 422 and the fifth semiconductor light emitting device 425 emitting green light may have a circular shape, and the third semiconductor light emitting device 423 and the sixth semiconductor light emitting device 426 emitting blue light may have an elliptical shape. As described above, since the plurality of semiconductor light emitting devices 422, 423, 425, 426 have shapes different from each other, even if the plurality of semiconductor light emitting devices 422, 423, 425, 426 are mixed in the fluid in the chamber, they can be assembled to a pair of assembly wirings 441, 442 at the same time without assembly failure.

[0263] On the other hand, the plurality of assembly holes ( Fig.151021 to 1024) may have different shapes from each other. For example, when the second semiconductor light emitting device 422 and the fifth semiconductor light emitting device 425 have a quadrilateral shape, the corresponding assembly holes 1021 and 1024 may also have a quadrilateral shape. For example, when the third semiconductor light emitting device 423 and the sixth semiconductor light emitting device 426 have a circular shape, the corresponding assembly holes 1022 and 1023 may also have a circular shape.

[0264] Each of the plurality of semiconductor light emitting devices 422, 423, 425, 426 may be a prefabricated component. That is, each of the plurality of semiconductor light emitting devices 422, 423, 425, 426 may be manufactured using a series of semiconductor processes. Each of the plurality of semiconductor light emitting devices 422, 423, 425, 426 may include a first conductive semiconductor layer (not shown), an active layer (not shown), a second conductive semiconductor layer (not shown), and a magnetic layer ( Fig.20a 422-1, 423-1, 425-1, 426-1).

[0265] First, if Fig.18a , Fig.19a as well as Fig.20a As shown, due to the dielectrophoretic force formed on a pair of assembly wirings 441 and 442, a plurality of semiconductor light emitting devices 422, 423, 425, and 426 can be assembled to a plurality of assembly holes 1021 to 1024, respectively.

[0266] Then, if Fig.18b , Fig.19b as well as Fig.20b As shown, after the polymer is sprayed in a spraying manner, the polymer is removed, so that each of the plurality of semiconductor light emitting devices 422, 423, 425, and 426 can be attached to the insulating layer 431 by the polymer. Instead of the polymer, other materials can also be used. When the polymer is removed, the partition wall 1030 can also be removed together, but this is not limited.

[0267] On the other hand, referring to Fig.21 , a mask 1040 may be used for local patterning so that the first semiconductor layer 1005 a , ie, the first conductive semiconductor layer, may be exposed from the epitaxial layer 1005 .

[0268] Specifically, if Fig.22a As shown, after a portion of the epitaxial layer 1005 is blocked by the mask 1040, as shown in FIG. Figure 22bAs shown, the third semiconductor layer 1005c and the second semiconductor layer 1005b of the epitaxial layer 1005 that are not blocked by the mask 1040 can be removed, so that the first semiconductor layer 1005a is exposed. A portion of the top surface of the first semiconductor layer 1005a can also be removed, but this is not limited. Then, the mask 1040 can be removed.

[0269] like Fig.21 As shown, the third semiconductor layer 1005c and the second semiconductor layer 1005b can be removed from a portion of the epitaxial layer 1005 located on both sides of the second semiconductor light emitting device 422, the third semiconductor light emitting device 423, the fifth semiconductor light emitting device 425 and the sixth semiconductor light emitting device, so that the first semiconductor layer 1005a can be exposed.

[0270] On the other hand, refer to Fig.23 , a first common pad 443 and a second common pad 444 may be formed.

[0271] Specifically, if Fig.24a As shown, the first semiconductor layer 1005 a may be exposed from a portion of the epitaxial layer 1005 .

[0272] On the other hand, the insulating film 431 is patterned on the first built wiring 441 , so that the contact hole 471 through which the top surface of the first built wiring 441 is exposed can be formed.

[0273] Then, a conductive film is formed on the wafer 1000 and patterned, so that a first common pad 443 can be formed. The first common pad 443 can electrically connect the first semiconductor layer 1005a of the epitaxial layer 1005 and the first assembly wiring 441. That is, one side of the first common pad 443 can be located on the first semiconductor layer 1005a of the epitaxial layer 1005, and the other side of the first common pad 443 can be located on the first assembly wiring 441. For example, the first common pad 443 can extend from the first semiconductor layer 1005a of the epitaxial layer 1005 along the first direction X and be connected to the first assembly wiring 441 through the contact hole 471.

[0274] Likewise, the second common pad 444 may also be formed by the same method as the aforementioned method of forming the first common pad 443 .

[0275] On the other hand, although not shown, a plurality of contact holes 461 to 468 may be formed. For example, contact holes 462, 463, 466, 467 may be formed on the second semiconductor light emitting device 422, the third semiconductor light emitting device 423, the fifth semiconductor light emitting device 425, and the sixth semiconductor light emitting device 426, respectively. For example, contact holes 464, 468 may be formed on the first common pad 443 and the second common pad 444, respectively. For example, contact holes 461, 465 may be formed on the epitaxial layer 1005 on both sides of a pair of assembly wirings 441, 442. These contact holes 461 to 468 may be formed by removing the insulating layer 431.

[0276] On the other hand, refer to Fig.25 and Fig.26 The epitaxial layer 1005 may be patterned using a mask 1050 , so that a plurality of package regions 350 a for respectively forming a plurality of semiconductor light emitting device packages 350 may be formed on the wafer 1000 .

[0277] All layers of the epitaxial layer 1005, namely the first semiconductor layer 1005a, the second semiconductor layer 1005b and the third semiconductor layer 1005c, may be removed along the periphery of each of the plurality of packaging regions 350a. The first semiconductor layer 1005a, the second semiconductor layer 1005b and the third semiconductor layer 1005c are removed, so that the top surface of the wafer 1000, such as a sapphire substrate, may be exposed. The first semiconductor layer 1005a, the second semiconductor layer 1005b and the third semiconductor layer 1005c are removed, so that a recess 1060 may be formed between the plurality of packaging regions 350a.

[0278] As will be described later, a common connection electrode 450 is formed on the lower side of each of the plurality of package regions 350 a separated from the wafer 1000 , so that each of the plurality of package regions 350 a may become a plurality of semiconductor light emitting device packages 350 .

[0279] On the other hand, each of the plurality of package regions 350 a may include first to sixth semiconductor light emitting devices 421 to 426 , a pair of assembly wirings 441 , 442 , a first common pad 443 , and a second common pad 443 .

[0280] On the other hand, refer to Fig. 27 , each of the pad regions 350a may be separated from the wafer 1000. For example, the pad regions 350a may be separated from the wafer 1000 by irradiating a laser to a boundary surface between the epitaxial layer 1005 and the wafer 1000, but this is not limited thereto.

[0281] Then, the common connection electrode 450 is formed on the lower side of each of the pad regions 350a, thereby manufacturing the semiconductor light emitting device package 350 ( Figures 28a to 28d ).

[0282] Specifically, if Fig.28a As shown, the package regions 350 a may be separated from the wafer 1000 .

[0283] like Fig.28b As shown, the first semiconductor layer 1005a of the epitaxial layer 10005 may be etched to expose the insulating layer 431 below the pair of wiring harnesses 441 and 442. That is, the etching process of the first semiconductor layer 1005a may be performed until the insulating layer 431 is exposed.

[0284] As described above, even if the first semiconductor layer 1005a is removed by an etching process until the insulating layer 431 is exposed, a portion of the first semiconductor layer 1005a may still exist. Therefore, the epitaxial layer 1005 may be formed into the first semiconductor light emitting device 421 and the fourth semiconductor light emitting device 424 by the first semiconductor layer 1005a, the second semiconductor layer 1005b, and the third semiconductor layer 1005c. In this case, the first semiconductor layer 1005a may become the first conductive type semiconductor layer 421a, 424a of the first semiconductor light emitting device 421 and the fourth semiconductor light emitting device 424, the second semiconductor layer 1005b may become the active layer 421b, 424b of the first semiconductor light emitting device 421 and the fourth semiconductor light emitting device 424, and the third semiconductor layer 1005c may become the second conductive type semiconductor layer 1005c of the first semiconductor light emitting device 421 and the fourth semiconductor light emitting device 424.

[0285] like Fig.28c As shown, the insulating layer 431 below the pair of assembly wirings 441 and 442 may be etched to expose the pair of assembly wirings 441 and 442. Thus, a recess 430 separated by the insulating layer 431 may be formed between the pair of assembly wirings 441 and 442. Due to the recess 430, the insulating layer 431 may be penetrated from top to bottom.

[0286] like Fig.28d As shown, a metal film is deposited on the lower side of the encapsulation region 350 a so that a common connection electrode 450 may be formed.

[0287] For example, the common connection electrode 450 may be connected to the bottom surface of the first conductive semiconductor layer 421 a of the first semiconductor light emitting device 421 , and may be connected to the bottom surface of the first conductive semiconductor layer 424 a of the fourth semiconductor light emitting device 424 .

[0288] For example, the common connection electrode 450 may be in contact with the bottom surfaces of the pair of wiring harnesses 441 and 442 .

[0289] For example, the common connection electrode 450 may be connected to the lower sides of the second semiconductor light emitting device 422, the third semiconductor light emitting device 423, the fifth semiconductor light emitting device 425, and the sixth semiconductor light emitting device 426 through the recess 430 between the pair of assembly wirings 441 and 442. Specifically, the common connection electrode 450 may be connected to the lower sides of the bottom surface of the first conductive semiconductor layer (not shown) of the second semiconductor light emitting device 422, the bottom surface of the first conductive semiconductor layer (not shown) of the third semiconductor light emitting device 423, the bottom surface of the first conductive semiconductor layer (not shown) of the fifth semiconductor light emitting device 425, and the bottom surface of the first conductive semiconductor layer (not shown) of the sixth semiconductor light emitting device 426 through the recess 430 between the pair of assembly wirings 441 and 442.

[0290] For example, the first semiconductor light emitting device 421 to the sixth semiconductor light emitting device 426 may be connected by a common connection electrode 450. In addition, the first common pad 443 may be connected to one side of the first assembly wiring 441 of the pair of common electrodes 441 and 442, the second common pad 443 may be connected to one side of the second assembly wiring 442 of the pair of common electrodes 441 and 442, and the common connection electrode 450 may be connected to the other side of each of the pair of assembly wirings 441 and 442.

[0291] On the other hand, one side of the first to sixth semiconductor light emitting devices 421 to 426 may be connected to a plurality of connection lines ( Figure 7 The other sides of the first to sixth semiconductor light emitting devices 421 to 426 may be connected to the connection line 370-4 via the common connection electrode 450, a pair of assembly wirings 441, 442, and the first and second common pads 443 and 444. For example, the connection line 370-4 may be connected to the first and second common pads 443 and 444 through the contact holes 464, 468.

[0292] Therefore, when a voltage is applied to each of the first to sixth semiconductor light emitting devices 421 to 426 , light having a wavelength band corresponding to a current based on the voltage may be emitted from each of the first to sixth semiconductor light emitting devices 421 to 426 .

[0293] For example, when a first voltage is applied to the first semiconductor light-emitting device 421, a first current may flow sequentially through the first connection line 370-1, the first contact hole 461, the first semiconductor light-emitting device 421, the common connection electrode 450, the first assembly wiring 441, the first common pad 443, the fourth contact hole 464 and the fourth connection line 37-4, and may emit a first light having a wavelength band corresponding to the first current.

[0294] For example, when a second voltage is applied to the second semiconductor light-emitting device 422, a second current may flow sequentially through the second connection line 370-2, the second contact hole 462, the second semiconductor light-emitting device 422, the common connection electrode 450, the first assembly wiring 441, the first common pad 443, the fourth contact hole 464 and the fourth connection line 37-4, and may emit a second light having a wavelength band corresponding to the second current.

[0295] For example, when a third voltage is applied to the third semiconductor light-emitting device 423, a third current may flow through the third connection line 370-3, the third contact hole 463, the third semiconductor light-emitting device 423, the common connection electrode 450, the first assembly wiring 441, the first common pad 443, the fourth contact hole 464 and the fourth connection line 37-4 in sequence, and may emit a third light having a wavelength band corresponding to the third current.

[0296] For example, the first light may be red light, the second light may be green light, and the third light may be blue light, but this is not limited.

[0297] The aforementioned plurality of semiconductor light emitting device packages 350 are assembled into Figure 7 and Figure 8 The display device 300 is manufactured by mounting the display substrate 310 on the display substrate 310 and performing a post-process for electrical connection.

[0298] The semiconductor light emitting device package 350 is described in detail above. The semiconductor light emitting device package 350 includes semiconductor light emitting devices 422, 423, 425, 426 self-assembled on a pair of assembly wirings 441, 442 and semiconductor light emitting devices 421, 424 formed of respective epitaxial layers 1005 on both sides of the pair of assembly wirings 441, 442.

[0299] Alternatively, a semiconductor light emitting device package may be manufactured that includes a semiconductor light emitting device self-assembled in each of a pair of first assembly wirings and a pair of second assembly wirings and a semiconductor light emitting device formed of an epitaxial layer 1005 between the pair of first assembly wirings and the pair of second assembly wirings.

[0300] [Second embodiment]

[0301] The following explains Fig.29 A semiconductor light emitting device package according to a second embodiment of the present invention.

[0302] Fig.29 FIG. 1 is a top view showing a plurality of semiconductor light emitting device packages according to the second embodiment manufactured on a wafer.

[0303] like Fig.29 As shown, in the chip ( Figure 16a to Figure 1 6) can be formed with a plurality of pairs of assembly wiring 441-1 to 441-3, 442-1 to 442-3. The plurality of pairs of assembly wiring 441-1 to 441-3, 442-1 to 442-3 are formed in the pre-formed recess 1010, and can be formed by the aforementioned first embodiment ( Figures 16a to 16e ) is easy to understand, so detailed description is omitted.

[0304] A plurality of semiconductor light emitting devices 422 , 423 , 425 , and 426 emitting different lights from each other may be formed on the plurality of pairs of wiring harnesses 441 - 1 to 441 - 3 and 442 - 1 to 442 - 3 , respectively.

[0305] For example, a plurality of semiconductor light emitting devices 422 emitting the second light may be formed on a pair of first assembly wirings 441-1 and 442-1, a plurality of semiconductor light emitting devices 423 and 426 emitting the third light may be formed on a pair of second assembly wirings 441-2 and 442-2, and a plurality of semiconductor light emitting devices 425 emitting the second light may be formed on a pair of third assembly wirings 441-3 and 442-3. As described above, the plurality of semiconductor light emitting devices 422 and 425 emitting the second light and the plurality of semiconductor light emitting devices 423 and 426 emitting the third light may be alternately formed on each pair of assembly wirings 441-1 to 441-3 and 442-1 to 442-3.

[0306] On the other hand, a plurality of semiconductor light emitting devices 421, 424 emitting the first light may be formed from the epitaxial layer 1005 between a pair of assembly wirings 441-1 to 441-3, 442-1 to 442-3. For example, each of the epitaxial layer 1005 between a pair of first assembly wirings 441-1, 442-1 and a pair of second assembly wirings 441-2, 442-2 and the epitaxial layer 1005 between a pair of second assembly wirings 441-2, 442-2 and a pair of third assembly wirings 441-3, 442-3 may be formed with a plurality of semiconductor light emitting devices 421, 424 emitting the first light.

[0307] The semiconductor light emitting devices 421 and 424 emitting the first light may be first semiconductor light emitting devices, the plurality of semiconductor light emitting devices 422 and 425 emitting the second light may be second semiconductor light emitting devices, and the plurality of semiconductor light emitting devices 423 and 426 emitting the third light may be third semiconductor light emitting devices.

[0308] On the other hand, common pads 443 , 444 may be formed on one side of the first semiconductor light emitting devices 421 , 424 .

[0309] The common pads 443 and 444 may extend to both sides and be connected to a pair of assembly wirings 441-1 to 441-3, 442-1 to 442-3. For example, the first side of the first common pad 443 may be connected to the second assembly wiring 442-1 of a pair of first assembly wirings 441-1 and 442-1, and the second side of the first common pad 443 may be connected to the first assembly wiring 441-2 of a pair of second assembly wirings 441-2 and 442-2. For example, the first side of the second common pad 444 may be connected to the second assembly wiring 442-2 of a pair of second assembly wirings 441-2 and 442-2, and the second side of the second common pad 444 may be connected to the first assembly wiring 441-3 of a pair of third assembly wirings 441-3 and 442-3.

[0310] On the other hand, although not shown, the plurality of first to sixth semiconductor light emitting devices 421 to 426 may be commonly connected by a common connection electrode 450. The common connection electrode 450 may be formed by the first embodiment ( Figures 16a to 16e ) is easy to understand, so detailed description is omitted.

[0311] On the other hand, Fig.29 As shown, a semiconductor light emitting device package 351, 351' including a first semiconductor light emitting device 421, 424, a second semiconductor light emitting device 422, 425, and a third semiconductor light emitting device 423, 426 can be obtained. In this case, the semiconductor light emitting device package 351, 351' can be a triangle when viewed from above. Therefore, a plurality of package regions 350a having a triangle can be separated on the wafer 1000, and a common connection electrode 450 is formed on the lower side of each of the separated plurality of package regions 350a, so that a plurality of semiconductor light emitting device packages 351, 351' can be manufactured.

[0312] For example, a first semiconductor light emitting device package 351 may be obtained from the first semiconductor light emitting device 421 , the second semiconductor light emitting device 422 , and the third semiconductor light emitting device 423 , and a second semiconductor light emitting device package 351 ′ may be obtained from the first semiconductor light emitting device 424 , the second semiconductor light emitting device 425 , and the third semiconductor light emitting device 426 .

[0313] On the other hand, although not shown, one semiconductor light emitting device package may be obtained from six semiconductor light emitting devices 421 to 426. When viewed from above, the semiconductor light emitting device package may be a parallelogram, but this is not limited.

[0314] In this case, if Fig.13 As shown, the semiconductor light emitting device package may include two pixels PX1 and PX2. That is, the first pixel PX1 may be composed of the first semiconductor light emitting device 421 to the third semiconductor light emitting device 423, and the second pixel PX2 may be composed of the fourth semiconductor light emitting device 424 to the sixth semiconductor light emitting device 426. Figure 7 In the case of the assembly hole 340H, each pixel PX includes two pixels PX1 and PX2, so the number of pixels is doubled, so an ultra-high resolution display can be achieved.

[0315] In addition, if Fig.14 As shown, the semiconductor light emitting device package may include a pixel PX1 and a virtual pixel PX_D. That is, the pixel PX1 may be composed of the first semiconductor light emitting device 421 to the third semiconductor light emitting device 423, and the virtual pixel PX_D may be composed of the fourth semiconductor light emitting device 424 to the sixth semiconductor light emitting device 426. Therefore, in the semiconductor light emitting device package 350 configured at Figure 7 In the case of the assembly hole 340H shown, the pixel PX displays an image, while the dummy pixel PX_D does not display an image.

[0316] If a specific semiconductor light emitting device of the pixel PX1 fails, a semiconductor light emitting device that emits light of the same color as the light emitted from the specific semiconductor light emitting device may be selected in the virtual pixel PX_1, and the specific semiconductor light emitting device that fails in the pixel PX1 may be replaced with the semiconductor light emitting device selected in the virtual pixel PX_D. Therefore, regardless of the failure of the semiconductor light emitting device in the pixel PX1, a desired color image may be always displayed.

[0317] On the other hand, the above-mentioned display device may be a display panel. That is, in the embodiment, the display device and the display panel may be understood to have the same meaning. In the embodiment, the display device in a practical sense may include a display panel and a controller (or processor) capable of controlling the display panel in order to display an image.

[0318] The above detailed description should be understood as illustrative in all aspects and should not be interpreted as limiting. The scope of the embodiment should be determined by reasonable interpretation of the attached claims, and all changes within the equivalent scope of the embodiment are included in the scope of the embodiment.

[0319] Industrial Applicability

[0320] The embodiment can be applied to the display field of displaying images or information. The embodiment can be applied to the display field of displaying images or information using semiconductor light emitting devices. The semiconductor light emitting device can be a micron-scale semiconductor light emitting device or a nano-scale semiconductor light emitting device.

[0321] For example, the embodiments may be applied to a TV, a sign, a smartphone, a mobile phone, a mobile terminal, a HUD for a car, a backlight unit for a notebook computer, or a display device for VR or AR.

Claims

1. A semiconductor light emitting device package, wherein: include: A common connection electrode having a first region and a second region; A first semiconductor light emitting device, located on the first region of the common connection electrode; a pair of first assembly wirings, located on the second region of the common connection electrode; as well as The second semiconductor light emitting device is located on the pair of first assembly wirings.

2. The semiconductor light emitting device package according to claim 1, wherein: A third semiconductor light emitting device is included and is located on the pair of first assembly wirings.

3. The semiconductor light emitting device package according to claim 2, wherein: The common connection electrode has a third region; The second area is located between the first area and the third area; And the semiconductor light emitting device package comprises: a fourth semiconductor light emitting device, located on the third region of the common connection electrode; as well as A fifth semiconductor light emitting device and a sixth semiconductor light emitting device are located on the pair of first assembly wirings.

4. The semiconductor light emitting device package according to claim 3, wherein: The first semiconductor light emitting device and the fourth semiconductor light emitting device are red semiconductor light emitting devices; The second semiconductor light emitting device and the fifth semiconductor light emitting device are green semiconductor light emitting devices; The third semiconductor light emitting device and the sixth semiconductor light emitting device are blue semiconductor light emitting devices.

5. The semiconductor light emitting device package according to claim 4, wherein: The first semiconductor light emitting device, the second semiconductor light emitting device and the third semiconductor light emitting device constitute a first pixel; The fourth semiconductor light emitting device, the fifth semiconductor light emitting device, and the sixth semiconductor light emitting device constitute a second pixel.

6. The semiconductor light emitting device package according to claim 4, wherein: The first semiconductor light emitting device, the second semiconductor light emitting device and the third semiconductor light emitting device constitute a pixel; The fourth semiconductor light emitting device, the fifth semiconductor light emitting device, and the sixth semiconductor light emitting device constitute a virtual pixel.

7. The semiconductor light emitting device package according to claim 4, wherein: The second semiconductor light emitting device, the third semiconductor light emitting device, the fifth semiconductor light emitting device, and the sixth semiconductor light emitting device are arranged between the first semiconductor light emitting device and the fourth semiconductor light emitting device.

8. The semiconductor light emitting device package according to claim 4, wherein: The third semiconductor light emitting device and the sixth semiconductor light emitting device are arranged between the second semiconductor light emitting device and the fifth semiconductor light emitting device.

9. The semiconductor light emitting device package according to claim 3, wherein: The common connection electrode is connected to the lower side of each of the first semiconductor light emitting device and the fourth semiconductor light emitting device; The common connection electrode is connected to the lower sides of each of the second semiconductor light emitting device, the third semiconductor light emitting device, the fifth semiconductor light emitting device, and the sixth semiconductor light emitting device between the pair of first assembly wirings.

10. The semiconductor light emitting device package according to claim 9, wherein: The common connection electrode is connected to the lower side of each of the pair of first assembly wirings.

11. The semiconductor light emitting device package according to claim 3, wherein: include: A first common pad, located at one side of the first semiconductor light emitting device; as well as The second common pad is located at one side of the fourth semiconductor light emitting device.

12. The semiconductor light emitting device package according to claim 11, wherein: The first common pad is connected to a first assembly wiring of the pair of first assembly wirings; The second common pad is connected to a second wiring harness of the pair of first wiring harnesses.

13. The semiconductor light emitting device package according to claim 11, wherein: The first common pad and the second common pad are located on a diagonal line.

14. The semiconductor light emitting device package according to claim 3, wherein: The first semiconductor light emitting device and the fourth semiconductor light emitting device include GaAs-based semiconductor materials; Each of the second semiconductor light emitting device, the third semiconductor light emitting device, the fifth semiconductor light emitting device, and the sixth semiconductor light emitting device includes a GaN-based semiconductor material.

15. The semiconductor light emitting device package according to claim 3, wherein: Each of the second, third, fifth and sixth semiconductor light emitting devices includes a magnetic layer.

16. The semiconductor light emitting device package according to claim 1, wherein: The common connection electrode includes a reflective layer.

17. The semiconductor light emitting device package according to claim 1, wherein: The common connection electrode has a third region; The first area is located between the second area and the third area; And the semiconductor light emitting device package comprises: a pair of second assembly wirings, located on the third region of the common connection electrode; as well as The third semiconductor light emitting device is located on the pair of second assembly wirings.

18. The semiconductor light emitting device package according to claim 17, wherein: At least one of the common connection electrode, the pair of first built-up wirings, and the pair of second built-up wirings includes a magnetic layer.

19. A display device, wherein: include: A panel substrate including a plurality of pixels; A pair of first assembly wirings corresponding to each of the plurality of pixels; A partition wall including an assembly hole located on the pair of first assembly wirings; as well as A semiconductor light emitting device package is located in the assembly hole; The semiconductor light emitting device package comprises: A common connection electrode having a first region and a second region; A first semiconductor light emitting device, located on the first region of the common connection electrode; a pair of second assembly wirings, located on the second region of the common connection electrode; and The second semiconductor light emitting device and the third semiconductor light emitting device are located on the pair of second assembly wirings.

Images