High-uniformity metallization coating method and device for fused quartz hemispherical harmonic oscillator

Abstract

The invention relates to the field of hemispherical resonator gyroscope manufacturing, in particular to a high-uniformity metallization coating method and device for a fused quartz hemispherical resonator. The method comprises the following steps of: fixing a special tool of the hemispherical harmonic oscillator and the hemispherical harmonic oscillator; the distance between the surface of the sputtering target and the surface of the special tool, the relative distance between the center of the sputtering target and the center of the special tool and the included angle between the hemispherical harmonic oscillator and the horizontal plane of the special tool are adjusted; carrying out surface cleaning on the hemispherical harmonic oscillator, and then carrying out film plating; the film uniformity distribution condition is obtained by sampling an accompanying plating sheet and measuring a film layer step.

Description

Technical Field

[0001] The present invention relates to the field of manufacturing hemispherical resonator gyroscopes, and more specifically, to a high-uniformity metallization coating method and device for fused quartz hemispherical resonators. Background Art

[0002] The hemispherical resonant gyroscope is considered to be the most ideal component in the 21st century advanced strapdown inertial navigation system due to its advantages such as extremely high alignment accuracy, long-term drift stability, low power consumption, long life (more than 15 years), low output signal noise, small size and light weight. It plays a decisive role in the flight accuracy and attitude stability of aircraft and strategic and tactical weapons. With the development of deep space exploration and a new generation of small strategic weapons, the hemispherical resonant gyroscope has become the development trend and focus of the future inertial navigation field.

[0003] The hemispherical resonator is the core component of the hemispherical resonator gyroscope. The hemispherical resonator is made of low expansion coefficient fused quartz glass material through ultra-precision processing, and has extremely high dimensional stability and vibration stability. Metallization coating treatment on the insulating surface of the resonator is a key technology for preparing the hemispherical resonator. However, the uneven metal film layer will cause the mass asymmetry of the hemispherical resonator, increase the energy loss of the vibration system, change the original vibration form and cause the natural frequency to crack, that is, produce frequency difference, and reduce the quality factor of the hemispherical resonator.

[0004] The existing technology mainly explores and studies the coating parameters in the thin film preparation process. However, the relative position of the sputtering target and the hemispherical resonator sample has a significant impact on the uniformity of the thin film, and there are currently no reports on related content. Summary of the invention

[0005] In view of the defects in the prior art, the purpose of the present invention is to provide a high-uniformity metallization coating method and device for a fused quartz hemispherical resonator, which can achieve high-uniformity coating on the insulating surface of the hemispherical resonator by adjusting the coating process parameters, improve the uniformity of the thin film on the hemispherical resonator surface, and reduce the problems of quality reduction and increased frequency difference caused by uneven film.

[0006] To achieve the above object, the present invention provides the following technical solutions:

[0007] In a first aspect, the present invention provides a high uniformity metallization coating method for a fused silica hemispherical resonator, comprising the following steps:

[0008] Step (1) fixing a special tool for the hemispherical resonator, fixing the hemispherical resonator on the special tool;

[0009] Step (2) adjusting the distance between the surface of the sputtering target and the surface of the special tooling, that is, the target-substrate distance H;

[0010] Step (3) adjusting the relative distance between the center of the sputtering target and the center of the special tooling, i.e., the eccentricity D;

[0011] Step (4) adjusting the angle between the hemispherical resonator and the horizontal plane of the special tooling, i.e., the sputtering angle α;

[0012] Step (5) evacuating the coating equipment and cleaning the surface of the hemispherical resonator;

[0013] After the surface cleaning is completed in step (6), the hemispherical resonator is plated to form a composite conductive film, and then naturally cooled and the furnace is opened to take out the component;

[0014] Step (7) takes out the accompanying plating sheet on the surface of the hemispherical resonator, removes the tape attached to the surface of the accompanying plating sheet, measures the film layer steps, and obtains the film uniformity distribution.

[0015] Furthermore, in step (2), the target-substrate distance H is adjusted to 100-300 mm, preferably 200 mm.

[0016] Furthermore, in step (3), the eccentricity D is adjusted to 30-80 mm, preferably 40 mm.

[0017] Furthermore, in step (4), the sputtering angle α is adjusted to 20° to 80°, preferably 60°.

[0018] Furthermore, in step (5), the surface cleaning includes discharge cleaning, and the discharge cleaning adopts glow discharge cleaning or ion beam discharge cleaning, preferably ion beam discharge cleaning.

[0019] Furthermore, the discharge cleaning condition is: the discharge time is 5 to 30 minutes, preferably 15 minutes.

[0020] Furthermore, in step (6), the coating includes: first coating the inner surface and lip edge of the hemispherical resonator to form a transition metal film, and then coating the surface of the transition metal film to form a conductive film.

[0021] Furthermore, the coating is performed by magnetron sputtering coating or high-power pulsed magnetron sputtering coating, preferably magnetron sputtering coating.

[0022] Furthermore, the raw material of the transition metal film is one of chromium or titanium, preferably titanium.

[0023] Furthermore, the thickness of the transition metal film is 5-10 nm, preferably 10 nm.

[0024] Furthermore, the raw material of the conductive film is one of gold, platinum or iridium, preferably gold.

[0025] Furthermore, the thickness of the conductive film is 40-100 nm, preferably 80 nm.

[0026] Furthermore, in step (7), the accompanying plating sheets are small square pieces with a size of 5 mm×5 mm, and the accompanying plating sheets are arranged closely from the top of the ball to the lip edge of the hemispherical resonator. The number of the accompanying plating sheets is 3 to 5, preferably 3.

[0027] In a second aspect, the present invention provides a high-uniformity metallization coating device for a fused quartz hemispherical resonator, wherein the device comprises: a special tooling for the hemispherical resonator, which is used to fix the hemispherical resonator and realize simultaneous revolution and rotation.

[0028] The technical solution of the present invention has the following advantages:

[0029] The present invention adjusts the coating process parameters to control the relative position of the sputtering target and the hemispherical resonator to be coated, thereby improving the uniformity of the coating of the hemispherical resonator and reducing the problems of reduced quality factor and increased frequency difference caused by uneven film. The present invention clarifies the influence of the relative position between the sputtering target and the hemispherical resonator on the uniformity of the film, and can significantly improve the uniformity of the film on the surface of the hemispherical resonator. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and, together with the description, serve to explain the principles of the invention.

[0031] Figure 1 It is a schematic flow chart of a method for high uniformity metallization coating of a fused quartz hemispherical resonator provided by an embodiment of the present invention;

[0032] Figure 2 It is a schematic diagram of a high uniformity metallization coating device for a fused quartz hemispherical resonator provided by an embodiment of the present invention.

[0033] Figure 3 Schematic diagram of sampling points for film thickness testing provided by an embodiment of the present invention;

[0034] Figure 4 It is a film thickness distribution diagram and uniformity test result diagram provided by an embodiment of the present invention.

[0035] Reference numerals:

[0036] 1. Sputtering target, 2. Hemispherical resonator, 3. Special tooling for hemispherical resonator;

[0037] H. The distance between the surface of the sputtering target and the surface of the special tooling, i.e. the target-to-substrate distance;

[0038] D. The relative distance from the center of the sputtering target to the center of the special tooling, i.e. the eccentricity;

[0039] α. The angle between the hemispherical resonator and the horizontal plane of the special tooling, that is, the sputtering angle. DETAILED DESCRIPTION

[0040] The following description and the drawings sufficiently illustrate specific embodiments of the invention to enable those skilled in the art to practice them.

[0041] It should be clear that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0042] When the following description refers to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Instead, they are only examples of systems and methods consistent with some aspects of the present invention as detailed in the attached claims.

[0043] In the description of the present invention, it should be understood that the terms "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying relative importance. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances. In addition, in the description of the present invention, unless otherwise specified, "plurality" refers to two or more. "And / or" describes the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. The character " / " generally indicates that the previously associated objects are in an "or" relationship.

[0044] See also Figure 1 , which is a schematic flow chart of a method for high uniformity metallization coating of a fused silica hemispherical resonator according to an embodiment of the present invention. Figure 1As shown, the method of the embodiment of the present invention may include the following steps: fixing the special tooling of the hemispherical resonator and the hemispherical resonator; adjusting the distance between the surface of the sputtering target and the surface of the special tooling, that is, the target-base distance H; adjusting the relative distance from the center of the sputtering target to the center of the special tooling, that is, the eccentricity D; adjusting the angle between the hemispherical resonator and the horizontal plane of the special tooling, that is, the sputtering angle α; evacuating the coating equipment and cleaning the surface of the hemispherical resonator; after the surface cleaning is completed, coating the hemispherical resonator to form a composite conductive film, and then naturally cooling and opening the furnace to remove the piece; taking out the accompanying coating sheet on the surface of the hemispherical resonator, removing the tape on its surface, measuring the film layer steps, and obtaining the film uniformity distribution. The details are as follows:

[0045] Step (1) Fixing the special tooling of the hemispherical resonator and the hemispherical resonator. More specifically, the cavity of the coating equipment is opened, the special tooling of the hemispherical resonator is fixed on the working turntable of the coating equipment, and the hemispherical resonator is fixed on the special tooling.

[0046] Step (2) adjusts the distance between the surface of the sputtering target and the surface of the special tooling, that is, the target-substrate distance H. More specifically, the distance between the surface of the sputtering target and the surface of the special tooling (target-substrate distance H) is adjusted to 100-300 mm, and in this embodiment, the target-substrate distance H is preferably 200 mm.

[0047] Step (3) adjusts the relative distance from the center of the sputtering target to the center of the special tooling, that is, the eccentricity D. More specifically, the relative distance (eccentricity D) from the center of the sputtering target to the center of the special tooling is adjusted to 30-80 mm, and in this embodiment, the eccentricity D is preferably 40 mm.

[0048] Step (4) adjusting the angle between the hemispherical resonator and the horizontal plane of the special tooling, i.e., the sputtering angle α. More specifically, the angle between the hemispherical resonator and the horizontal plane of the special tooling (sputtering angle α) is adjusted to 20° to 80°, and in this embodiment, the sputtering angle α is preferably 60°.

[0049] Step (5) evacuates the coating equipment and cleans the surface of the hemispherical resonator. More specifically, evacuates the coating equipment and cleans the hemispherical resonator by glow discharge or ion beam discharge for 5 to 30 minutes. In this embodiment, ion beam discharge cleaning is used for 15 minutes.

[0050] After the surface cleaning is completed in step (6), the hemispherical resonator is plated to form a composite conductive film, and then naturally cooled and the furnace is opened to remove the parts. More specifically, after the surface cleaning is completed, the inner surface and the edge of the lip of the hemispherical resonator are first plated to form a transition metal film, and then the surface of the transition metal film is plated to form a conductive film. The coating is performed by magnetron sputtering or high-power pulsed magnetron sputtering. The raw material of the transition metal film is one of chromium and titanium or their alloys, and the thickness of the transition metal film is 5 to 10 nm; the raw material of the conductive film is one of gold, platinum, iridium or their alloys, and the thickness of the conductive film is 40 to 100 nm. In this embodiment, magnetron sputtering technology is used, the raw material of the transition metal film is titanium, the raw material of the conductive film is gold, the thickness of the transition metal film is 10 nm, and the thickness of the conductive film is 80 nm.

[0051] Step (7) Take out the accompanying plating sheet on the surface of the hemispherical resonator, remove the tape attached to its surface, measure the film layer steps, and obtain the film uniformity distribution. Figure 3 The accompanying plating sheet is a small square piece of 5mm×5mm in size, and the arrangement is arranged from the top of the hemispherical resonator to the lip edge in sequence. The number of accompanying plating sheets is 3 to 5. Before measuring the film step, take the sampling points of the upper, middle and lower areas of each accompanying plating sheet and record them as 1#...9# respectively, such as Figure 3 As shown, the film thickness of the hemispherical resonator curved surface coating is then measured. In this embodiment, the number of the accompanying coating sheets is 3.

[0052] The following are embodiments of the device of the present invention, which can be used to implement the method embodiments of the present invention. For details not disclosed in the device embodiments of the present invention, please refer to the method embodiments of the present invention.

[0053] See also Figure 2 , which shows a high uniformity metallization coating device for fused quartz hemispherical resonator provided by an embodiment of the present invention. The device comprises: a sputtering target 1, a hemispherical resonator 2, and a special tooling 3 for the hemispherical resonator.

[0054] The sputtering target 1 is used to coat the hemispherical resonator 2;

[0055] The special tooling 3 for the hemispherical resonator is used to fix the hemispherical resonator 2 .

[0056] It should be noted that the high uniformity metallization coating device for fused quartz hemispherical resonator provided in the above embodiment only uses the above components as examples when performing high uniformity metallization coating for fused quartz hemispherical resonator. In practical applications, the above components can be distributed and completed by different components as needed, that is, the internal structure of the device is divided into different functional components to complete all or part of the functions described above. In addition, the high uniformity metallization coating device for fused quartz hemispherical resonator provided in the above embodiment and the high uniformity metallization coating method embodiment for fused quartz hemispherical resonator belong to the same concept, and the embodiment and implementation process thereof are detailed in the method embodiment, which will not be repeated here.

[0057] The high uniformity metallization coating method and device for fused quartz hemispherical resonator provided in the embodiment of the present invention improves the uniformity of the coating of the hemispherical resonator by adjusting the coating process parameters and controlling the relative position of the sputtering target and the hemispherical resonator to be coated, thereby reducing the problems of reduced quality factor and increased frequency difference caused by uneven film. Specifically, adjusting the coating process parameters includes: adjusting the distance from the sputtering target to the surface of the special tooling (i.e., the target-base distance H), adjusting the relative distance from the center of the sputtering target to the center of the special tooling (i.e., the eccentricity D), adjusting the angle between the hemispherical resonator and the horizontal plane of the special tooling (i.e., the sputtering angle α), controlling the time of discharge cleaning, optimizing the coating raw materials, and controlling the thickness of the transition metal film and the thickness of the conductive film.

[0058] The embodiment of the present invention uses a plating sheet to measure the film thickness of the coating on the curved surface of the hemispherical resonator. The plating sheet is 3 to 5 small square pieces of 5 mm × 5 mm in size, which are arranged closely from the top of the hemispherical resonator to the lip edge. Take sampling points in the upper, middle and lower areas of each plating sheet, and record them as 1#, 2#, 3#...9# respectively. Figure 3 As shown, the coating thickness is measured at 9 sampling points. The measurement results are shown in Figure 4 . Combined Figure 4 It can be seen that the uniformity of the thin film obtained by using the embodiment of the present invention is controlled within ±5%, which meets the uniformity requirement of the thin film for the metallization of the hemispherical resonator.

[0059] The high-uniformity metallization coating method and device for fused quartz hemispherical resonators provided in the embodiments of the present invention clarify the influence of the relative position between the sputtering target and the hemispherical resonator on the uniformity of the thin film. By adjusting the coating process parameters and controlling the relative position of the sputtering target and the hemispherical resonator to be coated, the uniformity of the thin film on the surface of the hemispherical resonator can be significantly improved.

[0060] Obviously, the above embodiments are merely examples for the purpose of clear explanation, and are not intended to limit the implementation methods. For those skilled in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the implementation methods here. The obvious changes or modifications derived therefrom are still within the scope of protection of the invention.

Claims

1. A high uniformity metallization coating method for a fused silica hemispherical resonator, characterized in that: The following steps are involved: Step (1) fixing a special tool for the hemispherical resonator, fixing the hemispherical resonator on the special tool; Step (2) adjusting the distance between the surface of the sputtering target and the surface of the special tooling, that is, the target-substrate distance H; Step (3) adjusting the relative distance between the center of the sputtering target and the center of the special tooling, i.e., the eccentricity D; Step (4) adjusting the angle between the hemispherical resonator and the horizontal plane of the special tooling, i.e., the sputtering angle α; Step (5) evacuating the coating equipment and cleaning the surface of the hemispherical resonator; After the surface cleaning is completed in step (6), the hemispherical resonator is plated to form a composite conductive film, and then naturally cooled and the furnace is opened to take out the component; Step (7) takes out the small-sized accompanying plating sheet on the surface of the hemispherical resonator, removes the tape attached to the surface of the accompanying plating sheet, measures the film layer steps, and obtains the uniformity distribution of the thin film.

2. The high uniformity metallization coating method for fused silica hemispherical resonator according to claim 1, characterized in that: In step (2), the target-substrate distance H is adjusted to 100-300 mm.

3. The high uniformity metallization coating method for fused silica hemispherical resonator according to claim 1, characterized in that: In step (3), the eccentricity D is adjusted to 30-80 mm.

4. The high uniformity metallization coating method for fused silica hemispherical resonator according to claim 1, characterized in that: In step (4), the sputtering angle α is adjusted to 20° to 80°.

5. The high uniformity metallization coating method for fused silica hemispherical resonator according to claim 1, characterized in that: In step (5), the surface cleaning includes discharge cleaning, and the discharge cleaning adopts glow discharge cleaning or ion beam discharge cleaning. The conditions of the discharge cleaning are: the discharge time is 5 to 30 minutes.

6. The high uniformity metallization coating method for fused silica hemispherical resonator according to claim 1, characterized in that: In step (6), the coating includes: first coating the inner surface and lip edge of the hemispherical resonator to form a transition metal film, and then coating the surface of the transition metal film to form a conductive film; the coating is performed by magnetron sputtering coating or high-power pulsed magnetron sputtering coating.

7. The high uniformity metallization coating method for fused silica hemispherical resonator according to claim 1, characterized in that: The raw material of the transition metal film is one of chromium or titanium metal, and the thickness of the transition metal film is 5-10nm; the raw material of the conductive film is one of gold, platinum or iridium, and the thickness of the conductive film is 40-100nm.

8. The high uniformity metallization coating method for fused silica hemispherical resonator according to claim 1, characterized in that: In step (7), the accompanying plating sheets are square blocks with a size of 5 mm×5 mm. The accompanying plating sheets are arranged closely from the top of the ball to the lip edge of the hemispherical resonator, and the number of the accompanying plating sheets is 3 to 5.

9. A high uniformity metallization coating device for a fused silica hemispherical resonator, characterized in that: The special tooling for the hemispherical resonator is used to fix the hemispherical resonator and realize the simultaneous revolution and rotation.

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