Vapor deposition equipment

Abstract

The vapor deposition equipment provided by the embodiment of the invention comprises a cavity with an opening part, and a target material is fixed at the opening part and is used for sputtering a deposition material; the carrying table is arranged in the cavity, is positioned below the opening part and is used for carrying a wafer; and the shielding structure is arranged in the cavity, is positioned between the inner wall of the cavity and the target material, and is used for blocking a path between the cavity and the deposition material and exposing a to-be-sputtered region of the wafer. By the adoption of the technical scheme, the cleanliness of the interior of the cavity can be improved.

Description

Technical Field

[0001] The embodiments of the present invention relate to the field of semiconductor technology, and in particular to a vapor deposition device. Background Art

[0002] In the semiconductor manufacturing process, it is usually necessary to deposit a thin film on the surface of the wafer. During the thin film deposition process, the target material located above the wafer sputters the material onto the surface of the wafer. During the sputtering process, the cleanliness inside the chamber will be reduced.

[0003] In this case, how to provide a technical solution to improve the cleanliness inside the cavity has become a technical problem that needs to be solved urgently. Summary of the invention

[0004] In view of this, an embodiment of the present disclosure provides a vapor deposition device that can improve the cleanliness of the interior of a chamber.

[0005] The embodiment of the present disclosure provides a vapor deposition device, comprising: a cavity having an opening, the opening having a target material fixed thereto, the target material sputtering a deposition material; a carrier disposed in the cavity and below the opening, for carrying a wafer; and a shielding structure disposed in the cavity and between an inner wall of the cavity and the target material, so as to block a path between the cavity and the deposition material and expose an area of ​​the wafer to be sputtered.

[0006] Optionally, a trapezoidal groove is provided on the inner wall of the cavity, and the trapezoidal groove includes a first groove and a second groove, and the outer diameter of the first groove is larger than the outer diameter of the second groove; wherein the target material is located above the bottom of the first groove, and the shielding structure is located between the second groove and the target material.

[0007] Optionally, the shielding structure includes: a first shielding member and a second shielding member, the first shielding member is located between the second groove and the target material and distributed along the circumference of the carrier; the second shielding member is buckled on the first shielding member and exposes the area of ​​the wafer to be sputtered.

[0008] Optionally, the first shielding member includes a bottom wall, a first side wall and a second side wall, the first side wall and the second side wall are arranged opposite to each other and connected through the bottom wall; wherein a protrusion is provided on the first side wall, and the protrusion is clamped between the second groove and the target material.

[0009] Optionally, along a direction perpendicular to the surface of the carrier, a top height of the first side wall is higher than a top height of the second side wall;

[0010] The top height of the second side wall is higher than the top height of the carrier.

[0011] Optionally, a groove is provided on the target material; and the top of the first side wall is clamped in the groove.

[0012] Optionally, the second shielding member includes a first part and a second part; wherein the first part is located above the side wall between the first side wall and the second side wall, the second part is located on the second side wall, and a projection of the second part is at least partially located on the carrier.

[0013] Optionally, a side of the second part facing the carrier has a protrusion facing the first part, and the protrusion is adapted to the shape of the carrier.

[0014] Optionally, the vapor deposition equipment also includes: a calibration part for calibrating the coaxiality of the shielding structure and the carrier to determine the target position of the shielding structure; wherein the target position of the shielding structure is: the position of the shielding structure when the shielding structure is concentrically aligned with the carrier.

[0015] Optionally, the calibration piece has a first end and a second end, and a radial dimension of the first end is different from a radial dimension of the second end.

[0016] Compared with the prior art, the technical solution of the embodiment of the present disclosure has the following advantages:

[0017] In the vapor deposition equipment provided by the embodiment of the present disclosure, a shielding structure is provided in the cavity and is located between the inner wall of the cavity and the target material. Since the shielding structure can block the path between the cavity and the deposition material, when the deposition material is sputtered to the to-be-sputtered area of ​​the wafer through the target material, the sputtering of the deposition material into the cavity can be reduced or avoided, thereby improving the cleanliness of the cavity. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings required for use in the embodiments of the present disclosure or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0019] Figure 1 A cross-sectional schematic diagram of a vapor deposition device in an embodiment of the present disclosure is shown.

[0020] Figure 2 A schematic structural diagram of a first shielding member in an embodiment of the present disclosure is shown.

[0021] Figure 3 A schematic structural diagram of a second shielding member in an embodiment of the present disclosure is shown.

[0022] Figure 4 A schematic structural diagram of a calibration component in an embodiment of the present disclosure is shown.

[0023] Figure 5 A schematic diagram for calibrating the concentricity of a shielding structure and a carrier is shown. DETAILED DESCRIPTION

[0024] As described in the background technology, the cleanliness of the cavity will be reduced during the sputtering process. This is because: during the sputtering process, the deposition path of the material is relatively messy. In addition to being deposited on the wafer, the remaining material will be sputtered to other parts around the cavity. For example, the material is sputtered to the edge of the carrier. This long-term accumulation of the plating phenomenon will form a thicker film on the edge of the carrier, which can easily cause the risk of wafer sticking, slipping and breaking.

[0025] To solve the above technical problems, an embodiment of the present disclosure provides a vapor deposition device, comprising: a cavity having an opening, to which a target material is fixed, and the target material sputters and deposits material; a carrier arranged in the cavity and below the opening, for carrying a wafer; and a shielding structure arranged in the cavity and between an inner wall of the cavity and the target material to block the path between the cavity and the deposition material and expose the wafer area to be sputtered.

[0026] When using the vapor deposition equipment in the embodiment of the present disclosure, since the shielding structure can block the path between the cavity and the deposition material, when the deposition material is sputtered to the to-be-sputtered area of ​​the wafer through the target material, the sputtering of the deposition material into the cavity can be reduced or avoided, thereby improving the cleanliness of the cavity.

[0027] In order to make the above-mentioned objects, features and advantages of the present disclosure more obvious and understandable, the present invention is described below with reference to the accompanying drawings.

[0028] See also Figure 1 The cross-sectional schematic diagram of a vapor deposition device in an embodiment of the present disclosure is shown in FIG. Figure 1 As shown, the vapor deposition equipment may include:

[0029] Having an opening ( Figure 1 The cavity 11 (not shown) has a target 12 fixed to its opening, and the target 12 sputters and deposits the material;

[0030] A stage 13 disposed in the cavity 11 and below the opening, and carrying the wafer W;

[0031] The shielding structure 14 is disposed in the cavity 11 and located between the inner wall of the cavity 11 and the target material 12 to block the path between the cavity 11 and the deposition material and expose the area of ​​the wafer W to be sputtered.

[0032] Specifically, when the target material 12 sputters the deposited material, the shielding structure 14 is located in the path between the cavity 11 and the deposited material, and the sputtered material will only be deposited in the interval formed by the to-be-sputtered area of ​​the wafer W and the shielding structure 14, thereby reducing or avoiding the sputtering of the deposited material into the cavity 11, thereby improving the cleanliness of the cavity 11.

[0033] It should be noted that Figure 1 The structures and dimensions of the cavity 11, target material 12, carrier 13 and shielding structure 14 shown are merely illustrative and are used to indicate that the path between the cavity 11 and the deposition material can be blocked by flexibly setting the position of the shielding structure 14 in the cavity 11, and should not be construed as a limitation of the present disclosure.

[0034] In some embodiments of the present disclosure, the shielding structure 14 is detachably disposed between the inner wall of the chamber 11 and the target material 12, so as to facilitate periodic replacement of the shielding structure 14, so that the vapor deposition equipment can be used for a long time and continuously to improve manufacturing efficiency.

[0035] For example, the shielding structure 14 may be replaced periodically according to the working time KWH of the vapor deposition equipment for depositing materials.

[0036] In a specific embodiment, when the working time KWH of the vapor deposition equipment for depositing materials reaches 900, a new shielding structure 14 is replaced, that is, 900 KWH is a replacement cycle.

[0037] In some embodiments of the present disclosure, see Figure 1 A trapezoidal groove T is provided on the inner wall of the cavity 11, and the trapezoidal groove T includes a first groove T1 and a second groove T2.

[0038] The first groove T1 is used to support and fix the target material 12 , and the second groove T2 is used to support and fix the shielding structure 14 .

[0039] In some embodiments of the present disclosure, the outer diameter of the first groove T1 is greater than the outer diameter of the second groove T2, so that when the shielding structure 14 is placed in the trapezoidal groove T, it is convenient to fix the shielding structure 14.

[0040] In some examples, when the shielding structure 14 is placed in the trapezoidal groove T, the trapezoidal groove T and the shielding structure 14 can be fixed by threaded connection.

[0041] In some embodiments of the present disclosure, when a trapezoidal groove T is provided on the inner wall of the cavity 11, the target material 12 is located above the bottom of the first groove T1, and the shielding structure 14 is located between the second groove T2 and the target material 12, thereby fixing the target material 12 and the shielding structure 14 on the inner wall of the cavity 11.

[0042] The target material 12 refers to the material that is sputtered to the sputtering area of ​​the wafer W during the sputtering process and is used to produce thin films, coatings or other materials.

[0043] In some embodiments of the present disclosure, the target material 12 may be a metal target material. In some other examples, the target material 12 may be at least one of an oxide target material (e.g., titanium oxide, zinc oxide, aluminum oxide, etc.), a nitride target material (e.g., titanium nitride, tungsten nitride, etc.), a carbide target material (e.g., titanium carbide, silicon carbide, etc.), and a silicide target material (e.g., titanium silicide, tungsten silicide, etc.).

[0044] The carrier 13 can be used to carry the wafer W, and during the sputtering deposition process, the carrier 13 can drive the wafer W to move (eg, move in a selective manner and move up and down, etc.) to reduce the distance between the wafer W and the target material 12 .

[0045] Depending on the structure and type, the carrier 13 may also have functions such as heating, cooling, rotating, clamping, and adsorption, so a suitable carrier 13 may be selected according to different needs.

[0046] In an optional example, the carrier 13 may be an electrostatic chuck.

[0047] The shielding structure 14 is used to block the path between the deposition material and the cavity 11 , so that the deposition material cannot be deposited into the cavity 11 , thereby improving the cleanliness of the cavity 11 .

[0048] In some embodiments of the present disclosure, the shielding structure 14 may include a first shielding member 141 and a second shielding member 142, wherein the shielding structure 14 is located between the second groove T2 and the target material 12, and is distributed along the circumference of the carrier 13; the second shielding member 142 is buckled on the first shielding member 141, and exposes the area of ​​the wafer W to be sputtered.

[0049] That is, when the sputtering deposition material is performed, a deposition film layer can be formed on the wafer W while blocking the path between the cavity 11 and the deposition material.

[0050] In some embodiments of the present disclosure, Figure 1 , see Figure 2 The schematic diagram of the structure of a first shielding member in the embodiment of the present disclosure is shown in FIG. Figure 1 and Figure 2As shown, the first shielding member 141 may include a bottom wall G3, a first side wall G1 and a second side wall G2. The first side wall G1 and the second side wall G2 are arranged opposite to each other and connected through the bottom wall G3.

[0051] In short, the cross section of one side of the first shielding member 141 is a U-shaped structure, so that when sputtering deposited materials, the deposited materials can be collected in the space provided by the U-shaped structure and will not be sputtered into the cavity 11.

[0052] In some embodiments, a protrusion G4 is disposed on the first side wall G1 , and the protrusion G4 is clamped between the second trench T2 and the target material 12 .

[0053] Specifically, by providing a protrusion G4 on the first side wall G1 , the protrusion G4 can cooperate with the second groove T2 to fix the first shielding member 141 on the second groove T2 .

[0054] As an example, both the protrusion G4 and the second groove T2 have threaded holes, and the threaded holes on the protrusion G4 and the threaded holes on the second groove T2 are arranged relative to each other, so that when the threaded holes of the two are aligned, the first shielding member 141 and the second groove T2 can be connected by screws.

[0055] In some other examples, other known connection mechanisms may be used to achieve the connection between the first shielding member 141 and the second trench T2 .

[0056] In some embodiments of the present disclosure, along the direction perpendicular to the surface of the carrier 13, the top height of the first side wall G1 is higher than the top height of the second side wall G2, which helps to reduce the difficulty of snapping the second shielding member 142 into the first shielding member 141; and by making the first shielding member 141 have a shape with one side high and the other side low, it is convenient to sputter the deposited material into the space formed by the first shielding member 141, and the space occupied by the first shielding member 141 can be reduced.

[0057] In this case, the top height of the second side wall G2 is higher than the top height of the carrier 13. That is, there is a gap between the second side wall G2 and the carrier 13, and the gap allows the wafer W to freely enter and exit.

[0058] In some other embodiments, the top height of the first side wall G1 and the top height of the second side wall G2 may be the same. The embodiment of the present disclosure does not impose any specific limitation on this, as long as the first shielding member 141 can play a blocking role.

[0059] It should be noted that, first, Figure 1 and Figure 2 The structure of the first shielding member 141 is only an example. Figure 1 and Figure 2In the embodiment, the first side wall G1 is wide in the middle and narrow at both ends, and the contact portion between the middle area and the top area is arc-shaped; in other examples, the shape of the first side wall G1 can be a regular shape; second, Figure 2 Only a partial structure of the first shielding member 141 is illustrated, and the entire structure of the first shielding member 141 is not shown.

[0060] In some embodiments of the present disclosure, see Figure 1 When the target material 12 is fixed at the opening, a groove C is provided on the target material 12, and the top of the first side wall G1 is clamped in the groove C, which can prevent the sputtered deposition material located on the inner side of the target material 12 (i.e., the side close to the shielding structure 14) from sputtering to other places, for example, the deposition material is sputtered onto the sealing ring on the outer side of the top of the first side wall G1 (not shown), thereby affecting the sealing of the chamber 11.

[0061] In some examples, the inner diameter of the groove C matches the outer diameter of the first sidewall G1 , for example, the inner diameter of the groove C is the same as the outer diameter of the first sidewall G1 , or for example, the inner diameter of the groove C is greater than the outer diameter of the first sidewall G1 .

[0062] In some embodiments of the present disclosure, Figure 1 and Figure 2 , see Figure 3 The schematic diagram of the structure of a second shielding member in the embodiment of the present disclosure is shown in FIG. Figures 1 to 3 As shown, the second shielding member 142 includes a first part P1 and a second part P2 fixedly connected, wherein the first part P1 is located above the bottom wall G3 between the first side wall G1 and the second side wall G2, the second part P2 is located on the second side wall G2, and the projection of the second part P2 is at least partially located on the carrier 13.

[0063] By making the first part P1 and the second part P2 straddle both sides of the second side wall G2, and the projection of the second part P2 is at least partially located on the carrier 13, sputtering of the material inside the cavity 11 can be avoided, and the edge position of the carrier 13 can be protected to prevent excess material from being plated around the edge of the carrier 13.

[0064] In some embodiments of the present disclosure, the second part P2 has a protrusion P3 facing the first part P1 on the side facing the carrier 13. The protrusion P3 is adapted to the shape of the carrier 13, can play a role in guiding the angle and limiting the position, and can both facilitate docking with the carrier 13 and prevent the second shielding member 142 from being excessively displaced and unable to play a shielding role.

[0065] For example, the second shielding member 142 is excessively offset, resulting in the second shielding member 142 being offset from the first shielding member 141 , so that the first shielding member 141 cannot shield the edge of the carrier 13 , and the deposition material is sputtered onto the carrier 13 .

[0066] In some embodiments, the protrusion P3 is located between the second side wall G2 and the stage 13 .

[0067] In some embodiments of the present disclosure, the second portion P2 is further provided with a pad P4, and the second shielding member 142 contacts the carrier 13 through the pad P4. By providing the pad P4, on the one hand, the impact between the second shielding member 142 and the carrier 13 can be buffered, thereby reducing the wear and damage to the carrier 13; on the other hand, the pad P4 can play an isolating role, preventing the deposition material from being sputtered from the contact position between the second shielding member 142 and the carrier 13 into the cavity 11, further improving the cleanliness of the cavity.

[0068] It should be noted that Figure 3 Only a partial structure of the second shielding member 142 is illustrated, and the entire structure of the second shielding member 142 is not shown.

[0069] In actual application, the inventors further discovered that when the shielding structure 14 is placed in the cavity 11, the concentricity between the shielding structure 14 and the stage 13 is poor, while the wafer W is placed concentrically with the stage, so the concentricity between the shielding structure 14 and the wafer W is poor, and the lateral spacing between different regions of the shielding structure 14 and the wafer W is different. In the region where the lateral spacing between the shielding structure 14 and the wafer W is large, there is still a risk of the deposited material sputtering into the cavity 11.

[0070] Based on this, the vapor deposition equipment also includes a calibration component for calibrating the coaxiality between the shielding structure and the carrier to determine the target position of the shielding structure.

[0071] In some embodiments of the present disclosure, the target position of the shielding structure is: the position of the shielding structure when the shielding structure is concentrically aligned with the carrier.

[0072] That is, through the calibration part, the shielding structure can be concentrically aligned with the carrier, and the circumferential direction of the wafer is consistent with the lateral spacing of the shielding structure, so that the edge of the carrier can be completely shielded to prevent the deposition material from accumulating on the edge of the carrier.

[0073] For some examples, see Figure 4 As shown in a schematic diagram of the structure of a calibration piece in an embodiment of the present disclosure, the calibration piece 15 may have a first end 151 and a second end 152, and the radial size of the first end 151 and the radial size of the second end 152 are different, so that the calibration piece 150 can be used to calibrate different vapor deposition devices, or the first shielding member and the second shielding member in the same vapor deposition device can be calibrated at the same time.

[0074] It can be understood that, first, in some other examples, the radial dimension of the first end 151 and the radial dimension of the second end 152 can be the same; second, Figure 4The radial dimensions of the first end 151 and the second end 152 are merely illustrative and are used to indicate that the calibration piece 15 has a first end 151 and a second end 152 of two different sizes, and should not be construed as a limitation to the present disclosure.

[0075] To facilitate understanding of the calibration process in the embodiments of the present disclosure, an exemplary description is given below with reference to the accompanying drawings.

[0076] Combination Figures 1 to 4 , see Figure 5 A schematic diagram of a method for calibrating the concentricity of a shielding structure and a carrier in an embodiment of the present disclosure is shown in FIG. Figure 5 As shown, when the shielding structure 14 is placed in the cavity 11, the first end portions 151 of the plurality of calibration pieces 15 (for example, three calibration pieces 15) are placed in the gap between the second side wall G2 of the first shielding piece 141 and the carrier 13. During the calibration process, each calibration piece 15 is in close contact with the carrier 13, and the position of the first shielding piece 141 is adjusted so that the spacing between each calibration piece 15 and the first shielding piece 141 is the same, or the other end of each calibration piece 15 is in close contact with the second side wall G2 of the first shielding piece 141. At this time, it is indicated that the first shielding piece 141 and the carrier 13 are concentrically aligned, and the first shielding piece 141 can be fixed on the inner wall of the cavity 11.

[0077] When the first shielding member 141 is fixed, the second end portions 152 of the plurality of calibration members 15 (for example, three calibration members 15) are placed in the gap between the first portion P1 of the second shielding member 142 and the first side wall G1 of the first shielding member 141. During the calibration process, each calibration member 15 is closely attached to the first side wall G1 of the first shielding member 141. By adjusting the position of the second shielding member 142, the spacing between each calibration member 15 and the second shielding member 142 is made the same, or the other end of each calibration member 15 is closely attached to the second side wall G2 of the second shielding member 142. At this time, the first shielding member 141 and the second shielding member 142 are concentrically aligned, that is, the second shielding member 142 and the carrier 13 are concentrically aligned, so that the second shielding member 142 can be overlapped on the first shielding member 141.

[0078] It should be noted that the vapor deposition equipment provided in the embodiment of the present disclosure may actually include other components, such as a gas supply system, etc. In order to facilitate the description of the technical solution of the present disclosure and highlight the innovative part of this specification, in the embodiment of the present disclosure, the components in the carrier that can be realized by the existing technology are omitted.

[0079] Although the embodiments of the present disclosure are disclosed as above, the present invention is not limited thereto. Any person skilled in the art may make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.

Claims

1. A vapor deposition device, characterized in that: include: A cavity having an opening, wherein a target is fixed to the opening, and the target sputters and deposits a material; A stage disposed in the cavity and below the opening for carrying a wafer; The shielding structure is arranged in the cavity, between the inner wall of the cavity and the target material, so as to block the path between the cavity and the deposition material and expose the shielding structure of the wafer in the area to be sputtered.

2. The vapor deposition apparatus according to claim 1, characterized in that: A trapezoidal groove is provided on the inner wall of the cavity, and the trapezoidal groove includes a first groove and a second groove, and the outer diameter of the first groove is larger than the outer diameter of the second groove; wherein the target material is located above the bottom of the first groove, and the shielding structure is located between the second groove and the target material.

3. The vapor deposition apparatus according to claim 2, characterized in that: The shielding structure includes: a first shielding member and a second shielding member, the first shielding member is located between the second groove and the target material and distributed along the circumference of the carrier; the second shielding member is buckled on the first shielding member and exposes the area of ​​the wafer to be sputtered.

4. The vapor deposition apparatus according to claim 3, characterized in that: The first shielding member includes a bottom wall, a first side wall and a second side wall, wherein the first side wall and the second side wall are arranged opposite to each other and connected through the bottom wall; wherein a protrusion is arranged on the first side wall, and the protrusion is clamped between the second groove and the target material.

5. The vapor deposition apparatus according to claim 4, characterized in that: Along a direction perpendicular to the surface of the carrier, a top height of the first side wall is higher than a top height of the second side wall; The top height of the second side wall is higher than the top height of the carrier.

6. The vapor deposition apparatus according to claim 4, characterized in that: A groove is arranged on the target material; the top of the first side wall is clamped in the groove.

7. The vapor deposition apparatus according to claim 4, characterized in that: The second shielding member includes a first part and a second part which are fixedly connected; wherein the first part is located above the bottom wall between the first side wall and the second side wall, the second part is located on the second side wall, and a projection of the second part is at least partially located on the carrier.

8. The vapor deposition apparatus according to claim 7, characterized in that: The second part has a protrusion facing the first part on a side facing the carrier, and the protrusion is adapted to the shape of the carrier.

9. The vapor deposition apparatus according to claim 1, characterized in that: Also includes: A calibration piece is used to calibrate the coaxiality between the shielding structure and the carrier to determine the target position of the shielding structure; wherein the target position of the shielding structure is the position of the shielding structure when the shielding structure is concentrically aligned with the carrier.

10. The vapor deposition apparatus according to claim 9, characterized in that: The calibration piece has a first end and a second end, and a radial dimension of the first end is different from a radial dimension of the second end.

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