Photoresist composition as well as preparation method and application thereof

Abstract

The invention belongs to the technical field of photoresist materials, and particularly relates to a photoresist composition as well as a preparation method and application thereof. The photoresist composition comprises a polymer, a photosensitizer, a first organic solvent and an optional auxiliary agent, the polymer is obtained by condensation polymerization of a first polymerization component and a second polymerization component, the first polymerization component and the second polymerization component have a structure shown in a formula (1), and the second polymerization component is an aldehyde compound. The key point of the invention lies in that the specific polymer is introduced and compounded with the photosensitizer and the organic solvent to obtain the photoresist composition, and the photoresist composition not only has good thermal stability and optical performance, but also has higher dissolution rate and better dissolution effect in a developing solution, reduces the residue of the photoresist after development, and improves the yield of the photoresist. Therefore, the resolution of the photoetching pattern is improved. # imgabs0 #

Description

Technical Field

[0001] The invention belongs to the technical field of photoresist materials, and in particular relates to a photoresist composition and a preparation method and application thereof. Background Art

[0002] Photoresist is the core consumable material for integrated circuit manufacturing and is also a key factor affecting the performance, yield and reliability of integrated circuits. According to the chemical reaction mechanism and development principle of photoresist, photoresist can be divided into positive photoresist and negative photoresist. The exposed area of ​​positive photoresist will undergo photolysis reaction, causing the photoresist to degrade into substances that can be dissolved in the developer. The exposed area of ​​negative photoresist will undergo cross-linking reaction, making the photoresist insoluble in the developer, while the photoresist in the non-exposed area can be dissolved in the developer.

[0003] G / I line photoresist uses linear phenolic resin as the main resin and diazonaphthoquinone as the photosensitizer. The pattern of the mask is transferred and copied to the wafer through photolithography processes such as exposure and development. The existing linear phenolic resin has low solubility in the developer and is difficult to control. The thermal stability of linear phenolic resin is also poor. These problems will affect the resolution of the resulting photolithography pattern. Summary of the invention

[0004] The first purpose of the present invention is to provide a photoresist composition that has good thermal stability, fast dissolution rate in developer and high resolution of the obtained photolithography pattern, in order to address the problem that the existing photoresist composition has poor thermal stability and slow dissolution rate in developer, thereby reducing the resolution.

[0005] Specifically, the photoresist composition comprises: a polymer, a photosensitizer, a first organic solvent and an optional auxiliary agent; the polymer is obtained by polycondensing a first polymer component having a structure as shown in formula (1) and a second polymer component, wherein the second polymer component is an aldehyde compound;

[0006]

[0007] In formula (1), R1, R2, R3, and R4 are each independently hydrogen, hydroxyl, or methyl, and at least one of R1 to R4 is hydroxyl, and x is an integer of 1 to 3.

[0008] In a preferred embodiment, the content of the polymer is 90 to 100 parts by weight, the content of the photosensitizer is 10 to 30 parts by weight, the content of the first organic solvent is 400 to 500 parts by weight, and the content of the auxiliary agent is 0 to 10 parts by weight.

[0009] In a preferred embodiment, the weight average molecular weight of the polymer is 2000-10000 Daltons, and the PDI is 2.0-2.6.

[0010] In a preferred embodiment, the molar ratio of the first polymer component to the second polymer component is 1:(0.7-1.0).

[0011] In a preferred embodiment, the conditions of the polycondensation reaction include: temperature of 70-100° C. and time of 1-5 h.

[0012] In a preferred embodiment, the first polymer component is selected from at least one of 4',7-dihydroxyflavone, 5,6,7-trihydroxy-2-(4-hydroxyphenyl)-4H-benzopyran-4-one, apigenin, 7,8,3',4'-tetrahydroxyflavone, and 5,7,4'-trihydroxy-8-methylflavone.

[0013] In a preferred embodiment, the second polymer component is selected from at least one of formaldehyde, acetaldehyde, propionaldehyde and paraformaldehyde.

[0014] In a preferred embodiment, the polycondensation reaction is carried out in the presence of a catalyst.

[0015] In a preferred embodiment, the catalyst is an acidic catalyst.

[0016] In a preferred embodiment, the acidic catalyst is selected from at least one of oxalic acid, Lewis acid, hydrochloric acid and sulfuric acid.

[0017] In a preferred embodiment, the polycondensation reaction is carried out in the presence of a second organic solvent.

[0018] In a preferred embodiment, the second organic solvent is selected from at least one of propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, and methyl isobutyl ketone.

[0019] In a preferred embodiment, the polymerization reaction further comprises the following steps: mixing the product after the polymerization reaction with an alkaline compound, filtering, washing and drying to obtain a polymer.

[0020] In a preferred embodiment, the alkaline compound is selected from at least one of ammonium hydroxide, tetramethylammonium hydroxide and 2-amino-2methyl-1-propanol.

[0021] In a preferred embodiment, the photosensitizer is naphthoquinone diazonium sulfonate; the first organic solvent is selected from at least one of anisole, propylene glycol methyl ether acetate, propylene glycol monomethyl ether, methyl isobutyl ketone, cyclopentanone, cyclohexanone, methyl ethyl ketone, diheptanone, ethyl lactate, ethyl acetate, butyl acetate, neopentyl acetate, xylene, and toluene; the auxiliary agent is selected from at least one of butyl lactate, 4,4-(1-isopropylidene)bis(2,6-dimethylphenol), 2,2',4,4'-tetrahydroxybenzophenone, 2,3,4,4'-tetrahydroxybenzophenone, 2',4'-dihydroxypropiophenone, 2,4'-dihydroxydiphenylmethane, dibutyl phthalate, 9-anthracene methanol, and 1,8-bis(hydroxymethyl)anthracene.

[0022] The second object of the present invention is to provide a method for preparing the above-mentioned photoresist composition, which comprises: mixing a polymer, a photosensitizer, a first organic solvent and an optional auxiliary agent in the dark to obtain the photoresist composition.

[0023] The third object of the present invention is to provide an application of the above-mentioned photoresist composition in the field of photoresist material technology.

[0024] The key to the present invention is to introduce a specific polymer and compound it with a photosensitizer and an organic solvent to obtain a photoresist composition. The photoresist composition not only has good thermal stability, but also has excellent optical properties under exposure to g-line (436nm) and i-line (365nm). At the same time, the solubility of the photoresist composition in a developer is significantly improved, so that the dissolution rate in the developer is faster and the dissolution effect is better, and the residual photoresist after development is reduced, which is beneficial to improving the resolution of the photolithography pattern. DETAILED DESCRIPTION

[0025] The photoresist composition provided by the present invention comprises: a polymer, a photosensitizer, a first organic solvent and an optional auxiliary agent; the polymer is obtained by polycondensing a first polymer component having a structure as shown in formula (1) and a second polymer component, wherein the second polymer component is an aldehyde compound.

[0026]

[0027] In formula (1), R1, R2, R3, and R4 are each independently hydrogen, hydroxyl, or methyl, and at least one of R1 to R4 is hydroxyl, and x is an integer of 1 to 3, such as 1, 2, or 3.

[0028] In the present invention, the content of the polymer is preferably 90 to 100 parts by weight, such as 90, 92, 95, 98, 100 parts by weight or any value therebetween; the content of the photosensitizer is preferably 10 to 30 parts by weight, such as 10, 15, 20, 25, 30 parts by weight or any value therebetween; the content of the first organic solvent is preferably 400 to 500 parts by weight, such as 400, 420, 450, 480, 500 parts by weight or any value therebetween; the content of the auxiliary agent is preferably 0 to 10 parts by weight, such as 0, 1, 2, 3, 5, 8, 10 parts by weight or any value therebetween.

[0029] In the present invention, the weight average molecular weight Mw of the polymer is preferably 2000-10000 Daltons, such as 2000 Daltons, 3000 Daltons, 3500 Daltons, 4000 Daltons, 5000 Daltons, 6000 Daltons, 8000 Daltons, 10000 Daltons or any value therebetween; the PDI is preferably 2.0-2.6, such as 2.0, 2.1, 2.2, 2.3, 2.4, 2.5, 2.6 or any value therebetween.

[0030] In the present invention, the molar ratio of the first polymer component to the second polymer component is preferably 1:(0.7-1.0), such as 1:0.7, 1:0.8, 1:0.9, 1:1.0 or any value therebetween.

[0031] In the present invention, the conditions for the condensation polymerization reaction may include: the temperature is preferably 70-100°C, such as 70°C, 75°C, 80°C, 85°C, 90°C, 95°C, 100°C or any value therebetween; the time is preferably 1-5h, such as 1h, 2h, 3h, 4h, 5h or any value therebetween.

[0032] In the present invention, the first polymer component can be any compound having a structure as shown in formula (1), and specific examples thereof include but are not limited to at least one of 4',7-dihydroxyflavone, 5,6,7-trihydroxy-2-(4-hydroxyphenyl)-4H-benzopyran-4-one, apigenin, 7,8,3',4'-tetrahydroxydihydroflavone, and 5,7,4'-trihydroxy-8-methyldihydroflavone.

[0033] In the present invention, specific examples of the aldehyde compound include, but are not limited to, at least one of formaldehyde, acetaldehyde, propionaldehyde, and paraformaldehyde.

[0034] In the present invention, the polycondensation reaction is preferably carried out in the presence of a catalyst. The catalyst can be any of a variety of existing compounds that can catalyze the polycondensation reaction between the first polymer component and the second polymer component, preferably an acidic catalyst. Specific examples of the acidic catalyst include, but are not limited to, at least one of oxalic acid, Lewis acid, hydrochloric acid, and sulfuric acid.

[0035] In the present invention, the polycondensation reaction is preferably carried out in the presence of a second organic solvent. Specific examples of the second organic solvent include, but are not limited to, at least one of propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, and methyl isobutyl ketone.

[0036] In the present invention, the polymerization reaction may further include the following steps: mixing the product after the polymerization reaction with an alkaline compound, filtering, washing, and drying to obtain a polymer. Specific examples of the alkaline compound include, but are not limited to, at least one of ammonium hydroxide, tetramethylammonium hydroxide, and 2-amino-2methyl-1-propanol.

[0037] In the present invention, the photosensitizer is preferably a diazonaphthoquinone sulfonate, and specific examples thereof include but are not limited to at least one of 2,3,4-trihydroxybenzophenone-2,1,5-diazonaphthoquinone sulfonate, 2,3,4,4"-tetrahydroxybenzophenone-2,1,4-diazonaphthoquinone sulfonate, and 2,3,4-trihydroxybenzophenone-2,1,4-diazonaphthoquinone sulfonate.

[0038] In the present invention, the first organic solvent can be an organic solvent commonly used in photoresist compositions in the prior art, and specific examples thereof include but are not limited to: at least one of anisole, propylene glycol methyl ether acetate, propylene glycol monomethyl ether, methyl isobutyl ketone, cyclopentanone, cyclohexanone, methyl ethyl ketone, diheptanone, ethyl lactate, ethyl acetate, butyl acetate, neopentyl acetate, xylene, and toluene.

[0039] In the present invention, specific examples of the auxiliary agent include, but are not limited to, at least one of butyl lactate, 4,4-(1-isopropylidene)bis(2,6-dimethylphenol), 2,2',4,4'-tetrahydroxybenzophenone, 2,3,4,4'-tetrahydroxybenzophenone, 2',4'-dihydroxypropiophenone, 2,4'-dihydroxydiphenylmethane, dibutyl phthalate, 9-anthracene methanol, and 1,8-bis(hydroxymethyl)anthracene.

[0040] The preparation method of the photoresist composition provided by the present invention comprises: mixing a polymer, a photosensitizer, a first organic solvent and an optional auxiliary agent in the dark to obtain the photoresist composition.

[0041] In a specific embodiment, the preparation method may include the following steps: mixing the polymer, the photosensitizer, the first organic solvent and the optional auxiliary agent in any order in the dark for 24 to 96 hours, such as 24 hours, 30 hours, 36 hours, 42 hours, 50 hours, 60 hours, 70 hours, 80 hours, 90 hours, 96 hours or any value therebetween, so that each component is fully dissolved to obtain a mixed solution, filtering the mixed solution through a filter with a diameter of ≦0.5 μm, and the obtained filtrate is the photoresist composition, which needs to be stored in the dark.

[0042] In addition, the terms "first" and "second" are only used for the purpose of convenience of description and should not be understood as special limitations on the type and quantity of technical features.

[0043] The present invention will be described in detail below through specific embodiments.

[0044] Synthesis Example 1 Preparation of Polymer A

[0045] 25.42 g (0.1 mol) of 4',7-dihydroxyflavone and 65.61 g of propylene glycol monomethyl ether acetate were added into a four-necked beaker, heated and stirred to 90°C, 0.28 g of oxalic acid was added, and then 2.70 g (0.09 mol) of formaldehyde was added dropwise. After the addition was completed, the mixture was reacted at 90°C for 3 h. After the reaction was completed, the reaction system was adjusted to pH = 7 with tetramethylammonium hydroxide, filtered, the filter cake was washed with distilled water, and dried to obtain polymer A for photoresist, with Mw of 5230 Daltons and PDI of 2.53.

[0046] The chemical structures of 4',7-dihydroxyflavone and polymer A are shown below:

[0047]

[0048] Synthesis Example 2 Preparation of Polymer B

[0049] 34.35 g (0.12 mol) of 5,6,7-trihydroxy-2-(4-hydroxyphenyl)-4H-benzopyran-4-one (CAS: 529-53-3) and 86.8 g of propylene glycol monomethyl ether acetate were added to a four-necked beaker, heated and stirred to 90°C, 0.37 g of oxalic acid was added, and then 2.85 g (0.095 mol) of formaldehyde was added dropwise. After the addition was completed, the mixture was reacted at 90°C for 3 hours. After the reaction was completed, the reaction system was adjusted to pH = 7 with tetramethylammonium hydroxide, filtered, the filter cake was washed with distilled water, and dried to obtain a photoresist polymer B with a Mw of 5807 Daltons and a PDI of 2.21.

[0050] The chemical structures of 5,6,7-trihydroxy-2-(4-hydroxyphenyl)-4H-benzopyran-4-one and polymer B are shown below:

[0051]

[0052] Synthesis Example 3 Preparation of Polymer C

[0053] 32.43 g (0.12 mol) of apigenin (4',5,7-trihydroxyflavone) (Mw = 270.24) and 81.97 g of propylene glycol monomethyl ether acetate were added to a four-necked beaker, heated and stirred to 90°C, 0.35 g of oxalic acid was added, and then 2.7 g (0.09 mol) of formaldehyde was added dropwise. After the addition was completed, the mixture was reacted at 90°C for 3 hours. After the reaction was completed, the reaction system was adjusted to pH = 7 with tetramethylammonium hydroxide, filtered, the filter cake was washed with distilled water, and dried to obtain a photoresist polymer C with a Mw of 5086 Daltons and a PDI of 2.34.

[0054] Among them, the chemical structures of apigenin and polymer C are shown below:

[0055]

[0056] Synthesis Example 4 Preparation of Polymer D

[0057] 37.21 g (0.13 mol) of 7,8,3',4'-tetrahydroxyflavone (Mw = 286.24) and 94.29 g of propylene glycol monomethyl ether acetate were added to a four-necked beaker, heated and stirred to 90°C, 0.40 g of oxalic acid was added, and then 2.94 g (0.098 mol) of formaldehyde was added dropwise. After the addition was completed, the mixture was reacted at 90°C for 3 hours. After the reaction was completed, the reaction system was adjusted to pH = 7 with tetramethylammonium hydroxide, filtered, the filter cake was washed with distilled water, and dried to obtain a photoresist polymer D with a Mw of 4877 Daltons and a PDI of 2.58.

[0058] The chemical structures of 7,8,3',4'-tetrahydroxyflavone and polymer D are shown below:

[0059]

[0060] Synthesis Example 5 Preparation of Polymer E

[0061] 28.43 g (0.1 mol) of 5,7,4'-trihydroxy-8-methyldihydroflavone (Mw = 284.27) and 94.29 g of propylene glycol monomethyl ether acetate were added to a four-necked beaker, heated and stirred to 90°C, 0.40 g of oxalic acid was added, and then 2.85 g (0.095 mol) of formaldehyde was added dropwise. After the addition was completed, the reaction was carried out at 90°C for 3 hours. After the reaction was completed, the reaction system was adjusted to pH = 7 with tetramethylammonium hydroxide, filtered, the filter cake was washed with distilled water, and dried to obtain polymer E for photoresist, with Mw of 3275 Daltons and PDI of 2.14.

[0062] The chemical structures of 5,7,4'-trihydroxy-8-methylflavone and polymer E are shown below:

[0063]

[0064] Comparative Synthesis Example 1 Preparation of Polymer F

[0065] 37.47 g (0.13 mol) of 2-(4-hydroxyphenyl)-4H-benzopyran-4-one and 93.87 g of propylene glycol monomethyl ether acetate were added into a four-necked beaker, heated and stirred to 90°C, 0.4 g of oxalic acid was added, and then 2.76 g (0.092 mol) of formaldehyde was added dropwise. After the addition was completed, the reaction was carried out at 90°C for 3 hours. After the reaction was completed, the reaction system was adjusted to pH = 7 with tetramethylammonium hydroxide, filtered, the filter cake was washed with distilled water, and dried to obtain a photoresist polymer F with a Mw of 4877 Daltons and a PDI of 2.58.

[0066] The chemical structures of 2-(4-hydroxyphenyl)-4H-benzopyran-4-one and polymer F are shown below:

[0067]

[0068] Comparative Synthesis Example 2 Preparation of Polymer G

[0069] In a 1L flask equipped with a stirrer and a thermometer, add 240g of m-cresol, 160g of p-cresol, and 3g of oxalic acid, replace with nitrogen for 10 minutes, heat to 80°C, slowly drop 133g of 50% formaldehyde solution, stir and reflux for 4 hours. After the reaction is completed, heat to 120°C and distill to remove moisture. When no liquid is evaporated at 120°C, heat to 200°C and distill under reduced pressure for 60 minutes (vacuum degree 95KPa) to remove organic solvents and unreacted components to obtain polymer G with Mw of 3890 Daltons and PDI of 2.58.

[0070] Example 1

[0071] Weigh 100 g of polymer A, 20 g of 2,3,4-trihydroxybenzophenone-2,1,5-diazonaphthoquinone sulfonate, 5 g of butyl lactate, 250 g of propylene glycol methyl ether acetate, and 250 g of propylene glycol methyl ether, put them into a light-proof glass container, shake them in a light-proof glass container for 48 hours to fully dissolve them, and then filter them with a 0.5 μm filter to obtain a photoresist composition.

[0072] Example 2

[0073] A photoresist composition was prepared according to the method of Example 1, except that the same mass of polymer B was used instead of polymer A. The other conditions were the same as those of Example 1, thereby preparing a photoresist composition.

[0074] Example 3

[0075] A photoresist composition was prepared according to the method of Example 1, except that the same mass of polymer C was used instead of polymer A, and the other conditions were the same as those of Example 1, thereby preparing a photoresist composition.

[0076] Example 4

[0077] A photoresist composition was prepared according to the method of Example 1, except that the same mass of polymer D was used instead of polymer A. The other conditions were the same as those of Example 1, thereby preparing a photoresist composition.

[0078] Example 5

[0079] Weigh 90 g of polymer E, 30 g of 2,3,4-trihydroxybenzophenone-2,1,4-diazonaphthoquinone sulfonate, 2 g of dibutyl phthalate, 200 g of propylene glycol methyl ether acetate, and 200 g of cyclohexanone, put them into a light-proof glass container, shake them in a light-proof glass container for 48 hours to fully dissolve them, and then filter them with a 0.5 μm filter to obtain a photoresist composition.

[0080] Example 6

[0081] Weigh 95 g of polymer A, 10 g of 2,3,4,4"-tetrahydroxybenzophenone-2,1,4-diazonaphthoquinone sulfonate, 8 g of butyl lactate, 225 g of propylene glycol methyl ether acetate, and 225 g of anisole, put them into a light-proof glass container, shake them in a light-proof glass container for 48 hours to fully dissolve them, and then filter them with a 0.5 μm filter to obtain a photoresist composition.

[0082] Comparative Example 1

[0083] A reference photoresist composition was prepared according to the method of Example 1, except that polymer F of the same mass was used instead of polymer A, and the other conditions were the same as those of Example 1, thereby preparing a reference photoresist composition.

[0084] Comparative Example 2

[0085] A reference photoresist composition was prepared according to the method of Example 1, except that the same mass of polymer G was used instead of polymer A, and the other conditions were the same as those of Example 1, thereby preparing a reference photoresist composition.

[0086] Test Case

[0087] The polymers and photoresist compositions prepared in the above synthesis examples, embodiments and comparative examples were tested for alkali dissolution rate, thermal stability (Tg) and resolution according to the following methods. The results are shown in Table 1.

[0088] (1) Alkali dissolution rate test: The polymer prepared in the above synthesis example was dissolved in propylene glycol methyl ether acetate (PGMEA) to prepare a solution with a solid content of 30%. The solution was applied to a silicon wafer at a coating speed of 1800 r / min on a coating developer, and the film thickness was tested by heating at 100°C for 1 min. The silicon wafer was then developed in a static immersion manner with a 2.38% tetramethylammonium hydroxide (TMAH) solution for 30 s. The developer was then statically rinsed off with ultrapure water, and then dried at 110°C. The film thickness of the silicon wafer was tested again, and the alkali dissolution rate of the photoresist was calculated by the formula [alkali dissolution rate (ADR) = film thickness difference before and after development / development time].

[0089] (2) Thermal stability (Tg) test: The Tg of the polymer was tested using a Perkin Elmer DSC8000 differential scanning calorimeter.

[0090] (3) Resolution test: A wafer coated with silicon dioxide was taken, and the photoresist composition prepared in the above embodiments and comparative examples was spin-coated on the surface to a coating thickness of 1.5 μm. The wafer was heated at 100° C. for 1 min to form a photoresist layer of a certain thickness. The mask was provided with a line width of 0.1 to 3 μm, and the ratio of the line width to the grating spacing was 1:1. The wafer was exposed under a 365 nm light source. A 2.38% tetramethylammonium hydroxide solution was then used as a developer for 60 seconds, and the wafer was rinsed and fixed with deionized water to obtain a corresponding photolithography pattern. The resolution of the micro-photolithography pattern was tested using a scanning electron microscope.

[0091] Table 1

[0092] Group Alkali dissolution rate (nm / s) Tg(℃) Group Resolution(nm) Synthesis example 1 251 130 Example 1 1.0 Synthesis example 2 325 137 Example 2 0.8 Synthesis example 3 285 129 Example 3 0.9 Synthesis example 4 305 123 Example 4 0.9 Synthesis example 5 300 120 Example 5 0.8 Comparative Synthesis Example 1 185 115 Example 6 0.9 Comparative Synthesis Example 2 234 103 Comparative Example 1 1.2 - - - Comparative Example 2 1.4

[0093] From the results in Table 1, it can be seen that the polymers provided in Synthesis Examples 1 to 5 have higher Tg values, better thermal stability, and higher alkali dissolution rates. The polymers are used as the main components of the photoresist compositions provided in Examples 1 to 6 of the present invention, which increases the dissolution rate of the photoresist compositions in the developer, provides better dissolution effects, and improves the resolution of the obtained photolithography patterns.

[0094] Although the embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and are not to be construed as limitations on the present invention. A person skilled in the art may change, modify, replace and modify the above embodiments within the scope of the present invention without departing from the principles and intent of the present invention.

Claims

1. A photoresist composition, characterized in that The photoresist composition comprises: a polymer, a photosensitizer, a first organic solvent and an optional auxiliary agent; the polymer is obtained by polycondensing a first polymer component having a structure as shown in formula (1) and a second polymer component, wherein the second polymer component is an aldehyde compound; In formula (1), R1, R2, R3, and R4 are each independently hydrogen, hydroxyl, or methyl, and at least one of R1 to R4 is hydroxyl, and x is an integer of 1 to 3.

2. The photoresist composition according to claim 1, characterized in that The content of the polymer is 90 to 100 parts by weight, the content of the photosensitizer is 10 to 30 parts by weight, the content of the first organic solvent is 400 to 500 parts by weight, and the content of the auxiliary agent is 0 to 10 parts by weight.

3. The photoresist composition according to claim 1, characterized in that The weight average molecular weight of the polymer is 2000-10000 Daltons, and the PDI is 2.0-2.

6.

4. The photoresist composition according to claim 1, characterized in that The molar ratio of the first polymer component to the second polymer component is 1:(0.7-1.0); Preferably, the conditions of the polycondensation reaction include: temperature of 70 to 100° C., time of 1 to 5 h; Preferably, the first polymeric component is selected from at least one of 4',7-dihydroxyflavone, 5,6,7-trihydroxy-2-(4-hydroxyphenyl)-4H-benzopyran-4-one, apigenin, 7,8,3',4'-tetrahydroxyflavone, and 5,7,4'-trihydroxy-8-methylflavone; Preferably, the second polymer component is selected from at least one of formaldehyde, acetaldehyde, propionaldehyde and paraformaldehyde.

5. The photoresist composition according to claim 1, characterized in that The polycondensation reaction is carried out in the presence of a catalyst; Preferably, the catalyst is an acidic catalyst; Preferably, the acidic catalyst is selected from at least one of oxalic acid, Lewis acid, hydrochloric acid and sulfuric acid.

6. The photoresist composition according to claim 1, characterized in that The polycondensation reaction is carried out in the presence of a second organic solvent; Preferably, the second organic solvent is selected from at least one of propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, and methyl isobutyl ketone.

7. The photoresist composition according to claim 1, characterized in that After the polymerization reaction, the following steps are further included: mixing the product after the polymerization reaction with an alkaline compound, filtering, washing and drying to obtain a polymer; Preferably, the alkaline compound is selected from at least one of ammonium hydroxide, tetramethylammonium hydroxide and 2-amino-2methyl-1-propanol.

8. The photoresist composition according to claim 1, characterized in that The photosensitizer is naphthoquinone diazonium sulfonate; the first organic solvent is selected from at least one of anisole, propylene glycol methyl ether acetate, propylene glycol monomethyl ether, methyl isobutyl ketone, cyclopentanone, cyclohexanone, methyl ethyl ketone, diheptanone, ethyl lactate, ethyl acetate, butyl acetate, neopentyl acetate, xylene, and toluene; the auxiliary agent is selected from at least one of butyl lactate, 4,4-(1-isopropylidene)bis(2,6-dimethylphenol), 2,2',4,4'-tetrahydroxybenzophenone, 2,3,4,4'-tetrahydroxybenzophenone, 2',4'-dihydroxypropiophenone, 2,4'-dihydroxydiphenylmethane, dibutyl phthalate, 9-anthracene methanol, and 1,8-bis(hydroxymethyl)anthracene.

9. The method for preparing the photoresist composition according to any one of claims 1 to 8, characterized in that: The preparation method comprises: mixing a polymer, a photosensitizer, a first organic solvent and an optional auxiliary agent in the dark to obtain the photoresist composition.

10. Use of the photoresist composition according to any one of claims 1 to 8 in the field of photoresist material technology.

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