Kiln waste heat utilization semiconductor thermoelectric power generation device and system

Abstract

The invention relates to the technical field of glass production, in particular to a kiln waste heat utilization semiconductor thermoelectric power generation device and system. The device comprises a connecting ring arranged on the outer side of a circulating water pipe; the cold end conduction sheet is connected to the connecting ring and is used for transmitting the cooling capacity of the circulating water pipe; the hot end conduction sheet is connected to a hot end contact surface of the glass kiln and is used for transferring heat of the glass kiln; and the semiconductor power generation module is connected between the cold-end conduction sheet and the hot-end conduction sheet and is used for generating power by utilizing the temperature difference between the cold-end conduction sheet and the hot-end conduction sheet. The semiconductor power generation module is arranged, power is generated according to the temperature difference between the glass kiln and the circulating water pipe, the effect of semiconductor temperature difference power generation through waste heat recycling in the glass line production process is achieved, redundant heat is effectively utilized, plant temperature rise is prevented, and harm to workers is reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of glass production, and in particular to a semiconductor temperature difference power generation device and system utilizing waste heat from a kiln. Background Art

[0002] In the modern glass production process, the kiln is one of the key equipment, and its function is to melt the raw materials at high temperature to form glass liquid. Since the furnace fire is constantly burning during the production process of the glass production line, the kiln will generate a lot of waste heat during the operation. If this heat is not effectively utilized, it will cause a huge waste of energy and have a negative impact on the surrounding environment. It will also cause the temperature of the factory to rise, increasing the harm of workers working in high temperatures. Summary of the invention

[0003] The purpose of the present invention is to provide a semiconductor temperature difference power generation device utilizing waste heat from a kiln to solve the above technical problems;

[0004] The present invention also aims to provide a semiconductor temperature difference power generation system utilizing waste heat from a kiln to solve the above technical problems;

[0005] The technical problem solved by the present invention can be achieved by adopting the following technical solutions:

[0006] Semiconductor temperature difference power generation device using waste heat from kiln, including:

[0007] A connecting ring is arranged on the outside of the circulating water pipe;

[0008] The cold end conducting plate is connected to the connecting ring and used to transfer the cold of the circulating water pipe; the hot end conducting plate is connected to the hot end contact surface of the outer shell of the kiln heat storage chamber, kiln cross passage and kiln branch passage of the glass kiln and used to transfer the heat of the glass kiln;

[0009] The semiconductor power generation module is connected between the cold end conduction plate and the hot end conduction plate, and is used for generating electricity by utilizing the temperature difference between the cold end conduction plate and the hot end conduction plate.

[0010] Preferably, the connecting ring is an elastic buckle or a clamp.

[0011] Preferably, the upper surface of the cold end conduction plate is connected to the semiconductor power generation module, the lower surface of the cold end conduction plate is connected to the connecting ring, and the lower surface of the cold end conduction plate is an inner concave surface that matches the outer surface shape of the connecting ring.

[0012] Preferably, the semiconductor power generation module generates current by causing internal carrier movement through the temperature difference at both ends, and the temperature difference between the outside of the glass kiln and the outside of the circulating water pipe is at least 60°C.

[0013] Preferably, it also includes a hot end insulation layer, and the hot end insulation layer is wrapped around the outside of the hot end conduction sheet.

[0014] Preferably, the outer side of the circulating water pipe is connected to a cold end insulation layer, and the cold end insulation layer is wrapped around the outer side of the connecting ring and the outer side of the cold end conduction sheet.

[0015] Preferably, the hot end conduction sheet is connected to the outside of the glass furnace via a fixing member and fits with the hot end contact surface.

[0016] Preferably, the hot end conduction plate and the cold end conduction plate are made of at least one of copper, iron and stainless steel.

[0017] The kiln waste heat utilization semiconductor temperature difference power generation system includes a plurality of semiconductor power generation modules connected in series, a plurality of access points are arranged along the circulating water pipe, each access point is provided with a semiconductor power generation module, and the semiconductor power generation modules are connected in series.

[0018] Beneficial effects of the present invention: Due to the adoption of the above technical scheme, the present invention generates electricity according to the temperature difference between the glass kiln and the circulating water pipe by setting a semiconductor power generation module, thereby realizing the effect of semiconductor temperature difference power generation by recycling waste heat during the glass line production process, realizing effective utilization of excess heat, preventing the factory building from heating up, and reducing harm to workers. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 It is a schematic diagram of the structure of a semiconductor temperature difference power generation device utilizing waste heat from a kiln in an embodiment of the present invention;

[0020] Figure 2 This is a schematic diagram of the installation distribution of the device along the kiln shell in an embodiment of the present invention.

[0021] In the attached figure: 1. circulating water pipe; 2. connecting ring; 3. cold end insulation layer; 4. cold end conduction plate; 5. semiconductor power generation module; 6. hot end conduction plate; 7. hot end insulation layer; 8. fixing part; 9. hot end contact surface; 10. boost series conductor; 11. kiln melting part; 12. kiln heat storage chamber; 13. kiln horizontal passage; 14. kiln branch passage; 15. semiconductor temperature difference power generation device utilizing kiln waste heat. DETAILED DESCRIPTION

[0022] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0023] It should be noted that, in the absence of conflict, the embodiments of the present invention and the features in the embodiments may be combined with each other.

[0024] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but they are not intended to limit the present invention.

[0025] The waste heat from the kiln is used to generate electricity using semiconductor temperature difference devices, such as Figure 1 , Figure 2 As shown, including,

[0026] A connecting ring 2 is arranged on the outer side of the circulating water pipe 1;

[0027] The cold end conducting sheet 4 is connected to the connecting ring 2 and is used to collect the cold water temperature of the circulating water pipe 1;

[0028] The hot end conducting sheet 6 is connected to the hot end contact surface 9 on the outer side of the shell of the kiln heat storage chamber 12, the kiln cross passage 13 and the kiln branch passage 14 of the glass kiln, and is used to transfer the hot end temperature of the glass kiln;

[0029] The semiconductor power generation module 5 is connected between the cold end conduction sheet 4 and the hot end conduction sheet 6 and is used to generate electricity by utilizing the temperature difference between the cold end conduction sheet 4 and the hot end conduction sheet 6 .

[0030] Specifically, the present invention proposes a device for semiconductor temperature difference power generation by recycling waste heat during the glass line production process.

[0031] The semiconductor temperature difference power generation device for utilizing kiln waste heat of the present invention mainly comprises three parts: a hot end part, a cold end part and a semiconductor power generation module 5, wherein the main body of the hot end part is a hot end conduction plate 6, which is connected to the hot end contact surface 9 of the kiln and is used to transfer the hot end temperature of the kiln; the main body of the cold end part is a cold end conduction plate 4, which is connected to the connecting ring 2 and is used to transfer the cold end temperature of the circulating water pipe 1; the semiconductor power generation module 5 is connected between the cold end conduction plate 4 and the hot end conduction plate 6, and is used to generate electricity by utilizing the temperature difference between the cold end conduction plate 4 and the hot end conduction plate 6.

[0032] Specifically, after the kiln waste heat utilization semiconductor temperature difference power generation device of the present invention is put into use, due to the good thermal conductivity of the conductor, the internal temperature of the kiln will be transferred to the hot end contact surface 9 through the kiln shell, and then transferred to the hot end surface of the semiconductor power generation module 5 through the hot end conduction sheet 6.

[0033] Similarly, the circulating cooling water will also be transferred to the cold end surface of the semiconductor power generation module 5 through the cold end conductive sheet 4, thereby generating an uninterrupted and stable temperature difference between the two sides of the power generation module. Using the Seebeck effect and the Peltier effect, the temperature difference between the two sides causes the molecules in the conductor to flow, thereby generating a stable potential difference and generating voltage.

[0034] The semiconductor temperature difference power generation device for utilizing the waste heat of the kiln of the present invention can be fixed on the outer side of the shell of the kiln heat storage chamber 12, the horizontal passage 13 and the branch passage 14, and utilizes the heat dissipation of the kiln to generate electricity by waste heat, thereby realizing waste heat recycling. The present invention combines the characteristics of the glass line process, takes materials from the ground, and utilizes the temperature difference between the kiln body and the main line circulating cooling water to generate semiconductor electricity.

[0035] In a preferred embodiment, the connecting ring 2 is an elastic buckle or a clamp.

[0036] In a preferred embodiment, the upper surface of the cold end conduction plate 4 is connected to the semiconductor power generation module 5, and the lower surface of the cold end conduction plate 4 is connected to the connecting ring 2. The lower surface of the cold end conduction plate 4 is an inner concave surface that is adapted to the outer surface shape of the connecting ring 2.

[0037] Specifically, the present invention uses an elastic buckle or a clamp as an intermediate piece for connecting the cold end conducting sheet 4 with the circulating water pipe 1. When the elastic buckle is used, the cold end conducting sheet 4 can be easily and firmly fixed on the outside of the circulating water pipe 1 to ensure that the connection part is tight. No complicated tools are required during the installation process, the operation efficiency is high, and the installation time can be saved.

[0038] More specifically, the clamp has a strong wrapping property, and the inner diameter shape of the elastic buckle or the clamp is adapted to the circulating water pipe 1, which can effectively connect the cold end conduction plate 4 and the circulating water pipe 1 tightly, thereby realizing the effective transfer of the temperature of the circulating water pipe 1.

[0039] Specifically, the connection ring 2 is an elastic buckle or a clamp, which has a certain elasticity. When the temperature difference in the circulating water pipe 1 changes, the elastic buckle or clamp can also adapt to the phenomenon of thermal expansion and contraction of the pipe body, and is not easily affected by temperature changes. This elastic structure can automatically adjust with temperature changes, maintain a close connection with the circulating water pipe 1, reduce the gap, and ensure that the cold end conduction sheet 4 and the circulating water pipe 1 always maintain good thermal conduction contact.

[0040] To be more specific, when the glass furnace is working or the circulating water pipe 1 is running, there is usually a certain amount of thermal expansion and contraction. The use of elastic buckles or clamps in the present invention can effectively reduce the impact of this interference, maintain the stability of the connection, and avoid loosening or damage of the connecting ring 2 caused by thermal expansion and contraction.

[0041] In addition, the elastic clips and clamps are also convenient to disassemble and maintain, especially the elastic clips, which are easier to disassemble and facilitate regular inspection, cleaning or replacement of the cold end conduction plate 4. At the same time, the production and installation costs of the elastic clips and clamps are lower, providing a simple and effective connection method while reducing the cost of the overall device.

[0042] In a preferred embodiment, the semiconductor power generation module 5 generates current by causing internal carrier movement through the temperature difference at both ends, and the temperature difference between the outside of the glass furnace shell and the outside of the circulating water pipe 1 is at least 60°C; the greater the temperature difference, the better the power generation effect.

[0043] Specifically, the semiconductor power generation module 5 is mainly based on the following two effects:

[0044] Seebeck Effect: When there is a temperature difference between two different conductors or semiconductor materials, an electromotive force (voltage) is generated in the material. The Seebeck effect is caused by the migration of carriers (electrons or holes) caused by the temperature difference. The relationship between voltage (V) and temperature difference (ΔT) can be expressed as:

[0045] V=S·ΔT

[0046] Where S represents the Seeberk coefficient of the material, with the unit of microvolt per Kelvin (μV / K).

[0047] Peltier Effect: The Peltier Effect describes the absorption or release of heat when current passes through a thermoelectric interface formed by connecting two different materials. Under a certain current, the temperature difference will also affect the flow of heat.

[0048] According to thermoelectric related research, the greater the temperature difference, the greater the voltage and current generated by the thermoelectric material. When using semiconductor thermoelectric materials, such as Bi2Te3 alloy, when the temperature difference reaches 60°C, the output voltage of a typical semiconductor power generation module 5 can reach 3.5V, and the current is between 3A and 5A.

[0049] Specifically, in combination with the process requirements and energy-saving and heat-insulating requirements: the outer surface temperature of the shell of the heat storage chamber 12 of the small furnace under the platform kiln of the glass melting furnace of the present invention is about 105°C, the outer surface temperature of the shell of the horizontal passage 13 is about 130°C, and the outer surface temperature of the shell of the branch passage 14 is about 130°C.

[0050] The temperature requirements of the main line circulating water pipe 1 of the present invention are: the temperature of the water inlet pipe ≤35℃, the temperature difference of the water inlet and return pipe ≤10℃ (that is, the temperature of the main line circulating return pipe ≤45℃). Therefore, the temperature difference between the two is about 60℃~85℃. According to the experimental data of related papers, if the temperature difference between the two sides can reach 60℃, the power generation voltage can reach 3.5V, and the current value can reach 3A~5A. A simple estimate is made from this: when the temperature difference at different points is about 60℃~85℃, the power generation voltage can reach 3.5V~4.96V. In the actual production process, the greater the temperature difference, the better the power generation effect.

[0051] In the semiconductor power generation module 5 of the present invention, due to the temperature difference between the hot end and the cold end, the Seeberk effect causes the free carriers (such as electrons) in the semiconductor to flow, thereby forming a stable current and voltage output. The Peltier effect refers to the phenomenon that when current passes through the connection between two different materials, it will cause heat absorption or heat release at the contact point. Specifically, when current flows through the contact point formed by two different conductors, the energy level of the electron will jump. This phenomenon is called the Peltier effect. For example, when electrons flow from low-energy P-type materials to high-energy N-type materials, the electrons will jump from low energy levels to high energy levels. At this time, it is manifested as the need for electrons to absorb heat, thereby forming a cold surface at this node. On the contrary, when electrons flow from high-energy N-type materials to low-energy P-type materials, the electrons will jump from high energy levels to low energy levels. At this time, it is manifested as the need for electrons to release heat, thereby forming a hot surface at this node.

[0052] In the semiconductor thermoelectric power generation device for utilizing waste heat from the kiln of the present invention, if the current flows from the hot end to the cold end, the heat will be absorbed from the cold end, thereby further enhancing the temperature difference. The semiconductor material in the semiconductor power generation module 5 of the present invention is bismuth telluride (Bi2Te3), which has good thermoelectric properties and can effectively convert thermal energy into electrical energy.

[0053] The semiconductor power generation module 5 absorbs heat energy from the glass furnace through the hot end conduction plate 6, and absorbs cold energy from the circulating water pipe 1 through the cold end conduction plate 4. The electrons in the semiconductor material gain energy and move to form an electric current. The temperature difference formed by the glass furnace and the circulating water pipe 1 of the present invention enables the power generation module to work continuously and generate a stable current.

[0054] More specifically, the upper surface of the cold end conduction plate 4 is connected to the semiconductor power generation module 5, and the lower surface of the cold end conduction plate 4 is connected to the connecting ring 2. The lower surface of the cold end conduction plate 4 is an inner concave surface that matches the outer surface shape of the connecting ring 2, so that the cold end conduction plate 4 and the connecting ring 2 can also fit tightly, reducing the gap between the cold end conduction plate 4 and the connecting ring 2, and ensuring the stable transmission of cold.

[0055] In a preferred embodiment, a plurality of semiconductor power generation modules 5 are arranged along the circulating water pipe 1, and the semiconductor power generation modules 5 are connected in series.

[0056] Specifically, semiconductor power generation modules 5 are arranged at multiple points along the kiln heat storage chamber 12, the kiln cross passage and the kiln branch passage 14 of the glass kiln where the circulating water pipe 1 is connected, and the semiconductor power generation modules 5 are connected in series using a boost series conductor 10 to achieve a series boost effect.

[0057] Specifically, after the kiln waste heat utilization semiconductor temperature difference power generation device of the present invention is put into use, due to the good thermal conductivity of the conductor, the internal temperature of the kiln will be transferred to the hot end contact surface 9 through the kiln shell, and then transferred to the hot end surface of the semiconductor power generation module 5 through the hot end conduction sheet 6.

[0058] Similarly, the circulating cooling water will also be transferred to the cold end surface of the semiconductor power generation module 5 through the cold end conductive sheet 4, thereby generating an uninterrupted and stable temperature difference between the two sides of the power generation module. Using the Seebeck effect and the Peltier effect, the temperature difference between the two sides causes the molecules in the conductor to flow, thereby generating a stable potential difference and generating voltage.

[0059] If each semiconductor power generation module 5 is regarded as a battery with a voltage of 3.5V to 4.96V, semiconductor power generation modules 5 with the same voltage can be connected in series to boost the voltage. The number of semiconductor power generation modules 5 varies according to the tonnage of the production line and the length of the kiln body. The larger the tonnage of the production line and the longer the kiln body, the more points where semiconductor power generation modules 5 can be installed and used, and the better the boosting effect after series connection.

[0060] In a preferred embodiment, the semiconductor power generation modules 5 are arranged at multiple points in the appropriate positions of the furnace heat storage chamber 12, the furnace cross passage 13 and the furnace branch passage 14 of the glass furnace. The semiconductor power generation modules 5 are arranged at these positions, which have a greater temperature difference and are easy to obtain a better power generation effect.

[0061] Specifically, the normal production of the glass production line is a 24-hour continuous working system. That is, during the production process, the temperature inside the kiln is stable, and during the production process, a stable flow of constant temperature cooling water flows in the main line circulating cooling water pipe.

[0062] The outer surface temperature of the shell of the heat storage chamber 12 of the small furnace under the platform kiln of the glass melting furnace of the present invention is about 105°C, the outer surface temperature of the shell of the horizontal passage 13 is about 130°C, and the outer surface temperature of the shell of the branch passage 14 is about 130°C.

[0063] The temperature requirements of the main line circulating water pipe 1 of the present invention are: the inlet pipe temperature ≤35°C, the inlet and return pipe temperature difference ≤10°C (that is, the main line circulating return pipe temperature ≤45°C). Therefore, the temperature difference between the hot and cold ends of the semiconductor power generation module 5 is about 60°C to 85°C. According to the experimental data of related papers, if the temperature difference between the two sides can reach 60°C, the power generation voltage can reach 3.5V, and the current value can reach 3A to 5A. A simple estimate is made from this: when the device is installed at different points, the temperature difference is about 60°C to 85°C, and the power generation voltage can reach 3.5V to 4.96V. In the actual production process, the greater the temperature difference, the better the power generation effect.

[0064] Therefore, when the semiconductor power generation module 5 is arranged on the hot end contact surface 9 on the kiln heat storage chamber 12, the kiln cross passage 13 and the kiln branch passage 14 of the glass kiln, it can ensure that the temperature difference between the hot end contact surface 9 on the glass kiln and the circulating water pipe 1 reaches 60°C, thereby realizing stable power generation. The glass kiln as a whole includes the kiln melting part 11, the kiln heat storage chamber 12, the kiln cross passage 13 and the kiln branch passage 14. Of course, in other embodiments, it can also be arranged in different suitable areas of the glass kiln according to the layout site conditions, as long as the temperature difference requirements at both ends of the semiconductor power generation module 5 can be met.

[0065] In a preferred embodiment, a hot end insulation layer 7 is further included, and the hot end insulation layer 7 is wrapped around the outer side of the hot end conduction sheet 6 .

[0066] Specifically, a hot end insulation layer 7 is provided on the outer side of the hot end conduction sheet 6 of the present invention to ensure the temperature difference between the hot end and the cold end of the semiconductor power generation module 5, thereby ensuring the power generation effect. At the same time, the hot end insulation layer 7 can reduce the heat dissipation of the glass kiln to the outside, thereby playing a role in protecting the kiln and saving energy.

[0067] In a preferred embodiment, the outer side of the circulating water pipe 1 is connected to the cold end insulation layer 3 , and the cold end insulation layer 3 is wrapped around the outer side of the connecting ring 2 and the outer side of the cold end conduction sheet 4 .

[0068] Specifically, the present invention arranges a cold end insulation layer 3 on the outside of the circulating water pipe 1 to ensure the temperature difference between the cold end and the hot end of the semiconductor power generation module 5, thereby ensuring the power generation effect.

[0069] In a preferred embodiment, the hot end conducting sheet 6 is connected to the outside of the glass furnace through a fixing member 8 and fits with the hot end contact surface 9 .

[0070] Specifically, the fixing member 8 is connected to both ends of the hot end conduction plate 6, and the hot end conduction plate 6 is connected to the hot end contact surface 9 on the glass kiln through the fixing member 8. The fixing member 8 is made of high temperature resistant material, such as stainless steel, aluminum alloy or heat-resistant alloy. The fixing member 8 can fix the hot end conduction plate 6 on the outside of the glass kiln in the form of bolts or clamps. Similarly, it is necessary to ensure that the hot end conduction plate 6 is closely connected to the hot end contact surface 9, ensure that the hot end conduction plate 6 is in close contact with the hot end contact surface 9, reduce the contact gap, and improve the power generation efficiency.

[0071] In a preferred embodiment, the hot end contact surface 9, the hot end conducting plate 6 and the cold end conducting plate 4 are made of at least one of copper, iron and stainless steel.

[0072] Specifically, the hot end contact surface 9, the hot end conduction plate 6 and the cold end conduction plate 4 of the present invention are made of copper, iron or stainless steel with excellent thermal conductivity. After the kiln waste heat utilization semiconductor temperature difference power generation device of the present invention is put into use, due to the good thermal conductivity of the conductor, the internal temperature of the kiln will be transferred to the hot end contact surface 9 through the kiln shell, and then transferred to the hot end surface of the semiconductor power generation module 5 through the hot end conduction plate 6.

[0073] Similarly, the circulating cooling water will also be transferred to the cold end surface of the semiconductor power generation module 5 through the cold end conductive sheet 4, thereby generating an uninterrupted and stable temperature difference between the two sides of the power generation module. Using the Seebeck effect and the Peltier effect, the temperature difference between the two sides causes the molecules in the conductor to flow, thereby generating a stable potential difference and generating voltage.

[0074] The semiconductor temperature difference power generation system for utilizing kiln waste heat includes a plurality of semiconductor temperature difference power generation devices 15. A plurality of access points are arranged along the circulating water pipe 1. Each access point is provided with a semiconductor temperature difference power generation device 15 for utilizing kiln waste heat as in any one of the embodiments. The semiconductor power generation modules 5 of each semiconductor temperature difference power generation device 15 are connected in series.

[0075] Specifically, semiconductor power generation modules 5 are arranged at multiple points along the glass furnace heat storage chamber 12, the furnace horizontal passage and the furnace branch passage 14 where the circulating water pipe 1 is connected, and the boost series conductor 10 is used to connect the semiconductor power generation modules 5 in series, so as to achieve the effect of series boost. The above description is only a preferred embodiment of the present invention, and does not limit the implementation mode and protection scope of the present invention. For those skilled in the art, it should be realized that all solutions obtained by equivalent substitution and obvious changes made by using the description and illustrations of the present invention should be included in the protection scope of the present invention.

Claims

1. A semiconductor temperature difference power generation device utilizing waste heat from a kiln, characterized in that: include, A connecting ring (2) is arranged on the outside of the circulating water pipe (1); A cold end conducting sheet (4) connected to the connecting ring (2) and used for transferring the cold energy of the circulating water pipe (1); A hot end conducting sheet (6) is connected to a hot end contact surface (9) on the outer side of a shell of a kiln heat storage chamber (12), a kiln cross passage (13), and a kiln branch passage (14) of the glass kiln, and is used to transfer heat of the glass kiln; The semiconductor power generation module (5) is connected between the cold end conduction plate (4) and the hot end conduction plate (6) and is used to generate electricity by utilizing the temperature difference between the cold end conduction plate (4) and the hot end conduction plate (6).

2. The semiconductor temperature difference power generation device utilizing kiln waste heat according to claim 1 is characterized in that: The connecting ring (2) is an elastic buckle or a clamp.

3. The semiconductor temperature difference power generation device utilizing kiln waste heat according to claim 2 is characterized in that: The upper surface of the cold end conduction plate (4) is connected to the semiconductor power generation module (5), and the lower surface of the cold end conduction plate (4) is connected to the connecting ring (2). The lower surface of the cold end conduction plate (4) is an inner concave surface that is mutually compatible with the outer surface shape of the connecting ring (2).

4. The semiconductor temperature difference power generation device utilizing kiln waste heat according to claim 1 is characterized in that: The semiconductor power generation module (5) generates current by causing internal carrier movement through the temperature difference at both ends, and the temperature difference between the outside of the glass furnace and the outside of the circulating water pipe (1) is at least above 60°C.

5. The semiconductor temperature difference power generation device utilizing kiln waste heat according to claim 1 is characterized in that: It also comprises a hot end heat-insulating layer (7), wherein the hot end heat-insulating layer (7) is wrapped around the outer side of the hot end conduction sheet (6).

6. The semiconductor temperature difference power generation device utilizing kiln waste heat according to claim 1 is characterized in that: The outer side of the circulating water pipe (1) is connected to a cold end insulation layer (3), and the cold end insulation layer (3) is wrapped around the outer side of the connecting ring (2) and the outer side of the cold end conduction sheet (4).

7. The semiconductor temperature difference power generation device utilizing kiln waste heat according to claim 1 is characterized in that: The hot end conducting plate (6) is connected to the outer side of the glass furnace via a fixing member (8) and is in contact with the hot end contact surface (9).

8. The semiconductor temperature difference power generation device utilizing kiln waste heat according to claim 1 is characterized in that: The hot end contact surface (9), the hot end conduction plate (6) and the cold end conduction plate (4) are made of at least one of copper, iron and stainless steel.

9. A semiconductor temperature difference power generation system utilizing waste heat from kiln, characterized in that: It comprises a plurality of semiconductor temperature difference power generation devices (15) as described in any one of claims 1 to 8, a plurality of access points are arranged along the circulating water pipe (1), each access point is provided with a semiconductor temperature difference power generation device (15) utilizing waste heat of the kiln, and each of the semiconductor power generation modules (5) is connected in series.

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