Field reflection plasma dynamic forming device and method

Abstract

The invention discloses a field reflection plasma dynamic forming device and method, and belongs to the technical field of plasma. The device comprises a collision fusion area and two forming areas at the two ends of the collision fusion area, the forming area comprises a vacuum chamber, a main discharge coil, a bias coil and an ionization coil; the main discharge coil is wound on the outer surface of the vacuum chamber; the bias coil is wound on the outer side of the main discharge coil; the ionization coil is perpendicular to the main discharge coil and the bias coil; the bias circuit simultaneously introduces reverse current into the plurality of bias coils, and the bias coils generate a reverse magnetic field in the vacuum chamber; the ionization coil forms a rotating magnetic field to ionize gas in the vacuum chamber to generate plasma; the main discharge branch introduces forward current into the main discharge coil, the main discharge coil generates an axial gradient forward magnetic field, field reverse plasmas are dynamically formed, and collision fusion occurs in the collision fusion area. The working reliability and stability of the power supply are improved, and the repeatability of dynamically formed field reflection plasma is improved.

Description

Technical Field

[0001] The present invention belongs to the field of plasma technology, and more specifically, relates to a field anti-plasma dynamic forming device and method. Background Art

[0002] Field-reversed configuration is an innovative magnetic confinement concept in the field of fusion research, and has attracted much attention for its potential in high-beta operation and compact equipment design. Field-reversed configuration plasmas are known for their dominant poloidal magnetic field and smaller toroidal magnetic field. This compact annular structure makes it easier to transport and translate. This feature is not only conducive to engineering construction and diagnostic layout, but also enables FRC to effectively separate the formation zone, compression zone and other areas within the device, thereby optimizing the design of the experimental device. Based on the field-reversed theta pinch (FRTP) technology, the easy transport and translation characteristics of FRC have been applied to experimental studies of transport and collision fusion, showing broad application prospects in the fields of space propulsion and fusion energy.

[0003] The existing field-inverted θ-pinch dynamic FRC formation device is mainly composed of a vacuum chamber, a θ-pinch coil group and a magnetic mirror coil. The formation process can be summarized into four steps: first, a certain amount of neutral gas is injected into the vacuum chamber, and the θ-pinch coil is discharged at the same time to apply an initial bias magnetic field in the vacuum chamber; when the bias magnetic field reaches the maximum, the θ-pinch coil is discharged again to generate a high-frequency oscillating magnetic field in the vacuum, which will ionize the gas in the vacuum chamber and freeze the bias magnetic field; then the current flowing through the θ-pinch coil is allowed to rise rapidly in a time sequence, so that the plasma in the chamber forms FRC while ejecting to one side, thereby achieving the purpose of dynamic formation. The typical power supply topology of the field-inverted θ-pinch is as follows: Figure 1 As shown, it includes a bias branch, a pre-ionization (PI) branch, a field reversal (Main) branch, and a freewheeling (Crowbar) branch. When the power supply is working, capacitors C1, C2, and C3 are first charged to the set voltage value, and then switches S1, S2, and S3 are turned on in sequence to discharge the θ-pinch coil, and finally switch S4 is turned on to complete the freewheeling. Among them, S1-S4 generally use hydrogen thyristors as switches. The entire power supply works in the pulse discharge mode, and will eventually flow through the θ-pinch coil. Figure 2 The current shown.

[0004] However, the branches of the existing circuit are directly connected in parallel, and there is serious mutual coupling. For example, the pre-ionization and field reversal branches are directly connected in parallel, and the impedance between the branches is very small. During discharge, there will be serious oscillation coupling between the two branches, resulting in voltage and current spikes. This not only places higher requirements on the capacitance of the two branches, the withstand voltage and surge current parameters of the hydrogen thyristor, but also may affect the normal conduction of the hydrogen thyristor of the two branches according to the timing, seriously affecting the reliability of the power supply. On the other hand, since the voltage and current parameters of the power supply in the formation zone are relatively high, pulse high-voltage switches are generally used, and their driving is complex. If a large number of switches are used, it will affect the discharge reliability and repeatability. Therefore, in the design of the power supply in the formation zone, the circuit structure should be simplified as much as possible, and the use of pulse high-voltage switches should be reduced. In the dynamic formation process of plasma, the formation of its final mass is affected by factors such as ionization and reverse field injection, and these processes are closely related to the quality of power supply discharge and the accuracy of timing control.

[0005] Therefore, the branches of the existing plasma generation circuit are directly connected in parallel, resulting in serious mutual coupling, which leads to higher requirements for electronic components, increases the cost of the device, and causes poor quality of plasma generation. Summary of the invention

[0006] In view of the defects of the related art, the purpose of the present invention is to provide a field anti-plasma dynamic formation device and method, aiming to solve the problem that the branches of the existing plasma generating circuit are directly connected in parallel, there is serious mutual coupling, which leads to higher requirements on electronic components, increases the cost of the device, and causes poor plasma generation quality.

[0007] To achieve the above-mentioned object, in a first aspect, the present invention provides a field anti-plasma dynamic forming device, comprising two forming regions and a collision fusion region, wherein the two forming regions are arranged at two ends of the collision fusion region;

[0008] The formation area includes a vacuum chamber, a main discharge coil, a bias coil and an ionization coil;

[0009] The main discharge coil is wound on the outer surface of the vacuum chamber; the bias coil is wound on the outer side of the main discharge coil; the ionization coil is arranged perpendicular to the main discharge coil and the bias coil;

[0010] The ionization coil is used to form a rotating magnetic field to ionize the gas in the vacuum chamber to generate plasma;

[0011] A plurality of the bias coils are connected in series and then connected to a bias circuit, wherein the bias circuit is used to simultaneously pass a reverse current through the plurality of bias coils; the bias coils are used to generate a reverse magnetic field in a vacuum chamber;

[0012] Each main discharge coil is connected to a main discharge branch and a freewheeling branch in parallel; the main discharge branch is used to pass a forward current into the corresponding main discharge coil; the main discharge coil is used to generate an axial gradient forward magnetic field in the vacuum chamber to dynamically form a field inversion plasma; the freewheeling branch is automatically connected when the current of the main discharge coil is maximum, so as to reduce the current of the main discharge coil;

[0013] The anti-configuration plasma undergoes collision and fusion in the collision and fusion zone.

[0014] Optionally, the device further comprises an end chamber, wherein the end chamber is respectively located outside the two forming areas;

[0015] The end chamber is used to increase the space at both ends of the vacuum chamber and reduce the contact between the plasma and the vacuum chamber wall.

[0016] Optionally, each of the ionization coils is composed of two groups of identical coils, and each group of coils differs by 90°.

[0017] Optionally, the main discharge branch is composed of a main discharge capacitor Cmain and a hydrogen thyristor switch Smain in series;

[0018] The freewheeling branch is composed of a DC diode Dcrowbar and a freewheeling resistor Rcrowbar in series.

[0019] Optionally, the turn-on time interval of the hydrogen thyristor switch Smain in the main discharge branch of two adjacent main discharge coils is in the range of 1-3 μs.

[0020] Optionally, the bias circuit is composed of a capacitor Cbias and a hydrogen thyristor switch Sbias connected in series.

[0021] Optionally, one forming zone includes 12 main discharge coils, 6 ionization coils and 12 bias coils.

[0022] In a second aspect, the present invention further provides a method for dynamically forming a field anti-plasma, which is applied to the device for dynamically forming a field anti-plasma as described in any one of the first aspects, comprising:

[0023] S1, turning on the bias circuit, the bias circuit passes a reverse current into the bias coil, so that the bias coil generates a reverse magnetic field in the vacuum chamber, providing an initial bias magnetic field;

[0024] S2, turning on the ionization coil to form a rotating magnetic field to ionize the gas in the vacuum chamber and generate a plasma whose internal magnetic field is an initial bias magnetic field;

[0025] S3. According to the distance of each main discharge coil from the central collision and fusion zone, the main discharge coils are connected in sequence from far to near, and the main discharge coil group generates an axial gradient positive magnetic field in the vacuum chamber to dynamically form a field-inverted plasma; when the current of the main discharge coil group reaches the maximum value in turn, the corresponding freewheeling branch is automatically connected, the current in the main discharge coil group decreases in turn, and the field-inverted plasma enters the collision and fusion zone to form a fusion field-inverted plasma.

[0026] Compared with the prior art, the above technical solution conceived by the present invention can achieve the following beneficial effects:

[0027] 1. The present invention provides a field reverse plasma dynamic formation device, wherein the branch circuits are independent of each other. Generally speaking, the circuit voltage of the bias circuit is lower than the circuit voltage of the main discharge circuit. Compared with the existing scheme in which the bias circuit and the main discharge circuit are connected in parallel, the required circuit element withstand voltage value needs to be selected according to the maximum branch voltage. In this scheme, the parameters of each element can be flexibly selected according to the actual conditions of each branch during use, so that the device structure is simple and the cost is reduced. In addition, the branches of this scheme are independent of each other, and there is no shunting phenomenon in the existing scheme. Therefore, when using elements with the same parameters, the current that can be obtained in the coil is larger, and the power supply efficiency is higher, thereby improving the discharge reliability and stability, and improving the quality of the generated plasma.

[0028] 2. The present invention provides a field reverse plasma dynamic formation device, which uses a hydrogen thyristor as a pulse high-voltage switch. The driving process is relatively complicated, and there is a certain failure rate in triggering conduction. The conduction probability of a single hydrogen thyristor is about 90%. In the existing solution, because the four branches are connected in parallel, the overall discharge success rate is about 65% (90%). 4 ), in this scheme, by decoupling the original coil and circuit, the use of hydrogen thyratron is reduced, the discharge success rate can be increased to 80-90%, the discharge reliability is greatly improved, and the quality of the generated field anti-plasma is improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 This is a typical power topology diagram of the field reverse θ-pinch in the prior art;

[0030] Figure 2 It is a schematic diagram of a typical current waveform of a field reverse θ-pinch power supply discharge in the prior art;

[0031] Figure 3 is a schematic diagram of a field anti-plasma dynamic formation device provided by an embodiment of the present invention;

[0032] Figure 4 It is a schematic diagram of a formation area of ​​a field anti-plasma dynamic formation device provided by an embodiment of the present invention;

[0033] Figure 5 is a side view of a formation region of a field counter plasma dynamic formation device provided by an embodiment of the present invention;

[0034] Figure 6 It is a partial isometric view of a main discharge coil and a bias coil in a formation region of a field counter plasma dynamic formation device provided by an embodiment of the present invention;

[0035] Figure 7 is a schematic diagram of a bias coil assembly circuit provided by an embodiment of the present invention;

[0036] Figure 8 is a schematic diagram of a single main discharge coil circuit provided by an embodiment of the present invention;

[0037] Fig. 9 Schematic diagram of the process of dynamically forming a field anti-plasma according to an embodiment of the present invention, wherein (a), (b), and (c) are schematic diagrams of the process corresponding to different moments;

[0038] Fig.10 It is a comparative schematic diagram of the formation area circuit and coil corresponding to the prior art and the embodiment of the present invention.

[0039] In all the drawings, the same figure numbers are used to represent the same elements or structures, among which, 1-vacuum chamber; 2-main discharge coil; 3-bias coil; 4-ionization coil; 5-end chamber; 6-formation zone; 7-collision fusion zone; 8-magnetic mirror coil; 9-magnetic lines; 10-plasma; 11-main discharge branch; 12-following branch. DETAILED DESCRIPTION

[0040] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0041] The contents involved in the above embodiment are described below in conjunction with a preferred embodiment.

[0042] Embodiment 1

[0043] like Figure 3 and Figure 4 As shown, a field anti-plasma dynamic forming device provided by the present invention comprises two forming regions 6 and a collision fusion region 7, wherein the two forming regions 6 are arranged at two ends of the collision fusion region 7;

[0044] The forming area 6 includes a vacuum chamber 1, a main discharge coil 2, a bias coil 3 and an ionization coil 4;

[0045] The main discharge coil 2 is wound on the outer surface of the vacuum chamber 1; the bias coil 3 is wound on the outer side of the main discharge coil 2; the ionization coil 4 is arranged perpendicular to the main discharge coil 2 and the bias coil 3;

[0046] The ionization coil 4 is used to form a rotating magnetic field to ionize the gas in the vacuum chamber 1 to generate plasma;

[0047] A plurality of the bias coils 3 are connected in series and then connected to a bias circuit, wherein the bias circuit is used to simultaneously pass a reverse current through the plurality of bias coils 3, and the bias coils 3 are used to generate a reverse magnetic field in the vacuum chamber;

[0048] Each main discharge coil 2 is connected to a main discharge branch 11 and a freewheeling branch 12 in parallel; the main discharge branch 11 is used to pass a positive current into the corresponding main discharge coil 2; the main discharge coil is used to generate an axial gradient positive magnetic field in the vacuum chamber 1 to dynamically form a field-reversed configuration plasma; the freewheeling branch 12 is automatically connected when the current of the main discharge coil 2 is maximum, so as to reduce the current of the main discharge coil 2;

[0049] The anti-configuration plasma undergoes collision and fusion in the collision and fusion zone 7 .

[0050] Among them, the temperature and density of the fusion field anti-configuration plasma generated in the collision fusion zone 7 are greater than the temperature and density of the field anti-configuration plasma.

[0051] The embodiment of the present invention provides a field-reverse plasma dynamic formation device, which aims to solve the problem of low power supply reliability in the prior art. In the prior art, since the branches of the circuit are directly connected in parallel, there is serious mutual coupling, which affects the reliability of the power supply. In addition, the hydrogen thyristor switch used in the prior art is complex to drive, and the discharge reliability and repeatability are poor, while the quality of the field-reverse configuration requires high accuracy and repeatability of the power supply. This embodiment improves the reliability and stability of the power supply by decoupling the four branches of bias (Bias), pre-ionization (PI), field reverse (Main) and freewheeling (Crowbar) in the dynamic formation process, thereby improving the parameters and repeatability of the final formation of the field-reverse configuration plasma.

[0052] like Figure 4 , Figure 5 and Figure 6As shown, the field reverse plasma dynamic forming device includes a vacuum chamber 1, a main discharge coil group consisting of a plurality of main discharge coils 2, a bias coil group consisting of a plurality of bias coils 3, and an ionization coil consisting of a plurality of ionization coils 4. The bias coils 3 and the main discharge coils 2 are arranged in a double layer, and each bias coil 3 is located in the outer layer of the main discharge coil 2 and is placed vertically to the ionization coil 4.

[0053] First, the bias circuit is turned on so that a reverse current is passed through the bias coil 3, and a proper amount of gas is injected into the vacuum chamber 1. Then, the ionization coil 4 is started to generate a rotating magnetic field to ionize the gas in the vacuum chamber 1 and generate plasma. The main discharge branch 11 connected to each main discharge coil 2 is triggered and turned on according to a specific timing, so that a forward current is passed through the main discharge coil 2 group according to the timing, a field anti-plasma is formed in the vacuum chamber 1, and it is ejected to the middle collision and fusion zone 7. Finally, when the current of the main discharge coil 2 reaches the highest point, the freewheeling branch 12 of each main discharge coil 2 is actively turned on in turn, and the current slowly decreases to zero. Finally, the field anti-position plasma dynamically formed in the formation zone 6 on both sides is ejected into the middle collision and fusion zone 7 for collision and fusion.

[0054] Wherein, the bias circuit is composed of a capacitor Cbias and a hydrogen thyristor switch Sbias connected in series; the main discharge branch 11 is composed of a main discharge capacitor Cmain and a hydrogen thyristor switch Smain connected in series;

[0055] The freewheeling branch 12 is composed of a DC diode Dcrowbar and a freewheeling resistor Rcrowbar connected in series.

[0056] When working, the hydrogen thyristor switch Sbias in the bias circuit is turned on, and the reverse-connected capacitor Cbias is discharged, so that a reverse current flows into the bias coil 3. The schematic diagram of the bias coil circuit is shown in FIG. Figure 7 As shown, multiple bias coils are connected in series to increase the self-inductance of the coils, and the value of the external inductance Lbias is determined according to the mutual inductance generated by the main discharge coil and the bias coil in the actual process.

[0057] Each ionization coil consists of two sets of identical coils, each set of coils is 90° apart. When the reverse current in the bias coil reaches the maximum, the ionization coil starts to work, generating a rotating magnetic field, thereby ionizing the gas in the vacuum chamber, generating a density of about 10 19-20 m -3 The plasma is ionized by a 90° angle, and the magnetic field strength inside the plasma is equal to the initial bias magnetic field. The phases of each set of coils differ by 90°, making the distribution of the ionized plasma in the vacuum chamber more uniform.

[0058] The circuit diagram of a single main discharge coil is as follows: Figure 8As shown, each coil is connected to two branches, a main discharge branch 11 and a freewheeling branch 12. The main discharge branch 11 is generally composed of a main discharge capacitor Cmain and a hydrogen thyristor switch Smain, and the freewheeling branch 12 is composed of a DC diode Dcrowbar and a freewheeling resistor Rcrowbar connected in series.

[0059] The specific operation process of the dynamic formation method in the formation zone is as follows: triggering the hydrogen thyristor switch Sbias in the bias circuit to discharge the capacitor Cbias, so that a reverse current is passed through the coil, and at the same time, an appropriate amount of gas is injected into the vacuum chamber, and the ionization coil is started to generate a rotating magnetic field to ionize the gas in the vacuum chamber. At this time, the internal magnetic field of the ionized initial plasma is the reverse magnetic field generated by the bias coil in the vacuum chamber; when the plasma density reaches a predetermined value, the hydrogen thyristors in the multiple main discharge coil circuits are triggered and turned on according to a specific timing sequence, that is, the hydrogen thyristor switches Smain in the main discharge circuits are opened in sequence from far to near according to the distance from the central collision and fusion zone, and the opening time interval of the hydrogen thyristor switches Smain in the main discharge circuits of two adjacent main discharge coils is 1-3μs, and the capacitor in the main discharge circuit is discharged, so that a forward current is passed through the main discharge coil in sequence; at this time, the plasma in the vacuum chamber has an axial gradient forward magnetic field generated by the main discharge coil group, such as Fig. 9 As shown in the schematic diagram of the dynamic formation of field anti-plasma process, it can be seen that the magnetic field generated by the magnetic mirror coil 8 cooperates with the magnetic field generated by the bias coil group to form the initial magnetic field configuration. With the positive magnetic field of the axial gradient generated by the main discharge coil group, the plasma 10 moves to one side along the envelope of the magnetic field lines 9. Finally, when the current of the main discharge coil reaches the highest point, the DC diode Dcrowbar of the freewheeling branch is automatically turned on, and the current slowly decreases to zero through the freewheeling resistor Rcrowbar, continuously applying pressure to the movement of the plasma toward the center and accelerating the plasma. The plasma gradually forms a field reversal magnetic field configuration with positive outside and negative inside at the junction of the formation zone and the collision and fusion zone. Finally, the field anti-configuration plasma dynamically formed on both sides is ejected into the formation zone in the middle for collision and fusion.

[0060] Based on the above embodiment, the number of the main discharge coil 2, the bias coil 3 and the ionization coil 4 is greater than 2, and the number is positively correlated with the length of the vacuum chamber 1. In this embodiment, one formation area includes 12 main discharge coils, 6 ionization coils and 12 bias coils; another formation area is configured in the same manner.

[0061] In a specific embodiment, the capacitor in the bias circuit uses four 54.1μF capacitors in parallel, with an initial capacitor voltage of -15kV, a series inductance of 100μH, a bias coil self-inductance of 7.1μH, a line resistance of approximately 200mΩ, and a current of -17.5kA can be generated in the coil; when the coil diameter is 647mm, a maximum magnetic field of -0.07T can be generated in the vacuum chamber; an 8μF capacitor is used in the main discharge circuit, with an initial capacitor voltage of 30kV and a freewheeling resistance of 20mΩ; the coil self-inductance of the main discharge coil is 1μH, and the main discharge coil starts to discharge when the bias coil current reaches a maximum value, and each coil discharges in turn with an interval of 2μs. The maximum discharge current of the main discharge coil is approximately 75kA, and when the coil diameter is 699mm, a maximum magnetic field of 0.23T can be generated in the vacuum chamber, causing the plasma to dynamically form a field inversion shape.

[0062] The embodiments of the present invention can decouple the original coil and circuit, such as Fig.10As shown, the upper circuit is a schematic diagram of the forming zone circuit and coil in the prior art, and the lower circuit is a schematic diagram of the forming zone circuit and coil in the embodiment of the present invention. In the prior art, in order to meet the four stages of bias, pre-ionization, field reversal, and freewheeling in the dynamic forming process, each single coil is connected to four parallel branches corresponding to these four stages. When the coil is working, the capacitors C1, C2, and C3 in the four branches connected to each coil are first charged to the set voltage value, and then the switches S1, S2, and S3 are turned on in sequence to discharge the θ-pinch coil, and finally the switch S4 is turned on to complete the freewheeling. Among them, S1-S4 generally use hydrogen thyristors as switches. In the embodiment of the present invention, a bias coil group composed of a bias coil 3 is separately designed in the bias stage, and the bias coil group is connected in series to replace the bias branch in the original circuit; the pre-ionization branch is replaced by an ionization coil group composed of an ionization coil 4; the field reversal branch and the freewheeling branch are realized by the main discharge branch 11 and the freewheeling branch 12 connected to the main discharge coil 2; when working, the capacitor Cbias and the capacitor CMain are first charged to a set voltage value, and then Sbias is turned on to generate a reverse magnetic field in the vacuum chamber, and then the ionization field coil group composed of the ionization field coil 4 starts to work, ionizes the gas injected into the vacuum chamber, and generates plasma, and finally SMain is turned on to turn on the main discharge branch 11, and a forward current is passed into the main discharge coil 2, and a forward magnetic field is generated in the vacuum chamber. When the current of the main discharge coil 2 reaches a maximum value, the freewheeling resistor diode Dcrowbar can be automatically turned on, and the freewheeling stage begins. Compared with the existing circuit, the embodiment of the present invention reduces the influence between the branches. Specifically, the circuit voltage in the bias stage is usually less than the circuit voltage of the main discharge. The existing circuit is connected in parallel, and the device can only be selected according to the main discharge branch with the largest voltage. The embodiment of the present invention can flexibly select the parameters of each component according to the actual situation of each circuit during use; secondly, the branches of the existing plasma generation circuit are directly connected in parallel, and there is serious mutual coupling. Since the impedance between the branches is very small, serious oscillation coupling will be generated between the two branches during discharge, thereby causing voltage and current spikes. This situation not only increases the requirements for capacitors, hydrogen thyristor withstand voltage and inrush current parameters, increases the cost of the device, but also may interfere with the normal conduction of the hydrogen thyristor according to the predetermined timing, thereby seriously affecting the reliability of the power supply, resulting in higher requirements for electronic components, increasing the cost of the device, and causing the technical problem of poor plasma generation quality. The present invention can decouple the four branches connected by the original single coil, improve the success rate of the overall discharge, effectively improve the reliability and stability of the power supply, and obtain a dynamically formed field inversion shape with higher parameters (density, temperature and movement speed).

[0063] Embodiment 2

[0064] The present invention further provides a method for dynamically forming a field anti-plasma, which is applied to the device for dynamically forming a field anti-plasma as described in the first embodiment, comprising:

[0065] S1, turning on the bias circuit, the bias circuit passes a reverse current into the bias coil, so that the bias coil generates a reverse magnetic field in the vacuum chamber, providing an initial bias magnetic field;

[0066] S2, turning on the ionization coil to form a rotating magnetic field to ionize the gas in the vacuum chamber and generate a plasma whose internal magnetic field is an initial bias magnetic field;

[0067] S3. According to the distance of each main discharge coil from the central collision and fusion zone, the main discharge coils are connected in sequence from far to near, and the main discharge coil group generates an axial gradient positive magnetic field in the vacuum chamber to dynamically form a field-inverted plasma; when the current of the main discharge coil group reaches the maximum value in turn, the corresponding freewheeling branch is automatically connected, the current in the main discharge coil group decreases in turn, and the field-inverted plasma enters the collision and fusion zone to form a fusion field-inverted plasma.

[0068] Among them, the temperature and density of fusion field anti-plasma are higher than those of field anti-configuration plasma.

[0069] Based on the field-reverse plasma dynamic forming device and power supply structure of the present invention, the above method is adopted to improve the density, temperature and movement speed of the dynamically formed field-reverse configuration plasma through reliable and stable circuit operation and high-precision timing coordination.

[0070] It will be easily understood by those skilled in the art that the above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A field reverse plasma dynamic forming device, characterized in that: It comprises two forming areas and a collision and fusion area, wherein the two forming areas are arranged at two ends of the collision and fusion area; The formation area includes a vacuum chamber, a main discharge coil, a bias coil and an ionization coil; The main discharge coil is wound on the outer surface of the vacuum chamber; the bias coil is wound on the outer side of the main discharge coil; the ionization coil is arranged perpendicular to the main discharge coil and the bias coil; The ionization coil is used to form a rotating magnetic field to ionize the gas in the vacuum chamber to generate plasma; A plurality of the bias coils are connected in series and then connected to a bias circuit, wherein the bias circuit is used to simultaneously pass a reverse current through the plurality of bias coils; the bias coils are used to generate a reverse magnetic field in a vacuum chamber; Each main discharge coil is connected to a main discharge branch and a freewheeling branch in parallel; the main discharge branch is used to pass a forward current into the corresponding main discharge coil; the main discharge coil is used to generate an axial gradient forward magnetic field in the vacuum chamber to dynamically form a field inversion plasma; the freewheeling branch is automatically connected when the current of the main discharge coil is maximum, so as to reduce the current of the main discharge coil; The anti-configuration plasma undergoes collision and fusion in the collision and fusion zone.

2. The device according to claim 1, characterized in that The device also includes an end chamber, which is located outside the two forming areas respectively; The end chamber is used to increase the space at both ends of the vacuum chamber and reduce the contact between the plasma and the vacuum chamber wall.

3. The device according to claim 1, characterized in that Each of the ionization coils is composed of two groups of identical coils, and the phase difference between the coils in each group is 90°.

4. The device according to claim 1, characterized in that The main discharge branch is composed of a main discharge capacitor Cmain and a hydrogen thyristor switch Smain in series; The freewheeling branch is composed of a DC diode Dcrowbar and a freewheeling resistor Rcrowbar in series.

5. The device according to claim 4, characterized in that The opening time interval of the hydrogen thyristor switch Smain in the main discharge branch of two adjacent main discharge coils is in the range of 1-3 μs.

6. The device according to claim 1, characterized in that The bias circuit is composed of a capacitor Cbias and a hydrogen thyristor switch Sbias connected in series.

7. The device according to claim 1, characterized in that One forming area includes 12 main discharge coils, 6 ionization coils and 12 bias coils.

8. A method for dynamically forming a field-reverse plasma, characterized in that: Applicable to the field reverse plasma dynamic formation device as claimed in any one of claims 1 to 7, comprising: S1, turning on the bias circuit, the bias circuit passes a reverse current into the bias coil, so that the bias coil generates a reverse magnetic field in the vacuum chamber, and provides an initial bias magnetic field; S2, turning on the ionization coil to form a rotating magnetic field to ionize the gas in the vacuum chamber and generate a plasma whose internal magnetic field is an initial bias magnetic field; S3. According to the distance of each main discharge coil from the central collision and fusion zone, the main discharge coils are connected in sequence from far to near, and the main discharge coil group generates an axial gradient positive magnetic field in the vacuum chamber to dynamically form a field-inverted plasma; when the current of the main discharge coil group reaches the maximum value in turn, the corresponding freewheeling branch is automatically connected, the current in the main discharge coil group decreases in turn, and the field-inverted plasma enters the collision and fusion zone to form a fusion field-inverted plasma.

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