Diamond-based hydrogen-silicon double-terminal device and forming method thereof

Abstract

The invention relates to a diamond-based hydrogen-silicon dual-terminal device and a forming method thereof. The method comprises the following steps: forming a hydrogen terminal conductive layer, a dielectric layer and a silicon-containing material layer which are sequentially stacked on a diamond substrate along a first direction; forming a diamond layer and obtaining a silicon terminal conducting layer; a first electrode extending in the first direction is formed, a second electrode extending in the first direction is formed, the second electrode and the first electrode are arranged in a spaced mode, the first electrode is electrically connected to the hydrogen terminal conducting layer and the silicon terminal conducting layer, and the second electrode is electrically connected to the hydrogen terminal conducting layer and the silicon terminal conducting layer; forming a gate dielectric layer stacked on one side, opposite to the silicon terminal conductive layer, of the diamond layer; and forming a gate conductive layer stacked on one side of the gate dielectric layer opposite to the silicon terminal composite layer, wherein the gate conductive layer is located between the first electrode and the second electrode. According to the method, a double-terminal device can be realized, the defects of a single-terminal device are overcome, and diversified application of a diamond device is realized.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a diamond-based hydrogen-silicon dual-terminal device and a forming method thereof. Background Art

[0002] With the development of semiconductor technology, the performance of semiconductor devices continues to expand and improve. Semiconductor materials will greatly affect the semiconductor devices they are used in.

[0003] Diamond has excellent properties such as wide band gap, high breakdown voltage, high electron-hole mobility, low dielectric constant, high thermal conductivity, radiation resistance, and good chemical stability. It plays an irreplaceable role in electronic power devices, solid-state spin quantum devices, ultraviolet light-emitting diodes, etc.

[0004] However, to realize the application of diamond materials in semiconductor devices, it is necessary to increase the carrier concentration and then achieve higher mobility. Summary of the invention

[0005] Based on this, it is necessary to provide a diamond-based hydrogen-silicon dual-terminal device and a method for forming the same in order to improve the carrier concentration of diamond-based semiconductor devices.

[0006] The present invention provides a method for forming a hydrogen-silicon dual-terminal device based on diamond, the method comprising: forming a hydrogen-terminal conductive layer, a dielectric layer and a silicon-containing material layer stacked in sequence on a diamond substrate along a first direction; forming a prefabricated diamond layer stacked on the side of the silicon-containing material layer facing away from the dielectric layer to obtain a diamond layer, and obtaining a silicon-terminal conductive layer stacked between the diamond layer and the silicon-containing material layer; and forming a first electrode extending along the first direction and a second electrode extending along the first direction, the second electrode being spaced apart from the first electrode, the first electrode being electrically connected to the hydrogen-terminal conductive layer and the silicon-terminal conductive layer, and the second electrode being electrically connected to the hydrogen-terminal conductive layer and the silicon-terminal conductive layer; forming a gate dielectric layer stacked on the side of the diamond layer facing away from the silicon-terminal conductive layer; and forming a gate conductive layer stacked on the side of the gate dielectric layer facing away from the silicon-terminal composite layer, the gate conductive layer being located between the first electrode and the second electrode.

[0007] The method for forming a diamond-based hydrogen-silicon dual-terminal device provided by the present invention can form a dual-terminal device, overcoming the defects of a single-terminal device. The formed diamond-based hydrogen-silicon dual-terminal device has a high carrier concentration, good DC characteristics and radio frequency characteristics, and can be applied to high-power demand scenarios.

[0008] In some embodiments, the step of forming a first electrode includes: forming a first electrode hole that penetrates the silicon-terminated composite layer and extends through the hydrogen-terminated conductive layer; and forming a first electrode that fills the first electrode hole; the step of forming a second electrode includes: forming a second electrode hole that penetrates the silicon-terminated composite layer and extends through the hydrogen-terminated conductive layer; and forming a second electrode that fills the second electrode hole.

[0009] With such arrangement, the diamond substrate can be used to ensure the overall structural strength and the controllability of the gate conductive layer.

[0010] In some embodiments, a hydrogen-terminated conductive layer stacked on a diamond substrate is formed by a first microwave plasma chemical vapor deposition process, the power of the first microwave plasma chemical vapor deposition process is 1500W to 3000W, the chamber pressure is 60Torr to 90Torr, the temperature is 700°C to 800°C, the duration is 15min to 30min, and the hydrogen flow rate is 500sccm to 600sccm.

[0011] Such an arrangement can ensure the formation of a hydrogen-terminated conductive layer.

[0012] Exemplarily, the dielectric layer is formed by a first atomic layer deposition process, and the temperature of the first atomic layer deposition process is 100° C. to 500° C.

[0013] Such an arrangement helps to protect the hydrogen terminal conductive layer and facilitates the formation of subsequent structures.

[0014] Exemplarily, the silicon-containing material layer is formed by a plasma enhanced chemical vapor deposition process, the temperature of the plasma enhanced chemical vapor deposition process is 200° C. to 400° C., and the deposition rate is 20 nm / min to 30 nm / min.

[0015] Such an arrangement can effectively form a silicon-containing material layer and help ensure the surface state of the silicon-containing material layer, so as to help form a silicon terminal conductive layer.

[0016] Exemplarily, the step of forming a diamond layer includes: epitaxially forming a prefabricated diamond layer through a second microwave plasma chemical vapor deposition process, the power of the second microwave plasma chemical vapor deposition process is 1500W to 5000W, the chamber pressure is 60Torr to 120Torr, the temperature is 700℃ to 900℃, the duration is 60min to 120min, the hydrogen flow rate is 500sccm to 600sccm, and the methane flow rate is 20sccm to 40sccm.

[0017] Such an arrangement helps to ensure the structural stability of the diamond layer and facilitates the formation of the silicon terminal conductive layer.

[0018] Exemplarily, the first electrode is formed by deposition, and the second electrode is formed by deposition; wherein the method further comprises annealing the first electrode and the second electrode to achieve ohmic contact, and the annealing temperature is 300°C to 600°C.

[0019] Such an arrangement can ensure the bonding strength between the first electrode and the second electrode and ensure the electrical connection performance.

[0020] Exemplarily, the gate dielectric layer is formed by a second atomic layer deposition process, and the temperature of the second atomic layer deposition process is 200° C. to 400° C.

[0021] Exemplarily, a gate conductive layer is formed by an electron beam evaporation process using a patterned mask; and the mask is removed.

[0022] With such arrangement, a gate dielectric layer and a gate conductive layer can be formed, and the integrity of the first electrode and the second electrode can be ensured.

[0023] The method provided by the present invention can form a diamond-based hydrogen-silicon dual-terminal device with stable structure and reliable performance.

[0024] The present invention also provides a diamond-based hydrogen-silicon dual-terminal device, which includes: a diamond substrate, a hydrogen-terminal conductive layer, a dielectric layer, a silicon-containing material layer, a silicon-terminal conductive layer, a diamond layer, a gate dielectric layer and a gate conductive layer stacked in sequence along a first direction; and a first electrode and a second electrode, the first electrode extending along the first direction and electrically connected to the hydrogen-terminal conductive layer and the silicon-terminal conductive layer, the second electrode extending along the first direction and electrically connected to the hydrogen-terminal conductive layer and the silicon-terminal conductive layer, the second electrode being spaced apart from the first electrode, wherein the gate conductive layer is located between the first electrode and the second electrode.

[0025] The diamond-based hydrogen-silicon dual-terminal device provided by the present invention achieves a higher device channel carrier concentration, and its DC characteristics and radio frequency characteristics exceed those of a single-terminal power device, and can be used as a high-power radio frequency device; at the same time, the diamond-based hydrogen-silicon dual-terminal device has a depletion-type hydrogen terminal device and an enhancement-type silicon terminal device, so it can be used as a complementary metal oxide semiconductor (CMOS) logic device. The present invention provides a solution for the diversified application of diamond devices.

[0026] The diamond-based hydrogen-silicon dual-terminal device is easy to manufacture, has guaranteed DC and RF characteristics, and has reliable performance as a logic device.

[0027] In some embodiments, the first electrode and the second electrode respectively penetrate the silicon terminal composite layer and extend through the hydrogen terminal conductive layer; the hydrogen silicon dual terminal device also includes a dielectric layer, a gate dielectric layer and a gate conductive layer, the dielectric layer is located between the hydrogen terminal composite layer and the silicon terminal composite layer, and the gate dielectric layer and the gate conductive layer are stacked in sequence along a first direction on the side of the silicon terminal composite layer facing away from the hydrogen terminal composite layer.

[0028] With such arrangement, the diamond substrate can be used to ensure the structural strength, and the gate conductive layer can well control the inner layer structure.

[0029] In some embodiments, the thickness of the diamond substrate is 0.2 mm to 0.5 mm, the thickness of the dielectric layer is 20 nm to 100 nm, the thickness of the silicon-containing material layer is 20 nm to 200 nm, the thickness of the gate dielectric layer is 25 nm to 50 nm, the thickness of the gate conductive layer is 100 nm to 300 nm, the spacing between the gate conductive layer and the first electrode and the spacing between the gate conductive layer and the second electrode are respectively in the range of 0.5 μm to 3 μm, and the length of the gate conductive layer along the direction in which the first electrode and the second electrode are arranged is 0.1 μm to 0.5 μm.

[0030] With this arrangement, the diamond-based hydrogen-silicon dual-terminal device is easy to manufacture and has stable electrical performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 A flowchart of a method for forming a diamond-based hydrogen-silicon double-terminal device provided for an embodiment of the present invention;

[0032] Figure 2 A schematic diagram of the process for forming a hydrogen terminal conductive layer;

[0033] Figure 3 A schematic structural diagram of a prefabricated structure after forming an intermediary layer;

[0034] Figure 4 A schematic structural diagram of a prefabricated structure after forming a silicon-containing material layer;

[0035] Figure 5 A schematic structural diagram of a prefabricated structure after a prefabricated diamond layer is formed;

[0036] Figure 6 A schematic structural diagram of a prefabricated structure after obtaining a silicon terminal conductive layer;

[0037] Figure 7 A schematic structural diagram of a prefabricated structure after forming a first electrode hole and a second electrode hole;

[0038] Figure 8 A schematic structural diagram of a prefabricated structure after forming a first electrode and a second electrode;

[0039] Fig. 9 A schematic structural diagram of a prefabricated structure after a gate dielectric layer is formed;

[0040] Fig.10 A schematic structural diagram of a diamond-based hydrogen-silicon dual-terminal device provided in an embodiment of the present invention;

[0041] Fig.11 A structural block diagram of an electronic device provided in an embodiment of the present invention.

[0042] Description of reference numerals: 1, diamond substrate; 2, hydrogen plasma; 3, hydrogen terminal conductive layer; 4, dielectric layer; 5, silicon-containing material layer; 6, diamond layer; 60, prefabricated diamond layer; 7, silicon terminal conductive layer; 81, first electrode hole; 82, second electrode hole; 83, first electrode; 84, second electrode; 9, gate dielectric layer; 10, gate conductive layer;

[0043] 100. Hydrogen terminal composite layer; 200. Silicon terminal composite layer; 300. Hydrogen silicon dual terminal device; 400. Peripheral circuit; 500. Electronic device. DETAILED DESCRIPTION

[0044] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the specific embodiments of the present invention are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present invention. However, the present invention can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present invention, so the present invention is not limited by the specific embodiments of the following disclosed embodiments.

[0045] In the description of the present invention, it is to be understood that the terms “center”, “longitudinal”, “lateral”, “length”, “width”, “thickness”, “up”, “down”, “front”, “back”, “left”, “right”, “vertical”, “perpendicular”, “horizontal”, “top”, “bottom”, “inside”, “outside”, “clockwise”, “counterclockwise”, “axial”, “radial”, “circumferential”, etc., indicating orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0046] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being "above", "above" or "above" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being "below", "below" or "below" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0047] In addition, the terms "first", "second", "third", etc. are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, the features defined as "first" or "second" may explicitly or implicitly include at least one of the features. Exemplarily, the first electrode may also be referred to as the second electrode, and the second electrode may also be referred to as the first electrode. In the description of the present invention, "multiple" means at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0048] In the present invention, unless otherwise clearly specified and limited, the terms "connected", "connection", etc. should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integrated connection; it can be a flexible connection, or a rigid connection along at least one direction; it can be a mechanical connection or an electrical connection; it can be directly connected, or indirectly connected through an intermediate medium, or directly connected with the presence of an intermediate medium, or it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. The terms "install", "set", "fix", etc. can be broadly understood as connection. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0049] As used herein, the terms "layer" and "region" refer to a portion of a material that includes an area with a certain thickness. A layer can extend horizontally, vertically and / or along a tapered surface. A layer can be an area of ​​a uniform or non-uniform continuous structure, and its thickness perpendicular to the extension direction may not be greater than the thickness of the continuous structure. A layer can include multiple layers, which can be stacked layers or multiple layers extending discretely. The shapes of various regions and layers in the drawings and their relative sizes and positional relationships are only exemplary, and may actually deviate due to manufacturing tolerances or technical limitations, and the design can be adjusted according to actual needs.

[0050] See also Figure 1 , Figure 1The method for forming a hydrogen-silicon double-terminal device based on diamond in an embodiment of the present invention is shown. The method 1000 for forming a hydrogen-silicon double-terminal device based on diamond provided in an embodiment of the present invention comprises step S101, step S103 and step S104.

[0051] Step S101, forming a hydrogen-terminated composite layer. Exemplarily, step S101 includes forming a hydrogen-terminated conductive layer stacked on a diamond substrate along a first direction.

[0052] Exemplarily, the method 1000 for forming a diamond-based hydrogen-silicon dual-terminal device further includes step S102: forming a dielectric layer. Specifically, forming a dielectric layer stacked on a side of the hydrogen-terminated conductive layer facing away from the diamond substrate.

[0053] Step S103, forming a silicon terminal composite layer. The silicon terminal composite layer is stacked on the side of the hydrogen terminal conductive layer facing away from the diamond substrate along the first direction. The silicon terminal composite layer includes a silicon-containing material layer, a silicon terminal conductive layer and a diamond layer stacked in sequence along the first direction. In some embodiments, the silicon-containing material layer, the silicon terminal conductive layer and the diamond layer are stacked in sequence in a direction away from the hydrogen terminal conductive layer; in other embodiments, the diamond layer, the silicon terminal conductive layer and the silicon-containing material layer are stacked in sequence in a direction away from the hydrogen terminal conductive layer. Exemplarily, the silicon terminal composite layer is stacked on the side of the dielectric layer facing away from the hydrogen terminal conductive layer.

[0054] Step S104, forming a first electrode and forming a second electrode. The step of forming the first electrode and the step of forming the second electrode can be performed simultaneously or separately. Exemplarily, a first electrode extending along a first direction is formed, the first electrode is electrically connected to the hydrogen terminal conductive layer and the silicon terminal conductive layer, and the first electrode can be led out from the side where the diamond layer is located. Exemplarily, a second electrode extending along the first direction is formed, the second electrode is electrically connected to the hydrogen terminal conductive layer and the silicon terminal conductive layer. The second electrode can be led out from the side where the diamond layer is located. The second electrode is spaced apart from the first electrode.

[0055] In some embodiments, a gate structure is formed on the side of the silicon terminal composite layer facing away from the hydrogen terminal composite layer. In other embodiments, a gate structure is formed on the side of the hydrogen terminal composite layer facing away from the silicon terminal composite layer. The step of forming the gate structure may include: step S105, forming a gate dielectric layer; and step S106, forming a gate conductive layer, wherein the gate conductive layer is stacked on the gate dielectric layer.

[0056] The method provided by the present invention can be used to form a hydrogen-silicon dual-terminal device, which is a hydrogen-silicon dual-terminal device based on diamond and has stronger performance than a single-terminal power device. The method can help diamond materials achieve more diversified applications. The method aims at the problems of two-dimensional hole gas, carrier mobility, process compatibility and controllability of material preparation of diamond, and provides a new solution idea and process flow for the design and manufacture of new diamond-based semiconductor devices.

[0057] Combination Figures 2 to 10 As shown, a method 1000 for forming a diamond-based hydrogen-silicon double-terminal device provided by an embodiment of the present invention is described in detail.

[0058] Figure 2 Schematic process states of the step of forming a hydrogen-terminated conductive layer in an embodiment of the present invention are shown. In some embodiments, a first microwave plasma chemical vapor deposition (MPCVD) process may be performed on the surface of the diamond substrate 1. The hydrogen plasma 2 meets and combines with the diamond substrate 1 to form a hydrogen-terminated conductive layer 3 ( Figure 3 ).

[0059] Exemplarily, the thickness of the diamond substrate 1 is 0.2 mm to 0.5 mm. The diamond substrate 1 may be a composite substrate, the top layer of which is made of diamond.

[0060] Exemplarily, the hydrogen-terminated conductive layer 3 stacked on the diamond substrate 1 can be formed by a first microwave plasma chemical vapor deposition (MPCVD) process, the power of the first microwave plasma chemical vapor deposition process is 1500W to 3000W, the chamber pressure is 60Torr to 90Torr, the temperature is 700℃ to 800℃, the duration is 15min to 30min, and the hydrogen flow rate is 500sccm to 600sccm. Exemplarily, the power of the process can be, for example, 2000W, 2500W; the chamber pressure can be, for example, 70Torr, 80Torr; the temperature can be, for example, 730℃, 760℃, 790℃; the time length can be, for example, 18min, 23min or 27min; the hydrogen flow rate can be, for example, 520sccm, 540sccm, 560sccm or 580sccm. In this way, a stable and reliable hydrogen-terminated conductive layer 3 can be formed.

[0061] For example, the dielectric layer 4 can be formed by a first atomic layer deposition process to obtain Figure 3 The prefabricated structure shown. It is understandable that the structure obtained in each step can be used as a prefabricated structure for the next step. The hydrogen-silicon dual-terminal device 300 ( Fig.10) can still be processed subsequently. The diamond substrate 1 and the hydrogen terminal conductive layer 3 are used to form the hydrogen terminal composite layer 100. The temperature of the first atomic layer deposition process is 100°C to 500°C, for example, 200°C, 300°C or 400°C. The dielectric layer 4 helps to protect the hydrogen terminal conductive layer 3 and serves as the basis for the formation of the next functional layer. Along the Z-axis direction, that is, the first direction in this article, the dielectric layer 4 is stacked on the hydrogen terminal conductive layer 3 of the hydrogen terminal composite layer 100.

[0062] Exemplarily, the material of the dielectric layer 4 may include a high work function material, for example, at least one of Al2O3, MoO3, and HfO2. The dielectric layer 4 has a thickness of 20 nm to 100 nm, for example, 40 nm to 60 nm.

[0063] refer to Figure 4 The silicon-containing material layer 5 may be stacked on the dielectric layer 4, and the silicon-containing material layer 5 may be located on the side of the hydrogen terminal conductive layer 3 facing away from the diamond substrate 1. The material of the silicon-containing material layer 5 may include at least one of Si, SiO2 and SiC.

[0064] Exemplarily, the silicon-containing material layer 5 can be formed by a plasma enhanced chemical vapor deposition (PECVD) process. The temperature of the plasma enhanced chemical vapor deposition process is 200° C. to 400° C., for example, 250° C., 300° C. or 350° C.; the deposition rate is 20 nm / min to 30 nm / min. Exemplarily, the thickness of the silicon-containing material layer 5 is 20 nm to 200 nm, for example, 50 nm to 100 nm.

[0065] For example, the prefabricated diamond layer 60 can be epitaxially formed by a second microwave plasma chemical vapor deposition process to obtain Figure 5 The prefabricated structure shown in FIG.

[0066] Exemplarily, the power of the second microwave plasma chemical vapor deposition process is 1500W to 5000W, such as 2000W, 3000W or 4000W; the chamber pressure is 60Torr to 120Torr, such as 70Torr, 90Torr or 110Torr; the temperature is 700°C to 900°C, the duration is 60min to 120min, the hydrogen flow rate is 500sccm to 600sccm, such as 550sccm; the methane flow rate is 20sccm to 40sccm, such as 25sccm, 30sccm or 35sccm. A stable prefabricated diamond layer 60 can be formed epitaxially.

[0067] refer to Figure 6, the contact surface of the prefabricated diamond layer 60 and the silicon-containing material layer 5 will naturally react to obtain the silicon terminal conductive layer 7, and the diamond layer 6 can be obtained based on the prefabricated diamond layer 60. The time for the reaction to form the silicon terminal conductive layer 7 is very short, and it can be considered that the silicon terminal conductive layer 7 is obtained earlier than the diamond layer 6, that is, the silicon terminal conductive layer 7 is obtained in the process of forming the prefabricated diamond layer 60. For example, it can be considered Figure 6 The middle silicon-containing material layer 5 is obtained based on a prefabricated silicon-containing material layer.

[0068] The silicon-containing material layer 5, the silicon terminal conductive layer 7 and the diamond layer 6 are used to form a silicon terminal composite layer 200. The steps of forming the silicon terminal composite layer 200 include: forming a silicon-containing material layer 5 stacked on the side of the hydrogen terminal conductive layer 3 facing away from the diamond substrate 1; and forming a prefabricated diamond layer 60 stacked on the side of the silicon-containing material layer 5 facing away from the hydrogen terminal conductive layer 3, to obtain a diamond layer 6 and a silicon terminal conductive layer 7 stacked between the diamond layer 6 and the silicon-containing material layer 5. The silicon terminal conductive layer 7 has a stable structure and the diamond layer 6 has an appropriate thickness.

[0069] In the prefabricated stacked structure, the hydrogen terminal composite layer 100, the dielectric layer 4 and the silicon terminal composite layer 200 are stacked in sequence. Specifically, the diamond substrate 1, the hydrogen terminal conductive layer 3, the dielectric layer 4, the silicon-containing material layer 5, the silicon terminal conductive layer 7 and the diamond layer 6 are stacked in sequence.

[0070] refer to Figure 7 , step S104 includes: forming a first electrode hole 81 penetrating the silicon terminal composite layer 200 and extending through the hydrogen terminal conductive layer 3; and forming a second electrode hole 82 penetrating the silicon terminal composite layer 200 and extending through the hydrogen terminal conductive layer 3. The first electrode hole 81 and the second electrode hole 82 both extend along the Z-axis direction, and the first electrode hole 81 and the second electrode hole 82 are spaced apart along the X-axis direction, and the spacing between the two can be 2μm to 3.5μm. The inner wall of the first electrode hole 81 and the inner wall of the second electrode hole 82 can expose the hydrogen terminal conductive layer 3 and the silicon terminal conductive layer 7 respectively. The X-axis direction can be called the second direction.

[0071] Illustratively, the first electrode hole 81 and the second electrode hole 82 may be etched using an inductively coupled plasma etching (ICP-RIE) process, and the etching gas is a fluorine-based gas or a chlorine-based gas.

[0072] refer to Figure 7 and Figure 8, step S104 includes: forming a first electrode 83 filling the first electrode hole 81 and forming a second electrode 84 filling the second electrode hole 82. Exemplarily, the first electrode 83 can be formed by deposition, and the second electrode 84 can be formed by deposition. When etching to form the first electrode hole 81 and the second electrode hole 82, the size of the electrode hole can be controlled according to the type of metal to be deposited. For example, when depositing Ti, the size of the electrode hole can be controlled to be 5nm to 10nm; when depositing Au, the size of the electrode hole can be controlled to be 80nm to 100nm. It is understandable that the spacing between the first electrode 83 and the second electrode 84 can be 2μm to 3.5μm. Ensuring the spacing between the first electrode 83 and the second electrode 84 helps to control the electrical properties of the structure between the two.

[0073] Exemplarily, the method 1000 further includes annealing the first electrode 83 and the second electrode 84 at a temperature of 300° C. to 600° C., such as 400° C. or 500° C. The temperature of the annealing can ensure that the first electrode 83 and the second electrode 84 are in ohmic contact with the prefabricated stacked structure respectively, and will not damage the functional layers formed in the prefabricated stacked structure.

[0074] refer to Fig. 9 , forming a gate dielectric layer 9 stacked along the first direction on the side of the silicon terminal composite layer 200 facing away from the hydrogen terminal composite layer 100. The gate dielectric layer 9 is located between the first electrode 83 and the second electrode 84. Exemplarily, the gate dielectric layer 9 is formed by a second atomic layer deposition process, and the temperature of the second atomic layer deposition process is 200° C. to 400° C., such as 250° C., 300° C. or 350° C. The thickness of the gate dielectric layer 9 is 25 nm to 50 nm, such as 30 nm or 40 nm.

[0075] refer to Fig.10 , forming a gate conductive layer 10 stacked along the first direction on the side of the gate dielectric layer 9 facing away from the silicon terminal composite layer 200. The size of the gate dielectric layer 9 along the X-axis direction can be made larger according to the preset size of the gate conductive layer 10. Exemplarily, a patterned mask can be formed by a photolithography process, and then a gate conductive layer 10 including an aluminum material is formed by an electron beam evaporation process, and then the mask is removed. The material of the gate conductive layer 10 includes aluminum, which can achieve effective control of channel carriers.

[0076] The thickness of the gate conductive layer 10 is 100 nm to 300 nm, and the distance between the gate conductive layer 10 and the first electrode 83 and the distance between the gate conductive layer 10 and the second electrode 84 are respectively in the range of 0.5 μm to 3 μm. The size of the gate conductive layer 10 along the X-axis direction is 0.1 μm to 0.5 μm. The width of the gate conductive layer 10 is 50 μm to 100 μm. Such a configuration helps to reduce the mutual interference between the gate conductive layer 10 and the first electrode 83 or the second electrode 84, and ensure the conductive performance.

[0077] Fig.10 The hydrogen-silicon dual-terminal device 300 provided in an embodiment of the present invention is shown. The hydrogen-silicon dual-terminal device 300 is a diamond-based hydrogen-silicon dual-terminal device. The hydrogen-silicon dual-terminal device 300 includes a hydrogen-terminated composite layer 100, a silicon-terminated composite layer 200, a first electrode 83, and a second electrode 84. The hydrogen-terminated composite layer 100 and the silicon-terminated composite layer 200 are stacked along the Z-axis direction. Exemplarily, the first electrode 83 and the second electrode 84 respectively penetrate the silicon-terminated composite layer 200 along the Z-axis direction and extend into the hydrogen-terminated composite layer 100.

[0078] Illustratively, the hydrogen-silicon dual-terminal device 300 includes a gate structure, and the gate structure is located on the silicon termination composite layer 200 facing away from the hydrogen termination composite layer 100. In other embodiments, the gate structure may be located on the hydrogen termination composite layer facing away from the silicon termination composite layer.

[0079] The hydrogen terminal composite layer 100 includes a diamond substrate 1 and a hydrogen terminal conductive layer 3 stacked along the Z-axis direction.

[0080] The silicon terminal composite layer 200 is stacked on the side of the hydrogen terminal conductive layer 3 facing away from the diamond substrate 1 along the Z-axis direction. The silicon terminal composite layer 200 includes a silicon-containing material layer 5, a silicon terminal conductive layer 7 and a diamond layer 6 stacked in sequence along the Z-axis direction.

[0081] The first electrode 83 extends along the Z-axis direction and is electrically connected to the hydrogen terminal conductive layer 3 and the silicon terminal conductive layer 7. The second electrode 84 also extends along the Z-axis direction and is electrically connected to the hydrogen terminal conductive layer 3 and the silicon terminal conductive layer 7. The second electrode 84 is spaced apart from the first electrode 83 along the X-axis direction. Exemplarily, the first electrode 83 is a source electrode, and the second electrode 84 is a drain electrode.

[0082] The hydrogen silicon dual terminal device 300 can effectively dissipate heat under ultra-high power working conditions by using the diamond substrate 1 and the diamond layer 6. The hydrogen silicon dual terminal device 300 has excellent thermal characteristics and a controllable conductive terminal structure. The thermal conductivity of the diamond material reaches 2000W / m·k. The diamond substrate 1 can enhance heat dissipation and reduce the junction temperature of the hydrogen silicon dual terminal device 300. Compared with, for example, gallium nitride RF devices, the hydrogen silicon dual terminal device 300 can avoid self-heating effects, enhance the frequency performance and breakdown resistance of the device, and improve the service life.

[0083] The hydrogen-silicon dual-terminal device 300 provided by the present invention achieves a relatively high device channel carrier concentration and can be used as a high-power radio frequency device; and because it has a depletion-type hydrogen terminal device and an enhancement-type silicon terminal device, it can be used as a CMOS logic device.

[0084] Diamond-based hydrogen-silicon dual-terminal devices have the characteristics of high breakdown voltage and low on-resistance, which significantly increases the current. Their Baliga quality factor is high and they are suitable for applications in high-power, high-frequency, and electronic equipment.

[0085] Exemplarily, diamond substrate 1, hydrogen terminal conductive layer 3, silicon-containing material layer 5, silicon terminal conductive layer 7 and diamond layer 6 are sequentially stacked along a first direction. The structure of hydrogen-silicon dual-terminal device 300 can avoid environmental interference with hydrogen terminal conductive layer 3, ensuring performance and life.

[0086] In some other embodiments, the diamond substrate, the hydrogen-terminated conductive layer, the diamond layer, the silicon-terminated conductive layer and the silicon-containing material layer are stacked in sequence along the first direction.

[0087] Exemplarily, the first electrode 83 and the second electrode 84 respectively penetrate the silicon terminal composite layer 200 and extend through the hydrogen terminal conductive layer 3. The first electrode 83 and the second electrode 84 may protrude from the silicon terminal composite layer 200 for external connection.

[0088] The hydrogen-silicon dual-terminal device 300 further includes a dielectric layer 4, a gate dielectric layer 9 and a gate conductive layer 10. The dielectric layer 4 is located between the hydrogen terminal composite layer 100 and the silicon terminal composite layer 200. The gate dielectric layer 9 and the gate conductive layer 10 are sequentially stacked along the Z-axis direction on the side of the silicon terminal composite layer 200 facing away from the hydrogen terminal composite layer 100.

[0089] refer to Fig.11 , Fig.11 An electronic device provided by the present invention is shown. The electronic device 500 may include a hydrogen silicon two-terminal device 300 and a peripheral circuit 400. The hydrogen silicon two-terminal device 300 is electrically connected to the peripheral circuit 400.

[0090] The hydrogen-silicon dual-terminal device 300 may be the aforementioned diamond-based hydrogen-silicon dual-terminal device. The first electrode 83, the second electrode 84 and the gate conductive layer 10 of the hydrogen-silicon dual-terminal device 300 may be electrically connected to the peripheral circuit respectively. The electronic device can achieve ultra-high power operation, can work effectively and achieve good heat dissipation, has reliable performance and a long service life.

[0091] The technical features of the embodiments disclosed above can be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0092] In the embodiments disclosed above, unless otherwise clearly specified and limited, the execution order of each step is not limited, for example, it can be executed in parallel, or it can be executed successively in different orders. The sub-steps of each step can also be executed alternately. The above-mentioned various forms of processes can be used, and steps can be reordered, added or deleted, as long as the desired results of the technical solution provided by the present invention can be achieved, and this document does not limit it here.

[0093] The embodiments disclosed above only express several implementation methods of the invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of patent protection of the invention. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the invention, and these all belong to the scope of patent protection required by the invention. Therefore, the scope of patent protection of the invention shall be subject to the attached claims.

Claims

1. A method for forming a diamond-based hydrogen-silicon double-terminal device, characterized in that include: forming a hydrogen-terminated conductive layer, a dielectric layer and a silicon-containing material layer sequentially stacked on a diamond substrate along a first direction; Forming a prefabricated diamond layer stacked on the side of the silicon-containing material layer facing away from the dielectric layer to obtain a diamond layer, and obtaining a silicon terminal conductive layer stacked between the diamond layer and the silicon-containing material layer; forming a first electrode extending along the first direction, and forming a second electrode extending along the first direction, wherein the second electrode is spaced apart from the first electrode, the first electrode is electrically connected to the hydrogen terminal conductive layer and the silicon terminal conductive layer, and the second electrode is electrically connected to the hydrogen terminal conductive layer and the silicon terminal conductive layer; forming a gate dielectric layer stacked on a side of the diamond layer facing away from the silicon terminal conductive layer; as well as A gate conductive layer is formed and stacked on a side of the gate dielectric layer facing away from the silicon terminal composite layer. The gate conductive layer is located between the first electrode and the second electrode.

2. The method for forming a diamond-based hydrogen-silicon double-terminal device according to claim 1, characterized in that The step of forming the first electrode includes: forming a first electrode hole penetrating the silicon terminal composite layer and extending through the hydrogen terminal conductive layer; and forming the first electrode filling the first electrode hole; The step of forming the second electrode includes: forming a second electrode hole penetrating the silicon-terminated composite layer and extending through the hydrogen-terminated conductive layer; and forming the second electrode filling the second electrode hole.

3. The method for forming a diamond-based hydrogen-silicon double-terminal device according to claim 1, characterized in that: The hydrogen-terminated conductive layer stacked on the diamond substrate is formed by a first microwave plasma chemical vapor deposition process, wherein the power of the first microwave plasma chemical vapor deposition process is 1500W to 3000W, the chamber pressure is 60Torr to 90Torr, the temperature is 700℃ to 800℃, the duration is 15min to 30min, and the hydrogen flow rate is 500sccm to 600sccm.

4. The method for forming a diamond-based hydrogen-silicon double-terminal device according to claim 1, characterized in that: The dielectric layer is formed by a first atomic layer deposition process, wherein the temperature of the first atomic layer deposition process is 100° C. to 500° C.; The silicon-containing material layer is formed by a plasma enhanced chemical vapor deposition process, wherein the temperature of the plasma enhanced chemical vapor deposition process is 200° C. to 400° C. and the deposition rate is 20 nm / min to 30 nm / min.

5. The method for forming a diamond-based hydrogen-silicon double-terminal device according to claim 1, characterized in that: The step of forming the diamond layer includes: epitaxially forming a prefabricated diamond layer through a second microwave plasma chemical vapor deposition process, the power of the second microwave plasma chemical vapor deposition process is 1500W to 5000W, the chamber pressure is 60Torr to 120Torr, the temperature is 700℃ to 900℃, the duration is 60min to 120min, the hydrogen flow rate is 500sccm to 600sccm, and the methane flow rate is 20sccm to 40sccm.

6. The method for forming a diamond-based hydrogen-silicon double-terminal device according to claim 1, characterized in that: Depositing to form the first electrode, and depositing to form the second electrode; The method for forming a diamond-based hydrogen-silicon dual-terminal device further comprises: annealing the first electrode and the second electrode to achieve ohmic contact, wherein the annealing temperature is 300° C. to 600° C.

7. The method for forming a diamond-based hydrogen-silicon double-terminal device according to claim 1, characterized in that: forming the gate dielectric layer by a second atomic layer deposition process, wherein the temperature of the second atomic layer deposition process is 200° C. to 400° C.; Using a patterned mask, a gate conductive layer is formed by an electron beam evaporation process; and The mask is removed.

8. A diamond-based hydrogen-silicon double-terminal device, characterized in that: include: A diamond substrate, a hydrogen terminal conductive layer, a dielectric layer, a silicon-containing material layer, a silicon terminal conductive layer, a diamond layer, a gate dielectric layer and a gate conductive layer sequentially stacked along a first direction; as well as a first electrode and a second electrode, the first electrode extending along the first direction and electrically connected to the hydrogen terminal conductive layer and the silicon terminal conductive layer, the second electrode extending along the first direction and electrically connected to the hydrogen terminal conductive layer and the silicon terminal conductive layer, the second electrode being spaced apart from the first electrode, Wherein, the gate conductive layer is located between the first electrode and the second electrode.

9. The diamond-based hydrogen-silicon double-terminal device according to claim 8, wherein: The first electrode and the second electrode respectively penetrate the diamond layer, the silicon terminal conductive layer, the silicon-containing material layer, the dielectric layer and extend through the hydrogen terminal conductive layer.

10. The diamond-based hydrogen-silicon double-terminal device according to claim 9, wherein: The thickness of the diamond substrate is 0.2 mm to 0.5 mm, the thickness of the dielectric layer is 20 nm to 100 nm, the thickness of the silicon-containing material layer is 20 nm to 200 nm, the thickness of the gate dielectric layer is 25 nm to 50 nm, the thickness of the gate conductive layer is 100 nm to 300 nm, the spacing between the gate conductive layer and the first electrode and the spacing between the gate conductive layer and the second electrode are respectively in the range of 0.5 μm to 3 μm, and the length of the gate conductive layer along the direction in which the first electrode and the second electrode are arranged is 0.1 μm to 0.5 μm.

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