Bonding device and bonding method

Abstract

The invention provides a bonding device and a bonding method, and the bonding device comprises a bonding head which is used for picking up a first element, the bonding head comprises a picking-up surface which is in contact with the first element and at least one piezoelectric module which is arranged in the bonding head, and the curvature of the picking-up surface is variable; the piezoelectric module deforms under the action of voltage and abuts against the pickup surface, so that the pickup surface deforms along with the piezoelectric module, and the curvature of the picked first element is adjusted through the pickup surface. According to the embodiment of the invention, the curvature of the pickup surface of the bonding head can be changed according to the curvature of the to-be-adsorbed chip or wafer, so that the yield of wafer bonding is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a bonding device and a bonding method. Background Art

[0002] In order to meet the needs of high integration and high performance, the chip structure is developing in a three-dimensional direction. In the field of semiconductor technology, chips are usually bonded to chips (or chips to wafers or wafers to wafers) to interconnect chips with high density and achieve system-level integration with smaller size, higher performance and lower power consumption. In the related art, in the process of picking up the object to be bonded by the bonding head, the object to be bonded usually cannot effectively fit the bonding head, and bubbles are formed between the object to be bonded and the bonding head; in addition, in the subsequent bonding process, the edges of the bonding wave are closed prematurely when they diffuse outward, resulting in bubbles between the object to be bonded and the target object, affecting the yield of chip bonding. Summary of the invention

[0003] The present application provides a bonding device and a bonding method, which can adjust the curvature of a bonding head pick-up surface so that the bonding head and a first element to be bonded are more closely fitted, thereby improving the yield of wafer bonding.

[0004] In order to solve the above-mentioned technical problems, the present application provides a bonding device on the one hand, including: a bonding head for picking up a first component, the bonding head including a picking surface in contact with the first component and at least one piezoelectric module arranged in the bonding head, and the curvature of the picking surface is variable; the piezoelectric module is deformed under the action of voltage and abuts against the picking surface, so that the picking surface follows the deformation of the piezoelectric module, and then the curvature of the picked up first component is adjusted by the picking surface.

[0005] In some embodiments, the length of the piezoelectric module along the pick-up direction of the bonding head can be adjusted under the action of the voltage to change the curvature of the pick-up surface.

[0006] In some embodiments, the bonding head includes: an adsorption cavity, which is disposed in the bonding head; and a driving cavity, which is located in the adsorption cavity and is disposed on the pick-up part, and the adsorption cavity is not connected to the driving cavity; the at least one piezoelectric module is accommodated in the driving cavity.

[0007] In some embodiments, the driving cavity includes: a bottom wall, which is arranged adjacent to the picking surface, and the at least one piezoelectric module abuts against the bottom wall, and the bottom wall abuts against the picking surface at least when a voltage is applied to the at least one piezoelectric module; and a surrounding wall, which surrounds the bottom wall to form a closed receiving space with the bottom wall, and the at least one piezoelectric module is received in the receiving space.

[0008] In some embodiments, the bottom wall is made of a flexible material, and when a voltage is applied to the at least one piezoelectric module, the bottom wall follows the deformation of the at least one piezoelectric module and deforms and abuts against the pickup surface to drive the pickup surface to deform.

[0009] In some embodiments, the bonding head is provided with a plurality of gas channels, and the gas channels are connected to the adsorption cavity so as to adsorb or release the first element through the gas channels; the gas channels are not connected to the driving cavity.

[0010] In some embodiments, when the first element is picked up by the bonding head and moved to align with the second element, no voltage is applied to the piezoelectric module, and the picking surface is in a first state; before the first element contacts the second element, a voltage is applied to the piezoelectric module, the picking surface switches from the first state to the second state, and the curvature of the picked up first element is adjusted by the picking surface; after the first element contacts the second element, the voltage applied to the piezoelectric module is adjusted, so that the picking surface switches from the second state to the first state, so that the first element is bonded to the second element; wherein the curvature of the picking surface in the second state is greater than the curvature of the picking surface in the first state.

[0011] In some embodiments, the curvature of the picking surface is 0 in the first state.

[0012] In some embodiments, the bonding device also includes: a power supply connected to the piezoelectric module, for applying a variable voltage to the piezoelectric module; a detector, for obtaining historical data of the bonding of the first element and the second element, or obtaining curvature parameters of the first element or the second element; and a controller, for adjusting the voltage applied to the piezoelectric module according to the historical data or the curvature parameters to change the deformation of the piezoelectric module, and then adjusting the curvature of the first element through the picking surface to compensate for the curvature of the second element.

[0013] In order to solve the above technical problems, the present application also provides a bonding method, including: providing a bonding head, the bonding head is used to pick up a first component, the bonding head includes a picking surface in contact with the first component and at least one piezoelectric module arranged in the bonding head, and the curvature of the picking surface is variable; the at least one piezoelectric module is deformed under the action of voltage and abuts against the picking surface, so that the picking surface follows the deformation of the at least one piezoelectric module, and then the curvature of the picked up first component is adjusted by the picking surface; the piezoelectric module does not apply voltage to make the picking surface in a first state, and the picking surface is adjusted by the picking surface. The bonding head picks up the first element and moves the first element to align with the second element; before the first element contacts the second element, a voltage is applied to the piezoelectric module, the picking surface is switched from a first state to a second state, and the curvature of the picked-up first element is adjusted by the picking surface; after the first element contacts the second element, the voltage applied to the piezoelectric module is adjusted, so that the picking surface is switched from the second state to the first state, so that the first element is bonded to the second element; wherein the curvature of the picking surface in the second state is greater than the curvature of the picking surface in the first state.

[0014] In some embodiments, the adjustment of the voltage applied to the piezoelectric module includes: obtaining historical data of the bonding between the first element and the second element, or obtaining curvature parameters of the first element or the second element; adjusting the voltage applied to the piezoelectric module according to the historical data or the curvature parameters to change the deformation of the piezoelectric module and then adjusting the curvature of the first element through the pickup surface to compensate for the curvature of the second element.

[0015] The bonding device provided in some embodiments of the present application includes: a bonding head for picking up a first component, the bonding head including a picking surface in contact with the first component and at least one piezoelectric module arranged in the bonding head, the curvature of the picking surface is variable; the piezoelectric module is deformed under the action of voltage and abuts against the picking surface, so that the picking surface follows the deformation of the piezoelectric module, and then the curvature of the picked up first component is adjusted by the picking surface. Therefore, the curvature of the picking surface of the bonding head can be adaptively changed according to the shape of the first component to be adsorbed, so as to improve the fit between the first component and the bonding head and reduce the possibility of bubbles between the first component and the bonding head; and in the bonding process of the first component to the second component, the first component is bonded to the second component flatly, thereby improving the yield of wafer bonding. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work. Among them:

[0017] Figure 1 A schematic structural diagram of a pick-up surface of a bonding device provided in some embodiments of the present application in a first state;

[0018] Figure 2 A schematic diagram of a structure in which a pick-up surface of a bonding device provided in some embodiments of the present application is in a second state;

[0019] Figure 3 A partial structural block diagram of a highly bonded device is provided for some embodiments of the present application;

[0020] Figure 4 A flowchart of a bonding method provided for some embodiments of the present application. DETAILED DESCRIPTION

[0021] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0022] The terms "first" and "second" in this application are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of this application, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0023] All directional indications in the embodiments of the present application (such as up, down, left, right, front, back, top, bottom...) are only used to explain the relative position relationship, movement status, etc. between the components in a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0024] In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device comprising a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products or devices.

[0025] Unless otherwise defined, the term “substantially” mentioned in this application, with respect to numerical quantities or quantitative relationships, can be understood as a range of approximately ±15% of a certain numerical value.

[0026] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0027] In the related art, when bonding an object to be bonded (such as a chip or a wafer) to a target object (such as a chip or a wafer), the object to be bonded needs to be driven by a bonding head, so that the object to be bonded and the target object are first point-contacted to achieve bonding, and then the bonding wave is diffused to the entire bonding surface, and finally the bonding of the object to be bonded to the target object is completed. However, in the related art, in the process of picking up the object to be bonded by the bonding head, since the curvature of the bonding head is fixed, but the actual curvature and shape of the object to be bonded are different, the object to be bonded is usually unable to effectively fit the bonding head, and bubbles are formed between the object to be bonded and the target object. In addition, in the subsequent bonding process, the edge may be closed in advance when the bonding wave diffuses outward, resulting in bubbles being easily formed between the object to be bonded and the target object, thereby affecting the subsequent bonding yield of the object to be bonded to the target object.

[0028] In order to solve the above technical problems, the present application provides a bonding device 100, see Figure 1-Figure 2 , Figure 1 A schematic structural diagram of a pick-up surface of a bonding device provided in some embodiments of the present application in a first state; Figure 2 A schematic diagram of a structure in which the pick-up surface of a bonding device provided in some embodiments of the present application is in a second state. Figure 1-Figure 2The bonding device 100 generally includes a bonding head 110 and at least one piezoelectric module 120. The bonding head 110 is used to pick up a first component (not shown). The bonding head 110 can also move the first component to a second component (not shown), and then bond the first component to the second component, for example, to a target area of ​​the second component. In some embodiments, the first component is a chip to be bonded or a top wafer, and the second component is a chip to be bonded or a bottom wafer.

[0029] The bonding head 110 includes a pick-up portion 111, and the pick-up portion 111 includes a pick-up surface 1111 for picking up a first component. The pick-up surface 1111 can contact the first component when the bonding head 110 picks up the first component. The curvature of the pick-up surface 1111 can be variable, and the curvature of the first component picked up by the pick-up surface 1111 can change with the curvature of the pick-up surface 1111, thereby improving the fit between the bonding head 110 and the first component.

[0030] In some embodiments, the bonding head 110 can absorb the first component by vacuum absorption. Of course, in other embodiments, the bonding head 110 can also pick up the first component by electromagnetic absorption or other methods.

[0031] The piezoelectric module 120 is disposed in the bonding head 110. The piezoelectric module 120 can be deformed under the action of voltage and abut against the pick-up surface 1111. The pick-up surface 1111 deforms following the piezoelectric module 120, thereby changing the curvature of the pick-up surface 1111, and adjusting the curvature of the first element picked up by the bonding head 110 through the pick-up surface 1111. In this way, the curvature of the pick-up surface 1111 can be adaptively adjusted by the piezoelectric module 120 according to the shape of the first element, thereby improving the fit between the pick-up surface 1111 of the bonding head 110 and the first element, reducing the possibility of bubbles generated between the first element and the bonding head 110 during the bonding process, and allowing the first element to be bonded flatly to the second element, thereby improving the yield of the bonding between the first element and the second element. Compared with connection, abutment emphasizes the existence of force between the two. For example, the piezoelectric module abuts against the pick-up surface, which means that in addition to the conventional gravity and its reaction force between the piezoelectric module and the pick-up surface, the piezoelectric module also applies additional pressure to the pick-up surface.

[0032] In some embodiments, the pickup portion 111 is made of a flexible material so that when the piezoelectric module 120 is deformed under the action of a voltage, the pickup portion 111 is more likely to deform at a position corresponding to the piezoelectric module 120. The pickup surface 1111 includes a first state and a second state, and the curvature of the pickup surface 1111 in the second state is greater than the curvature of the pickup surface 1111 in the first state.

[0033] In some embodiments, when no voltage is applied to the piezoelectric module 120, that is, when the voltage across the piezoelectric module 120 is 0, the pickup surface 1111 is in the first state (see Figure 1 ), at this time, the curvature of the picking surface 1111 is small, so as to increase the contact area between the picking surface 1111 and the first element during the picking process of the first element. At this time, the piezoelectric module 120 does not deform under the action of the voltage, and can be connected or not connected to the picking portion 111. When the picking surface 1111 is in the first state, the first element is picked up by the picking surface 1111. In some embodiments, when the picking surface 1111 is in the first state, the curvature of the picking surface 1111 can be 0. At this time, the picking surface 1111 is a plane, so as to increase the contact area between the picking surface 1111 and the first element and improve the picking stability of the first element. Of course, in other embodiments, when the picking surface 1111 is in the first state, its curvature can also be greater than 0, and the present application does not make specific limitations on this.

[0034] Subsequently, the bonding head 110 may move the first element to align with the second element. Before the first element contacts the second element, a voltage may be applied to the piezoelectric module 120 to switch the pick-up surface 1111 from the first state to the second state (see Figure 2 ), and adjusts the curvature of the picked-up first element through the pick-up surface 1111, thereby ensuring the fit between the first element and the pick-up surface 1111 and reducing the possibility of bubbles between the first element and the pick-up surface 1111. Before the first element contacts the second element, the bonding device 100 can detect the shape or curvature of the first element through elements such as a camera, and then adjust the voltage of the piezoelectric module 120 according to the shape or curvature of the first element, thereby changing the curvature of the pick-up surface 1111. It can be understood that when the local curvature of the pick-up surface 1111 is 0, the part of the pick-up surface 1111 is a plane; when the local curvature of the pick-up surface 1111 is greater than 0, the part of the pick-up surface 1111 is a curved surface, and the part of the pick-up surface 1111 can be convex toward the direction close to the second element or concave toward the direction away from the second element, and the curvature of the local area of ​​the piezoelectric module 120 corresponding to the first element picked up by the bonding head 110 is adjusted to be convex toward the direction close to the second element or concave toward the direction away from the second element through the pick-up surface 1111. In some embodiments, the bonding device 100 can also adjust the voltage of the piezoelectric module 120 according to the historical data of the bonding between the first element and the second element, such as bubble defects, so as to change the curvature of the first element, thereby compensating for the curvature of the second element. In some embodiments, before the first element contacts the second element, the bonding device 100 can further detect the curvature parameters of the first element or the second element, and adjust the voltage of the piezoelectric module 120 when the actual size of the first element or the second element is different from the preset size to change the curvature of the first element, thereby compensating for the curvature of the second element and reducing the bonding error.

[0035] After the first element contacts the second element (e.g., point contact), the voltage applied to the piezoelectric module 120 is adjusted to gradually reduce the curvature of the pick-up surface 1111, so that the pick-up surface 1111 switches from the second state to the first state, and at the same time, the bonding wave of the first element bonded to the second element gradually spreads to the entire bonding surface, and finally completes the bonding of the first element to the second element. Since the curvature of the pick-up surface 1111 gradually decreases during the bonding process of the first element and the second element, the first element can be bonded to the second element flatly, reducing the possibility of bubbles generated between the bonding interface of the first element and the second element, thereby improving the yield of the bonded product.

[0036] In some embodiments, in order to improve the stability of the pickup portion 111 in adsorbing the first component, the area of ​​the pickup surface 1111 is larger than the area of ​​the first component.

[0037] In some embodiments, the length of the piezoelectric module 120 along the picking direction of the bond head 110 can be adjusted under the action of voltage, thereby changing the curvature of the picking surface 1111. The picking direction of the bond head 110 refers to the direction in which the bond head 110 picks up the first component, or the direction in which the bond head 110 moves toward the first component when picking up the first component.

[0038] like Figure 1 and Figure 2 As shown, in some embodiments, the bonding device 100 is provided with 3 piezoelectric modules 120; in other embodiments, the bonding device 100 may also be provided with other numbers of piezoelectric modules 120, for example, the number of piezoelectric modules 120 provided in the bonding device 100 is 1, 2, 4 or 5. In some embodiments, the piezoelectric module 120 may be provided corresponding to the position where the curvature of the first element changes, so as to more accurately adjust the curvature of the pick-up surface 1111 so that the first element is more closely attached to the pick-up surface 1111. In some embodiments, the shape of the piezoelectric module 120 in the direction in which the bonding head 110 picks up the first element is a rectangle; in other embodiments, the piezoelectric module 120 may also be provided with other shapes. In some embodiments, the voltage applied to both ends of the piezoelectric module 120 may be changed by setting a software program to cause the piezoelectric module 120 to deform.

[0039] Continue to see Figure 1 and Figure 2In some embodiments, the bonding head 110 further includes an adsorption cavity 112 and a driving cavity 113 disposed in the adsorption cavity 112. The adsorption cavity 112 is disposed in the bonding head 110. The adsorption cavity 112 can be connected to the pickup portion 111 so that the bonding head 110 picks up the first component by adsorption. The driving cavity 113 is located in the adsorption cavity 112. In one embodiment, the driving cavity 113 is disposed on the side of the pickup portion 111 away from the pickup surface 1111. At least one piezoelectric module 120 is accommodated in the driving cavity 113, and the driving cavity 113 and the adsorption cavity 112 are not connected to each other, so that the deformation drive that drives the piezoelectric module 120 to deform and the adsorption drive that the bonding head 110 adsorbs the first component do not interfere with each other, so that the deformation drive and the adsorption drive are more stable, and the accuracy of the deformation control of the piezoelectric module 120 is improved, thereby improving the bonding yield. It is understandable that those skilled in the art may dispose the driving cavity 113 outside the adsorption cavity 112 as needed.

[0040] In some embodiments, the bonding head 110 is provided with a plurality of gas channels 1112, and the plurality of gas channels 1112 are connected to the adsorption chamber 112 to adsorb or release the first element through the plurality of gas channels 1112. The plurality of gas channels 1112 are not connected to the driving chamber 113. In some embodiments, the plurality of gas channels 1112 can be provided on the pickup portion 111. The bonding head 110 is further provided with a vacuum line 114 on the side of the adsorption chamber 112 away from the pickup portion 111, and the vacuum line 114 is connected to the adsorption chamber 112, and further connected to the gas channel 1112, so as to provide the bonding head 110 with a pickup power.

[0041] Continue to see Figure 1 and Figure 2In some embodiments, the driving cavity 113 includes a bottom wall 1131 and a surrounding wall 1132. The bottom wall 1131 is disposed adjacent to the pickup surface 1111, that is, the bottom wall 1131 is disposed on the side of the driving cavity 113 close to the pickup surface 1111. At least one piezoelectric module 120 abuts against the bottom wall 1131. The bottom wall 1131 abuts against the pickup surface 1111 at least when a voltage is applied to at least one piezoelectric module 120; for example, the bottom wall 1131 may abut against the pickup surface 1111 only when a voltage is applied to the piezoelectric module 120, and be spaced apart from the pickup surface 1111 when no voltage is applied to the piezoelectric module 120; for another example, the bottom wall 1131 may abut against the pickup surface 1111 both when a voltage is applied to the piezoelectric module 120 and when no voltage is applied to the piezoelectric module 120, which is not specifically limited in the present application. In some embodiments, the bottom wall 1131 is made of a flexible material. When the piezoelectric module 120 is deformed under the action of voltage, the bottom wall 1131 follows the piezoelectric module 120 to deform in the direction of the pickup surface 1111 and abuts against the pickup surface 1111, so as to drive the pickup portion 111 to follow the deformation of the bottom wall 1131, thereby changing the curvature of the pickup surface 1111.

[0042] The surrounding wall 1132 surrounds the bottom wall 1131, so that the surrounding wall 1132 and the bottom wall 1131 form a closed receiving space, and at least one piezoelectric module 120 is received in the receiving space. By setting the surrounding wall 1132 and the bottom wall 1131, a closed receiving space can be formed, thereby isolating the adsorption cavity 112 and the driving cavity 113 from each other and not communicating with each other.

[0043] Figure 3 A partial structural block diagram of a highly bonded device is provided for some embodiments of the present application. Figure 3 In some embodiments, the bonding device 100 further includes a power supply 130, a detector 140 and a controller 150. The power supply 130 is electrically connected to the piezoelectric module 120, and is used to apply a variable voltage to the piezoelectric module 120, thereby causing the piezoelectric module 120 to deform. The detector 140 obtains historical data of the bonding between the first element and the second element, or obtains curvature parameters of the first element or the second element. The detector can also further obtain the shape, size, etc. of the first element and the second element. The controller 150 is electrically connected to the detector 140 and the power supply, and is used to adjust the voltage applied to the piezoelectric module 120 according to the historical data or curvature parameters to change the deformation of the piezoelectric module 120, and then adjust the curvature of the first element through the pick-up surface 1111 to compensate for the curvature of the second element.

[0044] In order to solve the above technical problems, the present application also provides a bonding method, see Figure 4 , Figure 4A flow chart of a bonding method provided in some embodiments of the present application. The bonding method adopts any of the above-mentioned bonding devices 100. The bonding method includes the following steps.

[0045] Step S1: Provide a bonding head, wherein the bonding head is used to pick up a first component, the bonding head includes a picking surface in contact with the first component and at least one piezoelectric module arranged in the bonding head, and the curvature of the picking surface is variable; the at least one piezoelectric module is deformed under the action of voltage and abuts against the picking surface, so that the picking surface follows the deformation of the at least one piezoelectric module, and then the curvature of the picked up first component is adjusted through the picking surface.

[0046] See for example Figure 1 , the bonding head 110 includes a pick-up surface 1111 in contact with the first element, and at least one piezoelectric module 120 is disposed in the bonding head 110. The curvature of the pick-up surface 1111 is variable. At least one piezoelectric module 120 is deformed under the action of voltage and abuts against the pick-up surface 1111, so that the pick-up surface 1111 follows the deformation of at least one piezoelectric module 120, and then the curvature of the picked-up first element is adjusted by the pick-up surface 1111. In some embodiments, before the pick-up portion 111 of the bonding device 100 picks up the first element, the voltage applied to both sides of the piezoelectric module 120 is controlled to be 0, and the pick-up surface 1111 is in a first state of a planar state with a curvature of 0, and then the first element is picked up by adsorption through the pick-up surface 1111.

[0047] Step S2: the piezoelectric module does not apply voltage to make the pickup surface in a first state, pick up the first component through the bonding head and move the first component to align with the second component.

[0048] In some embodiments, before the pick-up portion 111 of the bonding device 100 picks up the first element, the voltage applied to both sides of the piezoelectric module 120 is controlled to be 0, that is, no voltage is applied to the piezoelectric module 120; at this time, the pick-up surface 1111 is in the first state, and then the first element is picked up by the pick-up surface 1111. Subsequently, the bonding head 110 can move the first element to the second element and align it with the second element. At the same time, the voltage applied to both ends of the piezoelectric module 120 can be changed during the movement of the first element by the bonding head 110, so that the piezoelectric module 120 is deformed in the direction in which the bonding head 110 adsorbs the first element, thereby causing the pick-up surface 1111 to deform until the pick-up surface 1111 switches from the first state to the second state, at which time the first element is attached to the pick-up surface 1111.

[0049] Step S3: before the first element contacts the second element, a voltage is applied to the piezoelectric module, the pickup surface is switched from a first state to a second state, and the curvature of the picked-up first element is adjusted by the pickup surface.

[0050] Before the first element contacts the second element, a voltage may be applied to the piezoelectric module 120, so that the piezoelectric module 120 is deformed in the direction in which the bonding head 110 adsorbs the first element, thereby deforming the pick-up surface 1111, and thus the curvature of the picked-up first element may be adjusted through the pick-up surface 1111. When the pick-up surface 1111 switches from the first state to the second state, the first element is attached to the pick-up surface 1111. Step S4: After the first element contacts the second element, the voltage applied to the piezoelectric module is adjusted to switch the pick-up surface from the second state to the first state, so that the first element is bonded to the second element.

[0051] The bonding head 110 can then be moved downward to bring the first element closer to the second element until the first element and the second element form contact, such as point contact. After the first element and the second element are in contact, the voltage applied to the piezoelectric module 120 is adjusted so that the deformation of the piezoelectric module 120 relative to the initial state gradually decreases, thereby gradually reducing the curvature of the pickup surface 1111, and the pickup surface 1111 switches from the second state to the first state. At the same time, the bonding wave generated by the bonding of the first element to the second element gradually spreads from the middle contact point to the edge until the bonding of the first element to the second element is completed.

[0052] In some embodiments, before the first element and the second element come into contact, the detector may be used to obtain historical data of the bonding between the first element and the second element, or to obtain the curvature parameters of the first element or the second element.

[0053] The voltage applied to the piezoelectric module 120 is adjusted according to the historical data or the curvature parameter to change the deformation amount of the piezoelectric module 120, and then the curvature of the first element is adjusted through the pickup surface 1111 to compensate for the curvature of the second element.

[0054] In some embodiments of the present application, at least one piezoelectric module 120 is provided in the bonding head 110, so that the pickup portion 111 follows the deformation of the at least one piezoelectric module 120, thereby changing the curvature of the pickup surface 1111 and the first element picked up. Therefore, the curvature of the pickup surface 1111 of the bonding head 110 can be adaptively changed according to the shape of the first element to be adsorbed, so as to improve the fit between the first element and the bonding head 110, reduce the possibility of bubbles between the first element and the bonding head 110; and in the bonding process of the first element to the second element, the first element is bonded to the second element flatly, thereby improving the yield of wafer bonding.

[0055] The above are only implementation methods of the present application, and are not intended to limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A bonding device, characterized in that: include: A bonding head, used for picking up a first component, the bonding head comprising a picking surface in contact with the first component and at least one piezoelectric module arranged in the bonding head, the picking surface having a variable curvature; The piezoelectric module is deformed under the action of voltage and abuts against the pickup surface, so that the pickup surface is deformed following the piezoelectric module, and the curvature of the first element picked up is adjusted by the pickup surface.

2. The bonding device according to claim 1, characterized in that The length of the piezoelectric module along the picking direction of the bonding head can be adjusted under the action of the voltage to change the curvature of the picking surface.

3. The bonding device according to claim 1, characterized in that The bonding head comprises: an adsorption cavity, disposed on the bonding head; and A driving cavity is located in the adsorption cavity, and the adsorption cavity is not connected with the driving cavity; The at least one piezoelectric module is accommodated in the driving cavity.

4. The bonding device according to claim 3, characterized in that: The driving cavity comprises: a bottom wall disposed adjacent to the pickup surface, the at least one piezoelectric module abutting against the bottom wall, and the bottom wall abutting against the pickup surface at least when a voltage is applied to the at least one piezoelectric module; and The surrounding wall surrounds the bottom wall to form a closed receiving space with the bottom wall, and the at least one piezoelectric module is received in the receiving space.

5. The bonding device according to claim 4, characterized in that: The bottom wall is made of a flexible material. When a voltage is applied to the at least one piezoelectric module, the bottom wall follows the deformation of the at least one piezoelectric module and deforms and abuts against the pickup surface to drive the pickup surface to deform.

6. The bonding device according to claim 4, characterized in that: The bonding head is provided with a plurality of gas channels, and the gas channels are connected with the adsorption chamber so as to adsorb or release the first element through the gas channels; The gas channel is not connected to the driving cavity.

7. The bonding device according to claim 1, characterized in that: When the first component is picked up by the bonding head and the first component is moved to align with the second component, no voltage is applied to the piezoelectric module and the pick-up surface is in a first state; Before the first element contacts the second element, a voltage is applied to the piezoelectric module, the pickup surface is switched from a first state to a second state, and the curvature of the picked-up first element is adjusted by the pickup surface; After the first element contacts the second element, adjusting the voltage applied to the piezoelectric module to switch the pickup surface from the second state to the first state so that the first element is bonded to the second element; Wherein, the curvature of the picking surface in the second state is greater than the curvature of the picking surface in the first state.

8. The bonding device according to claim 7, characterized in that: The curvature of the picking surface is 0 in the first state.

9. The bonding device according to claim 7, characterized in that: The bonding device further comprises: A power supply, connected to the piezoelectric module, for applying a variable voltage to the piezoelectric module; A detector, used to obtain historical data of bonding between the first element and the second element, or to obtain a curvature parameter of the first element or the second element; and A controller adjusts the voltage applied to the piezoelectric module according to the historical data or the curvature parameter to change the deformation of the piezoelectric module, thereby adjusting the curvature of the first element through the pickup surface to compensate for the curvature of the second element.

10. A bonding method, characterized in that: include: A bonding head is provided, the bonding head is used to pick up a first component, the bonding head comprises a picking surface in contact with the first component and at least one piezoelectric module arranged in the bonding head, the curvature of the picking surface is variable; the at least one piezoelectric module is deformed under the action of voltage and abuts against the picking surface, so that the picking surface is deformed following the at least one piezoelectric module, and the curvature of the picked up first component is adjusted by the picking surface; The piezoelectric module does not apply voltage to make the pickup surface in a first state, and the first component is picked up by the bonding head and moved to align with the second component; Before the first element contacts the second element, a voltage is applied to the piezoelectric module, the pickup surface is switched from a first state to a second state, and the curvature of the picked-up first element is adjusted by the pickup surface; After the first element contacts the second element, adjusting the voltage applied to the piezoelectric module to switch the pickup surface from the second state to the first state so that the first element is bonded to the second element; Wherein, the curvature of the picking surface in the second state is greater than the curvature of the picking surface in the first state.

11. The bonding method according to claim 10, characterized in that: The adjusting the voltage applied to the piezoelectric module comprises: Acquire historical data of bonding between the first element and the second element, or acquire curvature parameters of the first element or the second element; The voltage applied to the piezoelectric module is adjusted according to the historical data or the curvature parameter to change the deformation amount of the piezoelectric module and then adjust the curvature of the first element through the pickup surface to compensate for the curvature of the second element.

Images