Stacked photoelectric coupler and manufacturing method thereof
By adopting a stacked structure and connecting layer method in the optocoupler, the challenges of existing optocouplers in miniaturization and high integration are solved, achieving higher optical transmission efficiency and more stable operating parameters.
Patent Information
- Application Number
- CN202411831689.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-12
- Publication Date
- 2025-03-18
- Estimated Expiration
- Not applicable · inactive patent
AI Technical Summary
Existing optocouplers have challenges in miniaturization and high integration, and have low optical transmission efficiency and unstable parameters.
Using a stacked structure, a connecting layer is formed through the pads on the substrate, the light receiving chip, the isolation layer and the light emitting chip are bonded in sequence, and electrically connected with the bonded wire, thereby realizing the stacked manufacturing method of the photoelectric coupler.
It achieves a smaller size and higher optical transmission efficiency, and has more stable operating parameters, meeting the needs of miniaturization and high integration.
Smart Images

Figure CN119650557A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of photoelectric couplers, and in particular to a stacked photoelectric coupler and a manufacturing method thereof. Background Art
[0002] With the continuous improvement of the requirements for miniaturization and micro-miniaturization of electronic components in recent years, people have an increasing demand for miniaturized and highly integrated devices. As an electro-optical-electrical conversion device, the photocoupler has good anti-electromagnetic interference and electrical insulation capabilities, so it is widely used in communications, power, industrial control and other fields. Photocouplers can be divided into a beam-type structure and a reflective structure according to the structure. The beam-type structure is to place the light source transmitting chip and the light receiving chip face to face to achieve the transmission and reception of optical signals. Its isolation voltage control can be achieved by increasing the distance between the two chips or placing an isolation material between the chips. The reflective structure is to stick the light source transmitting chip and the light receiving chip on the same plane, and achieve the purpose of optical signal reception by coating the light guide glue on the chip surface. Due to the need to achieve a higher isolation voltage, the size of the device is often limited, and it is difficult to develop in the direction of miniaturization. In the related art, the photocoupler is mainly a device-type structure, which is not only large in size, but also has low light transmission efficiency and unstable parameters.
[0003] Therefore, how to provide a stacked optocoupler with high integration and high light transmission efficiency is a problem that needs to be solved urgently. Summary of the invention
[0004] In view of the above-mentioned shortcomings of the prior art, the present invention provides a stacked optocoupler and a manufacturing method thereof to solve at least one of the above-mentioned technical problems.
[0005] In order to achieve the above-mentioned purpose and other related purposes, the technical solution provided by this application is as follows.
[0006] In a first aspect, the present application provides a method for manufacturing a stacked optocoupler, comprising:
[0007] Providing a substrate, the substrate comprising a front side and a back side arranged opposite to each other, and a plurality of pads are arranged on the front side of the substrate;
[0008] forming a first connection layer between a plurality of pads of the substrate;
[0009] A light receiving chip is arranged on a side of the first connecting layer away from the substrate, so as to adhere the light receiving chip and the substrate through the first connecting layer;
[0010] forming a second connection layer in a light receiving region of the light receiving chip on a side away from the substrate;
[0011] forming an isolation layer and a third connection layer in sequence on a side of the second connection layer facing away from the substrate;
[0012] Arranging a light emitting chip on a side of the third connection layer away from the substrate, and adhering the isolation layer and the light emitting chip through the third connection layer;
[0013] The light receiving chip and the substrate are electrically connected based on bonding wires, and the light emitting chip and the substrate are electrically connected to obtain a stacked optocoupler.
[0014] In one embodiment of the present invention, before forming the first connection layer between the plurality of pads of the substrate, the method further includes:
[0015] A fourth connection layer is formed on the front surface of the substrate, and a function chip is arranged on a side of the fourth connection layer away from the substrate, wherein the function chip is used to process the light receiving signal of the light receiving chip.
[0016] In one embodiment of the present invention, the method further includes: electrically connecting the pads on the optical receiving chip and the pads on the functional chip based on the bonding wire, and electrically connecting the pads on the functional chip and the pads on the substrate based on the bonding wire, so as to realize electrical connection between the optical receiving chip and the substrate.
[0017] In one embodiment of the present invention, a light emitting chip is arranged on a side of the third connection layer away from the substrate, including: acquiring an electrical signal output by the functional chip; adjusting the position of the light emitting chip according to the electrical signal until the electrical signal meets a preset signal threshold so that the light emitting chip is located at a target position.
[0018] In one embodiment of the present invention, the first connecting layer is one of conductive glue, gold-tin solder, and epoxy resin glue; the second connecting layer and the third connecting layer are adhesives whose transmittance meets the first preset transmittance threshold, and the second connecting layer and the third connecting layer are one of epoxy resin glue, silicone, and photosensitive glue; the isolation layer is an insulating material whose transmittance meets the second preset transmittance threshold.
[0019] In a second aspect, the present application also provides a method for manufacturing a stacked optocoupler, comprising:
[0020] Providing a substrate, the substrate comprising a front side and a back side arranged opposite to each other, and a plurality of pads are arranged on the front side of the substrate;
[0021] forming a first connection layer between a plurality of pads of the substrate;
[0022] A light receiving integrated structure is arranged on a side of the first connecting layer away from the substrate, so as to adhere the light receiving integrated structure to the substrate through the first connecting layer, wherein the light receiving integrated structure is an integrated structure of a light receiving chip and an isolation layer;
[0023] forming a third connection layer on a side of the light receiving integrated structure away from the substrate;
[0024] A light emitting chip is arranged on a side of the third connecting layer away from the substrate, so that the isolation layer and the light emitting chip are adhered to each other through the third connecting layer;
[0025] The light receiving chip and the substrate are electrically connected based on bonding wires, and the light emitting chip and the substrate are electrically connected to obtain a stacked optocoupler.
[0026] In one embodiment of the present invention, the method for obtaining the light receiving integrated structure includes: coating the isolation layer on the light receiving side of the light receiving chip by thin film deposition to form the light receiving integrated structure.
[0027] In a third aspect, the present application further provides a stacked optocoupler, comprising:
[0028] A substrate including a front surface and a back surface disposed opposite to each other;
[0029] A light receiving chip is arranged on the front side of the substrate, and the light receiving chip is adhered to the substrate via a first connecting layer;
[0030] An isolation layer, which is arranged on a side of the light receiving chip away from the substrate, and the isolation layer and the light receiving chip are adhered to each other through a second connection layer;
[0031] A light emitting chip is disposed on a side of the isolation layer away from the substrate, and the light emitting chip and the isolation layer are adhered to each other via a third connection layer;
[0032] The bonding wire is used to connect the pad on the light receiving chip with the pad on the substrate, and to connect the pad on the light emitting chip with the pad on the substrate.
[0033] In a fourth aspect, the present application further provides a stacked optocoupler, comprising:
[0034] A substrate including a front surface and a back surface disposed opposite to each other;
[0035] A light receiving chip is arranged on the front side of the substrate, and the light receiving chip is adhered to the substrate via a first connecting layer;
[0036] An isolation layer, which is arranged on a side of the light receiving chip away from the substrate, and the isolation layer and the light receiving chip are adhered to each other through a second connection layer;
[0037] A light emitting chip is disposed on a side of the isolation layer away from the substrate, and the light emitting chip and the isolation layer are adhered to each other via a third connection layer;
[0038] The bonding wire is used to connect the pad on the light receiving chip with the pad on the substrate, so as to connect the pad on the light emitting chip with the pad on the substrate.
[0039] In a fifth aspect, the present application further provides a stacked optocoupler, comprising: a substrate, comprising a front surface and a back surface arranged opposite to each other;
[0040] A functional chip is arranged on the front side of the substrate, and the functional chip is adhered to the substrate via a fourth connecting layer;
[0041] A light receiving chip, which is arranged on a side of the function chip away from the substrate, and the light receiving chip is adhered to the function chip via a first connection layer;
[0042] A composite layer, which is arranged on a side of the light receiving chip away from the substrate, wherein the composite layer is composed of the second connecting layer, the isolation layer and the third connecting layer or the isolation layer and the third connecting layer;
[0043] A light emitting chip, which is arranged on a side of the composite layer away from the substrate;
[0044] Bonding wires are used to connect the pads on the light receiving chip with the pads on the substrate, to connect the pads on the light emitting chip with the pads on the substrate, and to electrically connect the pads on the functional chip with the pads on the substrate.
[0045] The present application provides a stacked photoelectric coupler and a manufacturing method thereof, the method comprising: forming a light receiving chip, an isolation layer and a light emitting chip in sequence on a provided substrate, connecting the substrate and the light receiving chip through a first connection layer, connecting the isolation layer and the light receiving chip through a second connection layer, and connecting the light emitting chip through a third connection layer to form a stacked photoelectric coupler. The stacked photoelectric coupler provided by the present application not only has a simple manufacturing method, but also has a smaller volume, improves the light transmission efficiency of the coupling product, and has more stable output parameters during operation.
[0046] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention. BRIEF DESCRIPTION OF THE DRAWINGS
[0047] The drawings herein are incorporated into the specification and constitute a part of the specification, showing embodiments consistent with the present invention, and together with the specification, are used to explain the principles of the present invention. Obviously, the drawings described below are only some embodiments of the present invention, and for those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative work. In the drawings:
[0048] Figure 1 A flowchart of a method for manufacturing a stacked optocoupler is shown as an exemplary embodiment of the present invention;
[0049] Figure 2 A schematic diagram of a stacked optocoupler is shown as an exemplary embodiment of the present invention;
[0050] Figure 3 A schematic diagram showing a stacked optocoupler including a functional chip according to an exemplary embodiment of the present invention;
[0051] Figure 4 A flowchart of a method for manufacturing a stacked optocoupler corresponding to an integrated structure of an isolation layer and a light receiving chip according to another exemplary embodiment of the present invention;
[0052] Figure 5 A schematic diagram of a stacked photoelectric coupler corresponding to an integrated structure of an isolation layer and a light receiving chip according to another exemplary embodiment of the present invention;
[0053] Figure 6 A schematic diagram showing a stacked optocoupler including a functional chip and a composite layer as another exemplary embodiment of the present invention;
[0054] Explanation of the figure markings: 1-substrate; 2-first connection layer; 3-light receiving chip; 4-second connection layer; 5-isolation layer; 6-third connection layer; 7-light emitting chip; 8-bonding wire; 9-pad; 10-fourth connection layer, 11-functional chip, 12-light receiving integrated structure; 13-composite layer. DETAILED DESCRIPTION
[0055] The following will describe the embodiments of the present invention with reference to the accompanying drawings and preferred embodiments. Those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention. It should be understood that the preferred embodiments are only for illustrating the present invention, not for limiting the scope of protection of the present invention.
[0056] It should be noted that the illustrations provided in the following embodiments are only used to illustrate the basic concept of the present invention in a schematic manner, and thus the illustrations only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.
[0057] In the following description, numerous details are discussed to provide a more thorough explanation of the embodiments of the present invention. However, it is obvious to those skilled in the art that the embodiments of the present invention can be implemented without these specific details. In other embodiments, well-known structures and devices are shown in the form of block diagrams rather than in detail to avoid making the embodiments of the present invention difficult to understand.
[0058] UV glue (also known as shadowless glue or photosensitive glue) is an adhesive that must be cured by ultraviolet light.
[0059] With the continuous improvement of the requirements for miniaturization and micro-miniaturization of electronic components in recent years, people have an increasing demand for miniaturized and highly integrated devices. As an electro-optical-electrical conversion device, the photocoupler has good anti-electromagnetic interference and electrical insulation capabilities, so it is widely used in communications, power, industrial control and other fields. Photocouplers can be divided into a beam-type structure and a reflective structure according to the structure. The beam-type structure is to place the light source transmitting chip and the light receiving chip face to face to achieve the transmission and reception of optical signals. Its isolation voltage control can be achieved by increasing the distance between the two chips or placing an isolation material between the chips. The reflective structure is to stick the light source transmitting chip and the light receiving chip on the same plane, and achieve the purpose of optical signal reception by coating the light guide glue on the chip surface. Due to the need to achieve a higher isolation voltage, the size of the device is often limited, and it is difficult to develop in the direction of miniaturization. In the related art, the photocoupler is mainly a device-type structure, which is not only large in size, but also has low light transmission efficiency and unstable parameters.
[0060] First, as Figure 1 As shown, the present application provides a method for manufacturing a stacked optocoupler, the manufacturing method at least comprising steps S101 to S107.
[0061] S101, providing a substrate 1, wherein the substrate 1 comprises a front side and a back side which are arranged opposite to each other, and a plurality of pads 9 are arranged on the front side of the substrate 1;
[0062] S102, forming a first connection layer 2 between a plurality of pads 9 on the substrate 1;
[0063] S103, arranging a light receiving chip 3 on a side of the first connection layer 2 facing away from the substrate 1, so as to adhere the light receiving chip 3 and the substrate 1 through the first connection layer 2;
[0064] S104, forming a second connection layer 4 in the light receiving area of the light receiving chip 3 on the side facing away from the substrate 1;
[0065] S105, forming an isolation layer 5 and a third connection layer 6 in sequence on a side of the second connection layer 4 facing away from the substrate 1;
[0066] S106, arranging the light emitting chip 7 on the side of the third connecting layer 6 facing away from the substrate 1, so as to adhere the isolation layer 5 and the light emitting chip 7 through the third connecting layer 6;
[0067] S107 , electrically connecting the light receiving chip 3 and the substrate 1 , and electrically connecting the light emitting chip 7 and the substrate 1 based on the bonding wire 8 , to obtain a stacked optocoupler.
[0068] Specifically, combined Figure 2 As shown, a substrate 1 is provided, a first connection layer 2 is applied between a plurality of pads 9 of the substrate 1, a light receiving chip 3 is arranged on the side of the first connection layer 2 away from the substrate, the bonding of the light receiving chip 3 is completed, a second connection layer 4 is applied to the area where the light receiving chip 3 receives light, an isolation layer 5 is arranged on the side of the second connection layer 4 away from the substrate 1, the setting of the isolation layer 5 is completed, a third connection layer 6 is applied on the side of the isolation layer 5 away from the substrate, a light emitting chip 7 is arranged on the side of the third connection layer 6 away from the substrate 1, the setting of the light emitting chip 7 is realized, and then the pads 9 on the light receiving chip 7 are connected to the pads 9 on the substrate 1 through bonding wires 8, and the pads 9 on the light receiving chip 3 are connected to the pads 9 on the substrate 1 through bonding wires 8, thereby realizing the electrical connection of the optocoupler, and the above structure is packaged to obtain a stacked optocoupler.
[0069] Specifically, before forming the first connection layer 2 between the plurality of pads 9 of the substrate 1, the method further includes: forming a fourth connection layer 10 on the front surface of the substrate 1, and arranging a function chip 11 on the side of the fourth connection layer 10 away from the substrate 1, wherein the function chip 11 is used to process the light receiving signal of the light receiving chip 3. Specifically, Figure 3 As shown, before bonding the first connection layer 2 , the process further includes: applying a fourth connection layer 10 on the substrate 1 , and arranging a functional chip 11 on a side of the fourth connection layer 10 facing away from the substrate 1 .
[0070] It should be noted that the functional chip 11 includes one or two. When the number of the functional chips 11 is one, the optical receiving chip 3 is bonded to the side of the functional chip 11 away from the substrate 1 through the second connecting layer 4. When the number of the functional chips is two, the optical receiving chip 3 is bonded in the middle of the two functional chips 11. The interval between the two functional chips 11 meets the preset interval threshold to prevent the strength of the entire structure from being reduced.
[0071] In detail, the method further includes: electrically connecting the pads on the optical receiving chip 3 and the pads on the functional chip 11 based on the bonding wire 8, and electrically connecting the pads 9 on the functional chip 11 and the pads 9 on the substrate 1 based on the bonding wire 8, so as to realize the electrical connection between the optical receiving chip 3 and the substrate 1. Specifically, as Figure 3 As shown, the pads 9 on the optical receiving chip 3 are connected to the pads 9 on the functional chip 11 through the bonding wires 8, and the pads 9 on the functional chip 11 are connected to the pads 9 on the substrate 1 through the bonding wires 8, so that the optical receiving chip 3 is electrically connected to the substrate 1.
[0072] In more detail, the light emitting chip 7 is arranged on the side of the third connection layer 6 away from the substrate 1, including: obtaining the electrical signal output by the functional chip 11; adjusting the position of the light emitting chip 7 according to the electrical signal until the electrical signal meets the preset signal threshold, so that the light emitting chip 7 is located at the target position. Specifically, the electrical signal (voltage or current) output by the functional chip 11 is collected by using a detection device, and when the electrical signal does not meet the preset signal threshold, the position of the light emitting chip 7 is adjusted; when the electrical signal meets the preset signal threshold, the position of the light emitting chip 7 is determined to be the target position, so that the light emitting chip is bonded through the third connection layer.
[0073] In more detail, the first connection layer 2 is one of conductive glue, gold-tin solder, and epoxy resin glue; the second connection layer 4 and the third connection layer 6 are adhesives whose transmittance meets the first preset transmittance threshold, and the second connection layer 4 and the third connection layer 6 are one of epoxy resin glue, silicone, and photosensitive glue; the isolation layer 5 is an insulating material whose transmittance meets the second preset transmittance threshold, and the material of the isolation layer 5 can be sapphire, quartz glass, polyimide or other light-transmitting materials. The thickness of the isolation layer 5 is determined according to the isolation voltage of the photocoupler, and the photosensitive glue is UV glue.
[0074] It should be noted that the material of the fourth connection layer 10 can be the same as that of the first connection layer, or other adhesive materials can be used. The material of the bonding wire 8 can be gold wire, aluminum wire or copper wire, etc., and the wire diameter is selected according to the actual application.
[0075] Second, as Figure 4 As shown, the present application provides a method for manufacturing a stacked optocoupler, the manufacturing method at least comprising steps S101 to S107.
[0076] S401, providing a substrate 1, wherein the substrate 1 comprises a front side and a back side which are arranged opposite to each other, and a plurality of pads 9 are arranged on the front side of the substrate 1;
[0077] S402, forming a first connection layer 2 between a plurality of pads 9 on the substrate 1;
[0078] S403, disposing a light receiving integrated structure 12 on a side of the first connection layer 2 away from the substrate 1, so as to adhere the light receiving integrated structure 12 and the substrate 1 through the first connection layer 2, wherein the light receiving integrated structure 12 is an integrated structure of the light receiving chip 3 and the isolation layer 5;
[0079] S404, forming a third connection layer 6 on a side of the light receiving integrated structure 12 facing away from the substrate 1;
[0080] S405, arranging the light emitting chip 7 on the side of the third connection layer 6 facing away from the substrate 1, so as to adhere the isolation layer 5 and the light emitting chip 7 through the third connection layer 6;
[0081] S406 , electrically connecting the light receiving chip 3 and the substrate based on the bonding wire 8 , and electrically connecting the light emitting chip 7 and the substrate 1 , to obtain a stacked optocoupler.
[0082] Combination Figure 5 As shown, a substrate 1 is provided, a first connecting layer 2 is applied between a plurality of pads 9 of the substrate 1, a light receiving chip 3 is arranged on the side of the first connecting layer 2 facing away from the substrate, the bonding of the light receiving integrated structure 12 is completed, a third connecting layer 6 is applied on the side of the light receiving integrated structure 12 facing away from the substrate, a light emitting chip 7 is arranged on the side of the third connecting layer 6 facing away from the substrate 1, the arrangement of the light emitting chip 7 is realized, and then the pads 9 on the light receiving chip 7 are connected to the pads 9 on the substrate 1 through bonding wires 8, and the pads 9 of the light receiving integrated structure 12 are connected to the pads 9 on the substrate 1 through bonding wires 8, thereby realizing the electrical connection of the optocoupler, and the above structure is packaged to obtain a stacked optocoupler.
[0083] In detail, the method for obtaining the integrated light receiving structure 12 includes: coating the isolation layer 5 on the light receiving side of the light receiving chip 3 by thin film deposition to form the integrated light receiving structure 12. Specifically, the thin film deposition method includes one of the processes such as sputtering process, vapor deposition, atomic layer deposition, etc.
[0084] It should be noted that the manufacturing method of the stacked optocoupler provided in the second aspect embodiment belongs to the same concept as the manufacturing method of the stacked optocoupler provided in the first aspect embodiment, wherein the specific methods for defining the functional chip and each structure have been described in detail in the first aspect embodiment and will not be repeated here.
[0085] Thirdly, Figure 2 As shown, the present application also provides a stacked photoelectric coupler, which is obtained based on the manufacturing method of the stacked photoelectric coupler provided in the first aspect, and the stacked photoelectric coupler includes:
[0086] A substrate 1, comprising a front side and a back side arranged opposite to each other;
[0087] A light receiving chip 3 is arranged on the front side of the substrate 1, and the light receiving chip 3 is adhered to the substrate 1 through a first connecting layer 2;
[0088] An isolation layer 5 is arranged on a side of the light receiving chip 3 facing away from the substrate 1, and the isolation layer 5 and the light receiving chip 3 are bonded together via a second connection layer 4;
[0089] A light emitting chip 7 is disposed on a side of the isolation layer 5 facing away from the substrate 1, and the light emitting chip 7 and the isolation layer 5 are bonded to each other via a third connection layer 6;
[0090] The bonding wires 8 are used to connect the pads 9 on the light receiving chip 3 and the pads 9 on the substrate 1 , and to connect the pads 9 on the light emitting chip 7 and the pads 9 on the substrate 1 .
[0091] Fourthly, Figure 5 As shown, the present application also provides a stacked photoelectric coupler, which is obtained based on the manufacturing method of the stacked photoelectric coupler provided in the second aspect, and the stacked photoelectric coupler includes:
[0092] A substrate 1, comprising a front surface and a back surface arranged opposite to each other;
[0093] The light receiving integrated structure 13 is arranged on the front side of the substrate 1, and the light receiving integrated structure 13 and the substrate 1 are adhered to each other through the first connecting layer 2, wherein the light receiving integrated structure 12 is an integrated structure of the light receiving chip 3 and the isolation layer 5;
[0094] The light emitting chip 7 is arranged on a side of the light receiving integrated structure 12 away from the substrate 1, and the light emitting chip 7 and the light receiving integrated structure 12 are bonded together by a third connecting layer 6;
[0095] The bonding wires 8 are used to connect the pads 9 on the light receiving chip 3 and the pads 9 on the substrate 1 , and to connect the pads 9 on the light emitting chip 7 and the pads 9 on the substrate 1 .
[0096] Fifthly, Figure 6 As shown, the present application further provides a stacked photoelectric coupler, which is obtained based on the manufacturing method of the stacked photoelectric coupler provided in the first aspect or the second aspect, and the stacked photoelectric coupler includes:
[0097] A functional chip 11 is disposed on the front surface of the substrate 1, and the functional chip and the substrate 1 are adhered to each other via a fourth connection layer;
[0098] The light receiving chip 3 is arranged on a side of the function chip away from the substrate 1, and the light receiving chip 3 is adhered to the function chip via the first connection layer 2;
[0099] The composite layer 13 is arranged on the side of the light receiving chip 3 facing away from the substrate 1, wherein the composite layer 13 is composed of the second connection layer 4, the isolation layer 5 and the third connection layer 6 or the isolation layer 5 and the third connection layer 6;
[0100] A light emitting chip 7, which is arranged on a side of the composite layer away from the substrate 1;
[0101] The bonding wire 8 is used to electrically connect the pad 9 on the optical receiving chip 3 with the pad 9 on the functional chip 11, and to electrically connect the pad 9 on the functional chip 11 with the pad 9 on the substrate 1, and to electrically connect the pad 9 on the optical transmitting chip 7 with the pad 9 on the substrate 1.
[0102] It should be noted that the structure of the composite layer 13 can be formed by bonding the second connecting layer 4, the isolation layer 5 and the third connecting layer 6 provided in the first aspect, and the structure of the composite layer 13 can also be an optical receiving integrated structure 12 formed by thin film deposition of the isolation layer 5 and the third connecting layer 6 provided in the second aspect.
[0103] The present application provides a stacked photoelectric coupler and a manufacturing method thereof, the method comprising: forming a light receiving chip, an isolation layer and a light emitting chip in sequence on a provided substrate, connecting the substrate and the light receiving chip through a first connection layer, connecting the isolation layer and the light receiving chip through a second connection layer, and connecting the light emitting chip through a third connection layer to form a stacked photoelectric coupler. The stacked photoelectric coupler provided by the present application not only has a simple manufacturing method, but also has a smaller volume, improves the light transmission efficiency of the coupling product, and has more stable output parameters during operation. The isolation voltage required by the photoelectric coupler is provided through the isolation layer, thereby improving the performance of the photoelectric coupler.
[0104] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the technology may modify or change the above embodiments without violating the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by a person of ordinary skill in the art without departing from the spirit and technical ideas disclosed by the present invention shall still be covered by the claims of the present invention.
Claims
1. A method for manufacturing a stacked optocoupler, characterized in that: include: Providing a substrate, the substrate comprising a front side and a back side arranged opposite to each other, and a plurality of pads are arranged on the front side of the substrate; forming a first connection layer between a plurality of pads of the substrate; A light receiving chip is arranged on a side of the first connecting layer away from the substrate, so as to adhere the light receiving chip and the substrate through the first connecting layer; forming a second connection layer in a light receiving region of the light receiving chip on a side away from the substrate; forming an isolation layer and a third connection layer in sequence on a side of the second connection layer facing away from the substrate; Arranging a light emitting chip on a side of the third connection layer away from the substrate, and adhering the isolation layer and the light emitting chip through the third connection layer; The light receiving chip and the substrate are electrically connected based on bonding wires, and the light emitting chip and the substrate are electrically connected to obtain a stacked optocoupler.
2. The method for manufacturing a stacked photocoupler according to claim 1, wherein: Before forming a first connection layer between a plurality of pads of the substrate, the method further includes: A fourth connection layer is formed on the front surface of the substrate, and a function chip is arranged on a side of the fourth connection layer away from the substrate, wherein the function chip is used to process the light receiving signal of the light receiving chip.
3. The method for manufacturing a stacked photocoupler according to claim 2, wherein: The method further comprises: The pads on the optical receiving chip and the pads on the functional chip are electrically connected based on the bonding wires, and the pads on the functional chip and the pads on the substrate are electrically connected based on the bonding wires to achieve electrical connection between the optical receiving chip and the substrate.
4. The method for manufacturing a stacked optocoupler according to claim 2, wherein: A light emitting chip is arranged on a side of the third connection layer away from the substrate, comprising: Acquiring an electrical signal output by the functional chip; The position of the light emitting chip is adjusted according to the electrical signal until the electrical signal meets a preset signal threshold, so that the light emitting chip is located at a target position.
5. The stacked optocoupler according to claim 1, wherein: The first connecting layer is one of conductive glue, gold-tin solder, and epoxy resin glue; the second connecting layer and the third connecting layer are adhesives whose transmittance meets the first preset transmittance threshold, and the second connecting layer and the third connecting layer are one of epoxy resin glue, silicone glue, and photosensitive glue; the isolation layer is an insulating material whose transmittance meets the second preset transmittance threshold.
6. A method for manufacturing a stacked optocoupler, characterized in that: include: Providing a substrate, the substrate comprising a front side and a back side arranged opposite to each other, and a plurality of pads are arranged on the front side of the substrate; forming a first connection layer between a plurality of pads of the substrate; A light receiving integrated structure is arranged on a side of the first connecting layer away from the substrate, so as to adhere the light receiving integrated structure to the substrate through the first connecting layer, wherein the light receiving integrated structure is an integrated structure of a light receiving chip and an isolation layer; forming a third connection layer on a side of the light receiving integrated structure away from the substrate; A light emitting chip is arranged on a side of the third connecting layer away from the substrate, so that the isolation layer and the light emitting chip are adhered to each other through the third connecting layer; The light receiving chip and the substrate are electrically connected based on bonding wires, and the light emitting chip and the substrate are electrically connected to obtain a stacked optocoupler.
7. The method for manufacturing a stacked optocoupler according to claim 6, wherein: The method for obtaining the light receiving integrated structure includes: The isolation layer is plated on the light receiving side of the light receiving chip by thin film deposition to form a light receiving integrated structure.
8. A stacked photocoupler, characterized in that: include: A substrate including a front surface and a back surface disposed opposite to each other; A light receiving chip is arranged on the front side of the substrate, and the light receiving chip is adhered to the substrate via a first connecting layer; An isolation layer, which is arranged on a side of the light receiving chip away from the substrate, and the isolation layer and the light receiving chip are adhered to each other through a second connection layer; A light emitting chip is disposed on a side of the isolation layer away from the substrate, and the light emitting chip and the isolation layer are adhered to each other via a third connection layer; The bonding wire is used to connect the pad on the light receiving chip with the pad on the substrate, and to connect the pad on the light emitting chip with the pad on the substrate.
9. A stacked photocoupler, characterized in that: include: A substrate including a front surface and a back surface disposed opposite to each other; An integrated light receiving structure, which is arranged on the front side of the substrate, and the integrated light receiving structure is adhered to the substrate via a first connecting layer, wherein the integrated light receiving structure is an integrated structure of a light receiving chip and an isolation layer; A light emitting chip, which is disposed on a side of the light receiving integrated structure away from the substrate, and the light emitting chip and the light receiving integrated structure are adhered to each other through a third connecting layer; The bonding wire is used to connect the pad on the light receiving chip with the pad on the substrate, and to connect the pad on the light emitting chip with the pad on the substrate.
10. A stacked photocoupler, characterized in that: include: A substrate including a front surface and a back surface disposed opposite to each other; A functional chip is arranged on the front side of the substrate, and the functional chip is adhered to the substrate via a fourth connecting layer; A light receiving chip, which is arranged on a side of the function chip away from the substrate, and the light receiving chip is adhered to the function chip via a first connection layer; A composite layer, which is arranged on a side of the light receiving chip away from the substrate, wherein the composite layer is composed of the second connecting layer, the isolation layer and the third connecting layer or the isolation layer and the third connecting layer; A light emitting chip, which is arranged on a side of the composite layer away from the substrate; Bonding wires are used to connect the pads on the light receiving chip with the pads on the substrate, to connect the pads on the light emitting chip with the pads on the substrate, and to electrically connect the pads on the functional chip with the pads on the substrate.
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