Low-temperature flash-removing feed liquid and preparation method thereof

Abstract

The invention provides a low-temperature flash-removing liquid and a preparation method thereof, and aims to solve the problem of removing flash generated after a semiconductor frame is packaged. The flash removal liquid is composed of an alkaline amine compound, an alcohol ether compound, a permeable surfactant, a thickener, a corrosion inhibitor, a chelating agent, a stabilizer and an environment-friendly solvated phosphate compound, and can effectively remove flash at a low temperature of 55-85 DEG C, significantly reduce energy consumption and reduce the influence on the environment. Compared with the prior art, the flash removing liquid has the advantages of low-temperature operation, environmental protection, high efficiency, safety, cost effectiveness and the like, is suitable for removing flash after semiconductor frame packaging, improves the production efficiency and reduces the operation risk. By optimizing the proportion of the components, the flash is effectively removed at a low temperature, damage to a plastic package body and a metal frame or a base body is avoided, and meanwhile, the problem of partial layers in a product is avoided. The invention also comprises a specific method for using the flash removing liquid, and the method comprises the following steps: soaking the semiconductor frame in the flash removing liquid, and then performing high-pressure flushing to remove the flash.

Description

Technical Field

[0001] The invention relates to the field of electrochemical material surface treatment, in particular to a low-temperature overflow removal liquid for removing overflow generated after semiconductor frame packaging and a preparation method thereof. Background Art

[0002] With the rapid development of the semiconductor industry, packaging technology has become a key link to ensure chip performance and reliability. In the semiconductor frame packaging process, due to mold design and wear, the plastic packaging material will become liquid at high temperature and flow into the gap to form flash (flash or burr). These flashes not only affect the product's conductivity, heat dissipation and appearance, but may also affect the subsequent electroplating and welding processes. Traditional methods for removing flash include mechanical grinding, high-temperature immersion in strong acids or alkalis, and high-temperature softening with organic solvents, but these methods have problems such as low efficiency, high cost, and harm to the environment and the health of operators.

[0003] For example, Chinese patent CN201811547399X describes a neutral electrolytic deburring liquid, which improves safety and environmental protection, but still needs to be operated at a higher temperature and may cause damage to certain materials. In addition, Chinese patent CN2022112760698 discloses a treatment process for removing burrs from solid retaining frames of polymer materials. The process uses an inclined centrifugal finishing machine to perform deburring treatment, but this method may not be suitable for all types of semiconductor frame packaging. In addition, Chinese patent CN2018115998945 discloses a deburring agent that can be used for deburring, its preparation method and application. The deburring agent includes multiple components and can remove tape glue and overflow at a certain temperature, but there is also the problem of high operating temperature.

[0004] Therefore, the existing methods in the prior art are either inefficient, costly, or have potential risks to the environment and operators. There is an urgent need for a method that can effectively remove overflow at a lower temperature to reduce energy consumption, improve production efficiency, and reduce the impact on the environment and operators. Summary of the invention

[0005] The present invention aims to provide a low-temperature de-burst liquid and a preparation method thereof, which can effectively remove the overflow at a relatively low temperature, reduce the impact on the environment, reduce energy consumption, and improve processing efficiency and safety. The low-temperature de-burst liquid of the present invention is composed of an alkaline amine compound, an alcohol ether compound, a penetrating surfactant, a thickener, a corrosion inhibitor, a chelating agent, a stabilizer, and an environmentally friendly solvated phosphate compound. By optimizing the ratio of these components, the effective removal of the overflow is achieved within a temperature range of 55 to 85°C, which is much lower than the temperature required by the traditional method, thereby reducing the risk of damage to the semiconductor frame and the plastic package.

[0006] To achieve the above object, the present invention provides the following technical solutions:

[0007] A low-temperature de-overflowing liquid, the de-overflowing liquid is composed of the following components by weight:

[0008] a. Basic amine compounds 15-45;

[0009] b. Alcohol ether compounds 15-30;

[0010] c. Penetrating surfactant 3-8;

[0011] d. Thickener 1 to 3;

[0012] e. Corrosion inhibitor 0.2~0.8;

[0013] f. Chelating agent 0.2~0.8;

[0014] g. Stabilizer 0.2~0.8;

[0015] h. Environmentally friendly solvated phosphate compounds 2 to 5;

[0016] i. The balance is water.

[0017] Preferably, the alkaline amine compound is selected from at least one of acetamide, diethanolamine and aniline.

[0018] Preferably, the alcohol ether compound is selected from at least one of dipropylene glycol methyl ether acetate, dipropylene glycol methyl ether, diethylene glycol butyl ether, dipropylene glycol butyl ether, diethylene glycol ethyl ether, tripropylene glycol methyl ether and dipropylene glycol butyl ether.

[0019] Preferably, the osmotic surfactant is selected from isomeric tridecanol polyoxyethylene ether, TERGITOL TM At least one of N-10 nonionic surfactant, Dynol 607 acetylenic glycol, cocamidopropyl betaine, cetyltrimethylammonium bromide, JFC fatty alcohol polyoxyethylene ether, and nonylphenol polyoxyethylene ether.

[0020] Preferably, the thickener is selected from at least one of hydroxyethyl cellulose, xanthan gum and carboxymethyl cellulose.

[0021] Preferably, the corrosion inhibitor is selected from at least one of sodium benzoate, disodium hydrogen phosphate and sodium sulfate.

[0022] Preferably, the chelating agent is selected from at least one of EDTA, sodium citrate and potassium sodium tartrate.

[0023] Preferably, the stabilizer is selected from at least one of potassium dihydrogen phosphate, magnesium sulfate and calcium chloride.

[0024] Preferably, the environmentally friendly solvated phosphate ester compound is selected from at least one of tributyl phosphate, triphenyl phosphate and tri(2-ethylhexyl) phosphate.

[0025] The present invention also provides a method for preparing the low-temperature overflow removal liquid, comprising the following steps:

[0026] a. dissolving the basic amine compound by weight in a certain amount of water to form material 1;

[0027] b. dissolving the alcohol ether compound by weight in a certain amount of water to form material 2;

[0028] c. dissolving the osmotic surfactant by weight in a certain amount of water to form material three;

[0029] d. Add the thickener, corrosion inhibitor, chelating agent, stabilizer, environmentally friendly solvated phosphate compound, and materials 1 to 3 to the remaining water in sequence and mix and stir for 2 to 4 hours to obtain the required low-temperature overflow removal liquid.

[0030] The present invention also provides a method for removing overflow after semiconductor frame packaging by using the low-temperature overflow removal liquid, comprising the following steps:

[0031] a. Immerse the semiconductor frame in the de-overflow liquid at a temperature of 55 to 85°C;

[0032] b. Use high pressure flushing at a pressure of 100 to 250 kg to remove overflow.

[0033] Compared with the prior art, the present invention has the following beneficial effects:

[0034] Low temperature operation: The low temperature de-spill liquid of the present invention can be used at a temperature of 55 to 85°C, which is much lower than the temperature required by traditional methods, thereby reducing energy consumption and the risk of thermal damage to materials.

[0035] Environmental protection: Since the operating temperature is lowered, the emission of harmful gases is reduced, and the dependence on harmful chemicals such as strong acids and alkalis is reduced, it is more environmentally friendly.

[0036] High efficiency: The overflow removal liquid of the present invention can effectively remove overflow in a short time (30 to 90 minutes), thereby improving production efficiency.

[0037] Safety: Reduces the risk of operators being exposed to harmful chemicals and improves operational safety.

[0038] Cost-effectiveness: Reduced use of chemicals and energy consumption, lowering production costs.

[0039] Addition of thickeners, corrosion inhibitors, chelating agents and stabilizers: The addition of these ingredients improves the performance of the de-spill fluid, making it more effective in removing spills at lower temperatures, while protecting the material from excessive corrosion, and maintaining the performance of the de-spill fluid stable, extending its service life;

[0040] Addition of environmentally friendly solvated phosphate compounds: Mainly used as environmentally friendly additives to improve the solubility and permeability of spill removal liquids, thereby removing spills more effectively. They help reduce the impact of spill removal liquids on the environment, while reducing dependence on harmful chemicals such as strong acids and alkalis. In addition, environmentally friendly solvated phosphate compounds can also provide flame retardant effects, increase the safety of spill removal liquids, and reduce the dangers that may occur during the spill removal process. DETAILED DESCRIPTION

[0041] The following will be combined with the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0042] Embodiment 1:

[0043] Dissolve 15 parts of alkaline amine compound ethylenediamine and 5 parts of diethanolamine in 10 parts of water to form material 1;

[0044] 20 parts of dipropylene glycol methyl ether, an alcohol ether compound, is dissolved in 10 parts of water to form material 2;

[0045] 5 parts of penetrating surfactant isotridecyl alcohol polyoxyethylene ether are dissolved in 10 parts of water to form material three;

[0046] Add 2 parts of thickener hydroxyethyl cellulose, 0.5 parts of corrosion inhibitor sodium benzoate, 0.5 parts of chelating agent EDTA, 0.5 parts of stabilizer potassium dihydrogen phosphate, 3 parts of environmentally friendly solvated phosphate compounds, and materials 1 to 3 in sequence to the remaining water (18.5 parts), mix and stir for 2 hours to obtain a low-temperature de-overflowing liquid.

[0047] The de-flashing liquid was used to remove the flash after semiconductor frame packaging. The results showed that the flash was effectively removed within 30 minutes without obvious damage to the frame.

[0048] Embodiment 2:

[0049] Dissolve 20 parts of alkaline amine compound ethylenediamine and 5 parts of diethanolamine in 11.5 parts of water to form material 1;

[0050] 20 parts of dipropylene glycol methyl ether, an alcohol ether compound, is dissolved in 10 parts of water to form material 2;

[0051] 6 parts of isotridecyl alcohol polyoxyethylene ether of the penetrating surfactant are dissolved in 10 parts of water to form material three;

[0052] Add 2 parts of thickener hydroxyethyl cellulose, 0.5 parts of corrosion inhibitor sodium benzoate, 0.5 parts of chelating agent EDTA, 0.5 parts of stabilizer potassium dihydrogen phosphate, 4 parts of environmentally friendly solvated phosphate compounds, and materials 1 to 3 in sequence to the remaining water (10 parts), mix and stir for 2 hours to obtain a low-temperature de-overflowing liquid.

[0053] The de-flashing liquid was used to remove the flash after semiconductor frame packaging. The results showed that the flash was effectively removed within 30 minutes without obvious damage to the frame.

[0054] Embodiment three:

[0055] Dissolve 25 parts of alkaline amine compound ethylenediamine and 5 parts of diethanolamine in 9.5 parts of water to form material 1;

[0056] 20 parts of dipropylene glycol methyl ether, an alcohol ether compound, is dissolved in 10 parts of water to form material 2;

[0057] 4 parts of isotridecyl alcohol polyoxyethylene ether of the penetrating surfactant are dissolved in 10 parts of water to form material three;

[0058] Add 2 parts of thickener hydroxyethyl cellulose, 0.5 parts of corrosion inhibitor sodium benzoate, 0.5 parts of chelating agent EDTA, 0.5 parts of stabilizer potassium dihydrogen phosphate, 3 parts of environmentally friendly solvated phosphate compounds, and materials 1 to 3 in sequence to the remaining water (10 parts), mix and stir for 2 hours to obtain a low-temperature de-overflowing liquid.

[0059] The de-flashing liquid was used to remove the flash after semiconductor frame packaging. The results showed that the flash was effectively removed within 30 minutes without obvious damage to the frame.

[0060] Embodiment 4:

[0061] Dissolve 25 parts of alkaline amine compound ethylenediamine and 5 parts of diethanolamine in 6.5 parts of water to form material 1;

[0062] 25 parts of dipropylene glycol methyl ether, an alcohol ether compound, is dissolved in 10 parts of water to form material 2;

[0063] 6 parts of isotridecyl alcohol polyoxyethylene ether of the penetrating surfactant are dissolved in 10 parts of water to form material three;

[0064] Add 2 parts of thickener hydroxyethyl cellulose, 0.5 parts of corrosion inhibitor sodium benzoate, 0.5 parts of chelating agent EDTA, 0.5 parts of stabilizer potassium dihydrogen phosphate, 4 parts of environmentally friendly solvated phosphate ester compounds and materials 1 to 3 in sequence to the remaining water (5 parts), mix and stir for 2 hours to obtain a low-temperature de-overflowing liquid.

[0065] The de-flashing liquid was used to remove the flash after semiconductor frame packaging. The results showed that the flash was effectively removed within 30 minutes without obvious damage to the frame.

[0066] Embodiment five:

[0067] Dissolve 20 parts of alkaline amine compound ethylenediamine and 5 parts of diethanolamine in 14.5 parts of water to form material 1;

[0068] 20 parts of dipropylene glycol methyl ether, an alcohol ether compound, is dissolved in 10 parts of water to form material 2;

[0069] 4 parts of isotridecyl alcohol polyoxyethylene ether of the penetrating surfactant are dissolved in 10 parts of water to form material three;

[0070] Add 2 parts of thickener hydroxyethyl cellulose, 0.5 parts of corrosion inhibitor sodium benzoate, 0.5 parts of chelating agent EDTA, 0.5 parts of stabilizer potassium dihydrogen phosphate, 3 parts of environmentally friendly solvated phosphate compounds, and materials 1 to 3 in sequence to the remaining water (10 parts), mix and stir for 2 hours to obtain a low-temperature de-overflowing liquid.

[0071] The de-flashing liquid was used to remove the flash after semiconductor frame packaging. The results showed that the flash was effectively removed within 30 minutes without obvious damage to the frame.

[0072] Embodiment six:

[0073] Dissolve 25 parts of alkaline amine compound ethylenediamine and 5 parts of diethanolamine in 9.5 parts of water to form material 1;

[0074] 25 parts of dipropylene glycol methyl ether, an alcohol ether compound, is dissolved in 10 parts of water to form material 2;

[0075] 3 parts of isotridecyl alcohol polyoxyethylene ether of the penetrating surfactant are dissolved in 10 parts of water to form material three;

[0076] Add 2 parts of thickener hydroxyethyl cellulose, 0.5 parts of corrosion inhibitor sodium benzoate, 0.5 parts of chelating agent EDTA, 0.5 parts of stabilizer potassium dihydrogen phosphate, 3 parts of environmentally friendly solvated phosphate compounds, and materials 1 to 3 in sequence to the remaining water (6 parts), mix and stir for 2 hours to obtain a low-temperature de-overflowing liquid.

[0077] The de-flashing liquid was used to remove the flash after semiconductor frame packaging. The results showed that the flash was effectively removed within 30 minutes without obvious damage to the frame.

[0078] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A low-temperature overflow removal liquid, characterized in that: The de-overflowing liquid is composed of the following components in weight percentage: a. Basic amine compounds 15-45; b. Alcohol ether compounds 15-30; c. Penetrating surfactant 3-8; d. Thickener 1 to 3; e. Corrosion inhibitor 0.2~0.8; f. Chelating agent 0.2~0.8; g. Stabilizer 0.2~0.8; h. Environmentally friendly solvated phosphate compounds 2 to 5; i. The balance is water.

2. The low-temperature overflow removal liquid according to claim 1, characterized in that: The alkaline amine compound is selected from at least one of acetamide, diethanolamine and aniline.

3. The low-temperature overflow removal liquid according to claim 1, characterized in that: The alcohol ether compound is selected from at least one of dipropylene glycol methyl ether acetate, dipropylene glycol methyl ether, diethylene glycol butyl ether, dipropylene glycol butyl ether, diethylene glycol ethyl ether, tripropylene glycol methyl ether and dipropylene glycol butyl ether.

4. The low-temperature overflow removal liquid according to claim 1, characterized in that: The osmotic surfactant is selected from isomeric tridecanol polyoxyethylene ether, TERGITOL TM At least one of N-10 nonionic surfactant, Dynol 607 acetylenic glycol, cocamidopropyl betaine, cetyltrimethylammonium bromide, JFC fatty alcohol polyoxyethylene ether, and nonylphenol polyoxyethylene ether.

5. The low-temperature overflow removal liquid according to claim 1, characterized in that: The thickener is selected from at least one of hydroxyethyl cellulose, xanthan gum and carboxymethyl cellulose.

6. The low-temperature overflow removal liquid according to claim 1, characterized in that: The corrosion inhibitor is selected from at least one of sodium benzoate, disodium hydrogen phosphate and sodium sulfate.

7. The low-temperature overflow removal liquid according to claim 1, characterized in that: The chelating agent is selected from at least one of EDTA, sodium citrate and potassium sodium tartrate.

8. The low-temperature overflow removal liquid according to claim 1, characterized in that: The stabilizer is selected from at least one of potassium dihydrogen phosphate, magnesium sulfate, and calcium chloride; The environmentally friendly solvated phosphate ester compound is selected from at least one of tributyl phosphate, triphenyl phosphate and tri(2-ethylhexyl) phosphate.

9. A method for preparing the low-temperature de-spill liquid according to any one of claims 1 to 8, characterized in that: The following steps are involved: a. dissolving the basic amine compound by weight in a certain amount of water to form material 1; b. dissolving the alcohol ether compound by weight in a certain amount of water to form material 2; c. dissolving the osmotic surfactant by weight in a certain amount of water to form material three; d. Add the thickener, corrosion inhibitor, chelating agent, stabilizer, environmentally friendly solvated phosphate compound, and materials 1 to 3 to the remaining water in sequence and mix and stir for 2 to 4 hours to obtain the required low-temperature overflow removal liquid.

10. A method for removing flash after semiconductor frame packaging using the low-temperature flash removal liquid according to any one of claims 1 to 8, characterized in that: The following steps are involved: a. Immerse the semiconductor frame in the de-overflow liquid at a temperature of 55 to 85°C; b. Use high pressure flushing at a pressure of 100 to 250 kg to remove overflow.