Wafer tray and thin film deposition equipment and method

Abstract

The invention provides a wafer tray, thin film deposition equipment and a thin film deposition method. The wafer tray comprises a tray body and an edge ring. A plurality of first positioning parts are arranged on the edge of the upper surface of the tray body. And a plurality of second positioning parts are arranged on the edge of the lower surface of the edge ring. The plurality of second positioning parts are matched with the plurality of first positioning parts, and the edge ring is eccentrically mounted on the upper surface of the tray body, so that the thickness of a film on the edge of a wafer borne by the tray body and surrounded by the edge ring is corrected in a subsequent film deposition process. According to the invention, the edge ring having the fixed eccentric distance with the center of the tray body is arranged for adjusting the distance between the edge ring and the edge of the wafer, so that the film thickness of the edge of the wafer is adjusted, and the uniformity of a film deposited on the surface of the wafer is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor device processing, and in particular to a wafer tray, a thin film deposition device, and a thin film deposition method. Background Art

[0002] In the field of semiconductor device processing, the uniformity and film thickness distribution of the film directly affect the performance and production efficiency of semiconductor devices. During the thin film deposition process, the thickness of the film is usually thinner in the center and thicker in the edge area. This uneven film thickness phenomenon is particularly obvious at the edge of the wafer, which usually leads to a large fluctuation range of the edge film thickness, and even high and low points with significant differences in film thickness. The existing edge ring technology is widely used in the thin film deposition process to change the film thickness at the edge of the wafer. However, since the inner diameter center of the existing edge ring is concentric with the center of the wafer, it can only increase or decrease the film thickness at the edge of the wafer as a whole, and cannot accurately control the local fluctuation of the edge film thickness. Especially when the edge film thickness of the wafer fluctuates over a large range and has obvious highs and lows, the traditional edge ring cannot accurately adjust it, which seriously affects the film quality of the wafer.

[0003] In order to overcome the above-mentioned defects of the prior art, the art urgently needs an improved wafer tray for adjusting the distance between the edge ring and the edge of the wafer, thereby adjusting the film thickness at the edge of the wafer to improve the uniformity of the thin film deposited on the wafer surface. Summary of the invention

[0004] A brief summary of one or more aspects is given below to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceived aspects, and is neither intended to identify the key or decisive elements of all aspects nor to define the scope of any or all aspects. Its only purpose is to give some concepts of one or more aspects in a simplified form as a prelude to a more detailed description that will be given later.

[0005] In order to overcome the above-mentioned defects of the prior art, the present invention provides a wafer tray, a thin film deposition device and a thin film deposition method, which can adjust the distance between the edge ring and the edge of the wafer by setting an edge ring with a fixed eccentricity to the center of the tray body, and then adjust the film thickness at the edge of the wafer to improve the uniformity of the thin film deposited on the wafer surface.

[0006] Specifically, the wafer tray provided according to the first aspect of the present invention comprises a tray body and an edge ring. A plurality of first positioning portions are provided at the edge of the upper surface of the tray body. A plurality of second positioning portions are provided at the edge of the lower surface of the edge ring. The plurality of second positioning portions cooperate with the plurality of first positioning portions to eccentrically mount the edge ring to the upper surface of the tray body, so as to correct the film thickness of the edge of the wafer carried by the tray body and surrounded by the edge ring in a subsequent thin film deposition process.

[0007] Furthermore, in some embodiments of the present invention, one of the first positioning portion and the second positioning portion is a positioning hole, and the other is a positioning pin.

[0008] Furthermore, in some embodiments of the present invention, the plurality of first positioning portions and the plurality of second positioning portions are respectively distributed on the edge of the upper surface of the tray body and the edge of the lower surface of the edge ring with the same diameter. The width of the edge ring on its first side is greater than the width of its opposite second side, so that the center of the inner wall and the center of the tray body form an eccentricity toward the second side.

[0009] Furthermore, in some embodiments of the present invention, the wafer tray comprises a plurality of edge rings, each of which has a different eccentricity and is selectively mounted on the upper surface of the tray body according to the film thickness of the wafer edge.

[0010] Further, in some embodiments of the present invention, two first positioning parts are provided at the edge of the upper surface of the tray body. Three or more second positioning parts are provided at the edge of the lower surface of the edge ring. The edge ring is rotated to a corresponding angle according to the distribution of the film thickness at the edge of the wafer, and the edge ring is eccentrically mounted to the upper surface of the tray body via two second positioning parts aligned with the two first positioning parts, so as to correct the film thickness at the edge of the wafer in a subsequent thin film deposition process. Or three or more first positioning parts are provided at the edge of the upper surface of the tray body. Two second positioning parts are provided at the edge of the lower surface of the edge ring. The edge ring is rotated to a corresponding angle according to the distribution of the film thickness at the edge of the wafer, and the edge ring is eccentrically mounted to the upper surface of the tray body via two first positioning parts aligned with the two second positioning parts, so as to correct the film thickness at the edge of the wafer in a subsequent thin film deposition process.

[0011] Furthermore, in some embodiments of the present invention, the tray body is connected to a rotating mechanism for rotating the tray body according to the film thickness distribution at the edge of the wafer after the edge ring is eccentrically mounted to the upper surface of the tray body, so as to correct the film thickness at the edge of the wafer in a subsequent thin film deposition process.

[0012] Furthermore, in some embodiments of the present invention, the wafer tray also includes a controller, which is configured to: obtain the actual film thickness distribution and the target film thickness distribution of the wafer edge, and determine the deposition thickness distribution of the wafer edge by the film deposition process based on the difference between the two; determine the direction of the maximum value based on the deposition thickness distribution; and rotate the tray body to rotate the farthest end of the edge ring to the center of the tray body to the direction of the maximum value, so that the wafer edge reaches the target film thickness distribution after passing through the thin film deposition process.

[0013] Furthermore, in some embodiments of the present invention, a heating element is integrated in the tray body for heating the wafer during the thin film deposition process.

[0014] In addition, the above-mentioned thin film deposition equipment provided according to the second aspect of the present invention includes a process chamber, and the process chamber is equipped with a wafer tray provided according to the first aspect of the present invention.

[0015] In addition, the above-mentioned thin film deposition method provided according to the third aspect of the present invention includes the following steps: obtaining the actual film thickness distribution of a wafer edge and its corresponding target film thickness distribution, and determining the deposition thickness distribution of the wafer edge by the thin film deposition process based on the difference between the two; determining the direction of the maximum value therein based on the deposition thickness distribution; rotating the tray body or edge ring of the wafer tray provided by the first aspect of the present invention, and rotating the farthest end of the edge ring to the center of the tray body to the direction of the maximum value; and performing a thin film deposition process on the wafer carried by the tray body and surrounded by the edge ring so that its edge reaches the target film thickness distribution. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The above features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or features may have the same or similar reference numerals.

[0017] Figure 1 A schematic structural diagram of a wafer tray provided according to some embodiments of the present invention is shown.

[0018] Figure 2 A schematic structural diagram of a wafer tray provided according to some embodiments of the present invention is shown.

[0019] Figure 3 A simplified schematic cross-sectional view of the outer and inner diameters of an edge ring according to some embodiments of the present invention is shown.

[0020] Figure 4 A schematic structural diagram of a tray body provided according to some embodiments of the present invention is shown.

[0021] Figure 5 A schematic structural diagram of an edge ring provided according to some embodiments of the present invention is shown.

[0022] Figure 6 A schematic cross-sectional view of a tray body and an edge ring provided according to some embodiments of the present invention is shown.

[0023] Figure 7 A schematic cross-sectional view of a wafer tray provided according to some embodiments of the present invention is shown.

[0024] Figure 8 A schematic structural diagram of a wafer tray provided according to some embodiments of the present invention is shown.

[0025] Fig. 9 A schematic cross-sectional view of a wafer tray provided according to some embodiments of the present invention is shown.

[0026] Fig.10 A schematic flow chart of a thin film deposition method provided according to some embodiments of the present invention is shown.

[0027] Fig.11 A schematic diagram showing the position of the maximum distance between the wafer edge and the edge ring provided in accordance with some embodiments of the present invention is shown.

[0028] Fig.12 A schematic diagram showing the position of the minimum distance between the wafer edge and the edge ring provided in accordance with some embodiments of the present invention is shown.

[0029] Fig.13 A diagram showing the electron density distribution inside a wafer tray provided according to a reference example is shown.

[0030] Fig.14 A diagram showing the electron density distribution inside a wafer tray provided by some embodiments of the present invention is shown.

[0031] Reference numerals:

[0032] 11 Tray body

[0033] 111 First positioning unit

[0034] 12 Edge Ring

[0035] 121 Second positioning unit

[0036] 13 Wafer DETAILED DESCRIPTION

[0037] The following specific embodiments illustrate the implementation of the present invention, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this implementation. On the contrary, the purpose of introducing the invention in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0038] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0039] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the directions shown in the paragraph and the related drawings. Such relative terms are only used for the convenience of description and do not mean that the device described therein must be manufactured or operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0040] It is understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below may be referred to as a second component, region, layer and / or part without departing from some embodiments of the present invention.

[0041] As mentioned above, the existing edge ring technology is widely used in thin film deposition processes to change the film thickness at the edge of the wafer. However, since the inner diameter center of the existing edge ring is concentric with the center of the wafer, it can only increase or decrease the film thickness at the edge of the wafer as a whole, but cannot accurately control the local fluctuation of the edge film thickness. In particular, when the edge film thickness of the wafer fluctuates over a large range and has obvious high and low points, the traditional edge ring cannot accurately adjust it, which seriously affects the film quality of the wafer.

[0042] In order to overcome the above-mentioned defects of the prior art, the present invention provides a wafer tray, a thin film deposition device and a thin film deposition method, which can adjust the distance between the edge ring and the edge of the wafer by setting an edge ring with a fixed eccentricity to the center of the tray body, and then adjust the film thickness at the edge of the wafer to improve the uniformity of the thin film deposited on the wafer surface.

[0043] In a non-limiting embodiment, the thin film deposition apparatus provided in the second aspect of the present invention includes a process chamber, wherein the process chamber is provided with a wafer tray provided in the first aspect of the present invention.

[0044] Please refer to the reference for details Figure 1 and Figure 2 . Figure 1 A schematic structural diagram of a wafer tray provided according to some embodiments of the present invention is shown. Figure 2 A schematic structural diagram of a wafer tray provided according to some embodiments of the present invention is shown.

[0045] exist Figure 1 and Figure 2 In the illustrated embodiment, the wafer tray provided by the first aspect of the present invention includes a tray body 11 and an edge ring 12. Here, a plurality of first positioning portions 111 are provided at the edge of the upper surface of the tray body 11. A plurality of second positioning portions 121 are provided at the edge of the lower surface of the edge ring 12. Here, the plurality of second positioning portions 121 cooperate with the plurality of first positioning portions 111 to eccentrically mount the edge ring 12 to the upper surface of the tray body 11, so as to correct the film thickness of the edge of the wafer 13 carried by the tray body 11 and surrounded by the edge ring 12 in the subsequent thin film deposition process.

[0046] Specifically, the edge ring 12 can change the airflow and temperature field at the edge of the wafer 13 so that the deposition conditions at the edge of the wafer 13 are similar to those at the center, thereby avoiding the phenomenon of the edge film being too thick or too thin.

[0047] Further, in Figure 1 and Figure 2 In the illustrated embodiment, one of the first positioning portion 111 and the second positioning portion 121 is a positioning hole, and the other is a positioning pin.

[0048] Please refer to further Figure 3 . Figure 3 A simplified schematic cross-sectional view of the outer and inner diameters of an edge ring according to some embodiments of the present invention is shown.

[0049] like Figure 3As shown, a plurality of first positioning portions 111 and a plurality of second positioning portions 121 are respectively distributed at the edge of the upper surface of the tray body 11 and the edge of the lower surface of the edge ring 12 with the same diameter. Here, the width of the edge ring 12 on its first side is greater than the width of its opposite second side, so that the center of the inner wall and the center of the tray body 11 form an eccentric distance e toward the second side.

[0050] Further, in some preferred embodiments, the wafer tray provided by the first aspect of the present invention includes a plurality of edge rings 12. Here, each edge ring 12 has a different eccentricity e (for example, 0.1 to 10 mm), and is selectively mounted on the upper surface of the tray body 11 according to the film thickness of the edge of the wafer 13.

[0051] Please refer to Figure 4 to Figure 7 . Figure 4 A schematic structural diagram of a tray body provided according to some embodiments of the present invention is shown. Figure 5 A schematic structural diagram of an edge ring provided according to some embodiments of the present invention is shown. Figure 6 A schematic cross-sectional view of a tray body and an edge ring provided according to some embodiments of the present invention is shown. Figure 7 A schematic cross-sectional view of a wafer tray provided according to some embodiments of the present invention is shown.

[0052] exist Figure 4 In the embodiment shown, two first positioning portions 111 are provided at the edge of the upper surface of the tray body 11. Figure 5 In the illustrated embodiment, the edge of the lower surface of the edge ring 12 is provided with three or more (for example, 12) second positioning portions 121. Figure 6 and Figure 7 In the illustrated embodiment, the edge ring 12 is rotated to a corresponding angle according to the film thickness distribution at the edge of the wafer 13, and the edge ring 12 is eccentrically mounted to the upper surface of the tray body 11 via two second positioning portions 121 aligned with the two first positioning portions 111, so as to correct the film thickness at the edge of the wafer 13 in the subsequent thin film deposition process.

[0053] Please refer to Figure 8 and Fig. 9 . Figure 8 A schematic structural diagram of a wafer tray provided according to some embodiments of the present invention is shown. Fig. 9 A schematic cross-sectional view of a wafer tray provided according to some embodiments of the present invention is shown.

[0054] exist Figure 8 In the illustrated embodiment, the edge of the upper surface of the tray body 11 is provided with three or more (for example, 12) first positioning portions 111, and the edge of the lower surface of the edge ring 12 is provided with two second positioning portions 121. Fig. 9 In the illustrated embodiment, the edge ring 12 is rotated to a corresponding angle according to the film thickness distribution at the edge of the wafer 13, and the edge ring 12 is eccentrically mounted to the upper surface of the tray body 11 via two first positioning portions 111 aligned with two second positioning portions 121, so as to correct the film thickness at the edge of the wafer 13 in the subsequent thin film deposition process.

[0055] In addition, in some preferred embodiments, the above-mentioned tray body 11 is connected to a rotating mechanism, which is used to rotate the tray body 11 according to the film thickness distribution at the edge of the wafer 13 after the edge ring 12 is eccentrically installed on the upper surface of the tray body 11, so as to correct the film thickness at the edge of the wafer 13 in the subsequent thin film deposition process.

[0056] In addition, in some optional embodiments, the wafer tray provided in the first aspect of the present invention further includes a controller. Here, the controller can be connected to the rotating mechanism to implement the thin film deposition method provided in the third aspect of the present invention.

[0057] Furthermore, in some optional embodiments, a heating element is integrated into the tray body 11 for heating the wafer 13 during the thin film deposition process.

[0058] The working principle of the above-mentioned thin film deposition device will be described below in conjunction with some embodiments of the thin film deposition method. Those skilled in the art will understand that these embodiments of the thin film deposition method are only some non-limiting implementation methods provided by the present invention, which are intended to clearly demonstrate the main concept of the present invention and provide some specific solutions that are convenient for the public to implement, rather than to limit all functions or all working modes of the thin film deposition device. Similarly, the thin film deposition device is only a non-limiting implementation method provided by the present invention, and does not constitute a limitation on the execution subject or execution order of each step in these thin film deposition methods.

[0059] Please refer to Figure 10 to Figure 12 . Fig.10 A schematic flow chart of a thin film deposition method provided according to some embodiments of the present invention is shown. Fig.11 A schematic diagram showing the position of the maximum distance between the wafer edge and the edge ring provided in accordance with some embodiments of the present invention is shown. Fig.12 A schematic diagram showing the position of the minimum distance between the wafer edge and the edge ring provided in accordance with some embodiments of the present invention is shown.

[0060] like Fig.10 As shown, the above-mentioned thin film deposition equipment provided by the second aspect of the present invention can first obtain the actual film thickness distribution of the edge of a wafer 13 and its corresponding target film thickness distribution, and determine the deposition thickness distribution of the edge of the wafer 13 by the thin film deposition process based on the difference between the two.

[0061] Specifically, in the above-mentioned thin film deposition process, there are product correction process scenarios in which the actual film thickness distribution is uneven but the target film thickness distribution is uniform, customized process scenarios in which the actual film thickness distribution is uniform but the target film thickness distribution is uneven, and error compensation process scenarios in which both the actual film thickness distribution and the target film thickness distribution are uniform but the film deposition rate is uneven.

[0062] Afterwards, the thin film deposition equipment can determine the direction of the maximum value based on the deposition thickness distribution.

[0063] Thereafter, the thin film deposition device may rotate the tray body 11 or the edge ring 12 of the wafer tray provided in the first aspect of the present invention, and rotate the farthest end of the edge ring 12 from the center of the tray body 11 to the direction of the maximum value.

[0064] Specifically, if Fig.11 As shown, the maximum distance between the edge of the wafer 13 and the edge ring 11 is d1. Fig.12 As shown, the minimum distance between the edge of the wafer 13 and the edge ring 11 is d2.

[0065] Thereafter, the thin film deposition device may perform a thin film deposition process on the wafer 13 carried by the tray body 11 and surrounded by the edge ring 12 , so that the wafer 13 reaches a target film thickness distribution at its edge.

[0066] Please refer to Fig.13 and Fig.14 . Fig.13 A diagram showing the electron density distribution inside a wafer tray provided according to a reference example is shown. Fig.14 A diagram showing the electron density distribution inside a wafer tray provided by some embodiments of the present invention is shown.

[0067] Compared to Fig.14 The distance between the edge ring and the wafer of the present invention is shown as follows: Fig.13 The edge ring shown is closer to the wafer, the red area of ​​electron density is larger, and its electron density is higher, so the deposition rate is higher and the film deposition is thicker. In this way, the wafer tray provided by the first aspect of the present invention can adjust the film thickness at the edge of the wafer 13 according to the distribution of film thickness on the surface of the wafer 13 during the film deposition process by eccentrically setting the edge ring 12 and the tray body 11, so as to improve the uniformity of the film deposited on the surface of the wafer 13.

[0068] In summary, the above-mentioned wafer tray, thin film deposition equipment and thin film deposition method provided by the present invention can all be used to adjust the distance between the edge ring and the edge of the wafer by setting an edge ring with a fixed eccentricity to the center of the tray body, thereby adjusting the film thickness at the edge of the wafer to improve the uniformity of the thin film deposited on the wafer surface.

[0069] Although the above methods are illustrated and described as a series of actions for simplicity of explanation, it should be understood and appreciated that these methods are not limited by the order of the actions, because according to one or more embodiments, some actions may occur in a different order and / or concurrently with other actions from those illustrated and described herein or not illustrated and described herein but understandable to those skilled in the art.

[0070] Although the controller described in the above embodiments can be implemented by a combination of software and hardware. However, it is understood that the controller can also be implemented in software and hardware. For hardware implementation, the controller can be implemented in one or more application-specific integrated circuits (ASICs), digital signal processors (DSPs), programmable logic devices (PLDs), field programmable gate arrays (FPGAs), processors, controllers, microcontrollers, microprocessors, other electronic devices for performing the above functions, or a selection combination of the above devices. For software implementation, the controller can be implemented by independent software modules such as procedures and functions running on a general-purpose chip, each of which performs one or more functions and operations described herein.

[0071] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but should be granted the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A wafer tray, characterized in that: include: The tray body has a plurality of first positioning portions provided on the edge of the upper surface thereof; An edge ring has a plurality of second positioning portions on the edge of its lower surface, wherein the plurality of second positioning portions cooperate with the plurality of first positioning portions to eccentrically mount the edge ring to the upper surface of the tray body, so as to correct the film thickness of the edge of the wafer carried by the tray body and surrounded by the edge ring in a subsequent thin film deposition process.

2. The wafer tray according to claim 1, wherein: One of the first positioning portion and the second positioning portion is a positioning hole, and the other is a positioning pin.

3. The wafer tray according to claim 1, wherein: The plurality of first positioning portions and the plurality of second positioning portions are respectively distributed on the edge of the upper surface of the tray body and the edge of the lower surface of the edge ring according to the same diameter, wherein: The width of the edge ring on a first side is greater than that of an opposite second side, so that the center of the inner wall and the center of the tray body form an eccentricity toward the second side.

4. The wafer tray according to claim 3, characterized in that: The wafer tray comprises a plurality of edge rings, wherein each edge ring has a different eccentricity and is selectively mounted on the upper surface of the tray body according to the film thickness of the wafer edge.

5. The wafer tray according to claim 1, wherein: The edge of the upper surface of the tray body is provided with two first positioning parts, and the edge of the lower surface of the edge ring is provided with three or more second positioning parts, the edge ring is rotated to a corresponding angle according to the film thickness distribution of the wafer edge, and the edge ring is eccentrically mounted to the upper surface of the tray body via two second positioning parts aligned with the two first positioning parts, so as to correct the film thickness of the wafer edge in a subsequent thin film deposition process, or The edge of the upper surface of the tray body is provided with more than three first positioning parts, and the edge of the lower surface of the edge ring is provided with two second positioning parts. The edge ring is rotated to a corresponding angle according to the film thickness distribution of the wafer edge, and the edge ring is eccentrically installed on the upper surface of the tray body via the two first positioning parts aligned with the two second positioning parts, so as to correct the film thickness of the wafer edge in the subsequent thin film deposition process.

6. The wafer tray according to claim 1, wherein: The tray body is connected to a rotating mechanism for rotating the tray body according to the film thickness distribution at the edge of the wafer after the edge ring is eccentrically mounted on the upper surface of the tray body, so as to correct the film thickness at the edge of the wafer in a subsequent film deposition process.

7. The wafer tray according to claim 6, wherein: The wafer tray also includes a controller configured to: Obtaining an actual film thickness distribution and a target film thickness distribution at the edge of the wafer, and determining a deposition thickness distribution of the film deposition process on the edge of the wafer based on a difference between the actual film thickness distribution and the target film thickness distribution; According to the deposition thickness distribution, determining the direction where the maximum value is located; and The tray body is rotated to rotate the farthest end of the edge ring from the center of the tray body to the direction of the maximum value, so that the wafer edge reaches the target film thickness distribution after the film deposition process.

8. The wafer tray according to claim 1, wherein: A heating element is integrated into the tray body for heating the wafer during the thin film deposition process.

9. A thin film deposition device, characterized in that: The thin film deposition equipment comprises a process chamber, and the process chamber is provided with a wafer tray as claimed in any one of claims 1 to 8.

10. A thin film deposition method, characterized in that: The following steps are involved: Obtaining an actual film thickness distribution at an edge of a wafer and a corresponding target film thickness distribution, and determining a deposition thickness distribution of the film deposition process on the edge of the wafer based on a difference between the actual film thickness distribution and the target film thickness distribution; According to the deposition thickness distribution, determining the direction where the maximum value is located; Rotating the tray body or the edge ring of the wafer tray according to any one of claims 1 to 8, and rotating the farthest end of the edge ring from the center of the tray body to the direction where the maximum value is located; and A thin film deposition process is performed on the wafer carried by the tray body and surrounded by the edge ring, so that the edge of the wafer reaches the target film thickness distribution.

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