Optoelectronic device and manufacturing method thereof

Abstract

An optoelectronic device includes a first substrate, a second substrate, a photonic integrated circuit, and a laser diode. The second substrate is located above the first substrate. The photonic integrated circuit is disposed on the first substrate. The photonic integrated circuit includes a first waveguide channel, a second waveguide channel, and a patterned structure. The first waveguide channel and the second waveguide channel are coupled to the patterned structure. The laser diode is arranged on the second substrate and is used for emitting a light beam towards the patterned structure. Polarization-independent and better optical coupling efficiency can be achieved.

Description

Technical Field

[0001] The present disclosure relates to a photoelectric device and a manufacturing method thereof. Background Art

[0002] As process technology advances, the requirements for data transmission and computing speed increase, and semiconductor processes face the challenge of integrating more complex circuits into a unit area. However, the data transmission bandwidth in traditional electrical integrated circuits (EICs) is limited. Therefore, how to integrate optical components into electronic integrated circuits to convert electrical signals into optical signals for transmission to increase data transmission bandwidth has gradually become a focus of the industry's eager investment in R&D resources. Summary of the invention

[0003] In view of this, an object of the present disclosure is to provide a photovoltaic device and a manufacturing method thereof.

[0004] One aspect of the present disclosure is related to an optoelectronic device including a first substrate, a second substrate, a photonic integrated circuit and a laser diode. The second substrate is located above the first substrate. The photonic integrated circuit is disposed on the first substrate. The photonic integrated circuit includes a first waveguide channel, a second waveguide channel and a patterned structure. The first waveguide channel and the second waveguide channel are coupled to the patterned structure. The laser diode is disposed on the second substrate and is used to emit a light beam toward the patterned structure.

[0005] In some embodiments, a first axis of the first waveguide channel and a second axis of the second waveguide channel extend to intersect in the patterned structure.

[0006] In some embodiments, the angle between the first axis of the first waveguide channel and the second axis of the second waveguide channel is between 80 degrees and 100 degrees.

[0007] In some embodiments, the laser diode is located above the patterned structure so that a light beam emitted by the laser diode is incident perpendicularly to the first substrate.

[0008] In some embodiments, the patterned structure includes an island unit located in a central block of the patterned structure. A first axis of the first waveguide channel and a second axis of the second waveguide channel extend and intersect in the central block.

[0009] In some embodiments, the shortest diameter of any one of the island-shaped units or the distance between any two adjacent island-shaped units is smaller than the operating wavelength of the light beam.

[0010] In some embodiments, the patterned structure further comprises linear units located in diagonal blocks of the patterned structure. The diagonal blocks are located on a side of the patterned structure away from the first waveguide channel. Each of the linear units has a normal vector substantially parallel to the first axis of the first waveguide channel.

[0011] In some embodiments, the shortest diameter of any one of the line-shaped units or the distance between any two adjacent line-shaped units is smaller than the operating wavelength of the light beam.

[0012] In some embodiments, the patterned structure further includes a bifurcation unit located between the central block and the first waveguide channel. The bifurcation unit has a trunk and a branch connected to the trunk. The trunk is adjacent to the first waveguide channel. The branch is adjacent to the central block.

[0013] In some embodiments, the distance between the light outlet of the laser diode and the patterned structure is between 500 nanometers and 100 micrometers.

[0014] In some embodiments, the length of any side of the outer edge of the patterned structure is between 0.8 and 5 times the diameter of the light outlet of the laser diode.

[0015] Another aspect of the present disclosure is a method for manufacturing an optoelectronic device, including providing a first substrate. The first substrate is provided with a photonic integrated circuit. The photonic integrated circuit includes a first waveguide channel, a second waveguide channel, and a patterned structure. The first waveguide channel and the second waveguide channel are coupled to the patterned structure. The manufacturing method also includes providing a second substrate. The second substrate is provided with a laser diode. The manufacturing method also includes docking the first substrate with the second substrate so that a light outlet of the laser diode faces the patterned structure of the photonic integrated circuit.

[0016] In some embodiments, the first substrate is bonded to the second substrate so that the laser diode is located above the patterned structure of the photonic integrated circuit. The laser diode is configured to emit a light beam perpendicular to the first substrate.

[0017] In some embodiments, the patterned structure of the photonic integrated circuit includes island units disposed in a central region of the patterned structure, wherein the shortest diameter of any island unit or the distance between any two adjacent island units is smaller than the operating wavelength of the light beam emitted by the laser diode.

[0018] In some embodiments, a first axis of the first waveguide channel and a second axis of the second waveguide channel extend to intersect in the central block.

[0019] In some embodiments, the angle between the first axis of the first waveguide channel and the second axis of the second waveguide channel is between 80 degrees and 100 degrees.

[0020] In some embodiments, the island unit is used to disperse the light beam in different directions.

[0021] In some embodiments, the patterned structure further comprises linear units disposed in diagonal blocks of the patterned structure. The diagonal blocks are located on a side of the patterned structure away from the first waveguide channel. The shortest diameter of any of the linear units or the spacing between any two adjacent linear units is less than the operating wavelength of the light beam.

[0022] In some embodiments, each of the line-shaped units has a normal vector substantially parallel to the first axis of the first waveguide channel. The line-shaped unit is configured to block a light beam incident to the line-shaped unit and partially reflect the light beam to the first waveguide channel.

[0023] In some embodiments, the patterned structure further includes a bifurcation unit disposed between the central block and the first waveguide channel. The bifurcation unit has a trunk and a branch connected to the trunk. The bifurcation unit is used to receive the light beam passing through the branch and partially guide the light beam to the trunk, so that the light beam is shaped and coupled to the first waveguide channel.

[0024] In summary, in the optoelectronic device and the manufacturing method thereof disclosed herein, by docking a substrate provided with a photonic integrated circuit with a substrate provided with a laser diode, and making the photonic integrated circuit include two waveguide channels and a patterned structure that promotes light coupling, polarization independent and better light coupling efficiency can be achieved. Further, the angle between the two waveguide channels is set so that the light coupled to the two waveguide channels is substantially equal. In addition, the patterned structure is set as a sub-wavelength structure and includes units with different shapes and characteristic lengths, so that the light mode can be matched more effectively, energy loss can be reduced, and a more stable light coupling efficiency can be maintained over a wider wavelength range.

[0025] These and other aspects of the present disclosure will become apparent from the following description of preferred embodiments in conjunction with the accompanying drawings, but changes and modifications may be made therein without departing from the spirit and scope of the novel concepts of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The accompanying drawings illustrate one or more embodiments of the present disclosure and together with the written description are used to explain the principles of the present disclosure. In all drawings, the same reference numerals are used as much as possible to refer to similar or identical elements of the embodiments, wherein:

[0027] Figure 1A is a schematic three-dimensional diagram of an optoelectronic device according to some embodiments of the present disclosure.

[0028] Figure 1B for Figure 1A A partial enlarged view of .

[0029] Figure 2 According to some embodiments of the present disclosure, Figure 1A The line segment AA' shows a side view of the optoelectronic device.

[0030] Figure 3 According to some embodiments of the present disclosure, Figure 1A The line segment BB' depicts a cross-sectional view of the second substrate of the optoelectronic device.

[0031] Figure 4A and Figure 4B FIG. 4 is a top view of a first waveguide channel, a second waveguide channel, and a patterned structure of an optoelectronic device according to some embodiments of the present disclosure.

[0032] Figure 5 FIG. 4 is a graph showing the relationship between the optical coupling efficiency and the polarization angle of an optoelectronic device according to some embodiments of the present disclosure. DETAILED DESCRIPTION

[0033] The following disclosure will be more fully described herein through the accompanying drawings and reference materials, and some exemplary embodiments are depicted in the accompanying drawings. The present disclosure may be implemented in different forms and should not be limited by the embodiments mentioned below. However, these embodiments are provided to help more fully understand the content of the present disclosure and fully convey the scope of the present disclosure to those skilled in the art.

[0034] In the accompanying drawings, for the sake of clarity, the thickness of layers, films, panels, regions, etc. is magnified. Throughout the specification, the same reference numerals will refer to similar elements throughout the entire text. It should be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to another element, or an intermediate element can also exist. On the contrary, when an element is referred to as being "directly on" or "directly connected to" another element, there is no intermediate element. As used in the present disclosure, "connection" can refer to physical and / or electrical connection. Furthermore, "electrical connection" or "coupling" can be the presence of other elements between two elements.

[0035] It should be understood that although the terms "first", "second", "third", etc. can be used to describe various elements, components, regions, layers and / or parts in this disclosure, these elements, components, regions, and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, the "first element", "component", "region", "layer" or "part" discussed below can be referred to as a second element, component, region, layer or part without departing from the teaching of this disclosure.

[0036] The terms used herein are for the purpose of describing specific embodiments only and are not restrictive. As used in this disclosure, unless the content clearly indicates, the singular forms "one", "an" and "the" are intended to include plural forms, including "at least one". "Or" means "and / or". As used in this disclosure, the term "and / or" includes any and all combinations of one or more of the relevant listed items. It should also be understood that when used in this specification, the terms "include" and / or "include" specify the presence and / or parts of the features, regions, entireties, steps, operations, elements, but do not exclude the presence or addition of one or more other features, regions, entireties, steps, operations, elements, parts and / or their combinations.

[0037] The terms “about”, “approximately” or “substantially” used in the present disclosure may be used to select a more acceptable deviation range or standard deviation according to optical properties, etching properties or other properties, and may not apply one standard deviation to all properties.

[0038] Please refer to Figure 1A , which is a three-dimensional schematic diagram of an optoelectronic device 10 according to some embodiments of the present disclosure. The optoelectronic device 10 includes a first substrate 100 and a second substrate 200 that are connected to each other. Figure 1A As shown in FIG. 1 , the second substrate 200 may be disposed above the first substrate 100. A photonic integrated circuit 101 is disposed on the surface of the first substrate 100 facing the second substrate 200. A laser diode is disposed on the surface of the second substrate 200 facing the first substrate 100. The laser diode is used to emit a light beam toward the patterned structure 130. It should be understood that in order to show the relative positions between the components, Figure 1A The specific structure of the laser diode is omitted, and only the light outlet 240 of the laser diode is shown as an example. The structure of the laser diode will be described in detail in the following paragraphs with other drawings.

[0039] The photonic integrated circuit 101 on the first substrate 100 may include a first waveguide channel 110, a second waveguide channel 120 and a patterned structure 130, such as Figure 1A As shown in . The first waveguide channel 110 extends in the direction X, and the second waveguide channel 120 extends in the direction Y. The first waveguide channel 110 and the second waveguide channel 120 each have one end coupled to the patterned structure 130, and the other end of the first waveguide channel 110 and the second waveguide channel 120 can be coupled to other optical elements, such as optical fibers, but the present disclosure is not limited thereto. The patterned structure 130 includes detailed structures with different geometric and optical properties. The detailed features of the patterned structure 130 will be described in detail in the subsequent paragraphs.

[0040] like Figure 1AAs shown in , the optoelectronic device 10 further includes a pad 210, a pad 220, and a pad 230 disposed on a side of the second substrate 200 facing the first substrate 100. In some embodiments, the pad 220 and the pad 230 are electrically connected to the laser diode. In some embodiments, the pad 230 is used as an anode of the laser diode, and the pad 220 is used as a cathode of the laser diode to provide an electrical signal to drive the laser diode. In some embodiments, the pad 210 can be in a non-powered (floating) state, and is only used as a spacer together with the pad 220 and the pad 230 to maintain a fixed spacing between the first substrate 100 and the second substrate 200, and thereby adjust the distance of the light outlet 240 relative to the patterned structure 130. In some embodiments, the pad 210 can include a material different from the pad 220 and the pad 230.

[0041] Please refer to Figure 1B , which is Figure 1A A partial enlarged view of the Figure 1B As shown in , the light outlet 240 is located directly above the patterned structure 130 (for example, the central axis of the light outlet 240 is substantially aligned with the center position of the patterned structure 130). The light outlet 240 has a diameter D. The laser diode emits a light beam L1 toward the patterned structure 130 through the light outlet 240. The light beam L1 is deflected and dispersed by the detailed structure of the patterned structure 130 to form a light beam L2 and a light beam L3 that are coupled to the first waveguide channel 110 and the second waveguide channel 120 respectively. In some embodiments, the outer edge of the entire patterned structure 130 is approximately a quadrilateral, such as Figure 1B As shown in . The length of any side of the outer edge of the quadrilateral (such as the side length S1 and the side length S2 ) is between 0.8 times and 5 times the diameter D of the light outlet 240 of the laser diode.

[0042] Please refer to Figure 2 , which illustrates a method according to some embodiments of the present disclosure. Figure 1A The side view of the photovoltaic device 10 along the line segment AA' is shown. Figure 2 As shown in , the pads 210, 220, and 230 are located between the first substrate 100 and the second substrate 200 to separate the two. In some embodiments, the pads 210, 220, and 230 located on the second substrate 200 can be respectively bonded to the pads of the first substrate 100 through solder bumps 260. For example, the thickness of the solder bump 260 is such that the spacing G1 between the light outlet 240 and the patterned structure 130 along the direction Z is between 500 nanometers and 100 micrometers. In some embodiments, the optoelectronic device 10 may further include a dielectric layer (not shown) located between the first substrate 100 and the second substrate 200 and covering each pad to protect the connection.

[0043] Please refer to Figure 3 , which is along the lines of some embodiments according to the present disclosure Figure 1A The line segment BB' of the optoelectronic device is a partial cross-sectional view of the second substrate 200. As mentioned above, the laser diode 250 is disposed on the side of the second substrate 200 facing the first substrate 100. For the sake of clarity, Figure 3 In the figure, the second substrate 200 is shown at the bottom, and the light outlet 240 of the laser diode 250 is arranged upward. Figure 3 As shown in , the laser diode 250 can be a laser element such as a vertical cavity surface emitting laser (VCSEL) or a laser element that directs the light beam direction to the first substrate 100 through a secondary optical structure so that it has the same light transmission mode. The laser diode 250 includes a first reflective layer 251, a second reflective layer 252, and a light emitting layer 253 located between the first reflective layer 251 and the second reflective layer 252. In some embodiments, the first reflective layer 251 and the second reflective layer 252 respectively include a plurality of compound semiconductor materials stacked to form different types of distributed Bragg reflectors (DBR). The first reflective layer 251 is coupled to the pad 220 used as a cathode, and the second reflective layer 252 is coupled to the pad 230 used as an anode. In some embodiments, the light emitting layer 253 is a multiple quantum well structure (multiple quantumwell, MQW). In some embodiments, the first reflective layer 251, the second reflective layer 252, and the light emitting layer 253 may include the same material, and may be doped with different types or concentrations of dopants to have different electrical properties. Figure 3 As shown in , the pad 230 can be surrounded to define a light outlet 240. The light outlet 240 has a diameter D. It is worth noting that Figure 3 The pads 210, 220 and 230 shown in the figure can be respectively Figure 1A and Figure 2 The pad 210, the pad 220 and the pad 230 extend from the pad 210, so the three can have different relative positional relationships, for example Figure 3 The top surface height of the middle pad 230 may be higher than the top surface heights of the pads 220 and 230. In other embodiments, the laser diode 250 may be a laser element formed based on the prior art and used to emit a light beam perpendicular to the first substrate 100, but the present disclosure is not limited thereto.

[0044] Please refer to Figure 4A and Figure 4B, which is a top view of the first waveguide channel 110, the second waveguide channel 120 and the patterned structure 130 according to some embodiments of the present disclosure. Figure 4A and Figure 4B The first waveguide channel 110, the second waveguide channel 120 and the patterned structure 130 shown in the figure are the same, but for the sake of clarity, different auxiliary lines are drawn for illustration.

[0045] As mentioned above, the patterned structure 130 has an outer edge that is approximately a quadrilateral. Figure 4A As shown in FIG. 1 , the first waveguide channel 110 and the second waveguide channel 120 extend into the quadrilateral outer edge of the patterned structure 130 and are coupled to the patterned structure 130 .

[0046] Specifically, the patterned structure 130 has a central block CA, a diagonal block DA1, and a diagonal block DA2. The central block CA is located at the center of the outer edge of the quadrilateral of the patterned structure 130. The diagonal blocks DA1 and DA2 are located at two diagonal corners of the outer edge of the quadrilateral. The diagonal block DA1 is located on the side of the patterned structure 130 away from the second waveguide channel 120. The diagonal block DA2 is located on the side of the patterned structure 130 away from the first waveguide channel 110. Figure 4A , the diagonal block DA1 and the diagonal block DA2 are substantially symmetrical. The first axis A1 of the first waveguide channel 110 and the second axis A2 of the second waveguide channel 120 extend and intersect in the central block CA of the patterned structure 130 and form an angle θ. In some embodiments, the angle θ is between 80 degrees and 100 degrees. For example, the angle θ can be substantially 90 degrees, in which case, the light beams coupled to the first waveguide channel 110 and the second waveguide channel 120 are substantially equal. In addition, the first axis A1 of the first waveguide channel 110 extends in the direction of the diagonal block DA2, and the second axis A2 of the second waveguide channel 120 extends in the direction of the diagonal block DA1.

[0047] Please refer to Figure 4B The patterned structure 130 includes units with different shapes and characteristic lengths, such as an island unit 131, a bifurcated unit 132, a linear unit 133, and a separation unit 134. These units are located in different blocks of the patterned structure 130 and have different light-guiding properties. In some embodiments, these units can be achieved by inverse design based on the optical coupling properties that the optoelectronic device 10 is intended to achieve.

[0048] In addition, in some embodiments, the shortest diameter of any pattern in these units or the pitch between any two adjacent units is smaller than the operating wavelength of the light beam emitted by the laser diode. Taking the present embodiment as an example, if the operating wavelength of the light beam is 1300 nanometers, the shortest diameter of any pattern in the unit or the pitch between two adjacent units can be designed to be smaller than 1 / 2 of the operating wavelength, such as smaller than 650 nanometers. However, the present disclosure is not limited to this, and a value between 150 nanometers and 300 nanometers can be selected as needed. Further, the patterned structure 130 is a subwavelength structure. The subwavelength structure can more effectively match the mode of light, reduce reflection and scattering, and thus reduce energy loss during the light coupling process. In addition, the subwavelength structure can maintain a higher light coupling efficiency over a wider wavelength range. This is very important for multi-wavelength or wide spectrum applications, and can ensure that the component has stable performance at various wavelengths. For example, according to Figure 4B The 1 dB bandwidth of the formed patterned structure 130 exceeds 20 nm.

[0049] Specifically, if Figure 4B As shown in , the patterned structure 130 includes an island unit 131 in the central block CA. The island unit 131 has a contour that is approximately circular. In other words, the characteristic lengths of the island unit 131 in, for example, directions X and Y are similar. In some embodiments, the arrangement between the island units 131 can be periodic, quasi-periodic, or non-periodic. In addition, as mentioned above, in the central block CA, the shortest diameter D1 of any pattern in the island unit 131 or the spacing P1 between any two adjacent ones is less than the working wavelength of the light beam.

[0050] like Figure 4BAs shown in , the patterned structure 130 includes a bifurcated unit 132 between the central block CA and the waveguide channel (the first waveguide channel 110 or the second waveguide channel 120). The bifurcated unit 132 has a trunk and a branch connected to the trunk. One end of the trunk faces the waveguide channel, and the other end faces the central block CA. The direction of the branch is staggered with the direction of the trunk. For example, the bifurcated unit 132-1 has a trunk 132a and two branches 132b connected to the trunk. Among them, one end of the trunk 132a faces the second waveguide channel 120, and the other end faces the central block CA. The two branches 132b are adjacent to the central block CA and their directions are staggered with the direction of the trunk 132a, forming a unit similar to a Y shape. On the other hand, the bifurcated unit 132-2 has a trunk 132c, two branches 132d connected to the trunk and adjacent to the second waveguide channel 120, and a branch 132e connected to the trunk and adjacent to the central block CA. Similarly, the directions of the branch 132d and the branch 132e are staggered with the main trunk 132c.

[0051] like Figure 4B As shown in FIG. 1 , the patterned structure 130 includes linear units 133 in the diagonal blocks DA1 and DA2. The linear units 133 have a substantially long strip-shaped profile. In other words, the characteristic lengths of the linear units 133 in the direction X and the direction Y are significantly different. For example, the characteristic length of the linear units 133 in the diagonal blocks DA1 in the direction X is at least twice the characteristic length in the direction Y. In addition, please also refer to FIG. Figure 4A and Figure 4B , each linear unit 133 in the diagonal block DA1 has a normal vector n1 substantially parallel to the second axis A2 of the second waveguide channel 120, and each linear unit 133 in the diagonal block DA2 has a normal vector n2 substantially parallel to the first axis A1 of the first waveguide channel 110. In some embodiments, the angle between the normal vector n1 and the normal vector n2 is between 80 degrees and 100 degrees. In addition, as mentioned above, the shortest diameter D2 of any pattern of the linear units 133 in the diagonal block DA1 and the diagonal block DA2 or the spacing P2 between any two adjacent ones is less than the working wavelength of the light beam.

[0052] like Figure 4B As shown in FIG. 1 , the patterned structure 130 includes a partition unit 134 located between the first waveguide channel 110 and the second waveguide channel 120, and located between the two waveguide channels and the central block CA. In some embodiments, the angles between the directions of the partition unit 134 and the axes of the two waveguide channels are respectively between 40 degrees and 50 degrees.

[0053] In some embodiments, Figure 4BAs shown in FIG, there is a transition zone between two adjacent blocks of the patterned structure 130. The unit characteristics in one block gradually change into the unit characteristics in another block through the transition zone. Therefore, the unit located in the transition zone can have some of the light-guiding characteristics of the units in the two adjacent blocks at the same time. For example, Figure 4B The units located between the central block CA and the diagonal block DA1 have an irregular profile (e.g., a sawtooth-like profile) formed by combining the approximately circular profile of the island-shaped unit 131 and the approximately long strip-shaped profile of the linear unit 133. These units have the function of dispersing incident light, blocking and reflecting incident light.

[0054] By setting units with different shapes and characteristic lengths to disperse, block or guide the light beam, the patterned structure 130 can improve the efficiency of coupling the incident light beam to the two waveguide channels. Specifically, when the laser diode emits a light beam, since the light outlet 240 is located directly above the patterned structure 130, the light beam will first be received by the central block CA, and the island unit 131 in the central block CA is used to turn the light beam and disperse it in different directions. For example, the light beam dispersed in the positive direction Y, the negative direction X, the negative direction Y and the positive direction X are used as examples for explanation. After the first part of the light beam is turned by the island unit 131, it is transmitted along the positive direction Y toward the second waveguide channel 120. Then, the forked unit 132-1 and the forked unit 132-2 receive the first part of the light beam through the branch adjacent to the central block CA, guide it to the main trunk and the branch adjacent to the first waveguide channel 110, perform beam shaping, and couple the shaped light beam to the second waveguide channel 120. Similarly, the second part of the light beam is coupled to the first waveguide channel 110 in the negative direction along the direction X. On the other hand, after the third part of the light beam is deflected by the island unit 131, it is transmitted toward the diagonal block DA1 in the negative direction along the direction Y. Then, the linear unit 133 of the diagonal block DA1 blocks the third part of the light beam to prevent light leakage. Since the normal vector n1 of the linear unit 133 of the diagonal block DA1 is substantially parallel to the second axis A2 of the second waveguide channel 120, the third part of the light beam may be partially reflected and transmitted toward the second waveguide channel 120 through the central block CA again, and then is also shaped and coupled to the second waveguide channel 120 by the bifurcated unit 132. Similarly, the fourth part of the light beam is transmitted in the positive direction along the direction X, is blocked and partially reflected toward the first waveguide channel 110 by the linear unit 133 of the diagonal block DA2, and is then shaped and coupled to the first waveguide channel 110 by the bifurcated unit 132. During the light transmission and coupling process, the separation unit 134 is used to prevent the light directed to the first waveguide channel 110 and the light directed to the second waveguide channel 120 from interfering with each other.

[0055] Please refer to Figure 5, which is a graph showing the relationship between the optical coupling efficiency and the polarization angle of the optoelectronic device 10 according to some embodiments of the present disclosure. Figure 5 As shown in , the thin solid line represents the optical coupling efficiency of the first waveguide channel 110, the dotted line represents the optical coupling efficiency of the second waveguide channel 120, and the thick solid line represents the sum of the optical coupling efficiencies of the two waveguide channels. It can be seen that in the embodiment where the angle θ is substantially 90 degrees, the sum of the optical coupling efficiencies of the first waveguide channel 110 and the second waveguide channel 120 can reach similar values ​​when the light beams have different polarization angles. Therefore, the optoelectronic device 10 of some embodiments of the present disclosure can achieve polarization independent and higher optical coupling efficiency.

[0056] The following paragraphs describe methods for fabricating optoelectronic devices according to some embodiments of the present disclosure.

[0057] First, a first substrate is provided. As described above, a photonic integrated circuit is provided on one side of the first substrate. The photonic integrated circuit includes a first waveguide channel, a second waveguide channel, and a patterned structure. In some embodiments, the first waveguide channel, the second waveguide channel, and the patterned structure are formed by the same etching process. The first waveguide channel and the second waveguide channel are coupled to the patterned structure. In some embodiments, the first axis of the first waveguide channel and the second axis of the second waveguide channel extend and intersect in the patterned structure. In some embodiments, the angle between the first axis of the first waveguide channel and the second axis of the second waveguide channel is between 80 degrees and 100 degrees. In some embodiments, the patterned structure has the detailed features described above. In some embodiments, the patterned structure is a sub-wavelength structure.

[0058] Next, a second substrate is provided. The second substrate is provided with a laser diode and a pad electrically connected to the laser diode. In some embodiments, the laser diode may be a vertical cavity surface emitting laser (VCSEL) element. In other embodiments, the laser diode may be a laser element formed based on the prior art, but the present disclosure is not limited thereto.

[0059] Next, the first substrate is docked with the second substrate so that the light outlet of the laser diode faces the patterned structure of the photonic integrated circuit, thereby forming the optoelectronic device disclosed herein. In some embodiments, docking the first substrate with the second substrate includes flipping the second substrate or the first substrate so that the side of the first substrate provided with the photonic integrated circuit faces the side of the second substrate where the light outlet is located. In some embodiments, docking the first substrate with the second substrate also allows the laser diode to be located directly above the patterned structure of the photonic integrated circuit, for example, so that the center axis of the light outlet of the laser diode is substantially aligned with the center position of the patterned structure, and the tolerance is within 1 micron. The laser diode is used to emit a light beam perpendicular to the first substrate. The patterned structure is used to couple the light beam emitted by the laser diode to the first waveguide channel and the second waveguide channel.

[0060] From the above detailed description of the specific embodiments of the present disclosure, it can be clearly seen that in the optoelectronic device and the manufacturing method thereof disclosed in the present disclosure, by docking a substrate provided with a photonic integrated circuit with a substrate provided with a laser diode, and making the photonic integrated circuit include two waveguide channels and a patterned structure that promotes light coupling, polarization-independent and better light coupling efficiency can be achieved. Further, the angle between the two waveguide channels is set so that the light coupled to the two waveguide channels is substantially equal. In addition, the patterned structure is set as a sub-wavelength structure and includes units with different shapes and characteristic lengths, so that the light mode can be more effectively matched, energy loss can be reduced, and a more stable light coupling efficiency can be maintained over a wider wavelength range.

[0061] The foregoing description is provided only to illustrate and describe exemplary embodiments of the present disclosure and is not intended to be exhaustive or to limit the precise forms of the invention disclosed in the present disclosure. The above teachings may be modified or varied.

[0062] The embodiments selected and described are intended to explain the content of the present disclosure and their practical applications so as to inspire other persons skilled in the art to utilize the present disclosure and various embodiments, and to make various modifications to meet the specific intended use. Alternative embodiments will be apparent to those skilled in the art without departing from the spirit and scope of the present disclosure. Therefore, the scope of the present disclosure is determined according to the appended claims, rather than being limited by the foregoing specification and the exemplary embodiments described therein.

[0063]

Explanation of symbols

[0064] 10: Photoelectric device

[0065] 100: first substrate

[0066] 101: Photonic Integrated Circuits

[0067] 110: First waveguide channel

[0068] 120: Second waveguide channel

[0069] 130: Patterned structure

[0070] 131: Island unit

[0071] 132,132-1,132-2: Bifurcation Unit

[0072] 132a,132c: Trunk

[0073] 132b,132d,132e: branches

[0074] 133: Linear unit

[0075] 134:Separation unit

[0076] 200: Second substrate

[0077] 210,220,230: pads

[0078] 240:Light outlet

[0079] 250: Laser diode

[0080] 251: first reflection layer

[0081] 252: Second reflection layer

[0082] 253: Luminous layer

[0083] 260: Solder ball bump

[0084] A-A',B-B': line segment

[0085] A1: First axis

[0086] A2: Second axis

[0087] CA: Central Block

[0088] D: Diameter

[0089] D1, D2: shortest diameter

[0090] DA1, DA2: diagonal blocks

[0091] G1: Spacing

[0092] L1, L2, L3: beam

[0093] n1,n2: normal vector

[0094] P1, P2: Spacing

[0095] S1,S2: side length

[0096] X,Y,Z: Direction

[0097] θ: angle.

Claims

1. A photoelectric device, characterized in that: Include: a first substrate; The second substrate is located above the first substrate; A photonic integrated circuit is disposed on the first substrate and comprises a first waveguide channel, a second waveguide channel and a patterned structure, wherein the first waveguide channel and the second waveguide channel are coupled to the patterned structure; as well as The laser diode is disposed on the second substrate and is used to emit a light beam toward the patterned structure.

2. The optoelectronic device according to claim 1, characterized in that: A first axis of the first waveguide channel and a second axis of the second waveguide channel extend and intersect in the patterned structure.

3. The optoelectronic device according to claim 2, characterized in that: An angle between the first axis of the first waveguide channel and the second axis of the second waveguide channel is between 80 degrees and 100 degrees.

4. The optoelectronic device according to claim 1, characterized in that: The laser diode is located above the patterned structure so that the light beam emitted by the laser diode is incident perpendicularly to the first substrate.

5. The optoelectronic device according to claim 1, characterized in that: The patterned structure includes a plurality of island-shaped units located in a central block of the patterned structure, and a first axis of the first waveguide channel and a second axis of the second waveguide channel extend and intersect in the central block.

6. The optoelectronic device according to claim 5, characterized in that: The shortest diameter of any one of the plurality of island-shaped units or the distance between any two adjacent ones of the plurality of island-shaped units is smaller than the working wavelength of the light beam.

7. The optoelectronic device according to claim 5, characterized in that: The patterned structure further includes a bifurcation unit located between the central block and the first waveguide channel, wherein the bifurcation unit has a trunk and a branch connected to the trunk, the trunk is adjacent to the first waveguide channel, and the branch is adjacent to the central block.

8. The optoelectronic device according to claim 1, characterized in that: The patterned structure includes a plurality of linear units located in a diagonal block of the patterned structure, wherein the diagonal block is located at a side of the patterned structure away from the first waveguide channel, and each of the plurality of linear units has a normal vector substantially parallel to a first axis of the first waveguide channel.

9. The optoelectronic device according to claim 8, characterized in that: The shortest diameter of any one of the plurality of linear units or the distance between any two adjacent ones of the plurality of linear units is smaller than the operating wavelength of the light beam.

10. The optoelectronic device according to claim 1, characterized in that: The distance between the light outlet of the laser diode and the patterned structure is between 500 nanometers and 100 micrometers.

11. The optoelectronic device according to claim 1, characterized in that: The length of any side of the outer edge of the patterned structure is between 0.8 times and 5 times the diameter of the light outlet of the laser diode.

12. A method for manufacturing a photoelectric device, characterized in that: Include: Providing a first substrate, wherein the first substrate is provided with a photonic integrated circuit, the photonic integrated circuit comprises a first waveguide channel, a second waveguide channel and a patterned structure, and the first waveguide channel and the second waveguide channel are coupled to the patterned structure; providing a second substrate, wherein the second substrate is provided with a laser diode; and The first substrate is butted against the second substrate so that the light outlet of the laser diode faces the patterned structure of the photonic integrated circuit.

13. The manufacturing method according to claim 12, characterized in that: The first substrate and the second substrate are butted together so that the laser diode is located above the patterned structure of the photonic integrated circuit, and the laser diode is used to emit a light beam perpendicular to the first substrate.

14. The manufacturing method according to claim 12, characterized in that: The patterned structure of the photonic integrated circuit includes a plurality of island units arranged in a central block of the patterned structure, and the shortest diameter of any one of the plurality of island units or the spacing between any two adjacent ones of the plurality of island units is smaller than the working wavelength of the light beam emitted by the laser diode.

15. The manufacturing method according to claim 14, characterized in that: A first axis of the first waveguide channel and a second axis of the second waveguide channel extend and intersect in the central block.

16. The manufacturing method according to claim 15, characterized in that: An angle between the first axis of the first waveguide channel and the second axis of the second waveguide channel is between 80 degrees and 100 degrees.

17. The manufacturing method according to claim 14, characterized in that: The plurality of island-shaped units are used to disperse the light beam in a plurality of different directions.

18. The manufacturing method according to claim 14, characterized in that: The patterned structure further includes a bifurcation unit disposed between the central block and the first waveguide channel, the bifurcation unit having a trunk and a branch connected to the trunk, and the bifurcation unit is used to receive the light beam passing through the branch and partially guide the light beam to the trunk so that the light beam is shaped and coupled to the first waveguide channel.

19. The manufacturing method according to claim 12, characterized in that: The patterned structure includes a plurality of linear units arranged in diagonal blocks of the patterned structure, wherein the diagonal blocks are located on a side of the patterned structure away from the first waveguide channel, and the shortest diameter of any one of the plurality of linear units or the spacing between any two adjacent ones of the plurality of linear units is smaller than the working wavelength of the light beam emitted by the laser diode.

20. The manufacturing method according to claim 19, characterized in that: Each of the plurality of line-shaped units has a normal vector substantially parallel to a first axis of the first waveguide channel, and is used to block the light beam incident to the plurality of line-shaped units and partially reflect the light beam to the first waveguide channel.

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