Low-leakage rectification circuit, rectifier and wearable implantable device

Abstract

The invention discloses a low-leakage rectification circuit, a rectifier and wearable implantable equipment. The low-leakage rectifying circuit comprises a voltage input end used for being connected with an output end of an external power supply; the input end of the differential rectification circuit is connected with the voltage input end, and the differential rectification circuit is used for carrying out differential rectification on alternating current output by an external power supply and then outputting direct current; the input end of the leakage current suppression circuit is connected with the output end of the differential rectification circuit; the voltage output end is connected with the output end of the leakage current suppression circuit, the voltage output end is used for being connected with an electric device, and the leakage current suppression circuit is used for outputting the direct current output by the differential rectification circuit to the electric device through the voltage output end; the leakage current suppression circuit is also used for suppressing leakage current between the voltage output end and the differential rectification circuit. The invention aims to reduce the leakage current generated when the rectifying circuit works.

Description

Technical Field

[0001] The present invention relates to the field of rectification, and in particular to a low leakage rectification circuit, a rectifier and a wearable implantable device. Background Art

[0002] With the miniaturization trend of wearable and implantable nodes and their distributed application needs, sustainable on-chip energy supply has become one of the urgent problems to be solved. Due to its miniaturization and special application environment, traditional battery-powered solutions may have some shortcomings. On the one hand, the traditional battery-powered solution requires the battery and circuit board to be integrated together, which makes the size of the entire system large and difficult to apply to miniaturized devices; on the other hand, the previous battery-powered solution requires the battery to be replaced or charged on a regular basis, which is particularly difficult in implantable devices. In order to solve these problems, a triboelectric nanogenerator (TENG) that combines the triboelectric effect and electrostatic induction can be used to effectively utilize the discrete energy generated by the environment and the human body to power the on-chip system.

[0003] For the alternating current generated by TENG, a rectifier is usually used to convert the alternating current into direct current. When the rectifier is working, there will be a reverse leakage current from the output to the input and a leakage current from the output directly to the ground. Both leakages will reduce the rectification efficiency of the rectifier. In the past work, traditional rectifiers or differential rectifiers were usually used. These rectifiers have large leakage in this case, which seriously affects the rectification efficiency of the rectifier. Summary of the invention

[0004] In view of the above-mentioned deficiencies in the prior art, an object of the present invention is to provide a low leakage rectifier circuit, a rectifier and a wearable implantable device, aiming to reduce the leakage current generated when the rectifier circuit is working.

[0005] The technical solution of the present invention is as follows:

[0006] A low leakage rectifier circuit, comprising:

[0007] Voltage input terminal, used to connect to the output terminal of an external power supply;

[0008] A differential rectifier circuit, the input end of the differential rectifier circuit is connected to the voltage input end, and the differential rectifier circuit is used to perform differential rectification on the AC current output by the external power supply and then output DC power;

[0009] a leakage current suppression circuit, wherein an input end of the leakage current suppression circuit is connected to an output end of the differential rectification circuit;

[0010] A voltage output terminal connected to the output terminal of the leakage current suppression circuit, the voltage output terminal is used to connect an electrical device, and the leakage current suppression circuit is used to output the direct current output by the differential rectification circuit to the electrical device through the voltage output terminal;

[0011] The leakage current suppression circuit is also used to suppress the leakage current between the voltage output terminal and the differential rectification circuit.

[0012] Optionally, the external power supply has a positive output terminal and a negative output terminal, and the voltage input terminal includes a first input terminal and a second input terminal, the first input terminal is used to connect to the positive output terminal of the external power supply, and the second input terminal is used to connect to the negative output terminal of the external power supply.

[0013] Optionally, the differential rectification circuit includes a first differential input terminal and a second differential input terminal, the first differential input terminal is connected to the second input terminal of the voltage input terminal, and the second differential input terminal is connected to the first input terminal of the voltage input terminal.

[0014] Optionally, the differential rectification circuit includes a first NMOS tube, a second NMOS tube, a first PMOS tube and a second PMOS tube, the gate of the first NMOS tube and the gate of the first PMOS tube are connected to the second differential input terminal, the source of the first NMOS tube and the source of the second NMOS tube are grounded, the drain of the first NMOS tube is connected to the source of the first PMOS tube and to the first differential input terminal, the drain of the first PMOS tube and the drain of the second PMOS tube are the output terminal of the differential rectification circuit, the gate of the second NMOS tube and the gate of the second PMOS tube are connected to the first differential input terminal, and the drain of the second NMOS tube is connected to the source of the second PMOS tube and to the second differential input terminal.

[0015] Optionally, the leakage current suppression circuit includes a third NMOS tube and a fourth NMOS tube, the gate of the third NMOS tube is connected to the first differential input terminal, the source of the third NMOS tube and the source of the fourth NMOS tube are connected to the voltage output terminal, the drain of the third NMOS tube is connected to the drain of the first PMOS tube, the gate of the fourth NMOS tube is connected to the second differential input terminal, and the drain of the fourth NMOS tube is connected to the drain of the second PMOS tube.

[0016] Optionally, the leakage current suppression circuit includes a third PMOS tube and a fourth PMOS tube, the gate of the third PMOS tube and the drain of the third PMOS tube are connected to the voltage output end, the source of the third PMOS tube is connected to the drain of the first PMOS tube, the gate of the fourth PMOS tube and the drain of the fourth PMOS tube are connected to the voltage output end, and the source of the fourth PMOS tube is connected to the drain of the second PMOS tube.

[0017] The present invention also provides a rectifier, comprising the low leakage rectifier circuit as described above.

[0018] Optionally, the rectifier further includes:

[0019] A housing is formed with a housing cavity, and the low leakage rectifier circuit is accommodated in the housing.

[0020] The present invention also provides a wearable implantable device, comprising a power supply and the rectifier as described above, wherein the output end of the power supply is connected to the voltage input end of the low leakage rectification circuit in the rectifier.

[0021] Optionally, the power source is a friction nanogenerator.

[0022] The technical solution of the present invention is to form a low leakage rectifier circuit through a voltage input terminal, a differential rectifier circuit, a leakage current suppression circuit and a voltage output terminal, wherein the voltage input terminal is used to connect the output terminal of an external power supply; the input terminal of the differential rectifier circuit is connected to the voltage input terminal, and the differential rectifier circuit is used to output direct current after differential rectification of the alternating current output by the external power supply; the input terminal of the leakage current suppression circuit is connected to the output terminal of the differential rectifier circuit; the voltage output terminal is connected to the output terminal of the leakage current suppression circuit, and the voltage output terminal can be used to connect an electrical device, and the leakage current suppression circuit is used to output the direct current output by the differential rectifier circuit to the electrical device through the voltage output terminal; the leakage current suppression circuit can also be used to suppress the leakage current between the voltage output terminal and the differential rectifier circuit. In this way, the present invention can reduce the leakage current when the input voltage of the external power supply is less than the voltage of the voltage output terminal and when the input voltage is zero by setting a leakage current suppression circuit between the voltage output terminal and the differential rectifier circuit, thereby extending the energy storage time and increasing the rectification efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary personnel in this field, other drawings can be obtained based on the structures shown in these drawings without paying any creative work.

[0024] Figure 1 It is a functional module diagram of an embodiment of a low leakage rectifier circuit of the present invention.

[0025] Figure 2 It is a circuit structure diagram of an embodiment of a low leakage rectifier circuit of the present invention.

[0026] Figure 3 1 is an input and output voltage and current curve diagram of a low leakage rectifier circuit according to an embodiment of the present invention.

[0027] Figure 4 It is a comparison curve of the ground leakage of the low leakage rectifier circuit of the present invention and other rectifier bridges.

[0028] Figure 5 It is a conduction comparison curve diagram of the low leakage rectifier circuit of the present invention and other rectifier bridges. DETAILED DESCRIPTION

[0029] In order to make the purpose, technical solution and effect of the present invention clearer and more specific, the present invention is further described in detail with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0030] In the embodiments and the scope of the patent application, unless the text specifically defines the article, "a", "an", "the" and "the" may also include plural forms. If there are descriptions involving "first", "second", etc. in the embodiments of the present invention, the descriptions of "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" or "second" may explicitly or implicitly include at least one of the features.

[0031] It should be further understood that the term "comprising" used in the specification of the present invention refers to the presence of the features, integers, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups thereof. It should be understood that when an element is said to be "connected" or "coupled" to another element, it can be directly connected or coupled to the other element, or there can also be intermediate elements. In addition, the "connection" or "coupling" used herein can include wireless connection or wireless coupling. The term "and / or" used herein includes all or any unit and all combinations of one or more associated listed items.

[0032] It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as generally understood by those skilled in the art in the art to which the present invention belongs. It should also be understood that terms such as those defined in general dictionaries should be understood to have meanings consistent with the meanings in the context of the prior art, and will not be interpreted with idealized or overly formal meanings unless specifically defined as herein.

[0033] In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on the fact that ordinary technicians in the field can implement it. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0034] The Internet of Things (IoT) connects various sensors and life devices through the Internet to form a huge intelligent network, thereby realizing various applications such as human-machine interconnection, intelligent life, and health care. Through the Internet of Things, the information collected by different sensors can be summarized to achieve information sharing and processing, making various physical devices more intelligent and automated, and facilitating remote control and data transmission. With the rapid development of the semiconductor industry and communication technology, the Internet of Things has gradually combined with wearable and implantable devices, and the Medical Internet of Things has gradually entered daily life. The emergence of the Medical Internet of Things has changed the traditional model in the medical field. Wearable and implantable sensor devices can help doctors and medical institutions better manage and monitor the health of patients, improve medical efficiency and quality, and reduce medical costs.

[0035] With the miniaturization trend of wearable and implantable nodes and their distributed application needs, sustainable on-chip energy supply has become one of the urgent problems to be solved. Due to its miniaturization and special application environment, traditional battery-powered solutions may have some shortcomings. On the one hand, the traditional battery-powered solution requires the battery and circuit board to be integrated together, which makes the size of the entire system large and difficult to apply to miniaturized devices; on the other hand, the previous battery-powered solution requires the battery to be replaced or charged on a regular basis, which is particularly difficult in implantable devices. In order to solve these problems, researchers began to explore some new on-chip energy supply methods. The triboelectric nanogenerator (TENG), which combines the triboelectric effect and electrostatic induction, can effectively utilize the discrete energy generated by the environment and the human body to power the on-chip system.

[0036] For the alternating current generated by TENG, a rectifier is usually used to convert the alternating current into direct current. When the rectifier is working, there will be two types of leakage: 1) When the rectifier is working normally, the output voltage is higher than the input voltage, which will cause a reverse leakage current from the output to the input, which will affect the energy collection; 2) Due to the uncertainty of human body movement / limb activity, the energy collected is mostly sparse energy. When the human body is in a static state, there is a leakage current from the output directly to the ground when the input voltage is zero. Both leakages will reduce the rectification efficiency of the rectifier. In the past work, traditional rectifiers or differential rectifiers were usually used. These rectifiers have large leakage in this case, which seriously affects the rectifier efficiency of the rectifier. By connecting more transistors in series on the traditional rectifier bridge to form a dynamic leakage suppression full-bridge rectifier, the leakage can be reduced, but the conduction loss will also increase. And because the output energy during the TENG for the human body is at the nW level, this has a great limitation on the dynamic power consumption of the rectifier.

[0037] In order to solve the above problems, the present invention provides a low leakage rectifier circuit.

[0038] Reference Figure 1 In one embodiment, the low leakage rectifier circuit includes:

[0039] A voltage input terminal 10, used to connect to the output terminal of an external power source;

[0040] A differential rectifier circuit 20, wherein the input end of the differential rectifier circuit 20 is connected to the voltage input end 10, and the differential rectifier circuit 20 is used to perform differential rectification on the AC current output by the external power supply and then output DC power;

[0041] A leakage current suppression circuit 30, wherein an input end of the leakage current suppression circuit 30 is connected to an output end of the differential rectification circuit 20;

[0042] A voltage output terminal 40 connected to the output terminal of the leakage current suppression circuit 30, the voltage output terminal 40 is used to connect to an electrical device, and the leakage current suppression circuit 30 is used to output the direct current output by the differential rectification circuit 20 to the electrical device through the voltage output terminal 40;

[0043] The leakage current suppression circuit 30 is further used to suppress the leakage current between the voltage output terminal 40 and the differential rectification circuit 20 .

[0044] In this embodiment, the external power source connected to the voltage input terminal 10 can be a friction nanogenerator, and the differential rectification circuit 20 can be composed of multiple transistors, such as MOS tubes and triodes. Taking MOS tubes as an example, they can be two NMOS tubes and two PMOS tubes. One NMOS tube and one PMOS tube are a group. The positive and negative poles of the external power source are cross-connected to the gates of an NMOS and a PMOS respectively to form a differential rectification circuit 20; the differential rectification circuit 20 can perform differential rectification on the alternating current output by the external power source, and output it to the electrical device through the voltage output terminal 40 after converting it into direct current. The electrical device connected to the voltage output terminal 40 can be a sensor and peripheral device in a wearable implantable device. It should be noted that when the input voltage of the external power source is less than the voltage of the voltage output terminal 40, only setting the differential rectification circuit 20 will have a large reverse leakage current, and when the input voltage is zero, there will be a ground current from the voltage output terminal 40 to the ground. This part of the current will reduce the rectification efficiency and reduce the output voltage. Therefore, in this embodiment, a leakage current suppression circuit 30 is provided between the voltage output terminal 40 and the differential rectification circuit 20, which can reduce the leakage current in both cases. For example, the leakage current suppression circuit 30 is provided as a MOS tube. When the input voltage is less than the voltage of the voltage output terminal 40, the MOS tube is turned off to turn off the forward conduction circuit, which can greatly suppress the reverse leakage current. When the input voltage is zero, the MOS tube is also completely turned off, which can also greatly suppress the leakage to the ground when the human body is stationary and zero input, prolong the energy storage time, and increase the rectification efficiency. The specific type of the MOS tube can be selected according to the specific circuit structure of the differential rectification circuit 20 and the actual situation.

[0045] The technical solution of the present invention constitutes a low leakage rectifier circuit through a voltage input terminal 10, a differential rectifier circuit 20, a leakage current suppression circuit 30 and a voltage output terminal 40, wherein the voltage input terminal 10 is used to connect the output terminal of an external power supply; the input terminal of the differential rectifier circuit 20 is connected to the voltage input terminal 10, and the differential rectifier circuit 20 is used to output direct current after differential rectification of the alternating current output by the external power supply; the input terminal of the leakage current suppression circuit 30 is connected to the output terminal of the differential rectifier circuit 20; the voltage output terminal 40 is connected to the output terminal of the leakage current suppression circuit 30, the voltage output terminal 40 can be used to connect electrical devices, and the leakage current suppression circuit 30 is used to output the direct current output by the differential rectifier circuit 20 to the electrical devices through the voltage output terminal 40; the leakage current suppression circuit 30 can also be used to suppress the leakage current between the voltage output terminal 40 and the differential rectifier circuit 20. In this way, the present invention can reduce the leakage current when the input voltage of the external power supply is less than the voltage of the voltage output terminal 40 and when the input voltage is zero by setting the leakage current suppression circuit 30 between the voltage output terminal 40 and the differential rectification circuit 20, thereby extending the energy preservation time and increasing the rectification efficiency.

[0046] Reference Figure 2 In one embodiment, the external power supply has a positive output terminal and a negative output terminal, and the voltage input terminal 10 includes a first input terminal and a second input terminal, the first input terminal is used to connect to the positive output terminal of the external power supply, and the second input terminal is used to connect to the negative output terminal of the external power supply.

[0047] The differential rectifier circuit 20 includes a first differential input terminal and a second differential input terminal. The first differential input terminal is connected to the second input terminal of the voltage input terminal 10 , and the second differential input terminal is connected to the first input terminal of the voltage input terminal 10 .

[0048] In the present embodiment, the external power supply outputs alternating current, and thus the external power supply can be divided into a positive output terminal and a negative output terminal. The voltage input terminal 10 of the low leakage rectifier circuit in the present embodiment is correspondingly provided with two ports, namely, a first input terminal and a second input terminal. By dividing the voltage input terminal 10 into two input terminals, the voltage outputted by the external power supply, which can be divided into a positive output terminal and a negative output terminal, can be received; and the differential rectifier circuit 20 is also correspondingly provided with a first differential input terminal and a second differential input terminal, and the first differential input terminal and the second differential input terminal are correspondingly connected to the second input terminal and the first input terminal of the voltage input terminal 10, so that the differential rectifier circuit 20 can complete the differential rectification of the alternating current and output direct current to the electrical device. Figure 2 Vin+ is the first input terminal of the voltage input terminal 10 , and Vin− is the second input terminal of the voltage input terminal 10 .

[0049] Reference Figure 2 In one embodiment, the differential rectification circuit 20 includes a first NMOS transistor N1, a second NMOS transistor N2, a first PMOS transistor P1, and a second PMOS transistor P2. The gate of the first NMOS transistor N1 and the gate of the first PMOS transistor P1 are connected to the second differential input terminal. The source of the first NMOS transistor N1 and the source of the second NMOS transistor N2 are grounded. The drain of the first NMOS transistor N1 is connected to the source of the first PMOS transistor P1 and is connected to the first differential input terminal. The drain of the first PMOS transistor P1 and the drain of the second PMOS transistor P2 are the output terminal of the differential rectification circuit 20. The gate of the second NMOS transistor N2 and the gate of the second PMOS transistor P2 are connected to the first differential input terminal. The drain of the second NMOS transistor N2 is connected to the source of the second PMOS transistor P2 and is connected to the second differential input terminal.

[0050] In this embodiment, the differential rectifier circuit 20 composed of two NMOS transistors and two PMOS transistors can provide high gain while ensuring the symmetry and stability of the signal, wherein the NMOS transistor is turned on when the input signal is at a high level, and the PMOS transistor is turned on when the input signal is at a low level; thus, when the current signal is in the positive half cycle, the NMOS transistor is turned on, and when the current signal is in the negative half cycle, the PMOS transistor is turned on, thereby achieving rectification. By using a pair of complementary NMOS and PMOS transistors, the gain of the circuit can be increased while reducing distortion.

[0051] Reference Figure 2 In one embodiment, the leakage current suppression circuit 30 includes a third NMOS tube N3 and a fourth NMOS tube N4, the gate of the third NMOS tube N3 is connected to the first differential input terminal, the source of the third NMOS tube N3 and the source of the fourth NMOS tube N4 are connected to the voltage output terminal 40, the drain of the third NMOS tube N3 is connected to the drain of the first PMOS tube P1, the gate of the fourth NMOS tube N4 is connected to the second differential input terminal, and the drain of the fourth NMOS tube N4 is connected to the drain of the second PMOS tube P2.

[0052] In this embodiment, the leakage current suppression circuit 30 composed of the third NMOS tube N3 and the fourth NMOS tube N4, when the input voltage of the external power supply is less than the voltage of the voltage output terminal 40, because the gate of the third NMOS tube N3 is the input voltage of the external power supply, and the source voltage is the voltage of the voltage output terminal 40, the voltage difference VGS between the gate and the source of the third NMOS tube N3 is less than 0. At this time, the third NMOS tube N3 is turned off, and for the two NMOS tubes in the differential rectification circuit 20, the low input voltage will turn them off, which greatly suppresses the reverse leakage. In this way, the third NMOS tube N3 can turn off the forward conduction circuit in time to suppress the generation of reverse leakage. It is understandable that when the external power source adopts a friction nanogenerator, the human body is in a static state, and the input voltage is zero. At this time, there is a ground current from the voltage output terminal 40 to the ground. Since the two input voltages are 0V, the third NMOS tube N3 and the fourth NMOS tube N4 will be turned off, and the drain voltage of the third NMOS tube N3 and the fourth NMOS tube N4 is close to 0V, so that the gate-source voltage difference |VGS| between the first PMOS tube P1 and the second PMOS tube P2 is greater than the absolute value of the threshold voltage, thereby turning off the first PMOS tube P1 and the second PMOS tube P2. The first NMOS tube N1 and the second NMOS tube N2 are also turned off. In this way, the leakage current in the above two cases can be reduced.

[0053] Furthermore, the low leakage rectifier circuit in this embodiment can also reduce the conduction loss. When the input voltage of the first input terminal of the voltage input terminal 10 is a positive voltage and is greater than the voltage of the voltage output terminal 40, and the input voltage of the second input terminal of the voltage input terminal 10 is a negative voltage, a PMOS tube and an NMOS tube in the differential rectifier circuit 20 will be turned on, and the two transistors are in the linear region with a very small source-drain voltage drop VDS. For the first NMOS tube N1 and the second NMOS tube N2 connected in series, when the input voltage is greater than the output voltage and the voltage difference VGS between the gate and the source is greater than the threshold voltage, they are forward-conducted, similar to a traditional rectifier, and have a lower conduction impedance.

[0054] In order to better explain the technical concept of the present invention, Figures 1 to 5 The technical solution of the present invention is described as follows:

[0055] 1) For the reverse leakage current flowing from the output to the input when the low leakage rectifier circuit works normally, when the input voltage of the first input terminal of the voltage input terminal 10 is a positive voltage and is less than the voltage of the voltage output terminal 40, and the input voltage of the second input terminal of the voltage input terminal 10 is a negative voltage, the low input voltage will turn on the PMOS tube. Since the input voltage is less than the output voltage, there will be a reverse leakage current. At this time, the gate of the added third NMOS tube N3 is the input voltage of the external power supply, and the source voltage is the voltage of the voltage output terminal 40. Therefore, the voltage difference VGS between the gate and the source of the third NMOS tube N3 is less than 0. At this time, the third NMOS tube N3 is turned off, and for the two NMOS tubes in the differential rectifier circuit 20, the low input voltage will turn them off, greatly suppressing the reverse leakage. In this way, the third NMOS tube N3 can turn off the forward conduction circuit in time to suppress the generation of reverse leakage.

[0056] like Figure 3 As shown in the figure, when the input voltage is less than the output voltage, the differential rectifier has a large reverse leakage current, which will reduce the rectification efficiency and the output voltage. For the present invention, the added third NMOS tube N3 can turn off the forward conduction circuit in time to suppress the generation of reverse leakage. The extra conduction loss is much smaller than the reverse leakage loss, which increases the rectification efficiency. Figure 3 Vin+ represents the input voltage of the first input terminal of the voltage input terminal 10 , and Vin− represents the input voltage of the second input terminal of the voltage input terminal 10 .

[0057] 2) When the human body is in a static state and the input voltage is zero, the current to the ground from the output to the ground exists. Since the two input voltages are 0V, the third NMOS tube N3 and the fourth NMOS tube N4 will be turned off, and the drain voltage of the third NMOS tube N3 and the fourth NMOS tube N4 is close to 0V, so that the gate-source voltage difference |VGS| between the first PMOS tube P1 and the second PMOS tube P2 is greater than the absolute value of the threshold voltage, thereby turning off the first PMOS tube P1 and the second PMOS tube P2. The first NMOS tube N1 and the second NMOS tube N2 are also turned off. This greatly suppresses the leakage to the ground when the human body is static and zero input, and prolongs the energy storage time.

[0058] Figure 4 The following is a comparison curve of the low leakage rectifier circuit and other rectifier bridges. For the differential rectifier, when the output voltage is greater than 160mV, the ground leakage exceeds 3pA and continues to rise to nearly 30nA; while the ground leakage of the traditional rectifier is always around 100pA, and the low leakage output voltage range of the two is extremely small. However, the present invention and the dynamic suppression leakage full-bridge rectifier have a wide low ground leakage output voltage range of more than 3pA when the output voltage is 1.42V, that is, Figure 4 Wide ultra-low leakage range.

[0059] 3) The low leakage rectifier circuit can also reduce the conduction loss. When the input voltage of the first input terminal of the voltage input terminal 10 is a positive voltage and is greater than the voltage of the voltage output terminal 40, and the input voltage of the second input terminal of the voltage input terminal 10 is a negative voltage, a PMOS tube and an NMOS tube in the differential rectifier circuit 20 will be turned on, and the two transistors are in the linear region with a very small source-drain voltage drop VDS. For the first NMOS tube N1 and the second NMOS tube N2 connected in series, when the input voltage is greater than the output voltage and the voltage difference VGS between the gate and the source is greater than the threshold voltage, forward conduction occurs, which is similar to a traditional rectifier and has a lower conduction impedance.

[0060] Figure 5 The figure is a comparison curve of the conduction of the low leakage rectifier circuit and other rectifier bridges. The conduction impedance of the present invention is similar to that of the traditional rectifier during forward conduction. When the input-output voltage difference is greater than 420mV, the forward current is greater than 15nA, it has good conductivity, a wider conduction input voltage range, low forward conduction impedance, and when the output voltage is 1V, the conduction current is about 30pA; compared with the dynamic suppression leakage full-bridge rectifier, its forward current is greater than 15nA when the input-output voltage difference is greater than 620mV, and the conduction input voltage range is relatively narrow.

[0061] In summary, the low leakage rectifier circuit of the present invention has better reverse leakage and ground leakage suppression when the forward conduction impedance is low.

[0062] Further, in another embodiment, the leakage current suppression circuit 30 includes a third PMOS tube and a fourth PMOS tube (the third PMOS tube and the fourth PMOS tube are not shown in the figure), the gate of the third PMOS tube and the drain of the third PMOS tube are connected to the voltage output terminal 40, the source of the third PMOS tube is connected to the drain of the first PMOS tube P1, the gate of the fourth PMOS tube and the drain of the fourth PMOS tube are connected to the voltage output terminal 40, and the source of the fourth PMOS tube is connected to the drain of the second PMOS tube P2.

[0063] In this embodiment, the leakage current suppression circuit 30 can also be composed of a third PMOS tube and a fourth PMOS tube, and can also reduce the leakage current and reduce the conduction loss when the input voltage of the external power supply is less than the voltage of the voltage output terminal 40 and the input voltage is zero. The specific working principle can refer to the leakage current suppression circuit 30 composed of the third NMOS tube N3 and the fourth NMOS tube N4 in the above embodiment, and will not be repeated.

[0064] The invention also provides a rectifier.

[0065] In one embodiment, the rectifier includes the low leakage rectifier circuit as described above. It is understandable that, since the low leakage rectifier circuit is used in the rectifier of the present invention, the embodiments of the rectifier of the present invention include all technical solutions of all embodiments of the low leakage rectifier circuit, and the technical effects achieved are also exactly the same, which will not be repeated here.

[0066] In one embodiment, the rectifier further comprises:

[0067] A housing is formed with a housing cavity, and the low leakage rectifier circuit is accommodated in the housing.

[0068] In this embodiment, the low-leakage rectifier circuit can be arranged on the circuit board, and the shell can be used to fix the position relationship of the circuit board to ensure the safety and stability inside the accommodating cavity formed by the rectifier shell. When the low-leakage rectifier circuit is working, the position relationship of the circuit board will not change, and external gas or objects cannot fall on the circuit board to affect the operation of the low-leakage rectifier circuit on the circuit board; the shell also has a protective effect on the outside of the rectifier, and can better bear external forces to prevent the low-leakage rectifier circuit on the circuit board from being squeezed and damaged.

[0069] The present invention also provides a wearable implantable device.

[0070] In one embodiment, the wearable implantable device includes a power supply and the rectifier as described above, and the output end of the power supply is connected to the voltage input end 10 of the low leakage rectifier circuit in the rectifier. It can be understood that since the above rectifier is used in the wearable implantable device of the present invention, the embodiment of the wearable implantable device of the present invention includes all technical solutions of all embodiments of the above rectifier, and the technical effects achieved are also exactly the same, which will not be repeated here.

[0071] In one embodiment, the power source is a friction nanogenerator.

[0072] In this embodiment, a friction nanogenerator can be used as a power source. The friction nanogenerator is a device that converts kinetic energy into electrical energy by combining the friction electrification effect and electrostatic induction. In this way, the discrete energy generated by the environment and the human body can be effectively utilized to power the on-chip system of the wearable implantable device.

[0073] It should be understood that the application of the present invention is not limited to the above examples. For ordinary technicians in this field, improvements or changes can be made based on the above description. All these improvements and changes should fall within the scope of protection of the claims attached to the present invention.

Claims

1. A low leakage rectifier circuit, characterized in that: include: Voltage input terminal, used to connect to the output terminal of an external power supply; A differential rectifier circuit, the input end of the differential rectifier circuit is connected to the voltage input end, and the differential rectifier circuit is used to perform differential rectification on the AC current output by the external power supply and then output DC power; a leakage current suppression circuit, wherein an input end of the leakage current suppression circuit is connected to an output end of the differential rectification circuit; A voltage output terminal connected to the output terminal of the leakage current suppression circuit, the voltage output terminal is used to connect an electrical device, and the leakage current suppression circuit is used to output the direct current output by the differential rectification circuit to the electrical device through the voltage output terminal; The leakage current suppression circuit is also used to suppress the leakage current between the voltage output terminal and the differential rectification circuit.

2. The low leakage rectifier circuit according to claim 1, characterized in that: The external power supply has a positive output terminal and a negative output terminal, and the voltage input terminal includes a first input terminal and a second input terminal, wherein the first input terminal is used to connect to the positive output terminal of the external power supply, and the second input terminal is used to connect to the negative output terminal of the external power supply.

3. The low leakage rectifier circuit according to claim 2, characterized in that: The differential rectification circuit includes a first differential input terminal and a second differential input terminal, the first differential input terminal is connected to the second input terminal of the voltage input terminal, and the second differential input terminal is connected to the first input terminal of the voltage input terminal.

4. The low leakage rectifier circuit according to claim 3, characterized in that: The differential rectification circuit includes a first NMOS tube, a second NMOS tube, a first PMOS tube and a second PMOS tube, the gate of the first NMOS tube and the gate of the first PMOS tube are connected to the second differential input terminal, the source of the first NMOS tube and the source of the second NMOS tube are grounded, the drain of the first NMOS tube is connected to the source of the first PMOS tube and to the first differential input terminal, the drain of the first PMOS tube and the drain of the second PMOS tube are the output terminal of the differential rectification circuit, the gate of the second NMOS tube and the gate of the second PMOS tube are connected to the first differential input terminal, and the drain of the second NMOS tube is connected to the source of the second PMOS tube and to the second differential input terminal.

5. The low leakage rectifier circuit according to claim 4, characterized in that: The leakage current suppression circuit includes a third NMOS tube and a fourth NMOS tube, the gate of the third NMOS tube is connected to the first differential input end, the source of the third NMOS tube and the source of the fourth NMOS tube are connected to the voltage output end, the drain of the third NMOS tube is connected to the drain of the first PMOS tube, the gate of the fourth NMOS tube is connected to the second differential input end, and the drain of the fourth NMOS tube is connected to the drain of the second PMOS tube.

6. The low leakage rectifier circuit according to claim 4, characterized in that: The leakage current suppression circuit includes a third PMOS tube and a fourth PMOS tube, the gate of the third PMOS tube and the drain of the third PMOS tube are connected to the voltage output end, the source of the third PMOS tube is connected to the drain of the first PMOS tube, the gate of the fourth PMOS tube and the drain of the fourth PMOS tube are connected to the voltage output end, and the source of the fourth PMOS tube is connected to the drain of the second PMOS tube.

7. A rectifier, characterized in that: It comprises the low leakage rectifier circuit as described in any one of claims 1 to 6.

8. The rectifier according to claim 7, characterized in that The rectifier also includes: A housing is formed with a housing cavity, and the low leakage rectifier circuit is accommodated in the housing.

9. A wearable implantable device, characterized in that: It comprises a power supply and a rectifier as claimed in any one of claims 7 to 8, wherein the output end of the power supply is connected to the voltage input end of a low leakage rectification circuit in the rectifier.

10. The wearable implantable device according to claim 9, characterized in that: The power source is a friction nanogenerator.

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