Multi-frequency quartz wafer fabrication control method, apparatus, equipment and storage medium

Abstract

This invention relates to the field of quartz wafer fabrication technology, and discloses a method, apparatus, equipment, and storage medium for controlling the fabrication of multi-frequency quartz wafers. By extracting the multi-frequency quartz wafer fabrication sub-tasks requiring different frequency sub-wafer combinations from the overall fabrication task, measuring the thickness of the regions corresponding to the formation of several sub-wafers from each wafer in the original wafer batch, considering the wafer etching sequence and the optimal etching speed of the etching equipment, and with the fabrication period as a constraint and etching time as the objective, the allocation strategy between each wafer and the multi-frequency quartz wafer fabrication sub-task is optimized. Finally, the etching equipment is driven to execute the etching action corresponding to each wafer according to the allocation strategy. Therefore, this invention, through the rational execution of wafer allocation and thickness monitoring during the original wafer and wafer fabrication process, reduces the fabrication difficulty brought about by the combination of numerous factors in formulating the fabrication strategy, and improves the fabrication efficiency and yield of multi-frequency quartz wafers.

Description

Technical Field

[0001] This invention relates to the field of quartz wafer fabrication technology, and in particular to a method, apparatus, equipment, and storage medium for controlling the fabrication of multi-frequency quartz wafers. Background Technology

[0002] Generally speaking, the thickness of a wafer is closely related to its frequency. The thinner the wafer, the higher its oscillation frequency. This is because the thickness of the wafer determines the characteristics of its vibration mode. Under the same excitation conditions, a thinner wafer is more likely to generate high-frequency vibrations. Currently, in related fields, by controlling parameters such as etching time, temperature, gas flow rate, and power during the etching process, the etching rate and etching amount of the wafer can be precisely controlled, thereby obtaining wafers of different thicknesses to meet the requirements of different chip frequencies.

[0003] However, in some scenarios (such as multi-frequency wafer fabrication, multi-frequency chip manufacturing, etc.), the existing fabrication process of using quartz wafers to fabricate chips of corresponding frequencies has the following limitations: (1) Fabricating wafers of different frequencies on the same wafer requires not only monitoring the thickness of different regions during wafer fabrication, but also considering the wafer material error, that is, the initial thickness of each original wafer in the same batch of original wafers is different in different regions, which makes the fabrication of wafers of different frequencies on the same wafer difficult, with low fabrication efficiency and low yield. (2) During the period of large-volume wafer fabrication order demand, since different wafer fabrication orders have different frequency sub-wafer combination requirements, different quartz wafer requirements and fabrication deadlines, the fabrication deadline of each wafer order and the maximization of wafer material utilization need to be considered when performing wafer etching to determine the order of wafer fabrication and the wafer fabrication orders allocated. The influence of the above-mentioned factors makes the control of multi-frequency quartz wafer fabrication more difficult, and there is no good solution in the existing technology.

[0004] Therefore, how to improve the fabrication efficiency of multi-frequency quartz wafers, reduce the fabrication difficulty brought about by the combination of many factors in the formulation of fabrication strategies, and improve the yield of finished products fabricated on the same wafer with different frequencies is a technical problem that urgently needs to be solved. Summary of the Invention

[0005] This invention provides a method, apparatus, device, and storage medium for the preparation and control of multi-frequency quartz wafers, aiming to solve at least one of the above-mentioned technical problems.

[0006] To achieve the above objectives, the present invention provides a method for controlling the fabrication of multi-frequency quartz wafers, comprising the following steps:

[0007] Obtain quartz wafer frequency requirement information uploaded by several users, and generate a multi-frequency quartz wafer fabrication task based on the quartz wafer frequency requirement information;

[0008] Extract several multi-frequency quartz wafer fabrication sub-tasks from the multi-frequency quartz wafer fabrication task that have different frequency sub-wafer combination requirements; wherein, each multi-frequency quartz wafer fabrication sub-task includes the required number of quartz wafers for the corresponding frequency sub-wafer combination and the fabrication time limit;

[0009] The wafer region thickness information of each wafer in the original wafer batch corresponding to the multi-frequency quartz wafer preparation task is measured. Based on the wafer region thickness information of each wafer, the thickness values ​​of the corresponding positions of several sub-wafers are formed and the wafer etching processing sequence is determined. Considering the optimal etching speed of the etching equipment, and in order to meet the requirements of the number of quartz wafers required for each frequency sub-wafer combination and the preparation time, an allocation strategy for each wafer in the original wafer batch and the multi-frequency quartz wafer preparation sub-task is generated.

[0010] The allocation strategy for each wafer is sent to the etching equipment, so that when the etching equipment detects each wafer, it repeatedly performs etching operations several times according to the frequency sub-wafer combination requirements of the multi-frequency quartz wafer preparation sub-task corresponding to the wafer, until the thickness values ​​of the corresponding position regions of the wafer to form several sub-wafers meet the frequency sub-wafer combination requirements.

[0011] Optionally, obtain frequency requirement information for quartz wafers uploaded by several users, and generate multi-frequency quartz wafer fabrication task steps based on the frequency requirement information, specifically including:

[0012] Obtain quartz wafer frequency requirement information uploaded by several users, and store the quartz wafer frequency requirement information sequentially in the constructed order database according to the upload time of each quartz wafer frequency requirement information to generate a quartz wafer manufacturing order database.

[0013] The quartz wafer manufacturing order database is invoked to extract the required quantity and manufacturing period of quartz wafers corresponding to different frequency sub-wafer combinations for each quartz wafer frequency requirement within the target time period, thereby generating a multi-frequency quartz wafer manufacturing task.

[0014] Optionally, several multi-frequency quartz wafer fabrication sub-task steps with different frequency sub-wafer combination requirements are extracted from the multi-frequency quartz wafer fabrication task, specifically including:

[0015] Extract the required quantity and preparation time of quartz wafers corresponding to different frequency sub-wafer combinations for each quartz wafer frequency requirement information in the multi-frequency quartz wafer fabrication task;

[0016] The required number of quartz wafers with the same frequency sub-wafer combination and the same preparation period is accumulated and calculated. Based on the accumulated calculation results, several multi-frequency quartz wafer preparation sub-tasks with different frequency sub-wafer combination requirements are generated.

[0017] Optionally, the step of measuring the wafer region thickness information of each wafer in the original wafer batch corresponding to the multi-frequency quartz wafer fabrication task specifically includes:

[0018] The thickness of each wafer at each position in the original wafer batch corresponding to the multi-frequency quartz wafer preparation task is measured using a wafer thickness measurement device to obtain the thickness value of each wafer at each position.

[0019] Based on the pre-determined correspondence between the regions corresponding to the formation of several sub-wafers in each wafer and each wafer at each position, the thickness value of the regions corresponding to the formation of several sub-wafers in each wafer is determined, and wafer region thickness information of each wafer is generated.

[0020] Optionally, based on the thickness values ​​of the corresponding regions of several sub-wafers formed from the wafer region thickness information of each wafer and the wafer etching processing sequence, and considering the optimal etching speed of the etching equipment, to meet the requirements of the number of quartz wafers needed for each frequency sub-wafer combination and the preparation time, an allocation strategy step for the preparation sub-tasks of each wafer and multi-frequency quartz wafers in the original wafer batch is generated, specifically including:

[0021] Based on the table showing the relationship between wafer thickness and wafer frequency for each sub-wafer, the frequency sub-wafer combination for each multi-frequency quartz wafer fabrication sub-task is converted into a wafer thickness requirement combination.

[0022] Based on the wafer thickness requirements of each multi-frequency quartz wafer fabrication sub-task and the optimal etching speed of the etching equipment, with the fabrication deadline as a constraint and the etching time as the objective, the allocation strategy of each wafer and the multi-frequency quartz wafer fabrication sub-task in the original wafer batch is optimized.

[0023] Optionally, based on the wafer thickness requirement combination and the optimal etching speed of the etching equipment for each multi-frequency quartz wafer fabrication sub-task, and with the fabrication deadline as a constraint and etching time as the objective, the optimization steps for solving the allocation strategy between each wafer and the multi-frequency quartz wafer fabrication sub-task in the original wafer batch are as follows:

[0024] Based on the optimal etching speed of the etching equipment, the etching time is calculated when each wafer is assigned to different multi-frequency quartz wafer fabrication sub-tasks to perform the etching of the thickness values ​​of several sub-wafer corresponding regions in the wafer to the wafer thickness requirement combination corresponding to the multi-frequency quartz wafer fabrication sub-tasks.

[0025] Based on the etching time, and with the constraint that the last quartz wafer of the frequency sub-wafer combination corresponding to each multi-frequency quartz wafer preparation sub-task is prepared no later than the preparation deadline after each wafer is assigned to the corresponding multi-frequency quartz wafer preparation sub-task, and with the objective of minimizing the total etching time when the required number of quartz wafers of the frequency sub-wafer combination corresponding to each multi-frequency quartz wafer preparation sub-task is prepared after each wafer is assigned to the corresponding multi-frequency quartz wafer preparation sub-task, the allocation strategy of each wafer and the multi-frequency quartz wafer preparation sub-task in the original wafer batch is optimized.

[0026] Optionally, the allocation strategy for each wafer is sent to the etching equipment, so that when the etching equipment detects each wafer, it repeatedly performs several etching operations according to the frequency sub-wafer combination requirements of the multi-frequency quartz wafer fabrication sub-task corresponding to the wafer, until the thickness values ​​of the corresponding position regions of the wafer forming several sub-wafers meet the frequency sub-wafer combination requirements. Specifically, this includes:

[0027] The allocation strategy for each wafer is sent to the etching equipment so that when the etching equipment detects each wafer, it repeatedly performs an etching operation of unit etching thickness several times according to the frequency sub-wafer combination requirements of the multi-frequency quartz wafer preparation sub-task corresponding to the wafer.

[0028] Before each wafer performs an etching operation with a unit etching thickness, it is determined whether the thickness value of the corresponding position area of ​​each sub-wafer meets the wafer thickness requirement of the corresponding position area in the frequency sub-wafer combination requirement. If yes, the etching operation with a unit etching thickness of the subsequent sub-wafer is stopped. If no, the etching operation with a unit etching thickness of the subsequent sub-wafer is continued until the wafer forms a number of sub-wafers whose corresponding position area thickness values ​​meet the frequency sub-wafer combination requirement.

[0029] Furthermore, to achieve the above objectives, the present invention also provides a multi-frequency quartz wafer fabrication control device, comprising:

[0030] The acquisition module is used to acquire quartz wafer frequency requirement information uploaded by several users, and generate a multi-frequency quartz wafer preparation task based on the quartz wafer frequency requirement information.

[0031] The extraction module is used to extract several multi-frequency quartz wafer preparation sub-tasks with different frequency sub-wafer combination requirements from the multi-frequency quartz wafer preparation task; wherein, each multi-frequency quartz wafer preparation sub-task includes the required number of quartz wafers for the corresponding frequency sub-wafer combination and the preparation time limit;

[0032] The generation module is used to measure the wafer region thickness information of each wafer in the original wafer batch corresponding to the multi-frequency quartz wafer preparation task, and based on the wafer region thickness information of each wafer, form the thickness values ​​of the corresponding positions of several sub-wafers and the wafer etching processing sequence, taking into account the optimal etching speed of the etching equipment, and in order to meet the requirements of the number of quartz wafers required for each frequency sub-wafer combination and the preparation time limit, generate an allocation strategy for each wafer in the original wafer batch and the multi-frequency quartz wafer preparation sub-task.

[0033] An execution module is used to send the allocation strategy of each wafer to the etching equipment, so that when the etching equipment detects each wafer, it repeatedly performs etching operations several times according to the frequency sub-wafer combination requirements of the multi-frequency quartz wafer preparation sub-task corresponding to the wafer, until the thickness value of the corresponding position area of ​​the wafer forms several sub-wafers meets the frequency sub-wafer combination requirements.

[0034] In addition, to achieve the above objectives, the present invention also provides a multi-frequency quartz wafer fabrication control device, the multi-frequency quartz wafer fabrication control device comprising: a memory, a processor, and a multi-frequency quartz wafer fabrication control program stored in the memory and executable on the processor, wherein when the multi-frequency quartz wafer fabrication control program is executed by the processor, it implements the steps of the multi-frequency quartz wafer fabrication control method as described above.

[0035] In addition, to achieve the above objectives, the present invention also provides a storage medium storing a multi-frequency quartz wafer fabrication control program, which, when executed by a processor, implements the steps of the multi-frequency quartz wafer fabrication control method described above.

[0036] The beneficial effects of this invention are as follows: It proposes a multi-frequency quartz wafer fabrication control method, apparatus, device, and storage medium. By extracting several multi-frequency quartz wafer fabrication sub-tasks that require different frequency sub-wafer combinations in the multi-frequency quartz wafer fabrication task, measuring the thickness value of the corresponding position area of ​​each wafer forming several sub-wafers in the original wafer batch, and considering the number of quartz wafers required and the fabrication deadline of each multi-frequency quartz wafer fabrication sub-task, the wafer etching processing sequence and the optimal etching speed of the etching equipment are taken into account. With the fabrication deadline as a constraint and the etching time as the objective, the allocation strategy of each wafer and the multi-frequency quartz wafer fabrication sub-task in the original wafer batch is optimized. This ensures that after each wafer is allocated to the multi-frequency quartz wafer fabrication sub-task, the fabrication deadline of each wafer order and the goal of maximizing the utilization of the wafer material are met. Finally, the allocation strategy is sent to the etching equipment to drive the etching equipment to execute the etching action corresponding to each wafer. Therefore, by rationally allocating the wafer to each multi-frequency quartz wafer fabrication task and monitoring the thickness of the original wafer and the wafer fabrication process, the fabrication efficiency of multi-frequency quartz wafers can be improved, the fabrication difficulty brought about by the combination of many factors in the formulation of the fabrication strategy can be reduced, and the yield of finished products fabricating wafers of different frequencies on the same wafer can be improved. Attached Figure Description

[0037] Figure 1 This is a schematic diagram of the device structure of the hardware operating environment involved in the embodiments of the present invention;

[0038] Figure 2 This is a schematic flowchart of an embodiment of the multi-frequency quartz wafer fabrication and control method of the present invention;

[0039] Figure 3 This is a structural block diagram of a multi-frequency quartz wafer fabrication control device according to an embodiment of the present invention.

[0040] The realization of the objective, functional features and advantages of the present invention will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0041] It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

[0042] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention.

[0043] like Figure 1 As shown, Figure 1 This is a schematic diagram of the device structure of the hardware operating environment involved in the embodiments of the present invention.

[0044] like Figure 1 As shown, the device may include: a processor 1001, such as a CPU; a communication bus 1002; a user interface 1003; a network interface 1004; and a memory 1005. The communication bus 1002 is used to enable communication between these components. The user interface 1003 may include a display screen or an input unit such as a keyboard; optionally, the user interface 1003 may also include a standard wired interface or a wireless interface. The network interface 1004 may optionally include a standard wired interface or a wireless interface (such as a Wi-Fi interface). The memory 1005 may be high-speed RAM or non-volatile memory, such as a disk drive. Optionally, the memory 1005 may also be a storage device independent of the aforementioned processor 1001.

[0045] Those skilled in the art will understand that Figure 1 The structure of the device shown does not constitute a limitation on the device and may include more or fewer components than shown, or combine certain components, or have different component arrangements.

[0046] like Figure 1 As shown, the memory 1005, which serves as a computer storage medium, may include an operating system, a network communication module, a user interface module, and a multi-frequency quartz wafer fabrication control program.

[0047] exist Figure 1 In the terminal shown, network interface 1004 is mainly used to connect to the backend server and communicate with it; user interface 1003 is mainly used to connect to the client (user terminal) and communicate with it; while processor 1001 can be used to call the multi-frequency quartz wafer fabrication control program stored in memory 1005 and perform the following operations:

[0048] Obtain quartz wafer frequency requirement information uploaded by several users, and generate a multi-frequency quartz wafer fabrication task based on the quartz wafer frequency requirement information;

[0049] Extract several multi-frequency quartz wafer fabrication sub-tasks from the multi-frequency quartz wafer fabrication task that have different frequency sub-wafer combination requirements; wherein, each multi-frequency quartz wafer fabrication sub-task includes the required number of quartz wafers for the corresponding frequency sub-wafer combination and the fabrication time limit;

[0050] The wafer region thickness information of each wafer in the original wafer batch corresponding to the multi-frequency quartz wafer preparation task is measured. Based on the wafer region thickness information of each wafer, the thickness values ​​of the corresponding positions of several sub-wafers are formed and the wafer etching processing sequence is determined. Considering the optimal etching speed of the etching equipment, and in order to meet the requirements of the number of quartz wafers required for each frequency sub-wafer combination and the preparation time, an allocation strategy for each wafer in the original wafer batch and the multi-frequency quartz wafer preparation sub-task is generated.

[0051] The allocation strategy for each wafer is sent to the etching equipment, so that when the etching equipment detects each wafer, it repeatedly performs etching operations several times according to the frequency sub-wafer combination requirements of the multi-frequency quartz wafer preparation sub-task corresponding to the wafer, until the thickness values ​​of the corresponding position regions of the wafer to form several sub-wafers meet the frequency sub-wafer combination requirements.

[0052] The specific embodiments of the present invention applied to the device are basically the same as the embodiments of the multi-frequency quartz wafer fabrication and control method described below, and will not be repeated here.

[0053] This invention provides a method for controlling the fabrication of multi-frequency quartz wafers, referring to... Figure 2 , Figure 2 This is a schematic flowchart of an embodiment of the multi-frequency quartz wafer fabrication and control method of the present invention.

[0054] In this embodiment, the multi-frequency quartz wafer fabrication control method includes the following steps:

[0055] S100: Obtain quartz wafer frequency requirement information uploaded by several users, and generate a multi-frequency quartz wafer preparation task based on the quartz wafer frequency requirement information;

[0056] S200: Extract several multi-frequency quartz wafer preparation sub-tasks from the multi-frequency quartz wafer preparation task that have different frequency sub-wafer combination requirements; wherein, each multi-frequency quartz wafer preparation sub-task includes the required number of quartz wafers for the corresponding frequency sub-wafer combination and the preparation time.

[0057] S300: Measure the wafer region thickness information of each wafer in the original wafer batch corresponding to the multi-frequency quartz wafer preparation task, and based on the thickness value of the corresponding position area of ​​several sub-wafers formed from the wafer region thickness information of each wafer and the wafer etching processing sequence, consider the optimal etching speed of the etching equipment, and generate an allocation strategy for each wafer in the original wafer batch and the multi-frequency quartz wafer preparation sub-task to meet the requirements of the number of quartz wafers required for each frequency sub-wafer combination and the preparation time limit.

[0058] S400: The allocation strategy for each wafer is sent to the etching equipment so that when the etching equipment detects each wafer, it repeatedly performs several etching operations according to the frequency sub-wafer combination requirements of the multi-frequency quartz wafer preparation sub-task corresponding to the wafer, until the thickness values ​​of the corresponding position regions of the wafer to form several sub-wafers meet the frequency sub-wafer combination requirements.

[0059] It should be noted that in some scenarios (such as multi-frequency wafer fabrication, multi-frequency chip manufacturing, etc.), the existing fabrication process of using quartz wafers to fabricate chips of corresponding frequencies has the following limitations: (1) Fabricating wafers of different frequencies on the same wafer not only requires monitoring the thickness of different regions during wafer fabrication, but also requires considering the wafer material error, that is, the initial thickness of each original wafer in the same batch of original wafers is different in different regions, which makes it difficult to fabricate wafers of different frequencies on the same wafer, resulting in low fabrication efficiency and low yield. (2) During the period of large-volume wafer fabrication order demand, since different wafer fabrication orders have different frequency sub-wafer combination requirements, different quartz wafer requirements and fabrication deadlines, when performing wafer etching processing, it is also necessary to consider the fabrication deadline of each wafer order and the maximization of wafer material utilization to determine the order of wafer fabrication and the wafer fabrication orders allocated. The influence of the above-mentioned factors makes the control of multi-frequency quartz wafer fabrication more difficult, and there is no good solution in the existing technology.

[0060] To address the aforementioned issues, this embodiment extracts several multi-frequency quartz wafer fabrication sub-tasks that require different frequency sub-wafer combinations within the multi-frequency quartz wafer fabrication task. It measures the thickness of the regions corresponding to the formation of several sub-wafers from each wafer in the original wafer batch. Based on the required number of quartz wafers and the fabrication deadline for each multi-frequency quartz wafer fabrication sub-task, considering the wafer etching sequence and the optimal etching speed of the etching equipment, and with the fabrication deadline as a constraint and etching time as the objective, it optimizes the allocation strategy between each wafer in the original wafer batch and the multi-frequency quartz wafer fabrication sub-task. This ensures that each wafer, after being allocated to a multi-frequency quartz wafer fabrication sub-task, meets the fabrication deadline for each wafer order and maximizes the utilization of incoming wafer materials. Finally, the allocation strategy is sent to the etching equipment, driving it to execute the etching action corresponding to each wafer. Therefore, by rationally allocating wafers to each multi-frequency quartz wafer fabrication task and monitoring the thickness of the original wafer and the wafer fabrication process, the fabrication efficiency of multi-frequency quartz wafers is improved, the fabrication difficulty brought about by the combination of numerous factors in the fabrication strategy formulation is reduced, and the yield of finished products fabricating wafers of different frequencies on the same wafer is increased.

[0061] In a preferred embodiment, several user-uploaded quartz wafer frequency requirement information are obtained, and based on the quartz wafer frequency requirement information, a multi-frequency quartz wafer fabrication task step is generated, specifically including:

[0062] S110: Obtain quartz wafer frequency requirement information uploaded by several users, and store the quartz wafer frequency requirement information sequentially in the constructed order database according to the upload time of each quartz wafer frequency requirement information to generate a quartz wafer manufacturing order database.

[0063] S120: Call the quartz wafer manufacturing order database, extract the required quantity and manufacturing period of quartz wafers corresponding to different frequency sub-wafer combinations for each quartz wafer frequency requirement information within the target time period in the quartz wafer manufacturing order database, and generate a multi-frequency quartz wafer manufacturing task.

[0064] In this embodiment, by acquiring the quartz wafer frequency demand information uploaded by users, storing it in the quartz wafer manufacturing order database according to the upload time, and extracting the quantity of quartz wafers required and the manufacturing deadline corresponding to different frequency sub-wafer combinations for each quartz wafer frequency demand information within the target time period, a multi-frequency quartz wafer manufacturing task is generated. Thus, by statistically summarizing and comprehensively considering the quartz wafer frequency demand information of several users within the target time period, the overall quartz wafer frequency demand processing efficiency can be improved compared to the task allocation of a single quartz wafer frequency demand information.

[0065] In a preferred embodiment, several multi-frequency quartz wafer fabrication sub-task steps with different frequency sub-wafer combination requirements are extracted from the multi-frequency quartz wafer fabrication task, specifically including:

[0066] S210: Extract the required quantity and preparation time of quartz wafers corresponding to different frequency sub-wafer combinations for each quartz wafer frequency requirement information in the multi-frequency quartz wafer preparation task;

[0067] S220: Accumulate the required number of quartz wafers with the same frequency sub-wafer combination and the same preparation period, and generate several multi-frequency quartz wafer preparation sub-tasks with different frequency sub-wafer combination requirements based on the accumulation calculation results.

[0068] In this embodiment, after obtaining a multi-frequency quartz wafer fabrication task containing frequency requirement information for several quartz wafers, the required quantity of quartz wafers and the preparation period corresponding to different frequency sub-wafer combinations for each quartz wafer frequency requirement information are extracted. The required quantity of quartz wafers with the same frequency sub-wafer combination and the same preparation period is accumulated to generate several multi-frequency quartz wafer fabrication sub-tasks with different frequency sub-wafer combination requirements. Thus, by decomposing and combining the specific requirements in the frequency requirement information of each quartz wafer in the multi-frequency quartz wafer fabrication task, multi-frequency quartz wafer fabrication sub-tasks with different frequency sub-wafer combination requirements are generated. Subsequently, when executing multi-frequency quartz wafer fabrication control, wafer allocation and fabrication strategy generation can be performed at the sub-task as the smallest unit, thereby improving the fabrication efficiency of multi-frequency quartz wafers.

[0069] In a preferred embodiment, the step of measuring the wafer region thickness information of each wafer in the original wafer batch corresponding to the multi-frequency quartz wafer fabrication task specifically includes:

[0070] S310: Use a wafer thickness measuring device to measure the thickness of each wafer at each position in the original wafer batch corresponding to the multi-frequency quartz wafer preparation task, and obtain the thickness value of each wafer at each position;

[0071] S320: Based on the pre-determined correspondence between the regions corresponding to the formation of several sub-wafers in each wafer and each wafer at each position, determine the thickness value of the regions corresponding to the formation of several sub-wafers in each wafer, and generate wafer region thickness information for each wafer.

[0072] Based on this, according to the thickness values ​​of the corresponding regions of several sub-wafers formed from the wafer region thickness information of each wafer and the wafer etching processing sequence, considering the optimal etching speed of the etching equipment, and taking into account the requirements of the number of quartz wafers needed for each frequency sub-wafer combination and the preparation time limit, the allocation strategy steps for the preparation sub-tasks of each wafer and multi-frequency quartz wafers in the original wafer batch are generated, specifically including:

[0073] S330: Based on the relationship table between wafer thickness and wafer frequency for each sub-wafer, convert the frequency sub-wafer combination of each multi-frequency quartz wafer fabrication sub-task into a wafer thickness requirement combination;

[0074] S340: Based on the wafer thickness requirement combination and the optimal etching speed of the etching equipment for each multi-frequency quartz wafer fabrication sub-task, with the fabrication deadline as the constraint and the etching time as the objective, optimize the allocation strategy of each wafer and multi-frequency quartz wafer fabrication sub-task in the original wafer batch.

[0075] Furthermore, based on the wafer thickness requirement combination and the optimal etching speed of the etching equipment for each multi-frequency quartz wafer fabrication sub-task, and with the fabrication deadline as a constraint and etching time as the objective, the optimization steps for solving the allocation strategy between each wafer and the multi-frequency quartz wafer fabrication sub-task in the original wafer batch are as follows:

[0076] S341: Based on the optimal etching speed of the etching equipment, calculate the etching time when each wafer is assigned to different multi-frequency quartz wafer fabrication subtasks to execute the thickness values ​​of several sub-wafer corresponding position regions in the wafer to the wafer thickness requirement combination corresponding to the multi-frequency quartz wafer fabrication subtasks.

[0077] S342: Based on the etching time, with the constraint that the last quartz wafer of the frequency sub-wafer combination corresponding to each multi-frequency quartz wafer preparation sub-task is prepared no later than the preparation deadline after each wafer is assigned to the corresponding multi-frequency quartz wafer preparation sub-task, and with the objective of minimizing the total etching time when the required number of quartz wafers of the frequency sub-wafer combination corresponding to each multi-frequency quartz wafer preparation sub-task is prepared after each wafer is assigned to the corresponding multi-frequency quartz wafer preparation sub-task, optimize the allocation strategy of each wafer and the multi-frequency quartz wafer preparation sub-task in the original wafer batch.

[0078] In this embodiment, firstly, a wafer thickness measurement device is used to measure the thickness at each position of each wafer in the original wafer batch corresponding to the multi-frequency quartz wafer fabrication task, obtaining the thickness value of each wafer at each position. By determining the thickness values ​​of the corresponding position regions forming several sub-wafers in each wafer, wafer region thickness information for each wafer is generated. Then, according to the relationship table between the wafer thickness and wafer frequency of each sub-wafer, the frequency sub-wafer combination of each multi-frequency quartz wafer fabrication sub-task is converted into a wafer thickness requirement combination. Considering the optimal etching speed of the etching equipment (a slow etching speed leads to low fabrication efficiency, while a fast etching speed affects etching quality; the optimal etching speed can be determined based on the historical etching process of the etching equipment). The process involves several steps. First, the etching time is calculated based on the thickness of the corresponding regions of several sub-wafers within the wafer, combined with the wafer thickness requirements of the multi-frequency quartz wafer fabrication sub-task. Second, considering the wafer etching sequence and the optimal etching speed of the etching equipment, and with the fabrication deadline as a constraint and etching time as the objective, the allocation strategy between each wafer and the multi-frequency quartz wafer fabrication sub-task in the original wafer batch is optimized. This ensures that each wafer, after being assigned to a multi-frequency quartz wafer fabrication sub-task, meets the fabrication deadline of each wafer order and maximizes the utilization of incoming wafer materials. Finally, the allocation strategy is sent to the etching equipment, driving it to perform the etching action corresponding to each wafer. Therefore, by rationally allocating wafers to each multi-frequency quartz wafer fabrication task and monitoring the thickness of the original wafer and the wafer fabrication process, the fabrication efficiency of multi-frequency quartz wafers is improved, the fabrication difficulty brought about by the combination of numerous factors in the fabrication strategy formulation is reduced, and the yield of finished products fabricating wafers of different frequencies on the same wafer is increased.

[0079] In a preferred embodiment, the allocation strategy for each wafer is sent to the etching equipment, so that when the etching equipment detects each wafer, it repeatedly performs etching operations several times according to the frequency sub-wafer combination requirements of the multi-frequency quartz wafer fabrication sub-task corresponding to the wafer, until the thickness values ​​of the corresponding position regions of the wafer forming several sub-wafers meet the frequency sub-wafer combination requirements. Specifically, this includes:

[0080] S410: Send the allocation strategy for each wafer to the etching equipment so that when the etching equipment detects each wafer, it repeatedly performs an etching action of unit etching thickness several times according to the frequency sub-wafer combination requirements of the multi-frequency quartz wafer preparation sub-task corresponding to the wafer.

[0081] S420: Before each wafer performs an etching operation with a unit etching thickness, determine whether the thickness value of the corresponding position area of ​​each sub-wafer meets the wafer thickness requirement of the corresponding position area in the frequency sub-wafer combination requirement. If yes, stop the subsequent etching operation with a unit etching thickness of the sub-wafer. If no, continue to perform the subsequent etching operation with a unit etching thickness of the sub-wafer until the wafer forms a number of sub-wafers whose corresponding position area thickness values ​​meet the frequency sub-wafer combination requirement.

[0082] In this embodiment, by decomposing the etching action for each sub-wafer location into several etching actions of unit etching thickness at the optimal etching speed, when executing the etching action for each wafer, the etching action for each sub-wafer location is controlled by monitoring the thickness value of the region corresponding to each sub-wafer location before each unit etching thickness etching action, thereby improving the etching accuracy for each sub-wafer in each wafer.

[0083] Reference Figure 3 , Figure 3 This is a structural block diagram of an embodiment of the multi-frequency quartz wafer fabrication control device of the present invention.

[0084] like Figure 3 As shown, the multi-frequency quartz wafer fabrication control device proposed in this embodiment of the invention includes:

[0085] The acquisition module 10 is used to acquire quartz wafer frequency requirement information uploaded by several users, and generate a multi-frequency quartz wafer preparation task based on the quartz wafer frequency requirement information.

[0086] Extraction module 20 is used to extract several multi-frequency quartz wafer preparation sub-tasks with different frequency sub-wafer combination requirements from the multi-frequency quartz wafer preparation task; wherein, each multi-frequency quartz wafer preparation sub-task includes the required number of quartz wafers for the corresponding frequency sub-wafer combination and the preparation time limit;

[0087] The generation module 30 is used to measure the wafer region thickness information of each wafer in the original wafer batch corresponding to the multi-frequency quartz wafer preparation task, and generate an allocation strategy between each wafer in the original wafer batch and the multi-frequency quartz wafer preparation sub-task based on the thickness value of the corresponding position area of ​​several sub-wafers formed from the wafer region thickness information of each wafer and the wafer etching processing sequence, taking into account the optimal etching speed of the etching equipment, and in order to meet the requirements of the number of quartz wafers required for each frequency sub-wafer combination and the preparation time.

[0088] The execution module 40 is used to send the allocation strategy of each wafer to the etching equipment, so that when the etching equipment detects each wafer, it repeatedly performs the etching action several times according to the frequency sub-wafer combination requirements of the multi-frequency quartz wafer preparation sub-task corresponding to the wafer, until the thickness value of the corresponding position area of ​​the wafer forms several sub-wafers meets the frequency sub-wafer combination requirements.

[0089] Other embodiments or specific implementations of the multi-frequency quartz wafer fabrication control device of the present invention can be referred to the above-described method embodiments, and will not be repeated here.

[0090] Furthermore, the present invention also proposes a multi-frequency quartz wafer fabrication control device, which includes: a memory, a processor, and a multi-frequency quartz wafer fabrication control program stored in the memory and executable on the processor. When the multi-frequency quartz wafer fabrication control program is executed by the processor, it implements the steps of the multi-frequency quartz wafer fabrication control method as described above.

[0091] The specific implementation of the multi-frequency quartz wafer fabrication control device of this application is basically the same as the embodiments of the multi-frequency quartz wafer fabrication control method described above, and will not be repeated here.

[0092] Furthermore, this invention also proposes a readable storage medium, comprising a computer-readable storage medium storing a multi-frequency quartz wafer fabrication control program thereon. The readable storage medium may be... Figure 1 The memory 1005 in the terminal can also be at least one of ROM (Read-Only Memory) / RAM (Random Access Memory), magnetic disk, optical disk, etc. The readable storage medium includes several instructions to cause a multi-frequency quartz wafer fabrication control device with a processor to execute the multi-frequency quartz wafer fabrication control method described in various embodiments of the present invention.

[0093] The specific implementation in the readable storage medium of this application is basically the same as the embodiments of the above-described multi-frequency quartz wafer fabrication and control method, and will not be repeated here.

[0094] It is understood that in the description of this specification, references to terms such as "one embodiment," "another embodiment," "other embodiments," or "first embodiment to Nth embodiment," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0095] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or system that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or system. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or system that includes that element.

[0096] The sequence numbers of the above embodiments of the present invention are for descriptive purposes only and do not represent the superiority or inferiority of the embodiments.

[0097] Through the above description of the embodiments, those skilled in the art can clearly understand that the methods of the above embodiments can be implemented by means of software plus necessary general-purpose hardware platforms. Of course, they can also be implemented by hardware, but in many cases the former is a better implementation method. Based on this understanding, the technical solution of the present invention, or the part that contributes to the prior art, can be embodied in the form of a software product. This computer software product is stored in a storage medium (such as ROM / RAM, magnetic disk, optical disk) as described above, and includes several instructions to cause a terminal device (which may be a mobile phone, computer, server, or network device, etc.) to execute the methods described in the various embodiments of the present invention.

[0098] The above are merely preferred embodiments of the present invention and do not limit the scope of the patent. Any equivalent structural or procedural transformations made based on the description and drawings of the present invention, or direct or indirect applications in other related technical fields, are similarly included within the scope of patent protection of the present invention.

Claims

1. A method for controlling the preparation of a multi-frequency quartz crystal wafer, characterized by, Includes the following steps: Obtain quartz wafer frequency requirement information uploaded by several users, and generate a multi-frequency quartz wafer fabrication task based on the quartz wafer frequency requirement information; Extract several multi-frequency quartz wafer fabrication sub-tasks from the multi-frequency quartz wafer fabrication task that have different frequency sub-wafer combination requirements; wherein, each multi-frequency quartz wafer fabrication sub-task includes the required number of quartz wafers for the corresponding frequency sub-wafer combination and the fabrication time limit; The wafer region thickness information of each wafer in the original wafer batch corresponding to the multi-frequency quartz wafer preparation task is measured. Based on the wafer region thickness information of each wafer, the thickness values ​​of the corresponding positions of several sub-wafers are formed and the wafer etching processing sequence is determined. Considering the optimal etching speed of the etching equipment, and in order to meet the requirements of the number of quartz wafers required for each frequency sub-wafer combination and the preparation time, an allocation strategy for each wafer in the original wafer batch and the multi-frequency quartz wafer preparation sub-task is generated. The allocation strategy for each wafer is sent to the etching equipment, so that when the etching equipment detects each wafer, it repeatedly performs etching operations several times according to the frequency sub-wafer combination requirements of the multi-frequency quartz wafer preparation sub-task corresponding to the wafer, until the thickness values ​​of the corresponding position regions of the wafer to form several sub-wafers meet the frequency sub-wafer combination requirements.

2. The method for controlling the preparation of a multi-frequency quartz crystal wafer according to claim 1, wherein Obtain frequency requirement information for quartz wafers uploaded by several users, and generate a multi-frequency quartz wafer fabrication task based on the frequency requirement information, specifically including: Obtain quartz wafer frequency requirement information uploaded by several users, and store the quartz wafer frequency requirement information sequentially in the constructed order database according to the upload time of each quartz wafer frequency requirement information to generate a quartz wafer manufacturing order database. The quartz wafer manufacturing order database is invoked to extract the required quantity and manufacturing period of quartz wafers corresponding to different frequency sub-wafer combinations for each quartz wafer frequency requirement within the target time period, thereby generating a multi-frequency quartz wafer manufacturing task.

3. The method of claim 1, wherein the step of preparing the multi-frequency quartz crystal wafer is performed by a method comprising the steps of: The multi-frequency quartz wafer fabrication task is extracted into several multi-frequency quartz wafer fabrication sub-task steps that require combinations of sub-wafers with different frequencies, specifically including: ​ Extract the required quantity and preparation time of quartz wafers corresponding to different frequency sub-wafer combinations for each quartz wafer frequency requirement information in the multi-frequency quartz wafer fabrication task; The required number of quartz wafers with the same frequency sub-wafer combination and the same preparation period is accumulated and calculated. Based on the accumulated calculation results, several multi-frequency quartz wafer preparation sub-tasks with different frequency sub-wafer combination requirements are generated.

4. The method for controlling the preparation of a multi-frequency quartz crystal wafer according to claim 1, wherein The step of measuring the wafer region thickness information of each wafer in the original wafer batch corresponding to the multi-frequency quartz wafer fabrication task specifically includes: The thickness of each wafer at each position in the original wafer batch corresponding to the multi-frequency quartz wafer preparation task is measured using a wafer thickness measurement device to obtain the thickness value of each wafer at each position. According to the predetermined corresponding position area of the plurality of sub-wafers of each wafer and the corresponding relationship of each wafer at each position, the thickness value of the corresponding position area of the plurality of sub-wafers formed in each wafer is determined, and the wafer area thickness information of each wafer is generated.

5. The method of claim 4, wherein the frequency of the quartz crystal is controlled by the frequency of the RF signal. According to the thickness value of the corresponding position area of the plurality of sub-wafers in the wafer area thickness information of each wafer and the wafer etching processing sequence, the optimal etching speed of the etching equipment is considered, the etching time is taken as the target, and the allocation strategy of each wafer in the original wafer batch and the multi-frequency quartz wafer preparation sub-task is generated, which specifically includes: According to the wafer thickness and wafer frequency relationship table of each sub-wafer, the frequency sub-wafer combination of each multi-frequency quartz wafer preparation sub-task is converted into a wafer thickness requirement combination; Based on the wafer thickness requirement combination of each multi-frequency quartz wafer preparation sub-task and the optimal etching speed of the etching equipment, the preparation deadline time is taken as the constraint, and the etching time is taken as the target, the allocation strategy of each wafer in the original wafer batch and the multi-frequency quartz wafer preparation sub-task is optimized and solved.

6. The method for controlling the preparation of a multi-frequency quartz crystal wafer according to claim 5, wherein Based on the wafer thickness requirement combination of each multi-frequency quartz wafer preparation sub-task and the optimal etching speed of the etching equipment, the preparation deadline time is taken as the constraint, and the etching time is taken as the target, the allocation strategy of each wafer in the original wafer batch and the multi-frequency quartz wafer preparation sub-task is optimized and solved. Based on the optimal etching speed of the etching equipment, the etching time of each wafer when the thickness value of the corresponding position area of the plurality of sub-wafers in the wafer is allocated to different multi-frequency quartz wafer preparation sub-tasks to execute the wafer thickness requirement combination of the corresponding multi-frequency quartz wafer preparation sub-task is calculated; According to the etching time, the time when the last quartz wafer of the corresponding frequency sub-wafer combination of each multi-frequency quartz wafer preparation sub-task is prepared after each wafer is allocated to the corresponding multi-frequency quartz wafer preparation sub-task is not later than the preparation deadline time as the constraint condition, and the total etching time when the quartz wafer requirement number of the corresponding frequency sub-wafer combination of each multi-frequency quartz wafer preparation sub-task is prepared after each wafer is allocated to the corresponding multi-frequency quartz wafer preparation sub-task is taken as the target, the allocation strategy of each wafer in the original wafer batch and the multi-frequency quartz wafer preparation sub-task is optimized and solved.

7. The method of claim 6, wherein the step of preparing the multi-frequency quartz crystal wafer is performed by the steps of: The allocation strategy of each wafer is sent to the etching equipment, so that the etching equipment repeatedly executes the etching action several times according to the frequency sub-wafer combination requirement of the corresponding multi-frequency quartz wafer preparation sub-task of the wafer when detecting each wafer, until the thickness value of the corresponding position area of the plurality of sub-wafers formed in the wafer meets the frequency sub-wafer combination requirement step, which specifically includes: ​ The allocation strategy of each wafer is sent to the etching equipment, so that the etching equipment repeatedly executes the etching action several times according to the frequency sub-wafer combination requirement of the corresponding multi-frequency quartz wafer preparation sub-task of the wafer when detecting each wafer, until the thickness value of the corresponding position area of the plurality of sub-wafers formed in the wafer meets the frequency sub-wafer combination requirement step, which specifically includes: Before performing the etching action of a unit etching thickness on each wafer, it is determined whether the thickness value of the corresponding position area of each sub wafer meets the wafer thickness requirement of the corresponding position area in the frequency sub wafer combination requirement. If yes, the etching action of a unit etching thickness of the subsequent sub wafer is stopped. If not, the etching action of a unit etching thickness of the subsequent sub wafer is continued until the thickness value of the corresponding position area of the several sub wafers formed by the wafer meets the frequency sub wafer combination requirement.

8. A multi-frequency quartz wafer fabrication control device, characterized in that, Comprise: An acquisition module is configured to acquire several user-uploaded quartz wafer frequency requirement information, and generate a multi-frequency quartz wafer preparation task based on the quartz wafer frequency requirement information; An extraction module is configured to extract several multi-frequency quartz wafer preparation sub-tasks with different frequency sub wafer combination requirements in the multi-frequency quartz wafer preparation task; wherein each multi-frequency quartz wafer preparation sub-task includes the number of quartz wafer requirements and the preparation deadline time of the corresponding frequency sub wafer combination; A generation module is configured to measure the wafer area thickness information of each wafer in the original wafer batch corresponding to the multi-frequency quartz wafer preparation task, and generate an allocation strategy of each wafer and the multi-frequency quartz wafer preparation sub-task according to the thickness value of the several sub wafers corresponding to the position area in the wafer area thickness information of each wafer and the wafer etching processing sequence, and considering the best etching speed of the etching equipment, to meet the number of quartz wafer requirements and the preparation deadline time of each frequency sub wafer combination as the requirement; An execution module is configured to send the allocation strategy of each wafer to the etching equipment, so that the etching equipment repeatedly performs the etching action several times according to the frequency sub wafer combination requirement of the multi-frequency quartz wafer preparation sub-task corresponding to the wafer when detecting the wafer, until the thickness value of the several sub wafers corresponding to the position area of the wafer meets the frequency sub wafer combination requirement.

9. A multi-frequency quartz wafer fabrication control device, characterized in that, The multi-frequency quartz wafer preparation control device comprises a memory, a processor, and a multi-frequency quartz wafer preparation control program stored on the memory and executable on the processor, and the multi-frequency quartz wafer preparation control program implements the steps of the multi-frequency quartz wafer preparation control method according to any one of claims 1 to 7 when executed by the processor.

10. A storage medium, characterized by The storage medium stores a multi-frequency quartz wafer preparation control program, and the multi-frequency quartz wafer preparation control program implements the steps of the multi-frequency quartz wafer preparation control method according to any one of claims 1 to 7 when executed by the processor.

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