Film coating equipment and method for mass energy asynchronous deposition

Abstract

The invention provides mass-energy asynchronous deposition coating equipment and method.The mass-energy asynchronous deposition coating equipment comprises a rack, a workpiece frame, a partition baffle, a deposition ion source and a cleaning ion source; the workpiece frame is rotatably mounted on the rack, and a substrate is fixed on the workpiece frame; the partition baffle is fixedly installed on the rack and is perpendicular to the workpiece frame, a gap is formed between the partition baffle and the workpiece frame, and the partition baffle divides the plane where the workpiece frame is located into a deposition area and a cleaning area; the deposition ion source is used for sputtering deposition ions to the deposition area; the cleaning ion source is used for sputtering cleaning ions to the cleaning area, and an included angle is formed between the emission direction of the cleaning ions and the plane where the workpiece frame is located. The plane where the workpiece frame is located is divided into a deposition area and a cleaning area through the partition baffle, the deposition process and the cleaning process are carried out asynchronously, the single-step particle deposition rate is reduced to the A / s magnitude from the nm / s magnitude in a traditional preparation technology, and the situation that particle pollution attached to the surface of a substrate is rapidly covered by deposition ions in the coating process is avoided; particle pollution attached to the substrate during film coating is cleaned in time, so that the formation of knot defects can be inhibited, and the film quality is improved.

Description

Technical Field

[0001] The present invention relates to the field of film coating technology, and in particular to a film coating device and method for mass-energy asynchronous deposition. Background Art

[0002] Optical vacuum evaporation coating equipment is often used in industrial production to coat the surface of products with a wide range of products, such as magnetic materials, medical equipment parts, circuit boards, electronic components, semiconductor materials, optical devices, optoelectronic products, mobile phone accessories, accessories or their raw materials. The evaporation method of electron beam evaporation coating can greatly increase the deposition rate of the film, but due to the low energy of the material vapor molecules and the low mobility of the gas phase molecules to the substrate surface, the optical film obtained generally has a low bonding force with the substrate, and the stability and reliability of the film are poor. Using the ion beam assisted deposition method, during the film deposition process, ions carrying a certain kinetic energy are used to collide and evaporate atoms or molecules. After momentum exchange, the deposited atoms or molecules obtain a larger migration momentum on the film surface. This method can effectively improve the problem of loose film structure caused by thermal evaporation deposition, and can enhance the controllability of the film.

[0003] In the prior art, ion beam assisted deposition generally involves depositing ions and auxiliary particles arriving at the substrate surface at the same time. For high-power laser thin films, the film deposition rate is in the order of nm / s. During the coating process, particle contamination attached to the substrate surface will be quickly covered by the deposited ions and will be difficult to be sputtered out under the action of the auxiliary ion beam, resulting in nodule defects in the film and damage to the thin film components. Summary of the invention

[0004] In view of this, the present invention proposes a coating device and method for mass-energy asynchronous deposition to solve the technical problem proposed in the above background technology that the particle contamination attached to the surface of the substrate during the coating process will be quickly covered by the deposited ions and is difficult to be sputtered out under the action of the auxiliary ion beam, resulting in the formation of nodule defects in the thin film and causing damage to the thin film components.

[0005] The technical solution of the present invention is achieved in this way:

[0006] In a first aspect, the present invention provides a coating device for mass-energy asynchronous deposition, comprising a frame, a workpiece frame, a partition baffle, a deposition ion source and a cleaning ion source, wherein:

[0007] The workpiece rack is rotatably mounted on the frame, and a substrate is fixed on the workpiece rack;

[0008] The partition baffle is fixedly mounted on the frame and is arranged perpendicular to the workpiece rack. There is a gap between the partition baffle and the workpiece rack. The partition baffle divides the plane where the workpiece rack is located into a deposition area and a cleaning area.

[0009] The deposition ion source is located on one side of the separation baffle and is used for sputtering and depositing ions toward the deposition area;

[0010] The cleaning ion source is located at the other side of the partition baffle, and is used for sputtering cleaning ions toward the cleaning area. The emission direction of the cleaning ions has an angle with respect to the plane where the workpiece holder is located.

[0011] On the basis of the above technical solution, preferably, the angle between the emission direction of the cleaning ions and the plane where the workpiece holder is located can be adjusted.

[0012] On the basis of the above technical solution, preferably, the angle between the emission direction of the cleaning ions and the plane where the workpiece holder is located is 10-80 degrees.

[0013] On the basis of the above technical solution, preferably, the voltage of the cleaning ion source is 500-1200V, and the power is 500-2000W.

[0014] On the basis of the above technical solution, preferably, the rotation speed of the workpiece rack is 10-100r / min.

[0015] On the basis of the above technical solution, preferably, the deposition zone performs single-step near-atomic layer deposition.

[0016] On the basis of the above technical solution, preferably, it further includes a first target material and a second target material, wherein the first target material and the second target material are arranged opposite to each other on both sides of the cleaning area, and the first target material and the second target material are sputtered and attached to the substrate to grow into a film.

[0017] On the basis of the above technical solution, preferably, the first target material and the second target material are made of different materials.

[0018] In a second aspect, the present invention provides a coating method of mass-energy asynchronous deposition, using the coating device of mass-energy asynchronous deposition described in the first aspect, comprising:

[0019] sputtering cleaning ions toward the cleaning area through a cleaning ion source;

[0020] sputtering ions to the deposition area through a deposition ion source to form a film on the substrate;

[0021] By driving the workpiece rack to rotate around the rack, impurity particles attached to the substrate during deposition in the deposition area will be sputtered and cleaned by cleaning ions when the substrate rotates to the cleaning area.

[0022] On the basis of the above technical solution, preferably, the sputtering of cleaning ions to the cleaning area by a cleaning ion source comprises: adjusting an angle of an emission direction of the cleaning ions relative to a plane where the workpiece holder is located.

[0023] The coating device of the present invention for asynchronous mass-energy deposition has the following beneficial effects compared with the prior art:

[0024] (1) The plane where the workpiece holder is located is divided into a deposition area and a cleaning area by the partition baffle, and the deposition and cleaning processes are performed asynchronously, so that the single-step particle deposition rate is reduced from the nm / s level in the traditional preparation process to the A / s level, thereby preventing the particle contamination attached to the substrate surface during the coating process from being quickly covered by the deposited ions. The particle contamination attached during the particle deposition stage will be cleaned by reverse sputtering during the ion sputtering cleaning stage. The particle contamination attached to the substrate during the coating process can be cleaned in time, which can inhibit the formation of nodule defects and improve the quality of the film; by making the emission direction of the cleaning ions have an angle with respect to the plane where the workpiece holder is located, the cleaning ions are obliquely incident on the substrate, which can more effectively clean the impurity particles;

[0025] (2) The angle between the emission direction of the cleaning ions and the plane where the workpiece holder is located can be adjusted, and the inclination angle relative to the substrate can be adjusted as needed to achieve the best cleaning effect, and the sputtering area range can be adjusted to be suitable for cleaning and deposition of thin films of different sizes;

[0026] (3) The voltage of the cleaning ion source can be adjusted within the range of 500-1200V, and the power can be adjusted within the range of 500-2000W, which can flexibly change the ion beam intensity, can clean impurities with different adhesion strengths, and make the film tight at the same time to meet different film plating requirements;

[0027] (4) The rotation speed of the workpiece holder can be adjusted within the range of 10-100r / min. The slower the rotation speed of the workpiece holder, the faster the deposition speed and the higher the coating rate. However, the cleaning effect of impurities will be reduced. A balance point is found between the cleaning effect and the deposition speed to meet different thin film deposition requirements. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0029] Figure 1It is a structural schematic diagram of a coating device for mass-energy asynchronous deposition in an embodiment of the present invention;

[0030] Figure 2 It is a front view of a coating device (without the frame) for mass-energy asynchronous deposition in an embodiment of the present invention;

[0031] Figure 3 It is a schematic diagram of the working principle of the coating device of mass-energy asynchronous deposition in an embodiment of the present invention;

[0032] Figure 4 is a structural schematic diagram of the relative positions of the cleaning ion source and the workpiece holder in an embodiment of the present invention;

[0033] Figure 5 Schematic diagram of the process of the mass-energy asynchronous deposition coating method in an embodiment of the present invention.

[0034] Description of reference numerals: 1-frame, 2-workpiece frame, 3-partition baffle, 4-deposition ion source, 5-cleaning ion source, 6-substrate, 7-deposition baffle, 8-impurity particles;

[0035] 100-deposition area, 200-cleaning area. DETAILED DESCRIPTION

[0036] The following will be combined with the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0037] Reference Figure 1-4 As shown, the first embodiment of the present invention provides a coating device for mass-energy asynchronous deposition, including a frame 1, a workpiece frame 2, a partition baffle 3, a deposition ion source 4 and a cleaning ion source 5, wherein:

[0038] The workpiece rack 2 is rotatably mounted on the frame 1, and a substrate 6 is fixed on the workpiece rack 2;

[0039] The partition baffle 3 is fixedly mounted on the frame 1 and is arranged perpendicular to the workpiece rack 2. There is a gap between the partition baffle 3 and the workpiece rack 2. The partition baffle 3 divides the plane where the workpiece rack 2 is located into a deposition area 100 and a cleaning area 200. The gap between the partition baffle 3 and the workpiece rack 2 is very small, almost fitting the workpiece rack 2, but does not affect the rotation of the workpiece rack 2. The partition baffle 3 does not rotate with the workpiece rack 2, thereby dividing the plane where the workpiece rack 2 is located into a deposition area 100 and a cleaning area 200, so that the substrate 6 is alternately deposited and cleaned.

[0040] The deposition ion source 4 is located on one side of the partition baffle 3 and is used to sputter deposition ions to the deposition area 100; the deposition ions are reflected by the deposition baffle 7 and reach the deposition area 100, and the deposition baffle 7 and the deposition ion source 4 are located on the same side.

[0041] The cleaning ion source 5 is located at the other side of the partition baffle 3 and is used for sputtering cleaning ions toward the cleaning area 200 . The emission direction of the cleaning ions has an angle with respect to the plane where the workpiece holder 2 is located.

[0042] The coating equipment of asynchronous mass-energy deposition proposed in the embodiment of the present invention divides the plane where the workpiece holder 2 is located into a deposition area 100 and a cleaning area 200 by the partition baffle 3. The deposition and cleaning processes are performed asynchronously, so that the single-step particle deposition rate is reduced from the nm / s level in the traditional preparation process to the A / s level (1A=0.1nm, A is the unit of length, angstrom), thereby preventing the particle contamination attached to the surface of the substrate 6 during the coating process from being quickly covered by the deposited ions. The particle contamination attached during the particle deposition stage will be cleaned by reverse sputtering during the ion sputtering cleaning stage. The particle contamination attached to the substrate 6 during the coating can be cleaned in time, which can inhibit the formation of nodule defects and improve the quality of the film. By making the emission direction of the cleaning ions have an angle relative to the plane where the workpiece holder 2 is located, the cleaning ions are obliquely incident on the substrate 6, which can more effectively clean the impurity particles 8.

[0043] In some embodiments, during the conventional coating process, the cleaning ion source 5 is fixed in direction and placed perpendicular to the substrate 6, and the cleaning effect on the impurity particles 8 attached to the surface of the substrate 6 is poor. To solve the above problems, in this embodiment, the emission direction of the cleaning ions can be adjusted at an angle relative to the plane where the workpiece holder 2 is located. The inclination angle relative to the substrate 6 can be adjusted as needed to achieve the optimal cleaning effect, and the sputtering area range can be adjusted to suit the cleaning and deposition of films of different sizes.

[0044] In some embodiments, the angle of the emission direction of the cleaning ions relative to the plane where the workpiece holder 2 is located is 10-80 degrees. At an angle of 10-80 degrees, when the cleaning ion source 5 is placed perpendicular to the substrate 6, the cleaning effect is better. Therefore, it is preferred to set the angle of the emission direction of the cleaning ions relative to the plane where the workpiece holder 2 is located to be 10-80 degrees.

[0045] In some embodiments, the voltage of the cleaning ion source 5 is 500-1200 V, and the power is 500-2000 W. The voltage of the cleaning ion source 5 can be adjusted within the range of 500-1200 V, and the power can be adjusted within the range of 500-2000 W, so that the ion beam intensity can be flexibly changed, impurities with different adhesion strengths can be cleaned, and the film can be made tight at the same time to meet different film plating requirements.

[0046] In some embodiments, the rotation speed of the workpiece rack 2 is 10-100 r / min. The rotation speed of the workpiece rack 2 can be adjusted within the range of 10-100 r / min. The faster the rotation speed of the workpiece rack 2, the slower the deposition speed, the higher the coating rate, but at the same time the cleaning effect of impurities will be reduced. A balance point is found between the cleaning effect and the deposition speed to meet different film deposition requirements.

[0047] In some embodiments, the deposition area 100 performs single-step near-atomic layer deposition, which can achieve precise control of the film deposition rate, reduce the use of light-controlled or crystal-controlled components, and improve product quality.

[0048] In some embodiments, the film coating equipment for mass-energy asynchronous deposition further includes a first target material and a second target material, the first target material and the second target material are arranged on both sides of the cleaning area 200, and the first target material and the second target material are sputtered and attached to the substrate 6 to grow into a film. The first target material and the second target material are sputtered and attached to the substrate 6 to grow into a film, and the deposition process is performed. At the same time, the cleaning ion source 5 located on one side of the cleaning area 200 sputters and cleans the thin film on the substrate 6. The film deposition and the film cleaning are performed asynchronously and alternately, which to a certain extent avoids the problem that the impurity particles 8 are covered by the newly attached deposition ions before being cleaned by the cleaning ion source 5, resulting in the impurity particles 8 remaining in the film and causing defects, which can greatly reduce the defects in the film, thereby reducing the nodule defects in the film after film formation, improving the quality of the film, and making it more suitable for high-power lasers.

[0049] In some embodiments, the first target material and the second target material are made of different materials. The first target material and the second target material can be made of different materials to meet different film requirements, such as two of Ta target, Ti target, Si target, etc.

[0050] Based on the same concept, the second embodiment of the present invention is combined with Figure 5 As shown, a coating method of mass-energy asynchronous deposition is proposed, using the coating device of mass-energy asynchronous deposition described in the first aspect, comprising:

[0051] Step S1: sputtering cleaning ions to the cleaning area 200 through the cleaning ion source 5;

[0052] Step S2: sputtering ions to the deposition area 100 through the deposition ion source 4 to form a film on the substrate 6;

[0053] Step S3: by driving the workpiece rack 2 to rotate around the frame 1 , the impurity particles attached to the substrate 6 during deposition in the deposition area 100 will be cleaned by the cleaning ion sputtering when the substrate 6 rotates to the cleaning area 200 .

[0054] In some embodiments, the sputtering of cleaning ions to the cleaning area 200 by the cleaning ion source 5 includes: adjusting the angle of the emission direction of the cleaning ions relative to the plane where the workpiece holder 2 is located. The tilt angle relative to the substrate 6 is adjusted as needed to achieve the best cleaning effect, and the sputtering area range can be adjusted to be suitable for cleaning and deposition of films of different sizes.

[0055] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A coating device for mass-energy asynchronous deposition, characterized in that: It includes a frame, a workpiece frame, a separation baffle, a deposition ion source and a cleaning ion source, wherein: The workpiece rack is rotatably mounted on the frame, and a substrate is fixed on the workpiece rack; The partition baffle is fixedly mounted on the frame and is arranged perpendicular to the workpiece rack. There is a gap between the partition baffle and the workpiece rack. The partition baffle divides the plane where the workpiece rack is located into a deposition area and a cleaning area. The deposition ion source is located on one side of the separation baffle and is used for sputtering deposition ions to the deposition area; The cleaning ion source is located at the other side of the partition baffle, and is used for sputtering cleaning ions toward the cleaning area. The emission direction of the cleaning ions has an angle with respect to the plane where the workpiece holder is located.

2. The coating device for mass-energy asynchronous deposition as claimed in claim 1, characterized in that: The angle of the emission direction of the cleaning ions relative to the plane where the workpiece holder is located can be adjusted.

3. The coating device for mass-energy asynchronous deposition as claimed in claim 1, characterized in that: The angle between the emission direction of the cleaning ions and the plane where the workpiece rack is located is 10-80 degrees.

4. The coating device for mass-energy asynchronous deposition as claimed in claim 1, characterized in that: The voltage of the cleaning ion source is 500-1200V, and the power is 500-2000W.

5. The coating device for asynchronous mass-energy deposition as claimed in claim 1, characterized in that: The rotation speed of the workpiece rack is 10-100r / min.

6. The coating device for mass-energy asynchronous deposition as claimed in claim 1, characterized in that: The deposition zone performs single-step near-atomic layer deposition.

7. The coating device for mass-energy asynchronous deposition as claimed in claim 1, characterized in that: It also includes a first target material and a second target material. The first target material and the second target material are arranged opposite to each other at two sides of the cleaning area. The first target material and the second target material are sputtered out and attached to the substrate to grow into a film.

8. The coating device for mass-energy asynchronous deposition as claimed in claim 7, characterized in that: The first target and the second target are made of different materials.

9. A method for coating by mass-energy asynchronous deposition, using the coating device for mass-energy asynchronous deposition according to any one of claims 1 to 8, characterized in that: include: sputtering cleaning ions toward the cleaning area through a cleaning ion source; sputtering ions to the deposition area through a deposition ion source to form a film on the substrate; By driving the workpiece rack to rotate around the rack, impurity particles attached to the substrate during deposition in the deposition area will be sputtered and cleaned by cleaning ions when the substrate rotates to the cleaning area.

10. The film coating method of mass-energy asynchronous deposition as claimed in claim 9, characterized in that: The sputtering of cleaning ions toward the cleaning area through a cleaning ion source includes: adjusting an angle between an emission direction of the cleaning ions and a plane where the workpiece holder is located.

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