Method for correcting grinding rate of grinding disc

Abstract

The invention discloses a method for correcting the grinding rate of a grinding disc, which comprises the following steps of: firstly, controlling the grinding disc to pre-grind a semiconductor element according to a preset grinding rate, detecting the height of the semiconductor element in the pre-grinding process, and then determining an actual grinding rate based on a height detection result of the semiconductor element; and when the actual grinding rate exceeds a set threshold value of a preset grinding rate, correcting the preset grinding rate, updating the preset grinding rate based on a correction result, and returning to the step of controlling the grinding disc to pre-grind the semiconductor element according to the preset grinding rate, in this way, the preset grinding rate of the grinding disc is corrected, so that in the process of normally using the grinding disc, the grinding rate of the grinding disc to the semiconductor element can be accurately controlled based on the final preset grinding rate, and the grinding efficiency of the semiconductor element is improved. Therefore, the processing precision of the semiconductor element is improved.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor processing, and in particular to a method for correcting the grinding rate of a grinding disc. Background Art

[0002] At present, the processing of semiconductor components includes grinding with a grinding wheel. During grinding, the grinding wheel is controlled by a computer device to grind the semiconductor components, specifically including the grinding of the semiconductor components based on a predetermined grinding rate. The accuracy of the parameter of the predetermined grinding rate is an important control indicator for the grinding of semiconductor components. For new grinding wheels and grinding wheels that have been used for a period of time, it is particularly necessary to correct their predetermined grinding rates. Among them, for grinding wheels that have been used for a period of time, as the grinding wheels change with the length of use, the actual grinding rate of the grinding wheels for semiconductor components will also change. Therefore, it is very important to correct the grinding rate of the grinding wheels. Summary of the invention

[0003] In view of the deficiencies in the prior art, the present invention provides a method for correcting the grinding rate of a grinding disc, comprising:

[0004] Controlling the grinding disc to pre-grind the semiconductor element according to a predetermined grinding rate; wherein, during the pre-grinding process, the height of the semiconductor element is detected;

[0005] Determining an actual polishing rate based on a height detection result of the semiconductor element;

[0006] When the actual grinding rate exceeds a set threshold of a predetermined grinding rate, modifying the predetermined grinding rate;

[0007] The predetermined grinding rate is updated based on the correction result, and the process returns to the step of controlling the grinding disc to pre-grind the semiconductor element according to the predetermined grinding rate until the actual grinding rate does not exceed the set threshold of the predetermined grinding rate.

[0008] As a preferred solution, the method of controlling the grinding disc to pre-grind the semiconductor element according to a predetermined grinding rate specifically includes:

[0009] dividing the grinding area of ​​the grinding disc into a plurality of grinding sub-areas;

[0010] Controlling each grinding sub-area of ​​the grinding disk to pre-grind the semiconductor element according to a predetermined grinding rate corresponding to each grinding sub-area;

[0011] The determining of the actual grinding rate based on the height detection result of the semiconductor element specifically includes:

[0012] Based on the height detection result of the semiconductor element in each grinding sub-area, determining the actual grinding rate corresponding to each grinding sub-area;

[0013] When the actual grinding rate exceeds a set threshold of a predetermined grinding rate, the predetermined grinding rate is corrected, specifically comprising:

[0014] When the actual grinding rate corresponding to any of the grinding sub-regions exceeds a set threshold of the predetermined grinding rate, the predetermined grinding rate of the corresponding grinding sub-region is corrected.

[0015] As a preferred solution, the method of updating the predetermined grinding rate based on the correction result and returning to the step of controlling the grinding disc to pre-grind the semiconductor element according to the predetermined grinding rate until the actual grinding rate does not exceed the set threshold value of the predetermined grinding rate specifically includes:

[0016] Based on the correction results of each grinding sub-area, each predetermined grinding rate is updated, and the predetermined grinding rate corresponding to each grinding sub-area is returned to control each grinding sub-area of ​​the grinding disk to perform a pre-grinding step on the semiconductor element respectively until the actual grinding rate of each grinding sub-area does not exceed the set threshold value of the predetermined grinding rate.

[0017] As a preferred solution, the method of determining the actual grinding rate corresponding to each grinding sub-area based on the height detection result of the semiconductor element in each grinding sub-area specifically includes:

[0018] The actual grinding rate corresponding to each grinding sub-area is calculated by the following formula:

[0019] LR=(H2-H1) / (t2-t1)

[0020] Wherein, LR is the actual grinding rate; H2 is the height of the semiconductor element after pre-grinding; H1 is the height of the semiconductor element before pre-grinding; t2 is the time after grinding; and t1 is the time before grinding.

[0021] As a preferred solution, when the actual grinding rate corresponding to any of the grinding sub-areas exceeds the set threshold of the predetermined grinding rate, the predetermined grinding rate of the corresponding grinding sub-area is corrected, specifically including:

[0022] When the actual grinding rate corresponding to any of the grinding sub-areas exceeds a set threshold of a predetermined grinding rate, calculating a difference between the actual grinding rate corresponding to the grinding sub-area and the predetermined grinding rate;

[0023] Determine a correction parameter corresponding to the difference based on the difference and a pre-configured mapping relationship between the difference between the actual grinding rate and the predetermined grinding rate and the correction parameter;

[0024] Based on the determined correction parameter, the predetermined grinding rate of the corresponding grinding sub-region is corrected.

[0025] As a preferred solution, the predetermined grinding rate of the corresponding grinding sub-area is corrected based on the determined correction parameter, specifically including:

[0026] The correction result is calculated by the following formula:

[0027] Z=m+c

[0028] Wherein, Z represents the correction result of the predetermined grinding rate of the grinding sub-area; m represents the predetermined grinding rate of the grinding sub-area; and c represents the correction parameter.

[0029] As a preferred solution, the height detection of the semiconductor element specifically includes:

[0030] Detecting the height of semiconductor components by a probe device;

[0031] A height detection result of the semiconductor element by the probe device is received.

[0032] Compared with the prior art, the beneficial effect of the embodiments of the present invention lies in: the embodiments of the present invention provide a method for correcting the grinding rate of a grinding disk, first, the grinding disk is controlled to pre-grind the semiconductor element according to a predetermined grinding rate, and the height of the semiconductor element is detected during the pre-grinding process, and then the actual grinding rate is determined based on the height detection result of the semiconductor element. When the actual grinding rate exceeds the set threshold of the predetermined grinding rate, the predetermined grinding rate is corrected, the predetermined grinding rate is updated based on the correction result, and the process returns to the step of controlling the grinding disk to pre-grind the semiconductor element according to the predetermined grinding rate until the actual grinding rate does not exceed the set threshold of the predetermined grinding rate. In this way, the predetermined grinding rate of the grinding disk is corrected, so that during the normal use of the grinding disk, the grinding rate of the grinding disk for the semiconductor element can be accurately controlled based on the final predetermined grinding rate, thereby improving the processing accuracy of the semiconductor element. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 is a schematic flow chart of a method for correcting a grinding rate of a grinding disc in an embodiment of the present invention;

[0034] Figure 2 is a schematic diagram of the division of the grinding sub-areas of the grinding disc in an embodiment of the present invention;

[0035] Figure 3 is a schematic diagram of a grinding disc in an embodiment of the present invention for detecting the height of a semiconductor element;

[0036] Figure 4 4 is a flow chart of a method for correcting the grinding rate of a grinding disc in an embodiment of the present invention. DETAILED DESCRIPTION

[0037] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0038] See also Figure 1 As shown, it is a schematic flow chart of the method for correcting the grinding rate of the grinding disc in an embodiment of the present invention.

[0039] The method for correcting the grinding rate of the grinding disc according to the embodiment of the present invention comprises:

[0040] Step S101, controlling the grinding disc to pre-grind the semiconductor element according to a predetermined grinding rate; wherein, during the pre-grinding process, the height of the semiconductor element is detected;

[0041] Step S102, determining an actual polishing rate based on a height detection result of the semiconductor element;

[0042] Step S103, when the actual grinding rate exceeds a set threshold of the predetermined grinding rate, the predetermined grinding rate is corrected;

[0043] Step S104, updating the predetermined grinding rate based on the correction result, and returning to the step of controlling the grinding disc to pre-grind the semiconductor element according to the predetermined grinding rate until the actual grinding rate does not exceed the set threshold of the predetermined grinding rate.

[0044] In an embodiment of the present invention, first, the grinding wheel is controlled to pre-grind the semiconductor element according to a predetermined grinding rate, and the height of the semiconductor element is detected during the pre-grinding process. Then, the actual grinding rate is determined based on the height detection result of the semiconductor element. When the actual grinding rate exceeds the set threshold value of the predetermined grinding rate, the predetermined grinding rate is corrected, and the predetermined grinding rate is updated based on the correction result, and the process returns to the step of controlling the grinding wheel to pre-grind the semiconductor element according to the predetermined grinding rate until the actual grinding rate does not exceed the set threshold value of the predetermined grinding rate. In this way, the predetermined grinding rate of the grinding wheel is corrected, so that during the normal use of the grinding wheel, the grinding rate of the semiconductor element by the grinding wheel can be accurately controlled based on the final predetermined grinding rate, thereby improving the processing accuracy of the semiconductor element.

[0045] In a specific implementation, the grinding disc grinding rate correction method is executed by a computer device. In an embodiment of the present invention, the semiconductor element can be, for example, a strip-shaped semiconductor, which is cut from a wafer and used to manufacture a magnetic head of a hard disk drive.

[0046] In practical applications, it is particularly necessary to calibrate the predetermined grinding rate for new grinding discs and grinding discs that have been used for a period of time. For grinding discs that have been used for a period of time, the actual grinding rate of the grinding disc for semiconductor components will also change as the grinding disc changes with the length of time it is used. In addition, since the grinding disc processes semiconductor components at different positions on the grinding disc surface, the degree of change in different areas of the grinding disc will be different, so it is very important to correct the grinding rate of the grinding disc.

[0047] See also Figure 4 Before pre-grinding the semiconductor element, the problematic grinding disc and the new grinding disc can be corrected first. After pre-grinding the semiconductor element, the actual grinding rate of the grinding disc is calculated. If the actual grinding rate exceeds the set threshold of the predetermined grinding rate, the predetermined grinding rate of the grinding disc is corrected. If the actual grinding rate does not exceed the set threshold of the predetermined grinding rate, it means that the setting of the predetermined grinding rate of the grinding disc meets the accuracy requirements and can be put into normal production operation. It should be noted that the set threshold of the predetermined grinding rate can be set according to the actual use requirements. The set threshold of the predetermined grinding rate reflects the error tolerance range for the predetermined grinding rate. The smaller the set threshold, the higher the grinding rate accuracy of the grinding disc.

[0048] In an optional embodiment, the step S101 of "controlling the grinding disc to pre-grind the semiconductor element according to a predetermined grinding rate" specifically includes:

[0049] dividing the grinding area of ​​the grinding disc into a plurality of grinding sub-areas;

[0050] Controlling each grinding sub-area of ​​the grinding disk to pre-grind the semiconductor element according to a predetermined grinding rate corresponding to each grinding sub-area;

[0051] The step S102 of “determining the actual polishing rate based on the height detection result of the semiconductor element” specifically includes:

[0052] Based on the height detection result of the semiconductor element in each grinding sub-area, the actual grinding rate corresponding to each grinding sub-area is determined.

[0053] The step S103 “when the actual grinding rate exceeds the set threshold of the predetermined grinding rate, correcting the predetermined grinding rate” specifically includes:

[0054] When the actual grinding rate corresponding to any of the grinding sub-regions exceeds a set threshold of the predetermined grinding rate, the predetermined grinding rate of the corresponding grinding sub-region is corrected.

[0055] The step S104 of "updating the predetermined grinding rate based on the correction result, and returning to the step of controlling the grinding disc to pre-grind the semiconductor element according to the predetermined grinding rate until the actual grinding rate does not exceed the set threshold of the predetermined grinding rate" specifically includes:

[0056] Based on the correction results of each grinding sub-area, each predetermined grinding rate is updated, and the predetermined grinding rate corresponding to each grinding sub-area is returned to control each grinding sub-area of ​​the grinding disk to perform a pre-grinding step on the semiconductor element respectively until the actual grinding rate of each grinding sub-area does not exceed the set threshold value of the predetermined grinding rate.

[0057] In this embodiment, in order to further optimize and control the grinding rate of the grinding disk, the grinding disk is divided into a plurality of grinding sub-areas, and the actual grinding rate of each grinding sub-area is calculated. The grinding rates of the plurality of grinding sub-areas are controlled and planned, and the grinding rates of the grinding sub-areas that do not meet the requirements are corrected and adjusted one by one until all grinding sub-areas meet the set threshold. For the grinding rate measurement of the semiconductor element in each grinding sub-area, different data can be obtained by changing the predetermined position where the semiconductor element contacts the grinding disk. Therefore, a more preferred step can be performed. First, the grinding disk is divided into grinding sub-areas. For example, for a circular grinding disk, the grinding sub-areas can be divided in the radial and rotational directions of the grinding disk. For example, Figure 2 As shown, the surface of the grinding disc is in the shape of a ring, with an inner radius of SR and an outer radius of BR. It is divided into 5 surface areas along the radial direction of the grinding disc, and is divided into 10 surface areas along the rotation direction of the grinding disc. In this way, the grinding area of ​​the grinding disc is divided into 50 grinding sub-areas. Among them, each surface area in the radial direction of the grinding disc can be defined according to the following formula:

[0058] SRTemp=SR+(BR-SR)*(k-1) / Dzone

[0059] BRTemp=SR+(BR-SR)*k / DZone

[0060] Among them, SRTemp represents the inner radius of the kth disc surface area along the radial direction of the grinding disc, BRTemp represents the outer radius of the kth disc surface area along the radial direction of the grinding disc, and Dzone represents the number of disc surface areas along the radial direction of the grinding disc. The specific disc surface area along the radial direction of the grinding disc can be located by SRTemp and BRTemp.

[0061] X1=SRTemp*Cos(π*((((i-1)*(360 / CZone))+180) / 180))

[0062] Y1=SRTemp*Sin(π*((((i-1)*(360 / CZone))+180) / 180))

[0063] X2=BRTemp*Cos(π*((((i-1)*(360 / CZone))+180) / 180))

[0064] Y2=BRTemp*Sin(π*((((i-1)*(360 / CZone))+180) / 180))

[0065] Wherein, X1 represents the horizontal coordinate of the first positioning point of the i-th disc surface area along the rotation direction of the grinding disc; Y1 represents the vertical coordinate of the first positioning point of the i-th disc surface area along the rotation direction of the grinding disc; X2 represents the horizontal coordinate of the second positioning point of the i-th disc surface area along the rotation direction of the grinding disc; Y2 represents the vertical coordinate of the second positioning point of the i-th disc surface area along the rotation direction of the grinding disc; CZone represents the number of disc surface areas along the rotation direction of the grinding disc. The coordinates (X1, Y1) of the first positioning point of the specific disc surface area along the rotation direction of the grinding disc are determined by X1 and Y1, and the coordinates (X2, Y2) of the second positioning point of the specific disc surface area along the rotation direction of the grinding disc are determined by X2 and Y2. In this way, the specific disc surface area along the rotation direction of the grinding disc is determined by two positioning points.

[0066] In a specific implementation, for example, the grinding rate of each grinding sub-area can be measured and corrected in sequence from the inner radius to the outer radius of the grinding wheel and in sequence along the rotation direction of the grinding wheel or in the opposite direction of the rotation direction. Of course, the specified grinding sub-area can also be measured and corrected in other required sequences according to actual use requirements, and the specified grinding sub-area can also be measured and corrected according to actual use requirements. No further details will be given here.

[0067] In an optional implementation, the determining of the actual grinding rate corresponding to each grinding sub-area based on the height detection result of the semiconductor element in each grinding sub-area specifically includes:

[0068] The actual grinding rate corresponding to each grinding sub-area is calculated by the following formula:

[0069] LR=(H2-H1) / (t2-t1)

[0070] Wherein, LR is the actual grinding rate; H2 is the height of the semiconductor element after pre-grinding; H1 is the height of the semiconductor element before pre-grinding; t2 is the time after grinding; and t1 is the time before grinding.

[0071] In an optional embodiment, when the actual grinding rate corresponding to any of the grinding sub-areas exceeds a set threshold of the predetermined grinding rate, the predetermined grinding rate of the corresponding grinding sub-area is corrected, specifically including:

[0072] When the actual grinding rate corresponding to any of the grinding sub-areas exceeds a set threshold of a predetermined grinding rate, calculating a difference between the actual grinding rate corresponding to the grinding sub-area and the predetermined grinding rate;

[0073] Determine a correction parameter corresponding to the difference based on the difference and a pre-configured mapping relationship between the difference between the actual grinding rate and the predetermined grinding rate and the correction parameter;

[0074] Based on the determined correction parameter, the predetermined grinding rate of the corresponding grinding sub-region is corrected.

[0075] In a specific implementation, by pre-configuring a mapping relationship between the difference between the actual grinding rate and the predetermined grinding rate and the correction parameter, when applied, when the actual grinding rate corresponding to any of the grinding sub-areas exceeds the set threshold of the predetermined grinding rate, the difference between the actual grinding rate corresponding to the grinding sub-area and the predetermined grinding rate is calculated, and based on the difference and the mapping relationship, the correction parameter corresponding to the difference is determined, so that the predetermined grinding rate of the corresponding grinding sub-area can be corrected based on the correction parameter, and the correction of the grinding rate can be quickly completed.

[0076] In an optional implementation, the predetermined grinding rate of the corresponding grinding sub-area is corrected based on the determined correction parameter, specifically including:

[0077] The correction result is calculated by the following formula:

[0078] Z=m+c

[0079] Wherein, Z represents the correction result of the predetermined grinding rate of the grinding sub-area; m represents the predetermined grinding rate of the grinding sub-area; and c represents the correction parameter.

[0080] In this embodiment, the predetermined grinding rate of the grinding sub-area is summed with the correction parameter to obtain a correction result of the predetermined grinding rate of the grinding sub-area, so that the predetermined grinding rate can be updated based on the correction result, and then pre-grinding can be performed again at the updated predetermined grinding rate, the actual grinding rate can be recalculated, and the relationship between the actual grinding rate and the set threshold of the predetermined grinding rate can be re-compared until the actual grinding rate does not exceed the set threshold of the predetermined grinding rate, thereby completing the fine adjustment of the grinding rate.

[0081] In an optional implementation, the height detection of the semiconductor element specifically includes:

[0082] Detecting the height of semiconductor components by a probe device;

[0083] A height detection result of the semiconductor element by the probe device is received.

[0084] See also Figure 3 As shown, in this embodiment, the height of the semiconductor element 1 is detected by a probe device, and the height detection result of the semiconductor element 1 is sent to the computer device 2, so that the computer device 2 analyzes the height detection result. In the specific implementation, a certain time interval can be set to detect the height of the semiconductor element 1, and the specific time interval can be set according to the actual use requirements. In addition, in the specific implementation, the semiconductor element 1 is also fixed by a fixing device 3. For example, the semiconductor element 1 can be fixed by a robot arm, etc. The robot arm can loosen and press the semiconductor element 1, and can also move left and right to control the semiconductor element 1 to move to a specific position. During grinding, the grinding disc 4 can move along Figure 3 The probe device rotates in the direction of the arrow in the figure. Of course, it can also rotate in the opposite direction to that in the figure according to actual use requirements. Exemplarily, the probe device includes a control board 5 and a probe 6. The probe 6 contacts the top surface of the semiconductor element 1. The control board 5 is electrically connected to the probe 6. The control board 5 can determine the height of the semiconductor element 1 by monitoring the position of the probe 6, and send its height detection result to the computer device 2, so that the computer device 2 can analyze the height change of the semiconductor element 1 and calculate the actual grinding rate in real time.

[0085] In the specific implementation, the height of the semiconductor element can also be detected by using a photoelectric sensor distance measurement method. For example, a photoelectric sensor is set above the semiconductor element, and the height of the semiconductor element can be detected in real time by the photoelectric sensor, and its height detection result is sent to a computer device, so that the computer device can analyze the height change of the semiconductor element and calculate the actual grinding rate in real time. Of course, in specific applications, other existing height detection methods can also be used to detect the height of the semiconductor element, which will not be described in detail here.

[0086] By implementing the grinding disc grinding rate correction method provided by the embodiment of the present invention, planning and adjustment can ensure the optimization of the grinding disc, and the overall grinding rate control range can reach 5nm / min, which can increase the yield rate by about 0.71%.

[0087] Compared with the prior art, the beneficial effect of the embodiments of the present invention lies in: the embodiments of the present invention provide a method for correcting the grinding rate of a grinding disk, first, the grinding disk is controlled to pre-grind the semiconductor element according to a predetermined grinding rate, and the height of the semiconductor element is detected during the pre-grinding process, and then the actual grinding rate is determined based on the height detection result of the semiconductor element. When the actual grinding rate exceeds the set threshold of the predetermined grinding rate, the predetermined grinding rate is corrected, the predetermined grinding rate is updated based on the correction result, and the process returns to the step of controlling the grinding disk to pre-grind the semiconductor element according to the predetermined grinding rate until the actual grinding rate does not exceed the set threshold of the predetermined grinding rate. In this way, the predetermined grinding rate of the grinding disk is corrected, so that during the normal use of the grinding disk, the grinding rate of the grinding disk for the semiconductor element can be accurately controlled based on the final predetermined grinding rate, thereby improving the processing accuracy of the semiconductor element.

[0088] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and substitutions can be made without departing from the technical principles of the present invention. These improvements and substitutions should also be regarded as the scope of protection of the present invention.

Claims

1. A method for correcting the grinding rate of a grinding disc, characterized in that: include: Controlling the grinding disc to pre-grind the semiconductor element according to a predetermined grinding rate; wherein, during the pre-grinding process, the height of the semiconductor element is detected; Determining an actual polishing rate based on a height detection result of the semiconductor element; When the actual grinding rate exceeds a set threshold of a predetermined grinding rate, modifying the predetermined grinding rate; The predetermined grinding rate is updated based on the correction result, and the process returns to the step of controlling the grinding disc to pre-grind the semiconductor element according to the predetermined grinding rate until the actual grinding rate does not exceed the set threshold of the predetermined grinding rate.

2. The method for correcting the grinding rate of a grinding disc according to claim 1, characterized in that: The method of controlling the grinding disc to pre-grind the semiconductor element according to a predetermined grinding rate specifically includes: dividing the grinding area of ​​the grinding disc into a plurality of grinding sub-areas; Controlling each grinding sub-area of ​​the grinding disk to pre-grind the semiconductor element according to a predetermined grinding rate corresponding to each grinding sub-area; The determining of the actual grinding rate based on the height detection result of the semiconductor element specifically includes: Based on the height detection result of the semiconductor element in each grinding sub-area, determining the actual grinding rate corresponding to each grinding sub-area; When the actual grinding rate exceeds a set threshold of a predetermined grinding rate, the predetermined grinding rate is corrected, specifically comprising: When the actual grinding rate corresponding to any of the grinding sub-regions exceeds a set threshold of the predetermined grinding rate, the predetermined grinding rate of the corresponding grinding sub-region is corrected.

3. The method for correcting the grinding rate of a grinding disc according to claim 2, characterized in that: The method of updating the predetermined grinding rate based on the correction result and returning to the step of controlling the grinding disc to pre-grind the semiconductor element according to the predetermined grinding rate until the actual grinding rate does not exceed the set threshold of the predetermined grinding rate specifically includes: Based on the correction results of each grinding sub-area, each predetermined grinding rate is updated, and the predetermined grinding rate corresponding to each grinding sub-area is returned to control each grinding sub-area of ​​the grinding disk to perform a pre-grinding step on the semiconductor element respectively until the actual grinding rate of each grinding sub-area does not exceed the set threshold value of the predetermined grinding rate.

4. The method for correcting the grinding rate of a grinding disc according to claim 3, characterized in that: The determining of the actual grinding rate corresponding to each grinding sub-area based on the height detection result of the semiconductor element in each grinding sub-area specifically includes: The actual grinding rate corresponding to each grinding sub-area is calculated by the following formula: LR=(H2-H1) / (t2-t1) Wherein, LR is the actual grinding rate; H2 is the height of the semiconductor element after pre-grinding; H1 is the height of the semiconductor element before pre-grinding; t2 is the time after grinding; and t1 is the time before grinding.

5. The method for correcting the grinding rate of a grinding disc according to claim 2, characterized in that: When the actual grinding rate corresponding to any of the grinding sub-areas exceeds a set threshold value of a predetermined grinding rate, the predetermined grinding rate of the corresponding grinding sub-area is corrected, specifically comprising: When the actual grinding rate corresponding to any of the grinding sub-areas exceeds a set threshold of a predetermined grinding rate, calculating a difference between the actual grinding rate corresponding to the grinding sub-area and the predetermined grinding rate; Determine a correction parameter corresponding to the difference based on the difference and a pre-configured mapping relationship between the difference between the actual grinding rate and the predetermined grinding rate and the correction parameter; Based on the determined correction parameter, the predetermined grinding rate of the corresponding grinding sub-region is corrected.

6. The method for correcting the grinding rate of a grinding disc according to claim 5, characterized in that: The step of correcting the predetermined grinding rate of the corresponding grinding sub-area based on the determined correction parameter specifically includes: The correction result is calculated by the following formula: Z=m+c Wherein, Z represents the correction result of the predetermined grinding rate of the grinding sub-area; m represents the predetermined grinding rate of the grinding sub-area; and c represents the correction parameter.

7. The method for correcting the grinding rate of a grinding disc according to claim 1, characterized in that: The height detection of the semiconductor element specifically includes: Detecting the height of semiconductor components by a probe device; A height detection result of the semiconductor element by the probe device is received.

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