Wafer processing device

Abstract

The invention discloses a wafer processing device, and belongs to the technical field of semiconductors. The wafer processing device comprises a carrying table, a laser lens assembly and an ultrasonic device, wherein the carrying table is used for carrying a crystal ingot; the laser lens assembly is arranged above the carrying table and is used for pulse scanning of the crystal ingot and generation of cracks; the ultrasonic device is arranged above the carrying table, the ultrasonic device can generate transverse vibration waves, and the transverse vibration waves are used for vibrating along the crystal ingot and enabling the cracks to extend in the transverse direction. According to the method, cracks formed by laser pulses on the crystal ingot grow and are connected in the transverse direction, longitudinal growth of the cracks is avoided, the production efficiency of a modified layer is improved, laser pulses do not need to be intensively emitted, and the wafer processing period is shortened.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a wafer processing device. Background Art

[0002] SiC semiconductors have the characteristics of wide bandgap, high breakdown voltage, and high thermal conductivity. They can maintain high efficiency in high-power and high-frequency environments, and their demand in the fields of high-power microwave radio frequency devices and high-voltage power electronic devices has increased significantly. However, SiC also has extremely high hardness, with a Mohs hardness of more than 9, which is second only to the hardness of diamond, and poses a higher challenge to processing.

[0003] SiC is formed into a crystal ingot with a thickness of 20mm after processes such as crystal growth, rounding, and truncation (the technology is developing towards thicker thicknesses, such as 40mm). The crystal ingot needs to be separated into 350μm standard wafers for subsequent thin film growth and other processes.

[0004] The existing mature technology uses wire cutting solutions such as diamond wire or mortar wire for cutting. Since wire cutting technology requires wire processing, SiC materials with a diameter close to the cutting wire will be ground into debris with a width of about 100μm. At the same time, due to the cutting process of the wire saw, the SiC material on both sides of the cutting wire will form roughness and structural damage of about 80μm each, which must be removed by grinding and polishing, resulting in a total material loss of more than 43%. And because SiC is extremely hard, the processing time of a wafer is more than 1 hour.

[0005] The current laser cutting solution can effectively reduce the loss layer, but in order to connect the cracks formed by the laser pulses, the pulses need to be emitted very densely, with each pulse interval being only about 0.5-1μm. Usually, it takes more than 30 minutes to complete the modification process for a 6-inch wafer. Adding the subsequent peeling and grinding time, the total time is more than 40 minutes, which is not significantly better than wire cutting.

[0006] Therefore, it is urgent to provide a wafer processing device to solve the above problems. Summary of the invention

[0007] The object of the present invention is to provide a wafer processing device, which can connect the cracks formed by laser pulses on the ingot along the lateral growth to avoid the cracks growing vertically, thereby improving the production efficiency of the modified layer and eliminating the need for intensive emission of laser pulses, thus shortening the wafer processing cycle.

[0008] In order to achieve the above objectives, the following technical solutions are provided:

[0009] Wafer processing apparatus, comprising:

[0010] A carrier, used for holding the ingot;

[0011] A laser lens assembly is disposed above the carrier and is used for pulse scanning the crystal ingot and generating cracks;

[0012] An ultrasonic device is disposed above the carrier, and the ultrasonic device can generate a transverse vibration wave, and the transverse vibration wave is used to vibrate along the ingot and make the crack expand in the transverse direction.

[0013] As an optional solution of the wafer processing device, the ultrasonic device includes an ultrasonic generator and a vibration transmission medium arranged in sequence along the height direction, and the vibration transmission medium is used to contact the surface of the ingot.

[0014] As an optional solution of the wafer processing apparatus, the vibration transmission medium is a semi-liquid substance.

[0015] As an alternative to the wafer processing apparatus, the semi-liquid substance comprises a gel.

[0016] As an optional solution of the wafer processing device, the semi-liquid substance includes a water-containing flexible physical absorbent, and the water-containing flexible physical absorbent includes at least one of water-containing cotton, paper, sponge and hair bundle.

[0017] As an optional solution for the wafer processing device, the ultrasonic device further includes a water homogenizer, in which a plurality of water leakage holes are evenly arranged, and the water leakage holes are used to drip liquid into the vibration transmission medium.

[0018] As an optional solution for the wafer processing device, the ultrasonic generator includes a shell having a shock-absorbing ring and a piezoelectric ceramic, wherein one end of the shock-absorbing ring away from the shell is connected to the water homogenizer, the fixed section of the piezoelectric ceramic is located in the shell and connected to the water homogenizer, and the movable section of the piezoelectric ceramic passes through the accommodating cavity of the water homogenizer and is connected to the vibration transmission medium.

[0019] As an optional solution for the wafer processing device, the wafer processing device also includes a lifting assembly, and the ultrasonic device also includes a transition connector, one end of the transition connector is connected to the ultrasonic generator, and the other end of the transition connector is connected to the movable end of the lifting assembly, and the lifting assembly is used to adjust the height of the ultrasonic device.

[0020] As an optional solution of the wafer processing device, the wafer processing device also includes a base with a gantry, and several groups of the laser lens assemblies and several groups of the ultrasonic devices are arranged on the gantry.

[0021] As an optional solution of the wafer processing device, a first direction moving module is arranged on the base, a second direction moving module is arranged on the first direction moving module, and the carrier is rotatably arranged on the second direction moving module; and / or

[0022] The carrier is provided with a plurality of vacuum adsorption holes.

[0023] Compared with the prior art, the present invention has the following beneficial effects:

[0024] The wafer processing device provided by the present invention places the ingot to be laser cut on a carrier, and the laser lens assembly located above the ingot generates pulses to form cracks at a set thickness inside the ingot. One pulse forms a crack, and multiple cracks form a modified layer. For the position where the ingot has been laser scanned, an ultrasonic device is used to assist crack expansion, so that each crack after modification grows and connects laterally to avoid crack longitudinal growth. By adding an ultrasonic device, the pulse interval generated by the laser lens assembly can be increased, which helps to speed up the modification processing speed of the entire wafer. By using an ultrasonic device to assist crack expansion, the stripping unit does not need a large stripping force, reduces the structural difficulty of the stripping unit, and makes the stripping unit smaller. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments of the present invention. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the contents of the embodiments of the present invention and these drawings without paying any creative work.

[0026] Figure 1 It is a schematic diagram of the assembly of a wafer processing device according to an embodiment of the present invention;

[0027] Figure 2 An axonometric diagram of a laser lens assembly and an ultrasonic device processing a crystal ingot in an embodiment of the present invention;

[0028] Figure 3 A side view of a laser lens assembly and an ultrasonic device processing a crystal ingot in an embodiment of the present invention;

[0029] Figure 4 is a cross-sectional view of an ultrasonic device in an embodiment of the present invention;

[0030] Figure 5 This is a schematic diagram of the structure of a water homogenizer in an embodiment of the present invention;

[0031] Figure 6 1 is an exploded view of the crystal ingot and the carrier in an embodiment of the present invention.

[0032] Reference numerals:

[0033] 100, ingot; 101, modified layer;

[0034] 1. Carrier; 2. Laser lens assembly; 3. Ultrasonic device; 4. Base; 41. Gantry; 42. First direction moving module; 43. Second direction moving module; 5. Ingot positioning device; 6. Ingot height measuring device;

[0035] 11. Vacuum adsorption hole;

[0036] 31. Ultrasonic generator; 311. Housing; 312. Piezoelectric ceramics; 313. Shock-absorbing annular member; 32. Vibration transmission medium; 33. Water homogenizer; 331. Annular cavity; 332. Water leakage hole; 333. Water inlet; 334. Accommodating cavity; 34. Water connecting pipe; 35. Lifting assembly; 36. Adapter connector; 37. Fastener. DETAILED DESCRIPTION

[0037] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings here can be arranged and designed in various different configurations.

[0038] In the description of the present invention, it should be noted that the terms "upper", "lower", "left", "right", "vertical", "horizontal", "inside", "outside", etc. indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, or are the positions or positional relationships in which the inventive product is usually placed when in use. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", "third", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance. In the description of the present invention, unless otherwise specified, "multiple" means two or more.

[0039] In the description of the present invention, it is also necessary to explain that, unless otherwise clearly specified and limited, the terms "disposed" and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0040] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0041] In the existing technical solution CN115302108A-laser processing device for laser splitting wafers, the SiC ingot structure is a hexagonal single crystal SiC, wherein the C surface forms an angle α with the upper surface of the ingot. Different crystal forms have different angles, which can be 0°, 3°, 4° or 6°, etc. The C axis is perpendicular to the C surface and forms an angle α with the central axis of the ingot along the A direction. When the laser emits a pulse to the same depth as the thickness of the SiC wafer, a modified layer is formed along the C surface, and the modified layer expands to form cracks. Pulses are emitted along the laser scanning path, the cracks are connected, and finally a peeling surface is formed. This technical solution has the problem of insufficient crack development and a tendency for longitudinal cracks, which increases the difficulty of peeling, and the longitudinal cracks increase the loss layer.

[0042] In order to make the cracks formed by the laser pulse on the ingot grow and connect along the lateral direction, avoid the cracks growing vertically, improve the production efficiency of the modified layer, and shorten the wafer processing cycle without intensively emitting laser pulses, this embodiment provides a wafer processing device, which is combined with the following Figures 1 to 6 The specific contents of this embodiment are described in detail.

[0043] like Figures 1 to 3 As shown, the wafer processing device in this embodiment includes a carrier 1, a laser lens assembly 2 and an ultrasonic device 3. The carrier 1 is used to hold the crystal ingot 100. The laser lens assembly 2 is arranged above the carrier 1, and is used to pulse scan the crystal ingot 100 and generate cracks. The ultrasonic device 3 is arranged above the carrier 1, and the ultrasonic device 3 can generate transverse vibration waves. The transverse vibration waves generated by the ultrasonic device 3 are used to vibrate along the crystal ingot 100 and cause the cracks to expand in the transverse direction.

[0044] In short, the wafer processing device provided in this embodiment places the ingot 100 to be laser cut on the carrier 1, and the laser lens assembly 2 located above the ingot 100 generates pulses to form cracks at a set thickness inside the ingot 100. One pulse forms a crack, and multiple cracks form a modified layer 101. For the position of the ingot 100 that has been laser scanned, an ultrasonic device 3 is used to assist crack expansion, so that each crack after modification grows and connects laterally to avoid crack longitudinal growth. By adding an ultrasonic device 3, the pulse interval emitted by the laser lens assembly 2 can be increased, which helps to speed up the modification processing speed of the entire wafer. By assisting crack expansion with the ultrasonic device 3, the stripping unit does not need a large stripping force, reduces the structural difficulty of the stripping unit, and makes the stripping unit smaller.

[0045] While the laser lens assembly 2 in this embodiment emits pulses, ultrasonic vibration is used to assist in the lateral growth and connection of the modified cracks, so that the pulse interval can be increased to 2.5 μm, the modification process can be completed within 10 minutes, and the total processing time of a single piece is controlled within 15 minutes.

[0046] Furthermore, if Figures 2 to 5 As shown, the ultrasonic device 3 includes an ultrasonic generator 31 and a vibration transmission medium 32 arranged in sequence along the height direction, and the vibration transmission medium 32 is used to contact the surface of the ingot 100. When the ingot 100 on the carrier 1 moves to the bottom of the ultrasonic device 3, the ultrasonic generator 31 transmits transverse ultrasonic waves to the ingot 100 through the vibration transmission medium 32 to assist the crack to grow in the transverse direction. Among them, the ultrasonic transducer is an energy conversion device, and its function is to convert electrical energy into mechanical vibration energy of ultrasonic waves. The ultrasonic transducer is an important component of the ultrasonic generator 31, and is mainly used to generate and transmit ultrasonic waves. The ultrasonic transducer is usually composed of a piezoelectric ceramic 312, a housing 311, and a wire. Among them, the piezoelectric ceramic 312 is the core part of the transducer, which uses the piezoelectric effect to convert electrical energy into mechanical vibration energy. When an alternating voltage is applied to the piezoelectric ceramic 312 through a wire, it will deform and generate mechanical vibrations, which in turn generate ultrasonic waves and propagate to the surrounding medium.

[0047] For example, the vibration transmission medium 32 in this embodiment can be fixed to the lower end of the piezoelectric ceramic 312 by using a fastener 37 such as a bolt or a screw.

[0048] For example, the vibration transmission medium 32 in this embodiment is a semi-liquid substance. The semi-liquid substance has a large ultrasonic energy load, good directivity, and a high utilization rate of unit ultrasonic energy. The semi-liquid substance has the following technical effects: (1) The ultrasonic energy transmission efficiency is high. The transmission of ultrasound by semi-liquid substances and the transmission of ultrasound by water flow are analogous to copper wire and iron wire. Copper wire has a lower resistance than iron wire, so copper wire has better conductivity than iron wire. Transmitting ultrasound by semi-liquid substances can reduce or avoid the vibration sputtering effect of ultrasound on water, so that a large amount of ultrasonic energy is transmitted to the wafer with low attenuation. In the traditional method of transmitting ultrasound by water flow, the ultrasonic energy has a peak value, that is, the ultrasonic energy cannot be too high (higher than the adsorption force between water molecules). If it is too high, the water flow will be sputtered into water splashes, and a good transmission effect cannot be achieved; similarly, the ultrasonic frequency cannot be too low. If the ultrasonic energy is too low, it will not have a good crack diffusion effect. Transmitting ultrasound by semi-liquid substances can achieve higher energy ultrasonic transmission. The reason is that the adsorption force of semi-liquid substances on water is greater than the adsorption force between water molecules, and the water on the semi-liquid substances is not easy to disperse and splash. (2) Good directionality. In the traditional method of using water flow to transmit ultrasound, the water flow has no directionality, which makes the direction of ultrasound transmission unstable and difficult to operate. However, semi-liquid substances have certain solid properties and can transmit ultrasound in a good direction, which is convenient for accurate directional crack extension operations. (3) High utilization rate of unit ultrasonic energy. In the traditional method of using water flow to transmit ultrasound, there are two parts of energy consumption: 1) water flow dispersion and sputtering, which consume ultrasonic energy, and 2) a large amount of water flow gathers on the wafer and absorbs ultrasonic energy. However, when semi-liquid substances transmit ultrasound, they will not produce a large amount of splashes or water gathering. In addition, with the support of the directional transmission performance of semi-liquid substances, most of the ultrasonic energy is transmitted in a directionally concentrated manner at a point on the wafer surface, which can greatly improve the utilization rate of ultrasonic energy.

[0049] Exemplarily, the semi-liquid substance includes gel, and the gel includes hydrogel. The hydrogel is fixed on the lower surface of the water homogenizer 33. The hydrogel is a material with strong water absorption, but it does not hinder the ultrasonic transmission of water (it can also be other water-absorbing materials or other liquids). The hydrogel contacts the upper surface of the ingot 100, and the ultrasonic generator 31 (which can be a piezoelectric ceramic 312 or other vibration generating device) is started to transmit the ultrasonic wave to the ingot 100 through the hydrogel. The cracks inside the ingot 100 grow and connect to each other under the influence of the ultrasonic wave.

[0050] Exemplarily, the semi-liquid substance includes a water-containing flexible physical absorbent, and the water-containing flexible physical absorbent includes at least one of water-containing cotton, paper, sponge and hair bundle (similar to a brush). The water-containing flexible physical absorbent is a physical cavity water absorption structure (similar to a molecular sieve), the adsorption capacity depends on the average radius of the cavity, and the adsorption capacity is positively correlated with the specific surface area; after absorbing water, it cannot effectively lock water and has limited water absorption.

[0051] Furthermore, the ultrasonic device 3 also includes a water homogenizer 33, in which a plurality of water leakage holes 332 are evenly arranged, and the water leakage holes 332 are used to drip liquid into the vibration transmission medium 32. By adding the water homogenizer 33, the vibration transmission medium 32 is kept moist. It can be understood that when the hydrogel moves on the wafer, water will be lost, and a small amount of replenishment is sufficient.

[0052] Furthermore, a receiving chamber 334 and an annular chamber 331 are also provided in the water homogenizer 33. The ultrasonic generator 31 includes a housing 311 having a shock-absorbing annular member 313 and a piezoelectric ceramic 312. The end of the shock-absorbing annular member 313 away from the housing 311 is connected to the water homogenizer 33. The fixed section of the piezoelectric ceramic 312 is located in the housing 311 and connected to the water homogenizer 33. The movable section of the piezoelectric ceramic 312 passes through the receiving chamber 334 of the water homogenizer 33 and is connected to the vibration transmission medium 32. It can be understood that the receiving chamber 334 is used to pass through the lower end of the piezoelectric ceramic 312. The water inlet 333 of the water homogenizer 33 and a plurality of water leakage holes 332 arranged at intervals in the circumferential direction are all connected to the annular chamber 331. The water inlet 333 on the side wall of the water homogenizer 33 is connected to a water receiving pipe 34, and liquid can be added to the water homogenizer 33 in time through the water receiving pipe 34.

[0053] Furthermore, the wafer processing device further includes a lifting assembly 35, and the ultrasonic device 3 further includes a transfer connector 36, one end of which is connected to the ultrasonic generator 31, and the other end of which is connected to the movable end of the lifting assembly 35, and the lifting assembly 35 is used to adjust the height of the ultrasonic device 3. After the ingot 100 on the carrier 1 completes the laser scanning, the ultrasonic device 3 is driven by the lifting assembly 35 to move freely in the vertical direction and stop. Since the shock-absorbing annular member 313 is arranged between the housing 311 and the water homogenizer 33, the vibration generated by the ultrasonic generator 31 can be transmitted downward only through the vibration transmission medium 32, thereby preventing the vibration generated by the ultrasonic generator 31 from being transmitted upward to the lifting assembly 35, resulting in a reduction in the movement accuracy of the lifting assembly 35.

[0054] Exemplarily, the lifting assembly 35 includes a screw slide module or a telescopic cylinder. The ultrasonic device 3 is mounted on a slide of the screw slide module or a piston rod of the telescopic cylinder. When the ingot 100 is located directly below the ultrasonic device 3, the height of the ultrasonic device 3 is adjusted by the screw slide module or the telescopic cylinder.

[0055] Furthermore, if Figure 1As shown, the wafer processing device also includes a base 4 with a gantry 41, and a plurality of groups of laser lens assemblies 2 and a plurality of groups of ultrasonic devices 3 are arranged on the gantry 41. Increasing the number of laser lens assemblies 2 and ultrasonic devices 3 on the gantry 41 according to actual use requirements helps to further improve the processing efficiency of the wafer. The distance between the laser lens assembly 2 and the ultrasonic device 3 is constant. The ultrasonic device 3 and the upper end of the laser lens assembly 2 can be integrated or separated.

[0056] Furthermore, a first direction moving module 42 is provided on the base 4, a second direction moving module 43 is provided on the first direction moving module 42, and the carrier 1 is rotatably provided on the second direction moving module 43. By adding the first direction moving module 42 and the second direction moving module 43, it is convenient to move the carrier 1 to the target position, and the first direction and the second direction are perpendicular to each other. In this embodiment, the laser lens assembly 2 can scan the crystal ingot 100 along a first direction or a second direction in a straight line path through the first direction moving module 42 or the second direction moving module 43, and can also scan the crystal ingot 100 along an arc path by rotating the carrier 1.

[0057] Alternatively, if Figure 6 As shown, a plurality of vacuum adsorption holes 11 are provided on the carrier 1. The crystal ingot 100 is firmly adsorbed and fixed on the carrier 1 through the vacuum adsorption holes 11, and when the ultrasonic device 3 transmits vibration to the crystal ingot 100 on the carrier 1, the crystal ingot 100 is prevented from being displaced.

[0058] The working principle of the wafer processing device in this embodiment is as follows: the ingot 100 is placed on the carrier 1, and the carrier 1 is moved to the processing position by the first direction moving module 42 and the second direction moving module 43. The ingot is positioned by the ingot positioning device 5, and the ingot height measuring device 6 measures the height of the ingot 100; then the ingot 100 starts pulse scanning along the set laser scanning path; for the position that has been laser scanned, the ultrasonic device 3 is used to act so that the modified crack grows and connects laterally; the laser modification and ultrasonic-assisted crack expansion are continued until the entire surface is processed; then it enters the stripping unit to separate the ingot 100 and the wafer by mechanical pulling force; then it enters the grinding unit to grind the stripping surface to achieve the roughness required for laser incidence.

[0059] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A wafer processing device, characterized in that: include: A carrier (1) for holding a crystal ingot (100); A laser lens assembly (2) is arranged above the carrier (1) and is used for pulse scanning the crystal ingot (100) and generating cracks; An ultrasonic device (3) is arranged above the carrier (1), and the ultrasonic device (3) is capable of generating transverse vibration waves, wherein the transverse vibration waves are used to vibrate along the crystal ingot (100) and cause the crack to expand in the transverse direction.

2. The wafer processing device according to claim 1, characterized in that The ultrasonic device (3) comprises an ultrasonic generator (31) and a vibration transmission medium (32) which are sequentially arranged in a height direction, and the vibration transmission medium (32) is used to contact the surface of the crystal ingot (100).

3. The wafer processing device according to claim 2, characterized in that: The vibration transmission medium (32) is a semi-liquid substance.

4. The wafer processing device according to claim 3, characterized in that: The semi-liquid substance comprises a gel.

5. The wafer processing device according to claim 3, characterized in that: The semi-liquid material comprises a water-containing flexible physical absorbent, and the water-containing flexible physical absorbent comprises at least one of water-containing cotton, paper, sponge and hair bundle.

6. The wafer processing device according to any one of claims 3 to 5, characterized in that: The ultrasonic device (3) further comprises a water homogenizer (33), wherein a plurality of water leakage holes (332) are evenly arranged in the water homogenizer (33), and the water leakage holes (332) are used to drip liquid into the vibration transmission medium (32).

7. The wafer processing device according to claim 6, characterized in that: The ultrasonic generator (31) comprises a housing (311) having a shock-absorbing annular component (313) and a piezoelectric ceramic (312); one end of the shock-absorbing annular component (313) away from the housing (311) is connected to the water homogenizer (33); a fixed section of the piezoelectric ceramic (312) is located in the housing (311) and is connected to the water homogenizer (33); and a movable section of the piezoelectric ceramic (312) passes through a containing cavity (334) of the water homogenizer (33) and is connected to the vibration transmission medium (32).

8. The wafer processing device according to claim 6, characterized in that: The wafer processing device further comprises a lifting assembly (35), and the ultrasonic device (3) further comprises a transition connection (36), one end of the transition connection (36) is connected to the ultrasonic generator (31), and the other end of the transition connection (36) is connected to the movable end of the lifting assembly (35), and the lifting assembly (35) is used to adjust the height of the ultrasonic device (3).

9. The wafer processing device according to claim 1, characterized in that: The wafer processing device also includes a base (4) having a gantry (41), and a plurality of groups of the laser lens assemblies (2) and a plurality of groups of the ultrasonic devices (3) are arranged on the gantry (41).

10. The wafer processing device according to claim 9, characterized in that The base (4) is provided with a first direction moving module (42), the first direction moving module (42) is provided with a second direction moving module (43), and the carrier (1) is rotatably provided on the second direction moving module (43); and / or The carrier (1) is provided with a plurality of vacuum adsorption holes (11).

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