Method for calibrating film thickness of oxide film in atmospheric environment through film stacking

Abstract

The invention discloses a method for realizing film thickness calibration of an oxide film in an atmospheric environment through film stacking. The method comprises the following steps: S1, depositing a first IZO film layer on a bare silicon wafer substrate by using an open mask through a PVD integrated sputter coating machine I; s2, depositing a first fusion type organic material layer on the first IZO thin film layer by using first evaporation equipment and an open mask; the first IZO thin film layer, the first molten organic material layer, the metal Yb layer, the second molten organic material layer and the second IZO thin film layer are sequentially formed on the bare silicon wafer substrate, so that an easily oxidized material is effectively isolated from oxygen in the air, and the oxygen and moisture in the air are effectively shielded; even in a conventional atmospheric environment, the film material easy to oxidize does not undergo an oxidation reaction, so that the production and calibration process does not depend on an inert atmosphere any more, and the dependence on a special atmosphere environment is reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of oxide film calibration, and in particular to a method for realizing film thickness calibration of an oxide film in an atmospheric environment by thin film stacking. Background Art

[0002] In OLED Tandem devices, the CGL (charge generation layer) usually uses materials such as Yb (yttrium) and Li (lithium) as dopants. The thickness of these doped materials is crucial to the optical performance and overall efficiency of the device. Accurately calibrating the thickness of these materials has become the key to optimizing device performance. However, when using an ellipsometer or a step meter to measure thickness in an atmospheric environment, distortion is prone to occur. The main reason is the oxidation of the material. Materials such as Yb and Li are prone to oxidation in the air, and the optical properties of the oxides are significantly different from those of the raw materials, which can cause the measurement results to deviate from the actual thickness of the doped material. In addition, the oxidation process is dynamic. Over time, the thickness and properties of the oxide layer will change, making the measurement results unable to accurately reflect the actual state of the material. Humidity and temperature changes in the environment may also affect the thickness and optical properties of the material, further reducing the accuracy of the measurement. The step meter is based on the reflection and interference effects of light. However, these effects are very sensitive to the optical properties of the material. Oxidation and other environmental factors can cause changes in the optical properties, which in turn lead to distortion in thickness measurement. Therefore, at this stage, the thickness of the oxide film in the OLED Tandem device structure is mainly measured under specific environments such as nitrogen. However, film thickness measurement in a nitrogen environment usually requires special experimental equipment and facilities. These equipment need to provide a closed and constant nitrogen atmosphere, which increases the complexity of the experiment. In actual production and application, OLED devices are usually exposed to the air, especially before device packaging. If the thickness of the material measured in a nitrogen environment is different from the thickness in the actual use environment, the measurement result cannot truly reflect the performance of the device during use. Summary of the invention

[0003] The purpose of the present invention is to provide a method for calibrating the film thickness of an oxide film in an atmospheric environment by thin film stacking, and to sequentially form a first IZO thin film layer, a first molten organic material layer, a metal Yb layer, a second molten organic material layer and a second IZO thin film layer on a bare silicon wafer substrate of an OLED Tandem device structure using a PVD integrated sputtering coating machine, an evaporation device, a sputtering coating device and a conveying device, thereby solving the problem of calibrating and detecting easily oxidizable thin film materials without relying on a specific atmosphere such as nitrogen.

[0004] To achieve the above object, the present invention provides the following technical solution: a method for calibrating the film thickness of an oxide film in an atmospheric environment by thin film stacking, the method comprising the following steps:

[0005] S1, depositing the first IZO thin film layer on the bare silicon wafer substrate by using a PVD integrated sputtering coating machine and an open mask. The operator needs to ensure that the bare silicon wafer substrate is fixed firmly and adjust the gas flow, power and deposition rate in a well-controlled argon environment to avoid uneven deposition. During the deposition process, the staff must closely monitor the film thickness. After reaching the target design thickness, stop sputtering and check the quality of the film layer. The bare silicon wafer substrate with the IZO thin film layer is transported to the first evaporation equipment through a conveying device;

[0006] S2, using a first evaporation device and an open mask to deposit a first molten organic material layer on the first IZO thin film layer, the heating source power and the evaporation rate need to be adjusted to ensure that the organic film layer is uniform and defect-free, until the molten organic material layer reaches the target design thickness, and the bare silicon wafer substrate with the IZO layer and the molten organic material layer is continuously conveyed to the sputtering coating device through the conveying device;

[0007] S3, using sputtering equipment and CMM mask to deposit a rare earth metal Yb layer on the first molten organic material layer of the bare silicon wafer substrate. Since Yb ​​metal is easily oxidized, the operator needs to pay attention to the oxygen content in the atmosphere and adjust the sputtering parameters to control the deposition rate and film thickness. The thickness of the deposited metal Yb layer is greater than that of the molten organic material layer, so that the target film layer to be measured can form a significant height difference with other protective film layers during step profile measurement to reduce interference;

[0008] S4, using an open mask and a second evaporation device to deposit a second molten organic material layer on the metal Yb layer, and the bare silicon wafer substrate with four thin film layers is continuously conveyed to the second PVD integrated sputtering coating machine through a conveying device;

[0009] S5, using the PVD integrated sputtering coating machine 2 and the open mask to deposit the second IZO thin film layer again. The deposition of this layer is the same as the first step, and the thickness of the two layers is the same, ensuring that the IZO film layer uniformly covers the previous molten organic material layer;

[0010] S6, the bare silicon wafer substrate with a laminated structure is delivered to the main engine room by the conveying device and taken over by the double-sided belt conveyor. The three-axis moving module and the pneumatic picking module place the formed bare silicon wafer substrate on the detection station of the step meter. The step meter performs precise film thickness measurement on each layer of the film to confirm whether the set target thickness is reached.

[0011] Preferably, the target thickness of the first IZO thin film layer is 70nm, the target thickness of the first molten organic material layer is 30nm, the target thickness of the rare earth metal Yb layer is 50nm, the target thickness of the second molten organic material layer is 30nm, and the target thickness of the second IZO thin film layer is 70nm.

[0012] Preferably, the target thickness error range of the first IZO thin film layer, the first molten organic material layer, the rare earth metal Yb layer, the second molten organic material layer and the second IZO thin film layer is ±3%.

[0013] Preferably, the PVD integrated sputtering coating machine 1, the first evaporation equipment, the sputtering coating equipment, the second evaporation equipment, and the PVD integrated sputtering coating machine 2 are arranged in sequence from right to left in the X-axis direction, and a horizontal frame is commonly provided at the bottom ends of the PVD integrated sputtering coating machine 1, the first evaporation equipment, the sputtering coating equipment, the second evaporation equipment, and the PVD integrated sputtering coating machine 2, and the conveying device is arranged inside the horizontal frame.

[0014] Preferably, a main engine room is fixed on the outer wall of one side of the horizontal frame away from the PVD integrated sputtering coating machine, and a partition is fixed at one end of the interior of the main engine room, and the double-sided belt conveyor, the three-axis moving module and the step meter are arranged on the top of the partition, the double-sided belt conveyor is used to receive the silicon wafer substrate from the conveying device, and the Z-axis moving end of the three-axis moving module is installed with a pneumatic picking module, and the three-axis moving module and the pneumatic picking module are used to move the silicon wafer substrate on the double-sided belt conveyor to the detection station of the step meter.

[0015] Preferably, the double-sided belt conveyor is composed of two single-belt conveyors, the feeding direction of the two single-belt conveyors is parallel to the feeding direction of the conveying device, and the head and tail ends of the single-belt conveyors and the conveying device are butt-jointed, and push modules are arranged on the outer walls on opposite sides of the frames of the two single-belt conveyors.

[0016] Preferably, the pushing module includes a Z-axis double-rod cylinder installed on the outer wall of one side of the single-belt conveyor frame and an inverted L-supporting arm installed on the top end of the piston rod of the Z-axis double-rod cylinder.

[0017] Preferably, the three-axis mobile module includes two parallel gantries fixed on the top of a horizontal frame, slides slidably installed on the top of the two gantries, a Y-axis screw linear module installed on the top of the slide, and a Z-axis screw linear lifting module installed on the moving end of the Y-axis screw linear module. The moving end of the slide is installed with an L-shaped bracket, and the pneumatic pickup module is installed at the bottom end of the L-shaped bracket. An X-axis screw linear module is installed on the outer wall of one side of one of the gantries for driving the slide, the Y-axis screw linear module, the Z-axis screw linear lifting module, the sputtering coating equipment, and the pneumatic pickup module to slide.

[0018] Preferably, the extension direction of the two gantries is perpendicular to the extension direction of the double-sided belt conveyor.

[0019] Preferably, the pneumatic picking module includes a hanger fixed at the bottom end of the L-shaped bracket and a plurality of pneumatic suction cups installed at the edge of the bottom end of the hanger.

[0020] Compared with the prior art, the beneficial effects of the present invention are as follows: the method for realizing film thickness calibration of an oxide film under an atmospheric environment by thin film stacking is provided with a structure that cooperates with each other, such as a PVD integrated sputtering coating machine, an evaporation device, a sputtering coating device, and a conveying device, and sequentially forms a first IZO thin film layer, a first molten organic material layer, a metal Yb layer, a second molten organic material layer, and a second IZO thin film layer on a bare silicon wafer substrate of an organic light-emitting diode series device structure through a series of precise process steps, so as to effectively isolate the easily oxidizable material from oxygen in the air, thereby effectively shielding oxygen and moisture in the air. Even in a conventional atmospheric environment, the easily oxidizable thin film material will not undergo an oxidation reaction. This design makes the production and calibration process no longer dependent on an inert atmosphere, and reduces the dependence on a special atmosphere environment.

[0021] When the IZO film is deposited by Sputter (sputtering deposition) equipment, this material layer can provide necessary protection for the subsequent organic material and metal layer, so that all deposition steps can be completed even under normal atmospheric conditions without the need for high-cost vacuum environments. As a transparent conductive material, the IZO (indium zinc oxide) film has excellent optical and electrical properties. It not only provides conductivity and light transmittance, but also acts as a gas barrier to prevent moisture and oxygen from penetrating into the device, significantly improving the stability of the device. The molten organic material layer has good film formation and interface quality, can reduce interface defects, and optimize photoelectric conversion efficiency. The metal Yb (ytterbium) layer plays the role of electron transmission in the structure, which can improve the current efficiency of the device.

[0022] In this stacked structure, a combination of open mask and CMM mask is used to deposit different thin film layers. By using the CMM mask, a significant height difference can be formed during step profiler measurement, thereby reducing interference and improving the accuracy of film thickness measurement. This design can perform film thickness calibration after each layer is deposited to ensure that each layer of material can reach the set target thickness, thereby ensuring the consistency of device performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a schematic diagram of the main structure of the present invention;

[0024] Figure 2 The three-dimensional structure of the present invention is shown in FIG. Figure 1 ;

[0025] Figure 3 The three-dimensional structure of the present invention is shown in FIG. Figure 2 ;

[0026] Figure 4 The three-dimensional structure of the present invention is shown in FIG. Figure 3 ;

[0027] Figure 5 The three-dimensional structure of the second embodiment of the present invention is shown in FIG. Figure 1 ;

[0028] Figure 6 The three-dimensional structure of the second embodiment of the present invention is shown in FIG. Figure 2 ;

[0029] Figure 7 This is a schematic diagram of the three-axis moving module according to the third embodiment of the present invention;

[0030] Figure 8 This is a side structural diagram of a three-axis mobile module according to a third embodiment of the present invention;

[0031] Fig. 9 This is a schematic diagram of the three-dimensional structure of the pneumatic pickup module according to the third embodiment of the present invention.

[0032] In the figure: 1. horizontal frame; 2. main machine room; 3. partition; 4. PVD integrated sputtering coating machine one; 5. first evaporation equipment; 6. sputtering coating equipment; 7. second evaporation equipment; 8. PVD integrated sputtering coating machine two; 9. conveying device; 10. step meter; 11. double-sided belt conveyor; 12. push module; 1201. Z-axis double-rod cylinder; 1202. inverted L support arm; 13. three-axis moving module; 1301. slide; 1302. X-axis screw linear module; 1303. gantry; 1304. Y-axis screw linear module; 1305. Z-axis screw linear lifting module; 1306. L-shaped bracket; 14. pneumatic pickup module; 1401. hanger; 1402. pneumatic suction cup. DETAILED DESCRIPTION

[0033] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the accompanying drawings in the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0034] Embodiment 1, by Figures 1 to 4 A method for calibrating the film thickness of an oxide film in an atmospheric environment by thin film stacking is provided, the method comprising the following steps:

[0035] S1, depositing the first IZO thin film layer on the bare silicon wafer substrate by using a PVD integrated sputtering coating machine 4 and an open mask. The operator needs to ensure that the bare silicon wafer substrate is fixed firmly and adjust the gas flow, power and deposition rate in a well-controlled argon environment to avoid uneven deposition. During the deposition process, the operator must closely monitor the film thickness. After reaching the target design thickness, stop sputtering and check the quality of the film. The bare silicon wafer substrate with the IZO thin film layer is conveyed to the first evaporation device 5 by the conveying device 9;

[0036] S2, using the first evaporation device 5 and the open mask to deposit the first molten organic material layer on the first IZO thin film layer, the heating source power and the evaporation rate need to be adjusted to ensure that the organic film layer is uniform and defect-free, until the molten organic material layer reaches the target design thickness, and the bare silicon wafer substrate with the IZO layer and the molten organic material layer is continuously conveyed to the sputtering coating device 6 through the conveying device 9;

[0037] S3, using the sputtering coating device 6 and the CMM mask to deposit a rare earth metal Yb layer on the first molten organic material layer of the bare silicon wafer substrate. Since the Yb metal is easily oxidized, the operator needs to pay attention to the oxygen content in the atmosphere and adjust the sputtering parameters to control the deposition rate and the film thickness. The thickness of the deposited metal Yb layer is greater than the thickness of the molten organic material layer, so that when the step profiler 10 is measuring, the target film layer to be measured can form a significant height difference with other protective film layers to reduce interference;

[0038] S4, using an open mask and a second evaporation device 7 to deposit a second molten organic material layer on the metal Yb layer, and the bare silicon wafer substrate with four thin film layers is continuously conveyed to the second PVD integrated sputtering coating machine 8 through a conveying device 9;

[0039] S5, using the PVD integrated sputtering coating machine 28 and an open mask to deposit the second IZO thin film layer again. The deposition of this layer is the same as the first step, and the thickness of the two layers is the same, ensuring that the IZO film layer uniformly covers the previous molten organic material layer;

[0040] S6, the bare silicon wafer substrate with a laminated structure is delivered to the main machine room 2 by the conveying device 9 and received by the double-sided belt conveyor 11. The three-axis moving module 13 and the pneumatic picking module 14 place the formed bare silicon wafer substrate on the detection station of the step meter 10. The step meter 10 performs accurate film thickness measurement on each layer of the film to confirm whether the set target thickness is reached;

[0041] The target thickness of the first IZO thin film layer is 70nm, the target thickness of the first molten organic material layer is 30nm, the target thickness of the rare earth metal Yb layer is 50nm, the target thickness of the second molten organic material layer is 30nm, the target thickness of the second IZO thin film layer is 70nm, and the target thickness error range of the first IZO thin film layer, the first molten organic material layer, the rare earth metal Yb layer, the second molten organic material layer and the second IZO thin film layer is ±3%;

[0042] By forming an IZO thin film layer and a molten organic material layer on both sides, a double barrier can be provided for easily oxidized materials, effectively preventing moisture and oxygen in the air from penetrating into the organic layer and the metal layer, thereby improving the long-term stability and reliability of the device. The metal Yb layer can serve as an electron transport layer, improving the current efficiency of the device and promoting the transmission of electrons.

[0043] In the first step, the operator first checks the status of the sputtering equipment to ensure that the atmosphere in the equipment is pure and uncontaminated. The silicon wafer substrate is placed on the substrate tray of the equipment and ensures that it is aligned with the IZO target. The operator should pay special attention to whether the substrate is stable to avoid deviation during the deposition process. The operator sets the atmosphere to argon Ar and adjusts the sputtering gas flow rate; in order to ensure the uniformity of the film layer, a lower power and lower pressure are usually selected for sputtering, which can avoid uneven deposition and overheating caused by excessive power. The operator also needs to set the deposition rate in this step, which is usually controlled at a lower deposition rate to ensure the uniformity of the film layer. The operator starts the sputtering process and continuously monitors the deposition process of the film layer. Through the monitoring system of the PVD integrated sputtering coater-4, the thickness of the film layer is checked in real time to ensure that the deposition amount reaches 70nm;

[0044] In the second step, the operator prepares the molten organic material, puts it into the evaporation source of the evaporation equipment, and checks the sealing of the equipment to ensure that there is no leakage. The operator adjusts the power of the heating source according to the properties of the organic material to ensure that the organic material can reach the required evaporation temperature. By controlling the evaporation rate, the operator ensures that the organic material evaporates evenly and deposits on the IZO layer to form a protective layer with a thickness of 30nm. During the evaporation process, the operator keeps the atmosphere in the equipment pure and avoids temperature fluctuations to ensure the uniformity and adhesion of the organic material layer;

[0045] In the third step, the operator first prepares the CMM mask, which is designed to accurately control the thickness difference of the Yb layer. The mask needs to be accurately aligned to ensure that the film layer is deposited in the target area. The operator places the Yb metal target in the target position of the sputtering equipment and places the CMM mask in the appropriate place. The operator starts the sputtering process and controls the deposition rate of the Yb metal through low-power sputtering. During the sputtering process, the CMM mask will produce a significant height difference, helping the operator to ensure that the thickness of the Yb metal layer meets the design requirements;

[0046] In the fourth step, the operator removes the CMM mask and prepares the second layer of molten organic material, puts it into the evaporation equipment, ensures that the equipment is clean and free of contaminants, and adjusts the power of the heating source and sets the appropriate deposition rate according to the characteristics of the second layer of organic material. Since this layer is mainly used to protect the Yb metal layer, the operator must ensure that the organic material layer evenly covers the Yb layer to form an effective protective film. The operator starts the evaporation equipment and accurately controls the deposition rate and time to ensure that the thickness of the organic material layer is 30nm;

[0047] In the fifth step, the operator again puts the silicon wafer into the sputtering equipment and prepares the IZO target. The equipment settings are similar to the first step, ensuring that the atmosphere is argon and the sputtering gas flow rate is moderate until the target thickness of 70nm is reached;

[0048] In the sixth step, after the deposition of all film layers is completed, the operator transfers the sample to the step meter for film thickness measurement. The step meter calculates the film thickness based on the height difference between the film layers. Through measurement, it can ensure whether the thickness of each film layer meets the design requirements.

[0049] Embodiment 2, based on embodiment 1, Figure 5 and Figure 6 It is shown that the PVD integrated sputtering coating machine 1 4, the first evaporation device 5, the sputtering coating device 6, the second evaporation device 7, and the PVD integrated sputtering coating machine 2 8 are arranged in sequence from right to left in the X-axis direction, and the bottom ends of the PVD integrated sputtering coating machine 1 4, the first evaporation device 5, the sputtering coating device 6, the second evaporation device 7, and the PVD integrated sputtering coating machine 2 8 are jointly provided with a horizontal frame 1, and the conveying device 9 is arranged inside the horizontal frame 1, and the horizontal frame 1 is away from the PVD integrated sputtering coating machine A main engine room 2 is fixed on one side outer wall of a 4, and a partition 3 is fixed at one end inside the main engine room 2. A double-sided belt conveyor 11, a three-axis moving module 13 and a step meter 10 are arranged at the top of the partition 3. The double-sided belt conveyor 11 is used to receive silicon wafer substrates from the conveying device 9. The Z-axis moving end of the three-axis moving module 13 is installed with a pneumatic picking module 14. The three-axis moving module 13 and the pneumatic picking module 14 are used to move the silicon wafer substrates on the double-sided belt conveyor 11 to the detection station of the step meter 10.

[0050] Embodiment 3, based on embodiment 2, Figure 7 , Figure 8 , Fig. 9 It is given that the double-sided belt conveyor 11 is composed of two single-belt conveyors, the feeding direction of the two single-belt conveyors is parallel to the feeding direction of the conveying device 9, and the head and tail ends of the single-belt conveyors and the conveying device 9 are butted, and a push module 12 is arranged on the outer walls on the opposite sides of the frames of the two single-belt conveyors. The push module 12 includes a Z-axis double-rod cylinder 1201 installed on the outer wall of one side of the single-belt conveyor frame and an inverted L-supporting arm 1202 installed on the top of the piston rod of the Z-axis double-rod cylinder 1201. The Z-axis double-rod cylinder 1201 and the inverted L-supporting arm 1202 can be used to lift up the silicon wafer substrates conveyed on the two single-belt conveyors so that they can be obtained by the pneumatic picking module 14;

[0051] The three-axis moving module 13 includes two parallel gantries 1303 fixed on the top of the horizontal frame 1, a slide 1301 slidably installed on the top of the two gantries 1303, a Y-axis screw linear module 1304 installed on the top of the slide 1301, and a Z-axis screw linear lifting module 1305 installed on the moving end of the Y-axis screw linear module 1304, an L-shaped bracket 1306 is installed on the moving end of the slide 1301, and the pneumatic pickup module 14 is installed at the bottom end of the L-shaped bracket 1306, and an X-axis screw linear module 1302 for driving the slide 1301, the Y-axis screw linear module 1304, the Z-axis screw linear lifting module 1305, the sputtering coating equipment 6, and the pneumatic pickup module 14 to slide is installed on the outer wall of one side of one of the gantries 1303, and the extension direction of the two gantries 1303 is perpendicular to the extension direction of the double-sided belt conveyor 11;

[0052] The three-axis moving module 13 can accurately control the movement of the silicon wafer substrate and can accurately position and adjust in the three directions of X, Y, and Z, reducing the time and labor cost required for manual operation;

[0053] The pneumatic picking module 14 includes a hanger 1401 fixed at the bottom of the L-shaped bracket 1306 and a plurality of pneumatic suction cups 1402 installed at the bottom edge of the hanger 1401. The pneumatic picking module 14 uses air pressure to remove the silicon wafer substrate from the double-sided belt conveyor, and can complete the substrate transportation work in a high-speed and stable manner. The pneumatic picking module 14 can avoid direct contact with the silicon wafer substrate, reducing the potential damage and errors caused by mechanical contact.

[0054] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device.

[0055] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A method for calibrating the film thickness of an oxide film in an atmospheric environment by thin film stacking, characterized in that: The method comprises the following steps: S1, depositing a first IZO thin film layer on a bare silicon wafer substrate by using a PVD integrated sputtering coating machine (4) and an open mask, adjusting the gas flow, power and deposition rate in a well-controlled argon environment, during the deposition process, the staff monitors the film thickness, stops sputtering after reaching the target design thickness, and checks the quality of the film, and the bare silicon wafer substrate with the IZO thin film layer is transported to the first evaporation device (5) by a conveying device (9); S2, using a first evaporation device (5) and an open mask to deposit a first molten organic material layer on the first IZO thin film layer, the power of the heating source and the evaporation rate need to be adjusted to ensure that the organic film layer is uniform and has no defects, until the molten organic material layer reaches a target design thickness, and the bare silicon wafer substrate with the IZO layer and the molten organic material layer is continuously conveyed to the sputtering coating device (6) through the conveying device (9); S3, using a sputtering coating device (6) and a CMM mask to deposit a rare earth metal Yb layer on the first molten organic material layer of the bare silicon wafer substrate. Since Yb ​​metal is easily oxidized, the operator needs to pay attention to the oxygen content in the atmosphere and adjust the sputtering parameters to control the deposition rate and the film thickness. The thickness of the deposited metal Yb layer is greater than the thickness of the molten organic material layer. S4, using an open mask and a second evaporation device (7) to deposit a second molten organic material layer on the metal Yb layer, and the bare silicon wafer substrate with four thin film layers is continuously transferred to the second PVD integrated sputtering coating machine (8) through a conveying device (9); S5, using the PVD integrated sputtering coating machine 2 (8) and an open mask to deposit a second IZO thin film layer again. The deposition of this layer is the same as the first step, and the thickness of the two layers is the same, ensuring that the IZO film layer uniformly covers the previous molten organic material layer; S6, the bare silicon wafer substrate with a laminated structure is delivered to the main machine room (2) by the conveying device (9) and received by the double-sided belt conveyor (11). The three-axis moving module (13) and the pneumatic picking module (14) place the formed bare silicon wafer substrate on the detection station of the step meter (10). The step meter (10) performs precise film thickness measurement on each layer of the film to confirm whether the set target thickness is reached.

2. The method for calibrating the film thickness of an oxide film in an atmospheric environment by thin film stacking according to claim 1, characterized in that: The target thickness of the first IZO thin film layer is 70nm, the target thickness of the first molten organic material layer is 30nm, the target thickness of the rare earth metal Yb layer is 50nm, the target thickness of the second molten organic material layer is 30nm, and the target thickness of the second IZO thin film layer is 70nm.

3. The method for calibrating the film thickness of an oxide film in an atmospheric environment by thin film stacking according to claim 2, characterized in that: The target thickness error range of the first IZO thin film layer, the first molten organic material layer, the rare earth metal Yb layer, the second molten organic material layer and the second IZO thin film layer is ±3%.

4. The method for calibrating the film thickness of an oxide film in an atmospheric environment by thin film stacking according to claim 1, characterized in that: The PVD integrated sputtering coating machine (4), the first evaporation device (5), the sputtering coating device (6), the second evaporation device (7), and the PVD integrated sputtering coating machine (8) are arranged in sequence from right to left in the X-axis direction. The bottom ends of the PVD integrated sputtering coating machine (4), the first evaporation device (5), the sputtering coating device (6), the second evaporation device (7), and the PVD integrated sputtering coating machine (8) are commonly provided with a horizontal frame (1), and the conveying device (9) is arranged inside the horizontal frame (1).

5. The method for realizing film thickness calibration of an oxide film in an atmospheric environment by thin film stacking according to claim 4, characterized in that: A main engine room (2) is fixed on the outer wall of one side of the horizontal frame (1) away from the PVD integrated sputtering coating machine (4), and a partition (3) is fixed at one end inside the main engine room (2). The double-sided belt conveyor (11), the three-axis moving module (13) and the step meter (10) are arranged on the top of the partition (3). The double-sided belt conveyor (11) is used to receive silicon wafer substrates from the conveying device (9). The Z-axis moving end of the three-axis moving module (13) is installed with a pneumatic pickup module (14). The three-axis moving module (13) and the pneumatic pickup module (14) are used to move the silicon wafer substrates on the double-sided belt conveyor (11) to the detection station of the step meter (10).

6. The method for realizing film thickness calibration of an oxide film in an atmospheric environment by thin film stacking according to claim 5, characterized in that: The double-sided belt conveyor (11) is composed of two single-belt conveyors, the feeding direction of the two single-belt conveyors is parallel to the feeding direction of the conveying device (9), and the head and tail ends of the single-belt conveyors and the conveying device (9) are butted, and push modules (12) are arranged on the outer walls of the opposite sides of the frames of the two single-belt conveyors.

7. The method for realizing film thickness calibration of an oxide film in an atmospheric environment by thin film stacking according to claim 6, characterized in that: The push module (12) comprises a Z-axis double-rod cylinder (1201) mounted on an outer wall of one side of a single-belt conveyor frame and an inverted L-supporting arm (1202) mounted on the top end of the piston rod of the Z-axis double-rod cylinder (1201).

8. The method for calibrating the film thickness of an oxide film in an atmospheric environment by thin film stacking according to claim 5, characterized in that: The three-axis moving module (13) comprises two parallel gantries (1303) fixed at the top of the horizontal frame (1), a slide (1301) slidably mounted at the top of the two gantries (1303), a Y-axis screw linear module (1304) mounted at the top of the slide (1301), and a Z-axis screw linear lifting module (1305) mounted at the moving end of the Y-axis screw linear module (1304), wherein the moving end of the slide (1301) An L-shaped bracket (1306) is installed, and the pneumatic pickup module (14) is installed at the bottom end of the L-shaped bracket (1306). An X-axis screw linear module (1302) for driving the slide (1301), the Y-axis screw linear module (1304), the Z-axis screw linear lifting module (1305), the sputtering coating device (6), and the pneumatic pickup module (14) to slide is installed on the outer wall of one side of one of the gantry frames (1303).

9. The method for realizing film thickness calibration of an oxide film in an atmospheric environment by thin film stacking according to claim 8, characterized in that: The extension direction of the two gantries (1303) is perpendicular to the extension direction of the double-sided belt conveyor (11).

10. The method for realizing film thickness calibration of an oxide film in an atmospheric environment by thin film stacking according to claim 9, characterized in that: The pneumatic picking module (14) comprises a hanger (1401) fixed at the bottom end of the L-shaped bracket (1306) and a plurality of pneumatic suction cups (1402) installed at the bottom edge of the hanger (1401).

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