Polishing effect detection method for indium phosphide wafer

Abstract

The invention relates to the technical field of image analysis, in particular to a polishing effect detection method for an indium phosphide wafer, which comprises the following steps: evaluating the polishing quality through model comparison of three-dimensional images before and after polishing, analyzing the polishing retention difficulty according to the internal defect data and defect aggregation degree of the crystal before polishing, and determining the polishing retention difficulty of the indium phosphide wafer. And performing polishing damage analysis on the basis of the obtained internal defect data of the wafer before and after polishing, and analyzing the polishing effect according to the obtained polishing quality evaluation result, polishing maintenance difficulty analysis result and polishing damage, so that the polishing quality of the polishing equipment in the polishing process is accurately evaluated on the basis of model comparison of the three-dimensional images before and after polishing; and meanwhile, accurate analysis on damage and maintenance difficulty in the polishing process is considered, so that the polishing effect is comprehensively evaluated, and the accuracy and rationality of evaluation on the polishing effect are improved.

Description

Background Art

[0002] Indium phosphide (InP) wafer is an important semiconductor material, widely used in optoelectronics and high-speed electronics. InP wafer has direct band gap characteristics, which makes it widely used in optoelectronic devices such as laser diodes, photodetectors and optoelectronic integrated circuits. In addition, due to its high electron mobility and excellent thermal conductivity, InP is also suitable for high-frequency and high-speed electronic devices, such as radar systems, satellite communications and high-frequency amplifiers in optical fiber communications. In the process of manufacturing InP wafers, chemical vapor deposition (CVD), molecular beam epitaxy (MBE) or metal organic chemical vapor deposition (MOCVD) are usually used. These technologies can accurately control the composition and structure of the material to meet the needs of different applications.

[0003] The processing technology of indium phosphide wafers includes slicing, grinding, polishing and other processes. Indium phosphide crystal rods are cut into indium phosphide wafers, which are then ground and polished. Polishing is the last process of indium phosphide finishing and directly determines the performance of indium phosphide wafers.

[0004] In the prior art, in the process of testing the polishing effect of indium phosphide wafers, the polishing effect is usually analyzed only by comparing the flatness of the polishing plane, and the analysis of the damage and maintenance difficulty during the polishing process cannot be considered, resulting in the accuracy and rationality of the polishing effect evaluation being relatively low. Summary of the invention

[0005] In order to overcome the defects and shortcomings of the prior art, the present application provides a polishing effect detection method for indium phosphide wafers, which accurately evaluates the polishing quality of the polishing equipment during the polishing process based on model comparison of three-dimensional images before and after polishing, while taking into account accurate analysis of damage and maintenance difficulty during the polishing process, so as to comprehensively evaluate the polishing effect, thereby improving the accuracy and rationality of the polishing effect evaluation.

[0006] In order to achieve the above objectives, this application adopts the following technical solutions: In a first aspect, the present application provides a method for detecting the polishing effect of an indium phosphide wafer, comprising the following steps: Acquire a three-dimensional image of the indium phosphide wafer before polishing, and simultaneously acquire a three-dimensional image of the indium phosphide wafer before polishing, and simultaneously acquire internal defect data of the wafer before and after polishing; The polishing quality is evaluated by comparing the models of the three-dimensional images before and after polishing to obtain a polishing quality evaluation result; Perform polishing maintenance difficulty analysis based on the crystal internal defect data and defect aggregation degree before polishing to obtain the polishing maintenance difficulty analysis result; Performing polishing damage analysis based on the internal defect data of the wafer before and after polishing to obtain a polishing damage analysis result; The polishing effect is analyzed based on the obtained polishing quality evaluation results, polishing maintenance difficulty analysis results and polishing damage.

[0007] Optionally, the wafer internal defect data before and after polishing specifically includes: data on the type, position, size and range of the crystal internal defects.

[0008] Optionally, the step of evaluating the polishing quality by comparing the models of the three-dimensional images before and after polishing to obtain the polishing quality evaluation result comprises: Obtaining a model of the three-dimensional image before and after polishing, and obtaining height data of each point on the polishing surface before and after polishing; The height data of each point on the polishing surface before and after polishing are imported into the polishing quality calculation formula to calculate the polishing quality, wherein the polishing quality calculation formula is: , where V is the number of monitoring points on the polishing surface before polishing, N is the number of monitoring points on the polishing surface after polishing, xj is the height of the jth monitoring point on the polishing surface relative to the polishing surface after polishing, xm is the safety height of the polishing surface relative to the polishing surface after polishing, tc is the height of the cth monitoring point on the polishing surface relative to the polishing surface before polishing, and tm is the safety height of the monitoring point on the polishing surface relative to the polishing surface before polishing. In this formula, the smoothness of the polishing surface is quantitatively analyzed by comprehensively analyzing the height of each point on the polishing surface after polishing, while the smoothness before polishing is taken into account to analyze the polishing task volume, and the polishing quality is comprehensively evaluated.

[0009] Optionally, the polishing maintenance difficulty analysis based on the crystal internal defect data and defect aggregation degree before polishing includes the following specific steps: The internal defect data and the degree of defect aggregation of the crystal before polishing are obtained, and the polishing fragility coefficient is evaluated based on the internal defect data and the degree of defect aggregation of the crystal before polishing, wherein the calculation formula of the polishing fragility coefficient is: , where Lm is the length of the crystal, Lc is the average distance of the crystal defects, U is the number of defects inside the crystal, Vu is the volume of the u-th defect, and Vm is the volume of the crystal; Obtain the polishing fragility coefficient of the corresponding crystal and the average distance data of each defect relative to the polishing evaluation, and import the obtained polishing fragility coefficient and the average distance data of each defect relative to the polishing evaluation into the polishing retention difficulty calculation formula to calculate the polishing retention difficulty, wherein the polishing retention difficulty calculation formula is: , where ln() is the logarithm with the natural constant e as the base, hm is the thickness data of the crystal, and hs is the average distance data of each defect relative to the polishing evaluation; in this step, the difficulty of preserving the crystal shape during the polishing process is analyzed by the nature and position of the defects during the polishing process.

[0010] Optionally, the step of performing polishing damage analysis based on acquiring internal defect data of the wafer before and after polishing includes: Obtain the internal defect data of the wafer before and after polishing, and import the internal defect data of the wafer before and after polishing into the polishing damage coefficient calculation formula to calculate the polishing damage coefficient, wherein the polishing damage coefficient calculation formula is: , where D is the number of defects inside the wafer after polishing, and Vzd is the volume of the dth defect after polishing.

[0011] Optionally, analyzing the polishing effect according to the obtained polishing quality evaluation result, polishing maintenance difficulty analysis result and polishing damage analysis includes the following specific steps: Obtain the calculated polishing quality, polishing maintenance difficulty and polishing damage coefficient, and substitute them into the polishing effect calculation formula to calculate the polishing effect, where the polishing effect calculation formula is: , where a is the weight of polishing quality proportion; The polishing effect is compared with the set polishing effect threshold. If the polishing effect is greater than or equal to the set polishing effect threshold, it means that the polishing effect of the polishing equipment meets the requirements. If the polishing effect is less than the set polishing effect threshold, it means that the polishing effect of the polishing equipment does not meet the requirements and the equipment needs to be replaced.

[0012] In a second aspect, the present application provides a polishing effect detection system for an indium phosphide wafer, comprising: A data extraction module is used to obtain a three-dimensional image of the indium phosphide wafer before polishing, and simultaneously obtain a three-dimensional image of the indium phosphide wafer before polishing, and simultaneously obtain internal defect data of the wafer before and after polishing; A polishing quality evaluation result module is used to evaluate the polishing quality by comparing the models of the three-dimensional images before and after polishing to obtain a polishing quality evaluation result; A maintenance difficulty analysis module is used to perform a polishing maintenance difficulty analysis based on the internal defect data of the crystal before polishing and the degree of defect aggregation to obtain a polishing maintenance difficulty analysis result; A polishing damage analysis module performs polishing damage analysis based on the internal defect data of the wafer before and after polishing to obtain a polishing damage analysis result; The polishing effect analysis module is used to analyze the polishing effect according to the obtained polishing quality evaluation results, polishing maintenance difficulty analysis results and polishing damage.

[0013] In a third aspect, the present application provides an electronic device, comprising: a processor and a memory, wherein the memory stores a computer program that can be called by the processor, and the processor executes a polishing effect detection method for indium phosphide wafers by calling the computer program stored in the memory.

[0014] In a fourth aspect, the present application provides a computer-readable storage medium storing instructions, which, when executed on a computer, enable the computer to execute a polishing effect detection method for indium phosphide wafers.

[0015] Compared with the prior art, this application has the following advantages and beneficial effects: The present application evaluates the polishing quality by comparing the models of the three-dimensional images before and after polishing, performs a polishing maintenance difficulty analysis based on the internal defect data of the crystal before polishing and the degree of defect aggregation, performs a polishing damage analysis based on the internal defect data of the wafer before and after polishing, analyzes the polishing effect based on the obtained polishing quality evaluation results, the polishing maintenance difficulty analysis results and the polishing damage analysis, accurately evaluates the polishing quality of the polishing equipment during the polishing process based on the model comparison of the three-dimensional images before and after polishing, while taking into account the accurate analysis of the damage and maintenance difficulty during the polishing process, so as to comprehensively evaluate the polishing effect, thereby improving the accuracy and rationality of the polishing effect evaluation. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Other features, objects and advantages of the present application will become more apparent by reading the detailed description of non-limiting embodiments made with reference to the following drawings: Figure 1 It is a schematic diagram of the overall process of the polishing effect detection method for indium phosphide wafers provided in an embodiment of the present application; Figure 2 It is a structural schematic diagram of a polishing effect detection system for an indium phosphide wafer provided in an embodiment of the present application; Figure 3 It is a schematic diagram of the indium phosphide wafer processing process provided in an embodiment of the present application. DETAILED DESCRIPTION

[0017] The technical solution of the present application is described in detail below through the accompanying drawings and specific embodiments. It should be understood that the embodiments of the present application and the specific features in the embodiments are detailed descriptions of the technical solution of the present application, rather than limitations on the technical solution of the present application. In the absence of conflict, the embodiments of the present application and the technical features in the embodiments can be combined with each other.

[0018] See also Figure 1 , Figure 1 : is a schematic diagram of the overall process of the polishing effect detection method for indium phosphide wafers provided in an embodiment of the present application, which specifically includes the following steps: Step 1, obtaining a three-dimensional image of the indium phosphide wafer before polishing, and obtaining a three-dimensional image of the indium phosphide wafer before polishing after polishing, and obtaining internal defect data of the wafer before and after polishing; In this embodiment, the internal defect data of the wafer before and after polishing specifically includes: the type, location, size and range data of the internal defects of the crystal; using high-resolution detection equipment, such as a scanning electron microscope (SEM), a transmission electron microscope (TEM) or an atomic force microscope (AFM), to observe and record the defects inside and on the surface of the wafer, including dislocations, holes, cracks, etc.; collecting data such as the size, shape, distribution and density of the defects; The processing of indium phosphide wafers is a complex and delicate process. Figure 3 As shown, multiple steps are involved to ensure that the quality of the wafer meets the application requirements of optoelectronic and electronic devices. The following are the steps for indium phosphide wafer processing: Single crystal growth: First, grow indium phosphide single crystals through methods such as liquid phase epitaxy (LPE), vapor deposition (CVD) or molecular beam epitaxy (MBE); Cutting (slicing): Cut the grown indium phosphide single crystal ingot into thin slices. This process uses diamond blades or laser cutting technology; Grinding: Double-sided grinding of the cut wafers to reduce thickness and improve flatness. This step may go through two stages: coarse grinding and fine grinding; Primary etching: Use chemical etching to remove surface damage layers and impurities. This step may also be used to adjust the thickness of the wafer; Thinning: Continue to thin the wafer mechanically or chemically until the desired thickness is reached; Secondary etching: perform a second etching to further improve the flatness and cleanliness of the wafer surface; Rough polishing: use abrasives such as diamond powder to perform rough polishing on the wafer surface to reduce surface roughness; Intermediate polishing: continue to use finer abrasives for intermediate polishing to further improve surface quality; Fine polishing: use chemical mechanical polishing (CMP) technology for fine polishing to achieve atomic-level surface smoothness; Cleaning: use a special cleaning solution to remove surface contaminants and polishing residues to ensure the purity of the wafer; Inspection and testing: inspect the wafer through optical microscopy, X-ray diffraction and other means to evaluate its surface quality, crystal structure and dislocation density, etc. This application is mainly aimed at the analysis of the polishing effect of the rough polishing and intermediate polishing processes. Since the effect evaluation of the polishing process usually has roughly the same specifications and product hardness of the products produced by a manufacturer of indium phosphide wafers, the specifications and product hardness of the products produced are automatically substituted when the system is set up. The specifications and product hardness of the products produced are not considered in this technical solution. It does not mean that the specifications and product hardness of the products produced have no effect on the polishing effect, but that the effect of the same product is negligible; Step 2: Evaluate the polishing quality by comparing the three-dimensional images before and after polishing to obtain a polishing quality evaluation result; In this embodiment, the polishing quality is evaluated by comparing the models of the three-dimensional images before and after polishing, and the steps of obtaining the polishing quality evaluation result include: Obtaining a model of the three-dimensional image before and after polishing, and obtaining height data of each point on the polishing surface before and after polishing; The height data of each point on the polishing surface before and after polishing are imported into the polishing quality calculation formula to calculate the polishing quality, wherein the polishing quality calculation formula is: , where V is the number of monitoring points on the polishing surface before polishing, N is the number of monitoring points on the polishing surface after polishing, xj is the height of the jth monitoring point on the polishing surface relative to the polishing surface after polishing, xm is the safety height of the polishing surface relative to the polishing surface after polishing, tc is the height of the cth monitoring point on the polishing surface relative to the polishing surface before polishing, and tm is the safety height of the monitoring point on the polishing surface relative to the polishing surface before polishing. In this formula, the smoothness of the polishing surface is quantitatively analyzed by comprehensively analyzing the height of each point on the polishing surface after polishing, while the smoothness before polishing is taken into account to analyze the polishing task amount, and the polishing quality is comprehensively evaluated; Step 3: Perform polishing maintenance difficulty analysis based on the crystal internal defect data and defect aggregation degree before polishing to obtain a polishing maintenance difficulty analysis result; In this embodiment, performing polishing maintenance difficulty analysis based on the crystal internal defect data and defect aggregation degree before polishing includes the following specific steps: The internal defect data and the degree of defect aggregation of the crystal before polishing are obtained, and the polishing fragility coefficient is evaluated based on the internal defect data and the degree of defect aggregation of the crystal before polishing, wherein the calculation formula of the polishing fragility coefficient is: , where Lm is the length of the crystal, Lc is the average distance of the crystal defects, U is the number of defects inside the crystal, Vu is the volume of the u-th defect, and Vm is the volume of the crystal. Before polishing the indium phosphide wafer, it is crucial to evaluate the internal defect data and the degree of defect aggregation of the crystal, because these factors directly affect the effect of the polishing process and the quality of the wafer; Obtain the polishing fragility coefficient of the corresponding crystal and the average distance data of each defect relative to the polishing evaluation, and import the obtained polishing fragility coefficient and the average distance data of each defect relative to the polishing evaluation into the polishing retention difficulty calculation formula to calculate the polishing retention difficulty, wherein the polishing retention difficulty calculation formula is: , where ln() is the logarithm with the natural constant e as the base, hm is the crystal thickness data, and hs is the average distance data of each defect relative to the polishing evaluation; in this step, the difficulty of preserving the crystal shape during the polishing process is analyzed by the nature and position of the defects during the polishing process; Step 4: Perform polishing damage analysis based on the internal defect data of the wafer before and after polishing to obtain a polishing damage analysis result; In this embodiment, the steps of performing polishing damage analysis based on obtaining internal defect data of the wafer before and after polishing include: Obtain the internal defect data of the wafer before and after polishing, and import the internal defect data of the wafer before and after polishing into the polishing damage coefficient calculation formula to calculate the polishing damage coefficient, wherein the polishing damage coefficient calculation formula is: , where D is the number of defects inside the wafer after polishing, and Vzd is the volume of the dth defect after polishing; Step 5: Analyze the polishing effect according to the polishing quality evaluation results, polishing maintenance difficulty analysis results and polishing damage; In this embodiment, the polishing effect according to the obtained polishing quality evaluation result, polishing maintenance difficulty analysis result and polishing damage analysis includes the following specific steps: Obtain the calculated polishing quality, polishing maintenance difficulty and polishing damage coefficient, and substitute them into the polishing effect calculation formula to calculate the polishing effect, where the polishing effect calculation formula is: , where a is the weight of polishing quality proportion; The polishing effect is compared with the set polishing effect threshold. If the polishing effect is greater than or equal to the set polishing effect threshold, it means that the polishing effect of the polishing device meets the requirements. If the polishing effect is less than the set polishing effect threshold, it means that the polishing effect of the polishing device does not meet the requirements and the device needs to be replaced. It should be noted in this embodiment that the value determination method of the setting parameters in this embodiment is obtained by experiments by a technician in this field. The specific acquisition method is, for example, obtaining a historical three-dimensional image of an indium phosphide wafer before polishing, and obtaining a three-dimensional image of the indium phosphide wafer before polishing after polishing. At the same time, the internal defect data of the wafer before and after polishing are obtained and substituted into each step to obtain the polishing effect. Then, experts in this field and product usage are used to comprehensively judge whether these products meet the polishing requirements, and the judgment results of whether the products meet the polishing requirements and the calculated polishing effect are imported into the fitting software, and the value of the setting parameter that meets the maximum judgment accuracy is output.

[0019] See also Figure 2 , Figure 2 : is a structural schematic diagram of a polishing effect detection system for an indium phosphide wafer provided in an embodiment of the present application. This embodiment provides a polishing effect detection system for an indium phosphide wafer, comprising: A data extraction module is used to obtain a three-dimensional image of the indium phosphide wafer before polishing, and simultaneously obtain a three-dimensional image of the indium phosphide wafer before polishing, and simultaneously obtain internal defect data of the wafer before and after polishing; A polishing quality evaluation result module is used to evaluate the polishing quality by comparing the models of the three-dimensional images before and after polishing to obtain a polishing quality evaluation result; A maintenance difficulty analysis module is used to perform a polishing maintenance difficulty analysis based on the internal defect data of the crystal before polishing and the degree of defect aggregation to obtain a polishing maintenance difficulty analysis result; A polishing damage analysis module performs polishing damage analysis based on the internal defect data of the wafer before and after polishing to obtain a polishing damage analysis result; The polishing effect analysis module is used to analyze the polishing effect according to the obtained polishing quality evaluation results, polishing maintenance difficulty analysis results and polishing damage.

[0020] The above-mentioned parameters in the polishing effect detection system for indium phosphide wafers of the present application and the steps for each unit module to achieve corresponding functions can refer to the parameters and steps in the embodiment of the polishing effect detection method for indium phosphide wafers mentioned above, and will not be repeated here.

[0021] The embodiment of the present application also provides an electronic device, including a memory, a processor and a communication bus; the memory and the processor are connected via the communication bus. The memory stores a polishing effect detection method for indium phosphide wafers provided in the above embodiment, which can be loaded and executed by the processor.

[0022] The memory can be used to store instructions, programs, codes, code sets or instruction sets. The memory can include a program storage area and a data storage area, wherein the program storage area can store instructions for implementing an operating system, instructions for at least one function, and instructions for implementing the polishing effect detection method for indium phosphide wafers provided in the above embodiment, etc.; the data storage area can store data involved in the polishing effect detection method for indium phosphide wafers provided in the above embodiment, etc.

[0023] The processor may include one or more processing cores. The processor executes various functions and processes data of the present application by running or executing instructions, programs, code sets or instruction sets stored in the memory, calling data stored in the memory. The processor may be at least one of an Application Specific Integrated Circuit (ASIC), a Digital Signal Processor (DSP), a Digital Signal Processing Device (DSPD), a Programmable Logic Device (PLD), a Field Programmable Gate Array (FPGA), a Central Processing Unit (CPU), a controller, a microcontroller and a microprocessor. It is understandable that for different devices, the electronic device used to implement the above-mentioned processor function may also be other, and the embodiments of the present application are not specifically limited.

[0024] The communication bus may include a path to transmit information between the above components. The communication bus may be a PCI (Peripheral Component Interconnect) bus or an EISA (Extended Industry Standard Architecture) bus, etc. The communication bus may be divided into an address bus, a data bus, a control bus, etc. For ease of representation.

[0025] This embodiment provides a computer-readable storage medium on which an erasable computer program is stored. When the computer program is run on a computer device, the computer device executes the above-mentioned polishing effect detection method for indium phosphide wafers.

[0026] It should be understood that in the various embodiments of the present application, the size of the serial numbers of the above-mentioned processes does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.

[0027] It should be understood that determining B based on A does not mean determining B only based on A. B can also be determined based on A and / or other information.

[0028] Those skilled in the art will appreciate that the present application may be implemented as a system, method or computer program product.

[0029] Therefore, the present application can be specifically implemented in the following forms, namely: it can be complete hardware, it can be complete software (including firmware, resident software, microcode, etc.), or it can be a combination of hardware and software, which is generally referred to as "circuit", "module" or "system" in the present application. In addition, in some embodiments, the present application can also be implemented in the form of a computer program product in one or more computer-readable media, and the computer-readable medium contains computer-readable program code.

[0030] Any combination of one or more computer-readable media may be used. A computer-readable medium may be a computer-readable signal medium or a computer-readable storage medium. A computer-readable storage medium may be, for example, but not limited to, an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, device, or device, or any combination thereof. More specific examples (a non-exhaustive list) of computer-readable storage media include: an electrical connection with one or more wires, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination thereof. In this document, a computer-readable storage medium may be any tangible medium containing or storing a program that may be used by or in conjunction with an instruction execution system, device, or device.

[0031] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations on the present application. Ordinary technicians in this field can change, modify, replace and modify the above embodiments within the scope of the present application.

Claims

1. A method for detecting the polishing effect of an indium phosphide wafer, characterized in that: The following steps are involved: Acquire a three-dimensional image of the indium phosphide wafer before polishing, and simultaneously acquire a three-dimensional image of the indium phosphide wafer before polishing, and simultaneously acquire internal defect data of the wafer before and after polishing; The polishing quality is evaluated by comparing the models of the three-dimensional images before and after polishing to obtain a polishing quality evaluation result; Perform polishing maintenance difficulty analysis based on the crystal internal defect data and defect aggregation degree before polishing to obtain the polishing maintenance difficulty analysis result; Performing polishing damage analysis based on the internal defect data of the wafer before and after polishing to obtain a polishing damage analysis result; The polishing effect is analyzed based on the obtained polishing quality evaluation results, polishing maintenance difficulty analysis results and polishing damage.

2. The polishing effect detection method for indium phosphide wafer according to claim 1, characterized in that: The step of evaluating the polishing quality by comparing the models of the three-dimensional images before and after polishing to obtain the polishing quality evaluation result comprises: Obtaining a model of the three-dimensional image before and after polishing, and obtaining height data of each point on the polishing surface before and after polishing; The height data of each point on the polishing surface before and after polishing are imported into the polishing quality calculation formula to calculate the polishing quality, wherein the polishing quality calculation formula is: , where V is the number of monitoring points on the polishing surface before polishing, N is the number of monitoring points on the polishing surface after polishing, xj is the height of the jth monitoring point on the polishing surface relative to the polishing surface after polishing, xm is the safety height of the polishing surface relative to the polishing surface after polishing, tc is the height of the cth monitoring point on the polishing surface before polishing relative to the polishing surface, and tm is the safety height of the monitoring point on the polishing surface relative to the polishing surface before polishing.

3. The polishing effect detection method for indium phosphide wafer according to claim 2, characterized in that: The polishing maintenance difficulty analysis based on the crystal internal defect data and defect aggregation degree before polishing includes the following specific steps: The internal defect data and the degree of defect aggregation of the crystal before polishing are obtained, and the polishing fragility coefficient is evaluated based on the internal defect data and the degree of defect aggregation of the crystal before polishing, wherein the calculation formula of the polishing fragility coefficient is: , where Lm is the length of the crystal, Lc is the average distance of the crystal defects, U is the number of defects inside the crystal, Vu is the volume of the u-th defect, and Vm is the volume of the crystal; Obtain the polishing fragility coefficient of the corresponding crystal and the average distance data of each defect relative to the polishing evaluation, and import the obtained polishing fragility coefficient and the average distance data of each defect relative to the polishing evaluation into the polishing retention difficulty calculation formula to calculate the polishing retention difficulty.

4. The polishing effect detection method for indium phosphide wafer according to claim 3, characterized in that: The polishing maintenance difficulty calculation formula is: , where ln() is the logarithm with the natural constant e as the base, hm is the thickness data of the crystal, and hs is the average distance data of each defect relative to the polishing evaluation.

5. The method for detecting the polishing effect of an indium phosphide wafer according to claim 1, characterized in that: The step of performing polishing damage analysis based on obtaining wafer internal defect data before and after polishing includes: Obtain the internal defect data of the wafer before and after polishing, and import the internal defect data of the wafer before and after polishing into the polishing damage coefficient calculation formula to calculate the polishing damage coefficient, wherein the polishing damage coefficient calculation formula is: , where D is the number of defects inside the wafer after polishing, and Vzd is the volume of the dth defect after polishing.

6. The method for detecting the polishing effect of an indium phosphide wafer according to claim 1, characterized in that: The polishing effect analysis based on the obtained polishing quality evaluation results, polishing maintenance difficulty analysis results and polishing damage analysis includes the following specific steps: Obtain the calculated polishing quality, polishing maintenance difficulty and polishing damage coefficient, and substitute them into the polishing effect calculation formula to calculate the polishing effect, where the polishing effect calculation formula is: , where a is the weight of polishing quality proportion; The polishing effect is compared with the set polishing effect threshold. If the polishing effect is greater than or equal to the set polishing effect threshold, it means that the polishing effect of the polishing equipment meets the requirements. If the polishing effect is less than the set polishing effect threshold, it means that the polishing effect of the polishing equipment does not meet the requirements and the equipment needs to be replaced.

7. The method for detecting the polishing effect of an indium phosphide wafer according to claim 1, characterized in that: The wafer internal defect data before and after polishing specifically include: type, position, size and range data of crystal internal defects.

8. An electronic device comprising: A processor and a memory, wherein the memory stores a computer program that can be called by the processor; characterized in that the processor executes the polishing effect detection method for indium phosphide wafers as described in any one of claims 1 to 6 by calling the computer program stored in the memory.

9. A computer-readable storage medium, characterized in that: Instructions are stored, and when the instructions are run on a computer, the computer is caused to execute the polishing effect detection method for indium phosphide wafers as described in any one of claims 1 to 6.

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