Radiating structure for three-dimensional interconnection of radio frequency microsystem

Abstract

The invention belongs to the technical field of radio frequency microsystems, and particularly relates to a radio frequency microsystem three-dimensional interconnected heat dissipation structure which comprises a packaging box, an upper SiP and a lower SiP, the upper SiP and the lower SiP are installed in the packaging box, the packaging box comprises a top plate and a bottom plate, the top plate and the bottom plate are connected through a sealing rubber head, a sealing block is installed between the top plate and the bottom plate in a sliding mode, and the sealing rubber head is connected with the sealing block. The sealing block abuts against the sealing rubber head. In the process that the sealing cover packages the upper SiP and the lower SiP, the sealing cover extrudes the sealing block, so that the sealing block slides towards the interior of the packaging box, at the moment, the sealing block drives the sealing rubber head to seal the connection position of the upper SiP and the lower SiP and isolate the BGA solder balls, when cooling liquid is injected into the packaging box, the cooling liquid can directly make contact with the lower SiP and the upper SiP, and therefore the sealing effect of the upper SiP and the lower SiP is improved. And the heat dissipation efficiency of the cooling liquid on the lower SiP and the upper SiP is ensured.

Description

Technical Field

[0001] The invention belongs to the technical field of radio frequency microsystems, and in particular relates to a three-dimensionally interconnected heat dissipation structure of a radio frequency microsystem. Background Art

[0002] As an advanced integrated packaging technology under the trend of system miniaturization, RF microsystem integration technology has become a major basic technology that leads equipment development and promotes electronic technology innovation. It is an important technical platform that supports the transformation of electronic information equipment capabilities in the fields of sensing and communication. It is also one of the core technologies in current electronic information technology research.

[0003] The existing high-power RF microsystem is achieved by packaging the RF chip into two upper and lower SiPs, and the upper and lower SiPs are interconnected by ball grid array packaging BGA or SMD, such as the Chinese patent with publication number CN114613751B. The greater the power of the RF microsystem, the higher its power consumption and the more serious the heat generation. The conventional heat dissipation method is to lay microchannels at the bottom of the RF chip, but the high-power RF microsystem is packaged in a vertically integrated manner, which results in poor heat dissipation effect of the microchannel on the upper SiP. In order to solve the above problems, the prior art has an immersion liquid cooling method for heat dissipation of high-power RF microsystems, such as the Chinese patent with publication number CN110010570A. Since the upper and lower SiPs are packaged by a ball grid array, before liquid cooling, the ball grid array connecting the upper and lower SiPs needs to be specially treated, and special coolant and supporting equipment and containers are required, which greatly increases the cost and is not conducive to popularization. Summary of the invention

[0004] The purpose of the present invention is to provide a three-dimensional interconnected heat dissipation structure of a radio frequency microsystem to solve the technical problems in the prior art in view of the shortcomings of the prior art.

[0005] The object of the present invention can be achieved by the following technical scheme: A heat dissipation structure of a three-dimensionally interconnected radio frequency microsystem, comprising a packaging box and an upper SiP and a lower SiP installed inside the packaging box, wherein the upper SiP and the lower SiP are connected by BGA solder balls, and a cover is installed on the packaging box; The packaging box comprises a top plate and a bottom plate, the top plate and the bottom plate are connected by a sealing rubber head, the sealing rubber head is aligned with the connection between the upper SiP and the lower SiP, a sealing block is slidably installed between the top plate and the bottom plate, and the sealing block abuts against the sealing rubber head; The top plate and the bottom plate are respectively provided with a liquid outlet and a liquid inlet, a liquid flow hole is provided on the sealing block away from the liquid inlet, and a liquid flow groove is provided on the top plate and the bottom plate, and the liquid flow hole and the liquid flow groove are connected.

[0006] As a further optimization or improvement of the present solution, the upper SiP and the lower SiP are located inside the top plate and the bottom plate respectively, and the lower SiP is sealed and connected to the bottom plate.

[0007] As a further optimization or improvement of the present solution, sealing sheets are installed on the top plate and the bottom plate, and the sealing sheets are in contact with the sealing blocks.

[0008] As a further optimization or improvement of this solution, a speed regulating assembly is installed inside the top plate, the speed regulating assembly includes a flow regulating plate and a slot, the flow regulating plate is rotatably installed on the top plate, a slot is provided on the top plate, and the slot is located on the flow regulating plate; A heat absorption cavity plate is installed on the cover, the heat absorption cavity plate contacts the top of the SiP, a connecting cavity tube is installed on the heat absorption cavity plate, the connecting cavity tube is connected to the heat absorption cavity plate, an elastic diaphragm is installed on the connecting cavity tube, the connecting cavity tube is inserted into the slot, and the elastic diaphragm contacts the flow regulating plate.

[0009] As a further optimization or improvement of the present solution, a plurality of micro chambers are arranged inside the heat absorption chamber plate, two connecting chamber tubes are respectively installed at both ends of each micro chamber, the connecting chamber tubes are inserted into the slots, and the elastic diaphragms on the connecting chamber tubes are in contact with the flow regulating plate.

[0010] As a further optimization or improvement of this solution, the sealing rubber head abuts against the connection between the upper SiP and the lower SiP; when installing the cover, the cover drives the sealing block to be squeezed into the packaging box, so that the sealing block drives the top plate to seal the connection end of the upper SiP and the lower SiP.

[0011] Beneficial effects of the present invention: (1) During the process of packaging the upper SiP and the lower SiP with the sealing cover in the present invention, the sealing cover presses the sealing block to make the sealing block slide toward the inside of the packaging box. At this time, the sealing block drives the sealing rubber head to seal the connection position of the upper SiP and the lower SiP and isolate the BGA solder balls. When the coolant is injected into the packaging box, the coolant can directly contact the lower SiP and the upper SiP, thereby ensuring the heat dissipation efficiency of the coolant on the lower SiP and the upper SiP.

[0012] Compared with microchannel heat dissipation, the present invention improves the heat dissipation efficiency of the upper SiP by directly contacting the upper SiP and the lower SiP with the cooling liquid, thereby avoiding the problem of poor heat dissipation effect of the upper SiP located at the top; Compared with the heat dissipation method of immersion liquid cooling, in the process of using the cover to encapsulate the upper SiP and the lower SiP, the present invention uses the cover to extrude the sealing block and the sealing rubber head to seal the BGA solder balls between the upper SiP and the lower SiP, thereby improving the sealing effect of the connection part between the upper SiP and the lower SiP, and there is no need to waterproof the BGA solder balls. At the same time, the coolant in the present invention can be replaced by other coolants. Compared with the special coolant used in immersion liquid cooling, the present invention can greatly reduce the use cost and is convenient for popularization.

[0013] (2) When the upper SiP and the lower SiP in the present invention are in operation, the heat of the upper SiP is transferred to the heat absorption cavity plate, causing the gas inside the heat absorption cavity plate to expand, thereby driving the elastic diaphragm to bulge. At this time, the elastic diaphragm on the connecting cavity tube drives the flow regulating plate to rotate. When the coolant passes through the flow regulating plate, the passage diameter of the coolant is reduced. When the coolant flow rate remains unchanged, the speed of the coolant passing through the flow regulating plate increases. Therefore, the cooling efficiency of the coolant on the upper SiP is relatively increased, so that the cooling efficiency of the coolant on the upper SiP and the lower SiP can be kept as consistent as possible, avoiding the phenomenon of local temperature increase during the operation of the RF microsystem, and improving the stability of the operation of the RF microsystem. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] The present invention will be further described below in conjunction with the accompanying drawings.

[0015] Figure 1 This is a schematic diagram of the packaging box and cover installation structure.

[0016] Figure 2 It is a schematic diagram of the overall structure of the present invention.

[0017] Figure 3 It is a cross-sectional view of the packaging box structure.

[0018] Figure 4 for Figure 3 Schematic diagram of the local structure of part A.

[0019] Figure 5 Schematic diagram of the internal structure of the packaging box.

[0020] Figure 6 for Figure 5 Schematic diagram of the local structure of part B.

[0021] Figure 7 for Figure 5 Schematic diagram of the local structure of part C.

[0022] Figure 8 Schematic diagram of the bottom structure of the cover.

[0023] Fig. 9 Schematic diagram of the microchamber structure.

[0024] Fig.10 It is a cross-sectional view of the overall structure of the present invention.

[0025] Fig.11 This is a diagram of the connection between the cavity tube and the flow regulating plate.

[0026] The following are marked in the figure: 1. Packaging box; 10. Liquid inlet; 11. Liquid outlet; 12. Sealing block; 13. Top plate; 14. Bottom plate; 15. Sealing rubber head; 16. Sealing sheet; 17. Liquid flow hole; 18. Liquid flow groove; 2. Cover; 3. Upper SiP; 4. Lower SiP; 5. Speed ​​regulating assembly; 51. Flow regulating plate; 52. Slot; 53. Heat absorbing cavity plate; 54. Micro chamber; 55. Connecting cavity tube; 56. Elastic diaphragm; 6. BGA solder ball. DETAILED DESCRIPTION

[0027] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0028] See also Figure 1-Figure 6 , a heat dissipation structure of a radio frequency microsystem three-dimensional interconnection, comprising a packaging box 1 and an upper SiP3 and a lower SiP4 installed inside the packaging box 1, wherein the upper SiP3 and the lower SiP4 are connected via a BGA solder ball 6, and a cover 2 is installed on the packaging box 1; The packaging box 1 includes a top plate 13 and a bottom plate 14, the top plate 13 and the bottom plate 14 are connected by a sealing rubber head 15, the sealing rubber head 15 is aligned with the connection between the upper SiP3 and the lower SiP4, and a sealing block 12 is slidably installed between the top plate 13 and the bottom plate 14, and the sealing block 12 abuts against the sealing rubber head 15; The top plate 13 and the bottom plate 14 are provided with a liquid outlet 11 and a liquid inlet 10 respectively, a liquid flow hole 17 is provided on the sealing block 12 away from the liquid inlet 10, and a liquid flow groove 18 is provided on the top plate 13 and the bottom plate 14, and the liquid flow hole 17 and the liquid flow groove 18 are connected.

[0029] Specifically, the upper SiP3 and the lower SiP4 are located inside the top plate 13 and the bottom plate 14 respectively, and the lower SiP4 is sealed and connected to the bottom plate 14 .

[0030] It should be noted that, during installation, the RF chip needs to be packaged inside the upper SiP3 and the lower SiP4 first, and then the upper SiP3 and the lower SiP4 are connected through the BGA solder ball 6, and then the upper SiP3 and the lower SiP4 are installed in the packaging box 1, so that the bottom of the lower SiP4 is sealed and connected to the bottom plate 14, and finally the cover 2 is installed on the packaging box 1. During this process, the cover 2 squeezes the sealing block 12, so that the sealing block 12 slides toward the inside of the packaging box 1. At this time, the sealing block 12 will drive the sealing rubber head 15 to seal the connection position between the upper SiP3 and the lower SiP4 and isolate the BGA solder ball 6. At this time, the coolant is injected into the bottom plate 14 through the liquid inlet 10. The coolant first passes through the lower SiP4 and dissipates the heat to the lower SiP4, and then the coolant enters the top plate 13 through the liquid flow hole 17 and the liquid flow groove 18. Then the coolant passes through the top plate 13 to dissipate the heat to the upper SiP3, and finally the coolant is output from the liquid outlet 11. The flow trajectory of the coolant is as shown in FIG. Fig.10 As shown by the middle arrow. In this process, the coolant can directly contact the lower SiP4 and the upper SiP3, ensuring the cooling effect of the coolant on the lower SiP4 and the upper SiP3. Compared with microchannel cooling, the present invention improves the cooling efficiency of the upper SiP3 by directly contacting the upper SiP3 and the lower SiP4 with the coolant, avoiding the problem of poor cooling effect of the upper SiP3 located at the top; compared with the cooling method of immersion liquid cooling, the present invention uses the cover 2 to squeeze the sealing block 12 and the sealing rubber head 15 to seal the BGA solder ball 6 between the upper SiP3 and the lower SiP4 during the process of encapsulating the upper SiP3 and the lower SiP4, thereby improving the sealing effect of the connection between the upper SiP3 and the lower SiP4, and no longer needing to waterproof the BGA solder ball 6. At the same time, the coolant in the present invention can be replaced with other coolants. Compared with the special coolant used in immersion liquid cooling, the present invention can greatly reduce the cost of use and is convenient for popularization.

[0031] See also Figure 6 A sealing sheet 16 is installed on the top plate 13 and the bottom plate 14 , and the sealing sheet 16 is in contact with the sealing block 12 .

[0032] Specifically, the sealing rubber head 15 abuts against the connection between the upper SiP3 and the lower SiP4; when the cover 2 is installed, the cover 2 drives the sealing block 12 to be squeezed into the packaging box 1, so that the sealing block 12 drives the top plate 13 to seal the connection end between the upper SiP3 and the lower SiP4.

[0033] It should be noted that a sealing sheet 16 is installed on the top plate 13 and the bottom plate 14, and the sealing block 12 is connected to the top plate 13 and the bottom plate 14 through the sealing sheet 16. The sealing sheet 16 can provide a sealing effect for the sealing block 12. When the coolant passes through the liquid flow hole 17 and the liquid flow groove 18, the sealing sheet 16 can prevent the cooling liquid from flowing out from the inside of the packaging box 1.

[0034] Figure 7-Figure 11 The speed regulating assembly 5 is installed inside the top plate 13, and the speed regulating assembly 5 includes a flow regulating plate 51 and a slot 52. The flow regulating plate 51 is rotatably installed on the top plate 13, and the slot 52 is provided on the top plate 13, and the slot 52 is located on the flow regulating plate 51; A heat absorption cavity plate 53 is installed on the cover 2, and the heat absorption cavity plate 53 contacts the top of the upper SiP3. A connecting cavity tube 55 is installed on the heat absorption cavity plate 53, and the connecting cavity tube 55 is connected to the heat absorption cavity plate 53. An elastic diaphragm 56 is installed on the connecting cavity tube 55, and the connecting cavity tube 55 is inserted into the slot 52, and the elastic diaphragm 56 contacts the flow regulating plate 51.

[0035] It should be noted that, since the coolant first passes into the bottom plate 14 and dissipates heat to the lower SiP4, the coolant then enters the top plate 13 and dissipates heat to the upper SiP3. In fact, when the coolant passes through the bottom plate 14, the coolant will absorb the heat of the lower SiP4. When the coolant enters the top plate 13, the cooling effect of the coolant will be relatively reduced. Therefore, in actual use, the heat dissipation effect of the coolant on the upper SiP3 is not as good as that of the lower SiP4. The inconsistent cooling effect of the coolant on the upper SiP3 and the lower SiP4 causes the phenomenon of local temperature increase during the operation of the radio frequency microsystem, which in turn affects the operation of the system. Therefore, the present invention installs the speed regulating component 5 on the packaging box 1 and the cover 2. When the cover 2 is used to package the upper SiP3 and the lower SiP4, the connecting cavity tube 55 on the heat absorption cavity plate 53 is respectively inserted into the slot 52 on the top plate 13. When the packaging of the cover 2 is completed, the heat absorption cavity plate 53 at the bottom of the cover 2 abuts against the top of the upper SiP3.

[0036] When the upper SiP3 and the lower SiP4 are in operation, the heat of the upper SiP3 is transferred to the heat absorbing cavity plate 53, causing the gas inside the heat absorbing cavity plate 53 to expand, thereby driving the elastic diaphragm 56 to bulge. Fig.11 At this time, the elastic diaphragm 56 on the connecting cavity 55 drives the flow regulating plate 51 to rotate. At this time, when the coolant passes through the flow regulating plate 51, the passage diameter of the coolant is reduced. When the coolant flow rate remains unchanged, the speed of the coolant passing through the flow regulating plate 51 increases. Therefore, the cooling efficiency of the coolant on the upper SiP3 is relatively increased, so that the cooling efficiency of the coolant on the upper SiP3 and the lower SiP4 can be kept consistent as much as possible, so that the operating temperature is balanced, and the phenomenon of local temperature increase during the operation of the RF microsystem is avoided.

[0037] See also Figure 9-11 A plurality of micro chambers 54 are arranged inside the heat absorption cavity plate 53 , and two connecting cavity tubes 55 are respectively installed at both ends of each micro chamber 54 . The connecting cavity tubes 55 are all inserted into the slots 52 , and the elastic diaphragms 56 on the connecting cavity tubes 55 are all in contact with the flow regulating plate 51 .

[0038] It should be noted that there are several micro chambers 54 in the heat absorption cavity plate 53, and the several micro chambers 54 can divide the upper SiP3 into various areas. When the working temperatures of various areas of the upper SiP3 are different, each micro chamber 54 can adjust the angle of the corresponding flow regulating plate 51 through the connecting cavity tube 55 and the elastic diaphragm 56, so that when the coolant passes through the corresponding flow regulating plate 51, the flow velocity of the coolant changes accordingly, so that the working temperature of each area of ​​the upper SiP3 can be kept consistent, thereby improving the operating efficiency of the RF microsystem.

[0039] The implementation principle of the present invention is: During installation, the RF chip needs to be packaged inside the upper SiP3 and the lower SiP4 first, and then the upper SiP3 and the lower SiP4 are connected through the BGA solder ball 6, and then the upper SiP3 and the lower SiP4 are installed in the packaging box 1, so that the bottom of the lower SiP4 is sealed and connected to the bottom plate 14, and finally the cover 2 is installed on the packaging box 1. During this process, the cover 2 squeezes the sealing block 12, so that the sealing block 12 slides toward the inside of the packaging box 1. At this time, the sealing block 12 will drive the sealing rubber head 15 to seal the connection position between the upper SiP3 and the lower SiP4 and isolate the BGA solder ball 6. At this time, the coolant is injected into the bottom plate 14 through the liquid inlet 10. The coolant first passes through the lower SiP4 and dissipates the heat to the lower SiP4, and then the coolant enters the top plate 13 through the liquid flow hole 17 and the liquid flow groove 18, and then the coolant passes through the top plate 13 to dissipate the heat to the upper SiP3, and finally the coolant is output from the liquid outlet 11. The flow trajectory of the coolant is as shown in FIG. Fig.10 As shown by the middle arrow, during this process, the coolant can directly contact the lower SiP4 and the upper SiP3, ensuring the heat dissipation effect of the coolant on the lower SiP4 and the upper SiP3.

[0040] When the upper SiP3 is in operation, the heat of the upper SiP3 is transferred to the heat absorbing cavity plate 53, causing the gas inside the heat absorbing cavity plate 53 to expand, thereby driving the elastic diaphragm 56 to bulge. Fig.11 At this time, the elastic diaphragm 56 on the connecting cavity 55 drives the flow regulating plate 51 to rotate. At this time, when the coolant passes through the flow regulating plate 51, the passage diameter of the coolant is reduced. When the coolant flow rate remains unchanged, the speed of the coolant passing through the flow regulating plate 51 increases. Therefore, the cooling efficiency of the coolant on the upper SiP3 is relatively increased, so that the cooling efficiency of the coolant on the upper SiP3 and the lower SiP4 can be kept consistent as much as possible, so that the operating temperature is balanced, and the phenomenon of local temperature increase during the operation of the RF microsystem is avoided.

[0041] The above shows and describes the basic principles, main features and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments, and the above embodiments and descriptions are only for explaining the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, and these changes and improvements all fall within the scope of the present invention to be protected.

Claims

1. A heat dissipation structure for three-dimensional interconnection of radio frequency microsystems, characterized in that: It comprises a packaging box (1) and an upper SiP (3) and a lower SiP (4) installed inside the packaging box (1), wherein the upper SiP (3) and the lower SiP (4) are connected via a BGA solder ball (6), and a sealing cover (2) is installed on the packaging box (1); The packaging box (1) comprises a top plate (13) and a bottom plate (14); the top plate (13) and the bottom plate (14) are connected via a sealing rubber head (15); the sealing rubber head (15) is aligned with the connection between the upper SiP (3) and the lower SiP (4); a sealing block (12) is slidably installed between the top plate (13) and the bottom plate (14); the sealing block (12) contacts the sealing rubber head (15); The top plate (13) and the bottom plate (14) are respectively provided with a liquid outlet (11) and a liquid inlet (10); a liquid flow hole (17) is provided on the sealing block (12) away from the liquid inlet (10); a liquid flow groove (18) is provided on the top plate (13) and the bottom plate (14); and the liquid flow hole (17) and the liquid flow groove (18) are in communication.

2. The heat dissipation structure of a three-dimensional interconnected radio frequency microsystem according to claim 1, characterized in that: The upper SiP (3) and the lower SiP (4) are located inside the top plate (13) and the bottom plate (14) respectively, and the lower SiP (4) is sealed and connected to the bottom plate (14).

3. The heat dissipation structure of a three-dimensional interconnected radio frequency microsystem according to claim 1, characterized in that: A sealing sheet (16) is installed on the top plate (13) and the bottom plate (14), and the sealing sheet (16) is in contact with the sealing block (12).

4. The heat dissipation structure of a three-dimensional interconnected radio frequency microsystem according to claim 1, characterized in that: The top plate (13) has a speed regulating assembly (5) installed inside, the speed regulating assembly (5) comprising a flow regulating plate (51) and a slot (52), the flow regulating plate (51) is rotatably mounted on the top plate (13), the slot (52) is provided on the top plate (13), and the slot (52) is located on the flow regulating plate (51); A heat absorption cavity plate (53) is mounted on the cover (2), the heat absorption cavity plate (53) contacts the top of the upper SiP (3), a connecting cavity tube (55) is mounted on the heat absorption cavity plate (53), the connecting cavity tube (55) is connected to the heat absorption cavity plate (53), an elastic diaphragm (56) is mounted on the connecting cavity tube (55), the connecting cavity tube (55) is inserted into the slot (52), and the elastic diaphragm (56) contacts the flow regulating plate (51).

5. The heat dissipation structure of a three-dimensional interconnected radio frequency microsystem according to claim 4, characterized in that: A plurality of micro chambers (54) are arranged inside the heat absorption chamber plate (53), and two connecting chamber tubes (55) are respectively installed at both ends of each micro chamber (54). The connecting chamber tubes (55) are all inserted into the slots (52), and the elastic membranes (56) on the connecting chamber tubes (55) are all in contact with the flow regulating plate (51).

6. The heat dissipation structure of a three-dimensional interconnected radio frequency microsystem according to claim 1, characterized in that: The sealing rubber head (15) abuts against the connection between the upper SiP (3) and the lower SiP (4); when the cover (2) is installed, the cover (2) drives the sealing block (12) to be pressed into the interior of the packaging box (1), so that the sealing block (12) drives the top plate (13) to seal the connection end between the upper SiP (3) and the lower SiP (4).

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