Light-emitting chip assembly and laser packaging assembly

Abstract

The invention discloses a light-emitting chip assembly and a laser packaging assembly, and belongs to the technical field of photoelectricity. The light-emitting chip assembly is used for emitting laser; the light-emitting chip is provided with a first surface (M1) and a second surface (M2) which are connected, the first surface (M1) is used for being fixed with other parts through solder (1032), and laser is emitted from the second surface (M2); a target area (Q1), close to the second surface (M2), in the first surface (M1) is provided with a blocking structure (1011), and the arrangement can provide higher light-emitting chip preparation yield.

Description

Light-emitting chip components and laser packaging components

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to the Chinese patent application filed with the China Patent Office on September 30, 2022, with application number 202211210168.6 and invention name “Light-emitting chip and laser”, the entire contents of which are incorporated by reference into this application. Technical Field

[0003] The present application relates to the field of optoelectronic technology, and in particular to a light-emitting chip assembly and a laser packaging assembly. Background Art

[0004] With the development of optoelectronic technology, lasers are widely used, for example, as light sources for projection equipment.

[0005] In the related art, a laser may include a housing and a light-emitting chip located within the housing. The light-emitting chip emits laser light from a light-emitting surface, which is a side surface of the light-emitting chip. During the process of securing the laser, solder needs to be placed on the bottom of the light-emitting chip and melted to secure the chip. Because molten solder tends to flow along the objects it contacts, the related art may cause solder to overflow onto the light-emitting surface of the light-emitting chip. This can hinder the normal emission of the light-emitting chip, resulting in poor performance of the light-emitting chip and, in turn, a low yield rate for laser production.

[0006] Summary of the Invention

[0007] In one aspect, the present application provides a light-emitting chip assembly, wherein the light-emitting chip assembly is used to emit laser light;

[0008] The light emitting chip has a first surface and a second surface connected thereto, the first surface being used for fixing to other components via solder, and the laser being emitted from the second surface;

[0009] A target area of ​​the first surface close to the second surface has a blocking structure.

[0010] On the other hand, a laser package assembly is provided, comprising: a tube shell and a light-emitting chip assembly located in the tube shell, wherein the light-emitting chip assembly is the light-emitting chip assembly described above. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments of the present application. Obviously, the drawings introduced below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0012] FIG1 is a schematic diagram of the side structure of a light-emitting chip after mounting in the related art;

[0013] FIG2 is a schematic diagram of the front structure of the light-emitting chip after mounting in the related art;

[0014] FIG3A is a schematic structural diagram of a light-emitting chip assembly provided in an embodiment of the present application;

[0015] FIG3B is a schematic structural diagram of the light-emitting chip in FIG3A ;

[0016] FIG4 is a schematic structural diagram of another light-emitting chip provided in an embodiment of the present application;

[0017] FIG5 is a schematic structural diagram of another light-emitting chip provided in an embodiment of the present application;

[0018] FIG6 is a schematic structural diagram of another light-emitting chip provided in an embodiment of the present application;

[0019] FIG7 is a schematic structural diagram of a light-emitting chip provided in another embodiment of the present application;

[0020] FIG8 is a schematic structural diagram of another light-emitting chip provided in another embodiment of the present application;

[0021] FIG9 is a schematic structural diagram of yet another light-emitting chip provided in another embodiment of the present application;

[0022] FIG10 is a schematic structural diagram of another light-emitting chip provided in another embodiment of the present application;

[0023] FIG11 is a schematic structural diagram of a light-emitting chip provided in yet another embodiment of the present application;

[0024] FIG12 is a schematic structural diagram of another light-emitting chip provided in yet another embodiment of the present application;

[0025] FIG13 is a schematic structural diagram of another light-emitting chip provided in yet another embodiment of the present application;

[0026] FIG14 is a schematic structural diagram of another light-emitting chip provided in yet another embodiment of the present application;

[0027] FIG15 is a schematic structural diagram of a laser packaging assembly provided in an embodiment of the present application;

[0028] FIG16 is a schematic diagram of a partial structure of a laser packaging assembly provided in an embodiment of the present application;

[0029] FIG17 is a schematic cross-sectional view of another laser packaging assembly provided in an embodiment of the present application. DETAILED DESCRIPTION

[0030] In order to make the objectives, technical solutions and advantages of the embodiments of the present application clearer, the implementation methods of the present application will be further described in detail below with reference to the accompanying drawings.

[0031] With the development of optoelectronic technology, lasers have become widely used due to their excellent monochromaticity and high efficiency. For example, lasers are used in projection equipment to create projection images, ensuring excellent display quality. Laser light can be emitted by light-emitting chips. Currently, high requirements are placed on the light-emitting efficiency and reliability of these chips during use. The light-emitting chip is installed in a laser, which serves as the smallest unit for emitting laser light and is applicable in various scenarios. Semiconductor lasers are commonly used as light sources. Semiconductor lasers operate on an excitation principle, utilizing the transitions between energy bands of semiconductor materials (i.e., electrons) to generate light. The cleavage planes of the semiconductor crystal form two parallel reflective surfaces as reflectors, forming a resonant cavity. This allows light to oscillate and feedback, generating amplified light radiation and outputting laser light. The core light-emitting portion of a semiconductor laser is a PN junction die composed of p-type and n-type semiconductors. The active layer, also known as the active region, is located between the p-type and n-type semiconductors. Laser light is emitted from this layer. The active region is part of the light-emitting chip.

[0032] During the preparation of the laser, the light-emitting chip needs to be mounted with other components. Ensuring the reliability of the light-emitting chip during this preparation process is crucial to the reliability of the laser preparation. As shown in Figure 1, the heat sink 103 is mounted on the base plate 1021, and the light-emitting chip 101 is mounted on the side of the heat sink 103 away from the base plate 1021. The heat generated by the light-emitting chip 101 when emitting light can be conducted to the outside through the heat sink 103 to avoid damage to the light-emitting chip 101 due to the accumulation of heat. Since the laser has two directions of fast axis and slow axis, the light beam emitted from the active area is a three-dimensional cone as shown in Figure 1. The light-emitting chip 101 is welded to the heat sink 103 by gold-tin solder, such as by eutectic welding. However, due to differences in batches of gold-tin solder used in heat sinks, storage conditions, and process conditions, gas adsorption or moisture may occur at the soldering interface during eutectic soldering. This causes volume expansion during the heating process, forming gaps that push the solder to overflow. After the gold-tin melts, the solder overflows the heat sink. As the solder overflows, the outermost layer gradually cools due to the ambient temperature, causing the solder overflow to grow in size. In severe cases, it may overflow onto the light-emitting surface of the chip, thereby blocking the light-emitting surface and causing chip defects. As shown in the front view of the light-emitting chip in Figure 2, the overflow area 1031 partially blocks the light-emitting surface of the light-emitting chip 101, thereby affecting the light-emitting effect. This may also cause the assembled laser to be unable to function normally, resulting in a low yield rate for the entire laser.

[0033] In some related technologies, the light-emitting chip can be made to protrude outward relative to the heat sink, that is, the light-emitting end face of the light-emitting chip extends beyond the end face of the heat sink, so that the two are no longer in the same plane. This can also reduce the probability or range of solder blocking the light-emitting surface. However, if the protrusion is too long, the effective contact area between the light-emitting chip and the heat sink is reduced, and the effective heat dissipation area of ​​the light-emitting chip is reduced, which may cause heat accumulation to burn the light-emitting surface. In addition, in related technologies, the applicant has also attempted to reduce overflow and accumulation by thinning the gold-tin solder. However, thinning the solder thickness means less solder, which reduces the interface welding strength. In particular, the shear force in eutectic welding is reduced, which increases the probability of poor welding, and also reduces the yield rate of the entire light-emitting chip assembly, and thus the yield rate of the entire laser assembly.

[0034] The embodiments of the present application provide a light-emitting chip and a laser, which can ensure the light-emitting reliability of the light-emitting chip when it is mounted and fixed, and the laser in which the light-emitting chip is located has a high yield.

[0035] FIG3A is a schematic diagram of the structure of a light-emitting chip assembly provided in an embodiment of the present application, and FIG3B is a schematic diagram of the structure of the light-emitting chip in FIG3A . As shown in FIG3B , the light-emitting chip 101 can be roughly rectangular. The x-direction in FIG3A or FIG3B can be the length direction of the light-emitting chip 101, the y-direction can be the height direction of the light-emitting chip 101, the direction perpendicular to the paper can be the width direction of the light-emitting chip 101, and the x-direction can be perpendicular to the y-direction. For example, the width of the light-emitting chip 101 is 150 microns and the length is 1200 microns. The light-emitting chip 101 can have six surfaces, including a first surface M1 and a second surface M2 connected to each other. The first surface M1 can be perpendicular to the second surface M2.

[0036] The first surface M1 is used for fixing to other components, that is, the light-emitting chip 101 can be fixed to other components using the first surface M1. For example, solder can be provided between the first surface M1 and other components to fix the light-emitting chip 101 to the other components through the solder. For example, the solder can be gold-tin solder. The first surface M1 can be referred to as the bottom surface of the light-emitting chip 101, and the second surface M2 can be referred to as the side surface of the light-emitting chip 101. The light-emitting chip 101 is used to emit laser light, and the laser light can be emitted from the second surface M2. The second surface M2 can also be referred to as the light-emitting surface of the light-emitting chip 101.

[0037] As shown in Figures 3A and 3B, a target area Q1 of the first surface M1 near the second surface M2 has a blocking structure 1011. The blocking structure 1011 is used to restrict solder so that when molten solder is attached to the first surface M1, the solder is blocked from flowing along the first surface M1 toward the second surface M2, thereby preventing the second surface M2 from being covered by the solder and obstructing laser emission.

[0038] As shown in Figure 3B , the first surface M1 can be divided into a target area Q1 and a further area Q2, which is further away from the second surface M2 than the target area Q1. A vertical dashed line is used in Figure 3B to schematically distinguish the target area Q1 from the further area Q2. The area to the right of the vertical dashed line on the first surface M1 is the target area Q1, and the area to the left of the vertical dashed line is the further area Q2. In the embodiment of the present application, the further area Q2 on the first surface M1, excluding the target area Q1, is flat. This further area Q2 is used to place solder to secure the light-emitting chip 101 to other components via solder.

[0039] In the embodiment of the present application, the light emitting chip 101 may include a chip body and a blocking structure 1011 located on the chip body. The chip body may be in the shape of a rectangular parallelepiped, and the first surface M1 and the second surface M2 may be two surfaces of the chip body.

[0040] The light-emitting chip assembly shown in FIG. 3A includes the light-emitting chip 101 shown in FIG. 3B , wherein the light-emitting chip 101 is soldered to the heat sink 103 via a solder layer 1032 .

[0041] In summary, in the light-emitting chip provided in the embodiment of the present application, the laser is emitted from the second surface, and the second surface is also the light-emitting surface of the light-emitting chip. The first surface of the light-emitting chip used for fixing with other components is connected to the second surface, and the target area of ​​the first surface close to the second surface has a blocking structure. In this way, when the first surface of the light-emitting chip is fixed to other components by solder, even if the solder flows after melting, the flowing solder will be blocked by the blocking structure in the first surface, thereby reducing or even preventing the solder from overflowing to the second surface. Therefore, the risk of the light-emitting surface of the light-emitting chip being attached by solder can be reduced, ensuring that the light-emitting effect of the light-emitting chip is better and the yield is higher, and correspondingly, the yield of the laser in which the light-emitting chip is located can be ensured to be higher. For simplicity, the structural improvements of the light-emitting chip 101 are introduced in the following multiple embodiments, and the heat sink structure and the solder structure layer between the heat sink and the light-emitting chip are not illustrated.

[0042] The blocking structure 1011 in the light-emitting chip 101 is described below with reference to the accompanying drawings.

[0043] FIG4 is a schematic structural diagram of another light-emitting chip provided in an embodiment of the present application. FIG4 may be a bottom view of the light-emitting chip 101 shown in FIG3A and FIG3B . As shown in FIG4 , in the direction parallel to the boundary line between the first surface M1 and the second surface M2 (such as the z direction), the length of the blocking structure 1011 is equal to the length of the light-emitting chip 101. This direction is also a direction that is parallel to both the first plane M1 and the second plane M2. For example, this direction is the z direction in FIG4 , which is also the direction perpendicular to the paper in FIG3A and FIG3B . The length of the light-emitting chip 101 in the z direction is also the width of the light-emitting chip 101, which is roughly in the shape of a rectangular parallelepiped. In this way, the blocking structure 1011 can block all solder flowing from various positions in the first surface M1 to the second surface M2, ensuring a better blocking effect.

[0044] In one specific implementation, Figure 5 is a schematic diagram of the structure of another light-emitting chip provided in an embodiment of the present application. Figure 5 may also be a bottom view of the light-emitting chip 101 shown in Figures 3A and 3B . As shown in Figure 5 , the length of the blocking structure 1011 in the z-direction may also be less than the length of the light-emitting chip 101. This can block solder at least partially, reducing the risk of solder adhering to the second surface M2 compared to related art.

[0045] In the embodiment of the present application, the blocking structure 1011 in the light-emitting chip 101 can be a boss protruding from the target area Q1 of the first surface M1. The height of the boss can range from 20 microns to 30 microns, such as the height of the boss is 25 microns. When the blocking structure 1011 is raised relative to the first surface M1, the blocking structure 1011 can be in the shape of a prism. Such as a triangular prism, a square prism, a pentagonal prism or a prism of other shapes. Accordingly, the bottom surface of the blocking structure 1011 can be a triangle, a quadrilateral (such as a trapezoid, a rectangle and a parallelogram, etc.), a pentagon or other shapes. The bottom surface of the blocking structure 1011 is perpendicular to the first surface M1 and perpendicular to the second surface M2. The shape of the bottom surface is also the shape of the cross section of the blocking structure 1011 perpendicular to the first surface M1 and perpendicular to the second surface M2 (hereinafter referred to as the target cross section).

[0046] Figures 3A and 3B take the example of a rectangular target cross-section of the blocking structure 1011 when the blocking structure 1011 is a boss. The blocking structure 1011 may be in the shape of a quadrangular prism with a rectangular bottom surface. Figure 6 is a schematic structural diagram of a light-emitting chip provided in another embodiment of the present application, and Figure 7 is a schematic structural diagram of another light-emitting chip provided in another embodiment of the present application. Figures 4 and 5 may also be bottom views of the light-emitting chip 101 shown in Figures 6 or 7. As shown in Figure 6, the target cross-section of the blocking structure 1011 may also be trapezoidal, with the blocking structure 1011 being in the shape of a quadrangular prism with a trapezoidal bottom surface; as shown in Figure 7, the target cross-section of the blocking structure 1011 may also be triangular, with the blocking structure 1011 being in the shape of a triangular prism.

[0047] In one specific implementation, the blocking structure 1011 may also be a groove. The depth of the groove may range from 20 microns to 30 microns, such as a depth of 25 microns. FIG8 is a schematic structural diagram of another light-emitting chip provided in an embodiment of the present application, and FIG4 and FIG5 may also be bottom views of the light-emitting chip 101 shown in FIG8 . As shown in FIG8 , the blocking structure 1011 may also be a recessed groove in the target area Q1. In this way, when solder is attached to the first surface M1, even if the solder flows toward the second surface M2, it can be accommodated by the blocking structure 1011 when it flows to the blocking structure 1011, thereby reducing the amount of solder that continues to flow to the second surface M2; even excess solder can be completely accommodated by the blocking structure 1011, so that no more solder flows toward the second surface M2 after the blocking structure 1011.

[0048] FIG8 takes the example of a blocking structure 1011 being a groove and the target cross-section of the blocking structure 1011 being a semicircle. In one specific implementation, when the blocking structure 1011 is a groove, its target cross-section may also be a triangle, a quadrilateral (such as a trapezoid, a rectangle, and a parallelogram), a pentagon, or other shapes. FIG9 is a schematic structural diagram of another light-emitting chip provided in another embodiment of the present application, and FIG10 is a schematic structural diagram of another light-emitting chip provided in another embodiment of the present application. FIG4 and FIG5 may also be bottom views of the light-emitting chip 101 shown in FIG9 or FIG10. As shown in FIG9, the target cross-section of the blocking structure 1011 may also be a rectangle; as shown in FIG10, the target cross-section of the blocking structure 1011 may also be a triangle.

[0049] The above embodiments of the present application are all introduced as an example in which the blocking structure 1011 is in the shape of a strip, and its length direction is parallel to the z direction, that is, it is parallel to both the first surface M1 and the second surface M2. In one specific implementation, the blocking structure 1011 can also extend in a curved manner on the first surface M1. For example, Figure 11 is a structural schematic diagram of a light-emitting chip provided in another embodiment of the present application. Figure 11 can be a bottom view of any light-emitting chip 101 in Figures 3A, 3B, and Figures 6 to 10. As shown in Figure 11, the blocking structure 1011 can be wavy. In one specific implementation, the blocking structure 1011 can also extend in an arbitrary shape, such as a serrated shape, or can be bent randomly without any rules, which is not limited in the embodiments of the present application.

[0050] The above embodiments of the present application are all illustrated by taking the example of a light-emitting chip 101 including only one blocking structure 1011. In one specific implementation, the light-emitting chip 101 may also include multiple blocking structures 1011 spaced apart from each other. For example, FIG12 is a schematic structural diagram of another light-emitting chip provided in yet another embodiment of the present application, and FIG13 is a schematic structural diagram of yet another light-emitting chip provided in yet another embodiment of the present application. FIG13 may be a bottom view of the light-emitting chip 101 shown in FIG12 . As shown in FIG12 and FIG13 , the multiple blocking structures 1011 in the light-emitting chip 101 may be arranged sequentially along a direction close to the second surface M2 (e.g., the x-direction). The length of each blocking structure 1011 in the z-direction may be equal to the length of the light-emitting chip 101 in the z-direction, that is, the width of the light-emitting chip 101. In this way, even if there is a large amount of solder on the first surface M1 and the solder flows over the first blocking structure 1011, the second blocking structure 1011 is still there to block the solder.

[0051] Figures 12 and 13 illustrate an example in which the number of blocking structures 1011 is two, and each blocking structure 1011 is in the shape of a quadrangular prism with a rectangular bottom surface. In one embodiment, the number of blocking structures 1011 can be three or more, and the blocking structures 1011 can be any of the aforementioned shapes. The shapes of the different blocking structures 1011 in the multiple blocking structures 1011 can also be different. For example, one of the multiple blocking structures 1011 can be a boss and another a groove; or one can be in the shape of a quadrangular prism with a rectangular bottom surface and another can be in the shape of a quadrangular prism with a trapezoidal bottom surface.

[0052] In the embodiments of the present application, there is no limitation on the width of the blocking structure 1011. The width of the blocking structure 1011 is the distance between the ends of the target cross section of the blocking structure 1011 in the x-direction. The width of the blocking structure 1011 can range from 5 microns to 35 microns, such as 10 microns, 20 microns, or 30 microns.

[0053] In the embodiment of the present application, the distance between the blocking structure 1011 and the second surface M2 may range from 10 microns to 40 microns. The distance between the surface of the blocking structure 1011 closer to the second surface M2 and the second surface M2 may be any value within this distance range. In one specific implementation, the maximum value within this distance range may be the distance between the surface of the blocking structure 1011 farther from the second surface M2 and the second surface M2.

[0054] For example, the distance between the blocking structure 1011 and the second surface M2 can range from 10 microns to 20 microns. For example, the distance between the side of the blocking structure 1011 closer to the second surface M2 and the second surface M2 is 10 microns, and the distance between the side of the blocking structure 1011 farther from the second surface M2 and the second surface M2 is 20 microns, and the width of the blocking structure 1011 is 10 microns. For another example, the distance between the side of the blocking structure 1011 closer to the second surface M2 and the second surface M2 is 15 microns, and the distance between the side of the blocking structure 1011 farther from the second surface M2 and the second surface M2 is 25 microns, and the width of the blocking structure 1011 is 10 microns. For another example, the distance between the side of the blocking structure 1011 closer to the second surface M2 and the second surface M2 is 20 microns, and the distance between the side of the blocking structure 1011 farther from the second surface M2 and the second surface M2 is 50 microns, and the width of the blocking structure 1011 is 30 microns.

[0055] As another example, the distance between the blocking structure 1011 and the second surface M2 ranges from 20 microns to 40 microns. For example, the distance between the side of the blocking structure 1011 closer to the second surface M2 and the second surface M2 is 20 microns, and the distance between the side of the blocking structure 1011 farther from the second surface M2 and the second surface M2 is 40 microns, and the width of the blocking structure 1011 is 20 microns. For another example, the distance between the side of the blocking structure 1011 closer to the second surface M2 and the second surface M2 is 25 microns, and the distance between the side of the blocking structure 1011 farther from the second surface M2 and the second surface M2 is 35 microns, and the width of the blocking structure 1011 is 10 microns.

[0056] It should be noted that, for light-emitting chips 101 with different structures or materials, the location of the blocking structure 1011 may also be different, such as the distance between the blocking structure 1011 and the second surface M2 may be different.

[0057] The specific film layer structure of the light emitting chip 101 is introduced below with reference to the accompanying drawings, and the film layer structure in the chip body of the light emitting chip 101 is introduced in detail.

[0058] FIG14 is a schematic diagram of the structure of another light-emitting chip provided in another embodiment of the present application. As shown in FIG14 , the light-emitting chip 101 may include a first electrode 1012, a substrate 1013, an epitaxial layer 1014, and a second electrode 1015 stacked in sequence. FIG14 does not illustrate the blocking structure 1011. The epitaxial layer 1014 is a film layer generated on the substrate 1013. The combined structure of the substrate 1013 and the epitaxial layer 1014 can be referred to as an epitaxial wafer. In one specific implementation, the epitaxial wafer and the electrode in the light-emitting chip 101 can be prepared at one time by the same manufacturer, or can be prepared separately by different manufacturers. For example, the prepared epitaxial wafer can be directly obtained, and then the first electrode and the second electrode can be formed thereon to obtain the light-emitting chip 101.

[0059] The first electrode 1012 and the second electrode 1015 can be connected to the negative and positive poles of a power supply, respectively. Thus, the first electrode 1012 and the second electrode 1015 can apply a voltage to the epitaxial wafer to cause laser light to be emitted from the side of the epitaxial wafer. For example, the first electrode 1012 is connected to the negative pole of the power supply, and the second electrode 1015 is connected to the positive pole of the power supply. In this way, the second electrode 1015 can inject current into the epitaxial wafer to stimulate the epitaxial wafer to emit laser light.

[0060] The epitaxial layer 1014 may include an electron-type semiconductor layer 1014a, an active layer 1014c, and a hole-type semiconductor layer 1014e, stacked sequentially in a direction away from the substrate 1013. An electron-type semiconductor is also known as an N-type semiconductor, and a hole-type semiconductor is also known as a P-type semiconductor. Accordingly, the first electrode 1012 may be referred to as an N-side electrode, and the second electrode 1015 may be referred to as a P-side electrode. Holes in the N-type semiconductor layer and electrons in the P-type semiconductor are both injected into the active layer 1014c, creating a population inversion in the active layer 1014c. The electrons and holes, as charge carriers, may recombine in the active layer 1014c and generate photons. A resonant cavity is formed in the active layer 1014c, where photons can oscillate and amplify. For the active layer 1014c to emit laser light continuously and stably, photons must form stable oscillations within the resonant cavity. The gain within the active layer 1014c must be sufficiently large to compensate for the optical losses caused by the resonant cavity and the losses due to laser light output from the cavity facets, thereby increasing the optical field within the cavity. Since injecting current into the epitaxial wafer can increase the degree of population inversion in the active layer 1014c, and a higher degree of population inversion increases the gain of the active layer 1014c, a sufficiently strong current injection is required. This current must meet certain threshold conditions to ensure that light with a stable wavelength oscillates and is amplified within the resonant cavity, ultimately generating continuous laser output.

[0061] Continuing with FIG14 , the light-emitting chip 101 may further include a first confinement layer 1014b and a second confinement layer 1014d. The first confinement layer 1014b is located between the electron-type semiconductor layer 1014a and the active layer 1014c, and the second confinement layer 1014d is located between the active layer 1014c and the hole-type semiconductor layer 1014e. The active layer 1014c can restrict the movement of carriers. The first confinement layer 1014b and the second confinement layer 1014d can restrict the transmission of laser light emitted from the active layer 1014c, thereby ensuring that the laser light is emitted only from the active layer 1014c.

[0062] Continuing with reference to FIG. 14 , the light-emitting chip 101 may further include an insulating layer 1016, which is located between the hole-type semiconductor layer 1014e and the second electrode 1015. The light-emitting chip 101 in the embodiment of the present application may be a ridge-type light-emitting chip. The hole-type semiconductor layer 1014e in the light-emitting chip 101 may be ridge-shaped, that is, the hole-type semiconductor layer 1014e has a strip-shaped protrusion on the side away from the substrate 1013. In one specific implementation, the width of the strip-shaped protrusion may range from 30 microns to 40 microns. The insulating layer 1016 covers the area of ​​the hole-type semiconductor layer 1014e other than the surface of the strip-shaped protrusion away from the substrate 1013. The second electrode 1015 covers the insulating layer 1016 and the hole-type semiconductor layer 1014e. Only the surface of the hole-type semiconductor layer 1014e away from the substrate 1013 is in contact with the second electrode 1015. In this way, the second electrode 1015 only injects current into the epitaxial wafer through the surface of the strip-shaped protrusion away from the substrate 1013, and the current can be vertically injected into the area covered by the positive projection of the strip-shaped protrusion in the active layer 1014c, thereby causing the area in the active layer 1014c to emit laser, which is the actual light-emitting area in the light-emitting chip 101.

[0063] When current is injected into the light-emitting chip 101, all the film layers are turned on. After current is injected into one area of ​​a film layer, the current will diffuse from that area to other areas of the film layer. Therefore, after the current is injected into the light-emitting chip 101 along the direction of the stacking of the film layers, it is not only transmitted vertically, but also diffuses laterally to both sides, resulting in a low current density reaching the light-emitting area in the active layer 1014c; and the carriers in the light-emitting area in the active layer 1014c will also diffuse to both sides and be lost. In the embodiment of the present application, grooves can also be provided on both sides of the strip-shaped protrusion in the light-emitting chip 101 (the grooves are not shown in the figure), and the depth of the grooves can ensure that the grooves pass through the active layer 1014c. The grooves can make the structures on both sides no longer conductive, thereby limiting the lateral diffusion of current and limiting the lateral diffusion of carriers in the active layer 1014c, which can improve the current density in the light-emitting area and the photoelectric conversion efficiency.

[0064] In one specific implementation, the first electrode 1012 may be made of gold-germanium-nickel (also known as Au-Ge-Ni), which is a multilayer metal structure comprising sequentially stacked gold, germanium, and nickel layers. The second electrode 1015 may be made of titanium-platinum-gold, also a multilayer metal structure comprising sequentially stacked titanium, platinum, and gold layers. The substrate 1013 may be made of gallium nitride or gallium arsenide. The electronic semiconductor layer 1014a may be made of n-type doped aluminum gallium nitride, the first confinement layer 1014b may be made of n-type doped indium gallium nitride (n-InGaN), and the second confinement layer 1014d may be made of undoped indium gallium nitride (InGaN). The active layer 1014c may be an indium gallium nitride (InGaN) multiple quantum well (MQW) structure. The hole-type semiconductor layer 1014e may include a p-type doped aluminum gallium nitride (p-AlGaN) electron-blocking layer (EBL) and a p-type doped aluminum gallium nitride (p-AlGaN) / gallium nitride (GaN) strain layer (SL). Specifically, the strain layer may be made of at least one of p-AlGaN and GaN. It should be noted that the materials of the various film layers in the light-emitting chip 101 may also be replaced with other materials that meet the requirements of the film layers, and this application does not impose any restrictions on this.

[0065] In one embodiment, when the material of the substrate 1013 in the light-emitting chip 101 is different, the location of the blocking structure 1011 may also vary. For example, for a light-emitting chip 101 whose substrate 1013 is made of gallium nitride, the distance between the blocking structure 1011 and the second surface M2 may range from 10 microns to 20 microns. For a light-emitting chip 101 whose substrate 1013 is made of gallium arsenide, the distance between the blocking structure 1011 and the second surface M2 may range from 20 microns to 40 microns.

[0066] In the embodiment of the present application, the light-emitting chip 101 can be fixed using flip-chip bonding technology. The first surface M1 of the light-emitting chip 101 is the surface of the second electrode 1015 that is away from the first electrode 1012. The second electrode 1015 is used for fixing to other components, and the blocking structure 1011 is located on the second electrode 1015. The second electrode 1015 is close to the actual light-emitting area of ​​the light-emitting chip 101. The light-emitting area generates a lot of heat when emitting laser light. Fixing the side of the second electrode 1015 to other components can facilitate faster heat transfer to these other components for dissipation.

[0067] During the preparation of the light-emitting chip 101, a substrate 1013 can be provided. The substrate can have the same dimensions as the final light-emitting chip, for example, a rectangular parallelepiped with a length of 1200 microns and a width of 150 microns. Subsequently, an electron-type semiconductor layer 1014a, a first confinement layer 1014b, an active layer 1014c, a second confinement layer 1014d, and a hole-type semiconductor layer can be epitaxially grown in sequence on one side of the substrate 1013. In one embodiment, since the center wavelength of the laser light emitted by the light-emitting chip 101 is related to the material of the film layers in the light-emitting chip 101, the center wavelength of the laser light emitted by the light-emitting chip 101 can be determined before preparing the light-emitting chip 101, and the material of each film layer in the light-emitting chip 101 can be determined based on the center wavelength. In one embodiment, an epitaxial wafer including the substrate 1013, the electron-type semiconductor layer 1014a, the first confinement layer 1014b, the active layer 1014c, the second confinement layer 1014d, and the hole-type semiconductor layer can also be directly obtained.

[0068] The hole-type semiconductor layer can then be patterned to form a hole-type semiconductor layer 1014e having strip-shaped protrusions. Next, an insulating material (e.g., silicon oxide) layer can be formed on the hole-type semiconductor layer 1014e, for example, by depositing a 500 μm thick silicon oxide layer using plasma-enhanced chemical vapor deposition. The insulating material layer can then be patterned to form an insulating layer 1016 covering the areas of the hole-type semiconductor layer 1014e where the strip-shaped protrusions are located away from the surface of the substrate 1013.

[0069] Next, 10-micron-wide trenches can be photoetched 10 microns on either side of the strip-shaped protrusions, extending through the active layer 1013c. For example, the insulating layer at the trench locations can be removed by wet etching, followed by resist removal and cleaning. Then, the hole-type semiconductor layer 1014e, the second confinement layer 1014d, and the active layer 1014c can be etched using inductively coupled plasma (ICP) to form trenches that penetrate the hole-type semiconductor layer 1014e, the second confinement layer 1014d, and the active layer 1014c. The second electrode 1015 is then formed on the side of the insulating layer 1016 facing away from the substrate 1013, and the first electrode 1012 is formed on the side of the substrate 1013 facing away from the second electrode 1015.

[0070] Then, a protruding barrier structure 1011 can be formed on the side of the second electrode 1015 away from the first electrode 1012 by magnetron sputtering, or a recessed barrier structure 1011 can be formed by etching. In this way, the preparation of the light emitting chip 101 is completed.

[0071] In summary, in the light-emitting chip provided in the embodiment of the present application, the laser is emitted from the second surface, and the second surface is also the light-emitting surface of the light-emitting chip. The first surface of the light-emitting chip used for fixing with other components is connected to the second surface, and the target area of ​​the first surface close to the second surface has a blocking structure. In this way, when the first surface of the light-emitting chip is fixed to other components by solder, even if the solder flows after melting, the flowing solder will be blocked by the blocking structure in the first surface, thereby reducing or even preventing the solder from overflowing to the second surface. Therefore, the risk of the light-emitting surface of the light-emitting chip being attached by solder can be reduced, ensuring that the light-emitting effect of the light-emitting chip is better and the yield is higher, and correspondingly, the yield of the laser where the light-emitting chip is located can be ensured to be higher.

[0072] Figure 15 is a schematic diagram of the structure of a laser package assembly provided in an embodiment of the present application, and Figure 16 is a schematic diagram of a partial structure of a laser package assembly provided in an embodiment of the present application. Figure 15 may be a schematic diagram of the section a-a' in Figure 16. As shown in Figures 15 and 16, the laser package assembly 10 may include: a tube shell 102 and a light-emitting chip 101 located in the tube shell 102, and the light-emitting chip 101 is any of the light-emitting chips 101 mentioned above. In the embodiment of the present application, the laser package assembly 10 includes a plurality of light-emitting chips 101, and the plurality of light-emitting chips 101 can be arranged in an array in the tube shell 102. The laser may also include a plurality of heat sinks 103, a plurality of reflective prisms 104, a light-transmitting sealing layer 105, a plurality of collimating lenses 106, and a plurality of conductive pins 107. The plurality of collimating lenses 106 can be integrally formed.

[0073] The housing 102 has an opening and includes a bottom plate 1021 and sidewalls 1022. The bottom plate of the housing 102 faces the opening, while the sidewalls of the housing 102 enclose the opening. The multiple heat sinks 103 and the multiple reflective prisms 104 are mounted on the bottom plate 1021. The light-transmitting sealing layer 105 and the collimating lens 106 are sequentially fixed to the opening of the housing 102 in a direction away from the bottom plate 1021. The multiple conductive pins 107 extend through the sidewalls 1022 of the housing 102 and are fixed thereto. Each row of light-emitting chips 101 can be connected in series. Two light-emitting chips 101 at the edge of each row of light-emitting chips 101 are respectively connected to two conductive pins 107 on the sidewalls. The two conductive pins 107 are respectively fixed to opposite sides of the sidewalls 1022.

[0074] Each light-emitting chip 101 corresponds to a heat sink 103, a reflective prism 104 and a collimating lens 106. Each light-emitting chip 101 is mounted on the side of the corresponding heat sink 103 away from the bottom plate of the tube shell 102. The heat sink 103 is used to assist the corresponding light-emitting chip 101 in heat dissipation. The material of the heat sink 103 may include ceramic. The reflective surface of the reflective prism 104 corresponding to each light-emitting chip 101 is opposite to the light-emitting surface (that is, the second surface M2) of the light-emitting chip 101. The laser emitted by each light-emitting chip 101 can be directed toward the reflective surface of the corresponding reflective prism 104. After being reflected on the reflective prism 104, the laser passes through the light-transmitting sealing layer 105 and is directed toward the collimating lens 106 corresponding to the light-emitting chip 101 in the collimating lens 106. Then, the laser can be collimated by the collimating lens 106 and emitted, so that the light-emitting of the laser package component 10 can be achieved.

[0075] In one specific implementation, the material of the tube shell 102 can include metal or ceramic. When the material of the sidewall 1022 of the tube shell 102 includes ceramic, the light-transmitting sealing layer 105 can be directly fixed to the sidewall 1022 of the tube shell 102. When the material of the sidewall 1022 of the tube shell 102 includes metal, as shown in Figure 15, the laser package assembly 10 can also include a sealing frame 108. The outer edge area of ​​the sealing frame 108 is fixed to the surface of the sidewall 1022 away from the base plate 1021, and the inner edge area of ​​the sealing frame 108 is fixed to the edge of the light-transmitting sealing layer 105.

[0076] In the laser package assembly 10, the heat sink 103 can be any of the other components described above with respect to the light-emitting chip 101. The surface of the light-emitting chip 101 proximal to the heat sink 103 can be the first surface M1 of the light-emitting chip 101. The light-emitting chip 101 can be secured to the side of the heat sink 103 facing away from the base plate 1011 via solder. Specifically, a further region Q2 of the first surface M1 of the light-emitting chip 101 is secured to the heat sink 103 via solder, with the orthographic projection of the further region Q2 onto the base plate 1021 located within the orthographic projection of the heat sink 103 onto the base plate 1021.

[0077] Continuing with FIG15 , a portion of the structure of the light-emitting chip 101 extends out of the heat sink 103, and the orthographic projection of this portion of the structure on the base plate 1021 is outside the orthographic projection of the heat sink 103 on the base plate 1021. This portion of the structure may be the portion where the blocking structure 1011 is located. For example, a target area Q1 on the first surface M1 of the light-emitting chip 101 where the blocking structure 1011 is provided extends out of the heat sink 103, and the orthographic projection of the target area Q1 on the base plate 1021 is outside the orthographic projection of the heat sink 103 on the base plate 1021.

[0078] Since the laser emitted by the light-emitting chip 101 has a divergence angle, the light-emitting chip 101 extending outside the heat sink 103 can make the distance between the light-emitting chip 101 and the reflective prism 104 closer, thereby ensuring that more light emitted by the light-emitting chip 101 is directed toward the reflective prism 104, avoiding the waste of light caused by the laser emitted by the light-emitting chip 101 being directed toward the base plate 1021, so that the laser brightness emitted by the laser package component 10 can be higher.

[0079] Figure 17 is a schematic diagram of the cross-sectional structure of another laser packaging assembly provided by the present application. Referring to Figure 17, unlike the laser packaging assembly shown in Figure 15, a laser packaging assembly provided in an embodiment of the present application may include multiple packaging parts, each packaging part is surrounded by a base plate 1021, a side wall 1022, and a light-transmitting sealing layer 105, and a plurality of collimating lenses 106 are also provided on the outside of the sealed light-transmitting layer. At least one group of laser chips is correspondingly provided in each packaging part 1. Each group of laser chips includes a light-emitting chip 101 and a heat sink 103, wherein the light beam emitted by the light-emitting chip 101 is emitted outward in a direction away from the base plate 1021 through a reflecting prism 104, and passes through the light-transmitting sealing layer 105 and a plurality of collimating lenses 106 in sequence to form an outgoing light source beam.

[0080] In this example, the tube shell sidewall 1022 can be made of ceramic material, and the light-transmitting sealing layer 105 can be made of sapphire glass. The light-transmitting sealing layer 105 is welded to the ceramic sidewall 1022, eliminating the need for a supporting frame or other transition structure, simplifying the structure of each packaging part and reducing its size.

[0081] Furthermore, in some embodiments, the tube shell bottom plate 1021 may be made of oxygen-free copper, and the tube shell sidewall 1022 may be made of ceramic, and the sidewall 1022 and the bottom plate 1021 may be fixed by a brazing process.

[0082] It should be noted that this example does not limit the number of packaging parts, which can be two, three, four, or five. For example, as shown in Figure 17, when the number of groups of laser light-emitting chips 101 is two, the number of packaging parts is two, and the multiple collimating lenses 106 can be integrally formed, and the corresponding number is also two. Alternatively, as shown in the figure, when the number of groups of laser chips is three, the number of packaging parts is three, and the number of collimating lens groups is three.

[0083] In the laser package assembly 10 provided in some embodiments, multiple groups of laser chips are first respectively arranged in the inner cavity of multiple packaging parts, and then the corresponding collimating lens group is used to collimate each group of excitation light chips. In this way, it is only necessary to align the sub-collimating lens group corresponding to each group of laser chips. In this way, even if there is an error in the mounting position of a certain group of laser chips, it will not affect the collimation effect of other groups of laser chips. Moreover, since multiple groups of laser chips are respectively arranged in the inner cavity of multiple packaging parts, the number of laser chips in each packaging part is relatively small. In this way, each group of collimating lenses corresponds to a smaller number of laser chips, so that the alignment effect between each collimating lens in the collimating lens group and the corresponding laser chip is better, thereby ensuring that the laser emitted by each laser chip can be more directed to the corresponding collimating lens, and then ensuring that the collimating lens assembly better collimates the laser emitted by each laser chip, so as to improve the collimation degree of the laser emitted by the laser package assembly 10.

[0084] In this example, the difference from the laser package assembly provided in FIG15 is that a plurality of independent packaging parts are provided in the laser package assembly 10, and the laser chip is provided in each packaging part. This is equivalent to modularizing the laser package assembly 10, and each packaging part is equivalent to a small laser. This allows for flexible structural changes to the laser package assembly 10, and the structure of the laser package assembly 10 can be flexibly adjusted in different application scenarios, thereby improving the flexibility of the laser package assembly 10.

[0085] In some embodiments, each packaging part in the laser packaging assembly 10 is in a square ring structure, and the orthographic projection of each packaging part is a square ring or a quasi-square ring.

[0086] In some embodiments, at least one group of light-emitting chips in the plurality of groups of laser chips includes at least two types of laser chips, and the main wavelengths of laser light emitted by the two types of light-emitting chips are different.

[0087] Similarly, in the laser package components illustrated in FIG. 15 and FIG. 16 , light-emitting chips of different colors or wavelengths may be arranged in rows, or two light-emitting chips of different colors or wavelengths may be arranged in one row.

[0088] In summary, in the laser provided by the embodiment of the present application, the portion of the light-emitting chip extending from the heat sink has a blocking structure. When the light-emitting chip is fixed to the heat sink, even if the solder between the light-emitting chip and the heat sink melts and flows, the flowing solder will be blocked by the blocking structure, thereby reducing or even preventing the solder from overflowing to the light-emitting surface of the light-emitting chip. Therefore, the risk of the light-emitting surface of the light-emitting chip being attached by solder can be reduced, ensuring that the light-emitting chip has a better light-emitting effect and a higher yield, and correspondingly, the laser yield can be guaranteed to be higher. In addition, the reliability of the laser packaging component using the above-mentioned laser structure is also higher.

[0089] In this application, the terms "at least one of A and B" and "A and / or B" are merely a description of the association relationship of associated objects, indicating that there can be three kinds of relationships, namely, A exists alone, A and B exist at the same time, and B exists alone. The term "at least one of A, B, and C" indicates that there can be seven kinds of relationships, which can represent seven situations: A exists alone, B exists alone, C exists alone, A and B exist at the same time, A and C exist at the same time, C and B exist at the same time, and A, B, and C exist at the same time. In the embodiments of the present application, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance. The term "at least one" refers to one or more, and the term "multiple" refers to two or more, unless otherwise expressly defined.

[0090] The words "include" and "including" mentioned throughout the specification and claims are open-ended terms and should be interpreted as "including but not limited to". "Approximately" means that within an acceptable error range, those skilled in the art can solve the technical problem and basically achieve the technical effect. Certain words are used in the specification and claims to refer to specific components. Those skilled in the art should understand that manufacturers may use different terms to refer to the same component. This specification and claims do not use differences in name as a way to distinguish components, but rather use differences in the functions of the components as the criterion for distinction.

[0091] The above description is merely an optional embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present application shall be included in the scope of protection of the present application.

Claims

1. A light-emitting chip component, characterized in that: The heat sink and the light emitting chip are used to emit laser light. The light emitting chip is welded to one side surface of the heat sink, and the other side surface of the heat sink is connected to the heat conductive base; The light emitting chip has a first surface and a second surface connected thereto, the first surface being used for fixing to other components via solder, and the laser being emitted from the second surface; A target area of ​​the first surface close to the second surface has a blocking structure.

2. The light-emitting chip assembly according to claim 1, characterized in that: In a direction parallel to a boundary line between the first surface and the second surface, a length of the blocking structure is equal to a length of the light-emitting chip.

3. The light-emitting chip assembly according to claim 1 or 2, characterized in that: The blocking structure includes a protrusion or a groove.

4. The light-emitting chip assembly according to claim 3, characterized in that: The cross section of the boss perpendicular to the first surface and the second surface is trapezoidal, rectangular or triangular; and / or the height of the boss is in the range of 20 microns to 30 microns; The cross section of the groove perpendicular to the first surface and the second surface is semicircular, trapezoidal, rectangular or triangular; and / or the depth of the groove is in the range of 20 microns to 30 microns.

5. The light-emitting chip assembly according to claim 1 or 2, characterized in that: The distance between the blocking structure and the second surface ranges from 10 micrometers to 40 micrometers.

6. The light emitting chip assembly according to claim 5, characterized in that: The light-emitting chip comprises: a first electrode, a substrate, an epitaxial layer and a second electrode stacked in sequence; The material of the substrate includes gallium nitride, and the distance between the blocking structure and the second surface ranges from 10 microns to 20 microns; or the material of the substrate includes gallium arsenide, and the distance between the blocking structure and the second surface ranges from 20 microns to 40 microns.

7. The light-emitting chip assembly according to claim 6, characterized in that: The first electrode is an N-side electrode, the second electrode is a P-side electrode, and the blocking structure is formed on a side of the second electrode away from the first electrode.

8. The light-emitting chip assembly according to claim 1 or 2, characterized in that: The target area has a plurality of blocking structures, and the plurality of blocking structures are arranged in sequence along a direction close to the second surface.

9. The light-emitting chip assembly according to claim 1 or 2, characterized in that: The light emitting chip comprises: a first electrode, a substrate, an electron-type semiconductor layer, an active layer, a hole-type semiconductor layer, and a second electrode stacked in sequence, wherein the first surface is a surface of the second electrode away from the first electrode.

10. The light emitting chip assembly according to claim 9, characterized in that: The second electrode is a P-surface electrode, and a protruding barrier structure is formed on a side of the second electrode away from the first electrode by magnetron sputtering, or a recessed barrier structure is formed by etching.

11. A laser packaging assembly, characterized in that: The laser package assembly comprises: a tube shell and a light-emitting chip assembly located in the tube shell, wherein the light-emitting chip comprises the light-emitting chip assembly according to any one of claims 1 to 10.

12. The laser package assembly according to claim 11, wherein: The tube shell includes a bottom plate and a side wall, and the heat sink is welded to the bottom plate; the light-emitting chip is located on a side of the heat sink away from the tube shell bottom plate, and the first surface of the light-emitting chip is fixed to the heat sink by solder; The orthographic projection of the target area where the blocking structure is provided in the light-emitting chip on the bottom plate of the tube package is located outside the orthographic projection of the heat sink on the bottom plate of the tube package.

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