Wafer high-temperature annealing equipment

Abstract

The invention discloses wafer high-temperature annealing equipment, which comprises a machine body, an annealing device, a temperature control device and a temperature control device, and is characterized in that the machine body is arranged in an inner cavity; the furnace body is arranged in the middle of the machine body and is used for carrying out hot processing on the wafer; the feeding mechanism corresponds to the feeding end of the furnace body, and the feeding mechanism operates to convey the wafer into the furnace body for processing; a gas injection pipe of the gas injection mechanism is communicated with the furnace body, and the gas injection mechanism is started to inject process gas or refrigerant gas into the furnace body. The furnace body is independently powered by the power supply, so that the temperature of the inner cavity of the furnace body can be raised to 2000 DEG C, and a better wafer heat treatment processing environment is provided. The water cooling mechanism is arranged on the periphery of the furnace body and used for reducing the influence of high temperature generated when the furnace body works on peripheral parts, and when wafer processing is completed, cooling atmosphere can be injected into the furnace body through the gas injection mechanism, and the furnace body is rapidly cooled through water circulation of the water cooling mechanism, so that the effects of rapid heating and rapid cooling are achieved.

Description

Technical Field

[0001] The present invention relates to wafer processing technology, and in particular to a wafer high-temperature annealing device. Background Art

[0002] Wafer high temperature annealing equipment is a key equipment used in semiconductor manufacturing. Its main purpose is to improve the microstructure and performance of wafers through high temperature treatment. According to different needs and process requirements, wafer high temperature annealing equipment can be divided into many types, including traditional high temperature furnace annealing, rapid thermal annealing (RTA), laser annealing, ion beam annealing, etc.

[0003] Traditional high-temperature annealing equipment is mostly tubular furnaces or muffle furnaces. The basic principle is usually to use heating wires or silicon carbon rods to heat the furnace body. The heating and cooling speeds are slow and the heating and cooling efficiency is low, resulting in high energy consumption, low production efficiency and other problems. Summary of the invention

[0004] In view of this, the present invention aims to solve the deficiencies in the prior art, and its main purpose is to provide a high-temperature annealing equipment for wafers, which solves the problem that most traditional high-temperature annealing equipment are tubular furnaces or muffle furnaces, and the basic principle is usually to use heating wires or silicon carbon rods to heat the furnace body, the heating and cooling speeds are slow, and the heating and cooling efficiency is low, resulting in high energy consumption and low production efficiency.

[0005] To achieve the above-mentioned purpose, the present invention adopts the following technical solution: a wafer high temperature annealing device, comprising a body, wherein the body cavity is arranged with; A furnace body, which is located in the middle of the machine body and is used for thermal processing of wafers; The feeding mechanism corresponds to the feeding end of the furnace body, and the feeding mechanism operates to transport the wafers into the furnace body for processing; A gas injection mechanism, wherein a gas injection pipe of the gas injection mechanism is connected to the furnace body, and the gas injection mechanism is started to inject process gas or refrigerant gas into the furnace body; A water cooling mechanism, wherein a water supply pipe and a water return pipe in the water cooling mechanism are connected to the interlayer of the furnace body, and the water cooling mechanism is started to cool the furnace body; The heat insulation component is arranged in the feeding mechanism and the furnace body.

[0006] Furthermore, an inner tank, a heating element and a temperature detection element whose one end is connected to the inner tank are arranged in the furnace body, and a feeding end of the feeding mechanism corresponds to a feeding end of the inner tank.

[0007] Furthermore, the water cooling mechanism includes a cooling ring group inserted in the interlayer, and the cooling ring group has first and second staggered spiral grooves on both sides. The water supply pipe is connected to the water inlet end of the first spiral groove, and the return pipe is connected to the water outlet end of the second spiral groove.

[0008] Furthermore, a groove is provided on one side of the cooling circle group, a convex strip is inserted in the groove, a first connecting groove connected to the first spiral groove and a second connecting groove connected to the second spiral groove are provided on the convex strip, and a guide channel is also provided in the middle of the convex strip, and both ends of the guide channel are respectively connected to the water outlet end of the first connecting groove and the water inlet end of the second spiral groove.

[0009] Furthermore, the feeding mechanism includes a cover plate relative to the inlet end of the furnace body, a driving member for driving the cover plate to move, a cover provided on the cover plate and adapted to the inner cavity opening of the inner tank, and a positioning rod connected to the cover and a carrier plate provided on the positioning rod; during processing, the cover is moved closer to the inner tank so that the carrier plate is suspended in the inner cavity of the inner tank.

[0010] Furthermore, an insulation component is provided on the inner liner and the cover, and the insulation component includes a first insulation sheet arranged on the inner wall of the inner liner and a second insulation sheet arranged on the side of the cover opposite to the inner liner. The first insulation sheet and the second insulation sheet are adapted to each other, and a positioning rod is arranged on the second insulation sheet.

[0011] Furthermore, the first thermal insulation sheet and the second thermal insulation sheet each contain multiple layers, the multiple layers of the first thermal insulation sheet / the second thermal insulation sheet are stacked in sequence, and the opposite surfaces of the multiple layers of the first thermal insulation sheet and the second thermal insulation sheet are provided with matching overlap grooves; The heating element is a high-purity metal electrode, the first heat insulation sheet and the second heat insulation sheet are high-temperature resistant heat insulation screens, and the water cooling mechanism is connected with the inner cavities of the first heat insulation sheet and the second heat insulation sheet.

[0012] Furthermore, a receiving groove for receiving the wafer is provided in the middle of the upper end surface of the carrier, and ear grooves are provided on either side of the receiving groove and opposite to each other, and the ear grooves are connected to the receiving groove; A buffer pusher is provided on the two ear grooves, and the buffer pusher includes a receiving groove provided on the ear groove and the bottom wall of the receiving groove, a rod body provided in the inner cavity of the receiving groove, and an inclined plate sleeved on the rod body, and a notch is provided at one end of the inclined plate located in the inner cavity of the receiving groove.

[0013] Furthermore, a power source electrically connected to the heating element in the furnace body is provided in the machine body, and when the power source is activated, the heating element generates heat and cooperates with the process gas injected into the furnace body by the gas injection mechanism to process the wafer; A vacuum mechanism is provided in the machine body, which includes a vacuum pump cabinet arranged next to the machine body, and a vacuum pipeline connected to the vacuum pump in the vacuum pump cabinet. The end of the vacuum pipeline away from the vacuum pump cabinet is connected to the furnace body. The vacuum mechanism operates to extract air from the furnace body, making the furnace body a vacuum state.

[0014] Furthermore, the gas injection mechanism includes a gas cabinet and a gas supply pipe connected to each bottle body on the gas cabinet, and the gas supply pipe extends into the furnace body and is connected to the inner cavity of the inner tank.

[0015] Compared with the prior art, the present invention has obvious advantages and beneficial effects. Specifically, it can be seen from the above technical scheme that by independently powering the furnace body through a power supply, the temperature of the furnace cavity can be increased to 2000°, so as to provide a better wafer heat treatment processing environment.

[0016] The water cooling mechanism is arranged around the furnace body to reduce the impact of the high temperature generated when the furnace body is working on the surrounding components. When the wafer processing is completed, the furnace body can be quickly cooled down by injecting cooling atmosphere into the furnace body through the gas injection mechanism and by circulating water through the water cooling mechanism, so as to achieve the effect of rapid heating and cooling.

[0017] In order to more clearly illustrate the structural features and effects of the present invention, the present invention is described in detail below in conjunction with the accompanying drawings and specific embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a three-dimensional schematic diagram of embodiment 1 of the present invention.

[0019] Figure 2 It is a structural coordination diagram of the furnace body of Example 1 of the present invention.

[0020] Figure 3 It is a three-dimensional diagram of the furnace body of Example 1 of the present invention.

[0021] Figure 4 It is a three-dimensional diagram of the gas injection mechanism of Example 1 of the present invention.

[0022] Figure 5 It is a connection diagram of the furnace body and feeding mechanism of Example 1 of the present invention.

[0023] Figure 6 It is a three-dimensional diagram of the feeding mechanism of Example 1 of the present invention.

[0024] Figure 7 It is a rear view of the furnace body of Example 1 of the present invention.

[0025] Figure 8 It is a display diagram of the cooling circle group of Example 1 of the present invention.

[0026] Fig. 9 This is a diagram showing the inner cavity of the furnace body of Example 1 of the present invention.

[0027] Fig.10 This is a diagram showing the inner cavity of the receiving tank of Example 1 of the present invention.

[0028] Fig.11 It is a cross-sectional view showing the carrier of Example 1 of the present invention.

[0029] Fig.12 It is a display diagram of the buffer pusher of Example 1 of the present invention.

[0030] Fig.13 It is a three-dimensional display diagram of the auxiliary rod of Example 1 of the present invention.

[0031] Description of the accompanying drawings: 10 bodies; 21 furnace body, 22 inner tank, 23 heating element, 24 temperature detection element, 25 spacing, 26 support rod; 30 feeding mechanism, 31 cover plate, 311 first plate body, 312 second plate body, 313 sealing strip, 32 driving member, 33 cover, 331 plug hole, 332 auxiliary rod, 3321 connecting hole, 3322 elastic rod, 34 positioning rod, 341 overlapping groove, 35 carrier plate, 351 containing groove, 352 ear groove; 40 gas injection mechanism, 41 gas cabinet, 42 gas transmission pipe; 50 water cooling mechanism, 51 water delivery pipe, 52 water return pipe, 53 interlayer, 54 cooling circle group, 55 first spiral groove, 56 second spiral groove, 57 groove, 58 convex strip, 581 first connecting groove, 582 second connecting groove, 59 guide channel; 60 power supply; 70 vacuum mechanism, 71 vacuum pump cabinet, 72 vacuum pipeline; 80 heat insulation assembly, 81 first heat insulation sheet, 82 second heat insulation sheet, 83 lap groove; 90 , a buffer pusher, 91 , a receiving groove, 92 , a rod body, 93 , an inclined plate, 94 , a notch, 95 , an extension groove, and 96 , a torsion spring. DETAILED DESCRIPTION

[0032] Please refer to Figure 1-13 As shown, it shows the specific structure of the preferred first embodiment of the present invention, which is a wafer high temperature annealing equipment, including a body 10, the inner cavity of the body 10 is arranged with; A furnace body 21, which is disposed in the middle of the machine body 10 and is used for thermal processing of wafers; A feeding mechanism 30, the feeding mechanism 30 corresponds to the feeding end of the furnace body 21, and the feeding mechanism 30 operates to transport the wafers into the furnace body 21 for processing; A gas injection mechanism 40, wherein a gas injection pipe of the gas injection mechanism 40 is connected to the furnace body 21, and the gas injection mechanism 40 is started to inject process gas or refrigerant gas into the furnace body 21; A water cooling mechanism 50, wherein a water supply pipe 51 and a water return pipe 52 in the water cooling mechanism 50 are connected to an interlayer 53 of the furnace body 21, and the water cooling mechanism 50 is started to cool down the furnace body 21; The heat insulation component 80 is arranged in the feeding mechanism 30 and the furnace body 21. Compared with the traditional wafer high temperature annealing equipment, most of which are tube furnaces or muffle furnaces, the basic principle is usually to use heating wires or silicon carbon rods to heat the furnace body, the heating and cooling speeds are slow, the heating and cooling efficiency is low, and the temperature cannot be monitored, and the uniform temperature requirement of the heating area cannot be guaranteed. The present wafer high temperature annealing equipment independently supplies power to the furnace body 21 through the power supply 60, so that the temperature of the inner cavity of the furnace body 21 can be increased to 2000° to provide a better wafer heat treatment processing environment. In addition, the feeding mechanism 30 corresponds to the inlet end of the furnace body 21, and the feeding mechanism 30 can transport the wafer to the inner cavity of the furnace body 21 for heat treatment with the drive of external force. The gas injection mechanism 40 is placed at the bottom of the inner cavity of the machine body 10, and the gas outlet of the gas injection mechanism 40 is connected to the furnace body 21. The formula gas is injected into the furnace body 21 through the gas injection mechanism 40, and a chemical reaction is generated under the high temperature in the furnace body 21 to process the wafer on the feeding mechanism 30. The water cooling mechanism 50 is arranged around the furnace body 21 to reduce the influence of the high temperature generated when the furnace body 21 is working on the surrounding parts, and when the wafer processing is completed, the furnace body 21 can also be quickly cooled down by injecting cooling atmosphere into the furnace body 21 through the gas injection mechanism 40 and circulating water through the water cooling mechanism 50, so as to achieve the effect of rapid heating and rapid cooling.

[0033] The furnace body 21 is provided with an inner tank 22, and a heating element 23 and a temperature detection element 24 connected to the inner tank 22 at one end, and the feeding end of the feeding mechanism 30 corresponds to the feeding end of the inner tank 22. Compared with the inner tank 21, the inner tank 22 has a smaller chamber volume, so that after the feeding end of the feeding mechanism 30 is inserted into the inner tank 22, the heating of the heating element 23 makes it easier to quickly increase the temperature of the inner tank 22, so as to better perform thermal processing on the wafers transported to the inner tank 22 by the feeding mechanism 30. In addition, there is a gap 25 between the surface wall of the inner tank 22 and the inner wall of the furnace body 21. While accommodating the heating element 23 and the temperature detection element 24, the gap 25 can accommodate the heat conducted from the inner tank 22, so as to avoid the heat conducted from the furnace body 21 affecting other components near the machine body 10.

[0034] Specifically, the inner liner 22 is installed in the inner cavity of the furnace body 21 through a detachable support rod 26, so that the feeding end of the inner liner 22 corresponds to the feeding end of the feeding mechanism 30, so as to facilitate the replacement of the inner liner 22 when it is damaged. The heating element 23 is electrically connected to the power supply 60, and the heating element 23 starts to generate heat when the power supply 60 is running. The vacuum mechanism 70 is connected to the inner cavity of the furnace body 21 through the exhaust pipe to ensure that the inner cavity of the furnace body 21 is in a vacuum state during wafer processing, so that the process gas injected into the inner liner 22 by the gas injection mechanism 40 will not be mixed with air, thereby reducing the processing effect of the wafer.

[0035] like Figure 7As shown, the water cooling mechanism 50 includes a cooling coil group 54 inserted in the interlayer 53, and the cooling coil group 54 is provided with staggered first spiral grooves 55 and second spiral grooves 56 on both sides, and the water pipe 51 is connected with the water inlet end of the first spiral groove 55, and the return pipe 52 is connected with the water outlet end of the second spiral groove 56. The cooling coil group 54 is adapted to the interlayer 53, so that the surface wall of the cooling coil group 54 fits the furnace body 21. When the temperature of the inner cavity of the furnace body 21 increases, the temperature is transferred to the cooling coil group 54. At this time, the water flows through the water pipe 51 into the first spiral groove 55 to circulate, so as to reduce the temperature of the surface wall of the furnace body 21, and then enters the second spiral groove 55 to cool the inner wall of the furnace body 21, thereby increasing the water cooling area and improving the heat dissipation effect to avoid damage to the furnace body 21 at high temperature.

[0036] It should be noted that the first spiral groove 55 corresponds to the outer wall of the furnace body 21, and the second spiral groove 55 corresponds to the inner wall of the furnace body 21. When the water flows into the interlayer 53 from the water delivery pipe 51 and is discharged from the return pipe 52, because the first spiral groove 55 is close to the outer wall of the furnace body 21, the temperature is relatively low, and the second spiral groove 55 is close to the inner wall of the furnace body 21. The temperature is high, by adding a cooling ring group 54 in the interlayer 53, and opening the first spiral groove 55 and the second spiral groove 56 on the cooling ring group 54, the flow area of ​​the cooling water can be increased, so that the cooling water discharged from the return pipe 52 can take away more heat, so as to better avoid damage to the furnace body 21, and also when cooling the furnace body 21, it can also achieve a better cooling effect.

[0037] like Fig. 9 As shown, exemplarily, a groove 57 is provided on one side of the cooling circle group 54, a convex strip 58 is inserted in the groove 57, a first connecting groove 581 connected to the first spiral groove 55 and a second connecting groove 582 connected to the second spiral groove 56 are provided on the convex strip 58, and a guide channel 59 is also provided in the middle of the convex strip 58, and both ends of the guide channel 59 are respectively connected to the water outlet end of the first connecting groove 581 and the water inlet end of the second spiral groove 56. Due to the adaptation of the cooling circle group 54 and the interlayer 53, the water flowing in the first spiral groove 55 cannot enter the second spiral groove 56. For this reason, a groove 57 is provided on the cooling circle group 54, and a convex strip 58 corresponding to the groove 57 is fixed in the interlayer 53. When a first connecting groove 581 corresponding to the first spiral groove 55 is provided at one end of the convex strip 58, the water flow in the first spiral groove 55 can flow normally. When the water flow flows to the water outlet end of the first spiral groove 55, a cooling cycle is completed. The water flow in the first spiral groove 55 is led to the second spiral groove 55 through the guide channel 59 provided in the middle part of the inner cavity of the convex strip 58, and as the second connecting groove 582 is connected with the second spiral groove 56, the water flow enters the return pipe 52 from the water outlet end of the second spiral groove 56, and a secondary cooling cycle is performed. Through two cooling cycles, the cooling effect of the water cooling mechanism 50 on the furnace body 21 is further improved.

[0038] like Figure 6 As shown, exemplarily, the feeding mechanism 30 includes a cover plate 31 relative to the inlet end of the furnace body 21, a driving member 32 for driving the cover plate 31 to move, a cover 33 provided on the cover plate 31 and adapted to the inner cavity opening of the liner 22, and a positioning rod 34 connected to the cover 33 and a carrier plate 35 provided on the positioning rod 34; during processing, the cover 33 moves closer to the liner 22, so that the carrier plate 35 enters the inner cavity of the liner 22 and is suspended in the air. The wafer is placed on the carrier 35. When processing the wafer, the driving member 32 drives the cover plate 31 to move closer to the furnace body 21 until the cover 33 is inserted into the inner cavity of the inner tank 22. As the heating member 23 is started, the temperature of the inner cavity of the inner tank 22 increases, and the wafer on the carrier 35 is processed. After the processing is completed, the inner cavity of the furnace body 21 is cooled by the water cooling mechanism 50 and the gas injection mechanism 40. The gas injection mechanism 40 also cools the inner cavity of the inner tank 22 by injecting refrigerant into the furnace body 21. Then, the cover 33 is driven to separate from the inner tank 22 by the operation of the driving member 32 again, and the carrier 35 is exposed. The operator replaces the unprocessed wafer to the carrier 35.

[0039] Specifically, the cover plate 31 is divided into a first plate body 311 and a second plate body 312. The second plate body 312 is located on a side of the first plate body 311 opposite to the furnace body 21. The cover 33 is located on the second plate body 312. The driving member 32 is connected to the first plate body 311. The second plate body 312 is adapted to the opening of the furnace body 21. As the second plate body 312 fits the feeding end of the furnace body 21, the sealing strip 313 on the second plate body 312 abuts against the end wall of the furnace body 21 to ensure the sealing of the inner cavity of the furnace body 21 during processing.

[0040] In one embodiment, there are no less than two positioning rods 34 , and the two positioning rods 34 are provided with corresponding overlapping grooves 341 , and the side edges of the carrier plate 35 fit the overlapping grooves 341 , so that the carrier plate 35 can overlap the overlapping grooves 341 on the positioning rods 34 .

[0041] In one embodiment, a receiving groove 351 for receiving wafers is provided in the middle of the upper end surface of the carrier 35 , and ear grooves 352 are provided on either side of the receiving groove 351 to facilitate operators to take the wafers placed in the receiving groove 351 .

[0042] In one embodiment, a plurality of equally spaced insertion holes 311 are disposed on one side of the cover 33 facing the inner container 22, and a pluggable auxiliary rod 332 is disposed in the insertion hole 331, and the auxiliary rod 332 extends to the bottom of the carrier 35. The carrier 35 is overlapped on the auxiliary rod 332, mainly corresponding to the receiving groove 351, so that the wafers on the carrier 35 are more stable during processing and transportation.

[0043] In one embodiment, connecting holes 3321 are provided on opposite sides of the two auxiliary rods 332, and elastic members 3322 are inserted into the connecting holes 3321, and the elastic members 3322 are in contact with the lower end of the carrier 35. The connecting holes 3321 are cleaning holes so that the elastic members 3322 inserted into the connecting holes 3321 are arc-shaped, so that when the carrier 35 is squeezed, the elastic members 3322 can resist the carrier 35 to reduce the deformation of the carrier 35, thereby increasing the service life of the carrier 35.

[0044] like Figure 3 As shown, a heat insulation assembly 80 is provided on the inner liner 22 and the cover 33, and the heat insulation assembly 80 includes a first heat insulation sheet 81 provided on the inner wall of the inner liner 22 and a second heat insulation sheet 82 provided on the side of the cover 33 opposite to the inner liner 22. The first heat insulation sheet 81 and the second heat insulation sheet 82 are adapted to each other, and the positioning rod 34 is provided on the second heat insulation sheet 82.

[0045] The first heat insulation sheet 81 and the second heat insulation sheet 82 both have multiple layers, and the multiple layers of the first heat insulation sheet 81 / the second heat insulation sheet 82 are stacked in sequence, and the opposite surfaces of the multiple layers of the first heat insulation sheet 81 and the second heat insulation sheet 82 are provided with matching grooves 83; The heating element 23 is a high-purity metal electrode, the first heat insulation sheet 81 and the second heat insulation sheet 82 are high-temperature resistant heat insulation screens, and the water cooling mechanism 50 is connected to the inner cavities of the first heat insulation sheet 81 and the second heat insulation sheet 82. The first heat insulation sheet 81 covers the four inner walls of the inner tank 22 to reduce the temperature of the inner cavity of the inner tank 22 when the temperature rises and is transmitted to the furnace body 21, so as to reduce the possibility of damage to the furnace body 21 due to high temperature. The setting of the second heat insulation sheet 82 on the cover 33 can also effectively reduce the heat conducted from the cover 33, and further reduce the impact on the furnace body 21 and the sealing strip 313 when the temperature in the inner tank 22 rises to 2000°.

[0046] It should be noted that the high temperature resistant heat insulation screen can effectively reduce the temperature of the outer surface of the inner tank 22 to avoid damage caused by excessive temperature in the furnace body 21 .

[0047] Specifically, when the first thermal insulation sheet 81 and the second thermal insulation sheet 82 are plugged in, the overlap grooves 83 on the first thermal insulation sheet 81 and the second thermal insulation sheet 82 are plugged in, so as to further enhance the thermal insulation effect of the first thermal insulation sheet 81 and the second thermal insulation sheet 82 .

[0048] like Fig.10 As shown, illustratively, a receiving groove 351 for receiving a wafer is provided in the middle of the upper end surface of the carrier 35, and ear grooves 352 are provided on either side of the receiving groove 351, and the ear grooves 352 are connected to the receiving groove 351; A buffer pusher 90 is provided on the two ear grooves 352. The buffer pusher 90 includes a receiving groove 91 provided on the ear grooves 352 and the bottom wall of the receiving groove 351, a rod body 92 provided in the inner cavity of the receiving groove 91, and an inclined plate 93 sleeved on the rod body 92. The inclined plate 93 is provided with a notch 94 at one end of the inner cavity of the receiving groove 351. When the clamping end of the external manipulator extends into the ear groove 352 to clamp the wafer placed in the receiving groove 351, the clamping end of the manipulator needs to contact the bottom wall of the ear groove 352 to clamp the wafer because the wafer is relatively thin. However, as the working time of the mechanized process increases, the carrier 35 is prone to bending and tilting. For this reason, a receiving groove 91 extending into the receiving groove 91 is provided on the bottom wall of the ear groove 352 of the carrier 35, and an inclined plate 93 is placed in the receiving groove 91. The inclined plate 93 is sleeved and fixed to the rod body 92 in the inner cavity of the receiving groove 91. 2, and one end of the inclined plate 93 is tilted and extends above the ear groove 352. When the clamping end of the robot arm extends into the ear groove 352, it will contact the tilted end of the inclined plate 93, so that the tilted end of the inclined plate 93 moves downward together with the clamping end of the robot arm. At this time, the inclined plate 93 will move around the rod body 92, that is, the side away from the clamping end of the robot arm is tilted in the inner cavity of the accommodating groove 351, so that the wafer placed in the accommodating groove 351 is suspended in the air, so as to facilitate the clamping end of the robot arm to clamp the wafer in the accommodating groove 351.

[0049] It should be noted that the tilting plate 93 is divided into two parts, one part is located in the ear groove 352, and the other part is located in the receiving groove 351. The tilting plate 93 located in the ear groove 352 is in a raised state when not squeezed by the clamping end of the robot arm, while the part located in the receiving groove 351 is in a concave state. In this way, the tilting plate 93 can lift the wafer with the squeezing of the clamping end of the robot arm, and can also ensure that the tilting plate 93 will not affect the fit between the wafer and the bottom wall of the receiving groove 351 during normal processing.

[0050] In one embodiment, in order to reduce the influence of the inclined plate 93 that drives the wafer in the receiving groove 351 upward on the clamping of the wafer by the robot, a recess 94 is opened on the portion of the inclined plate 93 located in the receiving groove 351, so that the portion of the inclined plate 93 located in the receiving groove 351 is changed from a plate body to two legs. By lifting up the two legs, the wafer can be suspended in the inner cavity of the receiving groove 351 when the inclined plate 93 is lifted up, cooperating with the clamping end of the robot, and at the same time preventing the inclined plate 93 from blocking the clamping of the wafer by the robot.

[0051] In one embodiment, in order to further prevent the inclined plate 93 from affecting the horizontal degree of the wafer when placed in the receiving groove 351, a recessed extension groove 95 is opened in the portion of the receiving groove 91 located in the receiving groove 351, and the inclined plate 93 partially extends into the extension groove 95, thereby providing the inclined plate 93 with sufficient accommodating space to prevent the inclined plate 93 from blocking and affecting the fit between the wafer and the bottom wall of the receiving groove 351.

[0052] It should be noted that the connection between the extension groove 95 and the receiving groove 91 is provided with an arc design to facilitate the tilting plate 93 to move through the rod body 92 under extrusion, and the movement mode of the tilting plate 93 is consistent with that of the seesaw.

[0053] In one embodiment, in order to further facilitate the reset of the tilting plate 93 after it is tilted, a torsion spring 96 is sleeved on the rod body 92, and the two ends of the torsion spring 96 are respectively connected to the inner wall of the tilting plate 93 and the side wall of the accommodating groove 91, so that the tilting plate 93 can be elastically reset by the torsion spring 96 when there is no external force squeezing.

[0054] The machine body 10 is provided with a power supply 60 electrically connected to the heating element 23 in the furnace body 21. When the power supply 60 is activated, the heating element 23 generates heat and cooperates with the process gas injected into the furnace body 21 by the gas injection mechanism 40 to process the wafer. The body 10 is provided with a vacuum mechanism 70, which includes a vacuum pump cabinet 71 provided beside the body 10, and a vacuum pipeline 72 connected to the vacuum pump in the vacuum pump cabinet 71. The end of the vacuum pipeline 72 away from the vacuum pump cabinet 71 is connected to the furnace body 21. The vacuum mechanism 70 operates to extract air from the furnace body 21, so that the furnace body 21 becomes a vacuum state. Before the gas injection mechanism 40 injects process gas to cooperate with the wafer hot processing, the vacuum system 70 starts to work and starts the vacuum pumping step. After the furnace body 21 reaches the set vacuum value, the gas cabinet 41 injects the corresponding process gas into the inner tank 22 to maintain a stable vacuum degree in the high-temperature furnace body 21 and the inner tank 22.

[0055] The gas injection mechanism 40 includes a gas cabinet 41 and a gas delivery pipe 42 connecting the bottles on the gas cabinet 41. The gas delivery pipe 42 extends into the furnace body 21 and is connected to the inner cavity of the inner tank 22. When processing the wafer, the process gas is sprayed out of the gas delivery pipe 42 to cooperate with the heating element 23 to perform thermal processing on the wafer. After the thermal treatment of the wafer is completed, the power supply 60 is turned off, the heating element 23 stops heating, and a large amount of cooling atmosphere is introduced through the gas cabinet 41 into the inner tank 22 to quickly cool the wafer.

[0056] Specifically, the wafer can be cooled faster by the dual coordination of the cooling atmosphere and the water flow in the interlayer.

[0057] The above description is only a preferred embodiment of the present invention and does not limit the technical scope of the present invention. Therefore, any slight modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present invention are still within the scope of the technical solution of the present invention.

Claims

1. A wafer high temperature annealing device, comprising a body (10), characterized in that: The inner cavity of the machine body (10) is arranged with: A furnace body (21), the furnace body (21) being arranged in the middle of the machine body (10) and used for performing thermal processing on wafers; A feeding mechanism (30), the feeding mechanism (30) corresponding to a feeding end of the furnace body (21), the feeding mechanism (30) being operated to transport wafers into the furnace body (21) for processing; A gas injection mechanism (40), wherein a gas injection pipe of the gas injection mechanism (40) is connected to the furnace body (21), and the gas injection mechanism (40) is started to inject process gas or refrigerant gas into the furnace body (21); A water cooling mechanism (50), wherein a water supply pipe (51) and a water return pipe (52) in the water cooling mechanism (50) are connected to an interlayer (53) of the furnace body (21), and the water cooling mechanism (50) is started to cool the furnace body (21); A heat insulation component (80), wherein the heat insulation component (80) is arranged in the feeding mechanism (30) and the furnace body (21).

2. The wafer high temperature annealing equipment according to claim 1, characterized in that: The furnace body (21) is provided with an inner container (22), and a heating element (23) and a temperature detection element (24) connected to the inner container (22) at one end, and a feeding end of the feeding mechanism (30) corresponds to a feeding end of the inner container (22).

3. A wafer high temperature annealing device according to claim 2, characterized in that: The water cooling mechanism (50) comprises a cooling coil group (54) inserted into the interlayer (53), and the cooling coil group (54) is provided with staggered first spiral grooves (55) and second spiral grooves (56) on both sides, the water supply pipe (51) is connected to the water inlet section of the first spiral groove (55), and the return pipe (52) is connected to the water outlet end of the second spiral groove (56).

4. A wafer high temperature annealing device according to claim 3, characterized in that: A groove (57) is provided on one side of the cooling ring group (54), a convex strip (58) is inserted into the groove (57), a first connecting groove (581) connected to the first spiral groove (55) and a second connecting groove (582) connected to the second spiral groove (56) are provided on the convex strip (58), and a guide channel (59) is also provided in the middle of the convex strip (58), and two ends of the guide channel (59) are respectively connected to the water outlet end of the first connecting groove (581) and the water inlet end of the second spiral groove (56).

5. The wafer high temperature annealing equipment according to claim 2, characterized in that: The feeding mechanism (30) comprises a cover plate (31) at an inlet end relative to the furnace body (21), a driving member (32) for driving the cover plate (31) to move, a cover (33) provided on the cover plate (31) and adapted to the inner cavity opening of the inner container (22), a positioning rod (34) connected to the cover plate (33), and a carrier plate (35) provided on the positioning rod (34); during processing, the cover plate (33) moves closer to the inner container (22), so that the carrier plate (35) is suspended in the inner cavity of the inner container (22).

6. The wafer high temperature annealing equipment according to claim 5, characterized in that: The inner liner (22) and the cover (33) are provided with a heat insulation component (80), the heat insulation component (80) comprising a first heat insulation sheet (81) provided on the inner wall of the inner liner (22) and a second heat insulation sheet (82) provided on a side of the cover (33) opposite to the inner liner (22), the first heat insulation sheet (81) and the second heat insulation sheet (82) being matched with each other, and a positioning rod (34) being provided on the second heat insulation sheet (82).

7. The wafer high temperature annealing equipment according to claim 6, characterized in that: The first thermal insulation sheet (81) and the second thermal insulation sheet (82) both contain multiple layers, the multiple layers of the first thermal insulation sheet (81) / the second thermal insulation sheet (82) are stacked in sequence, and the opposing surfaces of the multiple layers of the first thermal insulation sheet (81) and the second thermal insulation sheet (82) are provided with matching lap grooves (83); The heating element (23) is a high-purity metal electrode, the first heat insulation sheet (81) and the second heat insulation sheet (82) are high-temperature resistant heat insulation screens, and the water cooling mechanism (50) is connected to the inner cavities of the first heat insulation sheet (81) and the second heat insulation sheet (82).

8. The wafer high temperature annealing equipment according to claim 5, characterized in that: A receiving groove (351) for receiving a wafer is provided in the middle of the upper end surface of the carrier (35), and ear grooves (352) are provided on either side of the receiving groove (351) and opposite to each other, and the ear grooves (352) are connected to the receiving groove (351); A buffer pusher (90) is provided on the two ear grooves (352), and the buffer pusher (90) comprises a receiving groove (91) provided on the ear groove (352) and the bottom wall of the receiving groove (351), a rod body (92) provided in the inner cavity of the receiving groove (91), and an inclined plate (93) sleeved on the rod body (92), and a notch (94) is provided at one end of the inclined plate (93) located in the inner cavity of the receiving groove (351).

9. The wafer high temperature annealing equipment according to claim 1, characterized in that: A power source (60) electrically connected to a heating element (23) in the furnace body (21) is provided in the machine body (10); when the power source (60) is activated, the heating element (23) generates heat and cooperates with the process gas injected into the furnace body (21) by the gas injection mechanism (40) to process the wafer; A vacuum mechanism (70) is provided in the machine body (10), the vacuum mechanism (70) comprising a vacuum pump cabinet (71) provided beside the machine body (10), and a vacuum pipeline (72) connected to a vacuum pump in the vacuum pump cabinet (71), one end of the vacuum pipeline (72) away from the vacuum pump cabinet (71) being connected to the furnace body (21), and the vacuum mechanism (70) is operated to extract air from the furnace body (21), so that the furnace body (21) becomes in a vacuum state.

10. The wafer high temperature annealing equipment according to claim 1, characterized in that: The gas injection mechanism (40) comprises a gas cabinet (41) and a gas delivery pipe (42) communicating with the bottles on the gas cabinet (41); the gas delivery pipe (42) extends into the furnace body (21) and communicates with the inner cavity of the inner container (22).

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