Ultra-short optical pulse source chip and ultra-short optical pulse source apparatus

Abstract

This invention provides an ultrashort optical pulse source chip and an ultrashort optical pulse source device, relating to the field of semiconductor optoelectronic integrated device technology. The ultrashort optical pulse source chip includes: an electro-absorption modulated laser 110, a phase modulator 120, an optical pulse compression component 130, and a substrate 140. The phase modulator 120 is connected to both the electro-absorption modulated laser 110 and the optical pulse compression component 130. The electro-absorption modulated laser 110, the phase modulator 120, and the optical pulse compression component 130 are located on the same side of the substrate 140. The electro-absorption modulated laser 110 generates a primary optical pulse; the phase modulator 120 introduces chirp into the primary optical pulse to obtain a second optical pulse; and the optical pulse compression component 130 compresses and amplifies the power of the second optical pulse to obtain a target optical pulse. This invention provides a monolithically integrated, small-sized ultrashort optical pulse source chip and enables the generation of high-quality ultrashort optical pulses using this chip.

Description

Technical Field

[0001] This invention relates to the field of semiconductor optoelectronic integrated device technology, and in particular to an ultrashort optical pulse source chip and an ultrashort optical pulse source device. Background Technology

[0002] Ultrashort optical pulse sources have important applications in systems such as optical analog-to-digital converters (ADCs), ultra-high-speed time-division multiplexing (OTDM) systems, optical fiber communication, and optical fiber terahertz (THz) communication.

[0003] However, existing optical pulse generation technologies cannot directly generate high-quality ultrashort optical pulses. They usually require multi-stage fiber compression to reduce the primary pulse width and nonlinear shaping to achieve high-quality ultrashort pulses, resulting in large link losses, complex system structure, and high cost. Summary of the Invention

[0004] This invention provides an ultrashort optical pulse source chip and an ultrashort optical pulse source device to solve the defects of existing technologies that use nonlinear shaping to achieve high-quality ultrashort pulses, resulting in large link losses, complex system structures, and high costs. It realizes a miniaturized ultrashort optical pulse source chip with adjustable repetition frequency.

[0005] This invention provides an ultrashort optical pulse source chip, comprising:

[0006] The system comprises an electroabsorption modulated laser 110, a phase modulator 120, an optical pulse compression assembly 130, and a substrate 140. The phase modulator 120 is connected to both the electroabsorption modulated laser 110 and the optical pulse compression assembly 130. The electroabsorption modulated laser 110, the phase modulator 120, and the optical pulse compression assembly 130 are located on the same side of the substrate 140.

[0007] The electroabsorption modulated laser 110 is used to generate primary optical pulses;

[0008] The phase modulator 120 is used to introduce chirp into the primary optical pulse to obtain a second optical pulse;

[0009] The optical pulse compression component 130 is used to compress and amplify the power of the second optical pulse to obtain the target optical pulse.

[0010] According to the present invention, an ultrashort optical pulse source chip is provided, wherein the optical pulse compression component 130 includes: a first optical amplifier connected to the phase modulator 120; wherein the first optical amplifier is used to compress and amplify the power of the second optical pulse to obtain the target optical pulse.

[0011] According to the present invention, an ultrashort optical pulse source chip is provided, wherein the optical pulse compression component 130 includes: a chirped Bragg grating and a second optical amplifier, wherein the chirped Bragg grating is connected to the phase modulator 120 and the second optical amplifier respectively; wherein the chirped Bragg grating is used to compress the second optical pulse to obtain a third optical pulse; and the second optical amplifier is used to amplify the power of the third optical pulse to obtain the target optical pulse.

[0012] According to the present invention, an ultrashort optical pulse source chip is provided, wherein the electro-absorption modulated laser 110 includes a distributed feedback laser 111 and an electro-absorption modulator 112, the electro-absorption modulator 112 being connected to the distributed feedback laser 111 and the phase modulator 120 respectively; wherein, the distributed feedback laser 111 is used to generate DC light; the electro-absorption modulator 112 is used to modulate the DC light to obtain the primary optical pulse when the voltage applied to the electro-absorption modulator 112 satisfies a preset voltage; the preset voltage is used to keep the modulation range of the electro-absorption modulator 112 in the nonlinear region.

[0013] According to the present invention, in an ultrashort optical pulse source chip, the output waveguide direction of the first optical amplifier has a first preset tilt angle with the cleavage end face of the ultrashort optical pulse source chip.

[0014] According to the present invention, in an ultrashort optical pulse source chip, the output waveguide direction of the second optical amplifier has a second preset tilt angle with the cleavage end face of the ultrashort optical pulse source chip.

[0015] According to the present invention, the active layer corresponding to the electroabsorption modulated laser 110, the active layer corresponding to the phase modulator 120, and the active layer corresponding to the optical pulse compression component 130 are made of the same active region material.

[0016] According to the present invention, an ultrashort optical pulse source chip is provided in which the top of the electroabsorption modulated laser 110, the top of the phase modulator 120 and the top of the optical pulse compression component 130 each have their own corresponding P-type electrodes, and an electrical isolation trench is provided between each of the P-type electrodes.

[0017] According to the present invention, an ultrashort optical pulse source chip is provided, wherein the P-type electrode is circular.

[0018] The present invention also provides an ultrashort optical pulse source device, including any of the ultrashort optical pulse source chips described above.

[0019] The ultrashort optical pulse source chip and ultrashort optical pulse source device provided by the present invention are connected to an electroabsorption modulated laser 110 and an optical pulse compression component 130 respectively through a phase modulator 120, and the three are placed on the same side of a substrate 140 to form a monolithically integrated, small-sized ultrashort optical pulse source chip. Furthermore, the electroabsorption modulated laser 110 generates a narrower primary optical pulse, and the optical pulse compression component 130 compresses and amplifies the power of the chirped second optical pulse to obtain a narrower target optical pulse. At the same time, the power of the optical pulse can be increased by power amplification, thereby obtaining a high-quality ultrashort optical pulse. Attached Figure Description

[0020] To more clearly illustrate the technical solutions in this invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0021] Figure 1 This is a schematic diagram of the structure of the ultrashort optical pulse source chip provided by the present invention.

[0022] Figure 2 This is a top view of the ultrashort optical pulse source chip provided by the present invention.

[0023] Figure 3 This is a side view of the ultrashort optical pulse source chip provided by the present invention.

[0024] Figure label:

[0025] 100: Ultrashort optical pulse source chip; 110: Electro-absorption modulated laser; 120: Phase modulator 120; 130: Optical pulse compression component; 140: Substrate; 111: Distributed feedback laser; 112: Electro-absorption modulator. Detailed Implementation

[0026] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0027] Ultrashort optical pulse sources have broad application prospects in various scenarios such as communication, radar, medical imaging, and audio processing. Existing technologies for generating ultrashort optical pulses mainly include gain-switched lasers, mode-locked lasers, and chirped dispersion compensation compression.

[0028] However, existing short-pulse optical sources all have different drawbacks. For example, gain-switched lasers have large output pulse widths and low pulse repetition frequencies, with obvious chirping and timing jitter. Mode-locked lasers can output high-repetition-rate, ultrashort pulses, but their repetition frequency is difficult to tune due to cavity length limitations. Chirp-dispersion compensation compression schemes can generate ultrapulses with adjustable repetition frequencies. A typical structure includes a phase modulator 120 for generating chirp, an intensity modulator for selecting the pulse chirp direction and pulse cutting, and a dispersion medium for pulse compression. The pulse width is related to parameters such as quality, chirp magnitude, linearity, dispersion compensation degree, and initial pulse cutting window. In traditional methods, the intensity modulator is mostly based on a Mach-Zehnder interference structure. The cutting window width generated by this method is 50% of the modulation period. The selected chirp component contains a lot of nonlinear components. After linear dispersion compensation compression, the nonlinear parts on both sides of the pulse cannot be effectively compensated, forming a pulse base and affecting the pulse quality.

[0029] In chirped dispersion compensation compression schemes, methods to improve pulse quality include minimizing the pulse cutting window width and selecting only the linear chirped portion, as well as employing post-stage pulse shaping. Typically, multi-stage fiber compression is used to reduce the primary pulse width, followed by nonlinear shaping to achieve high-quality ultrashort pulses. However, this process usually involves nonlinear spectral broadening and filtering, resulting in significant link loss. It requires one or more stages of optical amplification, and the fiber used for dispersion compensation and nonlinear spectral broadening can exceed 100 meters, leading to a large system size, complex structure, and high cost.

[0030] To address the aforementioned issues, this invention proposes an ultrashort optical pulse source chip. An electro-absorption modulated laser 110 and an optical pulse compression component 130 are connected via a phase modulator 120, and all three are placed on the same side of a substrate 140, forming a monolithically integrated, small-sized ultrashort optical pulse source chip. Furthermore, the electro-absorption modulated laser 110 generates a narrower primary optical pulse, and the optical pulse compression component 130 compresses and amplifies the power of the chirped second optical pulse to obtain an even narrower target optical pulse. Simultaneously, power amplification can increase the power of the optical pulse, thereby obtaining a high-quality ultrashort optical pulse.

[0031] The following is combined with Figures 1-3 The present invention describes an ultrashort optical pulse source chip.

[0032] Figure 1 This is one of the structural schematic diagrams of the ultrashort optical pulse source chip provided by the present invention, such as... Figure 1 As shown, the ultrashort optical pulse source chip 100 includes:

[0033] The system comprises an electroabsorption modulated laser 110, a phase modulator 120, an optical pulse compression assembly 130, and a substrate 140. The phase modulator 120 is connected to both the electroabsorption modulated laser 110 and the optical pulse compression assembly 130. The electroabsorption modulated laser 110, the phase modulator 120, and the optical pulse compression assembly 130 are located on the same side of the substrate 140.

[0034] The electroabsorption modulated laser 110 is used to generate primary optical pulses;

[0035] The phase modulator 120 is used to introduce chirp into the primary optical pulse to obtain a second optical pulse;

[0036] The optical pulse compression component 130 is used to compress and amplify the power of the second optical pulse to obtain the target optical pulse.

[0037] Here, the substrate 140 is also called the substrate, and the substrate can be made of group III-V semiconductor materials such as indium phosphide or gallium arsenide. The phase modulator 120 modulates the phase of the light pulse based on the electro-optic effect of the semiconductor material.

[0038] In this embodiment of the invention, the distributed feedback laser 111 in the electroabsorption modulated laser 110 generates DC light, and the electroabsorption modulator 112 generates a primary optical pulse by modulating the DC light with an externally applied voltage.

[0039] Here, compression refers to compressing the width of the second optical pulse to obtain an ultrashort optical pulse; power amplification refers to increasing the gain of the ultrashort optical pulse.

[0040] In this embodiment of the invention, the material system growth structure of the electroabsorption modulated laser 110 and the phase modulator 120 includes, from bottom to top: a substrate, a buffer layer, a lower confinement layer, an active layer, an upper confinement layer, an upper capping layer, and an ohmic contact layer.

[0041] In this embodiment of the invention, the phase modulator 120, after being driven by a suitable voltage, receives an external radio frequency (RF) signal. This external RF signal and the RF signal applied to the electroabsorption modulator 112 are generated from the same signal source. A phase shifter controls the phase difference between the two signals, thus avoiding the influence of inconsistent external signal frequencies on the two modulators. After the optical pulse enters the phase modulator 120, which is driven by the same frequency RF signal, the phase modulator 120 introduces a periodic sinusoidal chirp into the optical pulse. The delay between the two modulators is introduced by the phase shifter. By adjusting the phase shifter, the phase relationship between the modulators can be changed, controlling the chirp component on the pulse to be as linear as possible, and also changing the sign of the chirp. After passing through the intensity modulator and the phase modulator 120, the DC light obtains a chirp-intensity distribution that is beneficial for subsequent compression, and the frequency components of the leading and trailing edges of the optical pulse change.

[0042] In this embodiment of the invention, an electroabsorption modulated laser 110 and an optical pulse compression component 130 are connected by a phase modulator 120, and the three are placed on the same side of a substrate 140 to form a monolithically integrated, small-sized ultrashort optical pulse source chip. Furthermore, the electroabsorption modulated laser 110 generates a narrower primary optical pulse, and the optical pulse compression component 130 compresses and amplifies the power of the chirped second optical pulse to obtain a narrower target optical pulse. At the same time, the power of the optical pulse can be increased by power amplification, thereby obtaining a high-quality ultrashort optical pulse.

[0043] In this embodiment of the invention, the optical pulse compression component 130 may include different components to compress and amplify the power of the second optical pulse.

[0044] In this embodiment of the invention, the repetition frequency of the ultrashort optical pulse source chip can be adjusted by regulating the electrical signal input from an external radio frequency signal source.

[0045] In one embodiment, the optical pulse compression component 130 includes: a first optical amplifier connected to the phase modulator 120; wherein the first optical amplifier is used to compress and amplify the power of the second optical pulse to obtain the target optical pulse.

[0046] Here, the first optical amplifier (SOA) is used to generate optical gain under the excitation of the driving current, and simultaneously utilizes its dispersion effect to compress the chirped pulses output from the phase modulator 120. The applied excitation current should control the optical amplifier to operate in the linear region, with the optical gain in the cavity greater than the cavity loss, and the laser generating lasing after achieving stable oscillation. Simultaneously, due to the intrinsic dispersion characteristics of the SOA—that is, the propagation speed of the high-frequency components of the pulse is lower than that of the low-frequency components—the negatively chirped pulses are compressed in the SOA, reducing the pulse width. By controlling the phase shifter, a strong linear negative chirp can be introduced into the optical pulse. Since the dispersion characteristics of the SOA are 10 times that of ordinary single-mode fiber... 3 Compared to single-mode fiber, it can compress optical pulses more effectively, enabling on-chip compression. When the length of the first optical amplifier is appropriate, the pulse compression effect is optimal, resulting in chirp-free pulses with ultra-short pulse widths.

[0047] In another embodiment, the optical pulse compression component 130 includes: a chirped Bragg grating and a second optical amplifier, wherein the chirped Bragg grating is connected to the phase modulator 120 and the second optical amplifier respectively; wherein the chirped Bragg grating is used to compress the second optical pulse to obtain a third optical pulse; and the second optical amplifier is used to amplify the power of the third optical pulse to obtain the target optical pulse.

[0048] After passing through the phase modulator 120, the pulsed light passes through the chirped Bragg grating. The chirped DC light then passes through the anomalous (normal) dispersion medium, where the positive (negative) chirp is compensated, forming a raised pulse peak, while the negative (positive) chirp is stretched in time, forming a DC plateau. Light of different frequencies (wavelengths) is reflected at different positions on the chirped Bragg grating, resulting in different optical path lengths and thus dispersion compensation. By designing a variable grating period for the chirped Bragg grating, the dispersion compensation effect can be significantly improved, effectively reducing the length of the optical amplifier. The subsequent second optical amplifier can then compensate for the additional losses caused by light passing through the chirped Bragg grating, increasing optical power.

[0049] In this embodiment of the invention, the material system growth structure of the first optical amplifier and the second optical amplifier includes, from bottom to top, a substrate, a buffer layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper capping layer, and an ohmic contact layer.

[0050] In one embodiment, such as Figure 1 As shown, the electro-absorption modulated laser 110 includes a distributed feedback laser 111 and an electro-absorption modulator 112, wherein the electro-absorption modulator 112 is connected to both the distributed feedback laser 111 and the phase modulator 120; wherein,

[0051] The distributed feedback laser 111 is used to generate DC light;

[0052] The electro-absorption modulator 112 is used to modulate the DC light to obtain the primary optical pulse when the voltage applied to the electro-absorption modulator 112 meets the preset voltage; the preset voltage is used to make the modulation range of the electro-absorption modulator 112 in the nonlinear region.

[0053] It should be noted that the band structure of the distributed feedback laser 111 and the electroabsorption modulator 112 are matched.

[0054] In this embodiment of the invention, the material system growth structure of the distributed feedback laser 111, from bottom to top, includes: a substrate, a buffer layer, a lower confinement layer, an active layer, an upper confinement layer, a grating layer, an upper capping layer, and an ohmic contact layer. The distributed feedback laser 111 controls the wavelength of the emitted laser by designing the grating period. Here, the wavelength of the emitted laser can be any suitable wavelength, such as 1310 nanometers (nm) and 1550 nm. Applying a suitable current excitation during operation can cause the wavelength to lasing out single-longitudinal-mode DC light.

[0055] Here, the applied voltage is a reverse bias voltage (i.e., a negative voltage), and the preset voltage can be a preset negative voltage.

[0056] It should be noted that when the applied voltage is relatively small, the electro-absorption modulator 112 can only play a modulation role. When the applied voltage reaches the preset voltage, the electro-absorption modulator 112 can generate a primary pulse based on DC light.

[0057] In this embodiment of the invention, its gain spectrum range matches that of the distributed feedback laser 111. When the electro-absorption modulator 112 is in operation, applying a certain reverse bias voltage (i.e., negative voltage) and an external radio frequency signal can achieve modulation of DC light. This reverse bias voltage needs to deeply bias the electro-absorption modulator 112 (i.e., apply a relatively large negative voltage) so that the modulation range enters the nonlinear region of its transmission curve. When the applied external radio frequency signal strength is appropriate, the DC light modulated by the electro-absorption modulator 112 will generate a primary optical pulse with a narrow pulse width, which will be extinct in a local area.

[0058] For example, Figure 2 This is a top view schematic diagram of the ultrashort optical pulse source chip provided by the present invention, as shown below. Figure 2 As shown, the top view structure of the ultrashort optical pulse source chip 100 includes: an electro-absorption modulated laser 110, a phase modulator 120, and an optical pulse compression component 130. The electro-absorption modulated laser 110 includes a distributed feedback laser 111 and an electro-absorption modulator 112.

[0059] For example, Figure 3This is a side view of the ultrashort optical pulse source chip provided by the present invention, as shown in the figure. Figure 3 As shown, the ultrashort optical pulse source chip 100 includes: a distributed feedback laser 111, an electroabsorption modulator 112, a phase modulator 120, an optical pulse compression component 130, and a substrate 140.

[0060] In one embodiment, the output waveguide direction of the first optical amplifier has a first preset tilt angle with the cleavage end face of the ultrashort optical pulse source chip.

[0061] Here, the cleavage facet can be understood as the cross-section of the ultrashort optical pulse source chip. This cross-section only represents the material system growth structure of the semiconductor components on both sides of the chip, such as the material system growth structure of the first optical amplifier, or the distributed feedback laser 111.

[0062] Here, the first preset tilt angle can be any suitable angle, such as 7°~9°.

[0063] In one embodiment, the output waveguide direction of the second optical amplifier has a second preset tilt angle with the cleavage end face of the ultrashort optical pulse source chip.

[0064] Here, the second preset tilt angle can be any suitable angle, such as 7°~9°, and the first preset tilt angle can be the same as the second preset tilt angle.

[0065] In this embodiment of the invention, the tilt angles set on the cleavage end faces of the first optical amplifier and the ultrashort optical pulse source chip, and the tilt angles set on the cleavage end faces of the second optical amplifier and the ultrashort optical pulse source chip, are both to prevent end face reflection.

[0066] In one embodiment, the active layer corresponding to the electroabsorption modulated laser 110, the active layer corresponding to the phase modulator 120, and the active layer corresponding to the optical pulse compression component 130 are made of the same active region material.

[0067] In this embodiment of the invention, the electroabsorption modulated laser 110, the phase modulator 120, and the optical amplifier all use the same active region material, and their gain bands are matched.

[0068] In one embodiment, the top of the electroabsorption modulated laser 110, the top of the phase modulator 120, and the top of the optical pulse compression assembly 130 each have their own corresponding P-type electrodes, and an electrical isolation trench is provided between each of the P-type electrodes.

[0069] Here, materials with low dielectric constants, such as polyimide or phenylcyclobutene, can be used to fill the P-type electrode, thereby reducing the parasitic capacitance of the laser and effectively improving the modulation bandwidth.

[0070] Here, the electrical isolation trench can be prepared by methods such as helium (He) ion implantation or etching.

[0071] In this embodiment of the invention, the electrical isolation trench can isolate the driving voltage or current of different functional areas.

[0072] In one embodiment, the P-type electrode is a circular electrode.

[0073] Here, the diameter of the circular electrode can be between 50 micrometers (μm) and 100 μm.

[0074] In this embodiment of the invention, designing the P-type electrode as a circular electrode can improve the high-frequency performance of the ultrashort optical pulse source chip.

[0075] For example, the ultrashort optical pulse source chip includes an electro-absorption modulated laser (EML) 110, which comprises a distributed feedback laser (DFB) 111 and an electro-absorption modulator (EAM) 112. The DFB generates DC light, while the deeply biased EAM is modulated by an RF signal to generate a low duty cycle (around 10%) primary optical pulse. This generates a narrower primary pulse than a Mach-Zehnder modulator structure, allowing for more precise selection of the linear portion of the chirp. A phase modulator 120, based on the electro-optic effect of semiconductors, introduces chirp into the primary pulse. By tuning the phase difference of the RF signals applied to the EAM and PM, the alignment of the primary pulse and the position of the linear chirp, as well as the selection of the chirp direction, can be achieved. The SOA (Optical Amplifier) ​​serves two purposes: firstly, it amplifies light; secondly, because the dispersion coefficient of an SOA is 30 femtoseconds / nanometer / millimeter, while that of optical fiber is 17 picoseconds / nanometer / kilometer, the SOA's dispersion coefficient is six orders of magnitude higher. Therefore, a kilometer-level pulse compression can be achieved using a millimeter-level SOA. Thus, in this application, the SOA serves a dual function of optical amplification and dispersion compensation.

[0076] The ultrashort optical pulse source chip proposed in this invention has the following advantages: the optical amplifier replaces the complex multi-stage fiber compression and shaping system in the prior art, realizing on-chip compression of the optical pulse width, while providing gain for the laser and increasing the power of the optical pulse; the use of an electroabsorption modulator 112 as an intensity modulator generates narrower optical pulses with a smaller base, which is beneficial for subsequent pulse width compression; the chip repetition frequency can be adjusted by external clock control, improving the problem that the repetition frequency of traditional mode-locked lasers is not adjustable due to the cavity structure and is difficult to synchronize with the external clock; it is monolithically integrated, with a small chip size, realizing the complete functions of a complex system architecture on a single chip.

[0077] The present invention also provides an ultrashort optical pulse source device, including the above-mentioned ultrashort optical pulse source chip.

[0078] Here, the ultrashort optical pulse source device can be a device used for communication.

[0079] In this embodiment of the invention, the ultrashort optical pulse source device includes at least one ultrashort optical pulse source chip and a phase shifter. After monolithic integration of the ultrashort optical pulse source, multiple channels are combined. Multiple short pulse source chips are combined into a single output channel via a multi-mode interference coupler (MMI), achieving time-division multiplexing of the pulse signal and effectively improving the repetition frequency and signal transmission capacity of the pulse source. The time-division multiplexing between channels is controlled by the phase shifter.

[0080] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. An ultrashort optical pulse source chip, characterized in that, include: The system comprises an electroabsorption modulated laser 110, a phase modulator 120, an optical pulse compression assembly 130, and a substrate 140. The phase modulator 120 is connected to both the electroabsorption modulated laser 110 and the optical pulse compression assembly 130. The electroabsorption modulated laser 110, the phase modulator 120, and the optical pulse compression assembly 130 are located on the same side of the substrate 140. The electroabsorption modulated laser 110 is used to generate primary optical pulses; The phase modulator 120 is used to introduce chirp into the primary optical pulse to obtain a second optical pulse; The optical pulse compression component 130 is used to compress and amplify the power of the second optical pulse to obtain the target optical pulse; The optical pulse compression component 130 includes a chirped Bragg grating and a second optical amplifier. The chirped Bragg grating is connected to the phase modulator 120 and the second optical amplifier, respectively. The chirped Bragg grating is used to compress the second optical pulse to obtain a third optical pulse. The second optical amplifier is used to amplify the power of the third optical pulse to obtain the target optical pulse.

2. The ultrashort optical pulse source chip according to claim 1, characterized in that, The optical pulse compression component 130 includes: a first optical amplifier, which is connected to the phase modulator 120; wherein... The first optical amplifier is used to compress and amplify the power of the second optical pulse to obtain the target optical pulse.

3. The ultrashort optical pulse source chip according to claim 1 or 2, characterized in that, The electro-absorption modulated laser 110 includes a distributed feedback laser 111 and an electro-absorption modulator 112, wherein the electro-absorption modulator 112 is connected to both the distributed feedback laser 111 and the phase modulator 120; wherein... The distributed feedback laser 111 is used to generate DC light; The electro-absorption modulator 112 is used to modulate the DC light to obtain the primary optical pulse when the voltage applied to the electro-absorption modulator 112 meets the preset voltage; the preset voltage is used to make the modulation range of the electro-absorption modulator 112 in the nonlinear region.

4. The ultrashort optical pulse source chip according to claim 2, characterized in that, The output waveguide direction of the first optical amplifier has a first preset tilt angle with the cleavage end face of the ultrashort optical pulse source chip.

5. The ultrashort optical pulse source chip according to claim 1, characterized in that, The output waveguide direction of the second optical amplifier has a second preset tilt angle with the cleavage end face of the ultrashort optical pulse source chip.

6. The ultrashort optical pulse source chip according to claim 1 or 2, characterized in that, The active layer corresponding to the electroabsorption modulated laser 110, the active layer corresponding to the phase modulator 120, and the active layer corresponding to the optical pulse compression component 130 are made of the same active region material.

7. The ultrashort optical pulse source chip according to claim 1 or 2, characterized in that, The top of the electroabsorption modulated laser 110, the top of the phase modulator 120, and the top of the optical pulse compression assembly 130 each have their own corresponding P-type electrodes, and an electrical isolation trench is provided between each of the P-type electrodes.

8. The ultrashort optical pulse source chip according to claim 7, characterized in that, The P-type electrode is circular in shape.

9. An ultrashort optical pulse source device, characterized in that, Includes the ultrashort optical pulse source chip as described in any one of claims 1 to 8.

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