Preparation method of anti-glare glass

Abstract

The invention discloses a preparation method of anti-glare glass. The preparation method comprises the following steps: cleaning the surface of a glass substrate; coating a film layer on the surface of the glass substrate; coating photoresist on the film layer; carrying out exposure, development and film layer etching treatment; the longitudinal depth of the glass is directionally etched through dry etching, and longitudinal and transverse etching are simultaneously carried out through a wet etching mode, so that a certain depth-to-width ratio is obtained, and the anti-glare area is increased; or, the surface of the glass is subjected to preliminary morphology construction through a wet method, and then accurate depth control and feature shaping are achieved in a specific area through dry etching. The anti-glare performance can be effectively improved and is close to the disordered diffusion effect of frosting; the surface texture distribution is more uniform, and the defects that in a traditional frosting process, flash points are not uniform, and the surface microstructure is difficult to accurately control are overcome; according to the invention, a microstructure is directly formed on the glass substrate by adopting an etching process, so that the reliability requirements in various harsh use environments can be met.

Description

Technical Field

[0001] The present invention relates to the technical field of anti-glare glass, and in particular to a method for preparing anti-glare glass. Background Art

[0002] With the rapid development of display technology, anti-glare (AG) glass, as a key optical component to enhance the display effect, has experienced continuous innovation and evolution in its manufacturing process. Currently, the preparation methods of AG glass mainly include chemical frosting process, yellow light exposure and development process, and spraying AG process. These methods all show their respective advantages and limitations in practical applications.

[0003] The traditional chemical frosting process uses chemical reagents such as frosting powder to wet-etch the glass surface to form a randomly distributed micron-scale rough structure. Although this process has the characteristics of low cost and simple operation, due to the randomness of chemical reactions, it is difficult to precisely control the size and distribution of the surface micro-structure, thereby affecting the optical performance and batch consistency of the product. At the same time, the rough surface formed by the frosting process is prone to accumulating dirt and has certain defects.

[0004] The yellow light exposure and development process draws on the lithography technology in semiconductor manufacturing. By coating a photoresist on the glass surface, selective exposure and development are carried out using a mask (MASK), and finally the micro-structure pattern is transferred to the glass substrate by wet-etching. This method can achieve precise control of the size, shape and arrangement of the micro-structure. However, due to the isotropic characteristics of the traditional wet-etching process, there are obvious limitations in forming high aspect ratio micro-structures, which directly affects the anti-glare effect and flash point control of AG glass.

[0005] The spraying AG process forms a functional layer with a scattering effect by spraying a coating containing specific components on the glass surface. This method has a simple process and high efficiency, but the adhesion and durability of the coating often cannot meet the requirements of high-end display products, and it is prone to aging or peeling in some application environments, resulting in a limited service life.

[0006] With the development of display technology towards high definition and large size, the market's performance requirements for AG glass are constantly increasing. Especially in the fields of medical display and professional image processing, higher requirements are put forward for the anti-glare effect and flash point control. However, the existing pure wet-etching process encounters bottlenecks in improving the performance of micro-structures and is difficult to achieve both excellent anti-glare performance and low flash point characteristics at the same time.

[0007] With the rapid development of display technology, AG glass is playing an increasingly important role in enhancing the display effect. However, the existing AG glass preparation technologies still have obvious deficiencies in terms of optical performance, display effect, etc., and it is difficult to meet the increasingly demanding performance requirements in the high-end display field. Currently, the mainstream preparation methods such as sandblasting etching method, yellow light exposure and development etching method, and spraying method are all facing technical bottlenecks that are difficult to break through; the existing technologies have the following defects:

[0008] 1. The sandblasting etching method uses sandblasting powder with disordered particle size distribution to etch the glass surface, which has random distribution characteristics, so it has excellent anti-glare performance. However, due to the inconsistent particle size of the sandblasting powder itself and the difficulty in accurate control, the etching process inevitably brings problems such as uneven flash points and unstable surface texture roughness. Especially when emphasizing the visual experience in a high-brightness environment, this uneven distribution will cause local strong reflections or glare points, which will further affect the consistency and aesthetics of the overall product. In addition, the sandblasting powder from different batches or different suppliers may have differences in particle morphology and chemical properties, further amplifying the volatility of the production process. During the preparation process, the fluctuations of its process parameters (such as temperature, concentration, time, etc.) will cause significant differences in product quality, restricting the realization of large-scale production.

[0009] 2. The yellow light exposure and development etching method draws on the lithography technology of the semiconductor industry and realizes precise control of microstructures through the MASK pattern. This method can form microstructures with uniform size and controllable distribution, so it performs well in flash point control. However, due to the regularity of the MASK pattern, the arrangement of the formed microstructures is relatively orderly and lacks sufficient randomness, resulting in an anti-glare effect inferior to that of the sandblasting process. Especially when observing from a large angle, the regularly arranged microstructures may produce optical interference phenomena, affecting the display quality. At the same time, due to the isotropic characteristics of the traditional wet etching process, it is difficult to form an ideal aspect ratio, which further limits the improvement of anti-glare performance.

[0010] 3. The spraying method forms a functional layer by spraying a material containing specific particles on the glass surface. Although this additive manufacturing process is easy to operate, it has serious reliability problems. The most prominent defect is that its wear resistance is much lower than that of subtractive manufacturing processes (such as sandblasting method and yellow light exposure and development etching method). This is because the sprayed coating, as a functional coating attached to the glass surface, has a weaker bonding force with the substrate than the microstructures formed through chemical reactions or physical etching. In practical applications, the sprayed coating is easily damaged or peeled off due to mechanical actions such as friction and impact, resulting in a significant reduction in the service life of the product. In addition, it is difficult to ensure the uniformity and repeatability of the spraying process, affecting the stability of product quality.

[0011] A method for preparing AG anti-glare glass disclosed in Patent CN119143400A includes the following steps: performing surface treatment on a glass substrate; uniformly coating a functional coating on the surface of the glass substrate; uniformly coating a photoresist on the surface of the functional coating, and performing soft baking treatment after coating; using a high-precision MASK for graphic design and exposure to accurately transfer the designed micro-structure pattern onto the photoresist layer; performing development treatment after exposure to remove the unexposed part of the photoresist and form a predetermined pattern on the glass substrate; curing the developed photoresist pattern to ensure its sufficient corrosion resistance and stability during subsequent etching; performing etching treatment to remove the unprotected functional coating and glass substrate to form an accurate micro-structure pattern; using a photoresist removal technique to remove the residual photoresist to obtain the final micro-structure pattern; performing functionalization treatment on the surface of the micro-structure pattern through fluorination treatment; the anti-glare effect needs to be improved. Summary of the Invention

[0012] Aiming at the deficiencies of the prior art, the present invention provides a method for preparing anti-glare glass to achieve the purpose of obtaining better anti-glare effect and flash point.

[0013] In order to solve the above technical problems, the technical solutions adopted by the present invention are as follows:

[0014] The method for preparing anti-glare glass includes the following steps:

[0015] Step 1: Cleaning the surface of the glass substrate;

[0016] Step 2: Coating a film layer on the surface of the glass substrate;

[0017] Step 3: Coating a photoresist on the film layer;

[0018] Step 4: Performing exposure, development, and film layer etching treatment;

[0019] Step 5: Through dry etching, directionally etching the longitudinal depth of the glass, and then through wet etching, etching both longitudinally and laterally simultaneously to obtain a certain aspect ratio and increase the anti-glare area; or, first performing preliminary topography construction on the glass surface through wet method, and then using dry etching to achieve precise depth control and feature shaping in specific areas.

[0020] Further or preferably:

[0021] The technological process in Step 5 is as follows:

[0022] Dry etching the glass → Removing the photoresist → Wet etching the glass 1 → Removing the film layer → Wet etching the glass 2;

[0023] Or, dry etching the glass → Wet etching the glass 1 → Removing the photoresist → Removing the film layer → Wet etching the glass 2;

[0024] Alternatively, strip photoresist → dry-etch glass → wet-etch glass 1 → strip the film layer → wet-etch glass 2;

[0025] Alternatively, strip photoresist → wet-etch glass 1 → dry-etch glass → strip the film layer → wet-etch glass 2;

[0026] Alternatively, wet-etch glass 1 → strip photoresist → dry-etch glass → strip the film layer → wet-etch glass 2;

[0027] Alternatively, wet-etch glass 1 → dry-etch glass → strip photoresist → strip the film layer → wet-etch glass 2.

[0028] In step 1, first perform a preliminary rinse with deionized water, and cooperate with a soft brush or ultrasonic means to remove dust and organic impurities on the substrate surface; alternatively, add a cleaning agent or solvent for degreasing and deoiling treatment, the treatment temperature range is 20 - 100 °C, and the treatment time is 1 - 10 min.

[0029] In step 2, the thickness range of the film layer is 50 - 3000 Å, and the film layer is formed by vacuum coating or evaporation.

[0030] In step 3, the thickness range of the photoresist is 0.5 - 20 μm; the coating method is slit coating, the coating speed is controlled between 10 - 200 mm / s, and the spray pressure is controlled between 0.03 - 0.98 MPa; after coating, perform a soft bake treatment, the soft bake temperature is controlled at 50 - 200 °C, and the time is 30 - 300 seconds.

[0031] In step 4, in the exposure process, select a contact, proximity or projection exposure machine according to the batch and resolution requirements; the exposure energy is between 50 - 500 mJ / cm 2 between.

[0032] In step 4, the development time is about 30 - 90 s, and maintain a constant temperature in the range of 20 - 30 °C. The conductivity of the developer should be maintained in the range of 1 - 80 mS / cm; after development, perform a post-bake treatment, the temperature range is 50 - 300 °C, and the duration is 1 - 20 min.

[0033] In step 4, before etching the film layer, it is necessary to cure the photoresist pattern, perform thermal curing or UV curing in the temperature range of 50 - 500 °C for 1 - 60 min to enhance the corrosion resistance and mechanical strength of the photoresist pattern and prevent deformation or photoresist stripping during the etching process.

[0034] In step 5, the dry-etching process is as follows:

[0035] The dry etching step uses inductively coupled plasma technology to achieve precise microstructural processing of the anti-glare glass. Dry etching is to use plasma etching technology to etch the glass directionally.

[0036] In terms of process parameter settings, the vacuum system needs to be maintained at a vacuum state of 0.1 - 10 Torr to ensure the stability of the plasma and the full dissociation of the gas. In terms of gas flow rate, the flow rate of the main etching gas (C4F6 and SF6) is controlled within the range of 50 - 200 sccm, the flow rate of the inert gas (such as Ar or He) is set at 50 - 150 sccm, and if O2 needs to be added, it is controlled at 5 - 20 sccm.

[0037] In the wet etching stage of step 5, the microstructure is etched in all directions using chemical reagents, achieving a key transformation from a simple longitudinal depression to a composite three-dimensional structure. The wet etching etches the width and depth simultaneously in the horizontal and vertical directions.

[0038] Compared with the prior art, the present invention has the following advantages:

[0039] The present invention provides a method for preparing AG glass by combining dry and wet etching. By innovatively combining dry etching and wet etching processes, significant breakthroughs have been achieved in anti-glare performance, flash point control, and wear resistance, providing a new technical solution for the high-end display field. Specifically, it is reflected in the following aspects:

[0040] In terms of anti-glare performance, the present invention gives full play to the process advantages of the combination of dry and wet methods. First, a basic structure with a high aspect ratio is formed by dry etching, and then fine adjustment is carried out by wet etching with an optimized ratio. Finally, an anti-glare effect equivalent to that of the traditional sandblasting process is achieved. This composite process not only provides a larger scattering area but also ensures the stability and repeatability of product performance through precise parameter control, solving the problem of uncontrollable microstructures in the traditional sandblasting process.

[0041] In terms of flash point control, the present invention uses the same photolithography technology as the yellow light exposure and development process as the pattern transfer means. Through the precise design and transfer of the MASK pattern, the uniform distribution of the microstructure is achieved. Combining the synergistic effect of dry and wet etching, while maintaining excellent anti-glare performance, the flash point phenomenon is effectively suppressed. This precisely controllable preparation method enables the product to still maintain an excellent display effect in a high-brightness display environment, significantly improving the user experience.

[0042] In terms of wear resistance, the present invention is completely based on subtractive processes, overcoming the inherent defect of insufficient coating adhesion in the spraying method. In particular, the high aspect ratio structure formed by dry etching provides an ideal basis for subsequent wet etching, enabling the finally formed microstructures to be firmly bonded to the glass substrate. Experiments show that the AG glass prepared by the present invention performs the best in wear resistance tests, far superior to traditional spraying processes and also exceeding the products prepared by single sandblasting or yellow light processes.

[0043] In addition, the present invention also has obvious advantages in process controllability. By precisely controlling the process parameters of dry and wet etching, the aspect ratio, morphological features, and distribution density of the microstructures can be flexibly adjusted to meet the optical performance requirements of different application scenarios; at the same time, the process has good repeatability and high stability, which is conducive to large-scale production of products. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] The following briefly describes the content expressed in each drawing of this specification and the marks in the drawings:

[0045] Figure 1 It is a schematic diagram of the preparation process flow 1 of the present invention.

[0046] Figure 2 It is a schematic diagram of the preparation process flow 2 of the present invention.

[0047] Figure 3 It is a schematic diagram of the preparation process flow 3 of the present invention.

[0048] Figure 4 It is a schematic diagram of the preparation process flow 4 of the present invention.

[0049] Figure 5 It is a schematic diagram of the preparation process flow 5 of the present invention.

[0050] Figure 6 It is a schematic diagram of the preparation process flow 6 of the present invention.

[0051] Figure 7 It is a schematic diagram of the preparation process flow of yellow light AG of the present invention.

[0052] Figure 8 It is a schematic diagram before dry etching of the present invention.

[0053] Figure 9 It is a schematic diagram after dry etching of the present invention.

[0054] Figure 10 It is a schematic diagram after dry etching + wet etching of the present invention.

[0055] Figure 11 It is Figure 10 A schematic diagram of removing photoresist.

[0056] Figure 12Schematic diagram after removing the blocking layer of the present invention.

[0057] Figure 13 Schematic diagram for comparison of the dry-wet etching structure and the wet etching structure of the present invention. Detailed implementation manners

[0058] The following further elaborates in detail on the specific implementation manners of the present invention by describing the embodiments with reference to the accompanying drawings.

[0059] The method for preparing the anti-glare glass of the present invention includes the following steps:

[0060] Step 1: Cleaning the surface of the glass substrate;

[0061] Step 2: Coating a film layer on the surface of the glass substrate;

[0062] Step 3: Coating a photoresist on the film layer;

[0063] Step 4: Performing exposure, development, and film layer etching treatments;

[0064] Step 5: Through dry etching, directionally etching the longitudinal depth of the glass, and then through wet etching, etching both longitudinally and laterally simultaneously to obtain a certain depth-width ratio and increase the anti-glare area; or, first perform preliminary topography construction on the glass surface by wet etching, and then use dry etching to achieve precise depth control and feature shaping in specific areas.

[0065] The present invention has made crucial improvements on the basis of the traditional yellow light exposure, development, and etching method. In the first process route, first use dry etching to perform directional longitudinal etching on the glass, thereby pre-shaping certain depth structural features on the glass surface. Subsequently, wet etching continues to etch in both longitudinal and lateral directions, laterally expanding and further deepening the existing vertical grooves, thereby obtaining a relatively large depth-width ratio. Through this "dry-first and then wet" composite etching process, both the lateral and longitudinal dimensions are taken into account.

[0066] The present invention also innovatively proposes a second process route, that is, first use wet etching to perform preliminary topography construction on the glass surface to form a basic microstructure with a certain opening width, and then use dry etching technology to perform precise longitudinal etching on the bottom of the microstructure to form a multi-level structure with pits in pits. This "wet-first and then dry" process sequence can, while maintaining the lateral expansion advantage of wet etching, further increase the depth through the high directionality of dry etching, and achieve fine control of the bottom area of the microstructure.

[0067] The following effects are finally achieved: ① At the depth level, the grooves and structures are more obvious, the overall surface area increases, which can effectively improve the anti-glare performance and approach the disordered diffusion effect of sandblasting; ② With the synergistic effect of mask exposure, the surface texture ensures a more uniform distribution of microstructures, overcoming the defects of inconsistent flash points and difficult precise control of surface microstructures in the traditional sandblasting process; ③ Compared with the spraying method that only covers a functional coating on the glass surface, the present invention uses an etching process to directly form microstructures on the glass substrate. This surface texture derived from the material body has natural wear resistance advantages and can meet the reliability requirements under various harsh usage environments.

[0068] A preferred specific example of the present invention is as follows:

[0069] The present invention proposes an innovative dry-wet etching combined process. This method combines the directional advantage of dry etching and the uniformity characteristic of wet etching, and realizes the precise control of the microstructure morphology through the synergistic effect of multiple steps. That is, on the basis of the traditional yellow light exposure and development etching method, a breakthrough in process performance is achieved by introducing a dry etching step. According to the cooperation mode of the film layer and the photoresist and the sequence of dry and wet etching, it is divided into six main process routes (as Figures 1 to 6 shown: Processes 1 to 6):

[0070] Process 1: Glass substrate → Coating film layer → Coating photoresist → Exposure → Development → Film layer etching → Dry etching of glass → Removing photoresist → Wet etching of glass 1 → Removing film layer → Wet etching of glass 2

[0071] Process 2: Glass substrate → Coating film layer → Coating photoresist → Exposure → Development → Film layer etching → Dry etching of glass → Wet etching of glass 1 → Removing photoresist → Removing film layer → Wet etching of glass 2

[0072] Process 3: Glass substrate → Coating film layer → Coating photoresist → Exposure → Development → Film layer etching → Removing photoresist → Dry etching of glass → Wet etching of glass 1 → Removing film layer → Wet etching of glass 2

[0073] Process 4: Glass substrate → Coating film layer → Coating photoresist → Exposure → Development → Film layer etching → Removing photoresist → Wet etching of glass 1 → Dry etching of glass → Removing film layer → Wet etching of glass 2

[0074] Process 5: Glass substrate → Coating film layer → Coating photoresist → Exposure → Development → Film layer etching → Wet etching of glass 1 → Removing photoresist → Dry etching of glass → Removing film layer → Wet etching of glass 2

[0075] Process 6: Glass substrate → Coating film layer → Coating photoresist → Exposure → Development → Film layer etching → Wet etching of glass 1 → Dry etching of glass → Removing photoresist → Removing film layer → Wet etching of glass 2

[0076] The common feature of Process 1 and Process 2 is that both the film layer and the photoresist are retained during the dry etching stage to form a double protection structure. That is, the film layer is first deposited on the glass substrate, and the photoresist is coated and patterned thereon, and then the microstructures are precisely transferred by dry etching. This route gives full play to the advantages of the double protection of the photoresist and the film layer, ensuring the high fidelity and morphological stability of the microstructures after dry etching. The difference between the two processes lies in the timing of photoresist removal: in Process 1, the photoresist is removed immediately after dry etching, while in Process 2, the photoresist is removed only after the completion of dry etching and the first wet etching.

[0077] The remarkable feature of Process 3 is that the photoresist is removed before dry etching, and only the film layer is used as the etching mask. This process route simplifies the manufacturing process and reduces the possible adverse effects of the photoresist in the dry etching environment, such as thermal deformation or degradation. By only using the film layer to protect the selected area, the required morphological requirements can also be obtained in dry etching.

[0078] Processes 4, 5 and 6 are to perform dry etching after wet etching. These routes first use wet etching to preliminarily construct the morphology of the glass surface, and then use dry etching technology to achieve precise depth control and feature shaping in specific areas. This "reverse" processing method provides new possibilities for the regulation of the microstructure morphology. By first forming the initial contour through wet etching and then using the directional characteristics of dry etching for fine regulation, special surface morphologies that are difficult to achieve by conventional processes can be obtained.

[0079] The step of removing the photoresist has a certain degree of flexibility in the above processes, and the timing of removing the photoresist layer can be selected according to actual needs to adapt to the optical and mechanical performance requirements of each stage. The above all belong to the scope of protection of this patent.

[0080] The present invention preferably adopts a combined dry-wet etching process; based on the yellow light exposure and development, this method first uses dry etching with strong directionality to increase the aspect ratio of the microstructures, and then uses wet etching to optimize the surface morphology, achieving precise control of the geometric features of the microstructures, thereby obtaining high-performance AG (anti-glare) glass.

[0081] The method for preparing AG glass by combining dry and wet etching proposed by the present invention has made remarkable breakthroughs in terms of anti-glare performance, flash point control and wear resistance by innovatively combining dry etching and wet etching processes, providing a new technical solution for the high-end display field. The specific manifestations are as follows:

[0082] 1. In terms of anti-glare performance, the present invention fully exploits the process advantages of the combination of dry and wet methods. First, a basic structure with a high aspect ratio is formed by dry etching, and then fine adjustment is carried out by wet etching with an optimized ratio, finally achieving an anti-glare effect equivalent to that of the traditional sandblasting process. This composite process not only provides a larger scattering area but also ensures the stability and repeatability of product performance through precise parameter control, solving the problem of uncontrollable microstructures in the traditional sandblasting process.

[0083] 2. In terms of flash point control, the present invention uses the same photolithography technology as the yellow light exposure and development process as the pattern transfer means. Through the precise design and transfer of the MASK pattern, a uniform distribution of microstructures is achieved. Combining the synergistic effect of dry and wet etching, while maintaining excellent anti-glare performance, the flash point phenomenon is effectively suppressed. This precisely controllable preparation method enables the product to still maintain an excellent display effect in a high-brightness display environment, significantly improving the user experience.

[0084] 3. In terms of wear resistance, the present invention is completely based on the subtractive process, overcoming the inherent defect of insufficient coating adhesion in the spraying method. Especially the high aspect ratio structure formed by dry etching provides an ideal basis for subsequent wet etching, making the finally formed microstructures firmly bonded to the glass substrate. Experiments show that the AG glass prepared by the present invention performs the best in the wear resistance test, far superior to the traditional spraying process and also exceeding the products prepared by a single sandblasting or yellow light process.

[0085] In addition, the present invention also has obvious advantages in terms of process controllability. By precisely controlling the process parameters of dry and wet etching, the aspect ratio, morphology characteristics, and distribution density of the microstructures can be flexibly adjusted to meet the optical performance requirements of different application scenarios. At the same time, this process has good repeatability and high stability, which is conducive to the large-scale production of products.

[0086] As Figures 7 to 13 shown, the specific process of the dry-wet etching combination method is as follows (the process details and technical parameters of each step will be elaborated in detail below to facilitate understanding of the implementation details of the entire process and its impact on the performance of the final product):

[0087] A. Glass substrate treatment

[0088] First, perform a preliminary rinse with deionized water, and cooperate with a soft brush or ultrasonic means to remove dust and organic impurities on the substrate surface; when necessary, a low-concentration cleaning agent or solvent can be added for degreasing and deoiling treatment. The treatment temperature range is 20 - 100 °C, and the treatment time is 1 - 10 min.

[0089] B. Coating layer

[0090] The film layer plays a crucial role in the present invention. It serves as a mask for subsequent dry etching and is also a key element for precisely controlling the microstructure morphology in the wet etching process. The material selection of the film layer can include various types such as ITO (indium tin oxide), Cr (chromium), Mo (molybdenum), SiO2 (silicon dioxide), and Si3N4 (silicon nitride). These materials have different characteristics and can be flexibly selected according to actual process requirements and cost considerations to ensure that the film layer provides necessary protection and performance support during the etching process.

[0091] The thickness of the film layer is usually controlled within (angstroms), and the specific value depends on the process conditions of subsequent dry etching and the requirements for the aspect ratio of the microstructure. Although a thicker film layer can provide better protection, it also increases the etching difficulty and material cost; a thinner film layer may be damaged during the etching process, affecting the integrity of the microstructure.

[0092] The preparation methods of the film layer mainly adopt vacuum coating or evaporation techniques, including but not limited to physical vapor deposition (PVD), chemical vapor deposition (CVD), and sputtering coating. These techniques can form a uniform and dense thin film on the surface of the glass substrate and have good adhesion.

[0093] Specifically, the key parameters of each film layer are as follows: For ITO, argon (Ar) is usually used for deposition, gas flow rate: 320 - 400 sccm, vacuum degree is controlled at 0.5 Pa, coating temperature range is 150 - 300 °C, power is 6 - 8 kW, and gas supply ratio is 1:0.3. For the Cr film layer, the same gas is used, flow rate is 320 - 400 sccm, vacuum degree is maintained at 0.5 Pa, temperature range is 200 - 300 °C, power is set at 5 - 15 kW, and gas ratio is 1:0. The preparation of the Mo film layer needs to be carried out under a vacuum degree of 0.65 Pa, an Ar gas flow rate of 350 - 600 sccm, and an O2 gas flow rate of 10 - 40 sccm, temperature is controlled at 150 - 200 °C, power is 6 - 12 kW, and the ratio is 10 - 40 sccm. For the SiO2 film layer, Ar gas is used, gas flow rate is 100 - 180 sccm, vacuum degree is 0.5 Pa, coating temperature range is 200 - 300 °C, and power is 10 - 20 kW. Finally, during the preparation of Si3N4, 200 - 320 sccm of N2 gas and 100 - 150 sccm of Ar gas need to be introduced, vacuum degree is 0.6 Pa, temperature range is 200 - 300 °C, power is 20 - 45 kW, and gas ratio is 25 - 60 sccm.

[0094] Note: The ratio range is determined according to the film layer characteristics.

[0095] C. Coating photoresist

[0096] The choice of photoresist can be made according to actual process requirements, using positive or negative photoresist materials. Positive photoresist has increased solubility in the exposed area and is removed after development; negative photoresist is the opposite, with the exposed area crosslinked and cured and retained after development. Its thickness is usually controlled within the range of 0.5 - 20 μm to ensure the resolution and accuracy of subsequent pattern transfer.

[0097] The coating method uses slit coating. This method is suitable for rapid coating of large - area glass. The coating speed is usually controlled between 10 - 200 mm / s to ensure uniform coverage. During the coating process, the GAP (the gap between the glue layer and the substrate) is maintained within the range of 50 - 300 μm, and the spraying pressure is controlled within the range of 0.03 - 0.98 MPa. After coating, soft baking treatment is usually required to remove the solvent in the photoresist and improve the adhesion and stability of the photoresist. The soft baking temperature is generally controlled at 50 - 200 °C, and the time is 30 - 300 seconds. After coating, the thickness and uniformity of the photoresist can be detected by means such as a film thickness tester or an optical microscope to ensure that the requirements of subsequent lithography processes are met.

[0098] D. MASK Graphic Design and Exposure

[0099] In the dry - wet etching combination process of the present invention, the MASK graphic design and exposure link play a crucial role in the dimensional accuracy and distribution uniformity of the final microstructure. First, according to the optical requirements of the target AG glass, when designing the MASK pattern, various forms such as dot matrix, line array, honeycomb, or polygon can be selected, and the aperture is usually limited within the range of 1 - 200 μm. According to the arrangement of patterns of different sizes, diversified arrangement methods such as normal distribution, exponential distribution, bimodal distribution, or random distribution can be achieved, so as to achieve specific scattering and optical effects for different application scenarios.

[0100] In the exposure process, a contact, proximity, or projection exposure machine is selected according to batch and resolution requirements. The exposure energy is usually between 50 - 500 mJ / cm 2 ², and the specific value is jointly determined by the characteristics of the photoresist, the wavelength of the light source, and the resolution level. The commonly used UV wavelengths are mainly i - line (365 nm); h - line (405 nm); g - line (436 nm). The appropriate wavelength should be determined according to specific application requirements and the photosensitive matching of the photoresist. If multi - layer exposure is required, the alignment error is controlled within ±0.5 - 1 μm through a double - sided alignment system to ensure the precise matching of multi - layer patterns.

[0101] E. Development

[0102] When developing, a developer with a specific concentration (such as TMAH (tetramethylammonium hydroxide) or KOH (potassium hydroxide) solution) is used. The developing time is generally about 30 - 90 s, and it is maintained at a constant temperature within the range of 20 - 30 °C to obtain a stable developing rate and reliable pattern fidelity. In addition, the conductivity of the developer should be maintained within the range of 1 - 80 mS / cm to ensure uniform chemical reactions during the developing process. After development, post-baking treatment is also required, with a temperature range of 50 - 300 °C and a duration of 1 - 20 min, to further enhance the corrosion resistance of the photoresist and stabilize the pattern.

[0103] In actual operation, either the immersion method or the spray method can be used for development. The immersion method improves the development uniformity through slow stirring and is easier to control the overall rate; while the spray method shortens the development cycle but has higher requirements for the flow rate and nozzle accuracy. After development, the pattern edges and line widths are usually inspected using an optical system, in-line monitoring, or off-line CD-SEM (critical dimension scanning electron microscope) to ensure sufficient development and no over-etching. After multiple rinses with deionized water and rapid drying, post-baking can be carried out at 50 - 300 °C for 1 - 20 min as needed to further enhance the corrosion resistance of the photoresist pattern. Through the above development process, the photoresist layer can reproduce the MASK pattern with high precision.

[0104] F. Film Etching

[0105] Before film etching, the photoresist pattern usually needs to be cured. Specifically, thermal curing or UV curing can be carried out within the temperature range of 50 - 500 °C for 1 - 60 min to enhance the corrosion resistance and mechanical strength of the photoresist pattern and prevent deformation or delamination during the etching process. After the pattern curing is completed, the film can be etched.

[0106] The material selection of the film can include ITO, Cr, Mo, SiO2, and Si3N4. For different types of films, corresponding etching solutions are used for treatment: for ITO, Cr, and Mo films, a mixed solution of nitric acid or hydrochloric acid is mainly used, with the concentration controlled between 1 - 10%; for SiO2 films, hydrofluoric acid is used, and its concentration is usually 5 - 20%; while for Si3N4 films, phosphoric acid is used, with the concentration range of 10 - 30%. The specific etching time depends on the film thickness (usually ) and the depth and sidewall accuracy of the required pattern.

[0107] During the etching process, it is necessary to observe and measure in a timely manner to ensure that the film pattern is completely transferred while avoiding over-etching and damaging the substrate. Optical microscopes can be used for rapid detection to evaluate critical dimensions and pattern edges. After etching is completed, deionized water or corresponding cleaning agents should be immediately used for multi-stage cleaning to remove etching residues, and finally dried with air or dried at low temperature in a clean environment. Through the above steps, a film pattern consistent with the photoresist pattern can be obtained on the glass surface, providing precise area protection and guidance for subsequent dry etching or wet etching processes.

[0108] G. Dry Etching Process

[0109] The dry etching step uses inductively coupled plasma (ICP) technology to achieve precise microstructural processing of AG glass. Based on traditional glass etching techniques, this process is particularly suitable for high aspect ratio microstructural requirements. The etching process is carried out in a dry etching machine (such as a reactive ion etching machine RIE or an inductively coupled plasma etching machine ICP). Among them, the ICP etching machine generates high-density plasma through inductive coupling and can achieve high selectivity etching of various materials such as silicon, silicon dioxide, and metals.

[0110] The core of dry etching is to use plasma etching technology to etch the glass directionally. Usually, a combination of fluorine-based gases (CF4, C4F8, SF6, etc.) and inert gases (Ar, He) is selected. Usually, a mixed gas of C4F6 + H2 + Ar or C4F6 + CH2F2 + Ar is used as the etching gas. Among them, C4F6 serves as the supply source of the CF X group to ensure a stable supply of the CFX group during the etching process, and the generated CF X is responsible for chemically reacting with SiO2 on the glass surface; H2 and CH2F2 serve as the F - removers. By combining with free F - ions to generate HF gas, the selectivity of the etching reaction is effectively controlled, thereby directionally regulating the longitudinal etching depth of the glass; Ar mainly plays a physical bombardment role, using ion bombardment to promote the reaction between the CF X group and SiO2, and improving the etching rate.

[0111] In terms of process parameter settings, the vacuum system needs to be maintained at a vacuum state of 0.1 - 10 Torr to ensure the stability of the plasma and the full dissociation of the gas. In terms of gas flow rate, the flow rates of the main etching gases (C4F6 and SF6) are controlled within the range of 50 - 200 sccm, the flow rate of the inert gas (such as Ar or He) is set at 50 - 150 sccm, and if O2 needs to be added, it is controlled at 5 - 20 sccm. The precise control of these parameters is crucial for the etching rate and quality. Too low a flow rate will result in insufficient supply of reactants and limited etching rate, while too high a flow rate may cause active particles to be discharged before fully reacting, reducing the etching effect. Therefore, it is necessary to optimize the flow rate settings through experiments to find the appropriate optimal range. Power setting is also crucial. The ICP source power is usually between 2000 - 5000 W, which can effectively increase the plasma density and directly affect the etching rate. The RF bias power is adjusted within the range of 1000 - 3000 W to enhance the driving force of ion bombardment and achieve better anisotropy. Too high a power may cause damage to the photoresist or film layer, which makes it necessary to ensure the balance between etching efficiency and material integrity when adjusting the power.

[0112] In the dry etching step of the present invention, after the glass substrate undergoes the previous MASK pattern transfer and film layer opening treatment, only the aperture "a" as shown in Figure 8 is formed on the surface only at the film layer position, and the glass body has not been directly etched. By using plasma technology to perform directional longitudinal etching on the glass, a certain depth "h" can be dug inside the glass on the premise that the aperture "a" remains generally unchanged, as shown in Figure 9 From "a" to "h", the most essential change brought about by dry etching is presented, realizing the transformation from a simple "opening" to an actual "concave structure", and the area that originally only had a film layer opening gradually evolves into a longitudinal channel or concave area with a controllable depth in the glass body.

[0113] From the comparison between Figure 8 and Figure 9 it can be seen that the microstructure after dry etching is not simply an expansion in the "a" direction, but while ensuring that the aperture width (a) remains roughly unchanged, a certain depth (h) is longitudinally excavated into the glass. The technical principle behind this is that dry etching utilizes the synergistic effect of each component in the C4F6 + H2 + Ar (or C4F6 + CH2F2 + Ar) plasma:

[0114] ① After C4F6 is excited by high-energy plasma, it ionizes and decomposes into CF X groups, and these CF X radicals are the main active species that chemically react with SiO2 on the glass surface and chemically combine with or break the bonds of SiO2.

[0115] ②H2 or CH2F2 as an "ion quencher" that inhibits the consumption of F - free radicals, generating HF volatiles in the etching region, weakening the F - etching of non-target areas, thus achieving "directional" etching.

[0116] ③Ar ions are vertically bombarded on the etching region under the acceleration of the electric field, which can not only strip the reaction products but also enhance the anisotropic etching effect of the sidewalls, allowing the etching path to penetrate more deeply longitudinally.

[0117] The directional etching obtained by this synergistic effect keeps the aperture "a" basically at its original scale, avoiding excessive lateral expansion, but forms a longitudinal cavity with a high depth in the range of sub-microns to several microns (the etching depth h can reach 0.1 - 10 μm, or even deeper). The high aspect ratio structure formed by dry etching provides an ideal morphological basis for subsequent wet etching. This etching strategy that preferentially ensures the longitudinal depth not only significantly expands the effective scattering area but also reserves sufficient space for the fine regulation of the subsequent microstructures, thereby achieving the improvement of the anti-glare performance and the effective suppression of the flash point.

[0118] From the microscopic morphology, the structural characteristics after dry etching are mainly reflected in two aspects: the sidewalls show a relatively straight profile, with obvious anisotropic characteristics. Due to the synergistic effect of Ar ion bombardment and CFx free radicals, steps on the micron scale may be formed. The bottom will show nano-scale microscopic roughness, which is mainly due to the ion bombardment effect and the local reaction rate difference during the plasma etching process. By adjusting parameters such as the etching temperature (20 - 300 °C), gas flow ratio, radio frequency power, and working pressure, the sidewall inclination angle and bottom morphology can be controlled to a certain extent.

[0119] H. Wet etching 1

[0120] As Figure 10 shown, after dry etching, the present invention enters the wet etching stage. This step uses chemical reagents to etch the microstructure in all directions, achieving a key transformation from a simple longitudinal depression to a composite three-dimensional structure. In the figure, the parameter "b" identifies the etching width and depth of the wet etching simultaneously in the horizontal and vertical directions. This synchronous expansion is a direct manifestation of the isotropic characteristics of the wet etching.

[0121] In the final etched morphology, by comparing the morphology after dry etching ( Figure 9 ) with the structure after wet etching ( Figure 10)The following significant changes can be observed: ① The opening width of the microstructure expands from the original initial "a" to "a + 2b", resulting in a significant increase in the lateral dimension; ② The depth further increases from "h" of dry etching to "h + b", strengthening the overall aspect ratio; ③ The originally relatively straight sidewalls show an obvious smooth transition after wet etching, and the overall contour of the microstructure is smoother and more continuous. This morphological evolution lays the foundation for subsequent optimization of optical properties (Note: In the figure, straight lines are directly used for convenience of display effect, but it does not affect the actual etched morphological effect).

[0122] The wet etching solution is prepared using a single acid or mixed acid system. It includes but is not limited to HF (hydrofluoric acid) or NH4F (ammonium fluoride) as the main etchant, and inorganic or organic acids such as hydrochloric acid, nitric acid, sulfuric acid, and acetic acid can be selectively added as auxiliary acidic components. For example, HF / NH4HF2 mainly provides the basic etching ability for the silicate structure (mainly SiO2), and HCl / HNO3 / H2SO4 / HAc, etc. are mainly used to adjust the etching rate, buffer reaction by-products, and fine-tune the surface roughness to help obtain a more uniform etched morphology. The process temperature is controlled within the range of 20 - 50 °C. This temperature range can not only ensure sufficient reaction activity but also avoid reaction runaway and bubble generation that may be caused by too high a temperature. The wet etching equipment can be selected as a tank-type or horizontal etching machine according to requirements.

[0123] I. Photoresist stripping

[0124] Use photoresist removal technology to remove the residual photoresist and obtain the final microstructure pattern. The method of removing the photoresist can be wet removal or dry removal, and the removal time is 1 - 15 min. This step ensures that there is no residual substance on the surface to prepare for subsequent processing.

[0125] As Figure 11 shown, after the completion of dry etching and the first wet etching, the photoresist has been completely removed. It should be particularly noted that the photoresist removal step in the present invention has high process flexibility and can be adjusted according to actual needs in the process flow. The example in the picture only presents one situation. For example, the process steps of photoresist stripping → wet etching of glass → film stripping can also be adopted. This flexibility makes the process more adaptable, and no matter what order is adopted, it belongs to the protection scope of this patent.

[0126] J. Film stripping

[0127] For the film stripping layer, corresponding wet etching solutions can be selected according to the properties of the film layer. For ITO, Cr, and Mo film layers, a mixed solution of nitric acid or hydrochloric acid is mainly used, with the concentration controlled between 1-10%; for SiO2 film layers, hydrofluoric acid is used, and its concentration is usually 5-20%; for Si3N4 film layers, phosphoric acid is used, with the concentration range of 10-30%. The equipment can be selected as a tank-type or horizontal etching machine according to the production scale. Specific etching parameters (such as temperature and time) depend on the film layer material, thickness, and the characteristics of the etching solution used. Usually, the etching temperature is controlled between 20-50°C, and the etching time is adjusted according to the actual situation until the film layer is completely removed. To avoid damage to the glass surface caused by over-etching, it is necessary to monitor the etching process in real time and stop the reaction in a timely manner.

[0128] As Figure 12 shown, after the removal of the film layer, a specific microstructural morphology is formed on the surface of the glass substrate. The longitudinal depth "h" of the microstructure, together with the transverse widths "a" and "b", constitutes the aspect ratio of the entire structure. The calculation formula is: aspect ratio = (h + b) / (a + 2b). This formula indicates that by increasing the longitudinal depth (h), the overall aspect ratio can be effectively improved, thereby expanding the effective area of anti-glare.

[0129] After being processed by this series of processes, the finally formed microstructure has excellent anti-glare performance, achieving an effect similar to that of the traditional sandblasting method, but with better flash point control than the sandblasting process.

[0130] As Figure 13 shown, Figure Ⅰ : Schematic diagram of the dry etching + wet etching (after removing photoresist and film stripping layer) structure; Figure Ⅱ : Schematic diagram of the wet etching (after removing photoresist and film stripping layer) structure.

[0131] As shown in the figure, there are significant differences in the microstructural morphology between the dry-wet etching combination process (Figure I) and the simple wet etching (Figure II). For the dry-wet combination process, a relatively deep etching depth is first formed in the longitudinal direction through dry etching, and then the wet etching is used to expand simultaneously in the transverse and longitudinal directions. The planar visualization area of the finally obtained microstructure can be expressed as (a + 2b)*(h + b), where "a + 2b" represents the final aperture in the transverse direction, and "h + b" reflects the superposition of the longitudinal depth and the sidewall expansion. In contrast, the planar visualization area of the microstructure obtained by ordinary wet etching is (a + 2b)*b, that is, a pit with a depth of b and a total transverse width of a + 2b is formed on the glass surface, and its effective scattering area is relatively reduced.

[0132] In terms of anti-glare, due to the fact that the microstructures etched by the dry-wet combined process are deeper in the longitudinal depth, their surface area approximately doubles with the increase of the etching depth. A larger surface area means that under strong light irradiation, the incident light will experience more scattering and attenuation inside and on the side walls of the pits, thus effectively weakening the intensity of direct light and reducing glare. Such geometric expansion plays a crucial role. The wide and deep enough pit structure not only scatters light in multiple directions but also disrupts the coherent path of light to a certain extent, making the glare be fully weakened.

[0133] In addition to the process of first dry etching and then wet etching, Figures 4 to 6 The flowchart showing wet etching 1 first and then dry etching is as follows. This process shows significant differences in the control of microstructural morphology and the adjustment of optical properties:

[0134] In terms of morphology, in the wet-first-then-dry process, the initial wet etching uses its isotropic property to form initial pits with a wide opening and a gentle contour on the glass surface. At this time, the microstructures already have basic scattering functions, but the aspect ratio is relatively limited. Subsequently, the dry etching further increases the depth of the central region on the basis of these pre-formed pits through the action of highly directional plasma, forming a "wide-mouth and deep-bottom" composite structure. This structure combines the large-area scattering characteristics of wet etching and the high aspect ratio characteristics of dry etching. In contrast, the traditional dry-first process first forms deep and narrow vertical channels through plasma directional etching, and then wet etching expands the width of these channels, finally forming a "narrow-mouth and gradually wider" conical or funnel-shaped structure. These two different morphology evolution paths lead to essential differences in the scattering characteristics of the final microstructures.

[0135] From the perspective of optical properties, the microstructures formed by the wet-first-then-dry process have multi-level scattering characteristics. The shallow microstructures formed by the initial wet etching provide preliminary surface scattering ability, which is suitable for dealing with large-angle incident light; while the deep structures added by the subsequent dry etching enhance the scattering ability of small-angle incident light. This hierarchical scattering mechanism enables the final AG glass to maintain excellent anti-glare performance under different lighting conditions.

[0136] K. Wet etching 2

[0137] The wet etching 2 stage is an important step to achieve the optimization of the final microstructure morphology and performance. This process aims to further adjust the formed microstructures to meet the final required haze requirements.

[0138] Similar to wet etching 1, the etching solution used in wet etching 2 includes, but is not limited to, single acids or mixed acids such as HF and NH4HF2, and inorganic or organic acids such as hydrochloric acid, nitric acid, sulfuric acid, and acetic acid can be selectively added as auxiliary acidic components. During the etching process, it is necessary to regularly check the liquid concentration, temperature, and etching rate in order to adjust the process parameters according to the real-time data. By maintaining proper agitation of the liquid, the accumulation of reaction products can be avoided, further improving the etching uniformity and efficiency.

[0139] The present invention proposes an innovative combined dry and wet etching process in the field of AG glass preparation technology. The core technical features and protection points are mainly reflected in the following aspects:

[0140] First, the fundamental innovation of the present invention lies in the preparation method that combines dry etching and wet etching. This composite process breaks through the limitations of traditional single etching processes and pioneeringly proposes a new preparation approach for AG glass. Therefore, any method that uses dry etching technology during the AG glass preparation process, regardless of its specific process parameters or equipment selection, falls within the protection scope of this patent.

[0141] Second, the present invention innovatively breaks through the fixed sequence limitation between dry etching and wet etching in traditional processes, and clearly includes within the protection scope the processes where dry etching can be carried out either before or after wet etching. This flexible process layout provides a wider technical path for the precise control of microstructural morphology and enables the selection of the optimal etching sequence according to the performance requirements of different application scenarios. Whether using the traditional "dry first, wet later" process route or the innovative "wet first, dry later" process route, as long as it embodies the core idea of combining dry and wet etching, it falls within the protection scope of this patent.

[0142] Third, the present invention particularly emphasizes the precise control scheme for the aspect ratio of the microstructures. Specifically, it is manifested as follows: First, an initial structure with a depth of 0.1 - 10 μm is formed longitudinally through dry etching, and then wet etching is used to achieve two-way three-dimensional etching in both the longitudinal and transverse directions (5 - 100 μm). This technical scheme of enhancing the anti-glare effect by increasing the aspect ratio is an important protected content of the present invention. All preparation methods using similar parameter ranges and process ideas are within the protection scope of this patent.

[0143] Fourth, the present invention expands the selection of film layer materials. In the combined dry and wet etching process, all technical solutions that use materials such as ITO, Cr, Mo, SiO2, and Si3N4 as film layers and combine with dry etching technology fall within the protection scope of the present invention. Whether using a single one of the above materials alone or using a composite of multiple materials to construct the film layer structure, as long as it combines with dry etching technology to prepare AG glass, it is within the core protection scope of the present invention.

[0144] The above four key technical features are interrelated and indispensable, jointly constituting the complete technical solution of the present invention. These features not only reflect the innovation of the present invention but also provide a basis for the subsequent technological development. By comprehensively protecting these key points, the technical advantages and patent value of the present invention in the field of AG glass preparation are ensured.

[0145] The above is only an illustration of the preferred embodiments of the present invention, and the above technical features can be arbitrarily combined to form multiple embodiment schemes of the present invention.

[0146] The present invention has been described exemplarily above in conjunction with the accompanying drawings. Obviously, the specific implementation of the present invention is not limited by the above-mentioned manner. As long as various non-substantive improvements are made by adopting the concept and technical solution of the present invention, or the concept and technical solution of the present invention are directly applied to other occasions without improvement, they are all within the protection scope of the present invention.

Claims

1. A method for preparing anti-glare glass, characterized in that: The following steps are involved: Step 1: Cleaning the surface of the glass substrate; Step 2: coating a film layer on the surface of the glass substrate; Step 3: coating photoresist on the film layer; Step 4: Exposure, development and film etching; Step 5: Directly etch the vertical depth of the glass through dry etching, and then etch the vertical and horizontal directions simultaneously through wet etching to achieve a certain aspect ratio and increase the anti-glare area; alternatively, first perform preliminary morphology construction on the glass surface through wet etching, and then use dry etching to achieve precise depth control and feature shaping in specific areas.

2. The method for preparing anti-glare glass according to claim 1, characterized in that: The process flow in step 5 is as follows: Dry etching glass → photoresist stripping → wet etching glass 1 → film stripping → wet etching glass 2; Alternatively, dry etching glass → wet etching glass 1 → photoresist stripping → film stripping → wet etching glass 2; Alternatively, photoresist stripping → dry etching glass → wet etching glass 1 → film stripping → wet etching glass 2; Alternatively, photoresist stripping → wet etching glass 1 → dry etching glass → film stripping → wet etching glass 2; Alternatively, wet etching glass 1 → stripping photoresist → dry etching glass → stripping film layer → wet etching glass 2; Alternatively, wet-etch glass 1 → dry-etch glass → strip photoresist → strip film layer → wet-etch glass 2.

3. The method for preparing anti-glare glass according to claim 1, characterized in that: In step 1, deionized water is first used for preliminary rinsing, and dust and organic impurities on the surface of the substrate are removed by a soft brush or ultrasonic means; alternatively, a cleaning agent or solvent is added for degreasing and deoiling treatment, and the treatment temperature range is 20-100° C. and the treatment time is 1-10 minutes.

4. The method for preparing anti-glare glass according to claim 1, characterized in that: In the step 2, the thickness of the film layer ranges from 50 to 3000 Å, and the film layer is formed by vacuum coating or evaporation.

5. The method for preparing anti-glare glass according to claim 1, characterized in that: In the step 3, the photoresist thickness ranges from 0.5 to 20 μm; the coating method adopts slit coating, the coating speed is controlled between 10 and 200 mm / s, and the spray pressure is controlled between 0.03 and 0.98 MPa; after the coating is completed, a soft baking treatment is performed, and the soft baking temperature is controlled at 50 to 200° C. for 30 to 300 seconds.

6. The method for preparing anti-glare glass according to claim 1, characterized in that: In step 4, during the exposure process, a contact, proximity or projection exposure machine is selected according to the batch and resolution requirements; the exposure energy is 50 to 500 mJ / cm 2 between.

7. The method for preparing anti-glare glass according to claim 1, characterized in that: In step 4, the developing time is about 30 to 90 seconds, and the constant temperature is maintained in the range of 20 to 30° C., and the conductivity of the developer should be maintained in the range of 1 to 80 mS / cm; after the development is completed, a post-baking treatment is performed at a temperature range of 50 to 300° C. and a duration of 1 to 20 minutes.

8. The method for preparing anti-glare glass according to claim 1, characterized in that: In step 4, the photoresist pattern needs to be cured before the film layer is etched, and thermal curing or UV curing is performed in the temperature range of 50 to 500° C. for 1 to 60 minutes to enhance the corrosion resistance and mechanical strength of the photoresist pattern and prevent deformation or debonding during the etching process.

9. The method for preparing anti-glare glass according to claim 1, characterized in that: In step 5, the dry etching process is: The dry etching step uses inductively coupled plasma technology to achieve precise microstructural processing of anti-glare glass; dry etching is to use plasma etching technology to directional etch the glass; In terms of process parameter setting, the vacuum system needs to be maintained at a vacuum state of 0.1-10 Torr to ensure the stability of the plasma and the full dissociation of the gas; in terms of gas flow, the flow of the main etching gas (C4F6 and SF6) is controlled in the range of 50-200 sccm, the flow of inert gas (such as Ar or He) is set at 50-150 sccm, and O2, if needed, is controlled at 5-20 sccm.

10. The method for preparing anti-glare glass according to claim 1, characterized in that: In step 5, during the wet etching stage, chemical reagents are used to etch the microstructure in all directions, achieving the key transformation from a simple longitudinal depression to a composite three-dimensional structure. The wet etching simultaneously etches the width and depth in the horizontal and vertical directions, thereby improving the aspect ratio to enhance the anti-glare effect.

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