Gas distribution device and CVD (Chemical Vapor Deposition) equipment

Abstract

The invention provides a gas distribution device and a CVD (Chemical Vapor Deposition) device. The gas distribution device comprises a gas inlet pipeline and a gas homogenizing layer, the gas uniformizing layer comprises a gas outlet structure located between the top wall and the bottom wall and a gas uniformizing assembly located on the inner side of the gas outlet structure. The gas uniformizing layer further sequentially comprises a first space located on the inner side of the gas uniformizing assembly and a second space located between the gas uniformizing assembly and the gas outlet structure. The air outlet structure annularly surrounds the second space, the air outlet structure comprises a plurality of air outlet holes evenly distributed in the circumferential direction of the air outlet structure, the air uniformizing assembly comprises a first air uniformizing structure annularly arranged, and the first air uniformizing structure is provided with a plurality of first airflow channels communicating the inner side and the outer side of the first air uniformizing structure in the circumferential direction of the first air uniformizing structure. By arranging the first gas uniformizing structure in the gas uniformizing layer and adjusting the extending direction of the outlet of the first gas flow channel of the first gas uniformizing structure to deflect towards the circumferential direction of the first gas uniformizing structure, the gas flow passing through the first gas uniformizing structure is promoted to flow in the circumferential direction, the uniformity of the gas flow in the circumferential direction is improved, and the gas uniformizing effect is improved.

Description

Technical Field

[0001] The present invention relates to a gas distribution device and a CVD device. Background Art

[0002] In the field of semiconductor processing, process gases need to be introduced into a reaction chamber through a nozzle. The nozzle is provided with a gas inlet and a plurality of gas outlets. Among them, the process gas flows into the nozzle from the gas inlet, and a gas equalizing structure is provided in the nozzle so that the process gas flowing in from the gas inlet can uniformly flow out of the nozzle from the plurality of gas outlets to improve the uniformity of the process gas concentration at various places in the reaction chamber.

[0003] However, the gas equalizing structure in the existing nozzle has a poor gas equalizing effect on the process gas, it is difficult to ensure the consistency of the process gas ejected from the gas outlets at various places of the nozzle, and it is very difficult to ensure the gas outlet uniformity of the plurality of gas outlets. Summary of the Invention

[0004] The purpose of the present invention is to provide a gas distribution device and a CVD device, which have the advantage of high uniformity in gas distribution between the gas outlets.

[0005] To achieve the above purpose, the present invention provides a gas distribution device, which includes:

[0006] An intake pipeline;

[0007] A gas equalizing layer, the gas equalizing layer is arranged in a disc shape, including a top wall and a bottom wall arranged in a disc shape, an air outlet structure located between the top wall and the bottom wall, and a gas equalizing component located inside the air outlet structure and arranged in a ring shape. Along the gas flow direction of the gas distribution device, the gas equalizing layer further sequentially includes a first space located inside the gas equalizing component, and a second space located between the gas equalizing component and the air outlet structure. The intake pipeline is in fluid communication with the first space;

[0008] The air outlet structure is arranged in a ring around the second space, and the air outlet structure includes a plurality of air outlet holes uniformly arranged along its circumference;

[0009] The gas equalizing component at least includes a first gas equalizing structure arranged in a ring shape. The first gas equalizing structure is provided with a plurality of first air flow channels communicating the inside and outside of the first gas equalizing structure along its circumference. Taking the direction from its inside to the end of the air flow channel as the extending direction, the first air flow channel includes a first extending direction at its inlet and a second extending direction at its outlet. Define the radial direction of the gas equalizing layer at the corresponding outlet as the second radial direction. The second extending direction is inclined relative to the second radial direction, and the second extending directions of the plurality of first air flow channels are inclined to the same side of the second radial direction.

[0010] Optionally, the air distribution component includes a second air distribution structure disposed between the air outlet structure and the first air distribution structure and arranged in a ring shape. A plurality of second air flow channels are provided along the circumferential direction of the second air distribution structure. The second air flow channel includes a third extension direction at its inlet and a fourth extension direction at its outlet. Define the air inlet direction at the inlet of the second air distribution structure as the opposite direction of the third extension direction at the corresponding inlet. Define the radial direction at the corresponding inlet of the air distribution layer as the third radial direction. The air inlet direction of the second air flow channel is obliquely arranged with respect to the corresponding third radial direction, and the air inlet directions of the plurality of second air flow channels are obliquely arranged toward the same side of the third radial direction; wherein, the air inlet direction and the second extension direction are respectively biased toward different sides with respect to their corresponding third radial direction and second radial direction.

[0011] Optionally, the angle between the second extension direction and the corresponding second radial direction is a, and 15° < a < 60°; the angle between the air inlet direction of the second air flow channel and the corresponding third radial direction is b, and 15° < b < 60°.

[0012] Optionally, define the radial direction at the outlet of the second air flow channel of the air distribution layer as the fourth radial direction. The fourth extension direction and the corresponding fourth radial direction have an included angle d, and the included angle d is greater than the included angle a.

[0013] Optionally, the first air distribution structure includes an annular first partition plate and a plurality of first ventilation holes opened along the circumferential direction of the first partition plate and arranged evenly. The first air flow channel is configured as the first ventilation hole; the second air distribution structure includes an annular second partition plate and a plurality of second ventilation holes opened along the circumferential direction of the second partition plate and arranged evenly. The second air flow channel is configured as the second ventilation hole; the first ventilation hole and the second ventilation hole are at different heights of the air distribution layer.

[0014] Optionally, the first air distribution structure includes a plurality of first stoppers. The plurality of first stoppers are arranged evenly along the circumferential direction. A flow gap is formed between two adjacent first guide stoppers. The first air flow channel is configured as the flow gap.

[0015] Optionally, the second air distribution structure includes a plurality of second stoppers. The plurality of second stoppers are arranged evenly along the circumferential direction. A second flow gap is formed between two adjacent second stoppers. The second air flow channel is configured as the second flow gap; the second stopper includes an inner wall surface located between the inlets of adjacent second air flow channels. The inner wall surface is configured as an arc-shaped wall surface protruding toward the center of the air distribution layer.

[0016] Optionally, define the inlet direction of the first gas flow channel as the opposite direction of the first extension direction, define the radial direction at the inlet of the first gas flow channel in the uniform gas layer as the first radial direction, and there is an included angle c between the inlet direction of the first gas flow channel and the corresponding first radial direction, where 0° ≤ c < 60°.

[0017] Optionally, the included angle between the second extension direction and the corresponding second radial direction is a, where 15° < a < 60°; the included angle c is smaller than the included angle a.

[0018] The present invention also provides a CVD device, including a reaction chamber for CVD reaction to occur, and the reaction chamber includes the gas distribution device as described above to supply reaction gas inward.

[0019] In summary, compared with the prior art, the gas distribution device and the CVD device provided by the present invention have the following beneficial effects:

[0020] In the gas distribution device and the CVD device of the present invention, by arranging a first gas uniform structure in the uniform gas layer and adjusting the extension direction at the outlet of the first gas flow channel of the first gas uniform structure to be deflected towards the circumferential direction of the first gas uniform structure, the gas flow passing through the first gas uniform structure is promoted to flow in the circumferential direction, improving the uniformity of the gas flow in this circumferential direction and thus improving the gas uniform effect. Description of the Drawings

[0021] Figure 1 It is a schematic structural diagram of Embodiment 1 of the gas distribution device of the present invention.

[0022] Figure 2 It is a top view of Embodiment 1 of the gas distribution device of the present invention.

[0023] Figure 3 It is a schematic structural diagram of the CVD device of the present invention.

[0024] Figure 4 It is a schematic structural diagram of Embodiment 2 of the gas distribution device of the present invention.

[0025] Figure 5 It is a left view of Embodiment 2 of the gas distribution device of the present invention.

[0026] Figure 6 It is Figure 5 a cross-sectional view taken along the A-A direction in

[0027] Figure 7 It is a schematic structural diagram of Embodiment 3 of the gas distribution device of the present invention.

[0028] Figure 8 It is a top view of Embodiment 3 of the gas distribution device of the present invention.

[0029] Description of the Reference Numerals:

[0030] Gas distribution device 10, intake pipeline 100, gas equalizing layer 200, gas outlet structure 210, gas outlet holes 211, gas equalizing component 220, first gas equalizing structure 221, first partition 2211, first ventilation holes 2212, first stop block 2213, first flow gap 2214, second gas equalizing structure 222, second partition 2221, second ventilation holes 2222, second stop block 2223, second flow gap 2224, first space 230, second space 240, annular space 250, CVD equipment 30, top cover 310, base 320, heating component 330 Detailed implementation manners

[0031] The following will combine the attached drawings in the embodiments of the present invention Figure 1 ~attached drawings Figure 8 to elaborate in detail on the technical solutions, structural features, achieved objectives and effects in the embodiments of the present invention.

[0032] It should be noted that the attached drawings adopt a very simplified form and all use non-precise scales, only for the purpose of conveniently and clearly assisting in explaining the embodiments of the present invention, and are not used to limit the limiting conditions for implementing the present invention. Therefore, they do not have technical substance significance. Any modification of the structure, change of the proportional relationship or adjustment of the size, without affecting the effects that the present invention can produce and the objectives that can be achieved, should still fall within the scope covered by the technical content disclosed by the present invention.

[0033] It should be noted that in the present invention, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variant thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements not only includes those elements clearly listed, but also includes other elements not clearly listed, or also includes elements inherent to such process, method, article or device.

[0034] As Figure 1 and Figure 2 shown, the present invention provides a gas distribution device 10. The gas distribution device 10 includes an intake pipeline 100 (such as Figure 3As shown in the figure, there is a gas - uniforming layer 200. The intake pipeline 100 is used to guide the gas to be distributed into the gas - uniforming layer 200 of the gas distribution device 10. The gas - uniforming layer 200 is arranged in a disc shape, including a top wall (not shown in the figure) and a bottom wall (not shown in the figure) arranged in a disc shape, an air - outlet structure 210 located between the top wall and the bottom wall, and a gas - uniforming component 220 located inside the air - outlet structure 210 and arranged in a ring shape. Along the gas - flow direction of the gas distribution device 10, the gas - uniforming layer 200 further sequentially includes a first space 230 located inside the gas - uniforming component 220 and a second space 240 located between the gas - uniforming component 220 and the air - outlet structure 210. The intake pipeline 100 is in fluid communication with the first space 230. After the process gas enters the first space 230 through the intake pipeline 100, the process gas flows from the first space 230 to the gas - uniforming component 220, is made uniform in the circumferential direction by the gas - uniforming component 220 and then flows to the second space 240. The process gas made uniform in the circumferential direction by the gas - uniforming component 220 in the second space 240 flows out of the gas distribution device 10 through the air - outlet structure 210, so as to improve the circumferential uniformity of the process gas when passing through the air - outlet structure 210.

[0035] The air - outlet structure 210 is arranged in a ring surrounding the second space 240. The air - outlet structure 210 includes a plurality of air - outlet holes 211 uniformly arranged along its circumferential direction, and the distances between the air - outlet holes 211 and the gas - uniforming component 220 are the same. In this embodiment, the air - outlet structure 210 includes an annular side wall, and a plurality of air - outlet holes 211 are formed in the side wall. Along the circumferential direction of the air - outlet structure 210, the plurality of air - outlet holes 211 are uniformly distributed along the side wall of the air - outlet structure 210, so as to improve the uniformity of the process gas when flowing out of the air - outlet structure 210.

[0036] The gas - uniforming component 220 at least includes a first gas - uniforming structure 221 arranged in a ring shape. The first gas - uniforming structure 221 is provided with a plurality of first air - flow channels communicating the inside and the outside of the first gas - uniforming structure 221 along its circumferential direction. The process gas in the first space 230 flows to the second space 240 through the plurality of first air - flow channels arranged along the circumferential direction of the first gas - uniforming structure 221. In this embodiment, as Figure 1 and Figure 2 shown in the figure, the first gas - uniforming structure 221 includes a plurality of first stoppers 2213. The plurality of first stoppers 2213 are uniformly arranged along the circumferential direction. A first flow gap 2214 is formed between two adjacent first stoppers 2213. The first air - flow channel is configured as the first flow gap 2214, and the process gas in the first space 230 flows to the outside of the first gas - uniforming structure 221 through the first flow gap 2214 between two adjacent first stoppers 2213.

[0037] Define the extending direction as the direction from the inside to the end of the air flow channel. The first air flow channel includes a first extending direction at its inlet and a second extending direction at its outlet. Define the radial direction at the outlet of the uniform air layer 200 corresponding to the first air flow channel as the second radial direction. The second extending direction is arranged obliquely with respect to the second radial direction, and the second extending directions of multiple first air flow channels are deflected to the same side of the second radial direction. So that the process gas flowing out of the first air flow channel has a momentum of circumferential rotation, prompting the process gas passing through the first air flow channel to accelerate and diffuse circumferentially, so as to improve the circumferential uniformity of the process gas downstream of the first uniform air structure 221. Define the inlet direction of the first air flow channel as the opposite direction of the first extending direction, define the radial direction at the inlet of the uniform air layer 200 at the inlet of the first air flow channel as the first radial direction, and the inlet direction of the first air flow channel and the first radial direction of the uniform air layer 200 at the corresponding inlet have an included angle c, 0°≤c<60°. In this embodiment, when the process gas enters the first gas flow channel, under the guidance of the first stop block 2213, the process gas flows along the first gas flow channel.

[0038] The uniform air component 220 further includes a second uniform air structure 222 which is arranged between the air outlet structure 210 and the first uniform air structure 221 and is annularly arranged. A plurality of second air flow channels communicating the inner and outer sides of the second uniform air structure 222 are arranged along the circumferential direction of the second uniform air structure 222. The second air flow channel includes a third extending direction at its inlet and a fourth extending direction at its outlet. Define the air flow inlet direction at the inlet of the second uniform air structure 222 as the opposite direction of the third extending direction at the corresponding inlet, and define the radial direction at the corresponding inlet of the uniform air layer 200 as the third radial direction, that is, the third radial direction of the uniform air layer at the inlet of the second air flow channel. The air flow inlet direction of the second air flow channel is arranged obliquely with respect to the corresponding third radial direction, and the air flow inlet directions of multiple second air flow channels are deflected to the same side of the third radial direction. Among them, the air flow inlet direction of the second air flow channel and the second extending direction are respectively deflected to different sides with respect to their corresponding third radial direction and second radial direction, that is, after the gas flows out of the first air flow channel, it is less likely to enter the second air flow channel, so as to prompt the gas to more easily form a circumferential air vortex after flowing out of the first air flow channel, improving its circumferential air uniform effect. In addition, the outlet directions of the first air flow channel and the second air flow channel deviate from the radial direction in different directions, so as to form circumferential air vortices in different directions between the first uniform air structure 221 and the second uniform air structure 222 and between the second uniform air structure 222 and the air outlet structure 210, improving the air uniform effect.

[0039] The overall gas equalization process of the gas distribution device 10 of the present invention is as follows: The process gas is first guided into the first space 230 through the intake pipeline 100. After the process gas reaches the first space 230, as the amount of process gas in the first space 230 increases, the air pressure in the first space 230 rises. Due to the internal and external pressure difference of the first gas equalization structure 221, the process gas flows towards the first gas equalization structure 221 surrounding the first space 230. The first gas equalization structure 221 includes a plurality of first stoppers 2213 evenly distributed in the circumferential direction. A first flow gap 2214 configured as a first gas flow channel is formed between two adjacent first stoppers 2213. The second extension direction at the outlet of the first gas flow channel is radially deflected relative to the gas equalization layer 200 at the outlet of the corresponding first gas flow channel. The process gas flows into the first gas flow channel from the first space 230 along the first extension direction and then flows out of the first gas flow channel along the second extension direction and enters the annular space 250 between the first gas equalization structure 221 and the second gas equalization structure 222. Due to the guiding effect of the first gas flow channel, the air flow has a rotational momentum. If the air flow in the annular space 250 between the first gas equalization structure 221 and the second gas equalization structure 222 is uneven, the rotational momentum of the air flow will cause the air flow to quickly fill the area with a lower air flow density, thereby improving the uniformity of the air flow density in the annular space 250 between the first gas equalization structure 221 and the second gas equalization structure 222. After the process gas flows through the first gas flow channel, the uniformity of the process gas outside the first gas equalization structure 221 will be improved compared to the process gas inside the first gas equalization structure 221. When the air pressure in the annular space 250 rises, due to the pressure difference between the inside and outside of the second gas equalization structure 222, the air flow will flow towards the second gas equalization structure 222, thereby performing secondary gas equalization. And the outflow direction of the first gas flow channel makes the air flow have a first tangential component velocity tangent to the circumferential direction of the annular space 250. The greater this component velocity or the more deviated the inflow direction of the second gas flow channel is from the above-mentioned first tangent, the more it will promote the air flow to flow in the circumferential direction of the annular space 250 and improve the uniformity of the gas in the annular space 250. When the overall pressure in the annular space 250 rises so that the internal and external air pressure difference of the second gas equalization structure 222 exceeds the threshold value, the process gas in the annular space 250 flows towards the second gas equalization structure 222 for gas equalization, thereby improving the overall gas equalization effect of the gas distribution device 10.

[0040] In the first air-uniform structure 221, the angle between the second extension direction and the corresponding second radial direction is a, 15° <a<60°,在本实施例中,第一气流通道沿直线延伸,夹角a小于第一气流通道的入口方向与匀气层200在对应的入口处的第一径向之间的夹角c。第二匀气结构222的第二气流通道的气流入口方向与对应的第三径向之间的夹角为b,且15°<b<60°。以使得气流在流出第一匀气结构221后具有更大的促使气流在内旋转的动量,从而提高对工艺气体的匀气效果。

[0041] The radial direction of the gas-uniform layer 200 at the outlet of the second air flow channel is defined as the fourth radial direction, and the fourth extension direction and the fourth radial direction of the gas-uniform layer 200 at the corresponding outlet have an angle d, and the angle d is greater than the angle a, and the angle d between the fourth extension direction and the fourth radial direction is greater than the angle a between the second extension direction of the first gas-uniform structure 221 and the second radial direction, so that the airflow has a larger tangential component velocity along the circumference at the corresponding position after flowing out of the second gas-uniform structure 222 than after flowing out of the first gas-uniform structure 221, which is more conducive to the circumferential redistribution of the airflow after passing through the second gas-uniform structure 222, thereby improving the gas-uniform effect.

[0042] In this embodiment, the second gas uniformity structure 222 includes a plurality of second blocks 2223, the plurality of second blocks 2223 are evenly arranged along the circumferential direction, a second flow gap 2224 is formed between two adjacent second blocks 2223, and the second gas flow channel is configured as the second flow gap 2224. The process gas between the first gas uniformity structure 221 and the second gas uniformity structure 222 flows toward the second space 240 through the second flow gap 2224 between the second blocks 2223, and finally flows out of the gas distribution device 10 through the gas outlet hole 211 of the gas outlet structure 210.

[0043] like Figure 3 As shown, this embodiment also provides a CVD (Chemical Vapor Deposition) device 30, including a top cover 310, a base 320, a heating assembly 330 and a reaction chamber for CVD reaction. The heating assembly 330 is used to heat the temperature of the reaction chamber to a temperature suitable for the reaction. The reaction chamber includes a gas distribution device 10 of this embodiment, and the gas distribution device 10 is used to provide uniform reaction gas to various parts of the reaction chamber.

[0044] Example 2

[0045] The same parts of this Embodiment 2 as those of Embodiment 1 will not be repeated, and only the different parts will be described. In Embodiment 1, the first gas homogenizing structure 221 includes a plurality of first stoppers 2213, and the second gas homogenizing structure 222 includes a plurality of second stoppers 2223. In Embodiment 2, the first gas homogenizing structure 221 includes an annular first partition 2211, and the second gas homogenizing structure 222 includes an annular second partition 2221.

[0046] As Figures 4 - 6 shown, the first gas homogenizing structure 221 includes an annular first partition 2211, and a plurality of first ventilation holes 2212 that are formed along the circumferential direction of the first partition 2211 and are evenly arranged. The second gas homogenizing structure 222 includes an annular second partition 2221, and second ventilation holes 2222 that are formed along the circumferential direction of the second partition 2221 and are evenly arranged. In this embodiment, the first gas flow channel is configured as the first ventilation hole 2212, and the second gas flow channel is configured as the second ventilation hole 2222. The gas inlet direction of the first gas flow channel is obliquely arranged with respect to the first radial direction of the gas homogenizing layer 200 at the inlet of the corresponding first gas flow channel, and the gas inlet directions of the plurality of first gas flow channels are obliquely arranged toward the same side of the first radial direction; the gas inlet direction of the second gas flow channel is obliquely arranged with respect to the third radial direction of the gas homogenizing layer 200 at the inlet of the corresponding second gas flow channel, and the gas inlet directions of the plurality of second gas flow channels are obliquely arranged toward the same side of the third radial direction. Among them, the gas inlet direction and the second extension direction of the second gas flow channel are respectively biased toward different sides of the third radial direction to enhance the circumferential gas homogenizing effect between the first gas homogenizing structure 221 and the second gas homogenizing structure 222. In addition, the second extension direction of the first gas flow channel and the fourth extension direction of the second gas flow channel deviate from different sides of the second radial direction and the fourth radial direction at the corresponding positions of the gas homogenizing layer 200, so as to form cyclones in different directions between the first gas homogenizing structure 221 and the second gas homogenizing structure 222 and between the second gas homogenizing structure 222 and the gas outlet structure 210, respectively, improving the gas homogenizing effect.

[0047] The process gas flows from the first space 230 through the first ventilation holes 2212 on the first partition 2211 into the annular space 250 between the first gas homogenizing structure 221 and the second gas homogenizing structure 222, and then flows into the second space 240 through the second ventilation holes 2222 on the second partition 2221, and finally flows out of the gas distribution device 10 through the air outlet holes 211 of the air outlet structure 210. The first ventilation holes 2212 and the second ventilation holes 2222 are located at different heights of the gas homogenizing layer 200, avoiding the gas flowing out of the first ventilation holes 2212 staying in the space between the first gas homogenizing structure 221 and the second gas homogenizing structure 222 for too short a time and directly flowing out through the second ventilation holes 2222 into the second space 240, improving the gas homogenizing effect between the first gas homogenizing structure 221 and the second gas homogenizing structure 222, and finally improving the uniformity of the process gas everywhere.

[0048] The present embodiment also provides a CVD (Chemical Vapor Deposition) device 30, including a top cover 310, a base 320, a heating assembly 330 and a reaction chamber for a CVD reaction. The heating assembly 330 is used to heat the temperature of the reaction chamber to a temperature suitable for the reaction. The reaction chamber includes a gas distribution device 10 of the present embodiment, and the gas distribution device 10 is used to provide a uniform reaction gas to various locations in the reaction chamber.

[0049] Example 3

[0050] The same parts as those of Embodiment 1 are not repeated here, and only the different parts are described. In Embodiment 1, the inner wall surface of the second stopper 2223 is a plane, and in Embodiment 3, the inner wall surface of the second stopper 2223 is configured as an arc-shaped wall surface convex toward the center of the uniform gas layer 200.

[0051] In this embodiment, if Figure 7 and Figure 8 As shown, the first stopper 2213 adopts a streamlined shape that promotes the formation of a cyclone, thereby guiding the formation of a clockwise cyclone at the first air homogenizing structure 221 and improving the air homogenizing effect.

[0052] Different from the first embodiment, in the present embodiment, in the first air-leveling structure 221, the angle a between the second extension direction and the second radial direction is greater than the angle c between the inlet direction of the first air-leveling channel and the first radial direction of the air-leveling layer 200 at the corresponding inlet. That is, the first air-leveling channel is a channel extending along an arc, so that the first air-leveling channel can have a larger angle a, so that the air-flow can have a larger tangential component velocity after passing through the first air-leveling channel, so as to facilitate the redistribution of the air-flow in the circumferential direction downstream of the first air-leveling structure, and improve the air-leveling effect.

[0053] Similarly, in the second air uniforming structure 222, the angle d between the fourth extension direction and the fourth radial direction of the air uniforming layer 200 at the corresponding outlet is greater than the angle b between the air flow inlet direction of the second air uniforming structure 221 and the third radial direction, that is, the second air flow channel is a channel extending along an arc, so that the second air flow channel can have a larger angle d, so that the air flow can have a larger tangential component velocity after passing through the second air flow channel, so as to facilitate the circumferential redistribution of the air flow downstream of the second air uniforming structure 222, thereby improving the air uniformity effect.

[0054] The present embodiment also provides a CVD (Chemical Vapor Deposition) device 30, including a top cover 310, a base 320, a heating assembly 330 and a reaction chamber for a CVD reaction. The heating assembly 330 is used to heat the temperature of the reaction chamber to a temperature suitable for the reaction. The reaction chamber includes a gas distribution device 10 of the present embodiment, and the gas distribution device 10 is used to provide a uniform reaction gas to various locations in the reaction chamber.

[0055] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the present invention. After reading the above content, it will be apparent to those skilled in the art that various modifications and substitutions of the present invention will occur. Therefore, the protection scope of the present invention should be limited by the appended claims.

Claims

1. A gas distribution device, characterized in that, The gas distribution device includes: An intake pipeline; A gas equalizing layer, which is arranged in a disc shape and includes a top wall and a bottom wall arranged in a disc shape, an air outlet structure located between the top wall and the bottom wall, and a gas equalizing component located inside the air outlet structure and arranged in a ring shape. Along the gas flow direction of the gas distribution device, the gas equalizing layer further sequentially includes a first space located inside the gas equalizing component, and a second space located between the gas equalizing component and the air outlet structure. The intake pipeline is in fluid communication with the first space; The air outlet structure is arranged in a ring around the second space, and the air outlet structure includes a plurality of air outlet holes uniformly arranged along its circumference; The gas equalizing component at least includes a first gas equalizing structure arranged in a ring shape. The first gas equalizing structure is provided with a plurality of first air flow channels communicating the inside and outside of the first gas equalizing structure along its circumference. Defining the extending direction with the direction from the inside to the end of the air flow channel, the first air flow channel includes a first extending direction at its inlet and a second extending direction at its outlet. Defining the radial direction of the gas equalizing layer at the corresponding outlet as the second radial direction, the second extending direction is inclined relative to the second radial direction, and the second extending directions of the plurality of first air flow channels are inclined to the same side of the second radial direction.

2. The gas distribution device according to claim 1, wherein The gas equalizing component includes a second gas equalizing structure arranged in a ring between the air outlet structure and the first gas equalizing structure. A plurality of second air flow channels are arranged along the circumference of the second gas equalizing structure. The second air flow channel includes a third extending direction at its inlet and a fourth extending direction at its outlet. Defining the air flow inlet direction at the inlet of the second gas equalizing structure as the opposite direction of the third extending direction at the corresponding inlet. Defining the radial direction of the gas equalizing layer at the corresponding inlet as the third radial direction, the air flow inlet direction of the second air flow channel is inclined relative to the corresponding third radial direction, and the air flow inlet directions of the plurality of second air flow channels are inclined to the same side of the third radial direction; wherein, the air flow inlet direction and the second extending direction are respectively inclined to different sides relative to their corresponding third radial direction and second radial direction.

3. The gas distribution device according to claim 2, wherein, The angle between the second extending direction and the corresponding second radial direction is a, 15° < a < 60°; the angle between the air flow inlet direction of the second air flow channel and the corresponding third radial direction is b, 15° < b < 60°.

4. The gas distribution device according to claim 3, wherein, Defining the radial direction of the gas equalizing layer at the outlet of the second air flow channel as the fourth radial direction, the fourth extending direction and the corresponding fourth radial direction have an angle d, and the angle d is greater than the angle a.

5. The gas distribution device according to claim 2, wherein, The first gas distribution structure includes an annular first partition plate and a plurality of first ventilation holes that are circumferentially formed in the first partition plate and evenly arranged. The first gas flow channel is configured as the first ventilation holes; the second gas distribution structure includes an annular second partition plate and a plurality of second ventilation holes that are circumferentially formed in the second partition plate and evenly arranged. The second gas flow channel is configured as the second ventilation holes; the first ventilation holes and the second ventilation holes are located at different heights of the gas distribution layer.

6. The gas distribution device according to claim 1 or 2, characterized in that, The first gas distribution structure includes a plurality of first stoppers. The plurality of first stoppers are evenly arranged in the circumferential direction. A first flow gap is formed between two adjacent first stoppers. The first gas flow channel is configured as the first flow gap.

7. The gas distribution device according to claim 6, wherein The second gas distribution structure includes a plurality of second stoppers. The plurality of second stoppers are evenly arranged in the circumferential direction. A second flow gap is formed between two adjacent second stoppers. The second gas flow channel is configured as the second flow gap; the second stopper includes an inner wall surface located between the inlets of adjacent second gas flow channels. The inner wall surface is configured as an arc-shaped wall surface that protrudes towards the center of the gas distribution layer.

8. The gas distribution device according to claim 1, wherein Define the inlet direction of the first gas flow channel as the opposite direction of the first extension direction. Define the radial direction of the gas distribution layer at the inlet of the first gas flow channel as the first radial direction. The inlet direction of the first gas flow channel and the corresponding first radial direction have an included angle c, where 0° ≤ c < 60°.

9. The gas distribution device according to claim 8, characterized in that, The included angle between the second extension direction and the corresponding second radial direction is a, where 15° < a < 60°; the included angle c is smaller than the included angle a.

10. A CVD device, comprising a reaction chamber for CVD reaction to occur, characterized in that, The reaction chamber includes the gas distribution device according to any one of claims 1-9 to provide reaction gas inward.

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