Substrate support unit and heat treatment apparatus including same

Abstract

The present invention relates to a substrate supporting unit and a heat treatment apparatus including the same, and discloses a substrate supporting unit capable of controlling heat treatment of a substrate by heating different according to areas of the substrate while adjusting an air flow flowing on a surface of the substrate by a pin assembly capable of adjusting an inclination of the substrate. Techniques for rapidly cooling the temperature of a substrate processing space and a substrate by a cooling unit. The substrate support unit includes: a substrate support table that supports the substrate; a plurality of pin assemblies including a lifting pin for lifting the substrate, a guide tip for guiding the substrate on the outer side of the lifting pin to prevent the substrate from being separated, and a main body in which the lifting pin and the guide tip are disposed in correspondence with each other, the plurality of pin assemblies being disposed at a peripheral portion of the substrate support table so as to be spaced apart from each other; and a pin lifting member that lifts the main body of the pin assembly to adjust the height of the substrate.

Description

Technical Field

[0001] The present invention relates to a substrate support unit and a heat treatment apparatus including the same, and more particularly, to a technology capable of adjusting an air flow flowing on a substrate surface through a pin assembly capable of adjusting the inclination of the substrate, controlling heat treatment of the substrate by heat supply according to different regions of the substrate, and rapidly cooling the temperature of a substrate processing space and the substrate through a cooling unit. Background Art

[0002] In order to manufacture semiconductor elements, various processes such as lithography, etching, ashing, ion implantation, thin film evaporation, and cleaning of a substrate are performed to form a desired pattern on the substrate. Among them, the etching process, as a process of removing a selected heating region in a film formed on the substrate, uses wet etching and dry etching.

[0003] For dry etching, a process device using plasma is used. Generally, in order to form plasma, an electromagnetic field is formed in the internal space of a chamber, and the electromagnetic field excites a process gas supplied into the chamber into a plasma state.

[0004] Plasma refers to an ionized gas state formed by ions, electrons, free radicals, etc. Plasma is generated through a very high temperature, a strong electric field, or a high-frequency electromagnetic field (RF Electromagnetic Fields). A semiconductor element manufacturing process uses plasma to perform an etching process.

[0005] In the past, in a plasma process device, in the plasma etching process, adsorption and etching are performed simultaneously, and there is a problem in that it is difficult to adjust fine etching. In addition, there are problems of causing an attack on the target lower film quality and a change in diffusion roughness. Furthermore, the process time required for each process by the conventional plasma process device is more than 60 minutes, and there is a problem of a decrease in UPEH (Unit Process Equipment Hour).

[0006] Therefore, there is a need for a semiconductor process device that effectively operates a plasma process and a heat treatment process to minimize target degradation problems and also improve UPEH.

[0007] Furthermore, with the independent arrangement of a lift pin and a positioning pin configured on a substrate support unit for supporting a substrate, there is a problem that the device structure becomes complicated. In addition, there is a problem that the position of the substrate deviates as the positioning pin cannot fully reflect the lifting of the lift pin when the lift pin is lifted or lowered.

[0008] Furthermore, there is a problem that a local temperature difference is generated on the substrate when a heat source is uniformly supplied to the entire region during the heat treatment process of the substrate. Summary of the Invention

[0009] The present invention is proposed to solve the problems of the prior art as described above, and its purpose is to provide a semiconductor process equipment for UPEH that effectively operates plasma processes and heat treatment processes, solves concerns about target degradation, and improves the same.

[0010] In particular, the purpose is to solve the following problems: With the separate provision of positioning pins that prevent the lift pins disposed on the substrate support unit for supporting the substrate from detaching from the substrate, the device structure becomes complex, and as the lift pins move up and down, the positioning pins cannot fully reflect the movement of the lift pins, resulting in the substrate being displaced.

[0011] Furthermore, the purpose is to solve the following problems: When performing a heat treatment process on the substrate, when a heat source is uniformly supplied to the entire area, local temperature differences are generated on the substrate.

[0012] The purpose of the present invention is not limited to the foregoing, and other objects and advantages of the present invention that are not mentioned can be understood through the following description.

[0013] One embodiment of a substrate support unit according to the present invention for solving the above problems may include: a substrate support table for supporting a substrate; a plurality of pin assemblies each including a lift pin for lifting the substrate, a guiding tip for guiding the substrate outside the lift pin to prevent the substrate from detaching, and a body in which the lift pin and the guiding tip are correspondingly arranged, the plurality of pin assemblies being spaced apart from each other at the peripheral portion of the substrate support table; and a pin lift member for lifting and lowering the body of the pin assembly to adjust the height of the substrate.

[0014] As an example, the lift pin, the guiding tip, and the body of the pin assembly may be integrally formed.

[0015] Alternatively, the pin assembly may be configured by providing a lift pin mounting hole and a guiding tip mounting hole in the body and inserting and fixing the lift pin and the guiding tip in the body.

[0016] Preferably, the guiding tip may be inclined to form an upper end portion for guiding the substrate.

[0017] Preferably, the pin assembly may be formed of quartz.

[0018] Furthermore, the substrate support unit may further include: a pin lift member for lifting and lowering each of the plurality of pin assemblies; and a substrate height control unit for controlling each of the pin lift members to adjust the lifting height of each of the plurality of pin assemblies.

[0019] As an example, it may be that the substrate support unit further includes: a pin lifting member, which is composed of one or more selected pin assemblies from the plurality of pin assemblies to form a pin assembly group, and the pin lifting member lifts each of the pin assembly groups; and a substrate height control unit, which controls each of the pin lifting members to adjust the lifting height of each of the plurality of pin assembly groups.

[0020] As an example, it may be that the substrate height control unit independently controls each of the pin lifting members in such a way that the lifting height is different for each pin assembly group to adjust the inclination of the substrate.

[0021] In addition, it may be that an embodiment of the heat treatment apparatus according to the present invention includes: a chamber that provides a heat treatment space for the substrate; the above-described substrate support unit disposed in the heat treatment space of the chamber; and a heat source unit that supplies heat for the heat treatment of the substrate.

[0022] As an example, it may be that the heat source unit includes: a plurality of lamps; and a heat source control unit that divides the plurality of lamps into a plurality of heat source regions and controls the operation of the lamps according to each heat source region.

[0023] As an example, it may be that the number of the lamps disposed in the heat source unit is different according to the heat source region.

[0024] As an example, it may be that the heat source unit divides the heat source region into a central heat source region, an intermediate heat source region, and a peripheral heat source region, arranges the lamps in multiple layers in each heat source region, and arranges the lamps by adjusting the arrangement density of the lamps.

[0025] As an example, it may be that the heat source control unit controls the output of the lamps differently according to the heat source region.

[0026] Furthermore, it may be that the heat treatment apparatus further includes: a side wall refrigerant flow path formed on the wall surface of the chamber; and a refrigerant supply unit that supplies refrigerant to the side wall refrigerant flow path.

[0027] Furthermore, it may be that the side wall refrigerant flow path is provided in a zigzag form on the wall surface of the chamber.

[0028] Even further, it may be that the heat treatment apparatus further includes: a bottom surface refrigerant flow path formed in the substrate support unit; and a refrigerant supply unit that supplies refrigerant to the bottom surface refrigerant flow path.

[0029] As an example, it may be that the bottom surface refrigerant flow path divides the portion corresponding to the substrate placed on the substrate support unit into regions and forms refrigerant flow paths according to the regions.

[0030] Furthermore, it is possible that the heat treatment apparatus further includes: a gas supply unit that supplies an environment building gas or a purification gas to the heat treatment space of the chamber.

[0031] As an example, it is possible that the substrate support unit differently controls the lifting heights of a plurality of pin assemblies to adjust the slope of the substrate, and through the adjustment of the slope of the substrate, the flow of the environment building gas or the purification gas is adjusted from the relatively high side to the relatively low side of the substrate.

[0032] It is possible that a preferred embodiment of the heat treatment apparatus according to the present invention includes: a chamber that provides a heat treatment space for a substrate; a substrate support unit disposed in the heat treatment space of the chamber and including a substrate support table that supports the substrate, lifting pins that lift the substrate, a guiding tip that guides the substrate outside the lifting pins to prevent the substrate from detaching, and a main body in which the lifting pins and the guiding tips are correspondingly arranged, and including a plurality of pin assemblies that are spaced apart from each other at an outer peripheral portion of the substrate support table and a pin lifting member that lifts the main body of the pin assembly to adjust the height of the substrate; a pin lifting member that forms a pin assembly group from one or more selected pin assemblies among the plurality of pin assemblies, and the pin lifting member lifts each of the pin assembly groups; a substrate height control unit that controls each of the pin lifting members to adjust the lifting height of each of the plurality of pin assembly groups, and independently controls each of the pin lifting members in such a way that the lifting height is different according to the pin assembly group to adjust the slope of the substrate; a heat source unit that includes a plurality of lamps and a heat source control unit, divides a portion corresponding to the substrate into a plurality of heat source regions, the plurality of lamps are arranged according to each heat source region and are adjusted to be arranged based on the density of the arrangement according to the heat source region, and the heat source control unit controls the operation of the lamps according to each heat source region; a side wall refrigerant flow path formed on the wall surface of the chamber; a bottom surface refrigerant flow path formed on the substrate support table of the substrate support unit; a refrigerant supply unit that supplies refrigerant to the side wall refrigerant flow path and the bottom surface refrigerant flow path; and a gas supply unit that supplies an environment building gas to the heat treatment space of the chamber, and the substrate support unit adjusts the flow of the environment building gas or the purification gas from the relatively high side to the relatively low side of the substrate through the adjustment of the slope of the substrate.

[0033] According to such a present invention, a semiconductor processing apparatus that can effectively operate a plasma process and a heat treatment process, prevent deterioration of a process target, and improve UPEH can be provided.

[0034] In particular, by providing a guiding tip that prevents the lifting pins for lifting the substrate from detaching from the substrate in a pin assembly of one main body, the lifting pins and the guiding tips work simultaneously, so that the position of the substrate can be stably maintained.

[0035] Furthermore, by adjusting the heights of a plurality of pin components to be different, the slope of the substrate is adjusted, thereby adjusting the flow of the gas so as to flow along the surface of the substrate, and thus the efficiency of the heat treatment process can be further improved.

[0036] In addition, the heat source supply is controlled according to the region of the substrate, so that an overall uniform heat treatment process can be performed.

[0037] Furthermore, by shortening the heat treatment process time, deterioration of the process target can be prevented.

[0038] The effects of the present invention are not limited to the above-mentioned content, and those with ordinary knowledge in the technical field to which the present invention pertains can clearly understand the unmentioned or other effects from the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 A basic structure diagram showing an example of a substrate processing system according to the present invention.

[0040] Figure 2 An embodiment of a plasma processing apparatus in a dual-process device of a substrate processing system according to the present invention is shown.

[0041] Figure 3 An embodiment of a heat treatment apparatus in a dual-process device of a substrate processing system according to the present invention is shown.

[0042] Figure 4 And Figure 5 An embodiment of a substrate support unit according to the present invention is shown.

[0043] Figures 6 to 8 An embodiment of a pin component of a substrate support unit according to the present invention is shown.

[0044] Figure 9 An example of lifting and lowering a substrate obliquely by a substrate support unit according to the present invention is shown.

[0045] Figure 10 And Figure 11 Another embodiment of a substrate support unit according to the present invention is shown.

[0046] Figure 12 An embodiment of a heat source unit included in a heat treatment apparatus according to the present invention is shown.

[0047] Figure 13 And Figure 14 An embodiment of a cooling unit included in a heat treatment apparatus according to the present invention is shown.

[0048] Figure 15 And Figure 16Shows an embodiment of adjusting the air flow in a heat treatment apparatus according to the present invention.

[0049] (Description of reference numerals)

[0050] 10: Substrate processing system,

[0051] 150: Heat treatment apparatus,

[0052] 151: Heat treatment chamber,

[0053] 200: Substrate support unit,

[0054] 220: Pin assembly,

[0055] 230: Pin lifting member,

[0056] 250: Substrate height control unit,

[0057] 300: Heat source unit,

[0058] 310, 320: Lamps,

[0059] 350: Heat source control unit,

[0060] 400, 450: Cooling units. Detailed description of the preferred embodiment

[0061] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, but the present invention is not limited or restricted to the embodiments.

[0062] In order to illustrate the present invention, the advantages in the operation of the present invention, and the objectives achieved by the implementation of the present invention, preferred embodiments of the present invention are shown below as examples and viewed with reference thereto.

[0063] First, the terms used in this application are only used to describe specific embodiments and do not limit the present invention. Singular expressions may include plural expressions as long as it is not clearly indicated in the context. In addition, in this application, terms such as "including" or "having" should be understood to mean the presence of the features, numbers, steps, operations, components, parts, or combinations thereof described in the specification, and do not preclude the existence or additional possibility of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0064] In the description of the present invention, when it is determined that a detailed description of a related well-known structure or function may obscure the gist of the present invention, its detailed description is omitted.

[0065] The present invention discloses the following technology: by a pin assembly capable of adjusting the inclination of a substrate, the airflow flowing on the substrate surface is adjusted, and at the same time, by performing different heat supply according to the regions of the substrate, the heat treatment of the substrate is controlled, and the temperature of the substrate processing space and the substrate can be rapidly cooled by a cooling unit.

[0066] Figure 1 The basic structure diagram showing an example of a substrate processing system according to the present invention is shown.

[0067] The substrate processing system 10 may include a dual-process device 100, an indexing module 30, etc.

[0068] The dual-process device 100 can be separately divided into a device for performing an adsorption process by plasma treatment of the substrate and a device for performing an etching process by heat treatment of the substrate.

[0069] As an example, the dual-process device 100 may include a plasma process device 110, a heat treatment device 150, etc.

[0070] When performing an etching process on the substrate through the dual-process device 100, the adsorption process performed by the plasma process device 110 and the etching process performed by the heat treatment device 150 can be executed in a repetitive cycle.

[0071] The plasma process device 110 of the dual-process device 100 can be a plasma process device applicable to various methods such as capacitively coupled plasma (CCP), inductively coupled plasma (ICP), and microwave plasma.

[0072] In addition to the dual-process device 100, a single-process device may also be included. The single-process device can perform the adsorption process by plasma treatment and the etching process by heat treatment in one device. The detailed description of the single-process device is omitted.

[0073] The indexing module 30 can supply the substrate to the dual-process device 100.

[0074] Regarding the plasma process device 110 of the dual-process device 100, as an exemplary embodiment applicable to the capacitively coupled plasma (CCP) method, Figure 2 An embodiment of the plasma process device in the dual-process device of the substrate processing system according to the present invention is shown.

[0075] The plasma process device 110 may include a plasma process chamber 111, a substrate support unit 120, a plasma generation unit 130, a gas supply unit 140, etc. Further, an ion blocker 113 may also be provided in the plasma process chamber 111 of the plasma process device 110.

[0076] The plasma process chamber 111 can provide a plasma processing space 112 for performing a plasma processing process on a substrate W. As an example, the plasma process chamber 111 can be a cylindrical vacuum chamber.

[0077] Above the plasma process chamber 111, a chamber lid 116 can be arranged to seal the plasma processing space 112 of the plasma process chamber 111.

[0078] On the side wall of the plasma process chamber 111, a door member (not shown) for the entry and exit of the substrate W can be provided. The substrate W can be carried into and out of the plasma processing space 112 of the plasma process chamber 111 through the door member.

[0079] Below the plasma process chamber 111, an exhaust unit 117 can be arranged. The exhaust unit 117 can include an exhaust pipe 118, a vacuum pump 119, etc. The exhaust unit 117 can adjust the pressure in the plasma processing space 112 of the plasma process chamber 111 to a desired vacuum degree through a vacuum pump 119 such as a turbomolecular pump. In addition, the exhaust unit 117 can discharge process by-products and residual process gases generated in the plasma process chamber 111.

[0080] The parts in contact with the process gas such as the wall part of the plasma process chamber 111 can be formed of a material such as aluminum ceramic (AlCeramic).

[0081] The substrate support unit 120 can be arranged in the plasma processing space 112 of the plasma process chamber 111. The substrate support unit 120 can support the substrate W.

[0082] The substrate support unit 120 can include an electrostatic chuck (ESC) that supports the substrate W by electrostatic adsorption. Depending on the situation, the substrate support unit 120 can include various substrate support members that can fixedly support the substrate W by mechanical clamping or the like or fixedly support the substrate W by vacuum adsorption force.

[0083] The substrate support unit 120 can adjust the temperature of the substrate W during the plasma processing of the substrate W. For this purpose, a heating component 121 and a cooling component 125 can be provided in the substrate support unit 120. For example, the temperature of the substrate W can be adjusted to a set high temperature by the heating component 121. In addition, the temperature of the substrate W can be adjusted to a set low temperature by the cooling component 125.

[0084] The plasma generation unit 130 can activate plasma in the plasma processing space 112 of the plasma process chamber 111.

[0085] The plasma generation unit 130 may include an upper electrode 131, a lower electrode 133, an RF power supply unit 135, etc.

[0086] The upper electrode 131 may include a high-frequency (RF) wire. The wire may have a planar coil shape. The chamber cover 116 may include a disc-shaped dielectric window. The dielectric window may include a dielectric material. For example, the dielectric window may include aluminum oxide (Al2O3). The dielectric window may have a function of transmitting the power from the wire to the inside of the plasma processing chamber 111.

[0087] For example, the upper electrode 131 may include a coil in a spiral form or a concentric circle form. Among them, the number, configuration, etc. of the coil may be appropriately changed as needed.

[0088] The RF power supply unit 135 may apply plasma source power to the upper electrode 131. The RF power supply unit 135 may generate a high-frequency (RF) signal and apply it to the upper electrode 131.

[0089] The lower electrode 133 may be disposed inside the substrate support unit 120. The lower electrode 133 may be grounded or connected to a bias power supply.

[0090] The gas supply unit 140 may supply a process gas into the plasma processing chamber 111. In addition, a carrier gas may be supplied into the plasma processing chamber 111 in addition to the process gas.

[0091] Regarding the process gas, various process gases may be selected according to the characteristics of the target substrate to be plasma-treated. Preferably, the parts in contact with the process gas, such as the wall of the plasma processing chamber 111, are formed of a material such as aluminum ceramic (AlCeramic). Therefore, the process gas may be a gas that removes or minimizes F (fluorine)-series or H (hydrogen)-series gases. That is, in order to prevent corrosion of the parts in contact with the process gas, such as the wall of the plasma processing chamber 111, the process gas introduced during plasma treatment may be selected.

[0092] The carrier gas is a gas that does not react with the process gas and does not react with the surface of the substrate W, and may include inert gases such as Ar.

[0093] Furthermore, the gas supply unit 140 may include a flow rate controller (FRC) or the like to adjust the supply amounts of the process gas and the carrier gas. As an example, the flow rate controller (FRC) may include a mass flow controller (MFC).

[0094] The ion blocker 113 may be disposed in the upper space inside the plasma process chamber 111 to divide the plasma processing space 112. As an example, the ion blocker 113 may form an upper plasma space above it and a lower plasma space above the substrate W.

[0095] As an example, the ion blocker 113 may include an upper plate 114 and a lower plate 115, and may include a diffusion space provided between the upper plate 114 and the lower plate 115.

[0096] A plurality of gas inlet holes may be provided in the upper plate 114 as through holes for allowing the gas in the upper plasma space to flow into the diffusion space. A plurality of gas outlet holes may be provided in the lower plate 115 as through holes for allowing the gas in the diffusion space to diffuse into the lower plasma space.

[0097] The plurality of gas inlet holes provided in the upper plate 114 and the plurality of gas outlet holes provided in the lower plate 115 may be configured such that the virtual extension lines thereof are staggered from each other. That is, the virtual extended holes of the gas inlet holes in the upper plate 114 intersect the upper surface of the lower plate 115 and are blocked, and in addition, the virtual extended holes of the gas outlet holes in the lower plate 115 intersect the lower surface of the upper plate 114 and are blocked.

[0098] The number, arrangement form, etc. of the gas inlet holes in the upper plate 114 and the gas outlet holes in the lower plate 115 may be variously deformed as needed.

[0099] With such a structure of the ion blocker 113, ions can be filtered while allowing radicals to diffuse to the surface of the substrate W.

[0100] The plasma processing apparatus 110 may perform a plasma processing process on the substrate W so that radicals for etching are adsorbed to the substrate W.

[0101] Next, look at the heat treatment device 150 of the dual process device 100. The heat treatment device 150 may emit any one or more heat sources among various heat sources such as a flash lamp, a laser generator, or a microwave generator, and perform an etching process by heat-treating the substrate W.

[0102] As an example, the flash lamp may provide light as heating energy. The laser generator may provide laser as heating energy. The microwave generator may provide microwave as heating energy.

[0103] Preferably, the heat treatment apparatus 150 of the dual process apparatus 100 can employ a heat source using a lamp suitable for performing a heating process for a long time. That is, in the dual process apparatus 100, the number of heat treatment apparatuses 150 can be increased compared to the number of plasma process apparatuses 110, so that a substrate processing operation that requires a long heat treatment process can be processed by the dual process apparatus 100.

[0104] As an example of applying a lamp heat source to the heat treatment apparatus 150 of the dual process apparatus 100, Figure 3 FIG. shows an embodiment of a processing apparatus in a dual process apparatus of a substrate processing system according to the present invention.

[0105] The heat treatment apparatus 150 may include a heat treatment chamber 151, a substrate support unit 200, a heat source unit 300, a gas supply unit 180, and the like.

[0106] The heat treatment chamber 151 can provide a heat treatment space 152 for performing a heat treatment process on the substrate W.

[0107] The substrate support unit 200 may be disposed on the heat treatment space 152 of the heat treatment chamber 151. The substrate W can be placed and supported on the substrate support unit 200.

[0108] The heat source unit 300 may be disposed above the heat treatment space 152 of the heat treatment chamber 151.

[0109] The heat source unit 300 may include a lamp. Preferably, the heat source unit 300 may include a plurality of lamps arranged corresponding to the size of the substrate W. The lamp emits light energy, and the light energy emitted from the lamp can be provided to the substrate W.

[0110] As an example, the number of lamp configurations can be adjusted corresponding to the area division of the substrate W, and the heat emission control of the lamps can be performed differently. Regarding this, it will be viewed through embodiments later.

[0111] The substrate W can be quickly heated and raised to a set temperature range by the light energy emitted from the heat source unit 300.

[0112] In addition, the heat treatment apparatus 150 may further include cooling units 400 and 450.

[0113] The cooling unit 400 may be disposed on the side partition wall of the heat treatment chamber 151 to cool the heat treatment space 152 and the substrate W. In addition, the cooling unit 450 may be disposed on the substrate support unit 200 to cool the substrate W.

[0114] As an example, the cooling units 400 and 450 may include a cooling flow path and a refrigerant supply unit that supplies refrigerant to the cooling flow path. Regarding this, it will be described later through embodiments.

[0115] The gas supply unit 180 may supply an environment-building gas for building a heat treatment environment in the heat treatment space 152 of the heat treatment chamber 151 and a purifying gas for etching the substrate W through heat treatment. As an example, the environment-building gas may be an inert gas such as N2, Ar, or He that does not react with other gases and does not react with the surface of the substrate W.

[0116] The heat treatment apparatus 150 may shorten the process time through rapid heat treatment of the substrate W and may achieve etching uniformity through heating and cooling of the substrate W.

[0117] Regarding each structure provided in the heat treatment apparatus 150, it will be described in more detail through embodiments.

[0118] Figure 4 And Figure 5 An embodiment of a substrate support unit according to the present invention is shown.

[0119] The substrate support unit 200 according to the present invention may include a substrate support table 210, a pin assembly 220, a pin lifting member 230, a substrate height control unit 250, etc.

[0120] The substrate support table 210 may support the substrate W. More specifically, the substrate W may be placed and supported on the pin assembly 220 disposed on the substrate support table 210.

[0121] The pin assembly 220 may be lifted and lowered above the substrate support table 210. The pin assembly 220 may be placed to support the substrate W and prevent the substrate W from detaching.

[0122] A plurality of pin assemblies 220 may be arranged along the circumference of the substrate W. As an example, as described above Figure 5 three pin assemblies 220-1, 220-2, and 220-3 may be arranged at intervals along the circumference of the substrate W. The number and arrangement positions of the pin assemblies 220 may be appropriately changed according to needs.

[0123] The substrate height control unit 250 may control the pin lifting member 230 to adjust the height of the pin assembly 220 to adjust the height of the substrate W.

[0124] The pin lifting member 230 may include a lifting rod 231, a lifting drive unit 235, etc. The lifting rod 231 may pass through the substrate support table 210 and be connected to the lower end of the pin assembly 220 to lift and lower the pin assembly 220. The lifting drive unit 235 may include a linear motor or the like to move the lifting rod 231 in the vertical direction.

[0125] The substrate height control unit 250 can control the pin lifting member 230 to adjust the height of the substrate W placed on the pin assembly 220.

[0126] Regarding the pin assembly, Figures 6 to 8 An embodiment of the pin assembly of the substrate support unit according to the present invention is shown. The above Figure 6 Is shown enlarged above Figure 4 Part A in.

[0127] The pin assembly 220 may include a lifting pin 225, a guiding tip 227, a main body 221, etc.

[0128] The lifting pin 225 can contact the lower surface of the substrate W to lift and lower the substrate W.

[0129] The guiding tip 227 can guide the substrate W outside the lifting pin 225 to prevent the substrate W from detaching.

[0130] The lifting pin 225 and the guiding tip 227 can be correspondingly arranged on the main body 221.

[0131] As an example, it can be, as above Figure 7 As such, the pin assembly 220a can integrally form the lifting pin 225a and the guiding tip 227a protruding upward from the main body 221a. For example, the main body 221a, the lifting pin 225a, and the guiding tip 227a can be formed of quartz material into an integral pin assembly 220a.

[0132] As another example, as above Figure 8 As such, the pin assembly 220b can separately manufacture and combine the main body 221b, the lifting pin 225b, and the guiding tip 227b.

[0133] It can be that a lifting pin mounting hole 222b and a guiding tip mounting hole 223b are provided in the main body 221b, mounting protrusions 226b, 228b are provided below the lifting pin 225b and the guiding tip 227b, and the lifting pin 225b and the guiding tip 227b are mounted and combined in the lifting pin mounting hole 222b and the guiding tip mounting hole 223b of the main body 221b.

[0134] The main body 221b, the lifting pin 225b, and the guiding tip 227b can each be formed of quartz material.

[0135] An inclined portion 229 can be formed at the upper end of the guiding tip 227. The inclined portion 229 of the guiding tip 227 can guide the side surface of the substrate W to align the substrate W and prevent the substrate W from detaching.

[0136] In particular, when the substrate W to be inspected later is lifted and lowered obliquely, the side surface of the substrate W contacts the inclined portion 229 of the guide tip 227, thereby preventing the substrate W from slipping and detaching in one direction.

[0137] Furthermore, in the present invention, the lifting and lowering members of the control pins are controlled so that the plurality of pin assemblies are lifted and lowered at different heights, respectively, whereby the substrate can be lifted and lowered obliquely. Regarding this, Figure 9 An example of lifting and lowering the substrate obliquely by the substrate support unit according to the present invention is shown.

[0138] Each of the first to third pin assemblies 220-1, 220-2, 220-3 may be individually provided with first to third pin lifting and lowering members 230-1, 230-2, 230-3.

[0139] The substrate height control unit 250 can independently control the first to third pin lifting and lowering members 230-1, 230-2, 230-3.

[0140] As described above Figure 9 shown, it may be that the first lifting rod 231-1 of the first pin lifting and lowering member 230-1 is connected to the first pin assembly 220-1, and the first pin assembly 220-1 is lifted and lowered by the operation of the first lifting drive unit 235-1. Similarly, it may be that the second and third lifting rods 231-2, 231-3 of the second and third pin lifting and lowering members 230-2, 230-3 are connected to the second and third pin assemblies 220-2, 220-3, and the second and third pin assemblies 220-2, 220-3 are lifted and lowered respectively by the operation of each of the second and third lifting drive units 235-2, 235-3.

[0141] The substrate height control unit 250 can control the first pin lifting and lowering member 230-1 to raise the first pin assembly 220-1 relatively higher, and control the second and third pin lifting and lowering members 230-2, 230-3 to raise the second and third pin assemblies 220-2, 220-3 relatively lower.

[0142] In this way, the substrate height control unit 250 can adjust the lifting heights of the first to third pin assemblies 220-1, 220-2, 220-3 to adjust the inclined height H of the substrate W.

[0143] At this time, the inclined portions provided at the guide tips of the second and third pin assemblies 220-2, 220-3 contact the side surface of the substrate W and guide it, and the substrate W can be prevented from slipping and detaching downward in the inclined direction.

[0144] Figure 10 And Figure 11 Another embodiment of the substrate support unit according to the present invention is shown.

[0145] In the description of this embodiment, the description of the parts that are repeated with the previously viewed embodiments is omitted or briefly described.

[0146] It is possible that the substrate support unit 200 is provided with first to third pin assemblies 220-1, 220-2, 220-3. The first pin assembly 220-1 consists of one and forms an independent first pin assembly group, and the second and third pin assemblies 220-2, 220-3 consist of two and form a second pin assembly group.

[0147] It is possible that a first pin lifting member 230a is provided corresponding to the first pin assembly group, and a second pin lifting member 230b is provided corresponding to the second pin assembly group.

[0148] It is possible that the lifting rod 231a of the first pin lifting member 230a is connected to the first pin assembly 220-1 that forms the first pin assembly group, and the height of the first pin assembly 220-1 that forms the first pin assembly group is adjusted by the lifting drive unit 235a.

[0149] That is, it is possible that only the first pin assembly 220-1 forms the first pin assembly group, and the height of the first pin assembly 220-1 is adjusted independently.

[0150] It is possible that two lifting rods 231b-1, 231b-2 are provided on the second pin lifting member 230b corresponding to the second and third pin assemblies 220-2, 220-3 that form the second pin assembly group, and the two lifting rods 231b-1, 231b-2 are connected together by a connecting rod 233b. Moreover, the heights of the second and third pin assemblies 220-2, 220-3 that form the second pin assembly group can be adjusted simultaneously by the lifting drive unit 235b.

[0151] The substrate height control unit 250 can control the first pin lifting member 230a to raise the height of the first pin assembly 220-1 of the first pin assembly group relatively higher, and control the second pin lifting member 230b to raise the heights of the second and third pin assemblies 220-2, 220-3 that form the second pin assembly group relatively lower.

[0152] Of course, it is also possible to raise the first pin assembly group relatively lower and raise the second pin assembly group relatively higher.

[0153] In this way, in the present invention, multiple pin assemblies can be selected to form multiple pin assembly groups, and the lifting height of the substrate can be adjusted by adjusting the height according to the pin assembly groups, thereby adjusting the inclination of the substrate.

[0154] Although it has been described that the substrate support unit according to the present invention as viewed above is arranged in the heat treatment apparatus, the substrate support unit according to the present invention may also be arranged in the plasma processing apparatus 110 of the dual process equipment 100 described above as needed. When arranged in the plasma processing apparatus 110, additional structures may also be added accordingly.

[0155] Figure 12 An embodiment of the heat source unit included in the heat treatment apparatus according to the present invention is shown.

[0156] The above Figure 12 embodiment is a case where the heat source unit included in the heat treatment apparatus 150 (refer to Figure 1 ) includes lamps.

[0157] The heat source unit 300 may include a plurality of lamps 310.

[0158] The heat source control unit 350 may control the operation of the plurality of lamps 310. As an example, it may be divided into a plurality of heat source regions A and B corresponding to the substrate, and the operation of the lamps 310 may be controlled differently according to each heat source region A and B. For example, the output of the lamps 310 may be adjusted according to each heat source region A and B to differently adjust the heat emitted.

[0159] As an example, as in the above Figure 12 (a), the number of the plurality of lamps 310 may be configured differently according to the heat source regions A and B. For example, the lamps 310 may be relatively densely arranged in the central heat source region A to configure a larger number of lamps 310, and the lamps 310 may be relatively less densely arranged in the peripheral heat source region B to configure a smaller number of lamps 310.

[0160] Although it is shown and described in the above Figure 12 (a) that the lamps 310 are arranged more densely in the central heat source region A than in the peripheral heat source region B, on the contrary, the lamps 310 may also be arranged more densely in the peripheral heat source region B than in the central heat source region A.

[0161] Furthermore, the lamps may be arranged in a multi-layer structure, or the lamp arrangement structure may be formed such that the lower lamps 310 and the upper lamps 320 are perpendicular to each other as in the above Figure 12 (b).

[0162] With such an arrangement structure, the lamp arrangement density of each heat source region A and B can be adjusted differently, and the output of the lamps can also be adjusted differently according to the heat source regions A and B.

[0163] Figure 13 And Figure 14 An embodiment of the cooling unit included in the heat treatment apparatus according to the present invention is shown.

[0164] The aboveFigure 13 An embodiment of a cooling unit 400 disposed in a side partition wall of a heat treatment chamber 151 is shown.

[0165] The cooling unit 400 may include a side wall refrigerant flow path 410, a refrigerant supply unit 440, and the like.

[0166] The side wall refrigerant flow path 410 may be provided as a flow path inside the side partition wall of the heat treatment chamber 151, or may be provided as a pipe outside the side partition wall of the heat treatment chamber 151.

[0167] The side wall refrigerant flow path 410 may be formed in a zigzag form, and the interval between the flow paths and the diameter of the flow path may be adjusted as needed.

[0168] The refrigerant supply unit 440 may supply refrigerant to the side wall refrigerant flow path 410. The refrigerant supply unit 440 may include a refrigerant supply pump to adjust the amount of refrigerant supplied.

[0169] The above Figure 14 An embodiment of a cooling unit 450 disposed on a substrate support table 210 of a substrate support unit 200 (refer to Figure 4 ) is shown. Figure 4 )

[0170] Bottom surface refrigerant flow paths 460a, 460b, and 460c of the cooling units 450a, 450b, and 450c may be provided inside the substrate support table 210.

[0171] The bottom surface refrigerant flow paths 460a, 460b, and 460c may be formed in various forms and patterns as described above. Figure 14 shown.

[0172] As an example, the portion corresponding to the substrate placed on the substrate support unit 200 may be divided into regions and the refrigerant flow paths 460a, 460b, and 460c may be formed according to the regions. Furthermore, the diameter and arrangement density of the refrigerant flow paths 460a, 460b, and 460c may be adjusted according to the regions.

[0173] The refrigerant supply unit 470 may supply refrigerant to the bottom surface refrigerant flow paths 460a, 460b, and 460c. The refrigerant supply unit 470 may include a refrigerant supply pump to adjust the amount of refrigerant supplied.

[0174] Furthermore, in the present invention, the airflow of the environmental construction gas or the purification gas supplied to the heat treatment space of the chamber and flowing along the upper surface of the substrate can be adjusted. Regarding this, Figure 15 and Figure 16 an embodiment of adjusting the airflow in a heat treatment apparatus according to the present invention is shown.

[0175] This embodiment is applicable to the above-mentioned Figure 4 to the above-mentioned Figure 10 substrate support unit of the embodiment of the heat treatment apparatus, and can also be applicable to the above-mentioned Figure 10 and the above-mentioned Figure 11 embodiment of the substrate support unit.

[0176] While performing heat treatment on the substrate W, an ambient gas or a purifying gas can be supplied to the heat treatment space 152 of the heat treatment chamber 151 through the gas supply unit 180.

[0177] According to the heat treatment process and gas performed while supplying gas to the heat treatment space 152 side of the heat treatment chamber 151, the substrate support unit 200 can adjust the inclination of the substrate W.

[0178] As an example, it can be that the first pin assembly 220-1 is lifted relatively higher by the first pin lifting member 230-1, and the second pin assembly (not shown) and the third pin assembly 220-3 are present at a relatively lower height than the first pin assembly 220-1 by the second lifting member (not shown) and the third pin lifting member 230-3.

[0179] By adjusting the height of the pin assembly, the inclination of the substrate W can be adjusted. The flow of gas can be controlled from the relatively high part to the relatively low part of the substrate W.

[0180] The gas flowing through the substrate W can be discharged to the outside of the heat treatment chamber 151 through the gas discharge member 190.

[0181] By adjusting the substrate inclination in this way, the flow of gas in contact with the substrate W can be adjusted, thereby further improving the efficiency of the heat treatment process.

[0182] The above description only illustratively explains the technical concept of the present invention. Those with ordinary knowledge in the technical field to which the present invention pertains can make various modifications and deformations without departing from the substantial features of the present invention. Therefore, the embodiments described in the present invention are used to illustrate the technical concept of the present invention rather than to limit the technical concept of the present invention. The technical concept of the present invention is not limited to such embodiments. The protection scope of the present invention should be interpreted by the appended claims and should be interpreted to include all technical concepts within the equivalent scope in the claims of the present invention.

Claims

1. A substrate support unit, characterized in that: include: A substrate support platform supports the substrate; A plurality of pin assemblies, including lifting pins for lifting the substrate, guide tips for guiding the substrate outside the lifting pins to prevent the substrate from being separated, and a body on which the lifting pins and the guide tips are correspondingly arranged, wherein the plurality of pin assemblies are arranged at intervals from each other at the outer portion of the substrate support table; as well as The pin lifting member lifts and lowers the main body of the pin assembly to adjust the height of the substrate.

2. The substrate support unit according to claim 1, wherein: The lifting pin, the guide tip and the main body of the pin assembly are formed integrally.

3. The substrate support unit according to claim 1, wherein: The pin assembly is provided with a lifting pin mounting hole and a guide top mounting hole in the main body, and is formed by inserting and fixing the lifting pin and the guide top in the main body.

4. The substrate supporting unit according to claim 1, wherein: The guide tip is obliquely formed with an upper end portion for guiding the substrate.

5. The substrate supporting unit according to claim 1, wherein: The pin assembly is formed from quartz.

6. The substrate supporting unit according to claim 1, wherein: The substrate supporting unit further comprises: a pin lifting member for lifting and lowering each of the plurality of pin assemblies; and The substrate height control unit controls each of the pin lifting members to adjust the lifting height of each of the plurality of pin assemblies.

7. The substrate supporting unit according to claim 1, wherein: The substrate supporting unit further comprises: a pin lifting member, wherein a pin assembly group is formed by one or more pin assemblies selected from the plurality of pin assemblies, and wherein the pin lifting member lifts and lowers each of the pin assembly groups; and The substrate height control unit controls each of the pin lifting members to adjust the lifting height of each of the plurality of pin assembly groups.

8. The substrate supporting unit according to claim 7, wherein: The substrate height control unit adjusts the inclination of the substrate by independently controlling each of the pin lifting members in a manner that the lifting heights are different according to the pin assembly groups.

9. A heat treatment device, characterized in that: include: The chamber provides a space for heat treatment of the substrate; The substrate support unit according to claim 1, arranged in the heat treatment space of the chamber; as well as A heat source unit supplies heat for heat treatment of the substrate.

10. The heat treatment device according to claim 9, characterized in that: The heat source unit comprises: Multiple lights; and The heat source control unit divides the plurality of lamps into a plurality of heat source areas and controls the operation of the lamps for each of the heat source areas.

11. The heat treatment device according to claim 10, characterized in that: The number of the lamps arranged in the heat source unit varies according to the heat source area.

12. The heat treatment device according to claim 10, characterized in that: The heat source unit divides the heat source area into a central heat source area, an intermediate heat source area, and a peripheral heat source area, arranges the lamps in multiple layers in each heat source area, and arranges the lamps by adjusting the arrangement density of the lamps.

13. The heat treatment device according to claim 10, characterized in that: The heat source control unit controls the output of the lamp differently according to the heat source area.

14. The heat treatment device according to claim 9, characterized in that: The heat treatment device also includes: a side wall refrigerant flow path formed on a wall surface of the chamber; and The refrigerant supply unit supplies refrigerant to the side wall refrigerant flow path.

15. The heat treatment device according to claim 14, characterized in that: The side wall refrigerant flow path is arranged in a zigzag manner on the wall surface of the chamber.

16. The heat treatment device according to claim 9, characterized in that The heat treatment device also includes: a bottom surface refrigerant flow path formed in the substrate supporting unit; and The refrigerant supply unit supplies refrigerant to the bottom surface refrigerant flow path.

17. The heat treatment device according to claim 16, characterized in that: The bottom surface refrigerant flow path divides a portion corresponding to the substrate placed on the substrate supporting unit into regions, and refrigerant flow paths are formed in each region.

18. The heat treatment device according to claim 9, characterized in that The heat treatment device also includes: A gas supply unit selectively supplies an environment building gas or a purge gas to the heat treatment space of the chamber.

19. The heat treatment device according to claim 18, characterized in that: The substrate supporting unit controls the lifting heights of the plurality of pin assemblies differently to adjust the inclination of the substrate. By adjusting the inclination of the substrate, the flow of the environment building gas or the purge gas is adjusted from a relatively high side of the substrate to a relatively low other side.

20. A heat treatment device, characterized in that: include: The chamber provides a space for heat treatment of the substrate; a substrate supporting unit disposed in the heat treatment space of the chamber and comprising a substrate supporting table for supporting the substrate, a lifting pin for lifting the substrate, a guide tip for guiding the substrate outside the lifting pin to prevent the substrate from being separated, and a main body in which the lifting pin and the guide tip are correspondingly disposed, and comprising a plurality of pin assemblies disposed at intervals on the periphery of the substrate supporting table and a pin lifting member for lifting and lowering the main body of the pin assembly to adjust the height of the substrate; A pin lifting member, wherein a pin assembly group is formed by one or more pin assemblies selected from the plurality of pin assemblies, and the pin lifting member lifts and lowers each of the pin assembly groups; a substrate height control unit that controls each of the pin lifting members to adjust the lifting height of each of the plurality of pin assembly groups, and independently controls each of the pin lifting members in a manner that the lifting heights are different according to the pin assembly groups to adjust the inclination of the substrate; A heat source unit, comprising a plurality of lamps and a heat source control unit, wherein a portion corresponding to the substrate is divided into a plurality of heat source areas, the plurality of lamps are arranged according to the heat source areas and the arrangement density of the heat source areas is adjusted based on the number, and the heat source control unit controls the operation of the lamps according to the heat source areas; A side wall refrigerant flow path is formed on a wall surface of the chamber; a bottom surface refrigerant flow path formed on the substrate support table of the substrate support unit; a refrigerant supplying portion for supplying refrigerant to the side wall refrigerant flow path and the bottom surface refrigerant flow path; as well as a gas supply unit for supplying environment building gas or purge gas to the heat treatment space of the chamber, The substrate supporting unit adjusts the flow of the environment building gas or the purge gas from one side of the substrate which is relatively high to another side of the substrate which is relatively low by adjusting the inclination of the substrate.

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