Substrate tray for preparing gallium nitride single crystal thick film material

Abstract

The invention relates to the technical field of semiconductor preparation and production equipment parts, in particular to a substrate tray for preparing a gallium nitride single crystal thick film material, which comprises a graphite tray, a substrate tray, a substrate tray, a substrate tray, a substrate tray, a substrate tray, a substrate tray, a substrate tray, a substrate tray and a substrate tray, and is characterized in that the top is provided with an accommodating groove for placing a substrate; the side wall is provided with a positioning hole and the bottom is provided with a graphite base; the cylindrical silicon nitride ceramic protective cover sleeves the graphite tray, a deposition window is formed in the top of the cylindrical silicon nitride ceramic protective cover, the deposition window and the containing groove are coaxially arranged, the inner diameter of the deposition window is smaller than or equal to the outer diameter of the substrate slice, and a mounting hole is formed in the cylindrical side wall; the cylindrical side wall of the silicon nitride ceramic protective cover and the side wall of the graphite tray are connected and fastened in a non-rigid manner through a flexible connecting piece; the gallium nitride single crystal thick film material is deposited on the substrate slice and located in the deposition window. According to the substrate tray provided by the invention, the gallium nitride single crystal thick film material and the substrate sheet can be conveniently taken down from the graphite tray, the yield of the gallium nitride single crystal material is improved, the service life of the graphite tray is prolonged, and the cost of consumables is reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of components for semiconductor material preparation and production equipment, and particularly relates to a substrate tray for preparing gallium nitride single crystal thick film materials. Background Art

[0002] When heteroepitaxially growing gallium nitride (GaN) single crystal thick film materials on a hetero-substrate wafer by using the hydride vapor phase epitaxy (HVPE) process, in the prior art, a graphite tray coated with a silicon carbide coating is used. The substrate wafer is placed in a groove at the top of the graphite tray. In order to avoid the substrate wafer being crushed due to the lateral expansion of the substrate wafer or the lateral contraction of the graphite tray during the large-scale temperature rise and fall process, and to facilitate the placement of the substrate wafer, a gap of 2-5 mm is usually reserved between the outer periphery of the substrate wafer and the inner wall of the graphite tray groove. The graphite tray equipped with the substrate wafer is installed on a substrate rotating base in the reaction chamber of the hydride vapor phase epitaxy equipment. Inevitably, when depositing and growing gallium nitride single crystal thick film materials on the substrate wafer, gallium nitride single crystal or polycrystalline materials will also be deposited in the gaps between the upper surface of the graphite tray, the graphite tray groove and the substrate wafer, and there will be a situation where the gap between the graphite tray groove and the substrate wafer is adhered or even filled. This will lead to the following problems: First, during the large-scale cooling process after the deposition of the gallium nitride single crystal thick film material, the graphite tray shrinks and squeezes the gallium nitride thick film material or the substrate wafer, resulting in the fragmentation of the gallium nitride single crystal thick film material or together with the substrate wafer, thereby affecting the material yield; second, it is difficult to smoothly remove the substrate wafer from the graphite tray; third, removing the gallium nitride material deposited on the upper surface of the graphite tray requires a significant extension of the high-temperature and high-vacuum baking time, which greatly shortens the service life of the silicon carbide protective coating of the graphite tray and increases the consumable cost of the graphite tray. Summary of the Invention

[0003] The present invention provides a substrate tray for preparing gallium nitride single crystal thick film materials, aiming to solve the problems of low material yield, difficulty in removing the substrate wafer and the gallium nitride single crystal thick film material, and high consumable cost of the graphite tray caused by the deposition of gallium nitride materials in the gaps between the upper surface of the graphite tray, the graphite tray and the substrate wafer.

[0004] The present invention provides a substrate tray for preparing gallium nitride single crystal thick film materials, including: A graphite tray, with a receiving groove for placing a substrate wafer opened at the top, a positioning hole opened on the side wall, and a graphite base at the bottom that can be installed on a substrate rotating base in the reaction chamber of the hydride vapor phase epitaxy; A cylindrical silicon nitride ceramic protective cover is sleeved on a graphite tray. A deposition window is provided at the top of the cylindrical silicon nitride ceramic protective cover. The deposition window is coaxially arranged with the receiving groove of the graphite tray, and the inner diameter of the deposition window is less than or equal to the outer diameter of the substrate wafer. An installation hole is provided on the cylindrical side wall of the cylindrical silicon nitride ceramic protective cover. The cylindrical side wall of the cylindrical silicon nitride ceramic protective cover is non-rigidly connected to the side wall of the graphite tray through a flexible connecting member; The gallium nitride single crystal thick film material is deposited on the substrate wafer and is located within the deposition window.

[0005] In some embodiments, the height of the substrate wafer in the vertical direction is less than or equal to the depth of the receiving groove in the vertical direction.

[0006] In some embodiments, the depth of the deposition window is greater than or equal to the thickness of the gallium nitride single crystal thick film material.

[0007] In some embodiments, the number of deposition windows of the cylindrical silicon nitride ceramic protective cover is at least one, and the number of receiving grooves of the graphite tray is at least one. The positions and numbers of the deposition windows and the receiving grooves correspond one by one.

[0008] In some embodiments, the flexible connecting member includes: A positioning bolt; A fastening bolt; A spring, one end of which is connected to the positioning bolt and the other end is connected to the fastening bolt.

[0009] In some embodiments, the materials of the positioning bolt, the fastening bolt and the spring are all ceramics.

[0010] In some embodiments, the positioning hole of the graphite tray is detachably connected to the positioning bolt.

[0011] In some embodiments, the installation hole on the cylindrical side wall of the cylindrical silicon nitride ceramic protective cover is detachably connected to the fastening bolt.

[0012] In some embodiments, the substrate wafer includes, but is not limited to, sapphire, silicon, and silicon carbide single crystal substrate wafers.

[0013] In some embodiments, the sizes of the substrate wafer include, but are not limited to, 2, 4, 6, 8, and 12 inches.

[0014] The beneficial effects of the present invention are as follows: A substrate tray for preparing a gallium nitride single crystal thick film material of the present invention is provided with a cylindrical silicon nitride ceramic protective cover sleeved on a graphite tray. A deposition window is opened at the top of the cylindrical silicon nitride ceramic protective cover, and the inner diameter of the deposition window is less than or equal to the outer diameter of the substrate wafer. The gallium nitride single crystal thick film material is deposited on the substrate wafer through the deposition window. The cylindrical silicon nitride ceramic protective cover covers the upper surface of the graphite tray and the gap between the graphite tray and the substrate wafer, which can prevent the gallium nitride material from being deposited on the upper surface of the graphite tray and the gap between the graphite tray and the substrate wafer. After the deposition is completed, the cylindrical silicon nitride ceramic protective cover is removed from the graphite tray. By using the gap between the substrate wafer and the graphite tray, it is convenient to remove the gallium nitride single crystal thick film material and the substrate wafer; moreover, the cooling and contraction of the graphite tray will not crush the gallium nitride single crystal thick film material layer or the substrate wafer, improving the material yield; no gallium nitride single crystal or polycrystalline material is deposited on the graphite tray, so there is no need for high-temperature baking and cleaning. Only a small amount of gallium nitride material is deposited on the cylindrical silicon nitride ceramic protective cover. Gallium nitride is difficult to nucleate and grow on the protective cover made of cylindrical silicon nitride ceramic material, which is more conducive to high-temperature baking and cleaning, prolonging the service life of the graphite tray and reducing the consumable cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 is a cross-sectional view of a substrate tray for preparing a gallium nitride single crystal thick film material of the present invention; Figure 2 is Figure 1 a schematic structural diagram of the flexible connecting member shown.

[0016] In the drawings, 1, graphite tray; 11, receiving groove; 12, positioning hole; 13, graphite base; 2, cylindrical silicon nitride ceramic protective cover; 21, deposition window; 22, mounting hole; 3, substrate wafer; 4, gallium nitride single crystal thick film material; 5, flexible connecting member; 51, positioning bolt; 52, fastening bolt; 53, spring. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0017] The technical solutions of the present invention will be clearly and completely described below in conjunction with the embodiments. Obviously, the described embodiments are some of the embodiments of the present invention, rather than all of them. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0018] As described in the background art, when depositing gallium nitride single crystal thick film materials using a traditional graphite tray, gallium nitride single crystal or polycrystalline materials are deposited on the upper surface of the graphite tray and in the gap between the graphite tray and the substrate wafer, resulting in problems such as low material yield, difficulty in removing the substrate wafer and the gallium nitride single crystal thick film material, and high consumable costs of the graphite tray. Therefore, how to avoid the deposition of gallium nitride materials on the upper surface of the graphite tray and in the gap between the graphite tray and the substrate wafer, improve the material yield, facilitate the removal of the gallium nitride single crystal thick film material product and the substrate wafer, and reduce the consumable costs of the graphite tray has become a technical problem that those skilled in the art urgently need to solve.

[0019] To solve the above problems, referring to Figure 1 and Figure 2 , the present invention provides a substrate tray for preparing gallium nitride single crystal thick film materials, including: a graphite tray 1 and a cylindrical silicon nitride ceramic protective cover 2. A receiving groove 11 for placing the substrate wafer 3 is provided at the top of the graphite tray 1. The shape of the receiving groove 11 is the same as that of the substrate wafer 3, which can both be circular, and the size of the receiving groove 11 is larger than the size of the substrate wafer 3. The cylindrical silicon nitride ceramic protective cover 2 is sleeved on the graphite tray 1. A deposition window 21 is provided at the top of the cylindrical silicon nitride ceramic protective cover 2. The deposition window 21 is coaxially arranged with the receiving groove 11, that is, the centers of the deposition window 21 and the receiving groove 11 are in the same vertical position, and the inner diameter of the deposition window 21 is less than or equal to the outer diameter of the substrate wafer 3. In this way, when preparing gallium nitride single crystal thick film materials by hydride vapor phase epitaxy deposition, the gallium nitride single crystal thick film material 4 passes through the deposition window 21 and is all deposited on the substrate wafer 3, and the gallium nitride single crystal thick film material 4 is located within the deposition window 21. The thickness of the gallium nitride single crystal thick film material deposited by the present invention is not less than 50 µm.

[0020] Preferably, the height of the substrate wafer 3 is less than or equal to the depth of the receiving groove 11.

[0021] Preferably, the substrate wafer 3 includes, but is not limited to, sapphire, silicon, and silicon carbide single crystal substrate wafers. The sizes of the substrate wafer 3 include, but are not limited to, 2, 4, 6, 8, and 12 inches.

[0022] Preferably, the depth of the deposition window 21 is greater than or equal to the thickness of the gallium nitride single crystal thick film material 4. If the gallium nitride single crystal thick film material 4 grows laterally above the depth of the deposition window 21, on the one hand, it is not convenient to remove the cylindrical silicon nitride ceramic protective cover 2; on the other hand, the shape of the prepared gallium nitride single crystal thick film material 4 is irregular, affecting the product quality.

[0023] Preferably, silicon nitride ceramic is selected as the material of the cylindrical silicon nitride ceramic protective cover 2. On the one hand, the silicon nitride ceramic material is not conducive to the nucleation, crystallization and growth of gallium nitride. Therefore, only a very small amount of gallium nitride material can be deposited on the upper surface of the cylindrical silicon nitride ceramic protective cover 2 and the inner side wall of the deposition window, which is convenient for cleaning the cylindrical silicon nitride ceramic protective cover 2. On the other hand, during the cooling process, the shrinkage amplitude of the silicon nitride ceramic is smaller than that of the gallium nitride single crystal thick film material. After the gallium nitride single crystal thick film material 4 is prepared, it is convenient to take it out from the deposition window 21.

[0024] Preferably, the number of deposition windows of the cylindrical silicon nitride ceramic protective cover 2 is at least one, and the number of receiving grooves of the graphite tray 1 is at least one. Moreover, the deposition windows 21 of the cylindrical silicon nitride ceramic protective cover 2 and the receiving grooves 11 of the graphite tray 1 are in one-to-one correspondence. Setting the cylindrical silicon nitride ceramic protective cover 2 with multiple deposition windows 21 and the graphite tray 1 with multiple receiving grooves 11 is convenient for simultaneously preparing multiple gallium nitride single crystal thick film materials 4, thus improving the production efficiency. Exemplarily, the number of receiving grooves 11 for carrying the substrate wafer 3 includes, but is not limited to, 1, 3, 4, 5, 6, 7, 13, 15, 19, 20.

[0025] Preferably, a substrate tray for preparing gallium nitride single crystal thick film material further includes a flexible connecting member 5. One end of the flexible connecting member 5 is connected to the graphite tray 1, and the other end is connected to the cylindrical silicon nitride ceramic protective cover 2. Through this non-rigid connection method of the flexible connecting member 5, not only can the connection and fixation between the graphite tray 1 and the cylindrical silicon nitride ceramic protective cover 2 be realized, but also it can be avoided that the cylindrical silicon nitride ceramic protective cover 2 cracks or breaks due to stress during the large-scale temperature rise and fall process caused by the expansion or contraction of the graphite tray 1, thus prolonging the service life of the cylindrical silicon nitride ceramic protective cover 2.

[0026] Preferably, the flexible connecting member 5 includes: a positioning bolt 51, a fastening bolt 52 and a spring 53. One end of the spring 53 is connected to the positioning bolt 51, and the other end is connected to the fastening bolt 52.

[0027] Preferably, the materials of the positioning bolt 51, the fastening bolt 52 and the spring 53 are all ceramics. Among them, the positioning bolt 51 and the fastening bolt 52 are made of silicon nitride ceramic material, and the spring 53 is made of high-temperature and corrosion-resistant ceramic material. The outer end face of the fastening bolt 52 is processed with a countersunk hexagon socket, which is convenient for installing and disassembling the fastening bolt 52.

[0028] Preferably, positioning holes 12 are formed on the outer periphery of the graphite tray 1, and the positioning holes 12 are detachably connected to the positioning bolts 51.

[0029] Preferably, mounting holes 22 are circumferentially formed in the cylindrical silicon nitride ceramic protective cover 2, and the mounting holes 22 are detachably connected to the fastening bolts 52. Specifically, in the exemplary embodiment, internal threads are formed in the mounting holes 22, external threads are provided on the fastening bolts 52, and the mounting holes 22 and the fastening bolts 52 are threadedly connected, thereby realizing the detachable connection between the silicon nitride ceramic protective cover 2 and the flexible connecting member 5.

[0030] Specifically, in the exemplary embodiment, the number of the positioning holes 12, the mounting holes 22 and the flexible connecting members 5 are all multiple. The graphite tray 1 and the cylindrical silicon nitride ceramic protective cover 2 are connected and fixed by a plurality of flexible connecting members 5, thereby realizing the non-rigid connection between the graphite tray 1 and the cylindrical silicon nitride ceramic protective cover 2.

[0031] Preferably, the substrate tray can be installed on the substrate rotating base of the hydride vapor phase epitaxy equipment in a right-side-up or upside-down manner.

[0032] Specifically, in the exemplary embodiment, the gallium nitride single crystal thick film material is prepared on the 6-inch sapphire substrate wafer 3 by using the substrate tray of the present invention: the substrate wafer 3 is a 6-inch sapphire substrate wafer, the inner diameter of the receiving groove 11 is 1-2 mm larger than the outer diameter of the 6-inch sapphire substrate wafer 3, and the depth of the receiving groove 11 is 0.2 mm smaller than the thickness of the 6-inch sapphire substrate wafer 3, ensuring that the 6-inch sapphire substrate wafer 3 is completely flatly placed in the receiving groove 11, and the inner diameter of the deposition window 21 is 0.2-2 mm smaller than the outer diameter of the 6-inch sapphire substrate wafer 3. The distance between the inner cylindrical wall of the cylindrical silicon nitride ceramic protective cover 2 and the outer side wall of the upper part of the graphite tray 1 is 1 mm - 3 mm, and non-rigid connection is realized through the flexible connecting member 5. Symmetrically arranged positioning holes 12 are formed in the outer circumference of the graphite tray 1, the inner diameter of the positioning holes 12 is 3 mm - 6 mm, and the hole depth is 5 mm - 10 mm. Mounting holes 22 are formed in the outer circumference of the cylindrical silicon nitride ceramic protective cover 2. The mounting holes 22 are stepped holes, including an outer stepped hole and an inner stepped hole. Internal threads are formed in the outer stepped hole, the hole depth of the outer stepped hole is 5 mm, and the inner diameter is 8 mm. The hole depth of the inner stepped hole is 5 mm, and the inner diameter is 5 mm. The mounting holes 22 and the positioning holes 12 of the graphite tray 1 are concentrically arranged in the horizontal direction. A graphite base 13 is provided at the bottom of the graphite tray 1, the outer diameter of the graphite base 13 is not larger than the outer side wall of the silicon nitride ceramic protective cover 2, and the graphite base 13 is adapted to the substrate rotating base of the hydride vapor phase epitaxy equipment, thereby mounting the graphite tray 1 on the substrate rotating base in the reaction chamber of the hydride vapor phase epitaxy equipment, and depositing the gallium nitride single crystal thick film material 4 by using the hydride vapor phase epitaxy process, and the film thickness is 0.5-1.5 mm.

[0033] Specifically, before preparing the gallium nitride single crystal thick film material 4 using the substrate tray of the present invention, first place the graphite tray 1 upright, then place a 6-inch sapphire substrate wafer in the receiving groove 11 at the top of the graphite tray 1, cover it with a cylindrical silicon nitride ceramic protective cover 2, and non-rigidly connect the cylindrical side wall of the cylindrical silicon nitride ceramic protective cover 2 to the outer side wall of the graphite tray 1 using a flexible connector 5. Finally, invert the substrate tray, that is, install the deposition window 21 and the surface of the 6-inch sapphire substrate wafer facing down on the rotating substrate pedestal of the metalorganic chemical vapor deposition equipment.

[0034] Compared with the prior art, the present invention has the following beneficial effects: 1. In the prior art, a graphite tray with a silicon carbide protective coating and a metalorganic chemical vapor deposition process are used to prepare the gallium nitride single crystal thick film material. In the present invention, by sleeving a cylindrical silicon nitride ceramic protective cover on the graphite tray, since the silicon nitride ceramic material is not conducive to the nucleation, crystallization and growth of gallium nitride, only a very small amount of gallium nitride material can be deposited on the upper surface of the silicon nitride ceramic protective cover and the inner side wall of the deposition window, which is convenient for cleaning the cylindrical silicon nitride ceramic protective cover; by designing the inner diameter of the deposition window to be less than or equal to the outer diameter of the substrate wafer, and the depth of the receiving groove of the graphite tray to be less than or equal to the thickness of the substrate wafer, the top of the protective cover can block the top of the graphite tray and the gap between the receiving groove and the substrate wafer. That is to say, the gallium nitride material is all deposited on the substrate wafer and will not be deposited on the top surface of the graphite tray and the gap between the graphite tray and the substrate wafer. In this way, every time the deposition of the gallium nitride single crystal thick film material is completed, there is no need to perform long-time high-temperature and high-vacuum baking on the graphite tray with a silicon carbide protective coating. Only a small amount of gallium nitride deposited on the cylindrical silicon nitride ceramic protective cover needs to be baked and cleaned at high temperature and high vacuum, and it can be easily removed by short-time baking, which prolongs the service life of the graphite tray and improves the preparation efficiency of the gallium nitride material; 2. Design the inner diameter of the side wall of the deposition window of the cylindrical silicon nitride ceramic protective cover to be less than or equal to the outer diameter of the substrate wafer, and the depth of the deposition window to be greater than or equal to the height of the gallium nitride single crystal thick film material. In the temperature range from room temperature to 1100 °C, the thermal expansion coefficient of the silicon nitride ceramic is small and the change range is also very small (2.53 - 2.75×10 -6 / K), the in-plane thermal expansion coefficient of the gallium nitride single crystal thick film material is large and the change range is also large (4.26 - 5.31×10 -6 / K), and the average thermal expansion coefficient of the polycrystalline graphite material is 4.0 - 8.0×10 -6 / K, the coefficient of thermal expansion may increase when cooled from a high temperature of 1100°C to room temperature. After the gallium nitride single crystal thick film material is prepared by hydride vapor phase epitaxy, during the process of cooling from a high temperature of 1100°C to room temperature, the gallium nitride single crystal thick film material has a greater shrinkage amplitude compared to the side wall of the deposition window of the silicon nitride ceramic material, while the shrinkage amplitude of the graphite tray is smaller, making it easy for the gallium nitride single crystal thick film material to separate from the inner wall of the deposition window of the silicon nitride ceramic material. Since there is no problem of gap deposition and filling, the substrate wafer is also easy to separate from the inner wall of the receiving groove of the graphite tray. During the process of taking the gallium nitride single crystal thick film material and the substrate wafer, damage to the edge of the gallium nitride single crystal thick film material, the edge of the substrate wafer, and the surface of the graphite tray with a silicon carbide coating near the receiving groove can be effectively avoided, facilitating the removal of the gallium nitride single crystal thick film material and the substrate wafer, which is beneficial to improving the yield of the gallium nitride single crystal thick film material; 3. By designing a suitable gap between the cylindrical inner side wall of the cylindrical silicon nitride ceramic protective cover and the outer side wall of the graphite tray, and using a flexible connecting member composed of a high-temperature and corrosion-resistant ceramic spring, a silicon nitride ceramic positioning bolt, and a fastening bolt, a non-rigid fastening connection between the cylindrical silicon nitride ceramic protective cover and the graphite tray is achieved, avoiding cracks or fragmentation of the cylindrical side wall of the cylindrical silicon nitride ceramic protective cover due to stress during the process of large-scale temperature rise and fall caused by the expansion or contraction of the outer side wall of the graphite tray, and improving the service life of the cylindrical silicon nitride ceramic protective cover.

[0035] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or component referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present invention.

[0036] In addition, in the description of the present invention, the meaning of "a plurality" is at least two, such as two, three, etc., unless otherwise specifically defined.

[0037] In the present invention, unless otherwise clearly specified or limited, the terms "mounted", "connected", "coupled", "fixed", etc. shall be construed in a broad sense. For example, it may be a fixed connection, a detachable connection, or integrated; it may be a mechanical connection, an electrical connection, or communicable with each other; it may be directly connected, or indirectly connected through an intermediate medium, and it may be the communication inside two components or the interaction relationship between two components, unless otherwise clearly limited. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention may be understood according to specific circumstances.

[0038] In the present invention, the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples", etc. mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in a suitable manner in any one or more embodiments or examples. In addition, without contradiction, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples.

[0039] Although the embodiments of the present invention have been shown and described above, it can be understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those of ordinary skill in the art can make changes, modifications, substitutions, and variations to the above embodiments within the scope of the present invention.

Claims

1. A substrate tray for preparing gallium nitride single crystal thick film materials, characterized in that, Comprising: A graphite tray, having a receiving groove for placing a substrate wafer on the top, positioning holes on the side wall, and a graphite base at the bottom that can be installed on the substrate rotating base in the hydride vapor phase epitaxy reaction chamber; A cylindrical silicon nitride ceramic protective cover, sleeved on the graphite tray. The top of the cylindrical silicon nitride ceramic protective cover is provided with a deposition window, and the deposition window is coaxially arranged with the receiving groove of the graphite tray, and the inner diameter of the deposition window is less than or equal to the outer diameter of the substrate wafer. The cylindrical side wall of the cylindrical silicon nitride ceramic protective cover is provided with mounting holes, and the cylindrical side wall of the cylindrical silicon nitride ceramic protective cover is connected to the side wall of the graphite tray through a flexible connecting member; The gallium nitride single crystal thick film material is deposited on the substrate wafer and is located within the deposition window.

2. The substrate tray for preparing gallium nitride single crystal thick film material according to claim 1, wherein The height of the substrate wafer in the vertical direction is less than or equal to the depth of the receiving groove in the vertical direction.

3. The substrate tray for preparing a gallium nitride single crystal thick film material according to claim 1, characterized in that, The depth of the deposition window is greater than or equal to the thickness of the gallium nitride single crystal thick film material.

4. A substrate tray for preparing a gallium nitride single crystal thick film material according to any one of claims 1 to 3, characterized in that The number of deposition windows of the cylindrical silicon nitride ceramic protective cover is at least one, the number of receiving grooves of the graphite tray is at least one, and the positions and numbers of the deposition windows and the receiving grooves correspond one by one.

5. The substrate tray for preparing gallium nitride single crystal thick film material according to claim 4, wherein, The flexible connecting member includes: A positioning bolt; A fastening bolt; A spring, one end connected to the positioning bolt and the other end connected to the fastening bolt.

6. The substrate tray for preparing a gallium nitride single crystal thick film material according to claim 5, characterized in that The positioning bolt, the fastening bolt, and the spring are all made of ceramic.

7. The substrate tray for preparing gallium nitride single crystal thick film material according to claim 6, characterized in that, The positioning hole of the graphite tray is detachably connected to the positioning bolt.

8. The substrate tray for preparing gallium nitride single crystal thick film material according to claim 6, characterized in that, The mounting hole on the cylindrical side wall of the cylindrical silicon nitride ceramic protective cover is detachably connected to the fastening bolt.

9. The substrate tray for preparing gallium nitride single crystal thick film material according to claim 1, characterized in that, The substrate wafer includes, but is not limited to, sapphire, silicon, and silicon carbide single crystal substrate wafers.

10. The substrate tray for preparing a gallium nitride single crystal thick film material according to claim 1, wherein The size of the substrate wafer includes, but is not limited to, 2, 4, 6, 8, and 12 inches.

Images