A substrate tray for preparing gallium nitride single crystal thick film material

Abstract

The present invention relates to the technical field of semiconductor production equipment components, and in particular to a substrate tray for preparing gallium nitride single crystal thick film material, comprising: a graphite tray having a top recess for placing a substrate sheet, sidewalls having positioning holes, and a bottom with a graphite base; a cylindrical silicon nitride ceramic protective cover sleeved on the graphite tray, a top recess having a deposition window coaxially arranged with the recess, an inner diameter of the deposition window being less than or equal to the outer diameter of the substrate sheet, and a cylindrical sidewall having mounting holes, wherein the cylindrical sidewall of the silicon nitride ceramic protective cover is non-rigidly connected and fastened to the sidewall of the graphite tray via a flexible connector; and gallium nitride single crystal thick film material is deposited on the substrate sheet within the deposition window. The substrate tray provided by the present invention facilitates removal of the gallium nitride single crystal thick film material and the substrate sheet from the graphite tray, thereby improving the yield of the gallium nitride single crystal material, extending the service life of the graphite tray, and reducing the cost of consumables.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor material preparation and production equipment components, and in particular to a substrate tray for preparing gallium nitride single crystal thick film materials. Background Art

[0002] When using the hydride vapor phase epitaxy (HVPE) process to heteroepitaxially grow gallium nitride (GaN) single crystal thick film material on a heterogeneous substrate, the existing technology uses a graphite tray coated with silicon carbide. The substrate is placed in a groove on the top of the graphite tray. To prevent the substrate from being crushed and broken due to lateral expansion of the substrate or lateral contraction of the graphite tray during large temperature increases and decreases, and to facilitate the placement of the substrate, a gap of 2-5 mm is typically reserved between the outer periphery of the substrate and the inner wall of the graphite tray groove. The graphite tray with the substrate is mounted on a substrate rotating base within the reaction chamber of the hydride vapor phase epitaxy equipment. When depositing and growing the gallium nitride single crystal thick film material on the substrate, gallium nitride single crystal or polycrystalline material will inevitably be deposited in the gap between the upper surface of the graphite tray and the groove between the graphite tray and the substrate. In some cases, the gap between the groove of the graphite tray and the substrate will stick to or even fill up. This will lead to the following problems: First, during the significant cooling process after the deposition of the gallium nitride single crystal thick film material, the graphite tray shrinks and squeezes the gallium nitride thick film material or the substrate sheet, causing the gallium nitride single crystal thick film material or the substrate sheet to break, thereby affecting the material yield; second, the substrate sheet is difficult to remove smoothly from the graphite tray; third, removing the gallium nitride material deposited on the surface of the graphite tray requires a significantly extended high-temperature and high-vacuum baking time, which greatly shortens the service life of the graphite tray's silicon carbide protective coating and increases the cost of graphite tray consumables. Summary of the Invention

[0003] The present invention provides a substrate tray for preparing gallium nitride single crystal thick film material, which is used to solve the problems of how to avoid the deposition of gallium nitride material on the upper surface of the graphite tray and in the gap between the graphite tray and the substrate sheet, resulting in low material yield, difficulty in removing the substrate sheet and the gallium nitride single crystal thick film material, and high cost of graphite tray consumables.

[0004] The present invention provides a substrate tray for preparing a gallium nitride single crystal thick film material, comprising:

[0005] A graphite tray with a receiving slot for placing a substrate sheet on the top, positioning holes on the side walls, and a graphite base at the bottom that can be mounted on a substrate rotating base in a hydride vapor phase epitaxy reaction chamber;

[0006] A cylindrical silicon nitride ceramic protective cover is sleeved on the graphite tray. A deposition window is provided on the top of the cylindrical silicon nitride ceramic protective cover. The deposition window is coaxially arranged with the receiving groove of the graphite tray, and the inner diameter of the deposition window is less than or equal to the outer diameter of the substrate. A mounting hole is provided on the cylindrical side wall of the cylindrical silicon nitride ceramic protective cover. The cylindrical side wall of the cylindrical silicon nitride ceramic protective cover is non-rigidly connected to the side wall of the graphite tray through a flexible connector.

[0007] A gallium nitride single crystal thick film material is deposited on the substrate and is located within the deposition window.

[0008] In some embodiments, the height of the substrate sheet in the vertical direction is less than or equal to the depth of the receiving groove in the vertical direction.

[0009] In some embodiments, the depth of the deposition window is greater than or equal to the thickness of the gallium nitride single crystal thick film material.

[0010] In some embodiments, the cylindrical silicon nitride ceramic protective cover has at least one deposition window, the graphite tray has at least one receiving slot, and the positions and numbers of the deposition windows and the receiving slots correspond one to one.

[0011] In some embodiments, the flexible connector includes:

[0012] Positioning bolts;

[0013] Tighten the bolts;

[0014] A spring, one end of which is connected to the positioning bolt, and the other end is connected to the fastening bolt.

[0015] In some embodiments, the positioning bolt, the fastening bolt, and the spring are all made of ceramic.

[0016] In some embodiments, the positioning hole of the graphite tray is detachably connected to the positioning bolt.

[0017] In some embodiments, the mounting holes on the cylindrical side wall of the cylindrical silicon nitride ceramic protective cover are detachably connected to the fastening bolts.

[0018] In some embodiments, the substrate includes but is not limited to sapphire, silicon, or silicon carbide single crystal substrates.

[0019] In some embodiments, the size of the substrate sheet includes, but is not limited to, 2, 4, 6, 8, and 12 inches.

[0020] The beneficial effects of the present invention are as follows: a substrate tray for preparing gallium nitride single crystal thick film material of the present invention is provided with a cylindrical silicon nitride ceramic protective cover which is sleeved on a graphite tray, a deposition window is opened on the top of the cylindrical silicon nitride ceramic protective cover, the inner diameter of the deposition window is less than or equal to the outer diameter of the substrate sheet, gallium nitride single crystal thick film material is deposited on the substrate sheet through the deposition window, the cylindrical silicon nitride ceramic protective cover covers the upper surface of the graphite tray and the gap between the graphite tray and the substrate sheet, and can prevent gallium nitride material from being deposited on the upper surface of the graphite tray and the gap between the graphite tray and the substrate sheet. After the deposition is completed, the cylindrical silicon nitride ceramic protective cover is placed on the graphite tray. The cylindrical silicon nitride ceramic protective cover is removed from the graphite tray, and the gap between the substrate sheet and the graphite tray is used to facilitate the removal of the gallium nitride single crystal thick film material and the substrate sheet. In addition, the cooling and shrinkage of the graphite tray will not crush the gallium nitride single crystal thick film material layer or the substrate sheet, thereby improving the material yield rate. No gallium nitride single crystal or polycrystalline material is deposited on the graphite tray, so high-temperature baking and cleaning are not required. Only a small amount of gallium nitride material is deposited on the cylindrical silicon nitride ceramic protective cover. Gallium nitride is difficult to nucleate and grow on the cylindrical silicon nitride ceramic protective cover, which is more conducive to high-temperature baking and cleaning, thereby extending the service life of the graphite tray and reducing the cost of consumables. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 is a cross-sectional view of a substrate tray for preparing gallium nitride single crystal thick film material according to the present invention;

[0022] Figure 2 yes Figure 1 Schematic diagram of the structure of the flexible connector shown.

[0023] In the accompanying drawings, 1. graphite tray; 11. receiving groove; 12. positioning hole; 13. graphite base; 2. cylindrical silicon nitride ceramic protective cover; 21. deposition window; 22. mounting hole; 3. substrate sheet; 4. gallium nitride single crystal thick film material; 5. flexible connector; 51. positioning bolt; 52. fastening bolt; 53. spring. DETAILED DESCRIPTION

[0024] The following will clearly and completely describe the technical solutions of the present invention in conjunction with the embodiments. Obviously, the embodiments described are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0025] As described in the background, when using conventional graphite trays to deposit gallium nitride single crystal thick film materials, gallium nitride single crystal or polycrystalline material is deposited on the upper surface of the graphite tray and in the gap between the graphite tray and the substrate sheet. This results in low material yield, difficulty in removing the substrate sheet and gallium nitride single crystal thick film material, and high graphite tray consumables costs. Therefore, how to prevent gallium nitride material from depositing on the upper surface of the graphite tray and in the gap between the graphite tray and the substrate sheet, thereby improving material yield, facilitating the removal of gallium nitride single crystal thick film material products and substrate sheets, and reducing the cost of graphite tray consumables has become a pressing technical problem for those skilled in the art.

[0026] To solve the above problems, refer to Figure 1 and Figure 2 The present invention provides a substrate tray for preparing gallium nitride single crystal thick film materials, comprising: a graphite tray 1 and a cylindrical silicon nitride ceramic protective cover 2. A receiving groove 11 for receiving a substrate sheet 3 is defined on the top of the graphite tray 1. The receiving groove 11 has the same shape as the substrate sheet 3, and can be circular. The dimensions of the receiving groove 11 are larger than those of the substrate sheet 3. The cylindrical silicon nitride ceramic protective cover 2 is sleeved onto the graphite tray 1. A deposition window 21 is defined on the top of the cylindrical silicon nitride ceramic protective cover 2. The deposition window 21 is coaxial with the receiving groove 11, i.e., the centers of the deposition window 21 and the receiving groove 11 are vertically aligned, and the inner diameter of the deposition window 21 is less than or equal to the outer diameter of the substrate sheet 3. Thus, when preparing the gallium nitride single crystal thick film material by hydride vapor phase epitaxy deposition, the gallium nitride single crystal thick film material 4 passes through the deposition window 21 and is completely deposited on the substrate sheet 3, with the gallium nitride single crystal thick film material 4 located within the deposition window 21. The thickness of the gallium nitride single crystal thick film material deposited by the present invention is no less than 50µm.

[0027] Preferably, the height of the substrate sheet 3 is less than or equal to the depth of the receiving groove 11 .

[0028] Preferably, the substrate piece 3 includes but is not limited to sapphire, silicon, or silicon carbide single crystal substrate pieces, and the size of the substrate piece 3 includes but is not limited to 2, 4, 6, 8, or 12 inches.

[0029] Preferably, the depth of the deposition window 21 is greater than or equal to the thickness of the gallium nitride single crystal thick film material 4. If the gallium nitride single crystal thick film material 4 grows laterally beyond the depth of the deposition window 21, it will be difficult to remove the cylindrical silicon nitride ceramic protective cover 2. In addition, the prepared gallium nitride single crystal thick film material 4 may have an irregular shape, affecting product quality.

[0030] Preferably, silicon nitride ceramic is selected as the material of the cylindrical silicon nitride ceramic protective cover 2. On the one hand, silicon nitride ceramic material is not conducive to the nucleation and crystallization growth of gallium nitride, so only a very small amount of gallium nitride material can be deposited on the upper surface of the cylindrical silicon nitride ceramic protective cover 2 and the inner wall of the deposition window, which is convenient for cleaning the cylindrical silicon nitride ceramic protective cover 2; on the other hand, during the cooling process, the shrinkage of silicon nitride ceramic is smaller than that of gallium nitride single crystal thick film material. After the gallium nitride single crystal thick film material 4 is prepared, it is easy to take out from the deposition window 21.

[0031] Preferably, the cylindrical silicon nitride ceramic protective cover 2 has at least one deposition window, and the graphite tray 1 has at least one receiving slot. The deposition windows 21 of the cylindrical silicon nitride ceramic protective cover 2 correspond one-to-one with the receiving slots 11 of the graphite tray 1. Providing a cylindrical silicon nitride ceramic protective cover 2 with multiple deposition windows 21 and a graphite tray 1 with multiple receiving slots 11 facilitates the simultaneous preparation of multiple gallium nitride single crystal thick film materials 4, thereby improving production efficiency. Exemplary numbers of receiving slots 11 for supporting substrate sheets 3 include, but are not limited to, 1, 3, 4, 5, 6, 7, 13, 15, 19, and 20.

[0032] Preferably, a substrate tray for preparing gallium nitride single crystal thick film material further includes a flexible connector 5, one end of which is connected to the graphite tray 1 and the other end is connected to the cylindrical silicon nitride ceramic protective cover 2. The flexible connector 5, which is a non-rigid connection, not only secures the graphite tray 1 to the cylindrical silicon nitride ceramic protective cover 2 but also prevents the cylindrical silicon nitride ceramic protective cover 2 from cracking or breaking due to stress caused by expansion or contraction of the graphite tray 1 during large temperature increases and decreases, thereby extending the service life of the cylindrical silicon nitride ceramic protective cover 2.

[0033] Preferably, the flexible connector 5 includes a positioning bolt 51 , a fastening bolt 52 and a spring 53 . One end of the spring 53 is connected to the positioning bolt 51 , and the other end is connected to the fastening bolt 52 .

[0034] Preferably, the materials of the positioning bolt 51, the fastening bolt 52 and the spring 53 are all ceramic, among which the positioning bolt 51 and the fastening bolt 52 are made of silicon nitride ceramic material, the spring 53 is made of high-temperature resistant and corrosion-resistant ceramic material, and the outer end surface of the fastening bolt 52 is processed with a hexagonal countersunk hole to facilitate the installation and disassembly of the fastening bolt 52.

[0035] Preferably, a positioning hole 12 is provided on the outer periphery of the graphite tray 1 , and the positioning hole 12 is detachably connected to the positioning bolt 51 .

[0036] Preferably, the cylindrical silicon nitride ceramic protective cover 2 has a mounting hole 22 defined around its circumference, and the mounting hole 22 is detachably connected to the fastening bolt 52. Specifically, in the exemplary embodiment, the mounting hole 22 is internally threaded, and the fastening bolt 52 is externally threaded. The mounting hole 22 and the fastening bolt 52 are threadedly connected, thereby achieving a detachable connection between the silicon nitride ceramic protective cover 2 and the flexible connector 5.

[0037] Specifically, in the exemplary embodiment, there are multiple positioning holes 12, mounting holes 22 and flexible connectors 5, and the graphite tray 1 and the cylindrical silicon nitride ceramic protective cover 2 are connected and fixed by multiple flexible connectors 5, thereby realizing a non-rigid connection between the graphite tray 1 and the cylindrical silicon nitride ceramic protective cover 2.

[0038] Preferably, the substrate tray can be mounted upright or upside down on the substrate rotation base of the hydride vapor phase epitaxy equipment.

[0039] Specifically, in the demonstration example, the substrate tray of the present invention is used to prepare gallium nitride single crystal thick film material on a 6-inch sapphire substrate sheet 3: the substrate sheet 3 is a 6-inch sapphire substrate sheet, the inner diameter of the receiving groove 11 is 1-2 mm larger than the outer diameter of the 6-inch sapphire substrate sheet 3, and the depth of the receiving groove 11 is 0.2 mm smaller than the thickness of the 6-inch sapphire substrate sheet 3, ensuring that the 6-inch sapphire substrate sheet 3 is completely placed flat in the receiving groove 11, and the inner diameter of the deposition window 21 is 0.2-2 mm smaller than the outer diameter of the 6-inch sapphire substrate sheet 3. The distance between the cylindrical inner wall of the cylindrical silicon nitride ceramic protective cover 2 and the upper outer wall of the graphite tray 1 is 1mm-3mm, and a non-rigid connection is achieved through a flexible connector 5. Symmetrically arranged positioning holes 12 are provided on the periphery of the graphite tray 1. The inner diameter of the positioning hole 12 is 3mm-6mm and the hole depth is 5mm-10mm. The outer periphery of the cylindrical silicon nitride ceramic protective cover 2 is provided with a mounting hole 22. The mounting hole 22 is a stepped hole, including an outer stepped hole and an inner stepped hole. An internal thread is provided in the outer stepped hole. The outer stepped hole has a hole depth of 5mm and an inner diameter of 8mm. The inner stepped hole has a hole depth of 5mm and an inner diameter of 5mm. The mounting hole 22 is concentric with the positioning hole 12 of the graphite tray 1 in the horizontal direction. A graphite base 13 is provided at the bottom of the graphite tray 1. The outer diameter of the graphite base 13 is no larger than the outer wall of the silicon nitride ceramic protective cover 2. The graphite base 13 is adapted to the substrate rotating base of the hydride vapor phase epitaxy equipment. Then, the graphite tray 1 is installed on the substrate rotating base in the reaction chamber of the hydride vapor phase epitaxy equipment, and the gallium nitride single crystal thick film material 4 is deposited using the hydride vapor phase epitaxy process, with a film thickness of 0.5-1.5 mm.

[0040] Specifically, before using the substrate tray of the present invention to prepare the gallium nitride single crystal thick film material 4, the graphite tray 1 is first placed upright, and then a 6-inch sapphire substrate sheet is placed in the receiving groove 11 on the top of the graphite tray 1, and then covered with a cylindrical silicon nitride ceramic protective cover 2 and the cylindrical side wall of the cylindrical silicon nitride ceramic protective cover 2 is non-rigidly connected to the outer wall of the graphite tray 1 using a flexible connector 5. Finally, the substrate tray is inverted, that is, the deposition window 21 and the surface of the 6-inch sapphire substrate sheet are installed downward on the rotating substrate base of the hydride vapor phase epitaxy equipment.

[0041] Compared with the prior art, the present invention has the following beneficial effects:

[0042] 1. In the prior art, a graphite tray with a silicon carbide protective coating and a hydride vapor phase epitaxy process are used to prepare gallium nitride single crystal thick film materials. The present invention provides a cylindrical silicon nitride ceramic protective cover over a graphite tray. Silicon nitride ceramic material is not conducive to the nucleation and crystallization growth of gallium nitride. Therefore, only a very small amount of gallium nitride material can be deposited on the upper surface of the silicon nitride ceramic protective cover and the inner sidewall of the deposition window, making it easier to clean the cylindrical silicon nitride ceramic protective cover. By designing the inner diameter of the deposition window to be less than or equal to the outer diameter of the substrate, and the depth of the receiving groove of the graphite tray to be less than or equal to the thickness of the substrate, the top of the protective cover can block the top of the graphite tray and the gap between the receiving groove and the substrate. In other words, the gallium nitride material is completely deposited on the substrate, and not on the top surface of the graphite tray or in the gap between the graphite tray and the substrate. Thus, each time gallium nitride single crystal thick film deposition is completed, the graphite tray with the silicon carbide protective coating does not need to be subjected to a long-term high-temperature, high-vacuum baking. Only the small amount of gallium nitride deposited on the cylindrical silicon nitride ceramic protective cover needs to be subjected to a high-temperature, high-vacuum baking and cleaning process, and can be easily removed after a short baking time. This extends the service life of the graphite tray and improves the efficiency of gallium nitride material preparation.

[0043] 2. The inner diameter of the deposition window sidewall of the cylindrical silicon nitride ceramic protective cover is designed to be less than or equal to the outer diameter of the substrate, and the depth of the deposition window is greater than or equal to the height of the gallium nitride single crystal thick film material. In the temperature range from room temperature to high temperature of 1100℃, the thermal expansion coefficient of silicon nitride ceramic is small and the variation range is also very small (2.53-2.75×10 -6 / K), the C-plane thermal expansion coefficient of GaN single crystal thick film material is large and the variation range is also large (4.26-5.31×10 -6 / K), the average thermal expansion coefficient of polycrystalline graphite material is 4.0-8.0×10 -6 / K, the thermal expansion coefficient may increase when the temperature drops from 1100℃ to room temperature. After the gallium nitride single crystal thick film material is prepared by hydride vapor phase epitaxy, the side wall of the deposition window of the gallium nitride single crystal thick film material shrinks more than that of the silicon nitride ceramic material during the process of cooling from the high temperature of 1100℃ to room temperature, while the shrinkage of the graphite tray is smaller, making it easy for the gallium nitride single crystal thick film material to separate from the inner wall of the deposition window of the silicon nitride ceramic material. Since there is no problem of gap deposition and filling, the substrate sheet is also easy to separate from the inner wall of the holding groove of the graphite tray. In the process of removing the gallium nitride single crystal thick film material and the substrate sheet, damage to the edge of the gallium nitride single crystal thick film material, the edge of the substrate sheet and the silicon carbide coated graphite tray table near the holding groove is effectively avoided, making it easy to remove the gallium nitride single crystal thick film material and the substrate sheet, which is beneficial to improving the yield of the gallium nitride single crystal thick film material.

[0044] 3. By designing a suitable gap between the cylindrical inner wall of the cylindrical silicon nitride ceramic protective cover and the outer wall of the graphite tray, and adopting a flexible connector consisting of a high-temperature and corrosion-resistant ceramic spring, a silicon nitride ceramic positioning bolt and a fastening bolt, a non-rigid fastening connection between the cylindrical silicon nitride ceramic protective cover and the graphite tray is achieved. This prevents the cylindrical side wall of the cylindrical silicon nitride ceramic protective cover from cracking or breaking due to the force caused by the expansion or contraction of the outer wall of the graphite tray during large temperature increases and decreases, thereby improving the service life of the cylindrical silicon nitride ceramic protective cover.

[0045] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like to indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or component referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore should not be understood as limiting the present invention.

[0046] In addition, in the description of the present invention, “a plurality of” means at least two, for example, two, three, etc., unless otherwise clearly and specifically defined.

[0047] In the present invention, unless otherwise specified or limited, the terms "installed," "connected," "connect," "fixed," etc. should be understood in a broad sense. For example, they can refer to fixed connection, detachable connection, or integration; mechanical connection, electrical connection, or communication; direct connection or indirect connection through an intermediate medium; internal communication between two components or interaction between two components, unless otherwise specified. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0048] In the present invention, the terms "one embodiment", "some embodiments", "examples", "specific examples" or "some examples" mean that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification and the features of different embodiments or examples without contradiction.

[0049] Although the embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and are not to be construed as limitations on the present invention. A person skilled in the art may change, modify, replace and modify the above embodiments within the scope of the present invention.

Claims

1. A substrate tray for preparing gallium nitride single crystal thick film material, characterized in that: include: A graphite tray with a receiving slot for placing a substrate sheet on the top, positioning holes on the side walls, and a graphite base at the bottom that can be mounted on a substrate rotating base in a hydride vapor phase epitaxy reaction chamber; A cylindrical silicon nitride ceramic protective cover is sleeved on the graphite tray, a deposition window is provided on the top of the cylindrical silicon nitride ceramic protective cover, the deposition window is coaxially arranged with the receiving groove of the graphite tray, and the inner diameter of the deposition window is less than or equal to the outer diameter of the substrate sheet, and a mounting hole is provided on the cylindrical side wall of the cylindrical silicon nitride ceramic protective cover, and the cylindrical side wall of the cylindrical silicon nitride ceramic protective cover is connected to the side wall of the graphite tray by a flexible connector; A gallium nitride single crystal thick film material is deposited on the substrate and is located within the deposition window; The thermal expansion coefficient of silicon nitride ceramics is 2.53-2.75×10 -6 / K, the C-plane thermal expansion coefficient of GaN single crystal thick film material is 4.26-5.31×10 -6 / K.

2. A substrate tray for preparing gallium nitride single crystal thick film material according to claim 1, characterized in that: The height of the substrate sheet in the vertical direction is less than or equal to the depth of the receiving groove in the vertical direction.

3. The substrate tray for preparing gallium nitride single crystal thick film material according to claim 1, characterized in that: The depth of the deposition window is greater than or equal to the thickness of the gallium nitride single crystal thick film material.

4. A substrate tray for preparing gallium nitride single crystal thick film material according to any one of claims 1 to 3, characterized in that: The cylindrical silicon nitride ceramic protective cover has at least one deposition window, and the graphite tray has at least one receiving slot. The positions and numbers of the deposition windows and the receiving slots correspond one to one.

5. The substrate tray for preparing gallium nitride single crystal thick film material according to claim 4, characterized in that: The flexible connector includes: Positioning bolts; Tighten the bolts; A spring, one end of which is connected to the positioning bolt, and the other end of which is connected to the fastening bolt.

6. The substrate tray for preparing gallium nitride single crystal thick film material according to claim 5, characterized in that: The positioning bolt, the fastening bolt and the spring are all made of ceramic.

7. The substrate tray for preparing gallium nitride single crystal thick film material according to claim 6, characterized in that: The positioning hole of the graphite tray is detachably connected to the positioning bolt.

8. The substrate tray for preparing gallium nitride single crystal thick film material according to claim 6, characterized in that: The mounting holes on the cylindrical side wall of the cylindrical silicon nitride ceramic protective cover are detachably connected to the fastening bolts.

9. The substrate tray for preparing gallium nitride single crystal thick film material according to claim 1, characterized in that: The substrate includes sapphire, silicon, and silicon carbide single crystal substrate.

10. The substrate tray for preparing gallium nitride single crystal thick film material according to claim 1, characterized in that: The sizes of the substrate sheets are 2, 4, 6, 8, and 12 inches.

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