Radiation-enhanced single photon emitter and method of making

Abstract

The application belongs to the technical field of single photon emitters, and relates to a radiation enhancement type single photon emitter and a preparation method, which comprise an hBN thin layer and an emitter; the emitter is arranged above the hBN thin layer, and the emitter is located within a range of 10 nm above the surface of the hBN thin layer. By utilizing the hyperbolic dispersion characteristics of the hBN thin layer, Purcell enhancement and enhancement of photon coupling output power can be realized in a wide band range. The problems of low photon coupling output efficiency and Purcell effect enhancement in the existing single photon emitter are solved. Therefore, the application range of the single photon emitter in photonics and quantum optics is expanded. Compared with the existing single photon emitter, the application has a simple structure, does not need a complex manufacturing process, and reduces manufacturing cost.

Description

Technical Field

[0001] This invention belongs to the field of single-photon emitter technology, and relates to a radiation-enhanced single-photon emitter and its preparation method. Background Technology

[0002] In modern photonics, the manipulation and control of light at the nanoscale is an important research direction with broad application prospects in quantum information processing, sensing, and communication. Among these, the Purcell effect—enhancing the spontaneous emission rate of a single-photon emitter through specific optical structures—is one of the key technologies for realizing efficient photonic devices. Traditional methods for enhancing the Purcell effect in single-photon emitters typically rely on microcavities, waveguides, or plasmonic structures, but these methods are often limited by narrowband operation and complex fabrication processes. In recent years, hyperbolic materials, due to their unique optical properties such as subwavelength confinement and high optical density of states, have become an emerging platform for manipulating photon-matter interactions. Hexagonal boron nitride (hBN), as a natural hyperbolic material, exhibits excellent hyperbolic dispersion characteristics in a specific mid-infrared frequency range and requires no complex fabrication processes, making it an ideal material for enhancing photon-matter interactions.

[0003] Single-photon emitters (SPEs) are among the key components. Traditional SPEs have relatively low radiation efficiency, and enhancing the Purcell effect is crucial for improving their radiation performance. Currently, the main technical solutions for enhancing the Purcell effect in traditional SPEs include the following: The first is using microcavity structures, placing the SPE within a microcavity and leveraging its high quality factor and small mode volume to enhance the spontaneous emission rate. The second is employing waveguide structures, designing specific waveguide modes to enhance the interaction between photons and matter. The third is utilizing plasmonic structures, enhancing the Purcell effect through the localized surface plasmon resonance effect of metallic nanostructures.

[0004] However, these existing technologies have some significant drawbacks. For microcavity structures, while high Purcell enhancement can be achieved, their operating bandwidth is typically narrow, limiting their potential in broadband applications. Furthermore, the fabrication process for microcavities is complex and costly. For waveguide structures, although some Purcell enhancement can be achieved, the enhancement effect is often limited by the waveguide's size and material properties, and efficient photon extraction is difficult to achieve. For plasmonic structures, although they exhibit high localized field enhancement, the losses from metallic materials are significant, reducing device efficiency. Summary of the Invention

[0005] The purpose of this invention is to provide a radiation-enhanced single-photon emitter and its fabrication method, so as to solve the problems of enhanced photon Purcell effect and low photon coupling output efficiency in existing single-photon emitters.

[0006] To achieve the above objectives, the present invention employs the following technical solution:

[0007] In a first aspect, this application discloses a radiation-enhanced single-photon emitter, comprising an hBN thin layer and an emitter; the emitter is disposed above the hBN thin layer and is located within a range of 10 nm above the surface of the hBN thin layer.

[0008] Preferably, the emitter is a dipole emitter, which is disposed above the hBN thin layer.

[0009] Preferably, the thickness of the hBN thin layer is 10~600 nm.

[0010] Preferably, the hBN thin layer exhibits Type-II hyperbolic dispersion characteristics in the wavelength range of 6.1–7.3 μm.

[0011] Preferably, the hBN thin layer exhibits Type-I hyperbolic dispersion characteristics in the wavelength range of 12.1–13.6 μm.

[0012] Preferably, the orientation of the dipole emitter is in-plane.

[0013] Preferably, the dipole emitter is oriented perpendicular to the plane.

[0014] Preferably, the dipole emitter is wavelength-tuned to match the hyperbolic dispersion region of the hBN thin layer.

[0015] Secondly, this application also discloses a method for fabricating a radiation-enhanced single-photon emitter as described in any one of the above claims, comprising: using a material with hyperbolic dispersion characteristics as a base, and placing an emitter on top of it to obtain a radiation-enhanced single-photon emitter.

[0016] Preferably, the transmitter is a dipole transmitter, then:

[0017] Using an hBN thin layer with a thickness of 10~600nm as a base, the dipole emitter is placed within a range of 10nm above the surface of the hBN thin layer.

[0018] Compared with the prior art, the present invention has the following beneficial effects:

[0019] This invention discloses a radiation-enhanced single-photon emitter that utilizes the hyperbolic dispersion properties of a thin hBN layer to achieve Purcell enhancement and photon coupling output power enhancement over a wide bandwidth. This expands its application range in photonics and quantum optics. Compared to existing single-photon emitters, this invention has a simpler structure and requires no complex manufacturing process, thus reducing manufacturing costs.

[0020] This invention discloses a radiation-enhanced single-photon emitter with a base made of a thin layer of hexagonal boron nitride (hBN). As a naturally hyperbolic material, hBN achieves its hyperbolic dispersion characteristics without complex manufacturing processes, thus simplifying the manufacturing process, reducing costs, and improving device reliability. Furthermore, hBN exhibits low material loss, particularly in the mid-infrared frequency range, effectively reducing energy loss and improving the efficiency of photonic devices. By optimizing the thickness of the hBN and the orientation of the emitter, this invention effectively extracts high-wavenumber photons, improving photon extraction efficiency and thereby enhancing the coupled output power of the single-photon emitter. This invention eliminates the need for complex manufacturing processes and the introduction of additional photon extraction structures or materials, simplifying device design and manufacturing, reducing manufacturing costs, device complexity, and hardware design difficulty, while avoiding manufacturing defects caused by complex manufacturing processes in existing technologies.

[0021] This invention discloses a radiation-enhanced single-photon emitter that achieves broadband Purcell enhancement and photon extraction by tuning the emission wavelength of the dipole emitter to match the hyperbolic dispersion characteristics of the hBN thin layer. Compared with existing technologies, this invention provides high tunability and flexibility, allowing optimization of the Purcell enhancement effect according to specific application requirements, thus solving the problem of lack of tunability and flexibility in existing technologies. Attached Figure Description

[0022] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0023] Figure 1 This is a schematic diagram of the structure of an embodiment of the present invention;

[0024] Figure 2 The diagram shows the dielectric constant distribution of the hBN thin film according to an embodiment of the present invention; where (a) is the real part distribution diagram and (b) is the imaginary part distribution diagram.

[0025] Figure 3The graphs show the Purcell factor as a function of wavelength at a depth of 10 nm above the hBN thin layer in an embodiment of the present invention, where (a) represents Type-II hyperbolic dispersion at a thickness of 10 nm; (b) represents Type-II hyperbolic dispersion at a thickness of 100 nm; (c) represents Type-II hyperbolic dispersion at a thickness of 600 nm; (d) represents Type-I hyperbolic dispersion at a thickness of 10 nm; (e) represents Type-I hyperbolic dispersion at a thickness of 100 nm; and (f) represents Type-I hyperbolic dispersion at a thickness of 600 nm.

[0026] Figure 4 The graphs show the photon coupling output power versus wavelength at a location 10 nm above the hBN thin layer in an embodiment of the present invention, where (a) represents Type-II hyperbolic dispersion at a thickness of 10 nm; (b) represents Type-II hyperbolic dispersion at a thickness of 100 nm; (c) represents Type-II hyperbolic dispersion at a thickness of 600 nm; (d) represents Type-I hyperbolic dispersion at a thickness of 10 nm; (e) represents Type-I hyperbolic dispersion at a thickness of 100 nm; and (f) represents Type-I hyperbolic dispersion at a thickness of 600 nm.

[0027] Wherein: 1-base; 2-transmitter. Detailed Implementation

[0028] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. The components of the embodiments of the present invention described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0029] Therefore, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the invention without inventive effort are within the scope of protection of the invention.

[0030] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0031] In the description of the embodiments of the present invention, it should be noted that if terms such as "upper," "lower," "horizontal," or "inner" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of the invention is in use, they are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention. Furthermore, terms such as "first" and "second" are only used to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0032] Furthermore, the use of the term "horizontal" does not imply that the component must be absolutely horizontal, but rather that it can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal than "vertical," and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0033] In the description of the embodiments of the present invention, it should also be noted that, unless otherwise explicitly specified and limited, the terms "set," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in the present invention according to the specific circumstances.

[0034] The present invention will now be described in further detail with reference to the accompanying drawings:

[0035] See Figure 1 This application discloses a radiation-enhanced single-photon emitter, comprising an hBN thin layer 1 and an emitter 2; the emitter 2 is disposed above the hBN thin layer 1 and is located within a 10 nm range above the surface of the hBN thin layer. Utilizing the hyperbolic dispersion characteristics of the hBN thin layer, Purcell enhancement and optical coupling output power enhancement can be achieved over a wide bandwidth, thereby expanding its application range in photonics and quantum optics.

[0036] In some embodiments, the emitter 2 is a dipole emitter disposed above a thin layer of hexagonal boron nitride (hBN). This emitter utilizes the hyperbolic dispersion properties of hexagonal boron nitride (hBN) to achieve Purcell enhancement and optical coupling output power enhancement over a wide bandwidth, thereby expanding its application range in photonics and quantum optics. Simultaneously, as a naturally hyperbolic material, hexagonal boron nitride (hBN) can achieve its hyperbolic dispersion properties without complex manufacturing processes, thus simplifying the manufacturing process, reducing costs, and improving device reliability. Furthermore, hexagonal boron nitride (hBN) exhibits low material loss, particularly in the mid-infrared frequency range, effectively reducing energy loss and improving the efficiency of photonic devices. By optimizing the thickness of the hexagonal boron nitride (hBN) and the orientation of the emitter, this invention can effectively extract high-wavenumber photons, improve photon extraction efficiency, and thus enhance the coupling output power of the single-photon emitter. Finally, by adjusting the thickness of hexagonal boron nitride (hBN) and the emission wavelength, this invention provides a high degree of tunability and flexibility, enabling optimization of the Purcell enhancement effect according to specific application requirements.

[0037] In some embodiments, the thickness of the hexagonal boron nitride (hBN) thin layer is 10~600 nm.

[0038] In some embodiments, the present invention addresses the problems of enhanced photon Purcell effect and low photon coupling output efficiency in existing single-photon emitters by proposing a radiation-enhanced single-photon emitter comprising a hexagonal boron nitride (hBN) thin layer and a dipole emitter.

[0039] The hexagonal boron nitride (hBN) thin layer, in this invention, can be set to a thickness of 10 nanometers to 600 nanometers, exhibiting Type-II hyperbolic dispersion characteristics in the wavelength range of 6.1–7.3 micrometers and Type-I hyperbolic dispersion characteristics in the wavelength range of 12.1–13.6 micrometers, such as... Figure 2 As shown.

[0040] In some embodiments, the dipole emitter is located within a 10-nanometer range above the surface of the hexagonal boron nitride (hBN) thin layer. The dipole emitter is oriented in the x / y or z direction and is wavelength-tuned to match the hyperbolic dispersion region of the hexagonal boron nitride (hBN) thin layer. Specifically, when the dipole emitter is oriented in the x / y or z direction, and the wavelength of the emitted light wave matches the wavelength of type-II or type-I, the tuning is considered complete. Then, by adjusting the thickness of the hexagonal boron nitride (hBN) thin layer, the Purcell factor and photon coupling output power of photons corresponding to different thicknesses of hexagonal boron nitride (hBN) thin layers can be obtained.

[0041] The Purcell effect enhancement mechanism of the single-photon emitter involves the emission of photons when the dipole emitter is excited. These photons then interact with hexagonal boron nitride (hBN) material. Since hexagonal boron nitride (hBN) is a naturally hyperbolic material, it exhibits hyperbolic dispersion characteristics in a specific mid-infrared frequency range. This hyperbolic dispersion characteristic enables hexagonal boron nitride (hBN) to support high-wavenumber optical modes, which are highly localized within the hexagonal boron nitride (hBN).

[0042] The coupling output mechanism of the single-photon emitter is as follows: although the photon modes inside hexagonal boron nitride (hBN) are highly localized, some photons can still be effectively coupled into the external environment by converting high-wavelength modes to low-wavelength modes through the surface phonon polaritons of hBN. This coupling process is affected by factors such as the thickness of the hexagonal boron nitride (hBN), the emitter orientation, and the emission wavelength. By optimizing these parameters, efficient optical coupling and power extraction can be achieved.

[0043] Example

[0044] In this embodiment, the dipole emitter was placed 10 nanometers above the surface of a hexagonal boron nitride (hBN) thin layer. Purcell factor distributions at different thicknesses were obtained by adjusting the hBN thickness to 10 nanometers, 100 nanometers, and 600 nanometers. The results show that the Purcell factor is significantly enhanced within a specific wavelength range, especially in the type-II and type-I hyperbolic dispersion regions, such as... Figure 3 As shown in the figure, a~c represent the Purcell factors calculated for type II hyperbolic dispersion, and d~f represent the Purcell factors calculated for type I hyperbolic dispersion. The pink area represents hyperbolic dispersion, while the other areas represent non-hyperbolic dispersion. "xy" represents the Purcell factor when the dipole emitter is oriented in the x and y directions, "z" represents the Purcell factor when the dipole emitter is oriented in the z direction, and "ave" represents the average Purcell factor when the dipole emitter is oriented in the x, y, and z directions.

[0045] In this embodiment, the dipole emitter was placed 10 nanometers above the surface of a thin hexagonal boron nitride (hBN) layer. Photon extraction efficiency distributions at different thicknesses were obtained by adjusting the hBN thickness to 10 nanometers, 100 nanometers, and 600 nanometers. The results show that the photon extraction efficiency is significantly improved within a specific wavelength range, especially in the type-II and type-I hyperbolic dispersion regions, such as... Figure 4As shown in the figure, a~c represent the output coupling power extraction calculated for type-II hyperbolic dispersion, and d~f represent the coupling output power extraction calculated for type-I hyperbolic dispersion. "xy" represents the coupling output power when the dipole emitter is oriented in the x and y directions, "z" represents the coupling output power when the dipole emitter is oriented in the z direction, and "ave" represents the average value of the coupling output power when the dipole emitter is oriented in the x, y, and z directions. The extracted coupling power values ​​were all normalized using the corresponding power emitted by the dipole source located above the surface of the hexagonal boron nitride (hBN) thin layer.

[0046] This application also discloses a method for fabricating a radiation-enhanced single-photon emitter. A material with hyperbolic dispersion characteristics is used as a base 1, and an emitter 2 is placed on top of it to obtain the radiation-enhanced single-photon emitter. The emitter 2 is a dipole emitter, the base 1 is a hexagonal boron nitride (hBN) thin layer, and the dipole emitter is positioned within a 10-nanometer range above the surface of the hexagonal boron nitride (hBN) thin layer.

[0047] The hexagonal boron nitride (hBN) thin layer, with a thickness of 10 nanometers to 600 nanometers, exhibits Type-II or Type-I hyperbolic dispersion characteristics in the wavelength range of 6.1–7.3 micrometers or 12.1–13.6 micrometers.

[0048] The dipole emitter is located on the surface of the hexagonal boron nitride (hBN) thin layer, oriented in the x / y or z direction, and is wavelength-tuned to match the hyperbolic dispersion region of the hexagonal boron nitride (hBN) thin layer.

[0049] The distribution of the Purcell factor and the power of the photon coupling output can be adjusted by regulating the thickness of the hexagonal boron nitride (hBN) thin layer, the orientation of the dipole emitter, and the emission wavelength.

[0050] A dipole emitter was placed 10 nm above the surface of a thin hexagonal boron nitride (hBN) layer. By adjusting the thickness of the hBN (10 nm, 100 nm, and 600 nm), as well as the orientation and emission wavelength of the dipole emitter, the Purcell factor distribution of photons at different thicknesses was obtained. The results show that within a specific wavelength range, namely the type-II and type-I hyperbolic dispersion regions, the Purcell factor and the coupled output power of photons are significantly enhanced.

[0051] A dipole emitter is located within a 10-nanometer radius above the surface of the hBN thin layer, oriented in either the xy or z direction, and the wavelength of the emitted light wave can be adjusted. When the dipole emitter is oriented in either the xy or z direction, and the wavelength of the emitted light wave matches that of type-II or type-I, tuning is considered complete. Then, by adjusting the thickness of the hBN thin layer, the Purcell factor and photon coupling output power corresponding to different thicknesses of the hBN thin layer can be obtained.

[0052] In some embodiments, the present invention uses hexagonal boron nitride (hBN) as the core material to enhance the photonic Purcell effect. In practical engineering, other materials with hyperbolic dispersion characteristics, such as artificial hyperbolic metamaterials or natural hyperbolic materials, are also within the scope of the technical solutions proposed in this invention.

[0053] In some embodiments, a dipole emitter is selected as the emitter in the implementation of the present invention. In practical engineering, other types of emitters, such as quantum dots, quantum wells, or quantum wires, are also within the scope of the technical solutions proposed in this invention.

[0054] In summary, this application discloses a radiation-enhanced single-photon emitter that utilizes the hyperbolic dispersion characteristics of hexagonal boron nitride (hBN) to achieve Purcell enhancement and optical coupling output power enhancement over a wide bandwidth, thereby expanding its application range in photonics and quantum optics. Furthermore, as a naturally hyperbolic material, hexagonal boron nitride (hBN) can achieve its hyperbolic dispersion characteristics without complex manufacturing processes, simplifying the manufacturing process, reducing costs, and improving device reliability. In addition, hexagonal boron nitride (hBN) exhibits low material loss, particularly in the mid-infrared frequency range, effectively reducing energy loss and improving the efficiency of photonic devices. By optimizing the thickness of hexagonal boron nitride (hBN) and the orientation of the emitter, this invention can effectively extract high-wavenumber photons, improving photon extraction efficiency and thus enhancing the coupled output power of the single-photon emitter. Finally, by adjusting the thickness of hexagonal boron nitride (hBN) and the emission wavelength, this invention provides high tunability and flexibility, enabling optimization of the Purcell enhancement effect according to specific application requirements.

[0055] The above are merely preferred embodiments of the present invention and are not intended to limit the present invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A radiation-enhanced single-photon emitter, characterized in that, It includes an hBN thin layer (1) and an emitter (2); the emitter (2) is a dipole emitter, which is disposed above the hBN thin layer (1) and is located within 10 nm above the surface of the hBN thin layer; the thickness of the hBN thin layer is 100~600 nm; the orientation of the dipole emitter is in-plane; the dipole emitter is wavelength-tuned to match the hyperbolic dispersion region of the hBN thin layer.

2. The radiation-enhanced single-photon emitter according to claim 1, wherein the hBN thin layer exhibits Type-II hyperbolic dispersion characteristics in the wavelength range of 6.1–7.3 μm.

3. The radiation-enhanced single-photon emitter according to claim 1, wherein the hBN thin layer exhibits Type-I hyperbolic dispersion characteristics in the wavelength range of 12.1–13.6 μm.

4. A method for fabricating a radiation-enhanced single-photon emitter according to any one of claims 1 to 3, characterized in that, The emitter (2) is positioned above the hBN thin layer (1) and within a range of 10 nanometers above the surface of the hBN thin layer.

5. The method for fabricating a radiation-enhanced single-photon emitter according to claim 4, characterized in that, If the transmitter (2) is a dipole transmitter, then: Using an hBN thin layer with a thickness of 100~600nm as a base, the dipole emitter is placed within a range of 10 nanometers above the surface of the hBN thin layer.

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