Wafer surface sample preparation device and wafer surface sampling method based on wafer surface sample preparation device
By separating multiple partitions on the wafer surface and using automatic sampling components, the problems of air pollutant intake and extract dilution in the prior art are solved, and high-sensitivity wafer surface pollutant detection is achieved, and local process abnormalities can be found.
Patent Information
- Application Number
- CN202510432970.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-03
- Publication Date
- 2025-07-11
AI Technical Summary
The existing wafer surface sampling methods have problems such as air pollutants in, large amount of extract use, resulting in low detection limits, and inability to local sampling, which affects the accuracy and sensitivity of the detection results.
The wafer partitioning component is used to separate the surface to be sampled into multiple partitions, and the scanning liquid is automatically absorbed and sprayed through the sampling component, so that the contaminants are mixed or dissolved in the scanning liquid, forming the solution to be sampled, avoiding manual operations and soaking on the whole surface, and realizing automatic sampling.
It improves the sensitivity of the sampling method, can detect local pollution of the wafer, reduce pollution risks, improve detection limits, adapt to the selection of different scanning fluids, and achieve accurate sampling and data comparison of specific areas.
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Figure CN120293628A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of semiconductor technology, and in particular to a wafer surface sample preparation device and a wafer surface sampling method based thereon. Background Art
[0002] During the semiconductor process, it is necessary to sample, detect and analyze the contaminants on the surface of the wafer. Among the related sampling technologies, there is a method of manual immersion sampling. Specifically, the entire wafer is placed in a sampling tank, and the extraction liquid (including ultrapure water UPW, acidic solution, oxidizing solution, organic solvent, etc.) is sucked with a pipette to rinse the wafer surface for ion washing sampling; or, the wafer is directly immersed in the extraction liquid to extract the surface ions for immersion sampling. There is also a method of sampling the surface contaminants of the wafer by automatic spraying. Specifically, the wafer is placed in a closed spray sampling device, and the spray head located above the wafer is controlled to automatically and continuously spray the extraction liquid onto the wafer surface, and the liquid dripping at the bottom of the device is automatically collected for sampling.
[0003] However, the above-mentioned manual immersion sampling method is a manual operation and the sampling tank is not a closed space during operation, so there will be air pollutants or human pollutants introduced, which will affect the accuracy of subsequent test results. In the manual immersion sampling method, since the wafer is immersed in the extraction liquid, and the automatic spray sampling method continuously sprays the extraction liquid, both have the problem of large amount of extraction liquid usage, resulting in the ions on the wafer surface being diluted by a large amount of extraction liquid, reducing the detection limit and poor sensitivity. Moreover, the above two types of sampling methods are unable to sample contaminants in local locations of the wafer, and thus are unable to detect local process abnormalities. Summary of the invention
[0004] A series of simplified concepts are introduced in the Summary of the Invention, which will be further described in detail in the Detailed Description of the Invention. The Summary of the Invention does not mean to attempt to define the key features and essential technical features of the claimed technical solution, nor does it mean to attempt to determine the scope of protection of the claimed technical solution.
[0005] In view of the existing problems, a first aspect of an embodiment of the present invention provides a wafer surface sample preparation device, the wafer surface sample preparation device comprising:
[0006] A wafer placement component, used for placing and fixing the wafer on which the surface sample is to be prepared;
[0007] A wafer partitioning component is disposed on the surface to be sampled of the wafer to divide the surface to be sampled into at least two partitions to be sampled;
[0008] A sampling component, which is used to automatically suck the scanning liquid and automatically spray the scanning liquid onto the partition to be sampled, so that the pollutants on the partition to be sampled are mixed and / or dissolved in the scanning liquid to form a solution to be sampled; and is used to automatically take part or all of the solution to be sampled from the partition to be sampled.
[0009] In some embodiments of the present application, the wafer surface sample preparation device further includes:
[0010] At least one scanning liquid container, and each scanning liquid container is used to store a kind of scanning liquid;
[0011] A temperature control device, which is used to adjust the temperature of the scanning liquid in the scanning liquid container.
[0012] In some embodiments of the present application, the wafer surface sample preparation device further includes:
[0013] At least one sample collection tank, and the sample collection tank is used to store part or all of the solution to be sampled automatically taken by the sampling component from the partition to be sampled; the sampling component is also used to discharge part or all of the solution to be sampled taken from the partition to be sampled into the sample collection tank.
[0014] In some embodiments of the present application, the sampling component includes:
[0015] A syringe and a nozzle connected to the syringe through a connecting pipe; the syringe is used to control the nozzle to perform sucking or discharging operations, and is also used to collect the liquid overflowing from the nozzle; the nozzle is used to suck or discharge the scanning liquid, and is also used to suck or discharge the solution to be sampled;
[0016] A moving bracket, the nozzle is arranged on the moving bracket, and the moving bracket is used to drive the nozzle to perform translational motion along the X-axis or Y-axis or Z-axis, so that the nozzle reaches the target position to perform sucking or discharging operations.
[0017] In some embodiments of the present application, the sampling component is further used to control the volume of the scanning liquid sprayed onto the partition to be sampled, so that the thickness of the liquid film formed on the partition to be sampled does not exceed the height of the wafer partitioning component in the direction perpendicular to the surface to be sampled.
[0018] In some embodiments of the present application, the wafer partitioning component includes:
[0019] A main body and a sealing gasket arranged on one side of the main body facing the surface to be sampled, one side of the sealing gasket is in contact connection with the wafer, and the other side is in contact connection with the main body; the main body is adapted to the outer shape size of the wafer, and the projection of the sealing gasket on the wafer coincides with the projection of the main body on the wafer.
[0020] In some embodiments of the present application, the main body includes:
[0021] A first annular part;
[0022] A second annular portion that is concentrically arranged around and spaced from the first annular portion, the outer diameter of the second annular portion being equal to the diameter of the wafer; and,
[0023] At least two connecting portions connected between the first annular portion and the second annular portion, each connecting portion having opposite first and second ends, the first end of the connecting portion being connected to the first annular portion, and the second end of the connecting portion being connected to the second annular portion, so that the connecting portion, the first annular portion and the second annular portion together divide the surface to be sampled into a circular partition and at least two fan-shaped partitions.
[0024] In some embodiments of the present application, the wafer partitioning component further includes:
[0025] A mounting fixture disposed on the second annular portion and configured such that when the mounting fixture is in the first working mode, the main body and the gasket can be adjusted in position on the wafer; when the mounting fixture is in the second working mode, the positions of the main body and the gasket on the wafer cannot be adjusted, that is, the wafer partitioning component is installed.
[0026] In some embodiments of the present application, when the scanning liquid is ultrapure water, the material of the main body includes one of polycarbonate, polyetheretherketone, and polystyrene, and the material of the gasket includes one of styrene-butadiene rubber, butyl rubber, nitrile rubber, and silicone rubber; and / or,
[0027] When the scanning liquid is an acidic solution and / or an oxidizing solution, the material of the main body includes polytetrafluoroethylene or polyetheretherketone, and the material of the gasket includes one of ethylene-propylene rubber, fluororubber, and perfluororubber; and / or,
[0028] When the scanning liquid is an organic solvent, the material of the main body includes polytetrafluoroethylene, and the material of the gasket includes perfluororubber.
[0029] In some embodiments of the present application, the wafer surface sample preparation device further includes:
[0030] A housing having a sampling chamber, the wafer placement component and the sampling component are both accommodated in the sampling chamber, and the wafer placement component and the sampling component are respectively mounted on the housing;
[0031] A protective gas nozzle disposed on the housing and located on the first side of the sampling chamber, the protective gas nozzle is communicated with a protective gas supply component disposed outside the housing, and is used to introduce protective gas into the sampling chamber;
[0032] A waste discharge port disposed on the housing and located on the second side opposite to the position of the first side of the sampling chamber;
[0033] An openable and closable transfer gate is provided on the housing and configured to: when the transfer gate is opened, transfer the wafer into or out of the sampling chamber through the transfer gate, and transfer the wafer partitioning component into or out of the sampling chamber through the transfer gate; when the transfer gate is closed, the sampling chamber is made into a sealed space.
[0034] In a second aspect of the embodiments of the present invention, a wafer surface sampling method based on any one of the above wafer surface sample preparation devices is provided. The wafer surface sampling method includes the following steps:
[0035] Place the wafer on the wafer placement component with the surface to be sampled of the wafer facing upward;
[0036] Install the wafer partitioning component on the surface to be sampled of the wafer to divide the surface to be sampled into at least two partitions to be sampled;
[0037] Automatically suck the scanning liquid through the sampling component and automatically spray the scanning liquid onto the target partition to be sampled, so that the contaminants on the target partition to be sampled are mixed and / or dissolved in the scanning liquid to form a solution to be sampled;
[0038] Automatically take part or all of the solution to be sampled from the target partition to be sampled through the sampling component.
[0039] In some embodiments of the present application, before automatically sucking the scanning liquid through the sampling component, the wafer surface sampling method further includes:
[0040] Clean the liquid channel in the sampling component with the scanning liquid.
[0041] In some embodiments of the present application, the types of the scanning liquid include one of ultrapure water, acidic solution, oxidizing solution, and organic solvent;
[0042] Wherein, when the scanning liquid is ultrapure water, the solution to be sampled is a sample solution composed of ultrapure water and water-soluble ions;
[0043] When the scanning liquid is an acidic solution or an oxidizing solution, the solution to be sampled is a sample solution composed of an acidic solution and metal ions;
[0044] When the scanning liquid is an organic solvent, the solution to be sampled is a sample solution composed of an organic solution and organic contaminants.
[0045] The wafer surface sample preparation device provided by the present invention and the wafer surface sampling method based on it cover the wafer's surface to be sampled with a wafer partitioning component, so as to divide the surface to be sampled into at least two partitions to be sampled; and use a sampling component to automatically suck the scanning liquid and automatically spray the scanning liquid onto the partitions to be sampled, so that the contaminants on the partitions to be sampled are mixed and / or dissolved in the scanning liquid to form a solution to be sampled; and the sampling component is also used to automatically take part or all of the solution to be sampled from the partitions to be sampled. This application does not require manual operation, avoiding or reducing the risk of contamination. And there is no need to immerse the entire surface of the wafer, avoiding the large dilution of ions on the wafer surface. Only spray the scanning liquid onto the target partition to be sampled, so that the contaminants on the target partition to be sampled are dissolved and / or mixed in the scanning liquid to form a solution to be sampled, which not only takes into account the difference in ion dissolution, but also can improve the detection limit, so that the sensitivity of the sampling method is relatively high, facilitating the discovery of local contamination on the wafer and thus discovering local process abnormalities. BRIEF DESCRIPTION OF THE DRAWINGS
[0046] The following drawings of the present invention are used as a part of the present invention to understand the present invention. The embodiments of the present invention shown in the drawings and their descriptions are used to explain the principles of the present invention.
[0047] In the drawings:
[0048] Figure 1 Shows a schematic structural diagram of a wafer surface sample preparation device according to a specific embodiment of the present invention when the transfer door is in an open state;
[0049] Figure 2 Shows a top view schematic diagram of a wafer partitioning component and a moving bracket according to a specific embodiment of the present invention;
[0050] Figure 3 Shows a top view schematic diagram of a wafer partitioning component according to another specific embodiment of the present invention;
[0051] Figure 4 Shows a schematic structural diagram of a wafer surface sample preparation device according to a specific embodiment of the present invention when the transfer door is in a closed state;
[0052] Figure 5 Shows a flowchart of a wafer surface sampling method according to a specific embodiment of the present invention.
[0053] Reference numerals:
[0054] 10 - Wafer placement component 11 - Wafer
[0055] 20 - Wafer partitioning component 21 - Main body
[0056] 211 - First annular part 212 - Second annular part
[0057] 213 - Connection part 22 - Sealing gasket
[0058] 23 - Mounting and fixing part 31 - Scanning liquid container
[0059] 32 - Temperature control device 40 - Sample collection tank
[0060] 51 - Syringe 52 - Nozzle
[0061] 53 - Connecting pipe 60 - Moving support
[0062] 61 - X - axis moving arm 62 - Y - axis moving arm
[0063] 63 - Z - axis moving arm 71 - Sampling chamber
[0064] 72 - Housing 73 - Protection gas nozzle
[0065] 74 - Waste discharge port 81 - Transfer door
[0066] 82 - Guide rail Detailed implementation manners
[0067] In the following description, numerous specific details are given to provide a more thorough understanding of the present invention. However, it will be apparent to one of ordinary skill in the art that the present invention may be practiced without one or more of these details. In other instances, well - known features of the art are not described to avoid obscuring the present invention.
[0068] It should be understood that the present invention can be implemented in different forms and should not be construed as limited to the embodiments presented herein. On the contrary, these embodiments are provided to make the disclosure thorough and complete, and to fully convey the scope of the present invention to those skilled in the art. In the drawings, the dimensions and relative dimensions of layers and regions may be exaggerated for clarity. Like reference numerals refer to like elements throughout.
[0069] It should be understood that when an element or layer is referred to as being "on, adjacent to, connected to or coupled to other elements or layers, it may be directly on, adjacent to, connected to or coupled to other elements or layers, or there may be intervening elements or layers. In contrast, when an element is referred to as being "directly on, directly adjacent to, directly connected to or directly coupled to other elements or layers, there may be no intervening elements or layers. It should be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present invention, the first element, component, region, layer or part discussed below may be represented as a second element, component, region, layer or part.
[0070] Spatially relative terms such as "under," "below," "below," "under," "above," "above," etc., may be used herein for ease of description to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that in addition to the orientations shown in the figures, the spatially relative terms are intended to include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is flipped, then the elements or features described as "under other elements" or "under" or "under" will be oriented as "on" the other elements or features. Therefore, the exemplary terms "under" and "under" may include both upper and lower orientations. The device may be oriented otherwise (rotated 90 degrees or other orientations) and the spatial descriptors used herein are interpreted accordingly.
[0071] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be limiting of the present invention. When used herein, the singular forms "one", "an" and "said / the" are also intended to include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "consisting of" and / or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.
[0072] Embodiment 1
[0073] refer to Figure 1 , Figure 2 and Figure 3 The embodiment of the present invention provides a wafer surface sample preparation device, which mainly includes:
[0074] A wafer placement component 10 for placing and fixing a wafer 11 of a surface sample to be prepared;
[0075] A wafer partitioning component 20 is covered on the surface to be sampled of the wafer 11 to partition the surface to be sampled into at least two sub - surfaces to be sampled; and,
[0076] A sampling assembly for automatically sucking a scanning liquid and automatically spraying the scanning liquid onto the sub - surfaces to be sampled, so that pollutants on the sub - surfaces to be sampled are mixed and / or dissolved in the scanning liquid to form a solution to be sampled; and for automatically taking part or all of the solution to be sampled from the sub - surfaces to be sampled.
[0077] The specific technical effects and principles are as follows: As described in the background art part of this application, there is a problem that it is impossible to distinguish the pollution of cations, anions and organic substances in specific areas under the existing conventional whole - surface testing conditions of the wafer surface. At the same time, due to the large amount of extraction liquid used in immersion sampling and spraying sampling, the test sensitivity is greatly reduced, restricting the effectiveness of the wafer surface pollutant test.
[0078] In this application, the wafer partitioning component 20 is covered on the surface to be sampled of the wafer 11 to partition the surface to be sampled into at least two sub - surfaces to be sampled; and the sampling assembly is used to automatically suck the scanning liquid and automatically spray the scanning liquid onto the sub - surfaces to be sampled, so that pollutants on the sub - surfaces to be sampled are mixed and / or dissolved in the scanning liquid to form a solution to be sampled; and the sampling assembly is also used to automatically take part or all of the solution to be sampled from the sub - surfaces to be sampled. Compared with the prior art, this application does not require manual operation, avoiding or reducing the pollution risk.
[0079] Moreover, in this application, only the target sub - surface to be sampled needs to be sprayed with the scanning liquid, so that soluble pollutants on the target sub - surface to be sampled are dissolved in the scanning liquid to form a solution to be sampled, and insoluble pollutants are also mixed in the scanning liquid to form a solution to be sampled. This not only takes into account the difference in ion solubility. And because there is no need to immerse the whole surface of the wafer 11, it avoids the large - scale dilution of ions on the surface of the wafer 11, and can also improve the detection limit, so that the sensitivity of the sampling method is relatively high, facilitating the discovery of local pollution on the wafer 11, and thus discovering local process anomalies.
[0080] Specifically, compared with the prior art, in the present application, through the wafer partitioning component 20, specific regions of the wafer 11 can be subdivided as target regions to be sampled, so as to sample specific regions, which is beneficial to accurately identify abnormal points and more accurately reflect problems in specific regions of the wafer 11. Moreover, different scanning liquids can be selected for different regions to be sampled, so that multiple scanning liquids can be selected for the same wafer 11, and different types of pollutants can be flexibly tested. That is, by using multiple regions to be sampled for surface partitioning tests of the wafer 11, the test regions and types of scanning liquids can be flexibly selected, greatly improving the means of identifying abnormalities in special processes and more accurately finding abnormal points. Moreover, sample collection and analysis of ion contamination in specific regions on the surface of the wafer 11 can be realized, data comparison of different regions on the same wafer 11 can be realized, and abnormalities in the process can be more targeted reflected.
[0081] Furthermore, in the present application, since the volume space of the regions to be sampled is small and different regions to be sampled do not interfere with each other, a small volume of scanning liquid can be sprayed on the target region to be sampled, achieving better detection limits and extraction efficiencies.
[0082] The wafer surface sample preparation device shown above will be introduced in detail below with reference to the accompanying drawings.
[0083] When setting the wafer placement component 10, it can adopt any type of support structure such as, but not limited to, a stage, a support frame, etc., which has the function of placing and fixing the wafer 11 of the surface sample to be prepared.
[0084] When setting the wafer partitioning component 20, it is used to cover the surface to be sampled of the wafer 11 to divide the surface to be sampled into at least two regions to be sampled. Exemplarily, when the wafer partitioning component 20 covers the surface to be sampled of the wafer 11, the number of regions to be sampled divided from the surface to be sampled can be any value not less than 2, such as 2, 3, 4, 6, 8, 9, etc. Exemplarily, referring to Figure 2 , when the wafer partitioning component 20 covers the surface to be sampled of the wafer 11, the number of regions to be sampled divided from the surface to be sampled is 9, which are the regions represented by 1-9 in Figure 2 . Referring to Figure 3 , when the wafer partitioning component 20 covers the surface to be sampled of the wafer 11, the number of regions to be sampled divided from the surface to be sampled is 3, which are the regions represented by 1-3 in Figure 3 .
[0085] Regarding the setting method of the wafer partitioning component 20, multiple methods can be adopted, and some methods are introduced below by way of example.
[0086] Exemplarily, referring to Figure 3, the wafer partitioning component 20 may include: a main body 21, and a gasket 22 disposed on one side of the main body 21 facing the surface to be sampled. One side of the gasket 22 is in contact connection with the wafer 11, and the other side is in contact connection with the main body 21; the main body 21 is adapted to the outer shape size of the wafer 11, and the projection of the gasket 22 on the wafer 11 coincides with the projection of the main body 21 on the wafer 11.
[0087] Specifically, the wafer partitioning component 20 includes a composite structure formed by laminating the main body 21 and the gasket 22 up and down. When the wafer partitioning component 20 is covered on the wafer 11, the gasket 22 is interposed between the main body 21 and the wafer 11. The upper side of the gasket 22 is in sealing contact connection with the lower surface of the main body 21, and the lower side of the gasket 22 is in sealing contact connection with the surface of the wafer 11. Thus, the sampled areas partitioned by the wafer partitioning component 20 do not interfere with each other. And the main body 21 is adapted to the outer shape size of the wafer 11, that is, the outer edge size of the main body 21 is less than or equal to the outer shape size of the wafer 11. Thus, when the wafer partitioning component 20 is covered on the wafer 11, it can be ensured that the bottom of each sampled area is the surface of the wafer 11, so that the situation where the size of the main body 21 is too large and the outer shape size of the wafer 11 is too small, resulting in incompatibility between the two, will not occur.
[0088] By providing the gasket 22 on one side of the main body 21 facing the surface to be sampled, when the wafer partitioning component 20 is covered on the wafer 11, the gasket 22 on the wafer partitioning component 20 can be in sealing contact connection with the wafer 11, avoiding the scanning liquid in one sampled area from leaking into the adjacent sampled area through the gap between the wafer partitioning component 20 and the wafer 11, and preventing the solutions in different sampled areas from diffusing to each other.
[0089] It should be noted that the materials of the main body 21 and the gasket 22 can be prepared from any type of material. In some preferred embodiments, the materials of the main body 21 and the gasket 22 can be adjusted according to the type of the scanning liquid to improve the anti-corrosion performance of the main body 21 and the gasket 22, that is, the materials of the main body 21 and the gasket 22 can be selected with the optimal performance. For example, in order to ensure that the materials of the main body 21 and the gasket 22 will not interfere with the test and will not be corroded by mixed acid (with oxidizing property) or organic solvent, it is required that their various properties meet the requirements. After investigating common plastic and rubber materials, the materials of the main body 21 and the gasket 22 suitable for different scanning liquids are obtained. The investigation table for the material of the main body 21 can refer to Table 1 below, and the investigation table for the material of the gasket 22 can refer to Table 2 below.
[0090] Table 1 - Investigation Table for the Material of the Main Body 21
[0091]
[0092]
[0093] Table 2 - Investigation Form for the Material of Gasket 22
[0094]
[0095]
[0096] Of course, it should be noted that the above materials are selected for typical tests, and this application does not exclude the use of combinations of multiple composite materials.
[0097] The following exemplarily introduces some material selection methods among the scanning liquid, the main body 21, and the gasket 22.
[0098] Exemplarily, when the scanning liquid is ultrapure water, the material of the main body 21 includes one of polycarbonate (PC), polyetheretherketone (PEEK), and polystyrene (PS). For ultrapure water, polycarbonate, polyetheretherketone, and polystyrene will not introduce other pollutants and have the advantage of strong anti - corrosion characteristics. At this time, the material of the gasket 22 includes one of styrene - butadiene rubber, butyl rubber, nitrile rubber, and silicone rubber. For ultrapure water, styrene - butadiene rubber, butyl rubber, nitrile rubber, and silicone rubber will also not introduce other pollutants and have the advantage of strong anti - corrosion characteristics. At the same time, it is also beneficial for these materials to have excellent sealing characteristics, improving the sealing performance when the gasket 22 seals and connects the main body 21 and the surface of the wafer 11.
[0099] Exemplarily, when the scanning liquid is an acidic solution and / or an oxidizing solution, that is, the scanning liquid is a mixed acid, which has both acidity and oxidizing properties. For example, it can be such as but not limited to HF + H2O2 / HNO3. At this time, the material of the main body 21 includes polytetrafluoroethylene (PTFE) or polyetheretherketone (PEEK). For acidic solutions and oxidizing solutions, polytetrafluoroethylene and polyetheretherketone have the advantage of strong anti - corrosion characteristics, improving the anti - corrosion performance of the main body 21. At this time, the material of the gasket 22 includes one of ethylene - propylene rubber, fluororubber, and perfluoro rubber. For acidic solutions and oxidizing solutions, ethylene - propylene rubber, fluororubber, and perfluoro rubber have the advantage of strong anti - corrosion characteristics, improving the anti - corrosion performance of the gasket 22. At the same time, it is also beneficial for these materials to have excellent sealing characteristics, improving the sealing performance when the gasket 22 seals and connects the main body 21 and the surface of the wafer 11.
[0100] Exemplarily, when the scanning liquid is an organic solvent, for example, the scanning liquid can be an organic solvent such as but not limited to CH2Cl2, acetone, toluene, etc. At this time, the material of the main body 21 includes polytetrafluoroethylene (PTFE). Polytetrafluoroethylene has good organic solvent resistance for organic solvents. At this time, the material of the gasket 22 includes perfluororubber, which also has good organic solvent resistance for organic solvents. At the same time, it is also beneficial for these materials to have excellent sealing characteristics, improving the sealing performance when the gasket 22 seals and connects the main body 21 and the surface of the wafer 11.
[0101] Exemplarily, before using the wafer partitioning component 20, the wafer partitioning component 20 can be soaked and cleaned, and its background can be tested to avoid interference with the sample.
[0102] Regarding the structural shape of the main body 21 of the wafer partitioning component 20, various shapes can be adopted. As long as it can divide the surface of the wafer 11 into multiple sampling zones, it is within the protection scope of the embodiments of the present application. The following exemplarily introduces some structural shapes of the main body 21.
[0103] Exemplarily, the main body 21 of the wafer partitioning component 20 can include: a first annular portion 211, and a second annular portion 212 that surrounds the first annular portion 211 and is concentrically arranged with a gap from the first annular portion 211. Among them, the outer diameter of the second annular portion 212 is equal to the diameter of the wafer 11, so that the main body 21 is adapted to the outer dimension of the wafer 11. And the main body 21 of the wafer partitioning component 20 can also include: at least two connecting portions 213 connected between the first annular portion 211 and the second annular portion 212. Each connecting portion 213 has an opposite first end and second end. The first end of the connecting portion 213 is connected to the first annular portion 211, and the second end of the connecting portion 213 is connected to the second annular portion 212, so that together with the connecting portion 213, the first annular portion 211 and the second annular portion 212, a circular zone and at least two fan-shaped annular zones are separated from the sampling surface.
[0104] Specifically, the main body 21 includes a second annular portion 212 with a larger size, and the outer diameter of the second annular portion 212 is exactly equal to the diameter of the wafer 11. Thus, when the main body 21 is placed on the surface of the wafer 11, the outer edge of the second annular portion 212 is exactly aligned with the edge of the wafer 11. And the main body 21 also includes a first annular portion 211 with a smaller size. The first annular portion 211 is concentrically arranged with the second annular portion 212 and is surrounded by the second annular portion 212 with a gap, so that the first annular portion 211 and the surface of the wafer 11 enclose a circular sampling zone, which is the above-mentioned circular zone.
[0105] Moreover, the first annular portion 211 and the second annular portion 212 are connected by at least two connecting portions 213 to connect the first annular portion 211 and the second annular portion 212 into a whole. Regarding the number of the connecting portions 213, it can be any number such as 2, 3, 5, 6, 8, etc. Regarding the arrangement of the connecting portions 213, at least two connecting portions 213 can be evenly arranged at equal intervals around the circumference of the first annular portion 211, so that the central angles of the formed fan-shaped partition areas are the same. Of course, at least two connecting portions 213 can be evenly arranged at unequal intervals around the circumference of the first annular portion 211.
[0106] Exemplarily, referring to Figure 3 , the number of the connecting portions 213 is 2, and the two connecting portions 213 are evenly arranged at equal intervals along the circumference of the first annular portion 211, so as to form two fan-shaped partition areas with central angles of 180° each. The two fan-shaped partition areas are respectively Figure 3 the areas where 1 and 2 are located in Figure 3 . The area where 3 is located in Figure 3 is a circular partition area. Exemplarily, referring to Figure 3 , the area of the circular partition area located in the center can be 78.5 cm 2 , and the areas of the two fan-shaped partition areas can both be 278.2 cm 2 , which can achieve full coverage of the edge and the center of the wafer 11, and can achieve the comparison of ion contamination at the edge and the center.
[0107] Exemplarily, referring to Figure 2 , the number of the connecting portions 213 is 8, and the eight connecting portions 213 are evenly arranged at equal intervals along the circumference of the first annular portion 211, so as to form eight fan-shaped partition areas with central angles of 45° each. The eight fan-shaped partition areas are respectively Figure 2 the areas where 1 - 8 are located in Figure 2 . The area where 9 is located in Figure 2 is a circular partition area.
[0108] It should be understood that the above only exemplarily introduces the shapes and numbers of the sampling areas separated by the wafer partitioning component 20. In addition, the wafer partitioning component 20 can also adopt other ways that can separate at least two sampling areas on the surface of the wafer 11.
[0109] Exemplarily, the wafer partitioning component 20 may further include: a mounting and fixing member 23, which is disposed on the second annular portion 212. The mounting and fixing member 23 is configured such that when the mounting and fixing member 23 is in the first working mode, the main body 21 and the gasket 22 can be adjusted in position on the wafer 11; when the mounting and fixing member 23 is in the second working mode, the positions of the main body 21 and the gasket 22 on the wafer 11 cannot be adjusted, that is, the wafer partitioning component 20 is installed. By providing the mounting and fixing member 23 and configuring it into two modes, namely the first working mode and the second working mode, in the first working mode, the main body 21 and the gasket 22 can be adjusted in position on the wafer 11, so that the staff can determine the position of each sampling partition on the surface of the wafer 11, thereby facilitating the target position on the wafer 11 to be located on the target sampling partition, and subsequent sampling and analysis of the target position on the wafer 11 can be carried out. When the mounting and fixing member 23 is in the second working mode, the positions of the main body 21 and the gasket 22 on the wafer 11 cannot be adjusted, that is, the wafer partitioning component 20 is installed. At this time, the main body 21 and the gasket 22 are locked on the surface of the wafer 11, which facilitates the sealed connection between the gasket 22 and the surface of the wafer 11, and also prevents the main body 21 and the gasket 22 from shaking during the subsequent sampling process, thereby affecting normal sampling.
[0110] Exemplarily, the wafer partitioning component 20 may include a handle disposed outside the second annular portion 212, so as to facilitate the staff to place the wafer partitioning component 20 on the wafer 11 by holding the handle.
[0111] Regarding the setting manner of the mounting and fixing member 23, it can adopt various ways, and some ways are introduced as follows by way of example.
[0112] Exemplarily, the mounting and fixing member 23 may further include a locking mechanism. When the locking mechanism is in the first working mode, the main body 21 and the gasket 22 can be adjusted in position on the wafer 11; when the locking mechanism is in the second working mode, the positions of the main body 21 and the gasket 22 on the wafer 11 cannot be adjusted, that is, the wafer partitioning component 20 is installed.
[0113] Regarding the implementation manner of the locking mechanism, it can adopt any mechanism that can lock the main body 21 and the gasket 22 on the wafer 11. Exemplarily, the locking mechanism may include structures such as a buckle and a clamping groove.
[0114] When setting up the sampling component, it has the following functions: automatically sucking the scanning liquid, automatically spraying the scanning liquid onto the partition to be sampled, and automatically taking part or all of the solution to be sampled from the partition to be sampled. After spraying the scanning liquid onto the partition to be sampled, it can mix and / or dissolve the pollutants on the partition to be sampled in the scanning liquid to form the solution to be sampled. Specifically, the scanning liquid can not only dissolve the soluble pollutants on the partition to be sampled in the scanning liquid to form the solution to be sampled, but also mix the insoluble pollutants on the partition to be sampled in the scanning liquid to form the solution to be sampled. Thus, compared with the prior art, it can also sample the insoluble pollutants on the partition to be sampled. It should be noted that the pollutants in this application refer to any one of, but not limited to, anions, cations, organic substances, particulate matters, etc., which contaminate the surface of the wafer 11.
[0115] Exemplarily, the sampling component is also used to control the volume of the scanning liquid sprayed onto the partition to be sampled, so that the thickness of the liquid film formed on the partition to be sampled does not exceed the height of the wafer partitioning component 20 in the direction perpendicular to the surface to be sampled, thereby avoiding the scanning liquid in the partition to be sampled from overflowing the partition to be sampled and thus contaminating other partitions to be sampled.
[0116] Exemplarily, the height of the wafer partitioning component 20 in the direction perpendicular to the surface to be sampled can be adjusted according to the actual required sampling amount.
[0117] Regarding the implementation manner of the sampling component, it can adopt various ways, and some ways are introduced exemplarily as follows.
[0118] Exemplarily, referring to Figure 1 , the sampling component may include: a syringe 51 and a nozzle 52 connected to the syringe 51 through a connecting tube 53. Among them, the syringe 51 is used to control the nozzle 52 to perform sucking or discharging operations, and is also used to collect the liquid overflowing from the nozzle 52. The nozzle 52 is used to suck or discharge the scanning liquid and is also used to suck or discharge the solution to be sampled. The sampling component may further include a moving bracket 60, and the nozzle 52 is arranged on the moving bracket 60. The moving bracket 60 is used to drive the nozzle 52 to perform translational movement along the X-axis, Y-axis or Z-axis, so that the nozzle 52 reaches the target position to perform sucking or discharging operations.
[0119] By adopting the sampling component composed of the syringe 51, the connecting tube 53 and the nozzle 52, not only the structure of the sampling component is simplified, but also it is convenient to clean the liquid channels in the sampling component. For example, before automatically sucking the scanning liquid through the sampling component, the liquid channels in the sampling component can be cleaned with the scanning liquid, so that the same sampling component can be applied to the extraction and spraying of various different scanning liquids and solutions to be sampled, and does not affect the ion detection results. Moreover, it can also realize the integration of sample preparation, sample transfer and device cleaning, and has a better anti-pollution effect.
[0120] In addition, in this embodiment, the movable bracket 60 is used in cooperation with the nozzle 52, the wafer partitioning component 20 and the syringe 51 to perform closed sampling, effectively preventing contamination. At the same time, the volume of the scanning liquid can be flexibly set (for example, any value between 1 - 50 ml), ensuring the concentration ratio of the extraction liquid and a better method detection limit. For example, sampling can be performed on each sampling area to be sampled through the sampling syringe 51 and the nozzle 52, and regional samples (solutions to be sampled) of a single sampling area to be sampled or multiple sampling areas to be sampled can be obtained. Specifically, the same scanning liquid can be used to scan a single sampling area to be sampled or multiple sampling areas to be sampled as the solution to be sampled for further testing by other analysis machines. Moreover, the amount of the scanning liquid per time can be flexibly adjusted between 1 - 50 ml, and the extraction time and number of times can be freely set, avoiding contamination caused by manual operation and obtaining an excellent detection limit at the same time.
[0121] In a preferred embodiment, for the sampling component, it can be cleaned with the scanning liquid before or after sampling and its background value can be tested, and the background value can be considered in subsequent analysis, thereby improving the accuracy of sampling and analysis.
[0122] Exemplarily, referring to Figure 1 , a part of the connecting pipe 53 can include a spiral pipe (also known as a "Loop ring") formed by a spiral winding method, thus facilitating the storage of the connecting pipe 53.
[0123] It should be understood that only one structure of the sampling component is introduced above by way of example. In addition, other structures can also be adopted.
[0124] Regarding the setting method of the movable bracket 60, various methods can be adopted. Exemplarily, referring to Figure 2 , the movable bracket 60 can include an X-axis moving arm 61, a Y-axis moving arm 62 and a Z-axis moving arm 63. The X-axis and Y-axis therein can be two mutually perpendicular directions parallel to the surface of the wafer 11, and the Z-axis therein can be a direction perpendicular to the surface of the wafer 11. The nozzle 52 is arranged on the movable bracket 60, so that the nozzle 52 can be driven by the X-axis moving arm 61, the Y-axis moving arm 62 and the Z-axis moving arm 63 to move, thereby realizing the movable bracket 60 driving the nozzle 52 to move along the X-axis or Y-axis or Z-axis, and enabling the nozzle 52 to reach the target position for sucking or discharging operations.
[0125] Regarding the implementation method of the three axial moving arms driving the nozzle 52 to move in three axial directions, various methods can be adopted. The following exemplarily introduces a specific implementation method.
[0126] Exemplarily, taking Figure 2For example, the X-axis moving arm 61 and the Z-axis moving arm 63 can be located on one side of the wafer 11. The X-axis moving arm 61 is arranged parallel to the surface of the wafer 11, the Z-axis moving arm 63 is arranged perpendicular to the surface of the wafer 11, and the Y-axis moving arm 62 is located above the surface of the wafer 11 and arranged parallel to the surface of the wafer 11. The nozzle 52 is slidably assembled on the Y-axis moving arm 62, enabling the nozzle 52 to slide along the Y-axis moving arm 62 to above different sampling partitions arranged in the Y-axis direction. The Y-axis moving arm 62 is slidably assembled on the Z-axis moving arm 63 to be able to slide along the Z-axis moving arm 63, thereby driving the nozzle 52 to move in the Z-axis direction, bringing the nozzle 52 closer to or farther from the surface of the wafer 11. The Z-axis moving arm 63 is slidably assembled on the X-axis moving arm to achieve the sliding of the Z-axis moving arm 63 relative to the X-axis moving arm 61 in the X-axis direction, so that the nozzle 52 can slide along the X-axis moving arm 61 to above different sampling partitions arranged in the X-axis direction.
[0127] The above driving methods for controlling the movement of the nozzle 52 in the X-axis, Y-axis, and Z-axis directions can be achieved by means such as but not limited to linear motors, rack and pinion transmission mechanisms, etc. The current position of the nozzle 52 can be detected in real time and it can be determined whether the nozzle 52 has moved to the desired position by means such as but not limited to position ranging sensors, image sensors, linear motor pulse quantities, etc.
[0128] Exemplarily, the wafer surface sample preparation device may further include: at least one scanning liquid container 31 and a temperature control device 32. Each scanning liquid container 31 is used to store a kind of scanning liquid, and the temperature control device 32 is used to adjust the temperature of the scanning liquid in the scanning liquid container 31. During the sampling process, the temperature of the scanning liquid in the scanning liquid container 31 can be adjusted by the temperature control device 32 to be within the temperature range where the solubility of the target ions is good or best. Thus, after the sampling assembly sucks the scanning liquid from the scanning liquid container 31 and sprays the scanning liquid onto the sampling partition, the soluble contaminants on the sampling partition can dissolve in the scanning liquid at a faster dissolution rate to form a solution to be sampled. Moreover, for insoluble contaminants, by controlling the temperature of the scanning liquid sprayed onto the sampling partition to be within an appropriate temperature range, they can be mixed with the scanning liquid faster to form a solution to be sampled. Therefore, considering the solubility difference of the scanning liquid temperature for the contaminants on the surface of the wafer 11, the temperature control device 32 is used to increase the rate of contaminant dissolution and mixing and / or dissolution in the scanning liquid to form a solution to be sampled.
[0129] In addition, by introducing a mode where the type of scanning liquid can be selected, it can be extended to the component analysis of cations, anions, and organic substances. In some embodiments, the temperature of the scanning liquid can also be controlled to be constant (for example, any value between 0 - 50 °C can be selected for the temperature of the scanning liquid). According to the dissolution characteristics of characteristic substances, a favorable scanning liquid and the optimal scanning liquid temperature can be selected, ensuring the accuracy of sample preparation and extraction efficiency, and ensuring the efficient preparation of ultra-low trace pollutants in semiconductors.
[0130] For example, the temperature of the scanning liquid can be adjusted to be constant between 0 - 50 °C, which can ensure the best extraction efficiency for ions with different properties, and the test results are more accurate. At the same time, the scanning liquid can be flexibly replaced with ultrapure water, formulated acid solution, and organic solvents for specific component capture, greatly improving the ion detection ability on the surface of the wafer 11.
[0131] For example, the scanning liquid of the aforementioned single sampling partition can be controlled at any value between 1 - 50 ml, and at the same time, temperature control is carried out. For volatile gas ions or organic substances, the temperature of the scanning liquid is controlled at a low temperature for low-temperature extraction sampling. For metal ions, the temperature of the scanning liquid can be controlled at a high temperature to increase the dissolution rate and reduce sampling loss. At the same time, the single scanning liquid can be for a single sampling partition or multiple sampling partitions, and different scanning liquids can be selected to obtain a higher concentration ratio, greatly improving the test sensitivity and better reflecting the differences.
[0132] It should be noted that the number of scanning liquid containers 31 can specifically be any number such as 1, 2, 3, etc., which is related to the specific sampling and analysis strategy.
[0133] Exemplarily, the wafer surface sample preparation device may further include: at least one sample collection tank 40, and the sample collection tank 40 is used to store part or all of the solution to be sampled automatically taken by the sampling component from the sampling partition. The sampling component is also used to discharge part or all of the solution to be sampled taken from the sampling partition into the sample collection tank 40. By setting the sample collection tank 40, it is convenient for the sampling component to automatically take part or all of the solution to be sampled from the sampling partition and discharge it into the sample collection tank 40 to complete the collection work of the wafer 11 surface sample.
[0134] It should be noted that the number of sample collection tanks 40 can be any value such as 1, 2, 3, etc. In some embodiments, the number of sample collection tanks 40 can be equal to the number of sampling partitions, that is, one sample collection tank 40 is correspondingly set for each sampling partition to collect the solution to be sampled obtained from the corresponding sampling partition.
[0135] Exemplarily, refer to Figure 1The wafer surface sample preparation device may further include: a housing 72 having a sampling chamber 71, wherein the wafer placement component 10 and the sampling assembly are both accommodated in the sampling chamber 71, and the wafer placement component 10 and the sampling assembly are respectively mounted on the housing 72. Exemplarily, the material of the housing 72 may be made of a low hygroscopic material, thereby improving the cleanliness of the sampling chamber 71 in the housing 72.
[0136] refer to Figure 1 and Figure 4 , a transfer door 81 that can be opened and closed can be provided on the housing 72, and the transfer door 81 is configured as follows: when the transfer door 81 is opened, the wafer 11 is transferred into or out of the sampling chamber 71 through the transfer door 81, and the wafer partitioning component 20 is transferred into or out of the sampling chamber 71 through the transfer door 81; when the transfer door 81 is closed, the sampling chamber 71 is realized as a closed space. Specifically, when the transfer door 81 is opened, the wafer 11 can be manually or automatically transferred in and placed on the wafer placement component 10, and then the wafer partitioning component 20 can be manually placed on the surface of the wafer 11, and then the transfer door 81 is closed to realize that the sampling chamber 71 is a closed space.
[0137] Exemplary, reference Figure 1 and Figure 4 , the portal 81 can be the side facing us, where Figure 1 Portal 81 in the game is open. Figure 4 The transmission door 81 in the embodiment is in a closed state. The transmission door 81 can be switched between the open state and the closed state in a variety of ways. In some embodiments, the following method can be used: Figure 1 and Figure 4 In the guide rail 82 shown, the transfer door 81 is slidably mounted on the guide rail 82 so as to be able to slide along the guide rail 82. When the transfer door 81 slides to a position opposite to the opening of the housing 72, the transfer door 81 is in a closed state; when the transfer door 81 slides to a position offset from the opening of the housing 72, the transfer door 81 is in an open state. In other embodiments, the transfer door 81 may also be rotatably connected to the opening of the housing 72 using a flip mechanism such as, but not limited to, a hinge, so as to switch between an open state and a closed state.
[0138] Exemplarily, a protective gas nozzle 73 is further provided on the first side of the sampling chamber 71 on the housing 72, and the protective gas nozzle 73 is connected to a protective gas supply assembly provided outside the housing 72, and is used to introduce protective gas into the sampling chamber 71, thereby providing a pollution-free space for sampling. Exemplarily, refer to Figure 1, the first side of the housing 72 can be located on the top side of the sampling chamber 71. Exemplarily, the protective gas can be, such as but not limited to, nitrogen, inert gas, etc. During the sampling process, the protective gas maintains continuous purging to protect the sampling chamber 71 and prevent particulate matter in the air from contaminating.
[0139] Exemplarily, a waste outlet 74 is also provided on the second side of the housing 72 that is opposite to the position of the first side of the sampling chamber 71. Thus, the protective gas ejected from the protective gas nozzle 73 passes through structures such as the wafer partitioning member 20, the wafer 11, and the sampling assembly and then discharges from the second side of the housing 72 from the sampling chamber 71, enabling the protective gas to circulate and improving the protection effect. Exemplarily, refer to Figure 1 , the second side of the housing 72 can be located on the bottom side of the sampling chamber 71.
[0140] Embodiment 2
[0141] The embodiment of the present invention also provides a wafer surface sampling method based on any of the above wafer surface sample preparation devices. Refer to Figures 1 - 5 , the wafer surface sampling method mainly includes the following steps:
[0142] In S501, the wafer 11 is placed on the wafer placement member 10 with the surface to be sampled of the wafer 11 facing upward;
[0143] In S502, the wafer partitioning member 20 is installed on the surface to be sampled of the wafer 11 to divide the surface to be sampled into at least two sampling partitions;
[0144] In S503, the sampling assembly automatically sucks the scanning liquid and automatically sprays the scanning liquid onto the target sampling partition so that the contaminants on the target sampling partition are mixed and / or dissolved in the scanning liquid to form a solution to be sampled;
[0145] In S504, the sampling assembly automatically takes part or all of the solution to be sampled from the target sampling partition.
[0146] The following will introduce in detail the above wafer surface sampling method based on any of the above wafer surface sample preparation devices with reference to the accompanying drawings.
[0147] First, refer to Figure 1 and Figure 3 , control the transfer gate to be in the open state, and place the wafer 11 on the wafer placement member 10 with the surface to be sampled of the wafer 11 facing upward. The placement method can be manual or an automatic placement method such as a robotic arm.
[0148] Next, refer to Figure 1 and Figure 5, install the wafer partitioning component 20 on the surface of the wafer 11 to be sampled, so as to divide the surface to be sampled into at least two partitions to be sampled. Combining with the foregoing Embodiment 1, the installation fixing member 23 can be configured in the first working mode first to adjust the positions of the main body 21 and the gasket 22 on the wafer 11. After the positions are adjusted, the installation fixing member 23 is configured in the second working mode to lock the main body 21 and the gasket 22 on the wafer 11 to complete the installation of the wafer partitioning component 20.
[0149] Next, the sampling assembly automatically sucks the scanning liquid and automatically sprays the scanning liquid onto the target partition to be sampled, so that the pollutants on the target partition to be sampled are mixed and / or dissolved in the scanning liquid to form a solution to be sampled. Specifically, one or more partitions to be sampled can be selected from multiple partitions to be sampled as the target partition to be sampled, and then the sampling assembly automatically sucks the scanning liquid and sprays the scanning liquid onto the target partition to be sampled, so that the pollutants on the target partition to be sampled are mixed and / or dissolved in the scanning liquid to form a solution to be sampled.
[0150] The type of the scanning liquid is related to the type of the sample solution of the solution to be sampled. Some examples are introduced as follows by way of example.
[0151] Exemplarily, the types of the scanning liquid include one of ultrapure water, acidic solution, oxidizing solution, and organic solvent.
[0152] Among them, when the scanning liquid is ultrapure water, the solution to be sampled is a sample solution composed of ultrapure water and water-soluble ions.
[0153] When the scanning liquid is an acidic solution or an oxidizing solution, the solution to be sampled is a sample solution composed of an acidic solution and metal ions.
[0154] When the scanning liquid is an organic solvent, the solution to be sampled is a sample solution composed of an organic solution and organic pollutants.
[0155] By flexibly selecting a variety of scanning liquids (ultrapure water / acidic solution / oxidizing solution / organic solvent), a wide range of tests can be carried out for a variety of test ions / organic substances, and the application range is wider.
[0156] In a preferred embodiment, before the sampling assembly automatically sucks the scanning liquid, the wafer surface sampling method may further include: cleaning the liquid channel in the sampling assembly with the scanning liquid.
[0157] Next, the sampling assembly automatically takes part or all of the solution to be sampled from the target partition to be sampled. Exemplarily, referring to Figure 1 , part or all of the solution to be sampled taken from the target partition to be sampled can be discharged into the corresponding sample collection tank 40 through the sampling assembly.
[0158] In a preferred embodiment, before automatically taking part or all of the solution to be sampled from the target partition to be sampled by the sampling component, the liquid channel in the sampling component can be cleaned with a scanning liquid and the liquid channel in the sampling component can be dried to prevent contamination or dilution of the solution to be sampled taken from the target partition to be sampled.
[0159] The present invention has been described by the above embodiments, but it should be understood that the above embodiments are only for illustrative and explanatory purposes, and are not intended to limit the present invention to the scope of the described embodiments. In addition, those skilled in the art can understand that the present invention is not limited to the above embodiments, and more variations and modifications can be made according to the teachings of the present invention, and these variations and modifications all fall within the scope claimed by the present invention. The protection scope of the present invention is defined by the appended claims and their equivalent scope.
Claims
1. A wafer surface sample preparation device, characterized in that, Comprising: A wafer placement component for placing and fixing a wafer of a surface sample to be prepared; A wafer partitioning component covering the surface to be sampled of the wafer to partition the surface to be sampled into at least two partitions to be sampled; A sampling assembly for automatically sucking a scanning liquid and automatically spraying the scanning liquid onto the partitions to be sampled, so that contaminants on the partitions to be sampled are mixed and / or dissolved in the scanning liquid to form a solution to be sampled; and for automatically taking part or all of the solution to be sampled from the partitions to be sampled.
2. The wafer surface sample preparation device according to claim 1, characterized in that, Further comprising: At least one scanning liquid container, each of the scanning liquid containers being used for storing one kind of the scanning liquid; A temperature control device for adjusting the temperature of the scanning liquid in the scanning liquid container.
3. The wafer surface sample preparation device according to claim 1, characterized in that, Further comprising: At least one sample collection tank for storing part or all of the solution to be sampled automatically taken by the sampling assembly from the partitions to be sampled; the sampling assembly is further used for discharging part or all of the solution to be sampled taken from the partitions to be sampled into the sample collection tank.
4. The wafer surface sample preparation device according to claim 1, wherein The sampling assembly comprises: A syringe and a nozzle connected to the syringe through a connecting tube; the syringe is used for controlling the nozzle to perform sucking or discharging operations and for collecting the liquid overflowing from the nozzle; the nozzle is used for sucking or discharging the scanning liquid and for sucking or discharging the solution to be sampled; A moving bracket, the nozzle being arranged on the moving bracket, and the moving bracket being used for driving the nozzle to perform translational movement along the X-axis, Y-axis or Z-axis, so that the nozzle reaches a target position to perform sucking or discharging operations.
5. The wafer surface sample preparation device according to claim 1, characterized in that The sampling assembly is further used for controlling the volume of the scanning liquid sprayed onto the partitions to be sampled, so that the thickness of the liquid film formed on the partitions to be sampled does not exceed the height of the wafer partitioning component in the direction perpendicular to the surface to be sampled.
6. The wafer surface sample preparation device according to claim 1, wherein, The wafer partitioning component comprises: A main body and a sealing gasket arranged on one side of the main body facing the surface to be sampled, one side of the sealing gasket being in contact connection with the wafer, and the other side being in contact connection with the main body; the main body is adapted to the outer shape size of the wafer, and the projection of the sealing gasket on the wafer coincides with the projection of the main body on the wafer.
7. The wafer surface sample preparation device according to claim 6, characterized in that The main body comprises: A first annular part; A second annular part concentrically arranged around the first annular part and spaced from the first annular part, the outer diameter of the second annular part being equal to the diameter of the wafer; and At least two connecting parts connected between the first annular part and the second annular part, each of the connecting parts having opposite first ends and second ends, the first ends of the connecting parts being connected to the first annular part, and the second ends of the connecting parts being connected to the second annular part, so that the connecting parts, the first annular part and the second annular part together partition the surface to be sampled into a circular partition and at least two fan-shaped partitions.
8. The wafer surface sample preparation device according to claim 7, characterized in that, The wafer partitioning component further comprises: An installation fixture is provided on the second annular portion and configured such that when the installation fixture is in the first working mode, the main body and the gasket can be adjusted in position on the wafer; when the installation fixture is in the second working mode, the positions of the main body and the gasket on the wafer cannot be adjusted, that is, the wafer partitioning component is installed.
9. The wafer surface sample preparation device according to claim 7, wherein When the scanning liquid is ultrapure water, the material of the main body includes one of polycarbonate, polyether ether ketone, and polystyrene, and the material of the gasket includes one of styrene-butadiene rubber, butyl rubber, nitrile rubber, and silicone rubber; and / or, When the scanning liquid is an acidic solution and / or an oxidizing solution, the material of the main body includes polytetrafluoroethylene or polyether ether ketone, and the material of the gasket includes one of ethylene-propylene rubber, fluororubber, and perfluororubber; and / or, When the scanning liquid is an organic solvent, the material of the main body includes polytetrafluoroethylene, and the material of the gasket includes perfluororubber.
10. The wafer surface sample preparation device according to claim 1, characterized in that, It further includes: A housing having a sampling chamber, wherein the wafer placement component and the sampling assembly are both accommodated in the sampling chamber, and the wafer placement component and the sampling assembly are respectively installed on the housing; A protective gas nozzle is provided on the housing and located on the first side of the sampling chamber. The protective gas nozzle is in communication with a protective gas supply assembly provided outside the housing for introducing protective gas into the sampling chamber; A waste outlet is provided on the housing and located on the second side opposite to the first side position of the sampling chamber; An openable and closable transfer door is provided on the housing and configured such that when the transfer door is opened, the wafer is introduced into or out of the sampling chamber through the transfer door, and the wafer partitioning component is introduced into or out of the sampling chamber through the transfer door; when the transfer door is closed, the sampling chamber is made into a closed space.
11. A wafer surface sampling method for a wafer surface sample preparation device according to any one of claims 1 to 10, characterized in that, It includes the following steps: Place the wafer on the wafer placement component with the surface to be sampled of the wafer facing upward; Install the wafer partitioning component on the surface to be sampled of the wafer to divide the surface to be sampled into at least two sampling sub-regions; Automatically suck the scanning liquid through the sampling assembly and automatically spray the scanning liquid onto the target sampling sub-region so that the contaminants on the target sampling sub-region are mixed and / or dissolved in the scanning liquid to form a sample solution to be sampled; Automatically take part or all of the sample solution to be sampled from the target sampling sub-region through the sampling assembly.
12. The wafer surface sampling method according to claim 11, wherein Before automatically sucking the scanning liquid through the sampling assembly, it further includes: Clean the liquid channels in the sampling assembly with the scanning liquid.
13. The wafer surface sampling method according to claim 11, wherein, The types of the scanning liquid include one of ultrapure water, acidic solution, oxidizing solution, and organic solvent; Among them, when the scanning liquid is ultrapure water, the sample solution to be sampled is a sample solution composed of ultrapure water and water-soluble ions; When the scanning liquid is an acidic solution or an oxidizing solution, the sample solution to be sampled is a sample solution composed of an acidic solution and metal ions; When the scanning liquid is an organic solvent, the sample solution to be sampled is a sample solution composed of an organic solution and organic contaminants.