Manufacturing method of metal substrate for semiconductor packaging

Abstract

The invention relates to a manufacturing method of a metal substrate for semiconductor packaging, and the method comprises the steps: blanking a rectangular base material which is a rectangular base material with the thickness of D; the rectangular base material is ground to the thickness required by a drawing on a grinding machine; the appearance of the rectangular base material meets the requirement through sand blasting and cleaning; the method comprises the steps that a rectangular base material is linearly cut into a plurality of E-shaped workpieces, the linearly cut E-shaped workpieces are clamped and fixed, metal glue is smeared on the surfaces of the clamped and fixed E-shaped workpieces, and then the transverse rectangular structure parts of the E-shaped workpieces are ground through grinding equipment to obtain a plurality of vertical rectangular base materials; the vertical rectangular base material obtained after grinding is cleaned with acetone, and the vertical rectangular base material is electroplated after cleaning is completed; and detecting the electroplated vertical rectangular base material, and rejecting defective products to obtain the metal substrate for packaging. Existing machining problems can be effectively solved, and the production efficiency and the product quality are improved.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor technology, and particularly relates to a manufacturing method of a metal substrate for semiconductor packaging. Background Art

[0002] Currently, there are many problems in the processing of metal substrates. The process is rough, making it difficult to guarantee the accuracy and the processing efficiency is low. The traditional grinding method is extremely likely to cause deformation of the base material, and the parallelism of the corresponding surfaces is insufficient. Due to the too small size of the metal substrate, the clamping and fixing effect is poor, seriously affecting the subsequent processing accuracy. The cleaning and electroplating processes also cannot meet the increasingly strict product quality requirements. In addition, multiple clamping operations during the processing process, due to interference such as positioning errors, cumulative errors, and human factors, result in a decrease in the dimensional accuracy and positional accuracy of the product, especially more prominent in products with smaller sizes, and urgent improvement is needed. Summary of the Invention

[0003] In order to solve the problems existing in the background art, the present invention provides a manufacturing method of a metal substrate for semiconductor packaging, which is characterized by including:

[0004] S1: Cutting a rectangular base material, and the rectangular base material selected is a rectangular base material with a thickness of D;

[0005] S2: Grinding the rectangular base material on a grinding machine to the thickness required by the drawing;

[0006] S3: Making the appearance of the rectangular base material meet the requirements through sandblasting and cleaning;

[0007] S4: Wire-cutting the rectangular base material into a plurality of E-shaped workpieces. Among them, the E-shaped workpiece includes a horizontal rectangular structure and a plurality of vertical rectangular structures, and the upper surface of each vertical rectangular structure is integrally connected to the lower surface of the horizontal rectangular structure;

[0008] S5: Clamping and fixing the wire-cut E-shaped workpiece, applying metal glue on the surface of the clamped and fixed E-shaped workpiece, and then a grinding device grinds the horizontal rectangular structure part of the E-shaped workpiece to obtain a plurality of vertical rectangular base materials;

[0009] S6: Cleaning the obtained vertical rectangular base material with acetone, and performing electroplating on the vertical rectangular base material after cleaning;

[0010] S7: Detecting the vertical rectangular base material after electroplating, eliminating defective products, and obtaining a metal substrate for packaging.

[0011] The present invention has at least the following beneficial effects

[0012] In view of the existing problems in processing rectangular substrates, the present invention significantly improves the manufacturing level of metal substrates by optimizing the process. The thickness is precisely controlled by grinding with a grinding machine to avoid substrate deformation caused by traditional grinding and ensure processing accuracy. Sandblasting and cleaning effectively improve the appearance quality and lay a solid foundation for subsequent processes. The rectangular substrate is directly processed into an E-shaped workpiece by wire cutting. After clamping, metal glue is applied and then ground to enhance the fixing effect and improve the surface processing accuracy. By grinding off the horizontal rectangular structure of the E-shaped workpiece, multiple vertical rectangular substrates (i.e., metal substrates for encapsulation) can be obtained, reducing the positioning and cumulative errors caused by multiple clampings and improving the shape and position accuracy. Acetone cleaning ensures the surface cleanliness before electroplating, making the electroplating layer more uniform and firm and meeting strict quality requirements. Finally, defective products are removed through inspection. The full-process optimization from precision control, process improvement to quality inspection effectively solves the existing processing problems and improves production efficiency and product quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 is a schematic flow chart of the method of the present invention;

[0014] Figure 2 is a schematic diagram of cutting the E-shaped workpiece;

[0015] Figure 3 is a schematic diagram of the E-shaped workpiece;

[0016] Figure 4 is a schematic diagram of grinding the E-shaped workpiece. DETAILED DESCRIPTION OF THE INVENTION

[0017] The following specific examples illustrate the implementation manners of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation manners, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the drawings provided in the following examples only illustrate the basic concept of the present invention in a schematic manner. Without conflict, the following examples and the features in the examples can be combined with each other.

[0018] Among them, the drawings are only for illustrative purposes, showing only schematic diagrams, not physical diagrams, and should not be construed as a limitation to the present invention; in order to better illustrate the embodiments of the present invention, some components in the drawings will be omitted, enlarged or reduced, which do not represent the dimensions of the actual products; for those skilled in the art, it is understandable that some well-known structures and their descriptions in the drawings may be omitted.

[0019] In the drawings of the embodiments of the present invention, the same or similar reference numerals correspond to the same or similar components; in the description of the present invention, it should be understood that if there are terms such as "upper", "lower", "left", "right", "front", "rear", etc. indicating the orientation or positional relationship, it is based on the orientation or positional relationship shown in the drawings. This is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, the terms describing the positional relationship in the drawings are only for illustrative purposes and cannot be understood as a limitation of the present invention. For those of ordinary skill in the art, the specific meanings of the above terms can be understood according to specific circumstances.

[0020] Please refer to Figure 1 , the present invention provides a manufacturing method for a metal substrate for semiconductor packaging, including:

[0021] S1: Cut a rectangular substrate, and the rectangular substrate selected is a rectangular substrate with a thickness of D;

[0022] Preferably, the cutting of the rectangular substrate in step S1 includes:

[0023] S11: Import the design drawing into the cutting machine control system, set the cutting size and calibrate the position of the positioning groove;

[0024] S12: Place the substrate with a thickness of D on the cutting machine workbench, and start the cutting machine to cut the outer shape of the substrate; wherein, during the cutting process, the vision positioning system of the cutting machine scans the surface of the substrate in real time to identify the offset in the X-axis direction and the offset in the Y-axis direction between the actual position and the ideal position of the substrate; and automatically adjust the cutting path according to the offset in the X-axis direction and the offset in the Y-axis direction between the actual position and the ideal position of the substrate to ensure the cutting accuracy;

[0025] S13: After completing the outer shape cutting, cut out the positioning groove according to the calibrated position of the positioning groove to complete the cutting of the rectangular substrate.

[0026] In this embodiment, taking the substrate as AIN as an example to illustrate the above steps, it is known that the thickness of the AIN substrate required by the design drawing is 1.2 mm, but in this actual operation, an AIN substrate with a thickness D of 2.0 mm (0.8 mm thicker than the drawing requirement) is used. Import the design drawing into the control system of the cutting machine. Through the control system, set the specific cutting size, such as a length of 50 mm and a width of 30 mm. At the same time, calibrate the position of the positioning groove. Assume that the positioning groove is at a position 10 mm from the left edge and 10 mm from the lower edge of the substrate, and the size of the positioning groove is 10 mm in length and 2 mm in width.

[0027] Place an AIN substrate with a thickness of 2.0 mm on the workbench of the cutting machine, and start the cutting machine to cut the outer shape of the substrate. During the cutting process, the visual positioning system of the cutting machine starts to work. For example, during the cutting process, the visual positioning system detects that the actual position of the substrate is shifted 1 mm to the right compared to the ideal position in the X-axis direction and 0.5 mm upward compared to the ideal position in the Y-axis direction. At this time, the cutting machine automatically adjusts the cutting path according to the detected offset data. The cutting path that was originally supposed to start from the point (0, 0) is adjusted to start from the point (1, 0.5), and the subsequent cutting paths are adjusted accordingly to ensure that the final cut outer shape dimensions are accurate and still maintain the specifications of 50 mm in length and 30 mm in width. When the outer shape cutting is completed, the cutting machine cuts the positioning slots according to the previously calibrated positioning slot positions (10 mm from the left edge, 10 mm from the lower edge, with a length of 10 mm and a width of 2 mm). After the cutting is completed, a blanking rectangular substrate that meets the requirements is obtained, and this substrate can be used for further processing and manufacturing of subsequent electronic component bases. Through the above complete example, the entire process from selecting the substrate to finally completing the blanking rectangular substrate is demonstrated, as well as how to use the functions of the cutting machine to ensure the cutting accuracy during the cutting process.

[0028] S2: Grind the rectangular substrate on a grinding machine to the thickness required by the drawing;

[0029] Preferably, the step S2 includes:

[0030] S21: Fix the blanked and preliminarily positioned rectangular substrate on the grinding machine, and perform rough grinding on the rectangular substrate with a coarse grinding wheel. During the grinding process, control the surface temperature of the substrate to always remain in a low-temperature state through the cooling system, detect the Brinell hardness of the rectangular substrate with a hardness detection device, and adjust the grinding pressure and feed speed of the grinding machine based on the Brinell hardness of the rectangular substrate;

[0031] S22: After the rough grinding is completed, perform fine grinding on the rectangular substrate with a fine grinding wheel. During the grinding process, use a laser interferometer to real-time monitor the thickness deviation existing on the surface of the substrate, and intelligently adjust the grinding path and feed speed of the grinding machine according to the detected thickness deviation until the thickness required by the drawing is reached.

[0032] In this embodiment, an AIN rectangular substrate with a thickness of 2.0 mm after blanking and preliminary positioning is fixed on a grinding machine using a suitable fixture to ensure that the substrate does not move during the grinding process. Start the grinding machine and use a silicon carbide coarse grinding wheel with a mesh size of 80 - 180 to grind the rectangular substrate. During the grinding process, the cooling system starts to work and sprays a coolant, such as a water-based coolant, onto the grinding area to control the surface temperature of the substrate to remain at a low temperature state throughout the grinding process. Assume the temperature is controlled below 30 °C (to avoid affecting the substrate performance due to excessive temperature). The hardness detection device continuously detects the Brinell hardness of the rectangular substrate. Assume that the initially detected Brinell hardness of the AIN substrate is 200 HB (Brinell hardness unit). Based on this hardness value, the grinding machine system automatically adjusts the grinding pressure to 50 N (Newton) and the feed rate to 5 mm / min (millimeters per minute) to adapt to the change in substrate hardness and ensure the grinding effect. After a period of rough grinding, the thickness of the substrate is roughly ground to be close to the thickness required by the drawing, such as 1.4 mm. After the rough grinding is completed, replace it with a diamond fine grinding wheel with a mesh size of 400 - 1000 to perform fine grinding on the rectangular substrate. At this time, the laser interferometer starts to continuously monitor the thickness deviation on the surface of the substrate. Assume that the laser interferometer detects that the thickness of a certain area on the surface of the substrate is 1.42 mm, while the thickness of the adjacent area is 1.38 mm, with a thickness deviation of 0.04 mm. According to this detection result, the grinding machine system intelligently adjusts the grinding path, increases the grinding time for the area with a thickness of 1.42 mm, and reduces the feed rate of this area to 2 mm / min, while appropriately reducing the grinding time for the area with a thickness of 1.38 mm and keeping the feed rate at 4 mm / min. As the grinding continues, the laser interferometer continuously detects the thickness deviation and feeds it back to the grinding machine system, and the grinding machine system continuously adjusts the grinding path and feed rate. After multiple adjustments and grindings, finally, the thickness of the substrate reaches the required 1.2 mm of the drawing, and the thickness deviation of the entire surface of the substrate is controlled within an allowable minimum range, such as ±0.01 mm.

[0033] S3: Through sandblasting and cleaning, make the appearance of the rectangular substrate meet the requirements;

[0034] Preferably, the step S3 includes:

[0035] S31: Load the mixed abrasive into the sandblasting tank, fix the ground rectangular substrate on the workbench of the sandblasting equipment, and start the sandblasting equipment to perform sandblasting on the rectangular substrate;

[0036] S32: After the sandblasting treatment, use an ultrasonic cleaning machine to perform ultrasonic cleaning on the rectangular substrate in an alkaline cleaning agent solution;

[0037] S33: After step S32, use a megasonic cleaning device to perform ultrasonic cleaning on the rectangular substrate in a neutral cleaning agent to make the appearance of the rectangular substrate meet the requirements.

[0038] In this embodiment, aluminum oxide abrasive with a particle size of 50 μm and silicon carbide abrasive with a particle size of 30 μm are selected, mixed in a ratio of 3:2, and loaded into a sandblasting tank. Aluminum oxide has a high hardness and can effectively remove tiny burrs and flaws on the surface of the substrate; silicon carbide particles are finer and can help improve the uniformity of the surface after sandblasting. The AIN rectangular substrate, which has been polished and has reached the thickness of 1.2 mm required by the drawing, is fixed on the workbench of the sandblasting equipment using a special clamp to ensure that the substrate does not shake or shift during the sandblasting process. The air pressure of the sandblasting equipment is set to 0.5 MPa and the sandblasting time is 3 minutes. After starting the sandblasting equipment, the mixed abrasive is sprayed onto the surface of the AIN substrate at high speed under the action of high-pressure airflow. Through the impact and cutting action of the abrasive, the residual grinding marks and impurities on the surface of the substrate are removed, so that the surface forms a uniform rough texture to meet the requirements of the subsequent packaging process for surface bonding. After the sandblasting is completed, the surface of the substrate presents a uniform matte effect, and the roughness reaches about Ra0.8 μm. In the cleaning tank of the ultrasonic cleaning machine, add a 5% sodium hydroxide alkaline cleaning agent solution. Sodium hydroxide can effectively remove residual grease, organic pollutants, etc. on the surface of the substrate. Put the sandblasted AIN rectangular substrate into the cleaning tank of the ultrasonic cleaning machine, set the cleaning temperature to 50°C, the ultrasonic frequency to 40kHz, and the cleaning time to 10 minutes. Under the high-frequency vibration of the ultrasonic wave, countless tiny cavitation bubbles are generated. These bubbles generate a strong impact when they burst, peeling off the dirt on the surface of the substrate and dispersing it into the cleaning liquid, achieving a deep cleaning effect. Dilute the neutral surfactant cleaning agent (fatty alcohol polyoxyethylene ether, alkylphenol polyoxyethylene ether) in deionized water at a ratio of 1:100 and pour it into the cleaning tank of the megasonic cleaning equipment. The neutral cleaning agent can further remove the residual alkaline cleaning agent and fine particle impurities without damaging the surface of the substrate. Transfer the AIN substrate after alkaline cleaning to the megasonic cleaning equipment, set the cleaning temperature to 40°C, the megasonic frequency to 800kHz, and the cleaning time to 8 minutes. Megasonic waves have a higher frequency, and the cavitation effect they produce is more subtle and uniform, and can penetrate into the tiny pores and depressions on the surface of the substrate to remove extremely fine particles and chemical residues. After megasonic cleaning, the surface of the substrate becomes clean and transparent, without any visible stains or impurities, and the appearance meets the strict requirements for electronic packaging use, and can enter the subsequent process links.

[0039] See also Figure 2 and Figure 3 S4: cutting the rectangular substrate into a plurality of E-shaped workpieces, wherein the E-shaped workpiece includes a transverse rectangular structure and a plurality of vertical rectangular structures, and the upper surface of each vertical rectangular structure is integrally connected with the lower surface of the transverse rectangular structure;

[0040] Preferably, the step S4 comprises:

[0041] S41: Fix and install the rectangular base material on the CNC wire cutting machine tool according to the positioning grooves on the rectangular base material, and the positioning grooves cooperate with the positioning pins on the CNC wire cutting machine tool;

[0042] S42: Select a combined electrode wire of tungsten wire and molybdenum wire, and set the discharge gap according to the diameter of the electrode wire and the material properties of the rectangular base material;

[0043] S43: Mix the surfactant and deionized water evenly according to a preset ratio, and inject it into the working fluid tank of the machine tool;

[0044] S44: Start the CNC wire cutting machine tool to cut the rectangular base material. During the cutting process, under the flushing of the working fluid, the electrode wire performs layer-by-layer cutting on the workpiece through high-frequency pulsed discharge; the dynamic vibration damping device monitors the vibration of the machine tool workbench in real time. When the detected vibration amplitude exceeds the set threshold, the dynamic vibration damping device immediately generates a reverse force to offset the vibration; the laser rangefinder measures the change in the diameter of the electrode wire in real time. When it is detected that the diameter of the electrode wire decreases, the system automatically adjusts the cutting path to compensate for the dimensional deviation caused by the electrode wire loss and ensure the cutting dimensional accuracy; at the same time, when cutting the corner part of the E-shaped workpiece, the machine tool control system automatically reduces the cutting speed to reduce the discharge gap error at the corner and ensure the cutting accuracy at the corner.

[0045] In this embodiment, an AIN rectangular substrate is obtained after sandblasting and cleaning, and its surface is flat and clean. On the CNC wire cutting machine, the positioning pin has been installed and debugged in advance. Align the positioning groove on the rectangular substrate with the machine tool positioning pin, gently put it down and fix it, ensure that the positioning groove and the positioning pin are closely matched, so that the substrate remains stable during the cutting process. A combined electrode wire of tungsten wire with a diameter of 0.18mm and molybdenum wire with a diameter of 0.15mm is selected. Due to the high hardness and general conductivity of AIN material, according to its characteristics, the discharge gap is set to 0.02mm on one side. According to the ratio of 1:20, according to the ratio of 1:20, a surfactant (for example) is mixed with deionized water. In the machine tool working fluid tank, first pour a certain amount of deionized water, then slowly add the surfactant, and use a stirring device to stir it thoroughly until it is evenly mixed. The mixed working fluid has good lubrication, cooling and chip removal properties, which provides protection for the cutting process. Start the CNC wire cutting machine, the electrode wire begins to discharge under the action of the high-frequency pulse power supply, and the working fluid continuously flushes the cutting area. During the cutting process: the dynamic vibration reduction device monitors the vibration of the machine tool worktable in real time. Assuming that during the cutting process, abnormal vibration is generated due to the operation of the machine tool, and the vibration amplitude reaches the set threshold (such as 0.05mm), the dynamic vibration reduction device responds quickly and generates a reverse force, just like a stable support for the shaking table, offsetting the vibration and ensuring smooth cutting. The laser rangefinder continuously measures the change in electrode wire diameter. As the cutting progresses, the electrode wire gradually wears out. When it is detected that the electrode wire diameter decreases from the initial 0.18mm to 0.17mm, the system automatically calculates the electrode wire loss and adjusts the cutting path to compensate for the dimensional deviation caused by the thinning of the electrode wire, ensuring that the cutting size of the E-shaped workpiece always meets the accuracy requirements. When cutting to the corner of the E-shaped workpiece, the machine tool control system automatically reduces the cutting speed from the original 5mm / min to 2mm / min. By reducing the speed and reducing the discharge gap error at the corner, the cutting accuracy of the corner is guaranteed, and the cut E-shaped workpiece corner is clear and regular, meeting the design standards.

[0046] See also Figure 4 , S5: clamping and fixing the E-shaped workpiece cut by wire cutting, applying metal glue on the surface of the clamped and fixed E-shaped workpiece, and then grinding the horizontal rectangular structure part of the E-shaped workpiece by a grinding device to obtain a plurality of vertical rectangular substrates;

[0047] In this embodiment, first, the E-shaped workpiece is initially fixed by a fixture. The surface of the fixture is provided with protrusions matching the vertical rectangular structure slots of the E-shaped workpiece. The vertical rectangular structure is inserted into the fixture slots and initially fixed by the mechanical latches on the fixture. The main fixed part is the vertical rectangular structure of the E-shaped workpiece. Using a high-precision dispensing machine, a special high-temperature metal adhesive is evenly applied along the edge where the vertical rectangular structure of the E-shaped workpiece contacts the fixture. This metal adhesive is suitable for AIN materials, is in a semi-fluid state at room temperature, has good wettability, and can quickly fill the tiny gaps between the workpiece and the fixture after application. After curing, it can form a high-strength bonding force, further forming a fixed structure between the vertical rectangular structure of the E-shaped workpiece and the fixture. Then, using a grinding machine, the grinding head of the grinding machine grinds the horizontal rectangular structure part of the E-shaped workpiece. During the grinding process, the grinding head operates according to the set grinding parameters (such as rotation speed, pressure, grinding path, etc.). For example, the rotation speed of the grinding head is set to 2000 revolutions per minute, and the grinding pressure is 0.3 MPa. The material of the horizontal rectangular structure is gradually removed and processed into multiple independent vertical rectangular substrates. At the same time, the real-time monitoring system of the grinding equipment monitors the grinding process to ensure that the grinding accuracy and surface quality meet the requirements. By gradually removing the material of the horizontal rectangular structure and processing it into multiple independent vertical rectangular substrates, the number of clamping times during traditional substrate processing is reduced, improving production efficiency and product quality.

[0048] S6: Clean the vertical rectangular substrate obtained after grinding with acetone, and electroplate the vertical rectangular substrate after cleaning is completed;

[0049] Preferably, the cleaning the vertical rectangular substrate obtained after grinding with acetone includes:

[0050] S61: Put the vertical rectangular substrate obtained after grinding into an ultrasonic cleaning tank filled with acetone solution, and start the microwave-ultrasonic combined cleaning equipment to clean the vertical rectangular substrate;

[0051] S62: Put the vertical rectangular substrate cleaned in step S61 into an ultrasonic cleaning tank filled with clean water, and start the microwave-ultrasonic combined cleaning equipment to clean the vertical rectangular substrate again to obtain the cleaned vertical rectangular substrate.

[0052] In this embodiment, the vertically rectangular substrate obtained after grinding is placed in an ultrasonic cleaning tank filled with acetone solution. The microwave-ultrasonic combined cleaning equipment is started. Through the cavitation effect of ultrasonic waves and the auxiliary effect of microwaves, the dissolution and peeling of dirt on the substrate surface by acetone are accelerated. Ultrasonic waves generate tiny bubbles in the liquid. When these bubbles burst instantaneously, they produce a powerful impact force that can penetrate into the tiny pores and crevices on the substrate surface and shake off the dirt. Microwaves can further improve the cleaning efficiency and make acetone molecules act more actively with the dirt. The vertically rectangular substrate after acetone cleaning is taken out of the acetone cleaning tank and placed in another ultrasonic cleaning tank filled with clean water. The function of the clean water is to remove the residual acetone on the substrate surface and the dirt particles that may remain during the acetone cleaning process. The microwave-ultrasonic combined cleaning equipment is started again to perform secondary cleaning on the vertically rectangular substrate. This step also utilizes the cavitation effect of ultrasonic waves and the auxiliary effect of microwaves to ensure that the acetone and other impurities on the substrate surface are thoroughly cleaned.

[0053] S7: Inspect the vertically rectangular substrate after electroplating, reject defective products, and obtain the metal substrate for packaging.

[0054] Preferably, step S7 includes:

[0055] S71: Use a machine vision system to take pictures of the surface of the vertically rectangular substrate, and use image recognition algorithms to detect whether there are appearance defects on the surface;

[0056] S72: Use a laser displacement sensor to scan the vertically rectangular substrate from multiple angles and measure its dimensional data;

[0057] S73: Use a spectral analyzer to analyze the surface of the coating to determine the composition and thickness of the coating;

[0058] S74: Compare the test data with the preset standards. For the vertically rectangular substrates that do not meet the standards, automatically mark them and remove them by the robotic arm.

[0059] In this embodiment, the vertically rectangular AIN substrate after cleaning and electroplating treatment is placed on the detection workbench, and the machine vision system starts to work. This system is equipped with a high-resolution industrial camera, which can quickly take pictures of the substrate surface from multiple angles. For example, taking pictures vertically from above and from multiple directions such as a 45-degree angle to ensure comprehensive capture of the image information on the substrate surface. Advanced image recognition algorithms are used to analyze the taken images. These algorithms are trained with a large number of samples and can accurately identify various appearance defects, such as surface scratches, pits, cracks, etc. For example, for scratches wider than 0.05 mm, the algorithm can clearly mark them. If a scratch with a length of 0.5 mm and a width of 0.08 mm is detected on the substrate surface, the machine vision system will immediately record the defect information. High-precision laser displacement sensors are used to scan the vertically rectangular substrate from multiple angles. The sensors rotate around the substrate and emit laser beams from different directions to accurately measure the dimensions of each part of the substrate. For example, scanning from the front and back, left and right, up and down, etc. to ensure comprehensive acquisition of dimensional data. The laser displacement sensor calculates the distance of each point on the substrate surface by measuring the time and angle of laser reflection, thereby obtaining detailed dimensional information. Suppose the preset standard length of the vertically rectangular substrate is 10 mm, the width standard is 5 mm, and the height standard is 2 mm. During the scanning process, the sensor measures the length of a certain substrate to be 10.02 mm, the width to be 4.98 mm, and the height to be 2.01 mm, and these data will be recorded in real time. A spectral analyzer is used to analyze the coating surface. This instrument emits light of a specific wavelength, interacts with the substances on the coating surface, and generates spectral signals. By analyzing the spectral signals, the composition and thickness of the coating can be determined. For example, for a nickel-plated AIN substrate, the spectral analyzer can accurately detect the nickel content in the coating and the thickness of the coating. Suppose the preset standard thickness of the nickel coating is 0.1 mm. After analysis, it is found that the nickel coating thickness of a certain substrate is 0.09 mm, and the analyzer will record this data. The spectral analyzer can also detect whether there are other impurity elements in the coating. If a trace amount of iron element is detected in the coating, which may affect the performance of the substrate, the system will record this information as well. The information such as appearance defects, dimensional data, coating composition and thickness obtained from the above detections is compared with the preset standards. For example, for appearance defects, the preset standard is that scratches wider than 0.05 mm are not allowed; the dimensional deviation requirement is within ±0.03 mm; the nickel coating thickness deviation is within ±0.01 mm. Through comparison, it is found that a certain substrate has a scratch with a width of 0.08 mm, a length deviation of +0.02 mm, a width deviation of -0.02 mm, a height deviation of +0.01 mm, and a nickel coating thickness deviation of -0.01 mm. Since the appearance defects of this substrate do not meet the standards, the system will mark it as a non-conforming product.For the vertically rectangular base materials marked as unqualified, the robotic arm will automatically remove them from the inspection workbench according to the system's instructions and place them in a special collection box for defective products. The qualified base materials will be sent to the subsequent packaging process for preparation for leaving the factory. At the same time, this embodiment illustrates with AIN base materials. On the premise that those skilled in the art fully understand this solution, it is also possible to adaptively replace some conditions in the above content or obtain the production methods of corresponding base materials through limited experiments according to the production of base materials of other materials.

[0060] In summary, the present invention addresses the existing processing problems of rectangular base materials and significantly improves the manufacturing level of metal base plates by optimizing the process. Using a grinding machine to precisely control the thickness, avoiding the deformation problem of the base material caused by traditional grinding and ensuring the processing accuracy. Sandblasting and cleaning effectively improve the appearance quality and lay a solid foundation for subsequent processes. Wire cutting directly processes the rectangular base material into an E-shaped workpiece, applies metal glue after clamping and then grinds it, enhancing the fixing effect, improving the surface processing accuracy, reducing the positioning and cumulative errors caused by multiple clamping, and improving the shape and position accuracy. Acetone cleaning ensures the cleanliness of the surface before electroplating, making the electroplating layer more uniform and firm, meeting strict quality requirements. Finally, defective products are removed through inspection. The whole process is optimized from precision control, process improvement to quality inspection, effectively solving the existing processing problems and improving production efficiency and product quality.

[0061] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and not to limit them. Although the present invention has been described in detail with reference to the preferred embodiments, those of ordinary skill in the art should understand that the technical solutions of the present invention can be modified or equivalently replaced without departing from the spirit and scope of the present technical solution, and they should all be covered within the scope of the claims of the present invention.

Claims

1. A manufacturing method of a metal substrate for semiconductor packaging, characterized in that, include: S1: Cutting a rectangular substrate, wherein the rectangular substrate is a rectangular substrate with a thickness of D; S2: Grind the rectangular substrate on a grinder to the thickness required by the drawing; S3: Through sandblasting and cleaning, the appearance of the rectangular substrate meets the requirements; S4: cutting the rectangular substrate into a plurality of E-shaped workpieces, wherein the E-shaped workpiece includes a transverse rectangular structure and a plurality of vertical rectangular structures, and the upper surface of each vertical rectangular structure is integrally connected with the lower surface of the transverse rectangular structure; S5: clamping and fixing the E-shaped workpiece cut by wire cutting, applying metal glue on the surface of the clamped and fixed E-shaped workpiece, and then grinding the horizontal rectangular structure part of the E-shaped workpiece by a grinding device to obtain a plurality of vertical rectangular substrates; S6: using acetone to clean the vertical rectangular substrate obtained after grinding, and electroplating the vertical rectangular substrate after cleaning; S7: Inspect the vertical rectangular substrate after electroplating, remove defective products, and obtain a metal substrate for packaging.

2. The manufacturing method of a metal substrate for semiconductor packaging according to claim 1, wherein The step S1 comprises: S11: Import the design drawing into the cutting machine control system, set the material size and calibrate the positioning slot position; S12: placing a substrate with a thickness of D on a cutting machine workbench, and starting the cutting machine to cut the outer shape of the substrate; wherein, during the cutting process, the visual positioning system of the cutting machine scans the surface of the substrate in real time to identify that there is an X-axis offset and a Y-axis offset between the actual position of the substrate and the ideal position; and automatically adjusts the cutting path according to the X-axis offset and the Y-axis offset between the actual position of the substrate and the ideal position to ensure cutting accuracy; S13: After the shape cutting is completed, the positioning groove is cut according to the calibrated positioning groove position to complete the blanking of the rectangular substrate.

3. The manufacturing method of a metal substrate for semiconductor packaging according to claim 1, wherein, The step S2 comprises: S21: fixing the rectangular substrate after cutting and preliminary positioning on a grinding machine, performing rough grinding on the rectangular substrate by using a coarse grinding wheel, controlling the surface temperature of the substrate to always be kept at a low temperature during the grinding process by using a cooling system, detecting the Brinell hardness of the rectangular substrate by using a hardness detection device, and adjusting the grinding pressure and feed speed of the grinding machine based on the Brinell hardness of the rectangular substrate; S22: After the rough grinding is completed, the rectangular substrate is finely ground with a fine grinding wheel. During the grinding process, the thickness deviation on the substrate surface is monitored in real time by a laser interferometer. The grinding path and feed speed of the grinder are intelligently adjusted according to the detected thickness deviation until the required thickness of the drawing is reached.

4. The manufacturing method of a metal substrate for semiconductor packaging according to claim 1, wherein The step S3 comprises: S31: loading the mixed abrasive into the sandblasting pot, fixing the polished rectangular substrate on the workbench of the sandblasting equipment, and starting the sandblasting equipment to perform sandblasting on the rectangular substrate; S32: ultrasonically cleaning the rectangular substrate in an alkaline cleaning agent solution using an ultrasonic cleaning machine after the sandblasting process; S33: After step S32, the rectangular substrate is ultrasonically cleaned in a neutral cleaning agent using a megasonic cleaning device to ensure that the appearance of the rectangular substrate meets the requirements.

5. The manufacturing method of a metal substrate for semiconductor packaging according to claim 1, wherein, The step S4 comprises: S41: fixing the rectangular substrate on the CNC wire cutting machine according to the positioning groove on the rectangular substrate, wherein the positioning groove cooperates with the positioning pin on the CNC wire cutting machine; S42: Select a combined electrode wire of tungsten wire and molybdenum wire, and set the discharge gap according to the diameter of the electrode wire and the material properties of the rectangular substrate. S43: Mix the surfactant and deionized water evenly according to a preset ratio and inject them into the working fluid tank of the machine tool. S44: Start the CNC wire cutting machine tool to cut the rectangular substrate. During the cutting process, under the flushing of the working fluid, the electrode wire cuts the workpiece layer by layer through high-frequency pulsed discharge; the dynamic vibration damping device monitors the vibration of the machine tool workbench in real time. When the detected vibration amplitude exceeds the set threshold, the dynamic vibration damping device immediately generates a reverse force to offset the vibration; the laser rangefinder measures the change in the diameter of the electrode wire in real time. When it detects that the diameter of the electrode wire decreases, the system automatically adjusts the cutting path to compensate for the dimensional deviation caused by the electrode wire loss and ensure the cutting dimensional accuracy; at the same time, when cutting the corner part of the E-shaped workpiece, the machine tool control system automatically reduces the cutting speed to reduce the discharge gap error at the corner and ensure the cutting accuracy at the corner.

6. The manufacturing method of a metal substrate for semiconductor packaging according to claim 1, characterized in that The vertical rectangular substrate obtained by cleaning with acetone includes: S61: Put the vertically ground rectangular substrate into an ultrasonic cleaning tank filled with acetone solution, and start the microwave-ultrasonic combined cleaning equipment to clean the vertically rectangular substrate. S62: Put the vertically rectangular substrate cleaned in step S61 into an ultrasonic cleaning tank filled with clean water, and start the microwave-ultrasonic combined cleaning equipment to clean the vertically rectangular substrate again to obtain the cleaned vertically rectangular substrate.

7. The manufacturing method of a metal substrate for semiconductor packaging according to claim 1, wherein, The said step S7 includes: S71: Use a machine vision system to take pictures of the surface of the vertically rectangular substrate, and use an image recognition algorithm to detect whether there are appearance defects on the surface. S72: Use a laser displacement sensor to scan the vertically rectangular substrate from multiple angles and measure its dimensional data. S73: Use a spectral analyzer to analyze the surface of the coating to determine the composition and thickness of the coating. S74: Compare the detected data with the preset standards. For the vertically rectangular substrates that do not meet the standards, automatically mark them and remove them through a robotic arm.

Images