Substrate processing method, substrate processing apparatus, and substrate processing system

Abstract

The disclosed substrate processing method includes a step of placing a substrate on an electrostatic chuck of a substrate support portion of a substrate processing apparatus. The electrostatic chuck has a substrate supporting surface. The substrate comprises a back surface and an organic layer formed on the back surface in advance. The substrate is placed on the electrostatic chuck such that the organic layer is in contact with the substrate support surface. The substrate processing method further includes a step of holding the substrate by electrostatic adsorption by the electrostatic chuck. The substrate processing method further includes a step of processing the substrate in the substrate processing apparatus.

Description

Technical Field

[0001] Exemplary embodiments of the present invention relate to a substrate processing system. Background Art

[0002] A substrate processing apparatus is used to process a substrate. The substrate processing apparatus includes a chamber and a substrate support. The substrate support is disposed in the chamber. A technique of providing a diamond-like coating on the surface of the substrate support is disclosed in Patent Document 1 below.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2007-527625 Summary of the Invention

[0006] Technical Problem to be Solved by the Invention

[0007] The present invention provides a technique for suppressing damage to the back surface of a substrate.

[0008] Means for Solving the Technical Problem

[0009] In one exemplary embodiment, a substrate processing method is provided. The substrate processing method includes a step of placing a substrate on an electrostatic chuck of a substrate support portion of a substrate processing apparatus. The electrostatic chuck has a substrate support surface. The substrate includes a back surface and an organic layer previously formed on the back surface. The substrate is placed on the electrostatic chuck in such a manner that the organic layer is in contact with the substrate support surface. The substrate processing method further includes a step of holding the substrate by electrostatic adsorption based on the electrostatic chuck. The substrate processing method further includes a step of processing the substrate in the substrate processing apparatus.

[0010] Advantageous Effects of the Invention

[0011] According to one exemplary embodiment, damage to the back surface of the substrate can be suppressed. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a diagram for explaining a structural example of a plasma processing system.

[0013] Figure 2 It is a diagram for explaining a structural example of a capacitively coupled plasma processing apparatus.

[0014] Figure 3 It is a cross-sectional view showing a substrate support portion according to one exemplary embodiment.

[0015] Figure 4 It is a cross-sectional view showing a substrate support portion according to one exemplary embodiment.

[0016] Figure 5 is a flowchart of a substrate processing method according to an exemplary embodiment.

[0017] Figure 6 is a cross-sectional view of a substrate according to an exemplary embodiment.

[0018] Figure 7 In (a) to Figure 7 In (d) of are diagrams respectively showing examples of the structural formula of the organic layer WL.

[0019] Figure 8 is a flowchart of a substrate processing method according to another exemplary embodiment.

[0020] Figure 9 is a diagram showing a substrate processing system according to an exemplary embodiment.

[0021] Figure 10 is a diagram showing a film forming apparatus according to an exemplary embodiment.

[0022] Figure 11 is a diagram showing a removing apparatus according to an exemplary embodiment.

[0023] Figure 12 is a flowchart of a substrate processing method according to still another exemplary embodiment.

[0024] Figure 13 is a diagram showing a substrate processing apparatus according to another exemplary embodiment.

[0025] Figure 14 is a diagram showing a substrate processing apparatus according to still another exemplary embodiment.

[0026] Figure 15 is a cross-sectional view of a substrate support portion according to another exemplary embodiment. Detailed Embodiments

[0027] Hereinafter, various exemplary embodiments will be described in detail with reference to the drawings. In addition, in each drawing, the same or equivalent parts are denoted by the same reference numerals.

[0028] First, with reference to Figure 1 and Figure 2 a plasma processing apparatus as a substrate processing apparatus according to an exemplary embodiment will be described.

[0029] Figure 1This is a diagram for explaining a structural example of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support portion 11, and a plasma generation portion 12. The plasma processing chamber 10 has a plasma processing space. Further, the plasma processing chamber 10 has: at least one gas supply port for supplying at least one processing gas to the plasma processing space; and at least one gas discharge port for discharging gas from the plasma processing space. The gas supply port is connected to a gas supply portion 20 described later, and the gas discharge port is connected to an exhaust system 40 described later. The substrate support portion 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0030] The plasma generation portion 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space can be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), ECR plasma (Electron-Cyclotron-Resonance Plasma), helicon wave plasma (HWP), surface wave plasma (SWP), or the like. Also, various types of plasma generation portions including an AC (Alternating Current) plasma generation portion and a DC (Direct Current) plasma generation portion can be used. In one embodiment, the AC signal (AC power) used in the AC plasma generation portion has a frequency in the range of 100 kHz to 10 GHz. Accordingly, the AC signal includes an RF (Radio Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0031] The control unit 2 processes computer-executable commands for causing the plasma processing apparatus 1 to execute various processes described in the present invention. The control unit 2 can be configured to control each component of the plasma processing apparatus 1 in a manner that executes the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is implemented, for example, by a computer 2a. The processing unit 2a1 can be configured to read a program from the storage unit 2a2 and execute the read program, thereby performing various control operations. The program may be pre-stored in the storage unit 2a2 or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and is read and executed by the processing unit 2a1 from the storage unit 2a2. The medium may be various storage media readable by the computer 2a or may be a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), an HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 can communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).

[0032] Hereinafter, a structural example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1 will be described. Figure 2 FIG. is a diagram for explaining a structural example of a capacitively coupled plasma processing apparatus.

[0033] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. Further, the plasma processing apparatus 1 includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a showerhead 13. The substrate support unit 11 is disposed inside the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support unit 11. In one embodiment, the showerhead 13 forms at least a part of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, the side wall 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support unit 11 are electrically insulated from the frame of the plasma processing chamber 10.

[0034] The substrate support portion 11 includes a main body portion 111 and a ring assembly 112. The main body portion 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of the substrate W. In a plan view, the annular region 111b of the main body portion 111 surrounds the central region 111a of the main body portion 111. The substrate W is disposed on the central region 111a of the main body portion 111, and the ring assembly 112 is disposed on the annular region 111b of the main body portion 111 so as to surround the substrate W on the central region 111a of the main body portion 111. Therefore, the central region 111a is also referred to as a substrate support surface for supporting the substrate W, and the annular region 111b is also referred to as a ring support surface for supporting the ring assembly 112.

[0035] In one embodiment, the main body portion 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Additionally, other components surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have the annular region 111b. In this case, the ring assembly 112 can be disposed on the annular electrostatic chuck or the annular insulating member, or can be disposed on both the electrostatic chuck 1111 and the annular insulating member. And at least one RF / DC electrode combined with an RF power supply 31 and / or a DC power supply 32 described later can be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal described later is supplied to the at least one RF / DC electrode, the RF / DC electrode is also referred to as a bias electrode. Additionally, the conductive member of the base 1110 and the at least one RF / DC electrode can function as a plurality of lower electrodes. And the electrostatic electrode 1111b can function as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode.

[0036] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive material or an insulating material, and the cover rings are formed of an insulating material.

[0037] Further, the substrate support portion 11 may include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path 1110a. In one embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. Further, the substrate support portion 11 may include a heat transfer gas supply portion configured to supply a heat transfer gas to a gap between the back surface of the substrate W and the central region 111a.

[0038] The showerhead 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas introduction ports 13c. The process gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c through the gas diffusion chamber 13b. Further, the showerhead 13 includes at least one upper electrode. In addition, the gas introduction unit may include, in addition to the showerhead 13, one or more side gas injectors (SGIs) mounted on one or more openings formed in the side wall 10a.

[0039] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from their respective corresponding gas sources 21 to the showerhead 13 via their respective corresponding flow controllers 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure control type flow controller. In addition, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of at least one process gas.

[0040] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. Thereby, a plasma is formed from at least one process gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Further, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated on the substrate W, and the ion component in the formed plasma can be drawn into the substrate W.

[0041] In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is configured to generate a source RF signal (source RF power) for generating plasma by being coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0042] The second RF generation unit 31b is configured to generate a bias RF signal (bias RF power) by being coupled to at least one lower electrode via at least one impedance matching circuit. The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0043] Also, the power supply 30 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generation unit 32a and a second DC generation unit 32b. In one embodiment, the first DC generation unit 32a is configured to be connected to at least one lower electrode to generate a first DC signal. The generated first DC signal is applied to at least one lower electrode. In one embodiment, the second DC generation unit 32b is configured to be connected to at least one upper electrode to generate a second DC signal. The generated second DC signal is applied to at least one upper electrode.

[0044] In various embodiments, the first and second DC signals can be pulsed. In this case, a voltage pulse sequence is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulse can have a pulse waveform of rectangular, trapezoidal, triangular, or a combination thereof. In one embodiment, a waveform generation unit for generating a voltage pulse sequence from a DC signal is connected between the first DC generation unit 32a and at least one lower electrode. Therefore, the first DC generation unit 32a and the waveform generation unit constitute a voltage pulse generation unit. When the second DC generation unit 32b and the waveform generation unit constitute a voltage pulse generation unit, the voltage pulse generation unit is connected to at least one upper electrode. The voltage pulse can have a positive polarity or a negative polarity. Also, the voltage pulse sequence can include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses within one cycle. Additionally, the first and second DC generation units 32a, 32b can be provided on the basis of the RF power supply 31, or the first DC generation unit 32a can be provided in place of the second RF generation unit 31b.

[0045] The exhaust system 40 can be connected, for example, to a gas discharge port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 can include a pressure regulating valve and a vacuum pump. The pressure inside the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump can include a turbo molecular pump, a dry pump, or a combination thereof.

[0046] Hereinafter, Figure 2 in conjunction with Figure 3 and Figure 4 . Figure 3 and Figure 4 are cross-sectional views showing a substrate support part according to an exemplary embodiment. As described above, the substrate support part 11 includes an electrostatic chuck 1111. As Figure 3 and Figure 4 show, the electrostatic chuck 1111 includes a substrate support surface 1111c and an annular support surface 1111d. The substrate support surface 1111c is the above-mentioned central region 111a. The substrate support surface 1111c is constituted by the top surfaces of a plurality of convex portions 1111p protruding upward in the electrostatic chuck 1111. As will be described later, the substrate W has an organic layer WL formed in advance on its back surface Wr. The substrate W is placed on the electrostatic chuck 1111 with the organic layer WL in contact with the substrate support surface 1111c. In a state where the substrate W is placed on the electrostatic chuck 1111, the plurality of convex portions 1111p provide a gap between them and between the substrate W and the upper surface of the electrostatic chuck 1111.

[0047] The substrate support portion 11 may further include a gas supply pipe 111g for supplying a heat transfer gas such as He gas to the gap between the substrate W and the upper surface of the electrostatic chuck 1111. A supply portion 113 of the heat transfer gas is connected to the gas supply pipe 111g. The gas supply pipe 111g provides a gas supply port 111h at its upper end. The gas supply port 111h opens toward the gap between the substrate W and the upper surface of the electrostatic chuck 1111.

[0048] The electrostatic electrode 1111b of the electrostatic chuck 1111 is provided between the substrate support surface 1111c and the lower surface of the electrostatic chuck 1111. A DC power supply 114 is connected to the electrostatic electrode 1111b via a switch.

[0049] The plasma processing apparatus 1 may further include a support body 115. The support body 115 is configured to be movable up and down relative to the substrate support surface 1111c and to support the substrate W at a position separated upward from the substrate support surface 1111c. The support body 115 may include a plurality of lift pins 115p. The plurality of lift pins 115p are inserted into through holes formed in the main body portion 111 of the substrate support portion 11. The plurality of lift pins 115p are moved up and down by a drive portion 115d.

[0050] As Figure 4 shown, when the tips of the plurality of lift pins 115p are located at positions higher than the substrate support surface 1111c, they come into contact with the substrate W. Thus, the support body 115 supports the substrate W at a position separated upward from the substrate support surface 1111c. Further, when the organic layer WL is formed on the entire back surface Wr of the substrate W, the tips of the plurality of lift pins 115p come into contact with the organic layer WL. Alternatively, the organic layer WL may be formed in regions of the back surface Wr of the substrate W other than a plurality of regions Wp where the support body 115 (tips of the plurality of lift pins 115p) comes into contact, and may not be formed in the plurality of regions Wp. In this case, the support body 115 (tips of the plurality of lift pins 115p) comes into contact with the plurality of regions Wp of the back surface Wr of the substrate W.

[0051] Hereinafter, with reference to Figure 5 , a substrate processing method according to an exemplary embodiment will be described. Figure 5 Each step of the substrate processing method (hereinafter referred to as "method MT") shown can be performed by controlling each part of the plasma processing apparatus 1 based on the control unit 2.

[0052] Figure 5The substrate processing method shown below (hereinafter referred to as "Method MT") starts from process STa. In process STa, the substrate W is placed on the electrostatic chuck 1111. As described above, the substrate W includes a back surface Wr and an organic layer WL. The organic layer WL is pre-formed on the back surface Wr. The organic layer WL may have a coefficient of friction lower than that of the back surface Wr of the substrate W.

[0053] The organic layer WL may be formed over the entire back surface Wr. Alternatively, the organic layer WL may be formed locally on the back surface Wr. For example, the organic layer WL may not be formed in the central region of the back surface Wr, or may be formed in the outer region of the back surface Wr. The outer region of the back surface Wr includes the edge of the back surface Wr. In this case, the organic layer WL having a low coefficient of friction exists in a region where relatively large friction may be generated on the substrate support surface 1111c. Therefore, damage to the back surface Wr of the substrate W and wear and damage to the substrate support surface 1111c in such a region can be suppressed.

[0054] Figure 6 is a cross-sectional view of a substrate according to an exemplary embodiment. As Figure 6 shown, the organic layer WL may not be formed in the above-described plurality of regions Wp. In a substrate processing apparatus such as the plasma processing apparatus 1 used in the subsequent process STc, when the substrate W is supported above the substrate support surface 1111c, the support 115 (the front ends of the plurality of lift pins 115p) abuts against the plurality of regions Wp. Since these regions Wp have a relatively high coefficient of friction, displacement of the position of the substrate W on the support 115 (the front ends of the plurality of lift pins 115p) due to sliding can be suppressed.

[0055] Further, the organic layer WL may not be formed in the region within the back surface Wr that contacts the pick-up of a transfer device (for example, various transfer robots described later) when transferring the substrate W. In this case, displacement caused by sliding of the substrate W relative to the pick-up can be suppressed.

[0056] Figure 7 of (a) to Figure 7 of (d) are diagrams respectively showing examples of the structural formula of the organic layer. As Figure 7 of (a) to Figure 7 of (d) illustrated, the organic layer WL of the organic layer WL is formed by substituting the hydrogen of the silanol group (Si-OH) in the back surface Wr of the substrate W with a carbon-containing group R to convert the silanol group into Si-OR. The carbon-containing group R may be a hydrophobic group containing carbon. The organic layer WL may contain carbon, or may contain silicon and carbon. Further, the organic layer WL may be a monolayer.

[0057] As Figure 7As shown in (a) of , the organic layer WL may contain silicon and oxygen. The organic layer WL may contain a trimethylsilyl group. In this case, the organic layer WL is formed by supplying a film-forming gas containing 1,1,1,3,3,3-hexamethyldisilazane (HMDS) to the back surface Wr of the substrate W. Additionally, the film-forming gas may be any gas that can convert the silanol groups on the back surface Wr into Si-OR. For example, the film-forming gas may be a gas containing a non-silane agent such as dimethyl carbonate and / or bis(trifluoromethyl) carbonate. In this case, the resulting organic layer WL may contain a trifluoroacetyl group as shown in Figure 7 (b) of , or may contain an acetyl group as shown in Figure 7 (c) of . Also, the film-forming gas may be a fluorinated silazane. In this case, the resulting organic layer WL may contain tris(trifluoro)methyl as shown in Figure 7 (d) of . And the film-forming gas is not limited to a gas containing a silylating agent or dimethyl carbonate as long as it can make the friction coefficient of the organic layer WL smaller than that of the back surface Wr.

[0058] In process STa, the substrate W is placed on the electrostatic chuck 1111 in such a way that the organic layer WL contacts the substrate support surface 1111c. In process STa, the drive unit 115d can be controlled to place the substrate W on the substrate support surface 1111c.

[0059] Next, in method MT, process STb is performed. In process STb, the substrate W is held (fixed) by the electrostatic chuck 1111 based on electrostatic adsorption. In process STb, a voltage is applied to the electrostatic electrode 1111b to hold the substrate W.

[0060] Next, in method MT, process STc is performed. Process STc is performed while the substrate W is held by the electrostatic chuck 1111. In process STc, the substrate W is processed inside the chamber 10. The processing of the substrate W may be etching or plasma etching of the substrate W. In this case, the plasma processing apparatus 1 is an etching apparatus. In process STc, the gas supply unit 20 is controlled to supply a processing gas into the chamber 10. And the exhaust system 40 is controlled to adjust the pressure inside the chamber 10 to a specified pressure. In process STc, the power supply 30 may be controlled to supply a first RF signal and / or a second RF signal to generate plasma.

[0061] In method MT, the substrate W is held by the electrostatic chuck 1111 in a state where the organic layer WL contacts the substrate support surface 1111c. Since the organic layer WL has a low coefficient of friction, damage to the back surface Wr of the substrate W when the substrate W is held by the electrostatic chuck 1111 can be suppressed. Also, wear and damage to the substrate support surface 1111c can be suppressed. As a result, generation of particles can be suppressed. In addition, damage to the back surface Wr of the substrate W and wear and damage to the substrate support surface 1111c include damage to the back surface Wr of the substrate W and wear and damage to the substrate support surface 1111c caused by sliding between the back surface Wr of the substrate W and the substrate support surface 1111c due to thermal input from the plasma or a change in the set temperature of the substrate W, or both, resulting in thermal expansion and contraction.

[0062] Also, according to the organic layer WL, variation in the contact area between the substrate W and the substrate support surface 1111c can be suppressed. Therefore, leakage of the heat transfer gas caused by wear and / or damage to the substrate support surface 1111c is suppressed. Therefore, variation in the cooling efficiency of the substrate W is suppressed.

[0063] Hereinafter, with reference to Figure 8 , a substrate processing method according to another exemplary embodiment will be described. Figure 8 is a flowchart of a substrate processing method according to another exemplary embodiment. Hereinafter, the Figure 8 shown substrate processing method (hereinafter referred to as "method MTA") will be described from the viewpoint of differences from method MT. Method MTA is performed in a substrate processing system.

[0064] Figure 9 is a diagram showing a substrate processing system according to an exemplary embodiment. Figure 9 The shown substrate processing system PS can be used in method MTA. The substrate processing system PS includes a loading module LM, an aligner AN, a storage SR, load lock modules LL1, LL2, transfer modules TM1, TM2, processing modules PM1 to PM12, and the like.

[0065] The loading module LM includes a cavity. The pressure inside the cavity of the loading module LM is set to atmospheric pressure. The loading module LM may have an FFU (Fan Filter Unit). The loading module LM is, for example, an EFEM (Equipment FrontEnd Module). The loading module LM is arranged between each of the loading ports LP1 to LP4 and each of the loading lock modules LL1 and LL2. The loading ports LP1 to LP4 are arranged along one of the pair of edge portions of the loading module LM in the long side direction. The load lock modules LL1 and LL2 are arranged along the other of the pair of edge portions of the loading module LM in the long side direction. Each of the loading ports LP1 to LP4 is configured to support the cassette CST placed thereon. The cassette CST is a container for accommodating a plurality of substrates W. The cassette CST is, for example, a FOUP (Front-Opening Unified Pod).

[0066] The loading module LM further includes a transfer robot TR3. The transfer robot TR3 is provided in the cavity of the loading module LM. The transfer robot TR3 may include a multi-joint arm AR31 and a picker FK31. The picker FK31 is mounted at the front end of the multi-joint arm AR31 and is configured to support the substrate W placed thereon. The transfer robot TR3 transfers the substrate W according to the movement instruction output by the control unit CU described later. The transfer robot TR3 transfers the substrate W between any two of the cassette CST placed on at least one of the loading ports LP1 to LP4, the load lock modules LL1 and LL2, the aligner AN, and the storage SR.

[0067] The aligner AN is arranged along one of the pair of edge portions of the loading module LM in the short side direction. The aligner AN may also be arranged along the edge portion of the loading module LM in the long side direction. Further, the aligner AN may be arranged in the cavity of the loading module LM. The aligner AN has a support table, an optical sensor, etc. The support table of the aligner AN can rotate and supports the substrate W placed thereon. The aligner AN uses the optical sensor to detect the angular position of the mark (such as a notch) of the substrate W on the support table and the center position of the substrate W on the support table. The control unit CU controls the rotation of the support table of the aligner AN to correct the offset of the angular position of the substrate W by correcting the angular position of the mark (such as a notch) of the substrate W on the support table to a reference angular position. Further, the control unit CU controls the position of the picker FK31 when receiving the substrate W from the aligner AN onto the picker FK31 so that the center of the substrate W is located at a specified position of the picker FK31.

[0068] The memory SR is arranged along the edge part of the loading module LM in the long side direction. The memory SR can also be arranged along the edge part of the loading module LM in the short side direction. Further, the memory SR can also be provided inside the loading module LM. The memory SR is configured to accommodate the substrate W therein.

[0069] The load lock modules LL1 and LL2 are respectively arranged between the transfer module TM1 and the loading module LM. The load lock modules LL1 and LL2 respectively provide a pre-pressure reduction chamber. The load lock modules LL1 and LL2 are respectively connected to the loading module LM via the gate valve G3. The load lock modules LL1 and LL2 are respectively connected to the transfer module TM1 via the gate valve G2.

[0070] The transfer modules TM1 and TM2 respectively include a cavity. The transfer modules TM1 and TM2 are respectively configured to transfer the substrate W through the depressurized space in their cavities. The cavity of the transfer module TM1 is connected to each of the load lock modules LL1 and LL2 via the gate valve G2. The processing modules PM1 to PM6 are connected to the cavity of the transfer module TM1 via the gate valve G1. The cavity of the transfer module TM1 is connected to the cavity of the transfer module TM2. The processing modules PM7 to PM12 are connected to the cavity of the transfer module TM2 via the gate valve G1.

[0071] The transfer module TM1 includes a transfer robot TR1 provided in its cavity. The transfer robot TR1 may include multi-joint arms AR11 and AR12 and pickers FK11 and FK12. The picker FK11 is mounted at the front end of the multi-joint arm AR11 and is configured to support the substrate W placed thereon. The picker FK12 is mounted at the front end of the multi-joint arm AR12 and is configured to support the substrate W placed thereon. The transfer robot TR1 transfers the substrate W according to the motion instruction output by the control unit CU described later. The transfer robot TR1 holds the substrate W by the pickers FK11 and FK12. The transfer robot TR1 transfers the substrate W between any two of the load lock modules LL1 and LL2, the processing modules PM1 to PM6, the cavity of the transfer module TM1, and the path between the cavity of the transfer module TM1 and the cavity of the transfer module TM2.

[0072] The transfer module TM2 includes a transfer robot TR2 disposed in its cavity. The transfer robot TR2 may include multi-joint arms AR21, AR22 and pickers FK21, FK22. The picker FK21 is installed at the front end of the multi-joint arm AR21 and is configured to support the substrate W placed thereon. The picker FK22 is installed at the front end of the multi-joint arm AR22 and is configured to support the substrate W placed thereon. The transfer robot TR2 transfers the substrate W according to the motion instructions output by the control unit CU described later. The transfer robot TR2 holds the substrate W by the pickers FK21, FK22. The transfer robot TR2 transfers the substrate W between any two of the processing modules PM7 to PM12 and the above-mentioned path.

[0073] Each of the processing modules PM1 to PM12 is configured to perform dedicated processing on the substrate W. At least one of the processing modules PM1 to PM12 is a substrate processing device such as the plasma processing device 1 described above.

[0074] The substrate processing system PS further includes a film forming device 200 and a removing device 400. The film forming device 200 is a device configured to form an organic layer WL on the back surface Wr of the substrate W. The removing device 400 is a device configured to remove the organic layer WL from the back surface Wr of the substrate W. Figure 9 In the example shown, the film forming device 200 and the removing device 400 are each connected to the cavity of the loading module LM. Examples of each of the film forming device 200 and the removing device 400 will be described later.

[0075] The control unit CU is, for example, a computer. The control unit CU includes a CPU (Central Processing Unit), a RAM (Random Access Memory), a ROM (Read Only Memory), an auxiliary storage device, etc. The CPU operates according to a program stored in the ROM or the auxiliary storage device and controls each part of the substrate processing system PS. In addition, the control unit 2 may also serve as the control unit CU.

[0076] In addition, the substrate processing system PS is not limited to Figure 9 the substrate processing system shown. For example, the number of processing modules and / or the number of pickers in the substrate processing system may be different from Figure 9 that shown. And, the substrate processing system may be a system (so-called loading type system) in which a plurality of module groups each including a processing module and a load lock module are connected to the loading module. And, the substrate processing system may be a system (so-called cluster type system) in which two or more processing modules are arranged and connected in a manner surrounding the transfer module.

[0077] Hereinafter, with reference to Figure 10 , the film forming apparatus 200 will be described. Figure 10 FIG. is a diagram showing a film forming apparatus according to an exemplary embodiment. The film forming apparatus 200 includes a chamber 201 (film forming chamber). The chamber 201 includes a lower member 202 and an upper member 203. The lower member 202 includes a hot plate 220 and an outer portion 221. The hot plate 220 has a radius larger than the radius of the substrate W. The outer portion 221 has a cylindrical shape. The lower end of the outer portion 221 is closed, providing a space that opens upward. The hot plate 220 is disposed within the space provided by the outer portion 221.

[0078] One or more heaters 222 are provided in the hot plate 220. The one or more heaters 222 are resistance heating elements. In one embodiment, a plurality of heaters 222 having an annular shape may be arranged concentrically around the central axis of the hot plate 220.

[0079] The film forming apparatus 200 further includes a plurality of clearance pins 223 as a support for supporting the substrate within the chamber 201. The plurality of clearance pins 223 are arranged to protrude upward with respect to the surface of the hot plate 220. In addition, the distance between the front end of each of the plurality of clearance pins 223 and the surface of the hot plate 220 is, for example, 1 mm. The front ends of the plurality of clearance pins 223 abut against the back surface Wr of the substrate W placed thereon. The plurality of clearance pins 223 may be arranged to abut against the plurality of regions Wp described above.

[0080] The film forming apparatus 200 further includes a plurality of lift pins 224. The plurality of lift pins 224 are arranged at a position closer to the central axis of the hot plate 220 than the plurality of clearance pins 223 and are arranged circumferentially around the central axis of the hot plate 220. The plurality of clearance pins 223 can be lifted and lowered through a plurality of through holes in the hot plate 220. The plurality of lift pins 224 are connected to a lift mechanism 226.

[0081] The hot plate 220 provides a gas flow path 231. The gas flow path 231 extends on the central axis of the hot plate 220 and penetrates the hot plate 220. The front end (upper end) of the gas flow path 231 constitutes a gas supply port 232 (third gas supply port). The gas supply port 232 is provided so as to be able to supply a film forming gas to the back surface Wr of the substrate W. The gas supply port 232 is provided at a position facing the back surface Wr (or its center) of the substrate W placed on the plurality of clearance pins 223. The gas flow path 231 penetrates the outer portion 221 and is connected to a gas supply pipe 233. The gas supply pipe 233 is connected to a gas source 235 via a valve V1, a flow regulator 234, and a valve V2. The gas source 235 is a supply source of the above-described film forming gas. The film forming gas includes a vapor of a raw material such as HMDS. The film forming gas may further include a carrier gas such as nitrogen.

[0082] The upper component 203 includes a cover portion 241. The cover portion 241 has a cylindrical shape with an opening at the lower end. The cover portion 241 is arranged to cover the space above the lower component 202. The cover portion 241 includes a peripheral wall portion 242. The peripheral wall portion 242 is disposed on the upper surface of the exterior portion 221. The lower surface of the peripheral wall portion 242 is hermetically joined to the upper surface of the exterior portion 221 on the outer side with respect to the exhaust passage 205 described later, whereby the cover portion 241 and the exterior portion 221 form a processing space 201S. A part of the cover portion 241 constitutes a top portion 241a that divides the processing space 201S from above. The cover portion 241 can be made liftable and lowerable by a lifting mechanism 204. In a state where the cover portion 241 is disposed above the exterior portion 221, it is possible to transfer the substrate W between an external transfer device (e.g., a transfer robot) and a plurality of lifting pins 224.

[0083] A gas flow path 243 is provided in the top portion 241a. The gas flow path 243 extends along the central axis of the top portion 241a and penetrates the top portion 241a. The gas flow path 243 has a gas supply port 243a (first gas supply port) that opens toward the processing space 201S at its lower end. The gas supply port 243a is arranged to supply an inert gas to the center of the upper surface of the substrate W. The gas supply port 243a is disposed at a position facing the center of the upper surface of the substrate W supported by a plurality of clearance pins 223. The upper end of the gas flow path 243 is connected to a gas supply pipe 244. The gas supply pipe 244 is connected to a gas source 246 via a valve V3 and a flow regulator 245. The gas source 246 is a supply source of an inert gas such as nitrogen.

[0084] The top portion 241a also has a plurality of gas flow paths 251. The plurality of gas flow paths 251 are arranged in a circumferential direction around the central axis of the top portion 241a. The plurality of gas flow paths 251 may be arranged at equal intervals. The plurality of gas flow paths 251 penetrate the top portion 241a. Each of the plurality of gas flow paths 251 has a gas supply port 251a (second gas supply port) that opens toward the processing space 201S at its lower end. The gas supply port 251a is arranged to supply an inert gas to the edge region of the upper surface of the substrate W. The gas supply port 251a is disposed at a position facing the edge region of the upper surface of the substrate W supported by a plurality of clearance pins 223. In addition, the diameter of the gas supply port 251a of each of the plurality of gas flow paths 251 is, for example, 3 mm. And the interval between the circumferentially adjacent gas supply ports 251a is, for example, 3 mm.

[0085] The upper end of each of the plurality of gas flow paths 251 communicates with a head portion 252. The head portion 252 is connected to a gas supply pipe 253. The gas supply pipe 253 is connected to the gas source 246 via a valve V4 and a flow regulator 254. As described above, the gas source 246 is a supply source of an inert gas such as nitrogen.

[0086] The cover portion 241 provides a plurality of exhaust channels 205 inside its peripheral wall portion 242. The plurality of exhaust channels 205 extend in the vertical direction and penetrate the peripheral wall portion 242. The plurality of exhaust channels 205 are arranged circumferentially around the central axis of the cover portion 241. The plurality of exhaust channels 205 may be arranged at equal intervals. The lower surface of the peripheral wall portion 242 is in close contact with the upper surface of the exterior portion 221 on the outer side with respect to the exhaust channels 205, and is separated from the upper surface of the exterior portion 221 on the inner side with respect to the exhaust channels 205. Thus, an annular exhaust port 206 leading to the exhaust channels 205 is formed between the lower surface of the peripheral wall portion 242 and the exterior portion 221.

[0087] An exhaust chamber 207 is provided on the peripheral edge portion of the upper surface of the cover portion 241. The exhaust chamber 207 extends circumferentially and communicates with the exhaust channels 205. A plurality of exhaust pipes 208 are connected to the exhaust chamber 207. The plurality of exhaust pipes 208 are arranged circumferentially. The plurality of exhaust pipes 208 are connected to an exhaust duct at their downstream ends and the like.

[0088] The film forming apparatus 200 may further include a control unit 300. The control unit 300 controls each part of the film forming apparatus 200. The control unit 300 is constituted by, for example, a computer having a CPU or a memory, etc., and has a program storage unit. A program for controlling various processes in the film forming apparatus 200 is stored in the program storage unit. For example, the control unit 300 controls the opening and closing of the valves V1 to V4, the elevating mechanisms 204, 226, and the flow regulators 234, 245, 254 according to this program. In addition, this program may be a program recorded in a computer-readable storage medium H, or a program installed in the control unit 300 from the storage medium H. And, this program may be a program installed via a network. The storage medium H may be a temporary storage medium or a non-temporary storage medium. In addition, the control unit 2 may also serve as the control unit 300.

[0089] When forming an organic layer WL on the back surface Wr of the substrate W in the film forming apparatus 200, first, the cover portion 241 rises, and the substrate W is transported into the cavity 201 by an external transport device. Then, the substrate W is delivered to the plurality of lifting pins 224. Next, after the transport device retreats to the outside of the cavity 201, the cover portion 241 descends, thereby sealing the inside of the cavity 201.

[0090] Next, the plurality of lifting pins 224 descend, and the substrate W is delivered from the plurality of lifting pins 224 to the plurality of clearance pins 223.

[0091] Then, valves V3 and V4 are opened, and an inert gas from the gas source 246 is supplied into the chamber 201. The inert gas is supplied from the gas supply port 243a toward the center of the upper surface of the substrate W, and from the plurality of gas supply ports 251a toward the edge region of the upper surface of the substrate W. Further, valves V1 and V2 are opened, and a film-forming gas from the gas source 235 is supplied into the chamber 201. The film-forming gas is supplied from the gas supply port 232 toward the center of the back surface Wr of the substrate W and flows in the radial direction along the back surface Wr of the substrate W. The gas in the processing space 201S is exhausted from the peripheral portion of the substrate W through the exhaust port 206. Thus, the organic layer WL is formed on the back surface Wr of the substrate W. Further, when forming the organic layer WL, the substrate W can be heated by heat from one or more heaters 222.

[0092] This film-forming apparatus 200 can suppress the supply of the film-forming gas toward the upper surface of the substrate W. Therefore, according to the film-forming apparatus 200, it is possible to suppress the formation of the organic layer WL on the upper surface of the substrate W while forming the organic layer WL on the back surface Wr.

[0093] Hereinafter, with reference to Figure 11 , the removing apparatus 400 will be described. Figure 11 FIG. is a diagram showing a removing apparatus according to an exemplary embodiment. The removing apparatus 400 includes a housing 411. The housing 411 has, for example, a square and horizontally long shape. The housing 411 provides a transfer port 412 on its side wall extending in the short side direction. Between the inside and the outside of the housing 411, the substrate W is transferred through the transfer port 412 by a transfer device (e.g., a transfer robot). The transfer port 412 can be opened and closed by a shutter 413. Further, in the following description, the long side direction and the short side direction of the housing 411 are referred to as the X direction and the Y direction, respectively. Also, the inner end of the housing 411 in the direction opposite to the direction where the transfer port 412 is located is referred to as the rear, and the opposite direction is referred to as the front.

[0094] The removing apparatus 400 further includes a rotary chuck 421, a light irradiation unit 403, and a substrate holding unit 405. The space inside the housing 411 is divided into an upper space 415 and a lower space 416 by a plate 414. The rotary chuck 421, the light irradiation unit 403, and the substrate holding unit 405 are provided in the upper space 415.

[0095] The light irradiation unit 403 is configured to emit light upward. The organic layer WL is removed from the back surface Wr of the substrate W by being irradiated with light from the light irradiation unit 403. The substrate holding unit 405 is configured to locally hold the substrate W and move the substrate W in such a manner as to pass through the upper region of the light irradiation unit 403 to irradiate the organic layer WL with light. The rotary chuck 421 is configured to mediate the transfer of the substrate W between the transfer device (or transfer robot) and the substrate holding unit 405, and change the orientation of the substrate W so that the substrate holding unit 405 can hold different positions of the substrate W.

[0096] The rotary chuck 421 has a substantially disc shape and is disposed on the front side with respect to the light irradiation unit 403 in the upper space 415. The upper surface of the rotary chuck 421 supports the substrate W placed thereon. Suction ports are opened on the upper surface of the rotary chuck 421. A pipe 424 is connected to the suction ports. The pipe 424 is connected to the exhaust source 420 via the valve V41. The exhaust source 420 is, for example, an exhaust passage of a factory provided with the removing device 400 and is at a negative pressure with respect to the atmospheric pressure. When the valve V41 is opened, the central portion of the substrate W is attracted to the suction ports. As a result, the substrate W is held in a horizontal state on the upper surface of the rotary chuck 421. When the valve V41 is closed, the suction of the substrate W stops.

[0097] The lower part of the rotary chuck 421 is connected to the rotation mechanism 422. The lower part of the rotation mechanism 422 is located in the lower space 416 and is supported by the support table 423. The rotation mechanism 422 rotates about its central axis. Thereby, the rotary chuck 421 rotates, and the angle of the rotation direction of the substrate W is adjusted.

[0098] The light irradiation unit 403 is disposed on the rear side with respect to the rotary chuck 421 in the upper space 415, and the light irradiation unit 403 has an ultraviolet lamp 431 inside. The upper surface of the light irradiation unit 403 includes a window portion 432. The window portion 432 may have a rectangular shape elongated in the Y direction. The length of the window portion 432 in the Y direction is the same as or longer than the diameter of the substrate W. The center of the window portion 432 in the Y direction is aligned with the center of the rotary chuck 421 in the X direction. The window portion 432 is located above the ultraviolet lamp 431. The light irradiated from the ultraviolet lamp 431 transmits through the window portion 432 and is emitted upward from the light irradiation unit 403. The light emitted from the window portion 432 is, for example, ultraviolet light (i.e., vacuum ultraviolet light) having a wavelength in the range of 10 nm to 200 nm. The peak wavelength of this light may be 172 nm.

[0099] The upper surface of the light irradiation unit 403 is disposed at a position slightly higher than the upper surface of the rotary chuck 421 in the vertical direction. Thereby, after the substrate holding unit 405 receives the substrate W, the window portion 432 can be brought close to the organic layer WL of the substrate W without adjusting the position of the substrate holding unit 405 in the height direction.

[0100] The light irradiation unit 403 has a gas ejection port 433. The gas ejection port 433 has a slit shape extending in the Y direction. The gas ejection port 433 is provided in front of the window portion 432. The gas ejection port 433 extends obliquely upward and rearward and opens on the upper surface of the light irradiation unit 403. The length of the gas ejection port 433 in the Y direction is longer than the length of the window portion 432 in the Y direction.

[0101] The downstream end of the pipe 434 is connected to the light irradiation unit 403. The upstream end of the pipe 434 is connected to a nitrogen gas source 436 via a flow regulator 435. The flow regulator 435 includes, for example, a valve and / or a mass flow controller, and regulates the flow rate of the nitrogen gas supplied to the downstream of the pipe 434.

[0102] The nitrogen gas supplied to the pipe 434 is ejected from the gas ejection port 433. When the organic layer WL of the substrate W is irradiated with light, the nitrogen gas forms an air flow flowing laterally along the lower surface in the organic layer WL. Thereby, when the organic layer WL of the substrate W is irradiated with light, the oxygen concentration is reduced.

[0103] A plate 437 is provided in the housing 411. The plate 437 extends horizontally from the upper edge on the rear side of the light irradiation unit 403 toward the rear side wall of the housing 411. The rear side wall of the housing 411 provides an exhaust port 441. The exhaust port 441 opens toward the space above the plate 437. On the rear side wall of the housing 411, an exhaust flow path forming portion 442, 443, and 444 are mounted from the outside. The exhaust port 441 is connected to an exhaust flow path formed by the exhaust flow path forming portion 442. The nitrogen gas ejected from the gas ejection port 433 is guided rearward along the plate 437 and discharged from the exhaust port 441.

[0104] The removing device 400 further includes a power supply 445. The power supply 445 is provided in a region extending from the center in the Y direction of the lower space 416 to the rear side. The power supply 445 is connected to the ultraviolet lamp 431 via a cable 446. The ultraviolet lamp 431 emits light by the power supply from the power supply 445. The removing device 400 includes a fan 449 for cooling the power supply 445. The fan 449 is provided behind the power supply 445. The air flow generated by the fan 449 flows into the exhaust flow path of the exhaust flow path forming portion 443.

[0105] In addition, the rear side wall of the housing 411 provides an exhaust port 447. The exhaust port 447 is connected to the exhaust flow path of the exhaust flow path forming portion 444. Particles generated from each part located in the lower space 416 of the substrate holding unit 405 are removed along the exhaust flow toward the exhaust port 447. Further, the plate 414 provides a slit 417 that communicates the upper space 415 and the lower space 416. The gas and / or particles in the upper space 415 are discharged from the exhaust port 447 via the slit 417.

[0106] The substrate holding unit 405 includes a moving mechanism 451 and a substrate transfer unit 406. The moving mechanism 451 is disposed in the lower space 416. The substrate transfer unit 406 is disposed in the upper space 415. The moving mechanism 451 is configured to move the substrate transfer unit 406 along the X direction and to raise and lower it.

[0107] The moving mechanism 451 includes a slider 453, a lifting mechanism 454, and a horizontal moving mechanism 455. The horizontal moving mechanism 455 extends relatively long in the X direction in the lower space 416 and is disposed in front of the power supply 445. The horizontal moving mechanism 455 includes a ball screw and a guide rail connected to the slider 453, and a motor. The slider 453 moves in the X direction by the rotation of the ball screw based on the motor.

[0108] The lifting mechanism 454 is disposed on the slider 453. The lifting mechanism 454 includes a motor 457 and a support portion 458. The support portion 458 includes a ball screw and a guide rail extending in the vertical direction. The support portion 458 extends from the lower space 416 through the slit 417 into the upper space 415. The substrate transfer unit 406 is connected to the support portion 458 in the upper space 415.

[0109] The substrate transfer unit 406 includes a moving plate 461 and a holding ring 463. The moving plate 461 is a horizontal plate formed in a square shape. The moving plate 461 provides a circular opening 462. The ball screw and the guide rail of the support portion 458 constituting the moving mechanism 451 are connected to the moving plate 461 outside the opening 462. The substrate transfer unit 406 is raised and lowered along the guide rail by the rotation of the ball screw based on the motor 457.

[0110] The substrate transfer unit 406 further includes a holding ring 463. The holding ring 463 is supported by the inner peripheral edge of the moving plate 461 that divides the opening 462. The thickness of the holding ring 463 is greater than the thickness of the inner peripheral edge of the moving plate 461. A circular region 464 is defined inside the holding ring 463. The substrate W is disposed within the circular region 464. A plurality of substrate holding portions 471 are mounted on the holding ring 463. The plurality of substrate holding portions 471 support the substrate W disposed within the circular region 464 and placed thereon. The inner peripheral surface 465 of the holding ring 463 faces the side surface of the substrate W disposed within the circular region 464. The holding ring 463 surrounds the substrate W in a manner that restricts the position of the edge of the substrate W, preventing the substrate W from detaching from and falling off the substrate transfer unit 406.

[0111] The position of the center of the circular region 464 in the Y direction coincides with the position of the center of the rotary chuck 421 in the Y direction. The substrate transfer unit 406 moves in the X direction by the moving mechanism 451 between the position where the center of the circular region 464 overlaps with the center of the rotary chuck 421 (sometimes this position is referred to as the "handover position") and the position where the center of the circular region 464 is disposed rearward of the window portion 432.

[0112] The substrate transfer unit 406 further includes a plurality of light shielding plates 466. The plurality of light shielding plates 466 extend from a plurality of (for example, four) regions separated from each other in the circumferential direction at the lower end of the inner circumferential surface 465 of the holding ring 463 toward the center side of the circular region 464. The plurality of light shielding plates 466 extend below the substrate W disposed in the circular region 464. The plurality of light shielding plates 466 inhibit light from reaching the upper surface side of the substrate W and O3 gas generated by irradiating light to the organic layer WL from reaching the upper surface of the substrate W. The plurality of light shielding plates 466 are close to each other and extend in the circumferential direction in such a manner that an aggregate thereof substantially forms an annular plate.

[0113] At the front end of each of the plurality of substrate holding portions 471, a circular pad 472 is provided at its upper part. The pad 472 provides a suction port 473. The suction port 473 is connected to the exhaust source 420 via the pipe 474 and the valve V42. In a state where the valve V42 is closed, the substrate W is sucked to the suction port 473 and held by the pad 472.

[0114] The holding ring 463 provides an annular flow path 483 inside thereof. The annular flow path 483 is connected to the gas source 436 of nitrogen via the flow regulator 484 and the pipe 485. The holding ring 463 also provides a plurality of gas flow paths 486. Each of the plurality of gas flow paths 486 extends from the annular flow path 483 to the inner peripheral edge of the holding ring 463 and provides a gas ejection port 487 at the inner peripheral edge. Nitrogen gas ejected from each of the gas ejection ports 487 of the plurality of gas flow paths 486 flows downward through the gap between the substrate W and each of the plurality of light shielding plates 466. Thereby, the flow of O3 gas from below the substrate W toward the upper surface of the substrate W is inhibited.

[0115] The removing device 400 further includes a control unit 500. The control unit 500 is constituted by a computer, for example, and a program is stored in its storage unit. A set of program instructions is incorporated in this program so that a series of operations in the removing device 400 can be implemented. The control unit 500 sends control signals to each part of the removing device 400 by executing this program. Thereby, each part of the removing device 400 is controlled. In addition, the above-mentioned control unit 2 may also serve as the control unit 500.

[0116] According to such a removing device 400, the organic layer WL can be removed by irradiating light to the organic layer WL formed on the back surface Wr of the substrate W.

[0117] Referring again to Figure 8 . In each process of the method MTA, each part of the substrate processing system PS can be controlled by the control unit CU. As Figure 8 shown, in addition to the above-mentioned processes STa, STb, and STc, the method MTA further includes processes STd, STe, and STf.

[0118] Process STd is performed before process STa. In process STd, an organic layer WL is formed. The organic layer WL is formed using a film forming apparatus 200. That is, the organic layer WL is formed in a device different from a substrate processing device such as the plasma processing device 1 that processes the substrate W in process STc.

[0119] As described above, the organic layer WL can be formed on the entire back surface Wr. Alternatively, the organic layer WL can be locally formed on the back surface Wr. When forming the organic layer WL using the film forming apparatus 200, the organic layer WL is locally formed on the back surface Wr by masking the regions in the back surface Wr where the organic layer WL is not to be formed. Alternatively, after forming the organic layer WL on the back surface Wr using the film forming apparatus 200, the organic layer WL can be locally removed from the back surface Wr using a removing device such as the removing device 400.

[0120] As described above, the organic layer WL can be formed in the central region of the back surface Wr or in the outer region of the back surface Wr. The organic layer WL may not be formed in a plurality of regions Wp. The plurality of regions Wp are masked by contacting a plurality of clearance pins 223 when forming the organic layer WL in the film forming apparatus 200. The organic layer WL may not be formed in the region within the back surface Wr that contacts the picker of a conveying device (e.g., various conveying robots) when conveying the substrate W.

[0121] Process STe is performed after process STd and before process STa. In process STe, the substrate W is conveyed into the chamber 10. That is, the substrate W having the organic layer WL is conveyed into the chamber of a substrate processing device such as the plasma processing device 1 that processes the substrate W in process STc. Figure 9 In the substrate processing system PS illustrated in, when any one of the processing modules PM1 to PM6 is used in process STc, the substrate W is conveyed into the chamber via the conveying robot TR3 and the conveying robot TR1. Figure 9 In the substrate processing system PS illustrated in, when any one of the processing modules PM7 to PM12 is used in process STc, the substrate W is conveyed into the chamber via the conveying robot TR3, the conveying robot TR1, and the conveying robot TR2.

[0122] The subsequent processes STa to STc are performed in a substrate processing apparatus such as the plasma processing apparatus 1 that processes the substrate W. Then, the substrate W is transferred to the removing apparatus 400. Then, process STf is performed. Process STf is performed using the removing apparatus 400. In process STf, the organic layer WL is removed by irradiating light on the organic layer WL within the removing apparatus 400.

[0123] In addition, the film forming apparatus 200 and / or the removing apparatus 400 may be connected to the chamber of the transfer module TM1 or TM2. Alternatively, the film forming apparatus 200 and / or the removing apparatus 400 may be connected to the chamber of the loading module LM instead of being connected to the aligner AN or the storage SR. Alternatively, the film forming apparatus 200 and / or the removing apparatus 400 may be provided in the aligner AN or the storage SR. Alternatively, the film forming apparatus 200 and / or the removing apparatus 400 may be connected to the chamber of the transfer module TM1 or the chamber of TM2 instead of being connected to the processing modules other than the processing module used in process STc among the processing modules PM1 to PM12. Alternatively, the film forming apparatus 200 and / or the removing apparatus 400 may be provided within the chamber of the processing module used in process STc among the processing modules PM1 to PM12.

[0124] Hereinafter, with reference to Figure 12 , another exemplary embodiment will be described. Figure 12 is a flowchart of a substrate processing method according to another exemplary embodiment. Hereinafter, the Figure 12 substrate processing method shown (hereinafter referred to as "method MTB") will be described from the viewpoint of differences from method MTA. Method MTB is performed in a substrate processing system.

[0125] Figure 13 is a diagram showing a substrate processing apparatus according to another exemplary embodiment. Figure 13 The substrate processing apparatus PSB shown can be used in method MTB. The substrate processing apparatus PSB is a substrate processing system that includes a coating and developing apparatus CD, an exposure apparatus EA, and a substrate processing system PS.

[0126] The substrate processing apparatus PSB may further include a transfer path RO and a transfer device TD. The transfer device TD is configured to move along the transfer path RO to transfer the cassette CST. The transfer device TD may be an overhead traveling vehicle such as an Overhead Hoist Transport. The transfer device TD transfers the cassette CST to the coating and developing apparatus CD and transfers the cassette CST to any one of the loading ports LP1 to LP4 of the substrate processing system PS.

[0127] The coating and developing apparatus CD is configured to receive the substrate W in the cassette CST into its interior and coat a photoresist on the upper surface of the substrate W. The coating and developing apparatus CD is connected to the exposure apparatus EA via the interface IF. The exposure apparatus EA is configured to expose the photoresist of the substrate W. The coating and developing apparatus CD is configured to develop the photoresist of the substrate W that has been exposed in the exposure apparatus EA.

[0128] As Figure 13 shown, the substrate processing apparatus PSB further includes the above-described film forming apparatus 200 and removing apparatus 400. Figure 13 In the example shown, the film forming apparatus 200 and the removing apparatus 400 are provided inside the coating and developing apparatus CD, rather than inside the substrate processing system PS. Additionally, the film forming apparatus 200 and / or the removing apparatus 400 may be provided inside the exposure apparatus EA.

[0129] The substrate processing apparatus PSB further includes a control unit CUB. The control unit CUB is, for example, a computer. The control unit CUB includes a CPU (Central Processing Unit), a RAM (Random Access Memory), a ROM (Read Only Memory), an auxiliary storage device, and the like. The CPU operates according to a program stored in the ROM or the auxiliary storage device and controls each part of the substrate processing apparatus PSB. Additionally, the control unit 2 may also serve as the control unit CUB.

[0130] Referring again to Figure 12 . In each step of the method MTB, each part of the substrate processing system PS can be controlled by the control unit CUB. As Figure 12 shown, in addition to steps STa to STf, the method MTB further includes steps STg to STi.

[0131] Step STg can be performed before step STd. In step STg, a photoresist is coated on the upper surface of the substrate W. The photoresist is coated on the upper surface of the substrate W in the coating and developing apparatus CD.

[0132] Next, as described above in connection with the method MTA, in step STd, the organic layer WL is formed on the back surface Wr of the substrate W in the film forming apparatus 200. Additionally, step STd can be performed before step STg.

[0133] Next, step STh is performed. In step STh, the photoresist of the substrate W is exposed. The photoresist is exposed in the exposure apparatus EA. Additionally, step STh can be performed before step STd.

[0134] Next, process STi is performed. In process STi, the photoresist is developed. The photoresist is developed in the coating and developing apparatus CD. Additionally, process STi can be performed before process STd.

[0135] Next, the substrate W is transferred by the transfer device TD to any one of the load ports LP1 to LP4 of the substrate processing system PS. Then, in process STe, the substrate W is transferred into the chamber of the processing module, which is a substrate processing device such as the plasma processing device 1 used in process STc, among the processing modules PM1 to PM12. Then, processes STa to STc are performed in this processing module. Then, the substrate W is transferred to the removing device 400. Then, in process STf, the organic layer WL is removed in the removing device 400.

[0136] Hereinafter, referring to Figure 14 . Figure 14 is a diagram showing a substrate processing apparatus according to yet another exemplary embodiment. The method MTB can be performed in Figure 14 the substrate processing apparatus PSB (or substrate processing system) shown. As Figure 14 shown, the film forming apparatus 200 and / or the removing device 400 can be separated from the coating and developing apparatus CD, the exposure apparatus EA, and the substrate processing system PS, and can be configured to receive the substrate W from the cassette CST transferred by the transfer device TD. Alternatively, as described above, the film forming apparatus 200 and / or the removing device 400 can be provided within the substrate processing system PS. Alternatively, the film forming apparatus 200 can be provided within the coating and developing apparatus CD, and the removing device 400 can be provided within the substrate processing system PS. Alternatively, the film forming apparatus 200 can be provided within the coating and developing apparatus CD, and the removing device 400 can be configured to be separated from the coating and developing apparatus CD, the exposure apparatus EA, and the substrate processing system PS, and receive the substrate W from the cassette CST transferred by the transfer device TD.

[0137] Hereinafter, referring to Figure 15 . Figure 15 is a cross-sectional view showing a substrate support portion according to another exemplary embodiment. The plasma processing device 1 used in process STc can include Figure 15 the substrate support portion 11A shown in place of the substrate support portion 11. Hereinafter, the substrate support portion 11A will be described from the viewpoint of differences from the substrate support portion 11.

[0138] In addition to the electrostatic electrode 1111b, the electrostatic chuck 1111 of the substrate support portion 11A includes an electrostatic electrode 1111e. The electrostatic electrode 1111e extends away from the electrostatic electrode 1111b in the ceramic member 1111a and surrounds the electrostatic electrode 1111b. The electrostatic electrode 1111b is disposed below the central portion of the substrate W placed on the substrate support surface 1111c. The electrostatic electrode 1111e is disposed below the outer portion (e.g., the edge region) of the substrate W relative to the central portion on the substrate support surface 1111c. The electrostatic electrode 1111b may have a circular shape, and the electrostatic electrode 1111e may have an annular shape. A DC power supply 116 is connected to the electrostatic electrode 1111e via a switch.

[0139] When using the substrate support portion 11A, in process STb, after holding the central portion of the substrate W, the outer portion (e.g., the edge region) of the substrate W can be held. That is, in process STb, after the voltage from the DC power supply 114 is applied to the electrostatic electrode 1111b, the voltage from the DC power supply 116 can be applied to the electrostatic electrode 1111e. According to the holding of the substrate W in this process STb, the friction between the substrate W and the substrate support surface 1111c can be suppressed.

[0140] As described above, various exemplary embodiments have been described, but are not limited to the above-described exemplary embodiments, and various additions, omissions, substitutions, and changes can be made. Also, elements in different embodiments can be combined to form other embodiments.

[0141] For example, in processes STa to STc, a substrate processing apparatus other than the plasma processing apparatus 1 can be used. Also, the processing of the substrate W performed in process STc can be a plasma processing different from plasma etching or a substrate processing. Also, the methods MTA and MTB may not include process STf.

[0142] Here, various exemplary embodiments included in the present invention are described in [E1] to [E19] below.

[0143] [E1]

[0144] A substrate processing method, comprising the following processes:

[0145] Placing a substrate on an electrostatic chuck of a substrate support portion of a substrate processing apparatus, the electrostatic chuck having a substrate support surface, the substrate including a back surface and an organic layer pre-formed on the back surface, and placing the substrate on the electrostatic chuck in such a manner that the organic layer contacts the substrate support surface;

[0146] Holding the substrate by electrostatic adsorption based on the electrostatic chuck; and

[0147] The substrate is processed in the substrate processing apparatus.

[0148] [E2]

[0149] The substrate processing method according to E1, wherein

[0150] the organic layer has a coefficient of friction lower than that of the back surface of the substrate.

[0151] [E3]

[0152] The substrate processing method according to E1 or E2, wherein

[0153] the substrate support portion has a gas supply port for supplying a heat transfer gas to the gap between the substrate and the electrostatic chuck.

[0154] [E4]

[0155] The substrate processing method according to any one of E1 to E3, further comprising the following steps:

[0156] forming the organic layer on the back surface of the substrate in a film forming apparatus, the film forming apparatus being a different apparatus from the substrate processing apparatus including a chamber and the substrate support portion provided in the chamber; and

[0157] after the step of forming the organic layer and before the step of loading the substrate, transporting the substrate into the chamber of the substrate processing apparatus.

[0158] [E5]

[0159] The substrate processing method according to E4, wherein

[0160] the film forming apparatus is provided in a coating and developing apparatus or an exposure apparatus for lithography of the substrate.

[0161] [E6]

[0162] The substrate processing method according to E5, wherein

[0163] the organic layer is formed before exposing a photoresist formed on the substrate using the exposure apparatus.

[0164] [E7]

[0165] The substrate processing method according to any one of E1 to E6, wherein

[0166] the organic layer contains silicon and carbon.

[0167] [E8]

[0168] The substrate processing method according to any one of E1 to E7, wherein,

[0169] The film-forming gas for forming the organic layer substitutes the silanol group on the back surface of the substrate with a carbon-containing hydrophobic group.

[0170] [E9]

[0171] The substrate processing method according to any one of E1 to E8, wherein,

[0172] The organic layer is a monolayer.

[0173] [E10]

[0174] The substrate processing method according to any one of E1 to E9, wherein,

[0175] In the process of holding the substrate, after holding the central portion of the substrate by the electrostatic chuck, the portion of the substrate that is more outward than the central portion is held by the electrostatic chuck.

[0176] [E11]

[0177] The substrate processing method according to any one of E1 to E10, wherein,

[0178] The substrate processing apparatus further includes a support body configured to be movable up and down relative to the substrate support surface and to support the substrate at a position separated upward from the substrate support surface,

[0179] The organic layer is formed in a region of the back surface of the substrate other than the region where the support body abuts.

[0180] [E12]

[0181] The substrate processing method according to any one of E1 to E11, wherein,

[0182] In the process of processing the substrate, plasma processing of the substrate is performed.

[0183] [E13]

[0184] A substrate processing apparatus, comprising:

[0185] A cavity;

[0186] A substrate support portion provided in the cavity and including an electrostatic chuck having a substrate support surface; and

[0187] A control portion,

[0188] The control portion is configured to execute the following processes:

[0189] Place the substrate on the electrostatic chuck, where the substrate includes a back surface and an organic layer pre-formed on the back surface, and place it on the electrostatic chuck in such a way that the organic layer contacts the substrate support surface; and

[0190] Hold the substrate by electrostatic adsorption based on the electrostatic chuck; and

[0191] Process the substrate in the cavity.

[0192] [E14]

[0193] A substrate processing system includes:

[0194] A plasma processing device, which is the substrate processing device described in E13;

[0195] A film forming device configured to form the organic layer; and

[0196] A removing device configured to remove the organic layer.

[0197] [E15]

[0198] A substrate processing system includes:

[0199] The substrate processing device described in E13; and

[0200] A film forming device configured to form the organic layer,

[0201] The film forming device includes:

[0202] A film forming cavity;

[0203] A support configured to support the substrate in the film forming cavity;

[0204] A first gas supply port disposed at a position facing the center of the upper surface of the substrate supported by the support of the film forming device, and configured to supply an inert gas toward the center of the upper surface;

[0205] A second gas supply port disposed at a position facing the edge region of the upper surface of the substrate supported by the support of the film forming device, and configured to supply an inert gas toward the edge region;

[0206] A third gas supply port disposed at a position facing the back surface of the substrate supported by the support of the film forming device, and configured to supply a film forming gas for forming the organic layer on the back surface; and

[0207] An exhaust port disposed outside relative to the edge of the substrate to exhaust the gas in the film forming cavity.

[0208] [E16]

[0209] The substrate processing system according to E15, wherein,

[0210] the substrate processing system further includes a removing device configured to remove the organic layer after the step of processing the substrate.

[0211] [E17]

[0212] The substrate processing system according to E16, wherein,

[0213] the control unit is configured to perform the following steps:

[0214] form the organic layer on the back surface of the substrate in the film forming device;

[0215] then, transfer the substrate to the substrate processing device;

[0216] then, hold the substrate by the electrostatic chuck;

[0217] then, process the substrate in the substrate processing device; and

[0218] then, remove the organic layer in the removing device.

[0219] [E18]

[0220] The substrate processing system according to E16, further comprising:

[0221] a coating and developing device configured to perform coating and developing of a photoresist; and

[0222] an exposure device configured to expose the photoresist,

[0223] the control unit is configured to perform the following steps:

[0224] form the organic layer on the back surface of the substrate in the film forming device;

[0225] then, expose the photoresist in the exposure device;

[0226] then, develop the photoresist in the coating and developing device;

[0227] then, transfer the substrate to the substrate processing device;

[0228] then, hold the substrate by the electrostatic chuck;

[0229] Next, the substrate is processed in the substrate processing apparatus; and

[0230] Next, the organic layer is removed in the removing apparatus.

[0231] [E19]

[0232] The substrate processing system according to E17 or E18, wherein

[0233] The substrate processing apparatus is an etching apparatus configured to etch the substrate.

[0234] [E20]

[0235] The substrate processing system according to any one of E17 to E19 further includes:

[0236] A loading module configured to transfer the substrate between a cassette that houses the substrate therein and a load lock module that provides a pre-vacuum chamber; and

[0237] A transfer module configured to provide a depressurized space between the load lock module and the substrate processing apparatus and transfer the substrate through this space,

[0238] The film formation chamber of the film formation apparatus is connected to the loading module or the transfer module.

[0239] It can be understood from the above description that various embodiments of the present invention have been described for illustrative purposes in this specification, and various changes can be made without departing from the scope and gist of the present invention. Therefore, the various embodiments disclosed in this specification are not intended to be restrictive, and the true scope and gist are represented by the appended claims.

[0240] Symbolic description

[0241] 1 - Plasma processing apparatus, 2 - Control unit, 10 - Chamber, 11 - Substrate support portion, 1111 - Electrostatic chuck, PS - Substrate processing system, 200 - Film formation apparatus, 400 - Removing apparatus.

Claims

1. A substrate processing method, which includes the following steps: Placing a substrate on an electrostatic chuck of a substrate support portion of a substrate processing apparatus, the electrostatic chuck having a substrate support surface, the substrate including a back surface and an organic layer pre-formed on the back surface, and placing the substrate on the electrostatic chuck in such a manner that the organic layer contacts the substrate support surface; Holding the substrate by electrostatic adsorption based on the electrostatic chuck; and Processing the substrate in the substrate processing apparatus.

2. The substrate processing method according to claim 1, wherein The organic layer has a coefficient of friction lower than that of the back surface of the substrate.

3. The substrate processing method according to claim 1, wherein The substrate support portion has a gas supply port for supplying a heat transfer gas to a gap between the substrate and the electrostatic chuck.

4. The substrate processing method according to any one of claims 1 to 3, which further includes the following steps: Forming the organic layer on the back surface of the substrate in a film forming apparatus, the film forming apparatus being a different apparatus from the substrate processing apparatus including a chamber and the substrate support portion provided in the chamber; and After the step of forming the organic layer and before the step of placing the substrate, transporting the substrate into the chamber of the substrate processing apparatus.

5. The substrate processing method according to claim 4, wherein The film forming apparatus is provided in a coating and developing apparatus or an exposure apparatus for lithography of the substrate.

6. The substrate processing method according to claim 5, wherein The organic layer is formed before exposing a photoresist formed on the substrate using the exposure apparatus.

7. The substrate processing method according to any one of claims 1 to 3, wherein The organic layer contains silicon and carbon.

8. The substrate processing method according to any one of claims 1 to 3, wherein The film forming gas for forming the organic layer replaces a silanol group on the back surface of the substrate with a carbon-containing hydrophobic group.

9. The substrate processing method according to any one of claims 1 to 3, wherein The organic layer is a monolayer.

10. The substrate processing method according to any one of claims 1 to 3, wherein In the step of holding the substrate, after holding the central portion of the substrate by the electrostatic chuck, holding the portion of the substrate that is more outward than the central portion by the electrostatic chuck.

11. The substrate processing method according to any one of claims 1 to 3, wherein The substrate processing apparatus further includes a support body configured to be movable up and down relative to the substrate support surface and to support the substrate at a position separated upward from the substrate support surface, The organic layer is formed in a region of the back surface of the substrate other than a region where the support body abuts.

12. The substrate processing method according to any one of claims 1 to 3, wherein In the step of processing the substrate, plasma processing of the substrate is performed.

13. A substrate processing apparatus, which includes: A chamber; A substrate support portion provided in a cavity and including an electrostatic chuck having a substrate support surface; and A control unit, The control unit is configured to perform the following processes: Place the substrate on the electrostatic chuck, the substrate including a back surface and an organic layer pre-formed on the back surface, and place it on the electrostatic chuck in such a manner that the organic layer contacts the substrate support surface; and Hold the substrate by electrostatic adsorption based on the electrostatic chuck; and Process the substrate in the cavity.

14. A substrate processing system, comprising: A plasma processing device, which is the substrate processing device according to claim 13; A film forming device configured to form the organic layer; and A removing device configured to remove the organic layer.

15. A substrate processing system, comprising: The substrate processing device according to claim 13; and A film forming device configured to form the organic layer, The film forming device includes: A film forming cavity; A support configured to support the substrate in the film forming cavity; A first gas supply port provided at a position facing the center of the upper surface of the substrate supported by the support of the film forming device, and configured to be able to supply an inert gas toward the center of the upper surface; A second gas supply port provided at a position facing the edge region of the upper surface of the substrate supported by the support of the film forming device, and configured to be able to supply an inert gas toward the edge region; A third gas supply port provided at a position facing the back surface of the substrate supported by the support of the film forming device, and configured to be able to supply a film forming gas for forming the organic layer on the back surface; and An exhaust port provided outside with respect to the edge of the substrate to exhaust the gas in the film forming cavity.

16. The substrate processing system according to claim 15, wherein The substrate processing system further includes a removing device configured to remove the organic layer after the process of processing the substrate.

17. The substrate processing system according to claim 16, wherein The control unit is configured to perform the following processes: Form the organic layer on the back surface of the substrate in the film forming device; Next, transfer the substrate to the substrate processing device; Next, hold the substrate by the electrostatic chuck; Next, process the substrate in the substrate processing device; And Next, remove the organic layer in the removing device.

18. The substrate processing system according to claim 16, further comprising: A coating and developing device configured to perform coating and development of a photoresist; and An exposure device configured to expose the photoresist, The control unit is configured to perform the following processes: Form the organic layer on the back surface of the substrate in the film forming device; Next, expose the photoresist in the exposure device; Next, develop the photoresist in the coating and developing device; Next, transfer the substrate to the substrate processing device; Next, hold the substrate by the electrostatic chuck; Next, the substrate is processed in the substrate processing apparatus; and Next, the organic layer is removed in the removing apparatus.

19. The substrate processing system according to claim 17 or 18, wherein the substrate processing apparatus is an etching apparatus configured to etch the substrate.

20. The substrate processing system according to claim 17 or 18, further comprising: a loading module configured to transfer the substrate between a cassette that houses the substrate therein and a load lock module that provides a pre-vacuum chamber; and a transfer module configured to provide a decompressed space between the load lock module and the substrate processing apparatus and transfer the substrate through the space, the film forming chamber of the film forming apparatus is connected to the loading module or the transfer module.

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