Method and system for calculating interface thermal conductivity of graphene / copper composite material and medium

Abstract

The invention discloses a method, a system and a medium for calculating the interface thermal conductivity of a graphene / copper composite material, mainly relates to the technical field of interface thermal conductivity, and aims to solve the problem that an optimal graphene / copper composite material cannot be provided due to the fact that the interface thermal conductivity of the graphene / copper composite material cannot be calculated based on phonon-electron coupling in an existing scheme. Comprising the steps that the coupling degree between phonons and electrons is obtained through a phonon and electron coupling formula and basic parameters of a current graphene / copper composite material, and then a dual-temperature model containing the coupling degree between the phonons and electrons is constructed in simulation software; simulating the interface structure model by using the simulation parameters through the simulation software containing the double-temperature model to obtain the interface thermal conductivity of the graphene / copper composite material to be detected; and determining the graphene / copper composite material with the structure corresponding to the maximum value in the interface thermal conductance as the optimal graphene / copper composite material.

Description

Technical Field

[0001] This application relates to the technical field of interfacial thermal conductivity, and particularly to a method, system and medium for calculating the interfacial thermal conductivity of graphene / copper composites. Background Art

[0002] At present, microelectronic devices are continuously developing towards nano-scale miniaturization and three-dimensional heterogeneous integration. In this process, the power density shows an exponential growth trend. This has led to the thermal flux of electronic devices exceeding the order of 1000 W / cm². On the development path of thermal packaging technology, the problems of device performance degradation and service life shortening caused by thermal effects have become the primary restrictive factors and failure modes. In this context, graphene / copper composites, as a new generation of thermal interface materials, can significantly improve the thermal conductivity of composites by adding high-thermal-conductivity materials such as graphene into the metal matrix, making them have important application value in the field of electronic device packaging.

[0003] Although the current preparation technology has improved the thermal conductivity of the composites to a certain extent, there is still a significant gap compared with the theoretical expected value. Understanding the thermal conduction mechanism of graphene / copper composites is the core prerequisite for promoting material design and process optimization. However, the current understanding of the thermal conduction mechanism of copper / graphene composites is still in its infancy. Most existing studies only start from the dimension of phonon conduction and generally fail to fully consider the important role of electrons in the copper matrix during the thermal conduction process, which makes it difficult to deeply analyze the actual contribution of phonon-electron coupling in the composites to the overall thermal conduction.

[0004] Therefore, there is an urgent need for a method, system and medium for calculating the interfacial thermal conductivity of graphene / copper composites to solve the problem that the existing solutions cannot calculate the interfacial thermal conductivity of graphene / copper composites based on phonon-electron coupling, and thus cannot provide the optimal graphene / copper composites. Summary of the Invention

[0005] This application provides a method, system and medium for calculating the interfacial thermal conductivity of graphene / copper composites to solve the problem that the existing solutions cannot calculate the interfacial thermal conductivity of graphene / copper composites based on phonon-electron coupling, and thus cannot provide the optimal graphene / copper composites.

[0006] In a first aspect, this application provides a method for calculating the interfacial thermal conductivity of graphene / copper composites, the method comprising: Establishing an interfacial structure model of the graphene / copper composites to be detected with different structures; obtaining simulation parameters that conform to the properties of the current graphene / copper composites; Obtaining the coupling degree between phonons and electrons through the phonon-electron coupling formula and the basic parameters of the current graphene / copper composites, and then constructing a two-temperature model including the coupling degree between phonons and electrons in the simulation software; The simulation software incorporating the two - temperature model utilizes simulation parameters to simulate the interface structure model and obtain the interfacial thermal conductivity of the graphene / copper composite material to be detected. Determine that the graphene / copper composite material corresponding to the maximum value in the interfacial thermal conductivity is the optimal graphene / copper composite material.

[0007] In one implementation manner of the present application, the graphene / copper composite materials to be detected with different structures include graphene / copper composite materials with different lengths, graphene / copper composite materials with different copper crystal planes, and graphene / copper composite materials with different defect concentrations; among them, the defects corresponding to the defect concentration at least include: Stone Wales defect, single - vacancy defect, double - vacancy V2555777 defect, double - vacancy V2585 defect.

[0008] In one implementation manner of the present application, establishing the interface structure model of the graphene / copper composite materials to be detected with different structures specifically includes: Create the interface structure model of the graphene / copper composite materials to be detected with different structures in MaTerials Studio

[0009] In one implementation manner of the present application, through the phonon - electron coupling formula and the basic parameters of the current graphene / copper composite material, obtain the coupling degree between phonons and electrons, and then construct a two - temperature model including the coupling degree between phonons and electrons in the simulation software, specifically including: Through the phonon - electron coupling formula: , calculate to obtain the coupling degree between phonons and electrons ; Among them, the parameters of the graphene / copper composite material with the current defect concentration to be detected include: electronic specific heat , electron density , electronic thermal conductivity , phonon temperature , electron temperature , electron temperature gradient , laser heat source S(x,t); Construct a two - temperature model including the coupling degree between phonons and electrons in the simulation software.

[0010] In one implementation manner of the present application, the simulation software incorporating the two - temperature model utilizes simulation parameters to simulate the interface structure model and obtain the interfacial thermal conductivity of the graphene / copper composite material to be detected, specifically including: The simulation software incorporating the two - temperature model utilizes simulation parameters to simulate the interface structure model and obtain the accumulated energy q, temperature gradient and cross - sectional area A of the graphene / copper composite material to be detected. Through the formula: , the interfacial thermal conductance is calculated .

[0011] In an implementation manner of the present application, obtaining simulation parameters that conform to the properties of the current graphene / copper composite material specifically includes: Obtaining simulation parameters through a preset interface.

[0012] In a second aspect, the present application provides a system for calculating the interfacial thermal conductance of a graphene / copper composite material, the system includes: A building module, configured to build an interfacial structure model of the graphene / copper composite material to be detected with different structures; obtain simulation parameters that conform to the properties of the current graphene / copper composite material; A two-temperature module, configured to obtain the coupling degree between phonons and electrons through the phonon-electron coupling formula and the basic parameters of the current graphene / copper composite material, and then construct a two-temperature model including the coupling degree between phonons and electrons in simulation software; An obtaining module, configured to simulate the interfacial structure model by using the simulation parameters through the simulation software including the two-temperature model, and obtain the interfacial thermal conductance of the graphene / copper composite material to be detected; A determining module, configured to determine that the graphene / copper composite material corresponding to the maximum value in the interfacial thermal conductance is the optimal graphene / copper composite material.

[0013] In an implementation manner of the present application, the two-temperature module includes a two-temperature unit, configured to calculate and obtain the coupling degree between phonons and electrons through the phonon-electron coupling formula: , ; wherein, the parameters of the graphene / copper composite material with the current defect concentration to be detected include: electronic specific heat capacity , electron density , electron thermal conductivity , phonon temperature , electron temperature , electron temperature gradient , laser heat source S(x,t); Construct a two-temperature model including the coupling degree between phonons and electrons in the simulation software.

[0014] In an implementation manner of the present application, the obtaining module includes an obtaining unit, configured to simulate the interfacial structure model by using the simulation parameters through the simulation software including the two-temperature model, and obtain the accumulated energy q, temperature gradient and cross-sectional area A of the graphene / copper composite material to be detected; Through the formula: , the interfacial thermal conductance is calculated .

[0015] In a third aspect, the present application provides a non - volatile computer storage medium, on which computer instructions are stored, and when the computer instructions are executed, a method for calculating the interfacial thermal conductance of a graphene / copper composite material as described in any one of the above is implemented.

[0016] A non - volatile computer storage medium, on which computer instructions are stored, and when the computer instructions are executed, a method for calculating the interfacial thermal conductance of a graphene / copper composite material as described in any one of the above is implemented.

[0017] From the above technical solutions, it can be seen that the present application has the following advantages: The present application studies the interfacial heat transport mechanism of composite materials based on non - equilibrium molecular dynamics simulation combined with the two - temperature model. While achieving accuracy comparable to that of first - principles, the present application can perform large - scale molecular dynamics simulations of the heat transport properties of different graphene / copper, obtain the effects of different crystal planes of copper and graphene defects on the thermal properties of the composite material, and guide the development of thermal packaging materials. By seeking the theoretical conditions for maximizing the heat transport of the graphene / copper thermal packaging material to be detected, considering the effects of electrons and phonons on heat transport through molecular dynamics simulation methods, and using multiple temperature control methods to simulate the effects of length, crystal plane, and graphene defects on graphene / copper, the present application solves the problem that existing solutions cannot calculate the interfacial thermal conductance of graphene / copper composite materials based on the phonon - electron coupling, and thus cannot provide the optimal graphene / copper composite material. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions of the present invention, the drawings required for description will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0019] Figure 1 is a flowchart of a method for calculating the interfacial thermal conductance of a graphene / copper composite material provided by an embodiment of the present application.

[0020] Figure 2 is a molecular dynamics simulation method model of a graphene / copper composite material provided by an embodiment of the present application.

[0021] Figure 3 is a schematic diagram of the change of a graphene / copper composite material with length provided by an embodiment of the present application.

[0022] Figure 4It is a schematic diagram showing the change of the interfacial thermal conductivity of a graphene / copper composite with the copper crystal plane provided by an embodiment of the present application.

[0023] Figure 5 It is a schematic diagram of graphene defects provided by an embodiment of the present application.

[0024] Figure 6 It is a schematic diagram showing the change of a graphene / copper composite with graphene defects provided by an embodiment of the present application.

[0025] Figure 7 It is a schematic diagram of the internal structure of a system for calculating the interfacial thermal conductivity of a graphene / copper composite provided by an embodiment of the present application. Detailed implementation manners

[0026] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0027] Those skilled in the art should understand that the embodiments described below are only the preferred embodiments of the present disclosure, and do not mean that the present disclosure can only be implemented through these preferred embodiments. These preferred embodiments are only used to explain the technical principles of the present disclosure and are not used to limit the protection scope of the present disclosure. All other embodiments obtained by those of ordinary skill in the art based on the preferred embodiments provided by the present disclosure without creative efforts should still fall within the protection scope of the present disclosure.

[0028] It should also be noted that the term "comprising", "including" or any other variation thereof is intended to cover a non-exclusive inclusion, so that a process, method, commodity or device including a series of elements not only includes those elements, but also includes other elements not explicitly listed, or further includes elements inherent to such a process, method, commodity or device. Without further limitations, the element defined by the statement "including one..." does not exclude the existence of other identical elements in the process, method, commodity or device including the element.

[0029] Next, the technical solutions proposed in the embodiments of the present application will be described in detail with reference to the accompanying drawings.

[0030] The embodiment provides a method for calculating the interfacial thermal conductivity of a graphene / copper composite. As Figure 1 shown, the method provided by the embodiment of the present application mainly includes the following steps: Step 110: Establish an interface structure model of graphene / copper composites to be detected with different structures; obtain simulation parameters that match the properties of the current graphene / copper composites.

[0031] It should be noted that the graphene / copper composites to be detected with different structures may include graphene / copper composites with different lengths, graphene / copper composites with different copper crystal planes, and graphene / copper composites with different defect concentrations; among them, the defects corresponding to the defect concentration at least include: Stone Wales defects, single vacancy defects, double vacancy V2555777 defects, and double vacancy V2585 defects.

[0032] In some embodiments, establishing an interface structure model of graphene / copper composites to be detected with different structures specifically includes: Create an interface structure model of the graphene / copper composites to be detected with different structures in MaTerials Studio.

[0033] In some embodiments, obtaining simulation parameters that match the properties of the current graphene / copper composites specifically includes: Obtain simulation parameters through a preset interface.

[0034] Step 120: Through the phonon-electron coupling formula and the basic parameters of the current graphene / copper composites, obtain the coupling degree between phonons and electrons, and then construct a two-temperature model including the coupling degree between phonons and electrons in the simulation software.

[0035] This step can be specifically: Through the phonon-electron coupling formula: , calculate to obtain the coupling degree between phonons and electrons ; Among them, the parameters of the graphene / copper composites with the current defect concentration to be detected include: electronic specific heat , electron density , electron thermal conductivity , phonon temperature , electron temperature , electron temperature gradient , laser heat source S(x,t); t is time, and x is the position in the laser propagation direction.

[0036] Construct a two-temperature model including the coupling degree between phonons and electrons in the simulation software.

[0037] Step 130: The simulation software including the two-temperature model uses the simulation parameters to simulate the interface structure model and obtain the interface thermal conductivity of the graphene / copper composites to be detected.

[0038] This step can be specifically: The simulation software incorporating the two - temperature model utilizes simulation parameters to simulate the interfacial structure model, obtaining the accumulated energy q, temperature gradient and cross - sectional area A of the graphene / copper composite material to be detected; Through the formula: , the interfacial thermal conductance is calculated .

[0039] Step 140: Determine that the graphene / copper composite material corresponding to the structure with the maximum value in the interfacial thermal conductance is the optimal graphene / copper composite material.

[0040] Based on the above description, as an example, when the graphene / copper composite materials to be detected with different structures are graphene / copper composite materials of different lengths, the above - mentioned simulation process can be as follows: Step 1.1: Establish a non - equilibrium molecular dynamics graphene / copper composite material model, and use MaTerialsStudio software to construct an Å - scale graphene / copper interfacial structure model (as shown in Figure 2 ), and conduct simulations in the simulation software.

[0041] Step 1.2: Input simulation parameters in the simulation software. At the same time, set the temperature to 300K and the time step to 0.5 fs. Adopt periodic boundary conditions. The ensembles are respectively the isothermal - isobaric ensemble (NPT), with a step size of 0.5 fs for a total of 0.5 ns; and the canonical ensemble (NVT), with a step size of 0.5 fs for a total of 0.5 ns.

[0042] Step 1.3: Set the hot end and the cold end, and layer the interfacial structure model along the z - axis, with a total of 50 layers. While maintaining the number of particles, volume, and energy of the system constant through the NVE ensemble, introduce the two - temperature model and set the interaction between electrons and phonons, mainly including parameters. Through the formula: , where, is the electron specific heat capacity, is the electron density, is the electron thermal conductivity, and are the phonon and electron temperatures respectively, is the electron temperature gradient, is the coupling degree between phonons and electrons, S(x,t) is the laser heat source, t is time, and x is the position in the laser propagation direction. Calculate the coupling degree between phonons and electrons through the above formula . To simulate related physical processes such as heat conduction. Calculate the accumulated energy and temperature gradient, and then calculate the interfacial thermal conductance.

[0043] As Figure 3 shown, the abscissa is the reciprocal of the length (unit: angstrom ), and the ordinate is the reciprocal of the interfacial thermal conductance, that is, the interfacial thermal resistance (unit: ). By converting the model length (different lengths to be detected) into the reciprocal of the length and converting the interfacial thermal conductance of different lengths calculated in combination with steps 1.1, 1.2, and 1.3 into the interfacial thermal resistance, Figure 3 is obtained, and then the interfacial thermal conductance of the composite material under infinite size is obtained by fitting with the least squares method (the interfacial thermal conductance is obtained by converting the interfacial thermal resistance).

[0044] Based on the above description, as an example 2, when the graphene / copper composite materials to be detected with different structures are graphene / copper composite materials with different copper crystal planes, the above simulation process can be as follows: It should be noted that several copper crystal planes to be detected can be copper(111), (110), (321), (410), (653) copper crystal planes.

[0045] As Figure 4 shown, different crystal planes (copper(111), (110), (321), (410), (653)) will correspond to different interfacial thermal conductances (unit: ). The specific obtaining process can be as follows: Step 2.1, create an interfacial structure model of copper(111), (110), (321), (410), (653) and graphene in MaTerials Studio, set the lengths of the heat source and the heat sink to 5 angstroms, and set the temperatures to 325 K and 275 K respectively; the interfacial structure model is optimized to obtain a stable crystal structure.

[0046] Step 2.2, introduce the two-temperature model, set the interaction between electrons and phonons, mainly including parameters, through the formula: , where is the electron specific heat capacity, is the electron density, is the electron thermal conductivity, and are the phonon and electron temperatures respectively, is the electron temperature gradient, is the coupling degree between phonons and electrons, S(x,t) is the laser heat source, t is the time, and x is the position in the laser propagation direction. The coupling degree between phonons and electrons is calculated through the above formula. On this basis, the interfacial thermal conductance between different crystal planes and graphene is obtained.

[0047] Based on the above description, as an example in Region 3, when the graphene / copper composite materials to be detected with different structures are graphene / copper composite materials with different defect concentrations, the above simulation process can be as follows: Step 3.1, construct Stone Wales (SW), single vacancy V1, double vacancy V2(555777), and double vacancy V2(585) defects in graphene through MaTerials Studio (the graphene defects are as Figure 5 shown, with the unit of angstrom). In MaTerials Studio, composite the defective graphene with copper into a sandwich structure (interface structure model). The lengths of the heat source and heat sink are both set to 5 angstroms, and the temperatures are 325 K and 275 K respectively; after the model is optimized, a stable structure is obtained.

[0048] Step 3.2, introduce the two-temperature model and set the interaction between electrons and phonons, mainly including parameter settings. Taking copper(111) / graphene as an example, through the formula: , where, is the electronic specific heat capacity, is the electron density, is the electronic thermal conductivity, and are the phonon and electron temperatures respectively, is the electron temperature gradient, is the coupling degree between phonons and electrons, S(x,t) is the laser heat source, t is the time, and x is the position in the laser propagation direction. The coupling degree between phonons and electrons is calculated through the above formula . On this basis, the interfacial thermal conductivity of different defective graphene and copper(111) is obtained (as Figure 6 shown, the graphene / copper composite material changes with the graphene defect).

[0049] In addition, this application Figure 7 provides a system for calculating the interfacial thermal conductivity of graphene / copper composite materials according to an embodiment of this application. As Figure 7 shown, the system provided by the embodiment of this application mainly includes: A building module 210, configured to build an interface structure model of graphene / copper composite materials to be detected with different structures; obtain simulation parameters that conform to the properties of the current graphene / copper composite materials; A two-temperature module 220, configured to obtain the coupling degree between phonons and electrons through the phonon-electron coupling formula and the basic parameters of the current graphene / copper composite materials, and then construct a two-temperature model including the coupling degree between phonons and electrons in the simulation software; The two-temperature module 220 includes a two-temperature unit, configured to pass through the phonon-electron coupling formula: , calculate the coupling degree between phonons and electrons ; Among them, the parameters of the graphene / copper composite material with the current defect concentration to be detected include: electronic specific heat capacity , electron density , electronic thermal conductivity , phonon temperature , electron temperature , electron temperature gradient , laser heat source S(x,t); Construct a two-temperature model including the coupling degree between phonons and electrons in the simulation software

[0050] Obtain module 230, which is used to simulate the interface structure model by using the simulation parameters through the simulation software including the two-temperature model, and obtain the interface thermal conductivity of the graphene / copper composite material to be detected The obtained module 230 includes an obtaining unit, which is used to simulate the interface structure model by using the simulation parameters through the simulation software including the two-temperature model, and obtain the accumulated energy q, temperature gradient and cross-sectional area A of the graphene / copper composite material to be detected; through the formula: , calculate the interface thermal conductivity .

[0051] Determination module 240, which is used to determine that the graphene / copper composite material corresponding to the maximum value in the interface thermal conductivity is the optimal graphene / copper composite material

[0052] In addition, the embodiment of the present application also provides a non-volatile computer storage medium, on which executable instructions are stored. When the executable instructions are executed, the method for calculating the interface thermal conductivity of the graphene / copper composite material as described above is realized

[0053] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present invention. Various modifications to these embodiments will be obvious to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but will be accorded the widest scope consistent with the principles and novel features disclosed herein

Claims

1. A method for calculating the interfacial thermal conductivity of graphene / copper composites, characterized in that, The method includes: Establishing an interface structure model of graphene / copper composites to be detected with different structures; obtaining simulation parameters that conform to the properties of the current graphene / copper composites; Obtaining the coupling degree between phonons and electrons through the phonon-electron coupling formula and the basic parameters of the current graphene / copper composites, and then constructing a two-temperature model including the coupling degree between phonons and electrons in a simulation software; The simulation software containing the two-temperature model uses the simulation parameters to simulate the interface structure model and obtain the interface thermal conductivity of the graphene / copper composites to be detected; Determining the graphene / copper composites with the structure corresponding to the maximum value in the interface thermal conductivity as the optimal graphene / copper composites.

2. The method for calculating the interfacial thermal conductivity of the graphene / copper composite material according to claim 1, wherein The graphene / copper composites to be detected with different structures include graphene / copper composites with different lengths, graphene / copper composites with different copper crystal planes, and graphene / copper composites with different defect concentrations; among them, the defects corresponding to the defect concentration at least include: Stone Wales defect, single vacancy defect, double vacancy V2555777 defect, double vacancy V2585 defect.

3. The method for calculating the interfacial thermal conductivity of the graphene / copper composite material according to claim 1, characterized in that Establishing an interface structure model of graphene / copper composites to be detected with different structures specifically includes: Creating an interface structure model of the graphene / copper composites to be detected with different structures in MaTerials Studio.

4. The method for calculating the interfacial thermal conductivity of the graphene / copper composite material according to claim 1, characterized in that, Obtaining the coupling degree between phonons and electrons through the phonon-electron coupling formula and the basic parameters of the current graphene / copper composites, and then constructing a two-temperature model including the coupling degree between phonons and electrons in a simulation software specifically includes: Through the phonon-electron coupling formula: , calculate the coupling degree between phonons and electrons ; Among them, the parameters of the graphene / copper composite material with the current defect concentration to be detected include: electronic specific heat capacity , electron density , electron thermal conductivity , phonon temperature , electron temperature , electron temperature gradient , laser heat source S(x,t); Constructing a two-temperature model including the coupling degree between phonons and electrons in a simulation software.

5. The method for calculating the interfacial thermal conductivity of the graphene / copper composite material according to claim 1, wherein, The simulation software containing the two-temperature model uses the simulation parameters to simulate the interface structure model and obtain the interface thermal conductivity of the graphene / copper composites to be detected specifically includes: The simulation software incorporating the two-temperature model utilizes simulation parameters to simulate the interface structure model and obtain the accumulated energy q, temperature gradient and cross-sectional area A of the graphene / copper composite material to be detected; Through the formula: , the interfacial thermal conductance is calculated .

6. The method for calculating the interfacial thermal conductivity of the graphene / copper composite material according to claim 1, wherein Obtaining simulation parameters that conform to the properties of the current graphene / copper composites specifically includes: Obtaining simulation parameters through a preset interface.

7. A system for calculating the interfacial thermal conductivity of a graphene / copper composite material, characterized in that, The system includes: A building module for establishing an interface structure model of graphene / copper composites to be detected with different structures; obtaining simulation parameters that conform to the properties of the current graphene / copper composites; A two-temperature module for obtaining the coupling degree between phonons and electrons through the phonon-electron coupling formula and the basic parameters of the current graphene / copper composites, and then constructing a two-temperature model including the coupling degree between phonons and electrons in a simulation software; An obtaining module for using the simulation parameters by the simulation software containing the two-temperature model to simulate the interface structure model and obtain the interface thermal conductivity of the graphene / copper composites to be detected; A determining module for determining the graphene / copper composites with the structure corresponding to the maximum value in the interface thermal conductivity as the optimal graphene / copper composites.

8. The system for calculating the interfacial thermal conductivity of the graphene / copper composite material according to claim 7, characterized in that, The two-temperature module includes a two-temperature unit, For passing through the phonon-electron coupling formula: , the coupling degree between phonons and electrons is calculated and obtained ; Among them, the parameters of the graphene / copper composite material with the current defect concentration to be detected include: electronic specific heat capacity , electron density , electron thermal conductivity , phonon temperature , electron temperature , electron temperature gradient , laser heat source S(x,t); Constructing a two-temperature model including the coupling degree between phonons and electrons in a simulation software.

9. The system for calculating the interfacial thermal conductivity of the graphene / copper composite material according to claim 7, characterized in that, The obtaining module includes an obtaining unit, Using simulation parameters by simulation software including a two-temperature model to simulate an interface structure model, and obtaining the accumulated energy q, temperature gradient and cross-sectional area A of the graphene / copper composite material to be detected; Through the formula: , the interfacial thermal conductance is calculated .

10. A non-volatile computer storage medium, characterized in that, On which computer instructions are stored, and the computer instructions, when executed, implement a method for calculating the interface thermal conductivity of graphene / copper composites as described in any one of claims 1-6.

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