Imaging device and electronic apparatus

Abstract

The present technology relates to an imaging device and an electronic device capable of effectively dissipating heat from a stacked semiconductor substrate. The present technology includes: a first semiconductor substrate including an imaging device; a second semiconductor substrate stacked on the first semiconductor substrate; a first guard ring included in the first semiconductor substrate; a second guard ring included in the second semiconductor substrate; a support substrate stacked on the second semiconductor substrate; a heat dissipation film stacked on the support substrate and made of a high heat dissipation characteristic material; a first through hole, one end of which is connected to the first guard ring and the other end of which is connected to the heat dissipation film, the first through hole penetrating through the support substrate; and a second through hole, one end of which is connected to the second guard ring and the other end of which is connected to the heat dissipation film, the second through hole passing through the support substrate. This technology is applicable to, for example, an imaging device in which an imaging element and a logic circuit are stacked.

Description

Technical Field

[0001] The present technology relates to an imaging device and an electronic device, for example, to an imaging device and an electronic device having high heat dissipation performance. Background Art

[0002] There is a technology for stacking imaging devices such as CCD (charge coupled device) and CMOS (complementary metal oxide semiconductor) image sensors (see Patent Document 1). During the process of stacking chips, heat is generated from each chip, which can lead to degradation of electrical characteristics and image quality. Therefore, there is a demand for imaging devices with high heat dissipation.

[0003] Methods proposed as measures to address heat dissipation include: placing chips flat without stacking them (for example, see Patent Document 2), placing a GND shield to extend around the periphery of the interposer (for example, see Patent Document 3), and providing a metal plate on the periphery of the chip to promote heat dissipation (for example, see Patent Document 4).

[0004] Furthermore, proposed methods for equalizing heat distribution unevenness include electrically connecting chips through a guard ring (eg, see Patent Document 5) or connecting the guard ring to GND in the chip to stabilize the process (eg, see Patent Document 6). List of citations Patent Literature

[0005] Patent Document 1: WO 2019 / 087764 Patent Document 2: JP 2018-116972 A Patent Document 3: JP 2017-228581 A Patent Document 4: JP 2017-152743 A Patent Document 5: JP 2020-191339 A Patent Document 6: JP 2015-76502 A Summary of the Invention Technical issues

[0006] When chips included in an imaging device have a stacked structure, it is difficult to dissipate heat from the light incident side of the imaging device. Consequently, heat is dissipated from the surface opposite the light incident surface. However, if another chip is stacked on the surface opposite the light incident surface, it becomes difficult to dissipate heat from that surface. Furthermore, since heat is generated from the stacked chips themselves, it is difficult to dissipate heat effectively in imaging devices with a stacked structure.

[0007] There is a need for a structure that can effectively dissipate heat even in a stacked chip structure.

[0008] The present technology was developed in view of the above circumstances and aims to enable efficient heat dissipation even in a stacked chip structure. Solutions to technical problems

[0009] According to one aspect of the present technology, an imaging device includes: a first semiconductor substrate, which includes an imaging device; a second semiconductor substrate, which is stacked on the first semiconductor substrate; a first guard ring, which is included in the first semiconductor substrate; a second guard ring, which is included in the second semiconductor substrate; a support substrate, which is stacked on the second semiconductor substrate; a heat dissipation film, which is stacked on the support substrate and is made of a high heat dissipation material; a first through hole, one end of which is connected to the first guard ring and the other end is connected to the heat dissipation film, and extends through the support substrate; and a second through hole, one end of which is connected to the second guard ring and the other end is connected to the heat dissipation film, and extends through the support substrate.

[0010] An electronic device according to one aspect of the present technology includes: a camera device, the camera device including: a first semiconductor substrate, which includes the camera device; a second semiconductor substrate, which is stacked on the first semiconductor substrate; a first guard ring, which is included in the first semiconductor substrate; a second guard ring, which is included in the second semiconductor substrate; a support substrate, which is stacked on the second semiconductor substrate; a heat dissipation film, which is stacked on the support substrate and is made of a high heat dissipation material; a first through hole, one end of which is connected to the first guard ring and the other end is connected to the heat dissipation film, and extends through the support substrate; and a second through hole, one end of which is connected to the second guard ring and the other end is connected to the heat dissipation film, and extends through the support substrate; and a processing unit, which performs processing on a signal from the camera device.

[0011] According to one aspect of the present technology, an imaging device includes: a first semiconductor substrate, which includes an imaging device; a second semiconductor substrate, which is stacked on the first semiconductor substrate; a first guard ring, which is included in the first semiconductor substrate; a second guard ring, which is included in the second semiconductor substrate; a support substrate, which is stacked on the second semiconductor substrate; a heat dissipation film, which is stacked on the support substrate and is made of a high heat dissipation material; a first through hole, one end of which is connected to the first guard ring and the other end is connected to the heat dissipation film, and extends through the support substrate; and a second through hole, one end of which is connected to the second guard ring and the other end is connected to the heat dissipation film, and extends through the support substrate.

[0012] An electronic device according to one aspect of the present technology includes an imaging device.

[0013] The camera device and the electronic device may be independent devices or internal blocks of a single device. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] [ Figure 1 ] Figure 1 It is a diagram of an exemplary configuration of an image pickup device according to a first embodiment to which the present technology is applied. [ Figure 2 ] Figure 2 is a diagram showing an exemplary planar configuration of an imaging device. [ Figure 3 ] Figure 3 It is a diagram of an exemplary configuration of an image pickup device according to a second embodiment to which the present technology is applied. [ Figure 4 ] Figure 4 is a diagram illustrating an exemplary planar configuration of an imaging device. [ Figure 5 ] Figure 5 It is a diagram showing the manufacturing process of the imaging device. [ Figure 6 ] Figure 6 It is a diagram showing the manufacturing process of the imaging device. [ Figure 7 ] Figure 7 It is a diagram showing the manufacturing process of the imaging device. [ Figure 8 ] Figure 8 It is a diagram showing the manufacturing process of the imaging device. [ Figure 9 ] Figure 9 It is a diagram showing the manufacturing process of the imaging device. [ Figure 10 ] Figure 10 It is a diagram showing the manufacturing process of the imaging device. [ Figure 11 ] Figure 11 is a diagram showing an exemplary configuration of an electronic device. DETAILED DESCRIPTION

[0015] Now, a mode for carrying out the present technology (hereinafter, referred to as an embodiment) will be described.

[0016] <First embodiment> Figure 1 This figure shows an exemplary cross-sectional structure of an imaging device 1a according to a first embodiment of the present technology. In the imaging device 1a, second and third semiconductor substrates 12 and 13 are arranged on the same plane on a first semiconductor substrate 11. A support substrate 14 is stacked on the surfaces of the second and third semiconductor substrates 12 and 13 on the side opposite to the side on which the first semiconductor substrate is stacked.

[0017] For the first semiconductor substrate 11, an on-chip lens 31, a color filter 32, and an imaging device 33 are sequentially stacked, and a wiring layer 34 is provided below the imaging device 33. In the wiring layer 34, connection terminals 36 for connecting to the second and third semiconductor substrates 12 and 13 are formed.

[0018] The second semiconductor substrate 12 is a chip stacked on the first semiconductor substrate 11 and is, for example, a memory or logic circuit. The second semiconductor substrate 12 includes a wiring layer 51 including connection terminals 53. When the first and second semiconductor substrates 11 and 12 are in a chip state before being stacked, the connection terminals 36 in the first semiconductor substrate 11 and the connection terminals 53 in the second semiconductor substrate 12 are exposed and directly connected.

[0019] The first semiconductor substrate 11 and the second semiconductor substrate 12 are electrically connected by connecting the connection terminals 36 in the first semiconductor substrate 11 and the connection terminals 53 in the second semiconductor substrate 12 .

[0020] The third semiconductor substrate 13 is a chip stacked on the first semiconductor substrate 11 and is, for example, a memory or logic circuit. The third semiconductor substrate 13 includes a wiring layer 51 including connection terminals 73. When the first and third semiconductor substrates 11 and 13 are in a chip state during stacking, the connection terminals 36 in the first semiconductor substrate 11 and the connection terminals 73 in the third semiconductor substrate 13 are exposed and directly connected.

[0021] The first semiconductor substrate 11 and the third semiconductor substrate 13 are electrically connected by connecting the connection terminal 36 in the first semiconductor substrate 11 and the connection terminal 73 in the third semiconductor substrate 13 .

[0022] The first semiconductor substrate 11 and the second semiconductor substrate 12, as well as the first semiconductor substrate 11 and the third semiconductor substrate 13, are bonded via a bonding film 15. The second semiconductor substrate 12, the third semiconductor substrate 13, and the support substrate 14 are bonded via an insulating film 17. The second semiconductor substrate 12 and the third semiconductor substrate 13 are enclosed in the insulating film 17. The bonding film 15 and the insulating film 17 may be oxide films.

[0023] The guard ring 35 is formed on the first semiconductor substrate 11 , the guard ring 52 is formed on the second semiconductor substrate 12 , and the guard ring 72 is formed on the third semiconductor substrate 13 .

[0024] The guard ring 35 is provided to protect the elements in the first semiconductor substrate 11 when the first semiconductor substrate 11 is singulated from a wafer. The guard ring 52 is provided to protect the elements in the second semiconductor substrate 12 when the second semiconductor substrate 12 is singulated from a wafer. The guard ring 72 is provided to protect the elements in the third semiconductor substrate 13 when the third semiconductor substrate 13 is singulated from a wafer. The guard ring is provided in the semiconductor substrate (chip) and is electrically connected to the GND (ground) in the chip.

[0025] The through-hole 41 is connected to the guard ring 35 for the first semiconductor substrate 11 . The through-hole 42 is connected to the guard ring 52 for the second semiconductor substrate 12 . The through-hole 43 is connected to the guard ring 52 for the third semiconductor substrate 13 .

[0026] Figure 2 1 shows an exemplary planar configuration of the imaging device 1a, and shows a guard ring 35, a guard ring 52, a guard ring 72, and through-holes 41, 42, and 43. The guard ring 35 is provided on the outer peripheral portion surrounding the elements such as the imaging device 33 provided on the first semiconductor substrate 11. A plurality of through-holes 41 are connected to the guard ring 35.

[0027] The guard ring 52 is provided on the outer periphery of the components provided on the second semiconductor substrate 12. The plurality of through holes 42 are connected to the guard ring 52. The guard ring 72 is provided on the outer periphery of the components provided on the third semiconductor substrate 13. The plurality of through holes 43 are connected to the guard ring 72.

[0028] Through-holes 41 to 43 are arranged at equal intervals. Although shown as being arranged at equal intervals, through-holes 41 to 43 do not necessarily need to be arranged at equal intervals. Although shown as circular in shape, each of through-holes 41 to 43 may have a shape other than circular, such as a rectangular shape. The size, position, and shape of the through-holes may be the same as those of the guard ring; in other words, the guard ring and the through-holes may be arranged in an overlapping state in a plan view.

[0029] Through holes 41 to 43 have a heat dissipation function. A guard ring exists in the semiconductor substrate (chip) and is electrically connected to the GND in the chip. Therefore, heat generated in the semiconductor substrate is effectively transferred to the guard ring. The through holes are connected to the guard ring.

[0030] Reference Figure 1 In the exemplary cross-sectional configuration of the imaging device 1a shown, heat generated in the first semiconductor substrate 11 is transferred to the through-hole 41 via the guard ring 35. The through-hole 41 is connected to the heat dissipation film 16 formed on the bottom surface of the support substrate 14, and the heat transferred to the through-hole 41 is transferred to the heat dissipation film 16 and dissipated to the outside.

[0031] Heat generated in second semiconductor substrate 12 is transferred to through-hole 42 via guard ring 52. The heat transferred to through-hole 42 is transferred to heat dissipation film 16 and dissipated to the outside. Heat generated in third semiconductor substrate 13 is transferred to through-hole 43 via guard ring 72. The heat transferred to through-hole 43 is transferred to heat dissipation film 16 and dissipated to the outside.

[0032] The heat dissipation film 16 is formed as a cover film on the support substrate 14 and is formed to have as large an area as possible. The heat dissipation film 16 is made of a high heat dissipation material such as metal. The heat dissipation film 16 can be used as the GND of the mounting substrate and can be electrically connected to the mounting substrate.

[0033] The through-holes 42 may be filled with a material having high thermal conductivity to provide improved heat dissipation performance.

[0034] The bonding film 15 for bonding the first semiconductor substrate 11 and the second semiconductor substrate 12 may be an insulating film made of a material having good heat dissipation properties. For example, the material for the bonding film 15 may be Al 2 O 3 .

[0035] In reference Figure 1 and Figure 2 In the described imaging device 1 a , the through holes 41 , 42 , and 43 connected to the guard rings 35 , 52 , and 72 are provided so that heat generated in each of the first semiconductor substrate 11 , the second semiconductor substrate 12 , and the third semiconductor substrate 13 can be effectively dissipated.

[0036] <Second embodiment> Figure 3 shows an exemplary cross-sectional configuration of an image pickup device 1b according to the second embodiment, and Figure 4 Its exemplary planar structure is shown. Figure 3 and Figure 4 In the imaging device 1b of the second embodiment shown in FIG. 1 , the same reference numerals are assigned to the imaging devices 1b and 1b as those in FIG. Figure 1 and Figure 2 The same elements as those of the image pickup device 1a of the first embodiment are shown, and description thereof will not be repeated as appropriate.

[0037] Figure 3 The image pickup device 1b shown is provided with a protective film 101, and has the same structure as the protective film 101 except for the through holes 44 and 45 connected to the protective film 101. Figure 1 The camera devices 1 a shown are substantially identical.

[0038] The protective film 101 is made of a heat-dissipating material such as metal. The protective film 101 is formed in areas where the first and second semiconductor substrates 11, 12 are not in contact with each other, and in areas where the first and third semiconductor substrates 11, 13 are not in contact with each other. The protective film 101 is also formed on the side surfaces of the second semiconductor substrate 12 and on the surface opposite to the surface in contact with the first semiconductor substrate 11 (referred to as the back surface). The protective film 101 is also formed on the side surfaces of the third semiconductor substrate 13 and on the surface opposite to the surface in contact with the first semiconductor substrate 11 (referred to as the back surface).

[0039] Reference Figure 4 In the exemplary planar structure shown, the protective film 101 is formed over the entire surface of the imaging device 1 in plan view. Through-holes 44 are arranged at equal intervals in the region where the second semiconductor substrate 12 is present. Through-holes 45 are arranged at equal intervals in the region where the third semiconductor substrate 13 is present. If areas where through-holes can be provided exist between the protective ring 35 of the first semiconductor substrate 11 and the second semiconductor substrate 12, between the second semiconductor substrate 12 and the third semiconductor substrate 13, and between the protective ring 35 of the first semiconductor substrate 11 and the third semiconductor substrate 13, through-holes can also be provided.

[0040] like Figure 3 As shown, one end of the through hole 44 is connected to the protective film 101 formed on the surface of the second semiconductor substrate 12, and the other end is connected to the heat dissipation film 16. Heat generated in the second semiconductor substrate 12 is transferred from the protective film 101 to the through hole 44, and from the through hole 44 to the heat dissipation film 16, and is dissipated to the outside.

[0041] Compared with the imaging device 1a ( Figure 1 ) Similarly, since the through hole 42 is connected to the guard ring 52 of the second semiconductor substrate 12, heat can also flow from the guard ring 52 to the through hole 42, and then flow from the through hole 42 to the heat dissipation film 16, thereby being able to dissipate the heat generated in the second semiconductor substrate 12.

[0042] Although in reference Figure 3 In the illustrated exemplary configuration, the guard ring 52 and the through-hole 42 are directly connected, but the guard ring 52 and the through-hole 42 may be connected with the protective film 101 interposed therebetween.

[0043] One end of the through hole 45 is connected to the protective film 101 formed on the surface of the third semiconductor substrate 13, and the other end is connected to the heat dissipation film 16. Heat generated in the third semiconductor substrate 13 is transferred from the protective film 101 to the through hole 45, and then from the through hole 45 to the heat dissipation film 16, and dissipated to the outside.

[0044] Compared with the imaging device 1a ( Figure 1 ) Similarly, since the through hole 43 is connected to the guard ring 72 of the third semiconductor substrate 13, heat can also flow from the guard ring 72 to the through hole 43, and then from the through hole 43 to the heat dissipation film 16, so that the heat generated in the third semiconductor substrate 13 can be dissipated. Figure 3 The exemplary configuration described above directly connects the guard ring 72 and the through-hole 43 , but the guard ring 72 and the through-hole 43 may be connected with the protective film 101 interposed therebetween.

[0045] The heat generated in the first semiconductor substrate 11 is transferred to the protective film 101 stacked on the bonding film 15 via the bonding film 15. Since the through-holes 41 to 45 are connected to the protective film 101, the heat transferred to the protective film 101 is transferred to the through-holes 41 to 45, and further transferred from the through-holes 41 to 45 to the heat dissipation film 16, and dissipated to the outside.

[0046] Compared with the imaging device 1a ( Figure 1 ) Similarly, in the first semiconductor substrate 11, since the through hole 41 is connected to the protective ring 35 of the first semiconductor substrate 11, heat can also flow from the protective ring 35 to the through hole 41, and then flow from the through hole 41 to the heat dissipation film 16, thereby being able to dissipate the heat generated in the first semiconductor substrate 11.

[0047] Although in reference Figure 3 In the exemplary configuration described above, the guard ring 35 and the through-hole 41 are directly connected, but the guard ring 35 and the through-hole 41 may be connected with the protective film 101 interposed therebetween.

[0048] exist Figure 3 , the through-holes 44 and 45 are provided to extend through the protective film 101 and contact the second semiconductor substrate 12 or the third semiconductor substrate 13 , however the through-holes may be configured to contact the protective film 101 without penetrating the film 101 .

[0049] In this manner, similarly to the image pickup device 1 a according to the first embodiment, in the image pickup device 1 b according to the second embodiment, heat generated in each of the first semiconductor substrate 11 , the second semiconductor substrate 12 , and the third semiconductor substrate 13 can be efficiently dissipated.

[0050] <Manufacturing of Imaging Device> Figure 5 This is a diagram for illustrating the CoW (Chip On Wafer) technology applied when manufacturing the image pickup device 1 .

[0051] On the wafer 201 corresponding to the first semiconductor substrate on which a plurality of imaging devices (CMOS (Complementary Metal Oxide Semiconductor) image sensors and CCDs (Charge Coupled Devices)) are formed, the second semiconductor substrate 12 and the third semiconductor substrate 13 corresponding to the memory circuits and logic circuits that are singulated and determined to be non-defective chips are stacked.

[0052] The wafer 201 is composed of a plurality of first semiconductor substrates 11 on which the imaging devices 33 are formed by a semiconductor process. A plurality of second semiconductor substrates 12, which have been formed on a wafer 203 by a semiconductor process, singulated, and then electrically inspected and determined to be non-defective chips, and a plurality of third semiconductor substrates 13, which have been formed on a wafer 204 by a semiconductor process, singulated, and then electrically inspected and determined to be non-defective chips, are selected and rearranged on the first semiconductor substrates 11 formed on the wafer 201.

[0053] Reference Figures 6 to 8 , the manufacturing process until the production of the camera device 1b will be described, wherein Figure 5 Wafers 201 , 203 , and 204 are shown manufactured, and the singulated second and third semiconductor substrates 12 and 13 are stacked on the first semiconductor substrate 11 .

[0054] In step S11( Figure 6 ), alignment is performed so that the connection terminals 36 of the first semiconductor substrate 11 on the wafer 201 and the connection terminals 53 of the second semiconductor substrate 12 that has been singulated from the wafer 203 and determined to be a non-defective chip are appropriately opposed to each other. Furthermore, alignment is performed so that the connection terminals 36 of the first semiconductor substrate 11 on the wafer 201 and the connection terminals 73 of the third semiconductor substrate 13 that has been singulated from the wafer 204 and determined to be a non-defective chip are appropriately opposed to each other.

[0055] For example, the connection terminal 36 and the connection terminal 53 are connected, and the connection terminal 36 and the connection terminal 73 are connected by a CuCu junction. Through this process, the first semiconductor substrate 11, the second semiconductor substrate 12, and the third semiconductor substrate 13 are electrically connected.

[0056] When arranging (bonding) is performed, a bonding film 15 of a heat dissipation material is formed on the first semiconductor substrate 11 , and the formed film is bonded to the second semiconductor substrate 12 and the third semiconductor substrate 13 .

[0057] In step S12 , the second semiconductor substrate 12 and the third semiconductor substrate 13 are thinned, for example, by etching.

[0058] In step S13 , a groove is formed in the guard ring 52 of the second semiconductor substrate 12 , and a through hole 301 is formed in the guard ring 72 of the third semiconductor substrate 13 .

[0059] In step S14, protective film 101 is formed. When a material having both electrical conductivity and high thermal conductivity is used as the material for protective film 101, through-holes 301 and 302 may also be filled with this material when protective film 101 is formed, thereby forming a portion of through-holes 42 and 43. In this way, when through-holes 301 and 302 are also filled with the same material as protective film 101, through-holes 42 and 43 are formed in contact with protective film 101 without penetrating protective film 101 in subsequent processing.

[0060] When a material with low electrical conductivity but high thermal conductivity is used as the material for protective film 101, through-holes 301 and 302 are filled with the highly conductive material, and after the filling is completed, protective film 101 is formed. In this case, the material of protective film 101 and the material in through-holes 301 and 302 are different materials. When through-holes 301 and 302 are filled with a material different from that of protective film 101, through-holes 42 and 43 are formed in subsequent processing at positions where these through-holes extend through protective film 101 and contact guard rings 52 and 72 through through-holes 301 and 302.

[0061] In step S15 ( Figure 7 As described in step S15, the insulating film 17 is formed so that the second semiconductor substrate 12 and the third semiconductor substrate 13 are included in the insulating film 17.

[0062] In step S16, the support substrate 14 is attached to the formed insulating film 17. In step S17, through holes 311 to 315 to be the through holes 41 to 45 are formed.

[0063] In step S18 ( Figure 8 ), through holes 41 to 545 are formed by filling through holes 311 to 315 with a high heat dissipation material.

[0064] Through-holes 41 to 43 connected to the guard ring and through-holes 44 and 45 connected to the protection film 101 instead of the guard ring may be filled with different materials. Through-holes 41 to 43 connected to the guard ring may be filled with a heat-dissipating and conductive material, and through-holes 44 and 45 connected to the protection film 101 may be filled with a high heat-dissipating material.

[0065] In step S18 , after the through holes 41 to S45 are formed, the heat dissipation film 16 is further formed on the support substrate 14 .

[0066] In step S18, the wafer 201 is removed. In step S19, the on-chip lens 31 and the color filter 32 are provided on the image pickup device 33, and the image pickup apparatus 1 is completed by singulation.

[0067] In this way, the protective film 101 and the through-holes 41 to 45 are formed, and the image pickup device 1 with improved heat dissipation is manufactured.

[0068] <Second Manufacturing Process> Reference Figure 9 and Figure 10 , will be described until the manufacturing Figure 3 An alternative manufacturing process (referred to as a second manufacturing process) for the camera device 1b shown in FIG. Figure 5 As shown, the singulated second and third semiconductor substrates 12 and 13 are provided on a wafer 201 (first semiconductor substrate 11 ).

[0069] In step S51, the second semiconductor substrate 12 and the third semiconductor substrate 13 are arranged on the wafer 201, and in step S52, the second semiconductor substrate 12 and the third semiconductor substrate 13 are thinned. Steps S51 and S52 are similar to Figure 6 Steps S11 and S12 in are the same.

[0070] In step S53, the protective film 101 is formed. Step S53 is substantially the same as step S14 (step S54), except that the step of filling the through holes 301 and 302 with a material is omitted because the through holes 301 and 302 are not provided. Figure 6 )same.

[0071] In step S54 ( Figure 10 ), embedding is performed. In step S55, the support substrate 14 is attached to the formed insulating film 17. Steps S54 and S55 are the same as steps S15 and S16 ( Figure 7 )same.

[0072] In step S56, through holes 331 to 335 to be through holes 41 to 45 are formed. Step S56 and step S17 ( Figure 7 ) are substantially the same as those in step S56, but the positions at which the through holes are drilled are different. Since through holes corresponding to through holes 301 and 302 have not yet been formed, in step S56, drilling is performed until the positions corresponding to through holes 301 and 302 are reached. More specifically, through hole 332 is drilled until it contacts guard ring 52, and through hole 334 is drilled until it contacts guard ring 72.

[0073] In step S56, after forming the through holes 331 to 335, steps S18 to S20 are performed ( Figure 8 ) to manufacture the camera device 1.

[0074] In this way, the protective film 101 and the through-holes 41 to 45 are formed, and the image pickup device 1 with improved heat dissipation is manufactured.

[0075] <Application Examples of Electronic Devices> This technology is generally applicable to all electronic devices that use an imaging device as an imaging unit (photoelectric conversion unit), including imaging devices such as digital cameras and video cameras, portable terminal devices with imaging functions, and copiers that use the imaging device as an image reading unit. The imaging device can be formed into a single-chip structure or a module with imaging functions in which the imaging unit and signal processing unit or optical system are integrated into a package.

[0076] Figure 11 This is a block diagram showing an exemplary configuration of an imaging device as an electronic device to which the present technology is applied.

[0077] Figure 11 The image pickup device 1000 in FIG. 1 includes an optical unit 1001 having a lens group, an image pickup device 1002, and a DSP (Digital Signal Processor) circuit 1003 serving as a camera signal processing circuit. The image pickup device 1000 includes a frame memory 1004, a display unit 1005, a recording unit 1006, an operation unit 1007, and a power supply unit 1008. The DSP circuit 1003, the frame memory 1004, the display unit 1005, the recording unit 1006, the operation unit 1007, and the power supply unit 1008 are connected to one another via a bus 1009.

[0078] The optical unit 1001 captures incident light (image light) from a subject and forms an image on an imaging plane of the imaging device 1002. The imaging device 1002 converts the amount of incident light formed as an image on the imaging plane by the optical unit 1001 into an electrical signal on a per-pixel basis and outputs the resultant signal as a pixel signal.

[0079] The display unit 1005 may include a thin display such as an LCD (Liquid Crystal Display) or an organic EL (Electro Luminescence) display, and displays a moving image or a still image captured by the camera 1002. The recording unit 1006 records the moving image or the still image captured by the camera 1002 onto a recording medium such as a hard disk and a semiconductor memory.

[0080] The operation unit 1007 provides, in response to user operations, operation instructions regarding various functions of the imaging apparatus 1000. The power supply unit 1008 appropriately supplies various types of power used as operating power sources for the DSP circuit 1003, the frame memory 1004, the display unit 1005, the recording unit 1006, and the operation unit 1007 to these target components.

[0081] The imaging device 1 of the first and second embodiments can be used for Figure 11 A portion of the camera device is shown.

[0082] The term "system" used here refers to the entire equipment composed of a plurality of devices.

[0083] Note that the beneficial effects described herein are merely examples and are not intended to be limiting, and other beneficial effects may be obtained.

[0084] Note that the embodiments of the present technology are not limited to the described embodiments, and various modifications can be made without departing from the gist of the present technology.

[0085] The present technology may also have the following configurations. (1) A camera device comprising: a first semiconductor substrate including an imaging device; a second semiconductor substrate stacked on the first semiconductor substrate; a first guard ring included in the first semiconductor substrate; a second guard ring included in the second semiconductor substrate; a supporting substrate stacked on the second semiconductor substrate; a heat dissipation film stacked on the support substrate and made of a high heat dissipation material; a first through hole having one end connected to the first guard ring and the other end connected to the heat dissipation film, and extending through the support substrate; and A second through hole, one end of which is connected to the second guard ring and the other end of which is connected to the heat dissipation film, extends through the support substrate. (2) The imaging device according to (1), wherein the first through hole and the second through hole are filled with a high thermal conductivity material. (3) The imaging device according to (1) or (2), further comprising a protective film formed between the first semiconductor substrate and the support substrate and between the second semiconductor substrate and the support substrate; and A third through hole, one end of which is connected to the protective film and the other end of which is connected to the heat dissipation film, extends through the support substrate. (4) The imaging device according to (3), wherein The first guard ring and the first through hole are connected through the protective film; and The second guard ring and the second through hole are connected through the protective film. (5) The imaging device according to any one of (1) to (4), wherein the heat dissipation film is grounded. (6) An electronic device, comprising: A camera device comprising: a first semiconductor substrate including an imaging device; a second semiconductor substrate stacked on the first semiconductor substrate; a first guard ring included in the first semiconductor substrate; a second guard ring included in the second semiconductor substrate; a supporting substrate stacked on the second semiconductor substrate; a heat dissipation film stacked on the support substrate and made of a high heat dissipation material; a first through hole having one end connected to the first guard ring and the other end connected to the heat dissipation film, and extending through the support substrate; and a second through hole having one end connected to the second guard ring and the other end connected to the heat dissipation film, and extending through the support substrate; and A processing unit processes the signal from the camera device. Reference Signs List

[0086] 1 Camera 11. First semiconductor substrate 12. Second semiconductor substrate 13. Third semiconductor substrate 14 Support substrate 15 Bonding film 16 heat dissipation film 17 Insulation film 31 On-chip lens 32 Color Filters 33 Camera 34 Wiring layer 35 protection ring 36 connection terminals 41, 42, 43, 44, 45 through holes 51 Wiring layer 52 protection ring 53 connection terminals 72 protection ring 73 connection terminals 101 protective film 201, 203, 204 chips 301, 302, 311 to 315, 331 to 335 through holes.

Claims

1. A camera device, comprising: a first semiconductor substrate including an imaging device; a second semiconductor substrate stacked on the first semiconductor substrate; a first guard ring included in the first semiconductor substrate; a second guard ring included in the second semiconductor substrate; a supporting substrate stacked on the second semiconductor substrate; a heat dissipation film stacked on the support substrate and made of a high heat dissipation material; a first through hole having one end connected to the first guard ring and the other end connected to the heat dissipation film, and extending through the support substrate; as well as A second through hole, one end of which is connected to the second guard ring and the other end of which is connected to the heat dissipation film, extends through the support substrate.

2. The imaging device according to claim 1, wherein The first through hole and the second through hole are filled with a high thermal conductivity material.

3. The imaging device according to claim 1 , further comprising a protective film formed between the first semiconductor substrate and the support substrate and between the second semiconductor substrate and the support substrate; and A third through hole, one end of which is connected to the protective film and the other end of which is connected to the heat dissipation film, extends through the support substrate. The imaging device according to claim 3 , wherein: The first guard ring and the first through hole are connected through the protective film; and The second guard ring and the second through hole are connected through the protective film. The imaging device according to claim 1 , wherein: The heat dissipation film is grounded.

6. An electronic device comprising: A camera device comprising: a first semiconductor substrate including an imaging device; a second semiconductor substrate stacked on the first semiconductor substrate; a first guard ring included in the first semiconductor substrate; a second guard ring included in the second semiconductor substrate; a supporting substrate stacked on the second semiconductor substrate; a heat dissipation film stacked on the support substrate and made of a high heat dissipation material; a first through hole having one end connected to the first guard ring and the other end connected to the heat dissipation film, and extending through the support substrate; and a second through hole having one end connected to the second guard ring and the other end connected to the heat dissipation film, and extending through the support substrate; and A processing unit processes the signal from the camera device.

Images