Construction method and system of electrolytic device model based on inlay structure

Abstract

The present application relates to the construction method and system of the electrolytic device model based on the mosaic structure, which comprises the following steps: providing the mosaic electrolytic device, setting the semiconductor electronic component to be electrolytic plated at the designated position of the mosaic electrolytic device, calculating the cross-sectional area of the jet outlet of the electrolytic anode device and the area of the local plating area of the semiconductor electronic component; constructing the operation model of the electrolytic anode device and the operation model of the local plating area of the semiconductor electronic component. The present application can quickly obtain the selectively adjustable mosaic electrolytic anode jet outlet size, and can precisely electroplate the selectively adjustable electrolytic anode of various high-end semiconductor electronic component local plating areas, electroplating device and electroplating method, so as to realize that only by replacing the mosaic electrolytic anode and the electrolytic mold mosaic combination with different sizes, the semiconductor electronic component products of different electroplating areas can be used, and the electrolytic device model based on the mosaic structure of various different semiconductor electronic component local plating areas can be accurately and quickly obtained.

Description

Technical Field

[0001] The present invention relates to a method and system for constructing an electrolysis device model based on a mosaic structure, and belongs to the technical field of artificial intelligence control and local electronic electroplating of semiconductor electronic components. Background Art

[0002] The electrolytic device is a component that is extremely sensitive to the effects of the local electrochemical-physical spatial environment of metal ions during the metal plating manufacturing process of semiconductor electronic components. In the field of electroplating equipment technology, it is called a mold. It has a wide range of applications in high-end manufacturing fields such as the research and development and production of small and precise electronic products, electrochemical research of electroplating solutions, and metal electroplating of semiconductor electronic components. During the operation of electroplating equipment, the material and shape of the electrolytic device, the size of its surface openings, and other factors have a numerous and complex impact on the electroplating deposition of metal ions in the electroplating solution on the surface of semiconductor electronic components. Therefore, due to the interference of various influencing factors, the actual deposited metal coating will have various differences. In mild cases, it will make the coating area difficult to control, the coating will precipitate too quickly and be rough. In severe cases, it will lead to a lack of coating density and uneven distribution of coating thickness, making it difficult to meet the high-end performance requirements of semiconductor electronic components.

[0003] With the rapid advancement of science and technology, the localized electroplating areas of semiconductor electronic components are increasingly miniaturized in the field of electroplating equipment. Currently, localized electroplating devices for semiconductor electronic components typically utilize a single electrolytic anode and a corresponding water bladder. The jet outlet size of the electrolytic anode is fixed, making it difficult to meet the diverse shapes of localized plating areas for new semiconductor electronic components. Therefore, existing localized electroplating technologies for semiconductor electronic components require the remanufacturing of electrolytic anodes of different sizes when the localized plating area changes. This not only requires the design, fabrication, and evaluation of new electrolytic anodes, but also results in a lengthy debugging cycle for localized electroplating conditions for semiconductor electronic components, making it difficult to adapt to the rapidly developing demand for various high-end precision electroplating technologies for semiconductor electronic components. Furthermore, different semiconductor electronic components require more anode metal material, increasing human, material, and financial resources. Therefore, exploring a method and system for constructing an electrolytic device model that can rapidly and selectively adjust the jet outlet size of the electrolytic anode within a certain range and is capable of precision plating the localized plating areas of various high-end semiconductor electronic components has become a crucial and urgent issue. Summary of the Invention

[0004] To solve the above problems, the present invention provides a method and system for constructing an electrolytic device model based on a mosaic structure to meet the requirements of accurate screening of optimal conditions for electrolytic anodes and shortening the R&D cycle during the metal plating process of high-end semiconductor lead frames.

[0005] To achieve the above object, the technical scheme adopted by the present application is as follows:

[0006] In the first aspect, the present application provides a construction method of an electrolytic device model based on a mosaic structure, comprising:

[0007] Step 1: providing a mosaic electrolytic device, the mosaic electrolytic device comprising an electrolytic mold, the electrolytic mold being provided with a plurality of through openings, and an electrolytic anode device being embedded in each through opening of the electrolytic mold;

[0008] Step 2: after embedding the electrolytic anode device in each through opening of the electrolytic mold, an open electrolytic mold for assembling the mosaic electrolytic device is formed, and the hollow cross-sectional area of the electrolytic anode device is consistent with the shape and area of the local plating area of the semiconductor electronic component;

[0009] Step 3: setting the semiconductor electronic component to be electrolytic plated at a predetermined position of the mosaic electrolytic device;

[0010] Step 4: calculating the cross-sectional area of the spray outlet of the electrolytic anode device S 阳极 , and the local plating area of the semiconductor electronic component S 镀区 ;

[0011] Step 5: based on the thermal expansion coefficient of the metal material α , constructing an operation model of the electrolytic anode device and an operation model of the local plating area of the semiconductor electronic component;

[0012] Step 6: based on the operation model of the electrolytic anode device in step 5, the electrolytic anode device in step 4 is simulated and optimized to obtain the simulated cross-sectional area of the spray outlet S 模拟阳极 and the simulated area of the local plating area of the semiconductor electronic component S 模拟镀区 ;

[0013] Step 7: based on the local plating area of the semiconductor electronic component in step 6, the side length of the square local plating area of the semiconductor electronic component L 镀区 satisfies the requirement that L 最小标准 ≤ L 镀区 ≤ L 最小标准 +0.05mm, wherein L 最小标准 is the minimum size of the local plating area of the semiconductor electronic component, and the simulated cross-sectional area of the spray outlet in step 6 S 模拟阳极 and the simulated area of the local plating area of the semiconductor electronic component in step 6 S 模拟镀区Applied to high-end plating equipment modules for testing to obtain actual S 实测阳极 and S 实测镀区 ;

[0014] Step 8: Compare S 实测阳极 and S 实测镀区 , if:

[0015] S 实测镀区 ≤ S 实测阳极 ≤ S 实测镀区 + 0.05mm formula 1

[0016] Then confirm that the electrolysis device model of the mosaic structure is applicable; otherwise, the actual S 实测阳极 and S 实测镀区 As a benchmark, correct S 模拟阳极 and S 模拟镀区 And loop steps 4 to 8 until the conditions of formula 1 are met.

[0017] In one embodiment of the present invention, in step 4, the cross-sectional area of ​​the ejection outlet of the electrolysis anode device is calculated by formula 2. S 阳极 :

[0018] S 阳极 = L 阳极 × D 阳极 Formula 2

[0019] Where: L 阳极 is the length of the ejection outlet of the electrolysis anode device, dm; D 阳极 is the width of the ejection outlet of the electrolytic anode device, dm;

[0020] The local plating area of ​​the semiconductor electronic component is calculated by formula 3 S 镀区 :Among them n rectangular localized plating areas, and m Circular local plating area:

[0021] S 镀区 =( L 镀区 ×D 镀区 )× n+ r 2 π × m Formula 3

[0022] Where: L 镀区 is the length of the rectangular local plating area, dm; D 镀区 is the width of the rectangular local plating area, dm; r is the radius of the circular local plating area, dm.

[0023] In one embodiment of the present invention, the step 5 specifically includes: selecting the metal material of the electrolytic anode device and simulating the thermal expansion coefficient of the metal material based on the electrolytic anode device calculation model. α 阳极 :

[0024] α 阳极 = (Δ S 阳极 / Δ T ) / S 基准阳极 Formula 4

[0025] Where: α 阳极 is the thermal expansion coefficient of the anode metal; ΔS 阳极 is the area change of the ejection outlet of the electrolytic anode device as the temperature changes, ΔS 阳极 = S 实测阳极 - S 基准阳极 ; Δ T Specific temperature set for the plating solution T 特定温度 With reference temperature T 基准温度 Change value, ΔT = T 特定温度 - T 基准温度 ; S 基准阳极 At the reference temperature T 基准温度 The cross-sectional area of ​​the injection outlet of the electrolysis anode device under the conditions.

[0026] In one embodiment of the present invention, the step 5 further includes: selecting a metal material according to the semiconductor electronic component, and simulating the thermal expansion coefficient of the metal material based on the local plating area calculation model of the semiconductor electronic component. α镀区 :

[0027] α 镀区 = (Δ S 镀区 / Δ T ) / S 基准镀区 Formula 5

[0028] Where: α 镀区 is the thermal expansion coefficient of the metal of the semiconductor electronic component; ΔS 镀区 is the area change of the local plating area of ​​the semiconductor electronic component as the temperature changes, that is, ΔS 镀区 = S 实测镀区 - S 基准镀区 ; Δ T Specific temperature set for the plating solution T 特定温度 With reference temperature T 基准温度 Change value, ΔT = T 特定温度 - T 基准温度 ; S 基准镀区 At the reference temperature T 基准温度 The local plating area of ​​semiconductor electronic components under the following conditions;

[0029] in, ΔS 镀区 Satisfy the following formula:

[0030] 0≤ Δ S 镀区 ≤ 0.05mm formula 6.

[0031] In one embodiment of the present invention, the plating solution fluid flow loss of the mosaic electrolysis device is corrected by the following formula:

[0032] Formula 8

[0033] in, is the fluid density, and is the velocity component, For time, and is the spatial coordinate, For pressure, is the stress tensor, is the gravity component, express The differential term of fluid diffusion at time t, express The differential term of the viscous kinetic energy of continuous flow in the direction, the right side of the equal sign is the specific expansion; express The compression and expansion differential term in the direction, express The differential term of the fluid stress in the direction, represents the gravity component of the fluid; is the electromagnetic force term; Correction factor for fluid flow loss of the plating solution in a mosaic electrolysis device.

[0034] In one embodiment of the present invention, the metal material of the electrolytic anode device includes: titanium, titanium plated with platinum, and stainless steel; wherein, when the electrolytic anode device is titanium plated with platinum, only the electrolytic anode device is plated.

[0035] In one embodiment of the present invention, the metal types of the electroplating solution include: single-layer plating of Au, Ag, Ni, Sn, Cu, Pd, Rh, Pt; alloy plating of binary alloy metals of Au-Ni, Pd-Ni, Ni-P, W-Ni, Ag-Sn, Au-Sn, and Rh-Ru.

[0036] In a second aspect, the present invention provides a system for constructing an electrolysis device model based on a mosaic structure, for implementing a method for constructing the electrolysis device model, the system comprising: a mosaic structure electrolysis device system and a mosaic structure electrolysis device intelligent control system;

[0037] Wherein, the mosaic structure electrolysis device system includes:

[0038] The open electrolysis mold includes an inlaid electrolysis anode and a mold fixing plate for setting the inlaid electrolysis anode. The mold fixing plate is provided with a special fixing opening for the inlaid electrolysis anode; the mold fixing plate is also used to bear the conductive carrier;

[0039] Inlaid electrolytic anode, including electrolytic anode device, the hollow cross-sectional area of ​​the electrolytic anode device for the electroplating solution injection outlet S 阳极 The shape and area of ​​the local plating area of ​​semiconductor electronic components S 镀区 coincide with each other;

[0040] The embedded electrolysis device includes an open electrolysis mold and an electrolysis device accessory. The embedded electrolysis device is used to calculate the cross-sectional area of ​​the electrolysis anode device jet outlet obtained by the selected embedded electrolysis anode jet outlet shape. S 阳极, as a standard set value for actual testing;

[0041] Electrolytic device accessories, including electroplating tank, pump circulating filtration system with electroplating solution and flow meter attached, electrolysis power supply;

[0042] The inlaid structure electrolytic device intelligent control system comprises:

[0043] The open mold control module is used to obtain the standard size of the open electrolytic mold to accommodate the inlaid electrolytic anode device.

[0044] The inlaid anode control module is used to obtain the electrolytic anode device jet outlet area under the specified reference temperature condition of the electrolytic anode device. S 基准阳极 And the local plating area of the semiconductor electronic component S 基准镀区 ;

[0045] The electrolytic device control module is used to detect and regulate the electroplating solution temperature, pump circulating filtration setting parameters and electrolysis power supply setting values in real time, and to detect the electrolytic anode device jet outlet area in real time under the condition of maintaining all setting conditions stable. S 实测阳极 And the local plating area of the semiconductor electronic component S 实测镀区 ;

[0046] The model discrimination module is used to discriminate the electrolytic anode device jet outlet area S 实测阳极 And the local plating area of the semiconductor electronic component S 实测镀区 , the result of formula 1 is implemented to discriminate, the data meeting formula 1 is trained in the model training system to optimize the measured data; the data not meeting formula 1 is recalculated and corrected according to the jet outlet area of the electrolytic anode device to obtain the jet outlet area of the electrolytic anode device under the specified reference temperature condition after correction S 基准阳极 , as a standard set value for actual testing again; if the detection data still cannot meet formula 1 through cyclic training and actual testing, it will be discarded;

[0047] The model training system is used to train the data S 实测阳极 And the local plating area of the semiconductor electronic component S 实测镀区 to realize the construction of the optimized electrolytic device model based on the inlaid structure.

[0048] In a third aspect, the present invention provides a computer-readable storage medium storing computer instructions, wherein the computer instructions are executed by a processor to perform the method described above.

[0049] In a fourth aspect, the present invention provides a computer program product, wherein the computer program product stores computer instructions, and the computer instructions are executed by a processor to perform the method described.

[0050] The beneficial effects of the present invention are:

[0051] The organic fusion of Formulas 1-6 in the method for constructing an electrolysis device model based on a mosaic structure provided by the present invention and Formula 7 on fluid continuous fluidity, momentum conservation and energy conservation creates the energy conservation calculation formula 8 of the mosaic structure electrolysis device constructed by the present invention. The method can quickly obtain selectively adjustable mosaic electrolysis anode jet outlet sizes, and can accurately electroplate and process selectively adjustable electrolysis anodes, electroplating devices and electroplating methods for local plating areas of various high-end semiconductor electronic components. This achieves that by simply replacing mosaic electrolysis anodes of different sizes with electrolysis mold mosaic combinations, it can be used for semiconductor electronic component products in different electroplating areas, and can also accurately and quickly obtain electrolysis device models based on mosaic structures for local plating areas of various different semiconductor electronic components. BRIEF DESCRIPTION OF THE DRAWINGS

[0052] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0053] Figure 1 It is a structural schematic diagram of the electroplating mold provided by the present invention.

[0054] Figure 2 It is a structural schematic diagram of the electrolysis anode device provided by the present invention.

[0055] Figure 3 It is a structural schematic diagram of an open electroplating mold embedded with an electrolytic anode device provided by the present invention.

[0056] Figure 4 It is a structural schematic diagram of a local electroplating area of ​​a semiconductor electronic component provided by the present invention.

[0057] Figure 5 It is a schematic structural diagram of a local nickel-plated area of ​​a semiconductor electronic component provided by the present invention.

[0058] Figure 6 It is a structural schematic diagram of a local gold-plated area of ​​a semiconductor electronic component provided by the present invention.

[0059] Figure 7 This is a composition diagram of a construction system for an electrolysis device model based on a mosaic structure provided by the present invention.

[0060] In the figure: 100, mosaic structure electrolysis device system; 200, mosaic structure electrolysis device intelligent control system; 500a, electrolysis mold; 500b, open electrolysis mold; 510, through-port; 600, mosaic electrolysis anode; 610, electrolysis anode device; 700, mosaic electrolysis device; 800, electrolysis device accessories; 900, open mold control module; 1000, mosaic anode control module; 1100, electrolysis device control module; 1200, model discrimination module; 1300, model training system. DETAILED DESCRIPTION

[0061] The technical solution of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the embodiments described are only some embodiments of the present invention, not all embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0062] Example 1:

[0063] like Figures 1 to 4 As shown, this embodiment provides a method for constructing an electrolysis device model based on a mosaic structure, comprising:

[0064] Step 1: Providing a mosaic electrolysis device 700, the mosaic electrolysis device 700 comprising an electrolysis mold 500a, the electrolysis mold 500a having a plurality of openings 510, each of which is embedded with an electrolysis anode device 610 for spraying an electroplating solution onto a localized plating area of ​​a semiconductor electronic component to provide power for electrolytic plating;

[0065] Step 2: After the electrolytic anode device 610 is embedded in each opening 510 of the electrolytic mold 500a, an open electrolytic mold 500b for assembling the embedded electrolytic device 700 is formed. The hollow cross-sectional area of ​​the electrolytic anode device 610 is consistent with the shape and area of ​​the local plating area of ​​the semiconductor electronic component;

[0066] Step 3: placing the semiconductor electronic component to be electrolytically plated at a predetermined position of the embedded electrolysis device 700;

[0067] Step 4: Calculate the cross-sectional area of ​​the ejection outlet of the electrolysis anode device 610 S 阳极 , and the local plating area of ​​semiconductor electronic components S 镀区 ;

[0068] Step 5: Based on the thermal expansion coefficient of metal materials α The equations are used to construct computational models of electrolytic anode devices and local plating area computational models of semiconductor electronic components;

[0069] Step 6: Based on the electrolytic anode device calculation model of step 5, the electrolytic anode device 610 in step 4 is simulated and optimized to obtain the simulated cross-sectional area of ​​the injection outlet. S 模拟阳极 , and the simulated area of ​​the local plating area of ​​semiconductor electronic components S 模拟镀区 ;

[0070] Step 7: Based on the local plating area of ​​the semiconductor electronic component in step 6, the side length of the square local plating area L 镀区 satisfy L 最小标准 ≤ L 镀区 ≤ L 最小标准 +0.05mm requirement, where L 最小标准 The minimum size of the local plating area of ​​the semiconductor electronic component is obtained by S 模拟阳极 and S 模拟镀区 Applied to high-end plating equipment modules for testing to obtain actual S 实测阳极 and S 实测镀区 ;

[0071] Step 8: Compare S 实测阳极 and S 实测镀区 , if:

[0072] S 实测镀区 ≤ S 实测阳极 ≤ S 实测镀区 + 0.05mm formula 1

[0073] Then confirm that the electrolysis device model of the mosaic structure is applicable; otherwise, the actual S 实测阳极 and S 实测镀区 As a benchmark, correct S 模拟阳极 and S 模拟镀区 And loop steps 4 to 8 until the conditions of formula 1 are met.

[0074] Optionally, the metal material of the embedded electrolytic anode device 610 includes titanium, titanium plated with platinum, and stainless steel. The choice depends on the characteristics of the electroplating solution. Depending on the electroplating solution process requirements, some anode metal surfaces may require precious metal plating. In this embodiment, titanium plated with platinum is used for gold plating. Platinum plating of the titanium of the electrolytic anode device 610 does not require plating of the entire open electrolytic mold 500b; only the electrolytic anode device 610 needs to be plated.

[0075] The inlaid electrolytic anode device 610 needs to be plated with a precious metal platinum layer on the surface of the metal titanium; the inlaid electrolytic device 700 provided by the present invention has an open electrolytic mold 500b that not only has a universal function for semiconductor electronic components with similar structures, but also innovates the existing technology of requiring the entire electrolytic mold to be plated with precious metals. By only plating the electrolytic anode device 610, the electrolytic mold can be partially plated, saving expensive platinum precious metal plating raw materials; at the same time, the open electrolytic mold 500b of the present invention can be universally used within a certain range. For various products of semiconductor electronic components with different electroplating areas, it is only necessary to redesign and manufacture the inlaid electrolytic anode device 610 and inlay it with the universal open electrolytic mold 500b to obtain electrolytic molds for different electroplating areas.

[0076] Optionally, in step 4, the cross-sectional area of ​​the ejection outlet of the electrolysis anode device 610 is calculated by formula 2: S 阳极 :

[0077] S 阳极 = L 阳极 × D 阳极 Formula 2

[0078] Where: L 阳极 is the length of the ejection outlet of the electrolysis anode device 610, dm; D 阳极 is the width of the ejection outlet of the electrolysis anode device 610, dm;

[0079] The local plating area of ​​the semiconductor electronic component is calculated by formula 3 S 镀区 :Among them n rectangular localized plating areas, and m Circular local plating area:

[0080] S 镀区 =( L 镀区 × D 镀区)× n+ r 2 π × m Formula 3

[0081] Where: L 镀区 is the length of the rectangular local plating area, dm; D 镀区 is the width of the rectangular local plating area, dm; r is the radius of the circular local plating area, dm.

[0082] Optionally, step 5 specifically includes: selecting a metal material according to the electrolytic anode device 610, and simulating the thermal expansion coefficient of the metal material based on the electrolytic anode device calculation model, as shown in Formula 4:

[0083] α 阳极 = (Δ S 阳极 / Δ T ) / S 基准阳极 Formula 4

[0084] Where: α 阳极 is the thermal expansion coefficient of the anode metal; ΔS 阳极 is the area change of the ejection outlet of the electrolysis anode device 610 as the temperature changes, that is, ΔS 阳极 = S 实测阳极 - S 基准阳极 ; Δ T Specific temperature set for the plating solution T 特定温度 With reference temperature T 基准温度 Change value, that is ΔT = T 特定温度 - T 基准温度 ; S 基准阳极 At the reference temperature T 基准温度 The cross-sectional area of ​​the injection outlet of the electrolysis anode device 610 under the conditions.

[0085] The reference temperature in Formula 4 T 基准温度 Select 25°, under this reference temperature condition, the cross-sectional area of ​​the ejection outlet of the electrolytic anode device 610 is S 基准阳极, by accurately testing its length and width, it can be calculated using Formula 2; similarly, during the electroplating process of the embedded electrolytic device 700, the specific temperature set for the electroplating solution used T 特定温度 is a known fixed temperature, that is, the temperature change value ΔT In addition, after the actual precious metal plating operation of the semiconductor electronic components by the embedded electrolysis device 700 of the present invention, the measured cross-sectional area of ​​the electrolytic anode device 610 ejection outlet S 实测阳极 , can be obtained by accurately testing the local plating area of ​​semiconductor electronic components. Therefore, the area change of the ejection outlet of the electrolytic anode device 610 with temperature change ΔS 阳极 It can also be calculated that under the precious metal plating conditions of the embedded electrolytic device 700 of the present invention, its thermal expansion coefficient is α 阳极 It can be calculated according to formula 4.

[0086] Furthermore, the step 5 further includes: selecting a metal material according to the semiconductor electronic component, and simulating the thermal expansion coefficient of the metal material based on a calculation model of a local plating area of ​​the semiconductor electronic component, as specifically shown in Formula 5;

[0087] α 镀区 = (Δ S 镀区 / Δ T ) / S 基准镀区 Formula 5

[0088] Where: α 镀区 is the thermal expansion coefficient of the metal of the semiconductor electronic component; ΔS 镀区 is the area change of the local plating area of ​​the semiconductor electronic component as the temperature changes, that is, ΔS 镀区 = S 实测镀区 - S 基准镀区 ; Δ T A specific temperature set for the plating solution T 特定温度 With reference temperature T 基准温度 Change value, that is ΔT = T 特定温度 - T 基准温度 ; S 基准镀区 At the reference temperature T 基准温度The local plating area of ​​semiconductor electronic components under certain conditions.

[0089] It is worth noting that in Formula 5, since the semiconductor electronic component and the electrolysis anode device 610 are both in the embedded electrolysis device 700, their reference temperature is T 基准温度 and specific temperature T 特定温度 Same as that of the electrolysis anode device 610.

[0090] In addition, the structure of semiconductor electronic components is complex, and the effective electroplating areas of various shapes within the local plating area need to be calculated using Formula 3.

[0091] Furthermore, the same processing method as that of the electrolytic anode device 610 is used to obtain the corresponding S 基准镀区 and S 实测镀区 The local plating area is measured under specific temperature conditions according to the requirements of the local plating accuracy of semiconductor electronic components. S 实测镀区 Must be greater than or equal to the area at the reference temperature of 25° S 基准镀区 ,Right now:

[0092] S 基准镀区 ≤ S 实测镀区 ≤ S 基准镀区 + 0.05mm

[0093] Another way to express it is:

[0094] 0≤ S 实测镀区 - S 基准镀区 ≤ 0.05mm

[0095] 0≤ Δ S 镀区 ≤ 0.05mm formula 6

[0096] The method for constructing the electrolytic device model of the mosaic structure (Formulas 1-6), the flow rate of the electroplating solution of the mosaic electrolytic device 700, and especially the flow path formed by the morphology of the embedded electrolytic anode device 610 in the electrolytic mold, have a significant impact on the quality of the metal coating on the local plating area of ​​the semiconductor electronic component; the formulas for continuous fluid flow, momentum conservation, and energy conservation under normal conditions are:

[0097] Formula 7

[0098] Among them, in the formula 7, is the fluid density, and is the velocity component, For time, and is the spatial coordinate, For pressure, is the stress tensor, is the gravity component.

[0099] Under the operating conditions of the embedded electrolysis device 700 of the present invention, the continuous flowability, momentum conservation and energy conservation laws of the electroplating solution fluid are obtained by simulating the production conditions of the embedded electrolysis device 700 under the reference temperature conditions of Formulas 1 to 6, and the results of plating a metal layer on the local plating area of ​​the semiconductor electronic component are used to confirm the accuracy of the continuous flowability, momentum conservation and energy conservation of the electroplating solution, that is, the electroplating solution flow rate set by the embedded electrolysis device 700 u 电镀溶液 Speed ​​with Formula 7 and The resulting speed loss can be corrected by the correction factor associated with the embedded electrolysis device 700 of the present invention in Formula 8;

[0100] Formula 8

[0101] In formula 7 and formula 8, express The differential term of fluid diffusion at time t, express The differential term of the viscous kinetic energy of continuous flow in the direction, the right side of the equal sign is the specific expansion; express The compression and expansion differential term in the direction, express The differential term of the fluid stress in the direction, represents the gravity component of the fluid; is the electromagnetic force term.

[0102] In formula 8, is the correction factor for the flow loss of the electroplating solution fluid in the mosaic electrolysis device 700 of the present invention.

[0103] In formula 8, due to the energy non-conservation caused by the speed loss during the electroplating solution delivery process of the present invention, the correction coefficient can be set based on the actual measurement results of formulas 1 to 6 related to the embedded electrolysis device 700. , to achieve a stable balance that maintains the continuous fluidity of the fluid, conservation of momentum and conservation of energy.

[0104] Optionally, step 8 further includes discarding the corrected data that still does not satisfy formula 7 and formula 8 after multiple cycles of optimization.

[0105] Optionally, the metal types of the electroplating solution include: single-layer plating of Au, Ag, Ni, Sn, Cu, Pd, Rh, Pt; alloy plating of binary alloy metals of Au-Ni, Pd-Ni, Ni-P, W-Ni, Ag-Sn, Au-Sn, Rh-Ru.

[0106] Example 2:

[0107] like Figure 7 As shown, this embodiment provides a system 300 for constructing an electrolysis device model based on a mosaic structure, which is used to implement the method for constructing an electrolysis device model based on a mosaic structure. The system includes: a mosaic structure electrolysis device system 100 and a mosaic structure electrolysis device intelligent control system 200;

[0108] The mosaic electrolysis device system 100 includes:

[0109] The open electrolytic mold 500b includes an embedded electrolytic anode 600 and a mold fixing plate for mounting the embedded electrolytic anode 600. The mold fixing plate has a dedicated fixing opening 510 for embedding the electrolytic anode 600. The mold fixing plate is also used to bear the conductive carrier.

[0110] The embedded electrolytic anode 600 includes an electrolytic anode device 610, and the hollow cross-sectional area of ​​the electrolytic anode device 610 is used for the electroplating solution injection outlet. S 阳极 The shape and area of ​​the local plating area of ​​semiconductor electronic components S 镀区 coincide with each other;

[0111] The embedded electrolysis device 700 includes an open electrolysis mold 500b and an electrolysis device accessory 800. The embedded electrolysis device 700 is used to calculate the cross-sectional area of ​​the jet outlet of the electrolysis anode device 610 obtained by the shape of the jet outlet of the selected embedded electrolysis anode 600. S 阳极 , used as the standard setting value for actual testing;

[0112] Electrolysis device accessories 800, including an electroplating tank, a pump circulation and filtration system with a flow meter for delivering the electroplating solution, and an electrolysis power supply;

[0113] The intelligent control system 200 of the mosaic electrolysis device includes:

[0114] The open mold control module 900 is used to calculate various parameters of the open electrolytic mold 500b and various data of the electrolytic anode device 610 using Formula 2 and Formula 3 to obtain the standard size of the opening 510 of the open electrolytic mold 500b for accurately accommodating and embedding the electrolytic anode device 610;

[0115] The embedded anode control module 1000 is used to calculate various parameters of the electrolytic anode device 610 and various characteristic data of semiconductor electronic components through formula 2, formula 3, formula 4 and formula 5 to obtain the ejection outlet area of ​​the electrolytic anode device 610 under the predetermined reference temperature condition of the electrolytic anode device 610. S 基准阳极 and local plating area of ​​semiconductor electronic components S 基准镀区 ;

[0116] The electrolysis device control module 1100 is used to monitor and control the plating solution temperature, pump circulation filter setting parameters, and electrolysis power setting value in real time. It is used to monitor the ejection outlet area of ​​the electrolysis anode device 610 in real time while maintaining all setting conditions stable. S 实测阳极 and local plating area of ​​semiconductor electronic components S 实测镀区 ;

[0117] Model identification module 1200, for real-time detection of the ejection outlet area of ​​electrolysis anode device 610 S 实测阳极 and local plating area of ​​semiconductor electronic components S 实测镀区 , the result of formula 1 is used for judgment, and the data that meets formula 1 enters the model training system 1300 for training, optimizes the measured data, and improves the ejection outlet area of ​​the electrolytic anode device 610 S 实测阳极 On the contrary, if the data does not meet the requirements of formula 1, the ejection outlet area of ​​the electrolytic anode device 610 is recalculated and corrected to obtain the ejection outlet area of ​​the electrolytic anode device 610 under the corrected reference temperature conditions. S 基准阳极 , and then conduct actual testing again as the standard setting value; if the test data still cannot meet the requirements of Formula 1 after cyclic training and actual testing, it will be discarded;

[0118] Model training system 1300, used to judge qualified S 实测阳极 and local plating area of ​​semiconductor electronic components S 实测镀区 The data is trained to build an optimized electrolysis device model based on mosaic structure.

[0119] Example 3:

[0120] The experimental piece of the local plating area of ​​the semiconductor electronic component to be processed in this embodiment is as follows Figure 4 As shown in the figure, the copper alloy material is 60×60mm and the thickness is 0.127mm; there are 16 basic units in total. Figure 5 The gold plated area of ​​each unit shown is 10, with dimensions of 11.5 mm x 11.5 mm, and its area is 132.25 mm 2 ; The total area of ​​nickel-plated double sides of a semiconductor electronic component is 16×132.25×2=4232mm 2 In addition, Figure 6 The gold plated area of ​​each unit is shown as 20, the actual minimum dimension of the line L 最小标准 is 5.800mm, and the maximum dimension of the tolerance dotted line is L 最小标准 +0.05mm, that is, 5.800mm+0.050mm, so 5.800≤ L 镀区 ≤5.850mm, the total area of ​​the gold-plated single side of the square semiconductor electronic component is 33.6400≤ S 镀区 ≤34.2225mm 2 .

[0121] The center position of the plating area detection of the semiconductor electronic component plating area in this embodiment is as follows: Figure 3 and Figure 6 The coordinates of the black point ●21 in the center of the chemical plating area of ​​each semiconductor plating unit are: 4 (14.6, 7.3), 3 (14.6, 21.9), 2 (14.6, 36.5), 1 (14.6, 51.1) in column A; 4 (21.9, 7.3), 3 (21.9, 21.9), 2 (21.9, 36.5), 1 (21.9, 51.1) in column B; 4 (36.5, 7.3), 4 (36.5, 21.9), 2 (36.5, 36.5), 1 (36.5, 51.1) in column C; 4 (51.1, 7.3), 3 (51.1, 21.9), 2 (51.1, 36.5), 1 (51.1, 51.1) in column D.

[0122] Based on Figure 3 The design drawings of the semiconductor electronic components shown have electroplating specifications of: 1.5μm≤nickel plating≤3.5μm, and the thickness of the gold plating on the outermost surface 0.3μm≤0.7μm. In the data processing of the plating thickness of the plated parts below, the data of the bottom nickel plating are not summarized and discussed, and only the surface gold plating area is specifically analyzed.

[0123] Test 1

[0124] The area of ​​each local gold plating of semiconductor electronic components S 基准镀区 33.6400mm 2 Therefore, the design of the electrolytic anode device 610 ejection outlet is 5.806mm × 5.806mm, then the ejection outlet area S 基准阳极 33.710mm 2 ;

[0125] The thickness of the nickel plating layer is based on the center value of 2.5μm in the design drawing range, and the thickness of the gold plating layer is based on the center value of 0.5μm in the design drawing range. The obtained electroplating time and current intensity are used as production and processing conditions, and the embedded electrolysis device 700 of the present invention is used to implement the plating treatment.

[0126] The obtained test 1 electroplated plated parts were measured using the KEYENCE high-precision 3D scanning measuring instrument VL-600 for the local gold-plated samples of semiconductor electronic components. The plating area data S 实测镀区 As shown in Table 1.

[0127] Table 1 Test data of local gold plating area

[0128]

[0129] From Table 1, we can see that the side length of the square jet outlet of the embedded electrolytic anode is L 阳极 The minimum area of ​​16 local plating areas of semiconductor electronic components under the condition of 5.802mm S 镀区 33.715mm 2 ; Larger than the ejection outlet area shown in the product drawing S 基准阳极 33.710mm 2 ; Max-Min is 0.006mm with excellent precision; Area error is based on the minimum area Min under test 1 conditions S 镀区 and the maximum area Max S 镀区 , and drawing standards L 阳极 The area of ​​5.800mm is 33.640mm 2 The ratio of the difference between S 镀区 - S 基准镀区 ) / S 基准镀区 and (MaxS 镀区 - S 基准镀区 ) / S 基准镀区 The test results are 0.22% to 0.24% with a good error range.

[0130] Based on all the relevant measured data obtained in Test 1, the training standard operation is performed through Formulas 1 to 8 of the electrolysis device model based on the mosaic structure of the present invention. Under the condition of the reference temperature of 25°, the square jet outlet area of ​​the mosaic electrolysis anode is obtained as a function of its length. L 阳极 Standard data varies depending on the S 基准阳极 As shown in Table 2.

[0131] Table 2 Local standard data

[0132]

[0133] Furthermore, in Test 1, the set temperature of the gold plating solution is 45°. The embedded electrolytic anode and the local plating area of ​​the semiconductor electronic component in the embedded electrolytic device 700 operating at this temperature will be affected by thermal expansion, causing the area of ​​the square jet outlet of the embedded electrolytic anode and the area of ​​the local plating area of ​​the semiconductor electronic component to increase to varying degrees. Under the 45° condition, the gold plating area of ​​the local plating area truly records the result of the electrolytic gold plating of the jet outlet of the thermally expanded electrolytic anode device 610 and the local plating area of ​​the semiconductor electronic component under the thermal expansion state. Therefore, the test result of the electrolytic gold plating area read locally on the semiconductor electronic component, ignoring the influence of thermal expansion caused by temperature changes, can be equivalent to the actual measured area of ​​the jet outlet of the electrolytic anode device 610 under the thermal expansion state. S 实测阳极 , that is, the difference between the measured area at test 1 temperature condition 45° and the reference temperature 25° is △S 阳极 = S 实测阳极 - S 基准阳极 .

[0134] According to the actual data obtained from Test 1, the training operation was performed using Formulas 1 to 8 of the electrolysis device model of the mosaic structure of the present invention. Under the simulated measured temperature of 45°, the area of ​​the square jet outlet of the mosaic electrolysis anode was obtained as a function of its length. L 阳极 Simulated area data that varies with the S 模拟阳极, and the area difference before and after temperature change △S 阳极 ,The detailed simulation results are shown in Table 3.

[0135] Table 3 Local simulation data

[0136]

[0137] As shown in Table 3, based on the actual data of Test 1, the training simulation operation is carried out by using Formulas 1 to 8 of the electrolysis device model based on the mosaic structure of the present invention. Under the test temperature of 45°, the area of ​​the square jet outlet of the mosaic electrolysis anode is obtained as a function of its length. L 阳极 Standard data varies depending on the S 阳极 It has a good thermal expansion trend, simulating the side length of the square of the embedded electrolytic anode in 1 to 11 L 阳极 The simulated ejection port area increases from 5.800mm to 5.85mm. S 模拟阳极 Range from 33.6579 to 34.2998 mm 2 ; The side length of the standard square of the local plating area of ​​the product drawing listed in Table 2 L 镀区 The increase from 5.800mm to 5.850mm corresponds to the ejection port area at the reference temperature of 25°. S 基准镀区 Range: 33.6400~34.2225mm 2 Comparison, the results of simulations 2 to 10 and the result of test 1 are all under the reference temperature of 25° under the condition of the ejection port area. S 基准镀区 Therefore, it is necessary to further confirm the side length of the square between simulation 1 and simulation 2. L 镀区 Is it within the range? Also, the side length of the square between simulation 10 and simulation 11 needs to be confirmed. L 镀区 Is it within the range?

[0138] Test 2 sets the side length of the square local plating area L 镀区 5.798mm;

[0139] Test 3 sets the side length of the square local plating area L 镀区 5.847mm;

[0140] The plating conditions and test methods of plated samples in Test 2 and Test 3 are the same as those in Test 1. The plating area data are S 实测镀区 As shown in Table 4.

[0141] Table 4 Local gold plating area test data

[0142]

[0143] As shown in Table 4, the side length of the square jet outlet of the embedded electrolytic anode in test 2 is L 阳极 Under the conditions, the minimum area of ​​the local plating area is Min S 镀区 33.6395mm 2 , smaller than the ejection outlet area shown in the product drawing S 基准阳极 33.640mm 2 ; At the same time, its minimum area error is -0.0015%, so it is confirmed L 阳极 When it is 5.798mm, it cannot meet the standard requirements of the local plating area in the product drawing.

[0144] Further, the side length of the square jet outlet of the embedded electrolytic anode was tested in 3. L 阳极 Under the conditions, the minimum area of ​​the local plating area is Max S 镀区 34.2215mm 2 , Min S 镀区 34.2123mm 2 ; All meet the requirements of the product drawings and the ejection outlet area does not exceed the upper limit S 基准阳极 34.2225mm 2 Standards and, with the drawing standards L 阳极 The area of ​​5.800mm is 33.640mm 2 The ratio of the difference between S 镀区 - S 基准镀区 ) / S 基准镀区 and (Max S 镀区 - S 基准镀区 ) / S 基准镀区 , the test results are 0.22% to 0.24% with a good error range; therefore, it is confirmed L 阳极When it is 5.847mm, it can meet the standard requirements of the local plating area of ​​the product drawing.

[0145] From the results of tests 1 to 3, we can see that according to the local plating area standard of semiconductor electronic component product drawings, the local plating area side length standard of a square is 5.800mm≤ L 镀区 ≤5.850mm, taking into account the thermal expansion factors of the semiconductor electronic component product material and the embedded electrolytic anode material, the side length of the embedded electrolytic anode square injection outlet can be 5.800mm≤ L 阳极 ≤5.847mm, in order to ensure that the electrolytic gold plating area of ​​the local plating area of ​​the semiconductor electronic component product meets the design standard requirements after actual electrolytic treatment.

[0146] In summary, through the method for constructing an electrolysis device model based on a mosaic structure provided in Example 1 and the system for constructing an electrolysis device model based on a mosaic structure provided in Example 2, the processes and results of tests 1 to 3 implemented, the organic integration of formulas 1 to 6 in the method for constructing an electrolysis device model based on a mosaic structure provided in the present invention with formula 7 on fluid continuous fluidity, momentum conservation, and energy conservation, has created the energy conservation calculation formula 8 of the mosaic structure electrolysis device constructed by the present invention, which can quickly obtain a selectively adjustable mosaic electrolysis anode jet outlet size, and can accurately electroplate and process the local plating areas of various high-end semiconductor electronic components. The selectively adjustable electrolysis anode, electroplating device, and electroplating method achieve that by simply replacing the mosaic electrolysis anode of different sizes with the electrolysis mold mosaic combination, it can be used for semiconductor electronic component products in different electroplating areas, and can also accurately and quickly obtain electrolysis device models based on mosaic structures for local plating areas of various different semiconductor electronic components.

[0147] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. These modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the various embodiments of the present invention, and should all be included in the scope of protection of the present invention.

Claims

1. A method for constructing an electrolysis device model based on a mosaic structure, characterized in that: include: Step 1: providing an inlaid electrolysis device (700), wherein the inlaid electrolysis device (700) comprises an electrolysis mold (500a), wherein the electrolysis mold (500a) is provided with a plurality of openings (510), and an electrolysis anode device (610) is inlaid in each opening (510); Step 2: After embedding an electrolytic anode device (610) in each opening (510) of the electrolytic mold (500a), an open electrolytic mold (500b) for assembling the embedded electrolytic device (700) is formed, wherein the hollow cross-sectional area of ​​the electrolytic anode device (610) matches the shape and area of ​​the local plating area of ​​the semiconductor electronic component; Step 3: placing the semiconductor electronic component to be electrolytically plated at a predetermined position of the embedded electrolysis device (700); Step 4: Calculate the cross-sectional area of ​​the ejection outlet of the electrolysis anode device (610) S 阳极 , and the local plating area of ​​semiconductor electronic components S 镀区 ; Step 5: Based on the thermal expansion coefficient of metal materials α The equations are used to construct computational models of electrolytic anode devices and local plating area computational models of semiconductor electronic components; Step 6: Based on the electrolytic anode device calculation model of step 5, the electrolytic anode device (610) in step 4 is simulated and optimized to obtain the simulated cross-sectional area of ​​the injection outlet. S 模拟阳极 , and the simulated area of ​​the local plating area of ​​semiconductor electronic components S 模拟镀区 ; Step 7: Based on the local plating area of ​​the semiconductor electronic component in step 6, the side length of the square local plating area L 镀区 satisfy L 最小标准 ≤ L 镀区 ≤ L 最小标准 +0.05mm requirement, where L 最小标准 The minimum size of the local plating area of ​​the semiconductor electronic component is obtained by S 模拟阳极 and S 模拟镀区 Applied to high-end plating equipment modules for testing to obtain actual S 实测阳极 and S 实测镀区 ; Step 8: Compare S 实测阳极 and S 实测镀区 , if: S 实测镀区 ≤ S 实测阳极 ≤ S 实测镀区 +0.05mm formula 1 Then confirm that the electrolysis device model of the mosaic structure is applicable; otherwise, the actual S 实测阳极 and S 实测镀区 As a benchmark, correct S 模拟阳极 and S 模拟镀区 And loop steps 4 to 8 until the conditions of formula 1 are met.

2. The method for constructing an electrolysis device model according to claim 1, wherein: In step 4, the cross-sectional area of ​​the ejection outlet of the electrolysis anode device (610) is calculated by formula 2. S 阳极 : S 阳极 = L 阳极 × D 阳极 Formula 2 Where: L 阳极 is the length of the ejection outlet of the electrolysis anode device (610), dm; D 阳极 is the width of the ejection outlet of the electrolysis anode device (610), dm; The local plating area of ​​the semiconductor electronic component is calculated by formula 3 S 镀区 :Among them n rectangular localized plating areas, and m Circular local plating area: S 镀区 =( L 镀区 × D 镀区 ) × n+ r 2 π × m Formula 3 Where: L 镀区 is the length of the rectangular local plating area, dm; D 镀区 is the width of the rectangular local plating area, dm; r is the radius of the circular local plating area, dm.

3. The method for constructing an electrolysis device model according to claim 2, wherein: The step 5 specifically includes: selecting the metal material of the electrolytic anode device (610), and simulating the thermal expansion coefficient of the metal material based on the electrolytic anode device calculation model. α 阳极 : α 阳极 = (Δ S 阳极 / Δ T ) / S 基准阳极 Formula 4 Where: α 阳极 is the thermal expansion coefficient of the anode metal; ΔS 阳极 is the area change of the ejection outlet of the electrolysis anode device (610) as the temperature changes, ΔS 阳极 = S 实测阳极 - S 基准阳极 ; Δ T Specific temperature set for the plating solution T 特定温度 With reference temperature T 基准温度 Change value, ΔT = T 特定温度 - T 基准温度 ; S 基准阳极 At the reference temperature T 基准温度 The cross-sectional area of ​​the injection outlet of the electrolysis anode device (610) under the conditions.

4. The method for constructing an electrolysis device model according to claim 3, wherein: The step 5 also includes: selecting the metal material of the semiconductor electronic component and simulating the thermal expansion coefficient of the metal material based on the local plating area calculation model of the semiconductor electronic component. α 镀区 : α 镀区 = (Δ S 镀区 / Δ T ) / S 基准镀区 Formula 5 Where: α 镀区 is the thermal expansion coefficient of the metal of the semiconductor electronic component; ΔS 镀区 is the area change of the local plating area of ​​the semiconductor electronic component as the temperature changes, that is, ΔS 镀区 = S 实测镀区 - S 基准镀区 ; Δ T Specific temperature set for the plating solution T 特定温度 With reference temperature T 基准温度 Change value, ΔT = T 特定温度 - T 基准温度 ; S 基准镀区 At the reference temperature T 基准温度 The local plating area of ​​semiconductor electronic components under the following conditions; in, ΔS 镀区 Satisfy the following formula: 0≤ Δ S 镀区 ≤ 0.05mm formula 6.

5. The method for constructing an electrolysis device model according to claim 4, wherein: The electroplating solution fluid flow loss of the mosaic electrolysis device (700) is corrected by the following formula: Formula 8 in, is the fluid density, and is the velocity component, For time, and is the spatial coordinate, For pressure, is the stress tensor, is the gravity component, express The differential term of fluid diffusion at time t, express The differential term of the viscous kinetic energy of continuous flow in the direction, the right side of the equal sign is the specific expansion; express The compression and expansion differential term in the direction, express The differential term of the fluid stress in the direction, represents the gravity component of the fluid; is the electromagnetic force term; Correction factor for fluid flow loss of the plating solution in a mosaic electrolysis device.

6. The method for constructing an electrolysis device model according to claim 1, wherein: The metal material of the electrolytic anode device (610) includes: titanium, titanium plated with platinum, and stainless steel; wherein, when the electrolytic anode device (610) is titanium plated with platinum, only the electrolytic anode device (610) is plated.

7. The method for constructing an electrolysis device model according to claim 5, wherein: The metal types of the electroplating solution include: single-layer plating of Au, Ag, Ni, Sn, Cu, Pd, Rh, Pt; alloy plating of binary alloy metals of Au-Ni, Pd-Ni, Ni-P, W-Ni, Ag-Sn, Au-Sn, and Rh-Ru.

8. A system for constructing an electrolysis device model based on mosaic structure, characterized in that: A method for constructing an electrolysis device model according to any one of claims 1 to 7, wherein the system comprises: a mosaic structure electrolysis device system (100) and a mosaic structure electrolysis device intelligent control system (200); Wherein, the mosaic structure electrolysis device system (100) comprises: An open electrolysis mold (500b) includes an embedded electrolysis anode (600) and a mold fixing plate for arranging the embedded electrolysis anode (600), the mold fixing plate being provided with a dedicated fixing opening (510) for embedding the electrolysis anode (600); the mold fixing plate is also used to bear a conductive carrier; The embedded electrolytic anode (600) includes an electrolytic anode device (610), and a hollow cross-sectional area of ​​the electrolytic anode device (610) for an electroplating solution ejection outlet. S 阳极 The shape and area of ​​the local plating area of ​​semiconductor electronic components S 镀区 coincide with each other; The embedded electrolysis device (700) comprises an open electrolysis mold (500b) and an electrolysis device accessory (800). The embedded electrolysis device (700) is used to calculate the cross-sectional area of ​​the ejection outlet of the electrolysis anode device (610) obtained by the shape of the ejection outlet of the selected embedded electrolysis anode (600). S 阳极 , used as the standard setting value for actual testing; Electrolysis device accessories (800), including an electroplating tank, a pump circulation and filtration system for conveying electroplating solution and equipped with a flow meter, and an electrolysis power supply; The mosaic structure electrolysis device intelligent control system (200) comprises: An opening mold control module (900) is used to obtain a size standard of the opening (510) of the opening electrolysis mold (500b) to accommodate an embedded electrolysis anode device (610); An embedded anode control module (1000) is used to obtain the ejection outlet area of ​​the electrolysis anode device (610) under a predetermined reference temperature condition of the electrolysis anode device (610). S 基准阳极 and local plating area of ​​semiconductor electronic components S 基准镀区 ; The electrolysis device control module (1100) is used to detect and control the temperature of the electroplating solution, the pump circulation filter setting parameters, and the electrolysis power supply setting value in real time, and is used to detect the ejection outlet area of ​​the electrolysis anode device (610) in real time while maintaining all setting conditions stable. S 实测阳极 and local plating area of ​​semiconductor electronic components S 实测镀区 ; The model discrimination module (1200) is used to detect the ejection outlet area of ​​the electrolytic anode device (610) in real time. S 实测阳极 and local plating area of ​​semiconductor electronic components S 实测镀区 , the result of formula 1 is used for judgment, and the data that meets formula 1 enters the model training system (1300) for training to optimize the measured data; the data that does not meet formula 1 is re-corrected according to the injection outlet area calculation of the electrolytic anode device (610) to obtain the injection outlet area of ​​the electrolytic anode device (610) under the corrected reference temperature condition. S 基准阳极 , and then conduct actual testing again as the standard setting value; if the test data still cannot meet the requirements of Formula 1 after cyclic training and actual testing, it will be discarded; Model training system (1300), used to judge qualified S 实测阳极 and local plating area of ​​semiconductor electronic components S 实测镀区 The data is trained to build an optimized electrolysis device model based on mosaic structure.

9. A computer-readable storage medium, characterized in that The computer-readable storage medium stores computer instructions, and the computer instructions are executed by a processor to perform the method according to any one of claims 1 to 7.

10. A computer program product, characterized in that The computer program product stores computer instructions, and the computer instructions are executed by a processor to perform the method according to any one of claims 1 to 7.

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