Method for detecting semiconductor flaws by using temperature difference contrast ratio
Through the temperature difference contrast detection method, which utilizes a heat source to heat and sense temperature changes, the problem in existing technologies of being unable to detect defects without destroying the semiconductor is solved, thus achieving efficient and non-destructive defect detection.
Patent Information
- Application Number
- CN202410283538.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-03-13
- Publication Date
- 2025-09-16
AI Technical Summary
Existing technology cannot detect defects without destroying the semiconductor.
By using the temperature difference contrast detection method, a heat source is used to heat the semiconductor surface and sense the temperature change. A thermal imager is used to obtain an image and compare the grayscale with a standard semiconductor to determine defects.
It realizes the detection of defects without destroying the semiconductor, improving the detection efficiency and accuracy.
Smart Images
Figure CN120651909A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to a semiconductor detection method, and in particular to a method for detecting semiconductor defects by utilizing temperature difference contrast. Background Art
[0002] Semiconductors are substances or materials with electrical conductivity between that of metallic conductors and insulators. The current method for testing semiconductor defects involves sampling a batch of semiconductors, destroying the target semiconductor by slicing, and then using a scanning electron microscope to examine the bonding accuracy to determine if the target semiconductor has any defects.
[0003] However, there is currently no method for detecting defects in semiconductors without destroying them. Summary of the Invention
[0004] An embodiment of the present invention provides a method for detecting semiconductor defects by using temperature difference contrast, which can detect whether a target semiconductor has defects by using temperature difference contrast without damaging the target semiconductor.
[0005] In order to solve the above technical problems, the present invention adopts the following technical solutions:
[0006] An embodiment of the present invention provides a method for detecting semiconductor defects using temperature contrast, comprising the following steps: obtaining an image of a first surface or a second surface of a standard semiconductor; heating a portion or the entire first surface of a target semiconductor with a heat source, and allowing the portion or the entire first surface of the target semiconductor to absorb heat from the heat source; stopping the heating of the portion or the entire first surface of the target semiconductor, and allowing the portion or the entire first surface of the target semiconductor to diffuse heat toward the portion or the entire second surface of the target semiconductor; using a thermal imager to sense the temperature of the portion or the entire first surface or the portion or the entire second surface of the target semiconductor to obtain an image of the first surface or the second surface of the target semiconductor; and receiving an image of the first surface or the second surface of the standard semiconductor and an image of the first surface or the second surface of the target semiconductor with an inspection unit, and comparing the grayscale of the image of the first surface or the second surface of the standard semiconductor with the image of the first surface or the second surface of the target semiconductor to determine whether the target semiconductor has defects.
[0007] In some embodiments, the step of obtaining an image of the first surface or the second surface of the standard semiconductor further includes: the heat source heats part or all of the first surface of the standard semiconductor, and part or all of the first surface of the standard semiconductor absorbs the heat of the heat source; the heat source stops heating part or all of the first surface of the standard semiconductor, and part or all of the first surface of the standard semiconductor diffuses the heat toward part or all of the second surface of the standard semiconductor; and the thermal imager senses the temperature of part or all of the first surface of the standard semiconductor or the temperature of part or all of the second surface to obtain an image of the first surface or the second surface of the standard semiconductor.
[0008] In some embodiments, the step of the thermal imager sensing the partial or full temperature of the first surface or the partial or full temperature of the second surface of the standard semiconductor further includes: the thermal imager continuously captures partial or full images of the first surface of the standard semiconductor or partial or full images of the second surface of the standard semiconductor to sense the partial or full temperature change of the first surface of the standard semiconductor or the partial or full temperature change of the second surface of the standard semiconductor.
[0009] In some embodiments, the step of determining whether the target semiconductor has defects further includes: compared to the image of the first surface or the second surface of the standard semiconductor, the inspection unit detects that the grayscale of the image of at least one point-shaped area on the first surface of the target semiconductor is darker or detects that the grayscale of the image of at least one point-shaped area on the second surface of the target semiconductor is lighter, so as to determine that the target semiconductor has a defect and the defect is at least one broken wire.
[0010] In some embodiments, the step of determining whether the target semiconductor has defects further includes: compared to the image of the first surface or the second surface of the standard semiconductor, the inspection unit detects that the grayscale of the image of the first surface of the target semiconductor is reduced by at least one point-like area, or detects that the grayscale of the image of the second surface of the target semiconductor is reduced by at least one point-like area, so as to determine that the target semiconductor has defects and the defect is at least one incorrectly made wire or misaligned assembly.
[0011] In some embodiments, the step of determining whether the target semiconductor has defects further includes: compared to the image of the first surface or the second surface of the standard semiconductor, the inspection unit detects that the grayscale of the image of the first surface of the target semiconductor increases by at least one point-like area, or detects that the grayscale of the image of the second surface of the target semiconductor increases by at least one point-like area, so as to determine that the target semiconductor has defects and that the defect is at least one incorrectly made wire or misaligned assembly.
[0012] In some embodiments, the step of determining whether the target semiconductor has defects further includes: compared to the image of the first surface or the second surface of the standard semiconductor, the inspection unit detects that the grayscale of the image of at least one block area on the first surface of the target semiconductor is darker or detects that the grayscale of the image of at least one block area on the second surface of the target semiconductor is lighter, so as to determine that the target semiconductor has a defect and the defect is a non-conducting material that is damaged or an incorrect material ratio.
[0013] In some embodiments, the step of the thermal imager sensing the local or complete temperature of the first surface or the local or complete temperature of the second surface of the target semiconductor further includes: the thermal imager continuously captures the local or complete image of the first surface of the target semiconductor or the local or complete image of the second surface of the target semiconductor to sense the local or complete temperature change of the first surface of the target semiconductor or the local or complete temperature change of the second surface of the target semiconductor.
[0014] In some embodiments, the heating time of the heat source is less than 0.1 seconds and the heating temperature is greater than 50°C.
[0015] In some embodiments, the heat source is a surface light source or a point light source.
[0016] The effectiveness of the present invention lies in that the method of the present invention can detect whether a target semiconductor has defects by using temperature difference contrast without damaging the target semiconductor. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] Figure 1 A flow chart showing a first embodiment of the present invention.
[0018] Figure 2 A schematic diagram showing steps S10 to S30 according to the first embodiment of the present invention.
[0019] Figure 3 Schematic diagram showing steps S40 to S60 according to the first embodiment of the present invention.
[0020] Figure 4 A schematic diagram showing an image of a first surface of a standard die according to a first embodiment of the present invention.
[0021] Figure 5 A schematic diagram showing an image of a first surface of a target die according to a first embodiment of the present invention.
[0022] Figure 6 It is a schematic diagram of the connection relationship between the thermal imager and the inspection unit of the present invention.
[0023] Figure 7 FIG. 1 is a schematic diagram of an image of a first surface of a standard die according to a second embodiment of the present invention.
[0024] Figure 8 FIG. 1 is a schematic diagram of an image of a first surface of a target die according to a second embodiment of the present invention.
[0025] Figure 9 FIG. 1 is a schematic diagram of an image of a first surface of a standard die according to a third embodiment of the present invention.
[0026] Figure 10 FIG. 1 is a schematic diagram of an image of a first surface of a target die according to a third embodiment of the present invention.
[0027] Figure 11 is a schematic diagram of steps S10 to S30 according to the fourth embodiment of the present invention.
[0028] Figure 12 is a schematic diagram of steps S40 to S60 according to the fourth embodiment of the present invention.
[0029] Figure 13 is a flow chart of the fifth embodiment of the present invention.
[0030] Figure 14 FIG. 1 is a schematic diagram of a first cycle of steps S10 to S30 according to the fifth embodiment of the present invention.
[0031] Figure 15 FIG. 1 is a schematic diagram of a first cycle of steps S40 to S60 according to the fifth embodiment of the present invention.
[0032] Figure 16 FIG. 1 is a schematic diagram of the second cycle of steps S10 to S30 according to the fifth embodiment of the present invention.
[0033] Figure 17 FIG. 1 is a schematic diagram of the second cycle of steps S40 to S60 of the fifth embodiment of the present invention.
[0034] Figure 18 2 is a schematic diagram of the third cycle of steps S10 to S30 according to the fifth embodiment of the present invention.
[0035] Figure 19 4 is a schematic diagram of the third cycle of steps S40 to S60 according to the fifth embodiment of the present invention.
[0036] Figure 20 2 is a schematic diagram of a fourth cycle of steps S10 to S30 according to the fifth embodiment of the present invention.
[0037] Figure 21 4 is a schematic diagram of the fourth cycle of steps S40 to S60 according to the fifth embodiment of the present invention.
[0038] Description of the accompanying symbols:
[0039] 10: heat source; 11: surface light source; 12: point light source; 121: infrared heater; 122: convex lens; 20, 20A, 20B: standard grain; 21, 22: wire; 211, 221: first end; 212, 222: second end; 23: point area; 30: thermal imager; 40, 40A, 40B: target grain; 41, 42: wire; 411, 421: first end; 412, 422: second end; 43: point area; 44: block area; 50: inspection unit; S10-S70: steps. DETAILED DESCRIPTION
[0040] To make the technical problems, technical solutions, and advantages to be solved by the present invention more apparent, a detailed description will be given below with reference to the accompanying drawings and specific embodiments. In the following description, specific details such as specific configurations and components are provided solely to facilitate a comprehensive understanding of the embodiments of the present invention. Therefore, it should be clear to those skilled in the art that various changes and modifications may be made to the embodiments described herein without departing from the scope and spirit of the present invention. In addition, for the sake of clarity and brevity, descriptions of known functions and configurations have been omitted.
[0041] It should be understood that references throughout this specification to "one embodiment" or "an embodiment" mean that a particular feature, structure, or characteristic associated with the embodiment is included in at least one embodiment of the present invention. Therefore, the appearances of "in one embodiment" or "in an embodiment" throughout this specification do not necessarily refer to the same embodiment. Furthermore, these particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.
[0042] The present invention provides a method for detecting semiconductor defects using temperature difference contrast, comprising the following steps:
[0043] Step S10, as Figure 1 and Figure 2 As shown, a heat source 10 is a surface light source 11, which is an infrared heater. The infrared heater projects infrared light toward the first ends 211, 221 of a plurality of conductive lines 21, 22 of a standard die 20 (the entire first surface of the standard semiconductor). The infrared light heats the first ends 211, 221 of the conductive lines 21, 22, and the first ends 211, 221 of the conductive lines 21, 22 absorb the heat of the infrared light. Preferably, the infrared heater is a near-infrared heater or a short-wave far-infrared heater.
[0044] Step S20, as Figure 1 and Figure 2As shown, the infrared heater stops projecting infrared rays toward the first ends 211, 221 of the conductive wires 21, 22, and the infrared heater stops heating the first ends 211, 221 of the conductive wires 21, 22. The heat of the first ends 211, 221 of the conductive wires 21, 22 diffuses toward the second ends 212, 222 of the conductive wires 21, 22 (the entire second surface of the standard semiconductor).
[0045] Step S30, as Figure 1 、 Figure 2 and Figure 4 As shown, a thermal imager 30 senses the temperatures of the first ends 211 , 221 of the conductive lines 21 , 22 to obtain an image of the first surface of the standard die 20 .
[0046] Step S40, as Figure 1 and Figure 3 As shown, the infrared heater projects infrared rays toward the first ends 411, 421 of a plurality of wires 41, 42 of a target die 40 (the entire first surface of the target semiconductor), and the infrared rays heat the first ends 411, 421 of the wires 41, 42, and the first ends 411, 421 of the wires 41, 42 absorb the heat of the infrared rays.
[0047] Step S50, as Figure 1 and Figure 3 As shown, the infrared heater stops projecting infrared rays toward the first ends 411, 421 of the wires 41, 42, and the infrared heater stops heating the first ends 411, 421 of the wires 41, 42, and the heat of the first ends 411, 421 of the wires 41, 42 diffuses toward the second ends 412, 422 of the wires 41, 42 (the entire second surface of the target semiconductor).
[0048] Step S60, as Figure 1 、 Figure 3 and Figure 5 As shown, the thermal imager 30 senses the temperatures of the first ends 411 , 421 of the conductive wires 41 , 42 to obtain an image of the first surface of the target die 40 .
[0049] Step S70, as Figure 1 、 Figure 4 、 Figure 5 and Figure 6As shown, an inspection unit 50 receives an image of the first surface of the standard die 20 and an image of the first surface of the target die 40, and compares the grayscale of the image of the first surface of the standard die 20 with the image of the first surface of the target die 40. Compared with the image of the first surface of the standard die 20, the inspection unit 50 detects that the grayscale of the image of the first end 421 of the conductive wire 42 (a dot-shaped area on the first surface of the target semiconductor) is darker, indicating that the temperature of the first end 421 of the conductive wire 42 is higher than the temperature of the first ends 411 of the remaining conductive wires 41, thereby determining that the target die 40 has a defect, and the defect is a broken conductive wire 42.
[0050] Preferably, step S30 further includes: the thermal imager 30 continuously captures images of the first ends 211 , 221 of the conductive wires 21 , 22 to sense temperature changes of the first ends 211 , 221 of the conductive wires 21 , 22 .
[0051] Preferably, step S60 further includes: the thermal imager 30 continuously captures images of the first ends 411 , 421 of the conductive wires 41 , 42 to sense temperature changes of the first ends 411 , 421 of the conductive wires 41 , 42 .
[0052] Preferably, the thermal imager 30 is an infrared thermal imager.
[0053] Preferably, the heating time of the heat source 10 is less than 0.1 seconds, and the heating temperature is greater than 50° C. In other words, the heat source 10 is heated to a high temperature in a short time, thereby achieving the detection purpose.
[0054] The difference between the second embodiment and the first embodiment is that: Step S70, Figure 7 and Figure 8 As shown, compared with the image of the first surface of the standard die 20A, the inspection unit 50 detects that the grayscale of the image of the first surface of the target die 40A is reduced by a dot area 23 and increased by a dot area 43, thereby determining that the target die 40A has a defect and the defect is a wrong wire or assembly misalignment.
[0055] The difference between the third embodiment and the first embodiment is that: Step S70, Figure 9 and Figure 10 As shown, compared with the image of the first surface of the standard die 20B, the inspection unit 50 detects that the grayscale of the image of the block area 44 on the first surface of the target die 40B is darker, so as to determine that the target die 40B has defects and the defects are non-conducting material being damaged or the material ratio being incorrect.
[0056] The fourth embodiment differs from the first embodiment in that: first, step S30, as shown in FIG. Figure 11As shown, the thermal imager 30 senses the temperatures of the second ends 212 and 222 of the wires 21 and 22 to obtain an image of the second surface of the standard die 20; secondly, step S60, as shown Figure 12 As shown, the thermal imager 30 senses the temperatures of the second ends 412 , 422 of the conductive wires 41 , 42 to obtain an image of the second surface of the target die 40 .
[0057] Preferably, step S30 further includes: the thermal imager 30 continuously captures images of the second ends 212 , 222 of the conductive wires 21 , 22 to sense temperature changes of the second ends 212 , 222 of the conductive wires 21 , 22 .
[0058] Preferably, step S60 further includes: the thermal imager 30 continuously captures images of the second ends 412 , 422 of the conductive wires 41 , 42 to sense temperature changes of the second ends 412 , 422 of the conductive wires 41 , 42 .
[0059] In some embodiments, the surface light source 11 is a laser heater.
[0060] The differences between the sixth embodiment and the first embodiment are as follows:
[0061] In the first cycle, if Figure 13 、 Figure 14 and Figure 15As shown, in step S10, the heat source 10 is a point light source 12, and the point light source 12 includes an infrared heater 121 and a convex lens 122. The infrared heater 121 projects infrared light toward the convex lens 122. The convex lens 122 focuses the infrared light and irradiates the first end 211 of one of the wires 21 (a portion of the first surface of a standard semiconductor). The infrared light heats the first end 211 of one of the wires 21, and the first end 211 of one of the wires 21 absorbs the heat of the infrared light. In step S20, The infrared heater 121 stops projecting infrared rays toward the convex lens 122, and the convex lens 122 stops focusing the infrared rays and irradiating the first end 211 of one of the wires 21. The infrared heater 121 and the convex lens 122 stop heating the first end 211 of one of the wires 21, and the heat of the first end 211 of one of the wires 21 diffuses toward the second end 212 of one of the wires 21 (a portion of the second surface of the standard semiconductor). In step S30, the thermal imager 30 senses the first end 211 of the wires 21. The temperature of the first end 211 of one of the wires 21 is measured; in step S40, the infrared heater 121 projects infrared rays toward the convex lens 122, and the convex lens 122 focuses the infrared rays and irradiates the first end 411 of one of the wires 41 (a portion of the first surface of the target semiconductor). The infrared rays heat the first end 411 of one of the wires 41, and the first end 411 of one of the wires 41 absorbs the heat of the infrared rays; in step S50, the infrared heater 121 stops projecting infrared rays toward the convex lens 122. In step S60, the convex lens 122 stops focusing the infrared light and irradiating the infrared light onto the first end 411 of one of the wires 41, the infrared heater 121 and the convex lens 122 stop heating the first end 411 of one of the wires 41, and the heat of the first end 411 of one of the wires 41 diffuses toward the second end 412 of one of the wires 41 (a portion of the second surface of the target semiconductor); and in step S60, the thermal imager 30 senses the temperature of the first end 211 of one of the wires 21.
[0062] In the second cycle, if Figure 13 、 Figure 16 and Figure 17As shown, the difference from the first cycle is that: in step S10, the convex lens 122 focuses the infrared light and irradiates it on the first end 221 of the wire 22 (a part of the first surface of the standard semiconductor), the infrared light heats the first end 221 of the wire 22, and the first end 221 of the wire 22 absorbs the heat of the infrared light; in step S20, the convex lens 122 stops focusing the infrared light and irradiating it on the first end 221 of the wire 22, the infrared heater 121 and the convex lens 122 stop heating the first end 221 of the wire 22, and the heat of the first end 221 of the wire 22 diffuses toward the second end 222 of the wire 22 (a part of the second surface of the standard semiconductor); in step S30, the thermal imager 30 senses the first end 221 of the wire 22. 21; step S40, the convex lens 122 focuses the infrared light and irradiates the first end 421 of the wire 42 (a local portion of the first surface of the target semiconductor), the infrared light heats the first end 421 of the wire 42, and the first end 421 of the wire 42 absorbs the heat of the infrared light; step S50, the convex lens 122 stops focusing the infrared light and irradiating the first end 421 of the wire 42, the infrared heater 121 and the convex lens 122 stop heating the first end 421 of the wire 42, and the heat of the first end 421 of the wire 42 diffuses toward the second end 422 of the wire 42 (a local portion of the second surface of the target semiconductor); and step S60, the thermal imager 30 senses the temperature of the first end 421 of the wire 42.
[0063] In the third cycle, if Figure 13 、 Figure 18 and Figure 19As shown, the difference from the first cycle is that: in step S10, the convex lens 122 focuses the infrared light and irradiates it on the first end 211 of the other one of the wires 21 (a part of the first surface of the standard semiconductor), and the infrared light heats the first end 211 of the other one of the wires 21, and the first end 211 of the other one of the wires 21 absorbs the heat of the infrared light; in step S20, the convex lens 122 stops focusing the infrared light and irradiating it on the first end 211 of the other one of the wires 21, and the infrared heater 121 and the convex lens 122 stop heating the first end 211 of the other one of the wires 21, and the heat of the first end 211 of the other one of the wires 21 diffuses toward the second end 212 of the other one of the wires 21 (a part of the second surface of the standard semiconductor); in step S30, the thermal imager 30 senses the first end 211 of the other one of the wires 21 11; step S40, the convex lens 122 focuses the infrared light and irradiates it on the first end 411 of the other one of the wires 41 (a local part of the first surface of the target semiconductor), the infrared light heats the first end 411 of the other one of the wires 41, and the first end 411 of the other one of the wires 41 absorbs the heat of the infrared light; step S50, the convex lens 122 stops focusing the infrared light and irradiating it on the first end 411 of the other one of the wires 41, the infrared heater 121 and the convex lens 122 stop heating the first end 411 of the other one of the wires 41, and the heat of the first end 411 of the other one of the wires 41 diffuses toward the second end 412 of the other one of the wires 41 (a local part of the second surface of the target semiconductor); and step S60, the thermal imager 30 senses the temperature of the first end 411 of the other one of the wires 41.
[0064] In the fourth cycle, if Figure 13 、 Figure 20 and Figure 21As shown, in step S10, the convex lens 122 focuses the infrared light and irradiates it onto the first end 211 of the other one of the wires 21 (a portion of the first surface of the standard semiconductor), and the infrared light heats the first end 211 of the other one of the wires 21, and the first end 211 of the other one of the wires 21 absorbs the heat of the infrared light; in step S20, the convex lens 122 stops focusing the infrared light and irradiating it onto the first end 211 of the other one of the wires 21, and the infrared heater 121 and the convex lens 122 stop heating the first end 211 of the other one of the wires 21, and the heat of the first end 211 of the other one of the wires 21 diffuses toward the second end 212 of the other one of the wires 21 (a portion of the second surface of the standard semiconductor); in step S30, the thermal imager 30 senses the temperature of the first end 211 of the other one of the wires 21 ; Step S40, the convex lens 122 focuses the infrared light and irradiates it onto the first end 411 of the other one of the wires 41 (a portion of the first surface of the target semiconductor), the infrared light heats the first end 411 of the other one of the wires 41, and the first end 411 of the other one of the wires 41 absorbs the heat of the infrared light; Step S50, the convex lens 122 stops focusing the infrared light and irradiating it onto the first end 411 of the other one of the wires 41, the infrared heater 121 and the convex lens 122 stop heating the first end 411 of the other one of the wires 41, and the heat of the first end 411 of the other one of the wires 41 diffuses toward the second end 412 of the other one of the wires 41 (a portion of the second surface of the target semiconductor); and Step S60, the thermal imager 30 senses the temperature of the first end 411 of the other one of the wires 41.
[0065] After collecting the temperatures of the first ends 211 and 221 of the wires 21 and 22, and the first ends 411 and 421 of the wires 41 and 42, the thermal imager 30 captures images of the first surface of the standard die 20 and the first surface of the target die 40. Finally, step S70 is executed to determine if the target die 40 has a defect, and that the defect is a broken wire 42.
[0066] In some embodiments, the point light source 12 is a laser heater.
[0067] In summary, the method of the present invention can detect whether a target semiconductor has defects by utilizing temperature difference contrast without damaging the target semiconductor.
[0068] The above is a preferred embodiment of the present invention. It should be pointed out that for ordinary personnel in this technical field, several improvements and modifications can be made without departing from the principles described in the present invention. These improvements and modifications are also within the scope of protection of the present invention.
Claims
1. A method for detecting semiconductor defects using temperature contrast, characterized in that: include: Acquire an image of a first surface or a second surface of a standard semiconductor; A heat source heats a portion or the entirety of a first surface of a target semiconductor, and a portion or the entirety of the first surface of the target semiconductor absorbs the heat of the heat source; The heat source stops heating a portion or the entirety of the first surface of the target semiconductor, and the portion or the entirety of the first surface of the target semiconductor diffuses heat toward a portion or the entirety of the second surface of the target semiconductor; a thermal imager for sensing a partial or entire temperature of the first surface or a partial or entire temperature of the second surface of the target semiconductor to obtain an image of the first surface or the second surface of the target semiconductor; and An inspection unit receives an image of the first surface or the second surface of the standard semiconductor and an image of the first surface or the second surface of the target semiconductor, and compares the grayscale of the image of the first surface or the second surface of the standard semiconductor with the image of the first surface or the second surface of the target semiconductor to determine whether the target semiconductor has defects.
2. The method for detecting semiconductor defects using temperature difference contrast according to claim 1, wherein: The obtaining of the image of the first surface or the second surface of the standard semiconductor further includes: The heat source heats part or all of the first surface of the standard semiconductor, and part or all of the first surface of the standard semiconductor absorbs the heat of the heat source; the heat source stops heating part or all of the first surface of the standard semiconductor, and part or all of the first surface of the standard semiconductor diffuses the heat toward part or all of the second surface of the standard semiconductor; and the thermal imager senses the temperature of part or all of the first surface of the standard semiconductor or the temperature of part or all of the second surface to obtain an image of the first surface or the second surface of the standard semiconductor.
3. The method for detecting semiconductor defects using temperature difference contrast according to claim 2, wherein: The thermal imager senses the partial or full temperature of the first surface or the partial or full temperature of the second surface of the standard semiconductor, and further includes: The thermal imager continuously captures partial or full images of the first surface of the standard semiconductor or partial or full images of the second surface of the standard semiconductor to sense partial or full temperature changes of the first surface of the standard semiconductor or partial or full temperature changes of the second surface of the standard semiconductor.
4. The method for detecting semiconductor defects using temperature difference contrast according to any one of claims 1 to 3, characterized in that: The determining whether the target semiconductor has defects further includes: Compared to the image of the first surface or the second surface of the standard semiconductor, the inspection unit detects that the grayscale of the image of at least one point-shaped area on the first surface of the target semiconductor is darker or detects that the grayscale of the image of at least one point-shaped area on the second surface of the target semiconductor is lighter, so as to determine that the target semiconductor has a defect and the defect is at least one broken wire.
5. The method for detecting semiconductor defects using temperature difference contrast according to any one of claims 1 to 3, characterized in that: The determining whether the target semiconductor has defects further includes: Compared to the image of the first surface or the second surface of the standard semiconductor, the inspection unit detects that the grayscale of the image of the first surface of the target semiconductor is reduced in at least one point-like area, or detects that the grayscale of the image of the second surface of the target semiconductor is reduced in at least one point-like area, so as to determine that the target semiconductor has a defect and the defect is at least one incorrectly made wire or misaligned assembly.
6. The method for detecting semiconductor defects using temperature difference contrast according to any one of claims 1 to 3, characterized in that: The determining whether the target semiconductor has defects further includes: Compared to the image of the first surface or the second surface of the standard semiconductor, the inspection unit detects that the grayscale of the image of the first surface of the target semiconductor increases by at least one point-shaped area, or detects that the grayscale of the image of the second surface of the target semiconductor increases by at least one point-shaped area, so as to determine that the target semiconductor has a defect and that the defect is at least one incorrectly made wire or misaligned assembly.
7. The method for detecting semiconductor defects using temperature difference contrast according to any one of claims 1 to 3, characterized in that: The determining whether the target semiconductor has defects further includes: Compared to the image of the first surface or the second surface of the standard semiconductor, the inspection unit detects that the grayscale of the image of at least one block area on the first surface of the target semiconductor is darker or detects that the grayscale of the image of at least one block area on the second surface of the target semiconductor is lighter, so as to determine that the target semiconductor has a defect and the defect is a non-conducting material that is damaged or the material ratio is incorrect.
8. The method for detecting semiconductor defects using temperature difference contrast according to any one of claims 1 to 3, characterized in that: The thermal imager senses the temperature of a portion or the entire first surface or the temperature of a portion or the entire second surface of the target semiconductor, and further includes: The thermal imager continuously captures partial or full images of the first surface of the target semiconductor or partial or full images of the second surface of the target semiconductor to sense partial or full temperature changes of the first surface of the target semiconductor or partial or full temperature changes of the second surface of the target semiconductor.
9. The method for detecting semiconductor defects using temperature difference contrast according to any one of claims 1 to 3, characterized in that: The heating time of the heat source is less than 0.1 seconds, and the heating temperature is greater than 50°C.
10. The method for detecting semiconductor defects using temperature difference contrast according to any one of claims 1 to 3, characterized in that: The heat source is a surface light source or a point light source.