Semiconductor photonic device and forming method thereof

Abstract

The embodiment of the invention discloses a semiconductor photonic device and a forming method thereof. A heater element of the modulator heater structure includes a plurality of segments. The sections of the heater element may be arranged in various configurations that conform to or differ from the shape of the light modulator structure. The section of the heater element increases the effective length of the heater element and reduces the cross-sectional area of the current path through the heater element. The combination of the increased length and the reduced cross-sectional area increases the resistance of the heater element, which increases the thermal efficiency of the heater element. The improvement of the thermal efficiency of the heater element enables the heater element to generate heat more efficiently. Accordingly, the improvement of the thermal efficiency of the heater element enables the heater element to more effectively stabilize the operating temperature of the light modulator structure, which can improve the light modulator structure.

Description

Technical Field

[0001] Embodiments of the present application relate to semiconductor photonic devices and methods of forming the same. Background Art

[0002] Semiconductor photonic devices can be configured to use optical signals for high-speed and secure data transmission between integrated circuits and / or semiconductor dies within the semiconductor photonic device. Optical signals can be transmitted through waveguides within the semiconductor photonic device. Waveguides confine the propagation of optical signals within them, reducing optical loss and improving optical signal propagation efficiency. Data can be encoded into the optical signals by modulating light into optical pulses using an optical modulator. The optical pulses are then transmitted to the waveguide for propagation to other areas of the semiconductor photonic device. Summary of the Invention

[0003] According to one aspect of an embodiment of the present application, a semiconductor photonic device is provided, comprising: an optical modulator structure; and a modulator heater structure, adjacent to the optical modulator structure, comprising: a distribution pad; and a heater element, adjacent to the optical modulator structure and electrically coupled to the distribution pad, wherein the heater element comprises a plurality of segments, and wherein at least a subset of the segments extend side by side with each other.

[0004] According to another aspect of an embodiment of the present application, a semiconductor photonic device is provided, comprising: an optical modulator structure; and a modulator heater structure, adjacent to the optical modulator structure, comprising: a plurality of distribution pads; and a heater element, adjacent to the optical modulator structure and electrically coupled to the plurality of distribution pads, comprising: a first bent segment; a second bent segment; and a third bent segment, electrically coupled to the first bent segment and electrically coupled to the second bent segment, wherein a first portion of the third bent segment extends along the first bent segment, and wherein a second portion of the third bent segment extends along the second bent segment.

[0005] According to another aspect of an embodiment of the present application, a method for forming a semiconductor photonic device is provided, comprising: forming an optical modulator structure in a semiconductor layer of the semiconductor photonic device; forming a heater element of a modulator heater structure adjacent to the optical modulator structure, wherein the heater element is formed to include a plurality of segments, and wherein the plurality of segments are connected by one or more connector segments of the heater element; and forming a distribution pad coupled to the heater element. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Various aspects of the present disclosure will be best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be emphasized that, in accordance with standard practice in the industry, various components are not drawn to scale and are used for illustrative purposes only. In fact, the dimensions of various components may be arbitrarily increased or decreased for clarity of discussion.

[0007] Figure 1A-1C is a schematic diagram of an example semiconductor photonic device described herein.

[0008] Figure 2A-2G is a schematic diagram of an example embodiment of forming a semiconductor photonic device described herein.

[0009] Figure 3A and Figure 3B is a schematic diagram of an example implementation of a heater element of a modulator heater structure described herein.

[0010] Figures 4A-4E is a schematic diagram of an example embodiment of an alternative placement of the modulator heater structures described herein.

[0011] Figure 5 is a schematic diagram of an example implementation of a modulator heater structure described herein.

[0012] Figure 6A-6G is a diagram of an example embodiment of a top-down arrangement of heater elements of light modulator structures and associated modulator heater structures described herein.

[0013] Figure 7 is a flow chart of an example process associated with forming the semiconductor photonic devices described herein. DETAILED DESCRIPTION

[0014] The following disclosure provides many different embodiments or examples for implementing the different features of the present disclosure. Specific embodiments or examples of components and arrangements are described below to simplify the present disclosure. Of course, these are merely examples and are not intended to be limiting. For example, in the following description, forming a first component above or on a second component may include an embodiment in which the first component and the second component are directly in contact with each other, and may also include an embodiment in which an additional component may be formed between the first component and the second component so that the first component and the second component may not be in direct contact. In addition, the present disclosure may repeat reference numbers and / or letters in various examples. This repetition is for the purpose of simplicity and clarity and does not itself indicate the relationship between the various embodiments and / or configurations discussed.

[0015] Furthermore, for ease of description, spacing terms such as "below," "beneath," "lower," "above," "upper," etc., may be used herein to describe the relationship of one element or component to another element or component as illustrated in the figures. Spacing terms are intended to encompass different orientations of the device in use or during operation in addition to the orientations depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations), and spacing descriptors used herein should be interpreted accordingly.

[0016] In some cases, a photonic integrated circuit including a waveguide and an optical modulator structure can be included in a dielectric region of a semiconductor photonic device. The dielectric region can be located above the substrate of the semiconductor photonic device. The resonant wavelength of the optical modulator structure can be sensitive to variations in process and operating temperature. Therefore, a modulator heater structure can be included in the dielectric region to stabilize the operating temperature of the optical modulator structure (and thereby stabilize the operating performance of the optical modulator) and / or modulate the optical signal via a thermo-optical effect.

[0017] The modulator heater structure can include a heater element located directly above the light modulator. The heater element can be configured to receive and dissipate current, thereby generating heat for heating the light modulator structure. The heater element can be coupled to distribution pads of the modulator heater structure. The distribution pads can be configured to provide current to the heater element (e.g., from one or more interconnect layer conductive structures).

[0018] Modulator heater structures can be a significant source of power consumption in semiconductor photonic devices. Therefore, thermal inefficiencies in the modulator heater structure can further increase the power consumption of semiconductor photonic devices, thereby reducing the power efficiency of semiconductor optoelectronic devices. Furthermore, thermal inefficiencies in the modulator heater structure can lead to temperature drops in the optical modulator structure, as thermal inefficiencies can cause the modulator heater structure to become unstable.

[0019] In some embodiments described herein, a waveguide structure and an optical modulator structure of a semiconductor photonic device are included in a dielectric region above a semiconductor photonic device substrate. A modulator heater structure is included to stabilize the operation of the optical modulator structure during operation by heating the optical modulator structure to a stable temperature. The modulator heater structure includes a heater element and a distribution pad electrically coupled to the heater element.

[0020] The heater element is a segmented heater element that, as opposed to a continuous (solid) heater element, includes multiple segments. The segments of the heater element can be arranged in various configurations that conform to or differ from the shape of the light modulator structure. The segments of the heater element increase the effective length of the heater element and reduce the cross-sectional area of ​​the current path through the heater element. The combination of increased length and reduced cross-sectional area increases the resistance of the heater element, which enables the heater element to dissipate current more efficiently than a continuous heater element (e.g., increases the thermal efficiency of the heater). The increase in the thermal efficiency of the heater element enables the heater element to heat faster and generate heat more efficiently than a continuous heater element. Therefore, the increase in the thermal efficiency of the heater element enables the heater element to more effectively stabilize the operating temperature of the light modulator structure, which can improve the light modulator structure.

[0021] Figure 1A-1Cis a schematic diagram of an example semiconductor photonic device 100 described herein. Figure 1A FIG shows a top view of the semiconductor photonic device 100. Figure 1A As shown, the semiconductor photonic device 100 may include a photonic integrated circuit. In other examples, the photonic integrated circuit includes an optical modulator structure 102 and one or more optical waveguide structures 104a and / or 104b. The optical modulator structure 102 and the one or more optical waveguide structures 104a and / or 104b can be configured to receive optical signals, modulate optical signals, and / or provide modulated optical signals for high-speed and secure data transmission between the integrated circuits and / or semiconductor dies of the semiconductor photonic device 100 and / or between the semiconductor photonic device 100 and another semiconductor photonic device. In some embodiments, the optical modulator structure 102 can be configured to modulate optical signals having a wavelength in the range of approximately 1260 nanometers to approximately 1360 nanometers. However, other wavelengths and other wavelength ranges are also within the scope of the present disclosure. In some embodiments, the photonic integrated circuit of the semiconductor photonic device 100 includes additional optical components, such as a grating coupler, a polarizer, an optical resonator, a beam splitter, and / or a photodetector.

[0022] like Figure 1A As shown, the optical modulator structure 102 may include a closed-loop optical waveguide structure that may be laterally located between the optical waveguide structures 104a and 104b such that the optical waveguide structures 104b and 104a are located adjacent to opposite sides of the closed-loop optical waveguide of the optical modulator structure 102. For example, Figure 1A As shown, in the semiconductor photonic device 100, the optical modulator structure 102 and the optical waveguide structure 104a may be horizontally adjacent (or laterally adjacent) in the y-direction, while in the semiconductor photonic device 100, the optical modulator structure 102 and the optical waveguide structure 104b may be horizontally adjacent (or laterally adjacent) in the y-direction. The optical modulator structure 102 and the optical waveguide structures 104a and 104b may be adjacent and / or side by side in the semiconductor photonic device 100 to facilitate optical signal coupling between the optical modulator structure 102 and the optical waveguide structures 104a and 104b.

[0023] The optical modulator structure 102 can be a "closed loop" because the optical waveguide structure of the optical modulator structure 102 can be a continuous optical waveguide structure connected to itself without endpoints. This differs from other types of modulators and resonators, such as Mach-Zehnder modulators (MZMs), which have endpoints corresponding to inputs and outputs. An optical signal can be coupled to the optical modulator structure 102 via evanescent coupling, rather than coupling to the MZM via propagation of the optical signal through the MZM's inputs and outputs. Evanescent coupling from the optical waveguide structure 104a (or from the optical waveguide structure 104b) and the optical modulator structure 102 occurs when the evanescent field of an optical signal propagating through the optical waveguide structure 104a (or from the optical waveguide structure 104b) extends into a portion of the optical modulator structure 102 adjacent to the optical waveguide structure 104a (or adjacent to the optical waveguide structure 104b). Similarly, evanescent coupling occurs from the optical modulator structure 102 to the optical waveguide structure 104a (or to the optical waveguide structure 104b) when the evanescent field of the optical signal propagating through the optical modulator structure 102 extends into a portion of the optical waveguide structure 104a (or a portion of the optical waveguide structure 104b).

[0024] like Figure 1A As shown, the light modulator structure 102 can have a generally annular top-view shape. In some embodiments, the light modulator structure 102 can have another top-view shape, such as Figure 6A-6G Alternatively, the light modulator structure 102 can be implemented as an MZM or another type of light modulator structure.

[0025] The optical waveguide structures 104a and 104b can extend in the x-direction along opposite sides of the optical modulator structure 102. Optical signals can be transmitted within the semiconductor photonic device 100 via the optical waveguide structure 104a. Opposite ends of the optical waveguide structure 104a correspond to the input port and the through port (or output port) of the photonic integrated circuit. The optical waveguide structure 104a can confine the optical signal, which can reduce optical loss and improve the propagation efficiency of the optical signal. In some embodiments, data can be encoded into the optical signal by modulating light into optical pulses in the optical modulator structure 102. The optical pulses are then transmitted to the optical waveguide structure 104a to propagate to other areas of the semiconductor photonic device 100.

[0026] The optical waveguide structure 104b can be used to control or manipulate the optical resonant properties of the optical modulator structure 102. For example, opposite ends of the optical waveguide structure 104b can correspond to a drop port and an add port of the photonic integrated circuit. Specific wavelengths or frequencies of optical signals in the optical modulator structure 102 can be coupled to the optical waveguide structure 104b and removed via the drop port to filter the optical signals at those wavelengths or frequencies. Conversely, the add port can be used to add optical signals of specific wavelengths or frequencies from the optical waveguide structure 104b to the optical modulator structure 102 by coupling those optical signals to the optical modulator structure 102. In some embodiments, the optical waveguide structure 104b is omitted from the semiconductor photonic device 100, and only the optical waveguide structure 104a is included in the semiconductor optoelectronic device 100.

[0027] like Figure 1A As further shown, the semiconductor photonic device 100 includes a modulator heater structure 106. The modulator heater structure 106 can be included above (e.g., vertically adjacent), below (e.g., vertically adjacent), and / or laterally adjacent (e.g., "in line" or horizontally adjacent) the light modulator structure 102. As described above, the resonant wavelength of the light modulator structure 102 can be sensitive to changes in operating temperature. Therefore, the modulator heater structure 106 can be configured to stabilize the operating temperature of the light modulator structure during operation of the light modulator structure 102. Specifically, the modulator heater structure 106 can heat (e.g., increase its temperature) the light modulator structure 102 to an operating temperature set point or a temperature within an operating temperature range, thereby stabilizing the operating performance of the light modulator structure. Additionally and / or alternatively, the operating temperature set point can be selected to achieve a specific refractive index in the light modulator structure 102, thereby achieving modulation of a specific frequency of an optical signal propagating through the light modulator structure 102 (e.g., via a thermo-optical effect).

[0028] The modulator heater structure 106 may include one or more distribution pads 108a and / or 108b (other numbers of distribution pads are within the scope of the present disclosure) that may be electrically and / or physically coupled to one or more back-end metallizations (e.g., back-end-of-line (BEOL) metallization layers) in the semiconductor photonic device 100. The back-end metallization layers may be configured to provide current to the modulator heater structure 106. The distribution pads 108a and / or 108b may include a plurality of interconnected conductive structures (e.g., trenches, metallization layers, conductive traces) arranged to achieve low resistance of the distribution pads 108a and / or 108b to minimize current dissipation in the distribution pads 108a and / or 108b. The distribution pads 108a and / or 108b may include one or more conductive materials, such as tungsten (W), titanium (Ti), copper (Cu), ruthenium (Ru), cobalt (Co), and / or another conductive material having low resistance.

[0029] The distribution pads 108a and / or 108b are electrically and / or physically coupled to a heater element 110 of the modulator heater structure 106. The heater element 110 can be included above (e.g., vertically adjacent) the light modulator structure 102, below (e.g., vertically adjacent) the light modulator structure 102, and / or laterally adjacent (e.g., "in line" or horizontally adjacent) the light modulator structure 102. In some embodiments, the heater element 110 laterally surrounds the light modulator structure 102.

[0030] The heater element 110 can be configured to generate heat and radiate the heat toward the light modulator structure 102. Current can be provided to the heater element 110 through the distribution pads 108a and / or 108b, and the heater element 110 can dissipate the current in the form of heat. The heater element 110 can include tungsten (W), titanium (Ti), copper (Cu), ruthenium (Ru), cobalt (Co), tantalum nitride (TaN), and / or another conductive material capable of dissipating heat toward the light modulator structure 102. Additionally and / or alternatively, the heater element 110 can include one or more materials with a higher electrical resistance than a metal material to achieve greater current dissipation in the heater element 110, thereby achieving higher heating efficiency. For example, the heater element 110 can include a semiconductor material, such as silicon (Si) and / or doped silicon.

[0031] In some embodiments, the heater element 110 can be configured to maintain a consistent temperature of the light modulator structure 102 so as to achieve a specific refractive index for the light modulator structure 101. For example, the heater element 110 can be configured to maintain a consistent temperature of the light modulator structure 102 so that the refractive index of the light modulator structure is maintained within a range of approximately 2.75 to approximately 2.90. However, other ranges of refractive indices for the light modulator structure 102 are also within the scope of the present disclosure. The ambient temperature range of the light modulator structure 102 can be approximately 25 degrees Celsius to approximately 105 degrees Celsius. However, other ranges of ambient temperature ranges for the light modulator structure 102 are also within the scope of the present disclosure. The operating temperature range of the light modulator structure 102 can be from 0 degrees Celsius to approximately 300 degrees Celsius. However, other ranges of operating temperature ranges for the light modulator structure 102 are also within the scope of the present disclosure.

[0032] like Figure 1AAs shown, the heater element 110 can have an overall top-view shape that is substantially consistent with the top-view shape of the light modulator structure 102. For example, the light modulator structure 102 can have a generally annular top-view shape, and the heater element 110 can have an overall circular top-view shape that is consistent with the generally annular top-view shape of the light modulator structure 102. Alternatively, the heater element 110 can have an overall top-view shape that is different from the top-view shape of the light modulator structure 102. Figure 6A-6G One or more of shows examples of such arrangements.

[0033] like Figure 1A As further shown, the heater element 110 includes a plurality of segments 112a-112c, rather than a solid ring. Two or more of the segments 112a-112c may be physically separated by a gap 114. For example, segments 112a and 112c may be separated by gap 114, and segments 112b and 112c may also be separated by gap 114. Furthermore, two or more of the segments 112a-112c may be electrically and / or physically coupled via connector segments 116a and 116b, such that the segments 112a-112c and the connector segments 116a and 116b may be connected to form a continuous serpentine arrangement. For example, segment 112a can be electrically and / or physically coupled to distribution pad 108a at a first end (e.g., a proximal end) of segment 112a, and can also be electrically and / or physically coupled to connector segment 116a at a second end (e.g., a distal end) of segment 112a opposite the first end. Segment 112c can be electrically and / or physically coupled to connector segment 116a at a first end of segment 112c, and can also be electrically and / or physically coupled to connector segment 116b at a second end of segment 112c opposite the first end. Segment 112b can be electrically and / or physically coupled to distribution pad 108b at a first end (e.g., a proximal end) of segment 112b, and can also be electrically and / or physically coupled to connector segment 116b at a second end (e.g., a distal end) of segment 112b opposite the first end. As such, segments 112 a - 112 c and connector segments 116 a and 116 b form a continuous current path between distribution pads 108 a and 108 b through heater element 110 . Figure 1A The number and arrangement of segments 112a - 112c and connector segments 116a and 116b shown in FIG. 1 is one example, and other numbers and arrangements of segments 112a - 112c and connector segment 116b are within the scope of the present disclosure.

[0034] The resistance across the heater element 110 can be expressed as:

[0035]

[0036] Among them, R加热器 corresponds to the resistance of the heater element 110, p corresponds to the resistivity of the material of the heater element 110, L corresponds to the length of the current path through the heater element 110, W is the cross-sectional width of the current path of the heater element 110, and t is the thickness of the heater element 110. The serpentine arrangement (e.g., two or more segments 112a-112c folded back along each other) increases the total length (L) of the current path through the heater element 110 and reduces the cross-sectional width (W) of the current path (e.g., compared to a continuous annular heater element), which increases the resistance (R) in the heater element 110. 加热器 ), thereby improving the thermal efficiency of the heater element 100.

[0037] like Figure 1A As shown, segments 112a-112c can be curved segments so that the overall top-view shape of the heater element 110 conforms to the top-view shape of the modulator structure 102. Additionally and / or alternatively, the heater element 110 can include one or more straight segments. The straight segments can be arranged in various configurations, such as an L-shape, an N-shape, a trident shape (or an E-shape or a W-shape), and / or other arrangements.

[0038] Two or more of the segments 112a-112c can form a "folded back" current path with each other, because the two or more segments 112a-112c can be coupled at the first ends of the two or more segments 112a-112c at connector segments 116a or 116b and can extend side by side with each other and can have similar curvatures. For example, segments 112a and portions of segment 112c can extend side by side with each other and can be electrically coupled together by connector segment 116a. Thus, the current path through the heater element 110 can extend from the distribution pad 108a, through segment 112a, through connector segment 116a, and through a portion of segment 112c, such that the current path folds back along segment 112a through a portion of segment 112c. As another example, segment 112b and another portion of segment 112c can extend side by side with each other and can be electrically coupled together by connector segment 116b. Thus, the current path through heater element 110 can extend from distribution pad 108a, through segment 112b, through connector segment 116b, and through a portion of segment 112c, such that the current path backs up along segment 112b through a portion of segment 112c. Thus, heater element 110 can include a collection of generally curved segments having similar curvatures, including a collection comprising segments 112a and 112c, and another collection comprising segments 112b and another portion of segment 112c.

[0039] The end of segment 112c can be located on the distal side of heater element 110 (e.g., further away from distribution pads 108a and 108b). Segment 112c can have a generally C-shaped (or reverse C-shaped) top view shape so that the end of segment 112c can be coupled to connector segments 116a and 116b on the distal side of heater element 110. Connector segments 116a and 116b can be separated from each other by gap 118 on the distal side, and distribution pads 108a and 108b can be separated from each other on the proximal side of heater element 110. In other embodiments, gap 118 and associated connector segments 116a and / or 116b can be located elsewhere along heater element 110.

[0040] Figure 1B A detailed top view of the serpentine arrangement of the heater element 110 is shown. Figure 1B As shown, segments 112a and portions 122 of segments 112c can be located on a first side of heater element 110 and a first side of gaps 118 and 120, while segments 112b and portions 124 of segments 112c can be located on a second side of heater element 110 and a second side of gaps 118 and 120. Segments 112a and 112b can be mirror images of each other in the x-direction. The set of segments 112a and 112c portions 122 can be generally symmetrical with the set of segments 112b and portions 124 of segments 112c along a line passing through gaps 118 and 120 in the y-direction. However, asymmetrical arrangements of the segments of heater element 110 are within the scope of the present disclosure.

[0041] like Figure 1B As further shown, the heater element 110 can have one or more example dimensions. One example dimension D1 includes the radius of the heater element 110 between a center point of the heater element 110 and a midpoint 126 along the overall cross-sectional width of the heater element 110. In some embodiments, the radius of the heater element 110 is within a range of approximately 3 microns to approximately 16 microns. In some embodiments, the radius of the heater element 110 is selected such that the heater element 110 at least partially overlaps the light modulator structure 102. In some embodiments, the radius of the heater element 110 is selected such that the heater element 110 can be positioned laterally around the light modulator structure 102. Additionally, other values ​​and ranges for the radius of the heater element 110 are within the scope of the present disclosure.

[0042] Another example dimension D2 includes the cross-sectional width of the outer segments, such as segment 112a and / or segment 112b. In some embodiments, the cross-sectional width of the outer segments can be comprised within a range of about 0.5 microns to about 1 micron to provide sufficient thermal heating while being able to provide gaps 114 between segments of a particular radius (dimension D1). However, other values ​​and ranges of cross-sectional widths of the outer segments are also within the scope of the present disclosure.

[0043] Another example dimension D3 comprises the cross-sectional width of the inner segment (e.g., C-shaped segment 112c). In some embodiments, the cross-sectional width of the inner segment can be comprised within a range of about 0.5 microns to about 1 micron to provide sufficient thermal heating while being able to provide a gap 114 between segments of a particular radius (dimension D1). However, other values ​​and ranges of cross-sectional widths of the inner segment are also within the scope of the present disclosure.

[0044] In some embodiments, the cross-sectional width of the outer segments (e.g., segments 112a and / or 112b) and the cross-sectional width of the inner segments (e.g., segment 112c) are approximately the same. In some embodiments, the cross-sectional width of the outer segments (e.g., segments 112a and / or 112b) and the cross-sectional width of the inner segments (e.g., segment 112c) are different cross-sectional widths.

[0045] Another example dimension D4 includes the width of a gap 114 between two or more segments, such as the gap between segments 112a and 112c and / or the gap between segments 112b and 112c. In some embodiments, the width of gap 114 can be comprised within a range of approximately 0.25 microns to approximately 0.75 microns to reduce the likelihood of electrical shorting between adjacent segments while allowing for inclusion of multiple segments within a particular radius (dimension D1). However, other values ​​and ranges for the width of gap 114 are also within the scope of the present disclosure.

[0046] Another example dimension D5 includes the width of gap 118 between two or more connector segments, such as the gap between connector segments 116a and 116b. In some embodiments, the width of gap 114 can be included in a range of about 0.25 microns to about 0.75 microns to reduce the likelihood of electrical shorting between adjacent connector segments while allowing for multiple segments to be included within a particular radius (dimension D1). However, other values ​​and ranges for the width of gap 118 are also within the scope of the present disclosure. In some embodiments, the width of gap 118 is approximately equal to the width of gap 114. In some embodiments, the width of gap 118 is different from the width of gap 114.

[0047] Another example dimension D6 comprises the width of gap 120 between the ends of two or more segments (such as the ends of segments 112a and 112b). In some embodiments, the width of gap 120 can be comprised within a range of approximately 0.25 microns to approximately 0.75 microns to reduce the likelihood of electrical shorting between segment ends while allowing for inclusion of multiple segments within a particular radius (dimension D1). However, other values ​​and ranges for the width of gap 120 are also within the scope of the present disclosure. In some embodiments, the width of gap 120 is approximately equal to the width of gap 114. In some embodiments, the width of gap 120 is different from the width of gap 114.

[0048] Another example dimension D7 comprises the radius offset between the radius of the heater element 110 (dimension D1) and the midpoint radius of the light modulator structure 102. Figure 1A-1C In the example shown, the midpoint radius of the light modulator structure 102 is greater than the radius of the heater element 110. In other embodiments, the midpoint radius of the light modulator structure 102 is less than the radius of the heater element 110, or the midpoint radius of the light modulator structure 100 and the radius of the heater element 110 are approximately equal. The radius offset between the radius of the heater element 110 and the midpoint radius of the light modulator structure 102 can be included in the range of approximately -0.75 microns to approximately +0.75 microns. However, other values ​​and ranges of radius offsets are also within the scope of the present disclosure.

[0049] For the same midpoint radius of the light modulator structure 102, and for the same segment configuration of the heater element 110, reducing the radius of the heater element 110 can reduce the power consumption of the heater element 110, can increase the operating temperature of the heater element 110, and / or can enable a lower voltage to be used for the heater element 110 to achieve a specific operating temperature. On the other hand, increasing the radius of the heater element can increase the power consumption of the heater element, can reduce the operating temperature of the heater element, and / or can enable a higher voltage to be used for the heater element to achieve a specific operating temperature. However, increasing the radius of the heater element 110 can provide a larger area for a greater number of segments, and a greater number of segments can enable the heater element 110 to reach a higher operating temperature and / or can reduce the power consumption of the heater element because the length of the current path is increased and / or the width of the cross-sectional current path is reduced.

[0050] Figure 1C The semiconductor photonic device 100 is shown along Figure 1A The cross-section of line AA. Figure 1CAs shown, the semiconductor photonic device 100 may include a substrate layer 128 and a dielectric region 130 above the substrate layer 128. The substrate layer 128 may include a semiconductor substrate, such as a silicon (Si) substrate, a silicon germanium (SiGe) substrate, a germanium (Ge) substrate, and / or another type of semiconductor substrate. The dielectric region 130 may include one or more dielectric layers, each of which includes one or more dielectric materials, such as silicon oxide (SiO x ), silicon nitride (Si x N y ), silicon oxynitride (SiO2), tetraethyl orthosilicate oxide, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), fluorinated silicate glass (FSG), carbon-doped silicon oxide and / or another dielectric material.

[0051] The light modulator structure 102 and the light waveguide structures 104a and / or 104b may be included in the dielectric region 130. Figure 1C In the example of FIG. 1 , the modulator heater structure 106 , including the segments 112 a - 112 c of the heater element 110 , may be included above the light modulator structure 102 in the z-direction in the semiconductor photonic device 100 .

[0052] In some embodiments, one or more contact structures 132 can be electrically and / or physically coupled to the light modulator structure 102. The contact structures 132 can be electrically and / or physically coupled to a metallization layer 134 in the dielectric region 130. The metallization layer 134 can enable electrical input to be provided to the light modulator structure 102 through the contact structures 132.

[0053] The distribution pads 108a and 108b of the modulator heater structure 106 may be electrically and / or physically coupled to a contact structure 136 above the modulator heater structure 106. The contact structure 136 may be electrically and / or physically coupled to a top metallization layer 138 in the dielectric region 130 above the contact structure 136. The top metallization layer 138 may enable electrical input to be provided to the modulator heater structure 106 through the contact structure 136.

[0054] The contact structures 132 and 136 may include contact plugs, vias, pillars, and / or other types of contact structures. The contact structures 132 and 136 may each include tungsten (W), cobalt (Co), ruthenium (Ru), titanium (Ti), aluminum (Al), copper (Cu), or gold (Au), among other examples of conductive materials.

[0055] The metallization layer 134 and the top metallization layer 138 may each include tungsten (W), cobalt (Co), ruthenium (Ru), titanium (Ti), aluminum (Al), copper (Cu), or gold (Au), as well as other examples of conductive materials. The metallization layer 134 and the top metallization layer 138 may each include vias, trenches, contact plugs, and / or another type of metallization layer.

[0056] As mentioned above, Figure 1A-1C Provided as an example only. Other examples may differ Figure 1A-1C Different from what is described in .

[0057] Figure 2A-2G is a schematic diagram of an example embodiment 200 of forming the semiconductor photonic device 100 described herein. The example embodiment 200 may include an example of forming a photonic integrated circuit in the semiconductor photonic device 100, wherein the photonic integrated circuit includes the light modulator structure 102 and the modulator heater structure 106. In some embodiments, the bonding may be performed using one or more semiconductor processing tools (e.g., a deposition tool, an exposure tool, a development tool, an etching tool, a planarization tool, and / or another semiconductor processing tool). Figure 2A-2G Describes one or more operations.

[0058] like Figure 2A As shown, the semiconductor photonic device 100 may be formed on a substrate 202. The substrate 202 may include a silicon-on-insulator (SOI) substrate including a substrate layer 128, a portion of a dielectric region 130 (e.g., a buried oxide (BOX) layer) on the substrate layer 128, and a semiconductor layer 204 on the portion of the dielectric region 130. The substrate 202 may be provided as a prefabricated wafer.

[0059] Alternatively, substrate layer 128 can be provided as a semiconductor wafer (e.g., a silicon (Si) wafer), and portions of dielectric region 130 and semiconductor layer 204 can be formed on substrate layer 128. For example, a deposition tool can be used to deposit portions of dielectric region 130 using a physical vapor deposition (PVD) technique, an atomic layer deposition (ALD) technique, a chemical vapor deposition technique, an oxidation technique, and / or another suitable deposition technique. In some embodiments, a planarization tool can be used to perform a planarization operation (e.g., a chemical mechanical planarization (CMP) operation) to planarize portions of dielectric region 130 after depositing the portions of dielectric region 130. The deposition tool can be used to deposit semiconductor layer 204 using an epitaxial technique and / or another suitable deposition technique.

[0060] like Figure 2BAs shown, the semiconductor layer 204 can be etched to form the optical waveguide structures 104a and / or 104b and the light modulator structure 102. In some embodiments, a pattern in a photoresist layer is used to etch the semiconductor layer 204 to form the optical waveguide structures 104a and / or 104b and the light modulator structure 102. In these embodiments, a deposition tool can be used to form the photoresist layer on the semiconductor layer 204 (e.g., using a spin coating technique and / or another suitable deposition technique). An exposure tool can be used to expose the photoresist layer to a radiation source to pattern the photoresist layer. A development tool can be used to develop and remove portions of the photoresist layer to expose the pattern. An etching tool can be used to etch the semiconductor layer 204 based on the pattern to form the optical waveguide structures 104a and / or 104b and the light modulator structure 102. In some embodiments, the etching operation includes a dry etching operation (e.g., a plasma-based etching operation, a gas-based etching operation), a wet chemical etching operation, and / or another type of etching operation. In some embodiments, a photoresist removal tool can be used to remove remaining portions of the photoresist layer (eg, using chemical strippers, plasma ashing, and / or other techniques). In some embodiments, a hard mask layer is used as an alternative technique to pattern-based etching of the semiconductor layer 204 .

[0061] like Figure 2C As shown, the additional material of the dielectric region 130 can be formed on the optical waveguide structure 104a and / or 104b and the optical modulator structure 102. A deposition tool can be used to deposit the additional material of the dielectric region 130 using a PVD technique, an ALD technique, a CVD technique, an oxidation technique, and / or another suitable deposition technique. In some embodiments, after depositing the additional material of the dielectric region 130, a planarization tool can be used to perform a planarization operation (e.g., a CMP operation) to planarize the dielectric region 130.

[0062] In some embodiments, a shallow trench isolation (STI) portion of the dielectric region 130 is formed, and a metal silicide layer is formed on the terminal region of the light modulator structure 102 by silicide. Subsequently, additional material is formed on the dielectric region 130. The metal silicide layer may include titanium silicide (TiSi), ruthenium silicide (RuSi), and / or another suitable metal silicide material. The metal silicide layer may be included to reduce the contact resistance between the light modulator structure 102 and the contact structure 132 formed on the light modulator structure 102.

[0063] like Figure 2C As further shown, a contact structure 132 can be formed on the light modulator structure 102. In some embodiments, the contact structure 132 is formed on a metal silicide layer on the light modulator structure 102. The contact structure 132 can be formed in a recess in the dielectric region 130.

[0064] In some embodiments, the pattern in the photoresist layer is used to etch the dielectric region 130 to form a recess. In these embodiments, a deposition tool can be used to form a photoresist layer on the dielectric region 130 (e.g., using a spin coating technique and / or another suitable deposition technique). An exposure tool can be used to expose the photoresist layer to a radiation source to pattern the photoresist layer. A development tool can be used to develop and remove portions of the photoresist layer to expose the pattern. An etching tool can be used to etch the dielectric region 130 based on the pattern to form a recess. In some embodiments, the etching operation includes a dry etching operation (e.g., a plasma-based etching operation, a gas-based etching operation), a wet chemical etching operation, and / or another type of etching operation. In some embodiments, a photoresist removal tool can be used to remove the remaining portion of the photoresist layer (e.g., using a chemical stripper, plasma ashing, and / or another technique). In some embodiments, a hard mask layer is used as an alternative technique to etching the dielectric region 130 based on the pattern.

[0065] The deposition tool can be used to deposit the contact structure 132 using CVD techniques, PVD techniques, ALD techniques, electroplating techniques, and / or another suitable deposition technique. The contact structure 132 can be deposited in one or more deposition operations. In some embodiments, a liner is fired and deposited in the recess, and the contact structure 132 is formed on the liner. The liner can include a barrier liner, an adhesion liner, and / or another type of liner, and can include tantalum nitride (TaN), titanium nitride (TiN), and / or other suitable liner materials. In some embodiments, a seed layer is deposited first, and the contact structure 132 is deposited on the seed layer. In some embodiments, after depositing the contact structure 132, a planarization operation (e.g., a CMP operation) is performed using a planarization tool to planarize the contact structure 132.

[0066] like Figure 2D As shown, the modulator heater structure 106 may be formed in the dielectric region 130. Figure 2B In the example shown, the modulator heater structure 106 is formed above and / or over the light modulator structure 102. Additionally and / or alternatively, the modulator heater structure 106 can be formed first, and then the light modulator structure 102 can be formed above the modulator heater structure 106, such that the modulator heater structure 106 is below and / or under the light modulator structure 102. Additionally and / or alternatively, the modulator heater structure 106 is formed "in line" with the light modulator structure 102, such that the light modulator structure 106 is laterally adjacent to (and, in some embodiments, laterally surrounds) the modulator heater structure 102.

[0067] The heater element 110 of the modulator heater structure 106 may be formed to include a plurality of segments (e.g., segments 102a-102c) connected by connector segments (116a, 116b) of the heater element 110. Furthermore, the heater element 110 of the modulator heater structure 106 may be formed such that one or more segments are electrically and / or physically coupled to one or more distribution pads (e.g., distribution pads 108a, 108b) of the modulator heater structure 108.

[0068] The modulator heater structure 106 can be formed in a recess in the dielectric region 130. In some embodiments, a pattern in the photoresist layer is used to etch the dielectric region to form the recess. In these embodiments, a deposition tool can be used to form a photoresist layer on the dielectric region 130 (e.g., using a spin-on technique and / or another suitable deposition technique). An exposure tool can be used to expose the photoresist layer to a radiation source to pattern the photoresist layer. A development tool can be used to develop and remove portions of the photoresist layer to expose the pattern. An etching tool can be used to etch the dielectric region 130 based on the pattern to form the recess. In some embodiments, the etching operation includes a dry etching operation (e.g., a plasma-based etching operation, a gas-based etching operation), a wet chemical etching operation, and / or another type of etching operation. In some embodiments, a photoresist removal tool can be used to remove the remaining portion of the photoresist layer (e.g., using a chemical stripper, plasma ashing, and / or another technique). In some embodiments, a hard mask layer is used as an alternative technique to etching the dielectric region 130 based on the pattern.

[0069] A deposition tool can be used to deposit the modulator heater structure 106 using CVD techniques, PVD techniques, ALD techniques, electroplating techniques, and / or another suitable deposition technique. The modulator heater structure 106 can be deposited in one or more deposition operations. In some embodiments, a seed layer is first deposited, and then the modulator heater structure 106 is deposited on the seed layer. In some embodiments, after depositing the modulator heater structure 106, a planarization tool is used to perform a planarization operation (e.g., a CMP operation) to planarize the modulator heater structure 108.

[0070] like Figure 2E As shown, the additional material of the dielectric region 130 can be formed on the contact structure 132 and the modulator heater structure 106. A deposition tool can be used to deposit the additional material of the dielectric region 130 using a PVD technique, an ALD technique, a CVD technique, an oxidation technique, and / or another suitable deposition technique. In some embodiments, after depositing the additional material of the dielectric region 130, a planarization tool can be used to perform a planarization operation (e.g., a CMP operation) to planarize the dielectric region 30.

[0071] like Figure 2EAs further shown, metallization layers 134 can be formed in the dielectric region 130. In some embodiments, one or more metallization layers 134 are formed on the contact structure 132. In some embodiments, one or more metallization layers 134 are formed on other structures in the dielectric region 130.

[0072] The metallization layer 134 can be formed in the recess in the dielectric region 130. In some embodiments, the pattern in the photoresist layer is used to etch the dielectric region 130 to form the recess. In these embodiments, a deposition tool can be used to form a photoresist layer on the dielectric region 130 (e.g., using a spin coating technique and / or another suitable deposition technique). An exposure tool can be used to expose the photoresist layer to a radiation source to pattern the photoresist layer. A development tool can be used to develop and remove portions of the photoresist layer to expose the pattern. An etching tool can be used to etch the dielectric region 130 based on the pattern to form the recess. In some embodiments, the etching operation includes a dry etching operation (e.g., a plasma-based etching operation, a gas-based etching operation), a wet chemical etching operation, and / or another type of etching operation. In some embodiments, a photoresist removal tool can be used to remove the remaining portion of the photoresist layer (e.g., using a chemical stripper, plasma ashing, and / or another technique). In some embodiments, a hard mask layer is used as an alternative technique to etching the dielectric region 130 based on the pattern.

[0073] The deposition tool can be used to deposit the metallization layer 134 using CVD techniques, PVD techniques, ALD techniques, electroplating techniques, and / or another suitable deposition technique. The metallization layer 134 can be deposited in one or more deposition operations. In some embodiments, a deposition liner is fired in the recess and the metallization layer 134 is formed on the liner. The liner may include a barrier liner, an adhesion liner, and / or another type of liner and may include tantalum nitride (TaN), titanium nitride (TiN), and / or other suitable liner materials. In some embodiments, a seed layer is first deposited and the metallization layer 134 is deposited on the seed layer. In some embodiments, after the metallization layer 134 is deposited, a planarization operation (e.g., a CMP operation) is performed using a planarization tool to planarize the metallization layer 134.

[0074] like Figure 2F As shown, the additional material of the dielectric region 130 can be formed on the metallization layer 134. A deposition tool can be used to deposit the additional material of the dielectric region 130 using a PVD technique, an ALD technique, a CVD technique, an oxidation technique, and / or another suitable deposition technique. In some embodiments, after depositing the additional material of the dielectric region 130, a planarization tool can be used to perform a planarization operation (e.g., a CMP operation) to planarize the dielectric region 130.

[0075] like Figure 2FAs further shown, contact structures 136 may be formed in dielectric region 130. Contact structures 136 are formed on distribution pads 108a and / or 108b of modulator heater structure 106 such that contact structures 136 are electrically and / or physically coupled to modulator heater structure 106.

[0076] The contact structure 136 can be formed in a recess in the dielectric region 130. In some embodiments, a pattern in the photoresist layer is used to etch the dielectric region 130 to form the recess. In these embodiments, a deposition tool can be used to form a photoresist layer on the dielectric region 130 (e.g., using a spin coating technique and / or another suitable deposition technique). An exposure tool can be used to expose the photoresist layer to a radiation source to pattern the photoresist layer. A development tool can be used to develop and remove portions of the photoresist layer to expose the pattern. An etching tool can be used to etch the dielectric region 130 based on the pattern to form the recess. In some embodiments, the etching operation includes a dry etching operation (e.g., a plasma-based etching operation, a gas-based etching operation), a wet chemical etching operation, and / or another type of etching operation. In some embodiments, a photoresist removal tool can be used to remove the remaining portion of the photoresist layer (e.g., using a chemical stripper, plasma ashing, and / or another technique). In some embodiments, a hard mask layer is used as an alternative technique to etching the dielectric region 130 based on the pattern.

[0077] The deposition tool can be used to deposit the contact structure 136 using CVD techniques, PVD techniques, ALD techniques, electroplating techniques, and / or another suitable deposition technique. The contact structure 136 can be deposited in one or more deposition operations. In some embodiments, a liner is fired and deposited in the recess, and the contact structure 136 is formed on the liner. The liner can include a barrier liner, an adhesion liner, and / or another type of liner, and can include tantalum nitride (TaN), titanium nitride (TiN), and / or other suitable liner materials. In some embodiments, a seed layer is deposited first, and the contact structure 136 is deposited on the seed layer. In some embodiments, after depositing the contact structure 136, a planarization tool is used to perform a planarization operation (e.g., a CMP operation) to planarize the contact structure 136.

[0078] like Figure 2G As shown, the additional material of the dielectric region 130 can be formed on the contact structure 136. A deposition tool can be used to deposit the additional material of the dielectric region 130 using a PVD technique, an ALD technique, a CVD technique, an oxidation technique, and / or another suitable deposition technique. In some embodiments, after depositing the additional material of the dielectric region 130, a planarization tool can be used to perform a planarization operation (e.g., a CMP operation) to planarize the dielectric region 30.

[0079] like Figure 2GAs further shown, a top metallization layer 138 can be formed in the dielectric region 130. In some embodiments, portions of the top metallization layer 138 are formed over the contact structures 136. In some embodiments, portions of the top metallization layer 138 are formed over other structures in the dielectric region 130.

[0080] The top metallization layer 138 can be formed in the recess in the dielectric region 130. In some embodiments, the pattern in the photoresist layer is used to etch the dielectric region 130 to form the recess. In these embodiments, a deposition tool can be used to form a photoresist layer on the dielectric region 130 (e.g., using a spin coating technique and / or another suitable deposition technique). An exposure tool can be used to expose the photoresist layer to a radiation source to pattern the photoresist layer. A development tool can be used to develop and remove portions of the photoresist layer to expose the pattern. An etching tool can be used to etch the dielectric region 130 based on the pattern to form the recess. In some embodiments, the etching operation includes a dry etching operation (e.g., a plasma-based etching operation, a gas-based etching operation), a wet chemical etching operation, and / or another type of etching operation. In some embodiments, a photoresist removal tool can be used to remove the remaining portion of the photoresist layer (e.g., using a chemical stripper, plasma ashing, and / or another technique). In some embodiments, a hard mask layer is used as an alternative technique to etching the dielectric region 130 based on the pattern.

[0081] The deposition tool can be used to deposit the top metallization layer 138 using CVD technology, PVD technology, ALD technology, electroplating technology and / or another suitable deposition technology. The top metallization layer 138 can be deposited in one or more deposition operations. In some embodiments, a deposition liner is fired in the recess and the top metallization layer 138 is formed on the liner. The liner may include a barrier liner, an adhesion liner and / or another type of liner and may include tantalum nitride (TaN), titanium nitride (TiN) and / or other suitable liner materials. In some embodiments, a seed layer is first deposited and the top metallization layer 138 is deposited on the seed layer. In some embodiments, after depositing the top metallization layer 138, a planarization tool is used to perform a planarization operation (e.g., a CMP operation) to planarize the top metallization layer 138.

[0082] As mentioned above, Figure 2A-2G Provided as an example only. Other examples may differ Figure 2A-2G Different from what is described in .

[0083] Figure 3A and Figure 3B is a schematic diagram of an example implementation of a heater element 110 of the modulator heater structure 106 described herein. Figure 3A and Figure 3BThe example embodiments shown in FIG. 1 are examples of different radii for the heater element 110 .

[0084] exist Figure 3A In the illustrated example embodiment 300, the radius of the heater element 110 (dimension D1) and the radius of the light modulator structure 102 are substantially equal, resulting in a radius offset (dimension D7) of approximately 0 micrometers. In the example embodiment 300, the gaps 114 between the segments 102a and 102c and between the segments 102b and 102c can be located directly above the light modulator structure 102.

[0085] exist Figure 3B In the example embodiment 302 shown, the radius of the heater element 110 (dimension D1) is larger than the radius of the light modulator structure 102. This results in a non-zero radius offset (dimension D7). In the example embodiment 302, the segment 102a can be located directly above the light modulator structure 102.

[0086] As previously described, reducing the radius (dimension D1) of the heater element 110 can reduce its power consumption, increase its operating temperature, and / or enable it to use a lower voltage to achieve a specific operating temperature. Increasing the radius of the heater element 110 can provide a larger area for a greater number of segments, and a greater number of segments can enable the heater element 110 to reach a higher operating temperature and / or can reduce the power consumption of the heater element because the length of the current path is increased and / or the width of the cross-sectional current path is reduced.

[0087] As mentioned above, Figure 3A and Figure 3B Provided as an example only. Other examples may differ Figure 3A and Figure 3B Different from what is described in .

[0088] Figures 4A-4E is a diagram of an example embodiment of an alternative placement of the modulator heater structure 106 described herein. Figure 1C In FIG. 1 , the modulator heater structure 106 is located above the light modulator structure 102 and is electrically connected to the top metallization layer 138 through one or more contact structures 136 .

[0089] exist Figure 4A In the illustrated example embodiment 400, the modulator heater structure 106 is positioned below and / or beneath the light modulator structure 102 and is electrically connected to the top metallization layer 138 via one or more contact structures 136. Thus, in the example embodiment 400, the modulator heater structure 106 may be referred to as a backside heater and may be configured to radiate heat upward toward the light modulator structure 102.

[0090] exist Figure 4BIn the illustrated example embodiment 402, the modulator heater structure 106 is positioned on and / or over the light modulator structure 102, similar to Figure 1C However, in example embodiment 402, the distribution pads 108a and / or 108b of the modulator heater structure 106 can be electrically connected to a backside metallization layer 404 through one or more contact structures 136. The backside metallization layer 404 can be located in a backside dielectric region 406 on the back side of the substrate layer 128. The backside metallization layer 404 in the backside dielectric region 406 can include additional interconnects for power delivery and / or signal propagation on the back side of the substrate layer 128.

[0091] exist Figure 4C In the illustrated example embodiment 408, the modulator heater structure 106 is positioned below and / or beneath the light modulator structure 102 and is electrically connected to the backside metallization layer 404 in the backside dielectric region 406 via one or more contact structures 136. Thus, in the example embodiment 408, the modulator heater structure 106 may be referred to as a backside heater and may be configured to radiate heat upward toward the light modulator structure 102.

[0092] exist Figure 4D In the illustrated example embodiment 410, the modulator heater structure 106 is laterally adjacent to the light modulator structure 102. The modulator heater structure 106 can laterally surround the light modulator structure 102 and can radiate heat laterally toward the light modulator structure 102. The modulator heater structure 106 can be electrically connected to the top metallization layer 138 via one or more contact structures 136 and / or can be electrically connected to the backside metallization layer 404 in the backside dielectric region 406 via one or more contact structures 136.

[0093] Figure 1C and Figures 4A-4C The example embodiment shown in FIG. 1 can achieve a smaller lateral footprint for the light modulator structure 102 and the associated modulator heater structure 106, while Figure 4D The example implementation 410 shown in FIG. 4 may enable a smaller vertical footprint for the light modulator structures 102 and associated modulator heater structures 106 .

[0094] exist Figure 4EIn the illustrated example embodiment 412, the light modulator structure 102 is vertically positioned between a plurality of modulator heater structures 106a and 106b. The modulator heater structure 106a can be positioned above and / or over the light modulator structure 102, and the modulator heater structure 106b can be positioned below and / or under the light modulator structure 102. The modulator heater structures 106a and 106b can be configured according to one or more example embodiments described herein, wherein the modulator heater structures 106b and / or 106b include multiple segments. The modulator heater structures 106a and 106b can be electrically connected together via an interconnect structure 414 in the dielectric region 130, and can be electrically connected to the top metallization layer 138 via one or more contact structures 136, and / or can be electrically connected to the backside metallization layer 404 in the backside dielectric region 406 via one or more contact structures 136.

[0095] As mentioned above, Figures 4A-4E Provided as an example only. Other examples may differ Figures 4A-4E Different from what is described in .

[0096] Figure 5 is a schematic diagram of an example implementation 500 of the modulator heater structure 106 described herein. Figure 5 As shown, an example embodiment 500 of the modulator heater structure 106 includes Figure 1A-1C . However, in exemplary embodiment 500, modulator heater structure 106 includes additional segments 112d and 112e, a plurality of gaps 114a and 114b, and additional connector segments 116c and 116d, which further increase the length of the current path through heater element 110 of modulator heater structure 106. The increased length of the current flow path through heater element 110 can further increase the resistance in heater element 110, thereby further improving the thermal efficiency of heater element 110.

[0097] like Figure 5As shown, a first end of segment 112a can be electrically and / or physically coupled to distribution pad 108a on a first side (e.g., a proximal side) of heater element 110, and a second end of segment 112a, opposite the first end, can be electrically and / or physically coupled to connector segment 116a on a second side (e.g., a distal side) of heater element 110 opposite the first side in the y-direction. A first end of segment 112d can be electrically and / or physically coupled to connector segment 116a on a second side of heater element 110, and a second end of segment 112d, opposite the first end, can be electrically and / or physically coupled to connector segment 116c on the first side of heater element 110. A first end of segment 112c can be electrically and / or physically coupled to connector segment 116c on the first side of heater element 110, and a second end of segment 112c, opposite the first end, can be electrically and / or physically coupled to connector segment 116d on the first side of heater element 110. A first end of segment 112e may be electrically and / or physically coupled to connector segment 116d on a first side of heater element 110, and a second end of segment 112e opposite the first end may be electrically and / or physically coupled to connector segment 116b on a second side of heater element 110. A first end of segment 112b may be electrically and / or physically coupled to connector segment 116b on a second side of heater element 110, and a second end of segment 112b opposite the first end may be electrically and / or physically coupled to distribution pad 108b on the first side of heater element 110.

[0098] Gap 114a may be located between segments 112a and 112d, and between segments 112b and 112e. Segments 112a and 112d may be curved segments extending side by side. Segments 112b and 112e may be curved segments extending side by side. Gap 114b may be located between segments 112d and 112c, and between segments 112e and 112c. Segment 112c may be generally C-shaped. Segment 112d and a first portion (e.g., portion 122) of segment 112c may extend side by side. Segment 112e and a second portion (e.g., portion 124) of segment 112c may extend side by side.

[0099] A gap 118 may be located between connector sections 116a and 116b on the second side of heater element 110. A gap 120 may be located between connector sections 116c and 116d on the first side of heater element 110.

[0100] As mentioned above, Figure 5 is an example. Other examples might be related to Figure 5 Different from what is described in .

[0101] Figure 6A-6Gis a diagram of an example embodiment of a top-down arrangement of light modulator structures 102 and heater elements 110 of associated modulator-heater structures 106 described herein. Figure 6A-6G The example embodiments shown in include various top-view shapes and segment arrangements of the heater element 110 , as well as various top-view shapes of the light modulator structure 102 . Figure 6A-6G The top view arrangements shown in are some examples, and other top view arrangements are also within the scope of the present disclosure. In general, some example embodiments of the top view arrangement include the heater element 110 having an overall top view shape that is consistent with the top view shape of the light modulator structure 102, while other example embodiments of the top view arrangement include the heater element 110 having an overall top view shape that is different from the top view shape of the light modulator structure 102.

[0102] exist Figure 6A In the example embodiment 600 of FIG. 1 , the overall top-view shape of the heater element 110 is generally circular and substantially conforms to the annular top-view shape of the light modulator structure 102. This is similar to Figure 1A and Figure 1B The top view layout in Figure 6A The arrangement of the segments and connector segments in the example embodiment 600 is different from Figure 1A 、 Figure 1B Arrangement of the segments and connector segments in the top view arrangement.

[0103] exist Figure 6A In the example embodiment 600 of FIG. 1 , heater element 110 includes segments 112a-112e, gaps 114a and 114b, and connector segments 116a-116d. Segments 112a-112e may be curved segments and included on one side of connector segment 116d in the x-direction. For example, segments 112a and 112d may be included on a first side of connector segment 116d, while segments 112b, 112c, and 112d may be located on a second side of connector segment 116c opposite the first side in the x-direction. Connector segment 116d may be the central connector segment of heater element 110.

[0104] Connector segments 116a and 116b may be located on a first side of connector segment 116d in the dy direction, and connector segment 116c may be located on a second side of connector segment 116d opposite the first side in the y direction. Connector segment 116a may electrically couple segments 112a and 112d, connector segment 116b may electrically couple segments 112b and 112d, connector segment 116c may electrically couple segments 112c and 112e, and connector segment 116d may electrically couple segments 112d and 112e.

[0105] Figure 6AThe orientation of the heater element 110 shown is an example, and other orientations are within the scope of the present disclosure. The heater element 110 can be rotated relative to the light modulator structure 102 (e.g., 90 degrees, 180 degrees) to improve the thermal efficiency of the heater element 110, to target heating of specific portions of the light modulator structure 102, and / or to enable a specific spacing between the light modulator structure and the optical waveguide structures 104a and / or 104b.

[0106] exist Figure 6B In the example embodiment 602 of FIG. 1 , the overall top-view shape of the heater element 110 is asymmetrical, with only portions of the top-view shape of the heater element 110 substantially conforming to the annular top-view shape of the light modulator structure 102. For example, a first portion of the heater element 110 may have a generally circular top-view shape, and a second portion of the heater element 110 may have a generally square top-view shape. The first portion substantially conforms to the top-view shape of the light modulator structure 102, while the second portion does not conform to the top-view shape of the light modulator structure 102.

[0107] Figure 6B The orientation of the heater element 110 shown is an example, and other orientations are within the scope of the present disclosure. The heater element 110 can be rotated relative to the light modulator structure 102 (e.g., 90 degrees, 180 degrees) to improve the thermal efficiency of the heater element 110, to target heating of specific portions of the light modulator structure 102, and / or to enable a specific spacing between the light modulator structure and the optical waveguide structures 104a and / or 104b.

[0108] exist Figure 6C In the example embodiment 604 in FIG. 6 , the overall top-view shape of the heater element 110 is generally square and substantially conforms to the square top-view shape of the light modulator structure 102 . Figure 6C The overall arrangement of the segments and connector segments in the example embodiment 604 may be similar to Figure 1A and Figure 1B The arrangement of the segments and connector segments in the top view arrangement in Figure 6C In the example embodiment 602, the segments 112a-112c are angled rather than curved. In some embodiments, Figure 6C The two or more segments 112a-112c in the example embodiment 604 are straight segments extending generally parallel to each other.

[0109] Figure 6CThe orientation of the heater element 110 shown is an example, and other orientations are within the scope of the present disclosure. The heater element 110 can be rotated relative to the light modulator structure 102 (e.g., 90 degrees, 180 degrees) to improve the thermal efficiency of the heater element 110, to target heating of specific portions of the light modulator structure 102, and / or to enable a specific spacing between the light modulator structure and the optical waveguide structures 104a and / or 104b.

[0110] exist Figure 6D In the example embodiment 606 of FIG. 1 , the overall top-view shape of the heater element 110 is generally square, which does not conform to the triangular top-view shape of the light modulator structure 102. The light modulator structure 102 can be oriented such that the corners of the triangular top-view shape face the light waveguide structure 104 a, and the sides of the triangular top-view shape face the light waveguide structure 104 b. Alternatively, the orientation of the triangular top-view shape is within the scope of the present disclosure and may include, among other examples, opposing corners of the triangular top-view shape facing the light waveguide structures 104 a and 104 b.

[0111] Figure 6D The orientation of the heater element 110 shown is an example, and other orientations are within the scope of the present disclosure. The heater element 110 can be rotated relative to the light modulator structure 102 (e.g., 90 degrees, 180 degrees) to improve the thermal efficiency of the heater element 110, to target heating of specific portions of the light modulator structure 102, and / or to enable a specific spacing between the light modulator structure and the optical waveguide structures 104a and / or 104b.

[0112] exist Figure 6E In the example embodiment 608 of FIG. 1 , the overall top-view shape of the heater element 110 is generally circular, which does not conform to the rectangular top-view shape of the light modulator structure 102. The light modulator structure 102 can be oriented such that the corners of the rectangular top-view shape face the light waveguide structures 104 a and 104 b. Alternatively, a triangular top-view orientation is within the scope of the present disclosure and can include, among other examples, opposite sides of the triangular top-view shape facing the light waveguide structures 104 a and 104 b.

[0113] Figure 6E The orientation of the heater element 110 shown is an example, and other orientations are within the scope of the present disclosure. The heater element 110 can be rotated relative to the light modulator structure 102 (e.g., 90 degrees, 180 degrees) to improve the thermal efficiency of the heater element 110, to target heating of specific portions of the light modulator structure 102, and / or to enable a specific spacing between the light modulator structure and the optical waveguide structures 104a and / or 104b.

[0114] exist Figure 6FIn the example embodiment 610 in FIG. 5 , the overall top-view shape of the heater element 110 is generally elliptical and substantially conforms to the elliptical top-view shape of the light modulator structure 102 . Figure 6F The overall arrangement of the segments and connector segments in the example embodiment 610 may be similar to Figure 1A and Figure 1B The arrangement of the segments and connector segments in the top view arrangement. Or, Figure 6F The segments and connector segments in the example embodiment 610 may have different overall arrangements.

[0115] Figure 6F The orientation of the heater element 110 shown is an example, and other orientations are within the scope of the present disclosure. The heater element 110 can be rotated relative to the light modulator structure 102 (e.g., 90 degrees, 180 degrees) to improve the thermal efficiency of the heater element 110, to target heating of specific portions of the light modulator structure 102, and / or to enable a specific spacing between the light modulator structure and the optical waveguide structures 104a and / or 104b.

[0116] exist Figure 6G In the example embodiment 612 in FIG. 6 , the overall top-view shape of the heater element 110 is generally rounded and substantially conforms to the rounded top-view shape of the light modulator structure 102 . Figure 6G The overall arrangement of the segments and connector segments in the example embodiment 612 may be similar to Figure 1A and Figure 1B The arrangement of the segments and connector segments in the top view arrangement. Or, Figure 6G The segments and connector segments in the example embodiment 612 may have different overall arrangements.

[0117] Figure 6G The orientation of the heater element 110 shown is an example, and other orientations are within the scope of the present disclosure. The heater element 110 can be rotated relative to the light modulator structure 102 (e.g., 90 degrees, 180 degrees) to improve the thermal efficiency of the heater element 110, to target heating of specific portions of the light modulator structure 102, and / or to enable a specific spacing between the light modulator structure and the optical waveguide structures 104a and / or 104b.

[0118] As mentioned above, Figure 6A-6G Provided as an example only. Other examples may differ Figure 6A-6G Different from what is described in .

[0119] Figure 7is a flow chart of an example process 700 associated with forming a semiconductor photonic device as described herein. In some embodiments, the process is performed using one or more semiconductor processing tools (such as a deposition tool, an exposure tool, a development tool, an etching tool, a planarization tool, an ion implantation tool, an annealing tool, a wafer / die transfer tool, and / or another type of semiconductor processing tool). Figure 7 One or more process blocks.

[0120] like Figure 7 As shown, process 700 may include forming a light modulator structure in a semiconductor layer of a semiconductor photonic device (block 710). For example, as described herein, one or more semiconductor processing tools may be used to form a light modulator structure (e.g., light modulator structure 102) in a semiconductor layer (e.g., semiconductor layer 204) of a semiconductor photonic device (e.g., semiconductor photonic device 100).

[0121] like Figure 7 As further shown, process 700 may include forming a heater element of a modulator heater structure adjacent to the light modulator structure (block 720). For example, one or more semiconductor processing tools may be used to form a heater element (e.g., heater element 110) of a modulator heater structure (e.g., modulator heater structure 106) adjacent to the light modulator structure, as described herein. In some embodiments, the heater element is formed to include a plurality of segments (e.g., two or more segments 112a-112e). In some embodiments, the plurality of segments are connected by one or more connector segments (116a-116d) of the heater element. In some embodiments, the plurality of segments are arranged in groups of segments. In some embodiments, one or more of the plurality of segments are curved segments. In some embodiments, two or more of the plurality of segments are straight segments extending substantially parallel to each other.

[0122] like Figure 7 As further shown, process 700 may include forming distribution pads coupled to the heater element (block 730). For example, as described herein, one or more semiconductor processing tools may be used to form distribution pads (e.g., distribution pads 108a, 108b) coupled to the heater element.

[0123] Process 700 may include additional implementations, such as any single implementation or any combination of implementations described below and / or implementations related to one or more other processes described elsewhere herein.

[0124] In a first embodiment, forming the heater element includes forming the heater element to conform to a top-view shape of the light modulator structure.

[0125] In a second embodiment, alone or in combination with the first embodiment, the top view shape of the light modulator structure is at least one of substantially circular, substantially rectangular, substantially triangular, substantially inverted circular, or substantially elliptical.

[0126] In a third embodiment, alone or in combination with one or more of the first and second embodiments, forming the heater element includes forming the heater element such that the heater element is located below the light modulator structure.

[0127] In a fourth embodiment, alone or in combination with one or more of the first to third embodiments, forming the heater element includes forming the heater element such that the heater element is located above the light modulator structure.

[0128] In a fifth embodiment, alone or in combination with one or more of the first to fourth embodiments, forming the heater element includes forming the heater element such that the heater element laterally surrounds the light modulator structure.

[0129] although Figure 7 Example blocks of process 700 are shown, but in some implementations, process 700 includes Figure 7 The blocks shown may be additional blocks, fewer blocks, different blocks, or blocks in a different arrangement. Additionally or alternatively, two or more blocks of process 700 may be executed in parallel.

[0130] In this way, the heater element of the modulator heater structure includes multiple segments. The segments of the heater element can be arranged in various configurations that conform to or differ from the shape of the light modulator structure. The segments of the heater element increase the effective length of the heater element and reduce the cross-sectional area of ​​the current path through the heater element. The combination of increased length and reduced cross-sectional area increases the resistance of the heater element, which enables the heater element to dissipate current more efficiently than a continuous heater element. The increase in the thermal efficiency of the heater element enables the heater element to heat up faster and generate heat more efficiently than a continuous heater element. Therefore, the increase in the thermal efficiency of the heater element enables the heater element to more effectively stabilize the operating temperature of the light modulator structure, which can improve the performance of the light modulator structure.

[0131] As described in more detail above, some embodiments described herein provide a semiconductor photonic device. The semiconductor photonic device includes a light modulator structure. The semiconductor photonic device includes a modulator heater structure adjacent to the light modulator structure. The modulator heater structure includes a distribution pad and a heater element adjacent to the light modulator structure and electrically coupled to the distribution pad. The heater element includes a plurality of segments, wherein at least a subset of the segments extend side by side with each other.

[0132] In some embodiments, the plurality of segments include: a first segment having a first end electrically coupled to the distribution pad; and a second segment, wherein a second end of the first segment opposite the first end is electrically coupled to the second segment.

[0133] In some embodiments, the second end of the first segment is physically coupled to a connector segment connecting the first segment and the second segment.

[0134] In some embodiments, the plurality of segments includes a third segment, wherein the second end of the first segment is electrically coupled to the third end of the second segment, and wherein a fourth end of the second segment opposite the third end is electrically coupled to the third segment.

[0135] In some embodiments, the third end of the second segment is physically coupled to a first connector segment connecting the first segment and the second segment; and wherein the fourth end of the second segment is physically coupled to a second connector segment connecting the second segment and the third segment.

[0136] In some embodiments, the first connector section is located on a first side of the heater element; and wherein the second connector section is located on a second side of the heater element opposite the first side.

[0137] As described in more detail above, some embodiments described herein provide a semiconductor photonic device. The semiconductor photonic device includes an optical modulator structure. The semiconductor photonic device includes a modulator heater structure adjacent to the optical modulator structure. The modulator heater structure includes a plurality of distribution pads and a heater element adjacent to the optical modulator structure and electrically coupled to the plurality of distribution pads. The heater element includes a first curved segment, a second curved segment, and a third curved segment, the third curved segment being electrically coupled to the first curved segment and to the second curved segment. A first portion of the third curved segment extends along the first curved segment, and a second portion of the third curved segment extends along the second curved segment.

[0138] In some embodiments, the first curved segment is electrically coupled to a first distribution pad among the plurality of distribution pads at a first end of the first curved segment; and wherein the second curved segment is electrically coupled to a second distribution pad among the plurality of distribution pads at a second end of the second curved segment.

[0139] In some embodiments, the third curved segment is electrically coupled to the third end of the first curved segment and to the fourth end of the second curved segment.

[0140] In some embodiments, the first curved segment is mirrored relative to the second curved segment.

[0141] In some embodiments, the first portion of the third curved segment extends along the first curved segment; and wherein the second portion of the third curved segment extends along the second curved segment.

[0142] In some embodiments, the heater element further includes a fourth bent segment extending along the first bent segment and electrically coupled to the first bent segment and the first distribution pad of the plurality of distribution pads.

[0143] In some embodiments, the heater element further includes a fifth bent segment extending along the second bent segment and electrically coupled to the second bent segment and a second distribution pad of the plurality of distribution pads.

[0144] In some embodiments, the first bend segment and the third bend segment are electrically coupled together through a first connector segment of the heater element; wherein the second bend segment and the third bend segment are electrically coupled together through a second connector segment of the heater element; wherein the first connector segment and the second connector segment are separated by a gap; and wherein the gap is located at a first side of the heater element opposite to a second side of the heater element, and the heater element is electrically coupled to the plurality of distribution pads at the second side.

[0145] As described in greater detail above, some embodiments described herein provide a method for forming a semiconductor photonic device. The method includes forming a light modulator structure in a semiconductor layer of the semiconductor photonic device. The method includes forming a heater element of a modulator heater structure adjacent to the light modulator structure, wherein the heater element is formed to include a plurality of segments, wherein the plurality of segments are connected by one or more connector segments of the heater element. The method includes forming a distribution pad coupled to the heater element.

[0146] In some embodiments, forming the heater element includes forming the heater element to conform to a top-view shape of the light modulator structure.

[0147] In some embodiments, the top-view shape of the light modulator structure is at least one of: a generally annular shape, a generally rectangular shape, a generally triangular shape, a generally oblong shape, or a generally elliptical shape.

[0148] In some embodiments, forming the heater element includes forming the heater element such that the heater element is located below the light modulator structure.

[0149] In some embodiments, forming the heater element includes forming the heater element such that the heater element is located over the light modulator structure.

[0150] In some embodiments, forming the heater element includes forming the heater element such that the heater element laterally surrounds the light modulator structure.

[0151] The terms "approximately" and "substantially" may refer to a value of a given quantity that varies within 5% of the value (e.g., ±1%, ±2%, ±3%, ±4%, ±5%). These values ​​are merely examples and are not intended to be limiting. It should be understood that, in accordance with the present disclosure, the terms "approximately" and "substantially" may refer to a percentage of the value of a given quantity.

[0152] The features of several embodiments are summarized above so that those skilled in the art can better understand the various aspects of the present disclosure. Those skilled in the art will appreciate that they can easily use the present disclosure as a basis for designing or modifying other processes and structures for achieving the same purpose and / or achieving the same advantages of the embodiments introduced herein. Those skilled in the art will also appreciate that such equivalent structures do not depart from the spirit and scope of the present disclosure, and that they can make various changes, substitutions, and modifications in the present disclosure without departing from the spirit and scope of the present disclosure.

Claims

1. A semiconductor photonic device comprising: Light modulator structure; as well as a modulator heater structure adjacent to the light modulator structure, the modulator heater structure comprising: Distribution pads; and a heater element adjacent to the light modulator structure and electrically coupled to the distribution pad, wherein the heater element comprises a plurality of segments, and Therein, at least a subset of the segments extend alongside one another.

2. The semiconductor photonic device according to claim 1, wherein The plurality of sections include: a first segment having a first end electrically coupled to the distribution pad; and The second section, A second end of the first segment opposite to the first end is electrically coupled to the second segment.

3. The semiconductor photonic device according to claim 2, wherein The second end of the first segment is physically coupled to a connector segment connecting the first segment and the second segment.

4. The semiconductor photonic device according to claim 2, wherein: The plurality of sections include: The third section, wherein the second end of the first segment is electrically coupled to the third end of the second segment, and A fourth end of the second segment opposite to the third end is electrically coupled to the third segment.

5. The semiconductor photonic device according to claim 4, wherein The third end of the second segment is physically coupled to a first connector segment connecting the first segment and the second segment; and The fourth end of the second segment is physically coupled to a second connector segment connecting the second segment and the third segment.

6. The semiconductor photonic device according to claim 5, wherein the first connector section being located on a first side of the heater element; and Wherein, the second connector section is located on a second side of the heater element opposite to the first side.

7. A semiconductor photonic device comprising: Light modulator structure; as well as a modulator heater structure, adjacent to the light modulator structure, comprising: multiple distribution pads; and a heater element adjacent to the light modulator structure and electrically coupled to the plurality of distribution pads, comprising: a first curved section; a second curved segment; and a third curved segment electrically coupled to the first curved segment and electrically coupled to the second curved segment, wherein the first portion of the third curved section extends along the first curved section, and The second portion of the third curved section extends along the second curved section.

8. The semiconductor photonic device according to claim 7, wherein: The first bent section is electrically coupled to a first distribution pad of the plurality of distribution pads at a first end of the first bent section; and The second bent section is electrically coupled to a second distribution pad among the plurality of distribution pads at a second end of the second bent section.

9. The semiconductor photonic device according to claim 7, wherein: the first curved segment and the third curved segment being electrically coupled together by a first connector segment of the heater element; wherein the second curved section and the third curved section are electrically coupled together via a second connector section of the heater element; wherein the first connector section and the second connector section are separated by a gap; and wherein the gap is located at a first side of the heater element opposite a second side of the heater element at which the heater element is electrically coupled to the plurality of distribution pads.

10. A method of forming a semiconductor photonic device, comprising: forming a light modulator structure in a semiconductor layer of a semiconductor photonic device; forming a heater element of a modulator heater structure adjacent to the light modulator structure, wherein the heater element is formed to include a plurality of segments, and wherein the plurality of segments are connected by one or more connector segments of the heater element; and Distribution pads are formed that are coupled to the heater elements.

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