Liquid processing apparatus, liquid processing method, and computer-readable storage medium

Abstract

The invention provides a liquid processing apparatus, a liquid processing method, and a computer-readable storage medium. An example of a liquid processing apparatus includes: a substrate holding unit configured to be capable of holding a substrate; a processing liquid supply unit configured to be capable of supplying a processing liquid to the surface of the substrate; a gas supply unit configured so as to be capable of supplying a gas to the surface of the substrate; and a control unit. The gas supply portion includes a diffusion nozzle formed with a plurality of ejection ports extending at respective different angles with respect to a surface of the substrate. In a state where the processing liquid is supplied to the surface of the substrate, the control unit controls the processing of the gas supply unit such that the gas is ejected from the diffusion nozzle to a region including at least the central portion of the surface of the substrate. According to the invention, the in-plane temperature distribution of the substrate can be more uniformly controlled.

Description

[0001] This application is a divisional application of the patent application with application number 202011464044.1, application date December 14, 2020, and invention title "Liquid processing apparatus, liquid processing method, and computer-readable storage medium". TECHNICAL FIELD

[0002] The present disclosure relates to a liquid processing apparatus, a liquid processing method, and a computer-readable storage medium. BACKGROUND

[0003] Patent Literature 1 discloses a developing device configured to develop a resist film formed on a surface of a substrate by supplying a developing solution to the surface of the substrate. The developing device includes a blower that blows air adjusted to a prescribed temperature from above to the substrate, and a temperature regulator that maintains a chuck device and a developing solution supply pipe to the prescribed temperature by circulating temperature-adjusted water to the prescribed temperature.

[0004] Prior Art Documents

[0005] Patent Literature

[0006] Patent Literature 1: Japanese Patent Application Publication No. 2004-274028 SUMMARY

[0007] Problems to be Solved by the Invention

[0008] In the developing device of Patent Literature 1, the temperature of the substrate at the time of development is controlled to a fixed temperature by the blower and the temperature regulator. However, since heat release is easily promoted from the peripheral portion of the substrate, there is a case where a temperature difference occurs in the plane of the substrate by such control. Therefore, the developing speed differs in the plane of the substrate, which can cause unevenness in the line width of the resist pattern in the plane of the substrate.

[0009] Therefore, the present disclosure describes a liquid processing apparatus, a liquid processing method, and a computer-readable storage medium that can more uniformly control the temperature distribution in the plane of a substrate.

[0010] Technical Solution to Solve the Problem

[0011] An example of a liquid processing apparatus has a substrate holding portion configured to be able to hold a substrate, a processing liquid supply portion configured to be able to supply a processing liquid to a surface of the substrate, a gas supply portion configured to be able to supply a gas to the surface of the substrate, and a control portion. The gas supply portion includes a diffusion nozzle formed with a plurality of spray outlets extending at respective different angles with respect to the surface of the substrate. The control portion executes control of the gas supply portion so that the gas is sprayed from the diffusion nozzle to a region of the surface of the substrate containing at least a central portion, in a state where the surface of the substrate is supplied with the processing liquid.

[0012] Inventive Effects

[0013] The liquid processing apparatus, the liquid processing method, and the computer-readable storage medium according to the present disclosure can more uniformly control the in-plane temperature distribution of the substrate. BRIEF DESCRIPTION OF DRAWINGS

[0014] Figure 1 is a perspective view showing an example of a substrate processing system.

[0015] Figure 2 is a side view schematically showing the inside of a substrate processing system of Figure 1

[0016] Figure 3 is a plan view schematically showing the inside of a substrate processing system of Figure 1

[0017] Figure 4 is a side view schematically showing an example of a liquid processing unit.

[0018] Figure 5 is a side view showing an example of a nozzle unit.

[0019] Figure 6 is a block diagram showing an example of a controller.

[0020] Figure 7 is a schematic diagram showing an example of a hardware configuration of a controller.

[0021] Figure 8 is a flowchart for explaining an example of a sequence of liquid processing of a substrate.

[0022] Figure 9 is a diagram for explaining a liquid processing method of a substrate.

[0023] Figure 10 is a diagram for explaining a liquid processing method of a substrate.

[0024] Figure 11 is a side view showing another example of a nozzle unit.

[0025] Figure 12 is a side view showing another example of the operation of a nozzle unit.

[0026] Figure 13 is a diagram showing an in-plane line width distribution of a resist pattern formed on a surface of a substrate, in which Figure 13 (a) in FIG. 7 shows the in-plane line width distribution of Example 1, Figure 13 (b) in FIG. 7 shows the in-plane line width distribution of Example 2.

[0027] Figure 14 ​​is a graph showing an in-plane line width distribution of a resist pattern formed on a surface of a substrate, Figure 14 (a) in (a) shows an in-plane line width distribution of Example 3, Figure 14 (b) in (b) shows an in-plane line width distribution of a comparative example.

[0028] Figure 15 is a graph showing a deviation (relative 3σ) of an in-plane line width distribution of each of Examples 1 to 3 and the comparative example.

[0029] Explanation of symbols

[0030] 1…substrate processing system, 2…coating and developing device (liquid processing device), 20…substrate holding portion, 30…supply portion (processing liquid supply portion), 31…supply mechanism, 40…supply portion (gas supply portion, cleaning liquid supply portion, dry gas supply portion), 41A to 41C…supply mechanism, 43…nozzle unit, 43a…shower head, 43c…nozzle (diffusion nozzle), Ctr…controller (control portion), G1…cooling gas (gas), G2…dry gas, H…housing, L1…processing liquid, L2…processing liquid (cleaning liquid), PM4…processing module, RM…storage medium, U1…liquid processing unit (liquid processing device), V1, V2…exhaust portion, W…substrate, Wa…surface. DETAILED DESCRIPTION

[0031] In the following description, the same reference numerals are used for the same elements or elements having the same function, and repeated description is omitted.

[0032] [Substrate processing system]

[0033] First, reference will be made to Figures 1-3 The configuration of the substrate processing system 1 will be described. The substrate processing system 1 has a coating and developing device 2 (liquid processing device), an exposure device 3, and a controller Ctr (control portion).

[0034] The exposure device 3 is configured to be able to transfer the substrate W between the coating and developing device 2 and perform exposure processing (pattern exposure) of a resist film R formed on a surface Wa (see Figure 4 and the like) of the substrate W. The exposure device 3 can selectively irradiate an energy ray to an exposure target portion of the resist film R, for example, by a liquid immersion exposure method or the like.

[0035] Energy rays may include, for example, ionizing radiation and non-ionizing radiation. Ionizing radiation is radiation with sufficient energy to ionize atoms or molecules. Examples of ionizing radiation include extreme ultraviolet (EUV), electron beams, ion beams, X-rays, α-rays, β-rays, γ-rays, heavy particle beams, and proton beams. Non-ionizing radiation is radiation that does not have sufficient energy to ionize atoms or molecules. Examples of non-ionizing radiation include g-rays, i-rays, KrF excimer lasers, ArF excimer lasers, and F2 excimer lasers.

[0036] The coating and developing device 2 is configured to form a resist film R on the surface Wa of the substrate W before the exposure process by the exposure device 3. The coating and developing device 2 is configured to develop the resist film R after the exposure process.

[0037] The substrate W may be in the form of a circular sheet or a non-circular sheet such as a polygon. The substrate W may also have a partially cutout portion. The cutout portion may be, for example, a notch (a U-shaped or V-shaped groove) or a straight portion extending in a straight line (a so-called orientation line). The substrate W may be, for example, a semiconductor substrate (silicon wafer), a glass substrate, a mask substrate, an FPD (Flat Panel Display) substrate, or other various substrates. The diameter of the substrate W may be, for example, approximately 200 mm to 450 mm.

[0038] like Figures 1-3 As shown, the coating and developing device 2 includes a carrier assembly 4, a processing assembly 5 and an interface assembly 6. The carrier assembly 4, the processing assembly 5 and the interface assembly 6 are arranged in a horizontal direction.

[0039] The carrier assembly 4 includes a carrier station 12 and a loading / unloading unit 13. The carrier station 12 supports a plurality of carriers 11. A carrier 11 stores at least one substrate W in a sealed state. A door (not shown) for loading and unloading substrates W is provided on a side 11a of the carrier 11. The carrier 11 is detachably mounted on the carrier station 12, with the side 11a facing the loading / unloading unit 13.

[0040] The feeding and discharging section 13 is located between the carrier station 12 and the processing assembly 5. The feeding and discharging section 13 is as follows: Figure 1 and Figure 3 As shown, there are multiple opening and closing doors 13a. When the carrier 11 is placed on the carrier station 12, the opening and closing door of the carrier 11 faces the opening and closing door 13a. By opening the opening and closing door 13a and the opening and closing door of the side 11a at the same time, the inside of the carrier 11 and the inside of the delivery unit 13 are connected. Figure 2 and Figure 3As shown, the in-out section 13 is provided with a transport arm Al. The transport arm Al is configured to take out the substrate W from the carrier 11 and deliver it to the processing assembly 5, and receive the substrate W from the processing assembly 5 and return it to the carrier 11.

[0041] As shown, the processing assembly 5 includes processing modules PM1 to PM4. Figure 2 and Figure 3 As shown, the processing assembly 5 includes processing modules PM1 to PM4.

[0042] The processing module PM1 is configured to be capable of forming a lower layer film on the surface of the substrate W, and is also called a BCT module. The processing module PM1 includes a liquid processing unit Ul, a heat processing unit U2, and a transport arm A2 configured to transport the substrate W to them, as shown. Figure 3 The liquid processing unit Ul of the processing module PM1 can be configured to be capable of applying a coating liquid for forming a lower layer film to the substrate W, for example. The heat processing unit U2 of the processing module PM1 can be configured to perform a heating process for curing a coating film formed on the substrate W by the liquid processing unit Ul to become a lower layer film, for example. As the lower layer film, an anti-reflection (SiARC) film can be cited, for example.

[0043] The processing module PM2 is configured to be capable of forming an intermediate film (hard mask) on the lower layer film, and is also called an HMCT module. The processing module PM2 includes a liquid processing unit Ul, a heat processing unit U2, and a transport arm A3 configured to transport the substrate W to them. The liquid processing unit Ul of the processing module PM2 can be configured to be capable of applying a coating liquid for forming an intermediate film to the substrate W, for example. The heat processing unit U2 of the processing module PM2 can be configured to be capable of performing a heating process for curing a coating film formed on the substrate W by the liquid processing unit Ul to become an intermediate film, for example. As the intermediate film, a Spin On Carbon (SOC) film, an amorphous carbon film can be cited, for example.

[0044] The processing module PM3 is configured to be capable of forming a thermosetting and photosensitive resist film R on the intermediate film, and is also called a COT module. The processing module PM3 includes a liquid processing unit Ul, a heat processing unit U2, and a transport arm A4 configured to transport the substrate W to them. The liquid processing unit Ul of the processing module PM3 can be configured to be capable of applying a coating liquid (resist liquid) for forming a resist film to the substrate W, for example. The heat processing unit U2 of the processing module PM3 can be configured to be capable of performing a heating process (PAB: Pre Applied Bake) for curing a coating film formed on the substrate W by the liquid processing unit Ul to become a resist film R, for example.

[0045] The resist liquid contains either a positive resist material or a negative resist material. The positive resist material is a resist material that remains in the pattern-unexposed portion (light-shielded portion) after the pattern-exposed portion is dissolved. The negative resist material is a resist material that remains in the pattern-exposed portion after the pattern-unexposed portion (light-shielded portion) is dissolved.

[0046] The processing module PM4 is configured to perform a development process of the exposed resist film, and is also referred to as a DEV module. The processing module PM4 includes a liquid processing unit U1, a heat processing unit U2, and a transport arm A5 configured to transport the substrate W to them. The liquid processing unit U1 of the processing module PM4 can be configured to form a resist pattern (not shown) by partially removing the resist film R, for example. The heat processing unit U2 of the processing module PM4 can be configured to perform a heating process before the development process (PEB: Post Exposure Bake), a heating process after the development process (PB: Post Bake), and the like, for example.

[0047] As shown in Figure 2 and Figure 3 The processing assembly 5 includes a shelf unit 14 located in the vicinity of the transport assembly 4. The shelf unit 14 extends in the vertical direction and includes a plurality of levels arranged in the vertical direction. A transport arm A6 is provided in the vicinity of the shelf unit 14. The transport arm A6 is configured to raise and lower the substrate W between the levels of the shelf unit 14.

[0048] The processing assembly 5 includes a shelf unit 15 located in the vicinity of the interface assembly 6. The shelf unit 14 extends in the vertical direction and includes a plurality of levels arranged in the vertical direction.

[0049] The interface assembly 6 is built-in with a transport arm A7 connected to the exposure device 3. The transport arm A7 is configured to take out the substrate W of the shelf unit 15 and hand over to the exposure device 3, and receive the substrate W from the exposure device 3 and return to the shelf unit 15.

[0050] The controller Ctr is configured to locally or integrally control the coating and developing device 2. Details of the controller Ctr will be described later. The controller Ctr can be configured to transmit and receive signals with the controller of the exposure device 3, and integrally control the substrate processing system 1 in cooperation with the controller of the exposure device 3.

[0051] [LIQUID PROCESSING UNIT]

[0052] Next, the liquid processing unit U1 (liquid processing device) of the processing module PM4 will be described in further detail with reference to Figure 4 and Figure 5 , As shown in Figure 4As shown, the liquid processing unit U1 includes a substrate holding section 20, a supply section 30 (a processing liquid supply section), a supply section 40 (a gas supply section, a cleaning liquid supply section, a drying gas supply section), a cover member 50, and a blower B in the housing H. An exhaust section V1 is provided in a lower portion of the housing H, and is configured to be able to exhaust gas in the housing H by acting based on a signal from the controller Ctr. The exhaust section V1 can be, for example, a throttle valve that is able to adjust the exhaust amount according to the opening degree. By adjusting the exhaust amount from the housing H using the exhaust section V1, it is possible to control the temperature, pressure, humidity, and the like in the housing H. The exhaust section V1 can also be controlled to always exhaust the housing H during liquid processing of the substrate W.

[0053] The substrate holding section 20 includes a rotating section 21, a transmission shaft 22, and a holding section 23. The rotating section 21 is configured to rotate the transmission shaft 22 by acting based on an action signal from the controller Ctr. The rotating section 21 is, for example, a power source such as an electric motor. The holding section 23 is provided to a front end portion of the transmission shaft 22. The substrate W can be disposed on the holding section 23. The holding section 23 is configured to be able to hold the substrate W to be substantially horizontal by, for example, adsorption or the like. That is, the substrate holding section 20 rotates the substrate W around a central axis (a rotation axis) that is perpendicular with respect to the surface Wa of the substrate W in a state in which the attitude of the substrate W is substantially horizontal.

[0054] The supply section 30 is configured to be able to supply the processing liquid L1 to the surface Wa of the substrate W. The processing liquid L1 can be, for example, a developing liquid.

[0055] The supply section 30 includes a supply mechanism 31, a driving mechanism 32, and a nozzle 33. The supply mechanism 31 is configured to be able to send out the processing liquid L1 stored in a container (not shown) by a liquid sending mechanism (not shown) such as a pump based on a signal from the controller Ctr. The driving mechanism 32 is configured to be able to move the nozzle 33 in the height direction and the horizontal direction based on a signal from the controller Ctr. The nozzle 33 is configured to be able to discharge the processing liquid L1 supplied from the supply mechanism 31 toward the surface Wa of the substrate W.

[0056] The supply section 40 is configured to be able to supply the processing liquid L2, the cooling gas G1 (a gas), and the drying gas G2 to the surface Wa of the substrate W. The processing liquid L2 can be, for example, a rinsing liquid (a cleaning liquid). The cooling gas G1 and the drying gas G2 are not particularly limited as long as they are gases, and can be inert gases (for example, nitrogen). The temperature of the cooling gas G1 and the drying gas G2 can be around 20°C to 25°C.

[0057] The supply section 40 includes supply mechanisms 41A to 41C, a driving mechanism 42, and a nozzle unit 43. As shown in FIG. 2, the supply mechanisms 41A to 41C are configured to be able to supply the processing liquid L2, the cooling gas G1, and the drying gas G2 to the surface Wa of the substrate W based on a signal from the controller Ctr. Figure 4 and Figure 5As shown, the supply mechanism 41A is configured to be able to send out the treatment liquid L2 stored in a container (not shown) by a liquid sending mechanism (not shown) such as a pump based on a signal from the controller Ctr. The supply mechanism 41B is configured to be able to send out the cooling gas G1 stored in a container (not shown) by a gas sending mechanism (not shown) such as a pump based on a signal from the controller Ctr. The supply mechanism 41C is configured to be able to send out the dry gas G2 stored in a container (not shown) by a gas sending mechanism (not shown) such as a pump based on a signal from the controller Ctr. The drive mechanism 42 is configured to be able to move the nozzle unit 43 in the height direction and the horizontal direction based on a signal from the controller Ctr.

[0058] The nozzle unit 43 is configured to be able to discharge the treatment liquid L2, the cooling gas G1, and the dry gas G2 supplied from the supply mechanisms 41A to 41C to the surface Wa of the substrate W, respectively. As shown, Figure 5 The nozzle unit 43 includes a shower head 43a and nozzles 43b to 43d. The shower head 43a is configured to integrally hold the nozzles 43b to 43d.

[0059] The nozzle 43b is fluidly connected to the container of the supply mechanism 41A. Therefore, the nozzle 43b is configured to be able to discharge the treatment liquid L2 supplied from the supply mechanism 41A to the surface Wa of the substrate W.

[0060] The nozzle 43c (diffusion nozzle) is fluidly connected to the container of the supply mechanism 41B. Therefore, the nozzle 43c is configured to jet the cooling gas G1 supplied from the supply mechanism 41B to the surface Wa of the substrate W. A plurality of jet outlets extending at respective different angles with respect to the surface Wa of the substrate W are formed at the front end portion (lower end portion) of the nozzle 43c. Therefore, the cooling gas G1 jetted from the nozzle 43c diffuses in a manner of expanding in a direction (horizontal direction) orthogonal to the length direction of the nozzle 43c as it moves away from the front end portion of the nozzle 43c. The plurality of jet outlets can extend in a manner of expanding in a radial manner. The front end portion of the nozzle 43c can be Figure 5 as shown, in a semispherical shape. The nozzle 43c can be Figure 5 The nozzle 43d can be disposed between the nozzles 43b and 43d as in the example, or can be disposed at the end of the three nozzles 43b to 43d. Alternatively, the nozzles 43b to 43d can be disposed in a ring shape.

[0061] The nozzle 43d is fluidly connected to the container of the supply mechanism 41C. Therefore, the nozzle 43d is configured to be able to jet the dry gas G2 supplied from the supply mechanism 41C to the surface Wa of the substrate W.

[0062] As shown, Figure 4As shown, the cover member 50 is provided around the substrate holding portion 20. The cover member 50 includes a cup-shaped body 51, a liquid discharge port 52, and an exhaust port 53. The cup-shaped body 51 serves as a liquid collection container for receiving the processing liquids L1 and L2 supplied to the substrate W for processing the substrate W. The liquid discharge port 52 is provided at the bottom of the cup-shaped body 51 and is configured to discharge the waste liquid collected by the cup-shaped body 51 to the outside of the liquid processing unit U1.

[0063] The exhaust port 53 is provided at the bottom of the cup-shaped body 51. The exhaust port 53 is provided with an exhaust portion V2, which is configured to discharge the gas in the cup-shaped body 51 by operating based on a signal from the controller Ctr. Therefore, the downflow flowing around the substrate W is discharged to the outside of the liquid processing unit U1 through the exhaust port 53 and the exhaust portion V2. The exhaust portion V2 can be, for example, a throttle valve that can adjust the exhaust volume according to the opening degree. By adjusting the exhaust volume from the cup-shaped body 51 using the exhaust portion V2, the temperature, pressure, humidity, etc. in the cup-shaped body 51 can be controlled.

[0064] The blower B is arranged above the substrate holding portion 20 and the cover member 50 in the liquid processing unit U1. The blower B is configured to generate a downward flow toward the cover member 50 based on a signal from the controller Ctr. The blower B can also be controlled to generate a downward flow at all times during liquid processing of the substrate W.

[0065] [Controller details]

[0066] like Figure 6 As shown, the controller Ctr includes a reader M1, a storage M2, a processor M3, and an indicator M4 as functional modules. These functional modules simply divide the functions of the controller Ctr into multiple modules for convenience and do not necessarily mean that the hardware that constitutes the controller Ctr is divided into these modules. Each functional module is not limited to being implemented by executing a program; it can also be implemented by a dedicated circuit (such as a logic circuit) or an integrated circuit (ASIC) that integrates them.

[0067] The reading unit M1 is configured to read a program from a computer-readable storage medium RM. The storage medium RM stores a program for operating each component of the coating and developing device 2. The storage medium RM may be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or a magneto-optical recording disk.

[0068] The storage section M2 is configured to be able to store various data. The storage section M2 can store, for example, a program read out from the storage medium RM in the reading section Ml, setting data input by an operator via an external input device (not shown), and the like. The program can be configured to be able to cause each part of the coating developing device 2 to act. The storage medium RM can be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or an optical magnetic recording disk.

[0069] The processing section M3 is configured to be able to process various data. The processing section M3 can generate, for example, a signal for causing the liquid processing unit U1, the heat processing unit U2, and the like to act, based on various data stored in the storage section M2.

[0070] The instruction section M4 is configured to be able to transmit an actuation signal generated in the processing section M3 to various devices.

[0071] The hardware of the controller Ctr can be configured by one or a plurality of control-purpose computers, for example. As shown in FIG. 1, the controller Ctr includes a circuit C1 as a configuration on hardware. The circuit C1 can be configured by circuitry. The circuit C1 can include a processor C2, a memory C3, a storage C4, a driver C5, and an input / output port C6. Figure 7

[0072] The processor C2 cooperates with at least one of the memory C3 and the storage C4 to execute a program, performs input / output of a signal via the input / output port C6, thereby configuring each functional module described above. The memory C3 and the storage C4 function as the storage section M2. The driver C5 is a circuit that drives each device of the coating developing device 2, respectively. The input / output port C6 performs input / output of a signal between the driver C5 and each device of the coating developing device 2 (e.g., the liquid processing unit U1, the heat processing unit U2, and the like).

[0073] The substrate processing system 1 can include one controller Ctr or a controller group (control section) configured by a plurality of controllers Ctr. In the case where the substrate processing system 1 includes the controller group, each functional module described above can be realized by one controller Ctr or by a combination of two or more controllers Ctr. In the case where the controller Ctr is configured by a plurality of computers (circuit C1), each functional module described above can be realized by one computer (circuit C1) or by a combination of two or more computers (circuit C1). The controller Ctr can have a plurality of processors C2. In this case, each functional module described above can be realized by one processor C2 or by a combination of two or more processors C2.

[0074] [Method of liquid processing of substrate]

[0075] Next, the liquid processing method of the substrate will be described with reference to Figures 8-10 ​, the liquid processing method of the substrate W is described.

[0076] First, the controller Ctr controls each part of the coating and developing device 2 to process the substrate W in the processing modules PM1 to PM3. As a result, a resist film R is formed on the surface Wa of the substrate W (see FIG. Figure 8 Next, the controller Ctr controls the various parts of the coating and developing device 2 to transport the substrate W from the processing module PM3 to the exposure device 3. Next, a controller different from the controller Ctr controls the exposure device 3 to expose the resist film R formed on the surface Wa of the substrate W according to a predetermined pattern (see Figure 8 Step S12).

[0077] Next, the controller Ctr controls the various parts of the coating and developing device 2 to transport the substrate W from the exposure device 3 to the liquid processing unit U1 of the processing module PM4. As a result, the substrate W is held by the substrate holding portion 20. Then, the controller Ctr controls the supply portion 30 to supply the processing liquid L1 (developer) to the surface Wa of the substrate W, that is, the upper surface of the resist film R (see Figure 8 Step S13).

[0078] In step S13, the controller Ctr may control the supply unit 30 to supply the processing liquid L1 from the nozzle 33 to the surface Wa of the substrate W while the nozzle 33 moves horizontally above the substrate W that is not rotating. Figure 9 As shown in (a) of FIG. , the processing liquid L1 is sequentially supplied from one end to the other end of the substrate W. Alternatively, the controller Ctr may control the substrate holding portion 20 and the supply portion 30 to rotate the substrate W and supply the processing liquid L1 from the nozzle 33 to the surface Wa of the substrate W while moving the nozzle 33 horizontally above the substrate W. In this case, the processing liquid L1 is supplied in a spiral from the center to the periphery of the substrate W, or from the periphery to the center of the substrate W.

[0079] Next, the controller Ctr controls the supply unit 40 to supply the cooling gas G1 from the nozzle 43c to the surface Wa of the substrate W, that is, the upper surface of the processing liquid L1 (see FIG. Figure 8 In step S14, as Figure 9 As shown in (b) of FIG. , the cooling gas G1 is sprayed onto at least the central portion of the surface Wa of the substrate W. In this case, the processing liquid L1 on the surface Wa of the substrate W does not need to be blown away by the cooling gas G1. In other words, the surface Wa of the substrate W, to which the processing liquid L1 is supplied, does not need to be exposed by the spraying of the cooling gas G1.

[0080] The injection of the cooling gas G1 to the processing liquid L1 can be continued during the development of the resist film R. The injection of the cooling gas G1 to the processing liquid L1 can also be continued, for example, from the start of the supply of the processing liquid L1 to the surface Wa of the substrate W until the completion of the development, or until the start of the subsequent processing. In step S14, the controller Ctr can control the exhaust portion V2 to continue the supply of the cooling gas G1 to the surface Wa of the substrate W in a state where the exhaust from the inside of the cup-shaped body 51 is stopped or a state where the exhaust from the inside of the cup-shaped body 51 is continued.

[0081] Next, the controller Ctr controls the substrate holding portion 20 and the supply portion 40 to supply the processing liquid L2 (a rinse liquid) from the nozzle 43b to the surface Wa of the rotating substrate W, that is, the upper surface of the processing liquid L1 (see step S15 of FIG. 6). Figure 8 Figure 10 As a result, as shown in (a) of FIG. 7, the dissolved matter of the resist dissolved in the resist film R due to the reaction with the processing liquid L1 is washed away (exhausted) from the surface Wa of the substrate W together with the processing liquid L1 by the processing liquid L2. In this way, the resist pattern RP is formed on the surface Wa of the substrate W.

[0082] In step S15, the controller Ctr controls the supply portion 40 to move the nozzle 43b horizontally in a manner that the nozzle 43b moves from the center to the periphery of the substrate W above the substrate W. In step S15, the controller Ctr can control the exhaust portion V2 to continue the supply of the processing liquid L2 to the surface Wa of the substrate W in a state where the exhaust from the inside of the cup-shaped body 51 is continued. The amount of the exhaust from the inside of the cup-shaped body 51 in step S15 can be set to be larger than the amount of the exhaust from the inside of the cup-shaped body 51 in step S14.

[0083] Next, when the nozzle 43d reaches the approximate center of the substrate W, the controller Ctr controls the substrate holding portion 20 and the supply portion 40 to supply the dry gas G2 from the nozzle 43d to the surface Wa of the rotating substrate W (see step S16 of FIG. 6). Figure 8

[0084] As a result, the processing liquid L2 present in the approximate center of the substrate W is blown to the periphery and evaporated, and as shown in (b) of FIG. 7, a dry region D is formed in the central portion of the substrate W (see Figure 10 Figure 5 Figure 8 Here, the dry region D refers to a region in a state where the surface Wa of the substrate W is exposed due to the evaporation of the processing liquid L2, but also includes a case where a very small amount (for example, in the order of microliters) of droplets is attached to the surface Wa. This dry region D expands from the central portion of the substrate W to the periphery side by the centrifugal force generated by the rotation of the substrate W. After the dry region D is formed, the supply of the dry gas G2 from the nozzle 43d can also be stopped. ​​​​

[0085] In step S16, the dry gas G2 can also be supplied from the nozzle 43d while the supply of the treatment liquid L2 from the nozzle 43b is continued. In step S16, the controller Ctr can also control the exhaust portion V2 to perform the supply of the dry gas G2 to the surface Wa of the substrate W while the exhaust from the cup-shaped body 51 is continued. The amount of the exhaust from the cup-shaped body 51 in step S16 can be set to be larger than the amount of the exhaust from the cup-shaped body 51 in step S14.

[0086] On the other hand, the treatment liquid L2 on the surface Wa of the substrate W also spreads from the central portion of the substrate W to the peripheral portion side by the centrifugal force generated by the rotation of the substrate W. Then, after the treatment liquid L2 on the surface Wa of the substrate W is flung from the peripheral portion of the substrate W, the drying of the substrate W is completed. Through the above, the liquid treatment of the substrate W is ended.

[0087] [Effects]

[0088] According to the above example, the cooling gas G1 ejected from the nozzle 43c spreads over a wide range with respect to the region of the surface Wa of the substrate W including at least the central portion. Therefore, the vaporization of the treatment liquid Ll on the surface Wa of the substrate W can be promoted, and the central portion of the substrate W is cooled by the heat of the vaporization. Thus, it is difficult to generate a temperature difference between the central portion and the peripheral portion of the substrate W, so the in-plane temperature distribution of the substrate W can be controlled more uniformly.

[0089] According to the above example, the cooling gas G1 ejected from the nozzle 43c spreads over a wide range, so when the cooling gas G1 reaches the treatment liquid Ll on the substrate W, the impact of the cooling gas G1 on the treatment liquid Ll is extremely small. Therefore, the fluctuation or distortion of the treatment liquid Ll on the substrate W can be suppressed.

[0090] According to the above example, the nozzle 43c can include a tip portion formed with a plurality of ejection ports and having a semispherical shape. In this case, the cooling gas G1 is easily ejected from the nozzle 43c over a wide range and uniformly. Therefore, the region of the substrate W to which the cooling gas G1 is ejected can be cooled more uniformly.

[0091] According to the above example, the cooling gas G1 can be continuously ejected to the treatment liquid Ll during the development of the resist film R. In this case, the ejection of the cooling gas G1 from the nozzle 43c is performed between the supply of the treatment liquid Ll to the substrate W and the supply of the treatment liquid L2 to the substrate W. Therefore, the respective supplies are not hindered by the nozzle 43c. Thus, the series of liquid treatments can be smoothly performed.

[0092] According to the above example, the amount of exhaust from the cup-shaped body 51 in step S14 is set to be smaller than the amount of exhaust from the cup-shaped body 51 in steps S15, S16. In this case, when the cooling gas G1 is ejected from the nozzle 43c, the temperature drop at the peripheral portion of the substrate W can be suppressed. Thus, the in-plane temperature distribution of the substrate W can be further uniformly controlled.

[0093] According to the above example, the nozzles 43b to 43d are held to the same nozzle head 43a. Thus, the nozzle unit 43 can be intensified.

[0094] [Modified Example]

[0095] The disclosure of this specification should be considered as an example of all aspects and not a limitation. Various omissions, substitutions, changes, and the like can be made to the above example without departing from the scope of the claims and their spirit.

[0096] (1) The nozzle 43c can also have a shape other than a semispherical shape. For example, as shown in (a) of FIG. 17, the nozzle 43c can have a cylindrical shape. As shown in (b) of FIG. 17, the nozzle 43c can also have a prismatic shape. Although not shown, the nozzle 43c can also be configured to have multiple ejection ports formed in a flat surface or a curved surface. Figure 11 Figure 11 (1) The nozzle 43c can also have a shape other than a semispherical shape. For example, as shown in (a) of FIG. 17, the nozzle 43c can have a cylindrical shape. As shown in (b) of FIG. 17, the nozzle 43c can also have a prismatic shape. Although not shown, the nozzle 43c can also be configured to have multiple ejection ports formed in a flat surface or a curved surface.

[0097] (2) The multiple ejection ports of the nozzle 43c can also be formed in the entire circumferential surface of the nozzle 43c. Alternatively, the angle of the multiple ejection ports and / or the formation position on the circumferential surface of the nozzle 43c can be set in such a manner that the cooling gas G1 ejected from the multiple ejection ports does not hit the two nozzles 43b, 43d located on the side of the nozzle 43c.

[0098] (3) The opening area of the multiple ejection ports can also be set in such a manner that the flow rate of the cooling gas G1 when reaching the surface Wa (the upper surface of the processing liquid L1) of the substrate W is substantially the same, respectively, from the multiple ejection ports of the nozzle 43c. For example, the multiple ejection ports can be formed in the nozzle 43c in such a manner that the opening area of the ejection ports becomes larger as it goes from the tip (lower end) to the base end of the nozzle 43c. Alternatively, the multiple ejection ports can be formed in the nozzle 43c in such a manner that the number of ejection ports becomes larger as it goes from the tip (lower end) to the base end of the nozzle 43c for the purpose of obtaining the same effect.

[0099] (4) In step S14, the amount of exhaust from the cup-shaped body 51 can also be set in such a manner that the temperature of the substrate W at the peripheral portion of the substrate W is lower than the temperature of the substrate W at the center portion of the substrate W. Figure 12 ​As illustrated in (a) in FIG. 12, the nozzle 43c is located at a position eccentric from the center of rotation of the substrate W when viewed from the vertical direction. In this case, the range ARl of the cooling gas G1 sprayed from the nozzle 43c is also eccentric with respect to the center of rotation of the substrate W, but the cooling gas G1 is diffused over a larger range AR2 for the substrate W by the rotation of the substrate W. Therefore, the in-plane temperature distribution of the substrate W can be controlled more uniformly.

[0100] (5) In step S14, as illustrated in (b) in FIG. 12, the nozzle 43c is located at a position eccentric from the center of rotation of the substrate W when viewed from the vertical direction, and the nozzle 43c is moved horizontally. In this case, by the rotation of the substrate W plus the horizontal movement of the nozzle 43c, the cooling gas G1 is diffused over a larger range AR3 for the substrate W. Therefore, the in-plane temperature distribution of the substrate W can be controlled more uniformly. Figure 12

[0101] (6) In step S14, the controller Ctr can also control the supply section 40 to supply the cooling gas G1 to the central portion of the surface Wa of the substrate W for a longer time than to the peripheral portion of the surface Wa of the substrate W. In this case, the cooling of the central portion of the substrate W can be promoted more. Therefore, the in-plane temperature distribution of the substrate W can be controlled more uniformly.

[0102] (7) In step S14, the controller Ctr can also control the supply section 40 to supply the cooling gas G1 to the central portion of the surface Wa of the substrate W and not to supply the cooling gas G1 to the peripheral portion of the surface Wa of the substrate W. The range of the peripheral portion of the surface Wa of the substrate W to which the cooling gas G1 is not supplied can be, for example, about 3 cm to 5 cm from the periphery of the substrate W. In this case, the cooling of the central portion of the substrate W can be promoted more. Therefore, the in-plane temperature distribution of the substrate W can be controlled more uniformly.

[0103] (8) The supply of the drying gas G2 in step S16 can not be performed. In this case, the processing liquid L2 on the surface Wa of the substrate W can be spun off by the centrifugal force generated by the rotation of the substrate W, thereby drying the substrate W.

[0104] (9) Two of the nozzles 43b to 43d can be held to the nozzle head 43a, and the remaining nozzles can be separated from the nozzle head 43a. Or all of the nozzles 43b to 43d can be separated.

[0105] ​(10) In a case where the nozzle 43b, 43c is held to the shower head 43a, the supply processing of the treatment liquid L2 from the nozzle 43b and the supply processing of the cooling gas G1 from the nozzle 43c can be performed while the height of the shower head 43a is kept constant. In a case where the nozzle 43c, 43d is held to the shower head 43a, the supply processing of the cooling gas G1 from the nozzle 43c and the supply processing of the drying gas G2 from the nozzle 43d can be performed while the height of the shower head 43a is kept constant. In a case where the nozzle 43b to 43d is held to the shower head 43a, the supply processing of the treatment liquid L2 from the nozzle 43b, the supply processing of the cooling gas G1 from the nozzle 43c, and the supply processing of the drying gas G2 from the nozzle 43d can be performed while the height of the shower head 43a is kept constant. In these cases, the above series of processing is performed without the nozzles moving up and down. Therefore, the operation of the nozzles is simplified, and thus the efficiency of the liquid processing can be improved.

[0106] [Other Examples]

[0107] Example 1. An example of a liquid processing apparatus has: a substrate holding portion configured to hold a substrate; a treatment liquid supply portion configured to supply a treatment liquid to a surface of the substrate; a gas supply portion configured to supply a gas to the surface of the substrate; and a control portion. The gas supply portion includes a diffusion nozzle formed with a plurality of ejection ports extending at respective different angles with respect to the surface of the substrate. The control portion performs control of the processing of the gas supply portion so that the gas is ejected from the diffusion nozzle to a region of the surface of the substrate including at least a central portion, in a state where the treatment liquid is supplied to the surface of the substrate. In this case, the gas ejected from the diffusion nozzle diffuses over a wide range with respect to the region of the surface of the substrate including at least the central portion. Therefore, the vaporization of the treatment liquid on the surface of the substrate can be promoted, and the central portion of the substrate can be cooled by the heat of the vaporization. Thus, it is difficult to generate a temperature difference between the central portion and the peripheral portion of the substrate, and thus the in-plane temperature distribution of the substrate can be controlled more uniformly. Further, in this case, the gas ejected from the diffusion nozzle diffuses over a wide range, and thus the impact of the gas on the treatment liquid when the gas reaches the treatment liquid on the substrate is extremely small. Therefore, the fluctuation or distortion of the treatment liquid on the substrate can be suppressed.

[0108] Example 2. In the apparatus of Example 1, the diffusion nozzle can also include a tip portion formed with a plurality of ejection ports and in a hemispherical shape. In this case, the gas is easily ejected from the diffusion nozzle over a wide range and uniformly. Therefore, the region of the substrate to which the gas is ejected can be cooled more uniformly.

[0109] Example 3. In the apparatus of Example 1 or Example 2, the control section can also perform control of the gas supply section so that gas is sprayed from the diffusion nozzle toward the central portion of the surface of the substrate and gas is supplied for a longer time to the central portion than to the peripheral portion of the surface of the substrate, in a state in which the surface of the substrate is supplied with the processing liquid. In this case, cooling of the central portion of the substrate can be further promoted. Therefore, the in-plane temperature distribution of the substrate can be further uniformly controlled.

[0110] Example 4. In the apparatus of Example 3, the control section can also perform control of the gas supply section so that gas is sprayed from the diffusion nozzle toward the central portion of the surface of the substrate and no gas is sprayed from the diffusion nozzle toward the peripheral portion of the surface of the substrate, in a state in which the surface of the substrate is supplied with the processing liquid. In this case, cooling of the central portion of the substrate can be further promoted. Therefore, the in-plane temperature distribution of the substrate can be further uniformly controlled.

[0111] Example 5. In any of the apparatuses of Examples 1 to 4, the control section can also perform control of the gas supply section so that gas is sprayed from the diffusion nozzle toward a region including at least the central portion of the surface of the substrate, in a state in which the surface of the substrate is supplied with the processing liquid and the diffusion nozzle is eccentric from the center of rotation of the substrate as viewed in the vertical direction. In this case, by rotating the substrate during spraying of gas from the diffusion nozzle, gas from the diffusion nozzle can be diffused over a larger range of the substrate. Therefore, the in-plane temperature distribution of the substrate can be further uniformly controlled.

[0112] Example 6. The apparatus of Examples 1 to 6 further has a cleaning liquid supply section configured to be able to supply a cleaning liquid to the surface of the substrate, and the control section can also perform control of the cleaning liquid supply section so that the cleaning liquid is supplied to the surface of the substrate after control of the gas supply section. In this case, spraying of gas from the diffusion nozzle is performed between supply of the processing liquid to the substrate and supply of the cleaning liquid. Therefore, each of the supply processes is not hindered by the diffusion nozzle. Thus, a series of liquid processes can be smoothly performed.

[0113] Example 7. The apparatus of Example 6 further has an exhaust section configured to be able to exhaust an atmosphere around the substrate held by the substrate holding section, and the control section can also perform control of the exhaust section so that the amount of exhaust during control of the gas supply section is smaller than the amount of exhaust during control of the cleaning liquid supply section. In this case, a decrease in the temperature of the peripheral portion of the substrate when gas is sprayed from the diffusion nozzle can be suppressed. Therefore, the in-plane temperature distribution of the substrate can be further uniformly controlled.

[0114] Example 8. In the apparatus of Example 6 or Example 7, the nozzle of the cleaning liquid supply section is configured to be able to move integrally with the diffusion nozzle, and the control section can execute the process of controlling the gas supply section so that the surface of the substrate in the state of being supplied with the treatment liquid is not exposed due to the ejection of the gas from the diffusion nozzle, and the process of controlling the cleaning liquid supply section to discharge the treatment liquid supplied to the surface of the substrate, in a state where the height positions of the diffusion nozzle and the nozzle of the cleaning liquid supply section are both held constant. In this case, two nozzles are mounted on one shower head, and thus the apparatus can be made compact. Further, the above series of processes are performed in a manner in which the nozzles do not move up and down, and thus the operation of the nozzles is simplified, and thus the efficiency of the liquid process can be improved. Further, the surface of the substrate is not exposed due to the ejection of the gas from the diffusion nozzle, and thus the impact of the gas on the treatment liquid when the gas reaches the treatment liquid on the substrate is further reduced. Thus, the fluctuation or distortion of the treatment liquid on the substrate can be further suppressed.

[0115] Example 9. The apparatus of Example 7 or Example 8 further has a dry gas supply section configured to supply a dry gas to the surface of the substrate, and a shower head that holds the diffusion nozzle and the nozzle of the dry gas supply section, and the control section can execute the process of controlling the dry gas supply section so that the dry gas is ejected to the surface of the substrate to remove the cleaning liquid from the surface of the substrate, after the process of controlling the cleaning liquid supply section. In this case, two nozzles are mounted on one shower head, and thus the apparatus can be made compact.

[0116] Example 10. In any one of the apparatuses of Examples 7 to 9, the control section can execute the process of controlling the gas supply section, the process of controlling the cleaning liquid supply section, and the process of controlling the dry gas supply section, in a state where the height positions of the diffusion nozzle, the nozzle of the cleaning liquid supply section, and the nozzle of the dry gas supply section are all held constant. In this case, the above series of processes are performed in a manner in which the nozzles do not move up and down. Thus, the operation of the nozzles is simplified, and thus the efficiency of the liquid process can be improved.

[0117] Example 11. One example of a liquid processing method includes a step of supplying a treatment liquid to a surface of a substrate, and a step of ejecting a gas from a diffusion nozzle to a region including at least a central portion in the surface of the substrate in a state where the surface of the substrate is supplied with the treatment liquid, in which the diffusion nozzle is formed with a plurality of ejection ports extending at respective different angles with respect to the surface of the substrate. In this case, the same operational effects as those of the apparatus of Example 1 can be obtained.

[0118] Example 12. In the method of Example 11, the diffusion nozzle can include a tip portion formed with a plurality of ejection ports and in a semispherical shape. In this case, the same operational effects as those of the apparatus of Example 2 can be obtained.

[0119] Example 13. In the method of Example 11 or Example 12, the step of jetting the gas can further include a step of jetting the gas from the diffusion nozzle to the central portion of the surface of the substrate for a longer period of time than to the peripheral portion of the surface of the substrate, in a state where the surface of the substrate is supplied with the treatment liquid. In this case, the same operational effects as those of the apparatus of Example 3 can be obtained.

[0120] Example 14. In the method of Example 13, the step of jetting the gas can further include a step of supplying the gas from the diffusion nozzle to the central portion of the surface of the substrate without jetting the gas from the diffusion nozzle to the peripheral portion of the surface of the substrate, in a state where the surface of the substrate is supplied with the treatment liquid. In this case, the same operational effects as those of the apparatus of Example 4 can be obtained.

[0121] Example 15. In any one of the methods of Examples 11 to 14, the step of jetting the gas can further include a step of jetting the gas from the diffusion nozzle to a region of the surface of the substrate including at least the central portion, in a state where the surface of the substrate is supplied with the treatment liquid and the diffusion nozzle is offset from the center of rotation of the substrate as viewed in the vertical direction. In this case, the same operational effects as those of the apparatus of Example 5 can be obtained.

[0122] Example 16. Any one of the methods of Examples 11 to 15 can further include a step of supplying a cleaning liquid to the surface of the substrate after the step of jetting the gas. In this case, the same operational effects as those of the apparatus of Example 6 can be obtained.

[0123] Example 17. In the method of Example 16, the amount of exhaust gas from the atmosphere around the substrate during the jetting of the gas is smaller than the amount of exhaust gas from the atmosphere around the substrate during the supply of the cleaning liquid. In this case, the same operational effects as those of the apparatus of Example 7 can be obtained.

[0124] Example 18. The method of Example 16 or Example 17 can further include a step of jetting a drying gas to the surface of the substrate to remove the cleaning liquid from the surface of the substrate after the step of supplying the cleaning liquid, and the diffusion nozzle and the nozzle for supplying the drying gas can be held in the same shower head. In this case, the same operational effects as those of the apparatus of Example 9 can be obtained.

[0125] Example 19. In any one of the methods of Examples 16 to 18, the steps of jetting the gas, supplying the cleaning liquid, and supplying the drying gas are performed in a state where the height positions of the diffusion nozzle, the nozzle for supplying the cleaning liquid, and the nozzle for supplying the drying gas are held constant. In this case, the same operational effects as those of the apparatus of Example 10 can be obtained.

[0126] Example 20. A computer-readable storage medium can store a program for causing a liquid processing apparatus to execute the method of Examples 11 to 19. In this case, the same advantageous effects as the apparatus of Example 1 can be obtained. In the present specification, the computer-readable storage medium can include a non-transitory computer recording medium (for example, various main storage devices or auxiliary storage devices) and a transitory computer recording medium (for example, a data signal that can be provided via a network).

[0127] [EMBODIMENT]

[0128] Hereinafter, Examples 1 to 3 and Comparative Example will be described, but they are not a limitation on any of the examples disclosed in the present specification.

[0129] (Example 1)

[0130] In Example 1, the resist pattern RP was formed on the surface Wa of the substrate W having a diameter of 300 mm using the substrate processing system 1 described above in the order of steps S11 to S17. At this time, in step S14, the cooling gas G was sprayed toward the surface Wa of the substrate W for 140 seconds without rotating the substrate W in a state where the nozzle 43c was located on the center of rotation of the substrate W when viewed from the vertical direction.

[0131] (Example 2)

[0132] In Example 2, the resist pattern RP was formed on the surface Wa of the substrate W having a diameter of 300 mm using the substrate processing system 1 described above in the order of steps S11 to S17. At this time, in step S14, the cooling gas G was sprayed toward the surface Wa of the substrate W for 140 seconds in a state where the nozzle 43c was located at a position 50 mm eccentric from the center of rotation of the substrate W and the substrate W was rotated at 10 rpm when viewed from the vertical direction.

[0133] (Example 3)

[0134] In Example 3, the resist pattern RP was formed on the surface Wa of the substrate W having a diameter of 300 mm using the substrate processing system 1 described above in the order of steps S11 to S17. At this time, in step S14, the cooling gas G was sprayed toward the surface Wa of the substrate W for 140 seconds in a state where the nozzle 43c was moved horizontally in a manner of reciprocating three times at a position from 0 mm to 100 mm from the center of rotation of the substrate W when viewed from the vertical direction and the substrate W was rotated at 10 rpm.

[0135] (Comparative Example)

[0136] In the comparative example, the resist pattern RP was formed on the surface Wa of the substrate W having a diameter of 300 mm using the substrate processing system 1 described above in the order of steps Sll to S13, S15 to S17. That is, the cooling gas Gl was not sprayed from the nozzle 43c toward the surface Wa of the substrate W.

[0137] (Results)

[0138] The temperature difference between the maximum value and the minimum value of the in-plane temperature of the substrate W after 55 seconds from the start of the supply of the processing liquid LI to the surface Wa of the substrate W, that is, from step S13 was measured. As a result, the temperature difference in Example 1 was 1.03°C. The temperature difference in Example 2 was 0.49°C. The temperature difference in Example 3 was 0.52°C. The temperature difference in the comparative example was 1.13°C. Thus, it was confirmed that the in-plane temperature distribution of the substrate W was more uniform in Examples 1 to 3 than in the comparative example.

[0139] The in-plane line width distribution of the resist pattern RP formed on the surface Wa of the substrate W was measured for each of Examples 1 to 3 and the comparative example. The results are shown in Figure 13 and Figure 14 Further, the deviation (3σ) of the in-plane line width distribution was calculated for each of Examples 1 to 3 and the comparative example. Figure 15 The relative 3σ (relative 3σ) of each of Examples 1 to 3 and the comparative example, in which the 3σ in the comparative example was taken as 100, is shown.

[0140] As shown in Figures 13-15 , it was confirmed that the in-plane line width distribution was more uniform in Examples 1 to 3 than in the comparative example. In particular, in Example 2, the uniformity of the in-plane line width distribution was improved by 40.0% relative to the comparative example. In Example 3, the uniformity of the in-plane line width distribution was improved by 40.6% relative to the comparative example.

Claims

1. A liquid processing device, characterized in that: include: a substrate holding portion configured to hold a substrate; a processing liquid supply portion configured to supply a processing liquid to the surface of the substrate; a gas supply portion configured to supply gas to the surface of the substrate; and Control Department, The gas supply unit includes a diffusion nozzle, The diffusion nozzle sprays gas toward the surface of the substrate in a manner that the gas expands in a horizontal direction as it moves away from the front end. After the processing liquid is supplied to the surface of the substrate, the control unit performs processing to control the gas supply unit in a state where the processing liquid exists on the surface of the substrate, so that when the diffusion nozzle is located in a state eccentric from the rotation center of the substrate when viewed from the vertical direction, the gas is continuously sprayed from the diffusion nozzle to an area including at least a central part of the surface of the substrate.

2. The liquid processing device according to claim 1, wherein The control unit controls the gas supply unit in a state where the processing liquid is supplied to the surface of the substrate, so that the gas is sprayed from the diffusion nozzle to the surface of the substrate, and the gas is supplied to the central portion for a longer time than to the peripheral portion of the surface of the substrate.

3. The liquid processing device according to claim 2, wherein: The control unit controls the gas supply unit in a state where the processing liquid is supplied to the surface of the substrate, so that the gas is sprayed from the diffusion nozzle to the central portion of the surface of the substrate, while the gas is not sprayed from the diffusion nozzle to the peripheral portion of the surface of the substrate.

4. The liquid processing device according to any one of claims 1 to 3, wherein further comprising a cleaning liquid supply unit having a nozzle for supplying cleaning liquid to the surface of the substrate, The control unit controls the cleaning liquid supply unit after controlling the gas supply unit so as to supply the cleaning liquid to the surface of the substrate.

5. The liquid processing device according to claim 4, wherein: The nozzle of the cleaning liquid supply unit is configured to be movable integrally with the diffusion nozzle. The control unit controls the gas supply unit while the height positions of the diffusion nozzle and the nozzle of the cleaning liquid supply unit are maintained at a certain level, so that the surface of the substrate supplied with the treatment liquid is not exposed due to the injection of the gas from the diffusion nozzle, and controls the cleaning liquid supply unit to discharge the treatment liquid supplied to the surface of the substrate.

6. The liquid processing device according to claim 4, wherein: Also includes: a drying gas supply unit having a nozzle for supplying a drying gas to the surface of the substrate; and a shower head that holds the diffusion nozzle and the nozzle of the drying gas supply portion, After controlling the cleaning liquid supply unit, the control unit further controls the drying gas supply unit so as to spray the drying gas toward the surface of the substrate to remove the cleaning liquid from the surface of the substrate.

7. A liquid processing device, characterized in that: include: a substrate holding portion configured to hold a substrate; a processing liquid supply portion configured to supply a processing liquid to the surface of the substrate; a gas supply portion configured to supply gas to the surface of the substrate; a cleaning liquid supply portion configured to supply a cleaning liquid to the surface of the substrate; an exhaust portion configured to exhaust the atmosphere around the substrate held by the substrate holding portion; and Control Department, The gas supply unit includes a diffusion nozzle, The diffusion nozzle sprays gas toward the surface of the substrate in a manner that the gas expands in a horizontal direction as it moves away from the front end. The control unit performs the following processing, namely: After the treatment liquid is supplied to the surface of the substrate, in a state where the treatment liquid is present on the surface of the substrate, the gas supply unit is controlled so that the gas is sprayed from the diffusion nozzle to a region including at least a central portion of the surface of the substrate; After controlling the gas supply unit, controlling the cleaning liquid supply unit to supply the cleaning liquid to the surface of the substrate; and The exhaust unit is controlled so that the exhaust volume in the process of controlling the gas supply unit is smaller than the exhaust volume in the process of controlling the cleaning liquid supply unit.

8. The liquid processing device according to claim 7, wherein: Also includes: a drying gas supply unit having a nozzle for supplying a drying gas to the surface of the substrate; and a shower head that holds the diffusion nozzle and the nozzle of the drying gas supply portion, After controlling the cleaning liquid supply unit, the control unit further controls the drying gas supply unit so as to spray the drying gas toward the surface of the substrate to remove the cleaning liquid from the surface of the substrate.

9. The liquid processing device according to claim 8, wherein The control unit performs a process of controlling the gas supply unit, a process of controlling the cleaning liquid supply unit, and a process of controlling the drying gas supply unit while the height positions of the diffusion nozzle, the nozzle of the cleaning liquid supply unit, and the nozzle of the drying gas supply unit are all maintained constant.

10. A liquid treatment method, characterized in that: include: supplying a treatment liquid to the surface of the substrate; and After the treatment liquid is supplied to the surface of the substrate, in a state where the treatment liquid exists on the surface of the substrate, the diffusion nozzle is located eccentrically from the rotation center of the substrate relative to the surface of the substrate when viewed from a vertical direction, and the gas is continuously sprayed from the diffusion nozzle to an area at least including a central portion of the surface of the substrate in a manner that the gas expands in a horizontal direction as it moves away from the front end of the diffusion nozzle.

11. A liquid treatment method, characterized in that: include: supplying a treatment liquid to the surface of the substrate; and After the treatment liquid is supplied to the surface of the substrate, in a state where the treatment liquid is present on the surface of the substrate, a gas is sprayed from a diffusion nozzle toward a region including at least a central portion of the surface of the substrate in a manner such that the gas expands in a horizontal direction as the gas moves away from a front end portion of the diffusion nozzle; and After the step of spraying the gas, a step of supplying a cleaning liquid to the surface of the substrate is performed. The amount of exhaust from the atmosphere around the substrate when the gas is ejected is smaller than the amount of exhaust from the atmosphere around the substrate when the cleaning liquid is supplied.

12. A computer-readable storage medium, characterized in that: A program for causing a liquid processing apparatus to execute the liquid processing method according to claim 10 or 11 is stored.

Images