Power module and power equipment

Abstract

The embodiment of the invention provides a power module and power equipment, relates to the technical field of semiconductor packaging, and is used for reducing parasitic inductance in the power module. The power module comprises a first conductive plate, a second conductive plate, a third terminal, a first power transistor and a second power transistor. A portion of the first conductive plate serves as a first terminal. The second conductive plate and the first conductive plate are stacked, and a part of the second conductive plate serves as a second terminal. The third terminal is located on the side, facing the second conductive plate, of the first conductive plate and is insulated from the second conductive plate. The third terminal and the first terminal are stacked. The first power transistor is disposed between the first conductive plate and the second conductive plate. The first electrode of the first power transistor is electrically connected with the first conductive plate, and the second electrode of the first power transistor is electrically connected with the second conductive plate. The first pole of the second power transistor is electrically connected with the second conductive plate, and the second pole of the second power transistor is electrically connected with the third terminal.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor packaging, and in particular to a power module and a power device. BACKGROUND

[0002] The power module integrates multiple power transistors, and has the characteristics of high integration, convenient assembly and strong reliability compared with single tube packaging.

[0003] However, the number of power transistors contained in the power module is large, and the structure is also complex, and the parasitic inductance in the power module increases and can no longer be ignored. Especially as the switching speed and power output of the semiconductor elements in the power module are increasing, when the power transistor is turned off, the parasitic inductance generated in the power module is large. The generated parasitic inductance can induce a high voltage, increase the voltage stress of the power transistor, and may damage the power transistor of the power module, etc., reducing the reliability of the power module. SUMMARY

[0004] The purpose of the present application is to provide a power module and a power device for reducing the parasitic inductance in the power module and improving the reliability of the power module.

[0005] The first aspect of the embodiment of the present application provides a power module, comprising a first conductive plate, a second conductive plate, a third terminal, a first power transistor and a second power transistor. A part of the first conductive plate serves as a first terminal. The second conductive plate is stacked with the first conductive plate, and a part of the second conductive plate serves as a second terminal. The third terminal is located on the side of the first conductive plate facing the second conductive plate, and is insulated from the second conductive plate. The third terminal is stacked with the first terminal. The first power transistor is arranged between the first conductive plate and the second conductive plate. The first pole of the first power transistor is electrically connected with the first conductive plate, and the second pole of the first power transistor is electrically connected with the second conductive plate. The second power transistor is arranged on the second conductive plate. The first pole of the second power transistor is electrically connected with the second conductive plate, and the second pole of the second power transistor is electrically connected with the third terminal.

[0006] When the power module works, the first power transistor and the second power transistor are in an alternating conduction state, and the battery is connected through the first terminal and the third terminal. After the direct current is converted into alternating current through the power module, the alternating current is output through the second terminal. Alternatively, the alternating current is input to the second terminal, and the alternating current is converted into direct current through the power module, and the direct current is output through the first terminal and the third terminal. At this time, the direct current will flow through the first conductive plate, the first power transistor, the second conductive plate, the second power transistor and the third terminal.

[0007] That is, when the power module is working, current flows through the first power transistor and the second power transistor. In the related art, the first power transistor and the second power transistor are connected by a bonding wire. Since the bonding wire produced in the process is often a curved structure, the length of the bonding wire itself is greater than the straight-line distance between the two connection points. Therefore, in the bonding wire connection mode, the bonding wire is relatively long, the current path through the bonding wire is relatively long, and thus the parasitic inductance is relatively large.

[0008] In the power module provided by the embodiments of the present application, the second electrode of the first power transistor and the first electrode of the second power transistor are electrically connected by the second conductive plate. At this time, most of the current flows between the connection point of the second electrode of the first power transistor and the second conductive plate and the connection point of the first electrode of the second power transistor, that is, most of the current flows along the vertical path from the connection point of the second electrode of the first power transistor and the second conductive plate to the first electrode of the second power transistor and the second conductive plate. Compared with the connection by the curved bonding wire, when the current flows in the plate-shaped second conductive plate, the current path is relatively short, and the parasitic inductance is relatively small. In this way, the parasitic inductance of the power module is reduced, the voltage stress of the semiconductor element is reduced, the first power transistor or the second power transistor is prevented from being damaged due to excessive voltage stress, and the reliability of the power module is improved. In addition, the third terminal is insulated from the second conductive plate, which prevents the current from directly flowing from the second conductive plate to the third terminal without passing through the second power transistor, thereby preventing short circuit. The first terminal and the third terminal are stacked, and compared with the structure in which the first terminal and the third terminal are located in different regions in the direction parallel to the first conductive plate, the first terminal and the third terminal are stacked, thereby occupying less space in the direction parallel to the first conductive plate, and thus the width of the power module can be reduced, so as to optimize the structural layout of the power module and facilitate the reduction of the size of the power module.

[0009] In some embodiments of the present application, the second power transistor is arranged between the first conductive plate and the second conductive plate. The vertical projection of the first power transistor on the second conductive plate does not overlap with the vertical projection of the second power transistor on the second conductive plate. At this time, the thicknesses of the first power transistor and the second power transistor overlap, thereby reducing the total thickness of the power module. In addition, the second power transistor and the first power transistor are located at different positions between the first conductive plate and the second conductive plate, thereby reducing the wafer-to-wafer thermal coupling of the second power transistor and the first power transistor, and thus avoiding the problem of thermal reliability failure caused by high heat flux.

[0010] In some embodiments of the present application, the power module further comprises a third conductive plate. The second pole of the second power transistor and the third terminal are electrically connected with the third conductive plate, respectively. The first conductive plate is provided with a through hole penetrating through the first conductive plate, the third conductive plate is arranged in the through hole, and the third conductive plate is insulated from the first conductive plate. The third terminal is arranged in a stack with the first conductive plate and is electrically connected with the third conductive plate. After the second pole of the second power transistor is electrically connected with the third conductive plate, the second power transistor, the third conductive plate and the third terminal are in communication, thereby realizing the electrical connection between the second pole of the second power transistor and the third terminal. The third conductive plate is insulated from the first conductive plate, thereby preventing the short circuit caused by the direct electrical connection between the first conductive plate and the third terminal without passing through the first power transistor and the second power transistor. In some embodiments of the present application, the second power transistor is located on the side of the first power transistor facing the third terminal. At this time, the second power transistor is located between the first power transistor and the third terminal, and the current is transmitted from the first power transistor to the second conductive plate. The current is also transmitted to the third terminal through the second conductive plate and the second power transistor, or the current is transmitted from the third terminal to the second conductive plate through the second power transistor. The current is also transmitted to the first power transistor through the second conductive plate. At this time, the current must pass through the second power transistor. When the second power transistor in the middle of the current is located between the first power transistor and the third terminal, the total path of the current is short, the parasitic inductance is reduced, and the reliability of the power module is improved.

[0011] In some embodiments of the present application, the power module further comprises a first conductive column. The first conductive column is arranged between the third terminal and the third conductive plate, and the two ends of the first conductive column are electrically connected with the third terminal and the third conductive plate, respectively. By arranging the first conductive column on the side of the third conductive plate away from the first conductive plate, the distance between the third conductive plate and the third terminal is increased, that is, the distance between the third terminal and the first conductive plate in the thickness direction of the power module is increased, so that there can be a gap between the third terminal and the first conductive plate, avoiding the direct electrical connection between the third terminal and the first conductive plate.

[0012] In some embodiments of the present application, the power module comprises at least two second power transistors, at least two third terminals and at least two first conductive columns. The third terminal is electrically connected with the second power transistor through at least one first conductive column. When the current flows between the second power transistor and the battery, most of the current flows through the shortest current path when communicating with the battery. At this time, different second power transistors can be connected with the battery through the first conductive column and the third terminal which are close to them. Further reducing the current path. Further realizing the purpose of reducing parasitic inductance and improving the reliability of the power module.

[0013] In some embodiments of the present application, the second conductive plate comprises a third main body part and a second terminal electrically connected with the third main body part. After the power module converts the direct current into alternating current, the alternating current can be output through the second terminal of the second conductive plate; or by inputting alternating current to the second terminal, the alternating current is converted into direct current by the power module, and then the direct current is output through the first terminal and the second terminal.

[0014] In some embodiments of the present application, the third conductive plate is stacked on the side of the second conductive plate away from the first conductive plate, and a part of the third conductive plate serves as a third terminal. The second power transistor is arranged between the second conductive plate and the third conductive plate. The first pole of the second power transistor is electrically connected with the second conductive plate. The second pole of the second power transistor is electrically connected with the third conductive plate. The second pole of the first power transistor and the first pole of the second power transistor are electrically connected through the second conductive plate. At this time, the current flows between the connection between the second pole of the first power transistor and the second conductive plate and the connection between the first pole of the second power transistor and the second conductive plate, the current path is short, and the parasitic inductance is small.

[0015] In some embodiments of the present application, the power module further comprises an insulating layer. The insulating layer is arranged between the first conductive plate and the second conductive plate, and between the first terminal and the third terminal, and at least part of the first terminal and at least part of the third terminal are exposed out of the insulating layer. The part of the first terminal and the third terminal exposed out of the insulating layer is used for connecting with other devices (such as a circuit board, etc.). The insulating layer ensures that the first terminal and the third terminal are not directly conducted, and at the same time, the first power transistor is electrically insulated and protected. That is, the insulating layer can provide better electrical insulation protection for the power module. In addition, the insulating layer can also provide a certain supporting effect and provide a certain mechanical strength protection for the power module.

[0016] In some embodiments of the present application, the insulating layer is also arranged on the side of the first conductive plate and the third terminal. At this time, the insulating layer can ensure that the side of the first conductive plate and the third terminal is insulated from the outside, and at the same time, the creepage distance of the edge part of the first conductive plate and the third terminal is increased to prevent the sending of the creep phenomenon, thereby improving the electrical safety performance and meeting the safety requirements.

[0017] In some embodiments of the present application, the insulating layer is also arranged between the second conductive plate and the third conductive plate, and between the third conductive plate and the first conductive plate. The insulating layer ensures that the third conductive plate and the first conductive plate are insulated, thereby providing better electrical insulation protection.

[0018] In some embodiments of the present application, the power module comprises a first connecting hole. The first connecting hole penetrates the first terminal, the insulating layer, and the third terminal. The first connecting hole is used to accommodate a fixing member. By accommodating the fixing member in the first connecting hole, the first terminal and the third terminal are supported, so that the first terminal and the third terminal are prevented from being directly electrically connected after being close to each other due to force on the power module, thereby preventing short circuit.

[0019] In some embodiments of the present application, the first connecting hole is located on the insulating layer and penetrates the insulating layer. The first conductive plate comprises a first main body portion and a first terminal electrically connected to the first main body portion. The first terminal is provided with a second connecting hole penetrating the first terminal. The first connecting hole and the second connecting hole are in communication, and the first connecting hole is exposed to the second connecting hole. The third terminal is provided with a third connecting hole penetrating the third terminal. The first connecting hole and the third connecting hole are in communication, and the first connecting hole is exposed to the third connecting hole. At this time, the first connecting hole can accommodate the fixing member, the second connecting hole and the third connecting hole are respectively used to accommodate two ends of the fixing member, and after the fixing member is arranged in the first connecting hole, the fixing member and the first terminal, and the fixing member and the third terminal are both provided with the insulating layer, so that the first terminal and the third terminal are prevented from being conducted through the fixing member, thereby preventing short circuit.

[0020] In some embodiments of the present application, the power module further comprises a plurality of first conductive strips. The plurality of first conductive strips are arranged in sequence and at intervals. Each first conductive strip is arranged on a side of the first power transistor facing the second conductive plate. The power module further comprises a plurality of second conductive strips. The plurality of second conductive strips are arranged in sequence and at intervals. Each second conductive strip is arranged on a side of the second power transistor facing the third conductive plate. The heat generated by the first power transistor during operation can also be transmitted to the first conductive strip, thereby cooling the first power transistor. Similarly, the heat generated by the second power transistor during operation can also be transmitted to the second conductive strip, thereby cooling the second power transistor. Thus, the problem of thermal reliability failure of the first power transistor and the second power transistor is improved.

[0021] In some embodiments of the present application, the second conductive plate has a plurality of first protruding portions on an end facing the first power transistor. The first protruding portions are electrically connected to at least one first conductive strip. The power module further comprises a plurality of first heat dissipation strips. The plurality of first heat dissipation strips are located between the first conductive strip and the second conductive plate, and the plurality of first heat dissipation strips are alternately arranged between adjacent two first protruding portions. By electrically connecting the first protruding portions to the first conductive strip, the electrical connection between the first conductive strip and the second conductive plate is achieved. The heat generated by the first power transistor during operation is transmitted to the first heat dissipation strip arranged between the adjacent two first protruding portions through the first conductive strip, and is dissipated through the first heat dissipation strip, thereby further improving the problem of thermal reliability failure of the first power transistor.

[0022] In some embodiments of the present application, the insulating layer is further arranged between the first heat dissipation strip and the first protruding part, and between the first heat dissipation strip and the first conductive strip; the first heat dissipation strip and the first protruding part are insulated from each other by the insulating layer, and the first heat dissipation strip and the first conductive strip are insulated from each other by the insulating layer. In this way, short circuit between different first conductive strips is prevented.

[0023] In some embodiments of the present application, the third conductive plate has a plurality of second protruding parts at one end thereof facing the second power transistor, and the second protruding parts are electrically connected with the at least one second conductive strip. The power module further comprises a plurality of second heat dissipation strips. The plurality of second heat dissipation strips are located between the second conductive strip and the third conductive plate, and the plurality of second heat dissipation strips are alternately arranged between adjacent two second protruding parts. By electrically connecting the second protruding parts with the second conductive strip, electrical connection between the second conductive strip and the third conductive plate is achieved. Heat generated by the second power transistor during operation is transmitted to the second heat dissipation strips arranged between adjacent two second protruding parts through the second conductive strip and the insulating layer, and is dissipated through the second heat dissipation strips, thereby further improving the problem of thermal reliability failure of the second power transistor.

[0024] In some embodiments of the present application, the insulating layer is further arranged between the second heat dissipation strip and the second protruding part, and between the second heat dissipation strip and the second conductive strip; the second heat dissipation strip and the second protruding part are insulated from each other by the insulating layer, and the second heat dissipation strip and the second conductive strip are insulated from each other by the insulating layer. In this way, short circuit between different second conductive strips is prevented.

[0025] In some embodiments of the present application, the power module further comprises a first heat dissipation layer. The first heat dissipation layer is arranged between the first power transistor and the first conductive plate, and the first conductive plate is electrically connected with the first pole of the first power transistor through the first heat dissipation layer. The power module further comprises a second heat dissipation layer. The second heat dissipation layer is arranged between the second power transistor and the second conductive plate, and the second conductive plate is electrically connected with the first pole of the second power transistor through the second heat dissipation layer. By the first heat dissipation layer, the first conductive plate is in conduction with the first pole of the first power transistor, and by the second heat dissipation layer, the second conductive plate is in conduction with the first pole of the second power transistor. In addition, heat generated by the first power transistor during operation can be dissipated through the first heat dissipation layer, thereby improving the heat dissipation effect of the first power transistor. Similarly, the heat dissipation layer can also improve the heat dissipation effect of the second power transistor. In this way, the problem of thermal reliability failure caused by high internal heat flux density of the power module is improved.

[0026] In some embodiments of the present application, the power module comprises a plurality of first power transistors connected in parallel with each other; and / or, the power module comprises a plurality of second power transistors connected in parallel with each other. For example, the power module comprises a plurality of first power transistors connected in parallel with each other; or, the power module comprises a plurality of second power transistors connected in parallel with each other; or, the power module comprises a plurality of first power transistors and a plurality of second power transistors connected in parallel with each other. By connecting a plurality of first power transistors in parallel, or connecting a plurality of second power transistors in parallel, the total resistance of the circuit is reduced, thereby increasing the size of the current converging on the second conductive plate.

[0027] In some embodiments of the present application, the power module further comprises a driving module. The driving module is electrically connected to the control end of the first power transistor and the control end of the second power transistor. The driving module is used to control the conduction or turn-off of the first power transistor and the second power transistor. By outputting a control signal to the control end of the first power transistor or the control end of the second power transistor through the driving module, the on-off of the current flowing through the first power transistor or the second power transistor is controlled in a cycle, thereby realizing the cycle change of the current direction transmitted to the second conductive plate, and realizing the conversion of direct current into alternating current transmitted to the second terminal.

[0028] In some embodiments of the present application, the first terminal and the second terminal are arranged on the side of the first power transistor and the second power transistor away from the driving module. In this way, the first terminal and the second terminal are arranged on the two sides of the first power transistor and the second power transistor, respectively, and neither the first terminal nor the second terminal will hinder the connection of the driving module with the first power transistor and the second power transistor, i.e., the driving module does not need to avoid the first terminal and the second terminal in space, which can optimize the overall layout of the power module, is conducive to reducing the size of the power module, and reducing the cost.

[0029] In the second aspect of the embodiments of the present application, a power device is provided, comprising a circuit board and the power module in any of the above embodiments. The circuit board comprises a first pole plate and a second pole plate arranged in layers. The first terminal and the third terminal of the power module are arranged between the first pole plate and the second pole plate. The power device has the same technical effects as the power module provided in the above embodiments, which will not be described here again.

[0030] In some embodiments of the present application, the power module further comprises an insulating layer and a fixing member. The insulating layer is arranged between the first terminal and the third terminal and connected with the first terminal and the third terminal. The insulating layer is provided with a first connecting hole penetrating the insulating layer. The first terminal is provided with a second connecting hole penetrating the first terminal. The first connecting hole and the second connecting hole are in communication, and the first connecting hole is exposed to the second connecting hole. The third terminal is provided with a third connecting hole penetrating the third terminal. The first connecting hole and the third connecting hole are in communication, and the first connecting hole is exposed to the third connecting hole. The fixing member is arranged in the first connecting hole, one end of the fixing member penetrates the second connecting hole and is connected with the first terminal and the first pole plate, and the other end of the fixing member penetrates the third connecting hole and is connected with the third terminal and the second pole plate. By arranging the fixing member in the first connecting hole and the second connecting hole, the first pole plate and the first terminal can be fixed relative to each other. At the same time, the fixing member can also fix the second pole plate and the third terminal relative to each other, so that the first pole plate and the first terminal are in abutment, and the electrical connection between the first pole plate and the first terminal is realized. BRIEF DESCRIPTION OF DRAWINGS

[0031] Figure 1A A structural schematic diagram of a vehicle is provided for embodiments of the present application;

[0032] Figure 1B Another structural schematic diagram of a vehicle is provided for embodiments of the present application;

[0033] Figure 1C Still another structural schematic diagram of a vehicle is provided for embodiments of the present application;

[0034] Figure 2A A structural schematic diagram of a power device is provided for embodiments of the present application;

[0035] Figure 2B A circuit diagram of a power device is provided for embodiments of the present application;

[0036] Figure 3 A structural schematic diagram of a first power module is provided for embodiments of the present application;

[0037] Figure 4 A structural schematic diagram of a second power module is provided for embodiments of the present application; Figure 3 A sectional view in the O1-O2 direction;

[0038] Figure 5 A connection schematic diagram of a bonding wire structure;

[0039] Figure 6 A bottom view in the Z direction; Figure 3

[0040] Figure 7 A sectional view of a second power module is provided for embodiments of the present application;

[0041] ​Figure 8 A schematic structural diagram of a second power module provided in an embodiment of the present application;

[0042] Figure 9 for Figure 8 Bottom view in the Z direction;

[0043] Figure 10 A cross-sectional view of a third power module provided in an embodiment of the present application;

[0044] Figure 11 A cross-sectional view of another power device provided in an embodiment of the present application;

[0045] Figure 12 A cross-sectional view of a fourth power module provided in an embodiment of the present application;

[0046] Figure 13 A schematic structural diagram of a fifth power module provided in an embodiment of the present application;

[0047] Figure 14 A cross-sectional view of a sixth power module provided in an embodiment of the present application;

[0048] Figure 15 A cross-sectional view of a seventh power module provided in an embodiment of the present application;

[0049] Figure 16 A cross-sectional view of an eighth power module provided in an embodiment of the present application;

[0050] Figure 17A An assembly diagram of a first power transistor and a first conductive strip provided in an embodiment of the present application;

[0051] Figure 17B A partial cross-sectional view of a ninth power module provided in an embodiment of the present application at the connection between the first power transistor and the second conductive plate;

[0052] Figure 17C for Figure 17B Cross-section in the P1-P2 direction;

[0053] Figure 18A An assembly diagram of a second power transistor and a second conductive strip provided in an embodiment of the present application;

[0054] Figure 18B A partial cross-sectional view of the tenth power module provided in an embodiment of the present application at the connection between the second power transistor and the third conductive plate;

[0055] Figure 18C for Figure 18B Cross-section in the Q1-Q2 direction;

[0056] Figure 19A cross-sectional view of a power module according to an eleventh embodiment of the present application;

[0057] Figure 20 A structural schematic view of a power module according to a twelfth embodiment of the present application.

[0058] Reference signs:

[0059] 100 - vehicle; 01 - battery; 02 - power device; 03 - load; 10 - power module; 20 - circuit board; 21 - first electrode plate; 22 - second electrode plate; 30 - fixing member; 101 - first terminal; 1011 - second connecting hole; 102 - third terminal; 1021 - third connecting hole; 103 - second terminal; 1031 - fifth connecting hole; 104 - first conductive plate; 1041 - avoiding hole; 1042 - first main body part; 105 - second conductive plate; 1051 - third main body part; 1052 - first protruding part; 106 - first power transistor; 1061 - first electrode of first power transistor; 1062 - second electrode of first power transistor; 1063 - control terminal of first power transistor; 107 - second power transistor; 1071 - first electrode of second power transistor; 1072 - second electrode of second power transistor; 1073 - control terminal of second power transistor; 108 - third conductive plate; 1081 - second protruding part; 109 - fourth conductive plate; 1091 - second main body part; 110 - first conductive column; 111 - insulating layer; 1111 - first connecting hole; 1112 - fourth connecting hole; 112 - first conductive strip; 113 - second conductive strip; 114 - first heat dissipation layer; 115 - second heat dissipation layer; 116 - driving module; 117 - second conductive column; 118 - first heat dissipation strip; 119 - second heat dissipation strip. DETAILED DESCRIPTION

[0060] The technical solutions in the embodiments of the present application will be described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all of the embodiments of the present application.

[0061] Hereinafter, the terms "first", "second", "third", "fourth", "fifth" and the like are used only to describe convenience and are not understood as indicating or implying relative importance or implying the number of the indicated technical features. Therefore, the features defined with "first", "second", "third", "fourth", "fifth" and the like can explicitly or implicitly include one or more of the features. In the description of the present application, unless otherwise specified, the meaning of "a plurality of" is two or more.

[0062] In the present application, unless specifically defined and limited otherwise, the term "connection" should be broadly understood, for example, "connection" can be a fixed mechanical connection, or a detachable mechanical connection, or integrated; or "connection" can be directly connected, or indirectly connected through an intermediate medium.

[0063] In the embodiments of the present application, the words "exemplarily", "for example" and the like are used to represent as an example, illustration or description. Any embodiment or design scheme described as "exemplarily", "for example" in the embodiments of the present application should not be interpreted as more preferred or more advantageous than other embodiments or design schemes. Rather, the words "exemplarily", "for example" and the like are intended to present the relevant concept in a specific manner.

[0064] In the drawings of the embodiments of the present application, components are represented by arrows; parts are represented by arrows; cavities, holes and other hollow structures are represented by curved arrows.

[0065] The embodiments of the present application provide a vehicle 100. As shown in Figure 1A The vehicle 100 can include a battery 01 and a power device 02 electrically connected to the battery 01.

[0066] The above power device 02 can include an inverter, for example, as shown in Figure 1B The battery 01 outputs a direct current to the power device 02, and the power device 02 is used to convert the direct current of the battery 01 into an alternating current and then transmit to a load 03 for the load 03 to work. Exemplarily, the load 03 is a motor, and the alternating current is transmitted to the motor, and the motor drives the drive axle to work, and then drives the car to run. At this time, the power device 02 can be a microcontroller unit (MCU) or a bidirectional on board charger (OBC).

[0067] The above power device 02 can include a rectifier, for example, as shown in Figure 1C An external charging device (not shown in the figure) outputs an alternating current to the power device 02, and the power device 02 is used to convert the alternating current of the external charging device (not shown in the figure) into a direct current and then transmit to the battery 01, and then charge the battery 01. At this time, the power device 02 can be an on board charger.

[0068] The above is an example of the application of the power device 02 in the vehicle 100. In other embodiments of the present application, the power device 02 can also be used in energy storage systems (such as photovoltaic systems, site energy, etc.), for converting the direct current of the battery 01 into an alternating current output, or for converting an alternating current into a direct current and then transmitting to the battery 01, and then charging the battery 01.

[0069] The following is an example of the structure of the power device 02. For the sake of convenience, the width of the power module 10 is extended in the X direction, the length is extended in the Y direction, and the thickness is extended in the Z direction. Figure 2A As shown, the power device 02 may include a power module 10 and a circuit board 20. The power module 10 may have a first terminal 101, a third terminal 102, and a second terminal 103. The circuit board 20 may include a first electrode plate 21 and a second electrode plate 22. One end of the first electrode plate 21 is electrically connected to the first terminal 101, and the other end is electrically connected to the battery 01 (e.g., Figure 1A As shown). One end of the second electrode plate 22 is electrically connected to the third terminal 102, and the other end is electrically connected to the battery 01. The positive electrode of the battery 01 can be electrically connected to the first terminal 101 through the first electrode plate 21; the negative electrode can be electrically connected to the third terminal 102 through the second electrode plate 22. Alternatively, the positive electrode of the battery 01 can be electrically connected to the third terminal 102 through the second electrode plate 22; the negative electrode can be electrically connected to the first terminal 101 through the first electrode plate 21. After the direct current is converted into alternating current by the power module 10, it is transmitted to the load 03 (as shown) through the second terminal 103. Figure 1B Alternatively, an external charging device transmits AC power to the second terminal 103, the power module 10 converts the AC current into DC current, and then transmits the DC current to the battery 01 through the first terminal 101 and the third terminal 102, thereby charging the battery 01.

[0070] like Figure 3 As shown, the power module 10 may further include a first conductive plate 104 and a second conductive plate 105. A portion of the first conductive plate 104 may serve as the first terminal 101. The second conductive plate 105 and the first conductive plate 104 may be stacked, and a portion of the second conductive plate 105 may serve as the second terminal 103. Figure 4 As shown, the power module 10 may further include a first power transistor 106 and a second power transistor 107. A first electrode 1061 of the first power transistor is electrically connected to the first conductive plate 104, and a second electrode 1062 of the first power transistor is electrically connected to the second conductive plate 105. A first electrode 1071 of the second power transistor is electrically connected to the second conductive plate 105, and a second electrode 1072 of the second power transistor is electrically connected to the third terminal 102.

[0071] When the power module 10 is working, the DC is converted into AC by the power module 10 and then output to the load 03 (eg, Figure 1B Alternatively, an external charging device inputs AC current to the second terminal 103, and after the power module 10 converts the AC current into DC current, the DC current is input to the battery 01 through the first terminal 101 and the third terminal 102 to charge the battery 01.

[0072] Specifically, as shown in Figure 2A and Figure 2B , the first conductive plate 104 receives the current from the positive pole of the battery 01 (as shown in Figure 1B ) as part of the first terminal 101. When the first power transistor 106 is turned on, the current is transmitted to the first pole 1061 of the first power transistor through the first conductive plate 104, and then transmitted to the second conductive plate 105 through the second pole 1062 of the first power transistor 106, that is, to the second terminal 103. When the second power transistor 107 is turned on, the current is transmitted to the first pole 1071 of the second power transistor through the second conductive plate 105, and then transmitted to the third terminal 102 through the second power transistor 107, and finally flows back to the negative pole of the battery 01. When the first power transistor 106 and the second power transistor 107 are turned on alternately, the alternating current is finally output through the second terminal 103.

[0073] Alternatively, in other embodiments of the present application, the positive pole of the battery 01 inputs direct current to the second power transistor 107 through the third terminal 102. When the second power transistor 107 is turned on, the current is transmitted to the second conductive plate 105 through the first pole 1061 of the first power transistor after passing through the second power transistor 107, that is, to the second terminal 103. When the first power transistor 106 is turned on, the current is transmitted to the second pole 1062 of the first power transistor through the second conductive plate 105, and then transmitted to the first conductive plate 104 through the first pole 1061 of the first power transistor. Finally, it flows back to the negative pole of the battery 01 through the first conductive plate 104 as part of the first terminal 101. Similarly, when the first power transistor 106 and the second power transistor 107 are turned on alternately, the alternating current is finally output through the second terminal 103.

[0074] In any of the above embodiments, the current needs to flow between the first power transistor 106 and the second power transistor 107. As shown in Figure 5 , when the first power transistor 106 and the second power transistor 107 are connected by a bonding wire, the bonding wire produced in the process is often a curved structure, and its length L1 is greater than the straight line distance L2 between the two connection points. Therefore, in the bonding wire connection mode, the bonding wire is longer, the current path through the bonding wire is longer, and the parasitic inductance is larger.

[0075] In the power module 10 provided by the embodiments of the present application, the second pole 1062 of the first power transistor and the first pole 1071 of the second power transistor are electrically connected through the second conductive plate 105. At this time, the current flows mostly between the connection of the second pole 1062 of the first power transistor and the second conductive plate 105 and the connection of the first pole 1071 of the second power transistor, that is, the current flows mostly along the vertical path from the connection of the second pole 1062 of the first power transistor and the second conductive plate 105 to the connection of the first pole 1071 of the second power transistor. Compared with the connection through the curved bonding wire, when the current flows in the plate-shaped second conductive plate 105, the current path is shorter and the parasitic inductance is smaller. In this way, the parasitic inductance of the power module 10 is reduced, the voltage stress of the semiconductor element is reduced, the first power transistor 106 or the second power transistor 107 is prevented from being damaged due to excessive voltage stress, and the reliability of the power module 10 is improved.

[0076] Exemplarily, the first pole 1061 of the first power transistor can be a drain or a collector, and the second pole 1062 of the first power transistor can be a source or an emitter. The first pole 1071 of the second power transistor can be a drain or a collector, and the second pole 1072 of the second power transistor can be a source or an emitter.

[0077] The structure of the power module 10 is further exemplified as follows. As shown in Figure 3 and Figure 4 The third terminal 102 is located on the side of the first conductive plate 104 facing the second conductive plate 105 and is insulated from the second conductive plate 105. The third terminal 102 is stacked with the first terminal 101. The third terminal 102 is insulated from the second conductive plate 105, which prevents the current from directly flowing from the second conductive plate 105 to the third terminal 102 without passing through the second power transistor 107, thereby causing short circuit. In addition, the first terminal 101 and the third terminal 102 are stacked. Compared with the structure in which the first terminal 101 and the third terminal 102 are located in different areas in the direction parallel to the first conductive plate 104, after the first terminal 101 and the third terminal 102 are stacked, the space occupied by the first terminal 101 and the third terminal 102 in the direction parallel to the first conductive plate 104 is smaller, thereby reducing the width of the power module 10, so as to optimize the structural layout of the power module 10 and facilitate the reduction of the size of the power module 10.

[0078] On this basis, the power module 10 is further exemplified as follows. As shown in Figure 3 and Figure 4As shown, the first power transistor 106 can be disposed between the first conductive plate 104 and the second conductive plate 105. The second power transistor 107 can also be disposed between the first conductive plate 104 and the second conductive plate 105. The vertical projection of the first power transistor 106 on the second conductive plate 105 does not overlap with the vertical projection of the second power transistor 107 on the second conductive plate 105. Since the second power transistor 107 and the first power transistor 106 are disposed on either side of the second conductive plate 105, respectively, the thickness of the power module 10 is greater than or equal to the total thickness of the second power transistor 107, the second conductive plate 105, the first power transistor 106, and the first conductive plate 104. In the embodiment of the present application, the second power transistor 107 and the first power transistor 106 are both disposed between the first conductive plate 104 and the second conductive plate 105, and the vertical projection of the first power transistor 106 on the second conductive plate 105 does not overlap with the vertical projection of the second power transistor 107 on the second conductive plate 105. That is, the thicknesses of the first power transistor 106 and the second power transistor 107 overlap, thereby reducing the overall thickness of the power module 10. Furthermore, the vertical projection of the first power transistor 106 on the second conductive plate 105 does not overlap with the vertical projection of the second power transistor 107 on the second conductive plate 105. That is, the second power transistor 107 and the first power transistor 106 are located at different positions between the first conductive plate 104 and the second conductive plate 105. This reduces inter-wafer thermal coupling between the second power transistor 107 and the first power transistor 106, prevents heat accumulation generated during operation of the second power transistor 107 and the first power transistor 106, and thus avoids thermal reliability failures due to high heat flux density.

[0079] Further, if Figure 6 As shown, in some embodiments of the present application, the power module 10 may further include a third conductive plate 108. The second electrode 1072 of the second power transistor is electrically connected to the third conductive plate 108. The first conductive plate 104 may be provided with an escape hole 1041 that passes through the first conductive plate 104. The third conductive plate 108 is disposed in the escape hole 1041, and the third conductive plate 108 is insulated from the first conductive plate 104. Figure 4As shown, the power module 10 can further include a third terminal 102. The third terminal 102 can be arranged in a stack with the first conductive plate 104 and electrically connected with the third conductive plate 108. The third terminal 102 is insulated from the second conductive plate 105. At this time, after the second pole 1072 of the second power transistor is electrically connected with the third conductive plate 108, the second power transistor 107, the third conductive plate 108 and the third terminal 102 are in communication, thereby realizing the electrical connection between the second pole 1072 of the second power transistor and the third terminal 102. The third conductive plate 108 is insulated from the first conductive plate 104, thereby preventing the short circuit caused by the direct electrical connection between the first conductive plate 104 and the third terminal 102 through the third conductive plate 108 without passing through the first power transistor 106 and the second power transistor 107. On this basis, the power module 10 can be continuously arranged as Figure 4 As shown, the second power transistor 107 can be located on the side of the first power transistor 106 facing the third terminal 102. At this time, the second power transistor 107 is located between the first power transistor 106 and the third terminal 102, and the current is transmitted from the first power transistor 106 to the second conductive plate 105. The current is also transmitted from the third terminal 102 to the second conductive plate 105 through the second power transistor 107, or the current is transmitted from the third terminal 102 to the second conductive plate 105 through the second power transistor 107. The current is also transmitted to the first power transistor 106 through the second conductive plate 105. At this time, the current must pass through the second power transistor 107. When the second power transistor 107 in the middle of the current is located between the first power transistor 106 and the third terminal 102, the total path of the current is relatively short, the parasitic inductance is reduced, and the reliability of the power module 10 is improved. In some embodiments of the present application, the power module 10 can be continuously arranged as Figure 4 As shown, the power module 10 can further include a first conductive column 110. The first conductive column 110 can be arranged between the third terminal 102 and the third conductive plate 108, and the two ends of the first conductive column 110 are electrically connected with the third terminal 102 and the third conductive plate 108, respectively. By arranging the first conductive column 110 on the side of the third conductive plate 108 away from the first conductive plate 104, the distance between the third conductive plate 108 and the third terminal 102 in the middle is increased, that is, the distance between the third terminal 102 and the first conductive plate 104 in the thickness direction of the power module 10 is increased, so that there can be a gap between the third terminal 102 and the first conductive plate 104, avoiding the direct electrical connection between the third terminal 102 and the first conductive plate 104.

[0080] In order to provide better electrical insulation protection for the power module 10, as Figure 7As shown, the power module 10 can further include an insulation layer 111. The insulation layer 111 can be disposed between the first conductive plate 104 and the second conductive plate 105, and between the first terminal 101 and the third terminal 102, and at least part of the first terminal 101 and at least part of the third terminal 102 are exposed from the insulation layer. The part of the first terminal 101 exposed from the insulation layer 111 is used to connect with the first pole plate 21 (as shown in Figure 2A ). The part of the third terminal 102 exposed from the insulation layer 111 is used to connect with the second pole plate 22 (as shown in Figure 2A ). The insulation layer 111 ensures the insulation between the first terminal 101 and the third terminal 102, and provides electrical insulation protection for the first power transistor 106 and the second power transistor 107. That is, the insulation layer 111 can provide better electrical insulation protection for the power module 10. In addition, the insulation layer 111 can also provide a certain supporting effect and provide a certain mechanical strength protection for the power module 10.

[0081] Further, as shown in Figure 7 , the insulation layer 111 can also be disposed between the third conductive plate 108 and the first conductive plate 104. The insulation layer 111 is connected with the first conductive plate 104, the second conductive plate 105, the third conductive plate 108 and the third terminal 102. The insulation layer 111 ensures the insulation between the third conductive plate 108 and the first conductive plate 104, and provides better electrical insulation protection.

[0082] On this basis, as shown in Figure 8 and Figure 9 , the insulation layer 111 can also be disposed on the periphery of the first conductive plate 104 and the third terminal 102. At this time, the insulation layer 111 can ensure the insulation between the periphery of the first conductive plate 104 and the third terminal 102 and the outside, and can increase the creepage distance of the edge part of the first conductive plate 104 and the third terminal 102, that is, increase the creepage distance of the edge part of the first terminal 101 and the third terminal 102, prevent the occurrence of creepage, and further improve the electrical safety performance and meet the safety requirements.

[0083] Of course, as shown in Figure 8 , the insulation layer 111 can also be disposed on the periphery of the second conductive plate 105. The creepage distance of the edge part of the second conductive plate 105 is increased to prevent the occurrence of creepage, and further improve the electrical safety performance and meet the safety requirements.

[0084] Further, as shown in Figure 8 and Figure 10As shown, the insulating layer 111 can be provided with a first connecting hole 1111 penetrating the insulating layer 111. The first conductive plate 104 can include a first main body portion 1042 and a first terminal 101 electrically connected to the first main body portion 1042. The first terminal 101 can be provided with a second connecting hole 1011 penetrating the first terminal 101, the first connecting hole 1111 and the second connecting hole 1011 are in communication, and the first connecting hole 1111 exposes the second connecting hole 1011. The third terminal 102 can be provided with a third connecting hole 1021 penetrating the third terminal 102, the first connecting hole 1111 and the third connecting hole 1021 are in communication, and the first connecting hole 1111 exposes the third connecting hole 1021. At this time, the insulating layer 111 is provided with the first connecting hole 1111, and the first connecting hole 1111 exposes the second connecting hole 1011 of the first terminal 101 and the third connecting hole 1021 of the third terminal 102.

[0085] In some embodiments of the present application, it is continued as Figure 10 As shown, the power module 10 can further include a fourth conductive plate 109. The fourth conductive plate 109 can include a second main body portion 1091 and a second signal terminal 102 electrically connected to the second main body portion 1091.

[0086] As shown, the power module 10 can further include a fourth conductive plate 109. The fourth conductive plate 109 can include a second main body portion 1091 and a second signal terminal 102 electrically connected to the second main body portion 1091. Figure 11As shown, the power device 02 can further include a fixing member 30, which is arranged in the first connecting hole 1111, one end of the fixing member 30 passes through the second connecting hole 1011 and is connected with the first terminal 101 and the first pole plate 21, and the other end of the fixing member 30 passes through the third connecting hole 1021 and is connected with the third terminal 102 and the second pole plate 22. Exemplarily, the fixing member 30 is connected with the first terminal 101 and the third terminal 102 through the insulating layer 111. By means of the fixing member 30 accommodated in the first connecting hole 1111, the first terminal 101 and the third terminal 102 are supported, so that the power module 10 is prevented from being subjected to stress, and the first terminal 101 and the third terminal 102 are prevented from being directly electrically connected after being close to each other to cause short circuit. Meanwhile, the first connecting hole 1111 is arranged on the insulating layer 111, and the first connecting hole 1111 exposes the second connecting hole 1011 of the first terminal 101 and the third connecting hole 1021 of the third terminal 102, so as to ensure that the two ends of the fixing member 30 arranged in the first connecting hole 1111 can pass through the second connecting hole 1011 and the third connecting hole 1021 respectively and be connected with the first terminal 101 and the third terminal 102 respectively. By means of the fixing member 30 arranged in the first connecting hole 1111 and the second connecting hole 1011, the first pole plate 21 and the first terminal 101 are relatively fixed, so that the first pole plate 21 and the first terminal 101 are abutted to realize electrical connection between the first pole plate 21 and the first terminal 101. Meanwhile, the second pole plate 22 and the third terminal 102 are also relatively fixed by the fixing member 30, so that the first pole plate 21 and the first terminal 101 are abutted to realize electrical connection between the first pole plate 21 and the first terminal 101.

[0087] Exemplarily, as shown in FIG. 1, Figure 11 As shown, the insulating layer 111 is further arranged between the fixing member 30 and the first pole plate 21, between the fixing member 30 and the second pole plate 22, between the fixing member 30 and the first terminal 101, and between the fixing member 30 and the third terminal 102. The first pole plate 21 and the second pole plate 22 are prevented from being directly electrically connected to cause short circuit by means of the insulating layer 111. The first terminal 101 and the third terminal 102 are prevented from being directly electrically connected to cause short circuit by means of the insulating layer 111.

[0088] Exemplarily, the fixing member 30 is made of insulating material, and the fixing member 30 is directly connected with the first pole plate 21, the second pole plate 22, the first terminal 101 and the third terminal 102.

[0089] In addition, as shown in FIG. 1, Figure 10As shown, the second conductive plate 105 may include a third main body 1051 and a second terminal 103 electrically connected to the third main body 1051. After the power module 10 converts DC into AC, it can be output through the second terminal 103 connected to the second conductive plate 105; or by inputting AC current into the second terminal 103, the power module 10 converts the AC into DC, and then outputs DC current through the first terminal and the second terminal.

[0090] Continue as Figure 10 As shown, the insulating layer 111 may be provided with a fourth connection hole 1112 that passes through the insulating layer 111. The second terminal 103 may be provided with a fifth connection hole 1031 that passes through the second terminal 103. The fourth connection hole 1112 is connected to the fifth connection hole 1031, and the fourth connection hole 1112 exposes the fifth connection hole 1031. The fourth connection hole 1112 is used to accommodate a connector (not shown in the figure) and is connected to the load 03 (such as Figure 1B as shown) or an external charging device.

[0091] To further reduce the parasitic inductance, such as Figure 12 As shown, the power module 10 may include at least two second power transistors 107, at least two third terminals 102, and at least two first conductive pillars 110. The third terminal 102 is electrically connected to the second power transistor 107 through at least one first conductive pillar 110. When the current flows between the second power transistor 107 and the battery 01 (e.g. Figure 1A When the current flows between the first and second terminals (shown in FIG. 1 ), most of the current flows through the shortest current path when connected to the battery 01. At this point, the second power transistor 107 can connect to the battery 01 via the first conductive pillar 110 and third terminal 102, which are closer to the transistor. This further shortens the current path, thereby reducing parasitic inductance and improving the reliability of the power module 10.

[0092] The following further illustrates another structure of the power module 10. Figure 13As shown, the power module 10 may further include a first conductive plate 104, a second conductive plate 105, a third conductive plate 108, a first power transistor 106, and a second power transistor 107. A portion of the first conductive plate 104 serves as a first terminal 101. The second conductive plate 105 is stacked on the first conductive plate 104 and electrically connected to the second terminal 103. The third conductive plate 108 is stacked on a side of the second conductive plate 105 facing away from the first conductive plate 104, and a portion of the third conductive plate 108 serves as a third terminal 102. The first power transistor 106 may be disposed between the first conductive plate 104 and the second conductive plate 105; a first electrode 1061 of the first power transistor is electrically connected to the first conductive plate 104, and a second electrode 1062 of the first power transistor is electrically connected to the second conductive plate 105. The second power transistor 107 may be disposed between the second conductive plate 105 and the third conductive plate 108 , with a first electrode 1071 of the second power transistor electrically connected to the second conductive plate 105 , and a second electrode 1072 of the second power transistor electrically connected to the third conductive plate 108 .

[0093] The second electrode 1062 of the first power transistor and the first electrode 1071 of the second power transistor are electrically connected via the second conductive plate 105. At this point, the majority of the current flows between the connection between the second electrode 1062 of the first power transistor and the second conductive plate 105, and between the connection between the first electrode 1071 of the second power transistor and the second conductive plate 105. In other words, the majority of the current flows along a perpendicular path between the connection between the second electrode 1062 of the first power transistor and the second conductive plate 105 and toward the first electrode 1071 of the second power transistor and the second conductive plate 105. Compared to a connection through a curved bonding wire, when current flows through the plate-shaped second conductive plate 105, the current path is shorter and the parasitic inductance is smaller.

[0094] Continue as Figure 13 As shown, the power module 10 may further include a second conductive pillar 117, the two ends of which are electrically connected to the second conductive plate 105 and the second terminal 103 respectively. The electrical connection between the second conductive plate 105 and the second terminal 103 is achieved through the second conductive pillar 117.

[0095] Furthermore, if Figure 14 As shown, the power module 10 may further include an insulating layer 111. The insulating layer 111 may be provided between the first conductive plate 104 and the second conductive plate 105, and between the first terminal 101 and the third terminal 102. At least a portion of the first terminal 101 leaks out of the insulating layer 111 and contacts the first electrode plate 21 (e.g., Figure 2A At least part of the third terminal 102 leaks out of the insulating layer 111 and is connected to the second electrode plate 22 (as shown). Figure 2AThe insulating layer 111 can provide electrical insulation protection to the periphery of the first power transistor 106, thereby providing better electrical insulation protection for the power module 10. In addition, the insulating layer 111 can also provide a certain degree of support, providing a certain degree of mechanical strength protection for the power module 10.

[0096] Continue as Figure 14 As shown, the insulating layer 111 may also be provided between the second conductive plate 105 and the third conductive plate 108. The insulating layer 111 ensures that the second conductive plate 105 and the third conductive plate 108 are not electrically connected, and at the same time provides electrical insulation protection for the peripheral side of the second power transistor 107.

[0097] In some embodiments of the present application, Figure 15 or Figure 16 As shown, the power module 10 may further include a plurality of first conductive strips 112. The plurality of first conductive strips 112 are arranged in a sequentially spaced arrangement. Each first conductive strip 112 is disposed on the side of the first power transistor 106 facing the second conductive plate 105. Heat dissipated by the first power transistor 106 during operation can also be transferred to the first conductive strips 112, thereby dissipating heat from the first power transistor 106. This can thereby alleviate thermal reliability failure issues associated with the first power transistor 106 and the second power transistor 107.

[0098] like Figure 17A As shown, the second electrode 1062 of the first power transistor is electrically connected to the second conductive plate 105 through a plurality of first conductive strips 112 .

[0099] For example, continue as Figure 17A As shown, a plurality of first conductive strips 112 are arranged in a matrix on the first power transistor 106. In another exemplary embodiment, the material of the first conductive strips 112 includes at least one of copper and aluminum.

[0100] Furthermore, if Figure 17B and Figure 17C As shown, the second conductive plate 105 has a plurality of first protrusions 1052 at one end facing the first power transistor, and the first protrusions 1052 are electrically connected to at least one first conductive strip 112. The power module further includes a plurality of first heat dissipation strips 118 located between the first conductive strip 112 and the second conductive plate 105, and the plurality of first heat dissipation strips 118 are alternately arranged between two adjacent first protrusions 1052. The electrical connection between the first conductive strip 112 and the second conductive plate 105 is achieved by the electrical connection between the first protrusions 1052 and the first conductive strip 112. The first power transistor 106 (as shown in FIG. 1 ) is electrically connected to the first conductive strip 112. Figure 15The heat generated by the first power transistor 106 during operation is transferred to the first heat dissipation strip 118 arranged between two adjacent first protruding parts 1052 through the first conductive strip 112 and the insulating layer 111, and is dissipated through the first heat dissipation strip 118, further improving the thermal reliability failure problem of the first power transistor.

[0101] Exemplarily, the material of the first heat dissipation strip 118 includes at least one of copper and aluminum.

[0102] As shown in Figure 17B and Figure 17C The insulating layer 111 can also be arranged between the first heat dissipation strip 118 and the first protruding part 1052, and between the first heat dissipation strip 118 and the first conductive strip 112. The first heat dissipation strip 118 and the first protruding part 1052 are relatively insulated by the insulating layer 111, and the first heat dissipation strip 118 and the first conductive strip 112 are relatively insulated by the insulating layer 111, thereby preventing short circuit between different first conductive strips 112.

[0103] Exemplarily, during processing, a layer of insulating material is first arranged on the first power transistor 106, then a plurality of through holes are formed in the insulating material, and the first conductive strip 112 is formed by electroplating or deposition in the through holes. Then a layer of insulating material is arranged on the side of the first conductive strip 112 away from the first power transistor 106, and a slot is further formed in the insulating material, and the first heat dissipation strip 118 is formed by electroplating or deposition in the slot. Then, a layer of insulating material is further arranged on the side of the first heat dissipation strip 118 away from the first conductive strip 112, and a slot hole is formed in the insulating material to expose the first conductive strip 112, and the first protruding part 1052 of the second conductive plate 105 extends into the slot hole and is electrically connected with the first conductive strip 112.

[0104] As shown in Figure 15 or Figure 16 The power module 10 can further include a plurality of second conductive strips 113. The plurality of second conductive strips 113 are arranged in sequence and at intervals. Each second conductive strip 113 is arranged on the side of the second power transistor 107 facing the third conductive plate 108. The heat generated by the second power transistor 107 during operation can also be transferred to the second conductive strip 113, thereby dissipating heat for the second power transistor 107. Further improving the thermal reliability failure problem of the first power transistor 106 and the second power transistor 107.

[0105] As shown in Figure 18A The second electrode 1072 of the second power transistor is electrically connected with the third conductive plate 108 through the plurality of second conductive strips 113.

[0106] Exemplarily, as shown in Figure 18AAs shown, the plurality of second conductive strips 113 are arranged in a matrix on the second power transistor 107. As an example, the material of the second conductive strips 113 includes at least one of copper and aluminum.

[0107] Further, as shown, Figure 18B and Figure 18C the third conductive plate 108 has a plurality of second protrusions 1081 at one end thereof facing the second power transistor 107, and the second protrusions 1081 are electrically connected to the at least one second conductive strip 113. The power module further includes a plurality of second heat dissipation strips 119. The plurality of second heat dissipation strips 119 are located between the second conductive strips 113 and the third conductive plate 108, and the plurality of second heat dissipation strips 119 are alternately arranged between two adjacent second protrusions 1081. The electrical connection between the second conductive strips 113 and the third conductive plate 108 is achieved by the electrical connection between the second protrusions 1081 and the second conductive strips 113. The heat generated by the second power transistor 107 (as shown in Figure 15 ) during operation is transferred to the second heat dissipation strips 119 arranged between two adjacent second protrusions 1081 through the second conductive strips 113 and the insulating layer 111, and is dissipated through the second heat dissipation strips 119, further improving the thermal reliability failure problem of the second power transistor.

[0108] As an example, the material of the second heat dissipation strips 119 includes at least one of copper and aluminum.

[0109] Continuing as shown, Figure 18B and Figure 18C the insulating layer 111 can also be arranged between the second heat dissipation strips 119 and the second protrusions 1081, and between the second heat dissipation strips 119 and the second conductive strips 113. The second heat dissipation strips 119 and the second protrusions 1081 are relatively insulated by the insulating layer 111, and the second heat dissipation strips 119 and the second conductive strips 113 are relatively insulated by the insulating layer 111. In this way, short circuits between different second conductive strips 113 are prevented.

[0110] As another example, during processing, a layer of insulating material is first arranged on the second power transistor 107, then a plurality of through holes are formed in the insulating material, and the second conductive strips 113 are formed by electroplating or deposition in the through holes. Then, a layer of insulating material is arranged on the side of the second conductive strips 113 away from the second power transistor 107, grooves are formed in the insulating material, and the second heat dissipation strips 119 are formed by electroplating or deposition in the grooves. Subsequently, a layer of insulating material is arranged on the side of the second heat dissipation strips 119 away from the second conductive strips 113, grooves are formed in the insulating material to expose the second conductive strips 113, and the second protrusions 1081 of the third conductive plate 108 are inserted into the grooves and electrically connected to the second conductive strips 113.

[0111] It can be understood that the extension direction of the first conductive strip 112 in the above embodiment can be any direction parallel to the one face of the first power transistor 106 toward the second conductive plate 105. Similarly, the extension direction of the second conductive strip 113 can be any direction parallel to the one face of the second power transistor 107 toward the third conductive plate 108.

[0112] To further improve the problem of high heat flow density inside the power module 10 leading to thermal reliability failure, the power module 10 can further include a first heat dissipation layer 114, as shown in Figure 15 or Figure 16 The first heat dissipation layer 114 can be arranged between the first power transistor 106 and the first conductive plate 104, and the first conductive plate 104 is electrically connected to the first pole 1061 of the first power transistor through the first heat dissipation layer 114. The first conductive plate 104 is turned on with the first pole 1061 of the first power transistor through the first heat dissipation layer 114. In addition, the heat generated by the first power transistor 106 during operation can be dissipated through the first heat dissipation layer 114, thereby improving the heat dissipation effect of the first power transistor 106. Further improve the problem of high heat flow density inside the power module 10 leading to thermal reliability failure.

[0113] Further, the power module 10 can further include a second heat dissipation layer 115, as shown in Figure 15 or Figure 16 The second heat dissipation layer 115 can be arranged between the second power transistor 107 and the second conductive plate 105, and the second conductive plate 105 is electrically connected to the first pole 1071 of the second power transistor through the second heat dissipation layer 115. The second conductive plate 105 is turned on with the first pole 1071 of the second power transistor through the second conductive plate 105. In addition, the heat generated by the second power transistor 107 during operation can be dissipated through the second heat dissipation layer 115, thereby improving the heat dissipation effect of the second power transistor 107. Further improve the problem of high heat flow density inside the power module 10 leading to thermal reliability failure.

[0114] The above Figure 15 or Figure 16In the shown embodiment, the first pole of the first power transistor 1061 and the second pole of the first power transistor 1062 are respectively located at two sides of the first power transistor 106, and the first pole of the second power transistor 1071 and the second pole of the second power transistor 1072 are respectively located at two sides of the second power transistor 107. In other embodiments of the present application, the first pole of the first power transistor 1061 and the second pole of the first power transistor 1062 are respectively located at the same side of the first power transistor 106. The first heat dissipation layer 114 can be electrically connected with the first pole of the first power transistor 1061 through a jumper wire or the like. Of course, the first pole of the second power transistor 1071 and the second pole of the second power transistor 1072 are respectively located at the same side of the second power transistor 107. The second heat dissipation layer 115 can be electrically connected with the first pole of the second power transistor 1071 through a jumper wire or the like.

[0115] In some embodiments of the present application, as shown in Figure 13 or Figure 19 The power module 10 can include a plurality of first power transistors 106 connected in parallel with each other; and / or, the power module 10 can include a plurality of second power transistors 107 connected in parallel with each other. Exemplarily, the power module 10 includes a plurality of first power transistors 106 connected in parallel with each other; or, the power module 10 includes a plurality of second power transistors 107 connected in parallel with each other; or, the power module 10 includes a plurality of first power transistors 106 and a plurality of second power transistors 107 connected in parallel with each other. By connecting a plurality of first power transistors 106 in parallel, or connecting a plurality of second power transistors 107 in parallel, the total resistance of the circuit is reduced, thereby increasing the size of the current converging onto the second conductive plate 105.

[0116] As shown in Figure 20 The power module 10 can further include a driving module 116. The driving module 116 can be electrically connected with the control end 1063 of the first power transistor (as shown in Figure 17A ) and the control end 1073 of the second power transistor (as shown in Figure 18A ). The driving module 116 is used to control the conduction or turn-off of the first power transistor 106 and the second power transistor 107. By outputting a control signal to the control end 1063 of the first power transistor or the control end 1073 of the second power transistor through the driving module 116, the on-off of the current flowing through the first power transistor 106 or the second power transistor 107 is controlled in a cycle, thereby realizing the cycle change of the current direction transmitted to the second conductive plate 105, and realizing the conversion of the direct current into alternating current to be transmitted to the second terminal 103.

[0117] For example, the control terminal 1063 of the first power transistor may be the gate of the first power transistor 106 , and the control terminal 1073 of the second power transistor may be the gate of the second power transistor 107 .

[0118] Further, continue as Figure 20 As shown, the first terminal 101 and the second terminal 103 can both be disposed on a side of the first power transistor 106 and the second power transistor 107 that is away from the driving module 116. In this way, the first terminal 101 and the second terminal 103 are disposed on both sides of the first power transistor 106 and the second power transistor 107, respectively, and the driving module 116 is disposed. The first terminal 101 and the second terminal 103 do not hinder the connection between the driving module 116 and the first power transistor 106 and the second power transistor 107. That is, the driving module 116 does not need to avoid the first terminal 101 and the second terminal 103 in space, which can optimize the overall layout of the power module 10, help reduce the size of the power module 10, and reduce costs.

[0119] Illustratively, in any of the above embodiments, the first power transistor 106 includes at least one of a metal oxide semiconductor field effect transistor (MOS), a fast recovery diode (FRD), an insulated gate bipolar transistor (IGBT), etc. The second power transistor 107 includes at least one of a metal oxide semiconductor field effect transistor, a fast recovery diode, an insulated gate bipolar transistor, etc.

[0120] The above is only a specific embodiment of the present application, but the scope of protection of this application is not limited to this. Any changes or substitutions within the technical scope disclosed in this application should be included in the scope of protection of this application. Therefore, the scope of protection of this application should be based on the scope of protection of the claims.

Claims

1. A power module, characterized in that: include: a first conductive plate, a portion of the first conductive plate serving as a first terminal; a second conductive plate stacked with the first conductive plate, a portion of the second conductive plate serving as a second terminal; a third terminal, located on a side of the first conductive plate facing the second conductive plate and insulated from the second conductive plate, the third terminal being stacked with the first terminal; a first power transistor, disposed between the first conductive plate and the second conductive plate, wherein a first electrode of the first power transistor is electrically connected to the first conductive plate, and a second electrode of the first power transistor is electrically connected to the second conductive plate; The second power transistor is disposed on the second conductive plate, a first electrode of the second power transistor is electrically connected to the second conductive plate, and a second electrode of the second power transistor is electrically connected to the third terminal.

2. The power module according to claim 1, characterized in that: The second power transistor is arranged between the first conductive plate and the second conductive plate; a vertical projection of the first power transistor on the second conductive plate does not overlap with a vertical projection of the second power transistor on the second conductive plate.

3. The power module according to claim 2, characterized in that: The power module further includes: A third conductive plate, the second electrode and the third terminal of the second power transistor are electrically connected to the third conductive plate respectively; wherein, a avoidance hole penetrating the first conductive plate is opened on the first conductive plate, the third conductive plate is arranged in the avoidance hole, and the third conductive plate is insulated from the first conductive plate.

4. The power module according to claim 3, characterized in that: The second power transistor is located on a side of the first power transistor facing the third terminal.

5. The power module according to claim 3, characterized in that: The power module further includes: The first conductive column is disposed between the third terminal and the third conductive plate, and two ends of the first conductive column are electrically connected to the third terminal and the third conductive plate respectively.

6. The power module according to claim 5, characterized in that: The power module includes at least two second power transistors, at least two third terminals, and at least two first conductive pillars. The third terminal is electrically connected to the second power transistor through at least one first conductive pillar.

7. The power module according to claim 1, characterized in that: The power module further includes: a third conductive plate, stacked on a side of the second conductive plate facing away from the first conductive plate, with a portion of the third conductive plate serving as the third terminal; the second power transistor being disposed between the second conductive plate and the third conductive plate, with a first electrode of the second power transistor being electrically connected to the second conductive plate, and a second electrode of the second power transistor being electrically connected to the third conductive plate.

8. The power module according to any one of claims 1 to 7, characterized in that: The power module further includes: The insulating layer is disposed between the first conductive plate and the second conductive plate, and between the first terminal and the third terminal, and at least a portion of the first terminal and at least a portion of the third terminal leak out of the insulating layer.

9. The power module according to claim 8, characterized in that: The power module includes a first connection hole, which passes through the first terminal, the insulating layer, and the third terminal.

10. The power module according to any one of claims 3 to 9, characterized in that: The power module further includes: a plurality of first conductive strips, the plurality of first conductive strips being sequentially arranged at intervals, and each of the first conductive strips being disposed on a side of the first power transistor facing the second conductive plate; A plurality of second conductive strips are sequentially arranged at intervals, and each second conductive strip is disposed on a side of the second power transistor facing the third conductive plate.

11. The power module according to claim 10, characterized in that: The second conductive plate has a plurality of first protrusions at one end thereof facing the first power transistor, wherein the first protrusions are electrically connected to at least one of the first conductive strips; The power module further includes: A plurality of first heat dissipation bars are located between the first conductive bar and the second conductive plate, and the plurality of first heat dissipation bars are alternately arranged between two adjacent first protrusions.

12. The power module according to claim 10 or 11, characterized in that: The third conductive plate has a plurality of second protrusions at one end facing the second power transistor, and the second protrusions are electrically connected to at least one of the second conductive strips; The power module further includes: A plurality of second heat dissipation bars are located between the second conductive bars and the third conductive plate, and the plurality of second heat dissipation bars are alternately arranged between two adjacent second protrusions.

13. The power module according to any one of claims 2 to 12, characterized in that: The power module further includes: a first heat dissipation layer, disposed between the first power transistor and the first conductive plate, the first conductive plate being electrically connected to the first electrode of the first power transistor through the first heat dissipation layer; The second heat dissipation layer is provided between the second power transistor and the second conductive plate. The second conductive plate is electrically connected to the first electrode of the second power transistor through the second heat dissipation layer.

14. The power module according to any one of claims 1 to 13, characterized in that: The power module further includes: A driving module is electrically connected to the control end of the first power transistor and the control end of the second power transistor, and the driving module is used to control the conduction or shutdown of the first power transistor and the second power transistor; the first terminal and the second terminal are both arranged on a side of the first power transistor and the second power transistor away from the driving module.

15. A power device, characterized in that: include: At least one power module according to any one of claims 1 to 14; A circuit board includes a first electrode plate and a second electrode plate stacked together, and the first terminal and the third terminal of the power module are both arranged between the first electrode plate and the second electrode plate.

Images