Vapor plating machine resetting method

Abstract

The invention discloses an evaporation machine reset method, and relates to the technical field of semiconductor preparation, and the method comprises the following steps: successively carrying out sand blasting, acid pickling, water washing and baking treatment on an adjusting baffle plate used for plating source switching in an evaporation machine; the baked adjusting baffle is subjected to re-coating, specifically, a first material and a second material are sequentially evaporated on the surface of the adjusting baffle in a vacuum environment, and a first sub-layer and a second sub-layer which are sequentially attached to the surface of the adjusting baffle are formed; and the adjusting baffle is cooled, and inert gas is introduced into the vacuum environment to break the vacuum state. According to the method, the functional layer comprising the first sub-layer and the second sub-layer is formed on the surface of the adjusting baffle, so that impact and attachment of a plating source in the evaporation process in the subsequent actual use process can be effectively blocked, the service life of the adjusting baffle is prolonged, and film material pollution caused by delamination can be effectively avoided.

Description

Technical Field

[0001] This invention relates to the field of semiconductor fabrication technology, and more specifically to a method for re-installing a vapor deposition machine. Background Technology

[0002] In high-end optical coating and semiconductor packaging, vacuum evaporation technology achieves micron-level functional coatings through precise control of film thickness. Its core equipment, the vacuum evaporation machine, relies on a source-switching baffle (Shutter) to perform crucial actions: blocking impure materials during the pre-melting stage and rapidly cutting off the coating source at the end of evaporation. The reliability of this component directly determines the purity and yield of the coating, requiring long-term stability under high temperature, vacuum, and the impact of coating vapor.

[0003] Currently, the industry commonly uses a single-layer coating structure on a stainless steel substrate for the Shutter. However, the maintenance method results in weak adhesion between the single-layer aluminum film and the substrate. Under thermal stress and impact from plating source particles, the coating is extremely prone to peeling, leading to the failure of the baffle. Furthermore, the peeled aluminum shavings mix into the plating material, causing defects such as pinholes and black spots in the film, thereby reducing the product yield. Summary of the Invention

[0004] In view of the shortcomings of the prior art, the purpose of this invention is to provide a method for re-running a vapor deposition machine, which aims to solve the above-mentioned problems described in the prior art.

[0005] To achieve the above objectives, the present invention adopts the following technical solution: A method for reactivating a vapor deposition machine, the method comprising: The adjusting baffle used for switching the plating source in the vapor deposition machine is subjected to sandblasting, pickling, water washing and baking in sequence; The baking baffle is subjected to a re-coating process, including the sequential deposition of a first material and a second material on the surface of the baffle in a vacuum environment to form a first sub-layer and a second sub-layer that are sequentially attached to the surface of the baffle. The regulating baffle is cooled, and an inert gas is introduced into the vacuum environment to break the vacuum.

[0006] According to one aspect of the above technical solution, the step of depositing a first material on the surface of the adjusting baffle to form a first sub-layer includes: The space where the adjusting baffle is located is evacuated to create a vacuum environment; Chromium material is vapor-plated onto the surface of the adjusting baffle, so that a first sub-layer is continuously formed on the surface of the adjusting baffle; The adjusting baffle is cooled so that the first sub-layer adheres to the surface of the adjusting baffle.

[0007] According to one aspect of the above technical solution, in the step of depositing chromium material on the surface of the adjusting baffle to continuously form a first sub-layer on the surface of the adjusting baffle, the evaporation rate of the chromium material is 0.1 Å / S-0.3 Å / S, and the evaporation thickness is 250 Å-350 Å.

[0008] According to one aspect of the above technical solution, the step of depositing a second material onto the surface of the first sub-layer on the adjusting baffle to form a second sub-layer includes: Aluminum material is vapor-deposited on the surface of the first sub-layer, so that a second sub-layer is continuously formed on the surface of the first sub-layer on the adjustment baffle.

[0009] According to one aspect of the above technical solution, in the step of depositing aluminum material on the surface of the first sub-layer to continuously form a second sub-layer on the surface of the first sub-layer on the adjusting baffle, the deposition rate of the aluminum material is 4 Å / S-6 Å / S, and the deposition thickness is 1000 Å-1500 Å.

[0010] According to one aspect of the above technical solution, the steps of cooling the regulating baffle and introducing inert gas into the vacuum environment to break the vacuum state include: After the second sub-layer is vapor-deposited, the adjusting baffle is cooled. Nitrogen gas is introduced into the vacuum environment to break the vacuum state, thus obtaining the adjustment baffle after restarting.

[0011] According to one aspect of the above technical solution, the step of acid washing the adjusting baffle includes: The surface of the regulating baffle is pickled using a mixture of dilute nitric acid and hydrofluoric acid; The pickling time is 5-10 minutes, and the pickling ambient temperature is ≤40℃.

[0012] According to one aspect of the above technical solution, the step of washing the adjusting baffle with water after acid washing includes: The regulating baffle is ultrasonically cleaned or high-pressure sprayed with deionized water. The ultrasonic cleaning process takes 10-15 minutes, while the spray cleaning process takes 3-5 minutes.

[0013] According to one aspect of the above technical solution, the step of baking the adjusting baffle after washing it with water includes: Set the baking temperature and baking time, and bake the adjusting baffle. The baking temperature is 100℃-200℃, and the baking time is 20min-60min.

[0014] Compared with the prior art, the advantages of using the vapor deposition machine re-running method shown in this invention are as follows: The method of this invention involves sequentially sandblasting, acid washing, water washing, and baking a regulating baffle used for switching plating sources in a vapor deposition machine. After baking, the regulating baffle undergoes a re-coating process, including sequentially vapor-depositing a first material and a second material onto the surface of the regulating baffle under vacuum conditions to form a first sub-layer and a second sub-layer sequentially attached to the surface of the regulating baffle. The regulating baffle is then cooled, and an inert gas is introduced into the vacuum environment to break the vacuum. By forming functional layers including the first and second sub-layers on the surface of the regulating baffle, this method effectively blocks the impact and adhesion of plating sources during subsequent vapor deposition, extending the service life of the regulating baffle and effectively preventing film contamination caused by delamination. Attached Figure Description

[0015] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which: Figure 1 This is a schematic flowchart of the evaporation machine re-running method in one embodiment of the present invention. Detailed Implementation

[0016] To make the objectives, features, and advantages of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. Several embodiments of the present invention are shown in the drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of the present invention will be more thorough and complete.

[0017] It should be noted that when a component is said to be "fixed to" another component, it can be directly on the other component or there may be an intervening component. When a component is said to be "connected to" another component, it can be directly connected to the other component or there may be an intervening component. The terms "vertical," "horizontal," "left," "right," and similar expressions used in this document are for illustrative purposes only.

[0018] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0019] Example 1 Please see Figure 1The first embodiment of the present invention provides a method for re-running a vapor deposition machine. The method shown in this embodiment includes steps S10-S30: Step S10: The adjusting baffle used for switching the plating source in the vapor deposition machine is subjected to sandblasting, acid washing, water washing and baking treatment in sequence.

[0020] In this embodiment, the adjusting baffle used for switching the plating source in the vapor deposition machine is sandblasted, i.e., roughened. This includes sandblasting the adjusting baffle with 220-400 mesh brown corundum, diamond abrasive, or other abrasive materials. The corresponding particle diameter is approximately 0.038-0.067 mm, and the sandblasting pressure is generally controlled at 0.3 MPa-0.5 MPa. By sandblasting the adjusting baffle, its surface is roughened to prevent impurities adhering to the surface of the adjusting baffle from reducing its surface adhesion.

[0021] Specifically, during actual sandblasting, the mesh size needs to be adjusted according to the material of the baffle. If the baffle material is relatively soft or only requires slight roughening, the pressure can be set to the lower limit. If the material is relatively hard or requires the removal of more impurities, the pressure can be appropriately increased, but generally not exceeding 0.7 MPa, so as not to damage the surface of the baffle.

[0022] In this embodiment, the step of acid washing the adjusting baffle includes: The surface of the regulating baffle is pickled using a mixture of dilute nitric acid and hydrofluoric acid; The pickling time is 5-10 minutes, and the pickling ambient temperature is ≤40℃.

[0023] In a preferred embodiment, a mixture of dilute nitric acid and hydrofluoric acid is used to acid-wash the regulating baffle. The mixture ratio is HNO3:H2O:HF = 5:5:1, and the concentration ratio can be adjusted according to the specific material of the regulating baffle. This is used to remove metal ions, oxides, and residual sandblasting particles from the surface of the regulating baffle. Specifically, HF is used to etch the surface of the regulating baffle to form micropores, while HNO3 is used to remove the oxide film on the surface of the regulating baffle, thereby synergistically improving the roughening effect.

[0024] In the specific pickling process, the pickling time depends on the degree of contamination of the regulating baffle, i.e., its cleanliness. If the pickling time is too long, it may lead to excessive etching of the surface of the regulating baffle. Therefore, it is only necessary to clean it with the pre-prepared mixture to remove metal ions, oxides and sandblasting residue particles, without the need for long-term soaking.

[0025] In this embodiment, the step of washing the regulating baffle with water after pickling includes: The regulating baffle is ultrasonically cleaned or high-pressure sprayed with deionized water. The ultrasonic cleaning process takes 10-15 minutes, while the spray cleaning process takes 3-5 minutes.

[0026] In a preferred embodiment, deionized water (DI water) is used to ultrasonically clean or high-pressure spray the regulating baffle. This physical action removes residual acid and fine particles from the micropores on the baffle surface after the pickling process, preventing the residual acid from generating bubbles during subsequent baking or drying, which could affect the final re-processing effect. For example, when using ultrasonic cleaning, the cleaning time is set to 10-15 minutes, divided into 2-3 cleaning tanks, with each tank cleaning for 5 minutes. When using high-pressure spray cleaning, the regulating baffle is continuously rinsed with deionized water for 3-5 minutes.

[0027] In this embodiment, the step of baking the adjusting baffle after washing it with water includes: Set the baking temperature and baking time, and bake the adjusting baffle. The baking temperature is 100℃-200℃, and the baking time is 20min-60min.

[0028] In a preferred embodiment, for example, baking at 150°C for 40 minutes completely dehydrates the surface of the adjusting baffle, preventing residual moisture from causing subsequent coating blistering.

[0029] Step S20 involves recoating the baked adjustment baffle with a first material and a second material in sequence under vacuum to form a first sub-layer and a second sub-layer that are sequentially attached to the surface of the adjustment baffle.

[0030] In this embodiment, the step of depositing a first material onto the surface of the adjusting baffle to form a first sublayer includes: The space where the adjusting baffle is located is evacuated to create a vacuum environment; Chromium material is vapor-plated onto the surface of the adjusting baffle, so that a first sub-layer is continuously formed on the surface of the adjusting baffle; The adjusting baffle is cooled so that the first sub-layer adheres to the surface of the adjusting baffle.

[0031] The evaporation rate of the chromium material is 0.1 Å / s-0.3 Å / s, and the evaporation thickness is 250 Å-350 Å.

[0032] In this embodiment, the regulating baffle is subjected to sandblasting, pickling, water washing and baking. That is, after the pretreatment of the regulating baffle is completed, the regulating baffle also needs to be recoated to improve the service life of the regulating baffle and make the surface of the regulating baffle less likely to peel off and contaminate the film material during the vapor deposition process.

[0033] Specifically, in this embodiment, chromium (Cr) material is vapor-deposited onto the surface of the regulating baffle to form a first sub-layer attached to the surface of the regulating baffle. The first sub-layer serves as a transition layer, used to form a strong metallurgical bond with the roughened substrate, i.e., the sandblasted regulating baffle. Specifically, during the chromium source vapor deposition process, the space where the regulating baffle is located is evacuated to form a high-vacuum environment, requiring a vacuum of 5.0E-6 Torr or higher. Then, chromium material with a thickness of 300 Å is vapor-deposited onto the surface of the regulating baffle at a deposition rate of 0.2 Å / s to form the first sub-layer. Finally, after chromium source vapor deposition, the surface is cooled for 2 minutes to allow the first sub-layer to adhere to the surface of the regulating baffle, resulting in a transition layer, which significantly reduces the risk of delamination of the regulating baffle during subsequent use.

[0034] In this embodiment, the step of depositing a second material on the surface of the first sub-layer of the adjusting baffle after evaporating chromium material to form a first sub-layer includes: Aluminum material is vapor-deposited on the surface of the first sub-layer, so that a second sub-layer is continuously formed on the surface of the first sub-layer on the adjustment baffle.

[0035] The evaporation rate of the aluminum material is 4 Å / s-6 Å / s, and the evaporation thickness is 1000 Å-1500 Å.

[0036] Specifically, after depositing chromium material onto the surface of the regulating baffle to obtain the first sub-layer, aluminum material with a thickness of 1250 Å is deposited on the surface of the regulating baffle at a deposition rate of 5 Å / s in the same vacuum environment to form a second sub-layer. This second sub-layer adheres to the surface of the first sub-layer, thus obtaining a functional layer with good wear resistance and non-stick properties attached to the surface of the regulating baffle. By forming this functional layer on the surface of the regulating baffle, water-containing corrosion substances or dirt that may be present on the regulating baffle of the vapor deposition machine can be continuously isolated at the bottom of the chromium and aluminum layers, preventing reaction with these contaminants during vapor deposition. Furthermore, the chromium and aluminum layers can effectively prevent impact and adhesion from the plating source, extending the service life of the regulating baffle and avoiding film contamination caused by delamination.

[0037] Step S30: Cool the adjusting baffle and introduce inert gas into the vacuum environment to break the vacuum state.

[0038] In this embodiment, the steps of cooling the regulating baffle and introducing inert gas into the vacuum environment to break the vacuum state include: After the second sub-layer is vapor-deposited, the adjusting baffle is cooled. Nitrogen gas is introduced into the vacuum environment to break the vacuum state, thus obtaining the adjustment baffle after restarting.

[0039] Specifically, after the second sublayer evaporation, the regulating baffle is cooled, including natural cooling and air cooling. After cooling for 5 minutes, nitrogen gas is gradually introduced into the vacuum environment to break the vacuum state, thereby obtaining the regulating baffle after the machine is restarted.

[0040] Compared with existing technologies, the advantages of using the above-mentioned method for reusing vapor deposition machines are as follows: The method described in this embodiment involves sequentially sandblasting, acid washing, water washing, and baking the regulating baffle used for switching plating sources in the vapor deposition machine. After baking, the regulating baffle undergoes a re-coating process, including sequentially vapor-depositing a first material and a second material onto the surface of the regulating baffle under vacuum conditions to form a first sub-layer and a second sub-layer sequentially attached to the surface of the regulating baffle. The regulating baffle is then cooled, and an inert gas is introduced into the vacuum environment to break the vacuum. This method, by forming functional layers including the first and second sub-layers on the surface of the regulating baffle, effectively blocks the impact and adhesion of plating sources during subsequent vapor deposition, extending the service life of the regulating baffle and effectively preventing film contamination caused by delamination.

[0041] In the description of this specification, references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0042] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these modifications and improvements all fall within the scope of protection of the present invention. Therefore, the scope of protection of this patent should be determined by the appended claims.

Claims

1. A method for re-running a vapor deposition machine, characterized in that, The method includes: The adjusting baffle used for switching the plating source in the vapor deposition machine is subjected to sandblasting, pickling, water washing and baking in sequence; The baking baffle is subjected to a re-coating process, including the sequential deposition of a first material and a second material on the surface of the baffle in a vacuum environment to form a first sub-layer and a second sub-layer that are sequentially attached to the surface of the baffle. The regulating baffle is cooled, and an inert gas is introduced into the vacuum environment to break the vacuum.

2. The method for reactivating a vapor deposition machine according to claim 1, characterized in that, The step of depositing a first material onto the surface of the adjusting baffle to form a first sublayer includes: The space where the adjusting baffle is located is evacuated to create a vacuum environment; Chromium material is vapor-plated onto the surface of the adjusting baffle, so that a first sub-layer is continuously formed on the surface of the adjusting baffle; The adjusting baffle is cooled so that the first sub-layer adheres to the surface of the adjusting baffle.

3. The method for reactivating a vapor deposition machine according to claim 2, characterized in that, In the step of depositing chromium material onto the surface of the adjusting baffle to continuously form a first sub-layer, the deposition rate of the chromium material is 0.1 Å / s-0.3 Å / s, and the deposition thickness is 250 Å-350 Å.

4. The method for reactivating a vapor deposition machine according to claim 1, characterized in that, The step of depositing a second material onto the surface of the first sub-layer on the adjusting baffle to form a second sub-layer includes: Aluminum material is vapor-deposited on the surface of the first sub-layer, so that a second sub-layer is continuously formed on the surface of the first sub-layer on the adjustment baffle.

5. The method for reactivating a vapor deposition machine according to claim 4, characterized in that, In the step of depositing aluminum material on the surface of the first sub-layer to continuously form a second sub-layer on the surface of the first sub-layer on the adjusting baffle, the deposition rate of the aluminum material is 4 Å / s-6 Å / s, and the deposition thickness is 1000 Å-1500 Å.

6. The method for reactivating a vapor deposition machine according to claim 1, characterized in that, The steps of cooling the regulating baffle and introducing inert gas into the vacuum environment to break the vacuum state include: After the second sub-layer is vapor-deposited, the adjusting baffle is cooled. Nitrogen gas is introduced into the vacuum environment to break the vacuum state, thus obtaining the adjustment baffle after restarting.

7. The method for reactivating a vapor deposition machine according to any one of claims 1-6, characterized in that, The step of pickling the adjusting baffle includes: The surface of the regulating baffle is pickled using a mixture of dilute nitric acid and hydrofluoric acid; The pickling time is 5-10 minutes, and the pickling ambient temperature is ≤40℃.

8. The method for reactivating a vapor deposition machine according to claim 7, characterized in that, The step of washing the regulating baffle with water after acid pickling includes: The regulating baffle is ultrasonically cleaned or high-pressure sprayed with deionized water. The ultrasonic cleaning process takes 10-15 minutes, while the spray cleaning process takes 3-5 minutes.

9. The method for reactivating a vapor deposition machine according to claim 8, characterized in that, The step of baking the adjusting baffle after washing it with water includes: Set the baking temperature and baking time, and bake the adjusting baffle. The baking temperature is 100℃-200℃, and the baking time is 20min-60min.

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