Method for forming titanium nitride thin film and method for forming electrode

Abstract

A method for forming a titanium nitride thin film according to an embodiment of the present invention comprises the steps of: preparing a substrate; spraying a titanium (Ti)-containing precursor toward the substrate to form a titanium (Ti)-containing layer; and spraying a nitrogen (N)-containing reaction gas toward the substrate to form the titanium nitride thin film, in which the titanium (Ti)-containing precursor does not contain chlorine (Cl). Accordingly, according to an embodiment of the present invention, a titanium nitride thin film from which impurities are removed can be formed. Accordingly, the resistivity of the titanium nitride thin film can be reduced, and the electrical characteristics thereof can be improved.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a method of forming a titanium nitride thin film and a method of forming an electrode, and more particularly, to a method of forming a titanium nitride thin film having improved electrical characteristics and a method of forming an electrode. BACKGROUND

[0002] A capacitor includes a lower electrode formed on a substrate, a dielectric layer formed on the lower electrode, and an upper electrode formed on the dielectric layer. Here, the upper electrode and the lower electrode are formed of a titanium nitride thin film.

[0003] In forming the titanium nitride thin film, a source precursor containing a large amount of chlorine (Cl) is used to form the titanium nitride thin film. However, when the titanium nitride thin film is formed, chlorine (Cl) originating from the source precursor causes a defect in which the resistivity of the electrode, that is, the resistivity of the titanium nitride thin film, increases. In addition, when the titanium nitride thin film is formed, chlorine (Cl) contained in the source precursor penetrates into a bottom layer of a contact layer made of, for example, a metal oxide. Thus, a defect in which the bottom layer, that is, the contact layer, is damaged and thus the electrical characteristics of the capacitor are deteriorated, is caused.

[0004] [Prior Art Document] (Patent Document 1): Korean Patent Registration No. 10-0942958 SUMMARY

[0005] PROBLEM TO BE SOLVED BY THE INVENTION The present disclosure provides a method of forming a titanium nitride thin film having improved electrical characteristics and a method of forming an electrode.

[0006] The present disclosure also provides a method of forming a titanium nitride thin film having a low resistivity and a method of forming an electrode.

[0007] TECHNICAL SOLUTION According to an exemplary embodiment, a method of forming a titanium nitride thin film includes the steps of: preparing a substrate; spraying a titanium (Ti)-containing precursor toward the substrate to form a titanium (Ti)-containing layer; and spraying a nitrogen (N)-containing reaction gas toward the substrate to form the titanium nitride thin film, wherein the titanium (Ti)-containing precursor does not contain chlorine (Cl).

[0008] A step of generating hydrogen (H2) plasma to remove impurities from the titanium (Ti)-containing layer can be included between the step of spraying the precursor and the step of spraying the reaction gas.

[0009] A process cycle can include the step of spraying the precursor, the step of generating hydrogen (H2) plasma, and the step of spraying the reaction gas, and the process cycle can be performed multiple times.

[0010] According to an exemplary embodiment, the method of forming a titanium nitride thin film further includes a step of generating a hydrogen (H2) plasma to remove impurities from the titanium nitride thin film after the step of spraying the reaction gas is completed.

[0011] The process cycle can further include the step of generating a hydrogen (H2) plasma after the step of spraying the reaction gas is completed, and the process cycle can be performed a plurality of times.

[0012] The step of generating a hydrogen (H2) plasma to remove impurities between the step of spraying the precursor and the step of spraying the reaction gas can remove oxygen (O) contained in the titanium (Ti) containing layer, and the step of generating a hydrogen (H2) plasma after the step of spraying the reaction gas is completed can remove oxygen (O) contained in the titanium nitride thin film.

[0013] The precursor can include tetrakis(dimethylamino) titanium (TDMAT: C8H 24 N4Ti).

[0014] According to an exemplary embodiment, the method of forming an electrode includes spraying a titanium (Ti) containing precursor toward a substrate to form a titanium (Ti) containing layer, and spraying a nitrogen (N) containing reaction gas toward the titanium (Ti) containing layer to form a titanium nitride thin film, wherein the titanium (Ti) containing precursor does not contain chlorine (Cl).

[0015] A first impurity removal step of generating a hydrogen (H2) plasma to remove oxygen (O) impurities from the titanium (Ti) containing layer can be included between the step of spraying the precursor and the step of spraying the reaction gas.

[0016] A nitrogen (N) plasma can be generated using the reaction gas in the step of spraying the nitrogen (N) containing reaction gas.

[0017] The process cycle can include the step of spraying the precursor, the step of first impurity removal, and the step of spraying the reaction gas, and the process cycle including the second impurity removal can be performed a plurality of times.

[0018] A second impurity removal step of generating a hydrogen (H2) plasma to remove oxygen (O) impurities from the titanium nitride thin film after the spraying of the reaction gas is completed can be further included, wherein the process cycle can further include the second impurity removal, and the process cycle including the second impurity removal can be performed a plurality of times.

[0019] Advantageous Effects According to embodiments of the disclosure, a titanium nitride thin film from which impurities are removed can be formed. Accordingly, the resistivity of the titanium nitride thin film can be reduced, and its electrical characteristics can be improved. BRIEF DESCRIPTION OF DRAWINGS

[0020] Figure 1is a view showing a titanium nitride (TiN) thin film formed on a substrate by a method according to an exemplary embodiment; Figure 2 is a conceptual diagram for describing a method of forming a titanium nitride thin film by a method according to an exemplary embodiment; Figure 3 is a process diagram conceptually showing a method of forming a titanium nitride thin film by a method according to an exemplary embodiment; Figure 4 is a conceptual diagram for describing a method of forming a titanium nitride thin film by a method according to another exemplary embodiment; Figure 5 is a process diagram conceptually showing a method of forming a titanium nitride thin film by a method according to an exemplary embodiment; and Figure 6 is a view conceptually showing a capacitor including an electrode formed of a titanium nitride thin film by a method according to an exemplary embodiment. DETAILED DESCRIPTION

[0021] Hereinafter, embodiments of the disclosure will be described in greater detail with reference to the accompanying drawings. However, the disclosure is not limited to the embodiments disclosed hereinafter, but can be implemented in various different forms. Instead, these embodiments are provided so that the disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art. The drawings can be exaggerated for the sake of description and the same reference numerals in the drawings indicate the same constituent elements.

[0022] Embodiments of the disclosure relate to a method of forming a titanium nitride (TiN) thin film having improved electrical characteristics. More particularly, embodiments of the disclosure relate to a method of forming a titanium nitride (TiN) thin film having a low resistivity. Furthermore, embodiments of the disclosure relate to a method of forming an electrode, in which a titanium nitride (TiN) thin film is used to form the electrode. Here, the electrode can be at least one of an upper electrode and a lower electrode in a capacitor. That is, at least one of an upper electrode and a lower electrode in a capacitor can be formed of a titanium nitride (TiN) thin film formed by a method according to embodiments of the disclosure.

[0023] Figure 1 is a view showing a titanium nitride (TiN) thin film formed on a substrate by a method according to a first embodiment.

[0024] Referring to Figure 1 , a titanium nitride (TiN) thin film 110 can be formed on a substrate S. Here, the substrate S can be a wafer, and the wafer can be any one of a Si wafer, a GaAs wafer, and a SiGe wafer. Furthermore, the substrate S can be made of any one of glass, metal, plastic, or a polymer film.

[0025] Further, the substrate S can have a predetermined thin film formed on one surface of the substrate S. For example, a contact layer of a capacitor can be formed on one surface of the substrate S, and a titanium nitride (TiN) thin film can be formed on an upper portion of the contact layer by the method according to the embodiment. In this case, the titanium nitride (TiN) thin film 110 formed on the upper portion of the contact layer can be used as a lower electrode of the capacitor.

[0026] For another example, a contact layer, a lower electrode, and a dielectric layer of a capacitor can be formed on one surface of the substrate S, and a titanium nitride (TiN) thin film 110 can be formed on an upper portion of the dielectric layer by the method according to the embodiment. In this case, the titanium nitride (TiN) thin film formed on the upper portion of the contact layer can be used as an upper electrode of the capacitor.

[0027] Hereinafter, a method of forming a titanium nitride (TiN) thin film on a substrate by a method according to a first embodiment of the disclosure will be described with reference to Figures 1 to 3 , a method of forming a titanium nitride (TiN) thin film on a substrate by a method according to a first embodiment of the disclosure will be described with reference to

[0028] Figure 2 is a conceptual diagram for describing a method of forming a titanium nitride thin film by the method according to the first embodiment. Figure 3 is a process diagram conceptually illustrating a method of forming a titanium nitride thin film by the method according to the first embodiment.

[0029] In Figure 2 , "on" can mean that a raw material for deposition is sprayed or plasma is generated, and "off" can mean that spraying or generation of plasma is stopped or completed or plasma is not generated.

[0030] Referring to Figure 2 , the method of forming the titanium nitride (TiN) thin film 110 can include a step of spraying a titanium (Ti)-containing precursor (a precursor spraying step), a step of generating plasma using hydrogen (H2)-containing gas after the precursor spraying step is completed (a hydrogen plasma generation step), and a step of spraying a nitrogen (N)-containing reaction gas after the hydrogen plasma generation step is completed (a reaction gas spraying step).

[0031] Further, the method of forming the titanium nitride thin film 110 can include at least one of a step of spraying a purge gas between the precursor spraying step and the hydrogen plasma generation step (a first purge step) and a step of spraying a purge gas after the reaction gas spraying step is completed (a second purge step). Here, Ar gas can be used as the purge gas.

[0032] Further, the "precursor injection step - first purge step - hydrogen plasma generation step - reaction gas injection step - second purge step" can be one process cycle CY for forming the titanium nitride film 110. In this case, at least one of the first purge step and the second purge step can be omitted in the process cycle CY. Then, the process cycle CY can be repeated a plurality of times to deposit or form a plurality of titanium nitride films 110, and in turn, a plurality of titanium nitride films 110 stacked as shown in FIG. 1 can be formed. In this case, the number of repetitions of the process cycle CY can be adjusted according to a target thickness to be formed. Figure 1

[0033] In Figure 1 , although each of the titanium nitride films 110 is separately shown to distinguish the films formed by the plurality of process cycles CY, the plurality of stacked titanium nitride films 110 can have a monolithic shape.

[0034] Hereinafter, each step in the process cycle CY will be described in more detail.

[0035] In the step of injecting the precursor, a titanium (Ti)-containing precursor is injected toward the substrate S. In other words, the titanium (Ti)-containing precursor is injected into the inside of the chamber in which the substrate S is loaded. Thus, as shown in (a) of FIG. 10, the titanium (Ti)-containing precursor is deposited or adsorbed on one surface of the substrate S to form a titanium (Ti)-containing film (hereinafter, referred to as a titanium layer 111). Figure 3

[0036] After the step of injecting the precursor is completed, a purge gas is injected into the chamber in which the substrate S is loaded, whereby the first purge is performed. In this case, for example, argon (Ar) gas can be used as the purge gas.

[0037] On the other hand, the titanium (Ti)-containing precursor can contain impurities such as chlorine (Cl) in addition to titanium (Ti). For example, a material such as TiCl4 used as the precursor in the related art contains chlorine (Cl). Thus, the titanium layer 111 formed by injecting the precursor on the substrate can contain chlorine (Cl). However, the chlorine (Cl) contained in the titanium layer 111 acts as an impurity that increases the resistivity of the titanium nitride film.

[0038] Thus, in the embodiment, a material containing titanium (Ti) but not containing chlorine (Cl) is used as the precursor. As a more specific example, in the embodiment, a material containing tetra(dimethylamino) titanium (TDMAT: C8H 24 N4Ti) or TDMAT is used as the precursor. TDMAT contains titanium (Ti) but can not contain chlorine (Cl). In the embodiment, by using such a chlorine (Cl)-free material as the precursor, it is possible to prevent the chlorine (Cl) from increasing the resistivity of the titanium nitride film. ​​

[0039] Further, a titanium (Ti) containing precursor such as TDMAT can not contain oxygen (O). However, oxygen in the air or atmosphere can be combined with the precursor. Therefore, the titanium containing layer 111 formed on the substrate can contain oxygen (O). Further, the oxygen (O) contained in the titanium containing layer 111 acts as an impurity that increases the resistivity of the titanium nitride film.

[0040] Therefore, in the embodiment, after the precursor is injected, a hydrogen (H2) containing gas is used to generate a hydrogen plasma, thereby removing the impurity. In other words, after the precursor is injected to form the titanium containing layer 111 on the substrate S, a hydrogen plasma is generated to remove oxygen (O) (that is, the impurity) from the titanium containing layer 111.

[0041] Hereinafter, the hydrogen plasma generation step will be described in more detail.

[0042] The hydrogen plasma generation step is a step of removing the impurity from the titanium containing layer 111, and can be performed after the injection of the precursor is completed. More specifically, in the case where the injection of the precursor step is completed, a plasma generation gas is injected toward the inside of the chamber or the substrate S, and power is supplied to generate a plasma. In this case, for example, radio frequency (RF) power is applied to at least one of the chamber, a susceptor to which the substrate S is attached inside the chamber, and an injection unit that injects the gas into the inside of the chamber. Further, a hydrogen (H2) containing gas is used as the plasma generation gas. As a more specific example, the plasma generation gas can be hydrogen gas (H2). As described above, in the case where the RF power is applied and the hydrogen (H2) containing gas is injected, a plasma containing hydrogen (that is, a hydrogen plasma) can be generated in the inside of the chamber. Therefore, as shown in (b) of FIG. 1, the substrate S on which the titanium containing layer 111 has been formed is exposed to the hydrogen plasma. Figure 3

[0043] The generated hydrogen plasma reacts with the titanium containing layer 111 formed on the substrate S to remove the impurity from the titanium containing layer 111. In other words, in the case where the titanium containing layer 111 (in which the titanium containing layer 111 contains an impurity such as oxygen (O)) is exposed to the hydrogen plasma, the impurity reacts with hydrogen (H2). In this case, the oxygen (O) contained in the titanium containing layer 111 reacts with hydrogen (H2) and turns into a gas, whereby the oxygen (O) exits from the titanium containing layer 111. More specifically, the oxygen (O) contained in the titanium containing layer 111 reacts with the hydrogen plasma, whereby the oxygen (O) turns into H2O gas and then exits from the titanium containing layer 111. Therefore, the content of the oxygen (O) contained in the titanium containing layer 111 can be reduced, which can reduce the resistivity of each of the titanium nitride film formed after the injection of the reaction gas is completed and the titanium containing layer 111.

[0044] ​The step of spouting the reaction gas is performed after the hydrogen plasma generation step is completed, and the reaction gas is spouted toward the substrate S. In other words, the reaction gas is spouted into the inside of the chamber in which the substrate S is loaded. Here, a nitrogen (N)-containing gas is used as the reaction gas, and specifically, an ammonia (NH3)-containing gas or ammonia (NH3) can be used. In the case where the nitrogen (N)-containing reaction gas is spouted, the titanium-containing layer 111 is exposed to the reaction gas. Therefore, as shown in (c) of FIG. 10, the nitrogen (N) contained in the reaction gas reacts with the titanium-containing layer 111 to form the titanium nitride film 110. Figure 3

[0045] In the step of spouting the reaction gas, a plasma can be generated using the reaction gas. In other words, a nitrogen (N)-containing plasma (that is, a nitrogen plasma) can be generated using the reaction gas.

[0046] After the step of spouting the reaction gas is completed, a purge gas is spouted into the chamber in which the substrate S is loaded, whereby a secondary purge is performed. In this case, the same gas as in the first purge step can be used as the purge gas, and for example, argon (Ar) can be used.

[0047] The process cycle CY including the precursor spouting step, the first purge step, the hydrogen plasma generation step, the reaction gas spouting step, and the secondary purge step as described above can be performed once or repeatedly.

[0048] The titanium nitride film 110 formed on the substrate S in this way has a low resistivity. In other words, the titanium nitride film 110 formed by the method according to the embodiment has a lower resistivity than a titanium nitride film formed by a method in the related art. This is because, when the titanium-containing layer 111 is formed by spouting the precursor, a titanium (Ti)-containing precursor that does not contain chlorine (Cl) is used. Therefore, it is possible to prevent the resistivity from increasing due to chlorine (Cl), which makes it possible to form a titanium nitride film having a lower resistivity than a titanium nitride film in the related art. Furthermore, this is also because, after the precursor is spouted toward the substrate S to form the titanium-containing layer 111, a hydrogen plasma is generated to remove oxygen (O) from the titanium-containing layer 111. Therefore, it is possible to reduce the oxygen (O) content contained in the titanium-containing layer 111 than a titanium nitride film in the related art, which makes it possible to form a titanium nitride film 110 having a lower resistivity than a titanium nitride film in the related art.

[0049] Figure 4 is a conceptual diagram for describing a method of forming a titanium nitride film using a method according to a second embodiment. Figure 5 is a process diagram conceptually showing a method of forming a titanium nitride film by a method according to a first embodiment.

[0050] In Figure 4 ​In the present specification, "on" can mean that a raw material for deposition is sprayed or plasma is generated, and "off" can mean that spraying or generation of plasma is stopped or completed or plasma is not generated.

[0051] In the first embodiment described in Figure 2 and Figure 3 , a case in which one hydrogen plasma generation step is performed between the precursor spraying step and the reaction gas spraying step has been described. However, the step of generating hydrogen plasma is not limited thereto, and the step of generating hydrogen plasma can be performed multiple times, and the step of generating hydrogen plasma can be performed after the step of spraying the reaction gas is performed, as shown in Figure 4 and Figure 5 .

[0052] Hereinafter, a method of forming a titanium nitride thin film according to a second embodiment of the present disclosure will be described with reference to Figure 4 and Figure 5 . In this case, explanatory descriptions identical to the explanatory descriptions of the first embodiment will be omitted or briefly described.

[0053] With reference to Figure 4 and Figure 5 , the method of forming a titanium nitride thin film 110 according to the second embodiment can include a step of spraying a titanium (Ti)-containing precursor (a precursor spraying step), a step of generating plasma using hydrogen (H2)-containing gas after the precursor spraying step is completed (a first hydrogen plasma generation step), a step of spraying a nitrogen (N)-containing reaction gas after the first hydrogen plasma generation step is completed (a reaction gas spraying step), and a step of generating plasma using hydrogen (H2)-containing gas after the reaction gas spraying step is completed (a second hydrogen plasma generation step).

[0054] Further, the method of forming a titanium nitride thin film 110 can include a step of spraying a purge gas between the precursor spraying step and the first hydrogen plasma generation step (a first purge step) and a step of spraying a purge gas after the second hydrogen plasma generation step is completed (a second purge step). In this case, Ar gas can be used as the purge gas.

[0055] As described above, the method of forming the titanium nitride film 110 according to the second embodiment can include the precursor injection step, the first purge step, the first hydrogen plasma generation step, the reaction gas injection step, the second hydrogen plasma generation step, and the second purge step. Further, the "precursor injection step - first purge step - first hydrogen plasma generation step - reaction gas injection step - second hydrogen plasma generation step - second purge step" can be one process cycle CY of forming the titanium nitride film 110. In this case, at least one of the first purge step and the second purge step can be omitted in the process cycle CY.

[0056] In the method according to the second embodiment, the precursor injection step, the first purge step, the first hydrogen plasma generation step, the reaction gas injection step, and the second purge step are performed in the same manner as in the first embodiment. Therefore, explanatory description of these steps is omitted.

[0057] The second hydrogen plasma generation step is a step for removing impurities from the titanium nitride film 110, and it can be performed after the injection of the reaction gas is completed. In other words, the second hydrogen plasma generation step removes oxygen (O) (that is, impurities) that was not removed from the first hydrogen plasma generation step. More specifically, in the first hydrogen plasma generation step, the oxygen (O) impurities are removed from the titanium-containing layer 111. On the other hand, in the first hydrogen plasma generation step, impurities such as oxygen (O) contained in the titanium-containing layer 111 can not be completely removed, and a part thereof can remain. Therefore, when the reaction gas is injected to form the titanium nitride film 110, the titanium nitride film 110 can contain impurities such as oxygen (O). Therefore, in the second embodiment, when the reaction gas is injected to form the titanium nitride film 110, hydrogen plasma is generated (the second hydrogen plasma generation step is performed) to remove impurities from the titanium nitride film 110.

[0058] The second hydrogen plasma can be generated in the same manner as in the first hydrogen plasma generation step described above. In other words, radio frequency (RF) power is applied to at least one of the chamber, the susceptor to which the substrate S is attached inside the chamber, and the injection unit that injects a gas into the inside of the chamber. Then, a hydrogen-containing gas (that is, hydrogen gas (H2)) is injected into the inside of the chamber. Therefore, hydrogen plasma can be generated in the inside of the chamber. Therefore, as shown in (d) of FIG. 10, the substrate S on which the titanium nitride film 110 has been formed is exposed to the hydrogen plasma. Figure 3

[0059] ​The generated hydrogen plasma reacts with the titanium nitride film 110 to remove impurities from the titanium nitride film 110. That is, impurities react with hydrogen (H2) in a case where the titanium nitride film 110 is exposed to the hydrogen plasma. In this case, oxygen (O) contained in the titanium nitride film 110 reacts with hydrogen (H2) and turns into a gas, whereby the oxygen (O) is removed from the titanium nitride film 110. Thus, the content of the oxygen (O) contained in the titanium nitride film 110 is reduced, which can reduce the resistivity of the titanium nitride film 110.

[0060] After the second hydrogen plasma generation step is completed, a purge gas is injected into the chamber in which the substrate S is loaded, whereby a second purge is performed. In this case, the same gas as that in the first purge step can be used as the purge gas, and, for example, argon (Ar) can be used.

[0061] Further, the process cycle CY including the precursor injection step, the first purge step, the first hydrogen plasma generation step, the reaction gas injection step, the second hydrogen plasma generation step, and the second purge step as described above can be performed once or repeatedly.

[0062] In the above description, a case where the hydrogen plasma is generated between the precursor injection step and the reaction gas injection step (the first hydrogen plasma generation step is performed) and the hydrogen plasma is generated after the reaction gas is injected (the second hydrogen plasma generation step is performed) has been described. However, the present disclosure is not limited to this, and only one of the first hydrogen plasma generation step and the second hydrogen plasma generation step can be performed. That is, the hydrogen plasma can be generated between the precursor injection step and the reaction gas injection step, and the hydrogen plasma can not be generated after the injection of the reaction gas is completed. Further, the hydrogen plasma can not be generated between the precursor injection step and the reaction gas injection step, and the hydrogen plasma can be generated after the injection of the reaction gas is completed.

[0063] Figure 6 is a view conceptually showing a capacitor including an electrode formed from a titanium nitride film by a method according to an embodiment of the present disclosure.

[0064] Referring to Figure 6 , the capacitor 200 can include a lower electrode 220 formed on a substrate S, a dielectric layer 230 formed on the lower electrode 220, and an upper electrode 240 formed on the dielectric layer 230. Further, the capacitor 200 can include a contact layer 210 formed on a lower side of the lower electrode 220.

[0065] The substrate S can be a semiconductor substrate. As a more specific example, the substrate S can be a wafer, and it can be any one of a Si wafer, a GaAs wafer, and a SiGe wafer.

[0066] The contact layer 210 is a layer formed between the substrate S and the lower electrode 220, which can be formed of a metal oxide such as a SiO2 film or an Al2O3 film.

[0067] The dielectric layer 230 is formed between the lower electrode 220 and the upper electrode 240, and can be formed of a metal oxide-containing dielectric material. As a more specific example, the dielectric layer 230 can be formed of any one of ZrO2, Al2O3, TiO2, TaO2, and HfO2. Further, such a dielectric layer 230 can be formed by an atomic layer deposition (ALD) method or a chemical vapor deposition (CVD) method.

[0068] At least one of the lower electrode 220 and the upper electrode 240 can be a titanium nitride film formed by a method according to an embodiment of the disclosure. For example, the titanium nitride film 110 can be formed by the method according to the first embodiment and the method according to the second embodiment described above, and then at least one of the lower electrode 220 and the upper electrode 240 can be formed.

[0069] In the above description, a case where a titanium nitride film is formed by a method according to an embodiment to form at least one of the lower electrode 220 and the upper electrode 240 in the capacitor 200 has been described. However, the titanium nitride film 110 formed by the method according to an embodiment is not limited to the electrodes of the capacitor 200, but can be applied to various semiconductor devices or electronic devices equipped with electrodes.

[0070] Industrial applicability According to an embodiment of the disclosure, a titanium nitride film from which impurities are removed can be formed. Therefore, the resistivity of the titanium nitride film can be reduced, and its electrical characteristics can be improved.

Claims

1. A method for forming a titanium nitride thin film, comprising the following steps: Prepare the substrate; A titanium (Ti)-containing precursor is sprayed toward the substrate to form a titanium (Ti)-containing layer; and A nitrogen-containing (N) reactive gas is sprayed toward the substrate to form a titanium nitride film. in, The titanium (Ti)-containing precursor does not contain chlorine (Cl).

2. The method for forming a titanium nitride thin film as described in claim 1, further comprising: Between the step of spraying the precursor and the step of spraying the reactive gas, a step is taken to generate hydrogen (H2) plasma to remove impurities from the titanium (Ti) layer.

3. The method for forming a titanium nitride thin film as described in claim 2, wherein, The process cycle includes the steps of injecting the precursor, generating hydrogen (H2) plasma, and injecting the reactant gas. The process is repeated multiple times.

4. The method for forming a titanium nitride thin film as described in claim 3, further comprising: After the step of spraying the reactive gas is completed, a step of generating hydrogen (H2) plasma to remove impurities from the titanium nitride film is performed.

5. The method for forming a titanium nitride thin film as described in claim 4, wherein, The process cycle also includes, after the step of injecting the reactive gas is completed, a step of generating hydrogen (H2) plasma, and The process is repeated multiple times.

6. The method for forming a titanium nitride thin film as described in claim 3, wherein, Between the steps of spraying the precursor and spraying the reactant gas, a step of generating hydrogen (H2) plasma to remove impurities removes oxygen (O) from the titanium (Ti) layer, and After the step of spraying the reactive gas is completed, a step of generating hydrogen (H2) plasma is performed to remove the oxygen (O) contained in the titanium nitride film.

7. The method for forming a titanium nitride thin film as described in claim 1 or 6, wherein, The precursor comprises tetrakis(dimethylamino)titanium (TDMAT:C8H) 24 N4Ti).

8. A method for forming an electrode, comprising: A titanium (Ti)-containing precursor is sprayed toward the substrate to form a titanium (Ti)-containing layer; as well as A nitrogen-containing (N) reactive gas is injected toward the titanium (Ti) layer to form a titanium nitride film. The titanium (Ti)-containing precursor does not contain chlorine (Cl).

9. The method for forming an electrode as described in claim 8, further comprising: Between the step of spraying the precursor and the step of spraying the reactive gas, a first impurity removal step is performed to generate hydrogen (H2) plasma to remove oxygen (O) impurities from the titanium (Ti) layer.

10. The method of forming an electrode as described in claim 8, wherein, The reactive gas is used to generate nitrogen (N) plasma in the step of injecting the nitrogen (N)-containing reactive gas.

11. The method of forming an electrode as claimed in claim 10, wherein, The process cycle includes the steps of injecting the precursor, initial impurity removal, and injecting the reactant gas. The process is repeated multiple times.

12. The method of forming an electrode as claimed in claim 11, further comprising: After the step of injecting the reactive gas is completed, a secondary impurity removal step is performed to generate hydrogen (H2) plasma to remove oxygen (O) impurities from the titanium nitride film. The process cycle further includes the secondary impurity removal step, and The process, including the secondary impurity removal step, is performed multiple times.

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