Substrate processing method, substrate processing apparatus, substrate processing system, and program product

Abstract

The present invention provides a substrate processing method, a substrate processing apparatus, a substrate processing system, and a program product that effectively suppress variations in a pattern formed by lithography. The substrate processing method comprises the following steps: forming a photosensitive film on the surface of a substrate; a step in which the substrate on which the film formation process has been completed is housed in a first chamber, and the photosensitive film is exposed in the first chamber; a step of accommodating the substrate on which the film formation process has been completed in a second chamber different from the first chamber, and performing a decompression process of decompressing the inside of the second chamber; a step of performing a hydration process in which the photosensitive film is exposed to a moisture-containing gas after the decompression process and before the developing process; and a step of developing the photosensitive film of the substrate after the exposure treatment and the hydration treatment.

Description

Technical Field

[0001] This invention relates to substrate processing methods, substrate processing apparatus, substrate processing systems, and program products. Background Technology

[0002] Japanese Patent Document JP2024-7375A discloses a substrate transport method in which wafers are sequentially transported to an exposure machine, a heating module, and a developing module, such that the time from when the wafer is sent out of the exposure machine until it is transported to the heating module is approximately constant. Summary of the Invention

[0003] The problem the invention aims to solve

[0004] This invention provides a system for effectively suppressing deviations in patterns formed by photolithography.

[0005] Technical means for solving problems

[0006] One aspect of the substrate processing method of the present invention includes: a step of forming a film by performing a photosensitive coating on the surface of a substrate; a step of placing the film-formed substrate in a first chamber and exposing the photosensitive coating in the first chamber; a step of placing the film-formed substrate in a second chamber different from the first chamber and performing a decompression treatment to reduce the pressure in the second chamber; a step of performing a hydration treatment after the decompression treatment to expose the photosensitive coating to a moisture-containing gas; and a step of developing the photosensitive coating on the exposed and hydrated substrate.

[0007] Invention Effects

[0008] According to the present invention, a system can be provided that can effectively suppress deviations in patterns formed by photolithography. Attached Figure Description

[0009] Figure 1 It is a top view that schematically illustrates the structure of a chip processing system.

[0010] Figure 2 yes Figure 1 The front view of the chip processing system.

[0011] Figure 3 This is a schematic diagram illustrating a wafer processing system including an exposure apparatus.

[0012] Figure 4 This is a schematic diagram illustrating a decompression and hydration system.

[0013] Figure 5 This is a schematic diagram illustrating a variation of the decompression and hydration system.

[0014] Figure 6 This is an example Figure 5 A diagram illustrating the operation of the pressure relief device.

[0015] Figure 7 This is a block diagram illustrating the functional structure of a control device.

[0016] Figure 8 This is a schematic diagram illustrating the state of the photosensitive coating near the exposed area.

[0017] Figure 9 This is a schematic diagram illustrating the state changes of the photosensitive coating up to the wet development process.

[0018] Figure 10 This is a schematic diagram illustrating the state changes of the photosensitive coating up to the dry development process.

[0019] Figure 11 This is a block diagram illustrating the hardware structure of the control device.

[0020] Figure 12 This is a diagram illustrating a variation of a wafer processing system.

[0021] Figure 13 This is a diagram illustrating another variation of a chip processing system.

[0022] Figure 14 This is a diagram illustrating another variation of a chip processing system.

[0023] Figure 15 This is a diagram illustrating another variation of a chip processing system.

[0024] Figure 16 This is a flowchart illustrating the substrate processing flow.

[0025] Figure 17 This is a flowchart illustrating the substrate processing flow.

[0026] Figure 18 It is a graph representing confirmed results.

[0027] Figure 19 It is a graph representing confirmed results.

[0028] Figure 20 It is a graph representing confirmed results.

[0029] Figure 21 It is a graph representing confirmed results.

[0030] Figure 22 It is a graph representing confirmed results.

[0031] Figure 23 It is a graph representing confirmed results.

[0032] Figure 24 This is a block diagram representing a modified example of a chip processing system.

[0033] Figure 25 This is a flowchart representing a variation of the substrate processing flow.

[0034] Figure 26 This is a graph showing the confirmed effect of the modified example. Detailed Implementation

[0035] Hereinafter, the embodiments will be described in detail with reference to the accompanying drawings. In the description, the same symbols are used to mark the same elements or elements having the same function, and repeated descriptions are omitted.

[0036] Hereinafter, the wafer processing system of the substrate processing apparatus of this embodiment will be described with reference to the accompanying drawings. Furthermore, in this specification, elements having substantially the same functional structure are labeled with the same reference numerals, and repeated descriptions are omitted.

[0037] [Chip Processing System]

[0038] First, the structure of the wafer processing system of this embodiment will be described. Figure 1 , Figure 2 These are schematic top views and front views illustrating the general structure of the wafer processing system 1. In this embodiment, the wafer processing system 1 is described as a photolithography system that performs resist film formation and development processes on a wafer W.

[0039] like Figure 1 As shown, the wafer processing system 1 includes: a cassette station 2 for feeding and discharging a cassette C containing multiple wafers W; and a processing station 3 including multiple various processing devices for performing prescribed processing on the wafers W. Furthermore, the wafer processing system 1 has a structure that integrates the cassette station 2, the processing station 3, and an interface station 4 for transferring wafers W between the cassette station 2, the processing station 3, and an exposure device (not shown) adjacent to the processing station 3 on the opposite side. Additionally, as... Figure 1 As shown, processing station 3 has two units between box station 2 and interface station 4, but it can also have one or more units.

[0040] The cassette station 2 is equipped with multiple cassette placement stages 21 and wafer transport devices 22 and 23. The cassette station 2 uses the wafer transport devices 22 or 23 to transport wafers W between the cassettes C placed on the placement stages 21 and the processing station 3. Therefore, the wafer transport devices 22 and 23 may include drive mechanisms in the X direction, Y direction, vertical direction, and about the vertical axis (θ direction), or may include drive mechanisms in all directions, as needed.

[0041] At least one of the wafer transport devices 22 and 23 is capable of transferring wafer W to cartridge C, and also capable of transferring wafer W to processing station 3. Furthermore, the transfer of wafer W to processing station 3 may refer, for example, to the transfer of wafer W to a third block G3 that includes transfer devices accessible by the wafer transport device 33 within processing station 3 (described later). The third block G3 may also include multiple transfer devices (not shown) arranged vertically.

[0042] In addition, the box station 2 may also be equipped with an inspection device (not shown) for inspecting the wafer W at a location accessible by either of the wafer transport devices 22 and 23.

[0043] Processing station 3 has multiple blocks, such as blocks G1, G2, and G4 (the first, second, and fourth blocks respectively). Additionally, as... Figure 2 As shown, multiple layers 31, including first and second blocks G1 and G2, are stacked vertically. For example, on the front side of processing station 3 ( Figure 1 The first block G1 is set on the negative X-direction side of the processing station 3. Figure 1 A second block G2 is located on the positive X-direction side of processing station 3. On the interface station 4 side of processing station 3 ( Figure 1 A fourth block G4 is provided on the positive Y-direction side or at the connection point with another adjacent processing station 3. The fourth block G4 may also include multiple connection devices arranged vertically. In addition, the aforementioned third block G3 may also be provided within the processing station 3.

[0044] The first block G1 is equipped with multiple processing devices, such as a pattern forming film forming device and a developing device (not shown). The pattern forming film forming device may include, for example, an anti-reflective film forming device in addition to a resist film forming device. For example, the multiple processing devices are arranged horizontally. Furthermore, the number, arrangement, and type of these processing devices can be arbitrarily selected.

[0045] In these pattern forming film forming apparatuses and developing apparatuses, for example, a prescribed processing liquid or a prescribed gas is supplied to the wafer W. Thus, in the pattern forming film forming apparatus, a resist film used as a mask for forming a pattern on the lower layer side of the film is formed, as well as an anti-reflective film for efficiently performing light irradiation processing, such as exposure processing. On the other hand, in the developing apparatus, a portion of the exposed resist film is removed to form the uneven shape of the aforementioned mask.

[0046] For example, in the second block G2, heat treatment apparatus (not shown) for heating and cooling wafer W is arranged in both the vertical and horizontal directions. Additionally, in the second block G2, to improve the adhesion of the photoresist to the wafer W, in the vertical direction (… Figure 2 The heat treatment apparatus, hydrophobic treatment apparatus, and peripheral exposure apparatus (not shown) for exposing the outer periphery of the wafer W are arranged in the Z direction and horizontal direction. The number and configuration of these heat treatment apparatus, hydrophobic treatment apparatus, and peripheral exposure apparatus can be arbitrarily selected.

[0047] like Figure 1 As shown, a wafer transport region 32 is formed in the area sandwiched between the first block G1 and the second block G2 when viewed from above. A wafer transport device 33, for example, is disposed in the wafer transport region 32.

[0048] The wafer transport device 33 has a transport arm that is movable, for example, in the X, Y, θ, and vertical directions. The wafer transport device 33 is capable of moving within the wafer transport area 32, transporting the wafer W to designated locations within the surrounding first block G1, second block G2, third block G3, and fourth block G4. Figure 1 In the case of multiple processing stations 3, the wafer transport device 33 installed at the processing station 3 located on the side of the interface station 4 can transport the wafer W to a specified device in the fifth block G5, which will be described later, in addition to the first, second, and fourth blocks G1, G2, and G4.

[0049] Multiple wafer transport devices 33 are arranged vertically, for example. One wafer transport device 33 can transport wafer W to multiple layers 31 stacked vertically (see reference). Figure 2 The device is positioned at the height of multiple layers 31 located on the upper side of the structure. For the device positioned at the height of multiple layers 31 located below these layers 31, an additional wafer transport device 33 can transport the wafer W. Multiple wafer transport areas 32 are provided in such a way that the wafer W can be transported. Furthermore, wafer transport devices 33 are provided for each layer 31, and the number of wafer transport devices 33 and the number of layers 31 corresponding to each wafer transport device 33 can be arbitrarily selected.

[0050] Alternatively, a reciprocating transport device (not shown) may be provided in the wafer transport area 32 or the first module block G1 and the second module block G2. The reciprocating transport device transports the wafer W linearly between the space adjacent to one side of the processing station 3 and other spaces adjacent to the opposite side.

[0051] Interface station 4 is equipped with a fifth block G5 including multiple transfer devices, and wafer transport devices 41 and 42. Between the fifth block G5, where wafer W is transferred by wafer transport device 33, and the exposure device, interface station 4 uses wafer transport device 41 or 42 to transport wafer W. Therefore, wafer transport devices 41 and 42 may have drive mechanisms in the X direction, Y direction, vertical direction, and about the vertical axis (θ direction), or may have drive mechanisms in all directions, as needed. At least one of wafer transport devices 41 and 42 can support wafer W and transport it between the transfer devices and the exposure device within the fifth block G5.

[0052] The cleaning device for cleaning the surface of the wafer W and the aforementioned peripheral exposure device can also be installed in either of the accessible locations in the wafer transport devices 41 and 42 within the interface station 4.

[0053] As described above, the inspection device can be installed at box station 2, but it can also be installed in any conveyor arm located inside processing station 3 and interface station 4. Figure 1 or Figure 2 The positions that can be approached are 33, 41, and 42 in the text.

[0054] A control device 100 is provided in the wafer processing system 1 described above. The control device 100 is, for example, a computer, and has a program storage unit (not shown). The program storage unit stores a program for controlling the processing of the wafer W in the wafer processing system 1. In addition, the program storage unit also stores a program for controlling the operation of the drive systems of the various processing devices, transport devices, etc., described above to realize the wafer processing in the wafer processing system 1. Furthermore, the above-mentioned programs may also be recorded on a computer-readable storage medium and installed from that storage medium onto the control device 100.

[0055] As an example, processing station 3 has a film-forming processing device 34 and a developing processing device 35 (see reference). Figure 7The film forming apparatus 34 is an example of the pattern forming film forming apparatus described above, forming a photosensitive coating on the surface of a substrate (e.g., the wafer W described above). The photosensitive coating may also be a metal resist film. The metal resist film may be, for example, a negative or positive resist film containing a resist material containing a metal compound. Containing a metal compound means that it is contained not as an impurity but as at least a part of the main constituent. In the case of a negative metal resist film, the areas where metal atom aggregates are formed by exposure can be formed into a resist pattern without being removed by a development process. For example, the metal compound constituting the negative resist film may have metal atoms, ligands bonded to the metal atoms, and hydroxyl groups. In this case, mainly by exposure, the bonds between the metal atoms and the ligands are broken, thereby the ligands are detached. The formation of bonds caused by the reaction of the metal atoms after ligand detachment with hydroxyl groups bonded to other metal atoms, and the condensation reaction of the hydroxyl groups with each other, can form aggregates of multiple metal atoms bonded via oxygen atoms. In the case of a positive metal resist film, the metal compound is hydrophilized by exposure. The areas containing the hydrophilized metal compound can be removed by developing with an alkaline fluid.

[0056] The metal atoms constituting the resist material can be, for example, tin, tungsten, hafnium, zirconium, indium, tellurium, antimony, nickel, cobalt, titanium, tantalum, molybdenum, bismuth, iodine, germanium, or combinations thereof. The ligand can be an organic group (e.g., alkyl). The organic group serving as the ligand can be replaced by a halogen atom (e.g., fluorine, bromine, or iodine). Examples of alkyl groups include ethyl, isopropyl, n-propyl, tert-butyl, isobutyl, n-butyl, sec-butyl, n-pentyl, isopentyl, tert-pentyl, and sec-pentyl.

[0057] The photoresist film can be either negative or positive. A negative photoresist film is removed by exposure but not by development. After development, the exposed portions remain as a photoresist pattern on the surface of the wafer W, while the unexposed portions are removed from the surface of the wafer W. A positive photoresist film is removed by exposure and then by development. After development, the exposed portions are removed from the surface of the wafer W, while the unexposed portions remain as a photoresist pattern on the surface of the wafer W.

[0058] The film deposition apparatus 34 can be either wet or dry. A wet film deposition apparatus 34, for example, applies a film deposition solution to the surface of the wafer W and then dries it, thereby forming a photosensitive coating on the surface of the wafer W. A dry film deposition apparatus 34 does not use a film deposition solution or other processing liquid, but forms a photosensitive coating on the surface of the wafer W through processing with film deposition gases such as CVD (Chemical Vapor Deposition).

[0059] The developing apparatus 35 performs developing treatment on the photosensitive coating. As described above, developing treatment is the process of removing portions of the photosensitive coating that can be removed after exposure. The developing apparatus 35 can be either wet or dry. A wet developing apparatus 35 performs developing treatment by supplying developing solution to the photosensitive coating. Portions of the photosensitive coating that can be removed after exposure dissolve in the developing solution and are removed. A dry developing apparatus 35 performs developing treatment by supplying developing gas to the photosensitive coating. Portions of the photosensitive coating that can be removed after exposure are removed through a chemical reaction with the developing gas. The dry developing apparatus 35 can also be configured to perform developing treatment in an environment of reduced pressure to vacuum or near that.

[0060] Processing station 3 may also have heat treatment apparatus 36 and heat treatment apparatus 37 (see reference). Figure 7 The heat treatment apparatus 36 performs a heat treatment (e.g., PAB (Post Apply Bake)) to cure the photosensitive coating formed by the film forming apparatus 34. The heat treatment apparatus 37 performs a heat treatment (e.g., PEB (Post Exposure Bake)) on the photosensitive coating after exposure treatment.

[0061] like Figure 3 As shown, the wafer processing system 1 may further include an exposure apparatus 5 connected to the interface station 4. The exposure apparatus 5 has a chamber 51 for housing the wafer W, and performs exposure processing on the wafer W housed in the chamber 51. Examples of exposure processing include exposure processing based on EUV (Extreme Ultra Violet) light, exposure processing based on ArF (Argon Fluoride) light, and exposure processing based on KrF (Krypton Fluoride) light.

[0062] During substrate processing by the wafer processing system 1, pattern deviations (e.g., deviations in pattern linewidth) may occur between wafers W. Furthermore, pattern deviations can occur even within a single substrate. The main causes of pattern deviations include differences in the time from when the wafer W is transported from the exposure unit 5 to the development unit 35, or differences in the time from when the wafer W is transported from the exposure unit 5 to the heat treatment unit 37. Regarding pattern deviations caused by these reasons, the inventors have discovered that a detachable substance remains within the photosensitive coating, which affects the pattern after development. Hereinafter, this substance remaining in the coating will be referred to as "residual substance." For example, the amount of residual substance varies due to differences in the time from the exposure unit to when it is transported to the heating module, and this difference may cause pattern deviations. Alternatively, the delayed reaction progress due to residual substance may cause differences due to the aforementioned time differences, and this difference may also cause pattern deviations.

[0063] To this end, the wafer processing system 1 is configured to perform the following processes: a film-forming process for forming a photosensitive coating on the surface of a wafer W; placing the wafer W after the film-forming process into a first chamber (e.g., chamber 51) and exposing the photosensitive coating in the first chamber; placing the wafer W after the film-forming process into a second chamber different from the first chamber and performing a decompression process for depressurizing the second chamber; performing a hydration process after the decompression process and before the development process, exposing the photosensitive coating to a moisture-containing gas; and performing a development process for the photosensitive coating of the wafer W after the exposure process and the hydration process.

[0064] According to the wafer processing system 1 configured as described above, the wafer W after film deposition is placed in a second chamber, different from the first chamber used for exposure, and subjected to decompression treatment to reduce the pressure in the second chamber, followed by hydration treatment. Afterwards, the photosensitive coating of the exposed and hydrated wafer W is developed. Due to the decompression treatment, residual substances are forcibly reduced. Furthermore, due to the hydration treatment, the state of the photosensitive coating is stabilized while the residual substances are reduced. Therefore, the difference in the influence of residual substances between wafers W after decompression treatment is reduced. This suppresses pattern deviations between wafers W. Additionally, within the photosensitive coating of a wafer W, the difference in the influence of residual substances caused by different locations is also reduced, thus suppressing pattern deviations within a wafer W. Since the necessity to ensure consistent processing time between decompression treatments and the next processing step is reduced among wafers W, the total processing time of each wafer W can be prioritized, achieving high efficiency in substrate processing.

[0065] The wafer processing system 1 can also be configured to perform a de-stressing process after exposure processing. The ligands that detach during exposure processing can become the aforementioned residual substances. By performing a de-stressing process after exposure processing, deviations caused by the residual substances containing the detached ligands can be suppressed. Therefore, pattern deviations can be further suppressed.

[0066] For example, the wafer processing system 1 may also include a decompression and hydration system for performing decompression and hydration processes. The structure of the decompression and hydration system and control device is illustrated below.

[0067] [Decompression and Hydration System]

[0068] Figure 4 This is a schematic diagram illustrating the structure of a decompression and hydration system. For example... Figure 4As shown, the depressurization and hydration system 60 includes a chamber 61, a holding section 67, a depressurization device 68, and a hydration device 69. The chamber 61 is isolated from the exposure chamber (chamber 51) housing the wafer W for the exposure process of the photosensitive coating RF. Isolation of chamber 61 from chamber 51 means that the internal pressure of chamber 61 and the internal pressure of chamber 51 can be adjusted independently.

[0069] For example, chamber 61 has a base 62 and a cover 63. The base 62 has a horizontally extending upper surface. The cover 63 covers the space on the base 62 from above and the side. Thus, an internal space 66 for receiving the wafer W is formed between the cover 63 and the base 62. For example, the cover 63 has a peripheral wall 64 and a top plate 65. The peripheral wall 64 surrounds the internal space 66 about a vertical axis. The top plate 65 extends horizontally to close the upper end face of the peripheral wall 64. The cover 63 can be raised and lowered relative to the base 62, opening the internal space 66 to the outside by moving upward from the base 62. Thus, the wafer W can be inserted and removed relative to the internal space 66.

[0070] The wafer W is fed into the internal space 66 from below, with the support surface facing upwards, by the holding part 67, and is held by vacuum adsorption or the like. The pressure reduction device 68 reduces the pressure in the internal space 66 (within the chamber 61) while the wafer W is held by the holding part 67. Reducing the pressure in the internal space 66 means lowering the pressure in the internal space 66 than the pressure in the external space of the chamber 61. For example, the pressure reduction device 68 uses an electric pump or the like to draw out gas from the internal space 66, thereby reducing the pressure in the internal space 66.

[0071] The hydration device 69 exposes the photosensitive coated RF to a moisture-containing gas. For example, the hydration device 69 exposes the photosensitive coated RF to a moisture-containing gas by supplying the moisture-containing gas into the internal space 66 (within the chamber 61). For example, the hydration device 69 uses a pump to deliver the moisture-containing gas into the internal space 66. The moisture-containing gas can be a mixture of an inert gas and water vapor, or it can be air. When the moisture-containing gas is air, the hydration device 69 can also be a device that introduces air from the external space into the internal space 66 by connecting the internal space 66 to the external space through a valve or the like. The conditions of the hydration treatment in the hydration device 69 can be appropriately adjusted; for example, the photosensitive coated RF can be exposed to a gas or mist having a moisture concentration (humidity) equal to or higher than that of the air in the external space. Alternatively, instead of a moisture-containing gas, the hydration device 69 can supply the internal space 66 with a gas whose concentration of oxygen, nitric oxide, or nitrogen dioxide is higher than that of the air in the external space. In this case, it is believed that promoting the insolubility reaction of the photosensitive coating RF relative to the developing fluid by using the action of this gas can achieve the same effect as the hydration treatment described later. Thus, the gas used to expose the photosensitive coating after depressurization treatment using the depressurization device 68 is only required to contain at least a component that replaces the residual substances generated by the exposure treatment and enters the photosensitive coating RF to improve the characteristics of the exposed area (e.g., insolubility relative to the developing solution).

[0072] In the wafer processing system 1, the chamber 61 can be disposed in the first block G1, the second block G2, the third block G3, the fourth block G4, and the fifth block G5 (see reference). Figure 1 Any of the following. The decompression and hydration system 60 may also share chamber 61 with other devices. Figure 5 This is a schematic diagram illustrating the decompression and hydration system 60 that shares a chamber 61 with the heat treatment apparatus 37.

[0073] like Figure 5 As shown, the decompression and hydration system 60 and the heat treatment apparatus 37 share the aforementioned chamber 61. The heat treatment apparatus 37 also includes a hot plate 81 and a lifting device 82. The hot plate 81 extends horizontally and is supported by a base 62. The hot plate 81 has a built-in heater, such as an electric heating wire, to heat the photosensitive coating RF. The lifting device 82 supports the wafer W on the hot plate 81 and raises and lowers it. For example, the lifting device 82 has multiple lifting pins 83 that support the wafer W by passing through the base 62 and the hot plate 81 from below, and a lifting actuator 84 that raises and lowers the multiple lifting pins 83. Since the wafer W is supported by multiple lifting pins 83, the decompression and hydration system 60 may not have the aforementioned holding part 67.

[0074] Before heating by the heat treatment apparatus 37, in order to perform depressurization and hydration treatment, the depressurization apparatus 68 depressurizes the chamber 61 while the lifting device 82 raises multiple lifting pins 83 and the wafer W moves upward from the hot plate 81. Meanwhile, the hydration apparatus 69 introduces moisture-containing gas into the internal space 66 while the wafer W moves upward from the hot plate 81.

[0075] like Figure 6 As shown, the heat treatment apparatus 37 uses a lifting device 82 to lower multiple lifting pins 83, thereby allowing the hot plate 81 to support the wafer W. This allows the hot plate 81 to heat the wafer W. Thus, when the decompression and hydration system 60 and the heat treatment apparatus 37 share the same chamber 61, it can be assumed that the wafer W, after decompression and hydration treatments, is transported to the heat treatment apparatus 37 by the lifting device 82. Compared to the case where the heat treatment apparatus 37 and the decompression and hydration system 60 each have separate chambers, the transport distance for transporting the wafer W, after decompression and hydration treatments, to the heat treatment apparatus 37 can be shortened.

[0076] [Control device]

[0077] like Figure 7 As shown, the control device 100, as a functional component (hereinafter referred to as a "functional block"), includes a transport control unit 111, a film formation control unit 112, a heat treatment control unit 113, an exposure control unit 114, a decompression control unit 115, a hydration control unit 116, and a development control unit 117. The transport control unit 111 controls the wafer transport devices 22, 23, 33, 41, and 42 to transport the wafer W. For example, the transport control unit 111 controls the wafer transport devices 22, 23, and 33 to transport the wafer W from the cassette C to the film formation apparatus 34, and controls the wafer transport device 33 to transport the film-formed wafer W from the film formation apparatus 34 to the heat treatment apparatus 36. Additionally, the transport control unit 111 controls the wafer transport devices 33, 41, and 42 to transport the film-formed wafer W from the heat treatment apparatus 36 to the exposure apparatus 5.

[0078] The transport control unit 111 controls the wafer transport devices 33, 41, and 42 to transport the wafers W, which have undergone film deposition and exposure processing, from the exposure device 5 into the chamber 61. The transport control unit 111 controls the wafer transport devices 22, 23, and 33 to discharge the hydrated wafers W from the chamber 61 and transport them to the developing device 35, and then transport the developed wafers W from the developing device 35 to the cartridge C.

[0079] Film deposition control unit 112 controls film deposition processing apparatus 34 to perform film deposition processing on the wafer W conveyed by transport control unit 111 for photosensitive coating RF. Heat treatment control unit 113 controls heat treatment apparatus 36 to perform heat treatment on the photosensitive coating RF of the wafer W after film deposition processing, which is conveyed by transport control unit 111. Exposure control unit 114 controls exposure apparatus 5 to perform exposure processing on the photosensitive coating RF of the wafer W after film deposition processing, which is conveyed by transport control unit 111.

[0080] The depressurization control unit 115 controls the depressurization device 68 to depressurize the internal space 66 after the exposed wafer W is fed into the chamber 61 and before the wafer W is discharged from the chamber 61. After the internal space 66 is depressurized and before the wafer W is transported to the developing apparatus 35, the hydration control unit 116 controls the hydration device 69 to expose the photosensitive coating RF to a moisture-containing gas. For example, the hydration control unit 116 controls the hydration device 69 to introduce a moisture-containing gas into the internal space 66 while the wafer W is housed in the internal space and under depressurization. The developing control unit 117 controls the developing apparatus 35 to develop the photosensitive coating RF of the hydrated wafer W transported by the transport control unit 111.

[0081] The wafer processing system 1 can also perform exposure processing while the chamber 51 is under reduced pressure. For example, the exposure control unit 114 can also control the exposure apparatus 5 to perform exposure processing while the chamber 51 is under reduced pressure.

[0082] By depressurizing the chamber 51, the effect of the exposure process on the photosensitive coated RF can be stabilized. On the other hand, due to the difference in the elapsed time from the exposure time to the ejection time from the chamber 51, the amount of residual material may deviate. This deviation in the amount of residual material is reduced by depressurization after the exposure process. Therefore, it is possible to simultaneously stabilize the effect of the exposure process and suppress the deviation in the amount of residual material.

[0083] The exposure apparatus 5 can also be configured to perform a stitched exposure process on the photosensitive coating RF of the wafer W within the chamber 51. The stitched method refers to performing multiple exposures on multiple exposure fields arranged along the surface of the wafer W, each based on multiple masks (or intermediate masks). For example, the multiple exposure fields are divided into a first field and a second field, with the first field exposed based on a first mask and the second field exposed based on a second mask different from the first mask. In each of the multiple exposure fields, the exposure range of the first mask and the exposure range of the second mask may also partially overlap.

[0084] In the stitching method, sometimes the second mask is exposed after the first mask has been continuously exposed across all exposure fields. In this case, the time spent in the depressurized environment within chamber 51 differs between the first and second fields. Therefore, the amount of the aforementioned residual material differs between the first and second fields. Consequently, the linewidths may differ between the first and second fields. Even in such cases, the difference in the amount of residual material between the first and second fields can be mitigated through depressurization treatment after exposure. Therefore, depressurization treatment and hydration treatment after exposure are effective in suppressing linewidth differences between fields in the stitching method.

[0085] The wafer processing system 1 can also perform exposure processing while the chamber 51 is depressurized to a first pressure. In the depressurization process, the chamber 61 is depressurized to a second pressure that is higher than the first pressure.

[0086] For example, the exposure control unit 114 can also control the exposure device 5 to perform exposure processing while the chamber 51 is depressurized to a first pressure. The depressurization control unit 115 can also control the depressurization device 68 to depressurize the chamber 61 to a second pressure higher than the first pressure, without depressurizing it to the first pressure.

[0087] The first pressure is, for example, below 1 / 100,000 Pa. The second pressure is, for example, 1 to 80,000 Pa. The second pressure can be 5 to 60,000 Pa. For example, the second pressure is 10 to 30 Pa. Reaching the first pressure sometimes requires a long time. For example, reducing pressure from near atmospheric pressure to below 1 / 100,000 Pa (ultra-high vacuum) sometimes takes tens of seconds or more. In contrast, by setting the pressure in the decompression process to a second pressure higher than the first pressure, the reduction in processing efficiency caused by the decompression process can be suppressed.

[0088] The pressure reduction control unit 115 can also maintain the pressure inside the chamber 61 at the pressure after pressure reduction for a specified period of time during the pressure reduction process. The specified time can be, for example, 10 to 20 seconds, 10 to 60 seconds, or 30 seconds. The pressure reduction process can further suppress deviations caused by residual substances between wafers W and within a single wafer W.

[0089] The wafer processing system 1 can also be configured to perform a heat treatment of the photosensitive coating RF after hydration and before development. By supplementing the exposure process with heat treatment, energy saving in the exposure process can be achieved. On the other hand, residual substances may also affect the effect of heat treatment. By reducing the pressure to suppress the deviation in the amount of residual substances, and then improving the stability of the photosensitive coating state through hydration treatment, deviations in the effect of heat treatment can also be suppressed. In the heat treatment, the wafer W can be heated to 100–300°C, 150–250°C, or 180–220°C.

[0090] For example, the transport control unit 111 can also control the wafer transport device 33 to deliver the hydrated wafer W from the chamber 61 to the heat treatment device 37, and then transport the heat-treated wafer W from the heat treatment device 37 to the developing device 35. Alternatively, the control device 100 may also include a heat treatment control unit 118. The heat treatment control unit 118 controls the heat treatment device 37 to heat the photosensitive coating RF of the hydrated wafer W delivered by the transport control unit 111. After the internal space 66 is depressurized and before the wafer W is transported to the heat treatment device 37, the hydration control unit 116 controls the hydration device 69 to expose the photosensitive coating RF to a moisture-containing gas.

[0091] The wafer processing system 1 can also be configured to perform the following processes: a first heating process for photosensitive coating after exposure and before decompression; and a second heating process for photosensitive coating after hydration and before development. By performing the first heating process before decompression, deviations in the amount of residual material can be further suppressed. By suppressing deviations in the amount of residual material, deviations in the effect of the second heating process can also be suppressed.

[0092] For example, the transport control unit 111 can also control the wafer transport devices 33, 41, and 42 to transport the wafer W, which has undergone film deposition and exposure processing, from the exposure device 5 to the heat treatment device 37. Additionally, the transport control unit 111 can also control the wafer transport device 33 to send the wafer W, which has undergone the first heat treatment, from the heat treatment device 37 into the chamber 61. Furthermore, the transport control unit 111 can also control the wafer transport device 33 to transport the wafer W, which has undergone hydration processing, from the chamber 61 to the heat treatment device 37, and to transport the wafer W, which has undergone the second heat treatment, from the heat treatment device 37 to the developing device 35.

[0093] The heat treatment control unit 118 controls the heat treatment apparatus 37 to perform a first heat treatment on the photosensitive coated RF of the wafer W, which has undergone film formation and exposure treatment and is transported by the transport control unit 111. The heat treatment control unit 118 controls the heat treatment apparatus 37 to perform a second heat treatment on the photosensitive coated RF of the wafer W, which has undergone hydration treatment and is transported by the transport control unit 111.

[0094] Alternatively, in the first heat treatment, the wafer W is heated to a first temperature, and in the second heat treatment, the wafer W is heated to a second temperature higher than the first temperature. After sufficiently reducing the amount of residual material, heating at a high temperature allows for efficient utilization of thermal energy. For example, the first temperature can be 10–50°C lower than the second temperature, or 10–40°C lower, or 10–30°C lower.

[0095] The wafer processing system 1 may also be configured not to perform the heat treatment of photosensitive coating RF after hydration treatment and before development treatment. For example, the wafer processing system 1 may also be configured to perform a first heat treatment without performing a second heat treatment.

[0096] The following is for reference Figures 8-10 Examples illustrate the effects of decompression and hydration treatments. Figure 8 This is a schematic diagram illustrating the state of a photosensitive coated RF that has just been exposed. Figure 8 This represents the cross-section of the exposed portion and its surrounding portion in a photosensitive coated RF.

[0097] like Figure 8 As shown, the photosensitive coating RF immediately after exposure is considered to include an unexposed region R1, a semi-displaced region R2, and a fully displaced region R3. The unexposed region R1 is the area that was not exposed to the light used for exposure during the exposure process. Within the unexposed region R1, ligands LG are bonded to the molecule M1 (e.g., a molecule containing metal atoms) that constitutes the photosensitive coating.

[0098] The half-substitution region R2 and the fully substituted region R3 are the regions irradiated with exposure light during the exposure process. In the fully substituted region R3, the ligand LG attached to molecule M1 is replaced by a hydroxyl group OH. For example, a hydroxyl group OH is bonded at the site where the ligand LG is detached by the exposure process. In the half-substitution region R2, after the ligand LG is detached by the exposure process, there is an unbonded site of molecule M1 with an unbonded hydroxyl group OH.

[0099] The bonding of hydroxyl groups (OH) to unbonded sites is believed to occur gradually after exposure, while being hindered by residual substances such as detached ligands (LG). Therefore, the sizes of the half-displacement region R2 and the fully displaced region R3 may differ between wafers W due to varying post-exposure times. Furthermore, the amount of residual material may also vary depending on the location within the photosensitive coating (RF). For example, it is believed that the amount of residual material increases with the depth of the photosensitive coating (RF) from the surface. Figure 8 This indicates the following state: as the depth from the surface of the photosensitive coating RF increases, the amount of residual material increases. Therefore, as the depth from the surface of the photosensitive coating RF increases, the width of the semi-displacement region R2 increases, and the width of the displaced region R3 decreases.

[0100] Figure 9 This is a schematic diagram illustrating the state changes of a negatively coated photosensitive RF during wet development without a second heating process. When the wafer W, after exposure, undergoes the first heating process, as shown... Figure 9 As shown in (a), a condensation region R4 is newly formed in the photosensitive coating RF. The condensation region R4 is, for example, a region where molecules M1 are polymerized through dehydration condensation of molecules M1 in the replaced region R3. Dehydration condensation is less likely to occur in the half-replacement region R2, so the half-replacement region R2 also remains after the first heat treatment. Additionally, a portion of the replaced region R3 also remains.

[0101] like Figure 9 As shown in (b), the depressurization device 68 can also depressurize the chamber 61 during the depressurization process by drawing out residual material containing the ligand LG detached during the exposure process from the semi-displacement region R2. This reduces the residual material within the photosensitive coating RF. During the hydration process, the hydration device 69 can also expose the photosensitive coating RF to a moisture-containing gas by bonding the hydroxyl group OH to the unbonded site of the molecule M1 (replacing the ligand LG detached during the exposure process with the hydroxyl group OH). Thus, as... Figure 9 As shown in (c), the remaining semi-displaced region R2 is converted into a fully displaced region R3. Subsequently, during development, the unexposed region R1 dissolves in the developer and is removed. Thus, as... Figure 9 As shown in (d), the replacement region R3 and the condensation region R4 remain to form the resist pattern.

[0102] Without depressurization and hydration, the semi-displacement region R2, along with the unexposed region R1, dissolves in the developer and is removed. Therefore, as... Figure 9As shown in (e), a resist pattern with a smaller linewidth is formed compared to the case where decompression and hydration treatments are performed. The degree of linewidth reduction compared to the case where decompression and hydration treatments are performed varies depending on the size of the semi-displacement region R2. As mentioned above, the size of the semi-displacement region R2 varies depending on the elapsed time after exposure treatment. Therefore, linewidth deviations may occur depending on the elapsed time after exposure treatment.

[0103] Furthermore, as the depth increases from the surface of the photosensitive coating RF, the half-displacement region R2 increases and the width of the fully displaced region R3 decreases, a resist pattern that is easy to tip over is formed, with the linewidth decreasing as it approaches the surface of the wafer W.

[0104] Figure 10 This is a schematic diagram illustrating the state changes of a negative-type photosensitive coated RF during a first heat treatment, a second heat treatment, and a dry development process. As described above, when the wafer W after exposure is subjected to the first heat treatment, as... Figure 10 As shown in (a), a new condensation region R4 is formed in the photosensitive coating RF.

[0105] like Figure 10 As shown in (b), during the decompression treatment, residual material containing ligand LG, which has been detached by the exposure treatment, is drawn out from the semi-displacement region R2. Figure 10 As shown in (c), during the hydration treatment, hydroxyl groups (OH) are bonded to the unbonded sites of molecule M1, and the half-substituted region R2 is converted into the fully substituted region R3.

[0106] Subsequently, if a second heat treatment is performed, then as follows Figure 10 As shown in (d), dehydration condensation occurs in the displacement region R3, transforming it into a condensation region R4. In the portion transformed into condensation region R4 through hydration treatment, the ligand LG, converted into the hydroxyl OH molecule M1, also undergoes dehydration condensation. Subsequently, during development, the unexposed region R1 is removed. Therefore, as... Figure 10 As shown in (e), the condensation region R4 is retained to form the resist pattern.

[0107] The second heating treatment is performed without decompression and hydration treatments, while the semi-displacement region R2 remains. Therefore, as... Figure 10 As shown in (f), even after the replacement region R3 is converted into the condensed region R4, the half-replaced region R2 remains. Subsequently, during dry development, the unexposed region R1 and the half-replaced region R2 are removed. Therefore, as... Figure 10As shown in (g), a resist pattern with a smaller linewidth is formed compared to the case where decompression and hydration treatments are performed. The degree of linewidth reduction compared to the case where decompression and hydration treatments are performed varies depending on the size of the semi-displacement region R2. As mentioned above, the size of the semi-displacement region R2 varies depending on the elapsed time after exposure treatment. Therefore, linewidth deviations may occur depending on the elapsed time after exposure treatment.

[0108] Residual substances are not necessarily limited to ligand LG. For example, residual substances may also include components of the organic solvent in the film-forming liquid remaining in the photosensitive coating RF after heating using the heat treatment apparatus 36. The organic solvent components can be removed even before the exposure process. In this case, the wafer processing system 1 may also be configured to perform a depressurization process before the exposure process.

[0109] For example, the transport control unit 111 controls the wafer transport device 33 to transport the wafer W, after film deposition, from the heat treatment device 36 into the chamber 61. Additionally, the transport control unit 111 controls the wafer transport devices 33, 41, and 42 to transport the wafer W, after decompression treatment, to the exposure device 5. The transport control unit 111 also controls the wafer transport devices 33, 41, and 42 to transport the wafer W, after film deposition and exposure treatment, from the exposure device 5 to the heat treatment device 37 or the development device 35. During the period from exposure treatment to development treatment, if there is a moment when the wafer W is exposed to air, the ligand LG is replaced by the hydroxyl group OH at that moment. Therefore, after exposure treatment, it is possible to omit the step of transporting the wafer W into the chamber 61 for hydration treatment. The hydration device 69 can also be omitted from the structure of the wafer processing system 1.

[0110] Figure 11 This is a block diagram illustrating the hardware structure of the control device 100. For example... Figure 11 As shown, the control device 100 has a circuit 190. The circuit 190 has a processor 191, a memory 192, a storage device 193, and an input / output port 194.

[0111] The memory 193 includes, for example, one or more non-volatile storage media. The non-volatile storage media includes one or more storage devices. Examples of one or more storage devices include hard disk drives, solid-state drives, flash memory, etc. The non-volatile storage media may also include removable storage media such as optical discs. The memory 193 stores a program for causing the wafer processing system 1 to perform the following processes: a film-forming process for applying a photosensitive coating to the surface of the wafer W; placing the film-forming wafer W in a first chamber (e.g., chamber 51) and exposing the photosensitive coating in the first chamber; placing the film-forming wafer W in a second chamber different from the first chamber and performing a decompression process to reduce the pressure in the second chamber; after the decompression process and before the development process, performing a hydration process to expose the photosensitive coating to a moisture-containing gas; and performing a development process on the photosensitive coating of the wafer W after exposure and hydration. For example, the memory 193 stores a program for causing the control device 100 to constitute the aforementioned functional blocks.

[0112] Memory 192 includes one or more volatile storage media. Volatile storage media include one or more storage devices. Examples of one or more storage devices include random access memory (RAM). Memory 192 temporarily stores programs loaded from memory 193. Processor 191 includes one or more computing devices. Examples of computing devices include CPU (Central Processing Unit) or GPU (Graphics Processing Unit). Processor 191 executes programs loaded into memory 192, causing control device 100 to form the aforementioned functional blocks. Processor 191 may also temporarily store computation results in memory 192.

[0113] Input / output port 194 inputs and outputs control signals between wafer transport devices 22, 23, 33, 41, 42, film forming device 34, developing device 35, heat treatment device 36, heat treatment device 37, exposure device 5, decompression device 68 and hydration device 69 based on requests from processor 191.

[0114] The structure of the control device 100 shown above is an example and can be modified. All of the aforementioned functional blocks can also be constructed without executing the program in the memory 193. For example, at least some functional blocks can be constructed using circuits dedicated to their functions, such as ASICs (Application Specialized Integrated Circuits).

[0115] The above describes an example of combining the film-forming processing apparatus 34, the heat treatment apparatus 36, the exposure apparatus 5, the decompression apparatus 68, the hydration apparatus 69, the heat treatment apparatus 37, and the developing apparatus 35 into a single apparatus. These can be divided into multiple apparatuses, or each apparatus can independently have a cartridge station 2. In this case, it is sufficient that at least one apparatus has a chamber 61 isolated from the chamber 51, a decompression apparatus 68, a hydration apparatus 69, a transport apparatus (e.g., wafer transport apparatus 22, wafer transport apparatus 23, wafer transport apparatus 33), a transport control unit 111, a decompression control unit 115, and a hydration control unit 116.

[0116] The transport control unit 111 controls the wafer transport device 33 to feed the wafer W, after the exposure process of the photosensitive coated RF has been completed and before the development process of the photosensitive coated RF, into and out of the chamber 61. The decompression control unit 115 controls the decompression device 68 to depressurize the chamber 61 after the wafer W is fed into the chamber 61 and before the wafer W is discharged from the chamber 61. After the chamber 61 is depressurized, the hydration control unit 116 controls the hydration device 69 to expose the photosensitive coated RF to a moisture-containing gas.

[0117] Figure 12 This is a schematic diagram illustrating the division of the film-forming processing apparatus 34, the heat treatment apparatus 36, the exposure apparatus 5, the decompression apparatus 68, the hydration apparatus 69, the heat treatment apparatus 37, and the developing apparatus 35 into apparatuses A1, A2, and A3. Apparatus A1 includes a cassette station 2, the film-forming processing apparatus 34, the heat treatment apparatus 36, and the exposure apparatus 5. Apparatus A1 performs film-forming processing by the film-forming processing apparatus 34, heat treatment by the heat treatment apparatus 36, and exposure treatment by the exposure apparatus 5 on the wafer W taken from cassette C, and returns the exposed wafer W to cassette C.

[0118] A cassette C containing the exposed wafer W is conveyed to cassette station 2 of apparatus A2. Apparatus A2 includes cassette station 2, a depressurization and hydration system 60, and a heat treatment device 37. Apparatus A2 performs depressurization treatment by the depressurization device 68, hydration treatment by the hydration device 69, and heat treatment by the heat treatment device 37 on the wafer W removed from cassette C, so that the heat-treated wafer W is returned to cassette C. Figure 12 In the structure, the chamber 61 of the decompression and hydration system 60 is also isolated from the chamber 51 of the exposure device 5.

[0119] A cassette C containing heat-treated wafers W is conveyed to cassette station 2 of apparatus A3. Apparatus A3 has a developing apparatus 35. Apparatus A3 uses the developing apparatus 35 to develop the wafers W removed from cassette C and returns the developed wafers W to cassette C.

[0120] Figure 13This is a schematic diagram illustrating the configuration of film-forming apparatus 34, heat treatment apparatus 36, exposure apparatus 5, decompression apparatus 68, hydration apparatus 69, heat treatment apparatus 37, and developing apparatus 35, divided into apparatuses A11, A12, and A13. Apparatus A11 includes a cassette station 2, film-forming apparatus 34, and heat treatment apparatus 36. Apparatus A11 performs film-forming processing by film-forming apparatus 34 and heat treatment by heat treatment apparatus 36 on wafer W taken from cassette C, and returns the heat-treated wafer W to cassette C.

[0121] A cassette C containing a wafer W that has undergone heat treatment by the heat treatment apparatus 36 is transported to cassette station 2 of apparatus A12. Apparatus A12 includes an exposure apparatus 5, a depressurization apparatus 68, a hydration apparatus 69, and a heat treatment apparatus 37. Apparatus A12 performs exposure treatment by the exposure apparatus 5, depressurization treatment by the depressurization apparatus 68, hydration treatment by the hydration apparatus 69, and heat treatment by the heat treatment apparatus 37 on the wafer W taken from cassette C, and returns the heat-treated wafer W to cassette C. In apparatus A12, the chamber 61 of the depressurization and hydration system 60 is isolated from the chamber 51 of the exposure apparatus 5.

[0122] A cassette C containing wafers W that have undergone heat treatment by the heat treatment apparatus 37 is transported to cassette station 2 of apparatus A13. Apparatus A13 has a developing apparatus 35. Apparatus A13 uses the developing apparatus 35 to develop the wafers W taken from cassette C and returns the developed wafers W to cassette C.

[0123] Figure 14 This is a schematic diagram illustrating the configuration of film-forming apparatus 34, heat treatment apparatus 36, exposure apparatus 5, decompression apparatus 68, hydration apparatus 69, heat treatment apparatus 37, and developing apparatus 35 as apparatuses A21, A22, and A23. Apparatus A21 includes a cassette station 2, film-forming apparatus 34, and heat treatment apparatus 36. Apparatus A21 performs film-forming processing by film-forming apparatus 34 and heat treatment by heat treatment apparatus 36 on wafers W taken from cassette C, and returns the heat-treated wafers W to cassette C.

[0124] A cassette C containing wafers W that have undergone heat treatment by heat treatment apparatus 36 is transported to cassette station 2 of apparatus A22. Apparatus A22 includes an exposure apparatus 5, a depressurization apparatus 68, and a hydration apparatus 69. Apparatus A22 performs exposure treatment by exposure apparatus 5, depressurization treatment by depressurization apparatus 68, and hydration treatment by hydration apparatus 69 on wafers W removed from cassette C, and returns the hydrated wafers W to cassette C. In apparatus A22, the chamber 61 of the depressurization and hydration system 60 is isolated from the chamber 51 of the exposure apparatus 5.

[0125] The cassette C containing the hydrated wafers W is conveyed to the cassette station 2 of the apparatus A23. The apparatus A23 has a heat treatment unit 37 and a developing unit 35. The apparatus A23 performs heat treatment by the heat treatment unit 37 and developing treatment by the developing unit 35 on the wafers W taken out from the cassette C, and returns the developed wafers W to the cassette C.

[0126] Figure 15 This is a schematic diagram illustrating the division of the film-forming processing apparatus 34, heat treatment apparatus 36, exposure apparatus 5, decompression apparatus 68, hydration apparatus 69, heat treatment apparatus 37, and developing apparatus 35 into apparatuses A31 and A32. Apparatus A31 includes the film-forming processing apparatus 34, heat treatment apparatus 36, exposure apparatus 5, decompression apparatus 68, and hydration apparatus 69. Apparatus A31 performs film-forming processing by the film-forming processing apparatus 34, heat treatment by the heat treatment apparatus 36, exposure treatment by the exposure apparatus 5, decompression treatment by the decompression apparatus 68, and hydration treatment by the hydration apparatus 69 on the wafer W taken from the cassette C, and returns the hydrated wafer W to the cassette C. In apparatus A31, the chamber 61 of the decompression and hydration system 60 is isolated from the chamber 51 of the exposure apparatus 5.

[0127] The cassette C containing the hydrated wafers W is conveyed to the cassette station 2 of the apparatus A32. The apparatus A32 has a heat treatment unit 37 and a developing unit 35. The apparatus A32 performs heat treatment by the heat treatment unit 37 and developing treatment by the developing unit 35 on the wafers W taken out from the cassette C, and returns the developed wafers W to the cassette C.

[0128] [Substrate Processing Flow]

[0129] As an example of a substrate processing method, a substrate processing flow executed by the wafer processing system 1 is illustrated. The flow illustrated below includes both the first heating process and the second heating process described above. Figure 16 As shown, the wafer processing system 1 executes steps S01, S02, S03, S04, and S05. In step S01, the transport control unit 111 controls the wafer transport devices 22 and 23 to remove the wafer W from the cassette C. In step S02, the transport control unit 111 controls the wafer transport device 33 to transport the wafer W removed from the cassette C to the film deposition processing apparatus 34. In step S03, the film deposition control unit 112 controls the film deposition processing apparatus 34 to perform film deposition processing on the wafer W transported by the wafer transport device 33. In step S04, the transport control unit 111 controls the wafer transport device 33 to transport the film-deposited wafer W from the film deposition processing apparatus 34 to the heat treatment apparatus 36. In step S05, the heat treatment control unit 113 controls the heat treatment apparatus 36 to perform heat treatment on the wafer W transported by the wafer transport device 33.

[0130] Next, the wafer processing system 1 executes steps S06, S07, S08, and S09. In step S06, the transport control unit 111 controls the wafer transport device 33 to transport the heat-treated wafer W from the heat treatment device 36. In step S07, the transport control unit 111 controls the wafer transport devices 41 and 42 to deliver the wafer W transported by the wafer transport device 33 to the exposure device 5. In step S08, the exposure control unit 114 controls the exposure device 5 to perform exposure processing on the wafer W delivered by the wafer transport devices 41 and 42. In step S09, the transport control unit 111 controls the wafer transport devices 41 and 42 to deliver the exposed wafer W from the exposure device 5.

[0131] Next, as Figure 17 As shown, the wafer processing system 1 executes steps S11 and S12. In step S11, the transport control unit 111 controls the wafer transport device 33 to transport the exposed wafer W, fed in by the wafer transport devices 41 and 42, to the heat treatment device 37. In step S12, the heat treatment control unit 118 controls the heat treatment device 37 to perform a first heat treatment on the wafer W transported by the wafer transport device 33.

[0132] Next, the wafer processing system 1 executes steps S13 and S14. In step S13, the transport control unit 111 controls the wafer transport device 33 to deliver the wafer W, which has undergone the first heat treatment, from the heat treatment device 37 into the chamber 61. In step S14, the depressurization control unit 115 controls the depressurization device 68 to depressurize the chamber 61 containing the wafer W delivered by the wafer transport device 33 (depressurization treatment). Afterward, the hydration control unit 116 controls the hydration device 69 to supply moisture-containing gas into the depressurized chamber 61 (hydration treatment).

[0133] Next, the wafer processing system 1 executes steps S15, S16, S17, and S18. In step S15, the transport control unit 111 controls the wafer transport device 33 to deliver the hydrated wafer W from the chamber 61 and transport it to the heat treatment apparatus 37. In step S16, the heat treatment control unit 118 controls the heat treatment apparatus 37 to perform a second heat treatment on the wafer W transported by the wafer transport device 33. In step S17, the transport control unit 111 controls the wafer transport device 33 to transport the second heat-treated wafer W from the heat treatment apparatus 37 to the developing apparatus 35. In step S18, the developing control unit 117 controls the developing apparatus 35 to perform a developing process on the wafer W transported by the wafer transport device 33.

[0134] Next, the wafer processing system 1 executes steps S19 and S21. In step S19, the wafer transport device 33 transports the developed wafer W from the developing device 35. In step S21, the transport control unit 111 controls the wafer transport devices 22 and 23 so that the developed wafer W transported by the wafer transport device 33 returns to the cassette C. This completes one example of the substrate processing flow.

[0135] [Example of effect confirmation]

[0136] For wafer W, resist patterns were formed using different substrate processing flows, and the effects of decompression and hydration treatments were confirmed by comparing linewidths. The results are presented below.

[0137] (Confirmed Example 1)

[0138] In the following four substrate processing flows, multiple resist patterns are formed by varying the amount of light exposure during the exposure process, and the linewidth is measured. Processes 1 and 2 differ in the presence or absence of decompression and hydration treatments. Processes 3 and 4 also differ in the presence or absence of decompression and hydration treatments. Processes 1 and 2 differ from processes 3 and 4 in the presence or absence of a second heating treatment.

[0139] Process 1) The film formation process, the first heating process, and the wet development process are performed sequentially. In the film formation process, a negative metal resist film is formed at 22 nm. In the first heating process, the photosensitive coating RF is heated to 180°C and maintained at 180°C for 60 seconds.

[0140] Process 2) The following steps are performed sequentially: film formation, first heating treatment, depressurization treatment, hydration treatment, and wet development treatment. In the film formation treatment, a negative metal resist film is formed at 22 nm. In the first heating treatment, the photosensitive coating RF is heated to 180°C and maintained at 180°C for 60 seconds. In the depressurization treatment, the pressure inside chamber 61 is reduced to 0 Pa and maintained for 60 seconds. In the hydration treatment, air is supplied to chamber 61.

[0141] Step 3) The film formation process, first heating process, second heating process, and wet development process are performed sequentially. In the film formation process, a negative metal resist film is formed at 22 nm. In both the first and second heating processes, the photosensitive coating RF is heated to 180°C and maintained at 180°C for 60 seconds.

[0142] Step 4) The following processes are performed sequentially: film formation, first heating treatment, depressurization treatment, hydration treatment, second heating treatment, and wet development treatment. In the film formation treatment, a negative metal resist film is formed at 22 nm. In both the first and second heating treatments, the photosensitive coating RF is heated to 180°C and maintained at 180°C for 60 seconds. In the depressurization treatment, the pressure inside chamber 61 is reduced to 0 Pa and maintained for 60 seconds. In the hydration treatment, air is supplied to chamber 61.

[0143] Figure 18 These are graphs illustrating the measurement results of the line width in each of processes 1 to 4. Figure 18 The horizontal axis represents the amount of light exposure during the exposure process, and the vertical axis represents the linewidth. Curve PL1 represents the linewidth measurement result in process 1. Curve PL2 represents the linewidth measurement result in process 2. Curve PL3 represents the linewidth measurement result in process 3. Curve PL4 represents the linewidth measurement result in process 4.

[0144] Curve PL2 for process 2, which includes decompression and hydration treatments, shifts to the upper left relative to curve PL1 for process 1, which does not include decompression and hydration treatments. This result indicates that the tolerance of the exposed portion to the developer is improved by decompression and hydration treatments.

[0145] Similarly, curve PL4 of process 4, which includes decompression and hydration treatments, shifts to the upper left relative to curve PL3 of process 3, which does not include decompression and hydration treatments. This result indicates that the tolerance of the exposed portion to the developer is improved by decompression and hydration treatments.

[0146] Furthermore, curves PL3 and PL4 for processes 3 and 4, which include the second heat treatment, shift to the upper left relative to curves PL1 and PL2 for processes 1 and 2, which do not include the second heat treatment. This result indicates that the resistance of the exposed portion to the developer is improved by the second heat treatment.

[0147] (Confirmed Example 2)

[0148] In the following six substrate processing flows, multiple resist patterns are formed by varying the amount of light exposure during the exposure process, and the linewidth is measured. Process 11 differs from processes 12-16 in the presence or absence of decompression and hydration treatments. Processes 12-16 also differ in the conditions of the decompression treatment.

[0149] Step 11) The film formation process, the first heating process, and the wet development process are performed sequentially. In the film formation process, a negative metal resist film is formed at 22 nm. In the first heating process, the photosensitive coating RF is heated to 180°C and maintained at 180°C for 60 seconds.

[0150] Step 12) The following processes are performed sequentially: film formation, first heating treatment, depressurization treatment, hydration treatment, and wet development treatment. In the film formation treatment, a negative metal resist film is formed at 22 nm. In the first heating treatment, the photosensitive coating RF is heated to 180°C and maintained at 180°C for 60 seconds. In the depressurization treatment, the pressure inside chamber 61 is reduced to 0 Pa and maintained at this pressure for 30 seconds. In the hydration treatment, air is supplied to chamber 61.

[0151] Step 13) The following processes are performed sequentially: film formation, first heating treatment, depressurization treatment, hydration treatment, and wet development treatment. In the film formation treatment, a negative metal resist film is formed at 22 nm. In the first heating treatment, the photosensitive coating RF is heated to 180°C and maintained at 180°C for 60 seconds. In the depressurization treatment, the pressure inside chamber 61 is reduced to 0 Pa and maintained at this pressure for 120 seconds. In the hydration treatment, air is supplied to chamber 61.

[0152] Step 14) The following processes are performed sequentially: film formation, first heating treatment, depressurization treatment, hydration treatment, and wet development treatment. In the film formation treatment, a negative metal resist film is formed at 22 nm. In the first heating treatment, the photosensitive coating RF is heated to 180°C and maintained at 180°C for 60 seconds. In the depressurization treatment, the pressure inside chamber 61 is reduced to 15 Pa and maintained for 60 seconds. In the hydration treatment, air is supplied to chamber 61.

[0153] Step 15) The following processes are performed sequentially: film formation, first heating treatment, depressurization treatment, hydration treatment, and wet development treatment. In the film formation treatment, a negative metal resist film is formed at 22 nm. In the first heating treatment, the photosensitive coating RF is heated to 180°C and maintained at 180°C for 60 seconds. In the depressurization treatment, the pressure inside chamber 61 is reduced to 30 Pa and maintained for 30 seconds. In the hydration treatment, air is supplied to chamber 61.

[0154] Step 16) The following processes are performed sequentially: film formation, first heating treatment, depressurization treatment, hydration treatment, and wet development treatment. In the film formation treatment, a negative metal resist film is formed at 22 nm. In the first heating treatment, the photosensitive coating RF is heated to 180°C and maintained at 180°C for 60 seconds. In the depressurization treatment, the pressure inside chamber 61 is reduced to 30 Pa and maintained for 120 seconds. In the hydration treatment, air is supplied to chamber 61.

[0155] Figure 19 These are graphs illustrating the measurement results of the line width in each of processes 11 to 16. Figure 19The horizontal axis represents the amount of light exposure during the exposure process, and the vertical axis represents the linewidth. Curve PL11 represents the linewidth measurement result in process 11. Curve PL12 represents the linewidth measurement result in process 12. Curve PL13 represents the linewidth measurement result in process 13. Curve PL14 represents the linewidth measurement result in process 14. Curve PL15 represents the linewidth measurement result in process 15. Curve PL16 represents the linewidth measurement result in process 16.

[0156] Curves PL12-PL16 for processes 12-16, which include decompression and hydration treatments, shift to the upper left relative to curve PL11 for process 11, which does not include decompression and hydration treatments. On the other hand, no substantial difference was identified between curves PL12-16. This result indicates that the effect of decompression treatment saturates at least under decompression conditions where the post-decompression pressure is 30 Pa or higher and the post-decompression pressure is maintained for 30 seconds or less.

[0157] (Confirmed Example 3)

[0158] In the following four substrate processing flows, multiple resist patterns are formed by varying the amount of light exposure during the exposure process, and the linewidth is measured. Processes 21 and 22 differ in the presence or absence of depressurization and hydration treatments. Processes 23 and 24 also differ in the presence or absence of depressurization and hydration treatments. Processes 21 and 22 differ from processes 23 and 24 in the conditions of the second heating treatment. Furthermore, processes 24 and 22 differ in the order of the depressurization and hydration treatments and the second heating treatment.

[0159] Step 21) The following processes are performed sequentially: film formation, first heating treatment, second heating treatment, and wet development. In the film formation process, a negative metal resist film is formed at 22 nm. In the first heating treatment, the photosensitive coating RF is heated to 180°C and maintained at 180°C for 60 seconds. In the second heating treatment, the photosensitive coating RF is heated to 200°C and maintained at 200°C for 120 seconds.

[0160] Step 22) The following processes are performed sequentially: film formation, first heating treatment, depressurization treatment, hydration treatment, second heating treatment, and wet development treatment. In the film formation treatment, a negative metal resist film is formed at 22 nm. In the first heating treatment, the photosensitive coating RF is heated to 180°C and maintained at 180°C for 60 seconds. In the depressurization treatment, the pressure inside chamber 61 is reduced to 30 Pa and maintained at this pressure for 60 seconds. In the hydration treatment, air is supplied to chamber 61. In the second heating treatment, the photosensitive coating RF is heated to 200°C and maintained at 200°C for 120 seconds.

[0161] Step 23) The following processes are performed sequentially: film formation, first heating treatment, second heating treatment, and wet development. In the film formation process, a negative metal resist film is formed at 22 nm. In the first heating treatment, the photosensitive coating RF is heated to 180°C and maintained at 180°C for 60 seconds. In the second heating treatment, the photosensitive coating RF is heated to 200°C and maintained at 200°C for 90 seconds.

[0162] Step 24) The following processes are performed sequentially: film formation, first heating treatment, second heating treatment, depressurization treatment, hydration treatment, and wet development treatment. In the film formation treatment, a negative metal resist film is formed at 22 nm. In the first heating treatment, the photosensitive coating RF is heated to 180°C and maintained at 180°C for 60 seconds. In the second heating treatment, the photosensitive coating RF is heated to 200°C and maintained at 200°C for 90 seconds. In the depressurization treatment, the pressure inside chamber 61 is reduced to 30 Pa and maintained for 60 seconds. In the hydration treatment, air is supplied to chamber 61.

[0163] Figure 20 These are graphs showing the measurement results of the line widths for each of processes 21 to 24. Figure 20 The horizontal axis represents the amount of light exposure during the exposure process, and the vertical axis represents the linewidth. Curve PL21 represents the linewidth measurement result in process 21. Curve PL22 represents the linewidth measurement result in process 22. Curve PL23 represents the linewidth measurement result in process 23. Curve PL24 represents the linewidth measurement result in process 24.

[0164] Compared to process 21, curve PL23, corresponding to process 23 with a shorter second heating treatment time, shifts to the lower right relative to curve PL23 corresponding to process 21. This result indicates that the tolerance of the exposed portion to the developing gas decreases due to shortening the second heating treatment time. No substantial difference was identified between curve PL24 based on process 24 including decompression and hydration treatments and curve PL23 based on process 23 without decompression and hydration treatments. This result indicates that even if decompression and hydration treatments are performed after the second heating treatment, their effect is not achieved. This is believed to be because even after polymerizing molecule M1 by dehydration condensation and performing decompression and hydration treatments, the polymerized region does not expand.

[0165] The curve PL22 for process 22, which involves depressurization and hydration treatments prior to the second heat treatment in process 21, shifts to the upper left relative to the curve PL21 for process 21. This result indicates that depressurization and hydration treatments prior to the second heat treatment improve the tolerance of the exposed portion to the developing gas. This is believed to be because the depressurization and hydration treatments cause the hydroxyl groups (OH) to bond to the unbonded portions of molecule M1, thereby expanding the polymerized region during the second heat treatment.

[0166] (Confirmed Example 4)

[0167] In the following five substrate processing flows, multiple resist patterns are formed by varying the amount of light exposure during the exposure process, and the linewidth is measured. Process 31 differs from processes 32-35 in the presence or absence of decompression and hydration treatments. Processes 32-35 also differ in the length of the heating time in the second heating treatment.

[0168] Step 31) The following processes are performed sequentially: film formation, first heating treatment, second heating treatment, and dry development. In the film formation process, a negative metal resist film is formed at 22 nm. In the first heating treatment, the photosensitive coating RF is heated to 180°C and maintained at 180°C for 60 seconds. In the second heating treatment, the photosensitive coating RF is heated to 200°C and maintained at 200°C for 90 seconds.

[0169] Step 32) The following processes are performed sequentially: film formation, first heating treatment, depressurization treatment, hydration treatment, second heating treatment, and dry development treatment. In the film formation treatment, a negative metal resist film is formed at 22 nm. In the first heating treatment, the photosensitive coating RF is heated to 180°C and maintained at 180°C for 60 seconds. In the depressurization treatment, the pressure inside chamber 61 is reduced to 30 Pa and maintained at this pressure for 60 seconds. In the hydration treatment, air is supplied to chamber 61. In the second heating treatment, the photosensitive coating RF is heated to 200°C and maintained at 200°C for 30 seconds.

[0170] Process 33) sequentially performs film formation, first heating treatment, depressurization treatment, hydration treatment, second heating treatment, and dry development treatment. In the film formation treatment, a negative metal resist film is formed at 22 nm. In the first heating treatment, the photosensitive coating RF is heated to 180°C and maintained at 180°C for 60 seconds. In the depressurization treatment, the pressure inside chamber 61 is reduced to 30 Pa and maintained at the reduced pressure for 60 seconds. In the hydration treatment, air is supplied to chamber 61. In the second heating treatment, the photosensitive coating RF is heated to 200°C and maintained at 200°C for 60 seconds.

[0171] Step 34) The following processes are performed sequentially: film formation, first heating treatment, depressurization treatment, hydration treatment, second heating treatment, and dry development treatment. In the film formation treatment, a negative metal resist film is formed at 22 nm. In the first heating treatment, the photosensitive coating RF is heated to 180°C and maintained at 180°C for 60 seconds. In the depressurization treatment, the pressure in chamber 61 is reduced to 30 Pa and maintained at this pressure for 60 seconds. In the hydration treatment, air is supplied to chamber 61. In the second heating treatment, the photosensitive coating RF is heated to 200°C and maintained at 200°C for 90 seconds.

[0172] Step 35) sequentially performs film formation, first heating treatment, depressurization treatment, hydration treatment, second heating treatment, and dry development treatment. In the film formation treatment, a negative metal resist film is formed at 22 nm. In the first heating treatment, the photosensitive coating RF is heated to 180°C and maintained at 180°C for 60 seconds. In the depressurization treatment, the pressure in chamber 61 is reduced to 30 Pa and maintained for 60 seconds. In the hydration treatment, air is supplied to chamber 61. In the second heating treatment, the photosensitive coating RF is heated to 200°C and maintained at 200°C for 120 seconds.

[0173] Figure 21 These are graphs showing the measurement results of the line widths for each of processes 31 to 35. Figure 21 The horizontal axis represents the amount of light exposure during the exposure process, and the vertical axis represents the linewidth. Curve PL31 represents the linewidth measurement result in process 31. Curve PL32 represents the linewidth measurement result in process 32. Curve PL33 represents the linewidth measurement result in process 33. Curve PL34 represents the linewidth measurement result in process 34. Curve PL35 represents the linewidth measurement result in process 35.

[0174] The PL32 curve for process 32, which involves decompression and hydration treatments and a second heating treatment time of 30 seconds, largely overlaps with the PL31 curve for process 31. This result indicates that even reducing the second heating treatment time from 90 seconds to 30 seconds can suppress the decrease in the exposed portion's tolerance to the developing gas through decompression and hydration treatments. Compared to process 32, the PL33 curve for process 33, which extends the second heating treatment time to 60 seconds, shifts to the upper left relative to the PL32 curve for process 32. Compared to process 33, the PL34 curve for process 34, which extends the second heating treatment time to 90 seconds, shifts further to the upper left relative to the PL33 curve for process 33. These results indicate that the tolerance of the exposed portion to the developing gas is improved by extending the second heating treatment time.

[0175] Compared to process 34, the curve PL35 of process 35, which extends the second heat treatment time to 120 seconds, largely overlaps with the curve PL34 of process 34. This result indicates that extending the second heat treatment time improves the saturation of the exposed portion relative to the developing gas within 60–90 seconds.

[0176] exist Figure 20 The figure shows that, without decompression and hydration treatments, shortening the second heating time from 120 seconds to 90 seconds reduces the tolerance of the exposed portion to the developing gas (refer to the comparison of curves PL21 and PL23). On the other hand, in Figure 21 The figure shows that even when the second heating time is shortened from 120 seconds to 90 seconds after decompression and hydration treatments, the resistance of the exposed portion to the developing gas does not decrease (see the comparison of curves PL34 and PL35). This result indicates that by performing decompression and hydration treatments before the second heating treatment, the heating time in the second heating treatment can be shortened.

[0177] (Confirmed Example 5)

[0178] In the following four substrate processing flows, multiple resist patterns are formed by varying the amount of light irradiation during the exposure process, and the linewidth is measured. Process 41 differs from processes 42-44 in the presence or absence of decompression and hydration treatments. Processes 42-44 also differ in the temperature of the first heating treatment.

[0179] Step 41) The following processes are performed sequentially: film formation, first heating treatment, second heating treatment, and dry development. In the film formation process, a negative metal resist film is formed at 22 nm. In the first heating treatment, the photosensitive coating RF is heated to 180°C and maintained at 180°C for 60 seconds. In the second heating treatment, the photosensitive coating RF is heated to 200°C and maintained at 200°C for 90 seconds.

[0180] Step 42) The following processes are performed sequentially: film formation, first heating treatment, depressurization treatment, hydration treatment, second heating treatment, and dry development treatment. In the film formation treatment, a negative metal resist film is formed at 22 nm. In the first heating treatment, the photosensitive coating RF is heated to 160°C and maintained at 160°C for 60 seconds. In the depressurization treatment, the pressure inside chamber 61 is reduced to 30 Pa and maintained at this pressure for 60 seconds. In the hydration treatment, air is supplied to chamber 61. In the second heating treatment, the photosensitive coating RF is heated to 200°C and maintained at 200°C for 90 seconds.

[0181] Step 43) The following processes are performed sequentially: film formation, first heating treatment, depressurization treatment, hydration treatment, second heating treatment, and dry development treatment. In the film formation treatment, a negative metal resist film is formed at 22 nm. In the first heating treatment, the photosensitive coating RF is heated to 170°C and maintained at 170°C for 60 seconds. In the depressurization treatment, the pressure inside chamber 61 is reduced to 30 Pa and maintained at this pressure for 60 seconds. In the hydration treatment, air is supplied to chamber 61. In the second heating treatment, the photosensitive coating RF is heated to 200°C and maintained at 200°C for 90 seconds.

[0182] Step 44) sequentially performs film formation, first heating treatment, depressurization treatment, hydration treatment, second heating treatment, and dry development treatment. In the film formation treatment, a negative metal resist film is formed at 22 nm. In the first heating treatment, the photosensitive coating RF is heated to 180°C and maintained at 180°C for 60 seconds. In the depressurization treatment, the pressure inside chamber 61 is reduced to 30 Pa and maintained at the reduced pressure for 60 seconds. In the hydration treatment, air is supplied to chamber 61. In the second heating treatment, the photosensitive coating RF is heated to 200°C and maintained at 200°C for 90 seconds.

[0183] Figure 22 These are graphs illustrating the measurement results of the line width in each of processes 41 to 44. Figure 22 The horizontal axis represents the amount of light exposure during the exposure process, and the vertical axis represents the linewidth. Curve PL41 represents the linewidth measurement result in process 41. Curve PL42 represents the linewidth measurement result in process 42. Curve PL43 represents the linewidth measurement result in process 43. Curve PL44 represents the linewidth measurement result in process 44.

[0184] The curves PL42-44 for processes 42-44, which include decompression and hydration treatments, are shifted to the upper left relative to the curve PL41 for process 41, which does not include decompression and hydration treatments. Compared to process 42, the curve PL43 for process 43, which raises the temperature of the first heating treatment to 170°C, is slightly shifted to the upper left relative to the curve PL42 for process 42. Compared to process 43, the curve PL44 for process 44, which raises the temperature of the first heating treatment to 180°C, is slightly shifted to the upper left relative to the curve PL43 for process 43. However, the difference between curves PL42-44 is small compared to the difference between curves PL1 and curves PL42-44. This result indicates that the second heating treatment, which involves decompression and hydration treatments, is dominant in improving the tolerance of the exposed portion to the developing gas compared to the first heating treatment before decompression and hydration.

[0185] (Confirmed Example 6)

[0186] In the following four substrate processing flows, multiple resist patterns are formed by varying the amount of light irradiation during the exposure process, and the linewidth is measured. Processes 51 and 52 differ in the presence or absence of decompression and hydration processes. Processes 51 and 53 differ in the placement time of the wafer W from the exposure process to the first heating process. Processes 52 and 54 differ in the order of the decompression and hydration processes relative to the first heating process.

[0187] Step 51) The following processes are performed sequentially: film formation, first heating treatment, second heating treatment, and dry development. In the film formation process, a negative metal resist film is formed at 22 nm. In the first heating treatment, the photosensitive coating RF is heated to 180°C and maintained at 180°C for 60 seconds. In the second heating treatment, the photosensitive coating RF is heated to 200°C and maintained at 200°C for 90 seconds.

[0188] Step 52) sequentially performs film formation, first heating treatment, depressurization treatment, hydration treatment, second heating treatment, and dry development treatment. In the film formation treatment, a negative metal resist film is formed at 22 nm. In the first heating treatment, the photosensitive coating RF is heated to 180°C and maintained at 180°C for 60 seconds. In the depressurization treatment, the pressure in chamber 61 is reduced to 30 Pa and maintained for 60 seconds. In the hydration treatment, air is supplied to chamber 61. In the second heating treatment, the photosensitive coating RF is heated to 200°C and maintained at 200°C for 90 seconds.

[0189] Step 53) The following processes are performed sequentially: film formation, wafer W placement, first heating treatment, depressurization treatment, hydration treatment, second heating treatment, and dry development treatment. In the film formation process, a negative metal resist film is formed at 22 nm. In the wafer W placement process, the wafer W is placed for 48 hours while the photosensitive coating RF is exposed to air. In the first heating treatment, the photosensitive coating RF is heated to 180°C and maintained at 180°C for 60 seconds. In the depressurization treatment, the pressure in chamber 61 is reduced to 30 Pa and maintained at the reduced pressure for 60 seconds. In the hydration treatment, air is supplied to chamber 61. In the second heating treatment, the photosensitive coating RF is heated to 200°C and maintained at 200°C for 90 seconds.

[0190] Step 54) sequentially performs film formation, decompression treatment, hydration treatment, first heating treatment, second heating treatment, and dry development treatment. In the film formation treatment, a negative metal resist film is formed at 22 nm. In the decompression treatment, the pressure in chamber 61 is reduced to 30 Pa and maintained for 60 seconds. In the hydration treatment, air is supplied to chamber 61. In the first heating treatment, the photosensitive coating RF is heated to 180°C and maintained at 180°C for 60 seconds. In the second heating treatment, the photosensitive coating RF is heated to 200°C and maintained at 200°C for 90 seconds.

[0191] Figure 23 These are graphs illustrating the measurement results of the line width in each of processes 51 to 54. Figure 23 The horizontal axis represents the amount of light exposure during the exposure process, and the vertical axis represents the linewidth. Curve PL51 represents the linewidth measurement result in process 51. Curve PL52 represents the linewidth measurement result in process 52. Curve PL53 represents the linewidth measurement result in process 53. Curve PL54 represents the linewidth measurement result in process 54.

[0192] Similar to other confirmed examples, curves PL52 and PL54 for processes 52 and 54, which include decompression and hydration treatments, shift to the upper left relative to curve PL51 for process 51, which does not include decompression and hydration treatments. No substantial difference was confirmed between curves PL52 and PL54. This result indicates that the order of decompression and hydration treatments with the first heating treatment does not affect the resistance of the exposed portion to the developing gas. Curve PL53 for process 53, which includes wafer W placement instead of decompression and hydration treatments, substantially overlaps with curve PL54 for process 54. This result indicates that the saturation of the characteristic change of the photosensitive coating RF when wafer W is placed in air after exposure is accelerated by decompression and hydration treatments.

[0193] [Variation Example]

[0194] Figure 24 This is a block diagram illustrating a modified example of the chip processing system 1. For example... Figure 24As shown, the wafer processing system 1 may further include a drying device 71. The drying device 71 dries the environment in which the heat treatment device 37 performs heat treatment of the photosensitive coated RF, compared to the hydration device 69 exposing the photosensitive coated RF to an environment containing moisture gas. Drying refers to reducing the amount of water per unit volume. Drying the environment can be achieved by either replacing the ambient gas with a dried gas to reduce the amount of water per unit volume, or by depressurizing the environment to reduce the amount of water per unit volume. For example, the drying device 71 could also be a gas supply device that replaces the gas in the environment where the heat treatment device 37 performs heat treatment of the photosensitive coated RF with an inert gas (e.g., N2 or Ar) or dry air. The drying device 71 could also be a depressurization device that reduces the amount of moisture per unit volume by depressurizing the environment in which the heat treatment device 37 performs heat treatment of the photosensitive coated RF.

[0195] The control device 100 may also include a drying control unit 121 as a functional block. The drying control unit 121 controls the drying device 71 to ensure that the photosensitive coated RF is dried by the heat treatment device 37 before it is heated by the heat treatment device 37 after the photosensitive coated RF has been exposed to a moisture-containing gas by the hydration device 69.

[0196] By drying the environment in which the photosensitive coated RF is heated, the aforementioned dehydration condensation can be promoted, for example. On the other hand, by drying the environment in which the photosensitive coated RF is heated, the ligands are less likely to be replaced by hydroxyl groups during the heating process. Therefore, if the ligands are not sufficiently replaced by hydroxyl groups before heating, the hydroxyl groups required for dehydration condensation are insufficient, and the dehydration condensation may become incomplete. In contrast, in the wafer processing system 1, depressurization and hydration treatments can be performed before heating, allowing the ligands to be sufficiently replaced by hydroxyl groups. Thus, heating under a depressurization, hydration, and drying environment can stabilize the degree of dehydration condensation occurring in the photosensitive coated RF.

[0197] Figure 25 This is a flowchart illustrating a modified example of the substrate processing flow. The modified substrate processing flow is similar to... Figure 17 The difference in the illustrated substrate processing flow is that, compared to the environment in which hydration is performed, heating (e.g., a second heating process) is carried out in a dry environment.

[0198] For example, such as Figure 25As shown, the wafer processing system 1 performs steps S31 to S35, which are the same as steps S11 to S15. Next, the wafer processing system 1 proceeds to step S36. In step S36, the drying control unit 121 controls the drying apparatus 71 so that the environment in which the heat treatment apparatus 37 performs the heat treatment of the photosensitive coated RF is exposed to a moisture-containing gas environment for drying, compared to the hydration apparatus 69. Next, the wafer processing system 1 performs steps S37 to S42, which are the same as steps S16 to S21.

[0199] (Example of confirmed effect)

[0200] In the following three substrate processing flows, multiple resist patterns are formed by varying the amount of light exposure during the exposure process, and the linewidth is measured. Processes 61 and 62 differ in the presence or absence of depressurization and hydration treatments. Processes 62 and 63 differ in whether a second heating treatment is performed in an environment where the gas has been replaced by an inert gas in the drying device 71.

[0201] Step 61) The following processes are performed sequentially: film formation, first heating treatment, second heating treatment, and dry development. In the film formation process, a negative metal resist film is formed at 26 nm. In the first heating treatment, the photosensitive coating RF is heated to 180°C and maintained at 180°C for 90 seconds. In the second heating treatment, the photosensitive coating RF is heated to 200°C and maintained at 200°C for 90 seconds.

[0202] Step 62) sequentially performs film formation, first heating treatment, depressurization treatment, hydration treatment, second heating treatment, and dry development treatment. In the film formation treatment, a negative metal resist film is formed at 26 nm. In the first heating treatment, the photosensitive coating RF is heated to 180°C and maintained at 180°C for 90 seconds. In the depressurization treatment, the pressure inside chamber 61 is reduced to 30 Pa and maintained at this pressure for 60 seconds. In the hydration treatment, air is supplied to chamber 61. In the second heating treatment, the photosensitive coating RF is heated to 200°C and maintained at 200°C for 90 seconds.

[0203] Process 63) sequentially performs film formation, first heating treatment, depressurization treatment, hydration treatment, second heating treatment, and dry development treatment. In the film formation treatment, a negative metal resist film is formed at 26 nm. In the first heating treatment, the photosensitive coating RF is heated to 180°C and maintained at 180°C for 90 seconds. In the depressurization treatment, the pressure in chamber 61 is reduced to 30 Pa and maintained at the reduced pressure for 60 seconds. In the hydration treatment, air is supplied to chamber 61. In the second heating treatment, the heat treatment apparatus 37 is purged with N2 gas, and the photosensitive coating RF is heated to 200°C and maintained at 200°C for 90 seconds.

[0204] Figure 26 This is a graph showing the measurement results of the line width for each of processes 61 to 63. Figure 26 The horizontal axis represents the amount of light exposure during the exposure process, and the vertical axis represents the linewidth. Curve PL61 represents the linewidth measurement result in process 61. Curve PL62 represents the linewidth measurement result in process 62. Curve PL63 represents the linewidth measurement result in process 63.

[0205] Curves PL62 and PL63 for processes 62 and 63, which include depressurization and hydration treatments, shift to the upper left relative to curve PL61 for process 61, which does not include depressurization and hydration treatments. Curve PL63 for process 63, which involves displacement to N2 gas in a second heating treatment, shifts further to the upper left relative to curve PL62 for process 62. This result indicates that the degree of dehydration condensation generated in the photosensitive coated RF is more stable through depressurization and hydration treatments and heating under a dry environment.

[0206] 〔Summarize〕

[0207] The embodiments illustrated above include the following structures.

[0208] (1) A substrate processing method, comprising: a step of forming a film by applying a photosensitive coating to the surface of a substrate; a step of placing the film-formed substrate in a first chamber 51 and exposing the photosensitive coating in the first chamber 51; a step of placing the film-formed substrate in a second chamber 61 different from the first chamber 51 and performing a decompression treatment to reduce the pressure in the second chamber 61; a step of exposing the photosensitive coating to a moisture-containing gas for hydration treatment after the decompression treatment and before the development treatment; and a step of developing the photosensitive coating of the exposed and hydrated substrate.

[0209] As noted in Patent Document 1, pattern deviations may occur due to variations in the time elapsed from the exposure apparatus until delivery to the developing apparatus 35. The inventors of this application have discovered that removable substances remain within the photosensitive coating, and the amount of these substances within the coating affects the pattern after developing. Hereinafter, this substance remaining within the coating will be referred to as "residual substance." For example, the amount of residual substance varies due to differences in the time elapsed from the exposure unit until delivery to the heating module, and this difference may cause pattern deviations. Alternatively, the delayed reaction progress due to residual substance may cause differences due to the aforementioned time variations, and this difference may also cause pattern deviations. In this substrate processing method, the substrate after film formation is placed in a second chamber 61, different from the first exposure chamber 51, and undergoes a decompression treatment to reduce pressure within the second chamber 61, followed by a hydration treatment. Afterward, the photosensitive coating of the substrate after exposure and hydration is developed. According to the decompression treatment, residual substances are forcibly reduced. Furthermore, due to the hydration treatment, the photosensitive coating is stable when residual substances are reduced. Therefore, the differences in the influence of residual substances between substrates after hydration treatment are reduced. This helps suppress pattern deviations between substrates. Additionally, within the photosensitive coating of a single substrate, the differences in the influence of residual substances caused by different locations are also reduced, thus suppressing pattern deviations within the same substrate. Since the necessity of ensuring consistent processing time from decompression treatment to the next treatment is reduced between substrates, the total processing time for each substrate can be prioritized, thereby achieving high efficiency in substrate processing.

[0210] (2) The substrate processing method according to (1), wherein a decompression process is performed after the exposure process.

[0211] The ligands that detach through exposure treatment will become the aforementioned residual substances.

[0212] By performing a decompression treatment after exposure, deviations in the amount of residual material containing detached ligands can be suppressed. Therefore, it is more effective in suppressing pattern deviations.

[0213] (3) According to the substrate processing method described in (2), the exposure processing is performed in a state where the first chamber 51 has been depressurized.

[0214] By depressurizing the first chamber 51, the effect of the exposure process on the photosensitive coating can be stabilized. On the other hand, due to the difference in the elapsed time from the exposure time to the discharge time from the first chamber 51, the amount of residual material may deviate. Such deviations in the amount of residual material can be reduced by depressurization after the exposure process. Therefore, it is possible to simultaneously stabilize the effect of the exposure process and suppress deviations in the amount of residual material.

[0215] (4) According to the substrate processing method described in (3), exposure processing is performed in the state of depressurizing the first chamber 51 to a first pressure, and in the depressurization processing, the second chamber 61 is depressurized to a second pressure higher than the first pressure.

[0216] This can reduce the cost of decompression processing. Additionally, achieving the initial pressure sometimes requires a long time. For example, exposure processing sometimes involves decompressing the vacuum to 1×10⁻⁶. -5 The pressure was reduced from near atmospheric pressure to 1 × 10 Pa. -5 Vacuum levels below Pa sometimes require tens of seconds or more. In contrast, by setting the pressure in the decompression process to a second pressure higher than the first pressure, the reduction in processing efficiency caused by the decompression process can be suppressed.

[0217] (5) The substrate processing method according to any one of (2) to (4), wherein the photosensitive coating is a metal resist film.

[0218] In negative metal resist films, residual substances tend to have a significant impact on the pattern. Therefore, depressurization treatment can further suppress pattern deviations.

[0219] (6) The substrate processing method according to any one of (2) to (5), wherein, in the decompression process, the second chamber 61 is decompressed to reduce the ligands that have been removed from the photosensitive coating by the exposure process.

[0220] It can further suppress the deviation in the amount of residual substances containing detached ligands.

[0221] (7) The substrate processing method according to any one of (2) to (6), wherein, in the hydration process, the photosensitive coating is exposed to a moisture-containing gas to replace the ligands that are released during the exposure process with hydroxyl groups.

[0222] It can improve the stability of the photosensitive coating after decompression treatment and further suppress pattern deviation.

[0223] (8) The substrate processing method according to any one of (2) to (7) further includes a step of performing a heat treatment for photosensitive coating after hydration treatment and before development treatment.

[0224] By supplementing the exposure process with heat treatment, energy conservation in the exposure process can be achieved. On the other hand, residual substances may also affect the effect of heat treatment. By reducing the pressure to suppress deviations in the amount of residual substances, and then by improving the stability of the photosensitive coating state through hydration treatment, deviations in the effect of heat treatment can also be suppressed.

[0225] (9) The substrate processing method according to (8) wherein the heating treatment is performed in an environment that is drier than the environment in which the hydration treatment is performed.

[0226] Heating in a dry environment can promote heat-based reactions such as dehydration condensation.

[0227] (10) The substrate processing method according to (8) or (9), wherein, in the hydration process, the photosensitive coating is exposed to a moisture-containing gas to replace the ligands detached by the exposure process with hydroxyl groups, and the photosensitive coating is subjected to a heat treatment to cause the molecules in which the ligands are replaced with hydroxyl groups to undergo dehydration condensation.

[0228] By reducing the pressure, the deviation in the amount of residual substances is suppressed, and then the ligands are replaced with hydroxyl groups by hydration treatment. This suppresses the deviation in the progress of dehydration condensation caused by heat treatment, and further suppresses the deviation in the pattern.

[0229] (11) The substrate processing method according to any one of (2) to (10), wherein the substrate processing method further comprises: performing a first heating treatment for photosensitive coating after exposure treatment and before decompression treatment; and performing a second heating treatment for photosensitive coating after hydration treatment and before development treatment.

[0230] By supplementing the exposure process with a second heating treatment, energy conservation in the exposure process can be achieved. On the other hand, residual substances may also affect the effectiveness of the second heating treatment. By performing a decompression treatment before the second heating treatment, deviations in the amount of residual substances can be suppressed. Furthermore, by performing a first heating treatment before the decompression treatment, deviations in the amount of residual substances can be further suppressed. By suppressing deviations in the amount of residual substances, deviations in the effectiveness of the second heating treatment can also be suppressed.

[0231] (12) According to the substrate processing method of (11), the second heating treatment is carried out in an environment that is drier than the environment in which the hydration treatment is performed.

[0232] By subjecting the product to heat treatment in a dry environment, reactions based on a second heat treatment, such as dehydration condensation, can be promoted.

[0233] (13) The substrate processing method according to (11) or (12), wherein in the first heating treatment, the substrate is heated to a first temperature, and in the second heating treatment, the substrate is heated to a second temperature higher than the first temperature.

[0234] After significantly reducing the amount of residual substances, heat energy can be effectively utilized by heating at high temperatures.

[0235] (14) The substrate processing method according to any one of (1) to (13), wherein the developing process is performed in a wet manner by supplying developing solution to the photosensitive coating.

[0236] It can suppress deviations in the solubility of the developer caused by variations in the amount of residual substances.

[0237] (15) The substrate processing method according to any one of (1) to (14), wherein the developing process is performed in a dry manner by supplying developing gas to the photosensitive coating.

[0238] It can suppress deviations in reactivity to developing gases caused by variations in the amount of residual substances.

[0239] (16) The substrate processing method according to any one of (1) to (15), wherein, in the decompression processing, the pressure in the second chamber 61 is maintained at the decompression pressure for a specified period or more.

[0240] The decompression process can further suppress the deviation in the amount of residual material between substrates and within a single substrate.

[0241] (17) A substrate processing apparatus comprising: a chamber 61 isolated from an exposure chamber 51 for receiving a substrate for exposure processing of a photosensitive coating formed on the surface of a substrate; a decompression device 68 for decompressing the chamber 61; a hydration device 69 for exposing the photosensitive coating to a moisture-containing gas; a transport device for transporting a substrate; a transport control unit 111 for controlling the transport device to deliver and remove a substrate from the chamber 61 after exposure processing of the photosensitive coating has been completed and before development processing of the photosensitive coating has been performed; a decompression control unit 115 for controlling the decompression device 68 to decompress the chamber 61 after the substrate is delivered into the chamber 61 and before the substrate is removed from the chamber 61; and a hydration control unit 116 for controlling the hydration device 69 to expose the photosensitive coating to a moisture-containing gas after decompression of the chamber 61.

[0242] (18) A substrate processing system comprising: a film forming apparatus 34 for forming a photosensitive coating on the surface of a substrate; a chamber 61 isolated from an exposure chamber 51 for housing the substrate for exposure processing of the photosensitive coating; a decompression apparatus 68 for decompressing the chamber 61; a hydration apparatus 69 for exposing the photosensitive coating to a moisture-containing gas; a developing apparatus 35 for developing the photosensitive coating; a transport device for transporting the substrate; and a transport control unit 111 for controlling the transport device. The apparatus includes a substrate that has undergone exposure treatment for photosensitive coating, which is fed into chamber 61 and then transported from chamber 61 to developing apparatus 35; a decompression control unit 115 that controls decompression device 68 to depressurize chamber 61 after it is fed into chamber 61 and before it is transported out of chamber 61; and a hydration control unit 116 that controls hydration device 69 to expose the photosensitive coating to moisture-containing gas after decompression in chamber 61 and before it is transported to developing apparatus 35.

[0243] (19) The substrate processing system according to (18) further includes a heat treatment device 37 for performing heat treatment of photosensitive coating, a transport control unit 111 controls a transport device to transport a substrate from chamber 61 to heat treatment device 37 and from heat treatment device 37 to developing device 35, and after being depressurized in chamber 61, before the substrate is transported to heat treatment device 37, a hydration control unit 116 controls a hydration device 69 to expose the photosensitive coating to a moisture-containing gas.

[0244] (20) The substrate processing system according to (19) further includes a drying device 71, which exposes the photosensitive coating to a moisture-containing gas environment for drying by the heat treatment device 37 performing the heat treatment of the photosensitive coating compared to the hydration device 69 performing the heat treatment of the photosensitive coating.

[0245] (21) A program that, when executed by a processor, causes a device to perform the substrate processing method according to any one of (1) to (16).

Claims

1. A method of processing a substrate, characterized by, Comprising: a step of performing a film formation process of a photosensitive coating film on a surface of a substrate; a step of housing the substrate on which the film formation process has been performed in a first chamber, and performing an exposure process of the photosensitive coating film in the first chamber; a step of housing the substrate on which the film formation process has been performed in a second chamber different from the first chamber, and performing a pressure reduction process of reducing the pressure in the second chamber; a step of performing a hydration process of exposing the photosensitive coating film to a moisture-containing gas after the pressure reduction process; and a step of performing a development process of the photosensitive coating film on the substrate on which the exposure process and the hydration process have been performed.

2. The substrate processing method according to claim 1, wherein: the pressure reduction process is performed after the exposure process.

3. The substrate processing method according to claim 2, wherein: the exposure process is performed in a state where the first chamber is reduced in pressure.

4. The substrate processing method according to claim 3, wherein: the exposure process is performed in a state where the first chamber is reduced in pressure to a first pressure, in the pressure reduction process, the second chamber is reduced in pressure to a second pressure higher than the first pressure.

5. The substrate processing method according to claim 2, wherein: the photosensitive coating film is a metal-containing resist film.

6. The substrate processing method according to any one of claims 2 to 5, wherein: in the pressure reduction process, the second chamber is reduced in pressure to remove a ligand that is detached from the photosensitive coating film by the exposure process.

7. The substrate processing method according to any one of claims 2 to 5, wherein: in the hydration process, the photosensitive coating film is exposed to the moisture-containing gas to replace a ligand that is detached by the exposure process with a hydroxyl group.

8. The substrate processing method according to any one of claims 2 to 5, further comprising: a step of performing a heating process of the photosensitive coating film after the hydration process and before the development process.

9. The substrate processing method according to claim 8, wherein: the heating process is performed in an environment that is drier than an environment in which the hydration process is performed.

10. The substrate processing method according to claim 8, wherein: in the hydration process, the photosensitive coating film is exposed to the moisture-containing gas to replace a ligand that is detached by the exposure process with a hydroxyl group, the heating process of the photosensitive coating film is performed to dehydrate and condense a molecule in which a ligand is replaced with a hydroxyl group. Further comprising:

11. The method for processing a substrate according to any one of claims 2 to 5, wherein a step of performing a first heating process of the photosensitive coating film after the exposure process and before the pressure reduction process; and a step of performing a second heating process of the photosensitive coating film after the hydration process and before the development process.

12. The substrate processing method according to claim 11, wherein: the second heating process is performed in an environment that is drier than an environment in which the hydration process is performed.

13. The substrate processing method according to claim 11, wherein: ​ ​ In the first heating process, the substrate is heated to a first temperature, In the second heating process, the substrate is heated to a second temperature higher than the first temperature.

14. The substrate processing method according to any one of claims 1 to 5, wherein: the developing process is performed in a wet type in which a developing liquid is supplied to the photosensitive coating film.

15. The substrate processing method according to any one of claims 1 to 5, wherein: the developing process is performed in a dry type in which a developing gas is supplied to the photosensitive coating film.

16. The substrate processing method according to any one of claims 1 to 5, wherein: in the pressure reduction process, the pressure in the second chamber is maintained at a reduced pressure for a prescribed period or more.

17. A substrate processing apparatus, characterized by, comprises: a chamber which is isolated from an exposure chamber in which the substrate is housed for an exposure process on a photosensitive coating film formed on a surface of the substrate; a pressure reduction device which reduces the pressure in the chamber; a hydration device which performs a hydration process in which the photosensitive coating film is exposed to a moisture-containing gas; a conveyance device which conveys the substrate; a conveyance control section which controls the conveyance device to deliver the substrate into the chamber after the exposure process on the photosensitive coating film is completed and before a developing process on the photosensitive coating film is performed, and to deliver the substrate out of the chamber; a pressure reduction control section which controls the pressure reduction device to reduce the pressure in the chamber after the substrate is delivered into the chamber and before the substrate is delivered out of the chamber; and a hydration control section which controls the hydration device to expose the photosensitive coating film to the moisture-containing gas after the pressure in the chamber is reduced. comprises:

18. A substrate processing system, comprising: the substrate processing apparatus according to claim 17; and a developing processing device which performs a developing process on the photosensitive coating film, the conveyance control section controls the conveyance device to convey the substrate on which the hydration process is completed to the developing processing device.

19. The substrate processing system according to claim 18, further comprising: a heat processing device which performs a heat process on the photosensitive coating film, the conveyance control section controls the conveyance device to convey the substrate delivered out of the chamber to the heat processing device and to convey the substrate from the heat processing device to the developing processing device, the hydration control section controls the hydration device to expose the photosensitive coating film to the moisture-containing gas after the pressure in the chamber is reduced and before the substrate is conveyed to the heat processing device.

20. The substrate processing system according to claim 19, further comprising: a drying device which dries an environment in which the heat processing device performs the heat process on the photosensitive coating film, compared to an environment in which the hydration device exposes the photosensitive coating film to the moisture-containing gas. The computer program, when executed by a processor, causes an apparatus to perform a substrate processing method, the substrate processing method comprising: a film formation process in which a photosensitive coating film is formed on a surface of a substrate; 21. A program product comprising a computer program, characterized in that ​ ​ a step of performing a pressure reduction process of reducing the pressure in the chamber in which the substrate is housed, the chamber being isolated from an exposure chamber in which the substrate is housed for an exposure process of the photosensitive coating film; after the pressure reduction process, a hydration process of exposing the photosensitive coating film to a moisture-containing gas; and a development process of the photosensitive coating film of the substrate after the exposure process and the hydration process.

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