High-pressure jet deburring equipment for processing probe monocrystalline silicon tip

Abstract

The invention relates to the technical field of monocrystalline silicon probes, and discloses a high-pressure jet deburring device for processing a monocrystalline silicon tip of a probe, the high-pressure jet deburring device comprises an operation main body, the operation main body comprises a cleaning box body, the cleaning box body is slidably connected with a mechanical arm through a slide rail arranged in the cleaning box body, and the terminal of the mechanical arm is connected with a spray gun. The cleaning device is used for cleaning external silicon wafers. According to the high-pressure jet flow deburring equipment for machining the single crystal silicon tip of the probe, the problems that in the prior art, when the surface of the probe is finely scoured and cleaned, high-speed water flow impacts the surface of a silicon wafer to generate large counter-acting force, the silicon wafer shakes or shifts under the impact of water flow, and due to the shaking, washing is not uniform, and the working efficiency is high can be effectively solved. The problems that in the prior art, a part of the area cannot be fully cleaned, a silicon wafer collides with other parts in equipment, the surface of the silicon wafer is scratched or other physical damage is caused, and the yield of the monocrystalline silicon needle point probe is reduced are solved.

Description

Technical Field

[0001] This invention relates to the field of single-crystal silicon probe technology, and specifically to a high-pressure jet deburring device for processing single-crystal silicon probe tips. Background Technology

[0002] Monocrystalline silicon probe tips are primarily made of monocrystalline silicon, which possesses excellent mechanical properties and chemical stability, making it an ideal material for probe fabrication. Probes with monocrystalline silicon tips are typically manufactured using etching methods on wafer-like silicon sheets. Anisotropic self-stopping etching is employed to create microprobe structures with regular shapes and well-tapered ends. After etching, the probe structure's surface still exhibits some minor roughness, etching inhomogeneities, or residual impurities at the microscopic level. These require high-pressure jet equipment to utilize high-speed flowing liquid or gas jets for meticulous rinsing and cleaning of the probe surface to remove these microscopic defects and reduce surface roughness.

[0003] In existing technologies, when the probe surface is finely rinsed and cleaned, the high-speed water flow impacts the silicon wafer surface and generates a large reaction force. The silicon wafer will shake or shift under the impact of the water flow. This shaking not only leads to uneven rinsing and some areas cannot be fully cleaned, but also causes the silicon wafer to collide with other components inside the equipment, resulting in scratches or other physical damage to the silicon wafer surface, which reduces the yield of monocrystalline silicon tip probes. Summary of the Invention

[0004] To address the aforementioned shortcomings of existing technologies, this invention provides a high-pressure jet deburring device for processing single-crystal silicon probe tips. This device effectively solves the problem in existing technologies where, during fine rinsing and cleaning of the probe surface, the high-speed water flow impacts the silicon wafer surface, generating a large reaction force. This causes the silicon wafer to shake or shift under the impact of the water flow. Such shaking not only leads to uneven rinsing and insufficient cleaning of some areas, but also causes the silicon wafer to collide with other components inside the device, resulting in scratches or other physical damage to the silicon wafer surface and reducing the yield of single-crystal silicon probe tips.

[0005] To achieve the above objectives, the present invention provides the following technical solution:

[0006] This invention provides a high-pressure jet deburring device for processing single-crystal silicon probe tips, comprising:

[0007] The operating body includes a cleaning tank body, and a robotic arm is slidably connected to the cleaning tank body via a slide rail set inside it. The end of the robotic arm is connected to a spray gun for cleaning external silicon wafers.

[0008] The placement part includes a base, the bottom of which is slidably connected to the upper surface of a slide rail. A boss is fixedly connected to the upper surface of the base. A placement block is rotatably connected to the boss through an annular cavity opened on its side near the spray gun. The placement block is provided with a fixing member for placing an external silicon wafer through a receiving cavity opened inside it.

[0009] The fixing member includes a clamping plate that is slidably connected to the inside of the receiving cavity. The boss has an output shaft inside, and the output end of the output shaft extends into the inside of the receiving cavity and is fixedly connected to a toothed ring. A stabilizing member is provided on the side of the clamping plate near the spray gun.

[0010] Furthermore, the outer surface of the clamping plate is fixedly connected with a toothed bar that meshes with the outer surface of the toothed ring. Four toothed bars are arranged in an array along the circumference of the toothed ring. A reinforcing plate is provided on the side of the clamping plate near the toothed ring and fixedly connected to the outer side of the toothed bar.

[0011] Furthermore, the side of the clamping plate near the toothed ring adopts an arc surface design that fits into the outer circumferential surface of the external silicon wafer.

[0012] Furthermore, the stabilizer includes a connecting rod that is slidably connected to the inside of the clamping plate, and a pressure plate is fixedly connected to the side of the connecting rod away from the boss.

[0013] Furthermore, the connecting rod extends to the outer surface of the placement block on the side near the boss and is fixedly connected to a limiting ring plate. The limiting ring plate is provided with a spring connected to the outer surface of the placement block on the side near the pressure plate.

[0014] Furthermore, the placement block is provided with a connecting ring fixedly connected to the outer surface of the output shaft on the side near the boss, and a shift fork that fits against the outer surface of the connecting rod is fixedly connected to the outer circumference of the connecting ring, and a limit fork is fixedly connected to the inner wall of the annular cavity on the side near the placement block.

[0015] Furthermore, a gear is rotatably connected inside the receiving cavity, and a shaft that is damped and rotatably connected inside the placement block is fixedly connected to the side of the gear near the pressure plate. The end of the shaft away from the gear passes through the placement block and is fixedly connected to a shaped roller. A rack that meshes with the outer surface of the gear is fixedly connected to the side of the clamping plate away from the gear.

[0016] Furthermore, an elastic element is fixedly connected to the side of the pressure plate near the clamping plate.

[0017] The technical solution provided by this invention has the following advantages compared with the prior art:

[0018] This invention incorporates fixing and stabilizing components. Through a cross-distribution design of two sets of racks in the horizontal and vertical directions, coupled with the rotational drive of the gear ring, four clamping plates move synchronously towards the center, creating a uniform clamping force on the outer circumference of the silicon wafer and ensuring accurate center positioning. During the clamping process, the pressure plate, under the action of a spring, moves towards the placement block through the cooperation of irregularly shaped rollers, racks, and gears. This causes the elastic element near the connecting rod of the pressure plate to come into close contact with the outer surface of the silicon wafer and undergo a certain deformation. This provides pressure to the silicon wafer, stabilizing its placement and maintaining a relatively stationary state with the placement block, while also protecting the brittle silicon wafer through deformation buffering. Simultaneously, the high-pressure jet direction is perpendicular to the outer surface of the silicon wafer. During cleaning, the water flow exerts a force on the silicon wafer towards the placement block, further ensuring the stability of the wafer placement and preventing collisions with other internal components, thus avoiding scratches or other physical damage to the wafer surface and improving the yield of the monocrystalline silicon tip probe. Attached Figure Description

[0019] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the accompanying drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are merely some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without any creative effort.

[0020] Figure 1 This is a three-dimensional structural schematic diagram of an embodiment of the present invention;

[0021] Figure 2 This is a schematic diagram of the structure of the block and boss in an embodiment of the present invention;

[0022] Figure 3 This is a schematic diagram of the separation structure of the placement block and the boss in an embodiment of the present invention;

[0023] Figure 4 This is a schematic diagram of the structure of the fixing component and the output shaft according to an embodiment of the present invention;

[0024] Figure 5 This is a cross-sectional structural diagram of the clamping plate according to an embodiment of the present invention;

[0025] Figure 6 This is a schematic cross-sectional view of the connecting rod and clamping plate according to an embodiment of the present invention;

[0026] Figure 7 This is a schematic diagram of the structure of the stabilizer, rack, and irregularly shaped roller in an embodiment of the present invention;

[0027] Figure 8 This is a schematic diagram of the structure of the placement block and the connecting ring according to an embodiment of the present invention;

[0028] Figure 9 This is a schematic diagram of the separation structure of the clamping plate, pressure plate, and irregular roller in an embodiment of the present invention.

[0029] The labels in the diagram represent: 1. Operating body; 11. Cleaning tank body; 12. Slide rail; 13. Robotic arm; 14. Spray gun; 2. Placement part; 21. Base; 22. Boss; 221. Annular cavity; 222. Output shaft; 23. Placement block; 231. Receiving cavity; 24. Fixing component; 241. Clamping plate; 242. Gear ring; 243. Gear rack; 244. Reinforcing plate; 25. Stabilizing component; 251. Connecting rod; 252. Pressure plate; 253. Limiting ring plate; 254. Spring; 255. Connecting ring; 2551. Shift fork; 256. Limiting fork; 26. Gear; 261. Irregular roller; 262. Rack. Detailed Implementation

[0030] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention.

[0031] The present invention will be further described below with reference to embodiments.

[0032] Example:

[0033] Please see Figures 1-9 This invention provides a technical solution: a high-pressure jet deburring device for processing single-crystal silicon probe tips, comprising:

[0034] The operating body 1 includes a cleaning tank body 11. The cleaning tank body 11 is slidably connected to a robotic arm 13 via a slide rail 12 located inside it. The end of the robotic arm 13 is connected to a spray gun 14 for cleaning external silicon wafers.

[0035] The placement part 2 includes a base 21. The bottom of the base 21 is slidably connected to the upper surface of the slide rail 12. A boss 22 is fixedly connected to the upper surface of the base 21. The boss 22 is rotatably connected to a placement block 23 through an annular cavity 221 opened on the side of the boss near the spray gun 14. The placement block 23 is provided with a fixing member 24 for placing an external silicon wafer through a receiving cavity 231 opened inside it. When the thickness and size of the silicon wafer to be cleaned change, the base 21 can be driven by the slide rail 12 to adjust the distance between the spray gun 14 and the silicon wafer, thereby adjusting the punching pressure.

[0036] The fixing member 24 includes a clamping plate 241 that is slidably connected to the inside of the receiving cavity 231. The boss 22 is provided with an output shaft 222 inside, and the output end of the output shaft 222 extends into the inside of the receiving cavity 231 and is fixedly connected with a toothed ring 242. A stabilizing member 25 is provided on the side of the clamping plate 241 near the spray gun 14. The thickness of the silicon wafer to be processed is greater than the thickness of the clamping plate 241 extending to the outer surface of the placement block 23.

[0037] A toothed bar 243, which meshes with the outer surface of the toothed ring 242, is fixedly connected to the outer surface of the clamping plate 241. Four toothed bars 243 are arranged in an array along the circumference of the toothed ring 242. A reinforcing plate 244, which is fixedly connected to the outer side of the toothed bar 243, is provided on the side of the clamping plate 241 near the central axis of the placement block 23. Sealing plates are fixed on both the side of the clamping plate 241 near the central axis of the placement block 23 and the side of the clamping plate 241 away from the central axis of the placement block 23, adopting a sealing structure design to isolate the interior of the receiving cavity 231 from the exterior.

[0038] The side of the clamping plate 241 near the toothed ring 242 adopts an arc surface design that fits into the outer circumferential surface of the external silicon wafer.

[0039] The stabilizer 25 includes a connecting rod 251 that is slidably connected to the inside of the clamping plates 241 on both horizontal sides. A pressure plate 252 is fixedly connected to the side of the connecting rod 251 away from the boss 22. Fixed baffles are fixedly connected to the outer surfaces of the clamping plates 241 located on the upper and lower sides of the toothed ring 242. There are two fixed baffles and two clamping plates 241. The fixed baffles and clamping plates 241 are staggered and the included angle between the fixed baffles and clamping plates 241 is ninety degrees.

[0040] The connecting rod 251 extends to the outer surface of the placement block 23 near the boss 22 and is fixedly connected to the limiting ring plate 253. The limiting ring plate 253 is provided with a spring 254 connected to the outer surface of the placement block 23 on the side near the pressure plate 252.

[0041] The placement block 23 is provided with a connecting ring 255 fixedly connected to the outer surface of the output shaft 222 on the side near the boss 22. The outer circumference of the connecting ring 255 is fixedly connected to a shift fork 2551 that fits against the outer surface of the connecting rod 251. The inner wall of the annular cavity 221 is fixedly connected to a limit fork 256 on the side near the placement block 23.

[0042] The cavity 231 is rotatably connected to a gear 26. The side of the gear 26 near the pressure plate 252 is fixedly connected to a shaft that is rotatably connected to the inside of the placement block 23. The end of the shaft away from the gear 26 passes through the placement block 23 and is fixedly connected to a shaped roller 261. The side of the clamping plate 241 away from the rack 243 is fixedly connected to a rack 262 that meshes with the outer surface of the gear 26.

[0043] An elastic element is fixedly connected to the side of the pressure plate 252 near the clamping plate 241. The outer surface of the placement block 23 near the pressure plate 252 is designed with a flexible material, which can fill the gap between the silicon wafer and the outer surface of the placement block 23 caused by the slight unevenness of the outer surface, and avoid the reciprocating swing caused by the gap during the subsequent jetting process.

[0044] Monocrystalline silicon raw materials initially exist in the form of cylindrical silicon ingots. This is because, during the manufacturing process, molten silicon is rotated and gradually drawn into a cylindrical structure within a quartz pot. When manufacturing monocrystalline silicon probe tips, multiple regularly shaped microprobe structures with well-tapered ends are created on the outer surface of a diced silicon wafer using an anisotropic self-stopping etching method. After photolithography, etching, and other steps are completed, the silicon wafer needs to be cleaned.

[0045] Pressure plates 252 are slidably connected to the outer surfaces of the clamping plates 241 on the left and right sides of the toothed ring 242 via connecting rods 251. Fixed baffles are fixedly connected to the outer surfaces of the clamping plates 241 on the upper and lower sides of the toothed ring 242. The fixed baffles are L-shaped and form a whole with the clamping plates 241 on the upper and lower sides. The fixed baffles extend to a relatively thick distance from the outer surface of the placement block 23, providing support. The fixed baffles and pressure plates 252 are staggered, and the included angle between the fixed baffles and pressure plates 252 is ninety degrees. The inner circumference of the annular cavity 221 is provided with a bearing seat that connects to the outer surface of the placement block 23, and the placement block 23 is rotatably connected to the interior of the annular cavity 221.

[0046] The process of loading silicon wafers:

[0047] In the initial state, all four clamping plates 241 are located on the side furthest from the toothed ring 242 within their stroke range, and the circumferential area enclosed by the arc surfaces of the four clamping plates 241 is relatively large. The thickness of the irregular roller 261 is designed to gradually change, with the thickest side being the thickest and the thinnest side being the thinnest. At this time, the side of the irregular roller 261 with the thicker thickness is located between the clamping plate 241 and the pressure plate 252. The distance between the clamping plates 241 and the pressure plate 252 on the left and right sides of the toothed ring 242 is relatively large. Correspondingly, the connecting rod 251 moves as a whole towards the spray gun 14. The limiting ring plate 253, which is fixedly connected to the outer surface of the connecting rod 251, is also located on the side closer to the spray gun 14. The spring 254 is in a compressed state, and the outer circumferential surface of the connecting rod 251 near the boss 22 does not contact the outer surface of the shift fork 2551.

[0048] Using a robotic arm or manual feeding method, the etched silicon wafer with a needle-like structure on its outer surface is placed on the outer surface of the placement block 23. At this time, the radius of the silicon wafer is smaller than the radius of the circle formed by the arc surfaces of the four clamping plates 241. The silicon wafer smoothly enters between the four clamping plates 241. At this time, the bottom of the outer circumference of the silicon wafer is in contact with the arc surface of the clamping plate 241 located below.

[0049] The process of cleaning and deburring silicon wafers:

[0050] The drive device inside the boss 22 drives the output shaft 222 to rotate, and the gear ring 242 and connecting ring 255 rotate together. The limiting fork 256 is fixedly connected to the inner wall of the annular cavity 221 and to the boss 22. At this time, the connecting rod 251 enters the interior of the limiting fork 256, and the connecting rod 251 and the limiting fork 256 are combined into a whole. Under the action of the two, the boss 22 and the placement block 23 form a whole. The boss 22 and the placement block 23 are relatively stationary. When the output shaft 222 rotates, the gear ring 242 at its outer end rotates synchronously, and drives the four toothed rods 243 that mesh with its outer surface to slide inside the receiving cavity 231. The toothed rods 243 can be divided into horizontal groups and vertical groups. The toothed rods 243 in the horizontal group are located on the left and right sides of the gear ring 242, and this group of toothed rods 243 is closer to the boss 22. The toothed rods 243 in the vertical group are located on the upper and lower sides of the gear ring 242, and this group of toothed rods 243 is away from the boss 22. The outer surfaces of the vertical group of toothed rods 243 and the horizontal group of toothed rods 243 are in contact, and the two groups of toothed rods 243 are distributed in an intersecting manner so as not to interfere with each other and to prevent collisions.

[0051] When the output shaft 222 rotates clockwise, the toothed bar 243, reinforcing plate 244, and clamping plate 241 on the left side move to the right, while the toothed bar 243, reinforcing plate 244, and clamping plate 241 on the right side move to the left. The toothed bar 243, reinforcing plate 244, and clamping plate 241 on the upper side move downwards, and the toothed bar 243, reinforcing plate 244, and clamping plate 241 on the lower side move upwards. The four toothed bars 243 move synchronously towards the central silicon wafer, and the silicon wafer is placed above the clamping plate 241 on the lower side. Following the clamping plate 241, the silicon wafer moves upwards, and the distance between the arc surfaces of the four clamping plates 241 and the outer circumference of the silicon wafer gradually decreases until the arc surfaces of the clamping plates 241 are completely in contact with the outer circumference of the silicon wafer.

[0052] During the clamping process of the silicon wafer by the clamping plate 241, the horizontal rack 243 and the clamping plate 241 gradually move closer to the central gear ring 242. The irregular roller 261 is connected to the placement block 23 by a shaft with damping rotation. The irregular roller 261 follows the position of the placement block 23 and remains stationary. The distance between the clamping plate 241 and the irregular roller 261 gradually increases or decreases. Taking the clamping plate 241 on the right as an example, when it moves to the left, the rack 262, which is fixedly connected to its outer surface, also moves to the left accordingly. At this time, the gear 26 meshing with the outer surface of the rack 262 remains stationary. The gear 26 rotates under the influence of the rack 262. The irregular roller 261 is fixedly connected to the gear 26 by a shaft, and the irregular roller 261 rotates synchronously with the gear 26. Its outer surface gradually changes from the thickest side located between the pressure plate 252 and the clamping plate 241 to the thinnest side located between the pressure plate 252 and the clamping plate 241. At the same time, the pressure plate 252 and the clamping plate 241 are horizontally displaced, and the distance between the clamping plate 241 and the irregular roller 261 increases.

[0053] After the addition, the pressure plate 252 and the clamping plate 241 are no longer affected by the irregular roller 261. Under the action of the spring 254, the distance between the clamping plate 241 and the limiting ring plate 253 gradually increases. The spring 254 gradually recovers its elastic potential energy, and the connecting rod 251 moves as a whole towards the boss 22. Correspondingly, the pressure plate 252 also moves towards the boss 22. The distance between the side of the pressure plate 252 near the connecting rod 251 and the silicon wafer gradually decreases until the elastic element set on the side of the pressure plate 252 near the connecting rod 251 is in close contact with the outer surface of the silicon wafer and undergoes a certain deformation. (The spring 254 adopts a strong design with a large elastic force. The elastic element can be made of rubber, which is soft and can deform to a certain extent as the elastic potential energy of the spring 254 recovers. The elastic element and the spring 254 work together to give pressure to the silicon wafer and avoid excessive pressure that could cause the silicon wafer to break.)

[0054] The outer surface of the placement block 23 near the spray gun 14 is also designed with a flexible material to fill the gap between the silicon wafer and the outer surface of the placement block 23 caused by the slight unevenness of the outer surface, thus avoiding the reciprocating oscillation caused by the gap during the subsequent jetting process. At this time, the silicon wafer has been pressed onto the outer surface of the placement block 23, and the smooth side of the silicon wafer is completely in contact with the outer surface of the placement block 23.

[0055] The end of the connecting rod 251 away from the pressure plate 252 moves towards the boss 22 and towards the axis of the output shaft 222 until its outer end disengages from the interior of the limiting fork 256 (the boss 22 and the placement block 23 are no longer in a single unit) and enters the interior of the two adjacent shift forks 2551 on the outer surface of the connecting ring 255, and the outer circumferential surface of the connecting rod 251 contacts the outer circumferential surface of the connecting ring 255.

[0056] As the output shaft 222 rotates clockwise, the connecting ring 255 fixed on the outer circumference of the output shaft 222 also rotates counterclockwise. Since the connecting rod 251 enters the interior of two adjacent shift forks 2551, the shift forks 2551 are in an inclined state. The side of the shift fork 2551 with the smaller angle with the outer surface of the connecting ring 255 contacts the outer circumference of the connecting rod 251. The rotation of the shift fork 2551 will drive the connecting rod 251 to rotate. The connecting rod 251 is inside the placement block 23. At this time, through the connection relationship between the connecting rod 251 and the shift fork 2551, the output shaft 222 and the placement block 23 are formed as a whole. The output shaft 222 starts to drive the entire placement block 23 and the silicon wafer on its outer surface to rotate clockwise inside the annular cavity 221. At the same time, the robotic arm 13 drives the spray gun 14 to perform vertical jet cleaning on the side of the silicon wafer containing the needle tip structure, removing the residual etching liquid and impurities on the outer surface of the silicon wafer, further refining the needle tip structure, and finely removing the burrs on the outer surface.

[0057] The spray gun 14 performs vertical jet cleaning on the side of the silicon wafer containing the needle-like structure. This jet direction allows the rinsing fluid to directly act on the needle-like structure of the silicon wafer, maximizing the cleaning power of the high-pressure jet and effectively removing impurities from the needle-like surface and surrounding area. Simultaneously, the vertical jet avoids unnecessary shearing forces generated by the rinsing fluid on the needle-like structure, reducing lateral impacts and helping to protect the shape and integrity of the needle-like structure. Meanwhile, in the stabilizing component 25, the pressure plate 252, through spring 254, firmly holds the silicon wafer against the outer surface of the placement block 23. The flexible material design of the outer surface of the placement block 23 prevents breakage caused by the back-and-forth vibration of the silicon wafer during jetting, improving the yield of probe processing.

[0058] The output shaft 222 rotates at a relatively slow speed. The placement block 23 drives the silicon wafer to rotate while bearing the jet. The rotation of the silicon wafer allows the high-pressure jet to act evenly on the entire outer surface of the silicon wafer. Because the etched silicon wafer has a needle-like structure and a complex surface morphology, if it does not rotate, some areas may be blocked by the needle tips, preventing the rinsing fluid from fully contacting and rinsing these areas. However, by rotating around the axis, all parts of the silicon wafer have the opportunity to be fully exposed to the jet, thus ensuring that the entire outer surface of the silicon wafer is uniformly rinsed, effectively removing residual etchant, reaction byproducts, and microparticles and other impurities from the surface.

[0059] The process of cutting silicon wafers:

[0060] After the output shaft 222 rotates the placement block 23 180 degrees, it stops, completing the microscopic cleaning and deburring of the silicon wafer. At this time, the output shaft 222 rotates counterclockwise, and the outer surface of the connecting rod 251 contacts the side of the shift fork 2551 with a larger tilt angle. Under the action of the shift fork 2551, the entire connecting rod 251 moves away from the toothed ring 242. At this time, the output shaft 222 and the placement block 23 no longer form a whole. Under the action of the shift fork 2551, the connecting rod 251 enters the interior of the limiting fork 256. At this time, the boss 22 forms a whole with the placement block 23 again. The placement block 23 no longer rotates and remains stationary inside the annular cavity 221. At this time, the counterclockwise rotation of the output shaft 222 drives the toothed ring 242 to rotate counterclockwise. Under the action of the toothed ring 242, the four toothed rods 243 slide inside the receiving cavity 231. At this time, a robotic arm is used to support the silicon wafer.

[0061] The upper rack 243 and clamping plate 241 move upwards, the lower rack 243 and clamping plate 241 move downwards, the left rack 243 and clamping plate 241 move to the left, and the right rack 243 and clamping plate 241 move to the right. Taking the right rack 243 and clamping plate 241 as an example, when the clamping plate 241 moves to the right, the rack 262 fixedly connected to the right side of the clamping plate 241 also moves synchronously. During the movement, the rack 262 meshes with the outer surface of the gear 26 and drives the irregular roller 261 to rotate 180 degrees.

[0062] Initially, the thinner side of the irregularly shaped roller 261 is close to the pressure plate 252, and the thinner side of the irregularly shaped roller 261 smoothly enters between the clamping plate 241 and the pressure plate 252. As the distance between the irregularly shaped roller 261 and the clamping plate 241 gradually decreases, the rack 262 continuously drives the gear 26 to rotate. The irregularly shaped roller 261 gradually changes from being positioned between the clamping plate 241 and the pressure plate 252 with its thinner side, to being positioned between the clamping plate 241 and the pressure plate 252 with its thicker side. The gap between the clamping plate 241 and the pressure plate 252 increases as the thickness of the irregularly shaped roller 261 increases, until it returns to its initial state. At this point, the cleaned silicon wafer is no longer tightly attached to the outer surface of the placement block 23, and the diameter of the circle formed by the arc surfaces of the four clamping plates 241 is larger than the diameter of the silicon wafer, facilitating the smooth unloading of the silicon wafer.

[0063] In summary, the placement part 2 of the present invention has the following advantages:

[0064] Advantage 1: Through the cross-distribution design of the horizontal and vertical toothed rods 243, combined with the rotational drive of the toothed ring 242, the four clamping plates 241 move synchronously towards the center, forming a uniform clamping force on the outer circumference of the silicon wafer, ensuring the positioning accuracy of the silicon wafer's center. During the clamping process of the silicon wafer by the clamping plates 241, through the cooperation of structures such as the irregular rollers 261, racks 262, and gears 26, the pressure plate 252 can move towards the placement block 23 under the action of the spring 254, causing the elastic element set on the side of the pressure plate 252 near the connecting rod 251 to be in close contact with the outer surface of the silicon wafer and undergo a certain deformation. This not only applies pressure to the silicon wafer, making it stable and maintaining a relatively stationary state with the placement block 23, but also protects the brittle silicon wafer through deformation buffering. The high-pressure jet direction is perpendicular to the outer surface of the silicon wafer. During the cleaning process, the water flow will give the silicon wafer a force to move towards the placement block 23, further ensuring the stability of the silicon wafer.

[0065] Advantage 2: When the connecting rod 251 and the limiting fork 256 are combined, the boss 22 and the placement block 23 form a whole, realizing the clamping and releasing of the external silicon wafer; after the connecting rod 251 enters the shift fork 2551, the output shaft 222 separates from the placement block 23. When the output shaft 222 rotates, it drives the placement block 23 and the silicon wafer to rotate synchronously, ensuring that the jet of the spray gun 14 covers the entire surface of the silicon wafer, eliminating dead corners, and is especially suitable for the comprehensive cleaning of complex needle tip arrays; realizing independent control of silicon wafer rotation and clamping action.

[0066] Thirdly, the spray gun 14 performs vertical jet cleaning on the side of the silicon wafer containing the needle-like structure. The jet direction allows the rinsing fluid to directly act on the needle-like structure of the silicon wafer, maximizing the cleaning power of the high-pressure jet and effectively removing impurities from the surface and surrounding areas of the needle-like structure. Simultaneously, it avoids unnecessary shearing forces generated by the rinsing fluid on the needle-like structure, reducing lateral impacts and protecting the shape and integrity of the needle-like structure. During the uniform rinsing of the silicon wafer, the output shaft 222 drives the placement block 23 and the entire silicon wafer to rotate while bearing the jet. This ensures that the high-pressure jet acts evenly on the entire outer surface of the silicon wafer, preventing areas where the needle-like structure on the silicon wafer surface are blocked, thus ensuring that the entire outer surface of the silicon wafer is uniformly rinsed. This effectively removes residual etchant, reaction byproducts, and microparticles from the surface. Furthermore, the vertical placement of the silicon wafer facilitates the smooth flow of the rinsing fluid, reducing residue.

[0067] Fourthly, the gradually thickened irregularly shaped roller 261 rotates via a rack 262 and gear 26, adjusting the distance between the clamping plate 241 and the pressure plate 252 to achieve stepless adjustment of the clamping force. When the irregularly shaped roller 261 changes from the thick side to the thin side, the spring 254 releases its potential energy, and the elastic element (rubber or silicone) flexibly presses the silicon wafer, avoiding rigid impact. The irregularly shaped roller 261 can automatically adjust the distance between the pressure plates 252 when the clamping plate 241 moves: during loading, the thick end of the irregularly shaped roller 261 opens the pressure plate 252, leaving space for the silicon wafer to be placed; during clamping, the thin end of the irregularly shaped roller 261 retracts, releasing the pressure of the spring 254 so that the pressure plate 252 is tightly attached to the silicon wafer. During loading and unloading, dynamic switching between loosening and clamping is achieved, avoiding errors caused by manual intervention.

[0068] Fifthly, after the output shaft 222 rotates clockwise, driving the placement block 23 to rotate 180 degrees, it then rotates counterclockwise. The connecting rod 251 inside the placement block 23, under the action of the inclined fork 2551, enters the interior of the limiting fork 256. The outer surface of the limiting fork 256 features a tapered chamfer design to facilitate the smooth entry of the connecting rod 251. The limiting fork 256 is horizontally designed, ensuring that the connecting rod 251 accurately enters the limiting fork 256 after each 180-degree rotation of the placement block 23. This process achieves precise calibration of the placement block 23, avoiding the gradual increase in errors caused by repeated rotations, thus ensuring the stability and accuracy of the entire device's operation.

[0069] The above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions will not cause the essence of the corresponding technical solutions to deviate from the protection scope of the technical solutions of the embodiments of the present invention.

Claims

1. A high-pressure jet deburring device for processing single-crystal silicon probe tips, characterized in that, include: The operating body (1) includes a cleaning tank body (11), which is slidably connected to a robotic arm (13) via a slide rail (12) inside it, and the end of the robotic arm (13) is connected to a spray gun (14) for cleaning external silicon wafers. The placement part (2) includes a base (21), the bottom of which is slidably connected to the upper surface of the slide rail (12), and a boss (22) is fixedly connected to the upper surface of the base (21). The boss (22) is rotatably connected to a placement block (23) through an annular cavity (221) opened on its side near the spray gun (14). The placement block (23) is provided with a fixing member (24) for placing an external silicon wafer through a receiving cavity (231) opened inside it. The fixing member (24) includes a clamping plate (241) that is slidably connected to the inside of the receiving cavity (231). The boss (22) is provided with an output shaft (222), and the output end of the output shaft (222) extends into the inside of the receiving cavity (231) and is fixedly connected with a toothed ring (242). A stabilizing member (25) is provided on the side of the clamping plate (241) near the spray gun (14).

2. The high-pressure jet deburring equipment for processing single-crystal silicon probe tips according to claim 1, characterized in that: The outer surface of the clamping plate (241) is fixedly connected to a toothed bar (243) that meshes with the outer surface of the toothed ring (242). There are four toothed bars (243) arranged in an array along the circumference of the toothed ring (242). A reinforcing plate (244) is fixedly connected to the outer side of the toothed bar (243) on the side of the clamping plate (241) near the toothed ring (242).

3. The high-pressure jet deburring equipment for processing single-crystal silicon probe tips according to claim 2, characterized in that: The side of the clamping plate (241) near the toothed ring (242) adopts an arc surface design that fits with the outer circumferential surface of the external silicon wafer.

4. The high-pressure jet deburring equipment for processing single-crystal silicon probe tips according to claim 3, characterized in that: The stabilizer (25) includes a connecting rod (251) that is slidably connected to the inside of the clamping plate (241), and a pressure plate (252) is fixedly connected to the side of the connecting rod (251) away from the boss (22).

5. The high-pressure jet deburring equipment for processing single-crystal silicon probe tips according to claim 4, characterized in that: The connecting rod (251) extends to the outer surface of the placement block (23) near the boss (22) and is fixedly connected to the limiting ring plate (253). The limiting ring plate (253) is provided with a spring (254) connected to the outer surface of the placement block (23) on the side near the pressure plate (252).

6. The high-pressure jet deburring equipment for processing single-crystal silicon probe tips according to claim 5, characterized in that: The placement block (23) is provided with a connecting ring (255) fixedly connected to the outer surface of the output shaft (222) on the side near the boss (22). The outer circumferential surface of the connecting ring (255) is fixedly connected with a shift fork (2551) that fits against the outer surface of the connecting rod (251). The inner wall of the annular cavity (221) is fixedly connected with a limit fork (256) on the side near the placement block (23).

7. The high-pressure jet deburring equipment for processing single-crystal silicon probe tips according to claim 6, characterized in that: The cavity (231) is rotatably connected to a gear (26). The gear (26) is fixedly connected to a shaft that is damped and rotatably connected to the inside of the placement block (23) on the side near the pressure plate (252). The end of the shaft away from the gear (26) passes through the placement block (23) and is fixedly connected to a shaped roller (261). The clamping plate (241) is fixedly connected to a rack (262) that meshes with the outer surface of the gear (26) on the side away from the rack (243).

8. The high-pressure jet deburring equipment for processing single-crystal silicon probe tips according to claim 6, characterized in that: The pressure plate (252) is fixedly connected to an elastic element on the side near the clamping plate (241).

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