Semiconductor growth apparatus

Abstract

The invention discloses semiconductor growth equipment, which comprises a substrate carrier with a groove structure in the middle of the bottom surface; a rotating device; an internal rotating shaft; the external rotating shaft is movably arranged outside the internal rotating shaft in a sleeving mode, the top of the external rotating shaft is matched with the groove structure, the rotating device is connected with the external rotating shaft so as to drive the substrate carrier to rotate, and the internal rotating shaft extends and is arranged in the rotating device so as to be in a static state in the movement process of the external rotating shaft; the shaft heating device is arranged on the inner rotating shaft, a gap is formed between the shaft heating device and the outer rotating shaft, and the shaft heating device comprises a shaft heating element; and the external power supply device is electrically connected with the shaft heating device through the internal rotating shaft so as to supply energy to the shaft heating element. According to the invention, the shaft heating device can be arranged through the rotating shaft for heating compensation, and in the rotating process of the rotating shaft, the shaft heating device does not generate motion interference with the rotating shaft part driving the substrate carrier to rotate, so that the surface temperature of the substrate carrier is uniform.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor equipment, in particular to a semiconductor growth equipment. BACKGROUND

[0002] In the semiconductor manufacturing process, for example, a metal-organic chemical vapor deposition (MOCVD) equipment is used to grow a semiconductor material layer on the surface of a substrate. A heating device is located below a susceptor. The substrate temperature is controlled by heating the susceptor and heat transfer from the susceptor to the substrate carried by the susceptor.

[0003] As shown in the prior art, Figure 6 The heating device A provides heat for the susceptor B. The rotating shaft C of the rotating device is rotationally connected to the susceptor B. The rotating shaft C has an absorption effect on the heat of the susceptor B, which causes the surface temperature of the susceptor B to be non-uniform. That is, the actual temperature distribution D of the surface of the susceptor B shows a downward trend in the middle region compared with the ideal temperature distribution E. In addition, in order to ensure the service life of the rotating shaft C, a corresponding cooling device is generally provided for the rotating shaft C of the rotating device, which further aggravates the absorption effect of the heat on the susceptor B, causing the surface temperature of the susceptor B to be non-uniform.

[0004] Therefore, it is necessary to provide a new semiconductor growth equipment to solve the above problems in the prior art. SUMMARY

[0005] The technical problem to be solved by the present application is how to provide a semiconductor growth equipment which can compensate for heating by providing a shaft heating device, and the shaft heating device does not interfere with the movement of the rotating shaft part driving the substrate carrier to rotate, so as to make the surface temperature of the substrate carrier uniform.

[0006] To solve the above technical problem, according to an embodiment of the present application, a semiconductor growth equipment is provided, comprising: a substrate carrier, a groove structure is arranged in the middle of the bottom surface of the substrate carrier; a rotating device; an inner rotating shaft; an outer rotating shaft movably arranged outside the inner rotating shaft, the top of the outer rotating shaft is matched with the groove structure, the rotating device is connected to the outer rotating shaft to drive the substrate carrier to rotate, and the inner rotating shaft is extended and arranged in the rotating device to be in a stationary state during the movement of the outer rotating shaft; a shaft heating device arranged between the inner rotating shaft and the outer rotating shaft with a spacing, the shaft heating device comprising a shaft heating element arranged at the top of the inner rotating shaft and surrounded by the groove structure; An external power supply device is electrically connected to the shaft heating device through the internal rotating shaft to supply power to the shaft heating element.

[0007] By adopting the technical scheme, the internal rotating shaft and the external rotating shaft are arranged, the external rotating shaft is matched with the groove structure, and the substrate carrier can be driven to rotate when the external rotating shaft rotates; meanwhile, the external rotating shaft is sleeved on the internal rotating shaft, the internal rotating shaft is in a static state during the movement of the substrate carrier driven by the external rotating shaft, that is, the internal rotating shaft does not interfere with the rotation of the external rotating shaft; the shaft heating element is arranged at the top of the internal rotating shaft, the shaft heating element is surrounded by the groove structure, the position of the groove structure can be heated, that is, the middle part of the substrate carrier can be heated, so that the temperature of the middle part of the substrate carrier and the temperature of the area other than the middle part are uniform, the uniformity of the temperature of the substrate carrier is improved, and the substrate carrying area of the substrate carrier is expanded; meanwhile, the internal rotating shaft is in a static state when the external rotating shaft rotates, and the external power supply device is electrically connected to the shaft heating device through the internal rotating shaft to supply power to the shaft heating element, so that the circuit for electrically connecting the shaft heating device and the external power supply device does not rotate with the external rotating shaft during the rotation of the external rotating shaft, thereby avoiding the winding of the circuit due to the rotation of the external rotating shaft.

[0008] According to the embodiments of the present application, the top of the external rotating shaft comprises a rotating shaft protruding section, the rotating shaft protruding section and the groove structure are both frustoconical, the outer side wall of the rotating shaft protruding section and the inner side wall of the groove structure are both inclined to the central axis of the substrate carrier and expand away from the top surface of the substrate carrier, and part of the outer side wall of the rotating shaft protruding section is fitted with part of the inner side wall of the groove structure.

[0009] According to the embodiments of the present application, the top of the external rotating shaft comprises a rotating shaft protruding section, the rotating shaft protruding section and the groove structure are both frustoconical, the outer side wall of the rotating shaft protruding section and the inner side wall of the groove structure are both inclined to the central axis of the substrate carrier and expand away from the top surface of the substrate carrier, and part of the outer side wall of the rotating shaft protruding section is fitted with part of the inner side wall of the groove structure.

[0010] According to the embodiments of the present application, the top of the external rotating shaft comprises a rotating shaft protruding section, the rotating shaft protruding section and the groove structure are both frustoconical, the outer side wall of the rotating shaft protruding section and the inner side wall of the groove structure are both inclined to the central axis of the substrate carrier and expand away from the top surface of the substrate carrier, and part of the outer side wall of the rotating shaft protruding section is fitted with part of the inner side wall of the groove structure.

[0011] According to the embodiments of the present application, the top of the internal rotating shaft comprises an internal rotating shaft protruding section, the internal rotating shaft protruding section is frustoconical, the outer side wall is inclined to the central axis of the substrate carrier and expands away from the top surface of the substrate carrier, the shaft heating element is arranged on the exposed surface of the internal rotating shaft protruding section, and the shaft heating element is spaced apart from the rotating shaft protruding section.

[0012] According to the embodiments of the present application, the groove structure, the external rotating shaft and the internal rotating shaft are all axisymmetric structures, and the central axes of the groove structure, the external rotating shaft and the internal rotating shaft are all coincident with the central axis of the substrate carrier.

[0013] According to an embodiment of this application, the top of the outer rotating shaft includes a rotating shaft protrusion section, and the top of the inner rotating shaft includes an inner rotating shaft protrusion portion, wherein the rotating shaft protrusion section and the inner rotating shaft protrusion portion have the same contour shape.

[0014] According to an embodiment of this application, the top of the inner rotating shaft includes an inner rotating shaft protrusion, the shaft heating element is disposed on the surface of the inner rotating shaft protrusion and has a gap with the outer rotating shaft.

[0015] According to an embodiment of this application, the arrangement density of the shaft heating elements disposed on the top surface of the inner rotating shaft protrusion is: The density of the shaft heating element located on the side wall of the inner rotating shaft protrusion is... ,in, = ,or > .

[0016] According to an embodiment of this application, the distance between the shaft heating element located on the top surface of the inner rotating shaft protrusion and the bottom wall of the groove structure is... The distance between the shaft heating element located on the side wall of the inner rotating shaft protrusion and the side wall of the groove structure is... ,in, = .

[0017] According to an embodiment of this application, the inner rotating shaft further includes an inner rotating shaft extension section connected to the protruding portion of the inner rotating shaft, and the shaft heating element is also disposed on the side wall of the inner rotating shaft extension section.

[0018] According to an embodiment of this application, the internal rotating shaft is an insulated rotating shaft or a conductive rotating shaft, the conductor is disposed on the internal rotating shaft, and the shaft heating device further includes a conductor whose two ends are respectively electrically connected to the shaft heating element and the external power supply device; When the internal rotating shaft is a conductive rotating shaft, the shaft heating device further includes an insulating structure, and the shaft heating element and the conductor are electrically insulated from the internal rotating shaft through the insulating structure.

[0019] According to an embodiment of this application, it also includes a process chamber, and the rotating device includes a fixed base plate and a rotating sealing assembly dynamically sealed on the top of the fixed base plate; The rotary sealing assembly is connected to the external rotating shaft and is dynamically sealed within the process chamber; The internal rotating shaft extends into the rotary sealing assembly and is fixedly mounted on the fixed base plate. Attached Figure Description

[0020] Figure 1This is a schematic diagram of the cooperation method between an external rotating shaft and a groove structure according to an embodiment of the present invention.

[0021] Figure 2 This is a schematic diagram of another way in which the rotating shaft and the groove structure are fitted together according to an embodiment of the present invention.

[0022] Figure 3 This is a schematic diagram of another way in which the rotating shaft and the groove structure are fitted together according to an embodiment of the present invention.

[0023] Figure 4 This is a schematic diagram of a shaft heating element and the distribution of conductors within the internal rotating shaft, according to an embodiment of the present invention.

[0024] Figure 5 This is a schematic diagram showing the installation position of a rotating device according to an embodiment of the present invention.

[0025] Figure 6 This is a schematic diagram of the cooperation between a substrate carrier and a rotating shaft in a prior art as mentioned in an embodiment of the present invention; wherein A is a heating device; B is a base; C is a rotating shaft; D is the actual temperature distribution on the surface of the base; and E is the ideal temperature distribution on the surface of the base.

[0026] Figure label: 100. Substrate carrier; 101. Groove structure; 200. Rotating device; 210. Fixed base plate; 220. Rotary sealing assembly; 221. Rotating sleeve; 222. Drive mechanism; 223. Sealing sleeve; 300. External rotating shaft; 310. Rotating shaft protrusion; 400. Internal rotating shaft; 410. Internal rotating shaft protrusion; 420. Internal rotating shaft extension; 500. Shaft heating device; 510. Shaft heating element; 520. Conductor; 600. Base heating device; 700. Process chamber bottom wall. Detailed Implementation

[0027] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed after the word and its equivalents, but does not exclude other elements or objects.

[0028] The following is combined Figures 1-6The specific embodiments of the present invention will be further described in detail below.

[0029] Embodiments of the present invention provide a semiconductor growth apparatus, wherein the semiconductor apparatus includes, but is not limited to, a chemical vapor deposition (CVD) apparatus, or a physical vapor deposition (PVD) apparatus. The chemical vapor deposition apparatus may be a plasma-enhanced chemical vapor deposition (PECVD) apparatus, a metal-organic chemical vapor deposition (MOCVD) apparatus, etc. This embodiment uses an MOCVD apparatus as an example for illustration. It should be understood that this apparatus is merely exemplary, and the present invention is not limited to this type of apparatus.

[0030] The semiconductor growth apparatus of this embodiment includes a substrate carrier 100, and a groove structure 101 is provided on the bottom surface; Rotating device 200; Internal pivot 400; An external rotating shaft 300 is movably fitted outside the internal rotating shaft 400. The top of the external rotating shaft 300 is adapted to the groove structure 101. The rotating device 200 is connected to the external rotating shaft 300 to drive the substrate carrier 100 to rotate. The internal rotating shaft 400 extends and is located inside the rotating device 200 so that it remains stationary during the movement of the external rotating shaft 300. A shaft heating device 500 is disposed on an inner rotating shaft 400 and has a gap between it and an outer rotating shaft 300. The shaft heating device 500 includes a shaft heating element 510 disposed on the top of the inner rotating shaft 400 and surrounded by a groove structure 101. An external power supply device supplies power to the shaft heating element 510 via an internal rotating shaft 400 electrically connected to the shaft heating device 500.

[0031] In some embodiments, reference is made to Figure 1 and Figure 5 The substrate carrier 100 is used to support the substrate, and the groove structure 101 is disposed in the middle of the bottom surface of the substrate carrier 100.

[0032] In some embodiments, the external rotating shaft 300 is adapted to the groove structure 101, thereby connecting the external rotating shaft 300 to the substrate carrier 100. At the same time, the rotating device 200 can drive the external rotating shaft 300 to rotate, thereby driving the substrate carrier 100 to rotate; that is, the rotating device 200 is activated, and the substrate carrier 100 is driven to rotate through the external rotating shaft 300.

[0033] In some embodiments, the semiconductor growth apparatus further includes an internal rotating shaft 400, and an external rotating shaft 300 is movably fitted onto the internal rotating shaft 400; the internal rotating shaft 400 is disposed on the rotating device 200 and its position is fixed, so that the internal rotating shaft 400 remains stationary during the rotation of the external rotating shaft 300, and the internal rotating shaft 400 does not interfere with the rotation process of the external rotating shaft 300.

[0034] In some specific embodiments, reference is made to Figure 4 The semiconductor device also includes a shaft heating device 500, which is disposed on an inner rotating shaft 400 and has a gap between it and the inner wall of an outer rotating shaft 300. Specifically, the shaft heating device 500 includes a shaft heating element 510, which is disposed on top of the inner rotating shaft 400 and surrounded by a groove structure 101. The shaft heating element 510 is also spaced from the inner wall of the outer rotating shaft 300. The shaft heating element 510 is used to heat the substrate carrier 100. To facilitate the heating of the shaft heating element 510, an external power supply device is also provided. The external power supply device is electrically connected to the shaft heating device 500 through the inner rotating shaft 400 to supply power to the shaft heating element 510, thereby enabling the shaft heating element 510 to heat the substrate carrier 100. The external power supply device is well known to those skilled in the art and will not be described in detail here.

[0035] In some specific embodiments, the inner rotating shaft 400 is used to mount the shaft heating element 510. The rotation of the inner rotating shaft 400 and the outer rotating shaft 300 are independent of each other, which can avoid the problem of wire winding of the shaft heating element 510 caused by the synchronous rotation of the shaft heating element 510 with the substrate carrier 100.

[0036] In some embodiments, reference is made to Figure 1 , Figure 2 and Figure 3The top of the outer rotating shaft 300 includes a rotating shaft protrusion 310. Both the rotating shaft protrusion 310 and the groove structure 101 are frustoconical. The outer sidewall of the rotating shaft protrusion 310 and the inner sidewall of the groove structure 101 are inclined to the central axis of the substrate carrier 100 and expand in a direction away from the top surface of the substrate carrier 100. A portion of the outer sidewall of the rotating shaft protrusion 310 and a portion of the inner sidewall of the groove structure 101 are attached to each other so that the outer rotating shaft 300 drives the substrate carrier 100 to rotate under the drive of the rotating device 200. In some specific embodiments, this attachment refers to a tight attachment. Specifically, the top of the outer rotating shaft 300 includes a rotating shaft protrusion 310; the rotating shaft protrusion 310 is frustoconical, and the outer sidewall of the rotating shaft protrusion 310 is inclined to the central axis of the substrate carrier 100 and expands in a direction away from the top surface of the substrate carrier 100. Meanwhile, the shape of the groove structure 101 is the same as that of the rotating shaft protrusion 310, also being frustoconical. The inner wall of the groove structure 101 is inclined to the central axis of the substrate carrier 100 and expands in a direction away from the top surface of the substrate carrier 100. Furthermore, in order for the external rotating shaft 300 to drive the substrate carrier 100 to rotate, the expansion angle of the outer wall of the rotating shaft protrusion 310 is different from the expansion angle of the inner wall of the groove structure 101, so that at least a portion of the outer wall of the rotating shaft protrusion 310 can contact the inner wall of the groove structure 101. This contact can be a portion of the top of the rotating shaft protrusion 310. The outer sidewall of the rotating shaft 300 is attached to a portion of the inner sidewall at the top of the groove structure 101, or a portion of the outer sidewall at the bottom of the rotating shaft protrusion 310 is attached to a portion of the inner sidewall at the bottom of the groove structure 101, or all the outer sidewalls of the rotating shaft protrusion 310 are attached to all the inner sidewalls of the groove structure 101, so that the outer rotating shaft 300 can drive the substrate carrier 100 to rotate when it rotates; or the outer sidewall of the rotating shaft protrusion 310 is parallel to the inner sidewall of the groove structure 101, and a portion of the outer sidewall of the rotating shaft protrusion 310 is attached to the inner sidewall of the groove structure 101; the specific connection method will be described later.

[0037] In some specific embodiments, the frustum shape is a truncated cone shape.

[0038] In some embodiments, the shaft heating element 510 is a resistance wire, which is coiled on the protruding section 310 of the rotating shaft. The selection of the resistance wire and the winding density can be flexibly adjusted according to the heating requirements. The specific setting method is a conventional technique in the art.

[0039] In some embodiments, there is a gap between the top surface of the rotating shaft protrusion 310 and the bottom wall of the groove structure 101. Considering the need for better rotational stability for high-speed rotation control, and the fact that both the substrate carrier 100 and the external rotating shaft 300 will undergo thermal expansion at high temperatures, in some embodiments, at least a portion of the sidewall of the rotating shaft protrusion 310 is in contact with at least a portion of the sidewall of the groove structure 101, and there is a gap between the top surface of the rotating shaft protrusion 310 and the bottom wall of the groove structure 101, thereby reserving space for thermal expansion and avoiding damage to the substrate carrier 100 and / or the external rotating shaft 300 due to thermal expansion caused by high temperatures.

[0040] In some embodiments, the top surface of the rotating shaft protrusion 310 is abutted against the bottom wall of the groove structure 101 so that the outer rotating shaft 300 drives the substrate carrier 100 to rotate under the drive of the rotating device 200. The abutment between the side walls of the rotating shaft protrusion 310 and the groove structure 101 achieves radial positioning and can effectively transmit torque through mutual friction, ensuring rotational stability. The abutment between the top surface of the rotating shaft protrusion 310 and the bottom wall of the groove structure 101 allows the rotating shaft protrusion 310 to support the substrate carrier 100. This concave-convex fit is suitable for applications with relatively low rotational speeds and / or heavy loads on the substrate carrier 100. Specifically, the outer side wall of the rotating shaft protrusion 310 includes a top side wall connected to the bottom wall of the groove structure 101 and a bottom side wall connected to the bottom surface of the substrate carrier 100. The top side wall is abutted against the corresponding inner side wall of the groove structure 101, and there is a gap between the bottom side wall and the corresponding inner side wall of the groove structure 101.

[0041] In some specific embodiments, when there is a gap between the top surface of the rotating shaft protrusion 310 and the bottom wall of the groove structure 101, that is, when there is a gap between the top sidewall and the bottom wall of the groove structure 101, the relationship between the bottom sidewall and the inner wall of the groove structure 101 can be that the top of the bottom sidewall is in contact with the inner wall of the groove structure 101, and the bottom of the bottom sidewall is spaced from the inner wall of the groove structure 101; or the bottom of the bottom sidewall is in contact with the inner wall of the groove structure 101, and the top of the bottom sidewall is spaced from the inner wall of the groove structure 101; or both the bottom and top of the bottom sidewall are in contact with the inner wall of the groove structure 101, so that the outer rotating shaft 300 can drive the substrate carrier 100 to rotate when it rotates.

[0042] In some specific embodiments, when the top surface of the rotating shaft protrusion 310 is in contact with the bottom wall of the groove structure 101, that is, when the top sidewall is in contact with the bottom wall of the groove structure 101, the relationship between the bottom sidewall and the inner wall of the groove structure 101 can be such that the top and bottom of the bottom sidewall are spaced apart from the inner wall of the groove structure 101, and the space between the top wall of the bottom sidewall and the inner wall of the groove structure 101 is smaller than the space between the bottom of the bottom sidewall and the inner wall of the groove structure 101; or the bottom of the bottom sidewall is in contact with the inner wall of the groove structure 101, and the top of the bottom sidewall is spaced apart from the inner wall of the groove structure 101, in which case the top sidewall is in contact with part of the bottom wall of the groove structure 101; or the bottom and top of the bottom sidewall are both in contact with the inner wall of the groove structure 101, so that the outer rotating shaft 300 can drive the substrate carrier 100 to rotate when it rotates.

[0043] In some embodiments, the top of the inner rotating shaft 400 includes an inner rotating shaft protrusion 410, and a shaft heating element 510 is disposed on the surface of the inner rotating shaft protrusion 410, with a gap between it and the outer rotating shaft 300 to avoid the shaft heating element 510 being squeezed and deformed, thus affecting the heating zone control effect. The inner rotating shaft protrusion 410 can be planar, arc-shaped, or frustum-shaped, and the shaft heating element 510 is disposed on the surface of the inner rotating shaft protrusion 410 to heat the substrate carrier 100. Simultaneously, the gap between the shaft heating element 510 and the outer rotating shaft 300 reduces the possibility of localized temperature increases due to contact between the shaft heating element 510 and the rotating shaft protrusion 310.

[0044] In some embodiments, the top of the inner rotating shaft 400 includes an inner rotating shaft protrusion 410, which is frustoconical in shape. Its outer sidewalls are inclined to the central axis of the substrate carrier 100 and expand in a direction away from the top surface of the substrate carrier 100. A shaft heating element 510 is disposed on the exposed surface of the inner rotating shaft protrusion 410 and is spaced from the rotating shaft protrusion 310. Specifically, the inner rotating shaft protrusion 410 is frustoconical, and the shaft heating element 510 is disposed on the exposed surface of the inner rotating shaft protrusion 410, i.e., on the sidewalls and top wall of the frustoconical inner rotating shaft protrusion 410, to facilitate the heating process of the substrate carrier 100 by the shaft heating element 510. Simultaneously, the space between the shaft heating element 510 and the rotating shaft protrusion 310 reduces the possibility of localized temperature increases due to contact between the shaft heating element 510 and the rotating shaft protrusion 310.

[0045] In some specific embodiments, the selection, height, and arrangement (e.g., coil density distribution) of the axial heating element 510 at the top of the inner rotating shaft 400 are related to the contour shape of its surface and the distance between the surface and the groove structure 101. The heat transfer from the outer rotating shaft 300 to the corresponding area of ​​the substrate carrier 100 is also related to its contour shape. The top of the outer rotating shaft 300 includes a rotating shaft protrusion section 310, and the top of the inner rotating shaft 400 includes an inner rotating shaft protrusion portion 410. The rotating shaft protrusion section 310 and the inner rotating shaft protrusion portion 410 have the same contour shape, thereby improving the universality of the outer rotating shaft 300. For different substrate carriers 100 with the same groove structure 101, if the heating requirements are different, it is only necessary to consider changing the arrangement of the axial heating element 510 on its surface.

[0046] In some embodiments, the expansion angle of the outer sidewall of the inner rotating shaft protrusion 410 is the same as the expansion angle of the inner sidewall of the groove structure 101, but different from the expansion angle of the bottom sidewall of the rotating shaft protrusion 310, that is, the outer sidewall of the inner rotating shaft protrusion 410 is parallel to the inner sidewall of the groove structure 101.

[0047] In some specific embodiments, the distance between the shaft heating element 510 located on the top surface of the inner rotating shaft protrusion 410 and the bottom wall of the groove structure 101 is... The distance between the shaft heating element 510 located on the side wall of the inner rotating shaft protrusion 410 and the side wall of the groove structure 101 is... ,in, = Specifically, when = At the same time, the distances from the heating elements 510 of each axis to the heated surfaces of the substrate carrier 100 are equal, thereby improving the temperature uniformity during the heating process and enhancing the versatility of the external rotating shaft 300. In some embodiments, the groove structure 101, the outer rotating shaft 300, and the inner rotating shaft 400 are all axisymmetric structures, and their respective central axes coincide with the central axis of the substrate carrier 100. Specifically, the groove structure 101, the outer rotating shaft 300, and the inner rotating shaft 400 are all axisymmetric structures, and the central axes of the groove structure 101, the inner rotating shaft 400, and the outer rotating shaft 300 coincide with each other; that is, the groove structure 101, the inner rotating shaft 400, and the outer rotating shaft 300 are coaxially arranged to enhance the stability of the rotating shaft driving the substrate carrier 100 to rotate, and at the same time to improve the temperature uniformity of the heating element 510 at the top of the inner rotating shaft 400 on the substrate carrier 100.

[0048] In some embodiments, the arrangement density of the shaft heating elements 510 disposed on the top surface of the inner rotating shaft protrusion 410 is: The density of the shaft heating element 510 located on the side wall of the inner rotating shaft protrusion 410 is... ,in, = ,or > .

[0049] In some specific embodiments, when > At the same time, it can achieve rapid heat accumulation and heating of the protruding part of the shaft, raising the temperature of the middle part; the shaft heating element 510 can quickly transfer heat to the center of the substrate carrier 100, shortening the heating time and improving production efficiency.

[0050] In some specific embodiments, when = When the density of the shaft heating elements 510 is the same in all areas, the heating power of the shaft heating elements 510 in each area and the heating power of the base heating device 600 can be reasonably adjusted to ensure that the top surface of the substrate carrier 100 meets the process temperature range, thereby simplifying the design and debugging of the temperature control system. Because the shaft heating elements 510 are evenly distributed, a more uniform heating effect can be provided, reducing temperature deviations caused by uneven distribution of the shaft heating elements 510 and ensuring consistent temperature distribution throughout the base.

[0051] In some embodiments, reference is made to Figure 4 The inner rotating shaft 400 also includes an inner rotating shaft extension 420 that connects to the inner rotating shaft protrusion 410, and the shaft heating element 510 is also disposed on the side wall of the inner rotating shaft extension 420. Specifically, the inner rotating shaft extension 420 extends to the rotating device 200 and is fixed to the rotating device 200 so that the inner rotating shaft protrusion 410 is fixed, thereby keeping the inner rotating shaft 400 stationary when the outer rotating shaft 300 rotates.

[0052] In some embodiments, the internal shaft 400 is an insulated shaft or a conductive shaft, and the conductor 520 is disposed on the internal shaft 400. The shaft heating device 500 also includes a conductor 520 whose two ends are electrically connected to the shaft heating element 510 and the external power supply device, respectively. When the internal rotating shaft 400 is a conductive rotating shaft, the shaft heating device 500 also includes an insulating structure, and the shaft heating element 510 and the conductor 520 are electrically insulated from the internal rotating shaft 400 through the insulating structure.

[0053] In some specific embodiments, conductor 520 can be a wire or other conductive structure, which is not limited here. The main purpose is to electrically connect the shaft heating element 510 and the external power supply device, so that the external power supply device can supply power to the shaft heating element 510 through conductor 520. At the same time, in order to facilitate the external power supply device to supply power to the shaft heating element 510, the internal rotating shaft 400 is set as an insulated rotating shaft, such as an internal rotating shaft 400 made of ceramic material or other materials with insulating capabilities. There is no limitation here, as long as it does not affect the external power supply device to supply power to the shaft heating element 510. More specifically, the conductor 520 is disposed in the inner rotating shaft 400, which can be disposed inside the inner rotating shaft 400 or on the surface of the inner rotating shaft 400. It is worth noting that when the conductor 520 is disposed on the surface of the inner rotating shaft 400, it is necessary to maintain an appropriate distance between the conductor 520 and the inner wall of the outer rotating shaft 300 so that the outer rotating shaft 300 does not interfere with the power supply of the external power supply device to the shaft heating element 510; or an insulating structure is provided between the conductor 520 and the inner wall of the outer rotating shaft 300 so that the outer rotating shaft 300 does not interfere with the power supply of the external power supply device to the shaft heating element 510.

[0054] In some embodiments, when the inner shaft 400 is a conductive shaft, the shaft heating device 500 further includes an insulating structure and a conductor 520 whose two ends are electrically connected to the shaft heating element 510 and the external power supply device, respectively. Specifically, the inner shaft 400 is a conductive shaft, the conductor 520 is disposed in the inner shaft 400, and the shaft heating element 510 and the conductor 520 are electrically insulated from the inner shaft 400 by the insulating structure. Specifically, in addition to the case where the inner shaft 400 is an insulated shaft as described above, the inner shaft 400 can also be configured as a conductive shaft, such as an inner shaft 400 made of molybdenum material, or an inner shaft 400 made of other conductive materials. When the inner shaft 400 is a conductive shaft, the shaft heating device 500 further includes an insulating structure and a conductor 520 whose two ends are electrically connected to the shaft heating element 510 and the external power supply device, respectively. The shaft heating element 510 and the conductor 520 are electrically insulated from the inner shaft 400 by the insulating structure. Furthermore, the conductor 520 can be disposed inside the inner shaft 400 or on the surface of the outer shaft 300. More specifically, when the conductor 520 is disposed inside the inner rotating shaft 400, the insulating structure can be an insulating tube, which covers the conductor 520, preventing contact between the conductor 520 and the inner rotating shaft 400, thus ensuring that the inner rotating shaft 400 does not interfere with the power supply of the external power supply device to the shaft heating element 510; when the conductor 520 is disposed on the surface of the inner rotating shaft 400, the insulating structure can be an insulating tube or an insulating block; when the insulating structure is an insulating tube, it covers the conductor 520, preventing contact between the conductor 520 and the inner rotating shaft 400. There will be no contact, so that the internal rotating shaft 400 will not interfere with the power supply of the external power supply device to the shaft heating element 510; when the insulation structure is an insulating block (e.g., a ceramic bracket), the insulating block is placed between the internal rotating shaft 400 and the conductor 520 so that the two will not come into contact. At the same time, it is necessary to ensure that there is an appropriate gap between the conductor 520 and the inner wall of the external rotating shaft 300, or an insulating block is also placed between the conductor 520 and the inner wall of the external rotating shaft 300 so that the external rotating shaft 300 will not interfere with the power supply of the external power supply device to the shaft heating element 510.

[0055] In some embodiments, reference is made to Figure 1 and Figure 5 The semiconductor growth equipment also includes a process chamber, and the rotating device 200 includes a fixed base plate 210 and a rotating sealing assembly 220 with a dynamic seal disposed on the top of the fixed base plate 210. The rotary sealing assembly 220 is connected to the external rotating shaft 300 and is dynamically sealed in the process chamber; The internal rotating shaft 400 extends into the rotary sealing assembly 220 and is fixedly mounted on the fixed base plate 210.

[0056] In some specific embodiments, the substrate carrier 100, the rotating shaft protrusion 310, and the inner rotating shaft protrusion 410 are all located inside the process chamber; the rotating device 200 includes a fixed base plate 210 and a rotating sealing assembly 220 dynamically sealed on the top of the fixed base plate 210; wherein, the rotating sealing assembly 220 is also dynamically sealed on the bottom wall 700 of the process chamber, and the rotating sealing assembly 220 is connected to the external rotating shaft 300. The rotating sealing assembly 220 can drive the external rotating shaft 300 to rotate, and while the rotating sealing assembly 220 drives the external rotating shaft 300 to rotate, the fixed base plate 210 and the process chamber remain stationary; that is, the rotating sealing assembly 220 can drive the external rotating shaft 300 to rotate relative to the process chamber and the fixed base plate 210. Specifically, the rotary sealing assembly 220 includes a cylindrical drive cylinder and a drive motor for rotating the drive cylinder. The drive motor drives the drive cylinder to rotate the external rotating shaft 300 relative to the process chamber and the fixed base plate 210. The transmission method between the drive motor and the drive cylinder is well known to those skilled in the art and will not be described in detail here. More specifically, the internal rotating shaft 400 extends into the drive cylinder and is fixedly mounted on the fixed base plate 210, with a gap between the internal rotating shaft 400 and the inner wall of the drive cylinder. The fixing method between the internal rotating shaft 400 and the fixed base plate 210 can be adhesive, snap-fit, or bolted, etc., without limitation, with the main consideration being that the internal rotating shaft 400 will not rotate on the fixed base plate 210, thereby preventing the internal rotating shaft 400 from interfering with the rotation of the external rotating shaft 300.

[0057] In some embodiments, reference is made to Figure 5 The rotary sealing assembly 220 includes a rotary sleeve 221, a drive mechanism 222, and a sealing sleeve 223. The rotary sleeve 221 is hollow, with one end connected to an external rotating shaft 300 to drive the external rotating shaft 300 to rotate. The drive mechanism 222 is connected to the side wall of the rotary sleeve 221 to provide driving force. An internal rotating shaft 400 passes through the rotary sleeve 221 and connects to a fixed base plate 210. The sealing sleeve 223 is located on the bottom wall 700 of the process chamber, and is fitted onto the rotary sleeve 221 in a dynamic sealing manner to strengthen the dynamic sealing relationship between the rotary sleeve 221 and the bottom wall 700 of the process chamber.

[0058] In some embodiments, the semiconductor growth apparatus further includes a base heating device 600 disposed below the bottom surface of the substrate carrier 100 and surrounding the external rotating shaft 300. The base heating device 600 and the shaft heating device 500 cooperate to heat the substrate carrier 100. Specifically, through their cooperation, the temperature of the area corresponding to the junction of the rotating shaft and the substrate carrier 100 is made uniform with other areas, so that the middle part of the substrate carrier 100 can support the substrate, thereby increasing production capacity.

[0059] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the invention as set forth in the claims. Furthermore, the invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. A semiconductor growth apparatus, characterized in that, include: The substrate carrier has a groove structure in the middle of its bottom surface; Rotating device; Internal pivot; An external rotating shaft is movably fitted outside the internal rotating shaft. The top of the external rotating shaft is adapted to the groove structure. The rotating device is connected to the external rotating shaft to drive the substrate carrier to rotate. The internal rotating shaft extends and is disposed inside the rotating device so that it remains stationary during the movement of the external rotating shaft. A shaft heating device is disposed on the inner rotating shaft and has a gap between it and the outer rotating shaft. The shaft heating device includes a shaft heating element disposed on the top of the inner rotating shaft and surrounded by the groove structure. An external power supply device is electrically connected to the shaft heating device through the internal rotating shaft to supply power to the shaft heating element.

2. The semiconductor growth apparatus according to claim 1, characterized in that, The top of the external rotating shaft includes a rotating shaft protrusion. Both the rotating shaft protrusion and the groove structure are frustoconical. The outer sidewall of the rotating shaft protrusion and the inner sidewall of the groove structure are inclined to the central axis of the substrate carrier and expand in a direction away from the top surface of the substrate carrier. A portion of the outer sidewall of the rotating shaft protrusion is attached to a portion of the inner sidewall of the groove structure.

3. The semiconductor growth apparatus according to claim 2, characterized in that, There is a gap between the top surface of the protruding section of the rotating shaft and the bottom wall of the groove structure.

4. The semiconductor growth apparatus according to claim 2, characterized in that, The outer wall of the rotating shaft protrusion includes a top sidewall connected to the bottom wall of the groove structure and a bottom sidewall connected to the bottom surface of the substrate carrier. The top sidewall is in contact with the corresponding inner sidewall of the groove structure, and there is a gap between the bottom sidewall and the corresponding inner sidewall of the groove structure.

5. The semiconductor growth apparatus according to claim 2, characterized in that, The top of the internal rotating shaft includes an inner rotating shaft protrusion, which is frustoconical in shape. Its outer side wall is inclined to the central axis of the substrate carrier and expands in a direction away from the top surface of the substrate carrier. The shaft heating element is disposed on the exposed surface of the inner rotating shaft protrusion and has a gap between it and the rotating shaft protrusion.

6. The semiconductor growth apparatus according to claim 1, characterized in that, The groove structure, the external rotating shaft, and the internal rotating shaft are all axisymmetric structures, and their respective central axes coincide with the central axis of the substrate carrier.

7. The semiconductor growth apparatus according to claim 1, characterized in that, The top of the outer pivot includes a pivot protrusion section, and the top of the inner pivot includes an inner pivot protrusion portion. The pivot protrusion section and the inner pivot protrusion portion have the same outline shape.

8. The semiconductor growth apparatus according to claim 1, characterized in that, The top of the inner rotating shaft includes an inner rotating shaft protrusion, and the shaft heating element is disposed on the surface of the inner rotating shaft protrusion and has a gap between it and the outer rotating shaft.

9. The semiconductor growth apparatus according to claim 8, characterized in that, The arrangement density of the shaft heating elements on the top surface of the inner rotating shaft protrusion is set as follows: The density of the shaft heating element located on the side wall of the inner rotating shaft protrusion is... ,in, = ,or > .

10. The semiconductor growth apparatus according to claim 8, characterized in that, The distance between the shaft heating element located on the top surface of the inner rotating shaft protrusion and the bottom wall of the groove structure is... The distance between the shaft heating element located on the side wall of the inner rotating shaft protrusion and the side wall of the groove structure is... ,in, = .

11. The semiconductor growth apparatus according to claim 8, characterized in that, The internal rotating shaft also includes an inner rotating shaft extension section connected to the protruding portion of the inner rotating shaft, and the shaft heating element is also disposed on the side wall of the inner rotating shaft extension section.

12. The semiconductor growth apparatus according to claim 1, characterized in that, The internal rotating shaft is an insulated rotating shaft or a conductive rotating shaft, the conductor is disposed on the internal rotating shaft, and the shaft heating device further includes a conductor whose two ends are respectively electrically connected to the shaft heating element and the external power supply device; When the internal rotating shaft is a conductive rotating shaft, the shaft heating device further includes an insulating structure, and the shaft heating element and the conductor are electrically insulated from the internal rotating shaft through the insulating structure.

13. The semiconductor growth apparatus according to claim 1, characterized in that, It also includes a process chamber, and the rotating device includes a fixed base plate and a rotating sealing assembly with a dynamic seal disposed on the top of the fixed base plate; The rotary sealing assembly is connected to the external rotating shaft and is dynamically sealed within the process chamber; The internal rotating shaft extends into the rotary sealing assembly and is fixedly mounted on the fixed base plate.

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