GaN device dynamic high-temperature working life test circuit, method and device

Abstract

The invention provides a dynamic high-temperature working life test circuit, method and device for a GaN device, and the circuit comprises a voltage output module, a drive test module, a follow current module and a load output module, and the voltage output module is electrically connected with the follow current module and the GaN device; the GaN is electrically connected with the SiC test accompanying device and the follow current module, and a GaN grid electrode is used as a control end of the GaN; the SiC test accompanying device is electrically connected with the first inductor, and a grid electrode of the SiC test accompanying device serves as a control end of the SiC test accompanying device; the first inductor is electrically connected with the load output module; the load output module is electrically connected with the follow current module; and the two devices are controlled to be switched off or switched on through the first driving signal and the second driving signal, so that the dynamic high-temperature working life test circuit of the GaN device enters different working modes, and the dynamic high-temperature working life test of the GaN device is realized. According to the dynamic high-temperature working life test circuit for the GaN device, the working performance of the GaN device under the conditions of high temperature, high frequency and high power consumption can be simulated, and the dynamic high-temperature working life test of the GaN device is completed.

Description

Technical Field

[0001] This invention relates to the field of power semiconductor device testing, and in particular to a dynamic high-temperature operating life test circuit, method, and apparatus for GaN devices. Background Technology

[0002] GaN devices, with their high breakdown voltage, high electron mobility, wide bandgap, and strong high-temperature resistance, have shown broad application prospects in power electronics and radio frequency fields under high-power, high-temperature, and high-frequency conditions. Because GaN devices operate with high power density, to ensure their safety and stability in practical use, DHTOL (Dynamic High Temperature Operating Life) testing is necessary to evaluate their actual performance under long-term high-temperature and high-load operating conditions. Therefore, constructing a DHTOL testing device that can accurately simulate the real operating environment of GaN devices is of great significance for promoting the reliable application of GaN devices.

[0003] Under the current technological background, current DHTOL test equipment generally has obvious limitations and is difficult to effectively simulate the high-frequency, high-temperature and high-power operating environment required by GaN devices. As a result, it cannot fully reflect the performance characteristics of the devices under extreme conditions. For example, existing technical solutions control the test sample to carry out DHTOL aging tests through DC power supply, current-limiting resistor or inductor and PWM generator. Although it can achieve basic aging test functions, it cannot provide high-frequency, high-voltage and high-power test conditions for GaN devices. Summary of the Invention

[0004] The present invention aims to provide a dynamic high-temperature operating life test circuit, method and apparatus for GaN devices to solve the above-mentioned technical problems, and to simulate the working performance of GaN devices under high temperature, high frequency and high power consumption conditions, and to complete the dynamic high-temperature operating life test of GaN devices.

[0005] To address the aforementioned technical problems, this invention provides a dynamic high-temperature operating life test circuit for GaN devices, comprising a voltage output module, a drive test module, a freewheeling module, and a load output module. The drive test module includes a GaN device, a SiC test device, and a first inductor. The positive output terminal of the voltage output module is electrically connected to the drain of the GaN device, and the negative output terminal of the voltage output module is electrically connected to the input terminal of the freewheeling module. The drain of the GaN device is electrically connected to the drain of the SiC test device, the source of the GaN device is electrically connected to the output terminal of the freewheeling module, the source of the GaN device is electrically connected to the source of the SiC test device, and the gate of the GaN device serves as the control terminal of the GaN device. The source of the SiC test device is electrically connected to one end of the first inductor, and the gate of the SiC test device serves as the control terminal of the SiC test device. The other end of the first inductor is electrically connected to the input terminal of the load output module; The output terminal of the load output module is electrically connected to the output terminal of the freewheeling module; The GaN device dynamic high-temperature operating life test circuit acquires a first driving signal and a second driving signal, and controls the GaN device and the SiC test device to be turned off or on through the first driving signal and the second driving signal, so that the GaN device dynamic high-temperature operating life test circuit enters different working modes, thereby realizing the dynamic high-temperature operating life test of the GaN device.

[0006] In the above scheme, when the GaN device is off and the SiC test device is on, the voltage output module charges the first inductor through the SiC test device to store electrical energy. When the GaN device switches from off to on and the SiC test device switches from on to off, the SiC test device assists the GaN device through the final transient time, preventing the GaN device from failing due to current overshoot during the transient process. Then, the voltage output module outputs to the load output module through the GaN device for discharge, allowing the GaN device to undergo a dynamic high-temperature operating life test. When the GaN device switches from on to off and the SiC test device switches from off to on, the G... The operation of the GaN device avoids problems such as sudden current changes that may occur when the driving signals of the two devices stop simultaneously. It ensures that the voltage output module smoothly transitions from discharging through the GaN device to discharging through the SiC test device. When the GaN device and the SiC test device are both off, the voltage output module does not output current to the dynamic high-temperature operating life test circuit. The stored energy in the first inductor is transferred to the load output module through the freewheeling module for discharge. After the discharge is completed, the dynamic high-temperature operating life test circuit returns to its initial state, preparing for the next dynamic high-temperature operating life test.

[0007] The aforementioned dynamic high-temperature operating life test circuit employs a SiC interpolation device to assist GaN devices in completing the dynamic high-temperature operating life test. During the test, controlling the on / off state of the SiC interpolation device helps the circuit reach a stable state more quickly, preventing the transient high current generated during the charging of the first inductor from impacting the GaN device and thus protecting it from failure due to current overshoot. Simultaneously, at specific stages, the SiC interpolation device can work in conjunction with the GaN device, enabling the circuit to better simulate the high-temperature, high-frequency, and high-power operating environment required by the GaN device. Furthermore, by employing the first inductor, during the operation of the dynamic high-temperature operating life test circuit, the first inductor can store and release energy, participating in the current change process and working collaboratively with the GaN device and the SiC interpolation device to create the high-temperature, high-frequency, and high-power operating environment required by the GaN device. Then, by employing a freewheeling module, when the GaN device or SiC test device is turned off, the current in the first inductor cannot change abruptly. The freewheeling module provides a freewheeling path, preventing excessively high back electromotive force from damaging the GaN device and ensuring the continuous and stable operation of the dynamic high-temperature operating life test circuit, while also maintaining current continuity. Finally, by employing a load output module, on the one hand, the load output module is connected to the first inductor, forming a loop together with the first inductor to output or consume the energy stored in the first inductor in an appropriate form, simulating the load characteristics in actual operation; on the other hand, the load output module is connected to the freewheeling module to ensure the normal flow of current in the dynamic high-temperature operating life test circuit.

[0008] Furthermore, the voltage output module includes a first capacitor; specifically: One end of the first capacitor serves as the positive output terminal of the voltage output module and is electrically connected to the drain of the GaN device, while the other end of the first capacitor serves as the reverse output terminal of the voltage output module and is electrically connected to the input terminal of the freewheeling module.

[0009] In the above scheme, by using the first capacitor, high-frequency ripple in the external input voltage can be filtered out, making the voltage input to the drain of the GaN device smoother and simulating the stable power supply environment of the GaN device in actual operation. On the other hand, during the test, when the instantaneous current of the circuit increases and the power supply output voltage drops briefly, the first capacitor can quickly release the stored charge to replenish the instantaneous energy gap, prevent the GaN device from operating abnormally due to the voltage drop, and ensure the stability and continuity of the test process.

[0010] Furthermore, the freewheeling module employs a freewheeling diode or a freewheeling SiC transistor.

[0011] In the above scheme, by employing a freewheeling diode, when both the GaN device and the SiC test device are off, the first inductor generates a reverse electromotive force due to its characteristic that current cannot change abruptly. At this time, the freewheeling diode conducts due to forward bias, allowing the energy stored in the first inductor to be smoothly released through freewheeling. This avoids reverse high voltage breakdown of the GaN device and the SiC test device, and ensures current continuity, preventing current interruption that could lead to test abnormalities. By using a freewheeling SiC transistor, energy loss during the freewheeling process can be reduced based on the freewheeling diode implementation. Furthermore, by setting a dead time (i.e., both the GaN device and the freewheeling SiC transistor's drive signals are low), the common-state short-circuit problem of the freewheeling SiC transistor turning on prematurely before the GaN device is fully off, or vice versa, can be avoided. This further ensures the safety and stability of the freewheeling process and improves the stability of the circuit under high-frequency, high-power test conditions.

[0012] Furthermore, the load output module includes a first resistor; specifically: One end of the first resistor is electrically connected to the other end of the first inductor as the input terminal of the load output module. The other end of the first resistor is electrically connected to the output terminal of the load output module and the output terminal of the freewheeling module.

[0013] In the above scheme, by using a first resistor, the GaN device can withstand a load power consumption similar to that in actual operation during the dynamic high temperature working life test, ensuring that the test environment is close to the real working conditions, thereby more accurately evaluating the performance stability and life of the GaN device under long-term high temperature and high load conditions.

[0014] Furthermore, the load output module also includes a second capacitor; specifically: One end of the second capacitor is electrically connected to one end of the first resistor, and the other end of the second capacitor is electrically connected to the other end of the first resistor.

[0015] In the above scheme, by using a second capacitor, on the one hand, high-frequency voltage ripple can be filtered out during the test, so that the output voltage remains stable, avoiding interference with the working state of the GaN device and ensuring the accuracy of the test; on the other hand, when instantaneous current fluctuations occur in the circuit, the second capacitor can quickly release the stored charge to replenish the energy gap or absorb excess energy, preventing sudden changes in circuit voltage or current due to instantaneous energy imbalance, protecting the GaN device from overshoot, and maintaining the continuity and stability of the test process.

[0016] This invention provides a method for dynamic high-temperature operating life testing of GaN devices, applied to a GaN device dynamic high-temperature operating life testing circuit as described above. The method includes the following steps: The output current is generated based on the voltage output module; Acquire the first drive signal and the second drive signal; If the first driving signal is in a low-level period and the second driving signal is in a high-level period, the GaN device is turned off and the SiC test device is turned on. The GaN device dynamic high-temperature working life test circuit enters the first working mode so that the output current is transmitted to the first inductor through the SiC test device to form stored energy. If the second drive signal is in the PWM high level period first, and the first drive signal is in the PWM high level period later, the GaN device switches from cutoff to conduction, and the SiC test device switches from conduction to cutoff. The GaN device dynamic high temperature working life test circuit enters the second working mode, so that the output current is converted from being transmitted to the load output module through the SiC test device for discharge to being transmitted to the load output module through the GaN device for discharge. If the first drive signal is in the PWM high-level period and the second drive signal is in the low-level period, the GaN device is turned on and the SiC test device is turned off. The GaN device dynamic high-temperature working life test circuit enters the third working mode so that the output current is transmitted to the load output module through the GaN device for discharge. If the first driving signal is in a low-level period first, and the second driving signal is in a low-level period later, the GaN device changes from being on to being off, and the SiC test device changes from being off to being on. The GaN device dynamic high-temperature working life test circuit enters the fourth working mode, so that the output current is converted from being transmitted through the GaN device to the load output module for discharge to being transmitted through the SiC test device to the load output module for discharge. If both the first driving signal and the second driving signal are in a low-level period, the GaN device is turned off, the SiC test device is turned off, and the GaN device dynamic high-temperature working life test circuit enters the fifth working mode, so that the first inductor transmits the stored electrical energy to the load output module for discharge through the freewheeling module.

[0017] This invention provides a method for dynamic high-temperature operating life testing of GaN devices. It acquires a first driving signal to control the GaN device and a second driving signal to control a SiC test device, setting the switching sequence of both according to test requirements. This provides signal support for subsequent phased dynamic high-temperature operating life testing of the GaN device. It completes circuit pre-charging and GaN device protection, laying a stable foundation for subsequent aging tests. Specifically, by controlling the conduction of the SiC test device through the second driving signal, the GaN device dynamic high-temperature operating life test circuit enters a first operating mode. This allows the output current of the voltage output module to preferentially charge the first inductor, rather than flowing directly through the GaN device. This avoids the transient high current impact on the GaN device during the initial charging of the first inductor, and simultaneously allows the circuit to quickly reach an energy balance state, preventing GaN damage due to overcurrent in the early stages of the test and ensuring the safety of the device under test. Next, by designing the timing so that the second drive signal is initially at a high PWM level followed by the first drive signal, the GaN device dynamic high-temperature operating life test circuit enters its second operating mode. This allows the SiC test device to maintain circuit energy transmission, assisting the GaN device through the transient period of state switching and preventing GaN failure due to a sudden current surge at the moment of switching from cutoff to conduction. Simultaneously, it completes the switching of the current transmission path, preparing the GaN device for the dynamic high-temperature operating life test and ensuring the reliability of the test transition. Subsequently, by setting the first drive signal to a high PWM level and the second drive signal to a low level, the GaN device dynamic high-temperature operating life test circuit enters its third operating mode. This allows the GaN device to continuously conduct at high frequency under PWM high-level control. The output current of the voltage output module is transmitted to the load output module via the GaN device. The consumption of the load output module simulates the high-power scenario of the GaN device in actual operation. Combined with the high-temperature environment, this allows the GaN device to operate under high-temperature, high-frequency, and high-power conditions to evaluate the performance stability and lifespan of the GaN device, achieving the core objective of conducting dynamic high-temperature operating life tests on GaN devices. Then, by designing the timing so that the first drive signal is low for a period of time and the second drive signal is low for a period of time, the GaN device dynamic high temperature operating life test circuit enters the fourth operating mode, allowing the GaN to switch from on to off first, and the SiC test device then turns on to take over the current transmission, preventing current interruption or voltage change caused by both being off at the same time; at the same time, the current transmission path is switched back to the SiC test device, and the energy consumption of the load output module is maintained by the auxiliary role of the SiC test device, avoiding transient impacts on the GaN device or other circuit components.Finally, by keeping both the first and second drive signals at a low level, the GaN device dynamic high-temperature operating life test circuit enters the fifth operating mode. At this time, both the GaN device and the SiC test device are turned off, and the voltage output module stops supplying power. The stored energy in the first inductor forms a loop through the freewheeling module and discharges to the load output module until it is completely released. This process avoids the stored energy in the first inductor from generating high voltage that could damage the device, and it also restores the circuit to its initial state, ensuring that the next test can be conducted under the same initial conditions, thus guaranteeing the repeatability and accuracy of the test.

[0018] Furthermore, the voltage output module includes a first capacitor; specifically: One end of the first capacitor serves as the positive output terminal of the voltage output module and is electrically connected to the drain of the GaN device, while the other end of the first capacitor serves as the reverse output terminal of the voltage output module and is electrically connected to the input terminal of the freewheeling module.

[0019] In the above scheme, by using the first capacitor, high-frequency ripple in the external input voltage can be filtered out, making the voltage input to the drain of the GaN device smoother and simulating the stable power supply environment of the GaN device in actual operation. On the other hand, during the test, when the instantaneous current of the circuit increases and the power supply output voltage drops briefly, the first capacitor can quickly release the stored charge to replenish the instantaneous energy gap, prevent the GaN device from operating abnormally due to the voltage drop, and ensure the stability and continuity of the test process.

[0020] Furthermore, the freewheeling module employs a freewheeling diode or a freewheeling SiC transistor.

[0021] In the above scheme, by employing a freewheeling diode, when both the GaN device and the SiC test device are off, the first inductor generates a reverse electromotive force due to its characteristic that current cannot change abruptly. At this time, the freewheeling diode conducts due to forward bias, allowing the energy stored in the first inductor to be smoothly released through freewheeling. This avoids reverse high voltage breakdown of the GaN device and the SiC test device, and ensures current continuity, preventing current interruption that could lead to test abnormalities. By using a freewheeling SiC transistor, energy loss during the freewheeling process can be reduced based on the freewheeling diode implementation. Furthermore, by setting a dead time (i.e., both the GaN device and the freewheeling SiC transistor's drive signals are low), the common-state short-circuit problem of the freewheeling SiC transistor turning on prematurely before the GaN device is fully off, or vice versa, can be avoided. This further ensures the safety and stability of the freewheeling process and improves the stability of the circuit under high-frequency, high-power test conditions.

[0022] Furthermore, the load output module includes a first resistor; specifically: One end of the first resistor is electrically connected to the other end of the first inductor as the input terminal of the load output module. The other end of the first resistor is electrically connected to the output terminal of the load output module and the output terminal of the freewheeling module.

[0023] In the above scheme, by using a first resistor, the GaN device can withstand a load power consumption similar to that in actual operation during the dynamic high temperature working life test, ensuring that the test environment is close to the real working conditions, thereby more accurately evaluating the performance stability and life of the GaN device under long-term high temperature and high load conditions.

[0024] This invention provides a dynamic high-temperature operating life testing device for GaN devices, comprising a housing, wherein a dynamic high-temperature operating life testing circuit for GaN devices as described above is disposed within the housing; the housing includes a first input interface, a second input interface, a third input interface, and a fourth input interface; wherein: The positive output terminal of the voltage output module is electrically connected to the first input interface, and the negative output terminal of the voltage output module is electrically connected to the second input interface. The first input interface and the second input interface are used to acquire the input current. The third input interface is electrically connected to the control terminal of the GaN device. The fourth input interface is electrically connected to the control terminal of the SiC test device.

[0025] The above-mentioned solution provides a GaN device dynamic high-temperature operating life test device with a simple structure. In practical applications, it only needs to be connected to the positive output terminal of the voltage output module through the first input interface, the reverse output terminal of the voltage output module through the second input interface, the control terminal of the GaN device through the third input interface, and the control terminal of the SiC test device through the fourth input interface. It can simulate the working performance of GaN devices under high temperature, high frequency, and high power consumption conditions and complete the dynamic high-temperature operating life test of GaN devices. Attached Figure Description

[0026] Figure 1 This is a circuit diagram of a dynamic high-temperature operating life test circuit for a GaN device provided in an embodiment of the present invention; Figure 2 A circuit diagram of a GaN device dynamic high-temperature operating life test circuit using a freewheeling diode, provided as an embodiment of the present invention; Figure 3 A circuit diagram of a GaN device dynamic high-temperature operating life test circuit using a freewheeling SiC transistor, provided as an embodiment of the present invention; Figure 4A schematic diagram of a device drive signal using a freewheeling diode in a dynamic high-temperature operating life test circuit for a GaN device according to an embodiment of the present invention; Figure 5 This is a schematic diagram of the device drive signal using a freewheeling SiC transistor in a dynamic high-temperature operating life test circuit for GaN devices according to an embodiment of the present invention. Figure 6 The measured waveform diagram is provided for a dynamic high-temperature operating life test circuit of GaN device according to an embodiment of the present invention. Detailed Implementation

[0027] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0028] This embodiment provides a dynamic high-temperature operating life test circuit for GaN devices. For details of its architecture, please refer to [link to relevant documentation]. Figure 1 It includes a voltage output module, a drive test module, a freewheeling module, and a load output module. The drive test module includes a GaN device, a SiC test device SiC1, and a first inductor L1. The positive output terminal of the voltage output module is electrically connected to the drain of the GaN device, and the negative output terminal of the voltage output module is electrically connected to the input terminal of the freewheeling module. The drain of the GaN device is electrically connected to the drain of the SiC test device SiC1, the source of the GaN device is electrically connected to the output terminal of the freewheeling module, the source of the GaN device is electrically connected to the source of the SiC test device SiC1, and the gate of the GaN device serves as the control terminal of the GaN device. The source of the SiC test device SiC1 is electrically connected to one end of the first inductor L1, and the gate of the SiC test device SiC1 serves as the control terminal of the SiC test device SiC1. The other end of the first inductor L1 is electrically connected to the input terminal of the load output module; The output terminal of the load output module is electrically connected to the output terminal of the freewheeling module; The GaN device dynamic high-temperature operating life test circuit acquires a first driving signal and a second driving signal, and controls the GaN device and the SiC test device SiC1 to be cut off or turned on through the first driving signal and the second driving signal, so that the GaN device dynamic high-temperature operating life test circuit enters different working modes and realizes the dynamic high-temperature operating life test of GaN device.

[0029] In this embodiment, when the GaN device is off and the SiC test device SiC1 is on, the voltage output module charges the first inductor L1 through the SiC test device SiC1 to store electrical energy. When the GaN device switches from off to on and the SiC test device SiC1 switches from on to off, the SiC test device SiC1 assists the GaN device through the final transient time, preventing the GaN device from failing due to current overshoot during the transient process. Then, the voltage output module outputs to the load output module through the GaN device for discharge, allowing the GaN device to undergo a dynamic high-temperature operating life test. When the GaN device switches from on to off and the SiC test device SiC1 switches from off to on... When the circuit is turned on, the operation of the GaN device is terminated to avoid problems such as sudden current changes that may occur due to the simultaneous cessation of the driving signals of the two devices. This ensures a smooth transition from the voltage output module discharging through the GaN device to the load output module discharging through the SiC test device SiC1. When the GaN device and the SiC test device SiC1 are turned off, the voltage output module does not output current to the dynamic high-temperature operating life test circuit. The stored energy in the first inductor L1 is transferred to the load output module for discharge through the freewheeling module. After the discharge is completed, the dynamic high-temperature operating life test circuit returns to its initial state, preparing for the next dynamic high-temperature operating life test.

[0030] In this embodiment, a 650V 13A gallium nitride (GaN) device is used. The aforementioned dynamic high-temperature operating life test circuit employs a SiC interpolation device (SiC1) to assist the GaN device in completing the dynamic high-temperature operating life test. During the test, controlling the on / off state of SiC1 helps the circuit reach a stable state more quickly, preventing the transient high current generated during the charging of the first inductor L1 from impacting the GaN device and thus protecting it from current overshoot. Simultaneously, at specific stages, SiC1 works in conjunction with the GaN device, enabling the circuit to better simulate the high-temperature, high-frequency, and high-power operating environment required by the GaN device. Furthermore, by using the first inductor L1, during the operation of the dynamic high-temperature operating life test circuit, L1 can store and release energy, participate in the current change process, and work collaboratively with the GaN device and SiC1 to create the high-temperature, high-frequency, and high-power operating environment required by the GaN device. Then, by employing a freewheeling module, when the GaN device or the SiC test device SiC1 is turned off, the current in the first inductor L1 cannot change abruptly. The freewheeling module provides a freewheeling path, preventing excessively high back electromotive force from damaging the GaN device and ensuring the continuous and stable operation of the dynamic high-temperature operating life test circuit, while also maintaining current continuity. Finally, by employing a load output module, on the one hand, the load output module is connected to the first inductor L1, forming a loop together with the first inductor L1 to output or consume the energy stored in the first inductor L1 in an appropriate form, simulating the load characteristics in actual operation; on the other hand, the load output module is connected to the freewheeling module to ensure the normal flow of current in the dynamic high-temperature operating life test circuit.

[0031] Furthermore, the voltage output module includes a first capacitor C1; specifically: One end of the first capacitor C1 is connected to the drain of the GaN device as the positive output terminal of the voltage output module, and the other end of the first capacitor C1 is connected to the input terminal of the freewheeling module as the reverse output terminal of the voltage output module.

[0032] In this embodiment, by using the first capacitor C1, high-frequency ripple in the external input voltage can be filtered out, making the voltage input to the drain of the GaN device smoother and simulating the stable power supply environment in the actual operation of the GaN device. On the other hand, during the test, when the instantaneous current of the circuit increases and the power supply output voltage drops briefly, the first capacitor C1 can quickly release the stored charge to replenish the instantaneous energy gap, prevent the GaN device from operating abnormally due to the sudden voltage drop, and ensure the stability and continuity of the test process.

[0033] Furthermore, the freewheeling module adopts a freewheeling diode D1 or a freewheeling SiC transistor SiC2.

[0034] In this embodiment, please refer to Figure 2 By employing a freewheeling diode D1, when both the GaN device and the SiC test device SiC1 are off, the first inductor L1 generates a reverse electromotive force due to its characteristic that current cannot change abruptly. At this time, the freewheeling diode D1 conducts because it is forward biased, allowing the energy stored in the first inductor L1 to be smoothly released through the freewheeling current. This avoids reverse high voltage breakdown of the GaN device and the SiC test device SiC1, while also ensuring current continuity and preventing current interruptions that could lead to experimental abnormalities. Please refer to [link to relevant documentation]. Figure 3 By employing a freewheeling SiC transistor SiC2, energy loss during the freewheeling process can be reduced based on the freewheeling diode D1. Furthermore, by setting a dead time (i.e., both the GaN device and the freewheeling SiC transistor SiC2 have low-level drive signals), the common-state short-circuit problem of the freewheeling SiC transistor SiC2 turning on prematurely before the GaN device is fully turned off, or the GaN device turning on prematurely before the freewheeling SiC transistor SiC2 is fully turned off, can be avoided. This further ensures the safety and stability of the freewheeling process and further improves the stability of the circuit under high-frequency, high-power test conditions.

[0035] Furthermore, the load output module includes a first resistor R1; specifically: One end of the first resistor R1 is electrically connected to the other end of the first inductor L1 as the input terminal of the load output module. The other end of the first resistor R1 is electrically connected to the output terminal of the load output module and the output terminal of the freewheeling module.

[0036] In this embodiment, by using a first resistor R1, the GaN device can withstand a load power consumption similar to that of actual operation during the dynamic high temperature working life test, ensuring that the test environment is close to the real working conditions, thereby more accurately evaluating the performance stability and life of the GaN device under long-term high temperature and high load conditions.

[0037] Furthermore, the load output module also includes a second capacitor C2; specifically: One end of the second capacitor C2 is electrically connected to one end of the first resistor R1, and the other end of the second capacitor C2 is electrically connected to the other end of the first resistor R1.

[0038] In this embodiment, by employing a second capacitor C2, on the one hand, high-frequency voltage ripple can be filtered out during the test, keeping the output voltage stable and avoiding interference with the working state of the GaN device, thus ensuring the accuracy of the test; on the other hand, when instantaneous current fluctuations occur in the circuit, the second capacitor C2 can quickly release the stored charge to replenish the energy gap or absorb excess energy, preventing sudden changes in circuit voltage or current due to instantaneous energy imbalance, protecting the GaN device from overshoot, and maintaining the continuity and stability of the test process.

[0039] This embodiment provides a dynamic high-temperature operating life test method for GaN devices, applied to a GaN device dynamic high-temperature operating life test circuit as described above. The method includes the following steps: The output current is generated based on the voltage output module; Acquire the first drive signal and the second drive signal; If the first driving signal is in a low-level period and the second driving signal is in a high-level period, the GaN device is turned off and the SiC test device SiC1 is turned on. The GaN device dynamic high-temperature working life test circuit enters the first working mode so that the output current is transmitted to the first inductor through the SiC test device SiC1 to form stored energy. If the second drive signal is in the PWM high level period first, and the first drive signal is in the PWM high level period later, the GaN device switches from cutoff to conduction, and the SiC test device SiC1 switches from conduction to cutoff. The GaN device dynamic high temperature working life test circuit enters the second working mode, so that the output current is converted from being transmitted to the load output module through the SiC test device SiC1 for discharge to being transmitted to the load output module through the GaN device for discharge. If the first drive signal is in the PWM high-level period and the second drive signal is in the low-level period, the GaN device is turned on and the SiC test device SiC1 is turned off. The GaN device dynamic high-temperature working life test circuit enters the third working mode so that the output current is transmitted to the load output module through the GaN device for discharge. If the first driving signal is in a low-level period first, and the second driving signal is in a low-level period later, the GaN device changes from being on to being off, and the SiC test device SiC1 changes from being off to being on. The GaN device dynamic high-temperature working life test circuit enters the fourth working mode, so that the output current is converted from being transmitted through the GaN device to the load output module for discharge to being transmitted through the SiC test device SiC1 to the load output module for discharge. If the first driving signal is at a low level and the second driving signal is at a low level, the GaN device is turned off, the SiC test device SiC1 is turned off, and the GaN device dynamic high temperature working life test circuit enters the fifth working mode, so that the first inductor transmits the stored electrical energy to the load output module for discharge through the freewheeling module.

[0040] This embodiment provides a method for dynamic high-temperature operating life testing of GaN devices. It acquires a first driving signal to control the GaN device and a second driving signal to control the SiC test device (SiC1). The switching timing of both signals is set according to the test requirements, providing signal support for the subsequent phased implementation of dynamic high-temperature operating life testing of the GaN device. This completes circuit pre-charging and GaN device protection, laying a stable foundation for subsequent aging tests. For specific details, please refer to [link to documentation]. Figure 4 The second driving signal controls the conduction of the SiC test device SiC1, which typically lasts for tens of milliseconds. Figure 4 During the t2 period, the GaN device dynamic high-temperature operating life test circuit enters the first operating mode, allowing the output current of the voltage output module to preferentially charge the first inductor L1, rather than flowing directly through the GaN device. This avoids the transient large current impacting the GaN device during the initial charging of the first inductor L1, and simultaneously allows the circuit to quickly reach an energy balance state, preventing damage to the GaN due to overcurrent in the early stages of the test, thus ensuring the safety of the device under test. Next, through a timing design where the second drive signal is first in the PWM high-level period, and the first drive signal is subsequently in the PWM high-level period, i.e. Figure 4 During the t3 period, the GaN device dynamic high-temperature operating life test circuit enters the second operating mode, enabling the SiC companion device SiC1 to maintain circuit energy transmission first, assisting the GaN device through the transient period of state switching, and preventing GaN failure due to a sudden current surge at the moment of switching from cutoff to conduction; at the same time, it completes the switching of the current transmission path, preparing the GaN device for entering the dynamic high-temperature operating life test, and ensuring the reliability of the test transition. Subsequently, by keeping the first drive signal in the PWM high-level period and the second drive signal in the low-level period, i.e. Figure 4 During the t4 period, the GaN device dynamic high-temperature operating life test circuit enters the third operating mode, allowing the GaN device to continuously conduct at high frequency under PWM high-level control. The output current of the voltage output module is transmitted to the load output module through the GaN device. The consumption of the load output module simulates the high-power scenario of the GaN device in actual operation. Combined with the high-temperature environment, the GaN device can operate under high temperature, high frequency, and high power consumption conditions to evaluate the performance stability and lifespan of the GaN device, achieving the core objective of dynamic high-temperature operating life testing of the GaN device. Then, by designing the timing so that the first drive signal is initially at a low level, followed by the second drive signal at a low level, i.e. Figure 4 During the t5 period, the GaN device dynamic high-temperature operating life test circuit enters the fourth operating mode, allowing the GaN to switch from conduction to cutoff first. The SiC auxiliary device SiC1 then conducts to receive current transmission, preventing current interruption or voltage surges caused by both devices being simultaneously cut off. Simultaneously, the current transmission path is switched back to the SiC auxiliary device SiC1, whose auxiliary function maintains the energy consumption of the load output module, preventing transient impacts on the GaN device or other circuit components. Finally, by keeping both the first and second drive signals at a low level, i.e. Figure 4 During the t6 period, the GaN device dynamic high-temperature working life test circuit enters the fifth working mode. At this time, both the GaN device and the SiC test device SiC1 are cut off, and the voltage output module stops supplying power. At this time, the stored energy in the first inductor L1 forms a loop through the freewheeling module and discharges to the load output module until it is completely released. This process not only avoids the stored energy in the first inductor L1 from generating high voltage and damaging the device, but also restores the circuit to the initial state, ensuring that the next test can be carried out under the same initial conditions, thus ensuring the repeatability and accuracy of the test.

[0041] Furthermore, the voltage output module includes a first capacitor C1; specifically: One end of the first capacitor C1 is connected to the drain of the GaN device as the positive output terminal of the voltage output module, and the other end of the first capacitor C1 is connected to the input terminal of the freewheeling module as the reverse output terminal of the voltage output module.

[0042] In this embodiment, by using the first capacitor C1, high-frequency ripple in the external input voltage can be filtered out, making the voltage input to the drain of the GaN device smoother and simulating the stable power supply environment in the actual operation of the GaN device. On the other hand, during the test, when the instantaneous current of the circuit increases and the power supply output voltage drops briefly, the first capacitor C1 can quickly release the stored charge to replenish the instantaneous energy gap, prevent the GaN device from operating abnormally due to the sudden voltage drop, and ensure the stability and continuity of the test process.

[0043] Furthermore, the freewheeling module adopts a freewheeling diode D1 or a freewheeling SiC transistor SiC2.

[0044] In this embodiment, by employing a freewheeling diode D1, when both the GaN device and the SiC test device SiC1 are off, the first inductor L1 generates a reverse electromotive force due to its characteristic that current cannot change abruptly. At this time, the freewheeling diode D1 conducts due to forward bias, allowing the energy stored in the first inductor L1 to be smoothly released through the freewheeling diode. This avoids reverse high voltage breakdown of the GaN device and the SiC test device SiC1, while also ensuring current continuity and preventing current interruptions that could lead to experimental abnormalities. By employing a freewheeling SiC transistor SiC2, the corresponding drive signal for SiC2 can be found in the experiment. Figure 5 When the second drive signal is at the PWM high level first, and the first drive signal is at the PWM high level later, the drive signal corresponding to the freewheeling SiC transistor SiC2 is started together with the first drive signal (i.e., Figure 5 During the t3 period in the PWM signal, when the first drive signal is at a high PWM level and the second drive signal is at a low PWM level, the drive signal corresponding to the freewheeling SiC transistor SiC2 is at a high PWM level along with the first drive signal (i.e., during the t3 period). Figure 5 (during the t4 period). Then, when the first drive signal is low and the second drive signal is low, the drive signal corresponding to the freewheeling SiC transistor SiC2 is stopped along with the first drive signal (i.e., ...). Figure 5 During the t5 period. Finally, when the first drive signal is at a low level and the second drive signal is at a low level, the drive signal corresponding to the freewheeling SiC transistor SiC2 is also at a low level (i.e., Figure 5 (In the t6 period). The freewheeling SiC transistor SiC2 used can reduce energy loss during the freewheeling process based on the freewheeling diode D1. At the same time, by setting a dead time (i.e., the drive signals of both the GaN device and the freewheeling SiC transistor SiC2 are at a low level), it can avoid the common-state short circuit problem that occurs when the freewheeling SiC transistor SiC2 is turned on before the GaN device is completely turned off, or when the GaN device is turned on before the freewheeling SiC transistor SiC2 is completely turned off. This further ensures the safety and stability of the freewheeling process and further improves the stability of the circuit under high-frequency and high-power test conditions.

[0045] Furthermore, the load output module includes a first resistor R1; specifically: One end of the first resistor R1 is electrically connected to the other end of the first inductor L1 as the input terminal of the load output module. The other end of the first resistor R1 is electrically connected to the output terminal of the load output module and the output terminal of the freewheeling module.

[0046] In this embodiment, by using a first resistor R1, the GaN device can withstand a load power consumption similar to that of actual operation during the dynamic high temperature working life test, ensuring that the test environment is close to the real working conditions, thereby more accurately evaluating the performance stability and life of the GaN device under long-term high temperature and high load conditions.

[0047] This embodiment provides a dynamic high-temperature operating life testing device for GaN devices, including a housing, within which a dynamic high-temperature operating life testing circuit for GaN devices as described above is disposed; the housing includes a first input interface, a second input interface, a third input interface, and a fourth input interface; wherein: The positive output terminal of the voltage output module is electrically connected to the first input interface, and the negative output terminal of the voltage output module is electrically connected to the second input interface. The first input interface and the second input interface are used to acquire the input current. The third input interface is electrically connected to the control terminal of the GaN device. The fourth input interface is electrically connected to the control terminal of the SiC test device SiC1.

[0048] The GaN device dynamic high-temperature operating life test device provided in this embodiment has a simple structure. In practical applications, it only needs to be connected to the positive output terminal of the voltage output module through the first input interface, the reverse output terminal of the voltage output module through the second input interface, the control terminal of the GaN device through the third input interface, and the control terminal of the SiC test device SiC1 through the fourth input interface. It can simulate the working performance of GaN devices under high temperature, high frequency, and high power consumption conditions and complete the dynamic high-temperature operating life test of GaN devices.

[0049] This embodiment also provides a measured waveform diagram, such as... Figure 6 As shown, C1 is the first drive signal of the GaN device, C2 is the drain-source voltage waveform of the GaN device, C3 is the current of the first inductor L1, and C4 is the drain-source current waveform of the GaN device. The table above provides the test results for the GaN device. The GaN device operates at a frequency of 200kHz, with a voltage of 580V, a maximum current of 1.32A, and an RMS current of 496mA. It can fully simulate the actual performance of the GaN device under high frequency, high voltage, and high power consumption in the dynamic high temperature operating life test circuit provided in this embodiment.

[0050] The above description represents the preferred embodiments of the present invention. It should be noted that those skilled in the art can make various improvements and modifications without departing from the principles of the present invention, and these improvements and modifications are also considered to be within the scope of protection of the present invention.

Claims

1. A dynamic high-temperature operating life test circuit for GaN devices, characterized in that, It includes a voltage output module, a drive test module, a freewheeling module, and a load output module. The drive test module includes a GaN device, a SiC test device, and a first inductor. The positive output terminal of the voltage output module is electrically connected to the drain of the GaN device, and the negative output terminal of the voltage output module is electrically connected to the input terminal of the freewheeling module. The drain of the GaN device is electrically connected to the drain of the SiC test device, the source of the GaN device is electrically connected to the output terminal of the freewheeling module, the source of the GaN device is electrically connected to the source of the SiC test device, and the gate of the GaN device serves as the control terminal of the GaN device. The source of the SiC test device is electrically connected to one end of the first inductor, and the gate of the SiC test device serves as the control terminal of the SiC test device. The other end of the first inductor is electrically connected to the input terminal of the load output module; The output terminal of the load output module is electrically connected to the output terminal of the freewheeling module; The GaN device dynamic high-temperature operating life test circuit acquires a first driving signal and a second driving signal, and controls the GaN device and the SiC test device to be turned off or on through the first driving signal and the second driving signal, so that the GaN device dynamic high-temperature operating life test circuit enters different working modes, thereby realizing the dynamic high-temperature operating life test of the GaN device.

2. The dynamic high-temperature operating life test circuit for GaN devices according to claim 1, characterized in that, The voltage output module includes a first capacitor; specifically: One end of the first capacitor serves as the positive output terminal of the voltage output module and is electrically connected to the drain of the GaN device, while the other end of the first capacitor serves as the reverse output terminal of the voltage output module and is electrically connected to the input terminal of the freewheeling module.

3. The dynamic high-temperature operating life test circuit for GaN devices according to claim 2, characterized in that, The freewheeling module uses a freewheeling diode or a freewheeling SiC transistor.

4. The GaN device dynamic high-temperature operating life test circuit according to claim 3, characterized in that, The load output module includes a first resistor; specifically: One end of the first resistor is electrically connected to the other end of the first inductor as the input terminal of the load output module. The other end of the first resistor is electrically connected to the output terminal of the load output module and the output terminal of the freewheeling module.

5. The GaN device dynamic high-temperature operating life test circuit according to claim 4, characterized in that, The load output module further includes a second capacitor; specifically: One end of the second capacitor is electrically connected to one end of the first resistor, and the other end of the second capacitor is electrically connected to the other end of the first resistor.

6. A method for dynamic high-temperature operating life testing of GaN devices, characterized in that, The method, applied to a GaN device dynamic high-temperature operating life test circuit as described in any one of claims 1 to 5, comprises the following steps: The output current is generated based on the voltage output module; Acquire the first drive signal and the second drive signal; If the first driving signal is in a low-level period and the second driving signal is in a high-level period, the GaN device is turned off and the SiC test device is turned on. The GaN device dynamic high-temperature working life test circuit enters the first working mode so that the output current is transmitted to the first inductor through the SiC test device to form stored energy. If the second drive signal is in the PWM high level period first, and the first drive signal is in the PWM high level period later, the GaN device switches from cutoff to conduction, and the SiC test device switches from conduction to cutoff. The GaN device dynamic high temperature working life test circuit enters the second working mode, so that the output current is converted from being transmitted to the load output module through the SiC test device for discharge to being transmitted to the load output module through the GaN device for discharge. If the first drive signal is in the PWM high-level period and the second drive signal is in the low-level period, the GaN device is turned on and the SiC test device is turned off. The GaN device dynamic high-temperature working life test circuit enters the third working mode so that the output current is transmitted to the load output module through the GaN device for discharge. If the first driving signal is in a low-level period first, and the second driving signal is in a low-level period later, the GaN device changes from being on to being off, and the SiC test device changes from being off to being on. The GaN device dynamic high-temperature working life test circuit enters the fourth working mode, so that the output current is converted from being transmitted through the GaN device to the load output module for discharge to being transmitted through the SiC test device to the load output module for discharge. If both the first driving signal and the second driving signal are in a low-level period, the GaN device is turned off, the SiC test device is turned off, and the GaN device dynamic high-temperature working life test circuit enters the fifth working mode, so that the first inductor transmits the stored electrical energy to the load output module for discharge through the freewheeling module.

7. The method for dynamic high-temperature operating life testing of GaN devices according to claim 6, characterized in that, The voltage output module includes a first capacitor; specifically: One end of the first capacitor serves as the positive output terminal of the voltage output module and is electrically connected to the drain of the GaN device, while the other end of the first capacitor serves as the reverse output terminal of the voltage output module and is electrically connected to the input terminal of the freewheeling module.

8. The method for dynamic high-temperature operating life testing of GaN devices according to claim 7, characterized in that, The freewheeling module uses a freewheeling diode or a freewheeling SiC transistor.

9. The method for dynamic high-temperature operating life testing of GaN devices according to claim 6, characterized in that, The load output module includes a first resistor; specifically: One end of the first resistor is electrically connected to the other end of the first inductor as the input terminal of the load output module. The other end of the first resistor is electrically connected to the output terminal of the load output module and the output terminal of the freewheeling module.

10. A dynamic high-temperature operating life testing device for GaN devices, characterized in that, The device includes a housing, and the housing is provided with a GaN device dynamic high-temperature operating life test circuit as described in any one of claims 1 to 5; the housing includes a first input interface, a second input interface, a third input interface, and a fourth input interface; wherein: The positive output terminal of the voltage output module is electrically connected to the first input interface, and the negative output terminal of the voltage output module is electrically connected to the second input interface. The first input interface and the second input interface are used to acquire the input current. The third input interface is electrically connected to the control terminal of the GaN device. The fourth input interface is electrically connected to the control terminal of the SiC test device.

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