Cavity cleaning method

Abstract

The present invention provides a method of cleaning a cavity for forming a perovskite compound, the method comprising a step of exposing an interior of the cavity to a hydrogen (H)-containing gas plasma and a step of exposing the interior of the cavity to an oxygen (O)-containing gas plasma, in which after the step of exposing the interior of the cavity to the hydrogen (H)-containing gas plasma, the oxygen (O)-containing gas plasma is exposed to the interior of the cavity. A step of exposing the inside of the cavity to an oxygen (O)-containing gas plasma is performed.

Description

Technical Field

[0001] This invention relates to a method for cleaning a chamber. Background Technology

[0002] A solar cell is a device that converts light energy into electrical energy by utilizing the properties of semiconductors.

[0003] Solar cells have a PN junction structure where a positive (P) type semiconductor is bonded to a negative (N) type semiconductor. When sunlight shines on a solar cell with this structure, holes and electrons are generated in the semiconductor due to the energy of the incident sunlight. At this time, based on the electric field generated in the PN junction, holes (+) move to the P-type semiconductor and electrons (-) move to the N-type semiconductor, thus generating a potential and generating electricity.

[0004] As described above, each of the holes (+) and electrons (-) generated by sunlight incident on the solar cell moves through the transparent conductive layer and electrodes included in the solar cell. The electrodes may be disposed in each of the upper and lower surfaces of the solar cell substrate, or may be disposed in one of the upper and lower surfaces of the solar cell substrate, and the current may move based on the holes (+) and electrons (-) that have moved through the respective electrodes.

[0005] In related fields, when manufacturing solar cells using perovskite compounds, the cavity of the manufactured solar cell is cleaned via a wetting process after the process is stopped and the cavity is disassembled, in order to clean the cavity after the solar cell manufacturing process. Furthermore, to improve the yield of processes such as cavity reassembly, the equipment is disassembled and reassembled using cavity cleaning methods in order to manufacture solar cells again. This leads to an increase in total process time over time. Therefore, there is a problem of increased process time and consequently increased manufacturing costs. Summary of the Invention

[0006] Technical issues

[0007] The present invention addresses the aforementioned problems and provides a cavity cleaning method that can clean the interior of a cavity using an in-situ process without disassembling the cavity, thus preventing excessive time spent cleaning the cavity.

[0008] Technical solution

[0009] To achieve the above objectives, the present invention provides a method for cleaning a cavity used to form a perovskite compound, the method comprising the steps of exposing the interior of the cavity to a hydrogen (H) gas plasma and the steps of exposing the interior of the cavity to an oxygen (O) gas plasma, wherein the step of exposing the interior of the cavity to an oxygen (O) gas plasma is performed after the step of exposing the interior of the cavity to the hydrogen (H) gas plasma.

[0010] The present invention provides a cavity cleaning method, wherein the perovskite compound comprises a compound of ABX3 (wherein A comprises a monovalent organic cation of an amine-based compound or a monovalent organic cation of an amidine-based compound, B comprises a divalent cation, and X comprises at least one halogen compound).

[0011] The present invention provides a method for cleaning a cavity used to form a perovskite compound, the method comprising the steps of exposing the interior of the cavity to a hydrogen (H) gas plasma and supplying a gas containing hexafluoroacetylacetone (Hhfac) into the cavity.

[0012] The present invention provides a cavity cleaning method, wherein the perovskite compound comprises a CABX3 compound (wherein, A comprises a monovalent organic cation of an amine compound or a monovalent organic cation of an amidine compound, B comprises a divalent cation, C comprises at least one alkali metal, and X comprises at least one halogen compound).

[0013] The present invention provides a cavity cleaning method, wherein the step of supplying gas containing hexafluoroacetylacetone (Hhfac) includes heating the cavity to above 100°C.

[0014] The present invention provides a cavity cleaning method, wherein the step of supplying a gas containing hexafluoroacetylacetone (Hhfac) includes the step of exposing the interior of the cavity to a gas plasma containing hexafluoroacetylacetone (Hhfac).

[0015] The present invention provides a cavity cleaning method, which further includes the step of exposing the interior of the cavity to an oxygen (O) gas plasma.

[0016] The present invention provides a method for cleaning a cavity, wherein, after the step of exposing the interior of the cavity to a hydrogen (H) gas plasma, a step of plasma treatment of an oxygen (O) gas is performed to provide an oxygen (O) gas plasma.

[0017] The present invention provides a cavity cleaning method, wherein the perovskite compound comprises a compound of CBX3 (wherein B comprises a divalent cation, X comprises at least one halogen compound, and C comprises at least one alkali metal).

[0018] The present invention provides a cavity cleaning method, wherein the step of supplying gas containing hexafluoroacetylacetone (Hhfac) includes heating the cavity to above 100°C.

[0019] The present invention provides a cavity cleaning method, wherein the step of supplying a gas containing hexafluoroacetylacetone (Hhfac) includes the step of exposing the interior of the cavity to a gas plasma containing hexafluoroacetylacetone (Hhfac).

[0020] The present invention provides a method for cleaning a cavity used to form a perovskite compound, the method comprising the steps of exposing the interior of the cavity to a hydrogen (H) gas plasma and the steps of exposing the interior of the cavity to an oxygen (O) gas plasma, wherein the step of exposing the interior of the cavity to a hydrogen (H) gas plasma is performed after the step of exposing the interior of the cavity to an oxygen (O) gas plasma.

[0021] The present invention provides a cavity cleaning method, wherein the perovskite compound comprises a compound of ABX3 (wherein, A comprises a monovalent organic cation of an amine compound or a monovalent organic cation of an amidine compound, B comprises a divalent cation, and X comprises at least one halogen compound).

[0022] The present invention provides a cavity cleaning method, which further includes the step of supplying a gas containing hexafluoroacetylacetone (Hhfac) into the cavity.

[0023] The present invention provides a cavity cleaning method, wherein the perovskite compound comprises a CABX3 compound (wherein, A comprises a monovalent organic cation of an amine compound or a monovalent organic cation of an amidine compound, B comprises a divalent cation, C comprises at least one alkali metal, and X comprises at least one halogen compound).

[0024] Beneficial effects

[0025] According to the present invention, the following effects can be achieved.

[0026] According to embodiments of the present invention, since a separate disassembly or reassembly step for cleaning the cavity is not required, delays in the entire process can be prevented. In other words, the cavity cleaning process can be performed in-situ without the need for separate cavity disassembly, thus increasing the productivity of solar cells.

[0027] The effects of the present invention are not limited to those described above, but those skilled in the art will clearly understand from the following description other effects not mentioned herein. Attached Figure Description

[0028] Figure 1This is a cross-sectional view of a solar cell according to an embodiment of the present invention.

[0029] Figure 2a This is a block diagram of a cavity cleaning method according to an embodiment of the present invention.

[0030] Figure 2b This is a block diagram of a cavity cleaning method according to another embodiment of the present invention.

[0031] Figure 3 This is a block diagram of a cavity cleaning method according to another embodiment of the present invention.

[0032] Figure 4 This is a block diagram of a cavity cleaning method according to another embodiment of the present invention.

[0033] Figure 5 This is a block diagram of a cavity cleaning method according to another embodiment of the present invention.

[0034] Figure 6 This is a block diagram of a cavity cleaning method according to another embodiment of the present invention.

[0035] Figure 7a This is a block diagram of a cavity cleaning method according to another embodiment of the present invention.

[0036] Figure 7b This is a block diagram of a cavity cleaning method according to another embodiment of the present invention.

[0037] Figure 8a This is a block diagram of a cavity cleaning method according to another embodiment of the present invention.

[0038] Figure 8b This is a block diagram of a cavity cleaning method according to another embodiment of the present invention.

[0039] Figure 9 This is a schematic diagram of a cavity that is the target of a cavity cleaning method according to an embodiment of the present invention. Detailed Implementation

[0040] When a hydrogen (H2) plasma is formed inside a vacuum chamber, halogen materials remaining in the chamber can react with hydrogen (H) and thus transform into a gaseous state. For example, the halogen material can be a material containing bromine (Br) or iodine (I), and the halogen material can react with hydrogen (H) to form hydrogen bromide (HBr) or hydrogen iodide (HI). In this case, hydrogen bromide (HBr) or hydrogen iodide (HI) can be in a gaseous state at room temperature and atmospheric pressure.

[0041] Subsequently, in step S150, where an oxygen (O2) or ozone (O3) plasma is formed inside the cavity, material remaining in the vacuum cavity after the formation of the perovskite film can be removed. Specifically, by forming an oxygen (O) plasma, the interior of the cavity can be exposed to the oxygen (O) gas plasma, thus removing at least one of the amine or amidine compounds remaining inside the cavity or on the cavity wall surface after the formation of the perovskite film, as well as hydrocarbons formed by the reaction of a portion of the amine or amidine compounds produced after step S140 (forming a hydrogen (H2) plasma inside the cavity) with hydrogen (H).

[0042] More specifically, when oxygen (O2) or ozone (O3) plasma is formed in a vacuum cavity, carbon dioxide (CO2) can be formed by reacting oxygen (O) with amine or amidine compounds remaining after step S140, in which hydrogen (H2) plasma is formed inside the cavity. For example, based on oxygen (O2) or ozone (O3) plasma, other methylamine or formamidinium remaining in the vacuum cavity can react with oxygen (O) and thus be converted into carbon dioxide (CO2), ammonia (NH3), hydrogen (H2), nitrogen (N2), and water (H2O).

[0043] Furthermore, in step S140, where hydrogen (H) plasma is formed inside the cavity, methylamine or formamidinium reacts with hydrogen (H) and remains in the vacuum cavity as hydrocarbons. In step S150, where oxygen (O2) or ozone (O3) plasma is formed inside the cavity, the hydrocarbons remaining in the vacuum cavity can react with oxygen (O) to form carbon dioxide (CO2) and water (H2O).

[0044] According to embodiments of the present invention, after forming a solar cell containing a perovskite thin film of ABX3, impurities remaining in the vacuum cavity can be removed in gaseous form by hydrogen (H2) plasma and oxygen (O2) plasma. Therefore, since a separate disassembly or reassembly step for cleaning the cavity is not required, process delays can be prevented. In other words, the cavity cleaning process can be performed in situ without the need for separate cavity disassembly, thus increasing the productivity of the solar cell.

[0045] Figure 2b This is a block diagram of a cavity cleaning method according to another embodiment of the present invention. Except for the sequence of step S160, which forms an oxygen (O2) or ozone (O3) plasma inside the cavity, and step S170, which forms a hydrogen (H2) plasma inside the cavity, Figure 2b Implementation and Figure 2a The embodiments are the same, so the different configurations will be described in detail.

[0046] like Figure 2b As shown, a cavity cleaning method according to another embodiment of the present invention includes a step S110 of loading a substrate into a cavity, a step S120 of forming a perovskite thin film containing an ABX3 compound on the substrate, a step S130 of unloading the substrate from the cavity, a step S160 of forming an oxygen (O2) or ozone (O3) plasma inside the cavity, and a step S170 of forming a hydrogen (H2) plasma inside the cavity.

[0047] According to another embodiment of the invention, impurities remaining in the vacuum cavity after forming a solar cell containing an ABX3-containing perovskite thin film can be removed in gaseous form using hydrogen (H2) plasma and oxygen (O2) plasma. Therefore, since a separate disassembly or reassembly step for cleaning the cavity is not required, process delays can be prevented. In other words, the cavity cleaning process can be performed in situ without the need for separate cavity disassembly, thus increasing the productivity of the solar cell.

[0048] Figure 3 This is a block diagram of a cavity cleaning method according to another embodiment of the present invention.

[0049] like Figure 3 As shown, the cavity cleaning method according to an embodiment of the present invention includes a step S210 of loading a substrate into a cavity, a step S220 of forming a perovskite thin film containing a CBX3 compound on the substrate, a step S230 of unloading the substrate from the cavity, a step S241 of forming a hydrogen (H2) plasma inside the cavity, and a step S242 of supplying a gas containing hexafluoroacetylacetone (Hhfac) into the cavity. Furthermore, the steps S210 of loading the substrate into the cavity and S230 of unloading the substrate from the cavity are similar to... Figure 2a The above description is the same, therefore the repeated descriptions are omitted below.

[0050] In step S220, which involves forming a perovskite thin film containing a CBX3 compound on a substrate, a perovskite thin film containing a CBX3 compound can be formed on a substrate disposed in a vacuum chamber.

[0051] CBX3 compounds and Figure 1 The above description is the same, so the repeated description is omitted.

[0052] According to embodiments of the present invention, the C of the CBX3 compound may contain at least one alkali metal. In this case, C may be, for example, a cesium (Cs) cation. The B of the CBX3 compound may be an organometallic compound containing lead (Pb), and furthermore, X may contain I. a Br bIn this case, each of a and b can be greater than 0, and a + b = 3.

[0053] According to embodiments of the present invention, the CBX3 compound may contain, for example, CsPbI3, CsPbBr3 and CsPbBr a I b One of the compounds in [the text].

[0054] If formed in this way, a matrix containing CsPbI3, CsPbBr3, and CsPbBr can be formed on the substrate. a I b A perovskite thin film of a compound.

[0055] In step S241, which involves forming a hydrogen (H2) plasma inside the cavity, residual material remaining after the formation of the perovskite thin film inside the vacuum cavity can be removed. Specifically, by forming a hydrogen (H) plasma, the interior of the cavity can be exposed to the hydrogen (H) gas plasma, thereby removing at least one of halogen materials and organometallic compounds containing divalent positive ions that remain inside the cavity or on the cavity wall surface after the formation of the perovskite thin film.

[0056] When hydrogen (H2) plasma is formed in a vacuum chamber, organometallic compounds containing divalent positive ions remaining in the chamber can react with hydrogen (H) and thus be converted into gas. Subsequently, when hydrogen (H2) plasma is formed in a vacuum chamber, halogen materials remaining in the chamber can react with hydrogen (H) and thus be converted into gas.

[0057] Furthermore, examples of organometallic compounds and halogen materials containing divalent positive ions being converted into gases via hydrogen (H2) plasma are also included. Figure 2a The examples are the same, so their repeated descriptions are omitted.

[0058] Subsequently, in step S242, supplying a gas containing hexafluoroacetylacetone (Hhfac) into the cavity, material remaining after the formation of the perovskite film inside the vacuum cavity can be removed. Specifically, by supplying a gas containing hexafluoroacetylacetone (Hhfac) into the cavity, at least one alkali metal remaining inside the cavity or on the cavity wall surface after the formation of the perovskite film can be removed.

[0059] In detail, when a gas containing hexafluoroacetylacetone (Hhfac) is supplied to a vacuum chamber, at least one alkali metal remaining in the chamber can react with the gas containing hexafluoroacetylacetone (Hhfac), and thus can be removed in the gaseous form of metallic hexafluoroacetylacetone (Mhfac) (where M represents an alkali metal cation). For example, cesium (Cs) cations remaining in the vacuum chamber can react with hexafluoroacetylacetone (Hhfac), and thus can be converted into cesium hexafluoroacetylacetone (Cs(hfac)). In this case, cesium hexafluoroacetylacetone (Cs(hfac)) can be in the gaseous state at room temperature and atmospheric pressure.

[0060] According to another embodiment of the present invention, in step S242, where a gas containing hexafluoroacetylacetone (Hhfac) is supplied into the cavity, the gas can be supplied, and then the interior of the cavity can be heated to a temperature of 100°C or higher. In this case, the reactivity between the gas containing hexafluoroacetylacetone (Hhfac) and the alkali metal material can be good, thus the alkali metal material in the cavity can be easily removed.

[0061] Furthermore, according to another embodiment of the present invention, in step S242, where a gas containing hexafluoroacetylacetone (Hhfac) is supplied to the cavity, a plasma containing hexafluoroacetylacetone (Hhfac) can be formed, thus exposing the interior of the cavity to the gas plasma containing hexafluoroacetylacetone (Hhfac). In this case, the reactivity between the gas containing hexafluoroacetylacetone (Hhfac) and the alkali metal material can be good, thus making it easier to remove the alkali metal material from the cavity.

[0062] However, the present invention is not limited thereto, and in step S242, in which the gas containing hexafluoroacetylacetone (Hhfac) is supplied to the cavity, the gas containing hexafluoroacetylacetone (Hhfac) may be supplied to the cavity without forming plasma or at a temperature less than 100°C.

[0063] According to embodiments of the present invention, impurities remaining in the vacuum cavity after forming a solar cell containing a perovskite thin film of CBX3 can be removed in gaseous form by hydrogen (H2) plasma and hexafluoroacetylacetone (Hhfac). Therefore, since a separate disassembly or reassembly step for cleaning the cavity is not required, process delays can be prevented. In other words, the cavity cleaning process can be performed in situ without the need for separate cavity disassembly, thus increasing the productivity of solar cells.

[0064] Figure 4This is a block diagram of a cavity cleaning method according to another embodiment of the present invention. Except for the sequence of step S251, which supplies a gas containing hexafluoroacetylacetone (Hhfac) into the cavity, and step S252, which forms a hydrogen (H2) plasma inside the cavity, Figure 4 Implementation examples and Figure 3 The embodiments are the same, so the different configurations will be described in detail.

[0065] like Figure 4 As shown, the cavity cleaning method according to an embodiment of the present invention includes step S210 of loading a substrate into a cavity, step S220 of forming a perovskite thin film containing a CBX3 compound on the substrate, step S230 of unloading the substrate from the cavity, step S251 of supplying a gas containing hexafluoroacetylacetone (Hhfac) into the cavity, and step S252 of forming a hydrogen (H2) plasma inside the cavity.

[0066] According to another embodiment of the present invention, step S251, which involves supplying a gas containing hexafluoroacetylacetone (Hhfac) into the cavity, can be performed before step S252, which involves forming a hydrogen (H2) plasma inside the cavity.

[0067] Therefore, when a gas containing hexafluoroacetylacetone (Hhfac) is supplied to a vacuum chamber, at least one alkali metal remaining in the chamber can react with the Hhfac-containing gas and thus be removed in the gaseous form of metallic hexafluoroacetylacetone (Mhfac) (where M represents an alkali metal cation). Furthermore, examples of alkali metals being converted into gas by the Hhfac-containing gas are as follows... Figure 3 The examples are the same, so their repeated descriptions are omitted.

[0068] Subsequently, step S252, which involves forming a hydrogen (H2) plasma inside the cavity, can be performed. In this case, based on the hydrogen (H2) plasma, organometallic compounds containing divalent cations remaining in the cavity can react with hydrogen (H) and thus be converted into a gas, and halogen materials remaining in the cavity can also react with hydrogen (H) and thus be converted into a gaseous state. Furthermore, examples of organometallic compounds containing divalent cations and halogen materials reacting with hydrogen (H) and thus being converted into a gaseous state by the hydrogen (H2) plasma are provided. Figure 3 The above description is the same, so the repeated description is omitted.

[0069] According to embodiments of the present invention, impurities remaining in the vacuum cavity after forming a solar cell containing a CBX3-containing perovskite thin film can be removed in gaseous form using hydrogen (H2) plasma and hexafluoroacetylacetone (Hhfac). Therefore, since a separate disassembly or reassembly step for cleaning the cavity is not required, delays in the entire process can be prevented. In other words, the cavity cleaning process can be performed in situ without the need for separate cavity disassembly, thus increasing the productivity of the solar cell.

[0070] Figure 5 This is a block diagram of a cavity cleaning method according to another embodiment of the present invention.

[0071] like Figure 5 As shown, the cavity cleaning method according to an embodiment of the present invention includes a step S310 of loading a substrate into a cavity, a step S320 of forming a perovskite thin film containing a CABX3 compound on the substrate, a step S330 of unloading the substrate from the cavity, a step S341 of forming a hydrogen (H2) plasma inside the cavity, a step S342 of forming an oxygen (O2) or ozone (O3) plasma inside the cavity, and a step S343 of supplying a gas containing hexafluoroacetylacetone (Hhfac) into the cavity. Furthermore, the steps S310 of loading the substrate into the cavity and S330 of unloading the substrate from the cavity are similar to... Figure 2a The above description is the same, so the repeated description is omitted.

[0072] In step S320, a perovskite thin film containing a CABX3 compound is formed on a substrate disposed in a vacuum chamber.

[0073] CABX3 compounds and Figure 1 The above description is the same, so the repeated description is omitted.

[0074] According to embodiments of the present invention, A in the CABX3 compound can be either an amine compound or an amidine compound. For example, A can contain formamidinium (NH₂CHNH) (FA), and C can contain at least one alkali metal. In this case, C can be, for example, a cesium (Cs) cation.

[0075] Furthermore, in the CABX3 compound, B can be an organometallic compound containing lead (Pb), and X can contain I. a Br b In this case, each of a and b can be greater than or equal to 0, and a + b = 3.

[0076] According to embodiments of the present invention, the CABX3 compound may contain, for example, CsFAPbI3, CsFAPbBr3 and CsFAPbBr a I b One of the compounds in [the text].

[0077] Formed in this manner, containing CsFAPbI3, CsFAPbBr3, and CsFAPbBr a I b A perovskite thin film of one of the compounds can be formed on a substrate.

[0078] In step S341, which involves forming a hydrogen (H2) plasma inside the cavity, residual material remaining after the formation of the perovskite thin film inside the vacuum cavity can be removed. Specifically, by forming a hydrogen (H) plasma, the interior of the cavity can be exposed to the hydrogen (H) gas plasma, thereby removing at least one of the following: amine compounds or amidine compounds, organometallic compounds containing divalent cations, and halogen materials remaining inside the cavity or on the cavity wall surface after the formation of the perovskite thin film.

[0079] Furthermore, the method for removing amine compounds or amidine compounds, organometallic compounds containing divalent positive ions, and halogen materials by using hydrogen (H2) plasma is similar to the method described above. Figure 2a The situation is the same, so its repeated description is omitted.

[0080] According to another embodiment of the present invention, in step S341 of forming a hydrogen (H2) plasma inside the cavity, a portion of the amine compounds or amidine compounds remaining in the cavity can react with hydrogen (H) to form hydrocarbons, and other amine compounds or amidine compounds remaining in the cavity can remain in the cavity, and organometallic compounds containing divalent positive ions remaining in the cavity can react with hydrogen (H) to be converted into gas, and halogen materials remaining in the cavity can react with hydrogen (H) to be converted into gas.

[0081] Subsequently, in step S342, where an oxygen (O2) or ozone (O3) plasma is formed inside the cavity, material remaining in the vacuum cavity after the formation of the perovskite film can be removed. Specifically, by forming an oxygen (O) plasma, the interior of the cavity can be exposed to the oxygen (O) gas plasma, thus removing amine or amidine compounds remaining inside the cavity or on the cavity wall surface after the formation of the perovskite film, as well as hydrocarbons formed by the reaction of some of the amine or amidine compounds produced after step S341 (where a hydrogen (H2) plasma is formed inside the cavity) with hydrogen (H), and at least one of at least one alkali metal.

[0082] Furthermore, the method of forming oxygen (O2) plasma inside the cavity to remove amines or amidines and hydrocarbons is similar to... Figure 2a Since they are the same, their repeated descriptions are omitted.

[0083] According to another embodiment of the invention, by forming an oxygen (O) plasma inside the cavity, the plasma can react with a portion of at least one alkali metal remaining in the cavity, thus forming a metal oxide. For example, the at least one alkali metal can be cesium (Cs), and cesium (Cs) can react with oxygen (O), thus forming cesium oxide (Cs₂O). Furthermore, other cesium (Cs) that have not reacted with oxygen (O) can remain intact in the cavity.

[0084] Subsequently, in step S343, supplying a gas containing hexafluoroacetylacetone (Hhfac) into the cavity, residual material after the formation of the perovskite film inside the vacuum cavity can be removed. Furthermore, examples of alkali metals being converted into gas by passing a gas containing hexafluoroacetylacetone (Hhfac) are also included. Figure 3 The examples are the same, so their repeated descriptions are omitted.

[0085] According to another embodiment of the invention, the metal oxide formed in step S342, by forming an oxygen (O2) or ozone (O3) plasma inside the cavity, can react with a gas containing hexafluoroacetylacetone (Hhfac) and thus be removed. For example, cesium oxide (Cs2O) remaining in the cavity can react with hexafluoroacetylacetone (Hhfac) to form cesium hexafluoroacetylacetone (Cs(hfac)). In this case, cesium hexafluoroacetylacetone (Cs(hfac)) can be in a gaseous state.

[0086] According to embodiments of the present invention, impurities remaining in the vacuum cavity after forming a solar cell containing a CABX3-containing perovskite thin film can be removed in gaseous form using hydrogen (H2) plasma, oxygen (O2) plasma, and hexafluoroacetylacetone (Hhfac). Therefore, since a separate disassembly or reassembly step for cleaning the cavity is not required, process delays can be prevented. In other words, the cavity cleaning process can be performed in situ without the need for separate cavity disassembly, thus increasing the productivity of the solar cell.

[0087] Figure 6 This is a block diagram of a cavity cleaning method according to another embodiment of the present invention.

[0088] Apart from the sequence of step S352, which supplies a gas containing hexafluoroacetylacetone (Hhfac) into the cavity, and step S353, which forms an oxygen (O2) or ozone (O3) plasma inside the cavity, Figure 6 Implementation examples and Figure 5 The embodiments are the same, so the different configurations will be described in detail.

[0089] like Figure 6 As shown, the cavity cleaning method according to an embodiment of the present invention includes step S310 of loading a substrate into a cavity, step S320 of forming a perovskite thin film containing a CABX3 compound on the substrate, step S330 of unloading the substrate from the cavity, step S351 of forming a hydrogen (H2) plasma inside the cavity, step S352 of supplying a gas containing hexafluoroacetylacetone (Hhfac) into the cavity, and step S353 of forming an oxygen (O2) or ozone (O3) plasma inside the cavity.

[0090] According to another embodiment of the present invention, step S352, which involves supplying a gas containing hexafluoroacetylacetone (Hhfac) into the cavity, can be performed before step S353, which involves forming an oxygen (O2) or ozone (O3) plasma inside the cavity.

[0091] Therefore, in step S352, where the gas containing hexafluoroacetylacetone (Hhfac) is supplied to the cavity, at least one alkali metal remaining in the cavity can react with the gas containing hexafluoroacetylacetone (Hhfac), and thus can be removed in the gaseous form of metallic hexafluoroacetylacetone (Mhfac) (where M represents an alkali metal cation). For example, cesium (Cs) cations remaining in the vacuum cavity can react with hexafluoroacetylacetone (Hhfac), and thus can be converted into cesium hexafluoroacetylacetone (Cs(hfac)). In this case, cesium hexafluoroacetylacetone (Cs(hfac)) can be in the gaseous state.

[0092] Subsequently, step S353, which involves forming an oxygen (O2) or ozone (O3) plasma inside the cavity, can be performed. In this case, based on the oxygen (O2) plasma, one of the amine compounds or amidine compounds, and one of the hydrocarbons formed from a portion of the amine compounds or amidine compounds after step S351, which involves forming a hydrogen (H2) plasma inside the cavity, can be removed. Furthermore, examples of amine compounds or amidine compounds and hydrocarbons formed from amine compounds or amidine compounds reacting with oxygen (O) and thus being converted into a gaseous state by the oxygen (O2) plasma are also provided. Figure 4 The above description is the same, so the repeated description is omitted.

[0093] According to embodiments of the present invention, impurities remaining in the vacuum cavity after forming a solar cell containing a CABX3-containing perovskite thin film can be removed in gaseous form using hydrogen (H2) plasma, oxygen (O2) plasma, and hexafluoroacetylacetone (Hhfac). Therefore, since a separate disassembly or reassembly step for cleaning the cavity is not required, process delays can be prevented. In other words, the cavity cleaning process can be performed in situ without the need for separate cavity disassembly, thus increasing the productivity of the solar cell.

[0094] Figure 7a This is a block diagram of a cavity cleaning method according to another embodiment of the present invention.

[0095] Apart from the sequence of steps S361 (supplying a gas containing hexafluoroacetylacetone (Hhfac) into the cavity), S362 (forming a hydrogen (H2) plasma inside the cavity), and S363 (forming an oxygen (O2) or ozone (O3) plasma inside the cavity), Figure 7a Implementation examples and Figure 5 The embodiments are the same, so the different configurations will be described in detail.

[0096] like Figure 7a As shown, the cavity cleaning method according to an embodiment of the present invention includes step S310 of loading a substrate into a cavity, step S320 of forming a perovskite thin film containing a CABX3 compound on the substrate, step S330 of unloading the substrate from the cavity, step S361 of supplying a gas containing hexafluoroacetylacetone (Hhfac) into the cavity, step S362 of forming a hydrogen (H2) plasma inside the cavity, and step S363 of forming an oxygen (O2) or ozone (O3) plasma inside the cavity.

[0097] According to another embodiment of the present invention, step S361, which supplies gas containing hexafluoroacetylacetone (Hhfac) into the cavity, can be performed before step S362, which forms hydrogen (H2) plasma inside the cavity, and step S363, which forms oxygen (O2) or ozone (O3) plasma inside the cavity.

[0098] According to embodiments of the present invention, impurities remaining in the vacuum cavity after forming a solar cell containing a CABX3-containing perovskite thin film can be removed in gaseous form using hydrogen (H2) plasma, oxygen (O2) plasma, and hexafluoroacetylacetone (Hhfac). Therefore, since a separate disassembly or reassembly step for cleaning the cavity is not required, process delays can be prevented. In other words, the cavity cleaning process can be performed in situ without the need for separate cavity disassembly, thus increasing the productivity of the solar cell.

[0099] Figure 7b This is a block diagram of a cavity cleaning method according to another embodiment of the present invention. Except for the sequence of step S372, which forms oxygen (O2) or ozone (O3) plasma inside the cavity, and step S373, which forms hydrogen (H2) plasma inside the cavity, Figure 7b Implementation examples and Figure 7a The embodiments are the same, so the different configurations will be described in detail.

[0100] like Figure 7b As shown, the cavity cleaning method according to an embodiment of the present invention includes step S310 of loading a substrate into a cavity, step S320 of forming a perovskite thin film containing a CABX3 compound on the substrate, step S330 of unloading the substrate from the cavity, step S371 of supplying a gas containing hexafluoroacetylacetone (Hhfac) into the cavity, step S372 of forming an oxygen (O2) or ozone (O3) plasma inside the cavity, and step S373 of forming a hydrogen (H2) plasma inside the cavity.

[0101] According to embodiments of the present invention, impurities remaining in the vacuum cavity after forming a solar cell containing a CABX3-containing perovskite thin film can be removed in gaseous form using hydrogen (H2) plasma, oxygen (O2) plasma, and hexafluoroacetylacetone (Hhfac). Therefore, since a separate disassembly or reassembly step for cleaning the cavity is not required, process delays can be prevented. In other words, the cavity cleaning process can be performed in situ without the need for separate cavity disassembly, thus increasing the productivity of the solar cell.

[0102] Figure 8a This is a block diagram of a cavity cleaning method according to another embodiment of the present invention. Except for the sequence of steps S381 (forming oxygen (O2) or ozone (O3) plasma inside the cavity), S382 (forming hydrogen (H2) plasma inside the cavity), and S383 (supplying a gas containing hexafluoroacetylacetone (Hhfac) into the cavity), Figure 8a Implementation examples and Figure 7a The embodiments are the same, so the different configurations will be described in detail.

[0103] like Figure 8aAs shown, the cavity cleaning method according to an embodiment of the present invention includes step S310 of loading a substrate into a cavity, step S320 of forming a perovskite thin film containing a CABX3 compound on the substrate, step S330 of unloading the substrate from the cavity, step S381 of forming an oxygen (O2) or ozone (O3) plasma inside the cavity, step S382 of forming a hydrogen (H2) plasma inside the cavity, and step S383 of supplying a gas containing hexafluoroacetylacetone (Hhfac) into the cavity.

[0104] According to embodiments of the present invention, impurities remaining in the vacuum cavity after forming a solar cell containing a CABX3-containing perovskite thin film can be removed in gaseous form using hydrogen (H2) plasma, oxygen (O2) plasma, and hexafluoroacetylacetone (Hhfac). Therefore, since a separate disassembly or reassembly step for cleaning the cavity is not required, process delays can be prevented. In other words, the cavity cleaning process can be performed in situ without the need for separate cavity disassembly, thus increasing the productivity of the solar cell.

[0105] Figure 8b This is a block diagram of a cavity cleaning method according to another embodiment of the present invention.

[0106] Apart from the sequence of step S392, which supplies gas containing hexafluoroacetylacetone (Hhfac) into the cavity, and step S393, which forms hydrogen (H2) plasma inside the cavity, Figure 8b Implementation examples and Figure 8a The embodiments are the same, so the different configurations will be described in detail.

[0107] like Figure 8b As shown, the cavity cleaning method according to an embodiment of the present invention includes step S310 of loading a substrate into a cavity, step S320 of forming a perovskite thin film containing a CABX3 compound on the substrate, step S330 of unloading the substrate from the cavity, step S391 of forming an oxygen (O2) or ozone (O3) plasma inside the cavity, step S392 of supplying a gas containing hexafluoroacetylacetone (Hhfac) into the cavity, and step S393 of forming a hydrogen (H2) plasma inside the cavity.

[0108] According to embodiments of the present invention, impurities remaining in the vacuum cavity after forming a solar cell containing a CABX3-containing perovskite thin film can be removed in gaseous form using hydrogen (H2) plasma, oxygen (O2) plasma, and hexafluoroacetylacetone (Hhfac). Therefore, since a separate disassembly or reassembly step for cleaning the cavity is not required, process delays can be prevented. In other words, the cavity cleaning process can be performed in situ without the need for separate cavity disassembly, thus increasing the productivity of the solar cell.

[0109] Figure 9 This is a schematic diagram illustrating the objective of a cavity cleaning method according to an embodiment of the present invention.

[0110] According to an embodiment of the present invention, the solar cell deposition apparatus is an apparatus for forming the aforementioned perovskite compound layer on a substrate W. The substrate W may include a semiconductor substrate.

[0111] like Figure 9 As shown, the solar cell deposition apparatus according to an embodiment of the present invention includes a cavity 10, a cavity cover 20, a support 30, a gas injection unit 40, and gas supply units 50a to 50d.

[0112] The cavity 10 provides a reaction space for the deposition process.

[0113] The exhaust port 12 for venting the reaction space can be located in a bottom surface of the cavity 10.

[0114] The cavity cover 20 is installed on top of the cavity 10 to seal the reaction space.

[0115] The cavity cover 20 can be connected to a gas supply unit 50a to 50d that supplies gas for the deposition process.

[0116] The support member 30 is installed in the cavity 10 and supports the substrate W loaded from the outside. The support member 30 can be connected to the lifting unit 32 and can be raised or lowered by the lifting unit 32.

[0117] The gas injection unit 40 can be installed below the cavity cover 20 and opposite to the support member 30. A gas diffusion space 42 for the diffusion of gas supplied from the gas supply units 50a to 50d that penetrate the cavity cover 20 can be formed between the gas injection unit 40 and the cavity cover 20.

[0118] The gas injection unit 40 can uniformly inject the gas supplied from the gas supply units 50a to 50d into the entire portion of the reaction space through a plurality of gas injection ports 44 connected to the gas diffusion space 42.

[0119] Gas supply units 50a to 50d may include those for supplying the above-mentioned gas. Figure 1 The invention comprises a first gas supply unit 50a for alkali metal C, a second gas supply unit 50b for supplying amine organic compounds or amidine organic compounds A, a third gas supply unit 50c for supplying organometallic compounds B containing divalent positive ions, and a fourth gas supply unit 50d for supplying halogen material X. Each of the first gas supply units 50a to the fourth gas supply unit 50d may include individual pipes, which may be assembled into one and connected to the cavity cover 20. However, the invention is not limited thereto; each of the individual pipes may not be assembled into one and may be connected to the cavity cover 20.

[0120] In the foregoing, embodiments of the present invention have been described in detail with reference to the accompanying drawings. However, the present invention is not limited to these embodiments and can be modified in various ways without departing from the spirit of the invention. Therefore, it should be understood that the above embodiments are merely exemplary and not restrictive in each respect. It should be explained that the scope of the present invention is defined by the following claims rather than the embodiments, and the scope and meaning of the claims, as well as all variations and modifications derived from their equivalents, are included within the scope of the present invention.

Claims

1. A method for cleaning a cavity used to form a perovskite compound, the method comprising: The step of exposing the interior of the cavity to a hydrogen (H) gas plasma; as well as The step of exposing the interior of the cavity to an oxygen (O) gas plasma. The step of exposing the interior of the cavity to the hydrogen (H) gas plasma is followed by the step of exposing the interior of the cavity to the oxygen (O) gas plasma.

2. The method as described in claim 1, wherein, The perovskite compound contains ABX3 compounds, and Wherein, A contains a monovalent organic cation of an amine compound or a monovalent organic cation of an amidine compound, B contains a divalent cation, and X contains at least one halogen compound.

3. A method for cleaning a cavity used to form a perovskite compound, the method comprising: The step of exposing the interior of the cavity to a hydrogen (H) gas plasma; as well as The step of supplying a gas containing hexafluoroacetylacetone (Hhfac) into the cavity.

4. The method of claim 3, wherein, The perovskite compound includes a CABX3 compound, and Wherein, A contains a monovalent organic cation of an amine compound or a monovalent organic cation of an amidine compound, B contains a divalent cation, C contains at least one alkali metal, and X contains at least one halogen compound.

5. The method of claim 4, wherein, The step of supplying the gas containing hexafluoroacetylacetone (Hhfac) includes heating the cavity to above 100°C.

6. The method of claim 4, wherein, The step of supplying the gas containing hexafluoroacetylacetone (Hhfac) includes exposing the interior of the cavity to a gas plasma containing hexafluoroacetylacetone (Hhfac).

7. The method of claim 4, further comprising the step of exposing the interior of the cavity to an oxygen (O) gas plasma.

8. The method of claim 7, wherein, After the step of exposing the interior of the cavity to the hydrogen (H) gas plasma, a step of plasma treatment of the oxygen (O) gas is performed to provide the oxygen (O) gas plasma.

9. The method of claim 3, wherein, The perovskite compound contains CBX3 compounds, and Wherein, B contains a divalent positive ion, X contains at least one halogen compound, and C contains at least one alkali metal.

10. The method of claim 9, wherein, The step of supplying the gas containing hexafluoroacetylacetone (Hhfac) includes heating the cavity to above 100°C.

11. The method of claim 9, wherein, The step of supplying the gas containing hexafluoroacetylacetone (Hhfac) includes exposing the interior of the cavity to a gas plasma containing hexafluoroacetylacetone (Hhfac).

12. A method for cleaning a cavity used to form a perovskite compound, the method comprising: The step of exposing the interior of the cavity to a hydrogen (H) gas plasma; as well as The step of exposing the interior of the cavity to an oxygen (O) gas plasma. The step of exposing the interior of the cavity to the oxygen (O) gas plasma is followed by the step of exposing the interior of the cavity to the hydrogen (H) gas plasma.

13. The method of claim 12, wherein, The perovskite compound contains ABX3 compounds, and Wherein, A contains a monovalent organic cation of an amine compound or a monovalent organic cation of an amidine compound, B contains a divalent cation, and X contains at least one halogen compound.

14. The method of claim 12, further comprising the step of supplying a gas containing hexafluoroacetylacetone (Hhfac) into the cavity.

15. The method of claim 14, wherein, The perovskite compound includes a CABX3 compound, and Wherein, A contains a monovalent organic cation of an amine compound or a monovalent organic cation of an amidine compound, B contains a divalent cation, C contains at least one alkali metal, and X contains at least one halogen compound.

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