Pit base heat radiation temperature control miniature constant temperature crystal oscillator packaging structure

Abstract

According to the technical scheme, the pit base heat radiation temperature control miniature constant temperature crystal oscillator packaging structure is characterized in that the pit base heat radiation temperature control miniature constant temperature crystal oscillator packaging structure comprises a base, an ASIC chip is arranged on the bottom face in the base, and a heat radiation enhancement layer is arranged above the heating face of the ASIC chip; the wafer is arranged in the base, and the heat insulation part is arranged on the top surface of the base; according to the limiting component arranged in the base, when the ASIC chip works, heat emitted by the heating surface of the ASIC chip can irradiate a wafer through the heat radiation enhancement layer, so that the wafer is heated, heating and temperature control are performed on the wafer, and meanwhile, when the heat radiation enhancement layer emits heat radiation, the heat radiation enhancement layer can radiate the heat radiation, so that the temperature of the wafer is controlled. At the moment, the gold-plated reflecting layer can reflect heat radiation, the reflected heat radiation can irradiate the wafer for the second time, the heating temperature control efficiency of the wafer is improved, meanwhile, the low-heat-conduction heat insulation layer can reduce the heat radiation in the base to be absorbed by the packaging cover, and the temperature control efficiency in the base is improved.

Description

Technical Field

[0001] This invention relates to the field of oscillator technology, and more specifically to a miniature thermostatic crystal oscillator packaging structure with a recessed base and thermal radiation temperature control. Background Technology

[0002] A cryogenic crystal oscillator (OCXO) is a frequency source device that achieves high frequency stability and low phase noise by heating a crystal resonator to maintain its operation within a preset constant temperature range. It is widely used in communication systems, navigation and positioning, radar equipment, and precision testing and measurement. As electronic devices evolve towards miniaturization, high integration, and low power consumption, higher demands are placed on OCXOs in terms of size, power consumption, and environmental adaptability. Traditional OCXOs typically incorporate heating units and thermal insulation structures within the package to form a cryogenic cavity, reducing the impact of ambient temperature changes on the crystal oscillation frequency. However, with continuously shrinking package sizes, their thermal management efficiency and temperature stability face new challenges.

[0003] Since most OCXOs use heating elements or heating resistors to contact the crystal support for heating, they mainly rely on heat conduction to achieve temperature control. When miniaturized, heat is easily lost to the outside through the package cover, causing local temperature differences, which leads to reduced heating efficiency and increased power consumption. To solve the above problems, we propose a pit-based thermal radiation temperature control micro thermostatic crystal oscillator package structure. Summary of the Invention

[0004] To address the shortcomings of existing technologies, this invention provides a concave base thermal radiation temperature control micro thermostatic crystal oscillator packaging structure, aiming to alleviate the aforementioned problems to at least some extent.

[0005] The above-mentioned technical objective of the present invention is achieved through the following technical solution:

[0006] A recessed base thermal radiation temperature-controlled miniature thermostatic crystal oscillator packaging structure includes:

[0007] The base has an ASIC chip disposed on its bottom surface inside the base, and a heat radiation enhancement layer is disposed above the heating surface of the ASIC chip. The heat radiation enhancement layer is made of metal oxide material.

[0008] The wafer is located inside the base. Adhesive is attached to the four corners of the bottom surface of the wafer. The heat of the ASIC chip is conducted to the wafer by thermal radiation. Several bonding wires are electrically connected to the top surface of the ASIC chip. One end of the bonding wire is electrically connected to the base.

[0009] A heat insulation component is provided on the top surface of the base to block heat radiation inside the base. The heat insulation component reflects the heat radiation emitted by the ASIC chip, thereby improving the heating efficiency of the chip.

[0010] A limiting component located inside the base is used to limit the movement of the wafer.

[0011] Preferably, the heat insulation component includes an encapsulation cover disposed on the top surface of the base, the top surface inside the encapsulation cover is provided with a low thermal conductivity insulation layer, and the bottom surface of the low thermal conductivity insulation layer is provided with a gold-plated reflective layer.

[0012] Preferably, the heat insulation component further includes a fixing frame disposed on the bottom surface of the encapsulation cover, a fixing groove is provided on the top surface of the base, the fixing frame is movably fitted together with the fixing groove, and a sealing gasket is fixedly connected to the bottom surface of the fixing frame.

[0013] Preferably, the limiting component includes several fixing blocks fixed to the bottom surface inside the base, the fixing blocks having a pressing block inside, and a protective pad fixedly connected to one side of the pressing block.

[0014] Preferably, an adjustment hole is provided on one side of the fixing block, and an adjustment rod is threadedly connected inside the adjustment hole. The outer wall surface of the adjustment rod and the inner wall surface of the adjustment hole are both threaded. A rotating groove is provided on one side of the extrusion block, and the adjustment rod is rotatably installed together with the rotating groove. Limiting grooves are provided on both the front and rear sides of the interior of the fixing block, and limiting blocks are fixedly connected to both the front and rear sides of the extrusion block. The limiting blocks are movably sleeved together with the limiting grooves.

[0015] Preferably, a control groove is formed at one end of the adjusting rod, a control rod is provided inside the control groove, a control plate is fixedly connected to one side of the control rod, a positioning frame is fixedly connected to one side of the control plate, a positioning groove is formed on one side of the fixing block, the positioning frame is movably fitted with the positioning groove, a sliding block is fixedly connected to the outer wall of the control rod, a sliding groove is formed on the inner wall of the control groove, and the sliding block is movably fitted with the sliding groove.

[0016] Preferably, a mounting box is disposed inside one side of the base, and a temperature sensor is fixedly connected inside the mounting box, the temperature sensor being electrically connected to the base.

[0017] Preferably, the bottom surface of the base is fixedly connected with a plurality of surface mount pads.

[0018] In summary, the present invention has the following main beneficial effects:

[0019] By incorporating an ASIC chip, when the ASIC chip is working, the heat emitted from its heating surface can be irradiated onto the chip through the thermal radiation enhancement layer, thereby heating the chip and controlling its temperature. At the same time, when the thermal radiation enhancement layer emits thermal radiation, the gold-plated reflective layer can reflect the thermal radiation, allowing the reflected thermal radiation to irradiate the chip a second time, thus improving the chip's heating and temperature control efficiency. Additionally, by incorporating a low thermal conductivity insulation layer, the absorption of thermal radiation within the substrate by the encapsulation cover can be reduced, thereby improving the temperature control efficiency within the substrate.

[0020] By setting up extrusion blocks, when the extrusion blocks are adjusted to their positions inside the fixed blocks, several extrusion blocks can work together to limit the wafer placed in the base, thereby ensuring the stability of the wafer. At the same time, the buffering effect of the protective pad can reduce the impact of packaging stress on the oscillation frequency. By setting up a temperature sensor, the temperature near the wafer can be detected in real time, and the temperature distribution and gradient changes in the base packaging cavity can be perceived in real time. This improves the accuracy of the actual temperature perception of the wafer, thereby enhancing the response speed and fault tolerance of temperature control.

[0021] By setting a control plate, after the positioning frame moves out of the positioning groove, the control plate is rotated. At this time, the rotating control plate can drive the adjusting rod to rotate through the sliding block, so that the adjusting rod can move inside the adjusting hole. The moving adjusting rod can drive the extrusion block to move, thereby adjusting the position of the extrusion block inside the fixed block. At the same time, inside the adjusting control plate, the positioning frame and the positioning groove are movably fitted together, thereby preventing the adjusting rod from rotating randomly inside the adjusting hole during the oscillation process. Attached Figure Description

[0022] Figure 1 This is a three-dimensional structural schematic diagram of the present invention;

[0023] Figure 2 This is a schematic diagram of the fixing block structure of the present invention;

[0024] Figure 3 This is a schematic diagram of the encapsulation cover structure of the present invention;

[0025] Figure 4 This is a schematic diagram of the binding line structure of the present invention;

[0026] Figure 5 This is a schematic diagram of the extrusion block structure of the present invention;

[0027] Figure 6 This is a schematic diagram of the adjusting rod structure of the present invention;

[0028] Figure 7 This is a schematic diagram of the mounting box structure of the present invention.

[0029] Reference numerals: 100, base; 101, ASIC chip; 102, thermal radiation enhancement layer; 103, wafer; 104, adhesive; 105, bonding line;

[0030] 200. Encapsulation cover; 201. Low thermal conductivity insulation layer; 202. Gold-plated reflective layer; 203. Fixing frame; 204. Fixing groove; 205. Sealing gasket;

[0031] 300. Fixing block; 301. Extrusion block; 302. Protective pad;

[0032] 400. Adjustment hole; 401. Adjustment rod; 402. Rotation groove; 403. Limiting groove; 404. Limiting block;

[0033] 500, Control slot; 501, Control rod; 502, Control board; 503, Positioning frame; 504, Positioning slot; 505, Sliding block; 506, Sliding slot;

[0034] 600. Mounting box; 601. Temperature sensor;

[0035] 700, Surface mount pads. Detailed Implementation

[0036] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0037] refer to Figure 1 - Figure 7 A miniature thermostatic crystal oscillator packaging structure with a recessed base for thermal radiation temperature control includes a base 100, an ASIC chip 101, a heat insulation component, and a limiting component.

[0038] The base 100 is an existing structure and will not be described in detail here. An ASIC chip 101 is set on the bottom surface inside the base 100. A heat radiation enhancement layer 102 is set above the heating surface of the ASIC chip 101. The heat radiation enhancement layer 102 is made of metal oxide layer material to improve the heat radiation efficiency of the ASIC chip 101.

[0039] The base 100 contains a chip 103. Adhesive 104 is attached to the four corners of the bottom surface of the chip 103 to bond the chip 103 to the inside of the base 100, so that the chip 103 is above the ASIC chip 101. The heat of the ASIC chip 101 is conducted to the chip 103 by thermal radiation to heat and control the temperature of the chip 103.

[0040] The top surface of the ASIC chip 101 is electrically connected to several bonding wires 105. One end of the bonding wire 105 is electrically connected to the base 100, so as to send the current of the base 100 to the ASIC chip 101.

[0041] The heat insulation component located on the top surface of the base 100 is used to block the heat radiation inside the base 100. The heat insulation component can reflect the heat radiation emitted by the ASIC chip 101, thereby improving the heating efficiency of the chip 103.

[0042] A limiting component located inside the base 100 is used to limit the wafer 103 so that the wafer 103 is located at the center of the heating surface of the ASIC chip 101 during bonding.

[0043] The heat insulation component includes a package cover 200 disposed on the top surface of the base 100. The top surface inside the package cover 200 is provided with a low thermal conductivity insulation layer 201. The low thermal conductivity insulation layer 201 can reduce the absorption of thermal radiation inside the base 100 by the package cover 200, thereby improving the effective radiation energy that the chip can subsequently obtain.

[0044] The gold-plated reflective layer 202 located on the bottom surface of the low thermal conductivity insulation layer 201 can concentrate the heat energy in the wafer 103 region after the heat radiation emitted by the ASIC chip 101 is reflected multiple times in the cavity of the base 100. This reduces the proportion of heat radiation escaping to the outside and effectively improves the heating efficiency per unit power consumption.

[0045] By setting up the ASIC chip 101, when the ASIC chip 101 is working, the heat emitted by the heating surface of the ASIC chip 101 can be irradiated onto the wafer 103 through the thermal radiation enhancement layer 102, thereby heating the wafer 103 and controlling its temperature. At the same time, when the thermal radiation enhancement layer 102 emits thermal radiation, the gold-plated reflective layer 202 can reflect the thermal radiation, so that the reflected thermal radiation can irradiate the wafer 103 again, thereby improving the heating and temperature control efficiency of the wafer 103. In addition, by setting up the low thermal conductivity insulation layer 201, the low thermal conductivity insulation layer 201 can reduce the absorption of thermal radiation in the base 100 by the encapsulation cover 200, thereby improving the temperature control efficiency in the base 100.

[0046] As a further embodiment of the present invention, the heat insulation component also includes a fixing frame 203 disposed on the bottom surface of the encapsulation cover 200, and a fixing groove 204 is provided on the top surface of the base 100. The fixing frame 203 and the fixing groove 204 are movably fitted together. When the operator places the encapsulation cover 200 on the top surface of the base 100, the fixing frame 203 can be movably fitted together with the fixing groove 204 to position the encapsulation cover 200, thereby facilitating the subsequent fixing of the encapsulation cover 200 above the base 100. A sealing gasket 205 is fixedly connected to the bottom surface of the fixing frame 203. When the encapsulation cover 200 and the base 100 are sealed, the sealing gasket 205 can seal the encapsulation cover 200 and the base 100 to prevent heat radiation inside the base 100 from flowing out through the gap between the encapsulation cover 200 and the base 100.

[0047] The limiting component includes several fixing blocks 300 fixed to the bottom surface inside the base 100. The fixing blocks 300 have a pressing block 301 inside. By adjusting the position of the pressing block 301 inside the fixing block 300, the pressing block 301 can limit the wafer 103, thereby ensuring that the wafer 103 is in the center of the base 100 before bonding. The heat radiation energy of the ASIC chip 101 is sent to the wafer 103. A protective pad 302 is fixedly connected to one side of the pressing block 301. The protective pad 302 can protect the wafer 103 and the pressing block 301, and prevent accidental damage after the pressing block 301 comes into contact with the wafer 103.

[0048] By setting the extrusion block 301, when the position of the extrusion block 301 inside the fixed block 300 is adjusted, several extrusion blocks 301 can work together to limit the position of the chip 103 placed in the base 100, thereby ensuring the stability of the chip 103. At the same time, the buffering effect of the protective pad 302 can reduce the impact of packaging stress on the oscillation frequency.

[0049] As a further embodiment of the present invention, an adjustment hole 400 is provided on one side of the fixed block 300, and an adjustment rod 401 is threadedly connected inside the adjustment hole 400. The outer wall surface of the adjustment rod 401 and the inner wall surface of the adjustment hole 400 are both threaded. A rotating groove 402 is provided on one side of the extrusion block 301. The adjustment rod 401 and the rotating groove 402 are rotatably installed together. When the adjustment rod 401 rotates inside the adjustment hole 400, the adjustment rod 401 can drive the extrusion block 301 to move, so as to adjust the position of the extrusion block 301 inside the fixed block 300, which facilitates the subsequent positioning of wafers 103 of different sizes. Limiting grooves 403 are provided on both the front and rear sides inside the fixed block 300. Limiting blocks 404 are fixedly connected to both the front and rear sides of the extrusion block 301. The limiting blocks 404 and the limiting grooves 403 are movably sleeved together. The limiting blocks 404 can limit the extrusion block 301, thereby preventing the extrusion block 301 from moving out of the interior of the fixed block 300.

[0050] A control groove 500 is provided at one end of the adjusting rod 401. A control rod 501 is provided inside the control groove 500. A control plate 502 is fixedly connected to one side of the control rod 501. When the control plate 502 rotates, it can drive the control rod 501 to rotate. A positioning frame 503 is fixedly connected to one side of the control plate 502. A positioning groove 504 is provided on one side of the fixing block 300. The positioning frame 503 and the positioning groove 504 are movably fitted together. By using the positioning frame 503 and the positioning groove 504 together, the control plate 502 can be positioned, thereby preventing the control plate 502 from rotating arbitrarily. A sliding block 505 is fixedly connected to the outer wall of the control rod 501. A sliding groove 506 is provided on the inner wall of the control groove 500. The sliding block 505 and the sliding groove 506 are movably fitted together. When the control plate 502 drives the control rod 501 to rotate, the control rod 501 can drive the adjusting rod 401 to rotate through several sliding blocks 505.

[0051] By setting the control plate 502, after the positioning frame 503 moves out of the positioning groove 504, the control plate 502 is rotated. At this time, the control plate 502 can drive the adjusting rod 401 to rotate through the sliding block 505, so that the adjusting rod 401 can move inside the adjusting hole 400. When the adjusting rod 401 moves, it can drive the pressing block 301 to move, thereby adjusting the position of the pressing block 301 inside the fixed block 300. At the same time, inside the adjusting control plate 502, the positioning frame 503 and the positioning groove 504 are movably fitted together, thereby preventing the adjusting rod 401 from rotating randomly inside the adjusting hole 400 during the oscillation process.

[0052] As a further embodiment of the present invention, a mounting box 600 is provided on one side inside the base 100, and a temperature sensor 601 is fixedly connected inside the mounting box 600. The temperature sensor 601 is electrically connected to the base 100.

[0053] By setting a temperature sensor 601, the temperature sensor 601 can detect the temperature near the wafer 103 in real time, and sense the temperature distribution and gradient changes in the packaging cavity of the base 100 in real time. This improves the accuracy of the actual temperature sensing of the wafer 103, thereby enhancing the response speed and fault tolerance of temperature control.

[0054] As a further embodiment of the present invention, a plurality of surface mount pads 700 are fixedly connected to the bottom surface of the base 100.

[0055] By setting the surface mount pads 700, the base 100 can be fixed in place after the worker places it in the appropriate position.

[0056] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A packaging structure for a pit-based thermal radiation temperature-controlled miniature isothermal crystal oscillator, characterized in that, include: The base (100) has an ASIC chip (101) disposed on the bottom surface inside the base (100). A heat radiation enhancement layer (102) is disposed above the heating surface of the ASIC chip (101). The heat radiation enhancement layer (102) is made of metal oxide layer material. The wafer (103) is located inside the base (100). Adhesive (104) is attached to the four corners of the bottom surface of the wafer (103). The heat of the ASIC chip (101) is conducted to the wafer (103) by thermal radiation. Several bonding wires (105) are electrically connected to the top surface of the ASIC chip (101). One end of the bonding wire (105) is electrically connected to the base (100). A heat insulation component is provided on the top surface of the base (100) to block the heat radiation inside the base (100). The heat insulation component reflects the heat radiation emitted by the ASIC chip (101) to increase the heating efficiency of the wafer (103). A limiting component located inside the base (100) is used to limit the wafer (103).

2. The packaging structure of a pit-based thermal radiation temperature-controlled micro thermostatic crystal oscillator according to claim 1, characterized in that, The heat insulation component includes an encapsulation cover (200) disposed on the top surface of the base (100), the top surface inside the encapsulation cover (200) is provided with a low thermal conductivity insulation layer (201), and the bottom surface of the low thermal conductivity insulation layer (201) is provided with a gold-plated reflective layer (202).

3. The packaging structure for a recessed base thermal radiation temperature-controlled micro thermostatic crystal oscillator according to claim 2, characterized in that, The heat insulation component also includes a fixing frame (203) disposed on the bottom surface of the encapsulation cover (200), and a fixing groove (204) is provided on the top surface of the base (100). The fixing frame (203) and the fixing groove (204) are movably fitted together, and a sealing gasket (205) is fixedly connected to the bottom surface of the fixing frame (203).

4. The packaging structure of a pit-based thermal radiation temperature-controlled micro thermostatic crystal oscillator according to claim 1, characterized in that, The limiting component includes several fixing blocks (300) fixed to the bottom surface inside the base (100). The fixing blocks (300) have a pressing block (301) inside, and a protective pad (302) is fixedly connected to one side of the pressing block (301).

5. The packaging structure of a pit-based thermal radiation temperature-controlled micro thermostatic crystal oscillator according to claim 4, characterized in that, An adjustment hole (400) is provided on one side of the fixed block (300). An adjustment rod (401) is threadedly connected inside the adjustment hole (400). The outer wall surface of the adjustment rod (401) and the inner wall surface of the adjustment hole (400) are both threaded. A rotating groove (402) is provided on one side of the extrusion block (301). The adjustment rod (401) and the rotating groove (402) are rotatably installed together. Limiting grooves (403) are provided on both the front and rear sides inside the fixed block (300). Limiting blocks (404) are fixedly connected to both the front and rear sides of the extrusion block (301). The limiting blocks (404) and the limiting grooves (403) are movably sleeved together.

6. The packaging structure of a pit-based thermal radiation temperature-controlled micro thermostatic crystal oscillator according to claim 5, characterized in that, A control groove (500) is provided at one end of the adjusting rod (401). A control rod (501) is provided inside the control groove (500). A control plate (502) is fixedly connected to one side of the control rod (501). A positioning frame (503) is fixedly connected to one side of the control plate (502). A positioning groove (504) is provided on one side of the fixing block (300). The positioning frame (503) and the positioning groove (504) are movably fitted together. A sliding block (505) is fixedly connected to the outer wall of the control rod (501). A sliding groove (506) is provided on the inner wall of the control groove (500). The sliding block (505) and the sliding groove (506) are movably fitted together.

7. The packaging structure for a pit-based thermal radiation temperature-controlled micro thermostatic crystal oscillator according to claim 1, characterized in that, A mounting box (600) is provided on one side inside the base (100), and a temperature sensor (601) is fixedly connected inside the mounting box (600). The temperature sensor (601) is electrically connected to the base (100).

8. The packaging structure of a pit-based thermal radiation temperature-controlled micro thermostatic crystal oscillator according to claim 1, characterized in that, The base (100) has several surface mount pads (700) fixedly connected to its bottom surface.

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